Coherent de-excitation of crystalline motion modes of atomic objects for smooth transport in ion-trapped quantum computers

Abstract

Quantum computers, systems, devices, etc., and corresponding methods for de-exciting coherent motional modes of atomic object crystals confined by an atomic object confinement device. One or more voltage sources are controlled to apply a waveform to an array of electrodes of the atomic object confinement device. The application of the waveform to the array of electrodes causes each of one or more transport operations to be performed on a respective atomic object crystal, de-exciting at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations. A respective shim waveform configured to de-excite at least one coherent motional mode may be determined based on a parameterized shim waveform and a calibration process for determining parameters corresponding to the atomic object confinement device.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Application No. 63 / 266,923, filed January 19, 2022, the contents of which are incorporated by reference in their entirety herein.

[0002] Various embodiments relate to atomic objects confined by an atomic object confinement apparatus. For example, various embodiments relate to de-excitation of motional modes of an atomic object crystal confined by an atomic object confinement apparatus. For example, various embodiments relate to de-excitation of motional modes of an atomic object crystal of an atomic object trapping quantum computer. [Background technology]

[0003] A quantum charge-coupled device (QCCD) is a quantum computing architecture in which atomic objects are confined in an atomic object confinement device, and at least some of the atomic objects are used to perform quantum computations. The atomic objects may be transported between different locations of the atomic object confinement device. However, these transport operations cause the atomic objects to heat up. To cool the atomic objects to a desired level, cooling operations may be performed on the atomic objects. However, these cooling operations are slow compared to other operations performed by the quantum computer, and therefore represent a significant portion of the processing time of the quantum computer. Through applied effort, ingenuity, and innovation, many of the shortcomings of such conventional cooling systems have been overcome by developing solutions constructed according to embodiments of the present invention, many examples of which are described in detail herein. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] U.S. Patent Application No. 63 / 235,007 [Patent Document 2] U.S. Patent Application Serial No. 17 / 533,587 [Patent Document 3] U.S. Patent No. 11,037,776 Summary of the Invention [Means for solving the problem]

[0005] Exemplary embodiments provide quantum computers, systems, devices, etc., and corresponding methods for de-exciting coherent motional modes of an atomic object crystal confined by an atomic object confinement device. In various scenarios, the coherent motional modes of the atomic object crystal are excited during a transport operation. In various embodiments, the coherent motional modes are then de-excited by applying one or more shim waveforms to generate a potential gradient at the location of the atomic object crystal. The potential gradient exerts a force on the atomic object crystal that nullifies the motion of the excited coherent motional modes to reduce the motion due to the coherent motional modes. In various embodiments, the potential gradient evolves over time and / or oscillates over time with a frequency substantially equal to the respective motional modes such that the instantaneous force exerted on the atomic object crystal experiencing the potential gradient is substantially antiparallel and / or substantially equal and / or similar to the amplitude for the acceleration of the atomic object due to the respective motional modes. Thus, the kinetic energy of the atomic object crystal is reduced.

[0006] According to one aspect, a method is provided for calibrating parameters of a shim waveform for use by a particular atomic object confinement device in a de-excitation operation. In an exemplary embodiment, the method includes: causing the particular atomic object confinement device to perform a transfer operation on at least one atomic object crystal confined by the atomic object confinement device, capturing a first crystal spectrum for the atomic object crystal, identifying one or more sidebands in the first crystal spectrum, determining a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum, defining a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, the phase-parameterized shim waveform being a function of phase, and applying the phase-parameterized shim waveform to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capturing one or more second crystal spectra. The method further includes determining a phase within a phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra, defining a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and providing or storing the shim waveform for use when performing a quantum operation using the particular atomic object confinement device.

[0007] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0008] In an exemplary embodiment, the method further includes determining a plurality of phase-parameterized shim waveforms, where each of the plurality of phase-parameterized shim waveforms and a respective phase corresponding to a respective sideband of the one or more sidebands are determined based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0009] In an exemplary embodiment, the method further includes determining a multi-mode shim waveform based on the plurality of phase-parameterized shim waveforms and their respective phases.

[0010] In an exemplary embodiment, the shim waveform for a particular mode comprises a series of voltages to be applied to an array of electrodes of a particular atomic object confinement device to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0011] In an exemplary embodiment, the shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0012] In an exemplary embodiment, the shim waveform for a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0013] In an exemplary embodiment, capturing each of the first crystal spectrum and the second crystal spectrum includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0014] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are separated from the primary line by a respective frequency, each corresponding to a respective motion frequency.

[0015] According to another aspect, an apparatus is provided that is configured to de-excite and / or control a motion mode of an atomic object crystal confined by an atomic object confinement device. In an exemplary embodiment, the apparatus comprises at least one processor and a memory having computer-executable instructions stored therein. The computer-executable instructions, when executed by the at least one processor, are configured to: cause a particular atomic object confinement device to at least perform a transport operation for at least one atomic object crystal confined by the atomic object confinement device; capture a first crystal spectrum for the atomic object crystal; identify one or more sidebands in the first crystal spectrum; determine a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum; define a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, the phase-parameterized shim waveform being a function of phase; and cause the phase-parameterized shim waveform to be applied to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capture one or more second crystal spectra. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a phase within a phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra, define a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and provide or store the shim waveform for use when performing a quantum operation using the particular atomic object confinement apparatus.

[0016] In an exemplary embodiment, the device is a controller for a quantum computer.

[0017] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a plurality of phase-parameterized shim waveforms, where each of the plurality of phase-parameterized shim waveforms and a respective phase corresponding to a respective sideband of the one or more sidebands are determined based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0018] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a multi-mode shim waveform based on the plurality of phase parameterized shim waveforms and their respective phases.

[0019] In an exemplary embodiment, a particular mode shim waveform comprises a series of voltages to be applied in an array to electrodes of a particular atomic object confinement device in order to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0020] In an exemplary embodiment, the shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0021] In an exemplary embodiment, the shim waveform for a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0022] In an exemplary embodiment, capturing each of the first crystal spectrum and the second crystal spectrum includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0023] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are separated from the primary line by a respective frequency that corresponds to a respective motion frequency.

[0024] According to yet another aspect, a system is provided. In an exemplary embodiment, the system comprises an atomic object confinement device configured to confine one or more atomic object crystals therein, and a controller. The controller comprises at least one processor and a memory having computer-executable instructions stored therein, which, when executed by the at least one processor, are configured to cause the controller to at least perform a transport operation on at least one atomic object crystal confined by the atomic object confinement device to a particular atomic object confinement device, capture a first crystal spectrum for the atomic object crystal, identify one or more sidebands in the first crystal spectrum, determine a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum, define a phase-parameterized shim waveform based on the respective motion frequency and the respective motion amplitude, the phase-parameterized shim waveform being a function of phase, and cause the phase-parameterized shim waveform to be applied to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented over a phase range, and capture one or more second crystal spectra. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a phase within a phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra, define a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase, and provide or store the shim waveform for use when performing a quantum operation using the particular atomic object confinement apparatus.

