Information processing apparatus, temperature control method, and heat treatment apparatus

Abstract

To provide a technique for more accurately predicting a temperature change of a substrate to be treated after carrying into a treatment container.SOLUTION: An information processing apparatus that performs temperature control in a treatment container of a heat treatment apparatus includes: a measurement temperature acquisition unit that acquires a measurement temperature of a member that holds a substrate to be heat-treated and is carried into and out of the treatment container of the heat treatment apparatus, before the member is carried into the treatment container; a prediction unit that outputs a predicted temperature of the substrate to be treated after the member is carried into the treatment container, using the measurement temperature of the member and a heat simulation model of the heat treatment apparatus; and an adjustment unit that outputs a set temperature, adjusted based on the predicted temperature of the substrate to be treated, to a temperature control unit that controls a heating unit to heat the interior of the treatment container such that a measurement temperature inside the treatment container approaches the set temperature.SELECTED DRAWING: Figure 5

Description

[Technical Field]

[0001] The present disclosure relates to an information processing apparatus, a temperature control method, and a heat treatment apparatus. [Background technology]

[0002] For example, a heat treatment apparatus supplies gas into a processing vessel containing wafers and applies a predetermined heat treatment to the wafers by heating them with a heater. The temperature control of the heat treatment apparatus is performed by providing a temperature sensor (e.g., Outer T / C) that measures the temperature near the heater and a temperature sensor (e.g., Inner T / C) that measures the temperature inside the processing vessel, and the heating by the heater is controlled using the measured temperatures.

[0003] BACKGROUND ART Conventionally, there is known a technique for adjusting heater power so as to reduce the influence of a built-up film formed inside a processing chamber of a heat treatment apparatus on the temperature of a wafer (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 2024-27930 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique for more accurately predicting the temperature change of a substrate to be processed after it is loaded into a processing chamber. [Means for solving the problem]

[0006] One aspect of the present disclosure is an information processing device that controls the temperature within a processing vessel of a heat treatment device, and includes a measured temperature acquisition unit that acquires a measured temperature of a component that holds a substrate to be processed and is carried into and out of the processing vessel before the component is carried into the processing vessel, a prediction unit that uses the measured temperature of the component and a thermal simulation model of the heat treatment device to output a predicted temperature of the substrate to be processed after the component is carried into the processing vessel, and an adjustment unit that outputs the set temperature, adjusted according to the predicted temperature of the substrate to be processed, to a temperature control unit that controls a heating unit that heats the processing vessel so that the measured temperature within the processing vessel approaches a set temperature. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to more accurately predict the temperature change of a substrate to be processed after it is loaded into a processing chamber. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a longitudinal sectional view schematically showing a heat treatment apparatus according to an embodiment of the present invention. [Figure 2] FIG. 2 is a cross-sectional view showing the outline of the configuration of a heat treatment furnace. [Figure 3] FIG. 2 is a diagram showing an example of a measurement point at which a non-contact thermometer measures temperature. [Figure 4] FIG. 10 is an explanatory diagram showing an example of temperature transitions in the lid, boat, and heat-retaining cylinder. [Figure 5] FIG. 2 is a functional configuration diagram of an example of a control unit of the heat treatment apparatus according to the present embodiment. [Figure 6] 10 is a flowchart illustrating an example of a processing procedure of a heat treatment apparatus that does not utilize a temperature measured by a non-contact thermometer. [Figure 7] 10 is a flowchart illustrating an example of a processing procedure of the heat treatment apparatus according to the present embodiment, which utilizes a temperature measured by a non-contact thermometer. [Figure 8] 1 is a configuration diagram of an example of an information processing system according to an embodiment of the present invention. [Figure 9] FIG. 2 is a diagram illustrating a hardware configuration of an example of a computer. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, the present embodiment will be described with reference to the drawings.

[0010] FIG. 1 is a vertical cross-sectional view schematically illustrating a heat treatment apparatus 10 according to this embodiment. The heat treatment apparatus 10 of FIG. 1 includes a vertical heat treatment furnace 60, and wafers W are held and accommodated in a boat 44 at predetermined intervals along the vertical direction, and various heat treatments such as oxidation, diffusion, and low-pressure CVD can be performed on the wafers W. The following describes an example in which the surface of the wafers W in the processing vessel 65 is heat-treated by supplying a gas into the processing vessel 65. The wafers W are an example of a substrate to be processed. The substrate to be processed is not limited to a circular wafer W.

[0011] 1 includes a mounting table 20, a housing 30, and a control unit 100. The mounting table 20 is sometimes called a load port. The mounting table 20 is provided at the front of the housing 30. The housing 30 includes a working area 40 and a heat treatment furnace 60.

[0012] The working area 40 is sometimes called a loading area. The working area 40 is provided in the lower part of the housing 30. The heat treatment furnace 60 is provided in the housing 30 and above the working area 40. A base plate 31 is provided between the working area 40 and the heat treatment furnace 60.

[0013] The mounting table 20 is used to load and unload the wafers W into and from the housing 30. Storage containers 21 and 22 are placed on the mounting table 20. The storage containers 21 and 22 are airtight storage containers (FOUPs) that have a detachable lid (not shown) on the front and can store multiple wafers W (for example, about 25 wafers W) at predetermined intervals.

