Substrate processing apparatus and substrate processing method

JP2025151561A5Pending Publication Date: 2026-08-03SHIBAURA MECHATRONICS CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
SHIBAURA MECHATRONICS CORP
Filing Date
2024-03-28
Publication Date
2026-08-03

AI Technical Summary

Technical Problem

Existing freeze cleaning methods for substrates, such as semiconductor wafers, result in condensation on the rotating body facing the substrate due to cooling, leading to droplet formation and contamination.

Method used

A substrate processing apparatus with a rotating body that maintains a space between the substrate and its mounting section, supplies cooling gas to this space to freeze the substrate's surface, and includes a detection and removal system to eliminate droplets on the rotating body's surface.

Benefits of technology

Prevents droplets from adhering to the substrate, enhancing its cleanliness by effectively removing condensation on the rotating body surface.

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Abstract

To provide a substrate processing apparatus and a substrate processing method that can prevent droplets from remaining on the surface of a rotating body that faces a substrate, thereby increasing the cleanliness of the substrate.SOLUTION: A substrate processing apparatus 1 according to an embodiment includes a rotating body 10 having a mounting portion 13 on which a substrate W having a surface to be processed on one side is placed, and on which the substrate W is placed so as to maintain a space between the surface of the rotation body facing the substrate W and the surface opposite to the surface to be processed of the substrate W, a rotation drive portion 16 that rotates the rotating body 10, a first liquid supply portion 30 and a second liquid supply portion 40 that supply liquid to the surface to be processed of the substrate W, a cooling portion 20 that supplies cooling gas G to the space between the substrate W and the mounting portion 13, and a removal portion 90 that removes droplets from the surface to be processed of the substrate W on the rotating body 10.SELECTED DRAWING: Figure 2
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Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] Freeze cleaning is known as one method for removing foreign matter such as particles adhering to the processing surface of a substrate such as an imprint template, a photolithography mask, or a semiconductor wafer.

[0003] In freeze cleaning, various liquids can be used for cleaning. When pure water is used for cleaning, first, pure water and cooling gas are supplied to the surface of the substrate being rotated. Next, the supply of pure water is stopped, and some of the supplied pure water is discharged from the substrate, forming a water film (liquid film) on the surface of the substrate being processed. The water film is frozen by the cooling gas supplied to the substrate. When the water film freezes to form an ice film, foreign matter such as particles are captured in the ice film and separated from the surface of the substrate being processed. Next, pure water is supplied to the ice film to melt it, and the foreign matter is removed from the surface of the substrate being processed along with the pure water.

[0004] However, if cooling gas is supplied from the side of the substrate where the water film is formed, freezing will begin from the surface side of the water film (the side of the water film opposite the substrate side). If freezing begins from the surface side of the water film, it will be difficult to separate foreign matter adhering to the surface of the substrate to be processed from the surface of the substrate to be processed. Therefore, a technology has been proposed in which cooling gas is supplied from the side of the substrate opposite the surface to be processed (the side of the substrate opposite the side on which the water film is formed) (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2018-026436 Summary of the Invention [Problem to be solved by the invention]

[0006] However, supplying cooling gas to a substrate cools not only the substrate but also the rotor, which includes a mounting portion for mounting the substrate. When the rotor cools and its temperature drops, the surrounding atmosphere is cooled by the cooled rotor, causing condensation to form on the rotor's surface facing the substrate. This condensation leaves droplets containing particles and other particles in the atmosphere on the rotor's surface facing the substrate. These remaining droplets may contaminate the substrate, particularly the surface opposite the surface being processed.

[0007] An embodiment of the present invention has been proposed to solve the above-mentioned problems, and its purpose is to provide a substrate processing apparatus and a substrate processing method that can prevent droplets from remaining on the surface of a rotating body facing a substrate and increase the cleanliness of the substrate. [Means for solving the problem]

[0008] A substrate processing apparatus according to an embodiment of the present invention comprises a rotating body having a mounting section for mounting a substrate having a surface to be processed on one side, the mounting section being configured to maintain a space between the surface of the substrate opposite the surface to be processed and the substrate; a rotation drive section for rotating the rotating body; a liquid supply section for supplying liquid to the surface to be processed of the substrate; a cooling section for supplying cooling gas to the space between the substrate and the mounting section; and a removal section for removing droplets from the surface of the rotating body facing the substrate.

[0009] A substrate processing method according to an embodiment of the present invention involves placing a substrate on a mounting section, rotating a rotating body equipped with the mounting section while the substrate is mounted, supplying a liquid to a surface to be processed, which is the surface of the substrate opposite the mounting section, and supplying a cooling gas to the space between the substrate and the mounting section to freeze the liquid supplied to the surface to be processed, thereby removing foreign matter on the surface to be processed by incorporating it into the liquid, and removing droplets present on the surface of the rotating body facing the substrate. [Effects of the Invention]

[0010] According to the embodiment of the present invention, it is possible to suppress droplets from remaining on the surface of the rotating body facing the substrate, thereby increasing the cleanliness of the substrate. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is an overall configuration diagram showing a configuration before a substrate is carried in the substrate processing apparatus of the first embodiment. [Figure 2] FIG. 2 is an overall configuration diagram showing the configuration when a substrate is carried into the substrate processing apparatus of the first embodiment. [Figure 3] 2 is a configuration diagram showing the configurations of a rotating body, a detection unit, and a removal unit of the substrate processing apparatus according to the first embodiment. FIG. [Figure 4] 5 is a flowchart showing the operation of the substrate processing apparatus according to the first embodiment. [Figure 5] 4 is a schematic diagram showing the configuration of a rotating body, a detection unit, and a removal unit after the substrate has been carried out in the first embodiment. FIG. [Figure 6] 3 is a schematic diagram showing the position of a sensor part of a detection unit when detecting droplets in the first embodiment. FIG. [Figure 7] 5 is a schematic diagram showing the position of a nozzle of a removal unit when removing droplets in the first embodiment. FIG. [Figure 8] FIG. 10 is a schematic diagram showing the configuration of a removal unit in a modified example of the first embodiment. [Figure 9] FIG. 10 is a schematic diagram showing the configuration of a removal unit in a modified example of the first embodiment. [Figure 10] FIG. 10 is an overall configuration diagram showing the configuration when a substrate is carried into the substrate processing apparatus of the second embodiment. [Figure 11] FIG. 10 is a plan view showing the configuration of a dispersion plate according to a second embodiment. [Figure 12] FIG. 10 is an explanatory diagram showing the remaining positions of droplets in the second embodiment. [Figure 13] FIG. 10 is a schematic diagram showing the position of the nozzle of the removal unit when removing droplets in the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] [1. First embodiment] [1-1. Equipment Overview]

