Resist pattern forming method

JP2025185495APending Publication Date: 2025-12-22SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
JP2024093768
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2024-06-10
Publication Date
2025-12-22
Patent Text Reader

Abstract

To provide a resist pattern forming method including a step of forming a positive-type or negative-type resist pattern by developing, through dry etching, a resist film after exposure, using a non-chemically amplified resist composition.SOLUTION: A resist pattern forming method includes: (i) a step of forming a resist film using a resist composition containing a hypervalent iodine compound represented by the following formula (1), (2) or (3), a carboxyl group-containing compound, and a solvent; an exposure step; a heat treatment step; and a step of developing the heat-treated resist film by dry etching to form a resist pattern.SELECTED DRAWING: None
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Citation Information

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