Semiconductor element

Abstract

To provide a semiconductor element with stable electric characteristics, whose reliability can be improved.SOLUTION: A semiconductor element according to the present invention includes a main transistor, a sub-transistor connected to one end of the main transistor, a resistor element connected between the other end of the main transistor and the sub-transistor, and a main channel layer formed of a first part of a channel layer. The main transistor includes a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer. The sub-transistor includes a sub-channel layer formed of a second part of the channel layer and including a first sub-drift region including a first two-dimensional electron gas (2DEG) region. The resistor element is formed of a third part of the channel layer, is electrically connected between a sensing electrode and a main source electrode, and includes a second sub-drift region including a second 2DEG region.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device having stable electrical characteristics and improved reliability. [Background technology]

[0002] In modern society, semiconductor devices are closely related to everyday life. In particular, the importance of power semiconductor devices is gradually increasing in a variety of fields, including transportation such as electric vehicles, railways, and electric trams, renewable energy systems such as solar power generation and wind power generation, and mobile devices. 2. Description of the Related Art Power semiconductor devices are semiconductor devices used to handle high voltages and high currents, and perform functions such as power conversion and control in large power systems and high-power electronic devices. Power semiconductor devices have the capability and durability to handle high power, so they can handle large amounts of current and withstand high voltages. For example, power semiconductor devices handle voltages from hundreds to thousands of volts and currents from tens to thousands of amperes. Power semiconductor devices can minimize power loss and improve the efficiency of electrical energy. Furthermore, the power semiconductor device can be operated stably even in a high-temperature environment.

[0003] Such power semiconductor devices can be classified according to the material, for example, SiC power semiconductor devices and GaN power semiconductor devices. By manufacturing power semiconductor devices using SiC or GaN instead of existing silicon wafers, it is possible to compensate for the disadvantage of silicon, which has unstable properties at high temperatures. SiC power semiconductor elements are resistant to high temperatures and have low power loss, making them suitable for electric vehicles, renewable energy systems, and other applications. GaN power semiconductor devices are expensive but efficient in terms of speed, making them suitable for applications such as fast charging of mobile devices. Stable electrical characteristics and improved reliability of such power semiconductor devices are always a challenge. Summary of the Invention [Problem to be solved by the invention]

[0004] The present invention has been made in view of the above-mentioned problems associated with conventional semiconductor elements, and an object of the present invention is to provide a semiconductor element that has stable electrical characteristics and can improve reliability. [Means for solving the problem]

[0005] In order to achieve the above object, a semiconductor device according to the present invention includes a main transistor, a sub-transistor connected to one end of the main transistor, and a resistor connected between the other end of the main transistor and the sub-transistor, the semiconductor device including a channel layer, the main transistor including: a main channel layer formed of a first portion of the channel layer; a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer; and the sub-transistor including a sub-channel layer formed of a second portion of the channel layer and including a first sub-drift region having a first two-dimensional electron gas (2DEG) region; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; a sub-gate electrode disposed on the sub-channel layer; and a sensing electrode disposed on the sub-channel layer and located on one side of the sub-gate electrode, wherein a width of the sub-channel layer is different from a width of the main channel layer; and the resistance element includes a channel pattern including a second sub-drift region formed of a third portion of the channel layer, electrically connected between the sensing electrode and the main source electrode, and having a second two-dimensional electron gas (2DEG) region.

[0006] In order to achieve the above object, a semiconductor device according to the present invention includes a main transistor, a sub-transistor connected to one end of the main transistor, and a resistor connected between the other end of the main transistor and the sub-transistor, the semiconductor device including a channel layer, the main transistor including: a main channel layer formed of a first portion of the channel layer; a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer; and the sub-transistor including: a sub-channel layer formed of a second portion of the channel layer and including a first sub-drift region having a first two-dimensional electron gas (2DEG) region; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; and a sub-gate electrode disposed on the sub-channel layer. a sensing electrode disposed on the sub-channel layer and located on one side of the sub-gate electrode, wherein the resistance element includes a channel pattern formed from a third portion of the channel layer and located between the sensing electrode and the main source electrode, the channel pattern including a second sub-drift region having a second two-dimensional electron gas (2DEG) region, and a length of the channel pattern between the sensing electrode and the main source electrode is 1 μm to 10 μm.

[0007] In order to achieve the above object, a semiconductor device according to the present invention includes a main transistor, a sub-transistor connected to one end of the main transistor, and a resistor connected between the other end of the main transistor and the sub-transistor, the semiconductor device including a channel layer, the main transistor including a main channel layer made of a first portion of the channel layer and including GaN, a barrier layer disposed on the main channel layer and including AlGaN, a main gate electrode disposed on the barrier layer, a gate semiconductor layer disposed between the barrier layer and the main gate electrode and including GaN doped with p-type impurities, and a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer, the sub-transistor including a sub-channel made of a second portion of the channel layer and including the same material as the main channel layer, and including a first sub-drift region having a first two-dimensional electron gas (2DEG) region. a channel pattern including a second sub-drift region having a second two-dimensional electron gas (2DEG) region, the second sub-drift region being formed of a third portion of the channel layer and including the same material as the main channel layer, the second sub-drift region being located between the sensing electrode and the main source electrode, the second sub-drift region having a second two-dimensional electron gas (2DEG) region, the resistance of the second sub-drift region having a positive temperature coefficient of resistance, the resistance of a first contact between the sensing electrode and the channel pattern and the resistance of a second contact between the main source electrode and the channel pattern having a negative temperature coefficient of resistance, and the sum of the resistance of the second sub-drift region, the resistance of the first contact, and the resistance of the second contact is substantially constant regardless of temperature. [Effects of the Invention]

[0008] The semiconductor element according to the present invention has a main transistor, a sub-transistor connected to one end of the main transistor, and a resistive element connected between the other end of the main transistor and the sub-transistor, and the width of the channel layer of the sub-transistor and the width of the channel layer of the main transistor are designed to be different. Furthermore, by combining the two-dimensional electron gas of the resistive element with a contact, the temperature coefficient of resistance can be made to converge to zero. As a result, excessive current flowing through the main transistor or sub-transistor can be detected. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a circuit diagram showing a schematic configuration of a semiconductor device according to an embodiment of the present invention. [Figure 2] 1 is a plan view showing a schematic configuration of a semiconductor element according to an embodiment of the present invention; [Figure 3] FIG. 3 is a cross-sectional view taken along line AA' in FIG. 2. [Figure 4] FIG. 3 is a cross-sectional view taken along line AA' in FIG. 2. [Figure 5] 1 is a plan view illustrating a peripheral circuit region of a semiconductor device according to an embodiment of the present invention; [Figure 6] FIG. 3 is a cross-sectional view taken along line BB' in FIG. 2. [Figure 7] FIG. 3 is a cross-sectional view taken along the line CC' in FIG. [Figure 8] FIG. 3 is a cross-sectional view taken along the line DD' in FIG. 2. [Figure 9] 3 is a cross-sectional view corresponding to line DD' of FIG. 2 illustrating a semiconductor device according to some embodiments of the present invention. [Figure 10] 1 is a circuit diagram illustrating a resistor element of a semiconductor device according to an embodiment of the present invention. [Figure 11] 4 is a graph showing a resistance value depending on a temperature change of a resistor element of a semiconductor device according to an embodiment of the present invention; [Figure 12] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 13] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 14] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 15] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 16] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 17] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 18] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 19] FIG. 1 is a plan view illustrating peripheral circuit elements of a semiconductor device according to some embodiments of the present invention. [Figure 20] FIG. 1 is a circuit diagram illustrating a resistive element of a semiconductor device according to some embodiments of the present invention. [Figure 21] 21 is a plan view showing peripheral circuit elements including the resistive element of FIG. 20. FIG. [Figure 22] FIG. 21 is a cross-sectional view taken along the line EE' in FIG. 20. [Figure 23] 21 is a plan view showing peripheral circuit elements including the resistive element of FIG. 20. FIG. [Figure 24] FIG. 24 is a cross-sectional view taken along line FF' in FIG. 23. [Figure 25] FIG. 1 is a circuit diagram illustrating a resistive element of a semiconductor device according to some embodiments of the present invention. [Figure 26] 26 is a plan view showing peripheral circuit elements including the resistive element of FIG. 25. FIG. [Figure 27] FIG. 27 is an enlarged plan view showing the resistance element of FIG. 26. [Figure 28] FIG. 28 is a cross-sectional view taken along line GG' in FIG. 27. [Figure 29] 28 is a cross-sectional view of a resistor element of a semiconductor device according to some embodiments of the present invention, corresponding to line GG' in FIG. 27. [Figure 30] 1A and 1B are plan views illustrating resistor elements of semiconductor devices according to some embodiments of the present invention. [Figure 31] FIG. 1 is a circuit diagram illustrating a resistive element of a semiconductor device according to some embodiments of the present invention. [Figure 32] FIG. 32 is an enlarged plan view showing the resistance element of FIG. 31. [Figure 33] FIG. 1 is a circuit diagram illustrating a resistive element of a semiconductor device according to some embodiments of the present invention. [Figure 34] FIG. 33 is an enlarged plan view showing the resistor element of FIG. 32. [Figure 35] 1 is a circuit diagram illustrating a semiconductor device according to some embodiments of the present invention. [Figure 36] FIG. 36 is a plan view showing the semiconductor device according to the embodiment of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0010] Next, specific examples of embodiments for carrying out the semiconductor device according to the present invention will be described with reference to the drawings.

[0011] As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In order to clearly describe the present invention, parts that are not relevant to the description will be omitted, and the same reference numerals will be used throughout the specification to refer to the same or similar components. Furthermore, the size and thickness of each component shown in the drawings are arbitrarily shown for the convenience of explanation, and the present invention is not necessarily limited to those shown. In the drawings, the thickness of some layers and regions are exaggerated for clarity. In the drawings, the thicknesses of some layers and regions are exaggerated for the sake of convenience. Furthermore, when a layer, film, region, plate, or other part is said to be "on" another part, this does not only mean that it is "directly on" that other part, but also includes the case where there is another part in between. Conversely, when one part is said to be "directly above" another, it means that there is no other part in between. Furthermore, being "above" a reference part means being located above or below the reference part, and does not necessarily mean being located "above" in the opposite direction of gravity.

[0012] Furthermore, throughout the specification, when a part is said to "comprise" a certain element, this does not mean that it excludes other elements, but that it may further include other elements, unless specifically stated to the contrary. Ordinal numbers such as "first," "second," "third," etc. may be used in labels of particular elements, steps, etc. simply to distinguish them from one another. Terms not described using "first," "second," etc. in the specification may still be referred to as "first" or "second" in the claims. Also, terms referred to in a particular ordinal number (e.g., "first" in a particular claim) may be described elsewhere in another ordinal number (e.g., "second" in the specification or in another claim).

[0013] FIG. 1 is a circuit diagram showing a schematic configuration of a semiconductor device according to an embodiment of the present invention. As shown in FIG. 1, a semiconductor device according to an embodiment of the present invention includes a main device region MA including a main transistor 100, a peripheral circuit region PA including peripheral circuit elements 300, and a sensing unit 500. The main element region MA is a region of the semiconductor element in which the main transistor 100 is arranged. For example, the main transistor 100 is a normally-off high electron mobility transistor (HEMT). However, the main transistor 100 is not limited thereto and may be a normally-on high electron mobility transistor.

[0014] The main transistor 100 includes a gate electrode G, a drain electrode D, and a source electrode S. The main transistor 100 controls a drain-source current between a drain electrode D and a source electrode S by a gate signal applied to a gate electrode G. For example, when a turn-on signal is applied to the gate electrode G of the main transistor 100, a current flows from the drain electrode D to the source electrode S. This causes current to flow from node N1 through the main transistor 100 to node N2.

[0015] The drain electrode D is supplied with a power supply voltage VD, and the source electrode S is supplied with a power supply voltage VS. The magnitude of the power supply voltage VS is smaller than the magnitude of the power supply voltage VD. For example, the power supply voltage VS is the ground voltage. Here, the drain electrode D refers to the main drain electrode (175m in FIG. 2) of the main transistor 100 according to an embodiment, and the source electrode S refers to the main source electrode (173m in FIG. 2) of the main transistor 100 according to an embodiment. Also, the power supply voltage VD refers to the voltage supplied to the main drain electrode of the main transistor 100 (175m in FIG. 2). The power supply voltage VS means the voltage supplied to the main source electrode of the main transistor 100 (173m in FIG. 2).

[0016] The peripheral circuit area PA of the semiconductor device according to an embodiment refers to an area where the peripheral circuit elements 300 are arranged. Specifically, the peripheral circuit element 300 of the semiconductor device according to one embodiment includes a sub-transistor 310 electrically connected to one end of the main transistor 100 and a resistive element 320 electrically connected between the other end of the main transistor 100 and the sub-transistor 310. The peripheral circuit element 300 according to one embodiment serves as a current divider. However, without being limited thereto, for example, the peripheral circuit elements 300 may include passive elements such as capacitors or inductors, or active elements such as transistors, diodes, logic elements, etc. As another example, the peripheral circuit element 300 may include circuits such as a voltage divider, a voltage clipper, and a protection element for the main transistor 100.

[0017] Hereinafter, a case where a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-transistor 310 and a resistor element 320 will be described. The sub-transistor 310 includes a gate electrode G1, a drain electrode D1, and a source electrode S1. The sub-transistor 310 controls the drain-source current between the drain electrode D1 and the source electrode S1 by a gate signal applied to the gate electrode G1. For example, when a turn-on signal is applied to the gate electrode G1 of the sub-transistor 310, current flows from the drain electrode D1 to the source electrode S1. The sub-transistor 310 is electrically connected to one end of the main transistor 100 . The sub-transistor 310 is electrically connected between a resistive element 320 (eg, a resistor) and the main transistor 100 . For example, the drain electrode D1 of the sub-transistor 310 is electrically connected to the drain electrode D of the main transistor 100 via a first node N1, and the second electrode S2 of the sub-transistor 310 is electrically connected to the resistive element 320 via a node N4. The drain electrode D1 of the sub-transistor 310 is electrically connected to a first power supply that supplies a power supply voltage VD through a first node N1. In addition, the second electrode S2 of the sub-transistor 310 is electrically connected to the sensing unit 500 through a node N4.

[0018] Furthermore, the gate electrode G1 of the sub-transistor 310 is electrically connected to the gate electrode G of the main transistor 100 via a node N3. As a result, the same signal is applied to the gate electrode G1 of the sub-transistor 310 and the gate electrode G of the main transistor 100. For example, when a turn-on signal is applied to the gate electrode G of the main transistor 100, the same turn-on signal is applied to the gate electrode G1 of the sub-transistor 310. Alternatively, when a turn-off signal is applied to the gate electrode G of the main transistor 100, the same turn-off signal is applied to the gate electrode G1 of the sub-transistor 310. Therefore, when a turn-on signal is applied to the gate electrode G of the main transistor 100 and a current flows from the drain electrode D to the source electrode S of the main transistor 100, a current also flows from the drain electrode D1 to the source electrode S1 of the sub-transistor 310.

[0019] That is, when the main transistor 100 is turned on, the sub-transistor 310 is also turned on. Here, the drain electrode D1 of the sub-transistor 310 refers to the sub-drain electrode (175s in FIG. 2) of the sub-transistor 310 according to one embodiment, the source electrode S1 of the sub-transistor 310 refers to the sensing electrode (SE in FIG. 2) of the sub-transistor 310 according to one embodiment, and the gate electrode G1 of the sub-transistor 310 refers to the sub-gate electrode (155s in FIG. 2) of the sub-transistor 310 according to one embodiment. The sub-transistor 310 is separated by an isolation structure (160 in FIG. 2) and is configured as a part of the main transistor 100 located in the peripheral circuit area PA, but is not limited thereto.