[0014] An alignment device 23 may be provided below the mounting table 20 to align in one direction a cutout portion (e.g., a notch) provided on the outer periphery of the wafer W transferred by the transfer mechanism 47. The alignment device 23 is also called an aligner.

[0015] In the working area 40, wafers W are transferred between the storage containers 21 and 22 and the boat 44. Also, in the working area 40, the boat 44 is loaded into the processing container 65 and unloaded from the processing container 65. The working area 40 is provided with a door mechanism 41, a shutter mechanism 42, a lid 43, the boat 44, a base 45a, a base 45b, a lifting mechanism 46 shown in FIG. 2 , a transfer mechanism 47, a heat-retaining cylinder 48, and a non-contact thermometer 51.

[0016] The door mechanism 41 removes the lids of the storage containers 21 and 22, opening the interiors of the storage containers 21 and 22 to the working area 40. The shutter mechanism 42 is provided above the working area 40 so as to cover (or block) the furnace opening 68a in order to suppress or prevent high-temperature heat from the furnace from being released into the working area 40 from the furnace opening 68a when the lid 43 is open.

[0017] The lid 43 has a rotation mechanism 49. The heat-retaining cylinder 48 is provided on the lid 43. The heat-retaining cylinder 48 prevents the boat 44 from being cooled by heat transfer to the lid 43 side, and keeps the boat 44 warm.

[0018] The rotation mechanism 49 is attached to the lower part of the lid body 43. The rotation mechanism 49 rotates the boat 44. The rotation shaft of the rotation mechanism 49 passes through the lid body 43 airtightly and is provided to rotate a turntable arranged on the lid body 43.

[0019] The lifting mechanism 46 drives the lid 43 to move up and down when the boat 44 is carried from the working area 40 into the processing vessel 65 and from the processing vessel 65 to the working area 40. When the boat 44 raised by the lifting mechanism 46 is carried into the processing vessel 65, the lid 43 abuts against the furnace opening 68a to seal the furnace opening 68a.

[0020] The boat 44 on the lid 43 can rotatably hold the wafer W in the processing vessel 65 in a horizontal plane. The heat treatment apparatus 10 may have a plurality of boats 44. The working area 40 in FIG. 1 is provided with boats 44a and 44b. The working area 40 is also provided with a base 45a, a base 45b, and a boat transfer mechanism.

[0021] The bases 45a and 45b are mounting tables onto which the boats 44a and 44b are respectively transferred from the lid 43. The boat transfer mechanism transfers the boat 44a or 44b from the lid 43 onto the bases 45a or 45b.

[0022] The boats 44a and 44b are made of, for example, quartz, and can horizontally mount large-diameter wafers W, for example, 300 mm in diameter, at a predetermined interval (pitch width) in the vertical direction. The boats 44a and 44b are provided with a plurality of (for example, three) support columns between the top plate and the bottom plate. The support columns are provided with claws for holding the wafers W. The boats 44a and 44b may also be provided with auxiliary columns as appropriate in addition to the support columns.

[0023] The transfer mechanism 47 transfers wafers W between the storage container 21 or 22 and the boat 44a or 44b. The transfer mechanism 47 has a base 57, a lifting arm 58, and a plurality of transfer plates 59. The transfer plates 59 are sometimes called forks.

[0024] The base 57 is provided so as to be movable up and down and rotatable. The lifting arm 58 is provided so as to be movable up and down (so as to be liftable) by a ball screw or the like. The base 57 is provided on the lifting arm 58 so as to be horizontally rotatable.

[0025] The non-contact thermometer 51 measures the temperatures of the lid 43, the boat 44, and the thermal insulation tube 48 in the work area 40. The non-contact thermometer 51 is, for example, a radiation thermometer or a thermoviewer. A radiation thermometer is a thermometer that measures the temperature of an object without contact by measuring the intensity of infrared rays emitted from the object. A thermoviewer is a thermometer that measures the temperature distribution on the surface of an object without contact. The non-contact thermometer 51 may be a device that measures the temperature distribution on the surface of an object without contact by utilizing an infrared camera image taken by an infrared camera.

[0026] The non-contact thermometer 51 is provided in a position where it can measure the temperatures of the lid 43, boat 44, and heat-retaining cylinder 48 in the work area 40. The non-contact thermometer 51 in FIG. 1 is provided above the work area 40 to measure the temperatures of the lid 43, boat 44, and heat-retaining cylinder 48 in the work area 40 from above the work area 40. It is desirable to provide the non-contact thermometer 51 in FIG. 1 in a position where the temperature is unlikely to rise. Furthermore, the non-contact thermometer 51 in FIG. 1 may be air-cooled with an inert gas or water-cooled as necessary.

[0027] Fig. 2 is a cross-sectional view showing an outline of the configuration of a heat treatment furnace 60. The heat treatment furnace 60 in Fig. 2 is an example of a vertical furnace for accommodating a plurality of thin, disk-shaped wafers W and subjecting them to a predetermined heat treatment. The heat treatment furnace 60 includes a jacket 62, a heater 63, a space 64, and a treatment container 65.