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that in each drawing, similar components are given the same reference numerals, and detailed description will be omitted as appropriate. The substrate W to be processed can be, for example, a semiconductor wafer, an imprint template, a photolithography mask substrate, a plate-like body used in MEMS (Micro Electro Mechanical Systems), etc. However, the use of the substrate W is not limited to these. When the substrate W is a photolithography mask, the planar shape of the substrate W can be approximately rectangular. In this embodiment, the planar shape of the substrate W is circular. Furthermore, the surface of the substrate W on which an uneven portion is formed is referred to as the processed surface. The uneven portion can be, for example, a pattern.

[0014] As shown in FIGS. 1 and 2, the substrate processing apparatus 1 of this embodiment cleans the processing surface of the substrate W by freeze cleaning.

[0015] In freeze cleaning, a cooling gas is used to freeze a liquid supplied to the processing surface of the substrate W. In this case, while the substrate W is being rotated, a liquid is supplied to the processing surface of the substrate W, and a cooling gas is supplied from the side of the substrate W opposite the processing surface to cool the substrate W, thereby cooling and freezing the liquid on the processing surface. For this purpose, the substrate processing apparatus 1 is provided with a rotating body including a mounting section on which the substrate W is placed so as to maintain a space between the mounting section and the surface opposite the processing surface of the substrate W, and a cooling gas is supplied between the mounting section and the substrate W while the rotating body is rotated by a rotation drive section.

[0016] In this manner, the cooling gas cools not only the substrate W but also the rotating body having a mounting portion on which the substrate W is mounted, particularly the surface of the rotating body facing the surface opposite to the surface to be processed of the substrate W. Therefore, for example, when the substrate W whose surface to be processed has been cleaned is carried out of the housing, ambient air at room temperature flows in from outside the housing around the rotating body, and the inflowing ambient air is cooled by the cooled rotating body. As the inflowing ambient air is cooled by the rotating body, droplets due to condensation occur on the surface of the rotating body facing the substrate W. The substrate processing apparatus 1 of this embodiment determines whether droplets remain on the surface of the rotating body facing the substrate W, and performs a process to remove the droplets if it is determined that droplets remain.

[0017] [1-2. Configuration of the first embodiment] In order to perform the above-described processing, the substrate processing apparatus 1 of this embodiment includes a rotator 10 having a mounting section 13 on which a substrate W is mounted, a cooling section 20 that supplies a cooling gas G between the substrate W and the mounting section 13, a first liquid supply section 30 that supplies a first liquid (processing liquid L1) to the surface to be processed, a second liquid supply section 40 that supplies a second liquid (processing liquid L2) to remove the frozen first liquid from the surface to be processed, a housing 60 that accommodates the rotator 10 and other components and forms a space for processing the substrate W, a detection section 80 that detects droplets D on the surface of the rotator 10 facing the substrate W, a removal section 90 that removes droplets D generated on the surface of the rotator 10 facing the substrate W, and a control section 100 that controls each section. The configuration of each section will be described in detail below.

[0018] (rotating body) The rotor 10 has a disk-shaped rotor base 11, and a hollow rotation shaft 12 extending in the opposite direction from a mounting part 13 on which a substrate W is mounted at its center. The rotor base 11 has an opening in the center, and the disk-shaped mounting part 13, which also has an opening in the center, is fitted to the top of the rotor base 11. A nozzle head 14 inserted into the hollow rotation shaft 12 is provided in the central opening of the mounting part 13. The nozzle head 14 is fixed to a frame (not shown) at a fixed distance from the mounting part 13 and the rotation shaft 12, and the nozzle head 14 does not rotate even when the rotor 10 rotates. A through-hole is formed in the center of the nozzle head 14 as a cooling nozzle 24 of the cooling part 20, which will be described later. Here, the surface of the rotor 10 facing the substrate W (hereinafter referred to as the facing surface) includes the surface of the mounting part 13 facing the substrate W and the surface of the nozzle head 14 facing the substrate W.

[0019] A plurality of holders 15 are provided at predetermined intervals around the outer periphery of the placement unit 13. The substrate W is placed on the placement unit 13 so that a space is created between the substrate W and the placement unit 13 by placing the substrate W on these holders 15. A rotation shaft 12 provided on the rotating body base 11 is connected to a rotation drive unit 16 supported on a frame or the like (not shown). The rotation base 11, placement units 13, and holders 15 rotate together around the rotation shaft 12 by the rotation drive unit 16.

[0020] The rotating base 11 and the mounting portion 13 are preferably made of a material that is resistant to the processing liquids L1 and L2, for example, a fluorine-based resin such as PTFE (Polytetrafluoroethylene) or PCTFE (Polychlorotrifluoroethylene).

[0021] The holding portion 15 rotates around an axis parallel to the rotation axis 12 of the rotating body 10 by a drive mechanism (not shown) built into the rotating body 10, thereby moving between a holding position where it contacts the peripheral edge of the substrate W to hold the substrate W, and a release position where it releases the substrate W by moving away from the peripheral edge of the substrate W.