[0020] The resistive element 320 electrically connects the main transistor 100 and the sub-transistor 310 together. As shown in FIG. 1, one end of the resistance element 320 is electrically connected to the source electrode S of the main transistor 100 via a node N2. One end of the resistance element 320 is electrically connected to the main source electrode (175s in FIG. 2) of the main transistor 100 via a node N2. Furthermore, one end of the resistance element 320 is connected to a second power supply having a power supply voltage VS via a node N2. As a result, the power supply voltage VS is supplied to one end of the resistance element 320. The other end of the resistive element 320 is electrically connected to the source electrode S1 of the sub-transistor 310 and the sensing unit 500 through a node N4. Resistive element 320, according to one embodiment, corresponds to the resistance between the sense electrode (SE in FIG. 2) and the sub-drain electrode (175s in FIG. 2). Also, node N4 is a point corresponding to the sensing electrode (SE in FIG. 2). This will be described later with reference to FIGS.

[0021] The sensing portion 500 (eg, sensing circuit) is electrically connected to the sub-transistor 310 and the resistive element 320 . For example, the sensing unit 500 is electrically connected to the source electrode S1 of the sub-transistor 310 and one end of the resistive element 320 via a node N4. The sensing unit 500 senses the voltage of the source electrode S1 of the sub-transistor 310 and / or one end of the resistance element 320 (for example, the sense voltage VCS at the node N4). The sensing unit 500 according to an embodiment detects if excessive current flows through the main transistor 100 and / or the sub-transistor 310 based on the sensed voltage.

[0022] Specifically, when the main transistor 100 is turned on, current flows from the drain electrode D to the source electrode S of the main transistor 100 . Meanwhile, as described above, since the gate electrode G of the main transistor 100 and the gate electrode G1 of the sub-transistor 310 are electrically connected, when the main transistor 100 is turned on, the sub-transistor 310 is also turned on. Thus, when the sub-transistor 310 is turned on, current flows from the drain electrode D1 to the source electrode S1 of the sub-transistor 310 together, through the node N4, and through the resistive element 320. Therefore, a voltage drop occurs across the resistive element 320 in proportion to the magnitude of the current flowing through the sub-transistor 310 . The magnitude of the current flowing through the sub-transistor 310 determines the sense voltage VCS at the node N4.

[0023] In addition, the magnitude of the current flowing through the main transistor 100 and the magnitude of the current flowing through the sub-transistor 310 are determined by a current divider. Therefore, the sense voltage VCS at the node N4 is determined depending on the magnitude of the current flowing through the main transistor 100. For example, if excessive current flows in the main transistor 100 and / or the sub-transistor 310, the sense voltage VCS at the node N4 is greater than the sense voltage VCS of the pre-stored range. Therefore, the sensing unit 500 can calculate the magnitude of the current flowing through the main transistor 100 and / or the sub-transistor 310 based on the magnitude of the sensed sense voltage VCS. That is, when the sensing unit 500 detects a sense voltage VCS in a range greater than the voltage range stored in advance, it can detect whether an excessive current flows through the main transistor 100 and / or the sub-transistor 310.

[0024] The sensing unit 500 according to an example embodiment controls the semiconductor device to perform additional operations based on the detected signal (eg, current and / or voltage). For example, if an excessive current flows through the main transistor 100 and / or the sub-transistor 310, the sensing unit 500 further functions to stop driving the semiconductor device. Alternatively, the sensing unit 500 may further perform a function of compensating and protecting the current flowing through the main transistor 100 and / or the sub-transistor 310 so that the current operates within a preset range. Here, the compensation circuit refers to a circuit that compensates for the operating loss of the main transistor 100 and / or the sub-transistor 310 so that the semiconductor device operates within a preset range. The protection element may be a circuit that prevents a semiconductor element including the main transistor 100 from being destroyed, such as an overcurrent protection element, an overvoltage protection element, an overtemperature protection element, an open circuit protection element, an electrostatic discharge protection element, an LDO (Low Drop-output) regulator, etc.

[0025] Hereinafter, a main transistor 100 of a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. FIG. 2 is a plan view showing a schematic configuration of a semiconductor device according to an embodiment of the present invention, and FIGS. 3 and 4 are cross-sectional views taken along line AA' in FIG. FIG. 3 illustrates a semiconductor device according to an embodiment of the present invention in an off state, and FIG. 4 illustrates a semiconductor device according to an embodiment of the present invention in an on state. Referring to FIG. 2, a peripheral circuit region PA of a semiconductor device according to an embodiment of the present invention is disposed apart from a main device region MA.

[0026] For example, the peripheral circuit region PA is disposed apart from the main element region MA in the second direction (Y direction), but is not limited to this. For example, the peripheral circuit region PA may be spaced apart from the main element region MA in the first direction (X direction) or may surround the side of the main element region MA. Of course, many other modifications are possible. In one embodiment, the isolation structure 160 is disposed between the peripheral circuit region PA and the main device region MA, but is not limited thereto. The semiconductor device includes a channel layer 132 , a gate electrode layer 155 , and a drain electrode layer 175 . A portion of the channel layer 132, a portion of the gate electrode layer 155, and a portion of the drain electrode layer 175 are disposed in the main element region MA. The other parts of the channel layer 132, the gate electrode layer 155, and the drain electrode layer 175 are disposed in the peripheral circuit area PA.

[0027] 2 and 3, the main transistor 100 of the semiconductor device includes a main channel layer 132m, a barrier layer 136 disposed on the main channel layer 132m, a main gate electrode 155m disposed on the barrier layer 136, a gate semiconductor layer 152m disposed between the barrier layer 136 and the main gate electrode 155m, a protective layer 140 disposed on the barrier layer 136, and a main source electrode 173m and a main drain electrode 175m disposed spaced apart from each other on the main channel layer 132m. The main channel layer 132m is a part of the channel layer 132 disposed in the main element region MA. The main gate electrode 155m is a part of the gate electrode layer 155 arranged in the main element region MA. The main source electrode 173m is a part of the source electrode layer 173 arranged in the main element area MA, and the sensing electrode SE is a part of the source electrode layer 173 arranged in the peripheral circuit area PA.

[0028] The main channel layer 132m is a layer that forms a channel between the main source electrode 173m and the main drain electrode 175m, and a two-dimensional electron gas (2DEG) region 134m is disposed inside the main channel layer 132m. Specifically, the 2DEG region 134m is disposed at the interface between the main channel layer 132m and the barrier layer 136 in a region relatively close to the main channel layer 132m. The 2DEG region 134m is located within the main drift region DTRm of the main channel layer 132m. The 2DEG region 134m represents a group of electrons that can move freely in two dimensions (e.g., the xy plane direction) but cannot move in the other dimension (e.g., the z direction) and are tightly confined within the two dimensions.

[0029] That is, the 2DEG region 134m exists in a three-dimensional space in the form of a two-dimensional piece of paper (for example, a plane). Thus, the movement of electrons in the 2DEG region 134m may be understood and / or predicted by the two-dimensional electron gas model, and may be referred to as a two-dimensional electron gas. Such a 2DEG region 134m mainly appears in a semiconductor heterojunction structure, and in the semiconductor device according to the embodiment of the present invention, it occurs at the interface between the main channel layer 132m and the barrier layer 136. For example, a 2DEG region 134m is generated in the main channel layer 132m adjacent to the barrier layer 136.

[0030] The main channel layer 132m may include one or more selected materials from III-V group materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The main channel layer 132m may be a single layer (eg, a homogeneous layer formed in the same deposition or growth process) or multiple layers. The main channel layer (132m) is x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the main channel layer 132m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The main channel layer 132m may be a layer doped with impurities or an undoped layer. The thickness of the main channel layer 132m may be about several hundred nanometers or less.

[0031] The main channel layer 132m is disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 are disposed between the substrate 110 and the main channel layer 132m. The substrate 110, the seed layer 121, and the buffer layer 120 are layers necessary for forming the main channel layer 132m, but may be omitted in some cases. For example, when a substrate made of GaN is used for the main channel layer 132m, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 may be omitted. Considering that a substrate made of GaN is relatively expensive, the main channel layer 132m containing GaN can be grown using a substrate 110 made of Si. At this time, it may not be easy to grow the main channel layer 132m directly on the substrate 110 because the lattice structure of Si and the lattice structure of GaN are different. As a result, the seed layer 121 and the buffer layer 120 are first grown on the substrate 110, and then the main channel layer 132m is grown on the buffer layer 120. Additionally, at least one of the substrate 110, the seed layer 121, and the buffer layer 120 may be used in the manufacturing process and then removed in the final structure of the semiconductor device.

[0032] The substrate 110 comprises a semiconductor material. For example, the substrate 110 may include sapphire, Si, SiC, AlN, GaN, or a combination thereof. The substrate 110 may be a silicon on insulator (SOI) substrate. However, the material of the substrate 110 is not limited to this. In some cases, the substrate 110 may include an insulating material. For example, after a plurality of layers including the main channel layer 132m are formed on a semiconductor substrate, the semiconductor substrate can be removed and replaced with an insulating substrate.

[0033] A seed layer 121 is disposed directly above the substrate 110 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the substrate 110 and the seed layer 121 . The seed layer 121 may be a layer that acts as a seed for growing the buffer layer 120 and may be composed of a crystal lattice structure that serves as a seed for the buffer layer 120 . The buffer layer 120 is disposed directly above the seed layer 121 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the seed layer 121 and the buffer layer 120 . The seed layer 121 may include one or more selected materials from III-V group materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The seed layer 121 is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the seed layer 121 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0034] The buffer layer 120 is disposed on the seed layer 121 . The buffer layer 120 is disposed between the seed layer 121 and the main channel layer 132m. The buffer layer 120 is a layer for reducing the difference in lattice constant and thermal expansion coefficient between the seed layer 121 and the main channel layer 132m, or for preventing leakage current from flowing through the main channel layer 132m. For example, the buffer layer 120 may consist of one or more layers comprising a crystalline material with a lattice constant between the seed layer 121 and the main channel layer 132m (the lattice constant may be constant or gradually varied). The buffer layer 120 may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The buffer layer 120 is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the buffer layer 120 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof.

[0035] The buffer layer 120 of the semiconductor device includes a superlattice layer 124 disposed on the seed layer 121 and a high-resistivity layer 126 disposed on the superlattice layer 124 . A superlattice layer 124 and a high-resistivity layer 126 are disposed in sequence on the substrate 110 . The superlattice layer 124 is disposed on the seed layer 121 . The superlattice layer 124 is disposed directly above the seed layer 121 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the seed layer 121 and the superlattice layer 124 . The superlattice layer 124 is a layer for reducing the difference in lattice constant and thermal expansion coefficient between the substrate 110 and the main channel layer 132m, thereby reducing the tensile stress and compressive stress generated between the substrate 110 and the main channel layer 132m, and reducing the stress between all layers formed by growth in the final structure of the semiconductor device according to one embodiment.

[0036] The superlattice layer 124 may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The superlattice layer 124 is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the superlattice layer 124 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. According to one embodiment, the superlattice layer 124 may be made up of multiple layers, each of which has alternating layers of different materials. For example, the superlattice layer 124 has a structure in which layers made of AlGaN and layers made of AlN are repeatedly stacked. That is, AlGaN / AlN / AlGaN / AlN / AlGaN / AlN are sequentially stacked to form a superlattice layer. The number of AlGaN layers and GaN layers constituting the superlattice layer 124 can be varied in various ways, and the materials constituting the superlattice layer 124 can be varied in various ways. As another example, the superlattice layer 124 has a structure in which layers made of AlGaN and layers made of GaN are repeatedly stacked. That is, AlGaN / GaN / AlGaN / GaN / AlGaN / GaN are sequentially stacked to form a superlattice layer. In an exemplary embodiment, when the superlattice layer 124 includes GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, the superlattice layer 124 has n-type semiconductor properties in which the concentration of carrier electrons is greater than the concentration of carrier holes, but is not limited to this.

[0037] A high resistance layer 126 is disposed on the superlattice layer 124 . A high resistance layer 126 is disposed directly above the superlattice layer 124 . However, the present invention is not limited to this, and other predetermined layers may be further disposed between the superlattice layer 124 and the high resistance layer 126 . The high resistance layer 126 is disposed between the superlattice layer 124 and the main channel layer 132m. The high resistance layer 126 is a layer for preventing a leakage current from flowing through the main channel layer 132m, thereby preventing deterioration of the semiconductor device according to the embodiment of the present invention. The high resistance layer 126 may be made of a material with low conductivity so as to provide electrical insulation between the substrate 110 and the main channel layer 132m. The high resistance layer may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The high resistance layer 126 is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the high-resistivity layer 126 may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The high resistance layer 126 may consist of a single layer or multiple layers. In an exemplary embodiment, when the high-resistivity layer 126 comprises GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, the high-resistivity layer 126 has n-type semiconductor properties in which the concentration of electrons is greater than the concentration of holes, but is not limited to this.

[0038] A barrier layer 136 is disposed on the main channel layer 132m. The barrier layer 136 is disposed directly above the main channel layer 132m. However, the present invention is not limited to this, and other predetermined layers may be further disposed between the main channel layer 132m and the barrier layer 136. The region of the main channel layer 132m that overlaps with the barrier layer 136 between the main source electrode 173m and the main drain electrode 175m becomes a main drift region DTRm. The main drift region DTRm is disposed between a main source electrode 173m and a main drain electrode 175m. The main drift region DTRm refers to a region where carriers move when a potential difference occurs between the main source electrode 173m and the main drain electrode 175m. According to one embodiment, a semiconductor device is turned on / off depending on whether a voltage is applied to the main gate electrode 155m and / or the magnitude of the voltage applied to the main gate electrode 155m, thereby allowing or blocking the movement of carriers in the main drift region DTRm.

[0039] The barrier layer 136 may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The barrier layer 136 is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). The barrier layer 136 may include GaN, InN, AlGaN, AlInN, InGaN, AlN, AlInGaN, or a combination thereof, or the like. The energy band gap of the barrier layer 136 can be adjusted by the composition ratio of Al and / or In. The barrier layer 136 is doped with a predetermined impurity. At this time, the impurity doped into the barrier layer 136 is a p-type dopant that can provide holes. For example, the impurity doped into the barrier layer 136 may be magnesium (Mg). By increasing or decreasing the impurity doping concentration of the barrier layer 136, the threshold voltage, on-resistance, etc. of the semiconductor device according to the embodiment of the present invention can be adjusted.

[0040] The barrier layer 136 includes a semiconductor material having different properties from the main channel layer 132m. The barrier layer 136 may differ from the main channel layer 132m in at least one of polarization characteristics, energy band gap, and lattice constant. For example, the barrier layer 136 includes a material having a different energy bandgap than the main channel layer 132m. In this case, the barrier layer 136 has a higher energy band gap than the main channel layer 132m and a higher electric susceptibility than the main channel layer 132m. The barrier layer 136 induces a 2DEG region 134m in the main channel layer 132m, which has a relatively low electric polarization. In this respect, the barrier layer 136 may be referred to as a channel supply layer or a two-dimensional electron gas supply layer. The 2DEG region 134m is formed within the portion of the main channel layer 132m located below the interface between the main channel layer 132m and the barrier layer 136. The 2DEG region 134m has very high electron mobility. The barrier layer 136 may consist of a single layer or multiple layers. If the barrier layer 136 is made up of multiple layers, the materials of each layer that makes up the multiple layers may have different energy bandgaps. In this case, the layers constituting the barrier layer 136 are arranged so that the closer to the main channel layer 132m the layers are, the larger the energy band gap becomes.

[0041] The main gate electrode 155 m is disposed on the barrier layer 136 . The main gate electrode 155m overlaps a portion of the barrier layer 136 in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The main gate electrode 155m overlaps a part of the main drift region DTRm of the main channel layer 132m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The main gate electrode 155m is disposed between the main source electrode 173m and the main drain electrode 175m. The main gate electrode 155m is spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main gate electrode 155m is located closer to the main source electrode 173m than the main drain electrode 175m. That is, the distance between the main gate electrode 155m and the main source electrode 173m is smaller than the distance between the main gate electrode 155m and the main drain electrode 175m, but is not limited thereto. The main gate electrode 155m includes a conductive material. For example, the main gate electrode 155m may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride.

[0042] For example, the main gate electrode 155m may be made of titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum carbonitride ( The metals may include, but are not limited to, titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof. The main gate electrode 155m may be made up of a single layer or multiple layers.

