Power conversion module and power conversion device

Abstract

To provide a power conversion module and power conversion device capable of downsizing the physical size.SOLUTION: A conversion module 20 comprises circuit units 201 and 202, and sensor sections 131 and 132. The circuit unit 201 includes semiconductor elements 61H and 61L, O-wiring 516, and first sensor section 131. The circuit unit 202 includes semiconductor elements 62H and 62L, O-wiring 526, and a second sensor section 132. The first sensor section 131 is provided on the O-wiring 516. In the first sensor section 131, a shunt resistor section 141 is included in the O-wiring 516. The second sensor section 132 is provided on the O-wiring 526. In the second sensor section 132, the shunt resistor section 141 is included in the O-wiring 526. Semiconductor elements 61H, 61L, 62H, 62L, and shunt resistor section 141 are arranged on one surface of the cooler.SELECTED DRAWING: Figure 8

Description

[Technical Field]

[0001] The disclosure herein relates to a power conversion module and a power conversion device. [Background technology]

[0002] Patent Document 1 discloses a power conversion module and a power conversion device including a first inverter connected to one end of a winding of a rotating electric machine and a second inverter connected to the other end of the winding. A current sensor is provided in the connection path connecting the first inverter and the winding. One current sensor is provided for each of the three-phase connection paths. The contents of the prior art documents are incorporated by reference as explanations of the technical elements in this specification. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-177342 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in Patent Document 1, there is a concern that the provision of the current sensor increases the size of the power conversion module and the power conversion device. From the above-mentioned viewpoints and other viewpoints not mentioned, further improvements are required in the power conversion module and the power conversion device.

[0005] One disclosed object is to provide a power conversion module and a power conversion device that can be made smaller in size. [Means for solving the problem]

[0006] The first disclosed aspect comprises: A power conversion module (20) that converts power supplied to a rotating electric machine (3), first semiconductor elements (61H, 61L) constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via output paths (13, 14); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via an output path; an output conductor portion (115, 116, 516, 526) forming at least a part of an output path; a shunt resistor portion (141) included in the output conductor portion and forming a shunt resistor for detecting a current flowing through the output conductor portion; a support member (30) having one surface (301); Equipped with The first semiconductor element, the second semiconductor element, and the shunt resistor unit are arranged on a common surface, forming a power conversion module.

[0007] According to the first aspect, the shunt resistor portion forming the shunt resistor is included in the output conductor portion. With this configuration, there is no need to provide a dedicated element for detecting current in the output conductor portion. Furthermore, the first semiconductor element, the second semiconductor element, and the shunt resistor portion are arranged on one surface of the support member. With this configuration, there is no need to provide a dedicated component for supporting the shunt resistor portion in the power conversion module. Therefore, the size of the power conversion module can be reduced.

[0008] A second disclosed aspect is A power conversion module (20) that converts power supplied to a rotating electric machine (3), first semiconductor elements (61H, 61L) constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via output paths (13, 14); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via an output path; an output conductor portion (115, 116, 516, 526) forming at least a part of an output path; a current detection unit (130) that detects a current flowing in the output conductor portion; a support member (30) having one surface (301); Equipped with The first semiconductor element, the second semiconductor element, and the current detection unit are arranged on a common surface, forming a power conversion module.

[0009] According to the second aspect, the first semiconductor element, the second semiconductor element, and the shunt resistor are arranged on one surface of the support member, which allows the size of the power conversion module to be reduced, similar to the first aspect.

[0010] A third disclosed aspect comprises: A power conversion device (18) including a power conversion module (20) for converting power supplied to a rotating electric machine (3) by the power conversion module, a first semiconductor element (61H, 61L) included in the power conversion module and constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via an output path (13, 14); second semiconductor elements (62H, 62L) included in the power conversion module and constituting a second inverter (9) connected to the other end of the winding via an output path; an output conductor portion (115, 116, 516, 526) forming at least a part of an output path; a shunt resistor portion (141) included in the output conductor portion and forming a shunt resistor for detecting a current flowing through the output path; The power conversion device is provided with:

[0011] According to the third aspect, the shunt resistor portion forming the shunt resistor is included in the output conductor portion, and therefore, similar to the first aspect, the size of the power conversion module can be reduced.

[0012] The various aspects disclosed in this specification employ different technical means to achieve their respective objectives. The reference numerals in parentheses in the claims and in this section are intended to exemplify correspondences with the following embodiments and are not intended to limit the technical scope. The objectives, features, and advantages disclosed in this specification will become more apparent by reference to the following detailed description and the accompanying drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 is a diagram illustrating a power conversion circuit and a drive system according to a first embodiment. [Figure 2] FIG. 4 is a diagram showing an example of an operating point map of the rotating electric machine. [Figure 3] FIG. 1 is a diagram showing a star-connected drive. [Figure 4] FIG. 10 is a diagram showing an open connection drive. [Figure 5] FIG. 2 is a circuit diagram showing a state in which an external device is connected. [Figure 6] 1A and 1B are diagrams illustrating a connection structure between a power conversion module and an external device. [Figure 7] FIG. 2 is a plan view showing the power conversion module. [Figure 8] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 9] FIG. 8 is a cross-sectional view taken along line IX-IX in FIG. 7. [Figure 10] FIG. 8 is a cross-sectional view taken along line XX in FIG. [Figure 11] FIG. 8 is a cross-sectional view taken along line XI-XI in FIG. 7, showing a longitudinal cross-sectional view of the shunt resistor portion and its surroundings. [Figure 12] FIG. 10 is a diagram illustrating a reference example. [Figure 13] FIG. 10 is a diagram illustrating a reference example. [Figure 14] FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a modified example. [Figure 15] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 16]FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a modified example. [Figure 17] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 18] FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a second embodiment. [Figure 19] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 20] FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a modified example. [Figure 21] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 22] FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a modified example. [Figure 23] FIG. 2 is a plan view showing the internal structure of the power conversion module. [Figure 24] FIG. 10 is a plan view showing the internal structure of the power conversion module according to the third embodiment. [Figure 25] FIG. 10 is a plan view showing the internal structure of the power conversion module according to the fourth embodiment. [Figure 26] FIG. 2 is a vertical cross-sectional view of the shunt resistor portion and its surroundings. [Figure 27] FIG. 10 is a plan view showing the internal structure of the power conversion module according to the fifth embodiment. [Figure 28] FIG. 2 is a vertical cross-sectional view of the shunt resistor portion and its surroundings. [Figure 29] FIG. 10 is a diagram illustrating a power conversion circuit and a drive system according to a sixth embodiment. [Figure 30] FIG. 2 is a plan view showing the internal structure of the power conversion module. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, several embodiments will be described with reference to the drawings. Note that in each embodiment, corresponding components are designated by the same reference numerals, and redundant description may be omitted. When only a portion of the configuration is described in each embodiment, the configuration of another embodiment previously described may be applied to the remaining portion of the configuration. Furthermore, in addition to the combinations of configurations explicitly stated in the description of each embodiment, configurations of several embodiments may be partially combined together even if not explicitly stated, provided that there is no particular problem with the combination.

[0015] The power conversion module of this embodiment is applied to, for example, a mobile body using a rotating electric machine as a drive source, such as an electric vehicle (BEV), a hybrid electric vehicle (HEV), a plug-in hybrid electric vehicle (PHEV), an aircraft such as an electric vertical take-off and landing aircraft or a drone, a ship, a construction machine, an agricultural machine, etc.

[0016] (First embodiment) First, the schematic configuration of a drive system for a moving body will be described with reference to FIG.

[0017] <Drive systems for moving objects> As shown in FIG. 1, a drive system 1 for a moving body includes a DC power supply 2, a rotating electric machine 3, and a power conversion circuit 4.

[0018] The DC power supply 2 may be, for example, a rechargeable secondary battery such as a lithium ion battery or a nickel-metal hydride battery. The DC power supply 2 may also be one that converts AC power to DC and outputs it. The DC power supply 2 supplies power to the rotating electrical machine 3. The DC power supply 2 corresponds to a power supply unit.

[0019] The rotating electric machine 3 is a three-phase open-winding type rotating electric machine with an open neutral point. The rotating electric machine 3 has a U-phase winding 3U, a V-phase winding 3V, and a W-phase winding 3W. Hereinafter, the U-phase winding 3U, the V-phase winding 3V, and the W-phase winding 3W may be simply referred to as windings 3U, 3V, and 3W.

[0020] The rotating electric machine 3 functions, for example, as a drive source for a moving body, that is, as an electric motor. If the moving body is a vehicle, the rotating electric machine 3 generates torque for driving drive wheels (not shown). The rotating electric machine 3 is not limited to an electric motor. The rotating electric machine 3 may be a motor generator that functions as both an electric motor and a generator, or may be a generator.

[0021] The power conversion circuit 4 converts power between the DC power supply 2 and the rotating electric machine 3. The drive system 1 is a common power supply system in which a common DC power supply 2 supplies power to two inverters 8 and 9 (described later) to drive the rotating electric machine 3. The drive system 1 may include only one common DC power supply 2 as shown in FIG. 1, or multiple common DC power supplies 2. The drive system 1 may include a power supply switch (not shown), such as an SMR, between the DC power supply 2 and the power conversion circuit 4. SMR is an abbreviation for System Main Relay. Turning the power supply switch on enables power supply from the DC power supply 2 to the rotating electric machine 3, and turning the power supply switch off cuts off the power supply from the DC power supply 2 to the rotating electric machine 3.

[0022] <Power conversion circuit> Next, the power conversion circuit 4 will be described with reference to Fig. 1. Fig. 1 shows an example of the power conversion circuit 4. The power conversion circuit 4 shown in Fig. 1 includes power lines 5 and 6, a smoothing capacitor 7, inverters 8 and 9, a changeover switch 10, and snubber circuits 11 and 12.

[0023] The power supply line 5 is a high-potential power line. The power supply line 5 is connected to the positive electrode of the DC power supply 2. The power supply line 5 may be referred to as a positive-side power supply line, P line, etc. The power supply line 5 has a wiring 5A. The wiring 5A is a part of the wiring that constitutes the power supply line 5. The wiring 5A is a part of the power supply line 5 that connects the inverter 8 and the inverter 9. The power supply line 6 is a low-potential power line. The power supply line 6 is connected to the negative electrode of the DC power supply 2. The power supply line 6 may be referred to as a negative-side power supply line, N line, etc. The power supply line 6 has a wiring 6A. The wiring 6A is a part of the wiring that constitutes the power supply line 6. The wiring 6A is a part of the power supply line 6 that connects the inverter 8 and the inverter 9. The power supply lines 5, 6 are configured to include a bus bar that is, for example, a metal plate.

[0024] The smoothing capacitor 7 mainly smoothes the DC voltage supplied from the DC power supply 2. The smoothing capacitor 7 is provided between the power supply lines 5 and 6. The positive electrode of the smoothing capacitor 7 is connected to the power supply line 5 between the DC power supply 2 and the inverters 8 and 9. The negative electrode of the smoothing capacitor 7 is connected to the power supply line 6 between the DC power supply 2 and the inverters 8 and 9. The smoothing capacitor 7 is connected in parallel to the inverters 8 and 9.

[0025] The inverters 8 and 9 are DC-AC conversion circuits. The inverters 8 and 9 are three-phase inverter circuits. The inverter 8 corresponds to a first inverter, and the inverter 9 corresponds to a second inverter. The inverter 8 is configured with upper and lower arm circuits 8HL for three phases. The upper and lower arm circuits 8HL are sometimes referred to as legs. The upper and lower arm circuit 8HL has an upper arm 8H and a lower arm 8L. The upper arm 8H and the lower arm 8L are connected in series between the power supply lines 5 and 6, with the upper arm 8H on the power supply line 5 side.

[0026] The connection point between the upper arm 8H and the lower arm 8L is connected to the winding of the corresponding phase in the rotating electric machine 3 via an output line 13. The inverter 8 has six arms. Each arm is configured with a switching element. The number of switching elements configuring each arm is not particularly limited. There may be one or more. When there are more than one switching elements, the multiple switching elements connected in parallel to each other are turned on and off at the same timing by a common gate drive signal (drive voltage).

[0027] In the example shown in FIG. 1, an n-channel MOSFET 8S is used as the switching element constituting each arm. MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. In the upper arm 8H, the drain terminal of the MOSFET 8S is connected to the power supply line 5. In the lower arm 8L, the source terminal of the MOSFET 8S is connected to the power supply line 6. The source terminal of the MOSFET 8S in the upper arm 8H and the drain terminal of the MOSFET 8S in the lower arm 8L are connected to each other.

[0028] A freewheeling diode 8D is connected in antiparallel to each MOSFET 8S. The diode 8D may be a parasitic diode (body diode) of the MOSFET 8S, or may be provided separately from the parasitic diode. The anode terminal of the diode 8D is connected to the source terminal of the corresponding MOSFET 8S, and the cathode terminal is connected to the drain terminal.

[0029] The inverter 9 has the same configuration as the inverter 8. The inverter 9 is configured with upper and lower arm circuits 9HL for three phases. The upper and lower arm circuit 9HL has an upper arm 9H and a lower arm 9L. The upper arm 9H and the lower arm 9L are connected in series between the power supply lines 5 and 6, with the upper arm 9H on the power supply line 5 side.

[0030] The connection point between the upper arm 9H and the lower arm 9L is connected to the winding of the corresponding phase in the rotating electric machine 3 via an output line 14. The inverter 9 also has six arms. Each arm is configured with a switching element. The number of switching elements constituting each arm is not particularly limited. It may be one or more.

[0031] In the example shown in Fig. 1, an n-channel MOSFET 9S is used as the switching element constituting each arm. In the upper arm 9H, the drain terminal of the MOSFET 9S is connected to the power supply line 5. In the lower arm 9L, the source terminal of the MOSFET 9S is connected to the power supply line 6. The source terminal of the MOSFET 9S in the upper arm 9H and the drain terminal of the MOSFET 9S in the lower arm 9L are connected to each other. A freewheeling diode 9D is connected in anti-parallel to each MOSFET 9S.

[0032] As described above, the high-potential terminals (drain terminals) of the upper arms 8H, 9H of the inverters 8, 9 are connected to the power line 5. The low-potential terminals (source terminals) of the lower arms 8L, 9L are connected to the power line 6. A node connecting the upper arm 8H and the lower arm 8L is connected to one end of the corresponding phase winding via an output line 13, and a node connecting the upper arm 9H and the lower arm 9L is connected to the other end of the corresponding phase winding via an output line 14. Specifically, one end of the U-phase winding 3U is connected to a node U1 of the U-phase upper and lower arm circuit 8HL, and the other end of the U-phase winding 3U is connected to a node U2 of the U-phase upper and lower arm circuit 9HL. One end of the V-phase winding 3V is connected to a node V1 of the V-phase upper and lower arm circuit 8HL, and the other end of the V-phase winding 3V is connected to a node V2 of the V-phase upper and lower arm circuit 9HL. One end of the W-phase winding 3W is connected to a node W1 of a W-phase upper and lower arm circuit 8HL, and the other end of the W-phase winding 3W is connected to a node W2 of a W-phase upper and lower arm circuit 9HL.

[0033] The switching elements constituting the inverters 8 and 9 are not limited to the MOSFETs described above. For example, IGBTs may be used. IGBT stands for Insulated Gate Bipolar Transistor. In the case of an IGBT, a freewheeling diode is also connected in anti-parallel.