[0022] (cooling section) The cooling unit 20 supplies cooling gas G to the space between the substrate W and the mounting unit 13. The cooling unit 20 includes a cooling gas generator 21, a filter 22, a flow rate controller 23, and a cooling nozzle 24, which is a through-hole formed in the nozzle head 14, all of which are provided outside the housing 60. The cooling gas G supplied to the space between the substrate W and the mounting unit 13 is guided to the outer periphery of the mounting unit 13, and cools the entire substrate W.

[0023] The cooling gas generator 21 stores a cooling liquid and generates a cooling gas G. The cooling liquid is a liquefied cooling gas G. The cooling gas G is not particularly limited as long as it is a gas that does not easily react with the material of the substrate W and does not contain moisture, and can be, for example, an inert gas such as nitrogen gas, helium gas, or argon gas.

[0024] The cooling gas generator 21 includes a tank for storing a cooling liquid and an evaporator for evaporating the cooling liquid stored in the tank. The temperature of the generated cooling gas G may be any temperature that can cool the processing liquid L1 to a temperature lower than the freezing point of the processing liquid L1 and place it in a supercooled state. Therefore, the temperature of the generated cooling gas G can be set to a temperature lower than the freezing point of the processing liquid L1, for example, -170°C.

[0025] The filter 22 is provided in a pipe that connects the cooling gas generator 21 and the cooling nozzle 24. The filter 22 removes foreign matter such as particles contained in the generated cooling gas G.

[0026] The flow rate control unit 23 is provided on a pipe connecting the cooling gas generation unit 21 and the cooling nozzle 24. The flow rate control unit 23 controls the flow rate of the cooling gas G supplied to the space between the substrate W and the mounting unit 13. The flow rate control unit 23 may be, for example, an MFC (Mass Flow Controller). Alternatively, the flow rate control unit 23 may indirectly control the flow rate of the cooling gas G by controlling the supply pressure of the cooling gas G. In this case, the flow rate control unit 23 may be, for example, an APC (Automatic Pressure Controller).

[0027] (1st liquid supply section) The first liquid supply unit 30 supplies the processing liquid L1 to the processing surface of the substrate W. The first liquid supply unit 30 includes a liquid storage unit 31 that stores the processing liquid L1, a supply unit 32 such as a pump, a flow rate control unit 33 such as a flow rate control valve, and a liquid nozzle 34 that discharges the processing liquid L1 onto the processing surface of the substrate W. The liquid storage unit 31 is connected to the liquid nozzle 34 via a pipe. The supply unit 32 and the flow rate control unit 33 are provided on the pipe connecting the liquid storage unit 31 and the liquid nozzle 34. The liquid storage unit 31, the supply unit 32, and the flow rate control unit 33 are provided outside the housing 60, and the liquid nozzle 34 is provided inside the housing 60. The processing liquid L1 is not particularly limited as long as it is a liquid that does not easily react with the material of the substrate W and increases in volume when frozen. The processing liquid L1 can be, for example, pure water, ultrapure water, or a liquid mainly composed of water.

[0028] The tip of liquid nozzle 34 faces approximately the center of the processing surface of substrate W held by holder 15. Processing liquid L1 discharged from liquid nozzle 34 to the center of the processing surface of substrate W spreads from the center to the periphery of the processing surface due to centrifugal force generated when substrate W is rotated, and forms a liquid film having a certain thickness on the processing surface of substrate W.

[0029] (Second liquid supply section) The second liquid supply unit 40 supplies a processing liquid L2 to remove the processing liquid L1 frozen on the processing surface of the substrate W. The second liquid supply unit 40 includes a liquid storage unit 41 that stores the processing liquid L2, a supply unit 42 such as a pump, and a flow rate control unit 43 such as a flow rate control valve. The liquid storage unit 41 is connected to the liquid nozzle 34 of the first liquid supply unit 30 via a pipe. Therefore, the liquid nozzle 34 discharges the processing liquid L2 onto the processing surface of the substrate W. The supply unit 42 and the flow rate control unit 43 are provided on the pipe connecting the liquid storage unit 41 and the liquid nozzle 34. The liquid storage unit 41, the supply unit 42, and the flow rate control unit 43 are provided outside the housing 60. The processing liquid L2 is not particularly limited as long as it is unlikely to react with the material of the substrate W and is unlikely to remain on the substrate W during the drying process described below. The processing liquid L2 can be, for example, pure water, ultrapure water, or a mixture of water and alcohol. The processing liquid L2 may be the same liquid as the processing liquid L1. In that case, the second liquid supply unit 40 can be omitted. In addition, although the liquid nozzle 34 is used as the nozzle for ejecting both the processing liquid L1 and the processing liquid L2 in the example described above, a liquid nozzle for ejecting the processing liquid L1 and a liquid nozzle for ejecting the processing liquid L2 can also be provided separately.

[0030] (Housing) The housing 60 is box-shaped and accommodates various mechanisms, such as the rotator 10 having a mounting portion 13 on which the substrate W is mounted, to form a space for processing the substrate W. The housing 60 also has a transfer port (not shown) for loading and unloading the substrate W. The air blower 70 supplies air 71 from above the housing 60 toward the substrate W. The air blower 70 is provided on the ceiling surface of the housing 60. The air blower 70 can also be provided on the side surface of the housing 60 facing the ceiling. The air blower 70 can include a blower such as a fan and a filter. The filter can be, for example, a HEPA (High Efficiency Particulate Air) filter. A cover 61 is provided inside the housing 60. The cover 61 receives the processing liquid L1 or L2 discharged to the outside of the substrate W as the substrate W rotates. A partition plate 62 is provided inside the housing 60. The partition plate 62 is provided between the outer surface of the cover 61 and the inner surface of the housing 60. An exhaust port 63 is provided on the side surface on the bottom side of the housing 60. The cooling gas G, the air 71, the outside air that has flowed into the housing 60, the processing liquid L1, and the processing liquid L2 are exhausted to the outside of the housing 60 from the exhaust port 63.

