Light-emitting device and display device

Abstract

To provide a light-emitting device with excellent characteristics.SOLUTION: A light-emitting device includes first and second electrodes, an intermediate layer existing between the electrodes, first and second light-emitting layers, and first and second electron transport layers. The first light-emitting layer exists between the first electrode and the intermediate layer. The second light-emitting layer exists between the intermediate layer and the second electrode. The first electron transport layer exists between the first light-emitting layer and the intermediate layer. The second electron transport layer exists between the second light-emitting layer and the second electrode. The second electron transport layer includes a first organic compound containing a triazine skeleton. The intermediate layer includes a second organic compound containing a phenanthroline skeleton. The first light-emitting layer and the second light-emitting layer contain the same light-emitting center material and two kinds of organic compounds that form an excited complex. The first light-emitting layer and the second light-emitting layer are different from the light-emitting layer included in at least one of a plurality of other light-emitting devices adjacent to the aforementioned light-emitting device.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to an organic compound, an organic semiconductor element, a light-emitting device, a photodiode sensor, a display module, a lighting module, a display device, an electronic device, a lighting device, and an electronic device. Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification etc. relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include semiconductor devices, display devices, liquid crystal display devices, lighting devices, power storage devices, memory devices, imaging devices, driving methods thereof, and manufacturing methods thereof. [Background technology]

[0002] Light-emitting devices (also called organic EL elements) that utilize electroluminescence (EL) using organic compounds are becoming more and more common. The basic structure of these light-emitting devices is a pair of electrodes sandwiching an organic compound layer containing a luminescent center substance between them. By applying a voltage to this device, carriers are injected, and the recombination energy of these carriers is utilized to emit light from the luminescent center substance.

[0003] Since light-emitting devices are self-luminous, display devices using these light-emitting devices as pixels have higher visibility than liquid crystal display devices and do not require backlighting. Another major advantage of display devices using such light-emitting devices is that they can be fabricated to be thin and lightweight. Another feature is their extremely fast response speed.

[0004] Furthermore, these light-emitting devices can emit light in a planar, continuous pattern because the light-emitting layer can be formed continuously in a planar pattern. This is a feature that is difficult to obtain with point light sources such as incandescent bulbs and LEDs, or linear light sources such as fluorescent lamps, making them highly useful as surface light sources for lighting applications.

[0005] Display devices and lighting devices using such light-emitting devices are suitable for a variety of electronic devices, but research and development is ongoing to find light-emitting devices with even better characteristics.

[0006] Tandem light-emitting devices in particular have attracted attention because they achieve high current efficiency.

[0007] Patent Documents 1 and 2 disclose tandem light-emitting devices using a separate coating method. [Prior art documents] [Patent documents]

[0008] [Patent Document 1] Japanese Patent Application Laid-Open No. 2005-317548 [Patent Document 2] Japanese Patent Publication No. 2023-161850 Summary of the Invention [Problem to be solved by the invention]

[0009] An object of one embodiment of the present invention is to provide a light-emitting device with good characteristics.An object of one embodiment of the present invention is to provide a light-emitting device with good emission efficiency.An object of one embodiment of the present invention is to provide a light-emitting device with good reliability.An object of one embodiment of the present invention is to provide a light-emitting device with low driving voltage.An object of one embodiment of the present invention is to provide a light-emitting device with good reliability and low driving voltage.

[0010] Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a display device with good characteristics. Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a display device with good emission efficiency. Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a display device with good reliability. Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a display device with low driving voltage. Another object of one embodiment of the present invention is to provide a light-emitting device that can provide a display device with low driving voltage and good reliability.

[0011] Another object is to provide any one of an organic semiconductor device, a light-emitting device, a light-receiving device, a display device, an electronic device, and a lighting device that consumes low power, or to provide any one of an electronic device and a lighting device that is highly reliable, or to provide any one of a novel organic semiconductor device, a light-emitting device, a light-receiving device, a display device, an electronic device, and a lighting device.

[0012] The present invention is intended to solve any one of the above-mentioned problems. Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description in the specification, drawings, claims, etc., and it is possible to extract other problems from the description in the specification, drawings, claims, etc. [Means for solving the problem]

[0013] One embodiment of the present invention is a light-emitting device having a first electrode, a second electrode, an intermediate layer, a first light-emitting layer, a second light-emitting layer, a first electron-transporting layer, and a second electron-transporting layer, wherein the intermediate layer is located between the first electrode and the second electrode, the first light-emitting layer is located between the first electrode and the intermediate layer, the second light-emitting layer is located between the intermediate layer and the second electrode, the first electron-transporting layer is located between the first light-emitting layer and the intermediate layer, and the second electron-transporting layer is located between the second light-emitting layer and the second electrode, the first light-emitting layer has a first light-emitting center substance, a third organic compound, and a fourth organic compound, and the second light-emitting layer has a second light-emitting center substance, a third organic compound, and a fourth organic compound. a first organic compound, a fifth organic compound, and a sixth organic compound, wherein the third organic compound and the fourth organic compound are a combination that form a first exciplex, and the fifth organic compound and the sixth organic compound are a combination that form a second exciplex, wherein the difference between the maximum peak wavelength in the emission spectrum of the first luminescent center substance and the maximum peak wavelength in the emission spectrum of the second luminescent center substance is 30 nm or less, and the first and second luminescent layers are luminescent layers that emit light of a different hue from that of a luminescent layer of at least one of a plurality of other luminescent devices adjacent to the light-emitting device.

[0014] Another embodiment of the present invention is a light-emitting device having a first electrode, a second electrode, an intermediate layer, a first light-emitting layer, a second light-emitting layer, a first electron-transporting layer, and a second electron-transporting layer, wherein the intermediate layer is located between the first electrode and the second electrode, the first light-emitting layer is located between the first electrode and the intermediate layer, the second light-emitting layer is located between the intermediate layer and the second electrode, the first electron-transporting layer is located between the first light-emitting layer and the intermediate layer, and the second electron-transporting layer is located between the second light-emitting layer and the second electrode, the second electron-transporting layer has a first organic compound having a triazine skeleton, and the intermediate layer has a mixed layer of a second organic compound having a phenanthroline skeleton and lithium or a lithium compound, and the first light-emitting layer is a first emitting layer. the second light-emitting layer has a second light-emitting center substance, a third organic compound, and a fourth organic compound, the third organic compound and the fourth organic compound being a combination that forms a first exciplex, and the fifth organic compound and the sixth organic compound being a combination that forms a second exciplex, the difference between the maximum peak wavelength in the emission spectrum of the first light-emitting center substance and the maximum peak wavelength in the emission spectrum of the second light-emitting center substance being 30 nm or less, and the first light-emitting layer and the second light-emitting layer being light-emitting layers that emit light of a different hue from the light-emitting layer of at least one light-emitting device among a plurality of other light-emitting devices adjacent to the light-emitting device.

[0015] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first electron-transport layer includes a seventh organic compound having a triazine skeleton.

[0016] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first organic compound and the seventh organic compound are the same organic compound.

[0017] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the intermediate layer contains lithium or a lithium compound.

[0018] Another embodiment of the present invention is a light-emitting device having the above structure, in which the intermediate layer includes a mixed layer of the second organic compound and lithium or a lithium compound.

[0019] Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission edge on the short wavelength side of the first exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the first luminescence center substance.

[0020] Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission edge on the short wavelength side of the second exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the second luminescence center substance.

[0021] Another embodiment of the present invention is a light-emitting device having the above structure, in which the emission edge on the short wavelength side of the first exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the first luminescence center substance, and the emission edge on the short wavelength side of the second exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the second luminescence center substance.

[0022] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the peak wavelength of the emission spectrum of the first exciplex is shorter than the peak wavelength of the emission spectrum of the first luminescence center substance, and the difference between the peak wavelength of the emission spectrum of the first exciplex and the peak wavelength of the emission spectrum of the first luminescence center substance is 30 nm or less.

[0023] Another embodiment of the present invention is a light-emitting device having the above structure, in which the peak wavelength of the emission spectrum of the second exciplex is shorter than the peak wavelength of the emission spectrum of the second luminescence center substance, and the difference between the peak wavelength of the emission spectrum of the second exciplex and the peak wavelength of the emission spectrum of the second luminescence center substance is 30 nm or less.

[0024] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the peak wavelength of the emission spectrum of the first exciplex is shorter than the peak wavelength of the emission spectrum of the first luminescence-center substance, and the difference between the peak wavelengths of the emission spectrum of the first exciplex and the first luminescence-center substance is 30 nm or less; and the peak wavelength of the emission spectrum of the second exciplex is shorter than the peak wavelength of the emission spectrum of the second luminescence-center substance, and the difference between the peak wavelengths of the emission spectrum of the second exciplex and the second luminescence-center substance is 30 nm or less.

[0025] Another embodiment of the present invention is a light-emitting device having the above structure, in which the energy difference between the HOMO level and the LUMO level of the first luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the first exciplex.

[0026] Another embodiment of the present invention is a light-emitting device having the above structure, in which the energy difference between the HOMO level and the LUMO level of the second luminescent center substance is larger than the energy difference between the HOMO level and the LUMO level of the second exciplex.

[0027] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the energy difference between the HOMO level and the LUMO level of the first luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the first exciplex, and the energy difference between the HOMO level and the LUMO level of the second luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the second exciplex.

[0028] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second electron-transport layer contains lithium or a lithium compound.

[0029] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first luminescent center substance and the second luminescent center substance are the same substance.

[0030] Another embodiment of the present invention is a light-emitting device having the above structure, in which the intermediate layer includes a first layer containing a second organic compound.

[0031] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first layer contains lithium or a lithium compound.

[0032] Another embodiment of the present invention is a light-emitting device having the above structure, in which the intermediate layer further includes a second layer, and the second layer is located between the first layer and the second light-emitting layer.

[0033] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second layer contains a ninth organic compound having a hole-transporting property.

[0034] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second layer contains an organic compound having at least one of a halogen group and a cyano group.

[0035] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second layer contains an organic compound having at least one of fluorine and a cyano group.

[0036] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second layer includes an organic compound having four or more of at least one of a halogen group and a cyano group.

[0037] Another embodiment of the present invention is a light-emitting device having the above structure, in which the second layer contains four or more organic compounds each containing at least one of fluorine and cyano groups.

[0038] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first electron-transport layer includes a seventh organic compound having a triazine skeleton.

[0039] Another embodiment of the present invention is a light-emitting device having the above structure, in which the first organic compound and the seventh organic compound are the same organic compound.

[0040] Another embodiment of the present invention is a light-emitting device having any of the above structures, in which the first electron-transport layer includes an eighth organic compound that does not contain a triazine skeleton.

[0041] Another embodiment of the present invention is a light-emitting device having the above structure, wherein the first electron-transport layer includes an eighth organic compound including at least one of a pyrimidine skeleton, an imidazole skeleton, and an anthracene skeleton.

[0042] Another embodiment of the present invention is a display device including any of the above light-emitting devices.

[0043] Another embodiment of the present invention is a display device including a light-emitting device A and a light-emitting device B, the light-emitting device A being adjacent to the light-emitting device B. The light-emitting device A includes a first electrode A, a second electrode A, an intermediate layer A, a first light-emitting layer A, a second light-emitting layer A, a first electron-transporting layer A, and a second electron-transporting layer A. The intermediate layer A is located between the first electrode A and the second electrode A. The first light-emitting layer A is located between the first electrode A and the intermediate layer A. The second light-emitting layer A is located between the intermediate layer A and the second electrode A. The first electron-transporting layer A is located between the first light-emitting layer A and the intermediate layer A. and a second electron transport layer A is located between the second light-emitting layer A and the second electrode A. Light-emitting device B has a first electrode B, a second electrode B, an intermediate layer B, a first light-emitting layer B, a second light-emitting layer B, a first electron transport layer B, and a second electron transport layer B, wherein the intermediate layer B is located between the first electrode B and the second electrode B, the first light-emitting layer B is located between the first electrode B and the intermediate layer B, and the second light-emitting layer B is located between the intermediate layer B and the second electrode B, the first electron transport layer B is located between the first light-emitting layer B and the intermediate layer B, and the second electron transport layer B is located between the second light-emitting layer B and the The second electron transport layer A and the second electron transport layer B are located between the first electrode B and the second electrode B, and the second electron transport layer A and the second electron transport layer B contain a first organic compound having a triazine skeleton, and the second electron transport layer A and the second electron transport layer B are made of the same material, the intermediate layer A and the intermediate layer B contain a second organic compound having a phenanthroline skeleton, and lithium or a lithium compound, the first light-emitting layer A contains a first light-emitting center substance, a third organic compound, and a fourth organic compound, the second light-emitting layer A contains a second light-emitting center substance, a fifth organic compound, and a sixth organic compound, and the third organic compound and the fourth organic compound are a combination of the fifth organic compound and the sixth organic compound forming a first exciplex, a combination of the fifth organic compound and the sixth organic compound forming a second exciplex, the first light-emitting layer B having a third luminescence center substance, the second light-emitting layer B having a fourth luminescence center substance, a difference between a maximum peak wavelength in the emission spectrum of the first luminescence center substance and a maximum peak wavelength in the emission spectrum of the second luminescence center substance being 30 nm or less, a difference between a maximum peak wavelength in the emission spectrum of the third luminescence center substance and a maximum peak wavelength in the emission spectrum of the fourth luminescence center substance being 30 nm or less,In this display device, the first light-emitting layer A and the first light-emitting layer B, and the second light-emitting layer A and the second light-emitting layer B are light-emitting layers that emit light of different hues.

[0044] Another embodiment of the present invention is a display device including a light-emitting device A and a light-emitting device B, the light-emitting device A being adjacent to the light-emitting device B. The light-emitting device A includes a first electrode A, a second electrode A, an intermediate layer A, a first light-emitting layer A, a second light-emitting layer A, a first electron-transport layer A, and a second electron-transport layer A. The intermediate layer A is located between the first electrode A and the second electrode A. The first light-emitting layer A is located between the first electrode A and the intermediate layer A. The second light-emitting layer A is located between the intermediate layer A and the second electrode A. The first electron-transport layer A is located between the first light-emitting layer A and the intermediate layer A. a second electron transport layer A is located between the second light-emitting layer A and the second electrode A; a light-emitting device B has a first electrode B, a second electrode B, an intermediate layer B, a first light-emitting layer B, a second light-emitting layer B, a first electron transport layer B, and a second electron transport layer B, the intermediate layer B being located between the first electrode B and the second electrode B; the first light-emitting layer B being located between the first electrode B and the intermediate layer B; the second light-emitting layer B being located between the intermediate layer B and the second electrode B; the first electron transport layer B being located between the first light-emitting layer B and the intermediate layer B; and the second electron transport layer B being located between the second light-emitting layer B and the second electrode B. the second electron transport layer A and the second electron transport layer B comprise a first organic compound having a triazine skeleton, the second electron transport layer A and the second electron transport layer B are continuous layers, the intermediate layer A and the intermediate layer B comprise a second organic compound having a phenanthroline skeleton, and lithium or a lithium compound, the first light-emitting layer A comprises a first light-emitting center substance, a third organic compound, and a fourth organic compound, the second light-emitting layer A comprises a second light-emitting center substance, a fifth organic compound, and a sixth organic compound, and the third organic compound and the fourth organic compound are a combination that forms a first exciplex, the fifth organic compound and the sixth organic compound are a combination that forms a second exciplex, the first emitting layer B has a third luminescence center substance, the second emitting layer B has a fourth luminescence center substance, the difference between the maximum peak wavelength in the emission spectrum of the first luminescence center substance and the maximum peak wavelength in the emission spectrum of the second luminescence center substance is 30 nm or less, and the difference between the maximum peak wavelength in the emission spectrum of the third luminescence center substance and the maximum peak wavelength in the emission spectrum of the fourth luminescence center substance is 30 nm or less,In this display device, the first light-emitting layer A and the first light-emitting layer B, and the second light-emitting layer A and the second light-emitting layer B are different light-emitting layers.

[0045] Another embodiment of the present invention is a display device having the above structure, in which the emission edge on the short wavelength side of the first exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the first luminescence center substance.

[0046] Another embodiment of the present invention is a display device having the above structure, in which the emission edge on the short wavelength side of the second exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the second luminescence center substance.

[0047] Another embodiment of the present invention is a display device having the above structure, in which the emission edge on the short wavelength side of the first exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the first luminescence center substance, and the emission edge on the short wavelength side of the second exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the second luminescence center substance.

[0048] Another embodiment of the present invention is a display device having the above structure, in which the peak wavelength of the emission spectrum of the first exciplex is shorter than the peak wavelength of the emission spectrum of the first luminescence center substance, and the difference between the peak wavelength of the emission spectrum of the first exciplex and the peak wavelength of the emission spectrum of the first luminescence center substance is 30 nm or less.

[0049] Another embodiment of the present invention is a display device having the above structure, in which the peak wavelength of the emission spectrum of the second exciplex is shorter than the peak wavelength of the emission spectrum of the second luminescence center substance, and the difference between the peak wavelength of the emission spectrum of the second exciplex and the peak wavelength of the emission spectrum of the second luminescence center substance is 30 nm or less.

[0050] Another embodiment of the present invention is a display device having the above structure, in which the peak wavelength of the emission spectrum of the first exciplex is shorter than that of the first luminescence-center substance and the difference between the peak wavelengths of the emission spectrum of the first exciplex and the first luminescence-center substance is 30 nm or less; and the peak wavelength of the emission spectrum of the second exciplex is shorter than that of the second luminescence-center substance and the difference between the peak wavelengths of the emission spectrum of the second exciplex and the second luminescence-center substance is 30 nm or less.

[0051] Another embodiment of the present invention is a display device having the above structure, in which the energy difference between the HOMO level and the LUMO level of the first luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the first exciplex.

[0052] Another embodiment of the present invention is a display device having the above structure, in which the energy difference between the HOMO level and the LUMO level of the second luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the second exciplex.

[0053] Another embodiment of the present invention is a display device having the above structure, in which the energy difference between the HOMO level and the LUMO level of the first luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the first exciplex, and the energy difference between the HOMO level and the LUMO level of the second luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the second exciplex.

[0054] Another embodiment of the present invention is an electronic device including any of the above light-emitting devices and a sensor, an operation button, a speaker, or a microphone.

[0055] Another embodiment of the present invention is a lighting device including the above-described light-emitting device and a housing.

[0056] The above is one embodiment of the present invention, and the present invention is not limited to the above configuration. [Effects of the Invention]

[0057] According to one embodiment of the present invention, a light-emitting device with favorable characteristics can be provided. Alternatively, according to one embodiment of the present invention, a light-emitting device with favorable emission efficiency can be provided. Alternatively, according to one embodiment of the present invention, a light-emitting device with favorable reliability can be provided. Alternatively, according to one embodiment of the present invention, a light-emitting device with low driving voltage can be provided. Alternatively, according to one embodiment of the present invention, a light-emitting device with favorable reliability and low driving voltage can be provided.

[0058] Alternatively, one embodiment of the present invention can provide a light-emitting device that can provide a display device with good characteristics. Alternatively, one embodiment of the present invention can provide a light-emitting device that can provide a display device with good emission efficiency. Alternatively, one embodiment of the present invention can provide a light-emitting device that can provide a display device with good reliability. Alternatively, one embodiment of the present invention can provide a light-emitting device that can provide a display device with low driving voltage. Alternatively, one embodiment of the present invention can provide a light-emitting device that can provide a display device with low driving voltage and good reliability.

