Organic semiconductor material and method of manufacturing the same, semiconductor device, diode, and transistor

Abstract

To provide an organic semiconductor material with a dopant having a concentration distribution and a method of manufacturing the same, and a semiconductor device having the organic semiconductor material.SOLUTION: An organic semiconductor material contains a liquid-crystalline organic compound (A), and a dopant material (B) including an electronic donor material and / or electronic acceptor material. The liquid-crystalline organic compound (A) constitutes a crystal film. The dopant material (B) spacially has a concentration distribution in the crystal film.SELECTED DRAWING: Figure 1A

Description

[Technical Field]

[0001] The present disclosure relates to organic semiconductor materials and methods for their manufacture, semiconductor devices, diodes, and transistors. [Background technology]

[0002] Organic semiconductors have attracted attention because they have properties that differ from silicon semiconductors, such as the ability to be manufactured using printing processes and the ability to fabricate flexible devices. Among organic semiconductors, organic molecules that exhibit liquid crystallinity have flexible hydrocarbon chains and aromatic conjugated moieties with π electrons responsible for charge transport. The inventors have demonstrated that these flexible hydrocarbon chains retain fluidity even in the liquid crystal phase, and by evaluating their charge transport properties, they have demonstrated that ionic conduction, in which the molecules themselves move, occurs in the liquid crystal phase (Non-Patent Document 1, etc.). This ionic conduction occurs when impurity molecules that have trapped charge move in response to an electric field. They have also discovered that liquid crystal molecules can be used as crystalline films (solid films) when cooled while maintaining their molecular orientation (Non-Patent Document 2, etc.), and have developed materials that exhibit excellent transistor properties (Non-Patent Document 3, etc.). Furthermore, the present inventors have disclosed liquid crystalline organic semiconductor materials, organic semiconductor devices, and the like in Patent Documents 1 and 2. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-149659 [Patent Document 2] Japanese Patent Application Laid-Open No. 2015-053497 [Non-patent literature]

[0004] [Non-Patent Document 1] H. Iino et al., J. Phys. Chem. B (2005), 109, 22120-22125. [Non-patent document 2] H. Iino et al., Jpn. J. Appl. Phys. (2006), 45, 33, L867-L870. [Non-patent document 3] H. Iino et al., Nature. Communications (2015), 6:6828. Summary of the Invention [Problem to be solved by the invention]

[0005] Depending on the application of semiconductor devices, spatial concentration distribution of dopants may be required. Furthermore, in semiconductor devices, from the viewpoint of improving device performance and reliability, it is required to reduce the contact resistance between the semiconductor and the electrode, and further to achieve ohmic contact.

[0006] The present disclosure has been made in view of the above-mentioned problems, and aims to provide an organic semiconductor material having a dopant concentration distribution, a method for producing the same, and a semiconductor device including the organic semiconductor material. [Means for solving the problem]

[0007] The present disclosure includes the following aspects. [1] A liquid crystalline organic compound (A) and a dopant material (B) containing an electron donor material and / or an electron acceptor material, The liquid crystalline organic compound (A) forms a crystalline film, the dopant material (B) has a spatial concentration distribution in the crystal film; Organic semiconductor materials. [2] The organic semiconductor material according to [1], wherein the liquid crystalline organic compound (A) is represented by the following formula (I): Ar 1 -(R 1 ) n …(I) In formula (I), Ar 1is a group that forms a π-electron conjugated system containing an aromatic ring, R 1 each independently represents an alkyl group which may have a substituent and which may have a heteroatom between the carbon atoms, n is an integer of 1 to 8. [3] The organic semiconductor material according to [1] or [2], wherein the concentration of the dopant material (B) is 1 ppm to 100,000 ppm. [4] The organic semiconductor material according to any one of [1] to [3], wherein the dopant material (B) is unevenly distributed at a part of the interface. [5] The organic semiconductor material according to [1], wherein an electrode is disposed on the part of the interface. [6] The organic semiconductor material according to [5], wherein the current-voltage characteristic between the partial interface and the electrode is linear at least in the range of 0.5 V to 1.0 V. [7] A method for producing an organic semiconductor material according to any one of [1] to [6], forming a film containing a liquid crystalline organic compound (A) and a dopant material (B) containing an electron donor material and / or an electron acceptor material; A part or all of the liquid crystalline organic compound (A) in the film is in a liquid crystal phase or a liquid phase, and the dopant material (B) is in an ionized state, applying an electric field to the film; The method for producing an organic semiconductor material includes converting the liquid crystalline organic compound (A) into a crystalline phase while maintaining an electric field, thereby generating a concentration distribution of the dopant material (B) in the crystalline film. [8] A semiconductor device comprising the organic semiconductor material according to any one of [1] to [6]. [9] A diode comprising the organic semiconductor material according to any one of [1] to [6] and a pair of electrodes.