[0031] An exhaust pipe 63a is connected to the exhaust port 63, and an exhaust unit (pump) 64 is connected to the exhaust pipe 63a, which exhausts the cooling gas G, air 71, and outside air that has flowed into the housing 60. In addition, an exhaust pipe 63b is also connected to the exhaust port 63, which exhausts the processing liquids L1 and L2.

[0032] [1-3. Configuration of the detection unit and removal unit] The substrate processing apparatus 1 of this embodiment having the above-described configuration is further provided with a detection unit 80 and a removal unit 90 to prevent droplets D generated by condensation from remaining on the surface of the rotating body 10 facing the substrate W. These will be described in detail below.

[0033] (Detection unit) The detection unit 80 detects droplets D that have formed on the opposing surface of the rotating body 10 due to condensation after the substrate W has been cleaned and carried out. The detection unit 80 includes a sensor unit 81 and a movement mechanism .

[0034] The sensor unit 81 is configured to be movable above the opposing surface of the rotating body 10 by a moving mechanism 82. The sensor unit 81 moves from the outside to the inside of the opposing surface of the rotating body 10 as shown by the arrow in FIG. 3, capturing an image of the entire opposing surface of the rotating body 10. For example, an IR camera or a CCD camera can be used as the sensor unit 81. In this embodiment, the sensor unit 81 detects the droplets D by capturing a still image while the rotation of the rotating body 10 is stopped. Alternatively, the sensor unit 81 may be fixed above the opposing surface of the rotating body 10 and detect the droplets D by capturing a video image while the rotating body 10 is rotating. The moving mechanism 82 moves the sensor unit 81 between a standby position away from above the opposing surface of the rotating body 10 and an imaging position where the sensor unit 81 captures an image from above the opposing surface of the rotating body 10. The moving mechanism 82 includes a rotation support unit 82a that moves the sensor unit 81 and an arm unit 82b that supports the sensor unit 81. The movement mechanism 82 moves the sensor unit 81 by rotating the arm unit 82b in the horizontal direction using the rotation support unit 82a.

[0035] (Removal part) The removal unit 90 removes droplets D remaining on the opposing surface of the rotor 10 by blowing out gas A. The removal unit 90 has a blowout unit 91 and a movement mechanism 92. The blowout unit 91 has a pipe 91a connected to an air supply device (not shown), and the tip of the pipe 91a forms a nozzle 91b directed toward the rotor 10. The gas A blown out by the blowout unit 91 is a gas that does not contain moisture and has a temperature above room temperature, and N2 gas, clean air, or the like is used.

[0036] The movement mechanism 92 moves the nozzle 91b between a standby position where the nozzle 91b is not above the opposing surface of the rotating body 10 and a blowing position where the nozzle 91b blows the gas A downward from above the opposing surface of the rotating body 10. The movement mechanism 92 also swings the nozzle 91b blowing the gas A at the blowing position. The movement mechanism 92 has a rotation support part 92a that moves the nozzle 91b and an arm part 92b that supports the nozzle 91b. The movement mechanism 92 moves the nozzle 91b by rotating the arm part 92b in the horizontal direction using the rotation support part 92a.

[0037] (Control unit) The control unit 100 controls each part of the substrate processing apparatus 1. The control unit 100 has a processor that executes programs to realize the various functions of the substrate processing apparatus 1, a storage unit that stores various information such as the programs and operating conditions, and a drive circuit that drives each element. The control unit 100 is composed of a control unit that performs various controls necessary for cleaning the processing surface of the substrate W placed on the placement unit 13, and a control unit that performs various controls necessary for removing the droplets D remaining on the opposing surface of the rotating body 10.

[0038] The control unit 100 includes a mechanism control unit 110 that controls the driving of the rotation drive unit 16, the holding unit 15, etc., as a control unit for cleaning the processing surface of the substrate W, and a supply control unit 120 that controls the supply of the processing liquid L1 and the processing liquid L2, and the supply of the cooling gas G.

[0039] The control unit 100 further includes a detection control unit 130, a determination unit 140, and a removal control unit 150 as control units for removing the droplets D remaining on the opposing surface of the rotating body 10.

[0040] The detection control unit 130 moves the sensor unit 81 to detect droplets D remaining on the opposing surface of the rotating body 10, and controls the setting of imaging conditions in the sensor unit 81 and the timing of imaging. When detecting droplets D, the detection control unit 130 controls the movement mechanism 82 to move the sensor unit 81 from the standby position to the imaging position. After the sensor unit 81 reaches the imaging position, the detection control unit 130 outputs an imaging command to the sensor unit 81, thereby imaging the opposing surface of the rotating body 10.

[0041] The determination unit 140 determines whether or not droplets D remain on the surface of the rotating body 10 facing the substrate W. The determination unit 140 performs image processing (for example, binarization) on the image captured by the sensor unit 81, processing the area of ​​the droplets D so that it can be distinguished from other areas, thereby determining whether or not droplets D remain on the facing surface of the rotating body 10. For example, if the ratio of the area of ​​the droplets D to the area of ​​the facing surface of the rotating body 10 in the image captured by the sensor unit 81 exceeds a threshold, or if the ratio of the area not covered by the droplets D is equal to or less than a threshold, it is determined that droplets D remain.

[0042] The removal control unit 150 moves the nozzle 91b to remove the droplets D remaining on the opposing surface of the rotating body 10, and also controls the amount of gas A blown out from the nozzle 91b and the timing of the blowing. When removing the remaining droplets D, the removal control unit 150 controls the movement mechanism 92 to move the nozzle 91b from the standby position to the blowing position. After the nozzle 91b reaches the blowing position, the removal control unit 150 causes the nozzle 91b to eject the gas A at a predetermined flow rate. When the determination unit 140 determines that droplets D remain, the removal control unit 150 of this embodiment causes the removal unit 90 to remove the droplets D.