[0043] The gate semiconductor layer 152m is disposed between the barrier layer 136 and the main gate electrode 155m. That is, a gate semiconductor layer 152m is disposed on the barrier layer 136, and a main gate electrode 155m is disposed on the gate semiconductor layer 152m so as to cover at least a portion of the gate semiconductor layer 152m. The main gate electrode 155m makes a Schottky contact or an ohmic contact with the gate semiconductor layer 152m. The gate semiconductor layer 152m overlaps the main gate electrode 155m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). At this time, the gate semiconductor layer 152m completely overlaps the main gate electrode 155m in the vertical direction (for example, in the thickness direction of the main channel layer 132m), and the upper surface of the gate semiconductor layer 152m is entirely covered by the main gate electrode 155m. That is, the gate semiconductor layer 152m has substantially the same planar shape as the main gate electrode 155m. However, the present invention is not limited to this, and as another example, the main gate electrode 155m may be disposed so as to cover a part of the gate semiconductor layer 152m.

[0044] The gate semiconductor layer 152m is disposed between a main source electrode 173m and a main drain electrode 175m. The gate semiconductor layer 152m is spaced apart from a main source electrode 173m and a main drain electrode 175m. The gate semiconductor layer 152m is disposed closer to the main source electrode 173m than the main drain electrode 175m. That is, the distance between the gate semiconductor layer 152m and the main source electrode 173m is smaller than the distance between the gate semiconductor layer 152m and the main drain electrode 175m, but is not limited thereto. The gate semiconductor layer 152m overlaps the main gate electrode 155m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). For example, the gate semiconductor layer 152m completely overlaps the main gate electrode 155m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). That is, the side surface of the gate semiconductor layer 152m is aligned with the side surface of the main gate electrode 155m. However, the present invention is not limited to this, and the gate semiconductor layer 152m may be partially overlapped with the main gate electrode 155m.

[0045] The gate semiconductor layer 152m may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The gate semiconductor layer 152m is made of "Al x In y Ga 1-x-y N" (0≦x≦1, 0≦y≦1, x+y≦1). For example, the gate semiconductor layer 152m may include AlN, GaN, InN, InGaN, AlGaN, AlInN, AlInGaN, or a combination thereof. The gate semiconductor layer 152 m includes a material having a different energy bandgap than the barrier layer 136 . For example, the gate semiconductor layer 152m includes GaN, and the barrier layer 136 includes AlGaN. The gate semiconductor layer 152m is doped with a predetermined impurity. At this time, the impurity doped into the gate semiconductor layer 152m is a p-type dopant capable of providing holes. For example, the gate semiconductor layer 152m includes GaN doped with p-type impurities. That is, the gate semiconductor layer 152m can be made of a p-GaN layer. However, the gate semiconductor layer 152m is not limited to this and may be, for example, a p-AlGaN layer. The impurity doped into the gate semiconductor layer 152m may be magnesium (Mg). In this case, if an impurity (e.g., magnesium) doped in the gate semiconductor layer 152m combines with an adjacent specific element, the hole concentration in the gate semiconductor layer 152m decreases, which may degrade the characteristics of the semiconductor device. The gate semiconductor layer 152m is made up of a single layer or multiple layers.

[0046] The gate semiconductor layer 152m forms a depletion region DPRm in the main channel layer 132m. The depletion region DPRm is located within the main drift region DTRm and has a width narrower than that of the main drift region DTRm. By disposing the gate semiconductor layer 152m having an energy band gap different from that of the barrier layer 136 on the barrier layer 136, the energy band level of the portion of the barrier layer 136 overlapping with the gate semiconductor layer 152m becomes higher. As a result, a depletion region DPRm is formed in the region of the main channel layer 132m that overlaps with the gate semiconductor layer 152m. The depletion region DPRm may be a region in the channel path of the main channel layer 132m where the 2DEG region 134m is not formed or has a lower electron concentration than the remaining region. That is, the depletion region DPRm means a region in the main drift region DTRm where the flow of the 2DEG region 134m is cut off. Due to the occurrence of the depletion region DPRm, no current flows between the main source electrode 173m and the main drain electrode 175m, and the channel path is cut off. Therefore, the semiconductor device according to the embodiment of the present invention has a normally off characteristic. Therefore, the semiconductor device according to the embodiment of the present invention may be a normally-off high electron mobility transistor (HEMT).

[0047] As shown in FIG. 3, in a normal state where no voltage is applied to the main gate electrode 155m, a depletion region DPRm exists, and the semiconductor device according to the embodiment of the present invention is in an off state. As shown in FIG. 4, when a voltage equal to or greater than a threshold voltage is applied to the main gate electrode 155m, the depletion region DPRm disappears, and the 2DEG region 134m is not disconnected but connected within the main drift region DTRm. That is, the 2DEG region 134m is formed over the entire channel path between the main source electrode 173m and the main drain electrode 175m, and the semiconductor device is turned on. In summary, a semiconductor device includes semiconductor layers with different electric polarization characteristics, and a semiconductor layer with a relatively large polarizability induces a 2DEG region 134m in another semiconductor layer heterojunctioned therewith. Such a 2DEG region 134m can be used as a channel between the main source electrode 173m and the main drain electrode 175m, and the flow in such a 2DEG region 134m can be turned on or off by controlling the bias voltage applied to the main gate electrode 155m. In the gate-off state (for example, when a voltage equal to or greater than the threshold voltage is not applied to the main gate electrode 155m), the flow in the 2DEG region 134m is blocked, and no current flows between the main source electrode 173m and the main drain electrode 175m. In the gate-on state (for example, when a voltage equal to or greater than the threshold voltage is applied to the main gate electrode 155m), the current continues to flow through the 2DEG region 134m, causing a current to flow between the main source electrode 173m and the main drain electrode 175m.

[0048] Although the semiconductor device according to the embodiment of the present invention is a normally-off high electron mobility transistor in the above description, the present invention is not limited thereto. For example, a semiconductor device according to an embodiment of the present invention may be a normally-on high electron mobility transistor. In the case of a normally-on high electron mobility transistor, the gate semiconductor layer 152m is omitted, so that the main gate electrode 155m is located directly above the barrier layer 136. That is, the main gate electrode 155 m contacts the barrier layer 136 . In this structure, when no voltage is applied to the main gate electrode 155m, the 2DEG region 134m can be used as a channel, and a current flows between the main source electrode 173m and the main drain electrode 175m. Furthermore, when a negative voltage is applied to the main gate electrode 155m, a depletion region DPRm occurs below the main gate electrode 155m, where the current in the 2DEG region 134m is cut off.

[0049] The seed layer 121, the superlattice layer 124, the high resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152m described above are stacked on the substrate 110 in this order. In the semiconductor device according to the embodiment of the present invention, at least one of the seed layer 121, the superlattice layer 124, the high resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152m may be omitted. The seed layer 121, the superlattice layer 124, the high-resistance layer 126, the main channel layer 132m, the barrier layer 136, and the gate semiconductor layer 152m may be made of the same semiconductor material, but the material composition ratio of each layer may differ depending on the role of each layer and the performance required for the semiconductor device.

[0050] A protective layer 140 is disposed over the barrier layer 136 and the main gate electrode 155m. The protective layer 140 covers the top and side surfaces of the main gate electrode 155m and the side surfaces of the gate semiconductor layer 152m. The lower surface of the protective layer 140 contacts the barrier layer 136 and the main gate electrode 155m. As a result, the barrier layer 136, the gate semiconductor layer 152m, and the main gate electrode 155m are protected by the protective layer 140. However, the present invention is not limited thereto, and the main gate electrode 155m may be connected to the gate semiconductor layer 152m through the protective layer 140, and the protective layer 140 may not cover the upper surface of the main gate electrode 155m. Alternatively, the lower surface of the protective layer 140 may contact the gate semiconductor layer 152m. The protective layer 140 includes an insulating material. For example, the protective layer 140 may include an oxide such as SiO2 or Al2O3. As another example, the protective layer 140 can include a nitride such as SiN or an oxynitride such as SiON. Although the protective layer 140 is shown as being made up of a single layer in FIGS. 3 and 4, it is not limited thereto, and the protective layer 140 may be made up of multiple layers containing different materials.

[0051] A main source electrode 173m and a main drain electrode 175m are disposed on the main channel layer 132m. The main source electrode 173m and the main drain electrode 175m are in contact with the main channel layer 132m and are electrically connected to the main channel layer 132m. The main source electrode 173m and the main drain electrode 175m extend in the second direction (Y direction). The main source electrode 173m and the main drain electrode 175m are spaced apart from each other, and the main gate electrode 155m and the gate semiconductor layer 152m are located between the main source electrode 173m and the main drain electrode 175m. The main gate electrode 155m and the gate semiconductor layer 152m are spaced apart from the main source electrode 173m and the main drain electrode 175m. For example, the main source electrode 173m is electrically connected to the main channel layer 132m on one side of the main gate electrode 155m, and the main drain electrode 175m is electrically connected to the main channel layer 132m on the other side of the main gate electrode 155m. The main source electrode 173m and the main drain electrode 175m are located outside the main drift region DTRm of the main channel layer 132m.

[0052] According to an embodiment, the main source electrode 173m and the main drain electrode 175m are disposed in a space recessed from at least a portion of the main channel layer 132m. As shown in FIGS. 3 and 4, the surfaces of the main source electrode 173m and the main drain electrode 175m in contact with the main channel layer 134m include the bottom and side surfaces of the main source electrode 173m and the main drain electrode 175m. The inner boundary surface between the main source electrode 173m and the main channel layer 132m is one side edge of the main drift region DTRm. Similarly, the interface between the main drain electrode 175m and the main channel layer 132m is the other edge of the main drift region DTRm. Alternatively, the main channel layer 132m may not be recessed, and the main source electrode 173m and the main drain electrode 175m may be disposed on the upper surface of the main channel layer 132m. In this case, the bottom surfaces of the main source electrode 173m and the main drain electrode 175m contact the top surface of the main channel layer 132m.

[0053] The portions of the main channel layer 132m in contact with the main source electrode 173m and the main drain electrode 175m are heavily doped. At this time, carriers passing through the 2DEG region 134m pass through the heavily doped portion of the main channel layer 132m, ie, the upper portion of the 2DEG region 134m, and are transferred to the main source electrode 173m and the main drain electrode 175m. The main source electrode 173m and the main drain electrode 175m may not be in contact with the 2DEG region 134m in the horizontal direction. Here, the horizontal direction means a direction parallel to the upper surface of the main channel layer 132 m or the barrier layer 136 . Trenches that penetrate the protective layer 140 and the barrier layer 136 and recess the upper surface of the main channel layer 132m are disposed on both sides of the main gate electrode 155m so as to be spaced apart from each other. A main source electrode 173m and a main drain electrode 175m are disposed in trenches located on both sides of the main gate electrode 155m. A main source electrode 173m and a main drain electrode 175m are formed to fill the trenches.

[0054] Within the trenches, a main source electrode 173m and a main drain electrode 175m contact the main channel layer 132m and the barrier layer 136. The main channel layer 132m forms the bottom and sidewalls of the trench, and the barrier layer 136 forms the sidewalls of the trench. Therefore, the main source electrode 173m and the main drain electrode 175m contact the top surface and side surface of the main channel layer 132m. Furthermore, the main source electrode 173 m and the main drain electrode 175 m contact the side surfaces of the barrier layer 136 . That is, the main source electrode 173m and the main drain electrode 175m cover the side surfaces of the main channel layer 132m and the barrier layer 136.

[0055] According to an embodiment, the main source electrode 173 m and the main drain electrode 175 m cover at least a part of the side surface of the protective layer 140 . For example, the main source electrode 173 m and the main drain electrode 175 m cover the entire side surfaces of the protective layer 140 . The top surfaces of the main source electrode 173 m and the main drain electrode 175 m protrude from the top surface of the passivation layer 140 . In addition, at least one of the main source electrode 173m and the main drain electrode 175m covers at least a portion of the upper surface of the passivation layer 140. However, without being limited thereto, the remaining part of the protective layer 140 may be disposed on the upper surfaces of the main source electrode 173m and the main drain electrode 175m. The main source electrode 173m and the main drain electrode 175m include a conductive material. For example, the main source electrode 173m and the main drain electrode 175m may include a metal, a metal alloy, a conductive metal nitride, a metal silicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride.

[0056] For example, the main source electrode 173m and the main drain electrode 175m may be made of titanium nitride (TiN), tantalum carbide (TaC), tantalum nitride (TaN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), tantalum titanium nitride (TaTiN), titanium aluminum nitride (TiAlN), tantalum aluminum nitride (TaAlN), tungsten nitride (WN), ruthenium (Ru), titanium aluminum (TiAl), titanium aluminum carbonitride (TiAlC-N), titanium aluminum carbide (TiAlC), titanium carbide (TiC), tantalum The metals may include, but are not limited to, titanium (Ti), tantalum (Ta), nickel (Ni), platinum (Pt), nickel platinum (Ni-Pt), niobium (Nb), niobium nitride (NbN), niobium carbide (NbC), molybdenum (Mo), molybdenum nitride (MoN), molybdenum carbide (MoC), tungsten carbide (WC), rhodium (Rh), palladium (Pd), iridium (Ir), osmium (Os), silver (Ag), gold (Au), zinc (Zn), vanadium (V), or combinations thereof. The main source electrode 173m and the main drain electrode 175m may be made of a single layer or multiple layers. The main source electrode 173m and the main drain electrode 175m are in ohmic contact with the main channel layer 132m. The regions of the main channel layer 132m that contact the main source electrode 173m and the main drain electrode 175m are doped at a higher concentration than the other regions.

[0057] Although the semiconductor device according to the embodiment of the present invention is shown in FIGS. 3 and 4 as including a pair of main source electrodes 173m and main drain electrodes 175m, the number of main source electrodes 173m and main drain electrodes 175m is not limited thereto. For example, the main source electrode 173m includes a plurality of source electrodes stacked sequentially on the main channel layer 132m in a vertical direction (e.g., in the thickness direction of the main channel layer 132m), and the main drain electrode 175m includes a plurality of drain electrodes stacked sequentially on the main channel layer 132m in a vertical direction (e.g., in the thickness direction of the main channel layer 132m). Alternatively, each of the main source electrode 173m and the main drain electrode 175m may include three or more layers.

[0058] Although not shown, the semiconductor device according to the embodiment of the present invention may further include a field dispersion layer covering at least a portion of the protective layer 140 . The field spreading layer is disposed between the main source electrode 173m and the main drain electrode 175m. The field distribution layer covers the main gate electrode 155m. The field diffusion layer overlaps the main gate electrode 155m in the vertical direction (for example, in the thickness direction of the main channel layer 132m). The field dispersion layer is electrically connected to the main source electrode 173m. For example, the field dispersion layer is connected to the main source electrode 173m. The field dispersion layer contains the same material as the main source electrode 173m and is located in the same layer as the main source electrode 173m. The field dispersion layer may be formed at the same time as the main source electrode 173m in the same process (for example, may be patterned as a layer of the same conductivity type). The boundary between the field dispersion layer and the main source electrode 173m is not sharp, and the field dispersion layer may become integral with the main source electrode 173m. However, the present invention is not limited thereto, and the field dispersion layer may be a separate component separated from the main source electrode 173m. Also, the field dispersion layer may be disposed on a different layer from the main source electrode 173m, and may be formed in a different process.

[0059] The field dispersion layer serves to disperse the electric field concentrated around the main gate electrode 155m. Specifically, in the gate-off state, the 2DEG region 134m is located with a very high concentration in the portion of the main channel layer 132m located between the main gate electrode 155m and the main source electrode 173m, and in the portion of the main channel layer 132m located between the main gate electrode 155m and the main drain electrode 175m. In this case, an electric field is concentrated in the main gate electrode 155m or the gate semiconductor layer 152m. Meanwhile, the main gate electrode 155m and the gate semiconductor layer 152m are weak to an electric field, and when an electric field is concentrated, leakage current increases, and the breakdown voltage of the main transistor 100 may decrease. At this time, the field diffusion layer diffuses the electric field concentrated around the main gate electrode 155m or the gate semiconductor layer 152m, thereby reducing leakage current and increasing the breakdown voltage VZth.

