Light-emitting diode chip and manufacturing method for the same

Abstract

To provide a light-emitting diode chip and a manufacturing method for the same.SOLUTION: A manufacturing method for a light-emitting diode chip according to the present disclosure includes the steps of: providing a plurality of light-emitting diode elements on a substrate, covering the light-emitting diode element and the substrate with a photoresist layer, patterning the photoresist layer using a photomask, thereby forming an etching target structure, spray-etching the etching target structure and then removing the photoresist layer, thereby forming an after-etching structure, transferring the after-etching structure onto an elastic film, and forming a plurality of light-emitting diode chips by extending the elastic film. Thus, the structure damage, thermal loss, or dimension error that may occur at cutting can be reduced drastically. Moreover, the manufacturing efficiency of the light-emitting diode chip can be improved.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a light-emitting diode chip and a manufacturing method thereof, and more particularly to a light-emitting diode chip divided by structural expansion and a manufacturing method thereof. [Background technology]

[0002] A well-known method for manufacturing LED chips involves first epitaxially growing a substrate to form a preliminary diode structure, and then cutting the substrate to separate it into multiple LED chips. There are three main cutting processes: laser cutting, blade cutting, and plasma cutting. Simply put, laser cutting and plasma cutting involve burning the substrate with a high-power laser and high-temperature plasma, respectively, to create notches in the substrate and cause it to break, while blade cutting involves dividing the substrate with a sharp blade. Summary of the Invention [Problem to be solved by the invention]

[0003] The common problems of laser cutting, blade cutting, and plasma cutting are that the cutting speed is slow and high temperatures are likely to be generated during the cutting process, which will result in heat loss in the LED chips and further affect the service life of the LED chips.In addition, when cutting thin metal substrates or composite metal substrates, laser cutting, blade cutting, and plasma cutting are likely to result in dimensional errors, which will further reduce the yield of LED chips.

[0004] In view of this, how to improve the defects in cutting light-emitting diode chips has become a goal that related businesses strive for. [Means for solving the problem]

[0005] An object of the present disclosure is to provide a method for manufacturing light-emitting diode chips that can reduce heat loss during cutting and improve cutting efficiency and yield.

[0006] One embodiment of the present disclosure provides a method for manufacturing a light-emitting diode chip, the method including the steps of: providing a plurality of light-emitting diode elements spaced apart from one another on a surface of a substrate; covering the light-emitting diode elements and the surface of the substrate with a photoresist layer; patterning the photoresist layer with a photomask to form a structure to be etched; spray-etching the structure to be etched, and then removing the photoresist layer to form a post-etching structure, wherein the post-etching structure has a plurality of chip portions and a plurality of connecting portions respectively located between two adjacent chip portions and connected to the two chip portions, and the light-emitting diode elements are respectively located on the chip portions; transferring the post-etching structure onto an elastic film; and stretching the elastic film to break the connecting portions to form a plurality of light-emitting diode chips.

[0007] According to the method for manufacturing the light-emitting diode chip, the substrate may be a composite metal substrate including at least two structure layers.

[0008] According to the method for manufacturing a light emitting diode chip, the material of each structure layer may include at least one of copper, nickel, and iron.

[0009] According to the method for manufacturing a light-emitting diode chip, when spray etching is performed, an etching solution may be sprayed onto the structure to be etched using a micro nozzle.

[0010] According to the method for manufacturing the light-emitting diode chip, each connection portion may have a width, each chip portion may have an edge length, and the ratio of the width to the edge length may be 0.1 to 0.2.

[0011] Another embodiment of the present disclosure provides a light-emitting diode chip manufactured by the above-described method for manufacturing a light-emitting diode chip, the substrate of which has a body and at least one protrusion connected to the body and extending outward from the body.

[0012] According to the light-emitting diode chip, the number of protrusions may be two, the body may be rectangular, and the two protrusions may be respectively connected to two adjacent edges of the body.

[0013] According to the light-emitting diode chip, the number of protrusions may be three, the body may be rectangular, and the three protrusions may be respectively connected to three adjacent edges of the body.

[0014] According to the light-emitting diode chip, the number of protrusions may be four, the body may be rectangular, and the four protrusions may be connected to four edges of the body, respectively.