[0034] The changeover switch 10 is a semiconductor switch. A semiconductor switch has a switching element formed on a semiconductor chip. The switching element is not particularly limited and may have the same configuration as the switching element constituting at least one of the inverters 8, 9, or may have a different configuration. The changeover switch 10 is provided between the inverters 8 and 9 on at least one of the power supply lines 5, 6. When the changeover switch 10 is closed, it connects the high-potential side terminal of the upper arm 9H of the inverter 9 to the smoothing capacitor 7 (DC power supply 2). When the changeover switch 10 is open, it cuts off the connection between the high-potential side terminal of the upper arm 9H and the smoothing capacitor 7 (DC power supply 2). The changeover switch 10 may also be called a switch or an open / close switch.

[0035] The switching element of the changeover switch 10 illustrated in FIG. 1 is a MOSFET. A diode is connected in anti-parallel to the MOSFET. The diode is, for example, a parasitic diode. The changeover switch 10 includes changeover switches 10A and 10B. The changeover switch 10A is arranged on wiring 5A of the power supply line 5. The changeover switch 10A is arranged on wiring 5A so that the drain terminal of the MOSFET is on the inverter 8 side and the source terminal is on the inverter 9 side. In other words, the changeover switch 10A is arranged so that the forward direction of the diode is from the inverter 9 to the inverter 8.

[0036] The changeover switch 10B is arranged on the wiring 6A of the power supply line 6. The changeover switch 10B is arranged on the wiring 6A so that the drain terminal of the MOSFET is on the inverter 9 side and the source terminal is on the inverter 8 side. In other words, the changeover switch 10B is arranged so that the forward direction of the diode is from the inverter 8 to the inverter 9. When the MOSFET is turned on and the changeover switch 10 is closed, the inverter 9 is electrically connected to the smoothing capacitor 7 (DC power supply 2). When the MOSFET is turned off and the changeover switch 10 is opened, the electrical connection between the inverter 9 and the smoothing capacitor 7 is interrupted.

[0037] The snubber circuit 11 is connected in parallel to the inverter 9, i.e., the upper and lower arm circuits 9HL. The snubber circuit 11 reduces the inductance of the upper and lower arm circuits 9HL. In other words, the snubber circuit 11 absorbs a transient high voltage, or so-called switching surge, that occurs when the switching elements (MOSFETs 9S) that make up the upper and lower arm circuits 9HL are switched. This enables the inverter 9 to perform high-speed switching.

[0038] The snubber circuit 11 has at least a capacitor 11C. The snubber circuit 11 may be, for example, a C snubber circuit having a capacitor, or an RC snubber circuit having a capacitor and a resistor. It may also be an RCD snubber circuit having a capacitor, a resistor, and a diode. The snubber circuit 11 shown in FIG. 1 is an RC snubber circuit in which a capacitor 11C and a resistor 11R are connected in series. One end of the snubber circuit 11 is connected to the power supply line 5. Another end of the snubber circuit 11 is connected to a portion of the wiring 5A that connects the changeover switch 10 and the inverter 9. The other end of the snubber circuit 11 is connected to the power supply line 6.

[0039] In the power conversion circuit 4 illustrated in FIG. 1, a snubber circuit 11 is provided for each phase of the upper and lower arm circuits 9HL. The power conversion circuit 4 includes three snubber circuits 11. One end of each snubber circuit 11 is connected to the power supply line 5, and the other end is connected to the power supply line 6. Each snubber circuit 11 includes a capacitor 11C and a resistor 11R. One of the snubber circuits 11 is connected in parallel to the U-phase upper and lower arm circuit 9HL. The other snubber circuit 11 is connected in parallel to the V-phase upper and lower arm circuit 9HL. The other snubber circuit 11 is connected in parallel to the W-phase upper and lower arm circuit 9HL.

[0040] The snubber circuit 12 is connected in parallel to the inverter 8, i.e., the upper and lower arm circuits 8HL. The snubber circuit 12 reduces the inductance of the upper and lower arm circuits 8HL, thereby enabling high-speed switching of the inverter 8. The snubber circuit 12 includes at least a capacitor 12C. The snubber circuit 12 may be, for example, a C snubber circuit, an RC snubber circuit, or an RCD snubber circuit. The snubber circuit 12 shown in FIG. 1 is an RC snubber circuit in which a capacitor 12C and a resistor 12R are connected in series. One end of the snubber circuit 12 is connected to the power supply line 5. The other end of the snubber circuit 12 is connected to the power supply line 6.

[0041] In the power conversion circuit 4 illustrated in FIG. 1, a snubber circuit 12 is provided for each phase of the upper and lower arm circuits 8HL. The power conversion circuit 4 includes three snubber circuits 12. One end of each snubber circuit 12 is connected to the power supply line 5, and the other end is connected to the power supply line 6. Each snubber circuit 12 includes a capacitor 12C and a resistor 12R. One of the snubber circuits 12 is connected in parallel to the U-phase upper and lower arm circuit 8HL. The other snubber circuit 12 is connected in parallel to the V-phase upper and lower arm circuit 8HL. The other snubber circuit 12 is connected in parallel to the W-phase upper and lower arm circuit 8HL.

[0042] As illustrated in FIG. 1, the power conversion circuit 4 may include a control unit (CTR) 15. The control unit 15 may include, for example, a processor 15a, a memory 15b, and a storage 15c. The processor 15a accesses the memory 15b to execute various processes. The memory 15b is a rewritable volatile storage medium. The memory 15b is, for example, a RAM. RAM is an abbreviation for Random Access Memory. The storage 15c is a rewritable nonvolatile memory. The storage 15c may be realized by at least one type of non-transitory tangible storage medium, such as a semiconductor memory, a magnetic medium, or an optical medium. The storage 15c may include multiple types of storage media, such as a ROM and a flash memory. ROM is an abbreviation for Read Only Memory.

[0043] The storage 15c stores a program 15d executed by the processor 15a. The program 15d configures a plurality of functional units by causing the processor 15a to execute a plurality of instructions. The processing performed by the control unit 15 may be realized by software processing in which the processor 15a executes the program 15d described above, or may be realized by hardware processing using a dedicated electronic circuit. It may also be realized by a combination of software processing and hardware processing. The program 15d includes a program for executing a rotation control process, which will be described later.

[0044] The control unit 15 may include, for example, a drive command generation unit and a drive circuit unit (not shown). The drive command generation unit controls the inverters 8 and 9. The drive command generation unit generates drive commands (command signals) for controlling the on / off of the MOSFETs 8S and 9S and outputs them to the drive circuit unit. The drive command generation unit generates drive commands based on drive requests for the rotating electric machine 3, such as torque command values ​​input from a higher-level ECU (not shown), and signals detected by various sensors. The various sensors may include current sensors, rotation angle sensors, voltage sensors, and the like (not shown). The current sensors detect phase currents flowing through the windings 3U, 3V, and 3W of each phase. The rotation angle sensors detect the rotation angle of the rotor of the rotating electric machine 3. The voltage sensor detects the voltage across the smoothing capacitor 7. The current sensors include a current sensor 120 (described later) and the like.

[0045] The drive command generation unit controls the changeover switch 10 (10A, 10B). The drive command generation unit generates drive commands for controlling the on / off of the changeover switch 10 and outputs the drive commands to the drive circuit unit. The drive circuit unit is sometimes referred to as a driver. The drive circuit unit can independently control the on / off of the MOSFET 8S, MOSFET 9S, and changeover switch 10 based on the drive commands. For convenience, signal lines for transmitting drive signals from the control unit 15 to each switching element are omitted in FIG. 1.

[0046] <Star connection drive and open connection drive> Next, star connection driving and open connection driving will be described with reference to Figures 2, 3, and 4. Figure 2 shows an example of an operating point map of a rotating electric machine, with the horizontal axis representing rotation speed and the vertical axis representing torque. Figure 3 is a diagram showing star connection driving. Figure 4 is a diagram showing open connection driving. For convenience, the control unit 15 is omitted from Figures 3 and 4.

[0047] As shown in FIG. 2, the driving range of the rotating electric machine 3 is divided into two ranges depending on the rotation speed and torque. One of the driving ranges is the star connection driving range. The star connection driving range is the normal use range. The other driving range is the open connection driving range. The open connection driving range is a range with higher rotation speeds or higher torque than the star connection driving range.

[0048] When the operating point is in the star connection drive region, the control unit 15 executes star connection drive control. Star connection drive is sometimes referred to as Y drive. The control unit 15 controls the MOSFETs 8S and 9S and the changeover switch 10 so that the windings 3U, 3V, and 3W are in a star connection state. Specifically, as shown in FIG. 3, the MOSFETs of the changeover switch 10 (10A, 10B) are turned off and the changeover switch 10 is opened. The inverter 9 is also neutralized. As shown in FIG. 3, for example, the MOSFETs 9S of the upper arms 9H of all phases may be turned on and the MOSFETs 9S of the lower arms 9L of all phases may be turned off. The MOSFETs 9S of the upper arms 9H of all phases may be turned off and the MOSFETs 9S of the lower arms 9L of all phases may be turned on. The MOSFETs 8S of the inverter 8 are then controlled according to drive requirements, etc.

[0049] FIG. 3 shows one current conduction pattern in star-connection drive. The dashed-dotted arrows in FIG. 3 indicate an example of a current path. FIG. 3 shows the current path when the MOSFET 8S in the U-phase upper arm 8H and the MOSFET 8S in the W-phase lower arm 8L are turned on. In the example shown in FIG. 3, the upper arm 9H of the inverter 9 is turned on and the lower arm 9L is turned off. The current flows in the following order: U-phase upper arm 8H → node U1 → U-phase winding 3U → node U2 → U-phase upper arm 9H → W-phase upper arm 9H → node W2 → W-phase winding 3W → node W1 → W-phase lower arm 8L. In this way, in star-connection drive, current flows without passing through the selector switch 10.

[0050] When the operating point is in the open connection drive region, the control unit 15 executes open connection drive control. Open connection drive is sometimes referred to as H drive. The control unit 15 turns on the MOSFET of the changeover switch 10 (10A, 10B) to close the changeover switch 10. The control unit 15 also opens the neutral point of the inverter 9. By opening the neutral point, an open connection circuit of the U-phase upper and lower arm circuits 8HL, 9HL is formed via the U-phase winding 3U. Similarly, an open connection circuit of the V-phase upper and lower arm circuits 8HL, 9HL is formed via the V-phase winding 3V. An open connection circuit of the W-phase upper and lower arm circuits 8HL, 9HL is formed via the W-phase winding 3W. The control unit 15 regards each phase as an independent open connection circuit and controls the applied voltage for each phase.

[0051] FIG. 4 shows one current conduction pattern in open-connection driving. The two-dot chain arrow in FIG. 4 indicates one example of a current path. FIG. 4 shows the current path when MOSFET 8S in W-phase lower arm 8L and MOSFET 9S in W-phase upper arm 9H are turned on. Current flows in the following order: changeover switch 10 → W-phase upper arm 9H → node W2 → W-phase winding 3W → node W1 → W-phase lower arm 8L. In this way, in open-connection driving, current flows via changeover switch 10.

[0052] As described above, the power conversion circuit 4 is configured to be switchable between star connection drive and open connection drive. The power conversion circuit 4 is configured to be able to execute star connection drive. The power conversion circuit 4 is configured to be able to execute open connection drive. By executing open connection drive instead of star connection drive, it is possible to output a higher rotation speed range or a higher torque range.

[0053] <Charging using a power conversion circuit> Next, charging using the power conversion circuit 4 will be described with reference to Fig. 5. Fig. 5 shows a circuit configuration showing a state in which an external device is connected. In Fig. 5, the external device is shown in a simplified form.

[0054] As shown in FIG. 5, the external device 16 is connected to the power supply lines 5 and 6. The external device 16 is connected in parallel to the DC power supply 2. The external device 16 is an element separate from the elements constituting the drive system 1. The external device 16 may be, for example, an element external to a moving body (vehicle). An example of the external device 16 is a charger. The charger charges the DC power supply 2. The voltage supplied by the external device 16 is lower than the power supply voltage of the DC power supply 2. For example, the DC power supply 2 is 800 V, and the external device 16 (charger) is 400 V. In the rotating electric machine 3 and the power conversion circuit 4, the windings 3U, 3V, and 3W of the rotating electric machine 3 and the upper and lower arm circuit 8HL constituting the inverter 8 function as a boost circuit.

[0055] The external device 16 is connected to the drive system 1 (power conversion circuit 4) while the vehicle is stopped, for example. When the external device 16 is connected, the control unit 15 controls the inverters 8 and 9 and the selector switch 10 to boost the supply voltage of the external device 16 and charge the DC power supply 2. The boost operation may use one phase or multiple phases (multi-phase). The control unit 15 turns off the MOSFET of the selector switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the upper and lower MOSFETs 8S of the upper and lower arm circuit 8HL in the corresponding phase.

[0056] External device 16 may be a DC power supply (external power supply) separate from DC power supply 2. The external power supply may be, for example, a secondary battery or may include a DC-AC conversion circuit. DC power supply 2 charges external device 16. The power supply voltage of external device 16 is lower than the power supply voltage of DC power supply 2. In rotating electric machine 3 and power conversion circuit 4, windings 3U, 3V, 3W of rotating electric machine 3 and upper arm 8H of inverter 8 function as a step-down circuit.

[0057] When an external device 16 is connected to the drive system 1, the control unit 15 controls the inverters 8 and 9 and the selector switch 10 to step down the power supply voltage of the DC power supply 2 and charge the external device 16. In the step-down operation, one phase or multiple phases (multi-phase) may be used. The control unit 15 turns off the MOSFET of the selector switch 10. In this state, the control unit 15 turns on the upper arm 9H of the inverter 9 and controls the on / off of the MOSFET 8S of the upper arm 8H of the corresponding phase. The MOSFET 8S of the lower arm 8L of the corresponding phase is turned off. When the MOSFET 8S of the upper arm 8H is turned off, a current flows through the diode of the lower arm 8L of the corresponding phase.

[0058] Fig. 6 shows an example of an external device connection structure corresponding to the circuit configuration shown in Fig. 5. Fig. 6 shows a connection structure between a power conversion module and an external device. Fig. 6 shows a simplified view of the external device. Fig. 6 also shows directions (X direction and Y direction) that will be described later.

[0059] The power conversion module 20 shown in FIG. 6 provides the main components of the power conversion circuit 4. The power conversion module 20 provides inverters 8 and 9, a changeover switch 10, and snubber circuits 11 and 12. The power conversion module 20 includes two circuit units 201 and 202, as described below. The power conversion module 20 includes a charging terminal 113 connected to the circuit unit 202. The power conversion module 20 converts the power supplied to the rotating electric machine 3. The power supply device 21 provides the DC power supply 2. The capacitor device 22 provides the smoothing capacitor 7. The external device 23 provides the external device 16.

[0060] The positive electrode of the power supply device 21 is electrically connected to the positive terminal of the capacitor device 22 via the P bus bar 24P. The negative electrode of the power supply device 21 is electrically connected to the negative terminal of the capacitor device 22 via the N bus bar 24N. The positive terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the P bus bar 25P. The negative terminal of the capacitor device 22 is electrically connected to the power conversion module 20 via the N bus bar 25N. The positive terminal of the external device 23 is electrically connected to the charging terminal 113 of the power conversion module 20 via the P bus bar 26P. The negative terminal of the external device 23 is electrically connected to, for example, the N bus bar 24N via the N bus bar 26N. The negative terminal of the external device 23 is connected to a position closer to the power supply device 21 than the capacitor device 22. This reduces inductance. Note that the conductive member electrically connecting corresponding elements is not limited to a bus bar. It may be a cable, a terminal, or the like.

