Light-emitting device, light-emitting module, and method of manufacturing light-emitting device

Abstract

To enlarge an area of a semiconductor structure and an area of an electrode.SOLUTION: A light-emitting element comprises an inner light-emitting part including an inner semiconductor structure and an inner electrode and an outer light-emitting part enclosing an entire circumference of the inner light-emitting part in a planar view and including an outer semiconductor structure and an outer electrode. On a light-emitting surface of a light-emitting device, the inner semiconductor structure and the outer semiconductor structure are on an outermost surface. The outer electrode comprises: a first outer electrode including a first extension part extending along a first outer edge and a second extension part extending along one of a third outer edge and a fourth outer edge; and a second outer electrode including a third extension part extending along a second edge and a fourth extension part extending along the other of the third outer edge and the fourth outer edge. In the planar view, a first clearance is positioned between an end of the first extension part and an end of the fourth extension part, and a second clearance is positioned between an end of the second extension part and an end of the third extension part.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a light emitting device, a light emitting module, and a method for manufacturing a light emitting device. [Background technology]

[0002] 2. Description of the Related Art A light emitting device is known which is obtained by disposing an element substrate having a plurality of light emitting portions on a support member and then removing the element substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Chinese Patent Application Publication No. 102117821 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a light emitting device, a light emitting module, and a method for manufacturing a light emitting device that can increase the area of ​​a semiconductor structure and the area of ​​an electrode. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, a light emitting device includes a support member and a rectangular light emitting element disposed on the support member and having, in a plan view, first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction, wherein the light emitting element includes an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located on the opposite side of the inner light emitting surface, and positive and negative inner electrodes arranged on the inner electrode surfaces, an outer semiconductor structure surrounding the entire periphery of the inner light emitting portion in a plan view and having an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes arranged on the outer electrode surfaces. and an outer light-emitting portion including a side electrode, and the inner semiconductor structure and the outer semiconductor structure are the outermost surfaces on the light-emitting surface, and the positive and negative outer electrodes include a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge, and a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge, and in a planar view, a first gap is located between an end of the first extension portion and an end of the fourth extension portion, and a second gap is located between an end of the second extension portion and an end of the third extension portion.

[0006] According to one aspect of the present disclosure, a light emitting device includes: a support member; and a rectangular light emitting element disposed on the support member and having, in a plan view, first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction, wherein the light emitting element includes an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located on the opposite side of the inner light emitting surface, and positive and negative inner electrodes arranged on the inner electrode surfaces; and an outer light emitting portion surrounding the entire periphery of the inner light emitting portion in a plan view, and including an outer semiconductor structure having an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes arranged on the outer electrode surfaces. the outer semiconductor structure is the outermost surface, the outer electrode has a first outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge, and a second outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge, the inner electrode has a first inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge, and a second inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge, the first outer electrode and the first inner electrode are arranged between the second outer electrode and the second inner electrode in a planar view, and the support member has one common wiring portion commonly joined to the first outer electrode and the first inner electrode.

[0007] According to one aspect of the present disclosure, a light-emitting module comprises the light-emitting device described above, wherein the inner light-emitting portion includes a rectangular central light-emitting portion that is located at the center of the inner light-emitting portion and irradiates light onto a central region in an illumination area, and lenses arranged on the inner light-emitting surface and the outer light-emitting surface of the light-emitting device, wherein the amount of change in the light distribution angle of the central light-emitting portion caused by the lens is greater than the amount of change in the light distribution angle of the outer light-emitting portion caused by the lens.

[0008] According to one aspect of the present disclosure, a method for manufacturing a light emitting device includes the steps of: preparing a structure including: an element substrate having a first surface and a second surface opposite to the first surface; and a rectangular light emitting element disposed on the second surface of the element substrate, the rectangular light emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction in a plan view; arranging the structure on a support member such that the second surface faces the support member; and separating the element substrate from the light emitting element after arranging the structure on the support member. In the step of preparing the structure, the light emitting element has an inner light emitting surface and a light emitting element opposite the inner light emitting surface. the semiconductor structure includes an inner light-emitting portion having an inner semiconductor structure with inner electrode surfaces located on opposite sides and positive and negative inner electrodes arranged on the inner electrode surfaces; an outer semiconductor structure that surrounds the entire periphery of the inner light-emitting portion in a planar view and has an outer light-emitting surface and outer electrode surfaces located on the opposite side of the outer light-emitting surface; and positive and negative outer electrodes arranged on the outer electrode surfaces, wherein the outer electrodes include a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge; and a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge. [Effects of the Invention]

[0009] According to the present disclosure, it is possible to provide a light emitting device, a light emitting module, and a method for manufacturing a light emitting device that can increase the area of ​​the semiconductor structure and the area of ​​the electrode. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a schematic plan view of a light emitting device according to a first embodiment. [Figure 2] FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. [Figure 3] FIG. 2 is a schematic plan view of a light emitting element in the light emitting device according to the first embodiment. [Figure 4]FIG. 2 is a schematic plan view of a support member in the light emitting device according to the first embodiment. [Figure 5] FIG. 2 is a schematic plan view of a support member in the light emitting device according to the first embodiment. [Figure 6] FIG. 2 is a schematic plan view of a light emitting element in the light emitting device according to the first embodiment. [Figure 7] FIG. 1 is a schematic plan view of a light emitting device according to a first embodiment. [Figure 8] FIG. 1 is a schematic plan view of a light emitting device according to a first embodiment. [Figure 9] FIG. 1 is a schematic plan view of a light emitting device according to a first embodiment. [Figure 10] FIG. 10 is a schematic plan view of a light emitting element in a light emitting device according to a second embodiment. [Figure 11] FIG. 4 is a schematic cross-sectional view of a light emitting device according to a second embodiment. [Figure 12] FIG. 10 is a schematic plan view of a support member in the light emitting device according to the second embodiment. [Figure 13] 1 is a schematic cross-sectional view of a light-emitting module according to an embodiment. [Figure 14A] FIG. 10 is a schematic cross-sectional view of a light-emitting module according to a first modified example. [Figure 14B] FIG. 10 is a schematic cross-sectional view of a light-emitting module according to a second modified example. [Figure 14C] FIG. 11 is a schematic cross-sectional view of a light-emitting module according to a third modified example. [Figure 14D] FIG. 10 is a schematic plan view of a light-emitting module according to a fourth modified example. [Figure 14E] FIG. 14D is a schematic cross-sectional view taken along line XIVE-XIVE in FIG. [Figure 14F] FIG. 10 is a schematic plan view of a light-emitting module according to a fourth modified example. [Figure 14G] FIG. 14B is a schematic cross-sectional view taken along line XIVG-XIVG in FIG. 14F. [Figure 15A] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15B] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15C] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15D] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15E] FIG. 2 is a schematic plan view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15F] FIG. 2 is a schematic plan view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15G] FIG. 2 is a schematic plan view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15H] FIG. 2 is a schematic plan view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15I] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 15J] FIG. 2 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the first embodiment. [Figure 16A] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 16B] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 16C] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 16D] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. [Figure 16E] FIG. 10 is a schematic cross-sectional view illustrating one step of the method for manufacturing the light emitting device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. The embodiments shown below are illustrative of embodiments for embodying the technical concepts of the present disclosure and are not limited thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of components described in the embodiments are not intended to limit the scope of the present disclosure, but are merely illustrative examples. Note that the size, positional relationship, etc. of components shown in each drawing may be exaggerated for clarity. Furthermore, in the following description, the same names and symbols indicate the same or similar components, and detailed description will be omitted as appropriate. Furthermore, as cross-sectional views, end views showing only the cut surface may be used.

[0012] In the following description, terms indicating specific directions or positions (e.g., "above," "below," and other terms including these terms) may be used. However, these terms are used merely to facilitate understanding of relative directions or positions in the referenced drawings. As long as the relative direction or position relationship indicated by terms such as "above" and "below" in the referenced drawings is the same, the arrangement in drawings other than those disclosed herein, actual products, etc., does not need to be the same as in the referenced drawings. In this specification, the positional relationship expressed as "above (or below)" includes, for example, when two components are assumed to exist, a case in which the two components are in contact with each other, and a case in which the two components are not in contact with each other and one component is located above (or below) the other component. Furthermore, in this specification, unless otherwise specified, a component covering an object to be covered includes a case in which the component is in contact with the object to be covered and directly covers it, and a case in which the component is not in contact with the object to be covered and indirectly covers it. Furthermore, in this specification, the width, distance, and thickness of a component in a specific direction refer to the maximum width, distance, and thickness, respectively, in the specific direction. In the embodiments, the term "planar view" refers to viewing an object from above. In this specification, the term "planar view" may be used to describe not only a portion that can be directly viewed from above, but also a portion that cannot be directly viewed from above, as if it were visible through the object.

[0013] In the figures shown below, directions may be indicated by the X-axis, Y-axis, and Z-axis. The direction along the X-axis (for example, the first direction X) indicates a predetermined direction within the light-emitting surface of the light-emitting device according to the embodiment. The direction along the Y-axis (for example, the second direction Y) indicates a direction perpendicular to the first direction X within the light-emitting surface. The light-emitting surface of the light-emitting device is parallel to the XY plane. The direction along the Z-axis (for example, the third direction Z) indicates a direction perpendicular to the light-emitting surface of the light-emitting device.

[0014] [Light-emitting device according to the first embodiment] A light emitting device 1 according to a first embodiment will be described with reference to FIGS.

[0015] The light emitting device 1 according to the first embodiment includes a support member 200 and a light emitting element 100 arranged on the support member 200.

[0016] <Light-emitting element> 1 and 3, in a plan view, the outer edge of the light-emitting element 100 has a rectangular shape having a first outer edge 101 and a second outer edge 102 extending in a first direction X and a third outer edge 103 and a fourth outer edge 104 extending in a second direction Y. FIG. 1 is a plan view of the light-emitting surface side of the light-emitting element 100. FIG. 3 is a plan view of the surface side opposite to the light-emitting surface of the light-emitting element 100. In this embodiment, the light-emitting surface of the light-emitting element 100 refers to the main light extraction surface.

[0017] The light emitting element 100 has an inner light emitting portion 20 and an outer light emitting portion 10 that surrounds the entire periphery of the inner light emitting portion 20 in a plan view.

[0018] (Outer light emitting part) The outer light emitting portion 10 has an outer semiconductor structure 11 and positive and negative outer electrodes 12, 13. A current is supplied to the outer semiconductor structure 11 through the positive and negative outer electrodes 12, 13, causing the outer semiconductor structure 11 to emit light.

[0019] As shown in FIG. 2 , the outer semiconductor structure 11 has an outer light-emitting surface 11A and an outer electrode surface 11B located on the opposite side of the outer light-emitting surface 11A in the third direction Z. As shown in FIG. 3 , in a plan view, the outer edges of the outer semiconductor structure 11 form a first outer edge 101, a second outer edge 102, a third outer edge 103, and a fourth outer edge 104 of the light-emitting element 100. In a plan view, the outer semiconductor structure 11 is provided in a frame shape along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100. The outer light-emitting surface 11A has a rectangular ring shape along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. For example, when multiple semiconductor structures are spaced apart from each other and arranged along the outer edges of the light-emitting element, no light-emitting surface exists between the semiconductor structures. In contrast, in this embodiment, outer semiconductor structure 11 has a continuously connected frame shape, so that the area of ​​outer light emitting surface 11A of outer semiconductor structure 11 can be increased, and the light output of outer light emitting unit 10 can be improved.

[0020] As shown in FIG. 3, the outer electrodes (12, 13) are disposed on the outer electrode surface 11B of the outer semiconductor structure 11. The outer electrodes include a first outer electrode 12 and a second outer electrode 13. For example, the first outer electrode 12 is a cathode electrode in the outer light emitting section 10, and the second outer electrode 13 is an anode electrode in the outer light emitting section 10. The number of outer electrodes (12, 13) is not limited to two, and may be three or more. Examples of materials that can be used for the outer electrodes include Ti, Pt, and Au.

[0021] The first outer electrode 12 has a first extension portion 12A extending along the first outer edge 101 and a second extension portion 12B extending along one of the third outer edge 103 and the fourth outer edge 104. The second outer electrode 13 has a third extension portion 13A extending along the second outer edge 102 and a fourth extension portion 13B extending along the other of the third outer edge 103 and the fourth outer edge 104. In this embodiment, the first outer electrode 12 has the first extension portion 12A extending along the first outer edge 101 and the second extension portion 12B extending along the third outer edge 103. The second outer electrode 13 has the third extension portion 13A extending along the second outer edge 102 and the fourth extension portion 13B extending along the fourth outer edge 104.

[0022] The first extension portion 12A and the second extension portion 12B of the first outer electrode 12 are continuous, and the third extension portion 13A and the fourth extension portion 13B of the second outer electrode 13 are continuous. In the example shown in FIG. 3 , the first extension portion 12A and the second extension portion 12B are continuous with a corner like an L-shape. The third extension portion 13A and the fourth extension portion 13B are continuous with a corner like an L-shape. The length of each of the first extension portion 12A and the third extension portion 13A in the first direction X is, for example, not less than 1000 μm and not more than 4000 μm. The length of each of the first extension portion 12A and the third extension portion 13A in the second direction Y is, for example, not less than 50 μm and not more than 300 μm. The length of each of the second extension portion 12B and the fourth extension portion 13B in the first direction X is, for example, not less than 50 μm and not more than 300 μm. The length of each of the second extension portion 12B and the fourth extension portion 13B in the second direction Y is, for example, not less than 1300 μm and not more than 5200 μm. Note that the lengths of the first extension portion 12A, the second extension portion 12B, the third extension portion 13A, and the fourth extension portion 13B refer to the lengths of the outer edges that are adjacent to each other along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 in each extension portion and are farther from the center of the light-emitting element 100 in a planar view.

[0023] The first outer electrode 12 and the second outer electrode 13 may have chamfered corners in a plan view, as long as they are joined to the support member 200 and electrically connected.

[0024] In a plan view, a first gap g1 is located between an end of the first extending portion 12A and an end of the fourth extending portion 13B, and a second gap g2 is located between an end of the second extending portion 12B and an end of the third extending portion 13A. The first gap g1 and the second gap g2 separate the positive and negative outer electrodes (anode and cathode electrodes) from each other on the outer electrode surface 11B of the outer semiconductor structure 11.