[0028] The processing vessel 65 accommodates the wafers W held in the boat 44. The wafers W accommodated in the processing vessel 65 are subjected to heat treatment. The processing vessel 65 is made of, for example, quartz and has a vertically elongated shape. The processing vessel 65 is supported on a base plate 66 via a manifold 68 at the bottom. Gas is supplied from the manifold 68 to the processing vessel 65 through an injector 71. The injector 71 supplies gas into the processing vessel 65 from a blowing portion (hole). The injector 71 is connected to a gas supply source 72. The gas supplied to the processing vessel 65 is exhausted through an exhaust port 73 from an exhaust system 74 equipped with a vacuum pump capable of reducing pressure.

[0029] The lid 43 closes the furnace port 68a at the bottom of the manifold 68 when the boat 44 is loaded into the processing vessel 65. The lid 43 is provided so as to be movable up and down by a lifting mechanism 46. A heat-retaining cylinder 48 is placed on the top of the lid 43. The boat 44, which carries a large number of wafers W at predetermined intervals in the vertical direction, is provided on the top of the heat-retaining cylinder 48.

[0030] Jacket 62 is provided to cover the periphery of processing vessel 65 and defines a space 64 around processing vessel 65. Jacket 62 has a cylindrical shape similar to processing vessel 65. Jacket 62 is supported by a base plate 66. A heat insulating material 62a made of, for example, glass wool may be provided inside jacket 62 and outside space 64.

[0031] The heater 63 is provided to surround the processing vessel 65. For example, the heater 63 is provided inside the jacket 62 and outside the space 64. The heater 63 heats the processing vessel 65 and also heats the wafers W held in the boat 44, i.e., the wafers W in the processing vessel 65. In this way, the heater 63 functions as a heating unit that heats the wafers W.

[0032] The heater 63 includes a heating resistor such as a carbon wire, and controls the temperature of the gas flowing inside the space 64, and can heat and control the inside of the processing vessel 65 to a predetermined temperature (for example, 50 to 1200° C.).

[0033] The space 64 and the space inside the processing vessel 65 are divided into a plurality of unit areas along the vertical direction, for example, 10 unit areas A1, A2, A3, A4, A5, A6, A7, A8, A9, and A10. The heater 63 is divided into 63-1 to 63-10 along the vertical direction so as to correspond to any of the unit areas A1 to A10.

[0034] Each of the heaters 63-1 to 63-10 is configured so that heating can be controlled independently for each of the unit areas A1 to A10 by the output (heater power) of a heater power control unit 86 including, for example, a thyristor.

[0035] 2 shows an example in which space 64 and the space within processing vessel 65 are divided into 10 unit areas along the vertical direction. The number of unit areas is not limited to 10, and space 64 and the space within processing vessel 65 may be divided into numbers other than 10. Although FIG. 2 shows equal divisions, this is not limiting, and the vicinity of furnace opening 68a, where temperature changes are large, may be divided into smaller areas. Heaters 63 may be provided at different positions along the vertical direction, and do not have to be provided in one-to-one correspondence with each of unit areas A1 to A10.

[0036] Heater temperature sensors Ao1-Ao10 are provided in the space 64 as Outer T / C to measure temperatures corresponding to the unit areas A1-A10, respectively. Furthermore, in the space within the processing vessel 65, in-processing vessel temperature sensors Ai1-Ai10 are provided as Inner T / C to measure temperatures corresponding to the unit areas A1-A10, respectively. The heater temperature sensors Ao1-Ao10 and in-processing vessel temperature sensors Ai1-Ai10 measure temperatures to measure the temperature distribution along the vertical direction. The temperatures measured by the in-processing vessel temperature sensors Ai1-Ai10 are an example of the measured temperatures within the processing vessel 65.

[0037] The temperatures measured by the heater temperature sensors Ao1 to Ao10 are input to the control unit 100 via a line 81. The temperatures measured by the process vessel internal temperature sensors Ai1 to Ai10 are input to the control unit 100 via a line 82. The control unit 100, to which the measured temperatures are input, controls the heater power supplied to the heaters 63-1 to 63-10 by a heater power control unit 86, as will be described later. The heater power control unit 86 also supplies the heater power adjusted by the control unit 100, as will be described later, to the heaters 63-1 to 63-10 via a heater output line 87 and a heater terminal 88.

[0038] The heat treatment furnace 60 may also include a cooling mechanism 90 for cooling the treatment vessel 65. The cooling mechanism 90 includes, for example, a blower 91, an air blower pipe 92, and an exhaust pipe 94. The blower 91 is sometimes called a blower.

[0039] The blower 91 blows a cooling gas, such as air, into the space 64 in which the heater 63 is provided to cool the processing vessel 65. The blower pipe 92 sends the cooling gas blown from the blower 91 to the heater 63. The blower pipe 92 is connected to each of the ejection holes 92a-1 to 92a-10 and supplies the cooling gas to the space 64.

[0040] The exhaust pipe 94 is for discharging air from the space 64. An exhaust port 94a is provided in the space 64 for discharging the cooling gas from the space 64. One end of the exhaust pipe 94 is connected to the exhaust port 94a.

