Resist composition and pattern forming method

JP2025185492APending Publication Date: 2025-12-22SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
JP2024093763
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-06-10
Publication Date
2025-12-22
Patent Text Reader

Abstract

To provide a non-chemically amplified resist composition that achieves excellent sensitivity and critical resolution in photolithography employing high-energy radiation, and a pattern forming method using the resist composition.SOLUTION: A resist composition contains a hypervalent iodine compound represented by the following formula (1), (2) or (3), a carboxyl group-containing compound, and a solvent.SELECTED DRAWING: None
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Citation Information

Patent Citations

  • Resist material and patterning process

    JP2018005224A

  • Organotin clusters, solutions of organotin clusters, and their application to high-resolution pattern formation

    JP2021503482A