[0043] [1-4. Operation of the First Embodiment] The operation of the substrate processing apparatus 1 of this embodiment as described above will be described with reference to the flowchart in Fig. 4 and Figs. 5 to 7 in addition to Figs. 1 to 3. In the description, the operation will be divided into an operation for cleaning the processing surface of the substrate W (steps S01 to S06) and an operation for removing the droplets D remaining on the opposing surface of the rotating body 10 (steps S07 to S14).

[0044] (Operation of cleaning the processing surface of the substrate W) As shown in Fig. 1, before the substrate W is carried into the housing 60, the detection unit 80 and the removal unit 90 are in their standby positions. In this state, the substrate W carried on the hand of the transport robot is carried above the rotating body 10 and placed on the placement unit 13. As shown in Fig. 2, the substrate W placed on the placement unit 13 has its periphery held by a plurality of holders 15 (step S01). At this time, the substrate W is positioned so that its center coincides with the axis of rotation of the rotating body 10.

[0045] After the substrate W is held by the holder 15, a freeze cleaning process including a preliminary process, a cooling process (supercooling process+freezing process), a thawing process, and a drying process is performed as shown in FIG.

[0046] In the preliminary step (step S02), the control unit 100 controls the supply unit 32 and the flow rate control unit 33 to supply the processing liquid L1 at a predetermined flow rate to the processing surface of the substrate W. The control unit 100 controls the flow rate control unit 23 to supply the cooling gas G at a predetermined flow rate from the surface of the substrate W opposite to the processing surface (the surface on the rotating body 10 side) to the space between the substrate W and the mounting unit 13. The mechanism control unit 110 controls the rotation drive unit 16 to rotate the substrate W at a predetermined rotation speed.

[0047] Here, when the substrate W is cooled by the supply of cooling gas G by the cooling unit 20, frost containing foreign matter in the atmosphere within the housing 60 may adhere to the substrate W, which may cause contamination of the substrate W. In the preliminary step, the cooling gas G is supplied from the side of the substrate W opposite the surface to be processed, and the processing liquid L1 is continuously supplied to the surface to be processed, thereby uniformly cooling the substrate W and preventing frost from adhering to the surface to be processed of the substrate W. For example, the rotation speed of the substrate W can be set to about 100 rpm, the flow rate of the processing liquid L1 to about 0.3 L / min, the flow rate of the cooling gas G to about 170 Nl / min, and the processing time of the preliminary step to about 1800 seconds.

[0048] In the cooling process (step S03) (supercooling process + freezing process), the supply of the processing liquid L1 supplied in the preliminary process is stopped, and the rotation speed of the substrate W is set to approximately 30 rpm. This rotation speed is set so that the processing liquid L1 supplied to the center of the processing surface of the substrate W spreads to the outer periphery of the processing surface of the substrate W, and a liquid film of uniform thickness is formed and maintained on the substrate W. In other words, the control unit 100 rotates the substrate W at a rotation speed lower than the rotation speed during the preliminary process. Furthermore, the thickness of the liquid film of the processing liquid L1 at this time can be set to a thickness that covers the convex portions of the unevenness formed on the processing surface of the substrate W. Furthermore, the flow rate of the cooling gas G is maintained at 170 NL / min. In this way, by continuing to supply the cooling gas G to the space between the substrate W and the mounting unit 13, the temperature of the liquid film (processing liquid L1) formed on the processing surface of the substrate W drops below the temperature during the preliminary process, and the liquid film enters a supercooled state (supercooling process). Even after the liquid film has reached a supercooled state, the cooling unit 20 continues to supply cooling gas G to the space between the substrate W and the mounting unit 13. As the cooling gas G continues to be supplied, the temperature of the liquid film on the processing surface of the substrate W further decreases, and at least a portion of the liquid film freezes (freezing step). As a result, foreign matter adhering to the processing surface of the substrate W is separated from the processing surface by the expansion of the liquid film and is taken into the frozen liquid film.

[0049] In the thawing step (step S04), the control unit 100 controls the supply unit 42 and the flow rate control unit 43 to supply the processing liquid L2 at a predetermined flow rate to the processing surface of the substrate W. The control unit 100 also controls the flow rate control unit 23 to stop the supply of the cooling gas G.

[0050] Furthermore, the control unit 100 controls the rotation drive unit 16 to increase the rotation speed of the substrate W. If the rotation speed of the substrate W increases, the processing liquid L1 and the frozen processing liquid L1 can be thrown off by centrifugal force and removed from the substrate W. This makes it easier to discharge the processing liquid L1 and the frozen processing liquid L1 from the substrate W. At this time, foreign matter separated from the processing surface of the substrate W is also discharged together with the processing liquid L1 and the frozen processing liquid L1.

[0051] In the drying step (step S05), the control unit 100 controls the supply unit 42 and the flow rate control unit 43 to stop the supply of the processing liquid L2. The control unit 100 also controls the rotation drive unit 16 to further increase the rotation speed of the substrate W. If the rotation speed of the substrate W is increased, the substrate W can be dried more quickly. The rotation speed of the substrate W is not particularly limited as long as drying is possible. In this manner, the substrate W can be cleaned.

[0052] In releasing and carrying out the substrate (step S06), the mechanism control unit 110 stops the rotation of the substrate W. Thereafter, the hand of the transport robot is inserted under the substrate W, the substrate W is released from the holder 15, and the substrate W is carried out by the hand of the transport robot.

[0053] (Operation to remove droplets remaining on the opposing surface of the rotating body) Next, an operation for removing droplets D remaining on the opposing surface of the rotor 10 will be described. As described above, during the preliminary process and the cooling process, cooling gas G is supplied to the space between the substrate W and the mounting part 13. Even after the subsequent thawing and drying processes, the temperature of the rotor 10 including the mounting part 13 remains lower than room temperature due to the influence of the cooling gas G. For example, in this state, when the transfer port of the housing 60 is opened to unload the substrate W and outside air flows in, the incoming outside air at room temperature is cooled by the cooled rotor 10. When the outside air at room temperature is cooled by the cooled rotor 10, droplets D due to condensation are formed on the opposing surface of the rotor 10, as shown in FIG. 5. The substrate processing apparatus 1 removes droplets D formed on the opposing surface of the rotor 10 through the processes from step S07 onwards.