[0025] In a plan view, the end of the first extension portion 12A and the end of the fourth extension portion 13B are spaced apart in the first direction X by a first gap g1. Alternatively, the end of the first extension portion 12A and the end of the fourth extension portion 13B may be spaced apart in the second direction Y by the first gap g1. The width of the first gap g1 along the first direction X or the second direction Y is, for example, 50 μm or more and 300 μm or less. In this embodiment, the closer the width of the first gap g1 in the first direction X is to 50 μm, the larger the planar area of ​​the outer electrode can be, and high heat dissipation performance can be obtained. Furthermore, the closer the width of the first gap g1 in the first direction X is to 300 μm, the more resistance to migration improves, and migration can be reduced even when driving at a high voltage. In addition, the same effect as above can be achieved even when the end of the first extension portion 12A and the end of the fourth extension portion 13B are positioned 50 μm or more and 300 μm or less apart in the second direction Y with the first gap g1 between them.

[0026] In a plan view, the end of the second extension portion 12B and the end of the third extension portion 13A are spaced apart in the first direction X by the second gap g2. Alternatively, the end of the second extension portion 12B and the end of the third extension portion 13A may be spaced apart in the second direction Y by the second gap g2. The width of the second gap g2 along the first direction X or the second direction Y is, for example, 50 μm or more and 300 μm or less. In this embodiment, the closer the width of the second gap g2 in the first direction X is to 50 μm, the larger the planar area of ​​the outer electrode can be, and high heat dissipation performance can be obtained. Furthermore, the closer the width of the second gap g2 in the first direction X is to 300 μm, the more resistance to migration improves, and migration can be reduced even when driving at a high voltage. In addition, the same effect as above can be achieved even when the end of the second extension portion 12B and the end of the third extension portion 13A are positioned 50 μm or more and 300 μm or less apart in the second direction Y with the second gap g2 between them.

[0027] The outer semiconductor structure 11 is provided in a frame shape along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light emitting element 100 in a plan view, and the outer electrode surface 11B is arranged along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. This allows the outer electrodes 12, 13 to extend along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104, thereby increasing the areas of the outer electrodes 12, 13. Heat generated by the outer semiconductor structure 11 as it emits light is dissipated to the support member 200 through the outer electrodes 12, 13. The increased areas of the outer electrodes 12, 13 can improve the heat dissipation efficiency of the heat generated by the outer semiconductor structure 11.

[0028] The length in the first direction X of the first stretched portion 12A is preferably 3 / 4 or more, and more preferably 4 / 5 or more, of the length of the first outer edge 101. The length in the second direction Y of the second stretched portion 12B is preferably 4 / 5 or more, and more preferably 9 / 10 or more, of the length of the third outer edge 103. The length in the first direction X of the third stretched portion 13A is preferably 3 / 4 or more, and more preferably 4 / 5 or more, of the length of the second outer edge 102. The length in the second direction Y of the fourth stretched portion 13B is preferably 4 / 5 or more, and more preferably 9 / 10 or more, of the length of the fourth outer edge 104.

[0029] As shown in a modified example in FIG. 6 , the first outer electrode 12 and the second outer electrode 13 may have a third gap g3 between the end of the first extension portion 12A and the end of the second extension portion 12B in a plan view. Alternatively, a fourth gap g4 may be between the end of the third extension portion 13A and the end of the fourth extension portion 13B in a plan view. For example, in a plan view, the end of the first extension portion 12A and the end of the second extension portion 12B are spaced apart in the second direction Y by the third gap g3. The end of the third extension portion 13A and the end of the fourth extension portion 13B are spaced apart in the second direction Y by the fourth gap g4. Alternatively, in a plan view, the end of the first extension portion 12A and the end of the second extension portion 12B may be spaced apart in the first direction X by the third gap g3. Furthermore, the end of the third extending portion 13A and the end of the fourth extending portion 13B may be spaced apart in the first direction X with a fourth gap g4 therebetween.

[0030] The ratio (L2 / L1) of the length L2 of the outer electrodes 12, 13 in the direction along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 to the length L1 in the direction along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the outer electrode surface 11B of the outer semiconductor structure 11 is preferably 0.8 or more. Furthermore, L2 / L1 is more preferably 0.9 or more. Setting such a length ratio makes it easy to increase the area of ​​the outer electrodes 12, 13 on the outer electrode surface 11B. L1 represents the total length of a center line passing through the centers in the second direction Y of two extension portions extending in the first direction X of the outer electrode surface 11B of the outer semiconductor structure 11 and a center line passing through the centers in the first direction X of two extension portions extending in the second direction Y of the outer electrode surface 11B. L2 represents the total length of the center line passing through the center of the first extension portion 12A in the second direction Y, the center line passing through the center of the second extension portion 12B in the first direction X, the center line passing through the center of the third extension portion 13A in the second direction Y, and the center line passing through the center of the fourth extension portion 13B in the first direction X.

[0031] In the configuration shown in Figure 3, L1 can be set to 8.15 mm, and the width of each of the first gap g1 and second gap g2 in the first direction X can be set to 0.15 mm. In the configuration shown in Figure 3, L2 = 8.15 - (0.15 x 2) = 7.85 mm. The ratio (L2 / L1) is 0.963.

[0032] In the configuration shown in Figure 6, L1 can be set to 8.15 mm, and the widths of the first gap g1, second gap g2, third gap g3, and fourth gap g4 in the second direction Y can be set to 0.15 mm. In the configuration shown in Figure 6, L2 = 8.15 - (0.15 x 4) = 7.55 mm. The ratio (L2 / L1) is 0.926.

[0033] If the length L1 of the outer electrode surface 11B is the same, the configuration shown in Figure 3, which has a smaller gap between the extensions of the outer electrode, can increase the ratio (L2 / L1) and the area of ​​the outer electrodes 12 and 13 compared to the configuration shown in Figure 6.

[0034] (Inner light emitting part) The inner light-emitting unit 20 includes at least one of a frame-shaped light-emitting unit that is frame-shaped along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 in a plan view, and a rectangular central light-emitting unit that is located in the center of the inner light-emitting unit 20. In this embodiment, the inner light-emitting unit 20 includes a frame-shaped inner light-emitting unit 30 and a central light-emitting unit 40. The frame-shaped inner light-emitting unit 30 is an example of a frame-shaped light-emitting unit. The inner light-emitting unit 20 is not limited to including both the frame-shaped inner light-emitting unit 30 and the central light-emitting unit 40, and may include only one of the frame-shaped inner light-emitting unit 30 and the central light-emitting unit 40. The inner light-emitting unit 20 is not limited to including only one frame-shaped inner light-emitting unit 30, and may include two or more frame-shaped light-emitting units.

[0035] When multiple light-emitting sections are provided, the light-emitting section arranged on the outermost side in a planar view may be referred to as an outer light-emitting section, and one or more light-emitting sections arranged inside the outer light-emitting section may be referred to as inner light-emitting sections.

[0036] (Frame-shaped inner light-emitting part) The frame-shaped inner light-emitting portion 30 surrounds the entire periphery of the central light-emitting portion 40 in a plan view and is located between the outer light-emitting portion 10 and the central light-emitting portion 40. The frame-shaped inner light-emitting portion 30 is located at a distance from the outer light-emitting portion 10 and the central light-emitting portion 40 in the first direction X. The frame-shaped inner light-emitting portion 30 is located at a distance from the outer light-emitting portion 10 and the central light-emitting portion 40 in the second direction Y. The separation distance between the frame-shaped inner light-emitting portion 30 and the outer light-emitting portion 10 in the first direction X, the separation distance between the frame-shaped inner light-emitting portion 30 and the central light-emitting portion 40 in the first direction X, the separation distance between the frame-shaped inner light-emitting portion 30 and the outer light-emitting portion 10 in the second direction Y, and the separation distance between the frame-shaped inner light-emitting portion 30 and the central light-emitting portion 40 in the second direction Y are, for example, 1 μm or more and 30 μm or less.

[0037] The frame-shaped inner light-emitting portion 30 has a frame-shaped inner semiconductor structure 31 and positive and negative inner electrodes (32, 33). Current is supplied to the frame-shaped inner semiconductor structure 31 through the positive and negative inner electrodes (32, 33), causing the frame-shaped inner semiconductor structure 31 to emit light.

[0038] As shown in FIG. 2 , the frame-shaped inner semiconductor structure 31 has a frame-shaped inner light-emitting surface 31A and a frame-shaped inner electrode surface 31B located on the opposite side of the frame-shaped inner light-emitting surface 31A in the third direction Z. As shown in FIG. 3 , in a plan view, the frame-shaped inner semiconductor structure 31 has a rectangular ring shape that follows the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100. The frame-shaped inner light-emitting surface 31A also has a rectangular ring shape that follows the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. For example, if multiple semiconductor structures are spaced apart and arranged along the outer edge of the light-emitting element, no light-emitting surface exists between the semiconductor structures. In contrast, in this embodiment, the frame-shaped inner semiconductor structure 31 has a continuously connected frame shape, so the area of ​​the frame-shaped inner light-emitting surface 31A of the frame-shaped inner semiconductor structure 31 can be increased, and the light output of the frame-shaped inner light-emitting unit 30 can be improved.

[0039] The inner electrodes (32, 33) are disposed on the frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31. The inner electrodes include a first inner electrode 32 and a second inner electrode 33. For example, the first inner electrode 32 is a cathode electrode in the frame-shaped inner light-emitting portion 30, and the second inner electrode 33 is an anode electrode in the frame-shaped inner light-emitting portion 30. The number of inner electrodes (32, 33) is not limited to two, and there may be three or more. Examples of materials that can be used for the inner electrodes include Ti, Pt, and Au.

[0040] The first inner electrode 32 has a fifth extension portion 32A extending along the first extension portion 12A of the first outer electrode 12 and a sixth extension portion 32B extending along the second extension portion 12B of the first outer electrode 12. The second inner electrode 33 has a seventh extension portion 33A extending along the third extension portion 13A of the second outer electrode 13 and an eighth extension portion 33B extending along the fourth extension portion 13B of the second outer electrode 13. The fifth extension portion 32A and the sixth extension portion 32B are continuous with a corner like an L-shape. The seventh extension portion 33A and the eighth extension portion 33B are continuous with a corner like an L-shape. The length of each of the fifth extension portion 32A and the seventh extension portion 33A in the first direction X is, for example, not less than 500 μm and not more than 3000 μm. The length of each of the fifth extension portion 32A and the seventh extension portion 33A in the second direction Y is, for example, not less than 50 μm and not more than 300 μm. The length of each of the sixth extension portion 32B and the eighth extension portion 33B in the first direction X is, for example, not less than 50 μm and not more than 300 μm. The length of each of the sixth extension portion 32B and the eighth extension portion 33B in the second direction Y is, for example, not less than 650 μm and not more than 3900 μm. The lengths of the fifth extension portion 32A, the sixth extension portion 32B, the seventh extension portion 33A, and the eighth extension portion 33B refer to the length of the outer edge of each extension portion that is along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 and that is farther from the center of the light emitting element 100 in a planar view. In addition, in this embodiment, the lengths of the fifth extension portion 32A, the sixth extension portion 32B, the seventh extension portion 33A, and the eighth extension portion 33B can also be said to be the lengths of the outer edges of each extension portion that are adjacent to each other along the first extension portion 12A, the second extension portion 12B, the third extension portion 13A, and the fourth extension portion 13B, and that are farthest from the center of the light-emitting element 100 in a planar view.

[0041] The first inner electrode 32 and the second inner electrode 33 may have chamfered corners in a plan view, as long as they are joined to the support member 200 and electrically connected.

[0042] In a plan view, a fifth gap g5 is located between an end of the fifth extension portion 32A and an end of the eighth extension portion 33B, and a sixth gap g6 is located between an end of the sixth extension portion 32B and an end of the seventh extension portion 33A. The fifth gap g5 and the sixth gap g6 separate the positive and negative inner electrodes (anode and cathode electrodes) from each other on the frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31.

[0043] In a plan view, the end of the fifth extension portion 32A and the end of the eighth extension portion 33B are spaced apart in the first direction X by a fifth gap g5. Alternatively, the end of the fifth extension portion 32A and the end of the eighth extension portion 33B may be spaced apart in the second direction Y by the fifth gap g5. The width of the fifth gap g5 along the first direction X or the second direction Y is, for example, 50 μm or more and 300 μm or less. In this embodiment, the closer the width of the fifth gap g5 in the first direction X is to 50 μm, the larger the planar area of ​​the outer electrode can be, and high heat dissipation performance can be obtained. Furthermore, the closer the width of the fifth gap g5 in the first direction X is to 300 μm, the more resistance to migration improves, and migration can be reduced even when driving at a high voltage. In addition, the same effect as described above can be achieved even when the end of the fifth extension portion 32A and the end of the eighth extension portion 33B are positioned 50 μm or more and 300 μm or less apart in the second direction Y via the fifth gap g5.

[0044] In a plan view, the end of the sixth extension portion 32B and the end of the seventh extension portion 33A are spaced apart in the first direction X by a sixth gap g6. Alternatively, the end of the sixth extension portion 32B and the end of the seventh extension portion 33A may be spaced apart in the second direction Y by the sixth gap g6. The width of the sixth gap g6 along the first direction X or the second direction Y is, for example, 50 μm or more and 300 μm or less. In this embodiment, the closer the width of the sixth gap g6 in the first direction X is to 50 μm, the larger the planar area of ​​the outer electrode can be, and high heat dissipation performance can be obtained. Furthermore, the closer the width of the sixth gap g6 in the first direction X is to 300 μm, the more resistance to migration improves, and migration can be reduced even when driving at a high voltage. In addition, the same effect as above can be achieved even when the end of the sixth extension portion 32B and the end of the seventh extension portion 33A are positioned 50 μm or more and 300 μm or less apart in the second direction Y via the sixth gap g6.

[0045] The frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31 is provided in a frame shape along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100. This allows the inner electrodes (32, 33) to extend along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104, thereby increasing the area of ​​the inner electrodes (32, 33). Heat generated by the frame-shaped inner semiconductor structure 31 as it emits light is dissipated to the support member 200 through the inner electrodes (32, 33). The increased area of ​​the inner electrodes (32, 33) improves the heat dissipation performance of the heat generated by the frame-shaped inner semiconductor structure 31.

[0046] 6 , the first inner electrode 32 and the second inner electrode 33 may have a seventh gap g7 located between the end of the fifth extension portion 32A and the end of the sixth extension portion 32B, and an eighth gap g8 located between the end of the seventh extension portion 33A and the end of the eighth extension portion 33B, in a plan view. For example, in a plan view, the end of the fifth extension portion 32A and the end of the sixth extension portion 32B are spaced apart in the second direction Y by the seventh gap g7, and the end of the seventh extension portion 33A and the end of the eighth extension portion 33B are spaced apart in the second direction Y by the eighth gap g8. Alternatively, in a plan view, the end of the fifth extension portion 32A and the end of the sixth extension portion 32B may be spaced apart in the first direction X by a seventh gap g7, and the end of the seventh extension portion 33A and the end of the eighth extension portion 33B may be spaced apart in the first direction X by an eighth gap g8.