[0059] Alternatively, it is possible to provide any one of an organic semiconductor device, a light-emitting device, a light-receiving device, a display device, an electronic device, and a lighting device with low power consumption, or any one of an electronic device and a lighting device with high reliability. [Brief explanation of the drawings]

[0060] [Figure 1] 1A to 1C are schematic diagrams of a light-emitting device according to one embodiment of the present invention. [Figure 2] 2A and 2B are schematic diagrams of a light-emitting device according to one embodiment of the present invention. [Figure 3] 3A and 3B illustrate a display device according to one embodiment of the present invention. [Figure 4] 4A and 4B illustrate a display device according to one embodiment of the present invention. [Figure 5] 5A to 5E are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 6] 6A and 6B are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 7] 7A to 7D are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 8] 8A to 8C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 9] 9A to 9C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 10] 10A to 10C are cross-sectional views showing an example of a method for manufacturing a display device. [Figure 11] 11(A) and 11(B) are perspective views showing configuration examples of a display module. [Figure 12] 12(A) and 12(B) are cross-sectional views showing examples of the configuration of a display device. [Figure 13] FIG. 13 is a perspective view showing a configuration example of a display device. [Figure 14] FIG. 14 is a cross-sectional view showing an example of the configuration of a display device. [Figure 15] FIG. 15 is a cross-sectional view showing an example of the configuration of a display device. [Figure 16] 16A to 16C are diagrams showing configuration examples of display devices. [Figure 17] FIG. 17 is a cross-sectional view showing an example of the configuration of a display device. [Figure 18] 18A to 18C are diagrams showing configuration examples of display devices. [Figure 19] 19(A) to 19(D) are diagrams illustrating an example of a wearable device. [Figure 20] 20A to 20F are diagrams showing examples of electronic devices. [Figure 21]21A to 21G are diagrams showing examples of electronic devices. [Figure 22] FIG. 22 is a graph showing the luminance-current density characteristics of the light-emitting device R1 and the comparative light-emitting device R1. [Figure 23] FIG. 23 is a graph showing the current efficiency-luminance characteristics of the light-emitting device R1 and the comparative light-emitting device R1. [Figure 24] FIG. 24 is a graph showing the current density-voltage characteristics of the light-emitting device R1 and the comparative light-emitting device R1. [Figure 25] FIG. 25 is a graph showing the power efficiency-luminance characteristics of the light-emitting device R1 and the comparative light-emitting device R1. [Figure 26] FIG. 26 shows the electroluminescence spectra of light-emitting device R1 and comparative light-emitting device R1. [Figure 27] FIG. 27 is a graph showing the luminance-current density characteristics of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 28] FIG. 28 is a graph showing the current efficiency-luminance characteristics of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 29] FIG. 29 is a graph showing the current density-voltage characteristics of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 30] FIG. 30 is a graph showing the power efficiency-luminance characteristics of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 31] FIG. 31 shows electroluminescence spectra of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 32] FIG. 32 is a graph showing the normalized luminance vs. time change characteristics of the light-emitting device G1 and the comparative light-emitting device G1. [Figure 33] FIG. 33 shows PL spectra of 8mpTP-4mDBtPBfpm, βNCCP, and exciplexes of 8mpTP-4mDBtPBfpm and βNCCP. [Figure 34]FIG. 34 shows the PL spectrum of the exciplex of 8mpTP-4mDBtPBfpm and βNCCP, and the absorption spectrum and PL spectrum of Ir(5mppy-d3)2(mbfpypy-d3). [Figure 35] FIG. 35 is a diagram showing an example of determining the emission edge and the absorption edge. [Figure 36] FIG. 36 is a graph showing the luminance-current density characteristics of the light-emitting device B1 and the comparative light-emitting device B1. [Figure 37] FIG. 37 is a graph showing the current efficiency-luminance characteristics of the light-emitting device B1 and the comparative light-emitting device B1. [Figure 38] FIG. 38 is a graph showing the current density-voltage characteristics of the light-emitting device B1 and the comparative light-emitting device B1. [Figure 39] FIG. 39 is a graph showing the power efficiency-luminance characteristics of the light-emitting device B1 and the comparative light-emitting device B1. [Figure 40] FIG. 40 is a graph showing the blue index-luminance characteristics of the light-emitting device B1 and the comparative light-emitting device B1. [Figure 41] FIG. 41 shows electroluminescence spectra of light-emitting device B1 and comparative light-emitting device B1. [Figure 42] FIG. 42 is a graph showing the luminance-current density characteristics of light-emitting device R2 and comparative light-emitting device R2. [Figure 43] FIG. 43 is a graph showing the current efficiency-luminance characteristics of the light-emitting device R2 and the comparative light-emitting device R2. [Figure 44] FIG. 44 is a graph showing the current density-voltage characteristics of light-emitting device R2 and comparative light-emitting device R2. [Figure 45] FIG. 45 is a graph showing the power efficiency-luminance characteristics of the light-emitting device R2 and the comparative light-emitting device R2. [Figure 46] FIG. 46 shows the electroluminescence spectra of light-emitting device R2 and comparative light-emitting device R2. [Figure 47] FIG. 47 is a graph showing the luminance-current density characteristics of the light-emitting device G2 and the comparative light-emitting device G2. [Figure 48] FIG. 48 is a graph showing the current efficiency-luminance characteristics of the light-emitting device G2 and the comparative light-emitting device G2. [Figure 49] FIG. 49 is a graph showing the current density-voltage characteristics of the light-emitting device G2 and the comparative light-emitting device G2. [Figure 50] FIG. 50 is a graph showing the power efficiency-luminance characteristics of the light-emitting device G2 and the comparative light-emitting device G2. [Figure 51] FIG. 51 shows electroluminescence spectra of light-emitting device G2 and comparative light-emitting device G2. [Figure 52] FIG. 52 is a graph showing the normalized luminance vs. time change characteristics of the light-emitting device G2 and the comparative light-emitting device G2. [Figure 53] FIG. 53 is a graph showing the luminance-current density characteristics of the light-emitting device B2 and the comparative light-emitting device B2. [Figure 54] FIG. 54 is a graph showing the current efficiency-luminance characteristics of the light-emitting device B2 and the comparative light-emitting device B2. [Figure 55] FIG. 55 is a graph showing the current density-voltage characteristics of the light-emitting device B2 and the comparative light-emitting device B2. [Figure 56] FIG. 56 is a graph showing the power efficiency-luminance characteristics of the light-emitting device B2 and the comparative light-emitting device B2. [Figure 57] FIG. 57 is a graph showing the blue index-luminance characteristics of the light-emitting device B2 and the comparative light-emitting device B2. [Figure 58] FIG. 58 shows the electroluminescence spectra of light-emitting device B2 and comparative light-emitting device B2. [Figure 59] FIG. 59 is a graph showing the luminance-current density characteristics of light-emitting device R3, light-emitting device G3, and light-emitting device B3. [Figure 60] FIG. 60 is a graph showing the current efficiency-luminance characteristics of light-emitting device R3, light-emitting device G3, and light-emitting device B3. [Figure 61]FIG. 61 is a graph showing the current density-voltage characteristics of light-emitting device R3, light-emitting device G3, and light-emitting device B3. [Figure 62] FIG. 62 is a graph showing the power efficiency-luminance characteristics of light-emitting device R3, light-emitting device G3, and light-emitting device B3. [Figure 63] FIG. 63 is a graph showing the blue index-current density characteristics of light-emitting device B3. [Figure 64] FIG. 64 shows the electroluminescence spectra of light-emitting devices R3, G3, and B3. [Figure 65] FIG. 65 shows the PL spectrum of the exciplex of 8mpTP-4mDBtPBfpm and βNCCP, and the absorption spectrum and PL spectrum of Pt(tBudppymmtBubiz-tBubp). [Figure 66] FIG. 66 is a diagram showing an example of determining the absorption edge of Pt(tBudppymmtBubiz-tBubp). [Figure 67] FIG. 67 shows the PL spectra of 11mDBtBPPnfpr, PCBBiF, and an exciplex of 11mDBtBPPnfpr and PCBBiF. [Figure 68] FIG. 68 shows the PL spectrum of the exciplex of 11mDBtBPPnfpr and PCBBiF, and the absorption spectrum and PL spectrum of OCPG-006. [Figure 69] FIG. 69 shows an example of determining the absorption edge of OCPG-006. DETAILED DESCRIPTION OF THE INVENTION

[0061] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below.

[0062] In this specification, etc., a device fabricated using a metal mask or an FMM (fine metal mask, high-resolution metal mask) may be referred to as a device with an MM (metal mask) structure. In addition, in this specification, etc., a device fabricated without using a metal mask or an FMM may be referred to as a device with an MML (metal maskless) structure.

[0063] (Embodiment 1) A tandem light-emitting device has a structure in which multiple light-emitting units are stacked between a pair of electrodes with an intermediate layer (charge-generating layer) sandwiched between them. Each of the multiple light-emitting units has a light-emitting layer, and light can be emitted from any of the light-emitting layers by passing a current through them. A tandem light-emitting device having such a configuration has significantly higher current efficiency than a non-tandem light-emitting device, and is therefore suitable for use in display devices that require high brightness or high reliability.

[0064] Since tandem light-emitting devices have multiple light-emitting layers, it is easy to obtain white light, and so a white color filter system is often adopted for full-color display systems using tandem light-emitting devices. Color conversion systems using a stacked light-emitting layer that emits blue light and a color conversion layer, typically a quantum dot, have also been put to practical use.

[0065] On the other hand, some display devices using tandem light-emitting devices that employ a color-coded method for full color have also been put to practical use. Color-coded light-emitting devices have little or no energy loss in the color filters or color conversion layers, making them more efficient than the two methods mentioned above.

[0066] At least one of the light-emitting layers of a tandem light-emitting device according to one embodiment of the present invention includes a light-emitting center substance, a first host material, and a second host material. The light-emitting center substance is preferably a phosphorescent light-emitting material. The first host material and the second host material are both organic compounds that form an exciplex. The tandem light-emitting device according to one embodiment of the present invention has a structure in which the light-emitting center substance emits light upon energy transfer from the exciplex formed by the first host material and the second host material to the light-emitting center substance. This improves the efficiency of excitation energy transfer to the light-emitting center substance, resulting in a highly efficient and reliable light-emitting device. Furthermore, a reduction in driving voltage is also achieved.

[0067] In the tandem light-emitting device, it is preferable that the electron transport layer of the light-emitting unit on the cathode side contains a first organic compound having a triazine skeleton, and the intermediate layer contains a second organic compound having a phenanthroline skeleton.

[0068] The above-described light-emitting layer structure may be included in at least one of the light-emitting layers included in the tandem light-emitting device of one embodiment of the present invention, but it is preferable that two or more or all of the light-emitting layers have the same structure. For example, in the case of a tandem light-emitting device having two light-emitting layers, i.e., a first light-emitting layer and a second light-emitting layer, it is preferable that the first light-emitting layer contains a first light-emitting center substance, a third organic compound, and a fourth organic compound, and the third organic compound and the fourth organic compound form an exciplex, and the second light-emitting layer contains a second light-emitting center substance, a fifth organic compound, and a sixth organic compound, and the fifth organic compound and the sixth organic compound form an exciplex.

[0069] As a combination of host materials, one of the first host material and the second host material is preferably an organic compound having hole-transporting properties, and the other is an organic compound having electron-transporting properties, in order to efficiently form an exciplex. Furthermore, it is preferable that the HOMO level of the organic compound having hole-transporting properties is higher than that of the organic compound having electron-transporting properties. Furthermore, it is preferable that the LUMO level of the organic compound having hole-transporting properties is higher than that of the organic compound having electron-transporting properties, in order to efficiently form an exciplex.

[0070] The values ​​of the HOMO level and the LUMO level can be determined by cyclic voltammetry (CV) measurement.

[0071] In cyclic voltammetry (CV) measurements, the HOMO and LUMO levels (E) can be calculated based on the oxidation peak potential (Epa) and reduction peak potential (Epc) obtained by varying the potential of the working electrode relative to the reference electrode. In the measurements, the HOMO level can be determined from a potential scan in the positive direction, and the LUMO level can be determined from a potential scan in the negative direction. The scan rate in the measurements should be 0.1 V / s.

[0072] Specifically, the standard redox potential (Eo) (= (Epa + Epc) / 2) is calculated from the oxidation peak potential (Epa) and reduction peak potential (Epc) obtained from the cyclic voltammogram of the material, and by subtracting this from the potential energy (Ex) relative to the vacuum level of the reference electrode, the HOMO level and LUMO level values ​​(E) (= Ex - Eo) can be calculated, respectively.

[0073] While the above example shows the case where a reversible redox wave is obtained, when an irreversible redox wave is obtained, the HOMO level is calculated by subtracting a fixed value (0.1 eV) from the oxidation peak potential (Epa) and assuming this to be the reduction peak potential (Epc), and the standard redox potential (Eo) is calculated to one decimal place. The LUMO level is calculated by adding a fixed value (0.1 eV) to the reduction peak potential (Epc), and assuming this to be the oxidation peak potential (Epa), and the standard redox potential (Eo) is calculated to one decimal place.

[0074] The formation of exciplexes can be confirmed by, for example, comparing the emission spectra of organic compounds with hole-transporting properties, organic compounds with electron-transporting properties, and a mixed film of these organic compounds and observing the phenomenon that the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of the individual organic compounds (or has a new peak at longer wavelengths). Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of organic compounds with hole-transporting properties, organic compounds with electron-transporting properties, and a mixed film of these organic compounds and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lived component or a larger proportion of delayed components than the transient PL lifetimes of the individual organic compounds. The term transient PL can also be interpreted as transient electroluminescence (EL). That is, the formation of exciplexes can also be confirmed by comparing the transient EL of organic compounds with hole-transporting properties, organic compounds with electron-transporting properties, and a mixed film of these organic compounds and observing differences in transient response.

[0075] In this case, it is preferable that the short-wavelength emission edge of the photoluminescence (PL) spectrum of the exciplex formed by the first host material and the second host material is positioned at a wavelength shorter than the long-wavelength absorption edge of the absorption spectrum of the luminescent center substance. Such a positional relationship between the PL spectrum of the exciplex and the absorption edge of the luminescent center substance enables efficient energy transfer.

[0076] Alternatively, the peak wavelength of the PL spectrum of the exciplex formed by the first host material and the second host material is preferably shorter than the peak wavelength of the PL spectrum of the luminescent center substance. Furthermore, the difference between the peak wavelength of the PL spectrum of the exciplex and the peak wavelength of the PL spectrum of the luminescent center substance is more preferably 30 nm or less. Such a relationship between the peak wavelength of the PL spectrum of the exciplex and the peak wavelength of the PL spectrum of the luminescent center substance enables efficient energy transfer.

[0077] Alternatively, the difference between the peak wavelength of the PL spectrum of the exciplex formed by the first host material and the second host material and the wavelength of the absorption edge on the long-wavelength side in the absorption spectrum of the luminescent center substance is preferably within 30 nm. Such a relationship between the peak wavelength of the PL spectrum of the exciplex and the wavelength of the absorption edge on the long-wavelength side in the absorption spectrum of the luminescent center substance enables efficient energy transfer.

[0078] The PL spectrum of the exciplex is preferably measured using a co-evaporated film of the first host material and the second host material. On the other hand, the sample form for measuring the PL spectrum or absorption spectrum of the luminescent center substance may be a thin film or a solution, but a solution is preferred from the viewpoint of examining the state of isolated molecules. The solvent for the solution is preferably a solvent with relatively low polarity, such as toluene or chloroform.

[0079] The absorption edge of the absorption spectrum can be calculated by drawing a tangent at the point where the absolute value of the slope on the long-wavelength side of the peak (or shoulder peak) observed at the longest wavelength in the absorption spectrum is maximized, and then calculating from the intersection of the tangent with the horizontal axis or the baseline. The emission edge on the short-wavelength side of the PL spectrum can be calculated by drawing a tangent at the point where the absolute value of the slope on the short-wavelength side of the peak (or shoulder peak) observed at the shortest wavelength in the PL spectrum is maximized, and then calculating from the intersection of the tangent with the horizontal axis or the baseline.

[0080] As described above, one of the first host material and the second host material is preferably an organic compound having an electron transporting property, and the other is preferably an organic compound having a hole transporting property.

[0081] As an organic compound with electron transport properties, the electron mobility at a square root of the electric field strength [V / cm] of 600 is 1×10 -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 Organic compounds having a .DELTA. / Vs or higher are preferred.

[0082] The organic compound having electron transport properties is preferably an organic compound having a π-electron-deficient heteroaromatic ring, such as an organic compound having an azole skeleton, an organic compound having a pyridine skeleton, an organic compound having a diazine skeleton, or an organic compound having a triazine skeleton.

[0083] Among these, organic compounds containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reduced driving voltage. In addition, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because of their high acceptor properties and high reliability.

[0084] As organic compounds having a π-electron-deficient heteroaromatic ring that can be used as organic compounds having electron transport properties, for example, the following organic compounds are preferred: 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), and other organic compounds with an azole skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35 DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl phenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9mDBtBPNf pr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviated as 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviated as 4,6mCzP2Pm), 9,9'-[pyrimidinyl benzofuro[3,2-d]pyrimidine (abbreviated as 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P -Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviated as 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]pyrimidine [4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h ]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), organic compounds with a diazine skeleton such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), and 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-Diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]- 4,6-Diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmP PPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: m TpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 2-[4-(2-naphthalenyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9'-[9H]xanthene]-4-yl-1,3,5-triazine (abbreviation: βNP-SFx(4)Tzn), 9,9'-{6-[3-(triphenylsilyl)phenyl]-1,3,5-triazine-2,4-diyl}bis(9H-carbazole) (abbreviation: SiTrzCz2), 2-phenyl-4,6-bis[3-(triphenylsilyl)phenyl]-1,3,5-triazine (abbreviation: mSiTrz), 11-[4-(biphenyl [4,6-Diphenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-(biphenyl-3-yl)indolo[2,3-a]carbazole (abbreviation: BP-mBPIcz(II)Tzn), 3-{3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]phenyl}-9-phenyl-9H-carbazo mPCPDBfTzn), 9,9'-[6-(biphenyl-4-yl)-2-phenyl-1,3,5-triazine-4,3''-diyl]bis(9H-carbazole) (Cz-pmCzBPTzn), 3-phenyl-9-[4-phenyl-6-(9-phenyl-3-dibenzofuranyl)-1,3,5-triazin-2-yl]-9H-carbazole (Cz-pmCzBPTzn), Examples of such compounds include organic compounds containing heteroaromatic rings with a triazine skeleton, such as 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzothienyl]-2-phenyl-9H-carbazole (abbreviated as PCzDBtTzn), and 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviated as 2Py3Tzn).

[0085] The organic compound having hole transport properties is preferably an organic compound having an amine skeleton or a π-electron-rich heteroaromatic ring. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton, and more specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is fused to one of these rings.

[0086] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these hole-transporting substances are organic compounds having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with long lifetimes.

[0087] As such an organic compound, for example, the following organic compounds are preferable: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3 ... mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), )triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), compounds with an aromatic amine skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl ( abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3,9-bis(9-phenyl-9H-carbazole-3-yl)-9H-carbazole (abbreviation: PCCzPC), 9-(biphenyl-4-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: PCCzBP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-Bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3, 3'-Bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H ,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-Bis(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, 9-[3-(triphenylsilyl)phenyl]-3,Compounds with a carbazole skeleton, such as 9'-bi-9H-carbazole (abbreviation: PSiCzCz) and 9'-[3-(triphenylsilyl)phenyl]-9'H-9,3':6',9''-tercarbazole (abbreviation: PSiCzGI), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), and 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-I) Examples of suitable compounds include compounds having a thiophene skeleton such as 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage.

[0088] As described above, it is preferable that one of the first host material and the second host material is an organic compound having electron transport properties and the other an organic compound having hole transport properties. Furthermore, a combination of these materials is preferable in that one is an organic compound having a π-electron-deficient heteroaromatic ring and the other is an organic compound having an amine skeleton or a π-electron-rich heteroaromatic ring, because these materials have excellent carrier transport properties and efficiently form exciplexes. Alternatively, it is more preferable that one is an organic compound having a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton or an organic compound having a heteroaromatic ring with a triazine skeleton, and the other is an organic compound having a carbazole skeleton, dibenzofuran skeleton, or dibenzothiophene skeleton, because these materials have high triplet excitation energy. Furthermore, it is preferable that one is an organic compound having a triazine skeleton or pyrimidine skeleton and the other is an organic compound having a carbazole skeleton, because these materials are stable and reliable. As the organic compound having a carbazole skeleton, an organic compound having a 3,3′-bicarbazole skeleton is particularly preferable because it has high donor properties and high heat resistance. It is also very preferable that one of the first host material and the second host material is an organic compound having a 3,3′-bicarbazole skeleton and the other is an organic compound having a triazine skeleton because it has high triplet excitation energy, stability, and good reliability.

[0089] By mixing an organic compound having electron transport properties with an organic compound having hole transport properties, the transport properties of the light-emitting layer can be easily adjusted and the recombination region can be easily controlled. The weight ratio of the organic compound having hole transport properties to the organic compound having electron transport properties may be 1:19 to 19:1, preferably 3:7 to 7:3.

[0090] Furthermore, the light-emitting layer of the tandem light-emitting device is preferably separated from the light-emitting layer of at least one of the other adjacent light-emitting devices. Alternatively, the light-emitting layer of the tandem light-emitting device is preferably different from the light-emitting layer of at least one of the other adjacent light-emitting devices. Alternatively, the color of light emitted by the tandem light-emitting device or a pixel having the tandem light-emitting device is preferably different from the color of light emitted by at least one of the other adjacent light-emitting devices or pixels. Alternatively, the light-emitting center substance of the light-emitting layer of the tandem light-emitting device preferably has a different structure from the light-emitting center substance of the light-emitting layer of at least one of the other adjacent light-emitting devices.

[0091] In this tandem light-emitting device, it is preferable that the electron transport layer of the cathode-side light-emitting unit contains a first organic compound having a triazine skeleton, and the intermediate layer contains a second organic compound having a phenanthroline skeleton. By including the first organic compound in the electron transport layer of the cathode-side light-emitting unit and the second organic compound in the intermediate layer, a tandem light-emitting device with low driving voltage can be obtained. Furthermore, by including the first organic compound in the electron transport layer of the cathode-side light-emitting unit and the second organic compound in the intermediate layer, and by including two organic compounds that form an exciplex with a light-emitting center substance in either of the light-emitting layers, a tandem light-emitting device with lower driving voltage can be obtained. Furthermore, the light-emitting efficiency is improved, resulting in a light-emitting device with good power efficiency and energy efficiency.