[0060] The main transistor 100 of the semiconductor device includes, but is not limited to, one main source electrode 173m, one main drain electrode 175m, and one main gate electrode 155m. For example, the main source electrode 173m, the main drain electrode 175m, and the main gate electrode 155m of the main transistor 100 of the semiconductor device according to some embodiments may each be provided in plural. For example, the main transistor 100 includes a plurality of unitary elements, each of which includes one main source electrode 173m, one main drain electrode 175m, and one main gate electrode 155m. In this case, the main source electrodes 173m of the plurality of unit cells are electrically connected to each other, the main gate electrodes 155m of the plurality of unit cells are electrically connected to each other, and the main drain electrodes 175m of the plurality of unit cells are electrically connected to each other. This allows a plurality of units to function as one main transistor 100, but is not limited to this.

[0061] In this case, the sub-transistor 310 and the resistor element 320 according to an embodiment are electrically connected to at least one of the plurality of units. As an example, the sub-transistor 310 and the resistor 320 according to an embodiment are electrically connected to the main source electrode 173m of at least one of the plurality of units, but are not limited thereto. Here, the sub-transistor 310 and the resistor element 320 are separated by an isolation structure 160 and configured as part of any one of a plurality of units located in the peripheral circuit area PA, but are not limited to this. The units are arranged in one direction (for example, a first direction (X direction)). In this case, the units adjacent to each other in one direction have shapes symmetrical to each other based on another direction (for example, the second direction (Y direction)) intersecting the one direction, but are not limited to this. For example, the plurality of units include first and second units having shapes symmetrical to each other, and the first and second units are alternately arranged along the first direction (X direction). The main source electrode 173m, the main drain electrode 175m, and the main gate electrode 155m of the first unit are sequentially arranged in a direction away from one side of the first unit along the first direction (X direction), and the main drain electrode 175m, the main gate electrode 155m, and the main source electrode 173m of the second unit are sequentially arranged in a direction away from one side of the second unit along the first direction (X direction), but are not limited to this.

[0062] Hereinafter, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention will be described with further reference to FIG. 2 and FIGS. FIG. 5 is a plan view showing a peripheral circuit region of a semiconductor device according to an embodiment of the present invention, FIG. 6 is a cross-sectional view taken along line B-B' in FIG. 2, FIG. 7 is a cross-sectional view taken along line C-C' in FIG. 2, FIG. 8 is a cross-sectional view taken along line D-D' in FIG. 2, and FIG. 9 is a cross-sectional view corresponding to line D-D' in FIG. 2 showing a semiconductor device according to an embodiment of the present invention. 2 and 5 to 9, a peripheral circuit element 300 of a semiconductor device according to an embodiment of the present invention includes a sub-transistor 310 and a resistor element 320.

[0063] The sub-transistor 310 of the semiconductor element includes a sub-channel layer 132s, a barrier layer 136 disposed on the sub-channel layer 132s, a sub-gate electrode 155s disposed on the barrier layer 136, a gate semiconductor layer 152s disposed between the barrier layer 136 and the sub-gate electrode 155s, and a sub-drain electrode 175s and a sensing electrode SE disposed on the sub-channel layer 132s. The sub-channel layer 132s refers to a portion of the channel layer 132 located in the peripheral circuit area PA. The sub-gate electrode 155s refers to a portion of the gate electrode layer 155 located in the peripheral circuit area PA. The sub-drain electrode 175s refers to a portion of the drain electrode layer 175 located in the peripheral circuit area PA. The sub-channel layer 132s serves as a layer that forms a channel between the sub-drain electrode 175s and the sensing electrode SE, and a 2DEG region 134s is disposed inside the sub-channel layer 132s.

[0064] Specifically, the 2DEG region 134s is disposed at the interface between the sub-channel layer 132s and the barrier layer 136, in a region relatively close to the sub-channel layer 132s. The 2DEG region 134s is disposed within the sub-drift region DTRs1 of the sub-channel layer 132s. The 2DEG region 134s, like the above-described 2DEG region 134m, is a region in the sub-channel layer 132s that exists in a three-dimensional space in the form of a two-dimensional piece of paper (for example, a plane). The movement of electrons in the 2DEG region 134s is understood and / or predicted by the two-dimensional electron gas model. According to an embodiment, the sub-channel layer 132s may be integrally formed with the main channel layer 132m of the main transistor 100 by the same process. The sub-channel layer 132s is located in the same layer as the main channel layer 132m. The lower surface of the sub-channel layer 132s is located at the same level as the lower surface of the main channel layer 132m, and the upper surface of the sub-channel layer 132s is located at the same level as the upper surface of the main channel layer 132m. That is, the lower surface of the sub-channel layer 132s is located at the same distance from the upper surface of the substrate 110 as the lower surface of the main channel layer 132m. In addition, the upper surface of the sub-channel layer 132s is located at the same distance from the upper surface of the substrate 110 as the upper surface of the main channel layer 132m. The thickness of the sub-channel layer 132s in the third direction (Z direction) is substantially the same as the thickness of the main channel layer 132m in the third direction (Z direction), but is not limited to this. At this time, the sub-channel layer 132s and the main channel layer 132m are separated by a separation structure 160, which will be described later.

[0065] According to an embodiment, the sub-channel layer 132s is located on one side of the main channel layer 132m. For example, as shown in FIG. 2, the sub-channel layer 132s is located on one side of the main channel layer 132m in the second direction (Y direction), but is not limited thereto. In this case, the width of the sub-channel layer 132s along the second direction (Y direction) is different from the width W1 of the main channel layer 132m along the second direction (Y direction). For example, the width of the sub-channel layer 132s along the second direction (Y direction) is smaller than the width W1 of the main channel layer 132m along the second direction (Y direction). In one embodiment, as shown in FIG. 5, the sub-channel layer 132s includes a portion (132s_P1) located between the sub-gate electrode 155s and the sub-drain electrode 175s and a portion (132s_P2) located between the sub-gate electrode 155s and the sensing electrode SE. That is, the portion 132s_P1 is located on one side of the sub-gate electrode 155s, and the portion 132s_P2 is located on the other side of the sub-gate electrode 155s. Here, portion (132s_P1) means a portion of the sub-channel layer 132s located between the sub-gate electrode 155s and the sub-drain electrode 175s, and portion (132s_P2) means a portion of the sub-channel layer 132s located between the sub-gate electrode 155s and the sensing electrode SE. In this case, the width W2 of the portion (132s_P1) along the second direction (Y direction) is greater than the width W3 of the portion (132s_P2) along the second direction (Y direction).

[0066] As shown in FIG. 6, one end of the sub-channel layer 132s contacts a sub-drain electrode 175s. The sub-channel layer 132s is electrically connected to the main drain electrode 175m via a sub-drain electrode 175s. The other end of the sub-channel layer 132s contacts the sensing electrode SE. According to an embodiment, the sub-channel layer 132s includes the same material as the main channel layer 132m located in the main element region MA. As an example, the sub-channel layer 132s may include one or more materials selected from III-V materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The sub-channel layer 132s is disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 are disposed between the substrate 110 and the sub-channel layer 132s. The substrate 110, the seed layer 121, and the buffer layer 120 are layers necessary for forming the sub-channel layer 132s, but may be omitted in some cases. According to one embodiment, the substrate 110, seed layer 121, and buffer layer 120 located in the peripheral circuit region PA may be integrally formed using the same process as the substrate 110, seed layer 121, and buffer layer 120 located in each main element region MA.

[0067] A barrier layer 136 is disposed over the sub-channel layer 132s. That is, the barrier layer 136 disposed on the main channel layer 132m further extends onto the sub-channel layer 132s. A barrier layer 136 is disposed directly above the sub-channel layer 132s. However, the present invention is not limited to this, and other predetermined layers may be further disposed between the sub-channel layer 132s and the barrier layer 136. The region of the sub-channel layer 132s that overlaps with the barrier layer 136 becomes the drift region. Specifically, the barrier layer 136 differs from the sub-channel layer 132s in at least one of polarization characteristics, energy band gap, or lattice constant, so that the barrier layer 136 induces a 2DEG region 134s in the sub-channel layer 132s, which has a relatively low electric polarization.

[0068] As shown in FIG. 6, the sub-channel layer 132s in the peripheral circuit area PA includes a sub-drift region DTRs1 between the sensing electrode SE and the sub-drain electrode 175s. That is, the sub-drift region DTRs1 refers to a region of the sub-channel layer 132s from one side of the sub-channel layer 132s in contact with the sub-drain electrode 175s to the sensing electrode SE. The sub-drift region DTRs1 refers to a region of the sub-channel layer 132s that overlaps with the barrier layer 136 between the sensing electrode SE and the sub-drain electrode 175s. For example, the boundary where the sub-drain electrode 175s and the sub-channel layer 132s intersect may be one side edge of the sub-drift region DTRs1, and the boundary where the sensing electrode SE and the sub-channel layer 132s intersect may be the other side edge of the sub-drift region DTRs1. In other words, the sub-drift region DTRs1 refers to a region where carriers move between one side of the sub-channel layer 132s in contact with the sub-drain electrode 175s in the peripheral circuit region PA and the sensing electrode SE. The sub-drift region DTRs1 according to an embodiment extends in the first direction (X direction), but is not limited thereto.

[0069] The sub-gate electrode 155s is disposed on the barrier layer 136. The sub-gate electrode 155s overlaps a portion of the barrier layer 136 in the vertical direction (for example, in the thickness direction of the sub-channel layer 132s). The sub-gate electrode 155s overlaps a part of the sub-drift region DTRs1 of the sub-channel layer 132s in the vertical direction (for example, in the thickness direction of the sub-channel layer 132s). The sub-gate electrode 155s is disposed between the sensing electrode SE and the sub-drain electrode 175s. The sub-gate electrode 155s is spaced apart from the sensing electrode SE and the sub-drain electrode 175s. For example, the sub-gate electrode 155s is located closer to the sensing electrode SE than the sub-drain electrode 175s. That is, the distance between the sub-gate electrode 155s and the sensing electrode SE is smaller than the distance between the sub-gate electrode 155s and the sub-drain electrode 175s, but is not limited to this.

[0070] According to one embodiment, the sub-gate electrode 155s may be integrated with the main gate electrode 155m of the main transistor 100. That is, the sub-gate electrode 155s can be formed integrally with the main gate electrode 155m of the main transistor 100 in the same process. The sub-gate electrode 155s is located in the same layer as the main gate electrode 155m. The lower surface of the sub-gate electrode 155s is located at the same level as the lower surface of the main gate electrode 155m, and the upper surface of the sub-gate electrode 155s is located at the same level as the upper surface of the main gate electrode 155m. That is, the bottom surface of the sub-gate electrode 155s is located at the same distance from the top surface of the substrate 110 as the bottom surface of the main gate electrode 155m. The thickness of the sub-gate electrode 155s in the third direction (Z direction) is substantially the same as the thickness of the main gate electrode 155m in the third direction (Z direction), but is not limited to this. The sub-gate electrode 155s includes a conductive material. The sub-gate electrode 155s contains the same material as the main gate electrode 155m. However, the present invention is not limited thereto, and the sub-gate electrodes 155s may include a different material from that of the main gate electrode 155m.

[0071] The gate semiconductor layer 152s is disposed between the barrier layer 136 and the sub-gate electrode 155s. The gate semiconductor layer 152s and the gate semiconductor layer 152m extend in the second direction (Y direction) and represent portions of the same gate semiconductor layer located between the barrier layer 136 and the main gate electrode 155m, and between the barrier layer 136 and the sub-gate electrode 155s. The gate semiconductor layer 152s is disposed between the barrier layer 136 and the sub-gate electrode 155s. The gate semiconductor layer 152s overlaps the sub-gate electrode 155s in a vertical direction (for example, in the thickness direction of the sub-channel layer 132s). Furthermore, the gate semiconductor layer 152s overlaps the main gate electrode 155m and the isolation structure 160 in a vertical direction (for example, in the thickness direction of the sub-channel layer 132s), but is not limited thereto. The sub-gate electrode 155s makes a Schottky contact or an ohmic contact with the gate semiconductor layer 152s. The structural shapes of the gate semiconductor layer 152s and the sub-gate electrode 155s are substantially the same as the structural shapes of the gate semiconductor layer 152s and the main gate electrode 155m. However, the present invention is not limited thereto, and the gate semiconductor layer 152s may be omitted in the sub-transistor 310. In this case, the lower surface of the sub-gate electrode 155s contacts the barrier layer 136.

[0072] The gate semiconductor layer 152s according to one embodiment is disposed between the sensing electrode SE and the sub-drain electrode 175s. The gate semiconductor layer 152s is spaced apart from the sensing electrode SE and the sub-drain electrode 175s. The gate semiconductor layer 152s is located closer to the sensing electrode SE than the sub-drain electrode 175s. That is, the distance between the gate semiconductor layer 152s and the sensing electrode SE is smaller than the distance between the gate semiconductor layer 152s and the sub-drain electrode 175s, but is not limited thereto. The gate semiconductor layer 152s forms depletion regions DPRs in the sub-channel layer 132s. The depletion region DPRs is located within the sub-drift region DTRs1. Here, the depletion region DPRs means a region where the flow of the 2DEG region 134s is cut off in the sub-drift region DTRs1. Due to the occurrence of the depletion region DPRs, no current flows between the sensing electrode SE and the sub-drain electrode 175s, and the channel path is blocked.

[0073] A protective layer 140 is disposed over the barrier layer 136 . The lower surface of the protective layer 140 contacts the barrier layer 136 . The protective layer 140 according to an embodiment is formed integrally with the protective layer 140 of the main element region MA through the same process. That is, the protective layer 140 is located on the barrier layer 136 in the main element region MA and the barrier layer 136 in the peripheral circuit region PA. The sub-drain electrode 175s and the sensing electrode SE are disposed on one side and the other side of the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode SE contact the sub-channel layer 132s and are electrically connected to the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode SE are located outside the sub-drift region DTRs1. The interface between the sub-drain electrode 175s and the sub-channel layer 132s may be one side edge of the sub-drift region DTRs1. Similarly, the interface between the sensing electrode SE and the sub-channel layer 132s may be the other edge of the sub-drift region DTRs1.

[0074] The sub-drain electrode 175s extends in the second direction (Y direction) from one end of the main drain electrode 175m. The sensing electrode SE is an electrode corresponding to the node N4 to which the resistive element 320 and the sensing unit 500 are connected. As a result, the sensing voltage VCS is transferred to the resistance element 320 and the sensing unit 500 via the sensing electrode SE. According to an embodiment, the sub-drain electrode 175s and the sensing electrode SE are disposed in a space formed by at least a portion of the sub-channel layer 132s being recessed. The sub-drain electrode 175s and the sensing electrode SE pass through the barrier layer 136 and contact the side surface of the sub-channel layer 132s. The sub-drain electrode 175s and the sensing electrode SE are electrically connected to the sub-drift region DTRs1. However, without being limited thereto, the sub-channel layer 132s may not be recessed, and the sub-drain electrode 175s and the sensing electrode SE may be disposed on the upper surface of the sub-channel layer 132s.

[0075] The sub-drain electrode 175s and the sensing electrode SE cover at least a portion of the top surface of the protective layer 140, but are not limited to this. In addition, the sub-drain electrode 175s and the sensing electrode SE cover at least a part of the side surface of the protective layer 140. For example, the sub-drain electrode 175s and the sensing electrode SE cover the sides of the protective layer 140. The top surface of the sub-drain electrode 175 s and the top surface of the sensing electrode SE protrude from the top surface of the protective layer 140 . The sub-drain electrode 175s and the sensing electrode SE include a conductive material. The sub-drain electrode 175s and the sensing electrode SE include the same material. In addition, the sub-drain electrode 175s and the sensing electrode SE contain the same material as the main source electrode 173m and the main drain electrode 175m. The sub-drain electrode 175s and the sensing electrode SE are formed in the same process as the main source electrode 173m and the main drain electrode 175m. For example, the main drain electrode 175m and the sensing electrode SE may include a metal, a metal alloy, a conductive metal nitride, a metal suicide, a doped semiconductor material, a conductive metal oxide, or a conductive metal oxynitride. The main drain electrode 175m and the sensing electrode SE may be made of a single layer or multiple layers. The main drain electrode 175m and the sensing electrode SE make ohmic contact with the sub-channel layer 132s. The region in the sub-channel layer 132s that contacts the sensing electrode SE is doped at a relatively higher concentration than the other regions, but is not limited to this.