[0054] In the imaging step (steps S07 to S09), an image of the opposing surface of the rotating body 10 is taken. When the substrate W is carried out from inside the housing 60, the detection control unit 130 controls the moving mechanism 82 to move the sensor unit 81 from the standby position to the imaging position as shown in FIG. 6 (step S07). The imaging position may be one location above the rotating body 10, or multiple locations. In the following description, the imaging position is assumed to be one location.

[0055] After the sensor unit 81 moves to the imaging position, the detection control unit 130 causes the sensor unit 81 to image the opposing surface of the rotating body 10 under predetermined conditions (step S08). The imaging results are stored in a memory unit within the control unit 100. After the imaging, the detection control unit 130 moves the sensor unit 81 from the imaging position to a standby position (step S09).

[0056] In the image processing step (step S10), the determination unit 140 processes the image captured by the sensor unit 81. The determination unit 140 processes the captured image so that the area of ​​the droplet D can be distinguished from other areas. The image after image processing is stored in a memory unit within the control unit 100.

[0057] In the determination step, the determination unit 140 determines whether or not droplets D remain on the opposing surface of the rotating body 10 based on the processed image (step S11). The determination unit 140 determines that droplets D remain when the ratio of the area of ​​the droplets D in the image to the area of ​​the opposing surface of the rotating body 10 exceeds a threshold value. Note that the determination unit 140 may determine that droplets D remain if at least one droplet D is present in the image.

[0058] If it is determined that droplets D remain on the opposing surface of the rotating body 10 (YES in step S11), a removal step (steps S12 to S14) is performed to remove the droplets D. The removal control unit 150 controls the movement mechanism 92 to move the nozzle 91b from the standby position to the blowing position (step S12).

[0059] After the nozzle 91b moves to the blowing position, the removal control unit 150 causes the blowing unit 91 to discharge gas A at a predetermined flow rate (step S13), as shown in FIG. 7 . The gas A discharged from the blowing unit 91 blows the droplets D remaining on the opposing surface of the rotating body 10 out of the rotating body 10 and removes them. While the gas A is being discharged from the blowing unit 91, the mechanism control unit 110 controls the rotation drive unit 16 to rotate the rotating body 10, and the removal control unit 150 controls the movement mechanism 92 to oscillate the nozzle 91b. This allows the droplets D remaining on the entire opposing surface of the rotating body 10 to be blown out of the rotating body 10 and removed. Furthermore, when dry air or other gas with low humidity is used as the gas A, it is possible to not only blow the droplets D away with the blowing pressure of the gas A, but also dry and remove the droplets D.

[0060] After the droplets D are removed, the mechanism control unit 110 stops the rotation of the rotating body 10, and the removal control unit 150 stops the ejection of the gas A from the blowing unit 91 and moves the nozzle 91b from the blowing position to the standby position (step S14). After the droplets D are removed, if there is a substrate W to be processed next, the process proceeds to loading the substrate W (NO in step S15). If there is no substrate W to be processed next, the process ends (YES in step S15).

[0061] If it is determined in the determination step that no droplets D remain (NO in step S11) and there is a substrate W to be processed next (NO in step S15), the process proceeds to loading of the substrate W (step S01). If there is no substrate W to be processed next, the process ends (YES in step S15).

[0062] [1-5. Effects of the First Embodiment] (1) The substrate processing apparatus 1 of this embodiment as described above includes a rotating body 10 having a mounting section 13 on which a substrate W having a processing surface on one side is mounted, the mounting section 13 on which the substrate W is mounted so as to maintain a space between the processing surface and the surface of the substrate W opposite the processing surface, a rotation drive section 16 that rotates the rotating body 10, liquid supply sections 30, 40 that supply processing liquids L1, L2 to the processing surface of the substrate W, a cooling section 20 that supplies cooling gas G to the space between the substrate W and the mounting section 13, and a removal section 90 that removes droplets D from the surface of the rotating body 10 facing the substrate W.

[0063] Therefore, in the substrate processing apparatus 1 of this embodiment, the removal unit 90 can remove the droplets D on the surface of the rotating body 10 facing the substrate W. As a result, it is possible to suppress the droplets D from remaining on the facing surface of the rotating body 10, prevent the droplets D from adhering to the substrate W to be processed next, and increase the cleanliness of the substrate W.

[0064] (2) In this embodiment, after the substrate W is unloaded, the droplets D are removed from the mounting unit 13 while the substrate W is not placed on it. One of the reasons for the droplets D forming condensation on the opposing surface of the rotor 10 is that the ambient air at room temperature that flows into the housing 60 is cooled by the rotor 10, which is cooled by the cooling gas G when the processing surface of the substrate W is cleaned. While the substrate W is placed on the mounting unit 13, the substrate W transfer port of the housing 60 is closed and the inflow of ambient air is small, so the amount of droplets D formed by condensation on the opposing surface of the rotor 10 is small. However, when the cleaning process using the freeze cleaning method is completed and the substrate W is unloaded from the housing 60, ambient air flows into the housing 60. The inflowing ambient air is cooled by the rotor 10, which is cooled by the cooling gas G, and a large amount of droplets D formed by condensation remains on the opposing surface of the rotor 10.

[0065] Therefore, in this embodiment, the droplets D are not removed by the remover 90 when the substrate W is placed on the mounting part 13, where droplets D are likely to be generated, but are removed when no substrate W is placed on the mounting part 13. In this way, in this embodiment, by predicting in advance the conditions under which droplets D are likely to be generated on the opposing surface of the rotor 10 and removing the droplets D remaining on the opposing surface of the rotor 10 by the remover 90, it is possible to prevent the droplets D from adhering to the substrate W to be processed next with a minimum number of steps, and to increase the cleanliness of the substrate W.