[0047] (Central light emitting part) In a plan view, the central light emitting portion 40 has a rectangular shape. The central light emitting portion 40 has a central inner semiconductor structure 41 and positive and negative inner electrodes (42, 43). A current is supplied to the central inner semiconductor structure 41 through the positive and negative inner electrodes (42, 43), causing the central inner semiconductor structure 41 to emit light.

[0048] As shown in FIG. 2, the central inner semiconductor structure 41 has a central inner light emitting surface 41A and a central inner electrode surface 41B located on the opposite side of the central inner light emitting surface 41A in the third direction Z.

[0049] The inner electrodes (42, 43) are arranged on the central inner electrode surface 41B of the central inner semiconductor structure 41. The inner electrodes include a third inner electrode 42 and a fourth inner electrode 43. For example, the third inner electrode 42 is a cathode electrode in the central light emitting portion 40, and the fourth inner electrode 43 is an anode electrode in the central light emitting portion 40. The third inner electrode 42 and the fourth inner electrode 43 are positioned apart from each other in the second direction Y, for example. The third inner electrode 42 and the fourth inner electrode 43 may be positioned apart from each other in the first direction X. The inner electrodes may include three or more electrodes.

[0050] In this embodiment, the positive and negative outer electrodes (12, 13) and the positive and negative inner electrodes (32, 33, 42, 43) are arranged so as to be rotationally symmetrical with respect to the center of the light-emitting element 100 as the central axis in a planar view. For example, as shown in Fig. 3, the positive and negative inner electrodes (32, 33, 42, 43) are located on an imaginary line L connecting the first gap g1 and the second gap g2 in a planar view. Note that the positive and negative inner electrodes (32, 33, 42, 43) do not necessarily have to be located on the imaginary line L connecting the first gap g1 and the second gap g2.

[0051] It should be noted that the number and positions of gaps in the outer electrode and inner electrode are not limited to the examples shown in Figures 3 and 6. Furthermore, when there are two or more gaps, the distance between the gaps is not limited to the examples shown in Figures 3 and 6. The number, positions, and distance between the gaps may be adjusted as appropriate, taking into consideration heat dissipation, etc.

[0052] The outer semiconductor structure 11 and the inner semiconductor structure (the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41) are the outermost surfaces of the light-emitting surface of the light-emitting element 100. No element substrate used to grow the semiconductor structures is disposed on the outer light-emitting surface 11A of the outer semiconductor structure 11 or on the inner light-emitting surfaces (the frame-shaped inner light-emitting surface 31A and the central inner light-emitting surface 41A) of the inner semiconductor structure. Therefore, the light-emitting device 1 of this embodiment does not suffer from light absorption loss in the element substrate.

[0053] The outer light emitting surface 11A of the outer semiconductor structure 11 and the inner light emitting surface of the inner semiconductor structure include roughened surface portions. The arithmetic mean roughness of the roughened surface portions is, for example, 0.5 μm or more and 10 μm or less. The roughened surface portions can improve the light extraction efficiency from the light emitting surface of the light emitting element 100. The outer semiconductor structure 11 or the inner semiconductor structure (the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41) may further include a protective film that protects the light emitting surface of the light emitting element 100. Note that the outer light emitting surface 11A of the outer semiconductor structure 11 and the inner light emitting surface of the inner semiconductor structure do not need to have roughened surface portions.

[0054] In the outer semiconductor structure 11 and the inner semiconductor structure (the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41), the thickness of the semiconductor structure in the third direction Z is, for example, 5 μm or more and 100 μm or less. The thinner the thickness of the semiconductor structure in the third direction Z, the more the propagation of light inside the semiconductor structure is reduced, so the thickness of the semiconductor structure in the third direction Z is preferably 5 μm or more and 20 μm or less. The semiconductor structure includes a nitride semiconductor. The nitride semiconductor is, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula represented by N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. Furthermore, nitride semiconductors also include those in the above chemical formula that further contain a Group V element other than N (nitrogen), and those that further contain various elements added to control various physical properties such as the semiconductor conductivity type. The semiconductor structure includes an active layer. The active layer is a light-emitting layer that emits light, and has, for example, an MQW (Multiple Quantum Well) structure including multiple barrier layers and multiple well layers. The light emitted by the active layer is, for example, visible light or ultraviolet light.

[0055] <Supporting member> 2, the support member 200 has an insulating base material 201 and a wiring portion. The support member 200 supports the light emitting element 100 and also functions as a wiring substrate that electrically connects the light emitting element 100 to an external circuit. As shown in FIG. 4, in this embodiment, the support member 200 has a rectangular shape in a plan view, but is not limited to this.

[0056] The thickness of the insulating base material 201 in the third direction Z is, for example, not less than 100 μm and not more than 500 μm. The insulating base material 201 can be made of, for example, resin or ceramic. If the insulating base material 201 is made of ceramic, the heat dissipation of the light emitting device 1 can be improved compared to when a resin is used. The ceramic material for the insulating base material 201 can be, for example, aluminum nitride or silicon nitride. The insulating base material 201 has a first wiring surface 201A and a second wiring surface 201B located on the opposite side of the first wiring surface 201A in the third direction Z.

[0057] As shown in Figure 4, the wiring portion has a first outer wiring portion 212, a second outer wiring portion 213, a first inner wiring portion 232, a second inner wiring portion 233, a third inner wiring portion 242, and a fourth inner wiring portion 243 arranged on the first wiring surface 201A.

[0058] 2, each wiring portion on the first wiring surface 201A is bonded and electrically connected to each electrode of the light emitting element 100 via a bonding member 90. For example, a gold bump or a gold-tin alloy can be used as the bonding member 90.

[0059] The first outer wiring portion 212 extends in the first direction X and the second direction Y on the first wiring surface 201A and has an L-shape with corners. The first outer electrode 12 of the outer light-emitting portion 10 is joined to and electrically connected to the first outer wiring portion 212.

[0060] The second outer wiring portion 213 is separated from the first outer wiring portion 212 on the first wiring surface 201A. The second outer wiring portion 213 extends in the first direction X and the second direction Y and has an L-shape with corners. The second outer electrode 13 of the outer light-emitting portion 10 is joined to and electrically connected to the second outer wiring portion 213.

[0061] The first inner wiring portion 232 and the second inner wiring portion 233 are located on the first wiring surface 201A inside the first outer wiring portion 212 and the second outer wiring portion 213. The first inner wiring portion 232 extends in the first direction X and the second direction Y on the first wiring surface 201A and has an L-shape with corners. The first inner electrode 32 of the frame-shaped inner light-emitting portion 30 is joined to and electrically connected to the first inner wiring portion 232.

[0062] The second inner wiring portion 233 is separated from the first inner wiring portion 232 on the first wiring surface 201A. The second inner wiring portion 233 extends in the first direction X and the second direction Y and has an L-shape with corners. The second inner electrode 33 of the frame-shaped inner light-emitting portion 30 is joined to and electrically connected to the second inner wiring portion 233.

[0063] In addition, the first outer wiring portion 212, the second outer wiring portion 213, the first inner wiring portion 232 and the second inner wiring portion 233 do not have to have a shape with corners when viewed in a plane, as long as they are joined to and electrically connected to each electrode of the light-emitting element 100.

[0064] The third inner wiring portion 242 and the fourth inner wiring portion 243 are located inside the first inner wiring portion 232 and the second inner wiring portion 233 on the first wiring surface 201A. The third inner wiring portion 242 and the fourth inner wiring portion 243 are located, for example, spaced apart in the second direction Y on the first wiring surface 201A. The third inner electrode 42 of the central light-emitting portion 40 is joined to and electrically connected to the third inner wiring portion 242. The fourth inner electrode 43 of the central light-emitting portion 40 is joined to and electrically connected to the fourth inner wiring portion 243. The third inner wiring portion 242 and the fourth inner wiring portion 243 may be located spaced apart in the first direction X on the first wiring surface 201A as long as they are joined to and electrically connected to the third inner electrode 42 and the fourth inner electrode 43.

[0065] 4 corresponds one-to-one to each electrode of the light-emitting element 100, and the shape of each wiring portion in FIG. 4 is similar to the shape of each electrode of the light-emitting element 100. This allows the light-emitting element 100 to be easily positioned due to a self-alignment effect while the bonding member 90 is melting and solidifying.

[0066] 2, the wiring portion further includes a wiring portion arranged on the second wiring surface 201B. The wiring portion arranged on the first wiring surface 201A and the wiring portion arranged on the second wiring surface 201B are electrically connected via a conductive via or the like that penetrates the insulating substrate 201. The wiring portion and the conductive via may be made of, for example, copper.

[0067] The wiring portions arranged on the second wiring surface 201B include a third outer wiring portion 214, a fourth outer wiring portion 215, a fifth inner wiring portion 234, a sixth inner wiring portion 235, a seventh inner wiring portion 244, and an eighth inner wiring portion 245. The third outer wiring portion 214 is electrically connected to the first outer wiring portion 212. The fourth outer wiring portion 215 is electrically connected to the second outer wiring portion 213. The fifth inner wiring portion 234 is electrically connected to the first inner wiring portion 232. The sixth inner wiring portion 235 is electrically connected to the second inner wiring portion 233. The seventh inner wiring portion 244 is electrically connected to the third inner wiring portion 242. The eighth inner wiring portion 245 is electrically connected to the fourth inner wiring portion 243.

[0068] As shown in FIGS. 3 and 6 , the first inner electrode 32 and the first outer electrode 12 are adjacent to each other in the first direction X and the second direction Y and have the same polarity (in this embodiment, the polarity to which a cathode potential is applied). In such an arrangement of the first inner electrode 32 and the first outer electrode 12, the first inner electrode 32 and the first outer electrode 12 can be connected to a common wiring portion provided on the first wiring surface 201A of the support member 200. As shown in FIG. 5 , the support member 200 can be configured to have one common wiring portion 252 on the first wiring surface 201A, which is commonly joined to the first inner electrode 32 and the first outer electrode 12 of one light-emitting element 100. The first inner electrode 32 and the first outer electrode 12 are joined to the common wiring portion 252, and the same potential (cathode potential) is applied to the first inner electrode 32 and the first outer electrode 12 through the common wiring portion 252. Compared to a configuration in which the wiring portions connected to the first inner electrode 32 and the first outer electrode 12 are arranged separately from each other (the configuration of Figure 4), the use of a common wiring portion 252 allows the area of ​​the wiring portion to be increased, thereby further improving heat dissipation.

[0069] The light emitting device 1 can independently control the lighting of each of the outer light emitting unit 10, the frame-shaped light emitting unit (frame-shaped inner light emitting unit 30), and the central light emitting unit 40. For example, by adjusting the power supplied to each of the outer light emitting unit 10, the frame-shaped light emitting unit (frame-shaped inner light emitting unit 30), and the central light emitting unit 40 depending on the area to be irradiated with light, it is possible to control whether the light is turned on or off, or the intensity of the light emitted.

[0070] <Wavelength conversion material> 2, the light emitting device 1 may further include a wavelength conversion member 300 disposed on the outer light emitting surface 11A of the outer light emitting unit 10 and on the inner light emitting surfaces (frame-shaped inner light emitting surface 31A and central inner light emitting surface 41A) of the inner light emitting unit 20. For ease of explanation, in FIG. 1, 7, 8, or 9, the wavelength conversion member 300 is represented by dot hatching to easily distinguish between the semiconductor structure and the wavelength conversion member 300.

[0071] The wavelength converting member 300 converts the wavelength of at least a part of the light emitted by the outer light emitting unit 10 and the inner light emitting unit 20 (more specifically, the light emitted by the outer semiconductor structure 11 and the inner semiconductor structure). The light emitting device 1 emits light that is a mixture of the light emitted by the outer light emitting unit 10 and the inner light emitting unit 20 and the light whose wavelength has been converted by the wavelength converting member 300.

[0072] In this embodiment, the wavelength conversion member 300 has a phosphor layer 301 arranged on the outer light-emitting surface 11A of the outer light-emitting unit 10 and on the inner light-emitting surfaces (frame-shaped inner light-emitting surface 31A and central inner light-emitting surface 41A) of the inner light-emitting unit 20, a light-diffusing layer 302 arranged on the phosphor layer 301, and a light-transmitting layer 303 arranged on the light-diffusing layer 302. It is sufficient that the wavelength conversion member 300 has at least the phosphor layer 301.

[0073] The phosphor layer 301 includes, for example, a resin base material and a wavelength converting substance. The resin base material of the phosphor layer 301 can be made of a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, an epoxy-modified resin, or a phenolic resin. Among these, a silicone resin or a modified resin thereof is particularly suitable, as it has excellent light resistance and heat resistance.

[0074] The wavelength conversion material of the phosphor layer 301 is, for example, an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16(Cl2:Eu), silicate phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), etc. oxynitride phosphors, LSN phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr,Ca)AlSiN3:Eu), etc. nitride phosphors, KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1.), or fluoride phosphors such as MGF phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2), etc. can be used. The phosphor layer 301 may contain one type of wavelength conversion material or may contain a plurality of types of wavelength conversion materials.

[0075] The light diffusion layer 302 diffuses the light emitted by the outer light emitting part 10 and the inner light emitting part 20 and the light wavelength-converted by the phosphor layer 301. The light diffusion layer 302 can contain, for example, the resin base material exemplified in the phosphor layer 301 and a light diffusion material. As the light diffusion material contained in the light diffusion layer 302, for example, titanium oxide or silicon oxide can be used.

[0076] The light-transmitting layer 303 may contain, for example, the resin base material exemplified for the phosphor layer 301. The light-transmitting layer 303 does not contain a light-diffusing material. The light-transmitting layer 303 has a higher transmittance than the light-diffusing layer 302 for the light emitted by the outer light-emitting unit 10 and the inner light-emitting unit 20 and for the light whose wavelength has been converted by the phosphor layer 301.

[0077] The wavelength conversion member 300 is bonded to the outer light-emitting surface 11A of the outer light-emitting unit 10 and the inner light-emitting surface of the inner light-emitting unit 20 by an adhesive layer. The adhesive layer is translucent to the light emitted by the outer light-emitting unit 10 and the inner light-emitting unit 20 so that the light emitted by the outer light-emitting unit 10 and the inner light-emitting unit 20 can be incident on the wavelength conversion member 300. The adhesive layer can be made of a thermoplastic resin such as an acrylic resin, a polycarbonate resin, a cyclic polyolefin resin, a polyethylene terephthalate resin, or a polyester resin, or a thermosetting resin such as an epoxy resin or a silicone resin.

