Three-dimensional dynamic random access memory (3d dram) gate all around (GAA) design using stacked si / sige

Abstract

To provide a method for forming a three-dimensional memory structure with scalable dimensions that allow high memory densities.SOLUTION: A method of forming at least one wordline feature in a first stack comprising a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers includes: vertically etching a first pattern of holes; filling the first pattern of holes with a silicon germanium fill; vertically etching a plurality of isolation slots through the first stack; filling the plurality of isolation slots with a dielectric material to form an isolation layer between the silicon germanium fill; etching the silicon germanium fill and the plurality of c-SiGe layers to form a plurality of gate silicon channels comprising portions of the plurality of c-Si layers; and depositing a layer of conductive material that wraps around the plurality of gate silicon channels.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] FIELD Embodiments of the present principles relate generally to semiconductor manufacturing. [Background technology]

[0002] Data storage and retrieval have become limiting factors for many aspects of the computing industry. Memory devices can easily degrade the overall performance of modern computing devices. To increase memory speed, memory structures have been shrunk to extremely small sizes, dramatically increasing the density of memory structures. Two-dimensional memory structures are beginning to reach their theoretical limits with respect to memory structure density. The inventors have observed that three-dimensional memory structures can be used to further increase memory density. However, three-dimensional memory devices require significant changes in structure and processing compared to two-dimensional memory devices.

[0003] Thus, the inventors have provided methods and structures for three-dimensional memories with scalable dimensions that enable memory densities beyond the capabilities of current technology. Summary of the Invention

[0004] A method for forming a three-dimensional dynamic random access memory (3D DRAM) structure is provided herein. In some embodiments, a method of forming a three-dimensional dynamic random access memory (3D DRAM) includes forming at least one word line feature in a first stack including a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers, the word line feature including: etching a first hole pattern vertically through the first stack; filling the first hole pattern with a silicon germanium fill having a germanium concentration similar to a germanium concentration of the plurality of c-SiGe layers; etching a plurality of isolation slots vertically through the first stack to separate the silicon germanium fill in each of the first hole pattern; filling the plurality of isolation slots with a dielectric material to form an insulating layer between the silicon germanium fills; etching the silicon germanium fill and the plurality of c-SiGe layers to form a plurality of gate silicon channels including portions of the plurality of c-Si layers; and depositing a layer of conductive material covering peripheries of the plurality of gate silicon channels.

[0005] In some embodiments, a method of forming a three-dimensional dynamic random access memory (3D DRAM) structure includes forming word line features in a first stack including a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers, the word line features comprising: vertically etching a first hole pattern through the first stack; filling the first hole pattern with a silicon germanium fill having a germanium concentration similar to a germanium concentration in the plurality of c-SiGe layers; vertically etching a plurality of isolation slots through the first stack and filling each of the first hole pattern with a silicon germanium fill. forming word line features, including dividing the article; filling the plurality of isolation slots with a dielectric material to form an insulating layer between the silicon germanium fillings; etching the silicon germanium fillings and the plurality of c-SiGe layers to form a plurality of gate silicon channels comprising portions of the plurality of c-Si layers; depositing a layer of conductive material covering peripheries of the plurality of gate silicon channels; forming bit line features through a first stack extending between rows of the first hole pattern; and forming a plurality of capacitor features in the first stack.

[0006] In some embodiments, a three-dimensional dynamic random access memory (3D DRAM) structure includes at least one vertical word line feature of the 3D DRAM structure formed in a first stack of alternating crystalline silicon (c-Si) layers and nitride layers, the at least one vertical word line feature including a plurality of gate silicon channels comprising the plurality of c-Si layers of alternating c-Si layers, an oxide layer coated around each of the plurality of gate silicon channels, and a metal layer coated around the oxide layer to form a gate-all-around (GAA) structure; at least one horizontal bit line feature disposed orthogonally to the at least one vertical word line feature; and a plurality of capacitor features extending horizontally from the at least one vertical word line between the nitride layers.

[0007] Other further embodiments of the present disclosure are described below.