[0076] The resistive element 320 of the semiconductor device includes a channel pattern 132r located between the sensing electrode SE and the main source electrode 173m. The resistor element 320 also includes a barrier layer 136 located above the channel pattern 132r. The resistive element 320 is composed of the drift region resistance of the sub-drift region DTRs2 (RD in FIG. 10), the contact resistance at the contact interface CI1 between the channel pattern 132r and the sensing electrode SE (RC1 in FIG. 10), and the contact resistance at the contact interface CI2 between the channel pattern 132r and the main source electrode 173m (RC2 in FIG. 10). The channel pattern 132r is located between the sensing electrode SE and the main source electrode 173m, and is a part of the channel layer 132 located in the peripheral circuit area PA. The channel pattern 132r is a layer that forms a channel between the sensing electrode SE and the main source electrode 173m, and a 2DEG region 132r is disposed inside the channel pattern 132r. Specifically, the 2DEG region 134r is disposed at the interface between the channel pattern 132r and the barrier layer 136 in a region relatively close to the channel pattern 132r. The 2DEG region 134r is disposed within the sub-drift region DTRs2 of the channel pattern 132r. The 2DEG region 134r, like the above-described 2DEG regions (134m, 134s), is a region within the channel pattern 132r that exists in a two-dimensional paper (eg, plane)-like form in a three-dimensional space. The movement of electrons in the 2DEG region 134r is understood and / or predicted by the two-dimensional electron gas model.

[0077] According to an embodiment, the channel pattern 132r is integrally formed with the main channel layer 132m of the main transistor 100 and the sub-channel layer 132s of the sub-transistor 310 through the same process. The channel pattern 132r is disposed in the same layer as the main channel layer 132m and the sub-channel layer 132s. The lower surface of the channel pattern 132r is located at the same level as the lower surface of the main channel layer 132m and the lower surface of the sub-channel layer 132s, and the upper surface of the channel pattern 132r is located at the same level as the upper surface of the main channel layer 132m and the upper surface of the sub-channel layer 132s. That is, the bottom surface of the channel pattern 132r is located at the same distance from the top surface of the substrate 110 as the bottom surfaces of the main channel layer 132m and the sub-channel layer 132s. In addition, the top surface of the channel pattern 132r is located at the same distance from the top surface of the substrate 110 as the top surfaces of the main channel layer 132m and the sub-channel layer 132s. The thickness of the channel pattern 132r in the third direction (Z direction) is substantially the same as the thickness of the main channel layer 132m in the third direction (Z direction), but is not limited to this. Furthermore, the thickness of the channel pattern 132r in the third direction (Z direction) is substantially the same as the thickness of the sub-channel layer 132s in the third direction (Z direction), but is not limited thereto. In this case, the separation structure 160 separates the channel pattern 132r from the sub-channel layer 132s, and the channel pattern 132r from the main channel layer 132m.

[0078] The channel pattern 132r is disposed on one side of the sub-channel layer 132s. The channel pattern 132r is disposed between the sensing electrode SE and the main source electrode 173m. For example, the main source electrode 173m is further extended in the peripheral circuit area PA to contact one side of the channel pattern 132r. One end of the channel pattern 132r is electrically connected to the main source electrode 173m. The other end of the channel pattern 132r contacts the sensing electrode SE. For example, the channel pattern 132r extends in the second direction (Y direction) between the sensing electrode SE and the main source electrode 173m. However, the present invention is not limited thereto, and the channel pattern 132r may include a portion extending in a first direction (X direction) and a portion extending in a second direction (Y direction). Alternatively, the channel pattern 132r may include a plurality of patterns extending in the first direction (X direction). This will be described later with reference to FIGS.

[0079] According to one embodiment, the width of the channel pattern 132r is smaller than the width of the sub-channel layer 132s. For example, the width W4 of the channel pattern 132r along the first direction (X direction) is smaller than the width of the sub-channel layer 132s along the second direction (Y direction). A width W4 of the channel pattern 132r along the first direction (X direction) is smaller than a width W3 of the portion (132s_P2) of the sub-channel layer 132s along the second direction (Y direction). Also, the width W4 of the channel pattern 132r along the first direction (X direction) is smaller than the width W2 of the portion (132s_P1) of the sub-channel layer 132s along the second direction (Y direction). Also, the width W4 of the channel pattern 132r along the first direction (X direction) is smaller than the width W1 of the main channel layer 132m along the second direction (Y direction). The width W1 of the channel pattern 132r along the first direction (X direction) is selected so that the resistor 320 of the semiconductor device has a resistance value in an appropriate range.

[0080] Also, the width W4 of the channel pattern 132r in the first direction (X direction) is substantially the same as the width of the main source electrode 173m in the first direction (X direction). Also, the width of the sensing electrode SE in the first direction (X direction) is substantially the same as the width W4 of the channel pattern 132r in the first direction (X direction). However, without being limited thereto, for example, the width of the main source electrode 173m along the first direction (X direction) or the width of the sensing electrode SE along the first direction (X direction) may be smaller than the width of the channel pattern 132r along the first direction (X direction). As another example, the width of the main source electrode 173m along the first direction (X direction) or the width of the sensing electrode SE along the first direction (X direction) may be greater than the width of the channel pattern 132r along the first direction (X direction). In this case, the sensing electrode SE may overlap the separation structure 160 in the third direction (Z direction), but is not limited thereto.

[0081] According to one embodiment, the channel pattern 132r includes the same material as the main channel layer 132m and the sub-channel layer 132s. As an example, the channel pattern 132r may include one or more materials selected from III-V group materials, such as nitrides containing Al, Ga, In, B, or combinations thereof. The channel pattern 132r is disposed on the substrate 110, and the seed layer 121 and the buffer layer 120 are disposed between the substrate 110 and the channel pattern 132r. The substrate 110, the seed layer 121, and the buffer layer 120 are layers necessary for forming the channel pattern 132r, but may be omitted in some cases.

[0082] A barrier layer 136 is disposed over the channel pattern 132r. That is, the barrier layer 136 disposed on the main channel layer 132m further extends onto the channel pattern 132r. A barrier layer 136 is disposed directly above the channel pattern 132r. However, the present invention is not limited to this, and other predetermined layers may be disposed between the channel pattern 132r and the barrier layer 136. The region of the channel pattern 132r that overlaps with the barrier layer 136 becomes a drift region.

[0083] Continuing to refer to FIG. 7, the channel pattern 132r in the peripheral circuit area PA includes a sub-drift region DTRs2 between the sensing electrode SE and the main source electrode 173m. That is, the sub-drift region DTRs2 refers to a region of the channel pattern 132r from one side of the channel pattern 132r in contact with the main source electrode 173m to the sensing electrode SE. The sub-drift region DTRs2 refers to a region of the channel pattern 132r that overlaps with the barrier layer 136 between the sensing electrode SE and the main source electrode 173m. For example, the boundary where the main source electrode 173m and the channel pattern 132r intersect is one side edge of the sub-drift region DTRs2, and the boundary where the sensing electrode SE and the channel pattern 132r intersect is the other side edge of the sub-drift region DTRs2. In other words, the sub-drift region DTRs2 refers to a region where carriers move between one side of the channel pattern 132r in contact with the main source electrode 173m and the sensing electrode SE in the peripheral circuit region PA. The sub-drift region DTRs2 according to one embodiment extends in the second direction (Y direction), but is not limited thereto.

[0084] The sub-drift region DTRs2 has a resistance component. That is, the region of the channel pattern 132r from the main source electrode 173m to the sensing electrode SE has a predetermined resistance value. The sub-drift region DTRs2 functions as a part of the resistance of the resistive element (320 in FIG. 1). At this time, the drift region resistance (RD in FIG. 10) of the sub-drift region DTRs2 has a temperature coefficient of resistance (TCR) with a positive sign. For example, the temperature coefficient of resistance of the sub-drift region DTRs2 is about 5 (Ω / μm° C.) to about 15 (Ω / μm° C.). As a result, the drift region resistance (RD in FIG. 10) of the sub-drift region DTRs2 increases as the temperature increases. The sub-drift region DTRs2 extends in the second direction (Y direction). In this case, the extension length LT of the sub-drift region DTRs2 along the second direction (Y direction) is 1 μm to 10 μm. Preferably, the extension length LT of the sub-drift region DTRs2 along the second direction (Y direction) is 3 μm to 4 μm. In this range, the resistance value (RV in FIG. 11) of the resistor 320 of the semiconductor device according to the embodiment of the present invention can be substantially constant regardless of the temperature. This will be described in detail later with reference to FIGS.

[0085] Furthermore, according to an embodiment, the sensing electrode SE and the main source electrode 173m are in ohmic contact with the channel pattern 132r. At this time, a contact interface CI1 between the sensing electrode SE and the channel pattern 132r and a contact interface CI2 between the main source electrode 173m and the channel pattern 132r have a resistance component. Specifically, in the process in which carriers that have passed through the 2DEG region 134r pass through at least a portion of the channel pattern 132r, i.e., the top of the 2DEG region 134r, and are transmitted to the sensing electrode SE, the contact interface CI1 between the sensing electrode SE and the channel pattern 132r and the contact interface CI2 between the main source electrode 173m and the channel pattern 132r have a predetermined resistance value. Hereinafter, for convenience of explanation, the resistance of the contact interface CI1 between the sensing electrode SE and the channel pattern 132r will be referred to as the contact resistance (RC1 in FIG. 10), and the resistance of the contact interface CI2 between the main source electrode 173m and the channel pattern 132r will be referred to as the contact resistance (RC2 in FIG. 10). According to one embodiment, the contact resistances RC1 and RC2 have different values ​​depending on the temperature. For example, the contact resistances RC1 and RC2 decrease as the temperature increases. That is, the contact resistances RC1 and RC2 have a temperature coefficient of resistance TCR with a negative sign. This will be described in detail later with reference to FIGS.

[0086] In one embodiment, peripheral circuit elements 300 are separated from main transistor 100 by isolation structures 160 . That is, the isolation structure 160 is disposed between the peripheral circuit element 300 and the main transistor 100 . For example, as shown in FIG. 2, the main transistor 100 and the sub-transistor 310 are spaced apart in the second direction (Y direction) by the isolation structure 160, but the present invention is not limited thereto. In one embodiment, the isolation structures 160 penetrate the barrier layer 136 . For example, as shown in FIG. 8, the isolation structure 160 recesses at least a portion of the sub-channel layer 132s through the barrier layer 136. As a result, the sub-drift region DTRs1 of the peripheral circuit element 300 is electrically insulated from the main transistor 100. However, without being limited thereto, as another example, the isolation structure 160 may penetrate only the barrier layer 136 as shown in FIG. As another example, the isolation structures 160 may penetrate the barrier layer 136 and the sub-channel layer 132s. As another example, the peripheral circuit element 300 and the main transistor 100 may be separated by a trench that penetrates at least a portion of the sub-channel layer 132s and / or the main channel layer 132m.

[0087] The isolation structure 160 also provides isolation between the sub-transistor 310 and the resistor element 320 , and between the resistor element 320 and the main transistor 100 . The isolation structures 160 are disposed between the sub-transistor 310 and the resistive element 320 and between the resistive element 320 and the main transistor 100 . For example, as shown in FIG. 2, the isolation structure 160 is disposed between the sub-channel layer 132s of the sub-transistor 310 and the channel pattern 132r of the resistor 320, and between the main transistor 100 and the resistor 320. In other words, the separating structure 160 separates the main channel layer 132m, the sub-channel layer 132s, and the channel pattern 132r. At this time, as shown in FIG. 7, the isolation structure 160 overlaps with the main source electrode 173m in the third direction (Z direction). In addition, the isolation structure 160 overlaps the main gate electrode 155m and the main drain electrode 175m in the third direction (Z direction).

[0088] According to one embodiment, the isolation structure 160 is formed by forming a barrier layer 136 on the main channel layer 132m and the sub-channel layer 132s, and performing an ion implantation process in the barrier layer 136 located between the main transistor 100 and the peripheral circuit element 300. For example, in the region of the channel layer 132 overlapping the region of the barrier layer 136 where the ion implantation process has been performed in the third direction (Z direction), there is no or almost no two-dimensional electron gas formed. In this case, the ion implanted region of the barrier layer 136 and the corresponding region of the channel layer 132 correspond to the isolation structure 160 . Alternatively, the isolation structure 160 may be formed by performing an ion implantation process on the channel layer 132 . The ion-implanted regions of the channel layer 132 correspond to the isolation structures 160 . In the region of the channel layer 132 where the ion implantation process is performed, there is little or no two-dimensional electron gas formed. The material used in the ion implantation process is argon (Ar) ions.

[0089] However, without being limited thereto, the isolation structure 160 may be formed by forming a barrier layer 136 on the main channel layer 132m and the sub-channel layer 132s, forming a trench penetrating the barrier layer 136, and then filling the trench with an insulating material. The insulating material that makes up the isolation structure 160 includes the same material as the protective layer 140 . For example, the insulating material comprising the isolation structures 160 may include oxides such as SiO2 and Al2O3. As another example, the insulating material comprising the isolation structures 160 can include nitrides such as SiN and oxynitrides such as SiON. However, the present invention is not limited thereto, and the insulating material forming the isolation structure 160 may include a material different from that of the protective layer 140 . At that time, at least a portion of the main channel layer 132m and / or the sub-channel layer 132s is recessed together.

[0090] Hereinafter, a resistor element of a semiconductor device according to an embodiment of the present invention will be described with further reference to FIGS. FIG. 10 is a circuit diagram showing a resistor element of a semiconductor device according to an embodiment of the present invention, and FIG. 11 is a graph showing the resistance value of the resistor element of a semiconductor device according to an embodiment of the present invention as a function of temperature. 10, a resistive element 320 of a semiconductor device according to an embodiment of the present invention includes a resistive component having a predetermined resistance value.

[0091] In one embodiment, the resistive element 320 is composed of a drift region resistance RD of the sub-drift region DTRs2, a contact resistance RC1 at the contact interface CI1 between the channel pattern 132r and the sensing electrode SE, and a contact resistance RC2 at the contact interface CI2 between the channel pattern 132r and the main source electrode 173m. The node N4 and the node N2 are electrically connected via the contact resistance RC1 of the resistive element 320, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2. In this case, the sensing electrode SE corresponds to the node N4, and the portion of the main source electrode 173m located in the peripheral circuit area PA corresponds to the node N2. According to one embodiment, the contact resistance RC1, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2 are connected in series. That is, the contact resistance RC1, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2 are connected in series between the node N4 and the node N2. As a result, the resistance value RV of the resistive element 320 is defined as the sum of the contact resistance RC1, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2. This is due to the structural characteristics in which the sub-drift region DTRs2 formed by the channel pattern 132r and the barrier layer 136 is located between the contact electrode CT1 and the contact electrode CT2.

[0092] 11, the resistance value RV of the resistor 320 of the semiconductor device according to the embodiment of the present invention has a substantially constant value regardless of temperature. That is, the sum of the contact resistance RC1 connected in series between the node N4 and the node N2, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2 has a substantially constant value regardless of the temperature. For example, the resistance value RV of the resistive element 320 at a first temperature is substantially the same as the resistance value RV of the resistive element 320 at a second temperature different from the first temperature.

[0093] On the other hand, the contact resistance RC1, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2 each have a resistance value that varies depending on the temperature. Specifically, the resistance value RV2 of the contact resistance RC1 and the contact resistance RC2 depending on the temperature has the relationship shown in Equation 1 below. (Number 1) RV2=A1T+K1[Ω / μm] Formula 1 Here, RV2 denotes the resistance value (Ω) of the contact resistances RC1 and RC2, T denotes the temperature (°C), and A1 denotes the temperature coefficient of resistance (TCR) of the contact resistances RC1 and RC2. Furthermore, K1 is a constant.

[0094] In this case, the temperature coefficient of resistance (TCR) of the contact resistances RC1 and RC2 has a negative value. For example, the temperature coefficient of resistance TCR of the contact resistances RC1 and RC2 is about -20 (Ω / °C) to about -10 (Ω / °C). This allows the contact resistances RC1 and RC2 to decrease as the temperature increases.