[0025] In an exemplary embodiment, the system is a QCCD quantum computer.

[0026] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a plurality of phase-parameterized shim waveforms, each of the plurality of phase-parameterized shim waveforms corresponding to a respective sideband and a respective phase of the one or more sidebands, determined at least in part based on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

[0027] In an exemplary embodiment, the computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a multi-mode shim waveform based on the plurality of phase parameterized shim waveforms and their respective phases.

[0028] In an exemplary embodiment, the shim waveform for a particular mode comprises a series of voltages to be applied to an array of electrodes of a particular atomic object confinement device in order to reduce the kinetic energy of each particular mode of the atomic object crystal.

[0029] In an exemplary embodiment, the shim waveform of a particular mode is configured such that, when the shim waveform of the particular mode is applied to the array of electrodes, it induces a gradient in the electric potential at a first location of the particular atomic object confinement device and does not induce a gradient in the electric field at one or more second locations of the particular atomic object confinement device, and the atomic object crystal is located at the first location and not at any of the one or more second locations.

[0030] In an exemplary embodiment, the shim waveform for a particular mode is associated with or parameterized by an axial frequency corresponding to at least one of (a) a transport operation or (b) a potential well at a first location of a particular atomic object confinement device, and the atomic object crystal is located at the first location.

[0031] In an exemplary embodiment, capturing each of the first crystal spectrum and the second crystal spectrum includes probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal, and detecting light emitted by the atomic object crystal in response to incidence of the laser beam on the atomic object crystal.

[0032] In an exemplary embodiment, each of the first crystal spectrum and the second crystal spectrum includes a primary line at the probe frequency, and one or more sidebands are separated from the primary line by a respective frequency that corresponds to a respective motion frequency.

[0033] According to another aspect, a method is provided for using coherent mode de-excitation during a transport operation of an atomic object crystal confined by an atomic object confinement device. In an exemplary embodiment, the method includes identifying one or more transport operations to be performed at least partially in parallel. Each transport operation of the one or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location, the starting location and the destination location being locations within the atomic object confinement device. The method further includes determining a respective shim waveform for at least one of the one or more transport operations, determining a respective carrier waveform for each transport operation, determining an applied waveform based on an aggregation of the respective shim waveform and the respective carrier waveform, and controlling one or more voltage sources to apply a waveform voltage signal according to the applied waveform to electrodes of an array of electrodes of the atomic object confinement device. The application of the applied waveform to the array of electrodes causes each of the one or more transport operations to be performed on the respective atomic object crystal and de-excites at least one coherent motional mode of the respective atomic object crystal corresponding to at least one of the one or more transport operations.

[0034] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0035] In an exemplary embodiment, each shim waveform is an aggregation of two or more particular mode shim waveforms, each of the two or more particular mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0036] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first particular mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second particular mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, where the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and where the first motional frequency and the second motional frequency are different.

[0037] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretch mode.

[0038] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to cause one or more transport operations to be performed and to induce a gradient in the electric potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0039] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location of at least one of the one or more transport operations to a respective destination location.

[0040] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential collocated with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential collocated with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0041] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0042] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0043] In an exemplary embodiment, the shim waveforms for each particular mode are each associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at a particular atomic object confinement device location in which the respective atomic object crystal is located.

[0044] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

[0045] According to another aspect, an apparatus is provided that is configured to cause and / or control de-excitation of a motion mode of an atomic object crystal confined by an atomic object confinement device. In an exemplary embodiment, the apparatus comprises at least one processor and a memory that stores computer-executable instructions. The computer-executable instructions, when executed by the at least one processor, are configured to at least cause the apparatus to identify one or more transport operations to be performed at least partially in parallel. Each transport operation of the one or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location, the starting location and the destination location being locations within the atomic object confinement device. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the apparatus to at least determine a respective shim waveform for at least one of the one or more transport operations, determine a respective carrier waveform for each transport operation, determine an applied waveform based on an aggregation of the respective shim waveform and the respective carrier waveform, and control one or more voltage sources to apply a waveform voltage signal according to the applied waveform to an electrode of an array of electrodes of the atomic object confinement device. Application of the applied waveform to the array of electrodes causes each of one or more transport operations to be performed on each atomic object crystal, de-exciting at least one coherent motional mode of each atomic object crystal corresponding to at least one of the one or more transport operations.

[0046] In an exemplary embodiment, the device is a controller for a quantum computer.

[0047] In an exemplary embodiment, each shim waveform is an aggregation of two or more particular mode shim waveforms, each of the two or more particular mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0048] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first particular mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second particular mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, where the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and where the first motional frequency and the second motional frequency are different.

[0049] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretch mode.

[0050] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to cause one or more transport operations to be performed and to induce a gradient in the electric potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0051] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location of at least one of the one or more transport operations to a respective destination location.

[0052] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential collocated with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential collocated with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0053] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0054] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0055] In an exemplary embodiment, the shim waveforms for each particular mode are associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at the location of the particular atomic object confinement device in which the respective atomic object crystal is located.

[0056] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motion mode frequency, a respective motion mode amplitude, and a respective phase.

[0057] According to yet another aspect, a system is provided. In an exemplary embodiment, the system comprises an atomic object confinement device configured to confine one or more atomic object crystals therein and a controller. The controller comprises at least one processor and a memory having computer-executable instructions stored therein, the computer-executable instructions being configured, when executed by the at least one processor, to cause the controller to at least identify one or more transport operations to be performed at least partially in parallel. Each transport operation of the one or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location, the starting location and the destination location being locations within the atomic object confinement device. The computer-executable instructions, when executed by the at least one processor, are further configured to cause the controller to at least determine a respective shim waveform for at least one of the one or more transport operations, determine a respective carrier waveform for each transport operation, determine an applied waveform based on an aggregation of the respective shim waveform and the respective carrier waveform, and control one or more voltage sources to apply a waveform voltage signal according to the applied waveform to an electrode of an array of electrodes of the atomic object confinement device. Application of the applied waveform to the array of electrodes causes each of one or more transport operations to be performed on each atomic object crystal, de-exciting at least one coherent motional mode of each atomic object crystal corresponding to at least one of the one or more transport operations.

[0058] In an exemplary embodiment, the system is a QCCD quantum computer.

[0059] In an exemplary embodiment, each shim waveform is an aggregation of two or more particular mode shim waveforms, each of the two or more particular mode shim waveforms corresponding to a different coherent mode of motion of a respective atomic object crystal.

[0060] In an exemplary embodiment, each shim waveform is an aggregation of at least (a) a first particular mode shim waveform corresponding to a first coherent motional mode of the respective atomic object crystal and (b) a second particular mode shim waveform corresponding to a second coherent motional mode of the respective atomic object crystal, where the first coherent motional mode is characterized by a first motional frequency and the second coherent motional mode is characterized by a second motional frequency, and where the first motional frequency and the second motional frequency are different.

