Semiconductor device

Abstract

To provide a semiconductor device with a novel structure.SOLUTION: A semiconductor device includes a silicon substrate, and a device provided over the silicon substrate. The device includes a transistor and a conductor. The transistor has a metal oxide in a channel formation region. The silicon substrate is given conductivity. The conductor is electrically connected to a drain of the transistor and the silicon substrate through an opening provided in the device. Through the silicon substrate, the drain of the transistor can dissipate heat efficiently.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] Metal oxides that exhibit semiconducting properties, known as oxide semiconductors, are attracting attention as new semiconductors. The development of transistors using oxide semiconductors is progressing day by day. For example, In the following Patent Document 1, a transistor using the oxide semiconductor is used as a power transistor. This paper discloses a DC-DC converter configuration that can be applied to the above. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] US Patent Application Publication No. 2011 / 0254523 Summary of the Invention [Problem to be solved by the invention]

[0004] Oxide semiconductors such as In-Ga-Zn oxide (also written as IGZO) are made of silicon oxide. The thermal conductivity is about 1 / 100 of that of an insulating layer such as a capacitor. Heat generated by self-heating when a large current flows between the source and drain of a transistor Due to self-heating, transistors can experience fluctuations in electrical characteristics or element degradation. This may cause a decrease in reliability.

[0005] An object of one embodiment of the present invention is to provide a semiconductor device or the like having a novel structure. An object of one embodiment of the present invention is to provide a semiconductor device or the like that has a highly reliable and novel structure. Another embodiment of the present invention is to prevent a change in electrical characteristics of a transistor due to self-heating. The present invention provides a semiconductor device or the like having a novel configuration that can reduce the influence of the semiconductor device on the operation or deterioration of the element. One of our goals is to provide

[0006] Note that the problems of one embodiment of the present invention are not limited to the above-listed problems. This does not preclude the existence of other problems. Problems not mentioned in this section are problems that a person skilled in the art would be able to solve by understanding the specification or can be derived from the descriptions in the drawings, etc., and can be extracted appropriately from these descriptions. One aspect of the present invention is to achieve at least the above-listed and / or other objects. It solves one problem. [Means for solving the problem]

[0007] One aspect of the present invention is a semiconductor device including a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor, and the transistor includes a channel forming region. The silicon substrate is provided with a conductive material, and the conductive material is provided in the device. Electrical current is applied to the drain of the transistor and the silicon substrate through the opening. The semiconductor device is electrically connected to the semiconductor device.

[0008] One aspect of the present invention is a semiconductor device comprising: a silicon substrate; a device provided above the silicon substrate; a first extraction electrode and a second extraction electrode, and the device comprises a transistor and a conductor. the transistor has a metal oxide in a channel formation region; and the silicon substrate The conductive material is connected to the transistor through an opening in the device. and the silicon substrate. The first extraction electrode is , electrically connected to the conductor connected to the source of the transistor, and the second extraction electrode , and is electrically connected to a silicon substrate.

[0009] In one embodiment of the present invention, the first extension electrode is connected to the transistor via a metal wiring. Preferably, the semiconductor device is electrically connected to a conductor that is connected to the source.

[0010] In one embodiment of the present invention, the second extraction electrode is directly connected to the silicon substrate. A conductor device is preferred.

[0011] In one embodiment of the present invention, the silicon substrate is provided with p-type conductivity. Positioning is preferred.

[0012] In one aspect of the present invention, the silicon substrate and the device are covered with a resin layer, and the resin layer The semiconductor device is preferably provided in a housing.

[0013] In one aspect of the present invention, a heat sink is provided on a silicon substrate via an insulating layer. A semiconductor device is preferred.

[0014] Other aspects of the present invention will be described in the following embodiments and is shown in the drawings. [Effects of the Invention]

[0015] One embodiment of the present invention can provide a semiconductor device or the like with a novel structure. One embodiment of the present invention can provide a highly reliable semiconductor device or the like having a novel structure. Another embodiment of the present invention is to prevent fluctuations in the electrical characteristics of a transistor due to self-heating or fluctuations in the electrical characteristics of an element. It is possible to provide a semiconductor device or the like having a novel configuration that can reduce the influence of deterioration. do.

[0016] The effects of one embodiment of the present invention are not limited to the effects listed above. This does not preclude the existence of other effects. Other effects may be affected by this item, as described below. The effects not mentioned in this section are obvious to a person skilled in the art from the description or can be derived from the descriptions in the drawings, etc., and can be extracted appropriately from these descriptions. One aspect of the present invention has at least the above-listed effects and / or other effects. Therefore, one aspect of the present invention is to provide the above-listed However, there are cases where the effect is not significant. [Brief explanation of the drawings]

[0017] [Figure 1] 1A and 1B are a perspective view and a cross-sectional view illustrating one embodiment of the present invention. [Figure 2] 2A, 2B, and 2C are top views illustrating one embodiment of the present invention. [Figure 3] 3A and 3B are a perspective view and a circuit diagram illustrating one embodiment of the present invention. [Figure 4] 4A and 4B are schematic cross-sectional views illustrating one embodiment of the present invention. [Figure 5] 5A, 5B, and 5C are cross-sectional views illustrating an embodiment of the present invention. [Figure 6] 6A, 6B, and 6C are cross-sectional views illustrating one embodiment of the present invention. [Figure 7] FIG. 7 is a cross-sectional view illustrating one embodiment of the present invention. [Figure 8] 8A, 8B, 8C, and 8D are top views illustrating one embodiment of the present invention. [Figure 9]9A, 9B, and 9C are circuit diagrams, graphs, and block diagrams illustrating one embodiment of the present invention. [Figure 10] FIG. 10 is a schematic cross-sectional view illustrating one embodiment of the present invention. [Figure 11] 11A and 11B are schematic cross-sectional views illustrating one embodiment of the present invention. [Figure 12] 12A and 12B are schematic cross-sectional views illustrating one embodiment of the present invention. [Figure 13] 13A and 13B are schematic cross-sectional views illustrating one embodiment of the present invention. [Figure 14] FIG. 14 is a diagram showing an electronic device. DETAILED DESCRIPTION OF THE INVENTION

[0018] The following describes an embodiment of the present invention. However, one embodiment of the present invention is not limited to the following description. The present invention is not limited to the above, and various modifications and variations in form and detail may be made without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that the present invention can be modified as follows. However, the present invention should not be construed as being limited to the description of the following embodiments.

[0019] In this specification, the ordinal numbers "first," "second," and "third" refer to the constituent elements. The numbers are added to avoid confusion and do not limit the number of components. The order of the components is not limited. The element referred to as "first" in one embodiment may be used in other embodiments or in the claims. In addition, for example, the second component may be the component referred to as "second" in the specification. A component referred to as "first" in one embodiment may be used in other embodiments, or It may be omitted in the claims.

[0020] In the drawings, elements that are the same or have similar functions, elements that are made of the same material, or In some cases, elements formed at the same time may be given the same reference numerals, and repeated explanations thereof will be omitted. This may occur.

[0021] In this specification, for example, the power supply potential VDD is abbreviated as potential VDD, VDD, etc. This may be due to the presence of other components (e.g., signals, voltages, circuits, elements, electrodes, wiring, etc.). The same applies to (etc.).

[0022] Also, when the same reference numeral is used for multiple elements, particularly when it is necessary to distinguish between them, The code is followed by an identifying code such as "_1", "_2", "[n]", or "[m,n]". For example, the second wiring GL is written as wiring GL[2].

[0023] (Embodiment 1) A structural example of a semiconductor device according to one embodiment of the present invention will be described with reference to FIGS.

[0024] The semiconductor device in this embodiment is a power semiconductor device designed to pass a large current through a load. A power transistor is a device that contains a semiconductor. The amount of current flowing between the electrode connected to the source and the electrode connected to the drain and the applied The voltage that is applied is large, and it handles a much larger amount of power than a display device or logic circuit. A transistor.

[0025] In the semiconductor device 10 shown in FIG. 1A, a device 11 (element layer and The device 11 is a perspective view of a configuration in which a plurality of transistors (sometimes referred to as a transistor) are provided. The transistors 23A to 23D, the conductors 21A and 21B, and the conductors 22A and 22B are The device 11 also has a plurality of openings 24A and 24B that reach the silicon substrate 12. Has.

[0026] The conductors 21A and 21B are electrodes connected to the sources of the transistors 23A to 23D. In the drawing, the conductors 21A and 21B are shown with an "S" indicating the source side. In the configuration shown in FIG. 1A, two electrodes are connected to the source. However, it can be singular or three or more.

[0027] The conductors 22A and 22B are electrodes connected to the drains of the transistors 23A to 23D. In the drawing, the conductors 22A and 22B are labeled with "D" indicating the drain side. In the configuration shown in FIG. 1A, two electrodes are connected to the drain. However, it may be singular or three or more.

[0028] Although not shown in FIG. 1A, the transistors 23A to 23D each have a gate, a transistor The transistor 2 has a region that functions as a channel forming region, a drain, or a source. 3A is set between the conductor 21A connected to the source and the conductor 22A connected to the drain. The transistor 23B is connected to the source of the conductor 21A. and the conductor 22B connected to the drain. The capacitor 23C is connected between the conductor 21B connected to the source and the conductor 22A connected to the drain. The transistor 23D is a transistor provided in the conductor 2 connected to the source. It is a transistor provided between the drain of the transistor 1B and the conductor 22B connected to the drain.

[0029] The transistors 23A to 23D are connected between the conductors 21A and 21B and the conductors 22A and 22B. A plurality of transistors are arranged between the source and drain of the transistors in parallel. By arranging the transistors in parallel, the conductors 21A and 21B and the conductors 22A and 22B In addition, the channel length can be reduced to 1 μm or less. Therefore, the transistors 23A to 23D can be configured using the transistors Therefore, variations in transistor characteristics can be reduced.

[0030] The transistors 23A to 23D each have a semiconductor layer including a channel formation region made of an oxide semiconductor. The transistor is called an OS transistor. Unless otherwise specified, OS transistors are Therefore, the oxide semiconductor has a low carrier concentration. By doing so, the current that flows between the source and drain when the transistor is off (off current, or leakage current) The OS transistor will be described in more detail later. Describe.

[0031] OS transistors can be freely arranged by stacking them on a silicon substrate, etc. Furthermore, the OS transistor has a channel formation region. Manufacturing equipment similar to that for transistors whose semiconductor layer is made of silicon (Si transistors) Since it can be manufactured using the above, it can be manufactured at low cost.

[0032] In addition to the gate electrode, source electrode, and drain electrode, the OS transistor also has a buffer If a back gate electrode is included, it can be a four-terminal semiconductor element. The input and output of signals flowing between the source and drain are controlled independently according to the voltage applied to the gate electrode. Therefore, it is possible to design circuits using the same concept as LSI. In addition, OS transistors can perform the same functions as Si transistors in high-temperature environments. Specifically, the temperature is 100°C or higher and 200°C or lower, preferably The ratio of on-current to off-current is large even at high temperatures of 125°C to 150°C. Therefore, a good switching operation can be performed.

[0033] The silicon substrate 12 is a silicon substrate that has been given electrical conductivity. It is a silicon substrate into which impurity elements are introduced to give it n-type or p-type conductivity. The silicon substrate 12 is a silicon substrate imparted with p-type conductivity, and thus has n-type conductivity. The silicon substrate 12 has a higher thermal conductivity than a silicon substrate to which a metal is added. The semiconductor device may have a configuration including transistors for configuring a logic circuit.

[0034] By providing the conductors in the openings 24A and 24B, the conductors 22A and 22B and the silicon The drains of the transistors 23A to 23D are connected to the substrate 12. 2A, 22B and the conductors provided in the openings 24A, 24B. 2. The drains of the transistors 23A to 23D are connected to the silicon substrate 2. The connection to the plate 12 may be via conductors 22A and 22B, or through openings 24A and 24B. Alternatively, they may be directly connected via a conductor provided on 24B.

[0035] The semiconductor device 10 having the configuration of FIG. 1A includes transistors 23A to 23B, which are OS transistors. The heat generated on the drain side due to the current flowing in 3D is suppressed by the The heat can be dissipated to the silicon substrate 12 through the conductor in the opening. Therefore, the fluctuation of the electrical characteristics of the transistors 23A to 23D due to heat generation or the deterioration of the elements can be prevented. This can suppress the noise and provide a semiconductor device 10 with excellent reliability.