[10] A transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer, the organic semiconductor layer is the organic semiconductor material according to any one of [4] to [6], the dopant material (B) comprises an electron acceptor material; a source electrode disposed at the interface where the electron acceptor material is unevenly distributed.

[11] A transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer, the organic semiconductor layer is the organic semiconductor material according to any one of [4] to [6], the dopant material (B) comprises an electron donor material; a drain electrode disposed at the interface where the electron donor material is unevenly distributed; [Effects of the Invention]

[0008] The present disclosure provides an organic semiconductor material having a dopant concentration distribution, a method for producing the same, and a semiconductor device including the organic semiconductor material. [Brief explanation of the drawings]

[0009] [Figure 1A] FIG. 2 is a schematic diagram for explaining the configuration of an organic semiconductor material. [Figure 1B] FIG. 2 is a schematic diagram for explaining the configuration of an organic semiconductor material. [Figure 2A] 1A to 1C are schematic diagrams illustrating a manufacturing process of an organic semiconductor material. [Figure 2B] 1A to 1C are schematic diagrams illustrating a manufacturing process of an organic semiconductor material. [Figure 3A] 1 is a graph showing current-voltage characteristics of an example. [Figure 3B] 1 is a graph showing current-voltage characteristics of an example. [Figure 4A] 10 is a graph showing current-voltage characteristics of a comparative example. [Figure 4B] 10 is a graph showing current-voltage characteristics of a comparative example. [Figure 5A] 1 is a graph showing current-voltage characteristics of an example. [Figure 5B] 1 is a graph showing current-voltage characteristics of an example. [Figure 5C] 1 is a graph showing current-voltage characteristics of an example. [Figure 6] 10 is a graph showing the results of evaluation of transistors in Examples. [Figure 7] 10 is a graph showing the results of evaluation of transistors in Examples. [Figure 8] 10 is a graph showing the evaluation results of a transistor of a comparative example. DETAILED DESCRIPTION OF THE INVENTION

[0010] The present invention will be described below through embodiments. For clarity of explanation, the following description and drawings may be simplified as appropriate, and the scale of each component may differ significantly. Matters necessary for implementing the present invention that are not specifically mentioned in this specification can be understood as design matters for those skilled in the art based on the prior art in the field. Terms used in this specification that specify shapes, geometric conditions, and their degrees, such as "parallel," "perpendicular," "orthogonal," and "identical," are not to be construed as being limited to their strict meanings, but rather as including the range of degrees to which similar functions can be expected. The symbol "to" indicating a range of values ​​includes the upper and lower limits unless otherwise specified. When a chemical formula contains a plurality of identical symbols, the identical symbols may represent the same structure or may represent different structures within a specified range. In addition, in this specification, "ppm" indicates μg / g.

[0011] [Organic semiconductor materials] 1A and 1B are schematic diagrams illustrating the structure of an organic semiconductor material according to the present disclosure. The organic semiconductor material 100 of this embodiment contains a liquid crystalline organic compound (A) 10 and a dopant material (B) 20, and is characterized in that the liquid crystalline organic compound (A) forms a crystalline film and the dopant material (B) has a spatial concentration distribution in the crystalline film. In the example of Fig. 1A, the dopant material (B) is unevenly distributed in a portion of the interface 30 and its vicinity 40. In the example of Fig. 1B, the dopant material (B) is unevenly distributed in a portion of the region 42. In addition, Figs. 1A and 1B show, as an example, a first electrode 51 and a second electrode 52 disposed at the interface of the organic semiconductor material.

[0012] In the example of Figure 1A, the organic semiconductor 100 is used by placing an electrode 51 at the interface 30 where the dopant material (B) 20 is unevenly distributed, so that the contact between the interface 30 and the electrode 51 can be ohmic contact or a state close to it, and the contact resistance between the organic semiconductor material 100 and the electrode 51 can be reduced. The low contact resistance is indicated by the current-voltage characteristic being linear from a low voltage, and specifically, the current-voltage characteristic between the organic semiconductor of this embodiment and the electrode is, for example, linear at least in the range of 0.5 V to 1.0 V, and preferably linear in the range of 0.2 V to 1.0 V. Furthermore, the organic semiconductor of this embodiment has a current rise voltage of, for example, 0.1 to 0.3 V.