[0061] In an exemplary embodiment, the first coherent motion mode is a center-of-mass mode and the second coherent motion mode is a stretch mode.

[0062] In an exemplary embodiment, the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to cause one or more transport operations to be performed and to induce a gradient in the electric potential at a first location of the atomic object confinement device, where each atomic object crystal is located within a particular atomic object confinement device, corresponding to at least one transport operation.

[0063] In an exemplary embodiment, the first location follows the atomic object crystal from a respective starting location of at least one of the one or more transport operations to a respective destination location.

[0064] In an exemplary embodiment, at least one of the one or more transport operations includes at least a first transport operation and a second transport operation, where the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location, and the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location, and the applied waveforms include (a) at least one shim waveform of a specific mode configured to induce a first gradient in a potential collocated with the first potential well as the first potential well moves from the first starting location to the first destination location, and (b) at least one shim waveform of a specific mode configured to induce a second gradient in a potential collocated with the second potential well as the second potential well moves from the second starting location to the second destination location.

[0065] In an exemplary embodiment, the first gradient is substantially zero at the location of the second atomic object crystal, and the second gradient is substantially zero at the location of the first atomic object crystal.

[0066] In an exemplary embodiment, the first potential well defines a first axial frequency and the second potential well defines a second axial frequency, the first axial frequency and the second axial frequency being spaced apart by 0.05 to 5 MHz.

[0067] In an exemplary embodiment, the shim waveforms for each particular mode are associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) a transport operation or (b) a potential well at the location of the particular atomic object confinement device in which the respective atomic object crystal is located.

[0068] In an exemplary embodiment, the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

[0069] According to another aspect, a method is provided for reducing parasitic cross-talk between de-excitation operations performed at least partially in parallel at different locations within an atomic object confinement device. In an exemplary embodiment, the method includes the steps of determining a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device, assigning a first axial frequency to a first potential well located at the first location and assigning a second axial frequency to a second potential well located at the second location, where the first axial frequency and the second axial frequency are separated from each other by 0.05 to 5 MHz; The method includes determining a first shim waveform corresponding to an axial frequency and a second shim waveform corresponding to a second axial frequency, and controlling one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at the first location based on the first shim waveform, and a second de-excitation operation to be performed at the second location based on the second shim waveform.

[0070] In an exemplary embodiment, the method is performed by a controller of a quantum computer.

[0071] According to another aspect, an apparatus is provided that is configured to cause and / or control de-excitation of a motional mode of an atomic object crystal confined by an atomic object confinement device. In an exemplary embodiment, the apparatus comprises at least one processor and a memory having computer-executable instructions stored therein. The computer-executable instructions, when executed by the at least one processor, cause the apparatus to at least determine a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device, assign a first axial frequency to a first potential well located at the first location and assign a second axial frequency to a second potential well located at the second location, wherein the first axial frequency and the second axial frequency are spaced apart from each other by 0.05 to 5 MHz. determining a first shim waveform corresponding to the first axial frequency and a second shim waveform corresponding to the second axial frequency; and controlling one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at the first location based on the first shim waveform, and a second de-excitation operation to be performed at the second location based on the second shim waveform.

[0072] In an exemplary embodiment, the device is a controller for a quantum computer.

[0073] According to yet another aspect, a system is provided. In an exemplary embodiment, the system includes an atomic object confinement device configured to confine one or more atomic object crystals therein and a controller. The controller includes at least one processor and a memory having computer-executable instructions stored therein that, when executed by the at least one processor, cause the controller to at least determine a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device, assign a first axial frequency to a first potential well located at the first location and assign a second axial frequency to a second potential well located at the second location, wherein the first axial frequency and the second axial frequency are determined by the first axial frequency and the second axial frequency. are spaced from one another by 0.05 to 5 MHz; determining a first shim waveform corresponding to the first axial frequency and a second shim waveform corresponding to the second axial frequency; and controlling one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause a first potential well to be characterized by the first axial frequency, a second potential well to be characterized by the second axial frequency, a first de-excitation operation to be performed at the first location based on the first shim waveform, and a second de-excitation operation to be performed at the second location based on the second shim waveform.

[0074] In an exemplary embodiment, the system is a QCCD quantum computer.

[0075] Having thus generally described the invention, reference is now made to the accompanying drawings, which are not necessarily drawn to scale. [Brief description of the drawings]

[0076] [Figure 1] FIG. 1 is a block diagram of an exemplary atomic object quantum computer, in accordance with an exemplary embodiment. [Diagram 2] FIG. 2 is a block diagram illustrating two atomic object crystals within a portion of an atomic object confinement device in accordance with an illustrative embodiment. [Diagram 3] 1 is a schematic diagram illustrating an atomic object crystal oscillating in a coherent center-of-mass motion mode and the forces imparted within the atomic object crystal as a result of application of a shim waveform of a corresponding particular mode, according to an illustrative embodiment. [Figure 4] 5 is a flowchart illustrating various processes, procedures, and / or operations for performing shim waveform calibration in accordance with an exemplary embodiment. [Diagram 5] 1 is a flowchart illustrating various processes, procedures, and / or operations of applying a shim waveform implementation of quantum computing in accordance with example embodiments. [Figure 6] 11 is a flowchart illustrating various processes, procedures, and / or operations for reducing parasitic crosstalk between de-excitation signals simultaneously applied to multiple areas of an atomic object confinement device, according to example embodiments. [Figure 7] FIG. 1 is a schematic diagram of an example controller of a quantum computer comprising an atomic object confinement device configured to confine an atomic object therein, in accordance with an example embodiment. [Figure 8] FIG. 1 is a schematic diagram of an example computing entity of a quantum computer system that may be used in accordance with example embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0077] The present invention will be described more fully below with reference to the accompanying drawings, in which some, but not all, of the embodiments of the invention are shown. Indeed, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will satisfy applicable legal requirements. The term "or" (also indicated as "or" or " / ") is used herein in both alternative and connective senses unless otherwise indicated. The terms "illustrative" and "exemplary" are used as examples without an indication of a quality level. The terms "generally" and "about" refer to within applicable engineering and / or manufacturing tolerances and / or user measurement capabilities, unless otherwise indicated. Like numbers refer to like elements throughout.