[0061] The power conversion module 20 is connected to the winding section 3 coil via the output bus bar 27 out. In the power conversion module 20, O terminals 115 and 116, which will be described later, are connected to the output bus bar 27 out. The winding section 3 coil is provided in the rotating electric machine 3 and forms windings 3U, 3V, and 3W. The output bus bar 27 out electrically connects the circuit units 201 and 202 to the winding section 3 coil. The output bus bar 27 out forms at least a part of the output lines 13 and 14.

[0062] The drive system 1 has a power conversion device 18. The power conversion device 18 converts the power supplied to the rotating electric machine 3 using a power conversion module 20. The power conversion device 18 forms a power conversion circuit 4. The power conversion circuit 4 is sometimes referred to as a power conversion device. The power conversion device 18 is configured to include a power conversion module 20, a capacitor device 22, and a device housing. The device housing is a case for the power conversion device 18 and houses the power conversion module 20 and the capacitor device 22. The device housing is made of a resin material or the like. The device housing is provided with an input terminal block, an output terminal block, an external terminal block, etc. The input terminal block is a terminal block for connecting the P bus bar 24P and the N bus bar 24N. The output terminal block is a terminal block for connecting the output bus bar 27out. The external terminal block is a terminal block for connecting the P bus bar 26P and the N bus bar 26N.

[0063] <Current sensor> As shown in FIG. 1, the power conversion circuit 4 has a current sensor 120. The current sensor 120 is a shunt resistor type current sensor. The current sensor 120 has a shunt resistor and detects a current flowing through the shunt resistor. The current sensor 120 is communicably connected to the control unit 15. The current sensor 120 outputs a detection signal to the control unit 15 according to the current flowing through the shunt resistor.

[0064] The current sensors 120 include a first current sensor 121 and a second current sensor 122. The current sensors 121 and 122 detect phase currents flowing through the windings 3U, 3V, and 3W. A current sensor 121 and 122 are provided for each of the three phases. The current sensors 121 and 122 include current sensors 121 and 122 that detect the current flowing through the U-phase winding 3U, current sensors 121 and 122 that detect the current flowing through the V-phase winding 3V, and current sensors 121 and 122 that detect the current flowing through the W-phase winding 3W.

[0065] The first current sensor 121 detects the current flowing in the output line 13. The first current sensor 121 is provided in the output line 13, but is not provided in the output line 14. The first current sensor 121 is provided in the output line 13 between the windings 3U, 3V, 3W and the inverter 8. The first current sensor 121 detects the current flowing in the output line 13 as the current flowing in the windings 3U, 3V, 3W. The output line 13 corresponds to the output path. The output line 13 may be referred to as the first path.

[0066] The second current sensor 122 detects the current flowing in the output line 14. The second current sensor 122 is provided in the output line 14, but is not provided in the output line 13. The second current sensor 122 is provided in the output line 14 between the windings 3U, 3V, 3W and the inverter 9. The second current sensor 122 detects the current flowing in the output line 14 as the current flowing in the windings 3U, 3V, 3W. The output line 14 corresponds to the output path. The output line 14 is sometimes referred to as the second path.

[0067] The power conversion circuit 4 has a current path through which a current flows. The current path includes power lines 5 and 6, a selector switch 10, output lines 13 and 14, and windings 3U, 3V, and 3W. Between the first current sensor 121 and the second current sensor 122, a portion of output line 13, a portion of output line 14, and windings 3U, 3V, and 3W form the current path. Losses such as resistance losses and heat losses are likely to occur in the current path between the first current sensor 121 and the second current sensor 122. Losses occurring in the windings 3U, 3V, and 3W are particularly likely to be larger than losses occurring in a portion of output line 13 or a portion of output line 14. Because the losses occurring in the windings 3U, 3V, and 3W are relatively large, differences are likely to occur between the detection results of the first current sensor 121 and the second current sensor 122.

[0068] Power supply lines 5 and 6 connect inverter 8 and inverter 9 without passing through windings 3U, 3V, and 3W. In power supply line 5, wiring 5A connects upper arm 8H to upper arm 9H. In power supply line 6, wiring 6A connects lower arm 8L to lower arm 9L. Power supply lines 5 and 6 electrically connect DC power supply 2 to inverters 8 and 9.

[0069] The control unit 15 can detect abnormalities in the current sensors 121 and 122 by using the detection results of the current sensors 121 and 122. The control unit 15 acquires the detection result of the first current sensor 121 as a first detection value, and acquires the detection result of the second current sensor 122 as a second detection value.

[0070] <Power conversion module> Next, the structure of a power conversion module will be described with reference to Figures 7, 8, 9, and 10. Figure 7 is a plan view showing an example of a power conversion module. For convenience, the sealing body is omitted from Figure 7. Figure 8 is a diagram showing the power conversion module without the cooler, housing, and sealing body. In other words, it is a diagram showing the circuit elements of the power conversion module. Figure 9 is a cross-sectional view taken along line IX-IX in Figure 7. Figure 10 is a cross-sectional view taken along line XX in Figure 7.

[0071] In the following, the thickness direction of the substrate is referred to as the Z direction, and the direction perpendicular to the Z direction is referred to as the X direction. The direction perpendicular to both the Z direction and the X direction is referred to as the Y direction. Unless otherwise specified, the shape viewed from the Z direction, in other words, the shape along the XY plane defined by the X and Y directions, is referred to as the planar shape. Furthermore, the planar view from the Z direction may sometimes be simply referred to as the planar view.

[0072] The power conversion module 20 provides at least a part of the above-described power conversion circuit 4. The power conversion module 20 includes a cooler 30, a housing 40, a substrate 50, a semiconductor element 60, a snubber component 70, a changeover switch 80, a clip 90, a bus bar 100, and a main terminal 110. The power conversion module 20 may also be referred to as a semiconductor module, an inverter module, a power conversion device, or the like. A circuit is formed by wiring members including the conductors of the substrate 50, the clip 90, and the bus bar 100, and electronic components including the semiconductor element 60, the snubber component 70, and the changeover switch 80 mounted on the substrate 50. The main terminal 110 is a terminal for external connection connected to the circuit.

[0073] The cooler 30 supports other elements constituting the power conversion module 20. The cooler 30 corresponds to a support member. The cooler 30 cools circuit elements of the power conversion module 20, such as the semiconductor device 60 and the snubber component 70. The cooler 30 is formed using a metal material such as Al or Cu. The illustrated cooler 30 has a case 31 and a lid 32. The case 31 and the lid 32 form a flow path 33 when the lid 32 is attached to the case 31. The case 31 is, for example, box-shaped with one side open. The lid 32 is fixed to the case 31 so as to close the opening of the case 31. Fins 34, for example, a plurality of pin fins, are provided on the inner surface of the lid 32. The fins 34 are arranged in the flow path 33. The flow path 33 extends, for example, in the X direction.

[0074] The cooler 30 has an inlet pipe 35 and an outlet pipe 36 provided on the side wall of the case 31. In the example shown in FIG. 9, the inlet pipe 35 is attached to the side wall on the substrate 52 side in the X direction, and the outlet pipe 36 is attached to the side wall on the substrate 51 side. A refrigerant 37 is supplied to the flow path 33 via the inlet pipe 35. The refrigerant 37 that has flowed through the flow path 33 is discharged to the outside of the cooler 30 via the outlet pipe 36. A phase-change refrigerant such as water or ammonia, or a phase-non-change refrigerant such as an ethylene glycol-based refrigerant may be used as the refrigerant 37. For example, LLC may be used as the refrigerant 37. LLC is an abbreviation for long life coolant.

[0075] The cooler 30 has one surface 301 and a back surface 302. The back surface 302 is the surface opposite to the one surface 301 in the Z direction. A substrate 50 is disposed on the one surface 301. The flow path 33 is provided so as to overlap the semiconductor element 60 and the snubber component 70 in a plan view in order to effectively cool the semiconductor element 60, the snubber component 70, and the like. The flow path 33 is provided so as to overlap most of the substrate 50 in a plan view.

[0076] The cooler 30 is not limited to the configuration having the flow path 33 described above. A heat dissipation member such as a heat sink may be used as the cooler 30. A heat sink is sometimes referred to as a heat sink or a cooling plate. The heat dissipation member may include heat dissipation fins. If insulation of the substrate 50 from the cooler 30 is not required, a bonding material such as solder or sintered Ag may be interposed between the substrate 50 and the cooler 30. In other words, the substrate 50 may be bonded to one surface 301 of the cooler 30. If insulation is required, an electrically insulating member may be disposed between the substrate 50 and the cooler 30. For example, a ceramic plate or a resin sheet may be used as the insulating member. A TIM such as silicone gel may be used to improve thermal conductivity. TIM is an abbreviation for Thermal Interface Material. A support member that does not provide a cooling function may be used instead of the cooler 30.

[0077] The housing 40 is formed using an electrically insulating material such as resin. The housing 40 may be, for example, a resin molded body. The housing 40 may hold some of the elements of the power conversion module 20. Some of the elements may be integrally molded with the housing 40 as an insert part. The housing 40 may be fixed to the cooler 30. The housing 40 may be fixed to a case (not shown) that houses the power conversion module 20 together with the cooler 30. When the housing 40 is arranged on one side of the cooler 30, it provides, together with the cooler 30, a space for accommodating electronic components such as the substrate 50 and the semiconductor element 60 mounted on the substrate 50.

[0078] The illustrated housing 40 includes a frame body 41 and a partition wall 42. The frame body 41 has a predetermined height in the Z direction and is annular so as to surround the substrate 50 in a plan view in the Z direction. The frame body 41 may be referred to as an annular wall portion. The frame body 41 may be an approximately rectangular annular portion. The rectangular annular frame body 41 has four walls 411, 412, 413, and 414.

[0079] The wall portions 411 and 412 extend substantially in the X direction. The wall portions 411 and 412 are disposed opposite each other with a predetermined gap in the Y direction. The wall portion 411 is disposed on one end side of the substrate 50 in the Y direction, and the wall portion 412 is disposed on the other end side of the substrate 50. The wall portions 413 and 414 extend in the Y direction. The wall portion 413 is continuous with the wall portions 411 and 412 at one end side in the X direction. The wall portion 414 is continuous with the wall portions 411 and 412 at the other end side in the X direction.

[0080] The partition wall 42 has a predetermined height in the Z direction and is connected to the frame body 41. The partition wall 42 divides the area defined by the frame body 41. The partition wall 42 may divide the area into multiple areas, for example, corresponding to the number of substrates 50. The partition wall 42 is sometimes referred to as a partition wall. The partition wall 42 may extend in a predetermined direction, and both ends thereof may be connected to the frame body 41. The illustrated housing 40 has two partition walls 42. The partition walls 42 extend in the Y direction, similar to the wall portions 413 and 414. One end of each partition wall 42 is connected to the wall portion 411, and the other end is connected to the wall portion 412. The two partition walls 42 and the wall portions 413 and 414 are aligned in the X direction at a predetermined interval. The partition walls 42 divide the opposing area of ​​the frame body 41 into three areas. A substrate 50 is housed in each of the three divided areas.

[0081] As illustrated, a seal 43 may be disposed in the storage space formed by the housing 40 and the cooler 30. The seal 43 is disposed in the storage space and seals the substrate 50, electronic components mounted on the substrate 50, and the like. The seal 43 is, for example, a gel or a potting resin. The seal 43 fills the storage space so as not to exceed the upper end of the frame 41. Because the storage space is divided into multiple regions by the partition walls 42 as described above, the impact of stress due to expansion and contraction of the seal 43 on the electronic components mounted on the substrate 50 and the electrical connection structure can be reduced compared to a configuration without division.

[0082] The substrate 50 provides a wiring function. The substrate 50 may also be referred to as a wiring board, a printed circuit board, or the like. A semiconductor element 60, a snubber component 70, and a changeover switch 80 are mounted on the substrate 50. The substrate 50 has, for example, a substantially rectangular planar shape. The power conversion module 20 may include a single substrate 50 or multiple substrates 50. The illustrated substrate 50 includes three substrates 51, 52, and 53.

[0083] Substrate 51, together with electronic components mounted on substrate 51, constitutes a circuit on the inverter 8 side. Substrate 52, together with electronic components mounted on substrate 52, constitutes a circuit on the inverter 9 side. Substrate 51 has an insulating substrate 511 and a conductor arranged on insulating substrate 511. Substrate 52 has an insulating substrate 521 and a conductor arranged on insulating substrate 521. Substrate 53 has an insulating substrate 531 and a conductor arranged on insulating substrate 531. Insulating substrates 511, 521, and 531 are formed using an electrically insulating material such as ceramic or resin.

[0084] The conductors are formed from metals with good electrical and thermal conductivity, such as Cu or Al. The conductors may have a plating film of Ni, Au, or the like on their surfaces. The conductors may be arranged on only one surface of the insulating substrates 511, 521, and 531, or on both one surface and the back surface. The back surfaces of the insulating substrates 511, 521, and 531 are the surfaces facing the cooler 30 in the Z direction. The conductors may be arranged inside the insulating substrates 511, 521, and 531. That is, the substrates 51, 52, and 53 may be single-sided substrates, double-sided substrates, or multilayer substrates with three or more layers including inner layer wiring. The conductors may include via conductors. The via conductors are formed by arranging a conductor, such as a plating, in through holes (vias) formed in the insulating layers that constitute the insulating substrates 511, 521, and 531. The via conductors electrically connect conductors arranged on different layers.

[0085] The substrates 51 and 52 have a common structure. Substrates with the same specifications are used as the substrates 51 and 52. The substrates 51 and 52 are made of the same material and have the same planar shapes. The conductor patterns are also the same. The substrate 53 has a different structure from the substrates 51 and 52. The substrates 51, 52, and 53 all have a substantially rectangular shape in plan view. The substrates 51 and 52 and the substrate 53 have different planar shapes. In the Y direction, the length of the substrates 51 and 52 is substantially equal to the length of the substrate 53. In the X direction, the length of the substrate 53 is shorter than the length of the substrates 51 and 52. The conductor patterns of the substrates 51 and 52 and the substrate 53 are different. The power conversion module 20 includes two types of substrates 50, a total of three substrates 50.

[0086] The substrates 51, 52, and 53 are arranged on one surface 301 of the cooler 30. The substrates 51, 52, and 53 are lined up in the X direction. The substrate 53 is arranged between the substrates 51 and 52. In the X direction, the substrates are lined up in the order of substrate 51, substrate 53, and substrate 52. The substrates 51 and 52 are arranged facing the same direction relative to the cooler 30.

[0087] The illustrated substrate 51 has a conductor 512 arranged on one side and a conductor 513 arranged on the back side. The substrate 52 has a conductor 522 arranged on one side and a conductor 523 arranged on the back side. The substrate 53 has a conductor 532 arranged on one side and a conductor 533 arranged on the back side. The conductors 513, 523, and 533 are electrically isolated from the corresponding conductors 512, 522, and 532 by insulating substrates 511, 521, and 531. The conductors 513, 523, and 533 provide, for example, a heat dissipation function. The substrates 51, 52, and 53 are arranged in the cooler 30 with the conductors 513, 523, and 533 facing the cooler 30.