[0041] 2, the heat treatment furnace 60 may be provided with a heat exchanger 95 in the exhaust pipe 94, with the other end of the exhaust pipe 94 connected to the suction side of the blower 91. The cooling gas exhausted through the exhaust pipe 94 may be heat exchanged in the heat exchanger 95, returned to the blower 91, and circulated for reuse, rather than being discharged into the factory exhaust system. In this case, the cooling gas may be circulated through an air filter (not shown). Alternatively, the cooling gas exhausted from the space 64 may be discharged from the exhaust pipe 94 through the heat exchanger 95 into the factory exhaust system.

[0042] The blower 91 may be configured so that the air volume of the blower 91 can be controlled by controlling the power supplied from a power supply unit 91a including an inverter, for example, in response to an output signal from the control unit 100.

[0043] The control unit 100 is realized by, for example, a computer 500 as described below. The control unit 100 reads a program recorded in a storage device, and sends control signals to each component of the heat treatment apparatus 10 in accordance with the program to perform the heat treatment. Furthermore, for example, the control unit 100 can more accurately predict the temperature change of the wafer W after it is loaded into the processing chamber 65 by adjusting the heater power supplied to the heater 63 by the heater power control unit 86 as described below.

[0044] 3 is a diagram showing examples of measurement points where the non-contact thermometer 51 measures the temperature. Measurement points A and B are examples of measurement points set on the support of the boat 44. Measurement points C and D are examples of measurement points set on the thermal insulation cylinder 48. Measurement point E is an example of a measurement point set on the lid 43.

[0045] Note that the measurement of measurement points A to E by non-contact thermometer 51 may be performed by rotating lid 43, boat 44, and heat-retaining cylinder 48. For example, the measurement of measurement points A to B by non-contact thermometer 51 measures the temperature rise range, for example, at the support portion of boat 44. The measurement of measurement points C to D by non-contact thermometer 51 measures the temperature of the entire circumference of heat-retaining cylinder 48. The measurement of measurement point E by non-contact thermometer 51 measures the temperature of the entire circumference of lid 43. The measurement of measurement points C to E by non-contact thermometer 51 may use an average measured temperature.

[0046] As shown in the temperature transition in Fig. 4, the temperatures of the lid 43, the boat 44, and the heat-retaining cylinder 48 rise during loading into the processing vessel 65, and fall during unloading from the processing vessel 65. Fig. 4 is an explanatory diagram showing an example of the temperature transition of the lid 43, the boat 44, and the heat-retaining cylinder 48. Fig. 4 shows the temperature transition at measurement points A to D among measurement points A to E shown in Fig. 3.

[0047] The default temperatures at measurement points A to D shown in FIG. 4 are all uniform at 31.8°C. During loading, the temperatures at measurement points A to D rise due to heating by heater 63. The temperature rise rate at measurement points A to D during loading shown in FIG. 4 varies due to differences in the thermal capacities of boat 44 and thermal insulation tube 48. Such differences in the rate of temperature rise at measurement points A to D during loading may cause variations in the temperature change of wafer W from loading to the start of processing. Therefore, in the current recipe, the time from loading to the start of processing is set to be longer to suppress variations in the temperature of wafer W at the start of processing.

[0048] During unloading, the temperatures of measurement points A to D decrease. The temperatures of measurement points A to D during unloading shown in FIG. 4 vary due to differences in the rate at which the temperature decreases, which are caused by differences in the heat capacities of boat 44 and heat-insulating cylinder 48. The lid 43, boat 44, and heat-insulating cylinder 48 are examples of members with relatively large heat capacities. The heat-insulating cylinder 48 is an example of a member with a larger heat capacity than the lid 43 and boat 44. As shown in FIG. 4, the temperatures of measurement points A to D during unloading may vary depending on the interval between unloading and loading of the next batch.

[0049] Figure 4 shows an example in which the time from the initial state to the next batch is 9,300 seconds (2 hours and 35 minutes). On the other hand, if the start of the next batch is to wait until the temperature reaches the same level as that of measurement points A to D in the initial state, it will take 39,600 seconds (11 hours).

[0050] When the interval between unloading and loading of the next batch becomes long, the temperature at measurement points C and D of heat-retaining cylinder 48, which has a large heat capacity, drops significantly. When the interval between unloading and loading of the next batch becomes long, the temperature change of wafer W from loading to the start of processing may differ due to the drop in temperature of heat-retaining cylinder 48, which has a large heat capacity.

[0051] Therefore, in the heat treatment apparatus 10 according to this embodiment, the temperature of a member having a relatively large heat capacity before loading is measured by the non-contact thermometer 51, and this is used to predict the temperature of the wafer W after loading, thereby improving the accuracy of the predicted temperature of the wafer W after loading. By improving the accuracy of the predicted temperature of the wafer W after loading, the heat treatment apparatus 10 according to this embodiment adjusts the heater power supplied to the heater 63 using the predicted temperature of the wafer W as described below, thereby preventing variations in the temperature of the wafer W at the start of processing.

[0052] The control unit 100 of the heat treatment apparatus 10 is realized by, for example, the functional configuration shown in Fig. 5. Fig. 5 is a functional configuration diagram of an example of the control unit 100 of the heat treatment apparatus 10 according to this embodiment. Note that the functional block diagram of Fig. 5 omits illustration of components that are not necessary for explaining this embodiment.

[0053] The control unit 100 executes a program to implement a prediction unit 102, an adjustment unit 104, a temperature control unit 106, and a measured temperature acquisition unit 108. The prediction unit 102 uses a thermal simulation model 110 and a machine learning model 112 of 1DCAE.