[0078] In various scenarios, the atomic object is trapped in an atomic object containment device. In various embodiments, the atomic object containment device is an ion trap, such as a surface ion trap, a Paul ion trap, etc. In various embodiments, the atomic object is an ion, an atom, an ion molecule, or a neutral molecule, etc. In various embodiments, the atomic object trapped by the atomic object containment device is made into an atomic object crystal. For example, the atomic object crystal includes two or more atomic objects. In an exemplary embodiment, the atomic object crystal includes four atomic objects. In an exemplary embodiment, a first component of the atomic object crystal is a cooling ion for use in a sympathetic cooling scheme for atomic object crystals. In an exemplary embodiment, a second component of the atomic object crystal is a qubit ion for use as a qubit in a quantum computer. In various embodiments, the first component of the atomic object crystal and the second component of the atomic object crystal may be of the same atomic type or of different atomic types, depending on the application. As used herein, the atomic type of a component of an atomic object and / or atomic object crystal refers to the type of the chemical element, atomic number, atomic / ionic species, etc. of the component of the atomic object and / or atomic object crystal. In an exemplary embodiment, the atomic object crystal includes two first components (e.g., two ions of a first atomic type) and two second components (e.g., two ions of a second atomic type).

[0079] In various embodiments, atomic objects confined within an atomic object confinement device are used to perform experiments, controlled quantum state evolution, quantum computations, etc. In various embodiments, in order for atomic objects confined within an atomic object confinement device to be used to perform experiments, controlled quantum state evolution, quantum computations, etc., the atomic objects need to be cryogenically cooled and / or near a motional ground state for the atomic objects and / or their components. For example, the motional states of atomic objects and / or atomic object crystals need to be de-excited such that the atomic objects are in their motional ground states so that the atomic objects (e.g., qubit ions) may be used to perform experiments, controlled quantum state evolution, quantum computations, etc.

[0080] In various scenarios, during the performance of an experiment, a controlled quantum state evolution, a quantum computation, or the like, atomic objects and / or atomic object crystals may be transported from their respective starting locations within the atomic object confinement device to their respective destination locations within the atomic object confinement device. During such transport operations, the atomic objects and / or atomic object crystals are excited such that they are no longer in their kinetic ground state. Conventionally, laser cooling is used to reduce the kinetic energy of the atomic objects and / or their components. However, laser cooling is a slow process compared to various other processes performed during the performance of an experiment, a controlled quantum state evolution, a quantum computation, or the like. For example, the time required to perform the transport and cooling operations is conventionally considered a limiting factor in the computational speed of a QCCD quantum computer. Moreover, the significant amount of time required to cool the atomic object crystal after performing the transport operation limits the depth of the quantum circuit and / or quantum program that can be implemented by a QCCD quantum computer and may contribute to memory errors. Thus, a technical challenge exists as to how to quickly and efficiently reduce the kinetic energy of the atomic object crystal and de-excite the kinetic state of the atomic object crystal.

[0081] An atomic object crystal including two atomic objects (e.g., a coolant ion and a qubit ion) may oscillate in a center-of-mass mode, in which the two atomic objects oscillate in a manner in which the distance between the two atomic objects remains substantially constant, such that the center-of-mass (COM) of the atomic object crystal oscillates. An atomic object crystal including two atomic objects may also oscillate in a stretching mode, in which the distance between the two atomic objects periodically stretches and contracts. In addition, the atomic object crystal may oscillate in a superposition of a COM mode and / or a stretching mode, which may have different motion frequencies, motion amplitudes, and / or phases. For example, the atomic object crystal may oscillate in a superposition of a COM mode characterized by a COM frequency and a stretching mode characterized by a stretching frequency, such that the motion of the atomic object crystal includes a component characterized by a COM frequency and a component characterized by a stretching frequency. Additional motion modes and their superpositions are also possible, particularly when the charge-to-mass ratios of the components of the atomic object crystal are different. De-excitation of these superpositions of motion modes thus presents a technical challenge.

[0082] An additional technical challenge is presented when the atomic object crystal to be de-excited is one of multiple atomic object crystals confined by an atomic object confinement device. In such a scenario, it is desired to de-excite the particular atomic object crystal without simultaneously exciting any of the other atomic object crystals that are also confined by the atomic object confinement device. It may also be desired to perform two or more de-excitation operations at least partially in parallel (e.g., semi-concurrently and / or where the performance of the de-excitation operations at least partially overlaps in time). Thus, a technical challenge exists as to how to localize the effect of the de-excitation operations.

[0083] Various embodiments provide technical solutions to these and other technical challenges related to de-excitation of coherent motional modes of an atomic object crystal confined by an atomic object confinement device. For example, various embodiments provide mode-specific and / or multi-mode shim waveforms. The shim waveform includes a series of voltages. The series of voltages includes respective voltages to be applied to each electrode and / or a subset of electrodes of an electrode array of the atomic object confinement device at a plurality of time steps. When the respective voltages of the series of voltages are applied to the electrode array of the atomic object confinement device in a time-ordered sequence specified by the series of voltages, a potential gradient that evolves over time is formed at a location of the atomic object crystal to be de-excited. The potential gradient is configured to impart a force to the atomic object crystal (and / or components thereof) that counteracts an oscillatory motion of the atomic object crystal (and / or components thereof).

[0084] In various embodiments, the mode-specific and / or multi-mode shim waveforms are configured to localize the resulting potential gradient at a specific location within the atomic object confinement device. For example, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient is localized at the location of the target atomic object crystal without affecting other nearby atomic object crystals and / or other atomic object crystals within the atomic object confinement device. In various embodiments, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient may be non-constant such that a de-excitation operation may be performed on the atomic object crystal at least partially in parallel (e.g., semi-concurrently and / or where the performance of the operations overlaps at least partially in time) with the performance of a transport operation on the atomic object crystal. For example, a de-excitation operation may be performed on the atomic object crystal while the atomic object crystal is being transported to further reduce the time required to perform transport and cooling of the atomic object crystal.

[0085] Moreover, various embodiments provide multi-mode shim waveforms configured to simultaneously cause de-excitation of multiple motional modes. For example, the multi-mode shim waveforms may be configured such that the resulting potential gradient and its time evolution simultaneously de-excites the COM mode, the stretching mode, and / or other motional modes. In various embodiments, the atomic objects and / or crystals of atomic objects are de-excited via application of shim waveforms to respective electrodes of the confinement device during and / or after a transport operation, such as a linear transport (e.g., transported along a linear confinement region or a leg of the confinement device), a split operation (e.g., when two or more atomic objects or atomic object crystals are separated from each other such that the atomic objects or atomic object crystals are initially disposed in one potential well and, at the end of the split operation, the atomic objects or atomic object crystals are disposed in separate potential wells). As will be apparent to one skilled in the art based on the following description of the various embodiments, various other technical advantages and improvements are provided by the various embodiments.

[0086] Exemplary Quantum Computer System The de-excitation of the motional modes of atomic objects and / or atomic object crystals confined by the atomic object confinement device may be implemented in a wide variety of contexts and / or for a wide variety of applications. One exemplary context is quantum charge-coupled device (QCCD)-based quantum computing. FIG. 1 provides a block diagram of an exemplary quantum computer system 100. In various embodiments, the quantum computer system 100 comprises a computing entity 10 and a quantum computer 110.