[0036] FIG. 1B is a schematic cross-sectional view of the semiconductor device 10 taken along the cross section AB in FIG. 1A. In the cross-sectional view of FIG. 1B, a device 11 is formed on a silicon substrate 12, similar to FIG. 1A. The device 11 is provided with transistors 23A and 23B. The transistor 23A has a gate electrode 26A and an oxide layer 25A that functions as a semiconductor layer. The transistor 23B includes a gate electrode 26B and an oxide layer 2 that functions as a semiconductor layer. 5B. In other drawings, the oxide layer 25A and the oxide layer 25B are the oxide layer 2 It may be described as 8.

[0037] In the transistor 23A, the oxide layer 25A is connected to the conductor 21A. The oxide layer 25A is connected to the conductor 22A. The current flowing through the transistor 23A is It flows from the in (D) side to the source (S) side (shown by the thin arrow in the figure). In the layer 25A, electrons are accelerated in the drain-side region 27A, causing self-heating. The region 27A is connected to the silicon substrate via the conductor 22A and the conductor provided in the opening 24A. The heat is dissipated to the plate 12 side (shown by the thick dotted arrow in the drawing).

[0038] In the transistor 23B, the oxide layer 25B is connected to the conductor 21A. The oxide layer 25B is connected to the conductor 22B. The current flowing through the transistor 23B is It flows from the in (D) side to the source (S) side (shown by the thin arrow in the figure). In the layer 25B, electrons are accelerated in the drain-side region 27B, causing self-heating. The region 27B is connected to the silicon substrate via the conductor 22B and the conductor provided in the opening 24B. The heat is dissipated to the plate 12 side (shown by the thick dotted arrow in the drawing).

[0039] The transistors 23C and 23D have the same structure as the transistors 23A and 23B. Therefore, the heat generated on the drain side of the transistor is transferred to the conductors 22A and 22B and the open circuit. The heat can be dissipated to the silicon substrate 12 through the conductors provided at the openings 24A and 24B. can.

[0040] As described with reference to FIGS. 1A and 1B, in the structure of the semiconductor device according to one embodiment of the present invention, The plate and the OS transistor are stacked to open the heat generated on the drain side of the transistor. The heat is dissipated to the silicon substrate through the conductor provided at the opening. This can function as a heat sink. Alternatively, element degradation can be suppressed, resulting in a semiconductor device with excellent reliability.

[0041] Next, FIG. 2A shows the upper part for explaining the configuration of the device 11 described in FIGS. 1A and 1B. In the top view of FIG. 2A, the conductors 21A and 21B and the conductors 22A and 22B are Transistors 23A to 23D for controlling the electrical connections between the The drains of the transistors 23A to 23D and the silicon substrate 12 (as shown in the figure) The openings 24A and 24B in which conductors for connecting the conductors 22A and 22B are provided are 2B. , 21B and the conductors 22A, 22B function as electrodes for connecting with external wiring. It is possible.

[0042] The upper surfaces of the conductors 21A and 21B and the conductors 22A and 22B, which function as electrodes, are The shape is such that the distance from the external connection wiring to each transistor is equal. For example, a circular shape or a triangular shape as shown in FIG. 2A is preferable. By adopting this configuration, the conductors 21A and 21B can be easily connected by wire bonding or the like. and wiring resistance from the wiring connected to the conductors 22A and 22B to the plurality of transistors. can be made uniform.

[0043] FIG. 2B shows an enlarged view of the area where the transistor 23B shown in FIG. 2A is provided. 2B shows a top view of the conductor 21A and the conductor 22B. A plurality of island-shaped oxide layers 28 are provided between the interdigitated electrodes. The transistor 23B is a pair of transistors 23B_1 and 23B_2 provided at both ends of the conductor 22B. It can be expressed as _2.

[0044] In FIG. 2C, the electrodes represented by conductor 21A and conductor 22B are shown by dotted lines. In C, a conductor 26 functioning as a gate electrode is provided so as to overlap the island-shaped oxide layer 28. Illustrated are B_1, 26B_2, and a conductor 29 that serves as a back gate electrode. .

[0045] 3A, the transistor 23B (transistor 23C) in the X direction and the Y direction shown in FIG. 1 is a perspective view of a transistor applicable to transistors 23A to 23D (also referred to as transistor 23). 3A, the conductor 26B_1 is provided so as to overlap the island-shaped oxide layer 28. 3A, the conductor 29 is used as a back gate electrode. In FIG. 3A, the conductor 26B_1 is used as the top gate electrode. In FIG. 3A, the conductor 26B_1 and the island-like conductor 29 are shown as TGE. One of the oxide layers 28 is illustrated as terminal "S" and the other is illustrated as terminal "D." The transistor 23 shown in FIG. 3A can be represented as the symbol shown in FIG. 3B. Note that the structure of the transistor will be described in detail in Embodiment 2.

[0046] 4A, 4B, and 5A to 5C, the semiconductor device 10 described in FIG. 1B is A modified example of the schematic cross-sectional view of FIG.

[0047] In the semiconductor device 10A shown in FIG. 4A, similarly to FIG. 1B, an external extraction electrode or an external The figure shows an example of a configuration in which electrodes connected to metal wiring in the device 11 are arranged on the top surface of the device 11. In the configuration example of 4A, a conductor 21A connected to the sources of transistors 23A and 23B, Conductors 22A and 22B connected to the drains of transistors 23A and 23B, respectively, are The two electrodes can be arranged on the same side, i.e., the top surface of the sensor 11.

[0048] The semiconductor device 10B shown in FIG. 4B has a different configuration from that shown in FIG. 4A, and has an external extraction electrode. Alternatively, an example of a configuration in which electrodes connected to external metal wiring are disposed on the upper surface of the device 11 is shown. In the configuration example of FIG. 4B, the conductor 2 connected to the sources of the transistors 23A and 23B 1A is connected to a conductor 31A provided on an electrode layer 30 on the device 11. The drains of the transistors 23A and 23B are connected to the conductor 22A or 22B and the silicon substrate. The electrode layer 30 is connected to the conductor 31B on the upper layer of the device 11 via the plate 12. In the semiconductor device 10B shown in FIG. 4B, the upper surface of the device 11 is The electrodes can be placed on the same side.

[0049] Unlike the semiconductor device 10C shown in FIG. 4A and FIG. 4B, the semiconductor device 10C shown in FIG. 5A has a structure in which an external extraction voltage is FIG. 1 shows an example of a configuration in which the silicon substrate 12 also functions as an electrode connected to a metal wiring or an external wiring. In the example configuration of FIG. 5A, the conductors connected to the sources of the transistors 23A and 23B are a conductor 31A provided on an electrode layer 30 on the upper layer of the device 11 via a conductor 21A; The device is connected to the drains of the transistors 23A and 23B via the conductors 22A and 22B. The silicon substrate 12 below the seat 11 can be placed on different sides. By using the silicon substrate 12 as an electrode, it is possible to provide an external extraction electrode or This allows for a larger area to bond metal wiring etc. that is ear-bonded, This makes it easier to make electrical connections.

[0050] The semiconductor device 10D shown in FIG. 5B has a configuration different from that shown in FIG. 5A, in which a transistor 23 A, 23B, and an electrode layer on the top of the device 11 via a conductor 21A connected to the sources of the 30 and the drains of the transistors 23A and 23B. The conductors 22A and 22B below the oxide layer are disposed on the opposite sides of the silicon substrate 12. By using the silicon substrate 12 as an electrode, it is possible to easily connect the silicon substrate 12 to the outside. It can be easily connected to the lead-out electrode or the metal wiring to be wire-bonded. In addition, by arranging the conductors 22A and 22B under the oxide layer, the path for heat dissipation is shortened. It is possible.

[0051] In the semiconductor device 10D shown in FIG. 5B, the silicon substrate 12 is connected to an external lead electrode. Although the drawing shows a configuration in which the wire is connected to a metal wiring by wire bonding, it may be configured in another way. For example, as in the semiconductor device 10E of FIG. 5C, a conductor 3 provided on the electrode layer 30 may be 1A, 31B, etc., electrodes can be arranged on the same surface, i.e., the top surface of the device 11. By adopting this configuration, the configuration of FIG. 5B can be performed in the same manner as in FIG. 4A. Electrodes can be placed on the same surface, which is the top surface.

[0052] An example of a cross-sectional view of an electronic component when the semiconductor device 10 described above is mounted in a housing is shown below. 6A to 6C. Regarding an electronic component having a semiconductor device 10 in a housing, In this case, it is a device that has a transistor that utilizes the semiconductor characteristics, so it is sometimes called a semiconductor device. There is a match.

[0053] In the cross-sectional view of the electronic component 100A shown in FIG. 6A, a semiconductor device 10 is disposed in a housing 106. , metal wiring 104A, 104B, extraction electrodes 105A, 105B and resin layer 103 The semiconductor device 10 is fixed to a substrate 101 by an adhesive layer 102 in a housing 106. The semiconductor device 10 shown in FIG. 6A is the same as the device 11 shown in FIGS. 4A and 4B. The substrate 101 and the adhesive layer 102 are made of silicon. To improve the heat dissipation of the board, the material must have a higher thermal conductivity than the surrounding constituent materials. is preferred.

[0054] The semiconductor device 10 is covered with a resin layer 103 inside a housing 106. The extraction electrode 105A is , and is connected to an electrode on the top surface of the device of the semiconductor device 10 via a metal wiring 104A. The extraction electrode 105B is connected to the device of the semiconductor device 10 via the metal wiring 104B. It is connected to electrodes on the top surface of the chair.

[0055] In the cross-sectional view of electronic component 100B shown in FIG. 6B, semiconductor device 10 is disposed in housing 106. , metal wiring 104A, extraction electrodes 105A and 105B, and a resin layer 103. The semiconductor device 10 is fixed to a substrate 101 by an adhesive layer 102 in a housing 106. The semiconductor device 10 shown in FIG. 5B is a silicon substrate having a top surface similar to that of the device 11 shown in FIG. 5A and FIG. 5B. The structure is such that it is connected to an extraction electrode on the substrate 12 side.

[0056] The semiconductor device 10 is covered with a resin layer 103 inside a housing 106. The extraction electrode 105A is , and is connected to an electrode on the top surface of the device of the semiconductor device 10 via a metal wiring 104A. The extraction electrode 105B is directly connected to the silicon substrate of the semiconductor device 10.

[0057] In the cross-sectional view of electronic component 100C shown in FIG. 6C, semiconductor device 10 is disposed in housing 106. , metal wiring 104A, extraction electrodes 105A and 105B, and a resin layer 103. The semiconductor device 10 is attached to the substrate 101 in the housing 106 via the lead electrode 105B and the adhesive layer 10 6C is the same as that shown in FIGS. 5A and 5B. The upper surface of the device 11 and the silicon substrate 12 side are connected to extraction electrodes.

[0058] The semiconductor device 10 is covered with a resin layer 103 inside a housing 106. The extraction electrode 105A is , and is connected to an electrode on the top surface of the device of the semiconductor device 10 via a metal wiring 104A. The extraction electrode 105B is directly connected to the silicon substrate of the semiconductor device 10.

[0059] The electronic components 100A to 100C shown in FIGS. 6A to 6C are connected to a heat sink. In FIG. 7, a heat sink 107 is provided on the substrate 101 side. This configuration allows the silicon substrate 12 to This can improve the heat dissipation properties of the components.

[0060] 8A to 8D show top view variations of the device 11 described in FIG. 2A. I will explain.

[0061] In the device 11A shown in FIG. 8A, similarly to FIG. 2A, conductors 21A and 21B and conductor 22A, 22B, and an X-shaped region 23R in which transistors 23A to 23D are provided. In device 11A shown in FIG. 8A, the drains of transistors 23A through 23D are An opening 2 is formed in the area overlapping the conductors 22A and 22B connected to the silicon substrate 12. 4A and 24B connect the silicon substrate 12 to the drains of the transistors 23A to 23D. The configuration shown is as follows:

[0062] In the device 11B shown in FIG. 8B, conductors 21A and 21B and conductors 22A and 22B are 8B, the device 11B has transistors 23A and 23B. The region 5 of the silicon substrate 12 overlapping the conductors 21A and 21B connected to the sources 23A to 23D 1A, 51B can be provided with a transistor provided on a silicon substrate 12. By adopting this configuration, the openings 24A and 24B are formed so that the heat generated by the drain can be dissipated. The logic circuit can be configured at a location separate from 4B.