[0054] The control unit 100 is an example of an information processing device that controls the temperature inside the processing vessel 65 of the heat treatment device 10. The measured temperature acquisition unit 108 acquires the measured temperatures of components (e.g., the lid 43, the boat 44, and the heat-retaining cylinder 48) that hold the wafer W to be heat-treated and are carried into and out of the processing vessel 65 before they are carried into the processing vessel 65. The measured temperatures of the components before they are carried into the processing vessel 65 are acquired from the non-contact thermometer 51.

[0055] The measured temperature of the component before being carried into the processing vessel 65 may be the temperature of one or more measurement points on the heat-insulating cylinder 48, which has the largest heat capacity. Furthermore, the measured temperature of the component before being carried into the processing vessel 65 may include at least one of the temperatures of one or more measurement points on the boat 44 and the temperatures of one or more measurement points on the lid 43, in addition to the temperatures of one or more measurement points on the heat-insulating cylinder 48.

[0056] The prediction unit 102 uses the measured temperatures of the components that hold the wafer W to be heat-treated and are being carried into and out of the processing vessel 65 and a thermal simulation model of the heat treatment device 10 to output the predicted temperature of the wafer W after the components are carried into the processing vessel 65.

[0057] 5 uses a thermal simulation model 110 of the 1DCAE of the heat treatment apparatus 10 to output a first predicted temperature of the wafer W after the components are loaded into the processing vessel 65. The thermal simulation model 110 of the 1DCAE of the heat treatment apparatus 10 is a physical model that reproduces the configuration of FIG. 2. The thermal simulation model 110 of the 1DCAE is a thermal model that outputs predicted temperatures of the components and the wafer W in the processing vessel 65 according to the heater power determined by the temperature control unit 106. The thermal simulation model 110 of the 1DCAE models the relationship between heat exchange and specific heat of components such as the components of the processing vessel 65 and the wafer W.

[0058] In the heat treatment apparatus 10 according to this embodiment, the measured temperature of the component before it is loaded into the processing vessel 65 is fed back to the 1DCAE thermal simulation model 110, thereby improving the accuracy of the first predicted temperature of the wafer W after the component is loaded into the processing vessel 65. In this way, the 1DCAE thermal simulation model 110 adds radiant heat transfer paths such as the lid 43, the boat 44, and the heat-retaining cylinder 48, thereby improving the accuracy of the first predicted temperature of the wafer W.

[0059] In addition, the thermal simulation model 110 of the 1DCAE of the heat treatment apparatus 10 may calculate the difference between the measured temperature when processing is performed according to the process parameters and the predicted temperature predicted according to the process parameters, and may be adjusted to reduce the difference.

[0060] The control unit 100 of the heat treatment apparatus 10 can realize a so-called digital twin, which reproduces in virtual (cyber) space, in conjunction with the changes in temperature in the real (physical) space inside the processing vessel 65 of the heat treatment apparatus 10 during heat treatment, by utilizing the thermal simulation model 110 of the 1DCAE of the heat treatment apparatus 10. In the digital twin, the temperature state of the wafer W inside the processing vessel 65 of the heat treatment apparatus 10 can be reproduced in virtual space while the heat treatment is being performed in the heat treatment apparatus 10.

[0061] The prediction unit 102 also uses the machine learning model 112 to output a second predicted temperature of the wafer W after the component is loaded into the processing chamber 65. The machine learning model 112 is a model (thermal model) that has learned the relationship between the set temperature, the film formation processing time, and the film formation result through machine learning, for example, when the heat treatment is a film formation process. The machine learning model 112 may use the 1DCAE thermal simulation model 110 for machine learning. For example, when the heat treatment is a film formation process, the machine learning model 112 may be used as a function (process optimizer function) that optimizes the set temperature and the film formation processing time while adjusting the relationship between the set temperature, the film formation processing time, and the film formation result through machine learning. The process optimizer function, for example, feeds back the results of the film formation process and calculates process parameters that approach the target film thickness. By repeating this calculation and learning, the process optimizer can optimize the process parameters to approach the target film thickness. The process optimizer can also optimize the set temperature to suppress temperature variations of the wafer W at the start of the film formation process, for example.

[0062] The adjustment unit 104 outputs the set temperature adjusted according to the predicted temperature of the wafer W to the temperature control unit 106. For example, the adjustment unit 104 may output the set temperature adjusted according to the first predicted temperature of the wafer W to the temperature control unit 106, may output the set temperature adjusted according to the second predicted temperature of the wafer W to the temperature control unit 106, or may output the set temperature adjusted according to the first and second predicted temperatures of the wafer W to the temperature control unit 106.

[0063] The adjustment unit 104 may also adjust the set temperature output to the temperature control unit 106 so as to align the time from when the member is carried into the processing vessel 65 until when the heat treatment according to the recipe is started.

[0064] The temperature control unit 106 acquires the set temperature of the wafer W included in the process parameters of the process executed in the heat treatment apparatus 10. The temperature control unit 106 outputs the set temperature of the wafer W to the adjustment unit 104 and acquires the set temperature adjusted by the adjustment unit 104. The temperature control unit 106 acquires the measured temperature of Outer T / C and the measured temperature of Inner T / C.