[0078] Alternatively, the wavelength conversion member 300 may be directly bonded to the outer light-emitting surface 11A of the outer light-emitting unit 10 and the inner light-emitting surface of the inner light-emitting unit 20. In other words, no adhesive layer is disposed between the wavelength conversion member 300 and the light-emitting surfaces of the outer light-emitting unit 10 and the inner light-emitting unit 20. This allows light emitted from any of the light-emitting units, the outer light-emitting unit 10, the frame-shaped inner light-emitting unit 30, and the central light-emitting unit 40, to propagate through the adhesive layer and spread laterally (along the XY plane), reducing the amount of light emitted toward the other light-emitting units. This allows a light-emitting device with high contrast (the ratio of brightness between a lit light-emitting unit and an unlit light-emitting unit).

[0079] In the example shown in FIG. 1, the wavelength conversion member 300 may have an outer wavelength conversion member 300A arranged on the outer light-emitting portion 10, an inner wavelength conversion member 300B arranged on the frame-shaped inner light-emitting portion 30, and a central wavelength conversion member 300C arranged on the central light-emitting portion 40.

[0080] In plan view, the outer wavelength conversion member 300A has a frame-like shape similar to the outer light-emitting section 10. In plan view, the inner wavelength conversion member 300B is located inside the outer wavelength conversion member 300A, and has a frame-like shape similar to the frame-shaped inner light-emitting section 30. In plan view, the central wavelength conversion member 300C is located inside the inner wavelength conversion member 300B, and has a rectangular shape similar to the outer edge of the central light-emitting section 40.

[0081] The width in the first direction X of the outer wavelength conversion member 300A is smaller than the width in the first direction X of the outer light-emitting surface 11A of the outer light-emitting unit 10, and the width in the second direction Y of the outer wavelength conversion member 300A is smaller than the width in the second direction Y of the outer light-emitting surface 11A.

[0082] The width in the first direction X of the inner wavelength conversion member 300B is smaller than the width in the first direction X of the frame-shaped inner light-emitting surface 31A of the frame-shaped inner light-emitting unit 30, and the width in the second direction Y of the inner wavelength conversion member 300B is smaller than the width in the second direction Y of the frame-shaped inner light-emitting surface 31A.

[0083] The width in the first direction X of the central wavelength conversion member 300C is smaller than the width in the first direction X of the central inner light-emitting surface 41A of the central light-emitting unit 40, and the width in the second direction Y of the central wavelength conversion member 300C is smaller than the width in the second direction Y of the central inner light-emitting surface 41A.

[0084] The separation distance in the first direction X between the outer wavelength conversion member 300A and the inner wavelength conversion member 300B and the separation distance in the first direction X between the inner wavelength conversion member 300B and the central wavelength conversion member 300C is, for example, 10 μm or more and 200 μm or less. The separation distance in the second direction Y between the outer wavelength conversion member 300A and the inner wavelength conversion member 300B and the separation distance in the second direction Y between the inner wavelength conversion member 300B and the central wavelength conversion member 300C is, for example, 10 μm or more and 200 μm or less.

[0085] The outer wavelength conversion member 300A and the inner wavelength conversion member 300B may be connected in the first direction X and the second direction Y to form a single frame-shaped wavelength conversion member 300D arranged on the outer light-emitting unit 10 and the frame-shaped inner light-emitting unit 30, as shown in Fig. 7. In this case, two light-emitting units (the outer light-emitting unit 10 and the frame-shaped inner light-emitting unit 30) are arranged under one wavelength conversion member 300, so the gap between the two light-emitting units can be made inconspicuous when the two light-emitting units are turned on or off. Furthermore, the number of wavelength conversion members 300 arranged on one light-emitting element 100 is smaller than in the example shown in Fig. 1, which makes it easier to manufacture the light-emitting device 1.

[0086] 8, one wavelength conversion member 300 may be arranged continuously in the first direction X and the second direction Y on the outer light-emitting unit 10, the frame-shaped inner light-emitting unit 30, and the central light-emitting unit 40. In this case, three light-emitting units (the outer light-emitting unit 10, the frame-shaped inner light-emitting unit 30, and the central light-emitting unit 40) are arranged under one wavelength conversion member 300, so that the intervals between the three light-emitting units can be made less noticeable when the three light-emitting units are turned on or off. Furthermore, since only one wavelength conversion member 300 is arranged on one light-emitting element 100, manufacturing is further facilitated.

[0087] 9, a plurality of wavelength conversion members 300 each having a rectangular shape in a plan view may be arranged side by side in the first direction X and the second direction Y. In the example shown in Fig. 9, 25 wavelength conversion members 300 are arranged in a 5x5 matrix.

[0088] <First resin member> As shown in FIG. 2 , the light emitting device 1 may further include a first resin member 60. The first resin member 60 is disposed on the first wiring surface 201A of the insulating base material 201, and is located between the outer light emitting unit 10 and the frame-shaped inner light emitting unit 30, and between the frame-shaped inner light emitting unit 30 and the central light emitting unit 40. The first resin member 60 is located between the outer electrode surface 11B of the outer semiconductor structure 11 and the first wiring surface 201A, between the frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31 and the first wiring surface 201A, and between the central inner electrode surface 41B of the central inner semiconductor structure 41 and the first wiring surface 201A. The first resin member 60 covers the side surfaces of each light emitting unit, the side surfaces of each wiring unit on the first wiring surface 201A, and the side surface of the bonding member 90. The first resin member 60 is not disposed on the light emitting surface of each light emitting unit, and the light emitting surface of each light emitting unit and the upper surface of the first resin member 60 are on the same XY plane.

[0089] The first resin member 60 has insulating properties. The first resin member 60 has optical reflectivity for the light emitted by the outer light-emitting section 10 and the inner light-emitting section 20. The first resin member 60 may contain, for example, a resin base material exemplified as the phosphor layer 301 and a light-diffusing material. The resin base material of the first resin member 60 is preferably a silicone resin or a silicone-modified resin, which has excellent light resistance and heat resistance. The light-diffusing material may be, for example, titanium oxide or silicon oxide.

[0090] By disposing the light-reflective first resin member 60 between each light-emitting section, when one of the outer light-emitting section 10, the frame-shaped inner light-emitting section 30, and the central light-emitting section 40 emits light and the other light-emitting sections do not emit light, it is possible to reduce the amount of light emitted from one light-emitting section being irradiated onto the non-emitting light-emitting section. This allows the light-emitting device 1 to have high contrast.

[0091] The first resin member 60 is located outside the outer light-emitting section 10 in a plan view, and covers the outermost surface on the outer edge side of the outer light-emitting section 10. This reduces the amount of light emitted outside the outer light-emitting section 10, reduces light loss, and allows the light-emitting device 1 to have high contrast.

[0092] <Second resin member> The light emitting device 1 may further include a second resin member 70. The wavelength conversion member 300 is held by the second resin member 70. In this embodiment, a plurality of wavelength conversion members 300 are integrally held by the second resin member 70.

[0093] The second resin member 70 is disposed on the first resin member 60. The second resin member 70 is disposed between the wavelength conversion members 300 adjacent to each other in the horizontal direction. In the example shown in FIG. 1, the second resin member 70 is disposed between the outer wavelength conversion member 300A and the inner wavelength conversion member 300B, and between the inner wavelength conversion member 300B and the central wavelength conversion member 300C. The second resin member 70 covers the side surfaces of each wavelength conversion member 300. The second resin member 70 is not disposed on the upper surface of each wavelength conversion member 300, and the upper surfaces of each wavelength conversion member 300 are exposed from the second resin member 70. In the example shown in FIG. 2, the upper surface of the second resin member 70 and the upper surfaces of the wavelength conversion members 300 are on the same XY plane, and the light-emitting surface of the light emitting device 1 includes the upper surfaces of the wavelength conversion members 300.

[0094] The second resin member 70 has optical reflectivity for the light emitted by the outer light-emitting unit 10 and the inner light-emitting unit 20, and for the light whose wavelength has been converted by the wavelength conversion member 300. The second resin member 70 can have a configuration similar to that of the first resin member 60, for example.

[0095] By disposing the light-reflective second resin member 70 between adjacent wavelength conversion members 300, the lateral propagation of light between the outer wavelength conversion member 300A, the inner wavelength conversion member 300B, and the central wavelength conversion member 300C (hereinafter, these may be referred to as wavelength conversion members (300A, 300B, 300C)), as described below, can be reduced, resulting in a light emitting device with high contrast. For example, when one of the outer light emitting unit 10, the frame-shaped inner light emitting unit 30, and the central light emitting unit 40 emits light and the other light emitting units do not, the light emitted from one light emitting unit is incident on the wavelength conversion member 300 on the non-emitting light emitting unit, which reduces the emission of the wavelength conversion material contained in the wavelength conversion member 300 on the non-emitting light emitting unit. This reduces the emission of the wavelength conversion material contained in the wavelength conversion member 300 on the non-emitting light emitting unit. This allows the light emitting device 1 to have high contrast.

[0096] The second resin member 70 is located outside the outer wavelength conversion member 300A in plan view, and covers the outermost surface on the outer edge side of the outer wavelength conversion member 300A. This makes it possible to reduce light emission to the outside of the outer wavelength conversion member 300A, reduce light loss, and provide a light emitting device 1 with high contrast.

[0097] In this embodiment, the light emitting device 1 has the light diffusion layer 302, so that when the light emitting device 1 is viewed from the light emitting surface side in the non-emitting state, the external color of the wavelength conversion member 300 and the external color of the second resin member 70 can be made closer to each other, and the light emitting device can have an excellent external appearance in the non-emitting state with reduced color difference between the wavelength conversion member 300 and the second resin member 70. The concentration of the light diffusing material in the light diffusion layer 302 is preferably lower than the concentration of the light diffusing material in the second resin member 70. This makes it easier to extract light from the wavelength conversion member 300.

[0098] <Third resin member> The light emitting device 1 may further include a third resin member 80. The third resin member 80 is disposed in a peripheral region on the first wiring surface 201A of the insulating base material 201. The light emitting section and the wavelength conversion member 300 are not disposed in the peripheral region. The third resin member 80 covers the upper surface and side surfaces of the first resin member 60 and the side surfaces of the second resin member 70 in the peripheral region.

[0099] The third resin member 80 has optical reflectivity for light emitted by the outer light-emitting unit 10 and the inner light-emitting unit 20, and for light whose wavelength has been converted by the wavelength conversion member 300. The third resin member 80 may have, for example, the same configuration as the first resin member 60. Note that the first resin member 60, the second resin member 70, and the third resin member 80 may differ in the type, content, etc. of at least one of their constituent components.

[0100] The third resin member 80 can further reduce the amount of light emitted to the outside of the light emitting device 1, reducing light loss and providing a light emitting device 1 with high contrast.

[0101] As described above, the light emitting device 1 has a resin member 81 including a first resin member 60, a second resin member 70, and a third resin member 80. In this embodiment, the first resin member 60, the second resin member 70, and the third resin member 80 have the same configuration, but even if the type, content, etc. of at least one of these components is different, the first resin member 60, the second resin member 70, and the third resin member 80 can be collectively regarded as the resin member 81. Note that in the resin member 81, the first resin member 60, the second resin member 70, and the third resin member 80 may not necessarily be clearly distinguished from one another.

[0102] [Light-emitting device according to the second embodiment] A light emitting device 2 according to the second embodiment will be described with reference to FIGS. 10 to 12. Similar to the first embodiment, a plan view of the light emitting surface side of the light emitting device 2 according to the second embodiment is shown in FIG. 1, 7, 8, or 9. For example, the cross section shown in FIG. 11 corresponds to the cross section taken along line II-II in FIG. 1. In FIG. 10, the electrodes are represented by dotted hatching to facilitate distinction between the electrodes and the semiconductor structure. In FIG. 12, the wiring portion is represented by dotted hatching to facilitate explanation of the wiring portion region. The light emitting device 2 according to the second embodiment differs from the light emitting device 1 according to the first embodiment mainly in the configurations of the outer electrode and the inner electrode.

[0103] The light emitting device 2 includes a support member 200 and a light emitting element 100 disposed on the support member 200. The light emitting element 100 has an inner light emitting portion 20 and an outer light emitting portion 10. On the light emitting surface of the light emitting element 100, the inner semiconductor structure (the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41) and the outer semiconductor structure 11 are the outermost surfaces.

[0104] The following describes the light emitting device 2 according to the second embodiment, focusing on the differences in configuration from the light emitting device 1 according to the first embodiment.

[0105] 10 , the outer electrode includes a first outer electrode 14 and a second outer electrode 15 disposed on the outer electrode surface 11B of the outer semiconductor structure 11. The first outer electrode 14 is a cathode electrode in the outer light emitting part 10, and the second outer electrode 15 is an anode electrode in the outer light emitting part 10.

[0106] In a plan view, the first outer electrode 14 has a rectangular frame shape that is continuous along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. In a plan view, the second outer electrode 15 has a rectangular frame shape that is continuous along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. The first outer electrode 14 is disposed inside the second outer electrode 15 on the outer electrode surface 11B of the outer semiconductor structure 11. Note that the plan view shapes of the first outer electrode 14 and the second outer electrode 15 may be rectangular shapes with chamfered corners, and are not limited to rectangular shapes as long as they are continuous in a frame shape.

[0107] The inner electrode has a first inner electrode 34 and a second inner electrode 35 arranged on the frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31. The first inner electrode 34 is a cathode electrode in the frame-shaped inner light-emitting portion 30, and the second inner electrode 35 is an anode electrode in the frame-shaped inner light-emitting portion 30.

[0108] In a plan view, the first inner electrode 34 has a rectangular frame shape that is continuous along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. In a plan view, the second inner electrode 35 has a rectangular frame shape that is continuous along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. The second inner electrode 35 is disposed inside the first inner electrode 34 on the frame-shaped inner electrode surface 31B of the frame-shaped inner semiconductor structure 31. Note that the plan view shapes of the first inner electrode 34 and the second inner electrode 35 may be rectangular shapes with chamfered corners, and are not limited to rectangular shapes as long as they are continuous in a frame shape.

[0109] The inner electrodes include a third inner electrode 42 and a fourth inner electrode 43 arranged on the central inner electrode surface 41B of the central inner semiconductor structure 41. In a plan view, the third inner electrode 42 and the fourth inner electrode 43 are located inside the second inner electrode 35. The third inner electrode 42 is a cathode electrode in the central light-emitting portion 40, and the fourth inner electrode 43 is an anode electrode in the central light-emitting portion 40. The third inner electrode 42 and the fourth inner electrode 43 are located apart from each other in, for example, the second direction Y. The third inner electrode 42 and the fourth inner electrode 43 may also be located apart from each other in the first direction X.

[0110] The area of ​​each electrode can be increased by forming each of the outer electrodes (14, 15) and the inner electrodes (34, 35) into a continuous frame shape along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. This improves the heat dissipation of the light emitting device 2.

