Magnetic memory device

Abstract

To provide a magnetic memory device capable of electrically isolating adjacent magnetoresistive elements from each other.SOLUTION: A magnetic memory device according to an embodiment includes: a lower structure 30; a first stacked structure 10 provided on the lower structure; a second stacked structure 10 provided on the lower structure; a first boron-containing layer 20 provided on a side surface of the first stacked structure and containing boron (B); and a second boron-containing layer 20 provided on a side surface of the second stacked structure and containing boron (B). Each of the first and second stacked structures includes: a basic portion 11 including a first magnetic layer 11a having a variable magnetization direction, a second magnetic layer 11b having a fixed magnetization direction, and a nonmagnetic layer 11c provided between the first magnetic layer and the second magnetic layer; a lower portion 12 provided on a lower layer side of the basic portion and having conductivity; and an upper portion 13 provided on an upper layer side of the basic portion and having conductivity.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD OF THE INVENTION The present invention relates to a magnetic storage device. [Background technology]

[0002] A magnetic memory device has been proposed in which a plurality of magnetoresistive effect elements are integrated on a semiconductor substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2013 / 0126995 Summary of the Invention [Problem to be solved by the invention]

[0004] A magnetic storage device capable of electrically isolating adjacent magnetoresistive elements accurately is provided. [Means for solving the problem]

[0005] The magnetic memory device according to the embodiment is a magnetic memory device comprising: a lower structure; a first stacked structure provided on the lower structure; a second stacked structure provided on the lower structure and adjacent to the first stacked structure; a first boron-containing layer provided on a side of the first stacked structure and containing boron (B); and a second boron-containing layer provided on a side of the second stacked structure and containing boron (B), wherein each of the first and second stacked structures comprises a basic portion including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a lower portion provided below the basic portion and having conductivity; and an upper portion provided above the basic portion and having conductivity. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a cross-sectional view schematically showing the configuration of a magnetic storage device according to an embodiment. [Figure 2] 3A and 3B are diagrams schematically showing a cross section perpendicular to the Z direction of a stacked structure and a boron-containing layer in the magnetic memory device according to the embodiment. [Figure 3] This is a diagram showing a cross section perpendicular to the Z direction of an electrode, an insulating portion of a lower insulating layer (an insulating portion provided in a region below the laminated structure), a metal-containing layer, and an extended portion of a boron-containing layer in a magnetic memory device according to an embodiment. [Figure 4] 1A to 1C are cross-sectional views schematically showing a part of a method for manufacturing a magnetic memory device according to an embodiment. [Figure 5] 1A to 1C are cross-sectional views schematically showing a part of a method for manufacturing a magnetic memory device according to an embodiment. [Figure 6] 1A to 1C are cross-sectional views schematically showing a part of a method for manufacturing a magnetic memory device according to an embodiment. [Figure 7] 1A to 1C are cross-sectional views schematically showing a part of a method for manufacturing a magnetic memory device according to an embodiment. [Figure 8] FIG. 1 is a perspective view schematically illustrating a configuration of an application example of a magnetic storage device according to an embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, an embodiment will be described with reference to the drawings.

[0008] FIG. 1 is a cross-sectional view schematically showing the configuration of a magnetic storage device according to an embodiment.

[0009] The magnetic memory device according to this embodiment is provided on a semiconductor substrate (not shown), and includes a plurality of stacked structures 10, a plurality of boron-containing layers 20, a lower structure 30, and an upper insulating layer .

[0010] A plurality of laminated structures 10 are provided on a lower structure 30 and are arranged in an array in the X and Y directions. Each laminated structure 10 has a structure in which a plurality of layers are stacked in the Z direction. The X, Y, and Z directions intersect with each other. Specifically, the X, Y, and Z directions are perpendicular to each other.

[0011] Each of the plurality of laminated structures 10 functions as an MTJ (Magnetic Tunnel Junction) element, which is a magnetoresistive effect element. Each laminated structure 10 includes a base portion 11, a lower portion 12, and an upper portion 13.

[0012] The basic portion 11 includes a storage layer (first magnetic layer) 11a, a reference layer (second magnetic layer) 11b, and a tunnel barrier layer (non-magnetic layer) 11c, and functions as a basic portion of the magnetoresistive effect element.