[0065] Furthermore, the temperature control unit 106 performs feedback control on the heater power control unit 86 so that the temperature measured by the InnerT / C in the processing vessel 65 approaches the set temperature adjusted by the adjustment unit 104. The heater power control unit 86 supplies heater power to the heater 63 in accordance with the heater power control signal output from the temperature control unit 106.

[0066] The measured temperature of OuterT / C and the measured temperature of InnerT / C may be used in the processing of the prediction unit 102 and the adjustment unit 104. The heater power determined by the temperature control unit 106 may be used in the processing of the prediction unit 102 and the adjustment unit 104. The control unit 100 executes processing in the heat treatment apparatus 10 in accordance with the process parameters.

[0067] FIG. 6 is a flowchart showing an example of a processing procedure of the heat treatment apparatus 10 that does not use the temperature measured by the non-contact thermometer 51.

[0068] In step S10, the heat treatment apparatus 10 transfers (charges) the wafers W from, for example, the storage container 22 or 22 to the boat 44.

[0069] In step S12, the heat treatment apparatus 10 loads the boat 44, in which the wafers W are charged, into the processing chamber 65.

[0070] In step S14, the heat treatment apparatus 10 starts the process according to the recipe after the temperature inside the process vessel 65 has stabilized. In step S16, the heat treatment apparatus 10 ends the process.

[0071] In step S18, the heat treatment apparatus 10 unloads the boat 44, in which the wafers W are charged, from the processing chamber 65.

[0072] In step S20, the heat treatment apparatus 10 transfers (discharges) the wafers W from the boat 44 to the storage container 22 or 22.

[0073] In step S22, if there is a next batch to be processed, the heat treatment apparatus 10 returns to step S10 and processes the next batch. If there is no next batch to be processed, the heat treatment apparatus 10 ends the processing of the flowchart in FIG.

[0074] 6 , the longer the interval between unloading the boat 44 in step S18 and loading the boat 44 in step S12 for the next batch processing, the lower the temperatures of the lid 43, the boat 44, and the heat-retaining cylinder 48 become. As described above, the lid 43, the boat 44, and the heat-retaining cylinder 48 have a relatively large heat capacity, which may cause variations in the time it takes for the temperature of the wafers W in the processing vessel 65 to stabilize. If variations occur in the temperature of the wafers W in the processing vessel 65 at the start of processing, the results of the batch processing, such as the film formation results, may fluctuate. For this reason, the current recipe sets a longer time between loading and the start of processing to suppress variations in the temperature of the wafers W at the start of processing, thereby suppressing fluctuations in the results of the batch processing, such as the film formation results.

[0075] FIG. 7 is a flowchart showing an example of a processing procedure of the heat treatment apparatus 10 according to this embodiment, which utilizes the temperature measured by the non-contact thermometer 51.

[0076] In step S30, the heat treatment apparatus 10 charges the wafers W from the storage container 21 or 22, for example, into the boat 44.

[0077] In step S32, the heat treatment apparatus 10 loads the boat 44 in which the wafers W are charged into the processing chamber 65.

[0078] In step S34, the prediction unit 102 of the control unit 100 uses the measured temperatures of the components that hold the wafer W to be heat-treated and are carried into and out of the processing vessel 65 and the thermal simulation model of the heat treatment device 10 as described above to output the predicted temperature of the wafer W after the components are carried into the processing vessel 65.

[0079] The adjustment unit 104 outputs the set temperature adjusted according to the predicted temperature of the wafer W to the temperature control unit 106. As described above, the set temperature adjusted by the adjustment unit 104 is adjusted so that heating by the heater 63 does not cause variations in the temperature of the wafer W in the processing container 65 at the start of processing. Therefore, in the heat treatment apparatus 10 according to this embodiment, variations in the temperature of the wafer W in the processing container 65 at the start of processing are suppressed.

[0080] In step S36, the heat treatment apparatus 10 starts the process according to the recipe after the temperature inside the process vessel 65 has stabilized. In step S38, the heat treatment apparatus 10 ends the process.

[0081] In step S40, the heat treatment apparatus 10 unloads the boat 44, in which the wafers W are charged, from the processing chamber 65.

[0082] In step S42, the heat treatment apparatus 10 discharges the wafers W from the boat 44 into the storage container 21 or 22.

[0083] In step S44, if there is a next batch to be processed, the heat treatment apparatus 10 performs the process of step S46. In step S46, the non-contact thermometer 51 of the heat treatment apparatus 10 measures the temperatures of members with large heat capacities, such as the lid body 43, the boat 44, and the thermal insulation tube 48, and outputs the measured temperatures to the control unit 100. After the process of step S46, the heat treatment apparatus 10 returns to step S30 and processes the next batch. Note that the timing of the temperature measurement by the non-contact thermometer 51 shown in FIG. 7 is just an example, and the measurement may be performed during or after the process of step S40. Furthermore, if there is no next batch to be processed in the process of step S44, the heat treatment apparatus 10 ends the process of the flowchart in FIG. 7.

[0084] In the processing of the flowchart of Figure 7, the measured temperature of a component with a large heat capacity actually measured by the non-contact thermometer 51 is used to predict the temperature of the wafer W in the processing vessel 65, thereby improving the accuracy of the predicted temperature of the wafer W after loading.