[0008] Embodiments of the present disclosure, briefly summarized above and described in more detail below, can be understood by reference to exemplary embodiments thereof as illustrated in the accompanying drawings, which illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting in scope, as the present disclosure admits of other equally effective embodiments. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a flowchart of a method for forming a three-dimensional dynamic random access memory (3D DRAM) structure in accordance with at least some embodiments of the present disclosure. [Figure 2A] FIG. 1B is an isometric view of a first stack having a lithography stack with word line hole patterning, in accordance with at least some embodiments of the present disclosure. [Figure 2B] FIG. 10 illustrates an isometric view of a first stack after word line hole formation, in accordance with at least some embodiments of the present disclosure. [Figure 2C] FIG. 10 is an isometric view of a first stack after gapfill of wordline hole formation, in accordance with at least some embodiments of the present disclosure. [Figure 2D] FIG. 1B is an isometric view of a first stack having a lithographic stack with isolation slot patterning, according to at least some embodiments of the present disclosure. [Figure 2E] FIG. 10 is an isometric view of a first stack after separation slot formation, according to at least some embodiments of the present disclosure. [Figure 2F] FIG. 10 is an isometric view of a first stack after filling gaps in separation slots, according to at least some embodiments of the present disclosure. [Figure 3A] FIG. 1B is an isometric view of a first stack having a lithography stack with bit line slit patterning, according to at least some embodiments of the present disclosure. [Figure 3B]FIG. 10 is an isometric view of a first stack after bit line slit formation, according to at least some embodiments of the present disclosure. [Figure 3C] FIG. 10 illustrates an isometric view of a first stack after a bitline slit lateral etch, according to at least some embodiments of the present disclosure. [Figure 3D] FIG. 1C is an isometric view of the first stack after depositing a nitride layer in recesses formed by lateral etching of the bitline slits and sacrificial filling in the bitline slits, according to at least some embodiments of the present disclosure. [Figure 4A] FIG. 1C is an isometric view of a first stack having a hard mask with capacitor slit patterning, according to at least some embodiments of the present disclosure. [Figure 4B] FIG. 10 is an isometric view of a first stack after capacitor slit formation, according to at least some embodiments of the present disclosure. [Figure 4C] FIG. 10 is an isometric view of a first stack after a capacitor slit lateral etch, according to at least some embodiments of the present disclosure. [Figure 4D] 1A is an isometric view of a first stack after sacrificial filling in the capacitor slit and recesses formed by lateral etching of the capacitor slit, according to at least some embodiments of the present disclosure. FIG. [Figure 5A] FIG. 10 is an isometric view of the first stack after performing SiGe vertical and lateral etching of the word line replacement, in accordance with at least some embodiments of the present disclosure. [Figure 5B] FIG. 10 is an isometric view of the first stack after performing a Si thinning etch for word line replacement, according to at least some embodiments of the present disclosure. [Figure 5C] FIG. 10 is an isometric view of the first stack after depositing a conductive layer into the recesses formed by the lateral and vertical etching of the word line replacements. [Figure 6A] FIG. 10 is an isometric view of a first stack after performing vertical etching of capacitor slits, according to at least some embodiments of the present disclosure. [Figure 6B]FIG. 10 is an isometric view of a first stack after performing lateral etching from the capacitor slits for capacitor replacement, according to at least some embodiments of the present disclosure. [Figure 6C] FIG. 10 is an isometric view of a first stack after performing a drain doping process, according to at least some embodiments of the present disclosure. [Figure 6D] FIG. 10 is an isometric view of a first stack after performing capacitor filling and capacitor gap filling processes, according to at least some embodiments of the present disclosure. [Figure 7A] FIG. 1C illustrates an isometric view of a first stack having a hard mask with bit line slits, in accordance with at least some embodiments of the present disclosure. [Figure 7B] FIG. 1C illustrates an isometric view of a first stack after a vertical bit line slit etch process, according to at least some embodiments of the present disclosure. [Figure 7C] FIG. 1C illustrates an isometric view of a first stack having a bitline slit lateral etchback process, in accordance with at least some embodiments of the present disclosure. [Figure 7D] FIG. 1B is an isometric view of a first stack having bit line source doping, according to at least some embodiments of the present disclosure. [Figure 7E] FIG. 1B illustrates an isometric view of a first stack with bitline metal deposition, in accordance with at least some embodiments of the present disclosure. [Figure 7F] FIG. 1B is an isometric view of a first stack with gap filling of bitline slits, in accordance with at least some embodiments of the present disclosure. [Figure 8] 1 is an isometric cross-sectional view of a portion of a three-dimensional dynamic random access memory (3D DRAM) structure in accordance with at least some embodiments of the present disclosure. DETAILED DESCRIPTION OF THE INVENTION

[0010] For ease of understanding, the same reference numerals have been used, where possible, to indicate identical elements common to each figure. The figures are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated in other embodiments without further elaboration.

[0011] The methods and structures provided herein enable the fabrication of three-dimensional (3D) dynamic random-access memory (DRAM) cells that include a gate-all-around (GAA) structure around a crystalline silicon (c-Si) channel to adequately control the c-Si channel. Scaling two-dimensional (2D) DRAMs has become extremely difficult to fabricate and costs continue to rise. Below the D1d DRAM node, feature sizes become so small that even self-aligned quadruple patterning (SAQP) is no longer a viable option. Even if extreme ultraviolet (EUV) lithography is employed, EUV lithography must be at least self-aligned double patterning (SADP), if not SAQP, at most levels. While 3D DRAM is a concept being widely explored in the DRAM industry for D1d and beyond, proposed solutions cannot address the dimensions required for reaching memory densities comparable to 2D DRAM with economical materials and processing.