[0066] At the same time, in this embodiment, the detection unit 80 detects the droplets D or the removal unit 90 removes the droplets D without the substrate W being placed on the placement unit 13. This prevents the substrate W from interfering with the detection or removal of the droplets D, thereby improving the detection accuracy and removal efficiency of the droplets D.

[0067] (3) This embodiment includes a detection unit 80 that detects droplets D on the opposing surface of the rotating body 10, and a control unit 100 that causes the removal unit 90 to remove the droplets D based on the detection result by the detection unit 80. Therefore, by removing the droplets D when it is determined that the droplets D remain on the opposing surface of the rotating body 10, the efficiency of the droplet D removal process can be improved.

[0068] (4) The removal unit 90 removes the droplets D from the opposing surface of the rotating body 10 by ejecting gas A onto the droplets D. This allows the droplets D on the opposing surface of the rotating body 10 to be removed in a short time. In addition, particles and the like contained in the droplets D can be removed together with the droplets D.

[0069] The temperature of the gas A discharged by the removal unit 90 is equal to or higher than room temperature. As a result, the discharge of the gas A removes the droplets D from the facing surface of the rotating body 10, and the temperature of the facing surface of the rotating body 10 becomes equal to or higher than room temperature. Therefore, after the droplets D are removed by the removal unit 90, the atmosphere around the rotating body 10 is cooled by the facing surface of the rotating body 10, and it is possible to prevent droplets D from re-appearing on the facing surface of the rotating body 10 until the next substrate W is loaded.

[0070] 2. Other Embodiments The above describes exemplary embodiments of the present invention. However, the present invention is not limited to these descriptions. Design modifications made by a person skilled in the art to the above-described embodiments are also encompassed within the scope of the present invention as long as they incorporate the features of the present invention. For example, the shape, dimensions, number, and arrangement of each element of the substrate processing apparatus 1 are not limited to those illustrated and can be modified as appropriate.

[0071] (1) In the first embodiment, the removal unit 90 removed the droplets D by blowing the gas A onto the droplets D. However, any mechanism capable of removing the droplets D may be used. For example, the droplets D may be removed by heating the droplets D. FIG. 8 is a diagram showing the configuration of the removal unit 90 of a modified example of this embodiment. As shown in FIG. 8, the removal unit 90 includes a heater 93 instead of the blowout unit 91 that blows out the gas A. The removal unit 90 also includes a movement mechanism 92 that can move the heater 93 between a standby position away from above the rotating body 10 and a heating position facing the rotating body 10. The movement mechanism 92 may also be provided so that the heater 93 can be raised and lowered along the direction of extension of the rotation axis 12 of the rotating body 10. The heater 93 generates heat when energized. The heater 93 may be, for example, an LED, a halogen lamp, a quartz heater, or the like.

[0072] The removal unit 90 removes the droplets D by heating and evaporating them using heat from the heater 93. While the heater 93 is generating heat, the mechanism control unit 110 controls the rotation drive unit 16 to rotate the rotating body 10, and the removal control unit 150 controls the movement mechanism 92 to oscillate the heater 93. This allows the entire facing surface of the rotating body 10 to be heated, thereby removing the droplets D remaining on the facing surface. Furthermore, by using the heater 93 to heat the droplets D, it is possible to remove the droplets D over a wide area rather than locally, thereby minimizing the amount of droplets D that are left behind. Furthermore, by setting the temperature of the heater 93 to the minimum temperature necessary to remove the droplets D, it is possible to prevent the facing surface of the rotating body 10 from being heated more than necessary. This minimizes the time required to lower the temperature of the facing surface of the rotating body 10 before the next substrate W is loaded. The diameter of the heater 93 may be larger than the outer diameter of the mounting unit 13. In this case, the rotation of the rotor 10 and the oscillation of the heater 93, which are performed while the heater 93 is heating the droplets D, are omitted. This makes it possible to heat the entire opposing surface of the rotor 10 in a simple process, and to reliably remove the droplets D remaining on the opposing surface.

[0073] (2) As shown in FIG. 9, the removal unit 90 may be replaced by a blowout unit 91 that blows out gas A, and the droplets D may be removed by rotating the rotor 10 using the centrifugal force. In this case, the nozzle head 14 is provided to be rotatable. By rotating the nozzle head 14 in addition to the rotor base 11, mounting unit 13, and holding unit 15 of the rotor 10, the droplets D on the opposing surface of the rotor 10 move toward the outer periphery and are discharged from the end of the mounting unit 13 to the outside of the rotor 10. This configuration can simplify the processing process.

[0074] (3) As shown in Fig. 10, a dispersion plate 25 can be provided on the cooling gas G discharge side of the cooling nozzle 24. This dispersion plate 25 disperses the cooling gas G supplied from the cooling nozzle 24. This allows the entire substrate W to be cooled uniformly. As shown in Fig. 11, the dispersion plate 25 is a disk-shaped member with holes 25a formed in multiple locations. The dispersion plate 25 is fixed to the nozzle head 14 via a support member 26.

[0075] 12 is a schematic diagram showing droplets D remaining after the substrate W is unloaded from the substrate processing apparatus 1 provided with the dispersion plate 25. The rotator 10 and dispersion plate 25 are cooled by the cooling gas G supplied when the substrate W is cleaned. For example, in this state, when the substrate W transfer port of the housing 60 is opened to unload the substrate W and outside air flows in, the room-temperature outside air is cooled by the cooled rotator 10 and dispersion plate 25. Therefore, as shown in FIG. 12, droplets D are formed by condensation on the opposing surface of the dispersion plate 25 (the surface of the dispersion plate 25 facing the substrate W) and the opposing surface of the rotator 10. In this embodiment, if the determination unit 140 determines that droplets D remain on the opposing surfaces of the rotator 10 or the dispersion plate 25 after the substrate W is unloaded, the droplets D are removed by blowing gas A from the blowing unit 91 of the removal unit 90, as shown in FIG. Alternatively, the removal unit 90 may rotate the rotor 10 instead of using the blowing unit 91 that blows out the gas A, thereby removing the droplets D by the centrifugal force. In this case, the nozzle head 14 is provided to be rotatable. By rotating the nozzle head 14, the distribution plate 25 supported by the nozzle head 14 via the support member 26 can be rotated, and the droplets D remaining on the surface of the distribution plate 25 facing the substrate W can be removed.