[0087] In various embodiments, the quantum computer 110 comprises a controller 30, a cryogenic and / or vacuum chamber 40 enclosing an atomic object confinement device 50 thereby confining atomic objects, and one or more manipulation sources 64 (e.g., 64A, 64B, 64C). In exemplary embodiments, the one or more manipulation sources 64 may include one or more lasers (e.g., optical lasers, microwave sources, and / or masers, etc.) or another manipulation source. In various embodiments, the one or more manipulation sources 64 are configured to manipulate and / or cause a controlled quantum state evolution of one or more atomic objects in the device 50. For example, the first manipulation source 64A is configured to generate and / or provide a first manipulation signal and the second manipulation source 64B is configured to generate and / or provide a second manipulation signal, the first manipulation signal and the second manipulation signal are configured to collectively laser-cool the atomic objects confined by the atomic object confinement device, perform a quantum logic gate on the one or more atomic objects, perform a read operation on the one or more atomic objects, etc.

[0088] In various embodiments, the atomic object confinement device 50 is an ion trap, such as a surface ion trap, a Paul ion trap, etc. In various embodiments, the atomic objects are ions, atoms, neutral and / or ionic molecules, etc.

[0089] In various embodiments, the atomic objects trapped by the atomic object trapping device are made into atomic object crystals. For example, the atomic object crystal includes two or more atomic objects. In an exemplary embodiment, a first component of the atomic object crystal is a coolant ion for use in a cooperative cooling scheme for atomic object crystals. In an exemplary embodiment, a second component of the atomic object crystal is a qubit ion for use as a qubit in a quantum computer. In various embodiments, the first component of the atomic object crystal and the second component of the atomic object crystal may be of the same atomic type or different atomic types, depending on the application. As used herein, the atomic type of the atomic object and / or component of the atomic object crystal refers to the type of chemical element, atomic number, atomic / ionic species, etc., of the atomic object and / or component of the atomic object crystal. For example, in an exemplary embodiment, the atomic object crystal includes two atomic objects having different charge-to-mass ratios.

[0090] In an exemplary embodiment, one or more manipulation sources 64 each provide a manipulation signal (e.g., a laser beam, etc.) to one or more regions of atomic object confinement device 50 via a corresponding beam path 66 (e.g., 66A, 66B, 66C). In various embodiments, at least one beam path 66 comprises a modulator configured to modulate the manipulation signal being provided to device 50 via beam path 66. In various embodiments, manipulation source 64, the modulator, and / or other components of quantum computer 110 are controlled by controller 30.

[0091] In various embodiments, the quantum computer 110 comprises one or more magnetic field generators 70 (e.g., 70A, 70B). For example, the magnetic field generators may be internal magnetic field generators 70A disposed within the cryogenic and / or vacuum chamber 40 and / or external magnetic field generators 70B disposed outside the cryogenic and / or vacuum chamber 40. In various embodiments, the magnetic field generators 70 are permanent magnets, Helmholtz coils, electromagnets, etc. In various embodiments, the magnetic field generators 70 are configured to generate a magnetic field in one or more regions of the atomic object confinement device 50 having a particular magnitude and a particular field direction in one or more regions of the atomic object confinement device 50.

[0092] In various embodiments, the quantum computer 110 comprises a voltage source 80 configured to provide electrical signals to the electrodes of the electrode array of the atomic object confinement device and / or to the radio frequency (RF) rails and / or electrodes of the atomic object confinement device. For example, the voltage source 80 may comprise arbitrary wave generators (AWGs), digital-to-analog converters (DACs), etc. configured to generate and provide various electrical signals. In an exemplary embodiment, the voltage source 80 is electrically coupled to corresponding potential generating elements (e.g., electrodes of the electrode array, RF rails) of the atomic object confinement device 50. For example, the voltage source 80 is configured to provide periodic voltage signals to the RF rails and to provide waveform voltage signals according to one or more carrier waveforms and / or shim waveforms to the electrodes of the electrode array of the atomic object confinement device. In various embodiments, the voltage source 80 is controlled by respective driver controller elements of the controller 30.

[0093] In various embodiments, quantum computer 110 comprises a light collection system 90 configured to collect and / or detect photons generated and / or scattered by atomic objects confined by atomic object confinement device 50. Light collection system 90 may comprise one or more optical elements (e.g., lenses, mirrors, waveguides, fiber optic cables, etc.) and one or more photodetectors. In various embodiments, the photodetectors may be photodiodes, photomultipliers, charge-coupled device (CCD) sensors, complementary metal oxide semiconductor (CMOS) sensors, micro-electro-mechanical systems (MEMS) sensors, and / or other photodetectors sensitive to light and / or light frequencies of quantum computer 110. In various embodiments, the detectors may be in electronic communication with quantum system controller 30, such as via one or more A / D converters 725 (see FIG. 7 ).

[0094] In various embodiments, controller 30 is configured to control voltage source 80, electrical signal source, and / or drivers that control atomic object confinement device 50 and / or transport of atomic objects within atomic object confinement device 50, cryogenic system and / or vacuum system that control the temperature and pressure within cryogenic and / or vacuum chamber 40, manipulation source 64, magnetic field generator 70, and / or other systems configured to control environmental conditions (e.g., temperature, humidity, pressure, etc.) within cryogenic and / or vacuum chamber 40 and / or manipulate and / or cause a controlled quantum state evolution of one or more atomic objects within atomic object confinement device 50.

[0095] In various embodiments, computing entity 10 is configured to allow a user to provide input to quantum computer 110 (e.g., via a user interface of computing entity 10) and receive, view, etc., output from quantum computer 110. Computing entity 10 may be in communication with a controller 30 of quantum computer 110 via one or more wired or wireless networks 20 and / or via direct wired and / or wireless communication. In exemplary embodiments, computing entity 10 is capable of converting, configuring, formatting, etc., information / data, quantum computing algorithms, quantum circuits, etc., into a computing language, executable instructions, command set, etc. that controller 30 can understand and / or implement.

[0096] Exemplary Atomic Object Confinement Apparatus FIG. 2 shows a first atomic object crystal 220A and a second atomic object crystal 220B trapped in a portion 200 of the atomic object containment device 50. In the illustrated embodiment, the first atomic object crystal 220A and the second atomic object crystal 220B each comprise a respective first component 222 that is of a first atomic type and a second component 224 that is of a second atomic type. In various embodiments, the first atomic type and the second atomic type are different. For example, the first component 222 of the atomic object crystal 220 may have a different charge-to-mass ratio than the second component 224 of the atomic object crystal 220. In an illustrative embodiment, the first component 222 is an ion of a first type and the second component 224 is an ion of a second, different type.

[0097] In various embodiments, the atomic object confinement device 50 may be an atomic object confinement device described in U.S. patent application Ser. No. 63 / 235,007, filed August 19, 2021, U.S. patent application Ser. No. 17 / 533,587, filed November 23, 2021, and / or U.S. Patent No. 11,037,776, issued June 15, 2021, the contents of which are incorporated by reference herein in their entireties.