[0012] FIG. 1 illustrates a flowchart of a method for forming a three-dimensional dynamic random access memory (3D DRAM) structure according to at least some embodiments of the present disclosure. At 102, wordline features are formed in a first stack including multiple crystalline silicon (c-Si) layers alternating with multiple crystalline silicon germanium (c-SiGe) layers to form a structure for a 3D DRAM. The first stack may be formed by forming a first c-Si layer, followed by a first c-SiGe layer. This process is repeated with a second c-Si layer, followed by a second c-SiGe layer. Similarly, the layers alternate to form as many layers as needed for a particular structure, allowing for great flexibility in memory structure design. For example, the first stack may include 50 or more layers. In some embodiments, the germanium concentration in the c-SiGe layer may be about 10 to about 35 atomic percent.

[0013] 2A shows an isometric view of a first stack 202 having a lithographic stack 204 disposed thereon with a wordline hole pattern 212, according to at least some embodiments of the present disclosure. The first stack 202 represents a portion of an overall 3D DRAM structure that may be extended / replicated in the length and width directions to form the overall 3D DRAM structure. In some embodiments, the first stack 202 includes a base c-Si layer 202A with alternating c-Si layers 202B and c-SiGe layers 202C disposed on the base c-Si layer 202A. In some embodiments, the base c-Si layer 202A has a thickness greater than the c-SiGe layer 202C. In some embodiments, the first stack 202 includes an upper c-SiGe layer 202D corresponding to the upper portion of the first stack 202. In some embodiments, the upper c-SiGe layer 202D has a thickness greater than the c-SiGe layer 202C. In some embodiments, c-Si layer 202B of first stack 202 may have a thickness of about 20 to about 60 nm. In some embodiments, c-SiGe layer 202C of first stack 202 may have a thickness of about 5 nm to about 20 nm. In some embodiments, c-Si layer 202B may have a thickness of about 50 nm and c-SiGe layer 202C may have a thickness of about 10 nm. The thicknesses may vary based on the design of the particular memory structure.

[0014] In some embodiments, the first stack is deposited on a substrate using a heteroepitaxy process. The substrate may include layers of c-Si or other suitable materials. By using alternating heteroepitaxy of silicon and silicon germanium, many memory cell layers may be constructed cost-effectively and easily. Various etching and filling processes may be performed on the first stack to form 3D DRAM features such as word lines, bit lines, and capacitors. In some embodiments, the word lines are vertical word lines and the bit lines are horizontal bit lines.

[0015] In 102A, forming the wordline features includes vertically etching a first hole pattern 214 through the first stack 202, e.g., etching the wordline hole pattern 212. Through the first stack 202 refers to at least the upper c-SiGe layer 202D, the alternating c-Si layers 202B and 202C, and, e.g., about 50 nm into the base c-Si layer 202A, at least partially through the base c-Si layer 202A. Etching vertically refers to etching in a direction approximately perpendicular to the horizontal plane of the layers of the first stack 202. The lithography stack 204 may include one or more layers of material suitable for performing an etching process on the first stack 202. For example, the lithography stack 204 may include a hard mask 210 disposed on an oxide mask 208 disposed on a carbon mask 206. 2B shows an isometric view of the first stack 202 after wordline hole formation, according to at least some embodiments of the present disclosure. The vertical etch of the first pattern of holes 214 may be a non-selective etch that etches both c-Si and c-SiGe. The wordline hole pattern 212 may be any suitable pattern and may include, for example, a plurality of circles, rectangles, squares, or any other suitable shape.

[0016] In 102B, forming the wordline features further includes filling the first pattern of holes 214 with a silicon germanium (SiGe) fill (e.g., SiGe fill 216) having a concentration of germanium similar to the concentration of germanium in the plurality of c-SiGe layers. For example, in some embodiments, the concentration of germanium in the SiGe fill may be within about 10 percent of the concentration of germanium in the c-SiGe layer 202C. FIG. 2C shows an isometric view of the first stack 202 after wordline hole formation and gap-filling with SiGe fill 216, according to at least some embodiments of the present disclosure. In some embodiments, the SiGe fill 216 is deposited by a chemical vapor deposition (CVD) process. In some embodiments, the SiGe fill 216 comprises an amorphous SiGe fill.