[0088] The conductors 512, 522, and 532 are patterned. The patterned conductors 512, 522, and 532 provide wiring functions. That is, together with the mounted electronic components, they form a circuit. The conductors 512 of the substrate 51 include a P wiring 514, an N wiring 515, an O wiring 516, and a signal wiring 517. Each wiring is electrically separated by a predetermined gap. The P wiring 514 and the N wiring 515 are power wirings. The P wiring 514 may be referred to as a positive wiring or a high-potential power line. The N wiring 515 may be referred to as a negative wiring or a low-potential power line. The O wiring 516 may be referred to as an output wiring.

[0089] The P wiring 514 is connected to the drain electrode (drain terminal) of the semiconductor element 61H. A P bus bar 101, to which the P terminal 111 is connected, is joined to the P wiring 514. The P wiring 514 electrically connects the P terminal 111 and the semiconductor element 61H. The P wiring 514 is provided for each phase of the upper and lower arm circuits 8HL that constitute the inverter 8. The P wiring 514 extends approximately in the Y direction. The three P wirings 514 are lined up in the X direction at a predetermined interval. The P wiring 514 has wirings 514A, 514B, and 514C. The wiring 514A extends in the Y direction. The wiring 514B is connected to one end of the wiring 514A, and the wiring 514C is connected to the other end.

[0090] Wiring 514B is disposed near an end of substrate 51 in the Y direction. Wiring 514B extends in the X direction from wiring 514A. P bus bar 101 is joined to wiring 514B. Wiring 514C is located in the middle of substrate 51 in the Y direction. Wiring 514C extends in the X direction from wiring 514A at the end opposite to wiring 514B. A corresponding semiconductor element 61H (drain terminal) is joined to wiring 514C.

[0091] Of the three P wirings 514 lined up in the X direction, the P wiring 514 arranged at the end closest to the substrate 52 and the P wiring 514 arranged in the middle are arranged in the same direction. Of these two P wirings 514, wirings 514B and 514C extend from wiring 514A in a direction away from the substrate 52. The remaining P wiring 514 is arranged in a mirror image of the other two, that is, in a line-symmetrical arrangement with respect to an imaginary line substantially parallel to the Y direction. In this P wiring 514, wirings 514B and 514C extend from wiring 514A in a direction approaching the substrate 52.

[0092] The N wiring 515 is electrically connected to the source electrode (source terminal) of the semiconductor element 61L via a clip 912. An N bus bar 102, to which the N terminals 112 are connected, is joined to the N wiring 515. The N wiring 515 electrically connects the N terminals 112 and the semiconductor element 61L. The N wiring 515 has wirings 515A and 515B. The wiring 515A is arranged in the middle of the substrate 51 in the Y direction. The wiring 515A is arranged between the P wiring 514 and the O wiring 516. The wiring 515A extends approximately in the X direction. The wiring 515A extends from near one end of the substrate 51 to near the other end in the X direction. The three-phase semiconductor elements 61L are commonly connected to the wiring 515A via the corresponding clips 912.

[0093] The wiring 515B extends roughly in the Y direction. The wiring 515B has roughly the same length in the Y direction as the P wiring 514 (wiring 514A). The wiring 515B is arranged alternately with the P wiring 514 in the X direction and between the P wirings 514. That is, the N wiring 515 has two wirings 515B. In the X direction, the wirings are arranged in the following order: P wiring 514, wiring 515B, P wiring 514, wiring 515B, P wiring 514. One of the ends of the wiring 515B is arranged near the end of the substrate 51 in the Y direction. The N bus bar 102 is joined to one of the ends of the wiring 515B. The other end of the wiring 515B is connected to the wiring 515A.

[0094] The O wiring 516 is connected to the drain electrode (drain terminal) of the semiconductor element 61L. The O terminal 115 is joined to the O wiring 516. The source terminal of the semiconductor element 61H is electrically connected to the O wiring 516 via a clip 911. The O wiring 516 electrically connects the source terminal of the semiconductor element 61H, the drain terminal of the semiconductor element 61L, and the O terminal 115. The O wiring 516 is provided for each phase. The O wiring 516 is aligned in the Y direction with the P wiring 514 of the corresponding phase via wiring 515A. The O wiring 516 is generally L-shaped in plan view.

[0095] The signal wiring 517 electrically connects the pads of the semiconductor elements 61H and 61L to signal terminals (not shown). The signal wiring 517 is electrically connected to the pads via, for example, bonding wires. The signal wiring 517 is, for example, a signal island formed on the corresponding substrate 51. For convenience, FIG. 5 shows one signal wiring 517 for each semiconductor element 61H, 61L. The signal wiring 517 is aligned with the corresponding semiconductor element 61H in the Y direction. The signal wiring 517 corresponding to the semiconductor element 61H is arranged closer to the wiring 514B than the semiconductor element 61H. The signal wiring 517 is aligned with the corresponding semiconductor element 61L in the X direction. The signal wiring 517 corresponding to the semiconductor element 61L is arranged closer to the substrate 52 than the semiconductor element 61L.

[0096] As described above, the substrate 52 has the same configuration as the substrate 51. The substrate 52 is disposed in the same orientation as the substrate 51 with respect to the cooler 30. The conductor 522 of the substrate 52 is patterned in the same manner as the conductor 512. The conductor 522 includes a P wiring 524, an N wiring 525, an O wiring 526, and a signal wiring 527. The P wiring 524 has the same configuration as the P wiring 514. The P wiring 524 has wirings 524A, 524B, and 524C. The N wiring 525 has the same configuration as the N wiring 515. The N wiring 525 has wirings 525A and 525B. The P wiring 524 and the N wiring 525 are power supply wirings. The O wiring 526 has the same configuration as the O wiring 516. The signal wiring 527 has the same configuration as the signal wiring 517.

[0097] Conductor 532 of substrate 53 includes P wiring 534, N wiring 535, and signal wiring 537. P wiring 534 and N wiring 535 are power wiring that connects inverter 8 and inverter 9. P wiring 534 connects P wiring 514 of substrate 51 and P wiring 524 of substrate 52. P wiring 534 extends generally in the arrangement direction of substrates 51 and 52, that is, in the X direction. P wiring 534 is divided into two in the extension direction. P bus bar 105 and changeover switch 81 are joined to P wiring 534 on the substrate 51 side. Clip 931 and P bus bar 106 are joined to P wiring 534 on the substrate 52 side.

[0098] N wiring 535 connects N wiring 515 of substrate 51 and N wiring 525 of substrate 52. N wiring 535 extends roughly in the X direction. N wiring 535 is divided into two in the extension direction. N bus bar 107 and clip 932 are joined to N wiring 535 on the substrate 51 side. Changeover switch 82 and N bus bar 108 are joined to N wiring 535 on the substrate 52 side. N wiring 535 and N wirings 515, 525 (wirings 515A, 525A) are arranged on an imaginary line roughly parallel to the X direction. N wiring 535 and P wiring 534 are arranged to be shifted in the Y direction. The connection position between N wiring 535 and N wirings 515, 525 is shifted in the Y direction from the connection position between P wiring 534 and P wirings 514, 524.

[0099] The signal wiring 537 electrically connects the pad of the changeover switch 80 to a signal terminal (not shown). The signal wiring 537 is electrically connected to the pad via, for example, a bonding wire. The signal wiring 537 is, for example, a signal island formed on the corresponding substrate 53. For convenience, one signal wiring 537 is shown for one changeover switch 80 in FIG. 5. The signal wiring 537 is aligned with the changeover switch 80 in the Y direction. The signal wiring 537 is arranged on the opposite side of the N wiring 535 with respect to the changeover switch 81. The signal wiring 537 is arranged on the P wiring 534 side with respect to the changeover switch 82.

[0100] The semiconductor element 60 is an electronic component that provides the inverters 8 and 9. The semiconductor element 60 is formed by forming a vertical element on a semiconductor substrate made of silicon (Si), a wide bandgap semiconductor with a wider bandgap than silicon, or the like. Examples of wide bandgap semiconductors include silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), and diamond. The semiconductor element 60 may also be called a power element, a semiconductor chip, or the like.

[0101] The vertical element is configured to pass a main current in the thickness direction of the semiconductor element 60 (semiconductor substrate). The semiconductor element 60 is arranged so that its thickness direction is approximately parallel to the Z direction. The semiconductor element 60 has main electrodes (main terminals) on both sides in the thickness direction. In the illustrated power conversion module 20, the semiconductor element 60 is formed by forming an n-channel MOSFET as a vertical element on a semiconductor substrate made of SiC. The semiconductor element 60 has a drain electrode (drain terminal) on its bottom surface facing the substrate 50 (51, 52) and a source electrode (source terminal) on its top surface opposite the bottom surface.

[0102] When a MOSFET is turned on, a current (main current) flows between the main terminals, that is, between the drain terminal and the source terminal. If the diode is a parasitic diode, the source terminal also serves as the anode terminal, and the drain terminal also serves as the cathode terminal. The diode may be formed on a chip separate from the MOSFET. The drain terminal is the main electrode on the high potential side, and the source terminal is the main terminal on the low potential side. The drain terminal is formed over almost the entire bottom surface. The source terminal is formed on a part of the top surface.

[0103] The semiconductor element 60 has a generally rectangular shape in plan view. The semiconductor element 60 has pads, which are signal terminals, on its upper surface. The pads are formed at positions on the upper surface that are different from the source terminals. The pads include at least a gate pad.

[0104] The multiple semiconductor elements 60 include a semiconductor element 61H that constitutes the upper arm 8H, a semiconductor element 61L that constitutes the lower arm 8L, a semiconductor element 62H that constitutes the upper arm 9H, and a semiconductor element 62L that constitutes the lower arm 9L. The semiconductor elements 60 include three semiconductor elements each, 61H, 61L, 62H, and 62L. The semiconductor elements 61H, 61L, 62H, and 62L are provided for each phase. One semiconductor element 60 provides one arm. In the following, the semiconductor elements 61H and 62H may refer to upper arm elements. The semiconductor elements 61L and 62L may be referred to as lower arm elements.

[0105] Semiconductor elements 61H and 61L are mounted on substrate 51. Semiconductor element 61H is arranged to overlap wiring 514C of P wiring 514 in a plan view. The drain terminal of semiconductor element 61H is joined to P wiring 514 via a bonding material such as solder (not shown). Semiconductor element 61L is arranged to overlap O wiring 516 in a plan view. The drain terminal of semiconductor element 61L is joined to O wiring 516 via a bonding material (not shown).

[0106] The semiconductor elements 61H of each phase are aligned in the X direction. The semiconductor elements 61L of each phase are aligned in the X direction. The semiconductor elements 61H, 61L of corresponding phases are aligned roughly in the Y direction. The semiconductor elements 61H, 61L of corresponding phases are arranged offset in the X direction so that only portions of them face each other in the Y direction. The semiconductor elements 61H, 61L are arranged offset by 90 degrees around an axis approximately parallel to the Z direction. The pads of the semiconductor element 61H are arranged on the wiring 514B side in the Y direction. The pads of the semiconductor element 61L are arranged on the substrate 52 side in the X direction.

[0107] Semiconductor elements 62H and 62L are mounted on the substrate 52. Semiconductor element 62H has the same structure as semiconductor element 61H. That is, semiconductor elements with the same specifications are used as semiconductor elements 61H and 62H. The arrangement of semiconductor element 62H on substrate 52 is the same as the arrangement of semiconductor element 61H on substrate 51. Semiconductor element 62L has the same structure as semiconductor element 61L. That is, semiconductor elements with the same specifications are used as semiconductor elements 61L and 62L. The arrangement of semiconductor element 62L on substrate 52 is the same as the arrangement of semiconductor element 61L on substrate 51. Semiconductor elements 61H, 61L, 62H, and 62L have common specifications.

[0108] The semiconductor element 62H is disposed so as to overlap with the wiring 524C in a plan view. The drain terminal of the semiconductor element 62H is bonded to the wiring 524C via a bonding material (not shown). The semiconductor element 62L is disposed so as to overlap with the O wiring 526 in a plan view. The drain terminal of the semiconductor element 62L is bonded to the O wiring 526 via a bonding material (not shown).

[0109] The semiconductor elements 62H of each phase are aligned in the X direction. The semiconductor elements 62L of each phase are aligned in the X direction. The semiconductor elements 62H, 62L of corresponding phases are aligned roughly in the Y direction. The semiconductor elements 62H, 62L of corresponding phases are arranged offset in the X direction so that only portions of them face each other in the Y direction. The semiconductor elements 62H, 62L are arranged offset by 90 degrees around an axis approximately parallel to the Z direction. The pads of the semiconductor element 62H are arranged on the wiring 524B side in the Y direction. The pads of the semiconductor element 62L are arranged on the opposite side of the substrate 51 in the X direction.

[0110] The snubber component 70 is an electronic component that provides a snubber circuit. The snubber component 70 includes a snubber component 71 that provides the snubber circuit 12 and a snubber component 72 that provides the snubber circuit 11. For convenience, FIGS. 7 to 9 show a simplified illustration. The snubber component 71 has at least a capacitor to provide the snubber circuit 12. The snubber component 71 is mounted on the substrate 51. As described above, the snubber component 71 is connected in parallel to the upper and lower arm circuits 8HL. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515. In the illustrated power conversion module 20, a snubber component 71 is provided for each phase. The snubber component 71 electrically bridges the wiring 514A and the wiring 515B. The snubber component 71 electrically bridges the P wiring 514 and the N wiring 515 at a position closer to the wiring 514B than the semiconductor element 61H. Of the two wirings 515B, one snubber component 71 is connected to the wiring 515B closer to the substrate 52, and two snubber components 71 are commonly connected to the wiring 515B farther from the substrate 52. The snubber components 71 for each phase are aligned in the X direction.

[0111] The snubber component 72 has the same structure as the snubber component 71. That is, snubber components with the same specifications are used as the snubber components 71, 72. The arrangement of the snubber components 72 on the substrate 52 is the same as the arrangement of the snubber components 71 on the substrate 51. In the illustrated power conversion module 20, the snubber component 72 is provided for each phase. The snubber component 72 electrically bridges the wiring 524A and the wiring 525B. The snubber component 72 electrically bridges the P wiring 524 and the N wiring 525 at a position closer to the wiring 524B than the semiconductor element 62H. Of the two wirings 525B, one snubber component 72 is connected to the wiring 525B farther from the substrate 51, and two snubber components 72 are commonly connected to the wiring 525B farther from the substrate 51. The snubber components 72 for each phase are lined up in the X direction.

[0112] The changeover switch 80 functions as the changeover switch 10 in the power conversion circuit 4. The changeover switch 80 is formed by forming a switching element on a semiconductor substrate. In the illustrated power conversion module 20, the changeover switch 80 has a configuration similar to that of the semiconductor element 60. The changeover switch 80 is formed by forming a MOSFET on the semiconductor substrate. A parasitic diode is connected in antiparallel to the MOSFET.