[0013] Furthermore, since the dopant material (B) is dispersed throughout the organic semiconductor material 100, charge transfer occurs between the dopant material (B) and the liquid crystalline organic compound (A), and high mobility can be achieved. In the organic semiconductor material of this embodiment, the liquid crystalline organic compound (A) is a crystalline film (solid film). By forming it into a crystalline film, the diffusion of the dopant material (B) is suppressed, and the contact state between the interface 30 and the electrode 51 is maintained. The crystalline film may be a single crystal film or a polycrystalline film. The organic semiconductor material of this embodiment can achieve high mobility even in the case of a polycrystalline film. The mobility of the organic semiconductor material of this embodiment is, for example, 10 -4 cm 2 / Vs or more, preferably 0.01 cm 2 / Vs or more, and more preferably 0.1 cm 2 / Vs or more, and more preferably 1 cm 2 The upper limit of the mobility is not particularly limited, but is, for example, 50 cm 2 / Vs or less.

[0014] The film thickness of the organic semiconductor material is not particularly limited and may be adjusted appropriately depending on the application of the organic semiconductor material, but from the viewpoint of ease of production, it is preferably 5 nm to 100 μm, more preferably 10 nm to 10 μm, and even more preferably 20 nm to 1 μm.

[0015] In the example of Fig. 1A, the interface 30 where the dopant material (B) is unevenly distributed is preferably provided at least in a portion where an electrode is in contact with the interface, and for example, the dopant material (B) may also be unevenly distributed in a portion of the interface where no electrode is disposed. A portion of the dopant material (B) may be exposed at the interface 30. The position of the interface 30 may be appropriately designed depending on the application of the organic semiconductor material, and may be provided, for example, on the main surface or side surface of the crystal film.

[0016] 1A, the range 40 of the interface where the dopant material (B) is unevenly distributed represents, for example, a range within 500 nm, 1 μm, or 5 μm from the interface 30, and uneven distribution means that the concentration of the dopant material (B) in the vicinity 40 is at least twice that of the dopant material (B) outside the vicinity. Such an organic semiconductor material achieves both high mobility and low contact resistance.

[0017] The concentration distribution of the dopant material (B) can be determined by measuring the distribution of elements characteristic of the dopant molecule using methods such as secondary ion mass spectrometry (TOF-SIMS) or energy dispersive X-ray spectroscopy (SEM-EDX).

[0018] The concentration of the dopant material (B) is sufficient to be 1 ppm or more, preferably 5 ppm or more, more preferably 10 ppm or more, even more preferably 50 ppm or more, and particularly preferably 100 ppm or more, based on the total amount of the organic semiconductor material. On the other hand, the upper limit of the concentration of the dopant material (B) is not particularly limited, but 100,000 ppm is sufficient, and 40,000 ppm or less is preferable, more preferably 20,000 ppm or less, and even more preferably 15,000 ppm or less. Next, the components that make up the organic semiconductor material will be described.

[0019] <Liquid crystal organic compound (A)> In this embodiment, the liquid crystalline organic compound (A) is a compound that can take a liquid crystal phase at least at a certain temperature and can form a crystalline phase capable of transporting charges. The liquid crystalline organic compound (A) may be a rod-shaped compound or a discotic compound. The liquid crystalline organic compound (A) is preferably a compound represented by the following formula (I): Z 1 -(Y 1 -R 1 ) n …(I) In formula (I), Z 1 is a group that forms a π-electron conjugated system containing an aromatic ring, Y 1 each independently represents -O-, -S-, -Se-, -CO-, -OCO-, -COO-, -N=CH-, -CONH-, -NH-, -NHCOO-, or a single bond, R 1 each independently represents an alkyl group which may have a substituent and which may have -O-, -S-, -Se-, -CO-, -OCO-, -COO-, -N=CH-, -CONH-, -NH- or -NHCOO- between carbon atoms, n is an integer of 1 to 8.

[0020] R 1 The alkyl group is a linear or branched alkyl group having 1 or more carbon atoms, preferably 4 or more carbon atoms, and more preferably 4 to 30 carbon atoms.