[0111] In a plan view, the first outer electrode 14 and the first inner electrode 34 are disposed between the second outer electrode 15 and the second inner electrode 35. The first outer electrode 14, which is the cathode electrode in the outer light-emitting part 10, and the first inner electrode 34, which is the cathode electrode in the frame-shaped inner light-emitting part 30, are positioned adjacent to each other in the first direction X and the second direction Y.

[0112] 12, the support member 200 has one common wiring portion 260. The common wiring portion 260 is disposed on the first wiring surface 201A of the insulating base material 201. In a plan view, the common wiring portion 260 has a rectangular frame shape. The first outer electrode 14 and the first inner electrode 34 of one light-emitting element 100 are joined to the common wiring portion 260.

[0113] The first outer electrode 14 and the first inner electrode 34 of the light emitting element 100, which are positioned adjacent to each other in a plan view and to which the same polarity (cathode potential) is applied, are joined and electrically connected to a common wiring portion 260. Compared to a configuration in which the wiring portions connected to the first outer electrode 14 and the first inner electrode 34, respectively, are arranged separately from each other, in this embodiment, by using the common wiring portion 260, the area of ​​the wiring portion can be increased, and heat dissipation can be improved.

[0114] The support member 200 further includes an outer wiring portion 261 and an inner wiring portion 262 disposed on the first wiring surface 201A of the insulating base material 201. In a plan view, the outer wiring portion 261 and the inner wiring portion 262 each have a rectangular frame shape. In a plan view, the common wiring portion 260 is located between the outer wiring portion 261 and the inner wiring portion 262.

[0115] The second outer electrode 15 of the outer light-emitting portion 10 is joined to and electrically connected with the outer wiring portion 261. The second inner electrode 35 of the frame-shaped inner light-emitting portion 30 is joined to and electrically connected with the inner wiring portion 262.

[0116] The planar shapes of the common wiring portion 260, the outer wiring portion 261, and the inner wiring portion 262 may be rectangular with chamfered corners, and are not limited to rectangular as long as they are continuous in a frame shape.

[0117] The support member 200 further has a third inner wiring portion 242 and a fourth inner wiring portion 243 arranged on the first wiring surface 201A of the insulating base material 201. The third inner wiring portion 242 and the fourth inner wiring portion 243 are located inside the inner wiring portion 262 on the first wiring surface 201A. The third inner wiring portion 242 and the fourth inner wiring portion 243 are located apart from each other in the second direction Y on the first wiring surface 201A, for example. Alternatively, the third inner wiring portion 242 and the fourth inner wiring portion 243 may be located apart from each other in the first direction X on the first wiring surface 201A.

[0118] The third inner electrode 42 of the central light-emitting portion 40 is joined to and electrically connected with the third inner wiring portion 242. The fourth inner electrode 43 of the central light-emitting portion 40 is joined to and electrically connected with the fourth inner wiring portion 243.

[0119] [Light-emitting module] The light emitting module according to the embodiment will be described with reference to FIG.

[0120] 13 includes the light emitting device 1 according to the first embodiment described above, and lenses 402 disposed on the inner and outer light emitting surfaces of the light emitting device 1. Note that the light emitting module 400 may include the light emitting device 2 according to the second embodiment instead of the light emitting device 1.

[0121] The light-emitting module 400 also includes a mounting substrate 401. The mounting substrate 401 has an upper surface, and the light-emitting device 1 is disposed on the upper surface of the mounting substrate 401. The mounting substrate 401 has a circuit section to which power is supplied from a power source. A wiring section disposed on the second wiring surface 201B of the support member 200 of the light-emitting device 1 is electrically connected to the circuit section of the mounting substrate 401. Note that in the schematic diagram showing the light-emitting module, the circuit section included in the mounting substrate 401 is omitted to avoid complicating the drawing.

[0122] The lens 402 has a lens portion 403 and a lens support portion 404 that supports the lens portion 403. The lens portion 403 and the lens support portion 404 are integrally formed. The lens support portion 404 is disposed on the mounting substrate 401 via an adhesive member. An air layer 405 is interposed between the light emitting device 1 and the lens 402. The lens 402 is formed from a resin such as polycarbonate resin, acrylic resin, epoxy resin, or silicone resin, or from glass. The lens portion 403 is a biconvex lens. A central axis c1 of the lens portion 403 extends in the first direction Z. In a plan view, the central axis c1 of the lens portion 403 overlaps with the center of the light emitting device 1. In this embodiment, the center of the light emitting device 1 coincides with the center of the central light emitting portion 40.

[0123] A light emitting module 400 including the light emitting device 1 can be used, for example, as a flash light source for an imaging device. The imaging device can be mounted, for example, on a mobile communication terminal. As described above with reference to FIG. 1 and other figures, in the light emitting device 1, the inner light emitting unit 20 includes a rectangular central light emitting unit 40 located at the center of the inner light emitting unit 20. When the light emitting module 400 is used as a flash light source for an imaging device to capture an image, the central light emitting unit 40 irradiates light onto a central region of the light irradiation area. Generally, the range of a scene captured in a captured image is rectangular, and the light emitting module 400 can irradiate light by switching between, for example, a narrow-angle mode in which only the central light emitting unit 40 emits light, and a wide-angle mode in which all light emitting units, including the central light emitting unit 40, the frame-shaped light emitting unit, and the outer light emitting unit 10, emit light. The narrow-angle mode has a narrower light irradiation angle than the wide-angle mode. The light emitting device 1 can control the turning on or off of each of the light emitting units, the outer light emitting unit 10, the frame-shaped light emitting unit (the frame-shaped inner light emitting unit 30), and the central light emitting unit 40, in accordance with the narrow-angle mode and the wide-angle mode, which makes it possible to take photographs according to the shooting mode of the imaging device, such as telephoto or close-up. Also, in the wide-angle mode, the illumination angle can be adjusted by controlling the light emission intensity of each light emitting unit.

[0124] In the light-emitting module 400 shown in FIG. 13 , the change in the light distribution angle of the central light-emitting unit 40 due to the lens 402 is greater than the change in the light distribution angle of the outer light-emitting units 10 due to the lens 402. This is because the distance between the central light-emitting unit 40 and the central axis c1 of the lens 402 is smaller than the distance between the outer light-emitting unit 10 and the central axis c1 of the lens 402. In this specification, the change in light distribution angle refers to the absolute value of the difference between the light distribution angle of light emitted from the light-emitting unit (here, the central light-emitting unit 40 or the outer light-emitting unit 10) when there is no lens above the light-emitting surface of the light-emitting device, and the light distribution angle of light emitted from the light-emitting unit (here, the central light-emitting unit 40 or the outer light-emitting unit 10) and transmitted through the lens when there is a lens above the light-emitting surface of the light-emitting device. Note that the distance here refers to the maximum length between the outer edge of the central light-emitting unit 40 and the central axis c1 of the lens 402 in any direction in a plan view, and the minimum length between the inner edge of the outer light-emitting unit 10 and the central axis c1 of the lens 402. Here, an example will be given to explain the amount of change in the light distribution angle of the light-emitting unit due to the lens. For example, in this embodiment, when the light distribution angle of light emitted from the central light-emitting unit 40 is 118°, the light distribution angle of light emitted from the central light-emitting unit 40 and transmitted through the lens 402 (more specifically, the lens unit 403) is 30°. In this case, the amount of change in the light distribution angle is |118°-30°|=88°. Furthermore, when the light distribution angle of light emitted from the outer light-emitting unit 10 is 118°, the light distribution angle of light emitted from the outer light-emitting unit 10 and transmitted through the lens 402 (more specifically, the lens unit 403) is 140°. In this case, the amount of change in the light distribution angle is |118°-140°|=22°. Therefore, it can be said that in light-emitting module 400, the amount of change in the light distribution angle of central light-emitting unit 40 due to lens 402 (lens unit 403) is greater than the amount of change in the light distribution angle of outer light-emitting units 10 due to lens 402 (lens unit 403). Note that, since the "sizes of central light-emitting unit 40, outer light-emitting units 10, and light-emitting modules 400" are negligibly small compared to the "distances between central light-emitting unit 40, outer light-emitting units 10, and light-emitting module 400, and a light receiver for measuring light distribution angle," when lens 402 is not located above the light-emitting surface of light-emitting module 400, the light distribution angle of light emitted from central light-emitting unit 40 and the light distribution angle of light emitted from outer light-emitting units 10 can be considered to be equivalent values.

[0125] Modified examples of light emitting module 400 are shown in Figures 14A, 14B, and 14C. Figure 14A is a schematic cross-sectional view of a light emitting module 450 according to a first modified example. Figure 14B is a schematic cross-sectional view of a light emitting module 460 according to a second modified example. Figure 14C is a schematic cross-sectional view of a light emitting module 470 according to a third modified example.

[0126] Light emitting module 450, which is a first modified example, differs from light emitting module 400 in that light emitting module 450 includes lens 406 including lens portion 413. Lens 406 has lens portion 413 and lens support portion 404 that supports lens portion 413.

[0127] 14A, in light-emitting module 450, a Fresnel lens having a flat light-emitting surface and multiple convex portions on the light-incident surface is used as lens unit 413. Each of the multiple convex portions is a concentric convex portion centered on central axis c2 of lens unit 413 in plan view. In plan view, central axis c2 of lens unit 413 overlaps with the center of light-emitting device 1. The Fresnel lens enables light-emitting module 450 to be made thinner.

[0128] 14A, similarly to light-emitting module 400, the amount of change in the light distribution angle of central light-emitting unit 40 due to lens 406 is greater than the amount of change in the light distribution angle of outer light-emitting unit 10 due to lens 406.

[0129] Light emitting module 460, which is the second modified example, differs from light emitting module 400 in that light emitting module 460 includes lens 407 including lens portion 423. Lens 407 has lens portion 423 and lens support portion 404 that supports lens portion 423.

[0130] As shown in FIG. 14B , in the light-emitting module 460, the lens unit 423 is a Fresnel lens having a flat light-emitting surface and a central convex portion 415, a first convex portion 416, and a second convex portion 417 on the light-incident surface. The first convex portion 416 and the second convex portion 417 are each convex portions that are concentrically arranged around the central axis c3 of the lens unit 423 in a planar view. That is, the lens unit 423 is a lens that is rotationally symmetrical around the central axis c3. In a planar view, the central axis c3 of the lens unit 423 overlaps with the center of the light-emitting device 1. The light-emitting module 460 controls the light emitted from the light-emitting device 1 using the respective surfaces of the central convex portion 415, the first convex portion 416 outside the central convex portion 415, and the second convex portion 417 outside the first convex portion 416. The light controlled by each surface overlaps in the irradiation area, thereby obtaining the desired irradiation light. For example, when the light emitting module 460 is used as a flash light source when an imaging device takes a photograph, the light emitted from the lens portion 423 can produce an illuminance distribution that is approximately rectangular, similar to the rectangular irradiation area.

[0131] Light emitting module 470, which is the third modified example, differs from light emitting module 400 in that light emitting module 470 includes lens 408 including lens portion 433. Lens 408 has lens portion 433 and lens support portion 404 that supports lens portion 433.

[0132] As shown in FIG. 14C , the lens unit 433 has a flat light-emitting surface and a convex portion 418 including a curved surface on the light-incident surface. In a cross section passing through the central axis c4 of the lens unit 433, the lens unit 433 has a concave center and two convex portions outside the center. In plan view, the convex portion 418 is a single convex portion concentrically arranged about the central axis c4 of the lens unit 433. That is, the lens unit 433 is a lens with rotational symmetry about the central axis c4. In plan view, the central axis c4 of the lens unit 433 overlaps with the central light-emitting unit 40. If the lens unit were plate-shaped, the light emitted from the light-emitting module would have an illuminance distribution in which the illuminance at the center of the light is greater than the illuminance at the periphery of the light. In the light-emitting module 470 of this modification, which includes the lens unit 433, the light emitted from the lens unit 433 would have an illuminance distribution with a reduced illuminance difference from the center to the periphery, compared to a case in which the lens unit were plate-shaped. Therefore, in the light emitting module 470 of this modification, it is possible to reduce unevenness in illuminance within the illuminance distribution.

[0133] A light-emitting module 480 according to a fourth modified example of light-emitting module 400 will be described with reference to FIGS. 14D, 14E, 14F, and 14G. FIG. 14D is a schematic plan view of light-emitting module 480 according to the fourth modified example. FIG. 14E is a schematic cross-sectional view taken along line XIVE-XIVE in FIG. 14D. FIG. 14F is a schematic plan view of the light-emitting module according to the fourth modified example. FIG. 14G is a schematic cross-sectional view taken along line XIVG-XIVG in FIG. 14F. Lens 406 is omitted from FIGS. 14D and 14F.

[0134] The light emitting module 480 of the fourth modified example differs from the light emitting module 450 of the first modified example mainly in that the light emitting module 480 further includes a coating resin part 50.

[0135] As shown in FIG. 14D , the light-emitting module 480 includes a rectangular light-emitting device 1 having two long side surfaces and two short side surfaces. In the light-emitting device 1, a resin member 81 covers a first outer edge 101, a second outer edge 102, a third outer edge 103, and a fourth outer edge 104 of the light-emitting element 100. At least a portion of the resin member 81 forms the outer edge of the rectangular light-emitting device 1 in a planar view. That is, the outer edge of the resin member 81 in a planar view is rectangular, and the resin member 81 has two long side surfaces and two short side surfaces. The four sides of the outer edge of the resin member 81 in a planar view are approximately parallel to the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100, respectively.