[0063] In device 11C shown in FIG. 8C, conductors 21A and 21B and conductors 22A and 22B are In device 11C shown in FIG. 8C, the area overlapping with region 23R is The openings 24C and 24D reach the silicon substrate 12 and connect the silicon substrate 12 to the transistor. 23A to 23D. It dissipates the heat generated by the drain and equalizes the heat of the transistor, improving the transistor characteristics. In addition, the structure in which the conductor wiring is routed to the silicon substrate 12 can be used. Compared to conventional methods, it has the effect of reducing wiring resistance and dissipating heat through a shorter path. It also has an effect.

[0064] Also, as shown in device 11D of FIG. 8D, the structure of device 11A shown in FIG. 8A is It is also possible to use a configuration in which the configuration of the device 11C shown in FIG. 8C is combined with the configuration of the device 11C shown in FIG. .

[0065] 9A to 9D show examples of operation and application of the semiconductor device and electronic component described above. This shows the following.

[0066] Fig. 9A illustrates the state in which a current ID flows between a source (S) and a drain (D) when a voltage VG is applied to the gate of a transistor 23 included in a semiconductor device 20 and a voltage VBG is applied to a back gate. The figure shows the state in which a current ID flows between a source (S) and a drain (D) when a voltage VG is applied to the gate of a transistor 23 included in a semiconductor device 20 and a voltage VBG is applied to a back gate. The figure shows the state in which a current ID flows between a source (S) and a drain (D) when a voltage VG is applied to the gate of a transistor 23 included in a semiconductor device 20 and a voltage VBG is applied to a back gate.

[0067] Fig. 9B is a schematic diagram of a graph showing the current-voltage characteristics of the transistor 23 illustrated in Fig. 9A. By switching the back gate voltage between voltages VBG_A and VBG_B (< VBG_A), states with different electrical characteristics can be switched. For example, when the back gate voltage is the voltage VBG_A, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is on can be increased, and when the back gate voltage is the voltage VBG_B, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is off can be made extremely low. By switching the back gate voltage between voltages VBG_A and VBG_B (< VBG_A), states with different electrical characteristics can be switched. For example, when the back gate voltage is the voltage VBG_A, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is on can be increased, and when the back gate voltage is the voltage VBG_B, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is off can be made extremely low. By switching the back gate voltage between voltages VBG_A and VBG_B (< VBG_A), states with different electrical characteristics can be switched. For example, when the back gate voltage is the voltage VBG_A, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is on can be increased, and when the back gate voltage is the voltage VBG_B, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is off can be made extremely low. By switching the back gate voltage between voltages VBG_A and VBG_B (< VBG_A), states with different electrical characteristics can be switched. For example, when the back gate voltage is the voltage VBG_A, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is on can be increased, and when the back gate voltage is the voltage VBG_B, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is off can be made extremely low. By switching the back gate voltage between voltages VBG_A and VBG_B (< VBG_A), states with different electrical characteristics can be switched. For example, when the back gate voltage is the voltage VBG_A, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is on can be increased, and when the back gate voltage is the voltage VBG_B, the amount of current flowing between the source (S) and the drain (D) when the transistor 23 is off can be made extremely low. These states can be switched.

[0068] By configuring the transistor 23 of the semiconductor device 10 that functions as a power transistor with an OS transistor, it is also possible to adopt a configuration in which the semiconductor device 10 is provided in a battery protection circuit 60 like a power storage device 199 provided with a battery 61 illustrated in Fig. 9C. By configuring the transistor 23 of the semiconductor device 10 that functions as a power transistor with an OS transistor, it is also possible to adopt a configuration in which the semiconductor device 10 is provided in a battery protection circuit 60 like a power storage device 199 provided with a battery 61 illustrated in Fig. 9C. By configuring the transistor 23 of the semiconductor device 10 that functions as a power transistor with an OS transistor, it is also possible to adopt a configuration in which the semiconductor device 10 is provided in a battery protection circuit 60 like a power storage device 199 provided with a battery 61 illustrated in Fig. 9C.

[0069] As described above, in the configuration of the semiconductor device according to one aspect of the present invention, a silicon substrate and an OS transistor are stacked, and heat generated on the drain side of the transistor can be dissipated to the silicon substrate side through an opening portion. That is, the silicon substrate can function as a heat sink. Therefore, fluctuations in the electrical characteristics of the transistor due to heat generation or element degradation can be suppressed, and a semiconductor device with excellent reliability can be obtained. <00005​​​​​​​​​​​ (Embodiment 2) In this embodiment mode, an example of a cross-sectional structure of the semiconductor device described in the above embodiment mode will be described with reference to the drawings. This will be explained using:

[0071] The semiconductor device shown in FIG. 10 includes a transistor 11 on a silicon substrate 12. 10, the source of the transistor 23 is provided with a The conductor 21 connected to the drain and the conductor 22 connected to the drain are also shown in FIG. In the semiconductor device shown, an opening 24 is shown extending from the conductor 22 to the silicon substrate 12. The opening 24 corresponds to the openings 24A and 24B described in the first embodiment. 1A is a cross-sectional view of the transistor 23 in the channel length direction, and FIG. 11B is a cross-sectional view of the transistor 23 1 is a cross-sectional view in the channel width direction.

[0072] The transistor 23 corresponds to the transistors 23A to 23D described in the first embodiment. The transistor 23 is an OS transistor having a low off-state current. The power consumption of an electronic device equipped with the device can be reduced.

[0073] The silicon substrate 12 is doped with boron or the like to increase thermal conductivity, thereby forming a p-type conductive layer. By giving the silicon substrate p-type conductivity, it is possible to compared to silicon substrates with or without conductivity. The silicon substrate can be made of n-type conductive materials such as arsenic and phosphorus. The silicon substrate 12 may be a p-channel or n-channel type. Alternatively, the semiconductor device may be configured to include a transistor of a channel type.

[0074] On the silicon substrate 12, an insulator 320, an insulator 322, an insulator 324, and an insulator 325 are formed. 26 are stacked in order.

[0075] The insulators 320, 322, 324, and 326 may be, for example, oxide. Silicon, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, oxide Aluminum oxynitride, aluminum nitride oxide, aluminum nitride, etc. may be used.

[0076] In this specification and the like, silicon oxynitride refers to a material containing more oxygen than nitrogen in its composition. Silicon nitride oxide refers to a material that contains more nitrogen than oxygen. In this specification, aluminum oxynitride refers to a material with a high content. Aluminum oxide nitride is a material that has a higher oxygen content than nitrogen. It refers to a material that contains more nitrogen than oxygen as a constituent.

[0077] The insulator 322 is a planarizing member that flattens steps on the silicon substrate 12 or the like provided below it. For example, the top surface of the insulator 322 may have a film-like function. For this purpose, the surface may be planarized by a planarization process using a chemical mechanical polishing (CMP) method or the like.

[0078] The insulator 324 is also provided with a region where the transistor 23 is provided from the silicon substrate 12 or the like. It is preferable to use a film having a barrier property that prevents diffusion of hydrogen and impurities in the region.

[0079] An example of a film having a barrier property against hydrogen is silicon nitride formed by CVD. Here, a semiconductor having an oxide semiconductor such as the transistor 23 can be used. The diffusion of hydrogen into the element may deteriorate the characteristics of the semiconductor element. A film that suppresses the diffusion of hydrogen is used between the transistor 23 and the silicon substrate 12. Specifically, the film that suppresses hydrogen diffusion is a film that releases a small amount of hydrogen. do.

[0080] The amount of desorption of hydrogen can be analyzed using, for example, thermal desorption spectroscopy (TDS). For example, the amount of hydrogen desorption from the insulator 324 can be measured by TDS analysis when the surface temperature of the film is 5 In the range of 0 to 500°C, the amount of desorption converted to hydrogen atoms is Converted to 10 x 10 15 atoms / cm 2 Less than or equal to 5 x 10 15 at oms / cm 2 The following is fine.

[0081] It is preferable that the insulator 326 has a lower dielectric constant than the insulator 324. For example, The dielectric constant of the insulator 326 is preferably less than 4, more preferably less than 3. The relative dielectric constant of the insulator 326 is preferably 0.7 times or less than the relative dielectric constant of the insulator 324, and more preferably 0.6 times or less. By using a material with a low dielectric constant as the interlayer film, the parasitic capacitance generated between wirings can be reduced. It can be reduced.

[0082] The insulators 320, 322, 324, and 326 are made of silicon. A conductor 328 connecting the substrate 12 and the transistor 23, a conductor 330, etc. are embedded. The conductors 328 and 330 function as plugs or wiring. In addition, the conductors that function as plugs or wiring are grouped together to form the same structure. In addition, in this specification and the like, a wiring and a plug connected to the wiring may be In other words, when a part of the conductor functions as a wiring, In some cases, a portion of the conductor functions as a plug.

[0083] The materials for each plug and wiring (conductor 328, conductor 330, etc.) include metal materials, alloys, and the like. Conductive materials such as gold, metal nitride, or metal oxide are used in a single layer or in a laminated form. High-melting-point materials such as tungsten and molybdenum, which have both heat resistance and electrical conductivity, can be used. It is preferable to use tungsten, or aluminum or copper. It is preferable to form the wiring from a low resistance conductive material such as the above. The resistance can be lowered.

[0084] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, in FIG. An insulator 350, an insulator 352, and an insulator 354 are stacked in this order. In addition, a conductor 356 is formed on the insulators 350, 352, and 354. The conductor 356 is a plug or a wiring that connects the silicon substrate 12 and the transistor 23. The conductor 356 has a function as a line. The material can be used.

[0085] For example, the insulator 350 has a barrier property against hydrogen, similar to the insulator 324. It is preferable to use an insulator having a barrier property against hydrogen. In particular, it is preferable that the insulating material 350 has a barrier property against hydrogen. A conductor having a barrier property against hydrogen is formed in the opening. The silicon substrate 12 and the transistor 23 can be separated by a barrier layer. This makes it possible to suppress the diffusion of hydrogen from the capacitor substrate 12 to the transistor 23 .

[0086] As a conductor having a barrier property against hydrogen, for example, tantalum nitride or the like is used. In addition, by laminating tantalum nitride and highly conductive tungsten, The diffusion of hydrogen from the silicon substrate 12 can be suppressed while maintaining the overall conductivity. In this case, the tantalum nitride layer having a barrier property against hydrogen has a barrier property against hydrogen. It is preferable that the insulating material 350 is in contact with the insulating material 350.

[0087] On the insulator 354, an insulator 510, an insulator 512, an insulator 514, and an insulator 516 are formed. , are stacked in this order. It is preferable that any of the bodies 516 is made of a material that has a barrier property against oxygen and hydrogen. .

[0088] For example, the insulators 510 and 514 are provided with a silicon substrate 12 or the like, and the transistor 2 In the region where the 3 is provided, a film having a barrier property that prevents diffusion of hydrogen and impurities can be used. Therefore, it is preferable to use a material similar to that of the insulator 324.

[0089] As an example of a film with barrier properties against hydrogen, silicon nitride formed by CVD is used. Here, a semiconductor element having an oxide semiconductor such as the transistor 23 can be provided with water. The diffusion of silicon may deteriorate the characteristics of the semiconductor device. It is preferable to use a film that suppresses the diffusion of hydrogen between the silicon substrate 12 and the transistor 23. Specifically, a film that suppresses hydrogen diffusion is a film that releases a small amount of hydrogen.

[0090] In addition, as a film having a barrier property against hydrogen, for example, an insulator 510 and an insulator 5 For 14, metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide may be used. It is preferable that:

[0091] In particular, aluminum oxide is a material that contains oxygen and hydrogen, which are factors that affect the electrical characteristics of transistors. It has a high blocking effect that prevents impurities such as water from passing through the membrane. Aluminum is a material that absorbs impurities such as hydrogen and moisture during and after the manufacturing process of a transistor. This can prevent the transistor 23 from being mixed with the other components. Therefore, the release of oxygen from the metal oxide can be suppressed. It is suitable for use as a protective film against

[0092] For example, the insulators 512 and 516 may be made of the same material as the insulator 320. In addition, by using materials with a relatively low dielectric constant for these insulators, , the parasitic capacitance occurring between the wirings can be reduced. The film 516 may be a silicon oxide film, a silicon oxynitride film, or the like.