[0013] The memory layer 11a is a ferromagnetic layer having a variable magnetization direction. The variable magnetization direction means that the magnetization direction changes with a predetermined write current. The memory layer 11a contains at least one element selected from iron (Fe) and cobalt (Co). Specifically, the memory layer 11a is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B).

[0014] The reference layer 11b is a ferromagnetic layer having a fixed magnetization direction, and includes a first layer portion and a second layer portion stacked in the Z direction. The fixed magnetization direction means that the magnetization direction does not change with respect to a predetermined write current.

[0015] The first layer portion is provided on the side closer to the tunnel barrier layer 11c and contains at least one element selected from iron (Fe) and cobalt (Co). Specifically, the first layer portion is formed of an FeCoB layer containing iron (Fe), cobalt (Co), and boron (B).

[0016] The second layer portion is provided on the side farther from the tunnel barrier layer 11c and contains at least platinum (Pt). Specifically, the second layer portion has a superlattice structure in which multiple platinum (Pt) layers and multiple cobalt (Co) layers are alternately stacked.

[0017] The tunnel barrier layer 11c is an insulating layer provided between the storage layer 11a and the reference layer 11b. Specifically, the tunnel barrier layer 11c is formed of an MgO layer containing magnesium (Mg) and oxygen (O).

[0018] When the magnetization direction of the storage layer 11a is parallel to the magnetization direction of the reference layer 11b, the magnetoresistive element exhibits a low-resistance state with a relatively low resistance. When the magnetization direction of the storage layer 11a is antiparallel to the magnetization direction of the reference layer 11b, the magnetoresistive element exhibits a high-resistance state with a relatively high resistance. Therefore, the magnetoresistive element can store binary data according to its resistance state. The resistance state of the magnetoresistive element can be set according to the direction of the current flowing through the magnetoresistive element.

[0019] Although the basic part 11 of the magnetoresistive effect element shown in FIG. 1 has a top-free structure in which the memory layer 11a is located above the reference layer 11b, the basic part 11 may also have a bottom-free structure in which the memory layer 11a is located below the reference layer 11b.

[0020] The lower portion 12 of the multilayer structure 10 is provided below the base portion 11 and is conductive. The lower portion 12 is formed of a conductive material containing at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al). For example, the lower portion 12 may be formed of any one layer selected from Hf, W, Ti, and Al, or may be formed by stacking two or more layers selected from Hf, W, Ti, and Al. The lower portion 12 may also include a layer containing two or more elements selected from Hf, W, Ti, and Al. In this embodiment, at least the bottom portion of the lower portion 12 contains Hf.

[0021] The upper portion 13 of the stacked structure 10 is provided on the upper layer side of the basic portion 11 and is conductive. The upper portion 13 contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), and ruthenium (Ru). The upper portion 13 includes a hard mask portion 13a and an intermediate portion 13b.

[0022] The hard mask portion 13a is the uppermost layer of the multilayer structure 10 and functions as a hard mask when forming a pattern of the multilayer structure 10. The hard mask portion 13a is formed of a conductive material containing at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al). For example, the hard mask portion 13a may be formed of any one layer selected from Hf, W, Ti, and Al, or may be formed by stacking two or more layers selected from Hf, W, Ti, and Al. The hard mask portion 13a may also include a layer containing two or more elements selected from Hf, W, Ti, and Al within the same layer.

[0023] The intermediate portion 13b is provided between the base portion 11 and the hard mask portion 13a and is made of a conductive material, for example, a ruthenium (Ru) layer.

[0024] Each of the plurality of boron-containing layers 20 is provided on the side surface (sidewall) of each of the plurality of stacked structures 10. Specifically, each boron-containing layer 20 is provided so as to surround the side surface of each stacked structure 10. The boron-containing layer 20 is formed of an insulating material containing boron (B). Specifically, the boron-containing layer 20 is formed of boron nitride (BN) containing boron (B) and nitrogen (N).

[0025] The boron-containing layer 20 may be provided over the entire side surface of the stacked structure 10, or may be provided over a portion of the side surface of the stacked structure 10. However, the boron-containing layer 20 is preferably provided so as to surround the entire side surface of at least the basic portion 11 of the stacked structure 10. In this embodiment, the boron-containing layer 20 is provided continuously over the entire side surface of the stacked structure 10, including the basic portion 11, the lower portion 12, and the upper portion 13. The boron-containing layer 20 may further include an extension portion 20a extending to the upper portion of the lower structure 30.