[0092] Furthermore, the light-emitting layer of the tandem light-emitting device is separated from the light-emitting layer of at least one of the other adjacent light-emitting devices, or the light-emitting layer of the tandem light-emitting device is a light-emitting layer different from the light-emitting layer of at least one of the other adjacent light-emitting devices, or the color of light emitted by the tandem light-emitting device is different from the color of light emitted by at least one of the other adjacent light-emitting devices, or the light-emitting center substance of the light-emitting layer of the tandem light-emitting device has a different composition from the light-emitting center substance of the light-emitting layer of at least one of the other adjacent light-emitting devices, thereby making it possible to make a light-emitting device with very good current efficiency, and therefore better power efficiency and energy efficiency.

[0093] As a result, a display device according to one embodiment of the present invention using such a light-emitting device can be a display device with low power consumption, high reliability, and high luminance, and can provide good visibility and display quality.

[0094] The first organic compound containing a triazine skeleton has an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 It is preferable that the value is / Vs or more. Note that, other substances can be used as long as they have a higher electron transporting property than a hole transporting property.

[0095] The first organic compound containing a triazine skeleton is preferably a compound containing a triazine skeleton and an aromatic ring. The aromatic ring may be a monocyclic aromatic ring, a polycyclic aromatic ring, an aromatic ring having an alkyl group as a substituent, an aromatic ring having a fluoro group as a substituent, or an aromatic ring having a cyano group as a substituent. The triazine skeleton may have a substituent other than the aromatic ring, and the aromatic ring may have a substituent other than the triazine skeleton. The triazine skeleton is also called a triazine ring, and the skeleton of other skeletons can also be referred to as a ring.

[0096] Examples of the monocyclic aromatic ring include aromatic hydrocarbon rings such as a benzene ring, and heteroaromatic rings such as a pyrrole ring, a pyridine ring, a pyrimidine ring, a triazine ring, etc. Having an aromatic ring as a substituent improves heat resistance, specifically, has the effect of improving the glass transition temperature (Tg), and has the effect of improving electron transport properties.

[0097] Examples of polycyclic aromatic rings include aromatic hydrocarbon rings such as naphthalene rings, phenanthrene rings, chrysene rings, triphenylene rings, fluorene rings, and spirobifluorene rings, as well as heteroaromatic rings such as carbazole rings, dibenzofuran rings, dibenzothiophene rings, xanthene rings, indolocarbazole rings, and indenocarbazole rings. Compounds having polycyclic aromatic rings as substituents are preferred because they can improve heat resistance compared to compounds having monocyclic aromatic rings such as benzene rings. Furthermore, compounds having a ring in which an aromatic ring (such as a benzene ring, naphthalene ring, or pyridine ring) is fused to these polycyclic aromatic rings as a substituent can further improve heat resistance. Examples of rings in which an aromatic ring is fused to a polycyclic aromatic ring include a benzofluorene ring, a benzonaphthofuran ring, a benzoxanthene ring, and a benzonaphthothiophene ring. By providing a layer containing a highly heat-resistant compound near the cathode, damage to the element due to heat can be suppressed when high-temperature treatment such as a patterning step is performed after forming the layer or the cathode.

[0098] Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, a tertiary butyl group, a cyclohexyl group, and an adamantyl group. A first organic compound having an alkyl group as a substituent can be an organic compound with a low refractive index, and a layer using the first organic compound can have a low refractive index. This can suppress total reflection at the interface between the layer and other layers, thereby improving the light extraction efficiency of a light-emitting device using the layer. Furthermore, by using a compound having such an alkyl group in the hole transport layer, the refractive index of the hole transport layer can be reduced. In particular, by using a compound having a triazine skeleton and an alkyl group in the electron transport layer and a compound having an aromatic amine skeleton and an alkyl group in the hole transport layer, the light extraction efficiency can be improved synergistically. Furthermore, organic compounds having multiple carbon atoms, preferably 3 or more, more preferably 4 or more, and even more preferably 5 or more, as alkyl groups can enhance the refractive index reduction effect. Furthermore, a layer using a compound having a fluoro group as a substituent is also preferred because it can reduce the refractive index. In particular, organic compounds having multiple fluoro groups can enhance the refractive index reduction effect. It is also effective to use a compound having a fluoro group in both the electron transport layer and the hole transport layer. Furthermore, a compound having a structure in which multiple alkyl groups or fluoro groups are bonded to one aromatic ring can further lower the refractive index of the layer. For example, a structure in which two or more tertiary butyl groups are bonded to one benzene ring as a substituent can be used. This is not limited to a benzene ring; it can also be a structure in which multiple alkyl groups or fluoro groups are bonded to other monocyclic aromatic rings such as a pyridine ring or a polycyclic aromatic ring such as a fluorene ring. It is also preferable to use a polycyclic aromatic ring (such as a naphthalene ring, a fluorene ring, a carbazole ring, a quinoline ring, or a xanthene ring) in which multiple alkyl groups or fluoro groups are bonded to some of the rings that constitute it. For example, a structure in which multiple tertiary butyl groups are bonded to one benzene ring that constitutes a fluorene ring can be used.

[0099] In addition, the first organic compound having a cyano group as a substituent is preferable because it can improve the electron transporting property.

[0100] It is also preferable to combine two or more of a polycyclic aromatic ring, an alkyl group, a fluoro group, or a cyano group as the substituent of the first organic compound. For example, when the first organic compound has a polycyclic aromatic ring and a cyano group as the substituent, both heat resistance and electron transport properties can be improved. Furthermore, when the first organic compound has a polycyclic aromatic ring and an alkyl group, both heat resistance and light extraction efficiency can be improved. In this way, a combination of substituents can be used depending on the desired function.

[0101] Furthermore, the first organic compound having a plurality of polycyclic aromatic rings as substituents can further improve heat resistance. In this case, the first organic compound preferably contains the aromatic hydrocarbon ring and the heteroaromatic ring.

[0102] Specific examples of the first organic compound including a triazine skeleton include 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), Triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5 -triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6 -dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 2-[4-(2-naphthalenyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9'-[9H]xanthene]-4-yl-1,3,5-triazine (abbreviation: β NP-SFx(4)Tzn), 9,9'-{6-[3-(triphenylsilyl)phenyl]-1,3,5-triazine-2,4-diyl}bis(9H-carbazole) (abbreviated as SiTrzCz2), 2-phenyl-4,6-bis[3-(triphenylsilyl)phenyl]-1,3,5-triazine (abbreviated as mSiTrz), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-(biphenyl-3-yl)indolo[2,3-a]carbazole (abbreviated as BP-mBPIc z(II)Tzn), 3-{3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]phenyl}-9-phenyl-9H-carbazole (abbreviated as mPCPDBfTzn), 9,9'-[6-(biphenyl-4-yl)-2-phenyl-1,3,5-triazine-4,3''-diyl]bis(9H-carbazole) (abbreviated as Cz-pmCzBPTzn), 3-phenyl-9-[4-phenyl-6-(9-phenyl-3-dibenzofuranyl)-1,3,5-triazin-2-yl]-9H-carbazole (abbreviated as Cz-pmCzBPTzn), abbreviation: PDBf-PCzTzn), 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzothienyl]-2-phenyl-9H-carbazole (abbreviation: PCzDBtTzn), 2,4-diphenyl-6-[3'-(spiro[7H-benzo[c]fluorene-7,9'-[9H]xanthene]-2'-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: mSbfxBPTzn), 3'-[4-phenyl-6-(spiro[9H-fluorene-9,9'-[9H]xanthene]-2'-yl)-1,3,Organic compounds containing a heteroaromatic ring with a triazine skeleton, such as 5-triazin-2-yl]biphenyl-4-carbonitrile (abbreviation: mpCNBP-SFxTzn) and 2,2'-[1,2-naphthalenediyldi(4,1-phenylene)]bis(4,6-diphenyl-1,3,5-triazine) (abbreviation: TznP2N), can be used. However, TznP2N (100), mSbfxBPTzn (101), mpCNBP-SFxTzn (102), CNBPNPTzn (103), βNP-SFx (4)Tzn (104), mmtBuBP-mDMePyPTzn (105), mBnfBPTzn (106), and the like, represented by the following structural formulas (100) to (106), are particularly preferred.

[0103] [ka]

[0104] The electron transport layer included in the light-emitting unit on the anode side may be a layer containing a seventh organic compound having a triazine skeleton, or a layer containing an eighth organic compound not having a triazine skeleton, similar to the electron transport layer included in the light-emitting unit on the cathode side.

[0105] The electron transport layer included in the light-emitting unit on the anode side preferably contains a seventh organic compound having a triazine skeleton to reduce power consumption. In particular, it is preferable that the seventh organic compound is the same as the first organic compound, because this prevents the manufacturing equipment from becoming too complex and is advantageous in terms of raw material procurement costs.

[0106] Furthermore, the electron transport layer included in the light-emitting unit on the anode side contains an eighth organic compound that does not contain a triazine skeleton, which facilitates control of carrier transport properties and enables the provision of a light-emitting device with better characteristics. Organic compounds that do not contain a triazine skeleton are preferably organic compounds that contain a heteroaromatic ring with a pyridine skeleton or a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton. It should be noted that organic compounds obtained by appropriately deuterating the above-listed organic compounds can also be used.

[0107] The second organic compound containing the phenanthroline skeleton contained in the intermediate layer has an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 It is preferable that the value is / Vs or more. Note that, other substances can be used as long as they have a higher electron transporting property than a hole transporting property.

[0108] The second organic compound containing a phenanthroline skeleton is preferably a compound containing a phenanthroline skeleton and an aromatic ring, which may be a monocyclic aromatic ring or a polycyclic aromatic ring.

[0109] Examples of the monocyclic aromatic ring include a benzene ring, a pyrrole ring, a pyridine ring, and a pyrimidine ring. Furthermore, examples of the polycyclic aromatic ring include aromatic hydrocarbon rings such as a naphthalene ring, a phenanthrene ring, a chrysene ring, a triphenylene ring, and a fluorene ring, and heteroaromatic rings such as a phenanthroline ring and a pyrrole ring. In particular, the inclusion of a plurality of these polycyclic aromatic rings is preferred because it can improve heat resistance or electron transport properties.

[0110] Examples of the second organic compound containing a phenanthroline skeleton include bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline (abbreviation: mTpPPhen), and 2-phenyl-9-(2-triphenylenyl)phenyl. Organic compounds containing a heteroaromatic ring having a phenanthroline skeleton, such as 2-[4-(9-phenanthrenyl)-1-naphthalenyl]-1,10-phenanthroline (abbreviation: Ph-TpPhen), 2-[4-(9-phenanthrenyl)-1-naphthalenyl]-1,10-phenanthroline (abbreviation: PnNPhen), and 2-[4-(2-triphenylenyl)phenyl]-1,10-phenanthroline (abbreviation: pTpPPhen), can be used. However, PnNPhen(200) and mPPhen2P(201), represented by the following structural formula (200) or (201), are preferred.

[0111] [ka]

[0112] In the light-emitting device of one embodiment of the present invention, the intermediate layer may have any structure as long as it contains a second organic compound having a phenanthroline skeleton and can inject electrons into the light-emitting unit on the anode side and holes into the light-emitting unit on the cathode side, both of which are in contact with the intermediate layer, when a voltage is applied between the anode and the cathode. However, the intermediate layer preferably has a stacked structure including a first layer containing the second organic compound and a second layer located closer to the cathode than the first layer.

[0113] The first layer preferably contains a metal or a metal compound in addition to the second organic compound. The metal or metal in the metal compound is preferably an alkali metal (Group 1 element) such as Li, an alkaline earth metal (Group 2 element) such as Mg or Ca, a Group 3 element including a lanthanide such as Y, Eu, or Yb, a Group 11 element such as Cu, Ag, or Au, a Group 12 element such as Zn, or an earth metal (Group 13 element) such as Al or In.

[0114] The first layer may have a stacked structure of a layer containing an organic compound and a layer having a metal or metal compound located closer to the cathode than the layer containing the organic compound, or may be a mixed layer of an organic compound and a metal or metal compound. A mixed layer is preferable because it can reduce the number of required film formation chambers, thereby reducing manufacturing costs, and also contributes to improving the stability of the light-emitting device.

[0115] When an organic compound and a metal or metal compound are mixed, the distribution of the organic compound and the distribution of the metal or metal compound show roughly the same tendency when the first layer is analyzed in the film thickness direction. That is, when the distribution of the organic compound is constant, the distribution of the metal or metal compound is also roughly constant. In the case of a laminated structure of a layer containing an organic compound and a layer having a metal or metal compound, the metal or metal compound may be detected in areas other than the layer having the metal or metal compound due to diffusion from the layer having the metal or metal compound, but since the distribution shows a different distribution from the distribution of the organic compound, the analysis results can be distinguished between diffusion and mixing.

[0116] Furthermore, when the first layer is analyzed in the film thickness direction, if there is a region in which a metal or metal compound is detected that is 10 nm or more, preferably 15 nm or more, and more preferably 20 nm or more, the first layer can be considered to have a mixed layer in which an organic compound and a metal or metal compound are mixed.

[0117] In particular, the metal in the metal or metal compound is preferably a substance that exhibits donor properties to the second organic compound. Examples of substances that exhibit donor properties to the second organic compound include metals of Group 1 and Group 2, with lithium or a lithium compound being particularly preferred. Specifically, Li, lithium fluoride (LiF), lithium oxide (LiO), and 8-hydroxyquinolinato-lithium (abbreviation: Liq) are preferred. When the first layer contains a second organic compound and a substance that exhibits donor properties to the second organic compound, electrons are generated by charge separation. When a voltage is applied between the anode and the cathode, the electrons are injected into the light-emitting unit on the anode side via the second organic compound. This allows the light-emitting device of one embodiment of the present invention to have a low driving voltage.

[0118] In addition to the organic compounds described above, the second organic compound is preferably an organic compound containing a phenanthroline skeleton with an electron-donating substituent. The phenanthroline skeleton is a skeleton that easily interacts with metals, etc., and when the second organic compound containing such a phenanthroline skeleton further contains an electron-donating group, the electron density of the phenanthroline skeleton increases, making it more likely to interact with metals or metal compounds. In particular, when a metal belonging to Groups 3, 11, 12, or 13 is used as the metal or the metal in the metal compound, an increase in driving voltage can be suppressed, and a tandem light-emitting device with excellent characteristics can be provided.

[0119] Specific examples of the electron-donating group include an alkyl group, an alkoxy group, an aryloxy group, an alkylamino group, an arylamino group, and a heterocyclic amino group. However, the electron-donating group that is preferably introduced into the phenanthroline ring is not limited to these. Any group that can increase the electron density of the phenanthroline ring by introducing it into the phenanthroline ring can be used as the electron-donating group. In addition, the electron-donating group may be introduced into the phenanthroline ring via an arylene group such as a phenylene group, and the arylene group is preferably a p-phenylene group.

[0120] Specific examples of organic compounds that can be used as the second organic compound are shown in structural formulas (300) to (311).

[0121] [ka]

[0122] Note that a configuration in which the first layer contains a Group 1 or Group 2 element, particularly lithium or a lithium compound, and a second organic compound containing a phenanthroline skeleton with an electron-donating substituent is preferred because it can provide a tandem light-emitting device with lower drive voltage and better reliability. Furthermore, a configuration in which the first layer contains a Group 1 or Group 2 element, particularly lithium or a lithium compound, and a second organic compound containing a phenanthroline skeleton with an electron-donating substituent is preferred because it can suppress an increase in drive voltage when processing the organic compound layer of the light-emitting device by photolithography.

[0123] In an intermediate layer having the above-described configuration, the second organic compound is preferably an organic compound having a phenanthroline skeleton, particularly an organic compound having a 1,10-phenanthroline skeleton, because the two nitrogen atoms contained therein can coordinate to a metal and therefore interact easily with the metal or metal compound.

[0124] When an electron-donating group is introduced into the 1,10-phenanthroline skeleton, the electron-donating group is preferably substituted at positions 4 and 7 of the 1,10-phenanthroline skeleton. By introducing the electron-donating group into positions 4 and 7 of the 1,10-phenanthroline skeleton, the electron density of the nitrogen atoms at positions 1 and 10 can be increased, making it easier for the 1,10-phenanthroline skeleton to interact with a metal or metal compound.

[0125] The first layer may further contain an organic compound different from the second organic compound. The organic compound is preferably an organic compound having electron transport properties. In particular, the organic compound preferably has two or more heteroaromatic rings bonded or condensed to each other, and the two or more heteroaromatic rings preferably have a total of three or more heteroatoms. By including such an organic compound in the first layer, improvements in heat resistance and electron transport properties can be achieved.

[0126] The second layer preferably contains a ninth organic compound having hole-transporting properties. The second layer preferably further contains a substance exhibiting acceptor properties, and the substance exhibiting acceptor properties is preferably an organic compound exhibiting acceptor properties to the ninth organic compound. As the substance exhibiting acceptor properties, an organic compound having at least one of a halogen group and a cyano group is particularly preferred, and an organic compound having at least one of a fluorine group and a cyano group is more preferred. It is more preferred that the organic compound contains four or more halogen groups (fluorine) and cyano groups in total.

[0127] When the second layer contains a ninth organic compound and a substance that exhibits acceptor properties for the ninth organic compound, holes are generated by charge separation, and when a voltage is applied between the anode and the cathode, the holes are injected into the light-emitting unit on the cathode side via the ninth organic compound. This allows the light-emitting device of one embodiment of the present invention to have a low driving voltage.

[0128] The intermediate layer may have a third layer between the first and second layers.

[0129] The third layer contains a substance with electron transport properties and has functions such as smoothing the transfer of electrons between the first and second layers to reduce the driving voltage, and reducing the interaction between the first and second layers to improve reliability.

[0130] The thickness of the third layer is preferably 1 nm or more and 10 nm or less, more preferably 2 nm or more and 5 nm or less, in order to suppress an increase in driving voltage.

[0131] The light-emitting device of the present invention having the above-described structure can be a light-emitting device with high current efficiency, low energy loss, and favorable characteristics. In addition, a display device according to one embodiment of the present invention using such a light-emitting device can be a display device with low power consumption, high reliability, and high luminance and thus favorable visibility.

[0132] Next, a light-emitting device according to one embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1A illustrates a light-emitting device 130 according to one embodiment of the present invention. The light-emitting device according to one embodiment of the present invention is a tandem light-emitting device including a first electrode 101 including an anode and a second electrode 102 including a cathode, and an organic compound layer 103 (also referred to as an EL layer) including a first light-emitting unit 501 including a first light-emitting layer 113_1, a second light-emitting unit 502 including a second light-emitting layer 113_2 and a second electron-transport layer 114_2, and an intermediate layer 116. Note that the first light-emitting unit may include a first electron-transport layer 114_1 between the first light-emitting layer 113_1 and the intermediate layer 116.

[0133] In the light-emitting device 130, the second electron-transporting layer 114_2 contains a first organic compound having a triazine skeleton, and the intermediate layer 116 contains a second organic compound having a phenanthroline skeleton. In addition, the second electron-transporting layer 114_2 containing the first organic compound having a triazine skeleton is preferably in contact with the second electrode 102 in order to reduce power consumption.

[0134] Although the present embodiment will be described taking as an example a light-emitting device having one intermediate layer 116 and two light-emitting units, the light-emitting device may have n (n is an integer of 1 or more) intermediate layers and n+1 light-emitting units. For example, the light-emitting device 130 shown in FIG. 1(B) is an example of a tandem light-emitting device in which n is 2 and the device has a first light-emitting unit 501, a first intermediate layer 116_1, a second light-emitting unit 502, a second intermediate layer 116_2, and a third light-emitting unit 503.

[0135] The first light-emitting unit 501 and the second light-emitting unit 502 may include other functional layers in addition to the above-described light-emitting layer, electron-transport layer, and the like. In FIG. 1A, the first light-emitting unit 501 includes the hole-injection layer 111 and the first hole-transport layer 112_1 in addition to the first light-emitting layer 113_1 and the first electron-transport layer 114_1, and the second light-emitting unit 502 includes the second hole-transport layer 112_2 in addition to the second light-emitting layer 113_2 and the second electron-transport layer 114_2. However, the structure of the organic compound layer 103 in one embodiment of the present invention is not limited thereto. Any of these layers may be omitted, or other layers may be included. Typical examples of such other layers include a carrier blocking layer and an exciton blocking layer.