[0095] Next, the unit resistance value (RV1_U) according to the temperature of the sub-drift region DTRs2 has the relationship of Equation 2 shown below. (Number 2) RV1_U=A2T+K2[Ω / μm] Formula 2 Here, (RV1_U) means the unit resistance (Ω) of the sub-drift region DTRs2 per unit length (um), T means the temperature (°C), and A2 means the temperature coefficient of resistance TCR of the sub-drift region DTRs2. Also, K2 is a constant.

[0096] The unit resistance value (RV1_U) of the sub-drift region DTRs2 means the resistance value per unit length of the drift region resistance RD of the sub-drift region DTRs2. In this case, the temperature coefficient of resistance of the sub-drift region DTRs2 has a positive value. For example, the temperature coefficient of resistance of the sub-drift region DTRs2 is about 5 (Ω / μm° C.) to about 15 (Ω / μm° C.). As a result, the drift region resistance RD of the sub-drift region DTRs2 increases as the temperature rises. The temperature coefficient of resistance of the sub-drift region DTRs2 according to one embodiment is smaller than the temperature coefficient of resistance TCR of the contact resistance RC1, but is not limited to this.

[0097] The drift region resistance RD of the sub-drift region DTRs2 can be calculated by multiplying the unit resistance value (RV1_U) of the sub-drift region DTRs2 by the length of the sub-drift region DTRs2. As an example, when the extension length LT of the sub-drift region DTRs2 along the second direction (Y direction) is 1 μm to 10 μm, the drift region resistance RD of the sub-drift region DTRs2 is 1 to 10 times the unit resistance value (RV1_U) of the sub-drift region DTRs2. In other words, the resistance of the sub-drift region DTRs2 can be expressed by the following Equation 3. (Number 3) RD=(LT)RV1_U=(LT)A2T+(LT)K2[Ω / μm] Formula 3 Here, RD denotes the resistance (Ω) of the sub-drift region DTRs2, and LT denotes the length μm of the sub-drift region DTRs2 along the second direction (Y direction).

[0098] That is, the amount of change in the drift region resistance RD of the sub-drift region DTRs2 with respect to the amount of change in temperature depends on the temperature resistance coefficient of the sub-drift region DTRs2 and the length LT of the sub-drift region DTRs2 along the second direction (Y direction). On the other hand, the amount of change in the contact resistances RC1 and RC2 with respect to the change in temperature depends almost entirely on the temperature resistance coefficients of the contact resistances RC1 and RC2. In one embodiment, even when the contact resistances RC1 and RC2 have negative temperature resistance coefficients and the sub-drift region DTRs2 has a positive temperature resistance coefficient, if the length LT of the sub-drift region DTRs2 along the second direction (Y direction) has a predetermined range, the resistance value RV of the resistive element 320 has a substantially constant value regardless of temperature. For example, when the length LT of the sub-drift region DTRs2 along the second direction (Y direction) is 1 μm to 10 μm, the temperature coefficient of resistance of the resistance value RV of the resistive element 320 is approximately 0 (Ω / ° C.). Preferably, the length LT of the sub-drift region DTRs2 along the second direction (Y direction) is 3 μm to 4 μm.

[0099] As a result, even if the contact resistance RC1 of the resistor 320 of the semiconductor device according to an embodiment of the present invention, the drift region resistance RD of the sub-drift region DTRs2, and the contact resistance RC2 each have different resistance values ​​depending on the temperature, the resistance value RV of the resistor 320 can have a substantially constant value regardless of the temperature. As a result, uniform device characteristics (for example, the magnitude of the sensing voltage VCS) can be exhibited regardless of the ambient temperature, thereby improving the reliability of the semiconductor device according to the embodiment of the present invention.

[0100] Hereinafter, resistor elements of semiconductor devices according to some embodiments of the present invention will be described with reference to FIGS. 12 to 19 are plan views showing peripheral circuit elements of semiconductor devices according to some embodiments of the present invention. 12 to 19 show various modifications of the semiconductor device according to the embodiment of the present invention shown in FIGS. The embodiment shown in FIGS. 12 to 19 corresponds to the same parts as the embodiment shown in FIGS. 1 to 11, so a description thereof will be omitted and the following description will focus on the differences. The same reference numerals are used for the same components as those in the previous embodiment.

[0101] Referring to FIG. 12, in some embodiments, the width of the sub-channel layer 132s of the sub-transistor 310 of the semiconductor device along the second direction (Y direction) can be varied. For example, the width W2 along the second direction (Y direction) of the portion (132s_P1) of the sub-channel layer 132s located between the sub-gate electrode 155s and the sub-drain electrode 175s is substantially the same as the third width W3 along the second direction (Y direction) of the portion (132s_P2) of the sub-channel layer 132s located between the sub-gate electrode 155s and the sensing electrode SE. In this case, the width W2 of the sub-channel layer 132s portion (132s_P1) along the second direction (Y direction) is substantially the same as the width W4 of the channel pattern 132r along the first direction (X direction), but is not limited to this.

[0102] 13 and 14, in some embodiments, the location of the sensing electrodes SE of the semiconductor device can be varied. For example, as shown in FIG. 13, the sensing electrode SE is disposed adjacent to the main source electrode 173m. At this time, one side surface of the sensing electrode SE along the first direction (X direction) contacts the isolation structure 160. As another example, as shown in FIG. 14, the sensing electrode SE may be disposed adjacent to the sub-gate electrode 155s. At this time, one side surface of the sensing electrode SE along the second direction (Y direction) contacts the isolation structure 160. This allows the shape of the channel pattern 132r and / or the shape of the portion (132s_P2) of the sub-channel layer 132s to be changed in various ways. For example, as shown in FIG. 13, a portion (132s_P2) of the sub-channel layer 132s may further include a portion that contacts the sensing electrode SE and extends in the second direction (Y direction), or as shown in FIG. 14, the channel pattern 132r may further include a portion that contacts the sensing electrode SE and extends in the first direction (X direction).

[0103] Referring to FIG. 15, the channel pattern 132r includes a first portion extending in a first direction (X direction) and a plurality of portions extending in a second direction (Y direction). For example, the channel pattern 132r has a portion extending in the second direction (Y direction) from one side of the sensing electrode SE and a portion extending in the first direction (X direction) alternately positioned. Such a shape may be, for example, to ensure a desired length of the channel pattern 132r within a given area, where the length of the channel pattern 132r is the sum of the lengths of the various portions of the channel pattern 132r. However, this is merely an example, and the extension direction of the channel pattern 132r is not limited to this. For example, the channel pattern 132r may extend in only one direction from one side of the sensing electrode SE or may include multiple bent portions. Alternatively, the channel pattern 132r may include a portion extending in a diagonal direction intersecting the first direction (X direction) and the second direction (Y direction).

[0104] According to one embodiment, the channel pattern 132r is elongated to have a predetermined length. Here, the extension length of the channel pattern 132r means the total length over which the channel pattern 132r is extended. In this case, the width of the channel pattern 132r is smaller than the width of the sub-channel layer 132s along the second direction (Y direction). Here, the width of the channel pattern 132r may refer to the width along a direction perpendicular to the extension direction of the channel pattern 132r. The width of the main channel layer 132m means the width of the main channel layer 132m along the second direction (Y direction). The channel pattern 132r in this area serves as a resistor element 320 according to one embodiment.

[0105] Referring to FIG. 16, in some embodiments, the channel pattern 132r includes a portion whose width along the first direction (X direction) varies. For example, the width of the channel pattern 132r in the first direction (X direction) includes a portion that increases as it moves away from the sensing electrode SE. In addition, the width of the channel pattern 132r in the first direction (X direction) may further include a portion that decreases as it moves away from the sensing electrode SE.

[0106] Referring to FIG. 17, in some embodiments, the width of the sensing electrode SE of the semiconductor device is different from the width W4 of the channel pattern 132r along the first direction (X direction). For example, the width of the sensing electrode SE along the first direction (X direction) is smaller than the width W4 of the channel pattern 132r along the first direction (X direction).

[0107] 18 and 19, in some embodiments, the sub-channel layer 132s of the semiconductor device further includes a third portion (132s_P3) located between the portion (132s_P2) and the sub-gate electrode 155s. In this case, the width of the third portion (132s_P3) along the second direction (Y direction) is substantially the same as the width of the portion (132s_P1) along the second direction (Y direction), and the width of the third portion (132s_P3) along the second direction (Y direction) is larger than the width of the portion (132s_P2) along the second direction (Y direction). In some embodiments, one side surface of the third portion (132s_P3) along the first direction (X direction) contacts the isolation structure 160. As a result, the isolation structure 160 is spaced apart from the sub-gate electrode 155s in the first direction (X direction).

[0108] As shown in FIG. 19, in some embodiments, the width W4 of the channel pattern 132r of the semiconductor device along the first direction (X direction) is greater than the width of the main source electrode 173m along the first direction (X direction). Also, the width W4 of the channel pattern 132r in the first direction (X direction) is greater than the width of the sensing electrode SE in the first direction (X direction). At this time, one side of the main source electrode 173m along the second direction (Y direction) and a part of one side of the main source electrode 173m along the first direction (X direction) contact the channel pattern 132r. As a result, the area of ​​the contact interface between the main source electrode 173m and the channel pattern 132r is relatively increased.

[0109] Resistance elements of semiconductor devices according to some embodiments of the present invention will be described below with reference to FIGS. 20 is a circuit diagram showing a resistive element of a semiconductor element according to some embodiments of the present invention, FIG. 21 is a plan view showing a peripheral circuit element including the resistive element of FIG. 20, FIG. 22 is a cross-sectional view taken along line E-E' of FIG. 20, FIG. 23 is a plan view showing a peripheral circuit element including the resistive element of FIG. 20, and FIG. 24 is a cross-sectional view taken along line F-F' of FIG. 23. The resistance element (320_1) of the semiconductor device according to the embodiment of FIGS. 20 to 24 corresponds to the resistance element 320 of the embodiment of FIG. 20 to 24, a resistive element (320_1) of a semiconductor device according to some embodiments of the present invention includes resistive elements (321, 322).

[0110] First, referring to FIG. 20, the resistance elements (321, 322) are connected in series. That is, the resistive element 321 and the resistive element 322 are connected in sequence between the node N4 and the node N2. Therefore, the resistance value of the resistive element (320_1) of the semiconductor device according to some embodiments of the present invention is the sum of the resistance value of the resistive element 321 and the resistance value of the resistive element 320. Here, the resistance of the resistive element 321 includes the contact resistance RC1a of the resistive element 321, the drift region resistance RDa, and the contact resistance RC2a of the resistive element 321. The resistance of the resistive element 320 includes a contact resistance RC1b of the resistive element 320, a drift region resistance RDb, and a contact resistance RC2b of the resistive element 320. Resistive element 321 and resistive element 320 according to some embodiments have a constant resistance value regardless of temperature. In this case, the drift region resistances RDa and RDb have a temperature coefficient of resistance (TCR) with a positive sign. As a result, the drift region resistances RDa and RDb increase as the temperature rises.

[0111] The contact resistance RC1a of the resistive element 321, the contact resistance RC2a of the resistive element 321, the contact resistance RC1b of the resistive element 320, and the contact resistance RC2b of the resistive element 320 have a negative temperature coefficient of resistance (TCR). As a result, the contact resistance RC1a of the resistor element 321, the contact resistance RC2a of the resistor element 321, the contact resistance RC1b of the resistor element 320, and the contact resistance RC2b of the resistor element 320 decrease as the temperature increases. As the temperature increases, the increase in the drift region resistance RDa of the resistive element 321 can be offset by the decrease in the contact resistances (RC1a, RC2a), and therefore the overall resistance of the resistive element 321 can be maintained substantially constant. Similarly, an increase in the drift region resistance RDb of the resistive element 322 can be offset by a decrease in the contact resistances (RC1b, RC2b), so that the overall resistance of the resistive element 322 can remain substantially constant. As a result, each of the resistive elements 321 and 322 has a constant resistance value regardless of temperature, so that even when the resistive elements (321, 322) are connected, the resistive element (320_1) of the semiconductor element according to some embodiments of the present invention has a substantially constant resistance value regardless of temperature. Therefore, the resistive elements (321, 322) can be easily connected in various ways to design elements that have a substantially constant resistance regardless of temperature.

[0112] 21 and 22, the resistive element 320_1 further includes a contact electrode CT located on the channel pattern 132r between the main source electrode 173m and the sensing electrode SE. The channel pattern 132r according to some embodiments includes a channel pattern 132r1 disposed between the main source electrode 173m and the sensing electrode SE, and a channel pattern 132r2 disposed between the contact electrode CT and the sensing electrode SE. The channel patterns (132r1, 132r2) are arranged in one direction. The arrangement direction of the channel patterns (132r1, 132r2) is substantially the same as the extension direction of the channel patterns (132r1, 132r2). For example, as shown in FIG. 21, each of the channel patterns (132r1, 132r2) is extended in the second direction (Y direction), and the channel patterns (132r1, 132r2) are arranged in the second direction (Y direction), but this is not limited to this. In some embodiments, the channel pattern 132r1 and the channel pattern 132r2 may have the same arrangement, shape, structure, material, etc. as the channel pattern 132r of FIGS.

[0113] According to some embodiments, the channel pattern 132r1 has a drift region DTR1, and the channel pattern 132r2 has a drift region DTR2. The resistance of the drift region DTR1 of the channel pattern 132r1 corresponds to the resistance RDa of the drift region DTR1 of the resistive element 321 in FIG. The resistance of the drift region DTR2 of the channel pattern 132r2 corresponds to the resistance RDb of the drift region DTR2 of the resistive element 322 in FIG. The contact resistance RC1a of the resistor element 321 corresponds to the resistance of the contact interface CI2 between the main source electrode 173m and the channel pattern 132r. The contact resistance RC2b of the resistive element 322 corresponds to the resistance of the contact interface CI1 between the sensing electrode SE and the channel pattern 132r. In some embodiments, the lengths of the channel patterns 132r1 and 132r2 extended in the second direction (Y direction) are substantially the same. For example, the length between one side of the channel pattern 132r1 in contact with the main source electrode 173m and the other side of the channel pattern 132r1 in contact with the contact electrode CT is substantially the same as the length between one side of the channel pattern 132r2 in contact with the contact electrode CT and the other side of the channel pattern 132r2 in contact with the sensing electrode SE.

[0114] A contact electrode CT according to some embodiments is disposed on the channel pattern 132r. The contact electrode CT is disposed between the main source electrode 173m and the sensing electrode SE. The contact electrode CT is in contact with the channel pattern 132r and is electrically connected to the channel pattern 132r. The contact electrode CT is disposed in a space where at least a portion of the channel pattern 132r is recessed. For example, as shown in FIG. 22, the contact electrode CT may completely fill the space where at least a portion of the channel pattern 132r is recessed, but is not limited thereto. The contact electrode CT can penetrate the barrier layer 136 . The contact electrode CT according to some embodiments is located in the same layer as the main source electrode 173m and the sensing electrode SE, and can be formed simultaneously in the same process as the main source electrode 173m and the sensing electrode SE. The contact electrode CT comprises the same material as the main source electrode 173m and the sensing electrode SE.

[0115] The contact electrode CT is in ohmic contact with the channel pattern 132r. At this time, a contact interface CI3 between the contact electrode CT and the channel pattern 132r1 and a contact interface CI4 between the contact electrode CT and the channel pattern 132r2 have a resistance component. In some embodiments, the resistance of the contact interface CI3 between the contact electrode CT and the channel pattern 132r1 corresponds to the contact resistance RC2a of the resistive element 321, and the resistance of the contact interface CI4 between the contact electrode CT and the channel pattern 132r2 corresponds to the contact resistance RC2b of the resistive element 322.

[0116] The contact resistance RC2a of the resistive element 321 and the contact resistance RC2b of the resistive element 322 have different values ​​depending on the temperature. For example, the contact resistance RC2a of the resistor element 321 and the contact resistance RC2b of the resistor element 322 decrease as the temperature increases. That is, the contact resistance RC2a of the resistive element 321 and the contact resistance RC2b of the resistive element 322 have a temperature coefficient of resistance TCR with a negative sign. In some embodiments, the resistance value of each of the resistive elements (321, 322) has a substantially constant value regardless of temperature. That is, the temperature coefficient of resistance TCR of each of the resistance elements (321, 322) is approximately zero. However, without being limited thereto, the resistance value of each of the resistive elements 321 and 322 increases or decreases as the temperature increases, and the total resistance value of the resistive elements 321 and 322 has a substantially constant value regardless of the temperature. As another example, the resistance value of each of the resistive elements 321 and 322 may increase or decrease as the temperature increases.

