Semiconductor device and semiconductor storage device
JP2025134312APending Publication Date: 2025-09-17KIOXIA CORP
Patent Information
- Application Number
- JP2024032142
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-03-04
- Publication Date
- 2025-09-17
AI Technical Summary
Technical Problem
Existing semiconductor devices face challenges in controlling the threshold voltages of n-channel and p-channel MOSFETs to desired values due to variations in work function and atomic migration during manufacturing.
Method used
The semiconductor device incorporates specific gate electrode structures for n-channel and p-channel MOSFETs, including regions of titanium nitride, tantalum nitride, hafnium nitride, and titanium-aluminum alloy, which stabilize the threshold voltages by controlling atomic migration and work function changes.
Benefits of technology
The solution effectively controls the threshold voltages of both n-channel and p-channel MOSFETs to desired levels, enhancing the stability and performance of the semiconductor device.
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Figure 2025134312000001_ABST
Abstract
To provide a semiconductor device that controls the threshold voltage of an n-channel MOSFET and the threshold voltage of a p-channel MOSFET to desired threshold voltages respectively.SOLUTION: A semiconductor device comprises: an n-channel MOSFET which includes a first gate insulation film and a first gate electrode, which includes a first region including Ti and Al and a second region provided between the first gate insulation film and the first region, contacting the first gate insulation film, and including a first metal element and nitrogen (N); and a p-channel MOSFET which includes a second gate insulation film and a second gate electrode, which includes a third region including Ti and Al, a fourth region provided between the second gate insulation film and the third region, contacting the second gate insulation film, and including the first metal element and nitrogen (N), and a fifth region provided between the third region and fourth region and including Hf or Zr as a second metal element, and nitrogen (N).SELECTED DRAWING: Figure 1
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Citation Information
Patent Citations
CMOS semiconductor device equipped with double work function metallic gate stack
JP2007208260A