[0026] 2 is a diagram schematically illustrating a cross section perpendicular to the Z direction of the stacked structure 10 and the boron-containing layer 20. As can be seen from FIG. 2, the pattern of the boron-containing layer 20 is provided so as to surround the circular pattern of the stacked structure 10.

[0027] The substructure 30 includes a lower insulating layer 31 , a plurality of electrodes 32 and a plurality of metal-containing layers 33 .

[0028] The lower insulating layer 31 functions as an interlayer insulating layer and includes a plurality of insulating portions 31a, each of which is provided in a region below the plurality of stacked structures 10, and insulating portions 31b, which are provided in a region outside the plurality of insulating portions 31a. Specifically, a pattern of insulating portions 31b is provided so as to surround the pattern of each insulating portion 31a. The insulating portion 31b has an upper surface that is lower than the upper surfaces of the plurality of insulating portions 31a. In other words, the insulating portion 31b is recessed relative to the plurality of insulating portions 31a. The lower insulating layer 31 is formed of an insulating material such as silicon oxide or silicon nitride.

[0029] Each of the multiple electrodes 32 is connected to the lower surface of each of the multiple laminate structures 10. That is, each electrode 32 is connected to the lower surface of the lower portion 12 of each laminate structure 10. The side surfaces of each electrode 32 are surrounded by each insulating portion 31a of the lower insulating layer 31.

[0030] Each of the plurality of metal-containing layers 33 is provided on the side surface of each of the plurality of insulating portions 31a. Specifically, each of the metal-containing layers 33 is provided so as to surround the side surface of the upper portion of each of the insulating portions 31a.

[0031] Each metal-containing layer 33 contains the metal element contained in each stacked structure 10. Specifically, the metal-containing layer 33 contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), iron (Fe), cobalt (Co), platinum (Pt), and ruthenium (Ru). In particular, the metal-containing layer 33 contains a relatively large proportion of Hf.

[0032] As previously mentioned, the boron-containing layer 20 may include extensions 20 a that extend onto the upper portion of the substructure 30 , in which case the extensions 20 a are provided on the sides of the metal-containing layer 33 .

[0033] Furthermore, no layer containing boron (B) is provided on the upper surface of insulating portion 31b of lower insulating layer 31 except for a portion near the outer edge of insulating portion 31b (excluding a portion near the boundary between insulating portion 31a and insulating portion 31b). That is, a portion containing boron (B) is provided on the upper surface of insulating portion 31b near the outer edge of insulating portion 31b.

[0034] 3 is a diagram schematically illustrating a cross section perpendicular to the Z direction of the electrode 32, the insulating portion 31a of the lower insulating layer 31, the metal-containing layer 33, and the extending portion 20a of the boron-containing layer 20. As can be seen from FIG. 3, the pattern of the insulating portion 31a of the lower insulating layer 31 is provided so as to surround the circular pattern of the electrode 32, the pattern of the metal-containing layer 33 is provided so as to surround the pattern of the insulating portion 31a, and the pattern of the extending portion 20a of the boron-containing layer 20 is provided so as to surround the pattern of the metal-containing layer 33.

[0035] The upper insulating layer 40 surrounds the side surfaces of each of the multiple structures, each of which includes the stacked structure 10 and the boron-containing layer 20. The upper insulating layer 40 also extends to the upper surface of the insulating portion 31b of the lower insulating layer 31. The upper insulating layer 40 functions as an interlayer insulating layer and is made of a material different from the material of the boron-containing layer 20. For example, the upper insulating layer 40 is made of an insulating material such as silicon oxide or silicon nitride.

[0036] As described above, in this embodiment, the boron-containing layer 20 is provided on the side surface of the multilayer structure 10. This makes it possible to electrically separate adjacent multilayer structures 10 accurately, as will be described below. In other words, it becomes possible to electrically separate adjacent magnetoresistive effect elements accurately.