[0117] 23 and 24, the contact electrodes CT of the resistive element 320 according to some embodiments of the present invention include a contact electrode CT1 and a contact electrode CT2. In this case, the contact electrode CT1 further includes a connection portion CP located between the contact electrode CT2. In some embodiments, the contact electrode CT1 and the contact electrode CT2 may be integrally formed. That is, the contact electrode CT1 and the contact electrode CT2 can be integrally formed in the same process. At this time, the isolation structure 160 and the protective layer 140 are disposed between the contact electrode CT1 and the contact electrode CT2, and the connection portion CP is disposed on the protective layer 140. The connection portion CP electrically connects the contact electrode CT1 and the contact electrode CT2. The connection portion CP is disposed on the protective layer 140 . The connection portion CP covers the upper surface of the protective layer 140 . The connection portion CP overlaps the protective layer 140 and the isolation structure 160 in the third direction (Z direction).

[0118] Resistance elements of semiconductor devices according to some embodiments of the present invention will be described below with reference to FIGS. 25 is a circuit diagram showing a resistor element of a semiconductor element according to some embodiments of the present invention, FIG. 26 is a plan view showing peripheral circuit elements including the resistor element of FIG. 25, FIG. 27 is a plan view showing an enlarged version of the resistor element of FIG. 26, FIG. 28 is a cross-sectional view taken along line G-G' of FIG. 27, FIG. 29 is a cross-sectional view corresponding to line G-G' of FIG. 27 of the resistor element of a semiconductor element according to some embodiments of the present invention, FIG. 30 is a plan view showing a resistor element of a semiconductor element according to some embodiments of the present invention, FIG. 31 is a circuit diagram showing a resistor element of a semiconductor element according to some embodiments of the present invention, FIG. 32 is a plan view showing an enlarged version of the resistor element of FIG. 31, FIG. 33 is a circuit diagram showing a resistor element of a semiconductor element according to some embodiments of the present invention, and FIG. 34 is a plan view showing an enlarged version of the resistor element of FIG. 32.

[0119] Referring to FIGS. 25 to 34, a semiconductor device according to some embodiments of the present invention may include a plurality of resistor elements 320_2. The plurality of resistance elements (321 to 324) are arranged in one direction. The arrangement direction of the plurality of resistive elements (321 to 324) is different from the extension direction of the channel patterns (131a to 131d) of the plurality of resistive elements (321 to 324). That is, the channel pattern 132r1 of the resistive element 321, the channel pattern 132r2 of the resistive element 320, the channel pattern 132r3 of the resistive element 323, and the channel pattern 132r4 of the resistive element 324 extend in the first direction (X direction), and the resistive elements 321 to 324 are arranged along the second direction (Y direction).

[0120] Each of the resistance elements 321 to 324 according to the embodiment of FIGS. 25 to 34 corresponds to the resistance element 320 according to the embodiment of FIGS. That is, the channel pattern 132r1 of the resistive element 321, the channel pattern 132r2 of the resistive element 320, the channel pattern 132r3 of the resistive element 323, and the channel pattern 132r4 of the resistive element 324 have the same arrangement, shape, structure, material, etc. as the channel pattern 132r of Figures 1 to 11, and the contact electrodes (CT1a, CT2a) of the resistive element 321, the contact electrodes (CT1b, CT2b) of the resistive element 320, the contact electrodes (CT1c, CT2c) of the resistive element 323, and the contact electrodes (CT1d, CT2d) of the resistive element 324 have the same arrangement, shape, structure, material, etc. as the contact electrodes (CT1, CT2) of Figures 1 to 11.

[0121] In some embodiments, the lengths of the channel patterns (131a to 131d) of the plurality of resistor elements (321 to 324) extending in the first direction (X direction) are substantially the same. As an example, the length between the contact interface of the channel pattern 132r1 in contact with the contact electrode CT1a of the resistive element 321 and the contact interface of the channel pattern 132r1 in contact with the contact electrode CT2a of the resistive element 321 is substantially the same as the length between the contact interface of the channel pattern 132r2 in contact with the contact electrode CT1b of the resistive element 320 and the contact interface of the channel pattern 132r2 in contact with the contact electrode CT2b of the resistive element 320. That is, the length along the first direction (X direction) of the channel pattern 132r1 between the contact electrodes CT1a and CT2a of the resistive element 321 is substantially the same as the length along the first direction (X direction) of the channel pattern 132r2 between the contact electrodes CT1b and CT2b of the resistive element 320. The same applies to the resistor element 323 and the resistor element 324. However, the present invention is not limited to this, and the lengths of the channel patterns 131a to 131d of the plurality of resistor elements 321 to 324 extending in the second direction (Y direction) may be different.

[0122] In some embodiments, the width of each of the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d) is greater than the width of the channel patterns (131a to 131d). For example, as shown in Figures 27 and 28, the maximum width of each of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) along the second direction (Y direction) is greater than the width of the channel patterns (131a to 131d) along the second direction (Y direction). Specifically, the width along the second direction (Y direction) of the portions of the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) located within the space formed by the recess of at least a portion of the channel patterns (131a to 131d) is substantially the same as the width along the second direction (Y direction) of the channel patterns (131a to 131d), and the width along the second direction (Y direction) of the portions of the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) protruding from the top surface of the channel patterns (131a to 131d) is greater than the width along the second direction (Y direction) of the channel patterns (131a to 131d). As a result, at least a portion of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d) overlaps with the isolation structure 160 in the third direction (Z direction).

[0123] However, without being limited to this, as another example, as shown in FIG. 29, the maximum width of each of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) along the second direction (Y direction) may be smaller than or substantially the same as the width of the channel patterns (131a to 131d) along the second direction (Y direction). In this case, a barrier layer 136 is further disposed between the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d) adjacent to each other in the second direction (Y direction). That is, an isolation structure 160 is arranged between a plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) adjacent in the second direction (Y direction), and a barrier layer 136 is arranged between the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) and the isolation structure 160.

[0124] As an example, a barrier layer 136 is further disposed between the contact electrode CT1a of the resistor element 321 and the isolation structure 160, and between the contact electrode CT1b of the resistor element 320 and the isolation structure 160. As a result, the isolation structure 160 is disposed to be spaced apart from the contact electrode CT1a of the resistor element 321 and the contact electrode CT1b of the resistor element 320 in the second direction (Y direction). Furthermore, the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) do not overlap with the isolation structure 160 in the third direction (Z direction), and at least a portion of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) overlap with the barrier layer 136 in the third direction (Y direction), but this is not limited to this.

[0125] In some embodiments, the multiple resistive elements (321-324) are separated by an isolation structure 160. For example, the separation structure 160 is arranged alongside the channel pattern 132r, and the plurality of channel patterns (131a to 131d) are separated by the separation structure 160. In some non-limiting embodiments, the isolation structure 160 recesses at least a portion of the channel pattern 132r. For example, the isolation structures 160 completely penetrate the channel pattern 132r and contact the protective layer 140. As another example, the isolation structures 160 may not penetrate the channel pattern 132r. That is, the lower surface of the isolation structure 160 may be located at substantially the same level as the lower surface of the barrier layer 136 . The isolation structure 160 may be formed by forming a barrier layer 136 on the main channel layer 132m and the channel pattern 132r, and performing an ion implantation process in the barrier layer 136 located between the plurality of resistor elements 321 to 324.

[0126] In some embodiments, the isolation structure 160 is formed by forming a barrier layer 136 on the main channel layer 132m and the channel pattern 132r, and performing an ion implantation process in the barrier layer 136 located between the semiconductor unit 100 and the resistor element 320. However, without being limited thereto, the isolation structure 160 may be formed by forming a barrier layer 136 on the main channel layer 132m and the channel pattern 132r, forming a trench penetrating the barrier layer 136, and then filling the trench with an insulating material. The insulating material that makes up the isolation structure 160 includes the same material as the protective layer 140 . For example, the insulating material that makes up the isolation structure 160 includes oxides such as SiO2 and Al2O3. As another example, the insulating material comprising the isolation structures 160 can include nitrides such as SiN and oxynitrides such as SiON. However, the insulating material forming the isolation structure 160 may include a material different from that of the protective layer 140 . At this time, at least a portion of the main channel layer 132m and / or the channel pattern 132r may be recessed together.

[0127] In some embodiments, each of the plurality of resistive elements (321 to 324) has a resistance component. For example, the resistance of the resistive element 321 includes a contact resistance RC1a of the resistive element 321, a drift region resistance RDa, and a contact resistance RC2a of the resistive element 321, and the resistance of the resistive element 320 includes a contact resistance RC1b of the resistive element 320, a drift region resistance RDb, and a contact resistance RC2b of the resistive element 320. In addition, the resistance of the resistive element 323 includes a first contact resistance RC1c of the resistive element 323, a third drift region resistance RDc, and a second contact resistance RC2c of the resistive element 323, and the resistance of the resistive element 324 includes a first contact resistance RC1d of the resistive element 324, a fourth drift region resistance RDd, and a second contact resistance RC2d of the resistive element 324. At this time, the plurality of resistance elements (321 to 324) are electrically connected to one another.

[0128] For example, referring to FIGS. 25 to 29, a plurality of resistance elements (321 to 324) are connected in series. Therefore, the resistance value of the resistor element (320_2) of the semiconductor device according to some embodiments of the present invention is the sum of the resistance values ​​of the resistor elements 321 to 324. As an example, the contact electrode CT1a of the resistive element 321 is configured as the main source electrode 173m as node N4, the contact electrode CT2a of the resistive element 321 and the contact electrode CT2b of the resistive element 320 are electrically connected, the contact electrode CT1b of the resistive element 320 and the contact electrode CT1c of the resistive element 323 are electrically connected, the contact electrode CT2c of the resistive element 323 and the contact electrode CT2d of the resistive element 324 are electrically connected, and the contact electrode CT1d of the resistive element 324 is configured as the sensing electrode SE as node N2, but is not limited to this. In some embodiments, the contact electrode CT1a of the resistor element 321 corresponds to the main source electrode 173m, but the present invention is not limited to this. For example, the contact electrode CT1a of the resistor element 321 may be electrically connected to the main source electrode 173m via another electrode.

[0129] In some embodiments, the contact electrode CT2a of the resistive element 321 and the contact electrode CT2b of the resistive element 320 are integrally formed. That is, the contact electrode CT2a of the resistor element 321 and the contact electrode CT2b of the resistor element 320 can be integrally formed in the same process. At this time, the first connection portion CP1 connecting the contact electrode CT2a of the resistor element 321 and the contact electrode CT2b of the resistor element 320 overlaps with the isolation structure 160 and the protective layer 140 in the third direction (Y direction). The first connection portion CP1 covers the upper surface of the protective layer 140. This also applies to the relationship between the contact electrode CT1b of the resistive element 320 and the contact electrode CT1c of the resistive element 323, and between the contact electrode CT2c of the resistive element 323 and the contact electrode CT2d of the resistive element 324. That is, the contact electrode CT1b of the resistor element 320 and the contact electrode CT1c of the resistor element 323 are integrally formed. Furthermore, the contact electrode CT2c of the resistive element 323 and the contact electrode CT2d of the resistive element 324 are integrally formed. In this case, the second connection portion CP2 connecting the contact electrode CT1b of the resistive element 320 to the contact electrode CT1c of the resistive element 323, and the third connection portion CP3 connecting the contact electrode CT2c of the resistive element 323 to the contact electrode CT2d of the resistive element 324 overlap with the isolation structure 160 and the protective layer 140 in the third direction (Y direction).

[0130] Hereinafter, a plurality of contact electrodes formed integrally will be referred to as a contact group. That is, in some embodiments, the contact electrode CT2a of the resistive element 321, the contact electrode CT2b of the resistive element 320, and the first connection portion CP1 are referred to as the first contact group, the contact electrode CT1b of the resistive element 320, the contact electrode CT1c of the resistive element 323, and the second connection portion CP2 are referred to as the second contact group, and the contact electrode CT2c of the resistive element 323, the contact electrode CT2d of the resistive element 324, and the third connection portion CP3 are referred to as the third contact group. In some embodiments, the contact groups are arranged alternately on one side and the other side of the channel pattern 132r in a plane. For example, on a plane consisting of a first direction (X direction) and a second direction (Y direction), the first contact group is arranged on one side of channel pattern 132r1 and one side of channel pattern 132r2, and the second contact group is arranged on the other side of channel pattern 132r2 and the other side of channel pattern 132r3. In addition, the third contact group is disposed on one side of the channel pattern 132r3 and one side of the channel pattern 132r4, but is not limited thereto. As a result, the first to fourth resistance elements (321 to 324) are connected in series.

[0131] In Figures 27 to 29, at least some of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) are shown as being integrally formed via connecting portions (CP1 to CP3), but this is not limited to this. For example, it is also possible to first form the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d), and then form the connection portion separately. As another example, a plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) can be formed, an insulating layer can be formed to cover the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d), and then an electrode can be formed that penetrates the insulating layer. In this case, at least some of the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) are electrically connected via electrodes that penetrate the insulating layer and are electrically connected to the multiple contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d).

[0132] In some embodiments, each of the resistive elements 321 to 324 has a constant resistance value regardless of temperature. As a result, each of the resistance elements 321 to 324 has a constant resistance value regardless of temperature, so that even when multiple resistance elements (321 to 324) are connected in series or in parallel, the resistance element (320_2) of the semiconductor element according to some embodiments can have a constant resistance value regardless of temperature. Therefore, it is possible to easily design elements having a constant resistance value regardless of temperature by connecting a plurality of resistance elements (321 to 324) in various ways without having to consider changes in resistance value depending on temperature. However, without being limited to this, at least some of the plurality of resistance elements (321 to 324) may have a positive temperature coefficient of resistance TCR, and the other may have a negative temperature coefficient of resistance TCR. However, even in this case, the total resistance of the plurality of resistance elements (321 to 324) can have a substantially constant resistance value regardless of the temperature.

[0133] For example, as shown in FIG. 30, the resistive element 321 has a negative temperature coefficient of resistance TCR, and the resistive element 320 has a positive temperature coefficient of resistance TCR. At this time, the resistance elements 323 and 324 have a substantially constant resistance value regardless of the temperature. Specifically, the extension length of the channel pattern 132r1 of the resistive element 321 along the first direction (X direction) is shorter than the extension length of the channel pattern 132r3 of the resistive element 323 along the first direction (X direction). As a result, the resistance of the resistor element 321 is less affected by the resistance component due to the drift region of the channel pattern 132r1, and the resistance of the resistor element 321 has a negative temperature coefficient of resistance TCR. The extension length of the channel pattern 132r2 of the resistor element 320 along the first direction (X direction) is longer than the extension length of the channel pattern 132r3 of the resistor element 323 along the first direction (X direction). As a result, the resistance of the resistor element 323 is influenced more by the resistance component due to the drift region of the channel pattern 132r3, and the resistance of the resistor element 323 has a positive temperature coefficient of resistance TCR. However, even in this case, the sum of the resistance of the resistive element 321 and the resistance of the resistive element 320 has a substantially constant value regardless of the temperature. As another example, the resistive element 324 according to some embodiments may further include an intermediate contact electrode between the contact electrode CT1d and the contact electrode CT2d.

[0134] As another example, as shown in FIGS. 31 and 32, a plurality of resistance elements (321 to 324) can be connected in parallel. The contact electrode CT1a of the resistive element 321, the contact electrode CT1b of the resistive element 320, the contact electrode CT1c of the resistive element 323, and the contact electrode CT1d of the resistive element 324 are electrically connected to the main source electrode 173m as a node N4, and the contact electrode CT2a of the resistive element 321, the contact electrode CT2b of the resistive element 320, the contact electrode CT2c of the resistive element 323, and the contact electrode CT2d of the resistive element 324 are electrically connected to the sensing electrode SE as a node N2. In this case, the contact electrode CT1a of the resistive element 321 is configured by the main source electrode 173m, and the contact electrode CT2d of the resistive element 324 is configured by the sensing electrode SE, but is not limited to this.