[0098] 2 provides a top schematic view of a portion 200 of an exemplary atomic object confinement device 50. The exemplary atomic object confinement device 50 may be a one-dimensional atomic object confinement device, a two-dimensional atomic object confinement device, an atomic object confinement device comprising a two-dimensional (possibly periodic) array of one-dimensional trapping segments, etc. In an exemplary embodiment, the atomic object confinement device 50 is a multi-dimensional (e.g., two- or three-dimensional) surface ion trap, surface Paul trap, etc. configured to trap a plurality of atomic objects (e.g., ions, atoms, neutral and / or ionic molecules, etc.) and / or atomic object crystals therein.

[0099] In an exemplary embodiment, atomic object confinement device 50 is fabricated as part of an atomic object confinement device chip and / or as part of an atomic object confinement device package. For example, atomic object confinement device 50 may be formed on a chip with multiple wire and / or wiring attachment points such that multiple voltage signals (e.g., periodic voltage signals, waveform voltage signals) may be provided and / or applied to RF rail 210 and electrodes 204 of the array of electrodes, respectively.

[0100] In an exemplary embodiment, the atomic object confinement device 50 is at least partially defined by several radio frequency (RF) rails 210 (e.g., 210A, 210B). In various embodiments, the atomic object confinement device 50 is at least partially defined by several sequences of electrodes 202 (e.g., 202A, 202B, 202C). For example, the sequences of electrodes 202 form an array of electrodes 204. In various embodiments, various geometries, arrangements, layouts, etc. of the electrodes 204 may be used. The illustrated geometries, arrangements, layouts, etc. of the electrodes 204 are provided for illustration purposes and, in various embodiments, will be determined and / or configured based on the intended application of the atomic object confinement device 50. In various embodiments, the top surface of the atomic object confinement device 50 has a planarized topology. For example, the top surface of each RF rail 210 of the several RF rails and the top surface of each electrode 204 of the several sequences of electrodes 202 may be substantially coplanar. In an exemplary embodiment, the surface of atomic object confinement device 50 is not planar, but defines a plane from which the height of atomic objects above the "surface" of atomic object confinement device 50 is measured.

[0101] In various embodiments, two adjacent and / or substantially parallel RF rails 210 may be separated (e.g., insulated) from one another by a vertical gap 215. For example, the vertical gap 215 may define (in one or two dimensions) a confinement channel or confinement region of the atomic object confinement device 50 in which one or more atomic objects and / or atomic object crystals 220 may be confined and / or trapped at various locations within the atomic object confinement device 50. In various embodiments, the vertical gap 215 defined thereby may extend substantially parallel to the adjacent RF rails 210 along the length of the corresponding portion and / or leg. In an exemplary embodiment, the vertical gap 215 may be at least partially filled with an insulating material (e.g., a dielectric material). In various embodiments, the dielectric material may be silicon dioxide (e.g., formed via thermal oxidation) and / or other dielectric and / or insulating material. In various embodiments, the vertical gap has a width (e.g., distance between adjacent RF rails 210) of about 40 μm to 500 μm. In various embodiments, one or more sequences of electrodes 202B are disposed and / or formed within the longitudinal gap 215.

[0102] In various embodiments, the atomic object confinement device 50 (and / or its legs and / or junctions) may be at least partially defined by several sequences 202 of electrodes, each including a plurality of electrodes 204. In exemplary embodiments, each sequence 202 of electrodes associated with and / or at least partially defining a leg is formed to extend substantially parallel to one or more RF rails 210 that at least partially define the respective leg along at least a portion of the leg's length. For example, three sequences 202A, 202B, 202C of electrodes at least partially define the portion 200 of the atomic object confinement device 50 illustrated in FIG. 2. Each of the three sequences 202 of electrodes includes a plurality of electrodes 204. In various embodiments, the several sequences 202 of electrodes that at least partially define each leg include two, three, four, and / or another number of sequences of electrodes. In an exemplary embodiment, atomic object confinement device 50 comprises a plurality of sequences 202 of electrodes, each of the several sequences of electrodes at least partially defining legs and / or joints of atomic object confinement device 50. In some embodiments, each of electrodes 204 is formed on a substantially coplanar upper surface that is substantially coplanar with an upper surface of RF rail 210.

[0103] In an exemplary embodiment, a lateral gap may exist between neighboring and / or adjacent electrodes 204. In an exemplary embodiment, the lateral gap may be an empty section and / or may be at least partially filled with a dielectric material to prevent electrical communication between the neighboring and / or adjacent electrodes 204. In an exemplary embodiment, the lateral gap between neighboring and / or adjacent electrodes 204 may be in the range of about 1-10 μm.

[0104] In an exemplary embodiment, a vertical gap exists between the sequence of electrodes 202 and a nearby and / or adjacent RF rail 210. In an exemplary embodiment, the vertical gap may be at least partially filled with a dielectric and / or insulating material to prevent electrical communication between the electrodes 204 of the sequence of electrodes 202 and the RF rail 210. In an exemplary embodiment, the vertical gap between the electrodes 204 and the nearby and / or adjacent RF rail 210 may be in the range of about 1-10 μm.

[0105] In an exemplary embodiment, several (e.g., pairs) of RF rails 210 may be formed between the first sequence of electrodes 202A and the third sequence of electrodes 202C, with the second sequence of TT electrodes 202B extending along the longitudinal channel between the RF rails 210. For example, each sequence of electrodes 202 of a particular leg may extend in a substantially parallel direction to the corresponding RF rail 210 along at least a portion of the length of the particular leg. In various embodiments, the top surface of the electrodes 204 is substantially coplanar with the top surface of the RF rails 210.

[0106] In various embodiments, a periodic voltage signal (e.g., a voltage signal having a radio frequency periodicity) may be applied to the RF rail 210 to generate electric and / or magnetic fields that act to maintain atomic objects confined and / or trapped within the atomic object confinement device 50. For example, the RF rail 210, which at least partially defines a particular leg, generates an electric pseudopotential that confines and / or traps atomic objects within the particular leg transversely relative to a corresponding one-dimensional segment and / or portion of the atomic object confinement device 50. For example, the RF rail 210, when a periodic voltage signal is applied thereto, is configured to generate a pseudopotential that confines and / or traps atomic objects along a one-dimensional segment, illustrated in FIG. 2 by dashed line 212, which represents a local pseudopotential null. For example, the radio frequency null along the leg defines a transport path (e.g., transport path 232) along the leg along which the atomic objects and / or atomic object crystals 220 may be transported along at least a portion of the length of the leg.