[0093] In addition, the insulators 510, 512, 514, and 516 are provided with conductors 5 18, and conductors (for example, conductor 503) that constitute transistor 23 are embedded. The conductor 518 is a plate that connects the silicon substrate 12 and the transistor 23. The conductor 518 functions as a wiring or a conductor. The same materials as those used in the first embodiment can be used.

[0094] In particular, the insulator 510 and the conductor 518 in the area in contact with the insulator 514 are free of oxygen, hydrogen, It is preferable that the silicon dioxide is a conductive material having a barrier property against water. The substrate 12 and the transistor 23 are layers having barrier properties against oxygen, hydrogen, and water. This allows for separation and suppresses the diffusion of hydrogen from the silicon substrate 12 to the transistor 23. It is possible.

[0095] Above the insulator 516, the transistor 23 is provided.

[0096] As shown in FIGS. 11A and 11B, the transistor 23 is formed by the insulator 514 and the insulator 51 6, and the conductor 503 disposed so as to be embedded in the insulator 516 and the conductor 503. an insulator 520 disposed on the insulator 520; an insulator 522 disposed on the insulator 520; 22, an insulator 524, and an oxide 530a disposed on the insulator 524. , oxide 530b arranged on oxide 530a, and oxide 530b arranged on oxide 530b, separated from each other The conductors 542a and 542b are arranged on the conductors 542a and 542b. and an opening is formed between the conductor 542a and the conductor 542b. 80, oxide 530c disposed on the bottom and side surfaces of the opening, and oxide 530c formed on the surface and a conductor 560 disposed on the surface of the insulator 550. do.

[0097] 11A and 11B, the oxide 530a, the oxide 530b, the conductor 5 It is preferable to place an insulator 544 between the conductor 542a and the insulator 580. 11A and 11B, the conductor 560 is preferably disposed inside the insulator 550. and a conductor 560a provided so as to be embedded inside the conductor 560a. 11A and 11B, An insulator 574 may be disposed on top of the insulator 580, the conductor 560, and the insulator 550. preferable.

[0098] In the following, the oxide 530a, the oxide 530b, and the oxide 530c will be collectively referred to as oxides 530a, 530b, and 530c. It is sometimes called oxide 530.

[0099] In the transistor 23, the region where the channel is formed and the vicinity thereof are oxidized. 5 shows a structure in which three layers of an oxide 530a, an oxide 530b, and an oxide 530c are stacked. However, the present invention is not limited to this. For example, a single layer of oxide 530b, an oxide a two-layer structure of oxide 530b and oxide 530a, a two-layer structure of oxide 530b and oxide 530c, or The transistor 23 may have a stacked structure of four or more layers. Although 560 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 560 may have a single layer structure or a laminated structure of three or more layers. The transistor 23 shown in FIGS. 10, 11A, and 11B is an example, and the structure is not limited to this example. The transistors are not limited to any particular type, and an appropriate transistor may be used depending on the circuit configuration and driving method.

[0100] Here, conductor 560 functions as the gate electrode of transistor 23, and conductor 542 The conductor 542a and the conductor 542b function as a source electrode and a drain electrode, respectively. Thus, the conductor 560 is inserted through the opening in the insulator 580 and the conductors 542a and 542b. The conductor 560, the conductor 542a, and the conductor 542b are formed so as to be embedded in the sandwiched region. The placement of the conductive material 542b is selected to be self-aligned with the opening of the insulator 580. In the transistor 23, the gate electrode is self-aligned between the source electrode and the drain electrode. Therefore, the conductor 560 can be positioned with a margin for alignment. Therefore, the area occupied by the transistor 23 can be reduced. This allows for miniaturization and high integration of semiconductor devices.

[0101] Furthermore, the conductor 560 is self-aligned in the region between the conductors 542a and 542b. Since the conductor 560 is formed, the conductor 560 has an overlapping region with the conductor 542a or the conductor 542b. As a result, a gap is formed between the conductor 560 and the conductors 542a and 542b. The parasitic capacitance formed can be reduced. It can have improved speed and high frequency characteristics.

[0102] Conductor 560 may function as a first gate (also called a top gate) electrode. The conductor 503 also functions as a second gate (also called a bottom gate) electrode. In this case, the potential applied to the conductor 503 may be different from the potential applied to the conductor 560. By changing them independently, the threshold voltage of the transistor 23 can be controlled. In particular, applying a negative potential to the conductor 503 can It is possible to increase the threshold voltage above 0 V and reduce the off-current. Applying a negative potential to the conductor 503 reduces the amount of potential applied to the conductor 560 compared to not applying a negative potential. This can reduce the drain current when the applied potential is 0V.

[0103] The conductor 503 is arranged to have an overlapping area with the oxide 530 and the conductor 560. As a result, when a potential is applied to the conductor 560 and the conductor 503, The electric field generated from the conductor 503 is connected to the electric field generated from the oxide 530. In this specification and the like, the first gate electrode and and a transistor in which the electric field of the second gate electrode electrically surrounds the channel forming region. The structure is called a surrounded channel (s-channel) structure.

[0104] The conductor 503 has the same structure as the conductor 518, and the insulators 514 and 5 Conductor 503a is formed in contact with the inner wall of opening 16, and conductor 503b is formed further inside. In the transistor 23, the conductor 503a and the conductor 503b are stacked. However, the present invention is not limited to this. The layer 503 may be a single layer or a laminated structure of three or more layers.

[0105] Here, the conductor 503a prevents the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms. It is preferable to use a conductive material that has the function of suppressing the impurities (i.e., the impurities are less likely to permeate). Or, a function of suppressing the diffusion of oxygen (for example, at least one of oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material having the above-mentioned properties (which is difficult for oxygen to permeate). In the specification, the function of suppressing the diffusion of impurities or oxygen means the function of suppressing the diffusion of the above impurities or oxygen. The function is to suppress the diffusion of any one or all of the elements.

[0106] For example, the conductor 503a has a function of suppressing the diffusion of oxygen, so that the conductor 50 This can prevent 3b from being oxidized and the electrical conductivity from decreasing.

[0107] When the conductor 503 also functions as a wiring, the conductor 503b is made of tungsten, copper, or the like. It is preferable to use a conductive material having high conductivity, such as aluminum or aluminum-based material. In this case, the conductor 503a is not necessarily provided. However, it may have a laminated structure, for example, a layer of titanium or titanium nitride and the above conductive material. It may also be laminated with

[0108] The insulators 520, 522, and 524 function as a second gate insulating film. It has.

[0109] Here, the insulator 524 in contact with the oxide 530 has more oxygen than the stoichiometric composition. It is preferable to use an insulator that contains a large amount of oxygen. That is, the insulator 524 has an excess oxygen region. It is preferable that the insulator containing such excess oxygen is formed in the oxide 530. By providing the oxide 530 in contact with the transistor 23, oxygen vacancies in the oxide 530 are reduced, and the reliability of the transistor 23 is improved. It can improve the performance.

[0110] As an insulator having an excess oxygen region, specifically, an oxide in which a part of oxygen is released by heating is used. It is preferable to use oxide materials. Oxides that release oxygen when heated are called TDS (Th Thermal Desorption Spectroscopy (DSS) analysis revealed that the oxygen atoms The converted amount of oxygen desorption is 1.0 x 10 18 atoms / cm 3 Above 1.0, preferably 1.0 x10 19 atoms / cm 3 More preferably, 2.0 × 10 19 atoms / c m 3 or more, or 3.0 x 10 20 atoms / cm 3 The oxide film is as described above. The surface temperature of the film during the TDS analysis is 100°C or higher and 700°C or lower. The temperature range is preferably from 0°C to 400°C.

[0111] In addition, the insulator having the excess oxygen region and the oxide 530 are brought into contact with each other and subjected to heat treatment. One or more of microwave treatment and RF treatment may be performed. By doing so, it is possible to remove water or hydrogen from the oxide 530. For example, In this case, a reaction occurs in which the VoH bond is broken, in other words, "V O H→V O +H" This reaction occurs, and some of the hydrogen generated at this time is dehydrogenated. The oxide 530 is bonded to oxygen to form H2O, which is removed from the oxide 530 or the insulator near the oxide 530. In addition, some of the hydrogen may diffuse or be captured (gettered) in the conductor 542. It may also be called.

[0112] The microwave treatment may be carried out using, for example, an apparatus having a power source that generates high-density plasma. Alternatively, it is preferable to use an apparatus having a power source for applying RF to the substrate side. By using a gas containing oxygen and high density plasma, high density oxygen radicals are generated. In addition, by applying RF to the substrate side, high density plasma is generated. The oxygen radicals are efficiently introduced into the oxide 530 or the insulator in the vicinity of the oxide 530. The microwave treatment can be carried out at a pressure of 133 Pa or more, preferably 2 The pressure may be 00 Pa or more, and more preferably 400 Pa or more. For example, oxygen and argon are used as gases introduced into the apparatus, and the oxygen flow rate ratio (O / (O2+Ar)) is set to 50% or less, preferably 10% or more and 30% or less.

[0113] In addition, during the manufacturing process of the transistor 23, when the surface of the oxide 530 is exposed, It is preferable to perform heat treatment. The heat treatment is performed at a temperature of, for example, 100° C. or higher and 450° C. or lower, preferably More preferably, the heat treatment is carried out at a temperature of 350° C. or higher and 400° C. or lower. or an inert gas atmosphere, or an oxidizing gas of 10 ppm or more, 1% or more, or 10% For example, the heat treatment is preferably carried out in an oxygen atmosphere. This supplies oxygen to the oxide 530, and oxygen vacancies (V O ) can be reduced. The heat treatment may be carried out under reduced pressure, or in a nitrogen gas or inert gas atmosphere. After heat treatment in this atmosphere, an oxidizing gas of 10 ppm or more is added to compensate for the oxygen that has been removed. Alternatively, the oxidation may be carried out in an atmosphere containing 1% or more, or 10% or more of an oxidizing gas. After heat treatment in an atmosphere containing 1% or more, or 10% or more, nitrogen gas or Alternatively, the heat treatment may be performed in an inert gas atmosphere.

[0114] In addition, by performing an oxygen addition treatment on the oxide 530, oxygen vacancies in the oxide 530 are filled with oxygen. In other words, "V O +O→null” reaction. Furthermore, the hydrogen remaining in the oxide 530 and the hydrogen supplied to the oxide 530 can be By reacting with oxygen, the hydrogen can be removed as H2O (dehydration). As a result, the hydrogen remaining in the oxide 530 recombines with the oxygen vacancies, forming V O H-shaped This can prevent the formation of

[0115] Also, if the insulator 524 has an excess oxygen region, the insulator 522 may be oxygen-rich (e.g., It has the function of suppressing the diffusion of oxygen (element atoms, oxygen molecules, etc.) (the oxygen mentioned above is less likely to permeate) preferable.

[0116] The insulator 522 has a function of suppressing the diffusion of oxygen and impurities, and the oxide 530 The oxygen contained in the conductor 503 does not diffuse to the insulator 520 side, which is preferable. This can prevent the insulator 524 and the oxide 530 from reacting with oxygen.

[0117] The insulator 522 may be, for example, aluminum oxide, hafnium oxide, aluminum and hafnium oxide. oxides containing ammonium (hafnium aluminate), tantalum oxide, zirconium oxide, titanium Lead zirconate titanate (PZT), strontium titanate (SrTiO3), or (Ba Insulators containing high-k materials such as SrTiO3 (BST) are used as single or multilayered layers. As transistors become smaller and more highly integrated, the gate insulating film Thinning of the gate insulating film may cause problems such as leakage current. By using high-k material for the insulator, the physical film thickness is maintained while the transistor is operating. This makes it possible to reduce the gate potential.

[0118] In particular, it has the function of suppressing the diffusion of impurities and oxygen (the oxygen mentioned above is less likely to permeate). The insulating material is an insulator containing oxide of one or both of aluminum and hafnium. As an insulator containing oxide of one or both of aluminum and hafnium, oxide Aluminum, hafnium oxide, or oxides containing aluminum and hafnium (hafnium It is preferable to use an insulator 522 made of such a material. When formed, the insulator 522 prevents oxygen from being released from the oxide 530 and prevents the transistor 23 from It functions as a layer that prevents impurities such as hydrogen from entering the oxide 530 from the surrounding area.