[0135] In some embodiments, the contact electrode CT1a of the resistive element 321, the contact electrode CT1b of the resistive element 320, the contact electrode CT1c of the resistive element 323, and the contact electrode CT1d of the resistive element 324 are integrally formed. That is, the contact electrode CT1a of the resistor element 321, the contact electrode CT1b of the resistor element 320, the contact electrode CT1c of the resistor element 323, and the contact electrode CT1d of the resistor element 324 can be integrally formed in the same process. At this time, the contact electrode CT1a of the resistive element 321 and the contact electrode CT1b of the resistive element 320, the contact electrode CT1b of the resistive element 320 and the contact electrode CT1c of the resistive element 323, and the contact electrode CT1c of the resistive element 323 and the contact electrode CT1d of the resistive element 324 are connected by connection parts. The connection portion overlaps the isolation structure 160 and the protective layer 140 in the third direction (Y direction). The connection covers the top surface of the protective layer 140 .

[0136] Furthermore, the contact electrode CT2a of the resistive element 321, the contact electrode CT2b of the resistive element 320, the contact electrode CT2c of the resistive element 323, and the contact electrode CT2d of the resistive element 324 are integrally formed. That is, the contact electrode CT2a of the resistor element 321, the contact electrode CT2b of the resistor element 320, the contact electrode CT2c of the resistor element 323, and the contact electrode CT2d of the resistor element 324 can be integrally formed in the same process. At this time, the contact electrode CT2a of the resistive element 321 and the contact electrode CT2b of the resistive element 320, the contact electrode CT2b of the resistive element 320 and the contact electrode CT2c of the resistive element 323, and the contact electrode CT2c of the resistive element 323 and the contact electrode CT2d of the resistive element 324 are connected by connection parts. The connection portion overlaps the isolation structure 160 and the protective layer 140 in the third direction (Y direction). The connection covers the top surface of the protective layer 140 .

[0137] In FIG. 32, a plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d) are shown as being formed integrally with the connection portion, but this is not limitative. For example, it is also possible to first form the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, and CT2d), and then form the connection portion separately. As another example, a plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d) can be formed, an insulating layer can be formed to cover the plurality of contact electrodes (CT1a, CT1b, CT1c, CT1d, CT2a, CT2b, CT2c, CT2d), and then an electrode can be formed that penetrates the insulating layer.

[0138] In some embodiments, the resistive elements 321 to 324 have a constant resistance value regardless of temperature. This allows the resistive element (320_2) of the semiconductor device according to some embodiments to have a substantially constant resistance value regardless of temperature. Therefore, by connecting a plurality of resistance elements (321 to 324) in various ways, it is possible to easily design elements that have a constant resistance value regardless of temperature. In some embodiments, the multiple resistance elements (321 to 324) are connected in series as shown in FIG. 25, or in parallel as shown in FIG. However, this is not limiting and various combinations and modifications are possible. For example, at least some of the multiple resistance elements (321 to 324) may be connected in series, and the remaining some may be connected in parallel. For example, as shown in FIGS. 33 and 34, the resistive element 321 and the resistive element 320 may be connected in parallel, and the resistive element 323 and the resistive element 324 may be connected in series with the resistive element 321.

[0139] As an example, the contact electrode CT2a of the resistive element 321 and the contact electrode CT2b of the resistive element 320 are electrically connected to the main source electrode 173m as node N4, the contact electrode CT1a of the resistive element 321 and the contact electrode CT1b of the resistive element 320 are electrically connected to the contact electrode CT1c of the resistive element 323, the contact electrode CT2c of the resistive element 323 and the contact electrode CT2d of the resistive element 324 are electrically connected, and the contact electrode CT1d of the resistive element 324 is electrically connected to the sensing electrode SE as node N2. In some embodiments, the contact electrode CT2a of the resistive element 321 is configured with the main source electrode 173m, and the contact electrode CT1d of the resistive element 324 is configured with the sensing electrode SE, but is not limited to this.

[0140] Semiconductor devices according to some embodiments of the present invention will now be described with reference to FIGS. Referring first to FIG. 35, a semiconductor device according to some embodiments of the present invention includes a main transistor 100 and a resistor element 320, but does not include a sub-transistor 310. A power supply voltage VD is supplied to a drain electrode D of the main transistor 100. A source electrode S of the main transistor 100 is electrically connected to the resistance element 320 via a node N6. In addition, the source electrode S of the main transistor 100 is electrically connected to the sensing unit 500 through a node N6. The resistive element 320 is electrically connected to the source electrode S of the main transistor 100 via a node N6. That is, one end of the resistance element 320 is electrically connected to the main source electrode (175s in FIG. 36) of the main transistor 100 via the node N6. Also, one end of the resistive element 320 is electrically connected to the sensing unit 500 via a node N6. The other end of the resistive element 320 is connected to a second power supply having a power supply voltage VS. As a result, the power supply voltage VS is supplied to the other end of the resistance element 320. The power supply voltage VS is, for example, a ground voltage.

[0141] Thus, when the main transistor 100 is turned on, current flows from the drain electrode D of the main transistor 100 to the source electrode S, through the node N6, and through the resistive element 320. At this time, a voltage drop occurs across the resistance element 320 in proportion to the magnitude of the current flowing through the main transistor 100 . That is, the sense voltage VCS at the node N6 is determined in proportion to the magnitude of the current flowing through the main transistor 100. Therefore, the sensing unit 500 can calculate the magnitude of the current flowing through the main transistor 100 based on the magnitude of the sensed sense voltage VCS. That is, the sensing unit 500 can detect whether an excessive current flows through the main transistor 100 when a sensing voltage VCS in a range greater than the previously stored range of sensing voltage VCS is detected.

[0142] Referring to FIG. 36, the main drain electrode 175m of a semiconductor device according to some embodiments of the present invention corresponds to the drain electrode D of the main transistor 100 of FIG. 35, the main gate electrode 155m corresponds to the gate electrode G of the main transistor 100 of FIG. 35, and the main source electrode 173m corresponds to the source electrode S of the main transistor 100 of FIG. 35. 35. The sensing electrode SE is a point corresponding to the node N6 in FIG. In the embodiment of FIGS. 35 and 36, the isolation structure 160 is not disposed between the main element region MA and the peripheral circuit region PA. A main channel layer 132m is disposed in the main element region MA and the peripheral circuit region PA. The main channel layer 132m extends in the second direction (Y direction) from one side to the other side of the main element region MA along the second direction (Y direction), and from one side to the other side of the peripheral circuit region PA along the second direction (Y direction).

[0143] In some embodiments, the main drain electrode 175m, the main gate electrode 155m, and the main source electrode 173m extend along the second direction (Y direction). For example, the main drain electrode 175m and the main gate electrode 155m extend in the second direction (Y direction) from one side to the other side in the main element region MA, and from one side to the other side in the second direction (Y direction) in the peripheral circuit region PA. The main source electrode 173m extends in the second direction (Y direction) from one side to the other side of the main element region MA along the second direction (Y direction) and passes through at least a part of the peripheral circuit region PA. The length of the main source electrode 173m along the second direction (Y direction) is shorter than the length of the main drain electrode 175m along the second direction (Y direction) and the length of the main gate electrode 155m along the second direction (Y direction).

[0144] The channel pattern 132r according to some embodiments is disposed between the sensing electrode SE and the main source electrode 173m. The channel pattern 132r refers to the portion of the main channel layer 132m disposed between the sensing electrode SE and the main source electrode 173m. That is, the channel pattern 132r and the main channel layer 132m can be integrally formed. The explanation regarding this is omitted since it is substantially the same as the embodiment shown in FIGS. In the peripheral circuit area PA, no isolation structure is disposed between the main source electrode 173m and the main gate electrode 155m. That is, the main channel layer 132m and the barrier layer 136 are disposed between the main source electrode 173m and the main gate electrode 155m. Furthermore, no isolation structure is disposed between the channel pattern 132r and the main channel layer 132m. However, without being limited thereto, for example, isolation structures may be disposed between the main source electrode 173m and the main gate electrode 155m, and between the channel pattern 132r and the main channel layer 132m in the peripheral circuit region PA.

[0145] In some embodiments, the channel pattern 132r includes a resistor in the sub-drift region DTRs2. In this case, the sub-drift region resistance has a temperature coefficient of resistance (TCR) with a positive sign. In one embodiment, the contact resistances RC1 and RC2 have different values ​​depending on the temperature. For example, the contact resistances RC1 and RC2 decrease as the temperature increases. Furthermore, the resistance of the first contact interface between the sensing electrode SE and the channel pattern 132r and the resistance of the second contact interface between the main source electrode 173m and the channel pattern 132r have a negative temperature coefficient of resistance TCR.

[0146] The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the technical scope of the present invention. [Explanation of symbols]

[0147] 100 Main Transistor 110 Substrate 120 buffer layer 121 seed layer 124 Superlattice layer 126 High resistance layer 132m main channel layer 132r Channel Pattern 132s subchannel layer 134 Two-dimensional electron gas 136 Barrier Layer 140 Protective layer 152 Gate semiconductor layer 155m Main gate electrode 155s sub-gate electrode 160 Separation Structure 173m Main source electrode 175m Main drain electrode 175s sub-drain electrode 300 Peripheral circuit elements 310 Sub-transistor 320 Resistive element 500 sensing part

Claims

1. A semiconductor device having a main transistor, a sub-transistor connected to one end of the main transistor, and a resistance element connected between the other end of the main transistor and the sub-transistor, the semiconductor device includes a channel layer; The main transistor is a main channel layer comprising a first portion of the channel layer; a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer, The sub-transistor is a sub-channel layer comprising a second portion of the channel layer, the sub-channel layer including a first sub-drift region having a first two-dimensional electron gas (2DEG) region; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; a sub-gate electrode disposed on the sub-channel layer; a sensing electrode disposed on the sub-channel layer and located on one side of the sub-gate electrode; The width of the sub-channel layer is different from the width of the main channel layer; the resistor element is formed from a third portion of the channel layer, electrically connected between the sensing electrode and the main source electrode, and includes a channel pattern including a second sub-drift region having a second two-dimensional electron gas (2DEG) region.

2. the resistance of the second sub-drift region has a positive temperature coefficient of resistance; a resistance of a first contact between the sensing electrode and the channel pattern and a resistance of a second contact between the main source electrode and the channel pattern have a negative temperature coefficient of resistance; 2. The semiconductor device according to claim 1, wherein the sum of the resistance of the second sub-drift region, the resistance of the first contact, and the resistance of the second contact is substantially constant regardless of temperature.

3. 2. The semiconductor device of claim 1, wherein the width of the sub-channel layer is smaller than the width of the main channel layer.

4. The main drain electrode and the sub-drain electrode extend in a first direction, 2. The semiconductor device of claim 1, wherein the channel pattern includes a portion extending in the first direction.

5. 5. The semiconductor device of claim 4, wherein a width of the channel pattern in a second direction intersecting the first direction is the same as a width of the main source electrode in the second direction.

6. 5. The semiconductor device of claim 4, wherein the length of the channel pattern between the sensing electrode and the main source electrode in the first direction is 1 μm to 10 μm.

7. 7. The semiconductor device of claim 6, wherein the length of the channel pattern between the sensing electrode and the main source electrode in the first direction is 3 μm to 4 μm.

8. the channel pattern is disposed in the same layer as the main channel layer and the sub-channel layer; 2. The semiconductor device of claim 1, wherein the channel pattern includes the same material as the main channel layer and the sub-channel layer.

9. The semiconductor device of claim 1 , wherein the barrier layer is further disposed on the sub-channel layer and the channel pattern.

10. the sub-gate electrode is integral with the main gate electrode, The semiconductor device of claim 9 , wherein the sub-drain electrode is integral with the main drain electrode.

11. The semiconductor device of claim 9 , wherein the gate semiconductor layer is further disposed between the barrier layer and the sub-gate electrode.

12. 2. The semiconductor device of claim 1, further comprising an isolation structure disposed between the resistor element and the sub-transistor and penetrating the barrier layer.

13. The semiconductor device of claim 1 , wherein the resistor element further comprises a contact electrode located on the channel pattern and between the sensing electrode and the main source electrode.

14. The resistive element is a first resistor element including a first channel pattern located between the main source electrode and the contact electrode; a second resistive element including a second channel pattern located between the contact electrode and the sensing electrode; 14. The semiconductor device of claim 13, wherein the length of the first channel pattern is the same as the length of the second channel pattern.

15. The main transistor, a sub-transistor connected to one end of the main transistor; a resistor element connected between the other end of the main transistor and the sub-transistor, the semiconductor device includes a channel layer; The main transistor is a main channel layer comprising a first portion of the channel layer; a barrier layer disposed on the main channel layer and including a material having an energy band gap different from that of the main channel layer; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode; a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer, The sub-transistor is a sub-channel layer comprising a second portion of the channel layer, the sub-channel layer including a first sub-drift region having a first two-dimensional electron gas (2DEG) region; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; a sub-gate electrode disposed on the sub-channel layer; a sensing electrode disposed on the sub-channel layer and located on one side of the sub-gate electrode; the resistive element includes a channel pattern including a second sub-drift region having a second two-dimensional electron gas (2DEG) region, the second sub-drift region being formed from a third portion of the channel layer and positioned between the sensing electrode and the main source electrode; The semiconductor device, wherein the length of the channel pattern between the sensing electrode and the main source electrode is 1 μm to 10 μm.

16. The subchannel layer comprises: a first portion located between the sub-gate electrode and the sub-drain electrode; a second portion located between the sub-gate electrode and the sensing electrode; 16. The semiconductor device of claim 15, wherein the width of the second portion of the sub-channel layer is smaller than the width of the first portion of the sub-channel layer.

17. 17. The semiconductor device of claim 16, wherein the width of the second portion of the sub-channel layer is the same as the width of the channel pattern.

18. a resistance value of the resistive element is defined as a sum of a resistance of the second sub-drift region, a resistance of a first contact between the main source electrode and the channel pattern, and a resistance of a second contact between the sensing electrode and the channel pattern; 16. The semiconductor element according to claim 15, wherein the resistance value of the resistor element at a first temperature is the same as the resistance value of the resistor element at a second temperature different from the first temperature.

19. 16. The semiconductor device of claim 15, wherein the width of the sub-channel layer is smaller than the width of the main channel layer.

20. A semiconductor device including a main transistor, a sub-transistor connected to one end of the main transistor, and a resistance element connected between the other end of the main transistor and the sub-transistor, the semiconductor device includes a channel layer; The main transistor is a main channel layer comprising a first portion of the channel layer and including GaN; a barrier layer disposed on the main channel layer and including AlGaN; a main gate electrode disposed on the barrier layer; a gate semiconductor layer disposed between the barrier layer and the main gate electrode, the gate semiconductor layer including GaN doped with p-type impurities; a main source electrode and a main drain electrode disposed on both sides of the main gate electrode and connected to the main channel layer, The sub-transistor is a sub-channel layer comprising a second portion of the channel layer, the sub-channel layer including the same material as the main channel layer and including a first sub-drift region having a first two-dimensional electron gas (2DEG) region; a sub-drain electrode connected to the sub-channel layer and extending from one end of the main drain electrode; a sub-gate electrode disposed on the sub-channel layer; a sensing electrode disposed on the sub-channel layer and located on one side of the sub-gate electrode; The width of the sub-channel layer is different from the width of the main channel layer; the resistor element includes a channel pattern including a second sub-drift region having a second two-dimensional electron gas (2DEG) region, the second sub-drift region being formed of a third portion of the channel layer and including the same material as the main channel layer and being located between the sensing electrode and the main source electrode; the resistance of the second sub-drift region has a positive temperature coefficient of resistance; a resistance of a first contact between the sensing electrode and the channel pattern and a resistance of a second contact between the main source electrode and the channel pattern have a negative temperature coefficient of resistance; A semiconductor device, wherein a sum of a resistance of the second sub-drift region, a resistance of the first contact, and a resistance of the second contact is substantially constant regardless of temperature.

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