[0107] In various embodiments, the electrodes 204 of the array of electrodes (e.g., formed by several sequences of electrodes 202) are configured to have waveform voltage signals applied to them such that the electrodes 204 generate a time-dependent electric potential field that causes the atomic objects and / or atomic object crystals to be transported along a transport path (e.g., along an RF null) to a corresponding portion of the atomic object confinement device 50. For example, the electric and / or magnetic fields generated at least in part by the waveform voltage signals applied to the electrodes 204 may trap at least one atomic object and / or atomic object crystal in a potential well above the top surface of the second sequence 202B of electrodes and / or the vertical gap 215 of a respective leg and / or portion of the atomic object confinement device 50. Additionally, the waveform voltage signal applied to electrodes 204 may cause atomic objects confined and / or trapped within the second sequence of electrodes 202B and / or the potential well above the top surface of the vertical gap 215 to travel on a trajectory and / or transport path that substantially follows and / or follows an RF null for the corresponding atomic object confinement device and / or portion of the atomic object confinement device.

[0108] In various embodiments, the waveform voltage signals applied to the electrodes 204 and the periodic voltage signals applied to the RF rails 210 are controlled by one or more connected devices (such as, for example, the controller 30 shown in FIG. 7) via electrical leads. For example, the controller 30 may control the voltage sources 80 and / or other voltage drivers to cause the voltage sources 80 and / or drivers to apply waveform voltage signals to the electrodes 204 to generate time-dependent potentials (e.g., potentials that evolve over time) that cause atomic objects trapped and / or confined by the atomic object confinement device 50 to be transported along a defined transport path and / or held in a defined position and / or undergo a de-excitation operation.

[0109] Depending on factors such as the charge on the atomic object of the at least one atomic object and / or atomic object crystal, and / or the shape and / or magnitude of the combined electric and / or magnetic field (e.g., generated via application of periodic and waveform voltage signals to the electrodes 204 on the RF rails 210), the atomic object may settle at a particular distance (e.g., from about 20 μm to about 200 μm) above the top surface (e.g., the coplanar top surfaces of the electrodes 204 and the RF rails 210) of the atomic object confinement apparatus 50. To further contribute to controlling the transition of the atomic objects and / or atomic object crystals along the desired trajectories, the atomic object confinement apparatus 50 may, in various embodiments, operate within a cryogenic and / or vacuum chamber 40 capable of cooling the atomic object confinement apparatus 50 to a temperature below 124 Kelvin (e.g., below 100 Kelvin, below 50 Kelvin, below 10 Kelvin, below 5 Kelvin, etc.).

[0110] Exemplary De-Excitation Operation In various embodiments, the controller 30 may control one or more components of the quantum computer to perform a de-excitation operation configured to reduce the kinetic energy of one or more atomic object crystals 220 confined by the atomic object confinement device 50. In various embodiments, the de-excitation operation may be performed at least partially in parallel with one or more transport operations and / or in a coordinated manner with one or more transport operations. In various embodiments, the performance of the de-excitation operation includes applying a respective series of voltages to the electrodes 204 of the electrode array formed by the several sequences 202 of electrical power to at least partially de-excite at least one motional mode of the atomic object crystals 220. In various embodiments, the performance of the transport operation includes applying a respective series of voltages to the electrodes 204 of the electrode array formed by the several sequences 202 of electrical power to transport the atomic objects and / or atomic object crystals along the transport path 232 from the respective starting locations 230 in the atomic object confinement device 50 to the respective destination locations 234 in the atomic object confinement device 50. As used herein, the term at least partially in parallel means at least semi / quasi-concurrently and / or when the performance of the operations at least partially overlaps in time. For example, acts that are performed at least partially in parallel may, in an illustrative embodiment, be performed simultaneously.

[0111] In various embodiments, each series of voltages is determined algebraically using simulations and / or experimentally based on the array of electrodes of atomic object confinement device 50 and the voltages that need to be applied to those electrodes to create the desired (time-dependent) potential well. In various embodiments, controller 30 stores (e.g., in memory 710) a library of carrier and / or shim waveforms that can be used to perform various transport and / or de-excitation operations, respectively.

[0112] In various embodiments, the controller 30 may control the voltage source 80 and / or the driver to apply a sequence of voltages to the electrodes 204 of the array of electrodes formed by the several sequences 202 of electrodes of the atomic object confinement device that causes one or more atomic objects 222, 224 and / or atomic object crystals 220 to undergo one or more transport and / or de-excitation operations. In various embodiments, the controller 30 is configured to cause the one or more transport and / or de-excitation operations to be performed at least partially in parallel. For example, the controller 30 may determine one or more carrier and / or shim waveforms to be applied. Each waveform includes a sequence of voltages to be applied to each electrode 204 and / or a subset of the electrodes of the electrode array formed by the several sequences 202 of electrodes.

[0113] In various embodiments, the series of voltages of the carrier waveform are configured to cause the atomic objects and / or atomic object crystals to perform a transport operation. For example, application of the series of voltages of the carrier waveform to an array of electrodes (in a time-ordered sequence specified by the series of voltages) causes a potential well to form at a start location 230 in the atomic object containment device at a first time. The atomic object crystal 220A to be transported is located at the start location 230 at a first time. Application of the series of voltages of the carrier waveform to the array of electrodes moves the potential well from the start location 230 to the destination location 234 such that the potential well, and the atomic objects and / or atomic object crystals therein, pass through a transport path 232 from the start location 230 to the destination location 234. The potential well, and the atomic objects 222, 224 and / or atomic object crystal 220, are located at the destination location 234 at a second time.

[0114] Similarly, the shim waveform includes a series of voltages. When the voltages of the series of voltages are applied to the electrode array in a time-ordered sequence specified by the series of voltages, a potential gradient that evolves over time is formed at the location of the atomic object crystal to be de-excited. The potential gradient is configured to provide a force on the atomic object crystal (and / or its components) that counteracts the oscillatory motion of the atomic object crystal (and / or its components). In an exemplary embodiment, the potential gradient is configured to move along the transport path 232 with the potential wells and the atomic objects 222, 224 and / or the atomic object crystal 220 to the destination location 234. In an exemplary embodiment, the shim waveform continues to provide a potential gradient at the destination location 234 for a period of time (e.g., until a third time) after the atomic objects 222, 224 and / or the atomic object crystal 220 arrive at the destination location 234. In illustrative embodiments, various laser cooling techniques may be used while the atomic objects 222, 224 and / or atomic object crystal 220 are located at the destination location 234 that at least partially overlaps with the time period during which an electric potential gradient is provided at the destination location 234 (e.g., at least a portion of the time between the second time and the third time).