[0085] 7, even if the interval between unloading the boat 44 in step S40 and loading the boat 44 in step S32 in the processing of the next batch becomes long, the heater 63 can be controlled to prevent variations in the temperature of the wafers W at the start of processing. As a result, the heat treatment apparatus 10 according to this embodiment can suppress variations in the temperature of the wafers W at the start of processing, thereby suppressing fluctuations in the results of batch processing, such as film formation results.

[0086] 7, the heater 63 can be controlled to uniform the time from loading to the start of processing so as to prevent variations in the time it takes for the temperature of the wafer W in the processing vessel 65 to stabilize. As a result, in the heat treatment apparatus 10 according to this embodiment, it is not necessary to set a longer time from loading to the start of processing, and productivity can be expected to improve.

[0087] In the above-described embodiment, the processing performed by the control unit 100 of the heat treatment device 10 may be executed by another information processing device connected to the control unit 100 so as to be able to perform data communication.

[0088] 8 is a configuration diagram of an example of an information processing system according to this embodiment. The information processing system shown in Fig. 8 includes a heat treatment apparatus 10, an autonomous controller 210, an apparatus controller 220, a host computer 230, an external measuring device 240, and an analysis server 250.

[0089] The heat treatment apparatus 10, the autonomous controller 210, the apparatus controller 220, the host computer 230, the external measuring device 240, and the analysis server 250 are communicably connected via a network such as a LAN (Local Area Network).

[0090] The heat treatment apparatus 10 executes a process in accordance with control commands (process parameters) output from the apparatus controller 220. The autonomous controller 210 is a controller for autonomously controlling the heat treatment apparatus 10, and performs a simulation of the process state being executed in the heat treatment apparatus 10 using a simulation model.

[0091] An autonomous controller 210 is provided for each heat treatment device 10. The autonomous controller 210 executes at least a part of the processing that is performed by the control unit 100 in the above embodiment.

[0092] The equipment controller 220 is a controller having a computer configuration for controlling the heat treatment apparatus 10. The equipment controller 220 outputs process parameters for controlling control components of the heat treatment apparatus 10 to the heat treatment apparatus 10. The host computer 230 is an example of a man-machine interface (MMI) that receives instructions for the heat treatment apparatus 10 from an operator and provides information related to the heat treatment apparatus 10 to the operator.

[0093] The external measuring instrument 240 is a measuring instrument that measures the results after a process is executed in accordance with process parameters, such as a film thickness measuring instrument, a sheet resistance measuring instrument, a particle measuring instrument, etc. For example, the external measuring instrument 240 measures the degree of film adhesion on a wafer W such as a monitor wafer.

[0094] The analysis server 250 performs data analysis and the like required for the processing executed by the autonomous controller 210. The analysis server 250 may perform machine learning to create a machine learning model 112 for the heat treatment device 10 using data collected from a plurality of heat treatment devices 10.

[0095] 8 is just an example, and it goes without saying that there are various system configuration examples depending on the application and purpose. The classification of devices such as the heat treatment device 10, the autonomous controller 210, the device controller 220, the host computer 230, the external measuring device 240, and the analysis server 250 in FIG. 8 is just an example.

[0096] For example, the information processing system can have various configurations, such as a configuration in which at least two of the heat treatment device 10, autonomous control controller 210, device control controller 220, host computer 230, external measuring device 240, and analysis server 250 are integrated, or a configuration in which they are further divided.

[0097] The autonomous controller 210, the device controller 220, the host computer 230, and the analysis server 250 of the information processing system shown in Fig. 8 are realized by, for example, a computer having the hardware configuration shown in Fig. 9. The control unit 100 of the heat treatment device 10 described above is also realized by a computer having the hardware configuration shown in Fig. 9. Fig. 9 is a hardware configuration diagram of an example of a computer.

[0098] The autonomous controller 210, the device controller 220, the host computer 230, the analysis server 250, and the control unit 100 are an example of an information processing device that controls the temperature inside the processing chamber 65 of the heat treatment device 10.

[0099] 9 includes an input device 501, an output device 502, an external I / F (interface) 503, a RAM (random access memory) 504, a ROM (read only memory) 505, a CPU (central processing unit) 506, a communication I / F 507, and an HDD (hard disk drive) 508, all of which are interconnected by a bus B. The input device 501 and the output device 502 may be connected and used when necessary.

[0100] The input device 501 is a keyboard, mouse, touch panel, etc., and is used by an operator or the like to input various operation signals. The output device 502 is a display, etc., and displays the results of processing by the computer 500. The communication I / F 507 is an interface that connects the computer 500 to a network. The HDD 508 is an example of a non-volatile storage device that stores programs and data.

[0101] The external I / F 503 is an interface with an external device. The computer 500 can read and / or write data from and to a recording medium 503a such as an SD (Secure Digital) memory card via the external I / F 503. The ROM 505 is an example of a non-volatile semiconductor memory (storage device) that stores programs and data. The RAM 504 is an example of a volatile semiconductor memory (storage device) that temporarily stores programs and data.

[0102] The CPU 506 is a computing device that controls the entire computer 500 and realizes its functions by reading programs and data from storage devices such as the ROM 505 and HDD 508 onto the RAM 504 and executing the processes.