[0136] The first electrode 101 is an electrode including an anode. The first electrode 101 may have a stacked structure, in which case the layer in contact with the organic compound layer 103 functions as the anode. The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof having a large work function (specifically, 4.0 eV or more). Specific examples include indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide, indium zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but may also be formed by applying a sol-gel method or the like. For example, indium zinc oxide may be formed by sputtering using a target in which 1 to 20 wt % of zinc oxide is added to indium oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % tungsten oxide and 0.1 to 1 wt % zinc oxide relative to indium oxide. Other materials that can be used for the anode include gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), and nitrides of metal materials (e.g., titanium nitride). Graphene can also be used for the anode. Using the composite material constituting the second layer 117 of the intermediate layer 116 as a layer in contact with the anode (typically a hole injection layer) allows for the selection of an electrode material regardless of the work function.

[0137] The hole injection layer 111 is provided in contact with the anode and has the function of facilitating injection of holes into the organic compound layer 103 (first light-emitting unit 501). The hole injection layer 111 can be formed of a phthalocyanine-based compound or complex compound such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / polystyrenesulfonic acid (abbreviation: PEDOT / PSS).

[0138] Alternatively, the hole injection layer 111 may be formed of a substance having electron acceptor properties. Examples of the substance having acceptor properties include organic compounds having an electron-withdrawing group (such as a halogen group or a cyano group), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having multiple heteroatoms, such as HAT-CN, are preferred because of their thermal stability. Radialene derivatives having electron-withdrawing groups (especially halogen groups such as fluoro groups, cyano groups, etc.) are also preferred because of their extremely high electron-accepting properties. Specific examples include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. As the substance having acceptor properties, in addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can be used.Alternatively, the hole injection layer 111 can be formed using a phthalocyanine compound or complex compound such as phthalocyanine (abbreviation: HPc) or copper phthalocyanine (abbreviation: CuPc), an aromatic amine compound such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) or 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or a polymer such as poly(3,4-ethylenedioxythiophene) / polystyrene sulfonic acid (abbreviation: PEDOT / PSS). Acceptor materials can extract electrons from an adjacent hole transport layer (or hole transport material) when an electric field is applied.

[0139] The hole-injecting layer 111 is preferably formed using a composite material containing the above-mentioned material having an acceptor property and a substance having a hole-transport property.

[0140] As a substance having hole transport properties used in a composite material, various organic compounds such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.) can be used. Note that as a substance having hole transport properties used in a composite material, a 1×10 -6 cm 2 Preferably, the compound has a hole mobility of 1 / Vs or more. The hole-transporting substance used in the composite material is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferred. As the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton is preferred. Specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above ring is preferred.

[0141] Such a substance having hole-transporting properties preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, the substance may be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen atom of the amine via an arylene group. It is preferable that the substance having hole-transporting properties has an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of a light-emitting device with a long lifetime.

[0142] Specific examples of the substance having the hole transporting property as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4'-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4''-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-yl, [b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]- N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβN B-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviated as BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviated as BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviated as BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviated as BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] 4'-[4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4-yl]-4''-phenyltriphenylamine (abbreviated as TPBiAβNBi), 4-phenyl-4'-(1-naphthyl)triphenylamine (abbreviated as αNBA1BP), 4,4'-bis(1-naphthyl)triphenylamine (abbreviated as αNBB1BP), 4,4'-diphenyl-4''-[4'-(carbazol-9-yl)biphenyl-4-yl]triphenylamine (abbreviated as YGTBi1BP), 4'-[4-(3-phenyl-9H-carbazol-9-yl)furan N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-[4-(9-phenylfluoren-9-yl)triphenylamine] 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine Triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF), N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-4-amine, N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviation: PSiCzCz), 9'-[3-(triphenylsilyl)phenyl]-9'H-9,3':6',Examples include 9''-terecarbazole (abbreviation: PSiCzGI).

[0143] Other aromatic amine compounds that can be used as the hole-transporting substance include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0144] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0145] Among substances having acceptor properties, organic compounds having acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0146] The hole transport layers (the first hole transport layer 112_1 and the second hole transport layer 112_2) are formed by containing an organic compound having a hole transport property. -6 cm 2 It is preferable that the hole mobility is / Vs or more.

[0147] Examples of the organic compound having hole transport properties include 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), and 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP). -3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviated as mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl)triphenylamine (abbreviated as PCBANB) Compounds with an aromatic amine skeleton such as 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-diphenyl- (N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-Bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1' :4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3' ,1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, Compounds with a carbazole skeleton such as N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, and 9-[3-(triphenylsilyl)phenyl]-3,9'-bi-9H-carbazole (abbreviation: PSiCzCz), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. The organic compounds listed as the substances having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for the hole transport layer 112. Note that organic compounds obtained by appropriately deuterating the above-listed organic compounds can also be used in the same way.

[0148] The first hole-transport layer 112_1 and the second hole-transport layer 112_2 preferably contain an organic compound having the same skeleton, and more preferably contain the same compound. One or both of the first hole-transport layer 112_1 and the second hole-transport layer 112_2 may have a stacked structure. By forming the hole-transport layer 112 into a stacked structure and using an organic compound with high electron resistance and / or an organic compound with electron blocking properties in the layer closer to the light-emitting layer 113, a highly reliable light-emitting device can be obtained. When the hole-transport layer 112 has a stacked structure, the layer closer to the light-emitting layer 113 is preferably made of a material with excellent hole-transport properties, low electron-transport properties, and a high LUMO level. The LUMO level of this material is preferably higher than that of the material with the highest composition ratio among the materials constituting the light-emitting layer or the material with the highest LUMO level among the materials constituting the light-emitting layer, preferably by 0.30 eV or more. The material is preferably an organic compound having an amine skeleton and a polycyclic heteroaromatic ring, and more preferably an organic compound having an amine skeleton and a furan skeleton or a dibenzofuran skeleton. When the hole-transport layer 112 has a stacked structure, using such a material for the layer closer to the light-emitting layer 113 can prevent electrons from passing through from the light-emitting layer 113 to the first electrode 101, thereby enabling the manufacture of a highly efficient display device with a long lifetime. Note that in the hole-transport layer 112 having a stacked structure, an organic compound having an amine skeleton and a polycyclic hydrocarbon is preferably used for the layer closer to the first electrode 101, and an organic compound having an amine skeleton and a fluorene skeleton is more preferably used. Organic compounds having an amine skeleton and a fluorene skeleton are preferred because they have good reliability and high hole-transport properties, thereby reducing the power consumption of the light-emitting device.

[0149] The light-emitting layers (the first light-emitting layer 113_1 and the second light-emitting layer 113_2) preferably contain a light-emitting center substance and a host material. At least one of the light-emitting layers preferably contains a light-emitting center substance, a first host material, and a second host material, and the first host material and the second host material are both organic compounds that form an exciplex. It is preferable that both the first light-emitting layer 113_1 and the second light-emitting layer 113_2 have this structure. Note that the light-emitting layers may also contain other materials.

[0150] Furthermore, the first light-emitting layer 113_1 and the second light-emitting layer 113_2 are preferably light-emitting layers that emit light of similar colors. For example, red, green, and blue pixels are often used in display devices to express full colors. In a light-emitting device used for a red pixel, both the first light-emitting layer 113_1 and the second light-emitting layer 113_2 are light-emitting layers that emit red light. In a light-emitting device used for a green pixel, both the two light-emitting layers are light-emitting layers that emit green light. In a light-emitting device used for a blue pixel, both the first light-emitting layer 113_1 and the second light-emitting layer 113_2 emit blue light. In this case, the light-emitting center substance contained in the first light-emitting layer 113_1 and the light-emitting center substance contained in the second light-emitting layer 113_2 are preferably compounds whose difference in maximum peak wavelength in their emission spectra is 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less. It is more preferable that the light-emitting center substance contained in the first light-emitting layer 113_1 and the light-emitting center substance contained in the second light-emitting layer 113_2 are the same. It is more preferable that the first light-emitting layer 113_1 and the second light-emitting layer 113_2 are made of the same material.

[0151] The luminescent center substance may be a fluorescent substance, a phosphorescent substance, a substance exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent substance.

[0152] Examples of fluorescent substances that can be used as the luminescent center substance in the light-emitting layer include the following: In addition, fluorescent substances other than these can also be used.

[0153] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviated as 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviated as 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviated as DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazol-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB),6-Bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJTM), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b]naphtho]] Examples include N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviated as 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds, such as pyrenediamine compounds 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03, are preferred due to their high hole-trapping properties and excellent luminous efficiency and reliability.

[0154] In the light-emitting layer, the phosphorescent material that can be used as the luminescent center material is preferably a metal complex, particularly an iridium complex or a platinum complex, and examples thereof include the following.

[0155] Organometallic iridium complexes with a 4H-triazole skeleton, such as tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp)3]) and tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz)3]). , organometallic iridium complexes with a 1H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me)3]), fac-tris[1-(2,6-di [Ir(iPrpim)3]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me)3]), tris(2-{1-[2,6-bis(1-methylethyl)phenyl]-1H-imidazol-2-yl-κN3}-4-cyano organometallic iridium complexes with an imidazole skeleton, such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: CNImIr), organometallic complexes with a benzimidazolidene skeleton, such as tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC2)phenyl-κC]iridium(III) (abbreviation: [Ir(cb)3]), and organometallic complexes with a benzimidazolidene skeleton, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C 2’}iridium(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C 2’ Examples include organometallic iridium complexes with phenylpyridine derivatives containing electron-withdrawing groups, such as ]iridium(III) acetylacetonate (abbreviated as FIracac), and platinum complexes such as (2-{3-[3-(3,5-di-tert-butylphenyl)benzimidazol-1-yl-2-ylidene-κC2]phenoxy-κC2}-9-(4-tert-butyl-2-pyridinyl-κN)carbazole-2,1-diyl-κC1)platinum(II) (abbreviated as PtON-TBBI). These compounds exhibit blue phosphorescence, with peak emission wavelengths in the 450-520 nm range. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium can also be used.

[0156] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]), (acetylacetonato)bis[5-methyl-6- Organometallic iridium complexes with a pyrimidine skeleton, such as (2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac)]) and (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2(acac)]), organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me)2(acac)]) and (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr)2(acac)]), and tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato-N,C 2’) iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)), {2- (Methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6)2(mbfpypy-iPr-d4)), [2-d3-methyl Ir(ppy)2(mbfpypy-d3) and Ir(ppy)2(mbfpypy-d3) are bis[2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) compounds. ) (abbreviation: Ir(ppy)2(mdppy)), [2-(4-d3-methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d3)2(mdppy-d3)]), [2-methyl-(2-pyridinyl-κN)benzofuro[2,In addition to organometallic iridium complexes with a pyridine skeleton, such as [2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as [Ir(ppy)2(mbfpypy)]), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium (abbreviated as [Ir(ppy)2(mdppy)]), and tris{2-[5-(methyl-d3)-4-phenyl-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviated as Ir(5m4dppy-d3)3), we have also developed organometallic iridium complexes with a pyridine skeleton, such as [2-{1-(5-tert-butylbiphenyl-2-yl)-4-[3-tert-butyl-5-(4-phenyl-2-pyridinyl-κN] )phenyl-κC6]-2-benzimidazolyl-κN3}-4,6-di-tert-butylphenolato-κO)platinum(II) (abbreviation: Pt(tBudppymmtBubiz-tBubp)), [2-(4-(3,5-di-tert-butylphenyl)-6-{3-[4-(5'-tert-butyl[1,1':3',1''-terphenyl]-2'-yl)-2-pyridinyl-κN]phenyl-κC2}-2-pyridinyl-κN)phenolato-κO]platinum(II) (abbreviation: Pt(4tButpppypyp-mmtBup)), and rare earth metal complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)3(Phen)]). These compounds exhibit phosphorescence with a predominantly green hue, with emission peaks in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes with a pyrimidine skeleton are particularly preferred because they are remarkably reliable and offer excellent luminous efficiency. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium atoms can also be used.

[0157] and organometallic iridium complexes having a pyrimidine skeleton, such as (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm)2(dpm)]), and bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(d1npm)2(dpm)]). Organometallic iridium complexes with a pyrazine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr)2(acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr)2(dpm)]), and (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]), tris(1-phenylisoquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(piq)3]), bis(1-phenylisoquinolinato-N,C 2’) iridium(III) acetylacetonate (abbreviated as [Ir(piq)2(acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), and (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). In addition to iridium complexes, platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: PtOEP) and rare earth metal complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)3(Phen)]) and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA)3(Phen)]) are examples of iridium complexes. These compounds exhibit red phosphorescence with peak emission in the wavelength range from 600 nm to 700 nm. Organometallic iridium complexes with a pyrazine skeleton also exhibit excellent red chromaticity. Compounds in which some of the hydrogen atoms in these compounds are replaced with deuterium atoms can also be used.

[0158] In one embodiment of the present invention, the use of a deuterated compound as the luminescent center substance improves luminous efficiency, and therefore the luminescent center substance is preferably a deuterated material.

[0159] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0160] TADF materials include fullerene and its derivatives, acridine and its derivatives, eosin derivatives, etc. Also available are metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of the metal-containing porphyrin include protoporphyrin-tin fluoride complex (SnF2(Proto IX)), mesoporphyrin-tin fluoride complex (SnF2(Meso IX)), hematoporphyrin-tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF2(Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride complex (SnF2(Etio I)), and octaethylporphyrin-platinum chloride complex (PtCl2OEP), all of which are shown in the following structural formulas.

[0161] [ka]

[0162] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10'H-spiro[acridin-9,9'-anthracene]-10'-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. The pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazol-3-yl)-9H-carbazole skeleton. Substances in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded are particularly preferred because the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both enhanced, thereby reducing the energy difference between the lowest singlet excitation level (S1 level) and the lowest triplet excitation level (T1 level), thereby enabling efficient thermally activated delayed fluorescence. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. The π-electron-rich skeleton may be, for example, an aromatic amine skeleton or a phenazine skeleton. Examples of usable π-electron-deficient skeletons include a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, etc. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of a π-electron-deficient heteroaromatic ring and a π-electron-rich heteroaromatic ring.

[0163] [ka]

[0164] In addition, TADF materials that are in thermal equilibrium between the singlet excited state and the triplet excited state may also be used. Such TADF materials have a shorter emission lifetime (excitation lifetime), which can suppress efficiency decline in the high brightness range of light-emitting devices. Specific examples include materials with the molecular structure shown below.

[0165] [ka]

[0166] TADF materials are materials with a small difference between the S1 and T1 levels, and have the ability to convert triplet excitation energy to singlet excitation energy through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) using a small amount of thermal energy, allowing for efficient generation of a singlet excited state. Triplet excitation energy can also be converted into light emission.

[0167] Furthermore, exciplexes (also known as exciplexes), which form an excited state with two types of substances, have an extremely small difference between the S1 and T1 levels and function as TADF materials that can convert triplet excitation energy into singlet excitation energy.

[0168] Note that a phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an indicator of the T1 level. For a TADF material, when a tangent line is drawn at the base of the short wavelength side of the fluorescence spectrum and the energy of the wavelength of the extrapolated line is defined as the S1 level, and a tangent line is drawn at the base of the short wavelength side of the phosphorescence spectrum and the energy of the wavelength of the extrapolated line is defined as the T1 level, the difference between the S1 level and the T1 level is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0169] When a TADF material is used as a light-emitting material, the S1 level of the host material is preferably higher than the S1 level of the TADF material, and the T1 level of the host material is preferably higher than the T1 level of the TADF material.

[0170] The host material of the light-emitting layer is a first host material and a second host material, and the two materials form an exciplex. The case where the first host material and the second host material form an exciplex has been described in detail above, and therefore a repetitive description will be omitted. In the case where the light-emitting layer does not have such a structure, various carrier transport materials such as an organic compound having an electron transport property and / or an organic compound having a hole transport property can be used as the host material.

[0171] The organic compound having hole transport properties is preferably an organic compound having an amine skeleton, a π-electron-rich heteroaromatic ring, etc. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton, and specifically preferably a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to one of these rings.

[0172] Such a substance having hole-transporting properties preferably has a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, the substance may be an aromatic amine having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, an aromatic monoamine having a naphthalene ring, or an aromatic monoamine in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group. It is preferable that the substance having hole-transporting properties is an organic compound having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of a light-emitting device with a long lifetime.

[0173] As such an organic compound, for example, the following organic compounds are preferable: 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-4,4'-diaminobiphenyl (abbreviation: TPD), N,N'-bis(9,9'-spirobi[9H-fluoren]-2-yl)-N,N'-diphenyl-4,4'-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3 ... mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviated as PCBANB), )triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), compounds with an aromatic amine skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl ( abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3,9-bis(9-phenyl-9H-carbazole-3-yl)-9H-carbazole (abbreviation: PCCzPC), 9-(biphenyl-4-yl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: PCCzBP), 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-Bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3, 3'-Bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H ,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-Bis(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi-9H-fluoren-1-amine, 9-[3-(triphenylsilyl)phenyl]-3,Compounds with a carbazole skeleton, such as 9'-bi-9H-carbazole (abbreviation: PSiCzCz) and 9'-[3-(triphenylsilyl)phenyl]-9'H-9,3':6',9''-tercarbazole (abbreviation: PSiCzGI), 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), and 2,8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-I) Examples of suitable compounds include compounds having a thiophene skeleton, such as 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. The organic compounds listed as examples of materials having hole transport properties for the hole transport layer can also be used.

[0174] The organic compound having electron transport properties is preferably an organic compound having a π-electron-deficient heteroaromatic ring. Examples of the organic compound having a π-electron-deficient heteroaromatic ring include an organic compound having an azole skeleton, an organic compound having a pyridine skeleton, an organic compound having a diazine skeleton, and an organic compound having a triazine skeleton.

[0175] Among these, organic compounds containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reduced driving voltage. In addition, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because of their high acceptor properties and high reliability.

[0176] As the organic compound having a π-electron-deficient heteroaromatic ring, for example, the following organic compounds are preferable: 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOS), and other organic compounds with an azole skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35 DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline Organic compounds containing heteroaromatic rings with a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl phenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviated as 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9mDBtBPNf pr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviated as 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviated as 4,6mPnP2Pm), 4,6-bis[3-(dibenzothiophen-4-yl)phenyl]pyrimidine (abbreviated as 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviated as 4,6mCzP2Pm), 9,9'-[pyrimidinyl benzofuro[3,2-d]pyrimidine (abbreviated as 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviated as 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)(biphenyl-3-yl)]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P -Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviated as 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviated as 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviated as 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]pyrimidine [4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm), 2,2'-(2,2'-bipyridine-6,6'-diyl)bis(4-phenylbenzo[h ]quinazoline) (abbreviation: 6,6'(P-Bqn)2BPy), organic compounds with a diazine skeleton such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), and 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-Diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]- 4,6-Diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmP PPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: m TpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviated as PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviated as mBP-TPDBfTzn), 2-[4-(2-naphthalenyl)phenyl]-4-phenyl-6-spiro[9H-fluorene-9,9'-[9H]xanthene]-4-yl-1,3,5-triazine (abbreviation: βNP-SFx(4)Tzn), 9,9'-{6-[3-(triphenylsilyl)phenyl]-1,3,5-triazine-2,4-diyl}bis(9H-carbazole) (abbreviation: SiTrzCz2), 2-phenyl-4,6-bis[3-(triphenylsilyl)phenyl]-1,3,5-triazine (abbreviation: mSiTrz), 11-[4-(biphenyl [4,6-Diphenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-(biphenyl-3-yl)indolo[2,3-a]carbazole (abbreviation: BP-mBPIcz(II)Tzn), 3-{3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]phenyl}-9-phenyl-9H-carbazo mPCPDBfTzn), 9,9'-[6-(biphenyl-4-yl)-2-phenyl-1,3,5-triazine-4,3''-diyl]bis(9H-carbazole) (Cz-pmCzBPTzn), 3-phenyl-9-[4-phenyl-6-(9-phenyl-3-dibenzofuranyl)-1,3,5-triazin-2-yl]-9H-carbazole (Cz-pmCzBPTzn), Examples of suitable organic compounds include organic compounds containing a heteroaromatic ring with a triazine skeleton, such as 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzothienyl]-2-phenyl-9H-carbazole (abbreviated as PCzDBtTzn), 9-[4-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzothienyl]-2-phenyl-9H-carbazole (abbreviated as PCzDBtTzn), and 2,4,6-tris(2-pyridyl)-1,3,5-triazine (abbreviated as 2Py3Tzn). Organic compounds containing a heteroaromatic ring with a diazine skeleton, organic compounds containing a heteroaromatic ring with a pyridine skeleton, and organic compounds containing a heteroaromatic ring with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0177] When a fluorescent substance is used as the emission center substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as a host material for a fluorescent substance makes it possible to realize an emission layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton to be used as a host material, a diphenylanthracene skeleton, particularly a 9,10-diphenylanthracene skeleton, is preferred due to its chemical stability. Furthermore, host materials having a carbazole skeleton are preferred because of their enhanced hole injection and transport properties. However, host materials containing a benzocarbazole skeleton, in which a benzene ring is further condensed to the carbazole skeleton, are even more preferred because their HOMO level is approximately 0.1 eV higher than that of host materials having a carbazole skeleton, making it easier for holes to enter. In particular, host materials containing a dibenzocarbazole skeleton are preferred because their HOMO level is approximately 0.1 eV higher than that of host materials having a carbazole skeleton, making it easier for holes to enter, as well as providing excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, from the viewpoint of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'- 9-(1-naphthyl)-10-(4-(2-naphthyl)phenyl)anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0178] The host material may be a mixture of multiple substances, and when a mixture of host materials is used, it is preferable to mix a material having electron-transporting properties with a material having hole-transporting properties. By mixing a material having electron-transporting properties with a material having hole-transporting properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the material having hole-transporting properties to the material having electron-transporting properties may be 1:19 to 19:1 (material having hole-transporting properties:material having electron-transporting properties).