[0017] In 102C, forming the wordline feature further includes vertically etching a plurality of isolation slots (e.g., isolation slots 226) through the first stack and the SiGe fill, dividing the silicon germanium fill at each of the first hole patterns. The similar germanium concentrations in the c-SiGe layer 202C and the SiGe fill 216 advantageously facilitate more uniform etching of the plurality of isolation slots. FIG. 2D shows an isometric view of the first stack 202 having a lithography stack 220 with an isolation slot pattern 218, according to at least some embodiments of the present disclosure. The lithography stack 220 may include similar layers as the lithography stack 204. For example, the lithography stack 220 may include a hard mask 220C disposed on an oxide mask 220B disposed on a carbon mask 220A. 2D, the isolated slot pattern 218 has a length 222 that is greater than the length of the wordline hole pattern 212 and a width 224 that is less than the width of the wordline hole pattern 212. In some embodiments, the isolated slots 226 and the first hole pattern 214 are substantially coplanar along one of their sides.

[0018] 2E shows an isometric view of the first stack after isolation slot formation, according to at least some embodiments of the present disclosure. The vertical etching of the isolation slots 226 through the isolation slot pattern 218 may be a non-selective etch that etches both c-Si and c-SiGe. The isolation slots 226 are sized to separate the SiGe fill 216 for further downstream processing to form wordline features. In some embodiments, the isolation slots 226 extend into the first stack 202 to a depth similar to that of the first hole pattern 214. In other words, the isolation slots 226 and the first hole pattern 214 may be etched to similar amounts.

[0019] In 102D, forming the word line features further includes filling the isolation slots with a dielectric material to form an insulating layer (e.g., insulating layer 228) between the silicon germanium fills. FIG. 2F shows an isometric view of first stack 202 after gap filling isolation slots 226 with insulating layer 228, according to at least some embodiments of the present disclosure. Insulating layer 228 may consist essentially of a dielectric material. In some embodiments, insulating layer 228 consists of silicon oxide, silicon nitride, or silicon glass.

[0020] In some embodiments, at 104, the method 100 includes forming bitline features through a first stack extending between rows of the first hole pattern. FIG. 3A illustrates an isometric view of a first stack 202 having a lithography stack with a bitline slit pattern, according to at least some embodiments of the present disclosure. While the first stack 202 is shown with a single bitline slit 304, the 3D DRAM structure may have multiple bitline slits as the first stack structure repeats / expands in the width direction to form the overall 3D DRAM structure. In some embodiments, the bitline features are horizontal bitline features. In some embodiments, forming the bitline features includes disposing a lithography stack 302 having the bitline slit 304 on the first stack 202, and the lithography stack 302 may include similar layers as the lithography stack 204. For example, the lithography stack 302 may include a hard mask 302C disposed on an oxide mask 302B disposed on a carbon mask 302A. Forming the bit line features further includes etching bit line slits 306 through the first stack 202, as shown in Figure 3B. Figure 3B shows an isometric view of the first stack 202 after bit line slit formation, according to at least some embodiments of the present disclosure. In some embodiments, portions of the lithography stack 204, such as portions of the carbon mask 302A, may be left in place until downstream processing after bit line slit formation.

[0021] In some embodiments, forming the bitline features further includes replacing the c-SiGe layer 202C, which may be conductive, adjacent the bitline slits 306 with an insulating material. In some embodiments, replacing the c-SiGe layer 202C adjacent the bitline slits 306 begins with lateral etching of the c-SiGe layer 202C from the bitline slits 306 to form recesses 308 for insulating layers (see bitline insulating layer 310 in FIG. 3D ) of the 3D DRAM structure. The recesses 308 may be formed by using a selective removal process (SRP) that selectively removes only SiGe. A carbon mask 302A may be used to protect the upper c-SiGe layer 202D from the SRP of SiGe. The selective removal process can be adjusted to precisely control the amount of lateral etching. Lateral etching refers to etching in a direction substantially parallel to the c-SiGe layer 202C. 3C shows an isometric view of the first stack 202 after a bitline slit lateral etch, in accordance with at least some embodiments of the present disclosure. In some embodiments, the c-SiGe layer 202C is etched laterally from the bitline slit 306 to a location adjacent the SiGe fill 216.