[0037] Typically, when forming a pattern of the stacked structure 10, a hard mask is used as an etching mask, and the stacked film for the stacked structure 10 is etched by IBE (Ion Beam Etching) or the like. In this case, a metal-containing layer (residue layer) containing the metal element contained in the stacked film is formed in the region between adjacent stacked structures 10, which may impair electrical isolation between the adjacent stacked structures 10. In addition, a metal-containing layer (residue layer) may be formed on the side surface of the stacked structure 10, which may impair electrical isolation between the memory layer 11a and the reference layer 11b. In particular, if the lower portion 12 of the stacked structure 10 contains Hf, a metal-containing layer (residue layer) containing Hf is formed, making it difficult to accurately remove the metal-containing layer (residue layer) containing Hf.

[0038] In this embodiment, by providing the boron-containing layer 20 on the side surface of the laminated structure 10, it is possible to prevent the above-mentioned problems as will be described below.

[0039] When hafnium (Hf) generated by etching during patterning of the laminated structure 10 combines with oxygen in the interlayer insulating layer or in the atmosphere, hafnium oxide is formed. It is not easy to remove the metal-containing layer (residue layer) containing hafnium oxide by etching.

[0040] In this embodiment, the boron-containing layer 20 is formed after the stacked layer structure 10 is formed. Boron (B) is more easily oxidized than hafnium (Hf). That is, the bond between boron and oxygen is more stable than the bond between hafnium and oxygen. Therefore, when etching is performed after the boron-containing layer 20 is formed, oxygen in hafnium oxide in the metal-containing layer (residue layer) bonds with boron (B), and the hafnium oxide is reduced to hafnium (Hf). Because hafnium (Hf) is easier to etch than hafnium oxide, the metal-containing layer (residue layer) can be easily removed.

[0041] Therefore, in this embodiment, it is possible to electrically separate adjacent magnetoresistive elements (adjacent stacked structures 10) accurately.

[0042] Next, a method for manufacturing the magnetic memory device according to this embodiment will be described with reference to FIGS.

[0043] 4, a stacked film for the stacked structure 10 is formed on a structure including the lower insulating layer 31 and the electrode 32. Specifically, a lower partial layer 12s, a basic partial layer 11s (memory layer 11a, reference layer 11b, and tunnel barrier layer 11c), an intermediate partial layer 13bs, and a hard mask layer are formed. Furthermore, the hard mask layer is patterned to form a hard mask pattern 13ap.

[0044] Next, as shown in FIG. 5, the hard mask pattern 13ap is used as a mask to etch the intermediate partial layer 13bs, the basic partial layer 11s, and the lower partial layer 12s by IBE. At this time, the hard mask pattern 13ap is also etched, reducing the height (thickness) of the hard mask pattern 13ap. In this way, a pattern of the stacked structure 10 including the basic portion 11 (the memory layer 11a, the reference layer 11b, and the tunnel barrier layer 11c), the lower portion 12, and the upper portion 13 (the hard mask portion 13a and the intermediate portion 13b) is formed. In this etching process, overetching is performed to ensure physical separation of adjacent stacked structures 10. As a result, a portion of the lower insulating layer 31 is etched, forming a recess 31r. Furthermore, a metal-containing layer (residue layer) 33 containing the metal element contained in the stacked structure 10 is formed on the bottom and side surfaces of the recess 31r. The metal-containing layer (residue layer) 33 contains hafnium oxide and the like.

[0045] Next, as shown in Fig. 6, a boron-containing layer 20 is formed so as to cover the structure obtained in the step of Fig. 5. Specifically, a boron nitride (BN) layer is formed as the boron-containing layer 20.

[0046] Next, as shown in FIG. 7, the boron-containing layer 20 is anisotropically etched by RIE (Reactive Ion Etching). A gas containing chlorine (Cl) (e.g., Cl gas) is used as the etching gas. This anisotropic etching removes the boron-containing layer 20 formed on the upper surface of the stacked structure 10 and the bottom surface of the recess 31r of the lower insulating layer 31, leaving only the boron-containing layer 20 formed on the side surface of the stacked structure 10 and the side surface of the metal-containing layer 33. This anisotropic etching also removes the metal-containing layer 33 formed on the bottom surface of the recess 31r.

[0047] As described above, the metal-containing layer (residue layer) 33 contains hafnium oxide and the like. Boron (B) is more easily oxidized than hafnium (Hf), and the bond between boron and oxygen is more stable than the bond between hafnium and oxygen. Therefore, by forming the boron-containing layer 20 before performing the anisotropic etching described above, oxygen in the hafnium oxide bonds with boron, generating hafnium. As a result, the metal-containing layer (residue layer) 33 containing hafnium can be easily removed.

