Semiconductor device
JP2025137072APending Publication Date: 2025-09-19KK TOSHIBA +1
Patent Information
- Application Number
- JP2024036065
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-03-08
- Publication Date
- 2025-09-19
Smart Images
Figure 2025137072000001_ABST
Abstract
To provide a semiconductor device capable of improving a yield.SOLUTION: A semiconductor device according to an embodiment includes: first and second terminals; a first transistor; and first and second circuits. One end of the first transistor is connected to the first terminal, the other end is connected to the second terminal, and a gate is connected to a first node. The first circuit includes a second transistor. The one end of the second transistor is connected to the first terminal, and the gate is connected to a second node. The second circuit includes first and second resistive elements and a first switch element. The one end of the first resistive element is connected to the second node, and the other end is connected to the first node. The one end of the second resistive element is connected to a third node, and the other end is connected to the first node. The first switch element switches between connection and disconnection between the second and third nodes. The second circuit adjusts a voltage difference between a gate voltage of the second transistor and a gate voltage of the first transistor by performing switching.SELECTED DRAWING: Figure 1
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Citation Information
Patent Citations
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