[0022] In some embodiments, forming the bitline features further includes depositing a bitline insulating layer 310 in the recesses 308 formed by the bitline lateral etching. The bitline insulating layer 310 comprises a dielectric material and replaces the laterally etched c-SiGe layer 202C proximate to the bitline slits 306. In some embodiments, the bitline insulating layer 310 is a nitride layer, such as titanium nitride (TiN). In some embodiments, the bitline insulating layer 310 is deposited via an atomic layer deposition (ALD) process. In some embodiments, forming the bitline features further includes depositing a sacrificial fill 312 in the bitline slits 306. FIG. 3D shows an isometric view of the first stack 202 after depositing the bitline insulating layer 310 in the recesses 308 and providing the sacrificial fill 312 in the bitline slits 306, in accordance with at least some embodiments of the present disclosure. The bitline insulating layer 310 provides a skeletal backbone to support the bitline features formed in the 3D DRAM. The sacrificial fill 312 may consist essentially of a dielectric material, hi some embodiments, the sacrificial fill 312 consists of silicon oxide, silicon nitride, or silicon glass.

[0023] In some embodiments, at 106, the method 100 includes forming a plurality of capacitor features in the first stack 202. Forming the plurality of capacitor features in the first stack 202 may begin by placing one or more masks 404 having capacitor slit patterning 406 on the first stack 202, as shown in FIG. 4A. Formation of the plurality of capacitor features continues by then etching capacitor slits 408 through the first stack 202, as shown in FIG. 4B. In some embodiments, the capacitor slits 408 are etched by a non-selective etch, similar to the formation of the bit line slits 306. In some embodiments, the capacitor slits 408 are formed after depositing a sacrificial fill 312 in the bit line slits 306.

[0024] Next, in some embodiments, forming the plurality of capacitor features includes performing a lateral etch of the plurality of c-SiGe layers 202C from the capacitor slits 408 to form recesses 410 for insulating layers (see capacitor insulating layer 412 in FIG. 4D ) of the 3D DRAM structure. The lateral etch is performed by an SRP process, which selectively removes only the c-SiGe and not the c-Si. FIG. 4C shows an isometric view of the first stack 202 after the capacitor slit lateral etch, according to at least some embodiments of the present disclosure. In some embodiments, the c-SiGe layers 202C are etched back from the capacitor slits 408 to the SiGe fill 216.

[0025] In some embodiments, forming the capacitor features further includes depositing a capacitor insulating layer 412 in the recesses 410 formed after lateral etching of the c-SiGe layer from the capacitor slits 408. The capacitor insulating layer 412 comprises a dielectric material that fills the recesses 410. In some embodiments, the capacitor insulating layer 412 is an oxide layer or a nitride layer, such as aluminum oxide (AlO) or titanium nitride (TiN). In some embodiments, the capacitor insulating layer 412 is deposited via an atomic layer deposition (ALD) process. In some embodiments, forming the capacitor features further includes depositing a sacrificial fill 414 in each capacitor slit 408. FIG. 4D shows an isometric view of the first stack 202 after depositing the capacitor insulating layer 412 in the recesses 410 and providing the sacrificial fill 414 in the capacitor slits 408, in accordance with at least some embodiments of the present disclosure. The capacitor insulating layer 412 provides a skeletal backbone to support the capacitor features formed in the 3D DRAM. The sacrificial fill 414 may consist essentially of a dielectric material. In some embodiments, the sacrificial fill 414 is made of silicon oxide, silicon nitride, or silicon glass. A planarization process may be performed after the deposition of the sacrificial fill 414.

[0026] Referring back to 102, in some embodiments, forming wordline features in the first stack 202 at 102E further includes etching the SiGe fill 216 and the c-SiGe layer 202C between the bitline insulating layer 310 and the capacitor insulating layer 412. FIG. 5A shows an isometric view of the first stack 202 after performing SiGe vertical and lateral etching of the wordline replacement portions, according to at least some embodiments of the present disclosure. The vertical and lateral etching forms vertical recesses 508 and horizontal recesses 510 around the plurality of gate silicon channels 504 (i.e., recesses covering the periphery of each of the gate silicon channels 504 to lay the foundation for a gate-area structure). In some embodiments, the plurality of gate silicon channels 504 includes portions of the plurality of c-Si layers 202B horizontally disposed between the bitline insulating layer 310 and the capacitor insulating layer 412. In some embodiments, the SiGe fill 216 and the c-SiGe layer 202C are etched via an SRP process to selectively remove only the SiGe. In some embodiments, after etching the SiGe fill 216 and the c-SiGe layer 202C between the bitline insulating layer 310 and the capacitor insulating layer 412, all of the SiGe (from both the SiGe fill 216 and the c-SiGe layer 202C) is removed from the first stack 202.

[0027] In some embodiments, after etching the SiGe fill 216 and the c-SiGe layer 202C, the c-Si layer comprising the plurality of gate silicon channels 504 can be etched to widen the gap between the c-Si layers, as shown in FIG. 5B. FIG. 5B illustrates an isometric view of the first stack 202 after performing a thinning-Si etch for word line replacement, according to at least some embodiments of the present disclosure. The etch can be an SRP process that selectively removes about 3 to about 8 nm of c-Si. In some embodiments, the etch is a lateral etch such that the horizontal recess 510 is widened to the horizontal recess 510A.

