Battery
JP2025168398APending Publication Date: 2025-11-07SEMICON ENERGY LAB CO LTD
Patent Information
- Application Number
- JP2025138341
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2014-08-08
- Filing Date
- 2025-08-21
- Publication Date
- 2025-11-07
Smart Images
Figure 2025168398000001_ABST
Abstract
To provide a semiconductor device in which a circuit and a storage element are efficiently accommodated.SOLUTION: A semiconductor device includes a first transistor, a second transistor, and an electric double layer capacitor. The first transistor, the second transistor, and the electric double layer capacitor are provided on one substrate. A semiconductor forming the channel region of the second transistor is wider in forbidden band width than a semiconductor forming the channel region of the first transistor. An electric double layer capacitor has a solid electrolyte.SELECTED DRAWING: Figure 2
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Citation Information
Patent Citations
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