[0015] According to the light-emitting diode chip, the protrusion may be trapezoidal, and the long base of the protrusion may be connected to the body.

[0016] As a result, the manufacturing method of the light-emitting diode chip disclosed herein adjusts the post-etching structure so that the post-etching structure has multiple chip portions and multiple connection portions, and then the chip portions can be separated using a stretching method, thereby significantly reducing structural damage, heat loss, or dimensional errors caused by known cutting, and improving the manufacturing efficiency of the light-emitting diode chip. [Brief explanation of the drawings]

[0017] To make the above and other objects, features, advantages and embodiments of the present disclosure more clearly and comprehensibly, reference is made to the accompanying drawings as follows: [Figure 1] 1 is a process flowchart of a method for manufacturing a light-emitting diode chip according to an embodiment of the present disclosure. [Figure 2] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 3] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 4]1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 5A] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 5B] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 6] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 7A] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 7B] 1A to 1C are structural schematic diagrams of steps in a method for manufacturing a light-emitting diode chip; [Figure 8] 1 is a structural schematic diagram of a light-emitting diode chip; DETAILED DESCRIPTION OF THE INVENTION

[0018] Each embodiment of the present disclosure will be discussed in more detail below. However, the embodiments may be applications of various disclosed concepts and may be specifically implemented within various different specific scopes. The specific embodiments are merely for illustrative purposes and are not intended to limit the scope of the disclosure. In addition, to simplify the drawings, some well-known and commonly used structures and elements are simply and diagrammatically shown in the drawings, and overlapping elements may be represented by the same or similar numbers.

[0019] Please refer to Fig. 1. Fig. 1 is a process flowchart of a method 100 for manufacturing a light-emitting diode chip according to an embodiment of the present disclosure. The method 100 for manufacturing a light-emitting diode chip includes steps 110, 120, 130, 140, 150, and 160.

[0020] Please refer to FIG. 2. FIG. 2 is a structural schematic diagram of step 110 in the method 100 for manufacturing a light-emitting diode chip. Step 110 is to provide a plurality of light-emitting diode elements 210 on the surface of a substrate 220, and the light-emitting diode elements 210 are spaced apart to maintain an appropriate space for subsequent separation. The substrate 220 may be a composite metal substrate, which may include at least two structural layers, and the material of each structural layer may include at least one of copper, nickel, and iron. For example, the composite metal substrate may have a multi-layer structure, and the material of each layer structure may be adjusted according to the physical and chemical properties or circuit needs, so the present disclosure is not limited thereto.

[0021] Please refer to Figure 3. Figure 3 is a structural schematic diagram of step 120 in the method 100 for manufacturing a light-emitting diode chip. Step 120 is to cover the surfaces of the light-emitting diode element 210 and the substrate 220 with a photoresist layer 230. The photoresist layer 230 may be a positive photoresist material or a negative photoresist material. In this disclosure, a positive photoresist material is used as an example, but the present disclosure is not limited thereto.

[0022] Please refer to FIG. 4. FIG. 4 is a structural schematic diagram of step 130 in the method 100 for manufacturing a light-emitting diode chip. Step 130 involves patterning a photoresist layer 230 using a photomask M to form an etching target structure S1. In detail, the photomask M may have a plurality of first light-shielding portions M1 and a plurality of second light-shielding portions M2. During patterning, the first light-shielding portions M1 may be aligned with the light-emitting diode elements 210, and the area of ​​the first light-shielding portions M1 may be slightly larger than that of the light-emitting diode elements 210. The second light-shielding portions M2 may be located between and connected to two adjacent first light-shielding portions M1.

[0023] Please refer to Figures 5A and 5B. Figure 5A is a structural schematic diagram of one of step 140 in the method 100 for manufacturing a light-emitting diode chip, and Figure 5B is a structural schematic diagram of another of step 140 in the method 100 for manufacturing a light-emitting diode chip. Step 140 involves spray etching the structure to be etched S1 and then removing the photoresist layer 230 to form an after-etching structure S2. When performing spray etching, an etching solution is sprayed onto the structure to be etched S1 using a micro-nozzle N, thereby removing the substrate 220 not covered by the photomask M and the part of the substrate 220 covered by the second light-shielding portion M2, thereby forming a mesh-like array structure as shown in Figure 5A.