[0179] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0180] The first electron-transporting layer 114_1 is a layer containing a substance having an electron-transporting property. The substance having an electron-transporting property is a material having an electron mobility of 1×10 at a square root of an electric field strength [V / cm] of 600. -7 cm 2 / Vs or more, preferably 1×10 -6 cm 2 / Vs or higher is preferred. Note that other substances can be used as long as they have a higher electron transport property than hole transport property. Note that the above substance is preferably an organic compound having a π-electron-deficient heteroaromatic ring. As the organic compound having a π-electron-deficient heteroaromatic ring, for example, one or more of an organic compound having a heteroaromatic ring with an azole skeleton, an organic compound having a heteroaromatic ring with a pyridine skeleton, an organic compound having a heteroaromatic ring with a diazine skeleton, and an organic compound having a heteroaromatic ring with a triazine skeleton are preferred, and an organic compound having a heteroaromatic ring with a triazine skeleton is particularly preferred.

[0181] The organic compounds having electron transport properties that can be used in the first electron-transport layer 114_1 can be the same as the organic compounds that can be used as the organic compounds having electron transport properties of the host materials in the first light-emitting layer 113_1 and the second light-emitting layer 113_2. Among them, organic compounds containing a heteroaromatic ring with a diazine skeleton, an organic compound containing a heteroaromatic ring with a pyridine skeleton, and an organic compound containing a heteroaromatic ring with a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and an organic compound containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reducing driving voltage.

[0182] As described above, the second electron-transporting layer 114_2 is a layer including the first organic compound having a triazine skeleton, and the details thereof have already been described and will not be described again.

[0183] Note that the first electron-transport layer 114_1 preferably contains an organic compound having a triazine skeleton in order to reduce power consumption. In particular, it is preferable that the second electron-transport layer 114_2 contains the same organic compound having a triazine skeleton as the first organic compound having a triazine skeleton contained in the second electron-transport layer 114_2, because this prevents the manufacturing equipment from becoming complicated and is advantageous in terms of raw material procurement costs.

[0184] Alternatively, the first electron-transporting layer 114_1 may contain an organic compound that does not contain a triazine skeleton, which facilitates control of carrier transport properties and enables provision of a light-emitting device with better characteristics. The organic compound that does not contain a triazine skeleton is preferably an organic compound that contains a heteroaromatic ring having a pyridine skeleton or an organic compound that contains a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton.

[0185] The intermediate layer 116 is a layer including a second organic compound having a phenanthroline skeleton. As shown in FIG. 1A, the intermediate layer 116 preferably includes a first layer 119 including the second organic compound having a phenanthroline skeleton. The intermediate layer 116 also preferably includes a second layer 117 including a ninth organic compound having hole-transporting properties and a substance having acceptor properties. The second layer 117 is located closer to the second electrode 102 than the first layer 119. The intermediate layer 116 may also include a third layer 118 between the first layer 119 and the second layer 117.

[0186] The details of the first layer have been described above, so a repeated description will be omitted.

[0187] The first layer 119 may further include an organic compound having electron-transporting properties. Examples of organic compounds having electron-transporting properties that can be used for the organic compound include those that can be used as the organic compounds having electron-transporting properties of the host materials in the first light-emitting layer 113_1 and the second light-emitting layer 113_2. Furthermore, it is preferable to use an organic compound having two or more heteroaromatic rings bonded to or condensed with each other, and the two or more heteroaromatic rings having three or more heteroatoms in total, because this improves the resistance to photolithography and suppresses an increase in driving voltage.

[0188] The first layer 119 may have a stacked structure of a layer containing an organic compound and a layer having a metal or a metal compound located closer to the cathode than the layer containing the organic compound, or may be a mixed layer of an organic compound and a metal or a metal compound. A mixed layer is preferable because it requires fewer deposition chambers and reduces manufacturing costs, and also contributes to improving the stability of the light-emitting device.

[0189] When an organic compound and a metal or metal compound are mixed, the distribution of the organic compound and the distribution of the metal or metal compound show roughly the same tendency when the first layer 119 is analyzed in the film thickness direction. That is, when the distribution of the organic compound is constant, the distribution of the metal or metal compound is also roughly constant. In the case of a laminated structure of a layer containing an organic compound and a layer having a metal or metal compound, the metal or metal compound may be detected in regions other than the layer having the metal or metal compound due to diffusion from the layer having the metal or metal compound, but since the distribution shows a different distribution from the distribution of the organic compound, the analysis results can be distinguished between diffusion and mixing.

[0190] The second layer 117 preferably contains a ninth organic compound having a hole-transporting property. The second layer 117 preferably further contains a substance exhibiting an acceptor property, and the substance exhibiting an acceptor property is preferably an organic compound exhibiting an acceptor property to the ninth organic compound.

[0191] When the second layer 117 contains a ninth organic compound and a substance that exhibits acceptor properties for the ninth organic compound, holes are generated by charge separation, and when a voltage is applied between the first electrode 101 and the second electrode 102, the holes are injected into the second light-emitting unit 502 on the cathode side via the ninth organic compound. Thus, the light-emitting device 130 of one embodiment of the present invention can be a light-emitting device with low driving voltage.

[0192] As the ninth organic compound having hole transport properties, various organic compounds can be used, such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). -6 cm 2 The ninth organic compound is preferably an organic compound having a hole mobility of 1 / Vs or more. The ninth organic compound is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. The fused aromatic hydrocarbon ring is preferably an anthracene ring, a naphthalene ring, or the like. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton, and more preferably a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the carbazole ring, a dibenzothiophene ring, or the like.

[0193] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with long lifetimes.

[0194] Specifically, as the organic compound having the hole-transporting property as described above, the organic compounds listed as the organic compounds having the hole-transporting property that can be used in the hole injection layer 111 can be similarly used.

[0195] As the substance having acceptor properties, for example, the substances exemplified as organic compounds having acceptor properties that can be used in the hole-injection layer 111 can be similarly used. In particular, organic compounds having at least one of a halogen group and a cyano group are preferred, and organic compounds having at least one of a fluorine group and a cyano group are more preferred. It is more preferred that the organic compound contains four or more halogen groups (fluorine) and cyano groups in total. Examples of organic compounds having at least one of a halogen group and a cyano group include α,α',α''-1,2,3-cyclopropane triylidene tris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropane triylidene tris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropane triylidene tris[2,3,4,5,6-pentafluorobenzeneacetonitrile].

[0196] Note that the substance having an acceptor property preferably has an electron-accepting property to the ninth organic compound having a hole-transporting property. When the substance having an acceptor property has an electron-accepting property to the ninth organic compound, charge separation occurs, and the second layer 117 can function as a charge-generating layer and as a tandem intermediate layer. In addition, it is preferable that a signal observed by electron spin resonance is observed in the second layer 117. For example, the spin density resulting from a signal observed around a g value of 2.00 is 1×10 17 spins / cm 3 More than 1×10 is preferable. 18 spins / cm 3 More than 1×10 is preferable. 19 spins / cm 3 The above is even more preferable.

[0197] The third layer 118 contains a substance having an electron transporting property, and has functions such as preventing interaction between the first layer 119 and the second layer 117, smoothing the transfer of electrons to reduce the driving voltage, and reducing the interaction between the first layer 119 and the second layer 117 to improve reliability.

[0198] The LUMO level of the substance having electron-transporting properties contained in the third layer 118 is preferably between the LUMO level of the substance having acceptor properties in the second layer 117 and the LUMO level of the organic compound contained in the layer in contact with the first layer 119 in the light-emitting unit on the anode side (the first electron-transporting layer 114_1 in the first light-emitting unit 501 in Figure 1(A)).

[0199] The specific energy level of the LUMO level of the substance having an electron-transporting property used in the third layer 118 is preferably −5.0 eV or higher, preferably −5.0 eV or higher to −3.0 eV or lower, more preferably −4.30 eV or higher to −3.00 eV or lower, and still more preferably −4.30 eV or higher to −3.30 eV or lower, in order to suppress an increase in driving voltage. Note that the substance having an electron-transporting property used in the third layer 118 is preferably a phthalocyanine-based material or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0200] Specific examples of the substance having an electron transport property that can be used for the third layer 118 include diquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA), 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2′,3′-c]phenazine (abbreviation: HATNA-F6), perylene tetracarboxylic acid derivatives such as 3,4,9,10-perylene tetracarboxylic diimide (abbreviation: PTCDI) and 3,4,9,10-perylene tetracarboxylic-bis-benzimidazole (abbreviation: PTCBI), (C60-Ih)[5,6]fullerene (abbreviation: C60), and (C70-D5h)[5,6]fullerene (abbreviation: C70). Compounds having a heterophane skeleton, which is a cyclophane skeleton containing a heterocycle, can also be used, including phthalocyanine compounds such as phthalocyanine (abbreviated as HPc). Metal phthalocyanines containing copper, zinc, cobalt, iron, chromium, nickel, etc., such as copper phthalocyanine (abbreviated as CuPc), zinc phthalocyanine (abbreviated as ZnPc), cobalt phthalocyanine (abbreviated as CoPc), iron phthalocyanine (abbreviated as FePc), tin phthalocyanine (abbreviated as SnPc), tin oxide phthalocyanine (abbreviated as SnOPc), titanium oxide phthalocyanine (abbreviated as TiOPc), and vanadium oxide phthalocyanine (abbreviated as VOPc), as well as derivatives thereof, can also be used. Also preferred are metal complexes of the phthalocyanine series, such as copper phthalocyanine or zinc phthalocyanine, or 2,3,8,9,14,15-hexafluorodiquinoxalino[2,3-a:2',3'-c]phenazine.

[0201] The thickness of the third layer 118 is preferably 1 nm or more and 10 nm or less, and more preferably 2 nm or more and 5 nm or less.

[0202] Since the second layer 117 in the intermediate layer 116 functions as a hole injection layer, the second light-emitting unit 502 does not have a hole injection layer, but the second light-emitting unit 502 may have a hole injection layer.

[0203] The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a laminated structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof, each having a low work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys containing these elements (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these elements. Specific examples include alkali metals, alkaline earth metals, rare earth metals, such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF2), 8-hydroxyquinolinato-lithium (abbreviated as Liq), and ytterbium (Yb), as well as compounds or complexes thereof, and electrides. Examples of electrides include a substance in which a high concentration of electrons is added to a mixed oxide of calcium and aluminum. Two or more of these may be mixed and used. When the second electrode 102 has a layered structure, materials with good conductivity can be used for the components other than the cathode, regardless of their work function.

[0204] Note that the second electron-transport layer 114_2 is preferably in contact with the second electrode 102. When the second electron-transport layer 114_2 is in contact with the second electrode 102, a light-emitting device having excellent electron injection and electron transport properties, low driving voltage, and low power consumption can be provided.

[0205] When the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0206] These conductive materials can be formed into films by dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating, etc. Alternatively, they may be formed by wet methods using a sol-gel method, or by wet methods using a paste of a metal material.

[0207] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0208] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0209] FIG. 1C shows two adjacent light-emitting devices (light-emitting device 130a and light-emitting device 130b) included in a display device of one embodiment of the present invention.

[0210] The light-emitting device 130a includes an organic compound layer 103a between a first electrode 101a and a second electrode 102 on an insulating layer 175. The organic compound layer 103a includes a first light-emitting unit 501a and a second light-emitting unit 502a stacked with an intermediate layer 116a sandwiched therebetween. While FIG. 1C shows an example in which two light-emitting units are stacked, a structure in which three or more light-emitting units are stacked may also be used. The first light-emitting unit 501a includes a hole-injection layer 111a, a first hole-transport layer 112a_1, a first light-emitting layer 113a_1, and a first electron-transport layer 114a_1. The intermediate layer 116a includes a second layer 117a, a third layer 118a, and a first layer 119a. The third layer 118a is optional. The second light-emitting unit 502a includes a second hole-transporting layer 112a_2, a second light-emitting layer 113a_2, and a second electron-transporting layer 114a_2.

[0211] The light-emitting device 130b includes an organic compound layer 103b between a first electrode 101b and a second electrode 102 on an insulating layer 175. The organic compound layer 103b includes a first light-emitting unit 501b and a second light-emitting unit 502b stacked with an intermediate layer 116b sandwiched therebetween. While FIG. 1C shows an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked may also be used. The first light-emitting unit 501b includes a hole-injection layer 111b, a first hole-transport layer 112b_1, a first light-emitting layer 113b_1, and a first electron-transport layer 114b_1. The intermediate layer 116b includes a second layer 117b, a third layer 118b, and a first layer 119b. The third layer 118b is optional. The second light-emitting unit 502b includes a second hole-transporting layer 112b_2, a second light-emitting layer 113b_2, and a second electron-transporting layer 114b_2.

[0212] The second electron-transporting layer 114a_2 and the second electron-transporting layer 114b_2 are layers containing a first organic compound having a triazine skeleton, and the first layer 119a and the first layer 119b are layers containing a second organic compound having a phenanthroline skeleton.

[0213] The first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are preferably light-emitting layers that emit light of similar colors. Furthermore, the luminescent center substances contained in each layer are preferably compounds whose maximum peak wavelengths in their emission spectra differ by 30 nm or less, more preferably by 20 nm or less, and even more preferably by 10 nm or less, and it is even more preferable that the luminescent center substances contained in each layer are the same. The first light-emitting layer 113b_1 and the second light-emitting layer 113b_2 are preferably light-emitting layers that emit light of similar colors. Furthermore, the luminescent center substances contained in each layer are preferably compounds whose maximum peak wavelengths in their emission spectra differ by 30 nm or less, more preferably by 20 nm or less, and even more preferably by 10 nm or less, and it is even more preferable that the luminescent center substances contained in each layer are the same. Furthermore, the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are preferably made of the same material. One or preferably both of the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 preferably has the above-described structure of the light-emitting layer according to one embodiment of the present invention.

[0214] Preferably, the first light-emitting layer 113a_1 and the first light-emitting layer 113b_1 are separated, and the second light-emitting layer 113a_2 and the second light-emitting layer 113b_2 are separated. Preferably, the emission colors of the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are different from the emission colors of the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2. Preferably, the luminescent center substance contained in the first light-emitting layer 113a_1 is different from the luminescent center substance contained in the first light-emitting layer 113b_1, and the luminescent center substance contained in the second light-emitting layer 113a_2 is different from the luminescent center substance contained in the second light-emitting layer 113b_2. Preferably, the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2 are made of the same material. One or preferably both of the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2 preferably has the above-described structure of the light-emitting layer according to one embodiment of the present invention.

[0215] The hole injection layer 111a and the hole injection layer 111b, the first hole transport layer 112a_1 and the first hole transport layer 112b_1, the first electron transport layer 114a_1 and the first electron transport layer 114b_1, the intermediate layer 116a and the intermediate layer 116b (the second layer 117a and the second layer 117b, the third layer 118a and the third layer 118b, and the first layer 119a and the first layer 119b), the second hole transport layer 112a_2 and the second hole transport layer 112b_2, and the second electron transport layer 114a_2 and the second electron transport layer 114b_2 may be continuous layers or may be separate layers in the light-emitting device 130a and the light-emitting device 130b. Being continuous layers improves productivity and enables light-emitting devices to be produced inexpensively. The separate layers for each light-emitting device allow the use of materials suited to the emission color, thereby enabling the manufacture of light-emitting devices or display devices with excellent characteristics. In particular, the second electron-transporting layer 114a_2 and the second electron-transporting layer 114b_2 are preferably continuous layers, since this allows both the light-emitting device 130a and the light-emitting device 130b to have excellent characteristics.

[0216] Being a continuous layer means that the second electron transport layer 114a_2 and the second electron transport layer 114b_2 are layers made of the same material. That is, when the second electron transport layer 114a_2 and the second electron transport layer 114b_2 are layers made of the same material, both the light-emitting device 130a and the light-emitting device 130b can be light-emitting devices with excellent characteristics. Furthermore, it is more preferable that the second electron transport layer 114a_2 and the second electron transport layer 114b_2 are layers having similar structures, and it is even more preferable that they are layers having the same structure.

[0217] Furthermore, when the luminescent center substance contained in the first light-emitting layer 113a_1 is a different substance from the luminescent center substance contained in the first light-emitting layer 113b_1, and when the luminescent center substance contained in the second light-emitting layer 113a_2 is a different substance from the luminescent center substance contained in the second light-emitting layer 113b_2 (for example, when the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are blue fluorescent light-emitting layers and the first light-emitting layer 113b_1 and the second light-emitting layer 113b_2 are green phosphorescent light-emitting layers, or When the first and second light-emitting layers 113a_1 and 113a_2 are blue fluorescent light-emitting layers and the first and second light-emitting layers 113b_1 and 113b_2 are red phosphorescent light-emitting layers, or when the first and second light-emitting layers 113a_1 and 113a_2 are green phosphorescent light-emitting layers and the first and second light-emitting layers 113b_1 and 113b_2 are red phosphorescent light-emitting layers, the carrier balances of the light-emitting layers of the light-emitting devices 130a and 130b are different. Therefore, to maximize the performance of each of the light-emitting devices 130a and 130b, appropriate intermediate layers and electron-transporting layers must be selected and changed. However, by using a layer containing a first organic compound having a triazine skeleton as the second electron-transporting layer 114a_2 and the second electron-transporting layer 114b_2 and using a layer containing a second organic compound having a phenanthroline skeleton as the first layer 119a and the first layer 119b, it is possible to obtain the performance of both the light-emitting device 130a and the light-emitting device 130b even if the second electron-transporting layer 114a_2 and the second electron-transporting layer 114b_2 have the same structure. In other words, it is possible to achieve both improved productivity and improved performance. Note that the first layer 119a and the first layer 119b may have the same structure.

[0218] The continuous layer is a so-called common layer that is formed across both the light-emitting device 130a and the light-emitting device 130b.

[0219] FIG. 2(A) is a modified example of FIG. 1(C). Light-emitting device 130a and light-emitting device 130b1 emit light of different colors, and therefore have different optical path lengths between electrodes that can amplify light emission using microcavities. Therefore, in light-emitting device 130b1, the distance between the electrodes can be adjusted by increasing the thickness of light-emitting layers such as light-emitting layer 113b_11 and light-emitting layer 113b_21. Alternatively, the optical path length can be changed by thickening or adding a functional layer, such as hole-transport layer 112b_21.

[0220] FIG. 2B illustrates three adjacent light-emitting devices (light-emitting device 130a, light-emitting device 130b1, and light-emitting device 130c) included in a display device of one embodiment of the present invention.

[0221] The light-emitting device 130c includes an organic compound layer 103c between a first electrode 101c and a second electrode 102 on an insulating layer 175. The organic compound layer 103c includes a first light-emitting unit 501c and a second light-emitting unit 502c stacked with an intermediate layer 116c sandwiched therebetween. While FIG. 2B illustrates an example in which two light-emitting units are stacked, a configuration in which three or more light-emitting units are stacked may also be used. The first light-emitting unit 501c includes a hole injection layer 111c, a first hole transport layer 112c_1, a first light-emitting layer 113c_1, and a first electron transport layer 114c_1. The intermediate layer 116c includes a second layer 117c, a third layer 118c, and a first layer 119c. The third layer 118c is optional. The second light-emitting unit 502c includes a second hole-transporting layer 112c_2, a second light-emitting layer 113c_2, and a second electron-transporting layer 114c_2.

[0222] The light emitted from the light-emitting device 130c is assumed to have a shorter wavelength than the light-emitting devices 130a and 130b1. The inter-electrode distance of the light-emitting device 130c is adjusted by making the film thicknesses of the first light-emitting layer 113c_1 and the second light-emitting layer 113c_2 thinner than those of the other two light-emitting devices.

[0223] The second electron-transporting layer 114c_2 is a layer including a first organic compound having a triazine skeleton, and the first layer 119c is a layer including a second organic compound having a phenanthroline skeleton.