[0028] In 102F, forming the word line features includes depositing a conductive layer 520 that covers the periphery of the plurality of gate silicon channels to form a GAA structure of the 3D DRAM. FIG. 5C shows an isometric view of the first stack 202 after depositing the conductive layer 520 within the horizontal recesses 510 or 510A and vertical recesses 508 formed by the SiGe lateral and vertical etching of the word line replacement portions. In some embodiments, an outer layer 550 is disposed around the conductive layer 520. In some embodiments, the outer layer 550 includes a gate dielectric layer 522 that is deposited within the horizontal recesses 510 or 510A and vertical recesses 508 before depositing the conductive layer 520. In some embodiments, the outer layer 550 includes a liner layer 524 that is deposited between the gate dielectric layer 522 and the conductive layer 520. In some embodiments, the liner layer 524 is disposed between the gate dielectric layer 522 and the conductive layer 520. The conductive layer 520 includes any suitable metal, such as tungsten. The gate dielectric layer 522 may include an oxide layer, such as silicon oxide. The liner layer 524 may include a nitride layer, such as titanium nitride (TiN). One or more of the conductive layer 520, the gate dielectric layer 522, or the liner layer 524 may be deposited via a suitable CVD or ALD process.

[0029] Referring back to 106, in some embodiments, forming the plurality of capacitor features includes performing a lateral etch of the plurality of c-Si layers 202B from the capacitor slits 408 to expose source / drain doped regions (e.g., source / drain doped regions 602) of the 3D DRAM structure. In some embodiments, the lateral etch is performed on both sides of the capacitor slits 408. Prior to the lateral etch of the plurality of c-Si layers 202B, a hard mask may be placed on the first stack 202, and a vertical etch may be performed to etch the sacrificial fill 414 to expose the c-Si layer adjacent to the capacitor slits 408. FIG. 6A shows an isometric view of the first stack 202 after performing a vertical etch of the capacitor slits 408, according to at least some embodiments of the present disclosure. In some embodiments, a partial sacrificial fill 414′ may be left behind to protect the base c-Si layer 202A from unwanted etching. The partial sacrificial fill 414' generally extends to or below the bottom capacitor insulating layer 412A such that the partial sacrificial fill 414' does not cover any of the c-Si layer 202B adjacent to the capacitor slit 408.

[0030] FIG. 6B illustrates an isometric view of the first stack 202 after performing a lateral etch from the capacitor slit 408 to form a capacitor replacement recess 606, according to at least some embodiments of the present disclosure. In some embodiments, the lateral etch is an SRP process for selectively removing c-Si. The lateral etch can be configured to remove about 300 to about 800 nm of c-Si to expose the source / drain doped regions 602. FIG. 6C illustrates an isometric view of the first stack 202 after performing a drain doping process, according to at least some embodiments of the present disclosure. After the drain doping process, the first stack 202 includes a drain 610 disposed between each of the multiple gate silicon channels 504 and a corresponding one of the recesses 606 disposed on a common horizontal plane. The drain doping process may include doping by selective epitaxy, plasma doping, etc. The drain doping process may include doping the c-Si with any suitable material, such as phosphorus. In some embodiments, a silicide layer 630 may be formed adjacent to the drain 610. In some embodiments, the silicide layer 630 is formed by a selective reaction. In some embodiments, the silicide layer 630 consists essentially of titanium silicide (TiSi).

[0031] After the drain doping process, forming the capacitor feature includes depositing a metal electrode layer (e.g., metal electrode layer 616) in at least a portion of the area where the multiple c-Si layers are laterally etched from the capacitor slits (i.e., at least a portion of recess 606). Metal electrode layer 616 may comprise any suitable conductive material. In some embodiments, the capacitor feature comprises a stack of alternating layers of capacitor insulating layers 412 and metal electrode layers 616.

[0032] In some embodiments, the metal electrode layer 616 is formed by depositing a first metal layer 632. In some embodiments, the metal electrode layer 616 includes a first dielectric layer 634 deposited on the first metal layer 632. In some embodiments, the metal electrode layer 616 includes a second metal layer 638 deposited on the first dielectric layer 634 (see also FIG. 9 ). In some embodiments, the second metal layer 638 may include a thin metal layer and a gap fill material having low stress that facilitates expansion and stress relief of the second metal layer 638. For example, the gap fill material may be boron-doped SiGe, etc.

[0033] In some embodiments, after filling recesses 606, capacitor slits 408 are filled with sacrificial fill 614. In some embodiments, sacrificial fill 614 comprises a material similar to sacrificial fill 414. Figure 6D shows an isometric view of first stack 202 after performing capacitor recess fill and sacrificial fill processes according to at least some embodiments of the present disclosure.