[0024] Specifically, the substrate 220 may be a composite metal substrate and may include at least two structural layers, preferably 2 to 5 structural layers, so that when spray etching is performed, an appropriate etching selectivity can be obtained, i.e., the etching solution can provide different etching rates for different structural layers, and the structural layers can be left closer to the photomask M. In addition, spray etching can further reduce side etching of the substrate 220, which contributes to the formation of a network array structure as shown in FIG. 5A.

[0025] The post-etching structure S2 has a plurality of chip portions S21 and a plurality of connecting portions S22, where the connecting portions S22 are respectively located between and connected to two adjacent chip portions S21, and the light-emitting diode elements 210 are respectively located in the chip portions S21. As can be seen from FIG. 5B, after the portion of the substrate 220 covered by the second light-shielding portion M2 is removed, a plurality of thin tethers 240 can be formed, and the tethers 240 respectively belong to the connecting portions S22.

[0026] Furthermore, each connection portion S22 may have a width W, and each tip portion S21 may have an edge length L, with the ratio of the width W to the edge length L being 0.1 to 0.2. This can improve the connection strength between the tip portions S21 and simultaneously improve the efficiency of subsequent separation of the tip portions S21. However, since the post-etching structure S2 can be smoothly separated in a subsequent process simply by having the tip portions S21 and the connection portions S22, the present disclosure is not limited to the dimensions of the tip portions S21 and the connection portions S22.

[0027] Please refer to Fig. 6. Fig. 6 is a structural schematic diagram of step 150 in the manufacturing method 100 for a light-emitting diode chip. Step 150 is to transfer the post-etching structure S2 onto an elastic film 250 to facilitate the subsequent separation of the chip portion S21.

[0028] Please refer to Figures 7A and 7B together. Figure 7A is a structural schematic diagram of one of step 160 in the manufacturing method 100 for a light-emitting diode chip, and Figure 7B is a structural schematic diagram of another of step 160 in the manufacturing method 100 for a light-emitting diode chip. Step 160 involves stretching the elastic film 250 to break the connecting portions S22 to form a plurality of light-emitting diode chips (without reference numerals), and when the connecting portions S22 are broken, protrusions 260 are formed on the edges of the two chip portions S21 connected to the connecting portions S22. In addition, each connection portion S22 has an extension direction, and here, taking the first extension direction D1 and the second extension direction D2 as examples, when the elastic film 250 is stretched, it can be stretched parallel to the first extension direction D1 and the second extension direction D2, and the central portion of each connection portion S22 can be narrower than both ends connected to the tip portion S21, thereby controlling the breaking point of the connection portion S22 and reducing the possibility of damage to the tip portion S21 due to the breakage of the connection portion S22.

[0029] It is particularly worth mentioning that although Figures 2 to 7B only take the production of nine LED chips as an example, in actual production, the number of LED elements 210 and the area of ​​the substrate 220 can be increased, and the shape of the photomask M can be adjusted accordingly to produce a large number of LED chips. Therefore, the present disclosure is not limited to the number or structure shown in Figures 2 to 7B.

[0030] Please refer to Fig. 8. Fig. 8 is a structural schematic diagram of a light-emitting diode chip 300. Another embodiment of the present disclosure provides a light-emitting diode chip 300 manufactured by the above-mentioned light-emitting diode chip manufacturing method 100. The substrate 320 of the light-emitting diode chip 300 has a body 321 and at least one protrusion 322, the protrusion 322 is connected to the body 321 and extends outward from the body 321, and the light-emitting diode element 310 of the light-emitting diode chip 300 is located in the body 321.