[0224] The first light-emitting layer 113c_1 and the second light-emitting layer 113c_2 are preferably light-emitting layers that emit light of similar colors. Furthermore, the luminescent center substances contained in each layer are preferably compounds whose difference in maximum peak wavelength in their emission spectra is 30 nm or less, more preferably 20 nm or less, and even more preferably 10 nm or less, and it is even more preferable that the luminescent center substances contained in each layer are the same. Furthermore, the first light-emitting layer 113c_1 and the second light-emitting layer 113c_2 are preferably made of the same material. Preferably, one or both of the first light-emitting layer 113c_1 and the second light-emitting layer 113c_2 have the light-emitting layer configuration of one embodiment of the present invention described above.

[0225] Preferably, the first light-emitting layer 113a_1 and the first light-emitting layer 113c_1 are separated, and the second light-emitting layer 113a_2 and the second light-emitting layer 113c_2 are separated. Preferably, the emission colors of the first light-emitting layer 113a_1 and the second light-emitting layer 113a_2 are different from the emission colors of the first light-emitting layer 113c_1 and the second light-emitting layer 113c_2. Preferably, the luminescent center substance contained in the first light-emitting layer 113a_1 is different from the luminescent center substance contained in the first light-emitting layer 113c_1, and the luminescent center substance contained in the second light-emitting layer 113a_2 is different from the luminescent center substance contained in the second light-emitting layer 113c_2.

[0226] In this example, the hole injection layer 111a and the hole injection layer 111c, the first hole transport layer 112a_1 and the first hole transport layer 112c_1, the first electron transport layer 114a_1 and the first electron transport layer 114c_1, the intermediate layer 116a and the intermediate layer 116c (the second layer 117a and the second layer 117c, the third layer 118a and the third layer 118c, and the first layer 119a and the first layer 119c), and the second hole transport layer 112a_2 and the second hole transport layer 112c_2 are each independently separated in the light-emitting device 130a and the light-emitting device 130c, while the second electron transport layer 114a_2 and the second electron transport layer 114c_2 are a continuous layer. In this way, a single light-emitting device may include both continuous and separated layers. This allows a light-emitting device or display device with a good balance between productivity and performance to be manufactured. In particular, the second electron-transporting layer 114a_2 and the second electron-transporting layer 114c_2 are preferably formed as a continuous layer, which allows both the light-emitting device 130a and the light-emitting device 130c to have good performance.

[0227] For example, in a three-color light-emitting device having two light-emitting devices with fluorescent luminescent center substances and one light-emitting device with phosphorescent luminescent center substances, it is preferable that the carrier transport layer in the light-emitting device with fluorescent luminescent center substances be formed as a continuous layer, and that the carrier transport layer in the light-emitting device with phosphorescent luminescent center substances be formed as a layer separated from the light-emitting devices emitting other luminescent colors. Alternatively, in a three-color light-emitting device having two light-emitting devices with phosphorescent luminescent center substances and one light-emitting device with fluorescent luminescent center substances, it is preferable that the carrier transport layer in the light-emitting device with phosphorescent luminescent center substances be formed as a continuous layer, and that the carrier transport layer in the light-emitting device with fluorescent luminescent center substances be formed as a layer separated from the light-emitting devices emitting other luminescent colors.

[0228] A light-emitting device of the present invention having such a structure can be a light-emitting device with high current efficiency, low energy loss, and favorable characteristics. A display device according to one embodiment of the present invention using such a light-emitting device can be a display device with low power consumption, high reliability, and high luminance, and thus has favorable visibility. This embodiment can be freely combined with other embodiments.

[0229] (Embodiment 2) In this embodiment, a display device manufactured using the light-emitting device described in Embodiment 1 will be described with reference to FIG. 3. FIG. 3A is a top view showing the display device, and FIG. 3B is a cross-sectional view taken along lines AB and CD in FIG. 3A. This display device includes a driver circuit section (source line driver circuit) 601, a pixel section 602, and a driver circuit section (gate line driver circuit) 603, all of which are shown by dotted lines, to control light emission from the light-emitting device. 604 is a sealing substrate, 605 is a sealant, and the inside surrounded by the sealant 605 is a space 607.

[0230] The routing wiring 608 is wiring for transmitting signals input to the source line driver circuit 601 and the gate line driver circuit 603, and receives video signals, clock signals, start signals, reset signals, etc. from an FPC (flexible print circuit) 609, which serves as an external input terminal. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to this FPC. In this specification, the display device includes not only the display device itself, but also a state in which an FPC or PWB is attached to it.

[0231] Next, the cross-sectional structure will be described with reference to Fig. 3(B) . A driver circuit portion and a pixel portion are formed on an element substrate 610, but here, a source line driver circuit 601, which is the driver circuit portion, and one pixel in a pixel portion 602 are shown.

[0232] The element substrate 610 may be made of a substrate made of glass, quartz, organic resin, metal, alloy, semiconductor, or a plastic substrate made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, or the like.

[0233] The structure of the transistors used in the pixels and the driver circuits is not particularly limited. For example, they may be inverted staggered transistors or staggered transistors. Furthermore, they may be top-gate or bottom-gate transistors. The semiconductor material used for the transistors is not particularly limited, and examples thereof include silicon, germanium, silicon carbide, and gallium nitride. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.

[0234] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0235] Here, it is preferable to use an oxide semiconductor for the transistors provided in the pixel and the driver circuit, as well as for semiconductor devices such as transistors used in touch sensors, which will be described later. In particular, it is preferable to use an oxide semiconductor having a wider band gap than silicon. By using an oxide semiconductor having a wider band gap than silicon, the current in the off state of the transistor can be reduced.

[0236] The oxide semiconductor preferably contains at least indium (In) or zinc (Zn), and more preferably contains an oxide represented by In-M-Zn oxide (M is a metal such as Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce, or Hf).

[0237] In particular, it is preferable to use, as the semiconductor layer, an oxide semiconductor film having a plurality of crystal parts whose c-axes are oriented perpendicular to the surface on which the semiconductor layer is formed or the top surface of the semiconductor layer and which does not have grain boundaries between adjacent crystal parts.

[0238] By using such a material for the semiconductor layer, fluctuations in electrical characteristics are suppressed, and a highly reliable transistor can be realized.

[0239] Furthermore, a transistor having the above-described semiconductor layer can retain charge stored in a capacitor through the transistor for a long period of time due to its low off-state current. By applying such a transistor to a pixel, it is possible to stop the driver circuit while maintaining the gray level of an image displayed in each display region. As a result, an electronic device with extremely low power consumption can be realized.

[0240] To stabilize the characteristics of the transistor, it is preferable to provide an underlayer film. The underlayer film can be formed as a single layer or a multilayer using an inorganic insulating film such as a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a silicon nitride oxide film. The underlayer film can be formed by a sputtering method, a CVD (Chemical Vapor Deposition) method (such as a plasma CVD method, a thermal CVD method, or a MOCVD (Metal Organic CVD) method), an ALD (Atomic Layer Deposition) method, a coating method, a printing method, or the like. Note that the underlayer film need not be provided if it is not necessary.

[0241] Note that FET 623 represents one of the transistors formed in the drive circuit section 601. The drive circuit may be formed of various CMOS circuits, PMOS circuits, or NMOS circuits. In addition, although this embodiment shows a driver-integrated type in which the drive circuit is formed on a substrate, this is not necessarily required, and the drive circuit may also be formed externally rather than on the substrate.

[0242] Furthermore, the pixel portion 602 is formed by a plurality of pixels each including a switching FET 611, a current control FET 612, and a first electrode 613 electrically connected to the drain of the FET, but is not limited to this, and the pixel portion may be formed by combining three or more FETs and a capacitive element.

[0243] An insulator 614 is formed to cover an end portion of the first electrode 613. Here, the insulator 614 can be formed using a positive photosensitive acrylic resin film.

[0244] Furthermore, in order to improve the coverage of an organic compound layer or the like to be formed later, a curved surface having a curvature is formed at the upper or lower end of the insulator 614. For example, when a positive photosensitive acrylic resin is used as the material for the insulator 614, it is preferable that only the upper end of the insulator 614 has a curved surface having a curvature radius (0.2 μm to 3 μm). Furthermore, either a negative photosensitive resin or a positive photosensitive resin can be used as the insulator 614.

[0245] An organic compound layer 616 and a second electrode 617 are formed on the first electrode 613. The first electrode 613, which functions as an anode, is preferably made of a material with a large work function. For example, a single-layer film such as an ITO film, an indium tin oxide film containing silicon, an indium oxide film containing 2 to 20 wt % zinc oxide, a titanium nitride film, a chromium film, a tungsten film, a Zn film, or a Pt film can be used. It is also possible to use a laminated structure of a titanium nitride film and a film mainly composed of aluminum, or a three-layer structure of a titanium nitride film, a film mainly composed of aluminum, and a titanium nitride film. The laminated structure provides low wiring resistance, good ohmic contact, and the first electrode 613 can function as an anode.

[0246] The organic compound layer 616 is formed by various methods such as a vapor deposition method using a vapor deposition mask, an inkjet method, or a spin coating method. The organic compound layer 616 includes the structure described in Embodiment 1. Other materials constituting the organic compound layer 616 may be low-molecular-weight compounds or high-molecular-weight compounds (including oligomers and dendrimers).

[0247] Furthermore, the second electrode 617, which is formed on the organic compound layer 616 and functions as a cathode, is preferably made of a material with a small work function (such as Al, Mg, Li, or Ca, or alloys and compounds thereof (MgAg, MgIn, AlLi, etc.)). When light generated in the organic compound layer 616 is to be transmitted through the second electrode 617, the second electrode 617 is preferably made of a laminate of a thin metal thin film and a transparent conductive film (such as ITO, indium oxide containing 2 to 20 wt % zinc oxide, indium tin oxide containing silicon, or zinc oxide (ZnO)).

[0248] Note that a light-emitting device is formed with the first electrode 613, the organic compound layer 616, and the second electrode 617. The light-emitting device is the light-emitting device described in Embodiment 1. Note that a pixel portion is formed with a plurality of light-emitting devices, but the display device in this embodiment may include both the light-emitting device described in Embodiment 1 and light-emitting devices having other structures.

[0249] Furthermore, by bonding the sealing substrate 604 to the element substrate 610 with a sealant 605, a structure is formed in which a light-emitting device 618 is provided in a space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. The space 607 is filled with a filler, which may be filled with an inert gas (nitrogen, argon, etc.) or a sealant. A recess is formed in the sealing substrate and a desiccant is provided therein, which is a preferable configuration because it can suppress deterioration due to the influence of moisture.

[0250] It is preferable to use epoxy resin or glass frit for the sealing material 605. It is also desirable that these materials are as moisture and oxygen impermeable as possible. In addition, materials that can be used for the sealing substrate 604 include glass substrates, quartz substrates, and plastic substrates made of FRP (Fiber Reinforced Plastics), PVF (Polyvinyl Fluoride), polyester, acrylic resin, etc.

[0251] Although not shown in FIG. 3B, a protective film may be provided on the second electrode 617. The protective film may be formed of an organic resin film or an inorganic insulating film. The protective film may also be formed so as to cover the exposed portion of the sealing material 605. The protective film may also be provided so as to cover the surfaces and side surfaces of the pair of substrates, the exposed side surfaces of the sealing layer, the insulating layer, and the like.

[0252] The protective film can be made of a material that is impermeable to impurities such as water, and therefore can effectively prevent impurities such as water from diffusing from the outside to the inside.

[0253] The protective film may be made of an oxide, nitride, fluoride, sulfide, ternary compound, metal, polymer, or the like. For example, a material containing aluminum oxide, hafnium oxide, hafnium silicate, lanthanum oxide, silicon oxide, strontium titanate, tantalum oxide, titanium oxide, zinc oxide, niobium oxide, zirconium oxide, tin oxide, yttrium oxide, cerium oxide, scandium oxide, erbium oxide, vanadium oxide, indium oxide, or the like; a material containing aluminum nitride, hafnium nitride, silicon nitride, tantalum nitride, titanium nitride, niobium nitride, molybdenum nitride, zirconium nitride, or gallium nitride, or the like; a nitride containing titanium and aluminum, an oxide containing titanium and aluminum, an oxide containing aluminum and zinc, a sulfide containing manganese and zinc, a sulfide containing cerium and strontium, an oxide containing erbium and aluminum, or an oxide containing yttrium and zirconium, or the like.

[0254] The protective film is preferably formed using a film formation method that provides good step coverage. One such method is atomic layer deposition (ALD). It is preferable to use a material that can be formed using the ALD method for the protective film. By using the ALD method, it is possible to form a dense protective film with reduced defects such as cracks and pinholes, or with a uniform thickness. In addition, it is possible to reduce damage to the workpiece when forming the protective film.

[0255] For example, by forming a protective film using the ALD method, it is possible to form a uniform protective film with few defects on surfaces with complex uneven shapes, including the top, side, and back surfaces of a touch panel.

[0256] In this manner, a display device manufactured using the light-emitting device described in Embodiment 1 can be obtained.

[0257] The display device in this embodiment uses the light-emitting device described in Embodiment 1, and therefore, a display device with favorable characteristics can be obtained. Specifically, the light-emitting device described in Embodiment 1 has high emission efficiency, and therefore, a display device with low power consumption can be obtained. Furthermore, the light-emitting device described in Embodiment 1 has favorable reliability, and therefore, a display device with favorable reliability can be obtained. In addition, the light-emitting device described in Embodiment 1 can be a light-emitting device with favorable chromaticity and color purity, and therefore, a display device with favorable display quality can be obtained.

[0258] This embodiment mode can be freely combined with other embodiment modes.

[0259] (Embodiment 3) 4A and 4B, a display device is formed by forming a plurality of light-emitting devices 130 over an insulating layer 175. In this embodiment, a display device according to another embodiment of the present invention will be described in detail.

[0260] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0261] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0262] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel unit 177. In this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but combinations of sub-pixels of other colors may also be used. The number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors, R, G, B, and white (W), sub-pixels of four colors, R, G, B, and Y, and sub-pixels of R, G, B, and infrared (IR).

[0263] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0264] 4A shows an example in which sub-pixels of different colors are arranged side by side in the X direction, and sub-pixels of the same color are arranged side by side in the Y direction. Note that sub-pixels of different colors may also be arranged side by side in the Y direction, and sub-pixels of the same color may also be arranged side by side in the X direction.

[0265] A connection section 140 may be provided outside the pixel section 177, and a region 141 may also be provided. When the region 141 is provided, the region 141 is provided between the pixel section 177 and the connection section 140. When the region 141 is provided, an organic compound layer is provided in the region 141. Furthermore, a conductive layer 151C is provided in the connection section 140.

[0266] 4A shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0267] Fig. 4(B) is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 4(A). As shown in Fig. 4(B), the display device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layer 175, the insulating layer 174, and the insulating layer 173 have openings that reach the conductive layer 172, and a plug 176 is provided to fill the opening.

[0268] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. Preferably, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided between adjacent light-emitting devices 130.

[0269] Although multiple cross sections of the inorganic insulating layer 125 and the insulating layer 127 are shown in FIG. 4B, when the display device 100 is viewed from above, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are each connected into one.

[0270] 4(B) shows light emitting device 130R, light emitting device 130G, and light emitting device 130B. Light emitting device 130R, light emitting device 130G, and light emitting device 130B emit light of different colors. For example, light emitting device 130R can emit red light, light emitting device 130G can emit green light, and light emitting device 130B can emit blue light. Light emitting device 130R, light emitting device 130G, or light emitting device 130B may also emit other visible light or infrared light.

[0271] The display device of one embodiment of the present invention can be, for example, a top-emission type that emits light in the direction opposite to the substrate on which the light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0272] The light-emitting device 130R has a first electrode 101R (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103R during processing.

[0273] The light-emitting device 130G has a first electrode 101G (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an organic compound layer 103G on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103G during processing.

[0274] The light-emitting device 130B has the same configuration as that described in Embodiment 1. It includes a first electrode 101B (pixel electrode) including a conductive layer 151B and a conductive layer 152B, an organic compound layer 103B on the first electrode, a common layer 104 on the organic compound layer 103B, and a second electrode (common electrode) 102 on the common layer 104. The common layer 104 may or may not be provided, but is preferably provided because it can reduce damage to the organic compound layer 103B during processing. When the common layer 104 is provided, the stacked structure of the organic compound layer 103B and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1. When the common layer 104 is not provided, the organic compound layer 103B corresponds to the organic compound layer 103 in Embodiment 1.

[0275] The common layer 104 is preferably an electron transport layer. When the common layer 104 is an electron transport layer, the electron transport layer preferably has a laminated structure, and it is more preferable that the layer on the second electrode side is the common layer 104 and the layer on the light-emitting layer side is the organic compound layer 103.

[0276] The light emitting devices 130R and 130G are also light emitting devices fabricated through a photolithography process.

[0277] One of the pixel electrode and the common electrode of the light-emitting device 130 functions as an anode, and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0278] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-shaped layers for each light-emitting device or each emitted color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This makes it possible to prevent crosstalk and realize a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0279] The island-shaped organic compound layer 103 is formed by depositing an organic compound film and processing the organic compound film using a photolithography method.

[0280] The organic compound layer 103 is preferably provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the display device 100 compared to a configuration in which the end of the organic compound layer 103 is located inside the end of the pixel electrode. Furthermore, covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103 prevents the pixel electrode from coming into contact with the second electrode 102, thereby preventing short circuits in the light-emitting device 130.

[0281] In the display device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device preferably has a stacked-layer structure. For example, in the example shown in FIG. 4B, the first electrode of the light-emitting device 130 has a stacked-layer structure of a conductive layer 151 and a conductive layer 152.

[0282] For example, a metal material can be used for the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), neodymium (Nd), etc., and alloys containing appropriate combinations of these metals can also be used.

[0283] The conductive layer 152 can be formed using an oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0284] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0285] 5 to 10. Note that although the following manufacturing method describes a method for manufacturing a light-emitting device without using a metal mask, the light-emitting device or display device of one embodiment of the present invention may also be manufactured by a vapor deposition method using a typical metal mask.

[0286] [Production method example 1] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, a pulsed laser deposition (PLD) method, an ALD method, etc.

[0287] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) that constitute the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0288] Furthermore, when processing the thin films that constitute the display device, they can be processed using, for example, photolithography.

[0289] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed using immersion exposure techniques. Extreme ultraviolet (EUV) light or X-rays may also be used as light for exposure. An electron beam may also be used instead of light for exposure.

[0290] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0291] 5A, an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0292] The substrate may be a substrate having heat resistance at least sufficient to withstand subsequent heat treatment, such as a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, or an SOI substrate.

[0293] 5A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0294] 5A, a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, and a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, are formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed of, for example, a metal material. The conductive film 152f can be formed of, for example, an oxide containing one or more elements selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon.

[0295] 5A, a resist mask 191 is formed over the conductive film 152f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0296] 5B, for example, the conductive film 151f and the conductive film 152f are removed from regions that do not overlap with the resist mask 191. As a result, the conductive layer 151 and the conductive layer 152 are formed.

[0297] 5(C), the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, for example.

[0298] Next, as shown in FIG. 5(D), an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on conductive layer 152R, conductive layer 152G, conductive layer 152B, conductive layer 152C, and insulating layer 175.

[0299] The insulating film 156f can be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film, for example, a silicon oxynitride film.

[0300] Subsequently, as shown in FIG. 5(E), the insulating film 156f is processed to form an insulating layer 156R, an insulating layer 156G, an insulating layer 156B, and an insulating layer 156C.

[0301] 6(A), the organic compound film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Note that, as shown in FIG. 6(A), the organic compound film 103Rf is not formed on the conductive layer 152C.

[0302] Subsequently, as shown in FIG. 6(A), a sacrificial film 158Rf and a mask film 159Rf are formed.

[0303] By providing the sacrificial film 158Rf on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0304] The sacrificial film 158Rf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Rf, specifically, a film that has a large etching selectivity with respect to the organic compound film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the sacrificial film 158Rf.

[0305] The sacrificial film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature during the formation of the sacrificial film 158Rf and the mask film 159Rf is typically 100° C. to 200° C., preferably 100° C. to 150° C., and more preferably 100° C. to 120° C. The light-emitting device of one embodiment of the present invention includes the first organic compound, and therefore can provide a display device with good display quality even after a heating step at a higher temperature.

[0306] It is preferable to use a film that can be removed by wet etching or dry etching for the sacrificial film 158Rf and the mask film 159Rf.

[0307] It is preferable that the sacrificial film 158Rf formed on and in contact with the organic compound film 103Rf be formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, the ALD method (Atomic Layer Deposition method) or the vacuum evaporation method is more preferable than the sputtering method.

[0308] The sacrificial film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0309] The sacrificial film 158Rf and the mask film 159Rf can be made of metal materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, and tantalum, or alloy materials containing such metal materials. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the sacrificial film 158Rf and the mask film 159Rf is preferable because it can prevent the organic compound film 103Rf from being irradiated with ultraviolet rays during pattern exposure, thereby suppressing deterioration of the organic compound film 103Rf.