[0119] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. Niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Alternatively, zirconium oxide may be added to these insulators. Alternatively, these insulators may be nitrided. The edge may be formed by laminating silicon oxide, silicon oxynitride, or silicon nitride.

[0120] The insulator 520 is preferably thermally stable. For example, silicon oxide and Silicon oxide nitride and silicon oxynitride are suitable because they are thermally stable. By combining the insulating layer with silicon oxide or silicon oxynitride, thermal stability and low dielectric constant are achieved. A laminated insulator 520 with a high dielectric constant can be obtained.

[0121] In the transistor 23 shown in FIGS. 11A and 11B, the second gate electrode is formed of a three-layer laminated structure. As the gate insulating film, an insulator 520, an insulator 522, and an insulator 524 are shown. The second gate insulating film may have a single layer, two layers, or a laminated structure of four or more layers. In this case, the laminate structure is not limited to the same material, but may be a laminate structure made of different materials. .

[0122] The transistor 23 functions as an oxide semiconductor in the oxide 530 including the channel formation region. For example, the oxide 530 may be an In-Mn-Zn oxide. n oxides (element M is aluminum, gallium, yttrium, copper, vanadium, beryllium Smoke, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum Tantalum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, etc. It is preferable to use a metal oxide such as one or more selected from the oxide 530. The In-M-Zn oxide that can be used as a substrate is CAAC-OS (C-Axls Alignment). d Crystal Oxide Semiconductor), CAC-OS(Cl oud-Aligned Composite Oxide Semiconductor The oxide 530 is preferably an In—Ga oxide, an In—Zn oxide, or the like. An oxide may also be used. CAAC-OS and CAC-OS will be described later. When it is desired to increase the on-current of the transistor 23, the oxide 530 is made of In-Zn oxide. When an In-Zn oxide is used as the oxide 530, for example, the oxide In-Zn oxide is used for 530a, and In-M- A stacked structure using Zn oxide, or an In-M-Zn oxide is used as the oxide 530a, A laminated structure using In-Zn oxide for either the oxide 530b or the oxide 530c. Examples include construction.

[0123] In addition, it is preferable to use a metal oxide with a low carrier concentration for the transistor 23. When the carrier concentration of the metal oxide is reduced, the impurity concentration in the metal oxide is reduced. In this specification and the like, the impurity concentration is low and the defect level density is low. A metal oxide with a low level density is called a high-purity intrinsic or substantially high-purity intrinsic. The pure substances include, for example, hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, Silicon, etc.

[0124] In particular, hydrogen contained in metal oxides reacts with oxygen that bonds with metal atoms to form water. In this case, oxygen vacancies may be formed in the metal oxide. When an oxygen atom is introduced, the oxygen vacancy and hydrogen bond to form V O May form H. V O H is for Donna It functions as a carrier and electrons are generated. It may bond with oxygen, which bonds with atoms, to generate electrons, which are carriers. However, transistors using metal oxides containing a large amount of hydrogen have normally-on characteristics. In addition, hydrogen in metal oxides is easily moved by stress such as heat and electric field. However, if the metal oxide contains a large amount of hydrogen, the reliability of the transistor may be deteriorated. In one embodiment of the present invention, V in the oxide 530 O Reduce H as much as possible and use high purity intrinsic or It is preferable that V is substantially intrinsic with high purity. O Metal with sufficiently reduced H To obtain the oxide, impurities such as water and hydrogen must be removed from the metal oxide (dehydration, dehydrogenation). This is sometimes referred to as chemical treatment.) and the other is to supply oxygen to the metal oxide to compensate for the oxygen deficiency. (sometimes referred to as oxygenation treatment) is important. O Impurities such as H are sufficiently low By using reduced metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. Sex can be assigned.

[0125] The defect where hydrogen has entered the oxygen vacancy can function as a donor for the metal oxide. However, it is difficult to quantitatively evaluate the defects. Therefore, in this specification, metal As a parameter of the oxide, instead of donor concentration, we use the capacitance assuming a state where no electric field is applied. In other words, the "carrier concentration" described in this specification and the like is This can sometimes be rephrased as "energy concentration."

[0126] Therefore, when a metal oxide is used for the oxide 530, the hydrogen in the metal oxide should be as low as possible. Specifically, in the case of metal oxides, secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) The resulting hydrogen concentration is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 Less than, more Preferably 1 x 10 18 atoms / cm 3 Impurities such as hydrogen are sufficiently reduced. By using this metal oxide in the channel formation region of a transistor, stable electrical characteristics can be achieved. It can be granted.

[0127] In addition, when a metal oxide is used for the oxide 530, the capacitance of the metal oxide in the channel formation region is Rear density is 1×10 18 cm -3 Preferably, it is 1×10 or less. 17 cm -3 Not yet It is more preferable that the 16 cm -3 more preferably less than 1×10 13 cm -3 More preferably, it is less than 1×10 12 cm -3 Less than It is more preferable that the lower limit of the carrier concentration of the metal oxide in the channel formation region is There is no particular limitation on the -9 cm -3 It can be said that:

[0128] When a metal oxide is used for the oxide 530, the conductor 542 (the conductor 542a and When the conductor 542b) comes into contact with the oxide 530, the oxygen in the oxide 530 is transferred to the conductor 54 2, the conductor 542 may be oxidized. It is highly likely that the conductivity of the conductor 542 will decrease. The diffusion of oxygen into the oxide 530 can be expressed as the absorption of oxygen by the conductor 542. can be done.

[0129] Furthermore, oxygen in the oxide 530 is converted into the conductor 542 (the conductor 542a and the conductor 542b). Diffusion into the oxide 530b and the conductor 542a and the oxide 530b. A different layer may be formed between the conductive material 542 and the object 530b. Since the different layer contains a large amount of conductor 542, it is presumed that the different layer has insulating properties. The three-layer structure of the hetero layer and the oxide 530b is a three-layer structure consisting of a metal, an insulator, and a semiconductor. It can be considered as MIS (Metal-Insulator-Semiconductor) or) structure, or a diode junction structure mainly based on the MIS structure.

[0130] The different layer is not limited to being formed between the conductor 542 and the oxide 530b. For example, a heterogeneous layer may be formed between the conductor 542 and the oxide 530c. between the conductor 542 and the oxide 530b, and between the conductor 542 and the oxide 530c. may be formed.

[0131] In addition, the metal oxide that functions as a channel forming region in the oxide 530 has a band It is preferable to use a material with a gap of 2 eV or more, preferably 2.5 eV or more. As shown in Fig. 1, by using a metal oxide with a wide band gap, the off-state current of a transistor can be reduced. can be reduced.

[0132] The oxide 530 has an oxide 530a under the oxide 530b, so that the oxide 530a The diffusion of impurities from structures formed below the oxide 530b is suppressed. In addition, by having the oxide 530c on the oxide 530b, the oxide 530 The structure formed above the oxide 530c is prevented from diffusing impurities into the oxide 530b. It is possible.

[0133] The oxide 530 has a laminated structure of a plurality of oxide layers with different atomic ratios of each metal atom. Specifically, in the metal oxide used for the oxide 530a, it is preferable to use The atomic ratio of element M in the metal oxide used for oxide 530b is It is preferable that the atomic ratio of the metal oxide used for the oxide 530a is larger than that of the element M. In the oxide 530b, the atomic ratio of the element M to In is It is preferable that the atomic ratio of element M to In is larger than that of element M. In the metal oxide used, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M in the metal oxide is larger than that of In. The oxide 530c is a metal oxide that can be used for the oxide 530a or the oxide 530b. can be used.

[0134] Specifically, the oxide 530a is composed of In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. In:Ga:Zn=4:2:3 [atomic ratio] or 1:1:1 [atomic ratio] The oxide 530c may be a metal oxide of In:Ga:Zn=1:3:4. [atomic ratio], Ga:Zn=2:1 [atomic ratio], or Ga:Zn=2:5 [atomic ratio] In addition, a specific example of the oxide 530c having a stacked structure is as follows: The atomic ratios are In:Ga:Zn=4:2:3 and In:Ga:Zn=1:3:4. [Atomic ratio] Ga:Zn=2:1 [Atomic ratio] and In:Ga:Zn=4 :2:3 [atomic ratio], Ga:Zn=2:5 [atomic ratio], and In:Ga: Zn=4:2:3 [atomic ratio], gallium oxide and In:Ga:Zn=4: Examples include a layered structure with an atomic ratio of 2:3.

[0135] The energy of the conduction band minimum of the oxide 530a and the oxide 530c is It is preferable that the energy of the oxide is higher than the energy of the bottom of the conduction band of oxide b. The electron affinity of oxide 530a and oxide 530c is smaller than that of oxide 530b. It is preferable that:

[0136] Here, at the junctions of the oxide 530a, the oxide 530b, and the oxide 530c, The energy level of the lower conduction band edge changes gradually. The energy levels of the conduction band minimum at the junction of 530b and oxide 530c are continuous. In order to achieve this, the oxide 530 The interface between oxide 530a and oxide 530b, and the interface between oxide 530b and oxide 530c are It is preferable to lower the defect level density of the resulting mixed layer.

[0137] Specifically, oxide 530a and oxide 530b, and oxide 530b and oxide 530c However, by having a common element other than oxygen (as the main component), the mixed layer has a low defect level density. For example, when the oxide 530b is an In-Ga-Zn oxide, the oxide The oxide 530a and the oxide 530c include In-Ga-Zn oxide, Ga-Zn oxide, Gallium oxide or the like is preferably used.

[0138] At this time, the main path of the carriers is the oxide 530b. By configuring the oxide 530c as described above, the interface between the oxide 530a and the oxide 530b, and The defect state density at the interface between the oxide 530b and the oxide 530c can be reduced. Therefore, the influence of interface scattering on carrier conduction is reduced, and the transistor 23 is highly A large on-current can be obtained.

[0139] The semiconductor material that can be used for the oxide 530 is not limited to the above-mentioned metal oxides. The oxide 530 is a semiconductor material having a band gap (a zero-gap semiconductor). For example, semiconductors of elemental elements such as silicon, gallium arsenide, Compound semiconductors such as silicon, layered materials (atomic layer materials, two-dimensional materials, etc.) that function as semiconductors It is preferable to use a material such as a silicon dioxide film as a semiconductor material. It is preferable to use a material like this as the semiconductor material.

[0140] In this specification, the term "layered material" is a general term for a group of materials having a layered crystal structure. The layered crystal structure is formed by covalent and ionic bonds, and the layers are The structure is made up of layers of molecules that are stacked via bonds weaker than covalent or ionic bonds, such as ionic bonds. Layered materials have high electrical conductivity within the unit layer, that is, high two-dimensional electrical conductivity. A material that functions as a semiconductor and has high two-dimensional electrical conductivity is used for the channel formation region. This makes it possible to provide a transistor with a large on-state current.

[0141] Layered materials include graphene, silicene, and chalcogenides. is a compound containing chalcogen. Chalcogen is also a general term for elements belonging to Group 16. and includes oxygen, sulfur, selenium, tellurium, polonium, and livermorium. Chalcogenides include transition metal chalcogenides and group 13 chalcogenides. .

[0142] The oxide 530 may be, for example, a transition metal chalcogenide that functions as a semiconductor. Specific examples of transition metal chalcogenides that can be used as the oxide 530 include: These include molybdenum sulfide (typically MoS2), molybdenum selenide (typically MoS e2), molybdenum telluride (typically MoTe2), tungsten sulfide (typically W S2), tungsten selenide (typically WSe2), tungsten telluride (typically is WTe2), hafnium sulfide (typically HfS2), hafnium selenide (typically HfSe2), zirconium sulfide (typically ZrS2), zirconium selenide (typically Typical examples include ZrSe2).

[0143] On the oxide 530b, a conductor 542a is formed, which functions as a source electrode and a drain electrode. The conductors 542a and 542b are provided. Aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, ungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium , beryllium, indium, ruthenium, iridium, strontium, and lanthanum The metal elements mentioned above, or alloys containing the above metal elements, or combinations of the above metal elements It is preferable to use an alloy of tantalum nitride, titanium nitride, tungsten nitride, etc. titanium and aluminum nitrides, tantalum and aluminum nitrides, and titanium oxides Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use oxides containing titanium. In addition, tantalum nitride, titanium nitride, titanium and aluminum nitrides, tantalum and aluminum nitrides, ruthenium oxide, Ruthenium nitride, oxides containing strontium and ruthenium, and lanthanum and nickel Oxides are conductive materials that are resistant to oxidation or that maintain their conductivity even after absorbing oxygen. Furthermore, a metal nitride film such as tantalum nitride has a barrier property against hydrogen or oxygen. This is preferable because

[0144] 11A and 11B, the conductor 542a and the conductor 542b have a single-layer structure. However, a laminated structure of two or more layers may be used. For example, a tantalum nitride film and a tungsten film may be used. Alternatively, a titanium film and an aluminum film may be stacked. Two-layer structure with aluminum film laminated on stainless steel film, copper-magnesium-aluminum alloy Two-layer structure with copper film laminated on top of titanium film, two-layer structure with copper film laminated on top of titanium film, tungsten film A two-layer structure may be formed by laminating a copper film on top.