[0113] In the illustrated power conversion module 20, the changeover switch 80 is mounted on the substrate 53. The changeover switch 80 includes changeover switches 81 and 82. The changeover switches 81 and 82 are aligned approximately in the Y direction. The changeover switch 81 is provided on the P wiring 534. The changeover switch 81 is arranged so as to overlap with the P wiring 534 on the substrate 51 side in a plan view. The drain terminal of the changeover switch 81 is joined to the P wiring 534. The source terminal of the changeover switch 81 is connected to the N wiring 535 on the substrate 52 side via a clip 931. The pad of the changeover switch 81 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0114] The changeover switch 82 is provided on the N wiring 535. The changeover switch 82 is arranged so as to overlap with the N wiring 535 on the substrate 52 side in a plan view. The drain terminal of the changeover switch 82 is joined to the N wiring 535. The source terminal of the changeover switch 82 is connected to the N wiring 535 on the substrate 51 side via a clip 932. The pad of the changeover switch 82 is arranged on the side of the corresponding signal wiring 537 in the Y direction.

[0115] The clip 90 bridges the electronic component and the conductor (wiring). The clip 90 may also be referred to as a bridging member, relay member, or metal bridge. The clip 90 is a metal plate made of a highly conductive metal such as Cu or a Cu alloy. The clip 90 may be formed by punching and pressing a metal plate of a predetermined thickness. The clip 90 may also be formed using a profiled material with a different thickness in some areas. The clip 90 may have a film applied to the surface of the base material by surface treatment. The clip 90 may have a plated film of Ni, Au, or the like on its surface. The clip 90 may have a Ni plated film containing P formed on the base material. The NiP film is formed, for example, by electroless plating. Instead of Cu, Ag, Au, Al, or Mg may be used as the base material. Instead of Ni or Au, Sn, Ag, or the like may be used as the film applied to the base material.

[0116] The clips 90 include clips 911 and 912 mounted on the substrate 51, clips 921 and 922 mounted on the substrate 52, and clips 931 and 932 mounted on the substrate 53. The clip 911 is connected to the semiconductor element 61H. The clip 911 is provided individually for the semiconductor element 61H. The clip 911 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 61H to the O wiring 516. The clip 912 is connected to the semiconductor element 61L. The clip 912 is provided individually for the semiconductor element 61L. The clip 912 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 61L to the wiring 515A of the N wiring 515. The clips 911 and 912, together with the semiconductor elements 61H and 61L, the P wiring 514, the N wiring 515, and the O wiring 516, configure the inverter 8.

[0117] The clip 921 has the same structure as the clip 911. That is, clips with the same specifications are used as the clips 911 and 921. The arrangement of the clip 921 on the substrate 52 is the same as the arrangement of the clip 911 on the substrate 51. In the illustrated power conversion module 20, the clip 922 has the same structure as the clip 912. That is, clips with the same specifications are used as the clips 912 and 922. The arrangement of the clip 922 on the substrate 52 is the same as the arrangement of the clip 912 on the substrate 51.

[0118] In the illustrated power conversion module 20, the clip 921 is connected to the semiconductor element 62H. The clip 921 is provided individually for the semiconductor element 62H. The clip 921 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 62H to the O wiring 526. The clip 922 is connected to the semiconductor element 62L. The clip 922 is provided individually for the semiconductor element 62L. The clip 922 extends generally in the Y direction and electrically connects the source terminal of the semiconductor element 62L to the wiring 525A of the N wiring 525. The clips 921 and 922, together with the semiconductor elements 62H and 62L, the P wiring 524, the N wiring 525, and the O wiring 526, configure the inverter 9.

[0119] The clip 931 is connected to the changeover switch 81. The clip 931 extends generally in the X direction. The clip 931 electrically connects the source terminal of the changeover switch 81 mounted on the P wiring 534 on the substrate 51 side to the P wiring 534 on the substrate 52 side. The clip 932 is connected to the changeover switch 82. The clip 932 extends generally in the X direction. The clip 932 electrically connects the source terminal of the changeover switch 82 mounted on the N wiring 535 on the substrate 52 side to the N wiring 535 on the substrate 51 side.

[0120] The busbar 100 electrically connects the conductors (wiring) of the substrate 50. The busbar 100 electrically connects the conductors and the main terminals 110. The busbar 100 may also be referred to as a lead, a wiring member, or the like. The busbar 100 is a plate material formed using a metal material with good conductivity, such as Cu. In the illustrated power conversion module 20, the busbar 100 is held in the housing 40. The busbar 100 includes a P busbar 101 and an N busbar 102 mounted on the substrate 51, and a P busbar 103 and an N busbar 104 mounted on the substrate 52.

[0121] P bus bar 101 commonly connects P wiring 514 provided for each phase. The portion of P bus bar 101 that connects to substrate 51 is branched into three, and each is joined to a corresponding wiring 514B. A P terminal 111 is connected to the end of P bus bar 101 opposite substrate 51 in the Y direction. N bus bar 102 commonly connects multiple wirings 515B. The portion of N bus bar 102 that connects to substrate 51 is branched into two, and each is joined to a corresponding wiring 515B. An N terminal 112 is connected to the end of N bus bar 102 opposite substrate 51 in the Y direction.

[0122] P bus bar 103 has the same structure as P bus bar 101. That is, bus bars with the same specifications are used for P bus bars 101, 103. The arrangement of P bus bar 103 on substrate 52 is the same as the arrangement of P bus bar 101 on substrate 51. N bus bar 104 has the same structure as N bus bar 102. That is, bus bars with the same specifications are used for N bus bars 102, 104. The arrangement of N bus bar 104 on substrate 52 is the same as the arrangement of N bus bar 102 on substrate 51.

[0123] P bus bar 103 commonly connects P wiring 524 provided for each phase. The portion of P bus bar 103 that connects to substrate 52 is branched into three, and each is joined to a corresponding wiring 524B. Charging terminal 113 is connected to the end of P bus bar 103 on the opposite side from substrate 52 in the Y direction. N bus bar 104 commonly connects multiple wirings 525B. The portion of N bus bar 104 that connects to substrate 52 is branched into two, and each is joined to a corresponding wiring 525B.

[0124] P bus bars 101, 103 and N bus bars 102, 104 are held (inserted) in wall portion 411 of frame 41. The board connection portions of P bus bars 101, 103 and N bus bars 102, 104 protrude from wall portion 411 into the accommodation space and are joined to the corresponding wiring.

[0125] Bus bar 100 further includes P bus bars 105 and 106 and N bus bars 107 and 108. P bus bar 105 extends in the X direction in a plan view. One end of P bus bar 105 is joined to P wiring 514 (wiring 514A) closest to substrate 52, and the other end is joined to P wiring 534. P bus bar 106 extends in the X direction in a plan view. One end of P bus bar 106 is joined to P wiring 524 (wiring 524A) closest to substrate 51, and the other end is joined to P wiring 534. N bus bar 107 extends in the X direction in a plan view. One end of N bus bar 107 is joined to the end of N wiring 515 (wiring 515A) on the substrate 52 side, and the other end is joined to N wiring 535. N bus bar 108 extends in the X direction in a plan view. One end of N bus bar 108 is joined to the end of N wiring 525 (wiring 525A) on the substrate 51 side, and the other end is joined to N wiring 535.

[0126] P bus bar 105 and N bus bar 107 are held by partition wall 42 located between substrates 51 and 53. P bus bar 106 and N bus bar 108 are held by partition wall 42 located between substrates 52 and 53. The substrate connection portions of P bus bars 105 and 106 and N bus bars 107 and 108 protrude from partition wall 42 into the accommodation space and are joined to the corresponding wiring.

[0127] Like the busbar 100, the main terminal 110 is a plate material formed using a metal material with good conductivity, such as Cu. The main terminal 110 is an external connection terminal that is electrically connected to the main terminal (main electrode) of the semiconductor element 60. The main terminal 110 includes a P terminal 111 and an N terminal 112 that are power supply terminals, a charging terminal 113, and O terminals 115 and 116. In FIG. 8, the boundary between the busbar 100 and the main terminal 110 is indicated by a two-dot chain line.

[0128] The power supply terminal is an external connection terminal electrically connected to the above-described capacitor device 22 (smoothing capacitor 7). The P terminal 111 is an external connection terminal connected to the positive terminal of the capacitor device 22 via the P bus bar 25P. The P terminal 111 is connected to the P bus bar 101. The P terminal 111 may be connected to the P bus bar 101 continuously and integrally, or may be connected by joining. The P terminal 111 may also be referred to as a positive terminal, a high-potential power supply terminal, or the like. The P terminal 111 is mounted on the substrate 51 via the P bus bar 101. The P terminal 111 extends outward in the Y direction from the wall portion 411 of the frame 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0129] The N terminal 112 is an external connection terminal connected to the negative terminal of the capacitor device 22 via the N bus bar 25N. The N terminal 112 is connected to the N bus bar 102. The N terminal 112 may be connected to the N bus bar 102 continuously and integrally, or may be connected by joining. The N terminal 112 may also be referred to as a negative terminal, a low-potential power supply terminal, or the like. The N terminal 112 is mounted on the substrate 51 via the N bus bar 102. The N terminal 112 extends outward in the Y direction from the wall portion 411 of the frame 41 to a position where it does not overlap with the cooler 30 in a plan view. The N terminal 112 is located closer to the substrate 52 in the X direction than the P terminal 111.

[0130] The charging terminal 113 is an external connection terminal that is connected to the positive terminal of the external device 23 via the P bus bar 26P. The charging terminal 113 is connected to the P bus bar 103. The charging terminal 113 is sometimes referred to as a P terminal because it is electrically connected to the P wiring 524 via the P bus bar 103. The charging terminal 113 may be connected integrally and continuously with the P bus bar 103, or may be connected by joining. The charging terminal 113 is mounted on the substrate 52 via the P bus bar 103. The charging terminal 113 extends outward in the Y direction from the wall portion 411 of the frame body 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0131] In a plan view, the position of charging terminal 113 relative to substrate 52 is different from the position of P terminal 111 relative to substrate 51. The connection position of charging terminal 113 relative to P bus bar 103 is different from the connection position of P terminal 111 relative to P bus bar 101. As shown in FIGS. 7 and 8, P terminal 111 is connected to the vicinity of the end of P bus bar 101 on the wall portion 413 side. Charging terminal 113 is connected to the vicinity of the end of P bus bar 103 on the wall portion 414 side. In the X direction, P terminal 111, N terminal 112, and charging terminal 113 are lined up in this order. In other words, charging terminal 113 is located at one end in the arrangement direction, and P terminal 111 is located at the other end.

[0132] The O terminals 115, 116 are electrically connected to the windings 3U, 3V, 3W of the corresponding phases of the rotating electric machine 3. The O terminals 115, 116 may be referred to as output terminals, AC terminals, etc. The O terminal 115 is joined to the O wiring 516. An O terminal 115 is provided for each phase of the upper and lower arm circuits 8HL. The O terminal 115, together with the O wiring 516, provides the output line 13. The O terminal 115 extends substantially in the Y direction from the joint with the O wiring 516. The O terminal 115 extends outward in the Y direction from the wall portion 412 of the frame body 41 to a position where it does not overlap with the cooler 30 in a plan view.

[0133] The O terminal 116 is joined to the O wiring 526. The O terminal 116 is provided for each phase of the upper and lower arm circuits 9HL. The O terminal 116, together with the O wiring 526, provides the output line 14. The O terminal 116 extends generally in the Y direction from the joint with the O wiring 526. The O terminal 116 extends outward in the Y direction from the wall portion 412 to a position where it does not overlap with the cooler 30 in a plan view. In the illustrated power conversion module 20, the O terminal 116 has the same structure as the O terminal 115. That is, external connection terminals with the same specifications are used as the O terminals 115, 116. The arrangement of the O terminal 116 on the substrate 52 is the same as the arrangement of the O terminal 115 on the substrate 51.

[0134] The power conversion module 20 includes two circuit units 201 and 202 that provide a power conversion circuit 4. The circuit unit 201 includes a substrate 51 and components mounted on the substrate 51. The circuit unit 201 includes, as components mounted on the substrate 51, semiconductor elements 61H and 61L, a snubber component 71, clips 911 and 912, a P bus bar 101, and an N bus bar 102. The circuit unit 201 provides an inverter 8 and a snubber circuit 12. The circuit unit 202 includes a substrate 52 and components mounted on the substrate 52. The circuit unit 202 includes, as components mounted on the substrate 52, semiconductor elements 62H and 62L, a snubber component 72, clips 921 and 922, a P bus bar 103, and an N bus bar 104. The circuit unit 202 provides an inverter 9 and a snubber circuit 11.

[0135] In the power conversion module 20, the O wiring 516 and the O terminal 115 form at least a part of the output line 13. The O wiring 516 and the O terminal 115 are formed of a conductive material such as copper and are conductive. For example, the O terminal 115 is formed of a bus bar member. The O terminal 115 is connected to the output bus bar 27out. The semiconductor elements 61H, 61L are electrically connected to one ends of the windings 3U, 3V, and 3W via the O wiring 516 and the O terminal 115. The O wiring 516 is included in the conductor 512 and is thereby included in the substrate 51. The semiconductor elements 61H, 61L correspond to the first semiconductor element, and the O wiring 516 and the O terminal 115 correspond to the output conductor portion. The O terminal 115 corresponds to the first bus bar. The substrate 51 corresponds to the first substrate, and the O wiring 516 corresponds to the first substrate wiring.

[0136] Furthermore, O wiring 526 and O terminal 116 form at least a part of output line 14. O wiring 526 and O terminal 116 are formed of a conductive material such as copper and are conductive. For example, O terminal 116 is formed of a bus bar member. O terminal 116 is connected to output bus bar 27out. Semiconductor elements 62H, 62L are electrically connected to the other ends of windings 3U, 3V, 3W via O wiring 526 and O terminal 116. O wiring 526 is included in conductor 522 and is therefore included in substrate 52. Semiconductor elements 62H, 62L correspond to a second semiconductor element, and O wiring 526 and O terminal 116 correspond to an output conductor portion. O terminal 116 corresponds to a second bus bar. Substrate 52 corresponds to a second substrate, and O wiring 526 corresponds to second substrate wiring.

[0137] The power conversion module 20 has a control board 45. The control board 45 provides the control unit 15. The control board 45 is formed of a circuit board such as a printed circuit board. The control board 45 is provided so as to be stacked on the housing 40. The control board 45 extends in a direction perpendicular to the Z direction. The outer peripheral edge of the control board 45 extends along the outer peripheral edge of the housing 40.

[0138] <Sensor section> As shown in Figures 7, 8, and 11, the power conversion module 20 has a sensor unit 130. The sensor unit 130 provides the current sensor 120. The sensor unit 130 provides a shunt resistor type current sensor. The sensor unit 130 outputs a detection signal corresponding to the current flowing in an output conductor such as the O wiring 516, 526. The sensor unit 130 is provided in the output conductor and detects the current flowing in the output conductor. The sensor unit 130 corresponds to a current detection unit. For example, the sensor unit 130 has a shunt resistor and outputs a detection signal corresponding to a voltage drop caused by the shunt resistor. In the sensor unit 130, the resistance value of the shunt resistor is set to a predetermined value. The sensor unit 130 is electrically connected to the control board 45 and outputs a detection signal to the control board 45.