[0021] Z 1 Specific examples of Z include structures represented by the following formulas: 1 is the residue obtained by removing R from the formula below, where R is a hydrogen atom and Y 1 R 1 or other substituents such as halogen atoms, and at least one of the R in the molecule is Y 1 R 1 and R 11 is an aryl group which may have a substituent, or Y 1 R1 represents Ar 2 represents an aryl group which may have a substituent, and m1 is an integer of 1 or more, preferably 2 to 4. The phthalocyanine ring shown below may be coordinated to a metal element. Examples of the substituent which the aryl group may have include a halogen atom, Y 1 R 1 etc.

[0022] [ka]

[0023] [ka]

[0024] The liquid crystalline organic compound (A) is preferably a compound represented by the above formula (1), and specific examples include the following compounds.

[0025] [ka]

[0026] <Dopant Material (B)> In the organic semiconductor material of this embodiment, the dopant material (B) is an ionizable compound that transfers charge to the liquid crystalline organic compound (A) or an electrode. The dopant material (B) may be an electron donor material that donates electrons to the liquid crystalline organic compound (A) or an electrode, or may be an electron acceptor material that accepts electrons from the liquid crystalline organic compound (A) or an electrode and donates holes.

[0027] An example of the dopant material (B) is a compound capable of causing a charge transfer between HOMO and LUMO with the liquid crystalline organic compound (A). The electron donor material is a compound whose highest occupied molecular orbital (HOMO) energy level is shallower than the lowest unoccupied molecular orbital (LUMO) energy level of the liquid crystalline organic compound (A) and the work function of the electrode, and the energy gap is preferably 0.1 to 1.0 eV, more preferably 0.2 to 0.8 eV. The electron acceptor material is a compound whose LUMO energy level is deeper than the HOMO energy level of the liquid crystalline organic compound (A) and the work function of the electrode, and the energy gap is preferably 0.1 to 1.0 eV, more preferably 0.2 to 0.8 eV.

[0028] Specific examples of such compounds include the following compounds.

[0029] [ka]

[0030] Another example of the dopant material (B) is a Lewis acid. Specific examples of the Lewis acid include iron chloride (FeCl3), molybdenum oxide (MoO3), and the following compounds:

[0031] [ka]

[0032] The molecular weight of the dopant material (B) is preferably 800 or less, more preferably 140 to 500. By using a compound with a relatively small molecular weight, the dopant material (B) can be easily localized at the interface during production of the organic semiconductor material of this embodiment.

[0033] [Method of manufacturing organic semiconductor materials] The method for producing an organic semiconductor material of this embodiment includes the steps of: forming a film containing a liquid crystalline organic compound (A) and a dopant material (B); The liquid crystalline organic compound (A) in the film is in a liquid crystal phase or a liquid phase, and the dopant material (B) is in an ionized state, applying an electric field to the film; The liquid crystalline organic compound (A) is made into a crystalline phase while maintaining the electric field, thereby generating a concentration distribution of the dopant material (B) in the crystalline film.

[0034] To form a film, first, a composition containing a liquid crystalline organic compound (A) and a dopant material (B) is prepared. A known method can be used to form the film. For example, a coating film of the composition may be formed on a substrate by a known printing method or coating method. Alternatively, the composition may be poured into a mold (cell) of a desired shape.

[0035] Next, an electric field is applied to the film while the liquid crystalline organic compound (A) in the film is in a liquid crystal phase or a liquid phase and the dopant material (B) is in an ionized state. The liquid crystalline organic compound (A) can be brought into a liquid crystal phase or a liquid phase, for example, by heating it to a liquid crystal phase temperature or higher. The method for ionizing the dopant material (B) may be appropriately selected depending on the type of the dopant material (B). For example, the method may be thermal excitation by heating, photoexcitation by light irradiation, or ionization may be performed by disposing a pair of electrodes on the film and injecting charges from the electrodes. The electric field may be applied to the membrane by applying a potential difference between the pair of electrodes to generate the electric field, or by placing the membrane in an external electric field.