[0136] As shown in FIGS. 14D and 14E , in the light-emitting module 480, the coating resin part 50 is disposed in contact with the resin member 81 located on the opposite side in the first direction X of the rectangular light-emitting device 1. In other words, the coating resin part 50 is disposed in contact with two side surfaces of the resin member 81 located on opposite sides. In the example shown in FIG. 14D , the coating resin part 50 is disposed in contact with the two long side surfaces of the light-emitting device 1. The linear expansion coefficient of the coating resin part 50 is smaller than the linear expansion coefficient of the resin member 81. The coating resin part 50 includes a resin base material. The coating resin part 50 may further include at least one of a light-diffusing material, a light-absorbing material, and a pigment. The resin base material of the coating resin part 50 may be, for example, the resin base material exemplified for the phosphor layer 301. The light-diffusing material is, for example, titanium oxide or silicon oxide. The light-absorbing material is, for example, carbon black. Preferably, the resin base material of the resin member 81 contains at least one of a silicone resin or a silicone-modified resin as a main component, and the resin base material of the coating resin portion 50 contains at least one of an epoxy resin or an epoxy-modified resin as a main component. In this embodiment, the resin base material of the resin member 81 is a silicone resin, and the resin base material of the coating resin portion 50 is an epoxy resin. Furthermore, in this embodiment, the coating resin portion 50 contains a light-diffusing material. This allows the exterior color of the coating resin portion 50 to be closer to the exterior color of the resin member 81, thereby reducing the color difference between the coating resin portion 50 and the resin member 81 and providing a light-emitting module 480 with an excellent appearance. Note that the compositions of the resin base material, light-diffusing material, light-absorbing material, and pigment of the coating resin portion 50 are not particularly limited, as long as their linear expansion coefficients are smaller than that of the resin member 81. Thus, by disposing the coating resin portions 50, each having a linear expansion coefficient smaller than that of the resin member 81, in contact with two opposite side surfaces of the rectangular resin member 81, thermal stress on the light-emitting device 1 can be alleviated. This can prevent damage to the light emitting device 1 and to the joining member such as solder that electrically connects the wiring portion of the light emitting device 1 and the circuit portion of the mounting substrate 401.In this embodiment, the two coating resin parts 50 are disposed in contact with the two long side surfaces of the light emitting device 1, respectively. This increases the contact area between the coating resin parts 50 and the resin member 81 compared to when the two coating resin parts 50 are disposed in contact with the two short side surfaces of the light emitting device 1, respectively. In this embodiment, the two coating resin parts 50 are disposed in contact with two side surfaces of the resin member 81 that are located opposite each other, but this is not limiting. For example, the coating resin parts 50 may be disposed in contact with the resin member 81 on at least two of the four side surfaces of the light emitting device 1. Furthermore, the multiple coating resin parts 50 may be spaced apart from each other or may be connected near corners of the light emitting device 1 in a plan view. In this embodiment, the side surfaces of the light emitting device 1 include the side surfaces of the resin member 81 and the side surfaces of the support member 200. However, even if the light emitting device does not include the support member 200, the thermal stress on the light emitting device can be reduced.

[0137] 14F and 14G, recesses 92 may be arranged on the upper surface of the resin member 81. In the example shown in FIG. 14F, the recesses 92 are arranged parallel to each of the four side surfaces of the light emitting device 1, which is rectangular in plan view, and two recesses 92 extending along the first direction X or the second direction Y intersect at four corners of the light emitting device 1. By arranging the recesses 92 on the upper surface of the resin member 81, even if the coating resin part 50 covers the upper surface of the light emitting device 1 during the manufacturing process, the recesses 92 can block the coating resin part 50 and prevent it from spreading to the upper surfaces of the wavelength conversion members 300. The width, shape, arrangement, and number of the recesses 92 in plan view, as well as the length of the recesses 92 in the third direction Z, can be adjusted as appropriate.

[0138] In this embodiment, the coating resin part 50 is in contact with both the side surface of the light emitting device 1 and the upper surface of the mounting substrate 401. This increases the contact area between the coating resin part 50 and the side surface of the light emitting device 1 and the contact area between the coating resin part 50 and the upper surface of the mounting substrate 401, improving the mounting stability of the light emitting device 1. Note that in this embodiment, the side surface of the light emitting device 1 includes the side surface of the resin member 81 and the side surface of the support member 200, but even in the case of a light emitting device that does not include the support member 200, the mounting stability of the light emitting device is improved because the coating resin part 50 is in contact with both the side surface of the light emitting device and the upper surface of the mounting substrate 401.

[0139] As shown in FIG. 14E , in the light-emitting module 480, at least a portion of the coating resin part 50 covers the underside of the light-emitting device 1. "The coating resin part 50 covers the underside of the light-emitting device 1" means that the coating resin part 50 is disposed between the underside of the light-emitting device 1 and the upper surface of the mounting substrate 401, and that the coating resin part 50 is in contact with at least one of the underside of the light-emitting device 1 and the upper surface of the mounting substrate 401. By having at least a portion of the coating resin part 50 cover the underside of the light-emitting device 1, at least one of the contact area between the coating resin part 50 and the underside of the light-emitting device 1 and the contact area between the coating resin part 50 and the upper surface of the mounting substrate 401 is increased, thereby improving the mounting stability of the light-emitting device 1. In this embodiment, the coating resin part 50 is in contact with both the underside of the light-emitting device 1 and the upper surface of the mounting substrate 401. This further improves the mounting stability of the light-emitting device 1. In this embodiment, the lower surface of the light emitting device 1 includes the lower surface of the insulating base material 201 of the support member 200, but even in the case of a light emitting device that does not include the support member 200, at least a portion of the coating resin part 50 covers the lower surface of the light emitting device, thereby improving the mounting stability of the light emitting device.

[0140] As shown in FIGS. 14D and 14E , the light-emitting module 480 may further include at least two electronic components 91 disposed on the upper surface of the mounting substrate 401. The electronic components 91 include at least one of a Zener diode, a thermistor, a capacitor, a light-receiving sensor, and the like. In this embodiment, the light-emitting module 480 includes one electronic component 91 in the first direction X as viewed from the light-emitting device 1, and another electronic component 91 in the opposite direction to the first direction X as viewed from the light-emitting device 1. In this manner, the light-emitting device 1 is disposed between the at least two electronic components 91. In other words, the at least two electronic components 91 are disposed facing the side surfaces of the light-emitting device 1 so as to sandwich the light-emitting device 1 therebetween. Note that the phrase "the light-emitting device 1 is disposed between the at least two electronic components 91" means that the light-emitting device 1 and the at least two electronic components 91 at least partially overlap in the first direction X or the second direction Y. The coating resin portion 50 covers each of the at least two electronic components 91. In this embodiment, one coating resin part 50 covers one electronic component 91, and the other coating resin part 50 covers one electronic component 91. Note that the coating resin part 50 may cover at least one electronic component 91, or may not cover all of the electronic components 91.

[0141] [Method for manufacturing the light emitting device according to the first embodiment] 15A to 15J, a method for manufacturing the light emitting device 1 according to the first embodiment will be described. The method for manufacturing the light emitting device 1 includes the steps of preparing a structure having an element substrate and a rectangular light emitting element, arranging the structure on a support member, and separating the element substrate from the light emitting element.

[0142] 15A, a first structure 601 is prepared. The first structure 601 includes an element substrate 500 and the light-emitting element 100. The light-emitting element 100 has a rectangular shape in plan view, with a first outer edge 101 and a second outer edge 102 extending in a first direction X, and a third outer edge 103 and a fourth outer edge 104 extending in a second direction Y perpendicular to the first direction X.

[0143] The light-emitting element 100 includes an inner light-emitting portion 20 and an outer light-emitting portion 10. The inner light-emitting portion 20 includes an inner semiconductor structure having an inner light-emitting surface and an inner electrode surface located opposite the inner light-emitting surface, and positive and negative inner electrodes (32, 33) arranged on the inner electrode surface. The outer light-emitting portion 10 surrounds the entire periphery of the inner light-emitting portion 20 in a plan view and includes an outer semiconductor structure 11 having an outer light-emitting surface 11A and an outer electrode surface 11B located opposite the outer light-emitting surface 11A, and positive and negative outer electrodes (12, 13) arranged on the outer electrode surface 11B. The outer electrodes (12, 13) include a first outer electrode 12 and a second outer electrode 13. The first outer electrode 12 includes a first extension 12A extending along a first outer edge 101 and a second extension 12B extending along one of a third outer edge 103 and a fourth outer edge 104. The second outer electrode 13 has a third extension portion 13A extending along the second outer edge 102 and a fourth extension portion 13B extending along the other of the third outer edge 103 and the fourth outer edge 104.

[0144] In the method for manufacturing the light emitting device 1 according to the first embodiment, for example, a light emitting device 1 having the electrode patterns shown in FIGS. 3 and 6 can be manufactured.

[0145] The element substrate 500 has a first surface 501 and a second surface 502 located on the opposite side of the first surface 501. The element substrate 500 may be, for example, a sapphire substrate.

[0146] The light emitting element 100 is disposed on the second surface 502 of the element substrate 500. The outer light emitting surface 11A of the outer semiconductor structure 11, the frame-shaped inner light emitting surface 31A of the frame-shaped inner semiconductor structure 31, and the central inner light emitting surface 41A of the central inner semiconductor structure 41 face the second surface 502 of the element substrate 500.

[0147] In the process of preparing the first structure 601, for example, a semiconductor can be grown on the second surface 502 of the element substrate 500 by MOCVD (metal organic chemical vapor deposition), and then the semiconductor can be separated into the outer semiconductor structure 11, the frame-shaped inner semiconductor structure 31, and the central inner semiconductor structure 41 by etching such as RIE (Reactive Ion Etching).

[0148] In the step of preparing the first structure 601, a first outer electrode 12 and a second outer electrode 13 are formed by, for example, sputtering on an outer electrode surface 11B located on the opposite side of the surface of the outer semiconductor structure 11 facing the second surface 502. A first inner electrode 32 and a second inner electrode 33 are formed on a frame-shaped inner electrode surface 31B located on the opposite side of the surface of the frame-shaped inner semiconductor structure 31 facing the second surface 502. A third inner electrode 42 and a fourth inner electrode 43 are formed on a central inner electrode surface 41B located on the opposite side of the surface of the central inner semiconductor structure 41 facing the second surface 502. The order in which the electrodes are formed is not particularly limited, and the electrodes may be formed simultaneously.

[0149] In this embodiment, the first structure 601 is a wafer in which a plurality of light-emitting elements 100 are arranged on an element substrate 500. Alternatively, the first structure 601 may be a structure obtained by dividing the wafer into individual pieces so as to include at least one light-emitting element 100.

[0150] In the step of placing the structure on the support member, as shown in FIG. 15B, the first structure 601 is placed on the support member 200 so that the second surface 502 of the element substrate 500 faces the first wiring surface 201A of the support member 200 described above.

[0151] Each electrode of the light emitting element 100 is bonded to each wiring portion on the first wiring surface 201A via a bonding member 90. When the first structure 601 is placed on the support member 200, the distance between the second surface 502 of the element substrate 500 and the first wiring surface 201A of the support member 200 is, for example, not less than 10 μm and not more than 100 μm.

[0152] In this embodiment, after first structural body 601 is placed on support member 200, a step of placing first resin member 60 between support member 200 and first structural body 601 is provided, as shown in FIG. 15C.

[0153] In the step of placing the first resin member 60, for example, the first structure 601 and the support member 200 are placed in a mold, and a liquid resin material is supplied between the support member 200 and the first structure 601. The supplying method is, for example, compression molding.

[0154] 3, in a plan view of the light-emitting element 100, a first gap g1 is located between an end of the first extending portion 12A and an end of the fourth extending portion 13B, and a second gap g2 is located between an end of the second extending portion 12B and an end of the third extending portion 13A. Therefore, between the support member 200 and the first structure 601, the resin material before hardening can flow between the outer semiconductor structure 11 and the frame-shaped inner semiconductor structure 31 and between the outer electrodes (12, 13) and the inner electrodes (32, 33) through the first gap g1 and the second gap g2 shown in FIG. 3. Furthermore, the resin material can flow between the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41 and between the inner electrodes (32, 33) and the inner electrodes (42, 43) through the fifth gap g5 and the sixth gap g6.

[0155] 6, in a plan view, a third gap g3 is located between the end of the first extending portion 12A and the end of the second extending portion 12B, and a fourth gap g4 is located between the end of the third extending portion 13A and the end of the fourth extending portion 13B. The light-emitting element 100 shown in FIG. 6 also has a seventh gap g7 and an eighth gap g8 compared to the configuration shown in FIG. 3. This allows the resin material to more easily flow between the outer semiconductor structure 11 and the frame-shaped inner semiconductor structure 31, between the outer electrodes (12, 13) and the inner electrodes (32, 33), between the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41, and between the inner electrodes (32, 33) and the inner electrodes (42, 43).

[0156] After supplying a resin material between the support member 200 and the first structure 601, the resin material is cured by, for example, heating, and a first resin member 60 is disposed between the support member 200 and the first structure 601. The first resin member 60 covers the second surface 502 of the element substrate 500, the light emitting element 100, the bonding member 90, and the wiring portion on the first wiring surface 201A. This allows the first resin member 60 to protect each semiconductor structure and each electrode of the light emitting element 100. Note that as long as the first surface 501 of the element substrate 500 is exposed from the first resin member 60, the first resin member 60 may cover the side surface of the element substrate 500.

[0157] In the step of separating the element substrate from the light emitting element, the first structure 601 is disposed on the support member 200, and then the element substrate 500 is separated from the light emitting element 100. In this embodiment, the element substrate 500 is separated from the light emitting element 100 after the step of disposing the first resin member 60 described above. By separating the light emitting element 100 and the element substrate 500, that is, by removing the element substrate 500 from the first structure 601, a light source unit 602 is formed on the support member 200, as shown in FIG. 15D . In the light source unit 602, the outer light emitting surface 11A of the outer semiconductor structure 11, the frame-shaped inner light emitting surface 31A of the frame-shaped inner semiconductor structure 31, and the central inner light emitting surface 41A of the central inner semiconductor structure 41 are exposed from the first resin member 60.

[0158] For example, the device substrate 500 is a sapphire substrate, and the semiconductor structures (the outer semiconductor structure 11, the frame-shaped inner semiconductor structure 31, and the central inner semiconductor structure 41) contain gallium nitride (GaN). In this case, the semiconductor structures and the device substrate 500 can be separated by a laser lift-off method.

[0159] In the laser lift-off method, laser light is irradiated from the first surface 501 side of the element substrate 500 toward the outer light-emitting surface 11A of the outer semiconductor structure 11, the frame-shaped inner light-emitting surface 31A of the frame-shaped inner semiconductor structure 31, and the central inner light-emitting surface 41A of the central inner semiconductor structure 41. The laser light is transmitted through the element substrate 500 and has a wavelength that is in the absorption region of each semiconductor structure. The laser light has, for example, an emission peak wavelength of 190 nm or more and 380 nm or less. Gallium nitride absorbs the energy of the laser light and thermally decomposes. The laser light irradiation decomposes gallium nitride into nitrogen and gallium on the light-emitting surface of each semiconductor structure, and the element substrate 500 is peeled off from each semiconductor structure. The first resin member 60 also absorbs the energy of the laser light.

[0160] In the process of separating the element substrate 500 from the light emitting element 100 by the laser lift-off method, each semiconductor structure is supported on the support member 200 with all surfaces except the light emitting surface covered with the first resin member 60. The first resin member 60 can absorb the impact of nitrogen gas generated during the thermal decomposition of gallium nitride. This reduces the stress applied to the semiconductor structure compared to when the first resin member 60 is not present, and can reduce unintended cracking of the semiconductor structure.

