Plasma processing equipment and method for operating plasma processing equipment
JP2025167861APending Publication Date: 2025-11-07TOKYO ELECTRON LTD
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Patent Information
- Application Number
- JP2024072836
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-04-26
- Publication Date
- 2025-11-07
AI Technical Summary
Technical Problem
Existing plasma processing apparatuses do not effectively utilize waste heat for power generation.
Method used
Incorporation of a Stirling engine to convert waste heat into electrical energy using a heat medium flow path, integrated with a plasma processing apparatus to generate plasma and power.
Benefits of technology
Derives power from waste heat, enhancing energy efficiency and providing additional functionality to the plasma processing apparatus.
✦ Generated by Eureka AI based on patent content.
Smart Images
Figure 2025167861000001_ABST
Abstract
To provide technique for obtaining electric power from waste heat of plasma processing equipment.SOLUTION: Plasma processing equipment includes a chamber, a substrate support part, an upper electrode, a plasma generation part, and an electric power generation part. The substrate support part includes a lower electrode. The upper electrode is disposed above the substrate support part. The upper electrode provides a first flow path. The first flow path includes an inlet and an outlet. A heating medium is supplied to the inlet. The outlet discharges the heating medium. The plasma generation part is configured in such a manner that it generates plasma in the processing space and between the upper electrode and the substrate support part. The electric power generation part includes a Stirling engine. The Stirling engine is configured to use the heating medium as its heat source. The Stirling engine provides a second flow path. The second flow path includes an inlet. The inlet is connected to the outlet of the first flow path.SELECTED DRAWING: Figure 2
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Citation Information
Patent Citations
Method and device for manufacturing semiconductor
JP2001085351A