[0034] Referring back to 104, in some embodiments, forming the bitline features further includes performing a lateral etch of the plurality of c-Si layers 202B from the bitline slits 306 to expose source / drain doped regions (e.g., source / drain doped regions 708) of the 3D DRAM structure. In some embodiments, the lateral etch is performed on both sides of the bitline slits 306. Before performing the lateral etch, a vertical etch of the sacrificial fill 312 is performed to at least partially remove the sacrificial fill 312 and expose the c-Si layers 202B from the bitline slits 306. FIG. 7A shows an isometric view of the first stack 202 with a hard mask 704 having bitline slits 706, in accordance with at least some embodiments of the present disclosure. The bitline slits 706 expose the sacrificial fill 312. FIG. 7B shows an isometric view of the first stack 202 after the vertical bitline slit etch process, in accordance with at least some embodiments of the present disclosure. A partial sacrificial fill 312' may be left to protect the base c-Si layer 202A. Figure 7C shows an isometric view of the first stack 202 with a bitline slit lateral etchback process according to at least some embodiments of the present disclosure. The bitline slit lateral etchback forms recesses 712 between the bitline insulating layers 310 that expose the source / drain doped regions 708. In some embodiments, the bitline slit lateral etch includes selectively removing about 30 to about 80 nm of c-Si laterally from the bitline slits 306.

[0035] 7D shows an isometric view of the first stack 202 with bit line source doping, according to at least some embodiments of the present disclosure. After the source doping process, the first stack 202 includes a source 714 disposed between each of the plurality of gate silicon channels 504 and a corresponding one of the recesses 712 disposed on the common horizontal surface. The source doping process may include doping by selective epitaxy, plasma doping, etc. The source doping process may include doping c-Si with any suitable material, such as phosphorus. In some embodiments, a silicide layer 730 may be formed adjacent to the source 714. In some embodiments, the silicide layer 730 is formed by a selective reaction. In some embodiments, the silicide layer 730 consists essentially of titanium silicide (TiSi).

[0036] Forming the bitline features further includes depositing a metal layer (e.g., bitline metal layer 718) in at least a portion of the area where the multiple c-Si layers are etched laterally from the bitline slits (i.e., depositing the metal layer in at least a portion of the recesses 712). Figure 7E shows an isometric view of the first stack with bitline metal deposition, according to at least some embodiments of the present disclosure. Bitline metal layer 718 may include a material similar to conductive layer 520.

[0037] In some embodiments, after filling recesses 712, bitline slits 306 are filled with a sacrificial fill 726. In some embodiments, sacrificial fill 726 comprises a material similar to sacrificial fill 312. Figure 7F shows an isometric view of first stack 202 with gap filling of bitline slits 306, in accordance with at least some embodiments of the present disclosure. Before or after any of the processing steps disclosed herein, for example, before or after an etching or gap filling process, a planarization process can be performed to smooth any surfaces of first stack 202.

[0038] FIG. 8 illustrates an isometric cross-sectional view of a portion of a three-dimensional dynamic random access memory (3D DRAM) structure 800 in accordance with at least some embodiments of the present disclosure. In some embodiments, the 3D DRAM structure 800 is formed via the processes described above and illustrated in FIGS. 2A through 7F . The 3D DRAM structure 800 includes at least one vertical word line feature 806 of the 3D DRAM structure formed in a first stack 202 of alternating crystalline silicon (c-Si) layers 808 and nitride layers 810. The at least one vertical word line feature 806 extends in a vertical direction 802. The at least one vertical word line feature 806 includes a plurality of gate silicon channels 504 comprising a plurality of c-Si layers 202B, a gate dielectric layer 522 disposed around each of the plurality of gate silicon channels 504, and a conductive layer 520 disposed around the gate dielectric layer 522 to form a gate-all-around (GAA) structure. In some embodiments, the liner layer 524 is disposed between the gate dielectric layer 522 and the conductive layer 520. In some embodiments, the liner layer 524 is formed of a nitride layer and the gate dielectric layer 522 is formed of an oxide layer.

[0039] In some embodiments, at least one horizontal bitline feature 826 extends in a horizontal direction 804 perpendicular to the at least one vertical wordline feature 806. A plurality of capacitor features 816 extend horizontally from the at least one vertical wordline 806 between the capacitor insulating layers 412. In some embodiments, the source 714 is disposed between the at least one vertical wordline and the at least one horizontal bitline, and the drain is disposed between the at least one vertical wordline and the plurality of capacitors. In some embodiments, the at least one horizontal bitline feature 826 comprises multiple alternating layers of bitline metal layers 718 and bitline insulating layers 732. In some embodiments, the plurality of bitline metal layers 718 are vertically self-aligned with the source 714.