[0139] The sensor unit 130 has a shunt resistor unit 141 and sensor pins 142 and 143. The shunt resistor unit 141 is made of a conductive material such as copper and is conductive. The shunt resistor unit 141 is included in an output conductor unit such as O wiring 516 and 526. The shunt resistor unit 141 is a conductive member that passes a current so that the resistance value of the shunt resistor becomes a predetermined value. The size and shape of the shunt resistor unit 141 are set so that the shunt resistance becomes a predetermined value. The shunt resistor unit 141 is sometimes referred to as a resistive element.

[0140] The sensor pins 142 and 143 can output a detection signal of the sensor unit 130 to the control board 45. The sensor pins 142 and 143 electrically connect the shunt resistor unit 141 and the control board 45. For example, as shown in FIG. 11 , the sensor pins 142 and 143 are electrically connected to a wiring pattern or the like while passing through through-holes or other penetration holes in the control board 45. One of the sensor pins 142 and 143 is provided at a higher potential than the other via the shunt resistor unit 141. For example, the sensor pin 142 is provided on the side of the shunt resistor unit 141 where the potential is higher. The sensor pin 143 is provided on the side of the shunt resistor unit 141 where the potential is lower. The shunt resistor unit 141 is provided between the sensor pins 142 and 143. The potential difference between the sensor pins 142 and 143 is a value corresponding to the voltage drop across the shunt resistor unit 141.

[0141] The control unit 15 has a sensor processing unit 144. The sensor processing unit 144 is a function possessed by the control unit 15. The sensor processing unit 144 is a function for calculating a current value in the control unit 155 using a detection signal from the sensor unit 130. For example, the sensor processing unit 144 calculates a current flowing through the shunt resistor unit 141 using the resistance value of the shunt resistor and a voltage drop occurring across the shunt resistor. The sensor processing unit 144 is provided by the control board 45. The sensor pins 142 and 143 electrically connect the part of the control board 45 that provides the sensor processing unit 144 to the shunt resistor unit 141. Note that the sensor processing unit 144 may be included in the sensor unit 130.

[0142] The sensor units 130 include a first sensor unit 131 and a second sensor unit 132. In this embodiment, a plurality of sensor units 130 are provided in the power conversion module 20. The sensor units 131 and 132 are included in the plurality of sensor units 130. A plurality of first sensor units 131 and a plurality of second sensor units 132 are provided in the power conversion module 20. The first sensor unit 131 provides a first current sensor 121. The second sensor unit 132 provides a second current sensor 122.

[0143] The first sensor unit 131 is provided on the O wiring 516 of the circuit unit 201. In the first sensor unit 131, a shunt resistor unit 141 is included in the O wiring 516. In addition to the shunt resistor unit 141, the O wiring 516 has an O wiring unit 516A and an O wiring unit 516B. The O wiring unit 516A and the O wiring unit 516B are provided side by side in a direction perpendicular to the Z direction. The O wiring unit 516A is a portion of the O wiring 516 to which the source terminal of the semiconductor element 61H and the drain terminal of the semiconductor element 61L are connected. For example, the semiconductor element 61L is mounted on the O wiring unit 516A. The O wiring unit 516B is a portion of the O wiring 516 to which the O terminal 115 is connected.

[0144] In the first sensor unit 131, a shunt resistor 141 electrically connects the O wiring unit 516A and the O wiring unit 516B. The shunt resistor 141 connects two conductive members, the O wiring units 516A and 516B, which are arranged side by side. The shunt resistor 141 is disposed across the O wiring unit 516A and the O wiring unit 516B. One end of the shunt resistor 141 is placed on the plate surface of the O wiring unit 516A, and the other end is placed on the plate surface of the O wiring unit 516B.

[0145] In the first sensor unit 131, the sensor pin 142 is connected to the O wiring unit 516A. The sensor pin 142 is provided on the O wiring unit 516A. The sensor pin 143 is connected to the O wiring unit 516B. The sensor pin 143 is provided on the O wiring unit 516B. The sensor pins 142, 143 extend in the Z direction from the O wiring units 516A, 516B toward the control board 45. The sensor pins 142, 143 electrically connect the O wiring units 516A, 516B and the control board 45.

[0146] In the first sensor unit 131, the sensor pins 142 and 143 may be provided in the shunt resistor unit 141. For example, the sensor pin 142 may be provided in a portion of the shunt resistor unit 141 that overlaps with the O wiring unit 516A. The sensor pin 1434 may be provided in a portion of the shunt resistor unit 141 that overlaps with the O wiring unit 516B.

[0147] The second sensor unit 132 is provided on the O wiring 526 of the circuit unit 202. In the second sensor unit 132, a shunt resistor unit 141 is included in the O wiring 526. In addition to the shunt resistor unit 141, the O wiring 526 has an O wiring unit 526A and an O wiring unit 526B. The O wiring unit 526A and the O wiring unit 526B are provided side by side in a direction perpendicular to the Z direction. The O wiring unit 526A is a portion of the O wiring 526 to which the source terminal of the semiconductor element 62H and the drain terminal of the semiconductor element 62L are connected. For example, the semiconductor element 62L is mounted on the O wiring unit 526A. The O wiring unit 526B is a portion of the O wiring 526 to which the O terminal 116 is connected.

[0148] In the second sensor unit 132, a shunt resistor 141 electrically connects the O wiring unit 526A and the O wiring unit 526B. The shunt resistor 141 connects two conductive members, the O wiring units 526A and 526B, which are arranged side by side. The shunt resistor 141 is disposed across the O wiring unit 526A and the O wiring unit 526B. One end of the shunt resistor 141 is placed on the plate surface of the O wiring unit 526A, and the other end is placed on the plate surface of the O wiring unit 526B.

[0149] In the first sensor unit 131, the sensor pin 142 is connected to the O wiring unit 526A. The sensor pin 142 is provided on the O wiring unit 526A. The sensor pin 143 is connected to the O wiring unit 526B. The sensor pin 143 is provided on the O wiring unit 526B. The sensor pins 142, 143 extend in the Z direction from the O wiring units 526A, 526B toward the control board 45. The sensor pins 142, 143 electrically connect the O wiring units 526A, 526B and the control board 45.

[0150] In the second sensor unit 132, the sensor pins 142 and 143 may be provided in the shunt resistor unit 141. For example, the sensor pin 142 may be provided in a portion of the shunt resistor unit 141 that overlaps with the O wiring unit 526A. The sensor pin 1434 may be provided in a portion of the shunt resistor unit 141 that overlaps with the O wiring unit 526B.

[0151] The resistance value of shunt resistor 141 is greater than the resistance value of a portion of the output conductor other than shunt resistor 141. For example, in circuit unit 201, the resistance value of shunt resistor 141 is greater than the resistance value of O wiring portion 516A and the resistance value of O wiring portion 516B. In circuit unit 202, the resistance value of shunt resistor 141 is greater than the resistance value of O wiring portion 526A and the resistance value of O wiring portion 526B. Note that with respect to the output conductor, the resistance value per unit volume or the resistance value per unit length may be simply referred to as the resistance value.

[0152] <Summary of the First Embodiment> According to the present embodiment, the shunt resistor portion 141 forming the shunt resistor is included in the O wiring 516, 526. With this configuration, there is no need to provide a dedicated element such as a sensor element for detecting current in the O wiring 516, 526. Furthermore, the semiconductor elements 61H, 61L, 62H, 62L and the shunt resistor portion 141 are disposed on one surface 301 of the cooler 30. With this configuration, there is no need to provide a dedicated component in the power conversion module 20 for supporting the shunt resistor portion 141. Therefore, the physical size of the power conversion module 20 and the power conversion device 18 can be reduced.

[0153] According to the present embodiment, the housing 40 is disposed on one surface 301 of the cooler 30, and houses the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor portion 141. With this configuration, the size of the power conversion module 20 can be reduced, while the housing 40 can protect the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor portion 141.

[0154] According to the present embodiment, the frame 41 is disposed on one surface 301 of the cooler 30 and, together with the cooler 30, forms an accommodation space for the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141. The sealing body 43 is filled in the accommodation space and seals the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141. In this configuration, by utilizing the configuration in which the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141 are disposed on the one surface 301, the frame 41 and the sealing body 43 can protect the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141.

[0155] According to this embodiment, the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141 are arranged along the flow path 33 of the cooler 30. In this configuration, the semiconductor elements 61H, 61L, 62H, and 62L and the shunt resistor 141 can be effectively cooled by the refrigerant 37 flowing through the flow path 33. In particular, since the cooling effect of the refrigerant 37 is imparted to the shunt resistor 141, it is possible to prevent the current detection accuracy of the sensor unit 130 from being reduced due to heat generation by the shunt resistor 141.

[0156] According to this embodiment, at least a portion of the shunt resistor 141 is provided at a position aligned with the flow path 33 in a direction perpendicular to the one surface 301. In this configuration, it is possible to realize a configuration in which the cooling effect of the refrigerant 37 flowing through the flow path 33 is easily imparted to the shunt resistor 141.

[0157] According to this embodiment, in the substrate 51 on which the semiconductor elements 61H and 61L are provided, the shunt resistor portion 141 is included in the O wiring 516. This makes it possible to realize a configuration in which the shunt resistor portion 141 is built into the circuit unit 201 of the power conversion module 20. Furthermore, in the substrate 51 on which the semiconductor elements 62H and 62L are provided, the shunt resistor portion 141 is included in the O wiring 526. This makes it possible to realize a configuration in which the shunt resistor portion 141 is built into the circuit unit 202 of the power conversion module 20.

[0158] According to this embodiment, the sensor section 130 has a shunt resistor section 141 and detects a current flowing through the shunt resistor section 141. In this configuration, the sensor section 130 can be implemented as a shunt resistor type current sensor.

[0159] 12 and 13 show reference examples of power conversion circuits. Fig. 12 shows an example of a current conduction pattern when star-connected driving is performed in the reference example. Fig. 13 shows a current conduction pattern with timing different from that in Fig. 4 when star-connected driving is performed. In the reference example, the symbols of related elements shown in this embodiment are indicated by adding 'r' to the end of the symbols.

[0160] The control unit performs star connection drive while switching between multiple current conduction patterns. The control unit performs star connection drive using, for example, a PWM control method. PWM is an abbreviation for Pulse Width Modulation. The multiple current conduction patterns include the zero vector current conduction patterns shown in Figures 12 and 13. The current conduction pattern shown in Figure 12 is a zero vector pattern in which all upper arms 8Hr of inverter 8r are turned on and all lower arms 8Lr are turned off. The current conduction pattern shown in Figure 13 is a zero vector pattern in which all lower arms 8Lr of inverter 8r are turned on and all upper arms 8Hr are turned off. The power line 5r has a wiring 5A11r connecting the inverter 8 and the selector switch 10r and a wiring 5A12r connecting the selector switch 10r and the inverter 9r.

[0161] As shown in Figures 12 and 13, in the power conversion circuit 4r of the reference example, the snubber circuit 11r connected in parallel to the inverter 9r is connected to a wiring 5A12r of the power line 5r that connects the selector switch 10r and the inverter 9r. One end of the snubber circuit 11r is connected to the wiring 5A12r of the power line 5r, and the other end is connected to the power line 6r. For convenience, Figures 12 and 13 omit the smoothing capacitor and the snubber circuit connected in parallel to the inverter 8r. Furthermore, the snubber circuit 11r is common to each phase of the inverter 9r.

[0162] In the examples shown in Figures 12 and 13, all three-phase upper arms 9Hr of inverter 9r are turned on to neutralize inverter 9r. In this state, as shown in Figure 12, when all three-phase upper arms 8Hr of inverter 8r are turned on, the voltage across capacitor 11Cr becomes approximately equal to the supply voltage of DC power supply 2r, i.e., power supply voltage Vdc. Furthermore, as shown in Figure 13, when all three-phase lower arms 8Lr of inverter 8r are turned on, the voltage across capacitor 11Cr becomes approximately 0 V (zero volts).

[0163] As described above, star connection driving is performed while switching between multiple current patterns, so the voltage across capacitor 11Cr of snubber circuit 11r fluctuates during star connection driving. The voltage across capacitor 11Cr fluctuates between 0 V and Vdc. As a result, capacitor 11Cr is charged and discharged during star connection driving, resulting in low power conversion efficiency. Resistor 11Rr of snubber circuit 11r consumes the energy stored in capacitor 11Cr and generates heat. This heat affects capacitor 11Cr.

[0164] In contrast to this reference example, in this embodiment, in which the changeover switch 10B is provided on the wiring 6A, the MOSFET of the changeover switch 10B is off, i.e., the changeover switch 10B is in an open state, during star connection driving. Therefore, the potential on the negative side of the capacitor 11C provided in the snubber circuit 11 becomes a floating potential. Therefore, fluctuations in the voltage across the capacitor 11C can be suppressed during star connection driving. In other words, charging and discharging of the capacitor 11C can be suppressed. This improves power conversion efficiency. Furthermore, the effect of heat generated by the resistor 11R due to charging and discharging can be suppressed on the capacitor 11C. This is suitable not only for open connection driving but also for star connection driving.

[0165] <Modification> In the present embodiment, an example has been shown in which the first current sensor 121 and the second current sensor 122 are provided in the power conversion circuit 4 as the current sensor 120, but this is not limiting. The power conversion circuit 4 may be provided with at least one of the first current sensor 121 and the second current sensor 122. For example, as shown in FIG. 14 , the power conversion circuit 4 may be provided with the first current sensor 121 but may not be provided with the second current sensor 122. Furthermore, as shown in FIG. 16 , the power conversion circuit 4 may be provided with the second current sensor 122 but may not be provided with the first current sensor 121.

[0166] That is, in the present embodiment, an example has been shown in which the first sensor unit 131 and the second sensor unit 132 are provided in the power conversion module 20 as the sensor unit 130, but this is not limiting. The power conversion module 20 may be provided with at least one of the first sensor unit 131 and the second sensor unit 132. For example, as shown in FIG. 15 , the power conversion module 20 may be provided with the first sensor unit 131 but may not be provided with the second sensor unit 132. Furthermore, as shown in FIG. 17 , the power conversion module 20 may be provided with the second sensor unit 132 but may not be provided with the first sensor unit 131.

[0167] (Second embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, one current sensor 120 is provided for each of the output line 13 and the output line 14, but this is not limited to this. In this embodiment, multiple current sensors 120 may be provided for at least one of the output line 13 and the output line 14.

[0168] <Power conversion circuit> FIG. 18 shows a power conversion circuit 4 according to this embodiment. The power conversion circuit 4 shown in FIG. 18 has a series current sensor 123 as the current sensor 120. Like current sensors 121 and 122, series current sensor 123 detects the phase currents flowing through windings 3U, 3V, and 3W. A series current sensor 123 is provided for each of the three phases. The series current sensors 123 include a series current sensor 123 that detects the current flowing through U-phase winding 3U, a series current sensor 123 that detects the current flowing through V-phase winding 3V, and a series current sensor 123 that detects the current flowing through W-phase winding 3W.

[0169] The series current sensor 123 is provided on at least one of the output line 13 and the output line 14. The series current sensor 123 is provided in series with at least one of the first current sensor 121 and the second current sensor 122 without passing through the windings 3U, 3V, and 3W. In this embodiment, the series current sensor 123 is provided on the output line 14, but is not provided on the output line 13. The series current sensor 123 is arranged in series with the second current sensor 122 on the output line 14.