[0161] Due to the impact during the laser lift-off, portions of the semiconductor structure that are relatively weak are likely to be damaged, such as being partially dented or cracked, etc. For example, portions of the semiconductor structure where no electrodes are disposed are likely to be weak.

[0162] 3 or 6, in this embodiment, the outer electrodes (12, 13) extend along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100, thereby increasing the area of ​​the outer electrodes (12, 13), thereby reducing partial damage to the outer semiconductor structure 11 due to impact during laser lift-off. This improves the light-emitting characteristics of the outer light-emitting portion 10.

[0163] Similarly, by extending the inner electrodes (32, 33) along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 and increasing the area of ​​the inner electrodes (32, 33), it is possible to reduce partial damage to the frame-shaped inner semiconductor structure 31 due to impact during laser lift-off, thereby improving the light-emitting characteristics of the frame-shaped inner light-emitting portion 30.

[0164] 3 and 6, in this embodiment, the positive and negative inner electrodes (32, 33, 42, 43) are located on an imaginary line L connecting the first gap g1 and the second gap g2 in a plan view. That is, the outer electrodes and the inner electrodes are arranged to overlap in the direction of the imaginary line L. This makes it possible to reinforce the outer semiconductor structure 11, the frame-shaped inner semiconductor structure 31, and the central inner semiconductor structure 41, and to reduce damage to each of them due to impact during laser lift-off.

[0165] When the outer semiconductor structure 11 has a frame shape in a plan view, stress is likely to concentrate at its corners when it is subjected to an impact during laser lift-off. In the configuration shown in Fig. 3, the first extension 12A and the second extension 12B of the first outer electrode 12 are continuous with each other at the corner where the first outer edge 101 and the third outer edge 103 intersect. Furthermore, the third extension 13A and the fourth extension 13B of the second outer electrode 13 are continuous with each other at the corner where the second outer edge 102 and the fourth outer edge 104 intersect. This reduces damage to the corners of the outer semiconductor structure 11 during laser lift-off.

[0166] 3, the fifth extension 32A and the sixth extension 32B of the first inner electrode 32 are continuous with a corner, and the seventh extension 33A and the eighth extension 33B of the second inner electrode 33 are continuous with a corner, which reduces damage to the corners of the frame-shaped inner semiconductor structure 31 during laser lift-off.

[0167] It should be noted that the number and positions of the gaps in the outer electrode and the inner electrode are not limited to the examples shown in Figures 3 and 6. Furthermore, when there are two or more gaps, the distance between the gaps is also not limited to the examples shown in Figures 3 and 6. The number, positions, and distance between the gaps may be adjusted as appropriate, taking into consideration areas of the frame-shaped inner semiconductor structure 31 that need to be reinforced during laser lift-off, etc.

[0168] 15I, the method for manufacturing the light emitting device 1 includes a step of arranging the wavelength converting member 300 on the light source unit 602. The step of arranging the wavelength converting member 300 on the light source unit 602 can include, for example, a step of preparing a wavelength converting structure 800 in which the above-mentioned wavelength converting members (300A, 300B, 300C) are integrally held by the second resin member 70, and a step of arranging the wavelength converting structure 800 on the light source unit 602.

[0169] Next, the steps of preparing the wavelength converting member 300 wavelength converting structure will be described with reference to FIGS. 15E to 15H.

[0170] First, each wavelength conversion member (300A, 300B, 300C) is prepared. The outer wavelength conversion member 300A can be formed into a frame-like shape in plan view, for example, by punching out the center of a wavelength conversion member that is rectangular in plan view. Similarly, the inner wavelength conversion member 300B can be formed into a frame-like shape in plan view, for example, by punching out the center of a rectangular wavelength conversion member. The central wavelength conversion member 300C that is rectangular in plan view can be formed by dicing a sheet-like wavelength conversion member, for example, by blade processing or laser processing.

[0171] As shown in FIG. 15E, a plurality of outer wavelength conversion members 300A each having a frame shape in a plan view are arranged in a matrix on a sheet 701.

[0172] After arranging a plurality of outer wavelength conversion members 300A on the sheet 701, as shown in Fig. 15F, a plurality of inner wavelength conversion members 300B each having a frame shape in a plan view are arranged on the sheet 701. One inner wavelength conversion member 300B is arranged inside one outer wavelength conversion member 300A. At this time, the outer wavelength conversion member 300A and the inner wavelength conversion member 300B are arranged so as to be spaced apart from each other.

[0173] After arranging the multiple inner wavelength conversion members 300B on the sheet 701, multiple central wavelength conversion members 300C, each having a rectangular shape in plan view, are arranged on the sheet 701, as shown in Fig. 15G. One central wavelength conversion member 300C is arranged inside one inner wavelength conversion member 300B. At this time, the inner wavelength conversion member 300B and the central wavelength conversion member 300C are arranged so as to be spaced apart from each other.

[0174] After the wavelength conversion members (300A, 300B, 300C) are placed on the sheet 701, a second resin member 70, which is a liquid resin material, is applied by printing onto the sheet 701 so as to cover the top and side surfaces of the wavelength conversion members (300A, 300B, 300C), as shown in Fig. 15H. Thereafter, the second resin member 70 is hardened by heating.

[0175] After the second resin member 70 is cured, the second resin member 70 and the sheet 701 located in the region between the adjacent outer wavelength converting members 300A are cut as shown by the two-dot chain lines in Fig. 15H, thereby dividing the sheet 701 into a plurality of wavelength converting structures 800, each of which includes a wavelength converting member 300.

[0176] 15I, the wavelength converting structure 800 is placed on the light source unit 602. At this time, the outer wavelength converting member 300A is placed on the outer light-emitting surface 11A, the inner wavelength converting member 300B is placed on the frame-shaped inner light-emitting surface 31A, and the central wavelength converting member 300C is placed on the central inner light-emitting surface 41A. By placing the wavelength converting structure 800 on the light source unit 602 in this manner, the second resin member 70 is placed on the first resin member 60.

[0177] The wavelength converting structure 800 is bonded to the light source unit 602 via an adhesive layer. Alternatively, the wavelength converting structure 800 may be directly bonded to the light source unit 602.

[0178] After arranging the wavelength converting structure 800 on the light source section 602, the manufacturing method for the light emitting device 1 includes a step of arranging a third resin member 80 on the support member 200. In the step of arranging the third resin member 80 on the support member 200, as shown in Fig. 15J, the top surface and side surfaces of the wavelength converting structure 800 and the top surface of the light source section 602 (in Fig. 15J, part of the top surface of the first resin member 60, part of the inclined side surfaces, and part of the first wiring surface 201A) are covered with the third resin member 80.

[0179] After the third resin member 80 is placed on the support member 200, the manufacturing method for the light emitting device 1 includes a step of removing a part of the upper surface of the third resin member 80 and a part of the upper surface of the second resin member 70. As a result, as shown in Fig. 2, the upper surfaces of the outer wavelength conversion member 300A, the inner wavelength conversion member 300B, and the central wavelength conversion member 300C are exposed from the third resin member 80 and the second resin member 70. For example, the part of the upper surface of the third resin member 80 and the part of the upper surface of the second resin member 70 can be removed by grinding.

[0180] Through the above steps, the light emitting device 1 shown in FIG. 2 can be obtained.

[0181] [Method for manufacturing a light emitting device according to the second embodiment] 16A to 16E, a method for manufacturing the light emitting device 2 according to the second embodiment will be described. The method for manufacturing the light emitting device 2 according to the second embodiment differs from the method for manufacturing the light emitting device 1 according to the first embodiment mainly in the order of the step of arranging the structure on the support member and the step of separating the element substrate from the light emitting element.

[0182] In the method for manufacturing the light emitting device 2 according to the second embodiment, for example, a light emitting device 2 having any one of the electrode patterns shown in FIGS. 3, 6 and 10 can be manufactured.

[0183] The manufacturing method of the light emitting device 2 includes a step of preparing a second structure 603 shown in Fig. 16A. The second structure 603 has an element substrate 500 and a light emitting element 100 arranged on a second surface 502 of the element substrate 500. The light emitting element 100 is a light emitting element in the second embodiment, and has a first outer electrode 14, a second outer electrode 15, a first inner electrode 34, a second inner electrode 35, a third inner electrode 42, and a fourth inner electrode 43 shown in Fig. 10. The second structure 603 is a wafer in which a plurality of light emitting elements 100 are arranged on the element substrate 500.

[0184] The second structure 603 is disposed on the second surface 502 of the element substrate 500 and further includes a first resin member 60 that covers the light emitting element 100. The first outer electrode 14, the second outer electrode 15, the first inner electrode 34, the second inner electrode 35, the third inner electrode 42, and the fourth inner electrode 43 have surfaces that are opposite to the semiconductor structure and are exposed from the first resin member 60.

[0185] In the step of preparing the second structure 603, the first resin member 60 is formed by supplying a liquid first resin member 60 onto the second surface 502 of the element substrate 500 so as to cover the light emitting element 100, and then curing the first resin member 60 by heating. The cured first resin member 60 is then ground to expose, from the first resin member 60, the surfaces of each electrode of the light emitting element 100 that are located opposite the semiconductor structure. Next, the element substrate 500 and the first resin member 60 are cut so that each light emitting element 100 includes one outer semiconductor structure 11, one frame-shaped inner semiconductor structure 31, and one central inner semiconductor structure 41. This allows the first resin member 60 to be formed between the outer semiconductor structure 11 and the frame-shaped inner semiconductor structure 31, between the frame-shaped inner semiconductor structure 31 and the central inner semiconductor structure 41, and between each electrode.

[0186] 16B, the manufacturing method of the light emitting device 2 includes a step of arranging the second structure 603 on a support member 702. The support member 702 in this embodiment is a holding member for temporarily holding the light emitting element 100 during the manufacturing process. The support member 702 (hereinafter also referred to as the holding member 702) is, for example, a sheet. The second structure 603 is arranged on the support member 702 (holding member 702) so that the second surface 502 of the element substrate 500 faces the support member 702 (holding member 702).

[0187] The manufacturing method of the light emitting device 2 includes a step of disposing the second structure 603 on a support member 702 (holding member 702) and then separating the element substrate 500 from the light emitting element 100. By separating the light emitting element 100 from the element substrate 500, a light source section 604 including the second structure 603 is formed on the holding member 702, as shown in FIG. 16C . In this embodiment, the holding member 702 is in the form of a wafer including a plurality of light source sections 604 on its upper surface. In the light source section 604, the outer light emitting surface 11A of the outer semiconductor structure 11, the frame-shaped inner light emitting surface 31A of the frame-shaped inner semiconductor structure 31, and the central inner light emitting surface 41A of the central inner semiconductor structure 41 are exposed from the first resin member 60. As in the first embodiment, the element substrate 500 can be separated from the light emitting element 100 by laser lift-off.

[0188] 3, 6, and 10, the outer electrodes (12, 13) and inner electrodes (32, 33) are extended along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104 of the light-emitting element 100, thereby increasing the areas of the outer electrodes (12, 13) and the inner electrodes (32, 33), thereby reducing partial damage to the outer semiconductor structure 11 and the frame-shaped inner semiconductor structure 31 due to impact during laser lift-off. This improves the light-emitting characteristics of the outer light-emitting section 10 and the inner light-emitting section 20.

[0189] 10, the outer electrodes (14, 15) and the inner electrodes (34, 35) each have a rectangular frame shape that is continuous along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104. This increases the strength of the outer semiconductor structure 11 and the frame-shaped inner semiconductor structure 31 in the entire circumferential direction (including corners) along the first outer edge 101, the second outer edge 102, the third outer edge 103, and the fourth outer edge 104, and reduces partial damage to the semiconductor structures due to impact during laser lift-off. This improves the light-emitting characteristics of the outer light-emitting section 10 and the inner light-emitting section 20.

[0190] In the manufacturing method of the light emitting device 2, after separating the light emitting element 100 and the element substrate 500, one wavelength converting structure 800 is disposed on each light source unit 604 having one second structure 603. The wavelength converting structure 800 is prepared separately in the step of preparing a wavelength converting structure (see FIGS. 15E to 15H ). In this embodiment, when the wavelength converting structure 800 is transferred onto the light source unit 604 using a jig, a protective member 9 is provided on the upper surface of the wavelength converting structure 800 as shown in FIG. 16D to facilitate the jig's transfer of the wavelength converting structure 800 or to reduce damage to the wavelength converting structure 800. The protective member 9 includes, for example, glass or resin, and is disposed on the upper surface of the wavelength converting structure 800 via an adhesive member. Note that, as long as the jig can transfer the wavelength converting structure 800, the protective member 9 need not be provided on the upper surface of the wavelength converting structure 800.

[0191] The manufacturing method of the light emitting device 2 includes a step of arranging one wavelength converting structure 800 for each light source unit 604 having one second structure 603, and then arranging each light source unit 604 having one second structure 603 on a support member 200. In this step, a bonding member 90 is arranged on the support member 200, and each electrode of the light emitting element 100 is bonded to each wiring unit on the first wiring surface 201A via the bonding member 90. In this embodiment, multiple pairs of one light source unit 604 and one wavelength converting structure 800 are arranged on a single shared support member 200. Note that multiple support members 200 may be prepared, and one pair of a light source unit 604 and a wavelength converting structure 800 may be arranged on each support member 200.

[0192] After bonding each electrode of the light emitting element 100 to each wiring portion on the first wiring surface 201A, the manufacturing method for the light emitting device 2 includes a step of arranging a third resin member 80 on the support member 200. In the step of arranging the third resin member 80 on the support member 200, as shown in FIG. 16E, the top surface and side surfaces of the protection member 9, the side surfaces of the wavelength converting structure 800, and the top surface of the light source unit 604 (in FIG. 16E, part of the top surface, part of the side surfaces, and part of the first wiring surface 201A of the first resin member 60) are covered with the third resin member 80. Note that the side surfaces of the first resin member 60 may be exposed from the side surfaces of the third resin member 80. In this case, because the first resin member 60 covers the first wiring surface 201A, the third resin member 80 does not need to be in contact with the first wiring surface 201A.

[0193] After disposing the third resin member 80 on the support member 200, the manufacturing method for the light emitting device 2 includes a step of removing a portion of the upper surface of the third resin member 80 and a portion of the upper surface of the second resin member 70. In this embodiment, the protective member 9 is also removed in this step. As a result, as shown in FIG. 2 or FIG. 11, the upper surfaces of the outer wavelength conversion member 300A, the inner wavelength conversion member 300B, and the central wavelength conversion member 300C are exposed from the third resin member 80 and the second resin member 70. For example, grinding can be used to remove a portion of the upper surface of the third resin member 80, the protective member 9, and a portion of the upper surface of the second resin member 70. Note that if at least one of the support member 200 and the third resin member 80 is continuous between adjacent second structures 603 (in other words, light source units 604), it is cut between the adjacent second structures 603 by dicing or the like. This results in a plurality of individual light emitting devices 2.