[0310] Furthermore, for the sacrificial film 158Rf and the mask film 159Rf, metal oxides such as In-Ga-Zn oxide, indium oxide, In-Zn oxide, In-Sn oxide, indium titanium oxide (In-Ti oxide), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0311] In addition, in the above metal oxide, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0312] The sacrificial film 158Rf and the mask film 159Rf are preferably made of a semiconductor material such as silicon or germanium, which has a high affinity with the semiconductor manufacturing process, or a compound containing the semiconductor material.

[0313] Moreover, various inorganic insulating films can be used for the sacrificial film 158Rf and the mask film 159Rf, respectively. In particular, an oxide insulating film is preferable because it has higher adhesion to the organic compound film 103Rf than a nitride insulating film.

[0314] 6(A), a resist mask 190R is formed. The resist mask 190R can be formed by applying a photosensitive material (photoresist) and then exposing and developing it.

[0315] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also in a position overlapping with the conductive layer 152C, which can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device.

[0316] 6(B), a resist mask 190R is used to remove a portion of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. The resist mask 190R is then removed. The mask layer 159R is used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Rf to form a sacrificial layer 158R.

[0317] By using the wet etching method, damage to the organic compound film 103Rf during processing of the sacrificial film 158Rf and the mask film 159Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use an acid aqueous solution such as a developer, an alkaline aqueous solution such as a tetramethylammonium hydroxide aqueous solution (TMAH), or a chemical solution using dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0318] Furthermore, when dry etching is used to process the sacrificial film 158Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0319] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0320] 6(B), the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the sacrificial layer 158R are used as a hard mask to remove a part of the organic compound film 103Rf, thereby forming the organic compound layer 103R.

[0321] 6B, a stacked structure of the organic compound layer 103R, the sacrificial layer 158R, and the mask layer 159R remains on the conductive layer 152R. Also, the conductive layers 152G and 152B are exposed.

[0322] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0323] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using an oxygen-containing gas as the etching gas.

[0324] Alternatively, an etching gas containing oxygen may be used. The etching rate can be increased by using an etching gas containing oxygen. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This can reduce damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be reduced.

[0325] When dry etching is used, it is preferable to use a gas containing one or more of H, CF, C, F, SF, CHF, Cl, H, O, BCl, or Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0326] Subsequently, as shown in FIG. 7(A), an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed.

[0327] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0328] Next, as shown in FIG. 7A, a sacrificial film 158Gf and a mask film 159Gf are formed in this order. Then, a resist mask 190G is formed. The materials and forming methods of the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0329] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0330] 7(B), a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. Next, using the mask layer 159G as a mask, a portion of the sacrificial film 158Gf is removed to form a sacrificial layer 158G. Next, the organic compound film 103Gf is processed to form an organic compound layer 103G.

[0331] Subsequently, as shown in FIG. 7(C), an organic compound film 103Bf is formed.

[0332] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf, and can have the same structure as the organic compound film 103Rf.

[0333] 7(C), a sacrificial film 158Bf and a mask film 159Bf are formed in this order. Then, a resist mask 190B is formed. The materials and forming methods of the sacrificial film 158Bf and the mask film 159Bf are the same as those applicable to the sacrificial film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those applicable to the resist mask 190R.

[0334] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0335] 7(D), a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B. The organic compound film 103Bf is then processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as hard masks to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0336] 7D, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0337] It is preferable that the side surfaces of the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are perpendicular or approximately perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces is 60 degrees or more and 90 degrees or less.

[0338] As described above, the distance between adjacent pairs of the organic compound layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. The distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0339] Subsequently, as shown in FIG. 8(A), it is preferable to remove the mask layers 159R, 159G, and 159B.

[0340] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103 during the mask layer removal can be reduced compared to when a dry etching method is used.

[0341] The mask layer may also be removed by dissolving it in a polar solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0342] After removing the mask layer, a drying treatment may be performed to remove water adsorbed on the surface. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0343] Subsequently, as shown in FIG. 8(B), an inorganic insulating film 125f is formed.

[0344] Subsequently, as shown in FIG. 8(C), an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0345] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0346] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0347] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and also allows for the formation of a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0348] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0349] Subsequently, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. The insulating layer 127 is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0350] The exposed region of the insulating film 127f can control the width of the insulating layer 127 to be formed later. In this embodiment, the insulating layer 127 is processed so as to have a portion overlapping the upper surface of the conductive layer 151.

[0351] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0352] Subsequently, as shown in FIG. 9(A), development is carried out to remove the exposed area of ​​the insulating film 127f, thereby forming the insulating layer 127a.

[0353] 9(B), an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and reduce the thickness of a portion of the sacrificial layers 158R, 158G, and 158B. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Furthermore, the surfaces of the thin portions of the sacrificial layers 158R, 158G, and 158B are exposed. Note that, hereinafter, the etching process using the insulating layer 127a as a mask may be referred to as the first etching process.

[0354] The first etching process can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the first etching process can be performed all at once, which is preferable.

[0355] When dry etching is performed, it is preferable to use a chlorine-based gas. Examples of chlorine-based gases that can be used include Cl2, BCl3, SiCl4, and CCl4, either singly or in combination. Furthermore, oxygen gas, hydrogen gas, helium gas, and argon gas can be added to the chlorine-based gas, either singly or in combination. By using dry etching, thin-film regions of the sacrificial layers 158R, 158G, and 158B can be formed with good in-plane uniformity.

[0356] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source, such as an inductively coupled plasma (ICP) etching apparatus, or a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes.

[0357] Furthermore, it is preferable to perform the first etching process by wet etching. Using wet etching can reduce damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B compared to using dry etching. For example, wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. Alternatively, an acid solution containing fluoride can also be used. In this case, wet etching can be performed by a puddle method. Note that, if the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158R, 158G, and 158B, the above-mentioned etching processes can be performed simultaneously, which is preferable.

[0358] In the first etching process, the sacrificial layers 158R, 158G, and 158B are not completely removed, and the etching process is stopped when the film thicknesses of the sacrificial layers 158R, 158G, and 158B are reduced. In this manner, by leaving the sacrificial layers 158R, 158G, and 158B on the organic compound layers 103R, 103G, and 103B, respectively, it is possible to prevent the organic compound layers 103R, 103G, and 103B from being damaged in subsequent processes.

[0359] Next, the entire substrate is exposed to visible light or ultraviolet light, and the insulating layer 127a is preferably irradiated with the energy density of 0 mJ / cm. 2 Larger, 800mJ / cm 2 It is preferable that the dose is 0 mJ / cm or less, and 2 Larger, 500mJ / cm 2 It is more preferable to perform the following. By performing such exposure after development, the transparency of the insulating layer 127a can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to transform the insulating layer 127a into a tapered shape in a later step can be reduced in some cases.

[0360] Here, the presence of a barrier insulating layer against oxygen (e.g., an aluminum oxide film, etc.) as the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B can reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0361] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into the insulating layer 127 having tapered side surfaces (FIG. 9C). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. This can improve adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127.

[0362] By not completely removing the sacrificial layers 158R, 158G, and 158B in the first etching process and leaving the sacrificial layers 158R, 158G, and 158B in a thinner state, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0363] 10(A), an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B. As a result, openings are formed in the sacrificial layer 158R, the sacrificial layer 158G, and the sacrificial layer 158B, respectively, and the upper surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Note that, hereinafter, this etching process may be referred to as a second etching process.

[0364] The end of the inorganic insulating layer 125 is covered with the insulating layer 127. Also, Fig. 10(A) shows an example in which part of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered with the insulating layer 127, and the tapered portion formed by the second etching process is exposed.

[0365] The second etching process is performed by wet etching. By using wet etching, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when dry etching is used. Wet etching can be performed using, for example, an alkaline solution or an acidic solution. It is preferable to use an aqueous solution so that the organic compound layer 103 does not dissolve.

[0366] 10(B), a common electrode 155 is formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum deposition.

[0367] 10(C), a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0368] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a display device can be manufactured. As described above, in the method for manufacturing a display device of one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of the display device and suppress the occurrence of defects.

[0369] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped organic compound layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, even in a display device including tandem light-emitting devices fabricated by photolithography, a display device with excellent characteristics can be provided.

[0370] (Fourth embodiment) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0371] The display device of the present embodiment can be a high-definition display device, and can therefore be used as a display unit for information terminals (wearable devices) such as wristwatches and bracelets, as well as for wearable devices that can be worn on the head, such as VR devices such as head-mounted displays (HMDs) and AR devices such as glasses.

[0372] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0373] [Display module] 11(A) shows a perspective view of the display module 280. The display module 280 has a display device 100A and an FPC 290. Note that the display device included in the display module 280 is not limited to the display device 100A, and may be any of the display devices 100B, 100C, 100D, 100D2, 100E, and 100E2 described below.

[0374] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display unit 281. The display unit 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel unit 284 (described later) can be viewed.

[0375] 11(B) is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to an FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0376] The pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 11(B). The various configurations described in the previous embodiments can be applied to the pixel 284a.

[0377] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0378] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0379] The circuit portion 282 includes a circuit for driving each pixel circuit 283a of the pixel circuit portion 283. For example, it is preferable that the circuit portion 282 includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0380] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit section 282. An IC may be mounted on the FPC 290.

[0381] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281.

[0382] Such a display module 280 has extremely high resolution and can therefore be suitably used in VR devices such as HMDs or glasses-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this and can be suitably used in electronic devices having relatively small display units.

[0383] [Display device 100A] The display device 100A shown in FIG. 12A includes a substrate 301, a light emitting device 130R, a light emitting device 130G, a light emitting device 130B, a capacitor 240, and a transistor 310.

[0384] The substrate 301 corresponds to the substrate 291 in FIGS. 12A and 12B. The transistor 310 has a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0385] Furthermore, an element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0386] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided on the insulating layer 261 .

[0387] Capacitor 240 has conductive layer 241, conductive layer 245, and insulating layer 243 located therebetween. Conductive layer 241 functions as one electrode of capacitor 240, conductive layer 245 functions as the other electrode of capacitor 240, and insulating layer 243 functions as a dielectric of capacitor 240.

[0388] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0389] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0390] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B. Furthermore, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. A sacrificial layer 158R is located on the organic compound layer 103R, a sacrificial layer 158G is located on the organic compound layer 103G, and a sacrificial layer 158B is located on the organic compound layer 103B.

[0391] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plug.

[0392] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting devices 130 to the substrate 120, refer to Embodiment 3. The substrate 120 corresponds to the substrate 292 in FIG. 11(A).

[0393] Fig. 12(B) is a modified example of the display device 100A shown in Fig. 12(A). The display device shown in Fig. 12(B) has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. In the display device shown in Fig. 12(B), the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0394] [Display device 100B] FIG. 13 shows a perspective view of the display device 100B, and FIG. 14 shows a cross-sectional view of the display device 100C.

[0395] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 13, the substrate 352 is indicated by a dashed line.

[0396] The display device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, etc. Fig. 13 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 13 can also be called a display module having the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device having a connector such as an FPC attached to a substrate, or a display device having an IC mounted on the substrate, is called a display module.

[0397] The connection section 140 is provided outside the pixel section 177. There may be one or more connection sections 140. The connection section 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0398] The circuit 356 can be, for example, a scanning line driver circuit.

[0399] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0400] 13 shows an example in which an IC 354 is provided on a substrate 351 by a COG (Chip On Glass) method or a COF (Chip on Film) method. The IC 354 may be, for example, an IC having a scanning line driver circuit or a signal line driver circuit. The display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by, for example, a COF method.

[0401] Figure 14 shows an example of a cross section of the display device 100B in Figure 13, where part of the area including the FPC 353, part of the circuit 356, part of the pixel section 177, part of the connection section 140, and part of the area including the end portion are cut away, as display device 100C.

[0402] [Display device 100C] The display device 100C shown in Figure 14 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light, etc.

[0403] For details of the light emitting devices 130R, 130G, and 130B, refer to the third embodiment.

[0404] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0405] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with a side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0406] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0407] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0408] Layer 128 has the function of filling in recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B and planarizing the surface. Conductive layers 151R, 151G, and 151B, which are electrically connected to conductive layer 224R, conductive layer 224G, and conductive layer 224B, are provided on conductive layer 224R, conductive layer 224G, and conductive layer 224B and layer 128. Therefore, the regions overlapping with the recesses in conductive layer 224R, conductive layer 224G, and conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0409] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used for the layer 128 as appropriate. In particular, the layer 128 is preferably formed using an insulating material, and is particularly preferably formed using an organic insulating material. For example, the organic insulating materials that can be used for the insulating layer 127 described above can be used for the layer 128.

[0410] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 14, the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0411] 14 shows an example in which connecting portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also shown in FIG. 14 is an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0412] The display device 100C is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrodes contain a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0413] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0414] The insulating layers 211, 213, and 215 are each preferably formed using an inorganic insulating film.

[0415] The insulating layer 214, which functions as a planarizing layer, is preferably an organic insulating layer.

[0416] The transistor 201 and the transistor 205 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate.

[0417] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0418] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. Also, various optical members can be arranged on the outside of the substrate 352.

[0419] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0420] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0421] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0422] [Display device 100D] The display device 100D shown in FIG. 15 differs from the display device 100C shown in FIG. 14 mainly in that it is a bottom-emission display device.

[0423] Light emitted from the light emitting device is emitted toward the substrate 351. It is preferable that a material with high transparency to visible light is used for the substrate 351. On the other hand, the light transparency of the material used for the substrate 352 is not an issue.

[0424] A light-shielding layer 317 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 15 shows an example in which the light-shielding layer 317 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 317, and the transistors 201, 205, etc. are provided over the insulating layer 153.

[0425] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0426] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0427] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are each made of a material that is highly transparent to visible light. The second electrode 102 is preferably made of a material that reflects visible light.

[0428] Although the light emitting device 130G is not shown in FIG. 15, the light emitting device 130G is also provided.

[0429] Although FIG. 15 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0430] [Display device 100D2] The display device 100D2 shown in Fig. 16(A) is an example of a bottom-emission display device that differs from the display device 100D shown in Fig. 15. The display device 100D2 differs from the display device 100D in that it has an organic resin layer 180. Note that in the drawing, the reference numerals of the same components as those in Fig. 15 may be omitted, and the description in Fig. 15 may be referred to for details.

[0431] 16(B) shows a top view layout of pixel 178 (pixel 178a and pixel 178b) having subpixels 110 (subpixels 110R, 110G, 110B, and 110W), and FIG. 16(C) shows a top view of organic resin layer 180 in a region where subpixels 110R and 110W of pixel 178 are formed. The width between light-shielding layers 317 is width 110Rw in the light-emitting region of subpixel 110R.

[0432] As shown in FIG. 16(A), the organic resin layer 180 is provided on the insulating layer 214. As shown in the region surrounded by the dashed line in FIG. 16(A) and in FIG. 16(C), the organic resin layer 180 has curved recesses 181 (recesses 181a and 181b) at least in the region where the subpixels are formed. Note that the recesses 181 may also be provided outside the light-emitting region, such as recess 181c. Providing recess 181c refracts light emitted in the region overlapping with the light-shielding layer 317 or light traveling to the region overlapping with the light-shielding layer 317, allowing it to be extracted from the light-emitting region, thereby improving light-emitting efficiency.

[0433] A plurality of recesses 181 may be formed in a matrix. Recesses 181a and 181b may be provided in contact with each other, or may have a flat surface between them.

[0434] 16, the recess has a hexagonal top surface shape (FIG. 16(C)) and a semicircular cross-sectional shape (FIG. 16(A)), but other shapes may be used as needed. For example, the recess may have a top surface shape of a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0435] An insulating layer containing an organic material can be used as the organic resin layer 180. For example, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenol resin, precursors of these resins, etc. can be used as the organic resin layer 180. Alternatively, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin can be used as the organic resin layer 180.

[0436] Furthermore, a photosensitive resin can be used as the organic resin layer 180. A photoresist can be used as the photosensitive resin. The photosensitive resin can be a positive type material or a negative type material.

[0437] The organic resin layer 180 may contain a material that absorbs visible light. For example, the organic resin layer 180 itself may be made of a material that absorbs visible light, or the organic resin layer 180 may contain a pigment that absorbs visible light. For example, the organic resin layer 180 may be made of a resin that can be used as a color filter that transmits red, blue, or green light and absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix.

[0438] In addition, a first electrode 101 (a first electrode 101R and a first electrode 101W) is provided on the organic resin layer 180, and an organic compound layer 103 is provided on the first electrode 101. Ends of the first electrode 101 and the organic compound layer 103 may be covered with an insulating layer 127.

[0439] Furthermore, the first electrode 101 formed on the organic resin layer 180 has a recess similar to the recess of the organic resin layer 180. Furthermore, the organic compound layer 103 formed on the first electrode 101 has a recess similar to the recess of the first electrode 101. Furthermore, the common layer 104 formed on the organic compound layer 103 has a recess similar to the recess of the organic compound layer 103. Furthermore, the second electrode 102 formed on the common layer 104 has a recess similar to the recess of the common layer 104. That is, the recesses of the organic resin layer 180, the first electrode 101, the organic compound layer 103, the common layer 104, and the second electrode 102 have a structure in which they overlap one another.

[0440] In addition, a common layer 104 is provided over the organic compound layer 103 and the insulating layer 127, and a second electrode 102 is provided over the common layer 104. A protective layer 131 is provided over the second electrode 102, and the second electrode 102 is bonded to a substrate 352 via an adhesive layer 142.

[0441] Although light emitting device 130G and light emitting device 130B are not shown in FIG. 16, light emitting device 130G and light emitting device 130B are also provided.

[0442] [Display device 100E] The display device 100E shown in FIG. 17 is a modification of the display device 100C shown in FIG. 14, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0443] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layer 132R, the colored layer 132G, and the colored layer 132B. The colored layer 132R, the colored layer 132G, and the colored layer 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0444] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The display device 100E may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0445] [Display device 100E2] The display device 100E2 shown in Fig. 18(A) is a modified example of the display device 100E shown in Fig. 17, and has microlenses 182 on the colored layers 132R, 132G, and 132B. Note that in the drawing, the reference numerals of the same components as those in Fig. 17 may be omitted, and the description in Fig. 17 may be referred to for details.

[0446] 18(B) shows a top view layout of a pixel 178 (pixels 178a and 178b) having subpixels 110 (subpixels 110R, 110G, and 110B), and FIG. 18(C) shows a top view of a microlens 182 in a region where the subpixels 110R, 110G, and 110B of the pixel 178 are formed. The region where the common electrode 155 and the organic compound layer 103 are in contact has a width 110Gw in the light-emitting region of the subpixel 110G.

[0447] 18(A), a planarization film 143 is provided on a protective layer 131, and a colored layer 132R, a colored layer 132G, and a colored layer 132B are provided on the planarization film 143. A planarization film 144 is provided so as to cover the colored layer 132R, the colored layer 132G, and the colored layer 132B. A microlens 182 is provided on the planarization film 144.

[0448] As shown in FIG. 18C, the microlens 182 may be provided for each sub-pixel in a region where the sub-pixel is formed.

[0449] 18(C), the top surface shape of the microlens 182 is shown as a hexagon, but other shapes may be used as needed. For example, the top surface shape of the microlens 182 may be a polygon such as a triangle, a quadrangle (including a rectangle and a square), a pentagon, or any of these polygons with rounded corners, an ellipse, or a circle.

[0450] The microlenses 182 can be formed using the same material as the organic resin layer 180 .

[0451] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0452] (Embodiment 5) In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0453] The electronic devices of this embodiment include the display device of one embodiment of the present invention in a display portion. The display device of one embodiment of the present invention has low power consumption and high reliability. Therefore, the display device of one embodiment of the present invention can be used in the display portion of various electronic devices.

[0454] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0455] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 19(A) to 19(D).

[0456] The electronic device 700A shown in Figure 19(A) and the electronic device 700B shown in Figure 19(B) each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0457] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0458] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visible through the optical member 753.

[0459] Electronic device 700A and electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, electronic device 700A and electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in display area 756.

[0460] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0461] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or by wire.

[0462] The housing 721 may be provided with a touch sensor module.

[0463] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0464] The electronic device 800A shown in Figure 19(C) and the electronic device 800B shown in Figure 19(D) each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0465] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can be highly reliable.

[0466] Display unit 820 is provided inside housing 821 at a position that can be viewed through lens 832. Also, by displaying different images on the pair of display units 820, it is possible to perform a three-dimensional display using parallax.

[0467] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0468] The wearing part 823 allows the user to wear the electronic device 800A or the electronic device 800B on the head.

[0469] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide angle.

[0470] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0471] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0472] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0473] 19B includes an earphone unit 727. A part of the wiring connecting the earphone unit 727 and a control unit may be disposed inside the housing 721 or the attachment unit 723.

[0474] 19(D) includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 can be configured to be connected to each other by wire.

[0475] As described above, the electronic devices of one embodiment of the present invention are preferably either glasses-type devices (such as the electronic devices 700A and 700B) or goggle-type devices (such as the electronic devices 800A and 800B).