[0040] While the forgoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. 1. A method of forming a three-dimensional dynamic random access memory (3D DRAM) structure, comprising: forming at least one word line feature in a first stack including a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers, the word line feature comprising: Etching a first hole pattern vertically through the first stack; filling the first hole pattern with a silicon germanium fill having a germanium concentration similar to a germanium concentration of the plurality of c-SiGe layers; Etching a plurality of isolation slots vertically through the first stack to separate the silicon germanium fill into each of the first hole patterns; filling the plurality of isolation slots with a dielectric material to form an insulating layer between the silicon germanium fills; etching the silicon germanium fill and the plurality of c-SiGe layers to form a plurality of gate silicon channels comprising portions of the plurality of c-Si layers; depositing a layer of conductive material overlying the plurality of gated silicon channels; forming at least one word line feature, A method comprising:

2. 10. The method of claim 1, further comprising forming bit line features through the first stacks extending between rows of the first hole pattern.

3. forming the bit line features, Etching a bitline slit through the first stack; performing lateral etching of the c-Si layers from the bit line slits to expose source / drain doped regions of the 3D DRAM structure; depositing a metal layer in at least a portion of the areas where the plurality of c-Si layers are etched laterally from the bit line slits; The method of claim 2 , comprising:

4. forming the bit line features, depositing a bit line insulating layer in recesses formed by the lateral etching of the plurality of c-SiGe layers; The method of claim 3 further comprising:

5. The method of claim 1 , further comprising forming a plurality of capacitor features in the first stack.

6. forming the plurality of capacitor features; Etching a capacitor slit through the first stack; performing lateral etching of the c-Si layers from the capacitor slits to expose source / drain doped regions of the 3D DRAM structure; depositing a metal electrode layer in at least a portion of the area where the plurality of c-Si layers are etched laterally from the capacitor slits; The method of claim 5 , comprising:

7. forming the plurality of capacitor features; depositing a capacitor insulating layer in the recesses formed by the lateral etching of the plurality of c-SiGe layers; The method of claim 6 further comprising:

8. forming bit line features through the first stacks extending between rows of the first hole pattern; forming a plurality of capacitor features in the first stack; The method of claim 1 further comprising:

9. The method of claim 1 , further comprising depositing the first stack on a substrate using a heteroepitaxy process.

10. 9. The method of claim 1, further comprising depositing a gate dielectric layer around the plurality of gated silicon channels before depositing the layer of conductive material.

11. The method of claim 10 , further comprising depositing a liner layer on the gate dielectric layer before depositing the layer of conductive material.

12. 9. The method of claim 1, wherein the silicon germanium fill comprises amorphous silicon germanium deposited via a chemical vapor deposition (CVD) process.

13. The method of any one of claims 1 to 8, further comprising etching the c-Si layers to increase the gaps between the c-Si layers.

14. The method of any one of claims 1 to 8, wherein the concentration of germanium in the c-SiGe layer can be between about 10 and about 35 atomic percent.

15. 1. A three-dimensional dynamic random access memory (3D DRAM) structure comprising: At least one vertical word line feature of the 3D DRAM structure formed in a first stack of alternating crystalline silicon (c-Si) layers and nitride layers, the at least one vertical word line feature including: a plurality of gate silicon channels comprising the plurality of c-Si layers of the alternating c-Si layers; an oxide layer covered around each of the plurality of gate silicon channels; and a metal layer covered around the oxide layer to form a gate-all-around (GAA) structure; at least one horizontal bit line feature disposed perpendicular to said at least one vertical word line feature; a plurality of capacitor features extending horizontally from the at least one vertical word line between the nitride layers; A three-dimensional dynamic random access memory (3D DRAM) structure comprising:

16. 16. The 3D DRAM structure of claim 15, further comprising a liner disposed between the oxide layer and the metal layer, the liner comprising a nitride layer.

17. 16. The 3D DRAM structure of claim 15, further comprising: a source disposed between the at least one vertical word line and the at least one horizontal bit line; and a drain disposed between the at least one vertical word line and the plurality of capacitor features.

18. 20. The 3D DRAM structure of claim 17, wherein the at least one horizontal bit line comprises multiple alternating layers of bit line metal layers and nitride layers, a plurality of the bit line metal layers being vertically self-aligned to the source.

19. 19. The 3D DRAM structure of claim 15, wherein the metal layer consists essentially of tungsten.

20. 19. The 3D DRAM structure of claim 15, further comprising a sacrificial fill disposed between the plurality of gate silicon channels.

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