[0194] Through the above steps, the light emitting device 2 shown in FIG. 2 or FIG. 11 can be obtained.

[0195] According to the light emitting device, light emitting module, and method for manufacturing a light emitting device of the present disclosure, the area of ​​the semiconductor structure and the area of ​​the electrode can be increased, and the light emitting device can be suitably used as a flash light source for an imaging device such as a camera, lighting, an in-vehicle headlight, etc. However, the light emitting device, light emitting module, and method for manufacturing a light emitting device of the present disclosure are not limited to these applications.

[0196] Embodiments of the present invention may include the following light emitting device, light emitting module, and method for manufacturing the light emitting device.

[0197] [Section 1] A support member; a light-emitting element that is disposed on the support member and has a rectangular shape in a plan view, the light-emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and the inner semiconductor structure and the outer semiconductor structure are outermost surfaces of the light emitting surface, The positive and negative outer electrodes are a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge; a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge; and A light emitting device, wherein, in a planar view, a first gap is located between an end of the first extension portion and an end of the fourth extension portion, and a second gap is located between an end of the second extension portion and an end of the third extension portion. [Section 2] Item 2. The light emitting device according to item 1, wherein the first extending portion and the second extending portion are continuous, and the third extending portion and the fourth extending portion are continuous. [Section 3] Item 1. The light-emitting device according to item 1, wherein, in a planar view, a third gap is located between an end of the first extension portion and an end of the second extension portion, and a fourth gap is located between an end of the third extension portion and an end of the fourth extension portion. [Section 4] 4. The light emitting device according to any one of items 1 to 3, wherein the positive and negative inner electrodes are located on an imaginary line connecting the first gap and the second gap in a plan view. [Section 5] the inner light-emitting portion has a frame-shaped light-emitting portion that is frame-shaped along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge in a plan view, the inner electrode includes a first inner electrode and a second inner electrode disposed on an inner electrode surface of the frame-shaped light-emitting portion, the first inner electrode has a fifth extension portion extending along the first extension portion and a sixth extension portion extending along the second extension portion, the second inner electrode has a seventh extension portion extending along the third extension portion and an eighth extension portion extending along the fourth extension portion, the first inner electrode and the first outer electrode are adjacent to each other and have the same polarity; 5. The light emitting device according to any one of items 1 to 4, wherein the support member has one common wiring portion commonly joined to the first inner electrode and the first outer electrode of one of the light emitting elements. [Section 6] 6. The light emitting device according to any one of items 1 to 5, wherein a ratio of a length of the outer electrode in a direction along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge to a length of the outer electrode surface in a direction along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge is 0.8 or more. [Section 7] A support member; a light-emitting element that is disposed on the support member and has a rectangular shape in a plan view, the light-emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and the inner semiconductor structure and the outer semiconductor structure are outermost surfaces of the light emitting surface, The outer electrode is a first outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; a second outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; and The inner electrode is a first inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; a second inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; and In a plan view, the first outer electrode and the first inner electrode are disposed between the second outer electrode and the second inner electrode, The light emitting device, wherein the support member has one common wiring portion commonly joined to the first outer electrode and the first inner electrode. [Section 8] 8. The light emitting device according to any one of items 1 to 7, further comprising a wavelength conversion member disposed on the inner light emitting surface and the outer light emitting surface. [Section 9] The light emitting device according to any one of items 1 to 7, wherein the inner light emitting portion includes a rectangular central light emitting portion that is located at the center of the inner light emitting portion and irradiates light onto a central region in an illumination region; lenses disposed on the inner light-emitting surface and the outer light-emitting surface of the light-emitting device; Equipped with a change in the light distribution angle of the central light-emitting portion due to the lens being greater than a change in the light distribution angle of the outer light-emitting portions due to the lens; [Section 10] an element substrate having a first surface and a second surface located opposite to the first surface; a light emitting element that is disposed on the second surface of the element substrate and has a rectangular shape in a plan view, the light emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; providing a structure having: placing the structure on a support member such that the second surface faces the support member; a step of separating the element substrate from the light-emitting element after disposing the structure on the support member; Equipped with In the step of preparing the structure, The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and The outer electrode is a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge; a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge; A method for manufacturing a light emitting device comprising the steps of: [Section 11] a step of disposing a resin member between the support member and the structure after disposing the structure on the support member, Item 11. A method for manufacturing a light-emitting device according to item 10, wherein, in a planar view, a first gap is located between an end of the first extension portion and an end of the fourth extension portion, and a second gap is located between an end of the second extension portion and an end of the third extension portion. [Section 12] Item 12. A method for manufacturing a light-emitting device according to item 11, wherein, in a planar view, a third gap is located between an end of the first extension portion and an end of the second extension portion, and a fourth gap is located between an end of the third extension portion and an end of the fourth extension portion. [Section 13] further comprising a resin member covering a first outer edge, a second outer edge, a third outer edge, and a fourth outer edge of the light emitting element; Item 9. The light emitting device according to any one of items 1 to 8, wherein at least a part of the resin member constitutes an outer edge of the rectangular light emitting device in plan view. [Section 14] Item 14. The light-emitting device according to Item 13, a mounting substrate having an upper surface on which the light emitting device is disposed; a resin coating portion disposed in contact with two side surfaces of the resin member that are opposite to each other; A light-emitting module, wherein the coating resin portion has a linear expansion coefficient smaller than that of the resin member. [Section 15] Further comprising at least two electronic components disposed on the upper surface of the mounting substrate; the light emitting device is disposed between the at least two electronic components; Item 15. The light emitting module according to item 14, wherein the covering resin portion covers each of the at least two electronic components. [Section 16] Item 16. The light-emitting module according to item 14 or 15, wherein at least a part of the covering resin portion covers a lower surface of the light-emitting device. [Section 17] The resin member has two long sides and two short sides, 17. The light-emitting module according to any one of items 14 to 16, wherein the covering resin portion is disposed in contact with at least the two long side surfaces.

[0198] The above describes embodiments of the present invention with reference to specific examples. However, the present invention is not limited to these specific examples. All forms that can be implemented by a person skilled in the art through appropriate design modifications based on the above-described embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention. In addition, a person skilled in the art may conceive of various modifications and alterations within the scope of the concept of the present invention, and these modifications and alterations also fall within the scope of the present invention. [Explanation of symbols]

[0199] 1... Light emitting device, 2... Light emitting device, 10... Outer light emitting part, 11... Outer semiconductor structure, 11A... Outer light emitting surface, 11B... Outer electrode surface, 12... First outer electrode, 12A... First extension part, 12B... Second extension part, 13... Second outer electrode, 13A... Third extension part, 13B... Fourth extension part, 14... 1 outer electrode, 15...second outer electrode, 20...inner light emitting part, 30...frame-shaped inner light emitting part, 31...frame-shaped inner semiconductor structure, 31A...frame-shaped inner light emitting surface, 31B...frame-shaped inner electrode surface, 32...first inner electrode, 32A...fifth extension part, 32B...sixth extension part, 33...second inner electrode, 33A...seventh Extension portion, 33B...eighth extension portion, 34...first inner electrode, 35...second inner electrode, 40...central light emitting portion, 41...central inner semiconductor structure, 41A...central inner light emitting surface, 41B...central inner electrode surface, 42...third inner electrode, 43...fourth inner electrode, 50...coating resin portion, 60...first resin member, 70...second resin member, 80...third resin member, 81...resin member, 90...bonding member, 100...light emitting element, 101...first outer edge, 102...second outer edge, 103...third outer edge, 104...fourth outer edge, 200...support member, 201...insulating base material, 212...first outer wiring portion, 213...second outer wiring Line portion, 214...third outer wiring portion, 215...fourth outer wiring portion, 232...first inner wiring portion, 233...second inner wiring portion, 234...fifth inner wiring portion, 235...sixth inner wiring portion, 242...third inner wiring portion, 243...fourth inner wiring portion, 244...seventh inner wiring portion, 245...eighth inner wiring portion, 252...common wiring portion, 260...common wiring portion, 261...outer wiring portion, 262...inner wiring portion, 300...wavelength conversion member, 300A...outer wavelength conversion member, 300B...inner wavelength conversion member, 300C...central wavelength conversion member, 300D...frame-shaped wavelength conversion member, 301...phosphor layer, 302...light diffusion layer, 303...light-transmitting layer, 400, 450, 460, 470, 480...light-emitting module, 401...mounting substrate, 402, 406, 407, 408...lens, 404...lens support portion, 403, 413, 423, 433...lens portion, 415...central convex portion, 416, 417, 418...convex portion, 500...element substrate, 501...first surface, 502...second surface, 601...first structure, 602...light source portion, 603...second structure, 604...light source portion, 701...sheet, 702...supporting member, 800...wavelength converting structure, 9...protective member, 91...electronic component, 92...recess

Claims

1. A support member; a light-emitting element that is disposed on the support member and has a rectangular shape in a plan view, the light-emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and the inner semiconductor structure and the outer semiconductor structure are outermost surfaces of the light emitting surface, The positive and negative outer electrodes are a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge; a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge; and A light-emitting device, wherein, in a planar view, a first gap is located between an end of the first extension portion and an end of the fourth extension portion, and a second gap is located between an end of the second extension portion and an end of the third extension portion.

2. The light emitting device according to claim 1 , wherein the first extending portion and the second extending portion are continuous, and the third extending portion and the fourth extending portion are continuous.

3. 2. The light-emitting device according to claim 1, wherein, in a planar view, a third gap is located between an end of the first extension portion and an end of the second extension portion, and a fourth gap is located between an end of the third extension portion and an end of the fourth extension portion.

4. 4. The light emitting device according to claim 1, wherein the positive and negative inner electrodes are located on an imaginary line connecting the first gap and the second gap in a plan view.

5. the inner light-emitting portion has a frame-shaped light-emitting portion that is frame-shaped along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge in a plan view, the inner electrode includes a first inner electrode and a second inner electrode disposed on an inner electrode surface of the frame-shaped light-emitting portion, the first inner electrode has a fifth extension portion extending along the first extension portion and a sixth extension portion extending along the second extension portion, the second inner electrode has a seventh extension portion extending along the third extension portion and an eighth extension portion extending along the fourth extension portion, the first inner electrode and the first outer electrode are adjacent to each other and have the same polarity; 4. The light emitting device according to claim 1, wherein the support member has one common wiring portion commonly joined to the first inner electrode and the first outer electrode of one of the light emitting elements.

6. A light-emitting device described in any one of claims 1 to 3, wherein the ratio of the length of the outer electrode surface in the direction along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge to the length of the outer electrode in the direction along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge is 0.8 or more.

7. A support member; a light-emitting element that is disposed on the support member and has a rectangular shape in a plan view, the light-emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and the inner semiconductor structure and the outer semiconductor structure are outermost surfaces of the light emitting surface, The outer electrode is a first outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; a second outer electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; and The inner electrode is a first inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; a second inner electrode continuous along the first outer edge, the second outer edge, the third outer edge, and the fourth outer edge; and the first outer electrode and the first inner electrode are disposed between the second outer electrode and the second inner electrode in a plan view, The light emitting device, wherein the support member has one common wiring portion commonly joined to the first outer electrode and the first inner electrode.

8. The light emitting device according to claim 1 , further comprising a wavelength converting member disposed on the inner light emitting surface and the outer light emitting surface.

9. the inner light-emitting portion includes a rectangular central light-emitting portion that is located at the center of the inner light-emitting portion and that irradiates a central region of an illumination region with light; and lenses disposed on the inner light-emitting surface and the outer light-emitting surface of the light-emitting device; Equipped with a change in the light distribution angle of the central light-emitting portion due to the lens being greater than a change in the light distribution angle of the outer light-emitting portions due to the lens;

10. an element substrate having a first surface and a second surface located opposite the first surface; a light emitting element that is disposed on the second surface of the element substrate and has a rectangular shape in a plan view, the light emitting element having first and second outer edges extending in a first direction and third and fourth outer edges extending in a second direction perpendicular to the first direction; providing a structure having: placing the structure on a support member such that the second surface faces the support member; a step of separating the element substrate from the light-emitting element after disposing the structure on the support member; Equipped with In the step of preparing the structure, The light-emitting element is an inner light emitting portion including an inner semiconductor structure having an inner light emitting surface and an inner electrode surface located opposite the inner light emitting surface, and positive and negative inner electrodes disposed on the inner electrode surface; an outer light emitting portion including an outer semiconductor structure that surrounds the entire periphery of the inner light emitting portion in a plan view and has an outer light emitting surface and an outer electrode surface located on the opposite side of the outer light emitting surface, and positive and negative outer electrodes that are arranged on the outer electrode surface; and The outer electrode is a first outer electrode having a first extension portion extending along the first outer edge and a second extension portion extending along one of the third outer edge and the fourth outer edge; a second outer electrode having a third extension portion extending along the second outer edge and a fourth extension portion extending along the other of the third outer edge and the fourth outer edge; A method for manufacturing a light emitting device comprising the steps of:

11. a step of disposing a resin member between the support member and the structure after disposing the structure on the support member, 11. The method for manufacturing a light-emitting device according to claim 10, wherein, in a planar view, a first gap is located between an end of the first extension portion and an end of the fourth extension portion, and a second gap is located between an end of the second extension portion and an end of the third extension portion.

12. 12. The method for manufacturing a light-emitting device according to claim 11, wherein, in a planar view, a third gap is located between an end of the first extension portion and an end of the second extension portion, and a fourth gap is located between an end of the third extension portion and an end of the fourth extension portion.

13. a resin member that covers a first outer edge, a second outer edge, a third outer edge, and a fourth outer edge of the light emitting element; The light emitting device according to claim 1 , wherein at least a part of the resin member forms an outer edge of the light emitting device having a rectangular shape in a plan view.

14. A light emitting device according to claim 13; a mounting substrate having an upper surface on which the light emitting device is disposed; a resin coating portion disposed in contact with two side surfaces of the resin member that are located opposite to each other, A light-emitting module, wherein the coating resin portion has a linear expansion coefficient smaller than that of the resin member.

15. Further, at least two electronic components are disposed on the upper surface of the mounting substrate; the light emitting device is disposed between the at least two electronic components; The light-emitting module according to claim 14 , wherein the coating resin portion coats each of the at least two electronic components.

16. The light-emitting module according to claim 14 , wherein at least a portion of the covering resin portion covers a lower surface of the light-emitting device.

17. The resin member has two long sides and two short sides, The light-emitting module according to claim 14 , wherein the covering resin portion is disposed in contact with at least the two long side surfaces.

Images