[0031] Specifically, when the tip portions S21 are separated from each other, the connection portions S22 between two adjacent tip portions S21 are broken, leaving the protrusions 322. Therefore, the number of the protrusions 322 may be four, the main body 321 may be rectangular, and the four protrusions 322 may be connected to four edges of the main body 321, respectively. Alternatively, referring to FIG. 7A , the tip portion S21 located at the corner of the after-etching structure S2 is connected to only two connection portions S22, so the number of the protrusions 322 may be two, and the two protrusions 322 may be connected to two adjacent edges of the main body 321, respectively. Alternatively, the tip portion S21 located at the edge of the after-etching structure S2 is connected to only three connection portions S22, so the number of the protrusions 322 may be three, and the three protrusions 322 may be connected to three adjacent edges of the main body 321, respectively.

[0032] Furthermore, since the central portion of the connection portion S22 may be narrower than both ends connected to the tip portion S21, the broken convex portion 322 may be trapezoidal, and the long base of the convex portion 322 may be connected to the main body 321.

[0033] As described above, the manufacturing method of the light-emitting diode chip disclosed herein adjusts the post-etching structure so that the post-etching structure has multiple chip portions and multiple connection portions, and then the chip portions can be separated using a stretching method, thereby significantly reducing structural damage, heat loss, or dimensional errors caused by known cutting, and improving the manufacturing efficiency of the light-emitting diode chip.

[0034] The present disclosure has been disclosed above in examples, but the examples are not intended to limit the present disclosure, and anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on what is defined by the claims attached below. [Explanation of symbols]

[0035] 100: Light-emitting diode chip manufacturing method 110, 120, 130, 140, 150, 160: Process 210, 310: light-emitting diode elements 220, 320: Substrate 230: Photoresist layer 240: Tether 250: Elastic film 260: Convex 300: Light-emitting diode chip 321:Main body 322: Convex M: Photomask M1: First light blocking part M2: 2nd light shielding part S1: Structure to be etched S2: Structure after etching S21: Tip part S22: Connection N: Micro nozzle W: Width L: Edge length D1: First extension direction D2: Second extension direction

Claims

1. A method for manufacturing a light emitting diode chip, comprising: providing a plurality of spaced apart light emitting diode elements on a surface of a substrate; covering the plurality of light emitting diode devices and the surface of the substrate with a photoresist layer; patterning the photoresist layer with a photomask to form a structure to be etched; a step of spray etching the structure to be etched, and then removing the photoresist layer to form a post-etching structure, wherein the post-etching structure has a plurality of chip portions and a plurality of connection portions respectively located between two adjacent chip portions and connected to the two chip portions, and the plurality of light-emitting diode elements are respectively located on the plurality of chip portions; transferring the post-etched structure onto an elastic film; stretching the elastic film to break the plurality of connection portions to form a plurality of light-emitting diode chips; A method for manufacturing a light-emitting diode chip comprising:

2. 2. The method for manufacturing a light-emitting diode chip as claimed in claim 1, wherein the substrate is a composite metal substrate including at least two structure layers.

3. The method for manufacturing a light-emitting diode chip according to claim 2 , wherein the material of each of the at least two structural layers includes at least one of copper, nickel, and iron.

4. The method for manufacturing a light-emitting diode chip according to claim 1 , wherein when spray etching is performed, an etching solution is sprayed onto the structure to be etched by a micro nozzle.

5. 2. The method for manufacturing a light-emitting diode chip according to claim 1, wherein each of the connection portions has a width, each of the chip portions has an edge length, and the ratio of the width to the edge length is 0.1 to 0.

2.

6. A light-emitting diode chip manufactured by the method for manufacturing a light-emitting diode chip according to claim 1, The substrate of the light-emitting diode chip has a body and at least one protrusion connected to the body and extending outward from the body.

7. 7. The light-emitting diode chip according to claim 6, wherein the number of the at least one protrusion is two, the body is rectangular, and the two protrusions are respectively connected to two adjacent edges of the body.

8. 7. The light-emitting diode chip according to claim 6, wherein the number of the at least one protrusion is three, the body is rectangular, and the three protrusions are respectively connected to three adjacent edges of the body.

9. 7. The light-emitting diode chip according to claim 6, wherein the number of the at least one protrusion is four, the body is rectangular, and the four protrusions are respectively connected to four edges of the body.

10. The light-emitting diode chip according to claim 6 , wherein the at least one protrusion is trapezoidal, and a long base of the at least one protrusion is connected to the body.

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