[0103] The autonomous controller 210, the device controller 220, the host computer 230, and the analysis server 250 of the information processing system shown in Fig. 8 can realize various functions by the hardware configuration of the computer 500 shown in Fig. 9. The control unit 100 of the heat treatment device 10 described above can also realize various functions by the hardware configuration of the computer 500 shown in Fig. 9.

[0104] The autonomous controller 210 executes a simulation of a physical model using the process parameters of the heat treatment apparatus 10, thereby realizing a digital twin of the actual heat treatment apparatus 10 and the simulated heat treatment apparatus 10. By comparing in real time information (such as measured temperature) obtained from the heat treatment apparatus 10 during heat treatment with information (such as predicted temperature) obtained by the simulation, it is possible to predict the temperature of the wafer W at the start of heat treatment and execute processing to reduce fluctuations in the film formation results.

[0105] By utilizing the technology of the above-described embodiment, the heat treatment apparatus 10 according to this embodiment can suppress variations in the temperature of the wafer W at the start of processing, and can shorten the time from loading to the start of processing, thereby contributing to improved productivity.

[0106] The measurement point at which non-contact thermometer 51 measures the temperature is a factor that directly affects the temperature variation of wafer W at the start of processing. By using the temperature of the component measured by non-contact thermometer 51 before loading boat 44 to predict the temperature of wafer W in processing chamber 65, heat treatment apparatus 10 according to this embodiment can accurately predict the temperature of wafer W in processing chamber 65.

[0107] Although the preferred embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the present invention. [Explanation of symbols]

[0108] 10 Heat treatment device 44 Boat 51 Non-contact thermometer 63, 63-1 to 63-10 Heater 65 Processing vessel 100 control section 102 Prediction Department 104 Adjustment section 106 Temperature control unit 108 Measured temperature acquisition section 110 1DCAE thermal simulation model 112 Machine Learning Models 210 Autonomous Controller 220 Equipment Controller 230 Host Computer 240 External Measuring Instrument 250 analysis servers 500 computers Ai1~Ai10 Temperature sensors inside the processing vessel W wafer

Claims

1. An information processing device that controls the temperature inside a processing vessel of a heat treatment device, a temperature measurement unit for measuring a temperature of a member that holds a substrate to be heat-treated and is carried into and out of the processing chamber before the member is carried into the processing chamber; a prediction unit that uses the measured temperature of the member and a thermal simulation model of the heat treatment apparatus to output a predicted temperature of the substrate to be processed after the member is carried into the treatment vessel; an adjusting unit that outputs the set temperature adjusted according to the predicted temperature of the substrate to a temperature control unit that controls a heating unit that heats the inside of the processing vessel so that the measured temperature in the processing vessel approaches the set temperature; An information processing device having the above.

2. The measured temperatures of the members include the measured temperatures of a heat-insulating member for keeping the temperature of a holding member for the substrate to be processed.

2. The information processing device according to claim 1.

3. 3. The information processing apparatus according to claim 2, wherein the measured temperatures of the members further include a measured temperature of a holding member for the substrate to be processed and a measured temperature of a lid member on which the holding member is placed.

4. The measured temperature acquisition unit acquires the measured temperature of the member measured using a non-contact thermometer. The information processing device according to claim 1 .

5. The adjustment unit adjusts the set temperature so that the time from when the member is carried into the processing vessel to when the heat treatment according to a recipe is started is uniform. The information processing device according to claim 1 .

6. The prediction unit outputting a first predicted temperature of the substrate to be processed after the member is carried into the processing chamber using a thermal simulation model of a 1DCAE of the heat treatment apparatus; Using the trained machine learning model of the heat treatment apparatus, a second predicted temperature of the substrate to be processed after the member is carried into the processing vessel is output. The information processing device according to claim 1 .

7. A temperature control method for an information processing apparatus for controlling the temperature inside a processing vessel of a heat treatment apparatus, comprising: acquiring a measured temperature of a member that holds a substrate to be heat-treated and is carried into and out of the processing vessel before the member is carried into the processing vessel; outputting a predicted temperature of the substrate to be processed after the member is carried into the processing chamber using the measured temperature of the member and a thermal simulation model of the heat treatment apparatus; outputting the set temperature adjusted according to the predicted temperature of the substrate to a temperature control unit that controls a heating unit that heats the inside of the processing vessel so that the measured temperature in the processing vessel approaches the set temperature; A temperature control method comprising:

8. A heat treatment apparatus that controls a temperature inside a treatment vessel and performs heat treatment on a substrate to be treated inside the treatment vessel, a member that holds the substrate to be processed and carries it into and out of the processing chamber; a first measured temperature output unit that outputs a measured temperature of the member before the member is carried into the processing chamber; a second measured temperature output unit that outputs a measured temperature inside the processing vessel after the member is carried into the processing vessel; a prediction unit that uses the measured temperature of the member and a thermal simulation model of the heat treatment apparatus to output a predicted temperature of the substrate to be processed after the member is carried into the treatment vessel; an adjusting unit that outputs the set temperature adjusted according to the predicted temperature of the substrate to a temperature control unit that controls a heating unit that heats the inside of the processing vessel so that the measured temperature in the processing vessel approaches the set temperature; A heat treatment device comprising:

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