[0145] Also, a titanium film or titanium nitride film and an aluminum film overlaid on the titanium film or titanium nitride film are used. A three-layer structure in which a titanium film or a copper film is laminated and a titanium film or a titanium nitride film is further formed on top of that. Molybdenum film or molybdenum nitride film and a An aluminum film or a copper film is laminated on top of it, and a molybdenum film or a molybdenum nitride film is further laminated on top of it. There are three-layer structures that form a transparent film. Transparent conductive materials may also be used.

[0146] As shown in FIG. 11A, the conductor 542a (conductor 542b) of the oxide 530 At the interface and its vicinity, a region 543a and a region 543b are formed as low resistance regions. In this case, the region 543a functions as either a source region or a drain region. The region 543b functions as the other of the source region and the drain region. A channel forming region is formed in the region sandwiched between region a and region 543b.

[0147] By providing the conductor 542a (conductor 542b) so as to be in contact with the oxide 530, The oxygen concentration in the region 543a (region 543b) may decrease. The metal contained in the conductor 542a (conductor 542b) and the oxide 530 are In such a case, a metal compound layer containing the component may be formed in the region 543a (region The carrier concentration in the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region. become.

[0148] The insulator 544 is provided to cover the conductor 542a and the conductor 542b. The insulator 544 prevents oxidation of the oxide 542a and the conductor 542b. 30 and may be provided so as to be in contact with the insulator 524.

[0149] Insulator 544 includes hafnium, aluminum, gallium, yttrium, and zirconium. Smoke, tungsten, titanium, tantalum, nickel, germanium, neodymium, lanthanum It is possible to use a metal oxide containing one or more metals selected from the group consisting of magnesium, Also, silicon nitride oxide, silicon nitride, or the like can be used as the insulator 544. can be done.

[0150] In particular, the insulator 544 may be an oxide of aluminum or hafnium, or both. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium It is preferable to use oxides containing hafnium (hafnium aluminate). Hafnium aluminate has higher heat resistance than hafnium oxide film. In this case, the conductor 542a and the conductor 542b are preferably resistant to crystallization. If the material is oxidation-resistant or if the conductivity does not decrease significantly even when oxygen is absorbed, the insulator 544 is not an essential component and can be designed appropriately depending on the desired transistor characteristics.

[0151] By including the insulator 544, impurities such as water and hydrogen contained in the insulator 580 are prevented from reacting with the oxygen. The diffusion of the oxide 530b through the oxide 530c and the insulator 550 can be suppressed. In addition, the excess oxygen contained in the insulator 580 can prevent the conductor 560 from being oxidized. It can be controlled.

[0152] The insulator 550 functions as a first gate insulating film. It is preferable that the insulator 550 is disposed so as to be in contact with the inside (top and side surfaces) of the insulator 550. Similar to the insulator 524 described above, the insulator contains excess oxygen and releases oxygen when heated. It is preferable to form it using an edge body.

[0153] Specifically, silicon oxide having excess oxygen, silicon oxynitride, silicon nitride oxide, Silicon nitride, fluorine-doped silicon oxide, carbon-doped silicon oxide, carbon, and Silicon oxide doped with nitrogen and silicon oxide having vacancies can be used. Silicon oxide and silicon oxynitride are preferred because they are stable to heat.

[0154] An insulator that releases oxygen when heated is attached to the top surface of the oxide 530c as the insulator 550. By providing the oxide 530b as the insulating layer, the insulator 550 can be electrically connected to the oxide 530b through the oxide 530c. In addition, as with the insulator 524, oxygen can be effectively supplied to the channel forming region. It is preferable that the concentration of impurities such as water or hydrogen in the insulator 550 is reduced. The film thickness of 50 is preferably 1 nm or more and 20 nm or less.

[0155] In addition, in order to efficiently supply excess oxygen contained in the insulator 550 to the oxide 530, A metal oxide may be provided between the body 550 and the conductor 560. The metal oxide may be an insulator. It is preferable that the electrode 550 has a function of suppressing oxygen diffusion from the electrode 550 to the conductor 560. By providing a metal oxide having the function of suppressing diffusion, the insulator 550 is transferred to the conductor 560. In other words, the amount of excess oxygen supplied to the oxide 530 is prevented from decreasing. In addition, oxidation of the conductor 560 due to excess oxygen can be suppressed. As the metal oxide, any material that can be used for the insulator 544 may be used.

[0156] Note that the insulator 550 may have a stacked structure similar to the second gate insulating film. As transistors become more miniaturized and highly integrated, the gate insulating film becomes thinner, which reduces leakage current and other Therefore, the insulator that functions as the gate insulating film is By using a laminated structure of a k-material and a thermally stable material, It is possible to reduce the gate potential during transistor operation. A laminated structure with a high dielectric constant can be obtained.

[0157] The conductor 560 functioning as the first gate electrode has a two-layer structure in FIGS. 11A and 11B. However, it may have a single layer structure or a laminated structure of three or more layers.

[0158] The conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide molecule. (N2O, NO, NO2, etc.) Conductive material that has the function of suppressing the diffusion of impurities such as copper atoms It is preferable to use a material containing at least one of oxygen (for example, oxygen atom, oxygen molecule, etc.). It is preferable to use a conductive material that has the function of suppressing the diffusion of the conductive material 560a. By having the function of suppressing the diffusion of oxygen, the oxygen contained in the insulator 550 can diffuse into the conductor 5 It is possible to prevent the oxidation of 60b and the decrease in conductivity. Examples of functional conductive materials include tantalum, tantalum nitride, ruthenium, or Ruthenium oxide or the like is preferably used. In this case, the conductor 560b is formed by sputtering. By forming the film by the ring method, the electrical resistance value of the conductor 560a is reduced to make it a conductor. This can be called an OC (Oxide Conductor) electrode.

[0159] The conductor 560b is a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 560b also functions as a wiring, It is preferable to use a highly conductive material, such as tungsten, copper, or aluminum. A conductive material containing rubber as a main component can be used. For example, a laminated structure of titanium or titanium nitride and the above conductive material may be used. .

[0160] The insulator 580 is provided on the conductor 542a and the conductor 542b via the insulator 544. Preferably, the insulator 580 has an excess oxygen region. For example, the insulator 58 0, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, fluorine silicon oxide doped with carbon, silicon oxide doped with carbon and nitrogen It is preferable that the material contains silicon, silicon oxide having pores, or resin. Silicon and silicon oxynitride are preferred because they are thermally stable. The silicon oxide containing vacancies and pores can easily form excess oxygen regions in later processes. This is preferable because it allows

[0161] The insulator 580 preferably has an excess oxygen region. Oxygen is released upon heating. The insulator 580 is provided so as to have a region in contact with the oxide 530c. The oxygen in the oxide 530 is efficiently transferred to the oxide 530a and the oxide 530b through the oxide 530c. In addition, the concentration of impurities such as water or hydrogen in the insulator 580 is reduced. It is preferable that

[0162] The opening in the insulator 580 is formed to overlap the region between the conductor 542a and the conductor 542b. As a result, the conductor 560 is inserted through the opening in the insulator 580 and the conductor 542a and the conductor 542b. It is formed so as to be embedded in the region sandwiched between 542b.

[0163] In miniaturizing semiconductor devices, it is required to shorten the gate length. It is necessary to prevent the conductivity of the conductor 60 from decreasing. In this embodiment, the conductor 560 may have a shape with a high aspect ratio. The conductor 560 is provided so as to be embedded in the opening of the insulator 580. Even in a high-ratio shape, the conductor 560 is formed without collapsing during the process. It is possible.

[0164] The insulator 574 is connected to the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 550. The insulator 574 is preferably provided in contact with the , insulator 550, and insulator 580 can be provided with excess oxygen regions. Oxygen can be supplied into the oxide 530 from the excess oxygen region.

[0165] For example, the insulator 574 may be hafnium, aluminum, gallium, yttrium, Zirconium, tungsten, titanium, tantalum, nickel, germanium, or magnesium Metal oxides containing one or more metals selected from the group consisting of sodium and the like can be used.

[0166] In particular, aluminum oxide has a high barrier property and is a thin film of 0.5 nm to 3.0 nm. Therefore, the diffusion of hydrogen and nitrogen can be suppressed even if the sputtering method is used. The aluminum oxide film formed by this method is an oxygen source and also a barrier film for impurities such as hydrogen. It can also have a function as a

[0167] In addition, it is preferable to provide an insulator 581 that functions as an interlayer film over the insulator 574. The insulator 581, like the insulator 524, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that

[0168] In addition, the openings formed in the insulators 581, 574, 580, and 544 Conductor 540a and conductor 540b are placed in the opening. The conductors 540a and 540b are provided facing each other with the conductor 560 in between. It has the same structure as the conductor 546 and the conductor 548 described later.

[0169] An insulator 582 is provided on the insulator 581. The insulator 582 is resistant to oxygen and hydrogen. Therefore, the insulator 582 is preferably made of an insulating material. The insulator 582 may be made of the same material as the insulator 514. For example, aluminum oxide may be used. It is preferable to use metal oxides such as tantalum oxide, hafnium oxide, and the like.

[0170] In particular, aluminum oxide is a material that can absorb oxygen and hydrogen, which can cause fluctuations in the electrical characteristics of transistors. The membrane has a high blocking effect, preventing both impurities such as oxygen and water from penetrating. Aluminum is a material that absorbs impurities such as hydrogen and moisture during and after the manufacturing process of a transistor. This can prevent the transistor 23 from being mixed with the other components. Therefore, the release of oxygen from the oxide can be suppressed. It is suitable for use as a protective film.

[0171] An insulator 586 is provided on the insulator 582. The insulator 586 is The same materials as those of 320 can be used. In addition, these insulators have a relatively low dielectric constant. By using a material with high insulating properties, the parasitic capacitance between wiring can be reduced. The edge 586 can be made of a silicon oxide film, a silicon oxynitride film, or the like.

[0172] Also, the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator The edge 574, the insulator 581, the insulator 582, and the insulator 586 are provided with the conductor 546 and Conductors 548 and the like are embedded.

[0173] The conductor 546 and the conductor 548 connect the silicon substrate 12 and the transistor 23. The conductor 546 and the conductor 548 function as a plug or wiring. 328 or the same material as the conductor 330.

[0174] After the transistor 23 is formed, an opening is formed to surround the transistor 23. An insulator having high barrier properties against hydrogen or water may be formed so as to cover the opening. By wrapping the transistor 23 in an insulator with high barrier properties, moisture and hydrogen are prevented from entering from the outside. Alternatively, a plurality of transistors 23 can be connected together to prevent water from entering the transistors 23. Alternatively, the transistor 23 may be wrapped in an insulating material having a high barrier property against water. When forming an opening so as to surround the insulator 514 or the insulator 522, for example, and the insulator with high barrier properties is formed so as to contact the insulator 514 or the insulator 522. This is preferable because the formation of the transistor 23 can be performed as part of the manufacturing process. As an insulator having high barrier properties against silicon or water, for example, the same material as the insulator 522 can be used. Just use

[0175] Next, the conductor 22 and the conductor 21 are provided. The conductor 22 and the conductor 21 are A plug or wiring that connects the silicon substrate 12 and the transistor 23. do.

[0176] The conductors 21 and 22 may be made of molybdenum, titanium, tantalum, tungsten, or aluminum. A metal film containing an element selected from aluminum, copper, chromium, neodymium, and scandium, or Metal nitride films containing the above elements (tantalum nitride film, titanium nitride film, molybdenum nitride film) Alternatively, indium tin oxide, oxide film, etc. can be used. Tungsten-containing indium oxide, tungsten oxide-containing indium zinc oxide, Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium Conductive materials such as zinc oxide and indium tin oxide with added silicon oxide can also be used. can.