[0076] (4) After the removal unit 90 removes the droplets D, the detection unit 80 may detect the droplets D again. If the droplets D are detected, the removal unit 90 may remove the droplets D again. Alternatively, the removal unit 90 may always remove the droplets D after cleaning the substrate W, without detecting the droplets D using the detection unit 80.

[0077] (5) When a detection unit such as an image sensor for detecting the frozen state of the processing liquid L1 on the processing surface of the substrate W is provided, the detection unit such as the image sensor can also be used as a detection unit for detecting the droplets D.

[0078] (6) The droplet D detection unit 80 can detect the state of the processing liquid L1 supplied to the processing surface of the substrate W, in addition to detecting the droplets D. Furthermore, the control unit 100 can control the flow rate of the cooling gas G supplied by the cooling unit 20 in accordance with the state of the processing liquid L1 detected by the detection unit 80, in addition to controlling the removal of the droplets D by the removal unit 90. That is, by combining the detection and removal control of the droplets D with the detection of the processing liquid L1 and the flow rate control of the cooling gas G as mechanisms necessary for image processing and flow rate control, it is possible to reduce the number of components of the entire substrate processing apparatus 1 and to make the substrate processing apparatus 1 more compact.

[0079] (7) In addition, the object to be processed in the first embodiment is a substrate W having a processing surface with an uneven portion formed thereon, but the present invention is also applicable to a substrate W without an uneven portion formed thereon. In this case, the processing surface of the substrate W may be a surface that requires cleaning. [Explanation of symbols]

[0080] 1. Substrate processing equipment 10 Rotating Body 11 Rotating base 12 Rotation axis 13 Placement section 14 nozzle head 15 Holding part 16 Rotation drive unit 20 Cooling section 21 Cooling gas generator 22 filters 23 Flow control section 24 Cooling nozzle 25 Dispersion plate 25a hole 26 Support member 30 1st liquid supply section 31 Liquid storage section 32 Supply section 33 Flow control section 34 Liquid Nozzle 40 Second liquid supply section 41 Liquid storage section 42 Supply section 43 Flow control section 60 cabinets 61 Cover 62 Partition 63 Outlet 63a Exhaust pipe 63b Discharge pipe 64 Exhaust section 70 Blower 71 Air 80 Detector 81 Sensor unit 82 Moving mechanism 82a Rotation support part 82b Arm part 90 Removal section 91 Outlet 91a Piping 91b nozzle 92 Moving mechanism 92a Rotation support part 92b Arm part 93 Heater 100 control section 110 Mechanism control unit 120 Supply control section 130 Detection control section 140 Judgment section 150 Removal control section A gas D droplet G Cooling gas L1 processing liquid L2 processing liquid W substrate

Claims

1. A rotating body comprising a mounting portion for mounting a substrate having a surface to be processed, wherein the mounting portion is provided such that a space is maintained between the mounting portion and the surface of the substrate opposite to the surface to be processed, A rotational drive unit that rotates the aforementioned rotating body, A liquid supply unit that supplies liquid to the surface of the substrate to be processed, A cooling unit that supplies cooling gas to the space between the substrate and the aforementioned mounting unit, A removal unit for removing droplets from the surface of the rotating body facing the substrate, A substrate processing apparatus equipped with the following:

2. The substrate processing apparatus according to claim 1, wherein the removal unit removes the droplets while the substrate is not placed on the placement unit described above.

3. The detection unit for detecting the aforementioned droplets, A control unit that causes the removal unit to remove the droplet according to the detection result from the detection unit, A substrate processing apparatus according to claim 1, comprising:

4. The substrate processing apparatus according to claim 3, wherein the detection unit detects the droplet when the substrate is not placed on the aforementioned placement unit.

5. In addition to detecting the droplets, the detection unit also detects the state of the liquid supplied to the surface of the substrate to be processed. The substrate processing apparatus according to claim 3, wherein the control unit controls the flow rate of the cooling gas supplied by the cooling unit in accordance with the state of the liquid detected by the detection unit, in addition to controlling the removal of the liquid droplets by the removal unit.

6. The cooling unit is A cooling nozzle capable of supplying the aforementioned cooling gas, A dispersion plate is provided on the cooling gas discharge side of the cooling nozzle, facing the substrate. It has, The substrate processing apparatus according to claim 1, wherein the removal unit removes the droplets from the surface of the dispersion plate facing the substrate.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein the removal unit removes the liquid droplet by discharging gas onto the liquid droplet.

8. The substrate processing apparatus according to claim 7, wherein the temperature of the gas discharged by the removal unit is at or above room temperature.

9. The substrate processing apparatus according to any one of claims 1 to 6, wherein the removal unit removes the droplets by heating them.

10. The substrate processing apparatus according to any one of claims 1 to 5, wherein the removal unit removes the droplets by rotating the rotating body.

11. The substrate processing apparatus according to claim 6, wherein the removal unit removes the droplets by rotating the rotating body and the dispersion plate.

12. Place the substrate on the mounting section. With the substrate in place, rotate the rotating body equipped with the mounting part described above. A liquid is supplied to the surface of the substrate to be processed, which is the surface opposite to the side of the mounting portion described above. In a substrate processing method in which a cooling gas is supplied to the space between the substrate and the aforementioned mounting portion to freeze the liquid supplied to the surface to be processed, A substrate processing method for removing droplets present on the surface of the rotating body facing the substrate.