[0476] An electronic device 6500 shown in FIG. 20A is a portable information terminal that can be used as a smartphone.

[0477] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, and a light source 6508. The display portion 6502 has a touch panel function.

[0478] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can be highly reliable.

[0479] FIG. 20B is a schematic cross-sectional view including the end portion of the housing 6501 on the microphone 6506 side.

[0480] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, optical members 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0481] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0482] In an area outside the display unit 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0483] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0484] 20C shows an example of a television set. A television set 7100 includes a display portion 7000 built in a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0485] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0486] The television set 7100 shown in FIG. 20C can be operated using an operation switch provided on a housing 7171 and a separate remote control 7151.

[0487] 20D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. A display portion 7000 is incorporated in the housing 7211.

[0488] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can be highly reliable.

[0489] 20(E) and 20(F) show an example of digital signage.

[0490] 20E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0491] 20F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0492] 20E and 20F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0493] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0494] Furthermore, as shown in Figures 20(E) and 20(F), it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly communicate with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0495] The electronic devices shown in Figures 21(A) to 21(G) have a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0496] 21(A) to 21(G) have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing by various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0497] The electronic devices shown in FIGS. 21A to 21G will be described in detail below.

[0498] FIG. 21A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. The mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces thereof. FIG. 21A shows an example in which three icons 9050 are displayed. Information 9051 indicated by a dashed rectangle can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0499] 21B is a perspective view of a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is placed in a breast pocket of clothes.

[0500] 21C is a perspective view of a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mails, document browsing and creation, music playback, internet communication, and computer games. The tablet terminal 9173 has a display portion 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0501] 21D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display portion 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free conversation by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and reception with another information terminal and charge itself through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0502] 21(E) to 21(G) are perspective views showing a foldable mobile information terminal 9201. FIG. 21(E) shows the mobile information terminal 9201 in an unfolded state, FIG. 21(G) shows it in a folded state, and FIG. 21(F) is a perspective view showing a state in the process of changing from one of FIG. 21(E) and FIG. 21(G) to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent viewability of the display. A display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm to 150 mm.

[0503] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when multiple configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate. [Example]

[0504] In this example, the fabrication methods and characteristics of light-emitting devices R1, G1, and B1, which are light-emitting devices according to one embodiment of the present invention, and comparative light-emitting devices R1, G1, and B1, which are comparative light-emitting devices, are described in detail. The structural formulas of the main compounds used in this example are shown below.

[0505] [ka]

[0506] [ka]

[0507] (Method for fabricating light-emitting device R1) First, on a glass substrate, 100 nm of silver (Ag) was deposited as a reflective electrode from the substrate side, and 85 nm of indium tin oxide containing silicon oxide (ITSO) was deposited as a transparent electrode by sputtering to form a 2 mm x 2 mm first electrode 101. The transparent electrode functions as an anode, and is considered to be the first electrode 101 together with the reflective electrode.

[0508] Next, as a pretreatment for forming a light-emitting device on the substrate, the substrate surface was washed with water and baked at 200°C for 1 hour.

[0509] Then, about 1 × 10 -4 The substrate was introduced into a vacuum deposition apparatus whose internal pressure had been reduced to 100 Pa, and after vacuum baking at 170° C. for 30 minutes in a heating chamber within the vacuum deposition apparatus, the substrate was allowed to cool for approximately 30 minutes.

[0510] Next, the substrate was fixed to a holder provided in a vacuum deposition apparatus so that the surface on which the first electrode 101 was formed faced downward. N-(biphenyl-2-yl)-N-(9,9-dimethylfluoren-2-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: oFBiSF(2)) represented by the above structural formula (i) and a material (OCHD-003) having a molecular weight of 672 and electron acceptor properties, which contained fluorine, were co-deposited by a deposition method to a thickness of 10 nm on the first electrode 101 in a weight ratio of 1:0.03 (=oFBiSF(2):OCHD-003).

[0511] On the hole injection layer 111, oFBiSF(2) was deposited to a thickness of 150 nm to form a first hole transport layer.

[0512] Next, a first light-emitting layer was formed on the first hole-transporting layer by co-depositing 11-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr) represented by the above structural formula (ii), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: PCBBiF) represented by the above structural formula (iii), and OCPG-006, a red phosphorescent material, in a weight ratio of 0.7:0.3:0.05 (=11mDBtBPPnfpr:PCBBiF:OCPG-006) to a thickness of 40 nm.

[0513] After that, 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02) represented by the above structural formula (iv) was evaporated to a thickness of 10 nm to form a first electron transport layer.

[0514] After the formation of the first electron transport layer, 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviated as mPPhenP) represented by the above structural formula (v) as a second organic compound containing a phenanthroline skeleton and lithium oxide (LiO) were co-deposited to a thickness of 5 nm to form a first layer, copper phthalocyanine (abbreviated as CuPc) represented by the above structural formula (vii) was co-deposited to a thickness of 2 nm to form a third layer, and oFBiSF(2) and OCHD-003 were co-deposited to a thickness of 10 nm to form a second layer, forming an intermediate layer.

[0515] On the intermediate layer, oFBiSF(2) was evaporated to a thickness of 75 nm to form a second hole transport layer.

[0516] A second light-emitting layer was formed on the second hole-transporting layer by co-depositing 11mDBtBPPnfpr, PCBBiF, and OCPG-006 to a thickness of 40 nm in a weight ratio of 0.7:0.3:0.05 (=11mDBtBPPnfpr:PCBBiF:OCPG-006).

[0517] Thereafter, 2,2'-[1,2-naphthalenediyldi(4,1-phenylene)]bis(4,6-diphenyl-1,3,5-triazine) (abbreviation: TznP2N) represented by the above structural formula (viii) and 8-hydroxyquinolinatolithium (abbreviation: Liq) represented by the above structural formula (ix) were co-deposited to a thickness of 25 nm in a weight ratio of 1:1 (=TznP2N:Liq) to form a second electron transport layer.

[0518] Thereafter, Liq was evaporated to a thickness of 1 nm, and silver (Ag) and magnesium (Mg) were co-evaporated to a volume ratio of 1:0.1 to a thickness of 15 nm to form the second electrode 102. In addition, a 70 nm film of 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II) represented by the above structural formula (x) was deposited on the second electrode 102 as a cap layer to improve the light extraction efficiency.

[0519] Next, in a glove box with a nitrogen atmosphere, the light-emitting device was sealed with a glass substrate to prevent it from being exposed to the atmosphere (a UV-curable sealant was applied around the element, UV was irradiated only onto the sealant without irradiating the light-emitting device, and heat treatment was performed at 80°C under atmospheric pressure for 1 hour), thereby forming light-emitting device R1.

[0520] (Method for fabricating comparative light-emitting device R1) Comparative light-emitting device R1 was prepared in the same manner as light-emitting device R1, except that TznP2N in the second electron-transporting layer in light-emitting device R1 was replaced with 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm) represented by the above structural formula (xi).

[0521] (Method for fabricating light-emitting device G1) The light-emitting device G1 was formed by changing the thickness of the first hole transport layer in the light-emitting device R1 to 80 nm and the thickness of the second hole transport layer to 60 nm, and the first and second light-emitting layers were formed by using 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8mpTP-4mDBtPBfpm) represented by the above structural formula (xii) and 9-(2-naphthyl)-9'-phenyl-3,3'-bi-9H-carbazole (abbreviation: βNCC The light-emitting device was fabricated in the same manner as light-emitting device R1, except that it was formed by co-evaporation of 8mpTP-4mDBtPBfpm and [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(5mppy-d3)2(mbfpypy-d3)) represented by structural formula (xiv) above, in a weight ratio of 0.5:0.5:0.1 (=8mpTP-4mDBtPBfpm:βNCCP:Ir(5mppy-d3)2(mbfpypy-d3)).

[0522] (Method for fabricating comparative light-emitting device G1) Comparative light-emitting device G1 was fabricated in the same manner as light-emitting device G1, except that the TznP2N in the second electron-transporting layer in light-emitting device G1 was changed to 6BP-4Cz2PPm, and the first and second light-emitting layers were formed by co-evaporation of 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCzTzn) represented by structural formula (xv) above and Ir(5mppy-d3)2(mbfpypy-d3) in a weight ratio of 1:0.1.

[0523] (Method for fabricating light-emitting device B1) The light-emitting device B1 was formed by changing the thickness of the first hole transport layer in the light-emitting device R1 to 45 nm and the thickness of the second hole transport layer to 55 nm, and the first and second light-emitting layers were formed by combining 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth) represented by the above structural formula (xvi) and N,N'-diphenyl- The device was fabricated in the same manner as light-emitting device R1, except that a 25-nm thick layer was formed by co-evaporation of N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) and N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviation: 3,10PCA2Nbf(IV)-02) in a weight ratio of 1:0.015 (=αN-βNPAnth:3,10PCA2Nbf(IV)-02).

[0524] (Method for fabricating comparative light-emitting device B1) Comparative light-emitting device B1 was fabricated in the same manner as light-emitting device B1, except that TznP2N in the second electron-transporting layer of light-emitting device B1 was changed to 6BP-4Cz2PPm.

[0525] The device structures of light-emitting device R1, light-emitting device G1, light-emitting device B1, comparative light-emitting device R1, comparative light-emitting device G1, and comparative light-emitting device B1 are shown below.

[0526] [Table 1]

[0527] [Table 2]

[0528] [Table 3]

[0529] [Table 4]

[0530] The luminance-current density characteristics of light-emitting device R1 and comparative light-emitting device R1 are shown in Figure 22, the current efficiency-luminance characteristics in Figure 23, the current density-voltage characteristics in Figure 24, the power efficiency-luminance characteristics in Figure 25, and the electroluminescence spectra in Figure 26. The luminance-current density characteristics of light-emitting device G1 and comparative light-emitting device G1 are shown in Figure 27, the current efficiency-luminance characteristics in Figure 28, the current density-voltage characteristics in Figure 29, the power efficiency-luminance characteristics in Figure 30, the electroluminescence spectra in Figure 31, and the normalized luminance-time characteristics in Figure 32. The luminance-current density characteristics of light-emitting device B1 and comparative light-emitting device B1 are shown in Figure 36, the current efficiency-luminance characteristics in Figure 37, the current density-voltage characteristics in Figure 38, the power efficiency-luminance characteristics in Figure 39, the blue index-luminance characteristics in Figure 40, and the electroluminescence spectra in Figure 41.

[0531] Furthermore, the light-emitting device R1 and the comparative light-emitting device R1 exhibited a luminance of 1000 cd / m 2 Table 5 shows the main characteristics of the light-emitting device G1 and the comparative light-emitting device G1 in the vicinity of 1000 cd / m 2 Table 6 shows the main characteristics of the light-emitting device B1 and the comparative light-emitting device B1 in the vicinity of 1000 cd / m 2 The main characteristics in this range are shown in Table 7. The luminance, CIE chromaticity, and electroluminescence spectrum were measured at room temperature using a spectroradiometer (SR-UL1R, manufactured by Topcon Corporation).

[0532] [Table 5]

[0533] 22 to 26 and Table 5 show that both the light-emitting device R1 and the comparative light-emitting device R1 emit red light with a peak wavelength of 625 nm in the electroluminescence spectrum. Furthermore, while both the light-emitting device R1 and the comparative light-emitting device R1 have good current efficiency, FIG. 24 shows that the light-emitting device R1 has a lower driving voltage than the comparative light-emitting device R1 and is therefore a light-emitting device with good characteristics. This demonstrates that the light-emitting device R1 of one embodiment of the present invention is a tandem light-emitting device with good characteristics.

[0534] [Table 6]

[0535] 27 to 31 and Table 6 show that both the light-emitting device G1 and the comparative light-emitting device G1 emit green light with a peak wavelength of around 528 nm in the electroluminescence spectrum. Although both the light-emitting device G1 and the comparative light-emitting device G1 have good current efficiency, the light-emitting device G1 exhibits better current efficiency and therefore higher power efficiency. Furthermore, the light-emitting device G1 is a light-emitting device with good characteristics, having a lower driving voltage and lower power consumption than the comparative light-emitting device G1. This demonstrates that the light-emitting device G1 of one embodiment of the present invention is a tandem light-emitting device with good characteristics.

[0536] Furthermore, the current density of the light-emitting device G1 and the comparative light-emitting device G1 was 50 mA / cm 2 The normalized luminance time change characteristics are shown in FIG.

[0537] FIG. 32 shows that the light-emitting device G1 of one embodiment of the present invention has a smaller change in normalized luminance over time than the comparative light-emitting device G1, and is therefore a more reliable light-emitting device.

[0538] Figure 33 shows the PL spectra of a vapor-deposited film of 8-(p-terphenyl-3-yl)-4-[3-(dibenzothiophen...

Claims

1. a first electrode; a second electrode; and The middle class and a first light-emitting layer; and a second light-emitting layer; and a first electron transport layer; and a second electron transport layer, the intermediate layer is located between the first electrode and the second electrode; the first light-emitting layer is located between the first electrode and the intermediate layer, the second light-emitting layer is located between the intermediate layer and the second electrode, the first electron transport layer is located between the first light-emitting layer and the intermediate layer; the second electron transport layer is located between the second light-emitting layer and the second electrode; the first light-emitting layer includes a first luminescence center substance, a third organic compound, and a fourth organic compound; the second light-emitting layer includes a second light-emitting center substance, a fifth organic compound, and a sixth organic compound; the third organic compound and the fourth organic compound are a combination that forms a first exciplex, the fifth organic compound and the sixth organic compound are a combination that forms a second exciplex, a difference between a maximum peak wavelength in an emission spectrum of the first luminescence center substance and a maximum peak wavelength in an emission spectrum of the second luminescence center substance is 30 nm or less; A light-emitting device, wherein the first light-emitting layer and the second light-emitting layer are light-emitting layers that emit light of a different hue from a light-emitting layer of at least one of a plurality of other light-emitting devices adjacent to the light-emitting device.

2. a first electrode; a second electrode; and The middle class and a first light-emitting layer; and a second light-emitting layer; and a first electron transport layer; and a second electron transport layer, the intermediate layer is located between the first electrode and the second electrode; the first light-emitting layer is located between the first electrode and the intermediate layer, the second light-emitting layer is located between the intermediate layer and the second electrode, the first electron transport layer is located between the first light-emitting layer and the intermediate layer; the second electron transport layer is located between the second light-emitting layer and the second electrode; the second electron transport layer includes a first organic compound including a triazine skeleton, the intermediate layer has a mixed layer of a second organic compound having a phenanthroline skeleton and lithium or a lithium compound, the first light-emitting layer includes a first luminescence center substance, a third organic compound, and a fourth organic compound; the second light-emitting layer includes a second light-emitting center substance, a fifth organic compound, and a sixth organic compound; the third organic compound and the fourth organic compound are a combination that forms a first exciplex, the fifth organic compound and the sixth organic compound are a combination that forms a second exciplex, a difference between a maximum peak wavelength in an emission spectrum of the first luminescence center substance and a maximum peak wavelength in an emission spectrum of the second luminescence center substance is 30 nm or less; A light-emitting device, wherein the first light-emitting layer and the second light-emitting layer are light-emitting layers that emit light of a different hue from a light-emitting layer of at least one of a plurality of other light-emitting devices adjacent to the light-emitting device.

3. In claim 2, The light-emitting device, wherein the first electron transport layer comprises a seventh organic compound including a triazine skeleton.

4. The light-emitting device according to claim 3 , wherein the first organic compound and the seventh organic compound are the same organic compound.

5. a first electrode; a second electrode; and The middle class and a first light-emitting layer; and a second light-emitting layer; and a first electron transport layer; and a second electron transport layer, the intermediate layer is located between the first electrode and the second electrode; the first light-emitting layer is located between the first electrode and the intermediate layer, the second light-emitting layer is located between the intermediate layer and the second electrode, the first electron transport layer is located between the first light-emitting layer and the intermediate layer; the second electron transport layer is located between the second light-emitting layer and the second electrode; the second electron transport layer includes a first organic compound including a triazine skeleton, the intermediate layer includes a second organic compound having a phenanthroline skeleton, the first electron transport layer includes a seventh organic compound including a triazine skeleton, the first light-emitting layer includes a first luminescence center substance, a third organic compound, and a fourth organic compound; the second light-emitting layer includes a second light-emitting center substance, a fifth organic compound, and a sixth organic compound; the third organic compound and the fourth organic compound are a combination that forms a first exciplex, the fifth organic compound and the sixth organic compound are a combination that forms a second exciplex, a difference between a maximum peak wavelength in an emission spectrum of the first luminescence center substance and a maximum peak wavelength in an emission spectrum of the second luminescence center substance is 30 nm or less; A light-emitting device, wherein the first light-emitting layer and the second light-emitting layer are light-emitting layers that emit light of a different hue from a light-emitting layer of at least one of a plurality of other light-emitting devices adjacent to the light-emitting device.

6. The light-emitting device according to claim 5 , wherein the first organic compound and the seventh organic compound are the same organic compound.

7. In claim 5, the intermediate layer contains lithium or a lithium compound; The intermediate layer comprises a mixed layer of the second organic compound and the lithium or lithium compound.

8. In any one of claims 2 to 7, an emission edge on a short wavelength side of the first exciplex is positioned at a wavelength shorter than an absorption edge on a long wavelength side of the first luminescence center substance, A light-emitting device in which the emission edge on the short wavelength side of the second exciplex is positioned at a wavelength shorter than the absorption edge on the long wavelength side of the second luminescence center substance.

9. In any one of claims 2 to 7, the peak wavelength of the emission spectrum of the first exciplex is located on the shorter wavelength side than the peak wavelength of the emission spectrum of the first luminescence center substance; and a difference between a peak wavelength of an emission spectrum of the first exciplex and a peak wavelength of an emission spectrum of the first luminescence center substance is 30 nm or less; the peak wavelength of the emission spectrum of the second exciplex is located on the shorter wavelength side than the peak wavelength of the emission spectrum of the second luminescence center substance; and A light-emitting device, wherein the difference between the peak wavelength of the emission spectrum of the second exciplex and the peak wavelength of the emission spectrum of the second luminescence center substance is 30 nm or less.

10. In any one of claims 2 to 7, an energy difference between the HOMO level and the LUMO level of the first luminescence center substance is larger than an energy difference between the HOMO level and the LUMO level of the first exciplex; A light-emitting device in which the energy difference between the HOMO level and the LUMO level of the second luminescence center substance is larger than the energy difference between the HOMO level and the LUMO level of the second exciplex.

11. A display device having a light-emitting device A and a light-emitting device B, The light-emitting device A and the light-emitting device B are adjacent to each other, The light-emitting device A is a first electrode A; a second electrode A; A middle layer A; a first light-emitting layer A; and a second light-emitting layer A; and a first electron transport layer A; a second electron transport layer A; the intermediate layer A is located between the first electrode A and the second electrode A, the first light-emitting layer A is located between the first electrode A and the intermediate layer A, the second light-emitting layer A is located between the intermediate layer A and the second electrode A, the first electron transport layer A is located between the first light-emitting layer A and the intermediate layer A, the second electron transport layer A is located between the second light-emitting layer A and the second electrode A; The light-emitting device B is a first electrode B; a second electrode B; Middle class B; a first light-emitting layer B; and a second light-emitting layer B; and a first electron transport layer B; and a second electron transport layer B; the intermediate layer B is located between the first electrode B and the second electrode B, the first light-emitting layer B is located between the first electrode B and the intermediate layer B, the second light-emitting layer B is located between the intermediate layer B and the second electrode B, the first electron transport layer B is located between the first light-emitting layer B and the intermediate layer B, the second electron transport layer B is located between the second light-emitting layer B and the second electrode B; the second electron transport layer A and the second electron transport layer B each contain a first organic compound including a triazine skeleton, the second electron transport layer A and the second electron transport layer B are made of the same material, the intermediate layer A and the intermediate layer B each contain a second organic compound having a phenanthroline skeleton and lithium or a lithium compound, the first light-emitting layer A includes a first light-emitting center substance, a third organic compound, and a fourth organic compound; the second light-emitting layer A includes a second light-emitting center substance, a fifth organic compound, and a sixth organic compound; the third organic compound and the fourth organic compound are a combination that forms a first exciplex, the fifth organic compound and the sixth organic compound are a combination that forms a second exciplex, the first light-emitting layer B has a third luminescent center substance, the second light-emitting layer B has a fourth luminescent center substance, a difference between a maximum peak wavelength in an emission spectrum of the first luminescence center substance and a maximum peak wavelength in an emission spectrum of the second luminescence center substance is 30 nm or less; a difference between a maximum peak wavelength in the emission spectrum of the third luminescent center substance and a maximum peak wavelength in the emission spectrum of the fourth luminescent center substance is 30 nm or less; The display device, wherein the first light-emitting layer A and the first light-emitting layer B, and the second light-emitting layer A and the second light-emitting layer B are light-emitting layers that emit light of different hues.

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