[0177] In FIG. 10, the conductors 21 and 22 are shown as single-layer structures, but the present invention is not limited to this structure. For example, a conductive material having a barrier property and a conductive material having a high conductivity may be used. Between the body and the conductor with barrier properties and a conductor with high adhesion to the highly conductive conductor A conductive body may be formed.

[0178] By using this structure, a semiconductor device using a transistor having an oxide semiconductor This allows for miniaturization or high integration.

[0179] 12A and 12B show modifications of the transistor 23 shown in FIGS. 11A and 11B. FIG. 12A is a cross-sectional view of the transistor 23 in the channel length direction, and FIG. 12B is a cross-sectional view of the transistor 23. 12A and 12B are cross-sectional views of the transistor 23 in the channel width direction. The present invention can also be applied to other transistors, such as the transistor 23, included in the semiconductor device of one embodiment of the present invention. can be done.

[0180] The transistor 23 shown in FIGS. 12A and 12B has an insulator 402 and an insulator 404. 11A and 11B. An insulator 552 is provided in contact with the side surface of the conductor 540b. 11A and 11B. 11A and 11B in that it does not have the transistor 20.

[0181] The transistor 23 shown in FIGS. 12A and 12B has an insulator 402 provided on an insulator 512. Furthermore, the insulator 404 is provided over the insulator 574 and the insulator 402.

[0182] In the transistor 23 shown in FIGS. 12A and 12B, the insulators 514, 516, and The insulator 522, the insulator 524, the insulator 544, the insulator 580, and the insulator 574 are patterned. The insulator 404 covers these. , the top surface of the insulator 574, the side surface of the insulator 574, the side surface of the insulator 580, and the side surface of the insulator 544 , the side of the insulator 524, the side of the insulator 522, the side of the insulator 516, the side of the insulator 514 , and the top surface of the insulator 402. As a result, the oxide 530 and the like are in contact with the top surface of the insulator 404. and is isolated from the outside by an insulator 402.

[0183] The insulators 402 and 404 are made of at least hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 402 and the insulator 403 have a high function of suppressing the diffusion of water molecules. The insulator 404 is made of silicon nitride or silicon nitride oxide, which has a high hydrogen barrier property. It is preferable to use a material such as a silicon dioxide film, which prevents hydrogen and other impurities from diffusing into the oxide 530. Therefore, the characteristics of the transistor 23 can be prevented from being deteriorated. Therefore, the reliability of the semiconductor device of one embodiment of the present invention can be improved.

[0184] The insulator 552 includes the insulator 581, the insulator 404, the insulator 574, the insulator 580, and the insulator 574. The insulator 552 is provided in contact with the insulator 544. The insulator 552 has a function of suppressing the diffusion of hydrogen or water molecules. For example, the insulator 552 is preferably a material having a high hydrogen barrier property. It is preferable to use an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide. In particular, silicon nitride is a material with high hydrogen barrier properties, so it is used as the insulator 552. By using a material with high hydrogen barrier properties as the insulator 552, Alternatively, impurities such as hydrogen may flow from the insulator 580 through the conductors 540a and 540b. The oxide 530 can be prevented from diffusing into the oxide 530. This can prevent the elements from being absorbed by the conductors 540a and 540b. This can improve the reliability of the semiconductor device of one embodiment of the present invention.

[0185] 13A and 13B show modifications of the transistors shown in FIGS. 12A and 12B. 3A is a cross-sectional view of the transistor in the channel length direction, and FIG. 13B is a cross-sectional view of the transistor in the channel length direction. 13A and 13B are cross-sectional views in the width direction of the transistor. The two-layer structure of oxide 530c1 and oxide 530c2 is shown in FIGS. 12A and 12B. It is different from a transistor.

[0186] The oxide 530c1 is formed on the top surface of the insulator 524, the side surface of the oxide 530a, and the side surface of the oxide 530b. The top surface and side surfaces, the side surfaces of the conductors 542a and 542b, the side surfaces of the insulator 544, and the insulating The oxide 530c2 contacts the side of the insulator 580. The oxide 530c2 contacts the insulator 550.

[0187] The oxide 530c1 may be, for example, an In-Zn oxide. When the oxide 530c has a single layer structure, the oxide 530c can be used as the material 530c2. For example, the oxide 530c2 may be made of a material similar to the material that can be used for the oxide 530c2. n:Ga:Zn=1:3:4 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or G A metal oxide having an atomic ratio of a:Zn=2:5 can be used.

[0188] By forming the oxide 530c into a two-layer structure of the oxide 530c1 and the oxide 530c2, In this case, the on-state current of the transistor can be increased compared to when the oxide 530c has a single-layer structure. Therefore, the transistor can be, for example, a power MOS transistor. Note that the oxide 530c included in the transistor illustrated in FIGS. 11A and 11B is also the oxide 530 It can have a two-layer structure of c1 and oxide 530c2.

[0189] The transistors shown in FIGS. 13A and 13B can be applied to the transistor 23, for example. Therefore, the on-current of the transistor 23 can be increased.

[0190] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0191] (Embodiment 3) In this embodiment, the semiconductor device can be used for the OS transistor described in the above embodiment. The structures of CAC-OS and CAAC-OS, which are metal oxides, will be described. In this specification, CAC represents an example of a function or material configuration, and CAAC represents a crystal structure. This shows an example of

[0192] <Metal oxide composition> CAC-OS or CAC-metal oxide is a material that has the function of conductivity in some parts. The material has an insulating function in part and a semiconductor function in the whole. In addition, CAC-OS or CAC-metal oxide is used as the active layer of a transistor. When used, the conductive function is the function of allowing electrons (or holes) to flow as carriers, and the insulating function is the function of allowing electrons (or holes) to flow as carriers. The insulating function is the function of preventing the flow of electrons that act as carriers. By making these functions work complementarily, the switching function (On / Off) The function of making it possible to make CAC-OS or CAC-metal oxide In CAC-OS or CAC-metal oxide, each function is separated. By combining these, the functions of both can be maximized.

[0193] In addition, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region are formed at the nanoparticle level in the material. The conductive and insulating regions may be separated by a thin film. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0194] In addition, in the CAC-OS or CAC-metal oxide, a conductive region and an insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0195] In addition, CAC-OS and CAC-metal oxide have different band gaps. For example, CAC-OS or CAC-metal oxide e is a component with a wide gap due to the insulating region and a narrow gap due to the conductive region. In this configuration, when a carrier is flowed, In the component with a narrow gap, carriers mainly flow. The component having a narrow gap acts complementary to the component having a wide gap. Carriers also flow to the wide gap component in conjunction with the CA component. C-OS or CAC-metal oxide is used for the channel formation region of the transistor. When the transistor is turned on, the transistor has a high current driving capability, i.e., a large on-state current. High field effect mobility can be obtained.

[0196] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite), or metal matrix composite It can also be called atrix composite.

[0197] <Metal oxide structure> Oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS and polycrystalline oxide semiconductors. , nc-OS(nanocrystalline oxide semiconductor or), pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductors and amorphous oxide semiconductors.

[0198] CAAC-OS has a c-axis orientation and multiple nanocrystals are connected in the ab-plane direction. The crystal structure is distorted by the connection of multiple nanocrystals. In the region, the lattice arrangement is changed between a region with a uniform lattice arrangement and another region with a uniform lattice arrangement. This refers to the point where the direction of the

[0199] Nanocrystals are basically hexagonal, but are not limited to regular hexagonal shapes. They may also have non-regular hexagonal shapes. In addition, the distortion may have lattice arrangements such as pentagons and heptagons. In CAAC-OS, clear grain boundaries are observed even near the strain. It is not possible to confirm the presence of grain boundaries due to distortion of the lattice arrangement. This is because the CAAC-OS has a structure similar to that of the ab-plane. The oxygen atoms are not densely packed, and the bond distance between atoms changes due to the substitution of metal elements. This is thought to be because distortion can be tolerated by, for example,

[0200] In addition, the CAAC-OS has a layer containing indium and oxygen (hereinafter referred to as an In layer) and an element A layered crystal structure consisting of layers containing M, zinc, and oxygen (hereinafter referred to as the (M,Zn) layer). (also called layer structure). Indium and element M are mutually substitutable. When the element M in the (M,Zn) layer is replaced with indium, the (In,M,Zn) layer Also, when indium in the In layer is substituted with element M, (In,M) It can also be expressed as a layer.

[0201] CAAC-OS is an oxide semiconductor with high crystallinity. Since it is not possible to confirm the grain boundaries, the decrease in electron mobility caused by the grain boundaries occurs. In addition, the crystallinity of oxide semiconductors can be degraded by the inclusion of impurities, the generation of defects, and the like. Therefore, CAAC-OS is an oxide semiconductor with few impurities and defects (oxygen vacancies, etc.). Therefore, oxide semiconductors with CAAC-OS have stable physical properties. Therefore, oxide semiconductors having CAAC-OS are heat-resistant and highly reliable. In addition, CAAC-OS is designed to withstand the high temperatures (so-called thermal budget) in the manufacturing process. Therefore, when a CAAC-OS is used for an OS transistor, This allows for greater freedom.

[0202] nc-OS is a material that can be used in microscopic areas (e.g., areas between 1 nm and 10 nm, especially areas between 1 nm and 10 nm). The atomic arrangement is periodic in the region of 3 nm or less. There is no regularity in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the film. Therefore, depending on the analytical method, nc-OS may be classified as a-like OS or amorphous oxide semiconductor. It may be indistinguishable from the body.

[0203] The a-like OS is an oxide semiconductor with a structure between the nc-OS and amorphous oxide semiconductor. A-like OS has pores or low density regions. The OS has lower crystallinity than the nc-OS and CAAC-OS.

[0204] Oxide semiconductors have a variety of structures, each of which has different characteristics. The oxide semiconductors in The compound may have two or more of the c-OS and CAAC-OS.

[0205] <Transistors containing oxide semiconductors> Next, a case where the oxide semiconductor is used in a transistor will be described.

[0206] By using the oxide semiconductor for a transistor, a transistor with high field-effect mobility can be realized. Furthermore, a highly reliable transistor can be realized.

[0207] In addition, an oxide semiconductor with a low carrier concentration is preferably used for the transistor. When the carrier concentration of the oxide semiconductor film is reduced, the impurity concentration in the oxide semiconductor film is In this specification and the like, the impurity concentration is low, and the defect level density is low. A low density of defect states is called high purity intrinsic or substantially high purity intrinsic.

[0208] Furthermore, a highly purified intrinsic or substantially highly purified intrinsic oxide semiconductor film has a low density of defect states. Therefore, the trap level density may also be low.

[0209] In addition, the time required for the charges trapped in the trap levels of the oxide semiconductor to disappear is Therefore, the trap level density is high. A transistor in which a channel formation region is formed in an oxide semiconductor has unstable electrical characteristics. This may be the case.

[0210] Therefore, in order to stabilize the electrical characteristics of a transistor, it is necessary to reduce the impurities in the oxide semiconductor. In order to reduce the impurity concentration in the oxide semiconductor, It is preferable to reduce the impurity concentration in the adjacent film. , alkali metals, alkaline earth metals, iron, nickel, silicon, etc.

[0211] <Impurities> Here, the influence of each impurity in an oxide semiconductor will be described.

[0212] When oxide semiconductors contain silicon or carbon, which are elements of Group 14, they are oxidized. Defect levels are formed in semiconductors, which is why defects in silicon and carbon in oxide semiconductors The concentration of silicon and carbon near the interface with the oxide semiconductor (secondary ion mass spectrometry) (SIMS: Secondary Ion Mass Spectrometry) The concentration obtained is 2 x 10 18 atoms / cm 3 Less than or equal to 2 x 10 17 a toms / cm 3 The following applies.

[0213] In addition, when an oxide semiconductor contains an alkali metal or an alkaline earth metal, defect levels are formed. Therefore, alkali metals or alkaline earth metals A transistor using an oxide semiconductor containing such a compound tends to be normally on. Therefore, it is possible to reduce the concentration of alkali metals or alkaline earth metals in the oxide semiconductor. Specifically, the alkali metal or aluminum in the oxide semiconductor obtained by SIMS is preferably The concentration of potassium earth metals is 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 Do the following:

[0214] In addition, when nitrogen is contained in an oxide semiconductor, electrons that serve as carriers are generated, and As a result, the nitrogen-containing oxide semiconductor becomes a semiconductor. Therefore, the transistor used for the oxide semiconductor In the above, it is preferable that nitrogen is reduced as much as possible. For example, The nitrogen concentration was 5×10 19 atoms / cm 3 Less than 5x 10 18 atoms / cm 3 Less than or equal to 1×10 18 atoms / cm 3 below , and more preferably 5 × 10 17 atoms / cm 3 The following applies.