[0170] Series current sensor 123 and second current sensor 122 are arranged in series without any intervening windings 3U, 3V, and 3W. Therefore, in the current path such as output line 14, losses such as resistance loss and heat loss in the current path are unlikely to occur between series current sensor 123 and second current sensor 122. Therefore, there is little difference between the detection results of series current sensor 123 and second current sensor 122.

[0171] The control unit 15 can detect an abnormality in the current sensors 122 and 123 using the detection results of the current sensors 122 and 123. The control unit 15 acquires the detection result of the second current sensor 122 as a second detection value and acquires the detection result of the series current sensor 123 as a series detection value. The control unit 15 calculates a series difference, which is the difference between the second detection value and the series detection value, for each of the multiple phases. The control unit 15 determines whether the series difference for each of the multiple phases is greater than a predetermined difference threshold. If the series difference is greater than the difference threshold, the control unit 15 determines that an abnormality in the detection value has occurred. If no abnormality has occurred in the current sensors 122 and 123, the series difference is approximately zero.

[0172] The control unit 15 calculates a current estimate for a phase in which an abnormal detection value has occurred. The current estimate is a value estimated by the control unit 15 using the second detection value and the series detection value for one of the multiple phases, based on the second detection value and the series detection value for the remaining phases. The control unit 15 calculates a second deviation value, which is the difference between the current estimate and the second detection value, and a series deviation value, which is the difference between the current estimate and the series detection value, for the phase in which an abnormal detection value has occurred. The control unit 15 determines that the larger of the second deviation value and the series deviation value is the abnormal deviation value. The control unit 15 determines that an abnormality has occurred in either the second current sensor 122 or the series current sensor 123, which was used to calculate the abnormal deviation value. For example, if the second deviation value is larger than the series deviation value, the control unit 15 determines that an abnormality has occurred in the second current sensor 122 in the phase in which an abnormal detection value has occurred.

[0173] <Power conversion module> As shown in FIG. 19 , the power conversion module 20 includes a second sensor unit 132 and a series sensor unit 133 as the sensor unit 130. The series sensor unit 133 provides the series current sensor 123. Both the second sensor unit 132 and the series sensor unit 133 are provided in the circuit unit 202. The shunt resistor unit 141 of the second sensor unit 132 and the shunt resistor unit 141 of the series sensor unit 133 are included in the O wiring 526. The O wiring 526 includes O wiring units 526A, 526B, and 526C in addition to the shunt resistor unit 141 of the second sensor unit 132 and the shunt resistor unit 141 of the series sensor unit 133. As in the first embodiment, the O wiring unit 526A is connected to the semiconductor elements 62H and 62L, and the O wiring unit 526B is connected to the O terminal 116.

[0174] The O wiring portion 526C is provided between the O wiring portion 526A and the O wiring portion 526B. The O wiring portion 526C is connected to the O wiring portion 526A via one of the shunt resistor portions 141 of the second sensor portion 132 and the series sensor portion 133, and is connected to the O wiring portion 526B via the other of the shunt resistor portions 141. For example, the shunt resistor portion 141 of the second sensor portion 132 electrically connects the O wiring portion 526A and the O wiring portion 526C. In the second sensor portion 132, the sensor pin 142 is provided in the O wiring portion 526A, and the sensor pin 143 is provided in the O wiring portion 526C. The shunt resistor portion 141 of the series sensor portion 133 electrically connects the O wiring portion 526B and the O wiring portion 526C. In the series sensor unit 133, the sensor pin 142 is provided on the O wiring part 526C, and the sensor pin 143 is provided on the O wiring part 526B. Note that the second sensor unit 132 and the series sensor unit 133 may share one of the sensor pin 142 and the sensor pin 143.

[0175] <Modification> In the present embodiment, an example has been shown in which the series current sensor 123 is provided on the output line 14, but this is not limiting. The series current sensor 123 may also be provided on the output line 13. For example, as shown in FIG. 20 , the series current sensor 123 is provided on the output line 13 but is not provided on the output line 14.

[0176] That is, in the present embodiment, an example has been shown in which the series sensor unit 133 is provided in the circuit unit 202, but this is not limiting. The series sensor unit 133 may be provided in the circuit unit 201. For example, as shown in FIG. 21 , the series sensor unit 133 is provided in the circuit unit 201, but is not provided in the circuit unit 202. The circuit unit 201 is provided with the first sensor unit 131 and the series sensor unit 133. In the circuit unit 201, the O wiring 516 has an O wiring portion 516C.

[0177] In circuit unit 201, O wiring portion 516A, O wiring portion 516B, and O wiring portion 516C have the same configuration as O wiring portion 526A, O wiring portion 526B, and O wiring portion 526C of circuit unit 202. For example, O wiring portion 516C is provided between O wiring portion 516A and O wiring portion 516B. O wiring portion 526C is connected to O wiring portion 516A via one shunt resistor portion 141 of first sensor portion 131 and series sensor portion 133, and is connected to O wiring portion 516B via the other shunt resistor portion 141.

[0178] In the present embodiment, an example has been described in which one of the first current sensor 121 and the second current sensor 122 and the series current sensor 123 are provided in the power conversion circuit 4, but this is not limiting. For example, each of the first current sensor 121, the second current sensor 122, and the series current sensor 123 may be provided in the power conversion circuit 4. As shown in FIG. 22 , the series current sensor 123 may be provided in series with one of the first current sensor 121 and the second current sensor 122. Note that the series current sensor 123 may be provided in both the output line 13 and the output line 14.

[0179] That is, in the present embodiment, an example has been shown in which one of the first sensor unit 131 and the second sensor unit 132 and the series sensor unit 133 are provided in the power conversion module 20, but this is not limiting. For example, each of the first sensor unit 131, the second sensor unit 132, and the series sensor unit 133 may be provided in the power conversion module 20. As shown in FIG. 23 , the series sensor unit 133 may be provided on one side of the first sensor unit 131 and the second sensor unit 132. Note that the series sensor unit 133 may be provided in both the circuit unit 201 and the circuit unit 202.

[0180] (Third embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the current sensor 120 is a shunt resistor type current sensor, but this is not limited to this. In this embodiment, the current sensor 120 may be formed to include a magnetic sensor such as a Hall sensor.

[0181] In the power conversion circuit 4, at least one current sensor 120 is formed to include a magnetic sensor. For example, the first current sensor 121 is a shunt resistor type current sensor, and the second current sensor 122 is a current sensor formed to include a magnetic sensor.

[0182] <Power conversion module> In the power conversion module 20, at least one sensor unit 130 provides a current sensor formed including a magnetic sensor. In this embodiment, the first sensor unit 131 provides a shunt resistor-type current sensor, and the second sensor unit 132 provides a current sensor including a magnetic sensor. As shown in FIG. 24 , the second sensor unit 132 has a sensor element 151 and a sensor case 152. The sensor element 151 is a sensor element such as a Hall element. The sensor case 152 houses the sensor element 151. The second sensor unit 132 is provided on at least one of the O terminal 116 and the O wiring 526. For example, the second sensor unit 132 is provided on the O terminal 116. In the second sensor unit 132, the sensor element 151 outputs a detection signal corresponding to the current flowing in an output conductor such as the O terminal 161.

[0183] (Fourth embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, two conductive members arranged side by side are connected by a shunt resistor 141, but this is not limited to this. In this embodiment, two conductive members arranged side by side may be connected by a shunt resistor 141.

[0184] <Power conversion module> In this embodiment, at least one sensor unit 130 forms a vertical shunt resistor. A sensor unit 130 forming a vertical shunt resistor is sometimes referred to as a vertical sensor unit 130. In the vertical sensor unit 130, two conductive members connected by a shunt resistor unit 141 are arranged vertically in the Z direction. In this embodiment, each of the first sensor unit 131 and the second sensor unit 132 is a vertical sensor unit 130.

[0185] 25 and 26, the sensor unit 130 has a sensor clip 145 in addition to the shunt resistor unit 141 and sensor pins 142 and 143. The sensor clip 145 has a configuration similar to that of the clip 90. For example, in a vertical sensor unit 130, one of the two conductive members is the sensor clip 145.

[0186] In the first sensor unit 131, the shunt resistor 141 and the sensor clip 145 are included in the O wiring 516. In the first sensor unit 131, the shunt resistor 141 is provided on one of the O wiring unit 516A and the O wiring unit 516B. The sensor clip 145 connects the other of the O wiring unit 516A and the O wiring unit 516B to the shunt resistor 141. The shunt resistor 141 is provided between the sensor clip 145 and one of the O wiring unit 516A and the O wiring unit 516B in the Z direction. In the first sensor unit 131, one of the sensor pin 142 and the sensor pin 143 may be provided on the sensor clip 145.

[0187] For example, in the first sensor unit 131, the shunt resistor 141 is provided on the O wiring unit 516B. The shunt resistor 141 is provided between the sensor clip 145 and the O wiring unit 516B in the Z direction. The sensor clip 145 is in a state of spanning between the shunt resistor 141 and the O wiring unit 516A. In the first sensor unit 131, the sensor pin 142 is provided on the sensor clip 145.

[0188] 25 , in the second sensor unit 132, the shunt resistor 141 and the sensor clip 145 are included in the O wiring 526. In the second sensor unit 132, the shunt resistor 141 is provided on one of the O wiring unit 526A and the O wiring unit 526B. The sensor clip 145 connects the other of the O wiring unit 526A and the O wiring unit 526B to the shunt resistor 141. The shunt resistor 141 is provided between the sensor clip 145 and one of the O wiring unit 526A and the O wiring unit 526B in the Z direction. In the second sensor unit 132, one of the sensor pin 142 and the sensor pin 143 may be provided on the sensor clip 145.

[0189] For example, in the second sensor unit 132, the shunt resistor 141 is provided on the O wiring unit 526B. The shunt resistor 141 is provided between the sensor clip 145 and the O wiring unit 526B in the Z direction. The sensor clip 145 is in a state of spanning between the shunt resistor 141 and the O wiring unit 526A. In the second sensor unit 132, the sensor pin 142 is provided on the sensor clip 145.

[0190] (Fifth embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the sensor unit 130 is provided on the O wiring 516, 526, but this is not limited to this. In this embodiment, at least one sensor unit 130 may be provided on the O terminal 115, 116.

[0191] <Power conversion module> In this embodiment, the first sensor unit 131 and the second sensor unit 132 are provided in the O terminals 115 and 116, respectively. As shown in FIGS. 27 and 28 , in the first sensor unit 131, a shunt resistor unit 141 is included in the O terminal 115. The O terminal 115 has an O terminal unit 115A and an O terminal unit 115B in addition to the shunt resistor unit 141. The O terminal unit 115A and the O terminal unit 115B are provided side by side in a direction perpendicular to the Z direction. The O terminal unit 115A is a portion of the O terminal 115 connected to the output bus bar 27out. The O terminal unit 115B is a portion connected to the O wiring 516.

[0192] In the first sensor unit 131, a shunt resistor unit 141 electrically connects the O terminal unit 115A and the O terminal unit 115B. The shunt resistor unit 141 is in a state of spanning the O terminal unit 115A and the O terminal unit 115B. The shunt resistor unit 141 is provided between the O terminal unit 115A and the O terminal unit 115B. In the first sensor unit 131, a sensor pin 142 is provided in the O terminal unit 115A, and a sensor pin 143 is provided in the O terminal unit 115B.

[0193] In the second sensor unit 132, a shunt resistor unit 141 is included in the O terminal 116. In addition to the shunt resistor unit 141, the O terminal 116 has an O terminal unit 116A and an O terminal unit 116B. The O terminal unit 116A and the O terminal unit 116B are arranged side by side in a direction perpendicular to the Z direction. The O terminal unit 116A is a portion of the O terminal 115 that is connected to the output bus bar 27out. The O terminal unit 116B is a portion that is connected to the O wiring 526.

[0194] In the second sensor unit 132, a shunt resistor 141 electrically connects the O terminal unit 116A and the O terminal unit 116B. The shunt resistor 141 is disposed across the O terminal unit 116A and the O terminal unit 116B. The shunt resistor 141 is disposed between the O terminal unit 116A and the O terminal unit 116B. In the second sensor unit 132, a sensor pin 142 is disposed in the O terminal unit 116A, and a sensor pin 143 is disposed in the O terminal unit 116B.

[0195] According to the present embodiment, the O terminal 115 electrically connected to the semiconductor elements 61H and 61L includes a shunt resistor 141. In this way, by using the O terminal 115, it is possible to realize a configuration in which the shunt resistor 141 is built into the power conversion module 20. In addition, the O terminal 116 electrically connected to the semiconductor elements 62H and 62L includes a shunt resistor 141. In this way, by using the O terminal 116, it is possible to realize a configuration in which the shunt resistor 141 is built into the power conversion module 20.

[0196] (Sixth embodiment) This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the current sensor 120 is provided on the output lines 13 and 14, but this is not limited to this. In this embodiment, the current sensor 120 may be provided on the power supply lines 5 and 6.

[0197] <Power conversion circuit> FIG. 29 shows a power conversion circuit 4 according to this embodiment. The power conversion circuit 4 shown in FIG. 28 has a switching current sensor 124 as the current sensor 120. The switching current sensor 124 detects the current flowing through the power lines 5 and 6. The switching current sensor 124 is provided on at least one of the power lines 5 and 6. For example, the switching current sensor 124 is provided on each of the wiring 5A and the wiring 6A. The power conversion circuit 4 also has at least one of a first current sensor 121 and a second current sensor 122. In this embodiment, the power conversion circuit 4 is provided with five current sensors 120. The five current sensors 120 include two switching current sensors 124 and three second current sensors 122.

[0198] The control unit 15 can detect an abnormality in the current sensors 122, 124 using the detection results of the current sensors 122, 124. The control unit 15 acquires the detection result of the switching current sensor 124 as a switching detection value in addition to the second detection value. The control unit 15 acquires five detection values. The five detection values ​​include three second detection values ​​and two switching detection values. The control unit 15 calculates an estimated value for each of the five detection values ​​by estimating the detection value. The estimated value is a value obtained by estimating an estimate for one detection value using the remaining four detection values.

[0199] The control unit 15 calculates the difference between the detected value and the estimated value for each of the five detected values ​​as a deviation value. The control unit 15 determines that a deviation value greater than a predetermined value is an abnormal deviation value. The control unit 15 determines that an abnormality has occurred in the current sensor used to calculate the abnormal deviation value among the five current sensors 120. For example, if the deviation value from the detected value of the switching current sensor 124 provided on the power line 5 is an abnormal deviation value, the control unit 15 determines that an abnormality has occurred in the switching current sensor 124 provided on the power line 5.

[0200] <Power conversion module> 30 , the power conversion module 20 has a second sensor unit 132 and switching sensor units 134P and 134N as the sensor unit 130. The switching sensor unit 134P provides the switching current sensor 124 provided on the power line 5. The switching sensor unit 134N provides the switching current sensor 124 provided on the power line 6. The switching sensor units 134P and 134N are provided on the conductor 532.

[0201] The switching sensor unit 134P is provided on the P wiring 534. In the switching sensor unit 134P, a shunt resistor unit 141 is included in the P wiring 534. In addition to the shunt resistor unit 141, the P wiring 534 has a P wiring unit 534A and a P wiring unit 534B. The P wiring unit 534A is a portion of the P wiring 534 that is connected to the changeover switch 81 via a clip 931. The P wiring unit 534B is a portion of the P wiring 534 that is connected to the P wiring 524 of the circuit unit 201 via a P bus bar 106.