[0048] The etching gas may be a gas containing chlorine (Cl) and boron (B) (e.g., a mixed gas of Cl2 gas and BCl3 gas). By adding a gas containing boron (B), it is possible to further promote removal of the metal-containing layer (residue layer) 33 containing hafnium.

[0049] Thereafter, an upper insulating layer 40 is formed on the structure obtained in the step of FIG. 7, and the upper insulating layer 40 is planarized, thereby obtaining the structure shown in FIG.

[0050] As described above, according to the above-described manufacturing method, the metal-containing layer (residue layer) 33 can be easily removed by forming the boron-containing layer 20. Therefore, the above-described manufacturing method makes it possible to accurately electrically isolate adjacent magnetoresistive effect elements (adjacent stacked structures 10).

[0051] Next, an application example of the magnetic storage device of this embodiment will be described below. Fig. 8 is a perspective view showing a schematic configuration of an application example of the magnetic storage device of this embodiment.

[0052] The memory device shown in FIG. 8 includes a plurality of wirings 100, a plurality of wirings 200, and a plurality of memory cells 300 provided between the plurality of wirings 100 and the plurality of wirings 200.

[0053] Each of the plurality of wirings 100 extends in the X direction, and each of the plurality of wirings 200 extends in the Y direction. One of the wirings 100 and 200 corresponds to a word line, and the other of the wirings 100 and 200 corresponds to a bit line.

[0054] Each of the plurality of memory cells 300 includes a magnetoresistive element 400 and a selector (switching element) 500, and has a structure in which the magnetoresistive element 400 and the selector 500 are stacked in the Z direction. That is, each memory cell 300 has a structure in which the magnetoresistive element 400 and the selector 500 are connected in series.

[0055] The basic structure of the magnetoresistive element 400 corresponds to the structure shown in the above-described embodiment (the structure including the stacked structure 10 and the boron-containing layer 20, etc.). The selector 500 is a two-terminal switching element, and has the property of transitioning from an off state to an on state when the voltage applied between the two terminals reaches a threshold voltage.

[0056] When a voltage is applied between the wiring 100 and the wiring 200 and the voltage applied to the selector 500 reaches or exceeds the threshold voltage, the selector 500 transitions from the off state to the on state. As a result, a current flows through the magnetoresistive element 400 connected in series to the selector 500, making it possible to write to or read from the magnetoresistive element 400.

[0057] By applying the magnetic storage device of this embodiment to a storage device such as that shown in FIG. 8, it is possible to obtain a storage device with excellent characteristics and reliability.

[0058] The memory device shown in FIG. 8 has a structure in which the magnetoresistive effect element 400 is located on the upper layer side of the selector 500, but may also have a structure in which the magnetoresistive effect element 400 is located on the lower layer side of the selector 500.

[0059] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0060] 10…Laminated structure 11…Basic part 11a...Memory layer (first magnetic layer) 11b...Reference layer (second magnetic layer) 11c...Tunnel barrier layer (non-magnetic layer) 12…lower part 13...upper portion 13a...hard mask portion 13b...middle portion 20...boron-containing layer 20a...extension portion 30... Lower structure 31... Lower insulating layer 31a...insulating portion (first insulating portion, second insulating portion) 31b...insulating portion (third insulating portion) 32...Electrode 33...Metal-containing layer 40...Upper insulating layer 100, 200...Wiring 300...Memory cell 400...Magnetoresistive element 500...Selector (switching element)

Claims

1. The substructure and a first laminate structure disposed on the lower structure; a second stacked structure disposed on the lower structure and adjacent to the first stacked structure; a first boron-containing layer provided on a side surface of the first stacked structure and containing boron (B); a second boron-containing layer provided on a side surface of the second stacked structure and containing boron (B); A magnetic storage device comprising: Each of the first and second laminated structures comprises: a base portion including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer; a lower portion provided below the base portion and having electrical conductivity; an upper portion provided on an upper layer side of the base portion and having electrical conductivity; Contains A magnetic storage device characterized by:

2. The first and second boron-containing layers further contain nitrogen (N).

2. The magnetic storage device according to claim 1.

3. The first magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co).

2. The magnetic storage device according to claim 1.

4. The second magnetic layer contains at least one element selected from iron (Fe) and cobalt (Co).

2. The magnetic storage device according to claim 1.

5. The second magnetic layer further contains platinum (Pt).

5. The magnetic storage device according to claim 4.

6. The non-magnetic layer contains magnesium (Mg) and oxygen (O).

2. The magnetic storage device according to claim 1.

7. The lower portion contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), and aluminum (Al).

2. The magnetic storage device according to claim 1.

8. The upper portion contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), and ruthenium (Ru).

2. The magnetic storage device according to claim 1.

9. the lower structure includes a lower insulating layer; The lower insulating layer is a first insulating portion provided in a region below the first stacked structure; a second insulating portion provided in a region below the second stacked structure; a third insulating portion provided in an area outside the first insulating portion and the second insulating portion and having an upper surface lower than an upper surface of the first insulating portion and an upper surface of the second insulating portion; Contains 2. The magnetic storage device according to claim 1.

10. The substructure comprises: a first electrode connected to a lower surface of the first laminated structure and having a side surface surrounded by the first insulating portion; a second electrode connected to the lower surface of the second laminated structure and having a side surface surrounded by the second insulating portion; Also includes 10. The magnetic storage device according to claim 9.

11. The substructure comprises: a first metal-containing layer provided on a side surface of the first insulating portion and containing at least one metal element contained in the first stacked structure; a second metal-containing layer provided on a side surface of the second insulating portion and containing at least one metal element contained in the second stacked structure; Also includes 10. The magnetic storage device according to claim 9.

12. the first boron-containing layer includes a first extension portion provided on a side surface of the first metal-containing layer; The second boron-containing layer includes a second extension portion provided on a side surface of the second metal-containing layer.

12. The magnetic storage device according to claim 11.

13. Each of the first and second metal-containing layers contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), iron (Fe), cobalt (Co), platinum (Pt), and ruthenium (Ru).

12. The magnetic storage device according to claim 11.

14. No layer containing boron (B) is provided on the upper surface of the third insulating portion except for a portion near the outer edge of the third insulating portion.

14. The magnetic storage device according to claim 13.

15. an upper insulating layer surrounding a side surface of the structure including the first stacked structure and the first boron-containing layer and surrounding a side surface of the structure including the second stacked structure and the second boron-containing layer; 2. The magnetic storage device according to claim 1.

16. forming a laminated film on a structure including a lower insulating layer, the laminated film including a basic partial layer including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a non-magnetic layer provided between the first magnetic layer and the second magnetic layer, a lower partial layer provided below the basic partial layer and having conductivity, and an upper partial layer provided above the basic partial layer and having conductivity; patterning a hard mask layer included in the upper partial layer to form a hard mask pattern; performing etching using the hard mask pattern as a mask to form a stacked structure including patterns of the base partial layer, the lower partial layer, and the upper partial layer, and forming a recess in the lower insulating layer; forming a boron-containing layer containing boron (B) so as to cover a structure obtained by etching using the hard mask pattern as a mask; Etching the boron-containing layer to remove the boron-containing layer formed on the top surface of the stacked structure and the bottom surface of the recess, and leaving the boron-containing layer formed on the side surface of the stacked structure; 10. A method for manufacturing a magnetic storage device, comprising:

17. The boron-containing layer further contains nitrogen (N).

17. The method for manufacturing a magnetic storage device according to claim 16.

18. when etching is performed using the hard mask pattern as a mask, a metal-containing layer containing the metal element contained in the laminate structure is formed on a bottom surface of the recess; When the boron-containing layer is etched, the metal-containing layer formed on the bottom surface of the recess is removed.

17. The method for manufacturing a magnetic storage device according to claim 16.

19. when etching is performed using the hard mask pattern as a mask, the metal-containing layer is formed on the side surface of the recess in addition to the bottom surface of the recess, When the boron-containing layer is etched, the metal-containing layer formed on the side surface of the recess remains.

20. The method for manufacturing a magnetic storage device according to claim 18.

20. The metal-containing layer contains at least one element selected from hafnium (Hf), tungsten (W), titanium (Ti), aluminum (Al), iron (Fe), cobalt (Co), platinum (Pt), and ruthenium (Ru).

20. The method for manufacturing a magnetic storage device according to claim 18.

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