[0215] In addition, hydrogen contained in oxide semiconductors reacts with oxygen that bonds with metal atoms to form water. When hydrogen enters the oxygen vacancy, the electron carrier In addition, some of the hydrogen atoms may bond with the oxygen atoms that bond with the metal atoms, forming chiral ions. Therefore, oxide semiconductors containing hydrogen can generate electrons, which are carriers. Therefore, a transistor using an oxide semiconductor tends to be normally on. It is preferable that the amount of hydrogen is reduced as much as possible. Specifically, in the oxide semiconductor, The hydrogen concentration obtained by SIMS was 1×10 20 atoms / cm 3 Less than, preferably 1×10 19 atoms / cm 3 less than 5 × 10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Less than.

[0216] By using an oxide semiconductor with sufficiently reduced impurities for a channel formation region of a transistor, This makes it possible to impart stable electrical properties.

[0217] This embodiment can be implemented in appropriate combination with the configurations described in other embodiments. It is possible.

[0218] (Fourth embodiment) This embodiment mode will be described with reference to an example of an electronic device in which the semiconductor device or the like shown in the above embodiment mode is incorporated. This will be explained with reference to FIG.

[0219] The robot 7100 is equipped with a light sensor, microphone, camera, speaker, and display. , various sensors (infrared sensors, ultrasonic sensors, acceleration sensors, piezo sensors, optical sensors, The electronic component 100A or 100D is provided with a sensor (such as a gyro sensor) and a movement mechanism. , and functions as a switch for controlling the power supply for driving these peripheral devices.

[0220] The microphone has the function of detecting acoustic signals such as the user's voice and environmental sounds. The speaker also has the function of emitting audio signals such as voice and warning sounds. The bot 7100 analyzes the audio signal input via the microphone and The audio signal can be emitted from the speaker. It is possible to communicate with the user using a microphone and speaker. is.

[0221] The camera has a function of capturing images of the surroundings of the robot 7100. The robot 7100 has the function of moving using a movement mechanism. The robot 7100 uses a camera to capture the surroundings. It can capture images of the vehicle and analyze them to detect whether there are any obstacles when moving around. .

[0222] The flying object 7120 has a propeller, a camera, a battery, etc., and flies autonomously. The electronic component 100A or 100D has a function of supplying power to drive these peripheral devices. It functions as a switch to control

[0223] The cleaning robot 7140 has a display on the top surface and multiple cameras on the sides. The electronic component 100A or 100D has a lens, a brush, an operation button, various sensors, etc. , functioning as a switch for controlling the power supply for driving these peripheral devices. Although not shown, the cleaning robot 7140 is equipped with tires, a suction nozzle, etc. The cleaning robot 7140 moves on its own, detects dirt, and removes it from the suction port on its bottom. It can be aspirated.

[0224] The automobile 7160 has an engine, tires, brakes, a steering device, a camera, etc. The sub-component 100A or 100D is a power supply for controlling the power supply for driving these peripheral devices. It functions as a switch.

[0225] The electronic component 100A or 100D is a TV device 7200 (television receiver), a smartphone Smartphones 7210, PCs (personal computers) 7220, 7230, game consoles 7 240, game console 7260, etc.

[0226] For example, the electronic component 100A or 100D built into the TV device 7200 is 200. The power supply for driving the power supply 200 functions as a switch.

[0227] The smartphone 7210 is an example of a mobile information terminal. The electronic component 10 includes a microphone, a camera, a speaker, various sensors, and a display unit. 0A or 100D is a switch to control the power supply to drive these peripheral devices. It functions as such.

[0228] The PC7220 and PC7230 are examples of notebook PCs and desktop PCs, respectively. The C7230 is equipped with a keyboard 7232 and a monitor device 7233, which can be connected wirelessly or by wire. The game console 7240 is an example of a portable game console. This is an example of a stationary game console. The game console 7260 can be equipped with a wireless or wired controller. 7262 is connected to the electronic component 100A or 100D. It functions as a switch to control the power supply.

[0229] This embodiment may be implemented in appropriate combination with the configurations described in other embodiments. is possible.

[0230] (Notes regarding the present specification) The above-described embodiments and the respective components in the embodiments will be described below with additional notes.

[0231] The configurations shown in each embodiment may be appropriately combined with the configurations shown in other embodiments or examples. In addition, one embodiment may include a plurality of configurations. When examples are shown, the configuration examples can be combined as appropriate.

[0232] It should be noted that the contents (or even a part of the contents) described in one embodiment may be used in the implementation of the embodiment. Another content (or part of the content) described in the form, and / or one or more other implementations The contents (or a part of the contents) described in the embodiments may be applied, combined, or replaced. You can do things like drawing.

[0233] The contents described in the embodiments are explained using various drawings in each embodiment. This refers to the content stated in the specification or the content stated using the text in the specification.

[0234] In addition, a drawing (or a part thereof) described in one embodiment may be replaced with another part of the drawing. , another figure (or a part thereof) described in the embodiment, and / or one or more By combining the figures (or a part thereof) described in other embodiments of the present invention, This allows for even more diagrams to be constructed.

[0235] In addition, in the block diagrams in this specification, components are classified by function and are independent of each other. However, in actual circuits, the components are divided into functional blocks. It is difficult to separate the functions into separate parts, and there are cases where multiple functions are involved in one circuit, or where a circuit is involved in multiple circuits. Therefore, the blocks in the block diagram may be The present invention is not limited to the components described above, and may be rephrased appropriately depending on the situation.

[0236] In addition, in the drawings, the size, layer thickness, and area are shown at arbitrary scales for the convenience of explanation. Therefore, the drawings are not necessarily limited to the scale. The drawings are merely schematic illustrations for the purpose of clarity, and are not limited to the shapes or values ​​shown in the drawings. fluctuations in signal, voltage, or current due to noise, or signal due to timing deviations These may include variations in signal, voltage, or current.

[0237] In addition, the positional relationships of the components shown in the drawings are relative. When describing components by reference, the terms "above" and "below" that indicate positional relationships are used for convenience. The positional relationship of the components is not limited to the contents described in this specification, and may vary depending on the situation. It can be rephrased appropriately depending on the situation.

[0238] In this specification and the like, when describing the connection relationship of a transistor, The other of the source and drain is called the "source or drain" (or the first electrode or the first terminal). The term "second electrode" or "second terminal" is used. The source and drain of the transistor change depending on the transistor structure or operating conditions. Regarding the names of the source and drain of a transistor, It can be rephrased as a source (drain) electrode or the like as appropriate depending on the situation.

[0239] In addition, the terms "electrode" and "wiring" used in this specification and the like refer to these components functionally. This is not a limitation. For example, an "electrode" may be used as part of a "wiring." , and vice versa. Furthermore, the terms "electrode" and "wiring" may be used interchangeably with "electrodes" and "wiring." This also includes cases where the wiring is formed integrally.

[0240] In this specification and the like, the terms voltage and potential can be interchanged as appropriate. The potential difference from the reference potential. For example, the reference potential is the ground voltage (earth If we use the term "voltage", we can translate voltage into potential. Ground potential is not necessarily 0V. It does not necessarily mean that the potential is relative, and depending on the reference potential, The potential applied to wiring etc. may be changed.

[0241] In this specification, a node may be a terminal, a wiring, or the like depending on a circuit configuration, a device structure, or the like. The term "electrode," "conductive layer," "conductor," "impurity region," etc. may also be used. Lines and the like can be referred to as nodes.

[0242] In this specification, "A and B are connected" means that A and B are electrically connected. Here, A and B are electrically connected to each other. Objects (switches, transistor elements, diodes, etc.), or the elements and A connection that allows transmission of electrical signals between A and B when there is a circuit (including wiring, etc.) If A and B are electrically connected, it is considered that A and B are directly connected. Here, A and B being directly connected means that they are connected via the above object. Instead, electrical signals can be transmitted between A and B via wiring (or electrodes) etc. In other words, a direct connection is a connection that can be seen as the same circuit diagram when expressed as an equivalent circuit. This refers to the connection that can be made.

[0243] In this specification, a switch refers to a device that can be in a conducting state (ON state) or a non-conducting state (OFF state). It refers to a device that has the function of controlling whether or not current flows by entering a state where it is in a non-operating state. A switch is a device that has the function of selecting and switching a path through which a current flows.

[0244] In this specification and the like, the channel length is, for example, the length of a semiconductor the body (or the part of the semiconductor through which current flows when the transistor is on) and the gate The distance between the source and drain in the region where they overlap or where the channel is formed. It means separation.

[0245] In this specification, the channel width is, for example, the width of a semiconductor (or a transistor) when it is in an on state. The area where the gate electrode overlaps with the gate electrode (the area where current flows in the semiconductor when the gate electrode is in the non-transistor state), or the channel The length of the portion where the source and drain face each other in the region where the capacitor is formed. .

[0246] In this specification, the terms "film" and "layer" are used in some cases or in other situations. For example, the term "conductive layer" can be used interchangeably with " It may be possible to change the term to "conductive film." In some cases, the term "insulating layer" can be changed to the term "insulating layer." [Explanation of symbols]

[0247] 10: semiconductor device, 10A: semiconductor device, 10B: semiconductor device, 10C: semiconductor device, 1 0D: Semiconductor device, 10E: Semiconductor device, 11: Device, 11A: Device, 11B: Device, 11C: device, 11D: device, 12: silicon substrate, 20: semiconductor device 21A: conductor, 21B: conductor, 22A: conductor, 22B: conductor, 23: transformer Transistor, 23A: Transistor, 23B: Transistor, 23B_1: Transistor, 2 3B_2: transistor, 23C: transistor, 23D: transistor, 23R: region , 24A: opening, 24B: opening, 25: transistor, 25A: oxide layer, 25B: Oxide layer, 26: transistor, 26A: gate electrode, 26B: gate electrode, 26B_1 :Conductor, 26B_2:Conductor, 27A:Region, 27B:Region, 28:Oxide layer, 29: Conductor, 30: Electrode layer, 31A: Conductor, 31B: Conductor, 51A: Area, 51B: Area , 60: Battery protection circuit, 61: Battery, 100A: Electronic component, 100B: Electronic component, 100 C: Electronic component, 100D: Electronic component, 101: Substrate, 102: Adhesive layer, 103: Resin layer, 104A: Metal wiring, 104B: Metal wiring, 105A: Electrode, 105B: Electrode, 106: Housing, 107: heat sink, 199: power storage device, 320: insulator, 322: insulator, 3 24: Insulator, 326: Insulator, 328: Conductor, 330: Conductor, 350: Insulator, 3 52: Insulator, 354: Insulator, 356: Conductor, 402: Insulator, 404: Insulator, 5 03: conductor, 503a: conductor, 503b: conductor, 510: insulator, 512: insulator , 514: insulator, 516: insulator, 518: conductor, 520: insulator, 522: insulator , 524: insulator, 530: oxide, 530a: oxide, 530b: oxide, 530c: Oxide, 530c1: oxide, 530c2: oxide, 540a: conductor, 540b: conductor body, 542: conductor, 542a: conductor, 542b: conductor, 543a: region, 543b : area, 544: insulator, 546: conductor, 548: conductor, 550: insulator, 552: Insulator, 560: Conductor, 560a: Conductor, 560b: Conductor, 574: Insulator, 58 0: Insulator, 581: Insulator, 582: Insulator, 586: Insulator, 610: Conductor, 61 2: Conductors, 7100: Robots, 7120: Flying objects, 7140: Cleaning robots, 716 0: Automobile, 7200: TV device, 7210: Smartphone, 7220: PC, 723 0: PC, 7232: keyboard, 7233: monitor device, 7240: game console, 726 0: Game console, 7262: Controller

Claims

[Claim 1] A silicon substrate; a device disposed above the silicon substrate; the device includes a transistor and a conductor; the transistor has a metal oxide in a channel formation region; The silicon substrate is made conductive, The conductor is electrically connected to the drain of the transistor and the silicon substrate through an opening provided in the device.

Images