[0036] A specific example of the above process will be described with reference to Figures 2A and 2B. Figures 2A and 2B are schematic diagrams for explaining the process for producing an organic semiconductor material, with Figure 2A being a schematic diagram before an electric field is applied and Figure 2B being a schematic diagram after an electric field is applied. As shown in FIG. 2A, the dopant material (B) is distributed almost uniformly in the film during film formation. When a voltage is applied to the electrode 51 side as the positive electrode, charge transfer occurs between the liquid crystalline organic compound (A) and the dopant material (B). For example, holes 11 are generated in the liquid crystalline organic compound (A), and the dopant material (B) becomes an anion 21. Then, as shown in FIG. 2B, the holes 11 are transported to the ground electrode 52, and the anionized dopant material (B) moves toward the electrode 51 (sweeping). This allows the dopant material (B) to be unevenly distributed at and near the interface with the electrode. By maintaining the electric field and cooling the film, the liquid crystalline organic compound (A) becomes crystalline, and the dopant material (B) is fixed, thereby obtaining the organic semiconductor material.

[0037] [Semiconductor Devices] The present disclosure further provides a semiconductor device including the organic semiconductor material of the above embodiment. Examples of organic semiconductor devices to which the organic semiconductor material can be applied include diodes, organic transistors, memories, photodiodes, light-emitting diodes, light-emitting transistors, sensors such as gas sensors, biosensors, blood sensors, immune sensors, artificial retinas, and taste sensors, and RFID tags.

[0038] Among these, the organic semiconductor material of the present invention has a thickness of 0.1 cm 2 Since the organic transistor has a high charge mobility of 1 / Vs or more, its application to organic transistors is particularly useful. Organic transistors can be suitably used as switching transistors for pixels constituting displays, signal driver circuit elements, memory circuit elements, signal processing circuit elements, etc. Examples of displays include liquid crystal displays, dispersion-type liquid crystal displays, electrophoretic displays, particle rotation-type display elements, electrochromic displays, organic electroluminescence displays, and electronic paper.

[0039] An organic transistor usually comprises a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and an organic semiconductor layer. There are various types of transistors depending on the arrangement of each electrode and each layer, but the organic semiconductor material of the present invention is not limited to the type of transistor and can be used in any transistor. [Example]

[0040] The present invention will be described in more detail below with reference to examples and comparative examples, but the present invention is not limited to these examples.

[0041] [Sample preparation] Two samples were prepared by mixing the liquid crystalline organic semiconductor Ph-BTBT-10 with the electron acceptor material F4-TCNQ at 1000 ppm and 10000 ppm.

[0042] [ka]

[0043] [Example 1, Comparative Examples 1 and 2] A sample doped with 1000 ppm of F4-TCNQ was melt-injected between the electrodes to form a crystalline film, forming a sandwich-structured element. This element is designated as Comparative Example 1. Next, the device was heated to 150°C (liquid crystal phase temperature) and +20V was applied for 5 minutes to sweep F4-TCNQ to one electrode side, and then cooled to room temperature. This is the device of Example 1. Separately, the element of Comparative Example 1 was prepared, and a voltage of +20 V was applied for 20 minutes at room temperature (crystal phase temperature).

[0044] <Current-voltage characteristic evaluation> The current-voltage characteristics were measured for each element. The current-voltage characteristics of Comparative Example 1 and Example 1 are shown in Figures 3A and 3B. The current-voltage characteristics of Comparative Example 1 and Comparative Example 2 are shown in Figures 4A and 4B. Note that the ranges of the graphs in Figures 3A and 3B are different, and the same is true for Figures 4A and 4B. As shown in Figure 3A, for example, when +5 V was applied to the electrode side where F4-TCNQ was concentrated in the device of Example 1, a current value at least one order of magnitude larger than that before the concentration (Comparative Example 1) was obtained. Furthermore, as shown in Figure 3B, the current-voltage characteristics became linear in the range of about +0.2 V or higher, indicating that ohmic contact or properties close to ohmic contact were achieved. Furthermore, as shown in Figure 3B, the device of Example 1 exhibited diode-like characteristics. 4A and 4B, the current-voltage characteristics of the element of Comparative Example 2 were similar to those of Comparative Example 1. These results revealed that the dopant material was swept into a liquid crystal phase or liquid phase having fluidity.

[0045] [Example 2, Comparative Example 3] A sample doped with 10,000 ppm of F4-TCNQ was melt-injected between the electrodes to form a crystalline film, forming a sandwich-structured element. This element is designated as Comparative Example 3. Next, +20 V was applied for 5 minutes while the element was kept at 170° C. to sweep the F4-TCNQ to one electrode side, and then the element was cooled to room temperature. The current-voltage characteristics of each device were measured, and the results are shown in Figures 5A to 5C. As shown in Figures 5A and 5B, a higher current value was obtained than in Example 1. Also, as shown in Figure 5C, the current-voltage characteristics are such that I is higher than V 2 It shows the characteristics of space charge limited current, and the mobility is 0.13 cm 2 / Vs. Therefore, it is considered that the device of Example 2 has achieved physical properties close to those of an ohmic contact.