[0202] In switching sensor unit 134P, shunt resistor unit 141 electrically connects P wiring unit 534A and P wiring unit 534B. Shunt resistor unit 141 connects two conductive members, P wiring unit 534A and P wiring unit 534B, which are arranged side by side. Shunt resistor unit 141 is bridged across P wiring unit 534A and P wiring unit 534B. One end of shunt resistor unit 141 is placed on the plate surface of P wiring unit 534A, and the other end is placed on the plate surface of P wiring unit 534B.

[0203] In switching sensor unit 134P, sensor pin 142 is provided on P wiring portion 534A, and sensor pin 143 is provided on P wiring portion 534B. Note that in switching sensor unit 134P, at least one of sensor pin 142 and sensor pin 143 may be provided on shunt resistor unit 141.

[0204] The switching sensor unit 134N is provided on the N wiring 535. In the switching sensor unit 134N, a shunt resistor unit 141 is included in the N wiring 535. The N wiring 5354 has an N wiring unit 535A and an N wiring unit 535B in addition to the shunt resistor unit 141. The N wiring unit 535A is a portion of the N wiring 535 that is connected to the changeover switch 82. The N wiring unit 535B is a portion of the N wiring 535 that is connected to the N wiring 525 of the circuit unit 201 via the N bus bar 108.

[0205] In the switching sensor unit 134N, a shunt resistor unit 141 electrically connects the N wiring unit 535A and the N wiring unit 535B. The shunt resistor unit 141 connects two conductive members, the N wiring unit 535A and the N wiring unit 535B, which are arranged side by side. The shunt resistor unit 141 is disposed across the N wiring unit 535A and the N wiring unit 535B. One end of the shunt resistor unit 141 is placed on the plate surface of the N wiring unit 535A, and the other end is placed on the plate surface of the N wiring unit 535B.

[0206] In the switching sensor unit 134N, the sensor pin 142 is provided on the N wiring portion 535A, and the sensor pin 143 is provided on the N wiring portion 535B. Note that in the switching sensor unit 134N, at least one of the sensor pin 142 and the sensor pin 143 may be provided on the shunt resistor unit 141.

[0207] (Other embodiments) The disclosure in this specification and drawings, etc. is not limited to the exemplified embodiments. The disclosure encompasses the exemplified embodiments and modifications thereto by those skilled in the art. For example, the disclosure is not limited to the combinations of parts and / or elements shown in the embodiments. The disclosure can be implemented in various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure encompasses the omission of parts and / or elements from the embodiments. The disclosure encompasses the substitution or combination of parts and / or elements between one embodiment and another embodiment. The disclosed technical scope is not limited to the description of the embodiments. Some disclosed technical scopes are defined by the claims, and should be interpreted as including all modifications within the meaning and scope equivalent to the claims.

[0208] The disclosure in the specification, drawings, etc. is not limited by the claims. The disclosure in the specification, drawings, etc. encompasses the technical ideas described in the claims, and extends to more diverse and broader technical ideas than the technical ideas described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification, drawings, etc. without being bound by the claims.

[0209] When an element or layer is referred to as being "on," "coupled," "connected," or "bonded," it may be directly on, coupled, connected, or bonded to the other element or layer, and intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly coupled," "directly connected," or "directly bonded" to another element or layer, no intervening elements or layers are present. Other language used to describe relationships between elements should be construed in a similar manner (e.g., "between" vs. "directly between," "adjacent" vs. "directly adjacent," etc.).

[0210] As used in this specification, the term "and / or" includes any and all combinations of one or more of the associated listed items, i.e., reference to A and / or B means at least one of A and B, and may include A only, B only, or both A and B.

[0211] Spatially relative terms such as "inside," "outside," "back," "below," "low," "top," "top," and the like are used herein to facilitate the description of one element or feature's relationship to other elements or features, as illustrated. Spatially relative terms may be intended to encompass different orientations of the device during use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures were turned over, elements described as "below" or "directly below" other elements or features would then be oriented "above" the other elements or features. Thus, the term "bottom" can encompass both an orientation of top and bottom. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used in this specification would be interpreted accordingly.

[0212] Although an example has been shown in which inverter 8 is provided on substrate 51 and inverter 9 is provided on substrate 52, the present invention is not limited to this. For example, some of the three phases of the inverter may be provided on the first substrate, and the other part of the three phases may be provided on the second substrate. A changeover switch 80 may be provided for each phase. For example, changeover switches 80 corresponding to two phases of inverter 9 may be provided on substrate 52, and a changeover switch 80 corresponding to the remaining phase of inverter 9 may be provided on substrate 53. In either configuration, power conversion circuit elements including semiconductor device 60 and changeover switches 80 are arranged on a common support member.

[0213] In each of the above embodiments, whether the sensor units 131 and 132 are provided in the circuit unit 201 or the circuit unit 202 may differ for multiple phases. The sensor units 131 and 132 may be provided in the circuit unit 201 for two of the three phases, and in the circuit unit 202 for the remaining phase. For example, the sensor units 131 and 132 may be provided in the circuit unit 201 for the U phase and the V phase, and in the circuit unit 202 for the W phase.

[0214] In each of the above embodiments, the sensor units 131 and 132 may be provided in at least one of the three phases. For example, the sensor units 131 and 132 may be provided in the circuit units 201 and 202 in the U phase, but may not be provided in the circuit units 201 and 202 in the V and W phases.

[0215] In each of the above embodiments, the drive system 1 may have a 3×n rotating electric machine 3. This drive system 1 has a 3×n power conversion circuit 4 to drive the 3×n rotating electric machine 3, where n is a natural number. For example, in the drive system 1, the 3×n power conversion circuit 4 is realized by connecting n three-phase inverters 8, 9 in parallel to the n×3-phase rotating electric machine 3.

[0216] In each of the above embodiments, the wiring 5A, 6A may directly or indirectly connect the inverter 8 and the inverter 9. For example, the wiring 5A, 6A may electrically connect the inverter 9 and the DC power supply 2 without passing through the inverter 8. In this configuration, the wiring 5A, 6A also indirectly connects the inverter 8 and the inverter 9 via the DC power supply 2.

[0217] In each of the above embodiments, in the power conversion device 18, the sensor unit 130 may not be included in the power conversion module 20. For example, the sensor unit 130 may be provided on the output bus bar 27out, and may not be included in the power conversion module 20.

[0218] (Disclosure of technical ideas) This specification discloses multiple technical ideas described in the following multiple clauses. Some clauses may be written in a multiple dependent form, with the subsequent clause referring to the preceding clause as an alternative. Furthermore, some clauses may be written in a multiple dependent form, referring to another multiple dependent clause. These multiple dependent clauses define multiple technical ideas.

[0219] (Technical thought 1) A power conversion module (20) that converts power supplied to a rotating electric machine (3), a first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via an output path (13, 14); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via the output path; an output conductor portion (115, 116, 516, 526) forming at least a part of the output path; a shunt resistor portion (141) included in the output conductor portion and forming a shunt resistor for detecting a current flowing through the output conductor portion; a support member (30) having one surface (301); Equipped with The power conversion module, wherein the first semiconductor element, the second semiconductor element, and the shunt resistor portion are arranged on the common surface.

[0220] (Technical thought 2) A power conversion module according to Technical Idea 1, comprising a housing (40) arranged on the one surface and accommodating the first semiconductor element, the second semiconductor element, and the shunt resistor portion.

[0221] (Technical Thought 3) a frame (41) disposed on the one surface and constituting, together with the support member, a housing space for the first semiconductor element, the second semiconductor element, and the shunt resistor; a sealant (43) filled in the accommodation space and sealing the first semiconductor element, the second semiconductor element, and the shunt resistor portion; The power conversion module according to Technical Idea 1 or 2, comprising:

[0222] (Technical Thought 4) The support member is a cooler having a flow path (33) therein, The power conversion module according to any one of Technical Ideas 1 to 3, wherein the first semiconductor element, the second semiconductor element, and the shunt resistor portion are arranged along the flow path via the one surface.

[0223] (Technical Thought 5) The power conversion module according to Technical Concept 4, wherein at least a portion of the shunt resistor portion is provided at a position aligned with the flow path in a direction perpendicular to the one surface.

[0224] (Technical Thought 6) a first substrate wiring (516) that is included in a first substrate (51) on which the first semiconductor element is provided and that forms a part of the output conductor portion; a second substrate wiring (526) that is included in a second substrate (52) on which the second semiconductor element is provided and that forms a part of the output conductor portion; Equipped with The power conversion module according to any one of Technical Concepts 1 to 5, wherein the shunt resistor portion is included in at least one of the first substrate wiring and the second substrate wiring.

[0225] (Technical Thought 7) a first bus bar (115) electrically connected to the first semiconductor element to form a part of the output path, for connecting the first inverter to the one end; a second bus bar (116) electrically connected to the second semiconductor device to form a part of the output path, for connecting the second inverter to the other end; Equipped with The power conversion module according to any one of Technical Concepts 1 to 6, wherein the shunt resistor portion is included in at least one of the first bus bar and the second bus bar.

[0226] (Technical Thought 8) The power conversion module according to any one of Technical Ideas 1 to 7, further comprising a current detection unit (130) having the shunt resistor unit and detecting a current flowing through the shunt resistor unit.

[0227] (Technical Thought 9) A power conversion module (20) that converts power supplied to a rotating electric machine (3), a first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via an output path (13, 14); second semiconductor elements (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via the output path; an output conductor portion (115, 116, 516, 526) forming at least a part of the output path; a current detection unit (130) for detecting a current flowing through the output conductor portion; a support member (30) having one surface (301); Equipped with The power conversion module, wherein the first semiconductor element, the second semiconductor element, and the current detection unit are arranged on the common surface.

[0228] (Technical Thought 10) A power conversion device (18) including a power conversion module (20) for converting power supplied to a rotating electric machine (3) by the power conversion module, a first semiconductor element (61H, 61L) included in the power conversion module and constituting a first inverter (8) connected to one end of a winding of the rotating electric machine via an output path (13, 14); a second semiconductor element (62H, 62L) included in the power conversion module and constituting a second inverter (9) connected to the other end of the winding via the output path; an output conductor portion (115, 116, 516, 526) forming at least a part of the output path; a shunt resistor portion (141) included in the output conductor portion and forming a shunt resistor for detecting a current flowing through the output path; A power conversion device comprising: [Explanation of symbols]

[0229] 1...drive system, 2...DC power supply, 3...rotating electric machine, 3U, 3V, 3W...winding, 4...power conversion circuit, 8, 9...inverter, 13, 14...output line, 18...power conversion device, 20...power conversion module, 30...cooler, 301...one surface, 33...flow path, 40...housing, 41...frame body, 43...sealing body, 51, 52...substrate, 516, 526...O wiring, 61H, 61L, 62H, 62L...semiconductor element, 115, 116...O terminal, 130...sensor section, 141...shunt resistor section.

Claims

1. A power conversion module (20) that converts the power supplied to a rotating electric machine (3), A first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of the winding of the rotating electric machine via output paths (13, 14), A second semiconductor element (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via the output path, Output conductor portions (115, 116, 516, 526) that form at least a part of the output path, A shunt resistor (141) is included in the output conductor and forms a shunt resistor for detecting the current flowing through the output conductor, A support member (30) having one surface (301), Equipped with, The first semiconductor element, the second semiconductor element, and the shunt resistor are arranged on the same surface as each other. The first semiconductor element and the second semiconductor element each have an upper arm element (61H, 62H) connected to the high-potential power line (5) and a lower arm element (61L, 62L) connected to the low-potential power line (6). A power conversion module in which the shunt resistors are arranged along one plane on the upper arm element in a first direction (Y) and along one plane on the lower arm element in a second direction (X) perpendicular to the first direction.

2. The power conversion module according to claim 1, comprising a housing (40) arranged on the aforementioned surface and housing the first semiconductor element, the second semiconductor element, and the shunt resistor.

3. A frame (41) is arranged on the aforementioned surface and, together with the support member, constitutes a housing space for the first semiconductor element, the second semiconductor element, and the shunt resistor; A sealing body (43) is filled into the aforementioned housing space and seals the first semiconductor element, the second semiconductor element, and the shunt resistor portion, A power conversion module according to claim 1 or 2, comprising:

4. The support member is a cooler having a flow path (33) inside, The power conversion module according to claim 1 or 2, wherein the first semiconductor element, the second semiconductor element, and the shunt resistor are arranged along the flow path with respect to one surface.

5. The power conversion module according to claim 4, wherein at least a portion of the shunt resistor is provided in a position aligned with the flow path in a direction perpendicular to the one surface.

6. The first substrate wiring (516) is included in the first substrate (51) on which the first semiconductor element is provided and forms a part of the output conductor portion, The second substrate wiring (526) is included in the second substrate (52) on which the second semiconductor element is provided and forms a part of the output conductor portion, Equipped with, The power conversion module according to claim 1 or 2, wherein the shunt resistor is included in at least one of the first substrate wiring and the second substrate wiring.

7. A first busbar (115) is electrically connected to the first semiconductor element so as to form a part of the output path and for connecting the first inverter to one end, A second busbar (116) is electrically connected to the second semiconductor element to form a part of the output path and connects the second inverter to the other end, Equipped with, The power conversion module according to claim 1 or 2, wherein the shunt resistor is included in at least one of the first busbar and the second busbar.

8. The power conversion module according to claim 1 or 2, further comprising a shunt resistor and a current detection unit (130) for detecting the current flowing through the shunt resistor.

9. A power conversion module (20) that converts the power supplied to a rotating electric machine (3), A first semiconductor element (61H, 61L) constituting a first inverter (8) connected to one end of the winding of the rotating electric machine via output paths (13, 14), A second semiconductor element (62H, 62L) constituting a second inverter (9) connected to the other end of the winding via the output path, Output conductor portions (115, 116, 516, 526) that form at least a part of the output path, A current detection unit (130) for detecting the current flowing through the output conductor, A support member (30) having one surface (301), Equipped with, The first semiconductor element, the second semiconductor element, and the current detection unit are arranged on a common surface. The first semiconductor element and the second semiconductor element each have an upper arm element (61H, 62H) connected to the high-potential power line (5) and a lower arm element (61L, 62L) connected to the low-potential power line (6). A power conversion module in which the current detection units are arranged on the upper arm element along one plane in a first direction (Y) and on the lower arm element along one plane in a second direction (X) perpendicular to the first direction.

10. A power conversion device (18) comprising a power conversion module (20) that converts the power supplied to a rotating electric machine (3) using the power conversion module, The first semiconductor elements (61H, 61L) included in the power conversion module and constituting a first inverter (8) connected to one end of the winding of the rotating electric machine via output paths (13, 14), A second semiconductor element (62H, 62L) is included in the power conversion module and constitutes a second inverter (9) connected to the other end of the winding via the output path, Output conductor portions (115, 116, 516, 526) that form at least a part of the output path, A shunt resistor (141) is included in the output conductor portion and forms a shunt resistor for detecting the current flowing through the output path, Equipped with, The first semiconductor element and the second semiconductor element each have an upper arm element (61H, 62H) connected to the high-potential power line (5) and a lower arm element (61L, 62L) connected to the low-potential power line (6). A power conversion device in which the shunt resistors are arranged in a first direction (Y) along the upper arm element and in a second direction (X) perpendicular to the first direction along the lower arm element.

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