[0046] [Example 3, Comparative Example 4] On a substrate having a gate electrode and a gate insulating film, Au electrodes were formed as source and drain electrodes by vacuum deposition. Next, a sample doped with 1000 ppm of F4-TCNQ was formed into a film by spin coating to fabricate a device. This is referred to as Comparative Example 4. Next, with the device at 150°C (liquid crystal phase temperature), +100V was applied between the source and drain electrodes for 5 minutes to sweep F4-TCNQ toward the source electrode, and then the device was cooled to room temperature. This is the device of Example 3.

[0047] <Transistor evaluation> Evaluation was carried out on the transistor elements of Example 3 and Comparative Example 4. Fig. 6 shows the gate voltage characteristics of the current value, Fig. 7 shows the current-voltage characteristics of Example 3, and Fig. 8 shows the current-voltage characteristics of Comparative Example 4. 6, the mobility of the device of Example 3, which was subjected to sweep concentration, was about twice as high as that of Comparative Example 4. This is thought to indicate that the contact resistance between the electrode and the organic semiconductor material was reduced.

[0048] As described above, the organic semiconductor material of this embodiment can achieve ohmic contact or a state close to it, which has been shown to enable the manufacture of semiconductor devices with excellent performance and reliability. [Explanation of symbols]

[0049] 10 Liquid crystalline organic compounds (A) 11 holes 20 Dopant material (B) 21 Anions 30 Interface 40 neighborhoods 42 areas 51 1st electrode 52 2nd electrode 100 Organic Semiconductor Materials

Claims

1. A liquid crystalline organic compound (A) and a dopant material (B) containing an electron donor material and / or an electron acceptor material, The liquid crystalline organic compound (A) forms a crystal film, the dopant material (B) has a spatial concentration distribution in the crystal film; Organic semiconductor materials.

2. The organic semiconductor material according to claim 1 , wherein the liquid crystalline organic compound (A) is represented by the following formula (I): Z １ -(Y １ -R １ ) ｎ …(I) In formula (I), Z １ is a group that forms a π-electron conjugated system containing an aromatic ring, Y １ each independently represents —O—, —S—, —Se—, —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCOO—, or a single bond, R １ each independently represents an alkyl group which may have a substituent, n is an integer from 1 to 8.

3. 2. The organic semiconductor material according to claim 1, wherein the concentration of the dopant material (B) is 1 ppm to 100,000 ppm.

4. The organic semiconductor material according to claim 1 , wherein the dopant material (B) is unevenly distributed at a portion of the interface.

5. The organic semiconductor material according to claim 4 , wherein an electrode is disposed on the part of the interface.

6. 6. The organic semiconductor material according to claim 5, wherein the current-voltage characteristic between the partial interface and the electrode is linear at least in the range of 0.5 V to 1.0 V.

7. A method for producing the organic semiconductor material according to any one of claims 1 to 6, comprising: forming a film containing a liquid crystalline organic compound (A) and a dopant material (B) including an electron donor material and / or an electron acceptor material; A part or all of the liquid crystalline organic compound (A) in the film is in a liquid crystal phase or a liquid phase, and the dopant material (B) is in an ionized state, applying an electric field to the film; The method for producing an organic semiconductor material includes converting the liquid crystalline organic compound (A) into a crystalline phase while maintaining an electric field, thereby generating a spatial concentration distribution of the dopant material (B) in the crystalline film.

8. A semiconductor device comprising the organic semiconductor material according to any one of claims 1 to 6.

9. A diode comprising the organic semiconductor material according to any one of claims 1 to 6 and a pair of electrodes.

10. A transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer, The organic semiconductor layer is the organic semiconductor material according to any one of claims 1 to 6, the dopant material (B) comprises an electron acceptor material; a source electrode disposed at the interface where the electron acceptor material is unevenly distributed.

11. A transistor comprising a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer, The organic semiconductor layer is the organic semiconductor material according to any one of claims 1 to 6, the dopant material (B) comprises an electron donor material; a drain electrode disposed at the interface where the electron donor material is unevenly distributed;

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