[0115] 3 provides a schematic diagram of how the potential gradient generated at a location of the atomic object crystal 220 affects the coherent motion of the atomic object crystal 229 over one motion period of a COM mode oscillation. The dashed line 305 indicates the substantially constant location of the COM of the atomic object crystal 220 over time. The solid arrows indicate the respective accelerations a of the first component 222 of the atomic object crystal at various points in time. 1 and the respective accelerations a of the second components 224 of the atomic object crystal 220 2 The dashed arrows indicate the respective forces F experienced by the first component 222 of the atomic object crystal 220 as a result of the potential gradient. 1 and the respective force F experienced by the second component 224 of the atomic object crystal 220 as a result of the potential gradient. 2The potential gradient evolves over time according to the motion frequency of the motion mode, resulting in a force F experienced by the components of the atomic object crystal 220 as a result of the potential gradient, as can be seen in FIG. 1 , F 2 The direction and magnitude of (which is a function of time) is the acceleration a of the components of the atomic object crystal 220 as a result of the atomic object crystal oscillating in a kinetic mode. 1 , a 2 As a result, the force F experienced by the components of the atomic object crystal 220 as a result of the potential gradient is 1 , F 2 truncate (e.g., reduce the amplitude of) the kinetic mode oscillations. This results in the atomic object crystal having lower kinetic energy (e.g., less kinetic energy). In an exemplary embodiment, the force F experienced by the components of the atomic object crystal 220 as a result of the potential gradient is 1 , F 2 causes the motional mode oscillations to be eliminated such that the atomic object crystal 220 is in its motional ground state. In another exemplary embodiment, the atomic object crystal 220 reaches its motional ground state through a combination of de-excitation and laser cooling operations.

[0116] In various embodiments, various operations may be performed at least partially in parallel. For example, FIG. 2 shows a first atomic object crystal 220A.1 and a second atomic object crystal 220B.1 each located at a respective starting location 230 at a first time. FIG. 2 further shows that by a second time (after the first time), the first atomic object crystal 220A.2 and the second atomic object crystal 220B.2 are each located at a respective destination location 234 after passing through a respective transport path 232 between the first time and the second time. For example, the controller 30 may cause transport operations to be performed at least partially in parallel for the first atomic object crystal 220A and the second atomic object crystal 220B.

[0117] In addition, the controller 30 may cause a de-excitation operation to be performed on the first atomic object between the first time and a third time (which is the same as or later than the second time) and / or a de-excitation operation to be performed on the second atomic object between the first time and a third time. For example, the de-excitation operation may be configured to de-excite the motional modes of the respective atomic object crystals that were excited during the performance of the respective transport operations. In various scenarios, the motional mode excitation experienced by the first atomic object 220A may be different from the motional mode excitation experienced by the second atomic object 220B (e.g., due to differences in the respective transport operations (e.g., whether the transport path passes through one or more junctions of the atomic object confinement device, the length of the transport path, differences in the axial frequencies of the respective potential wells in which the respective atomic objects are confined / trapped / transported, etc.), differences between atomic object crystals, etc.). Thus, the carrier and shim waveforms used to perform the transport and de-excitation operations are localized, so that they affect the electrical potential at the instantaneous location of the target atomic object crystal 220, and do not affect the electrical potential at one or more other locations within the atomic object confinement device 50.

[0118] Exemplary Calibration of Shim Waveforms for De-Excitation Operation In various embodiments, the shim waveforms are determined based at least in part on one or more parameterized mode-specific shim waveforms. In various embodiments, the respective parameters for each of the one or more parameterized mode-specific shim waveforms are determined through a calibration process. In various embodiments, the respective parameters for the one or more parameterized mode-specific shim waveforms are determined in an automated manner. In various embodiments, the parameters are specific to the atomic object confinement device 50 and its electrode array. In various embodiments, the parameters of the parameterized mode-specific shim waveforms include and / or consist of a respective motion frequency for the corresponding specific motion mode, a respective motion amplitude for the corresponding specific motion mode, and a phase for the corresponding specific motion mode. In various embodiments, the respective motion frequency, motion amplitude, and / or phase are a function of an axial frequency of a potential well trapping and / or confining the target atomic object crystal. In various embodiments, the axial frequency of a potential well trapping and / or confining the target atomic object crystal is a parameter of the parameterized mode-specific shim waveform.

[0119] 4 provides a flow chart illustrating various processes, procedures, operations, etc. for performing a calibration process 400 to determine parameters for a shim waveform of a particular mode for a particular atomic object confinement device 50. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. of calibration process 400. For example, processing device 705 (see FIG. 7 ) of controller 30 executes computer readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. of calibration process 400.

[0120] 4, the controller 30 causes a transport operation to be performed. For example, the controller 30 causes a transport operation to be performed on the atomic object crystals 220. For example, the controller 30 may apply a series of voltages to the electrodes 204 of the electrode array of the atomic object confinement device 50 to move a potential well characterized by and / or defining an axial frequency along the transport path from a respective starting location to a respective destination location such that each atomic object crystal is transported along the transport path from a respective starting location to a respective destination location.

[0121] In step / operation 404, the controller 30 captures one or more first crystal spectra. For example, the controller 30 causes the manipulation source to generate and / or provide a manipulation signal that is incident on the atomic object crystal. In various embodiments, the manipulation signal defines and / or is characterized by a probe frequency. For example, the manipulation signal may be a laser beam at the probe frequency. In an exemplary embodiment, the manipulation signal is incident on the atomic object crystal for a fixed exposure time. In various embodiments, the probe frequency corresponds to a Raman transition of at least one component of the atomic object crystal (e.g., one of the atomic objects). The atomic object crystal (and / or its components) may scatter at least a portion of the manipulation signal and / or absorb at least a portion of the manipulation signal and emit light as a result of the absorption of the manipulation signal. This scattered and / or emitted light forms a first crystal spectrum. The light collection system 90 captures the first crystal spectrum and provides the first crystal spectrum to the controller 30.

[0122] In an exemplary embodiment, step / operation 404 is performed after performance of step / operation 402. In an exemplary embodiment, step / operation 404 is performed at one or more times during performance of step / operation 402.

[0123] In step / operation 406, the controller 30 (and / or computing entity 10) identifies and / or determines one or more sidebands in the first crystal spectrum. For example, the first crystal spectrum includes a line at the probe frequency. Due to the Doppler effect, the first crystal spectrum also includes one or more sidebands at respective frequencies that are each separated from the probe frequency by a respective motional frequency of a respective motional mode of the atomic object crystal excited by the transport operation. For example, the first crystal spectrum will include sidebands corresponding to the motional modes of the atomic object crystal excited by the transport operation. These sidebands, their respective motional frequencies, and their respective sideband intensities may be determined and / or identified via various spectrum analysis and / or processing techniques.

[0124] In step / operation 408, the controller 30 (and / or computing entity 10) determines and / or extracts motional amplitude information and motional frequency information from the first crystal spectrum for one or more motional modes of the atomic object crystal excited by the transport operation. In various embodiments, the motional frequencies of the various motional modes of the atomic object crystal are known such that identifying the motional frequencies present in the first crystal spectrum allows for determining which motional modes of the atomic object crystal were excited by the transport operation. In various embodiments, the intensity of each sideband is used to determine the motional amplitude of each motional mode. For example, the greater the intensity of each sideband, the greater the kinetic energy present in each motional mode. Thus, the motional frequency information and motional amplitude information determined based on the first crystal spectrum allows for determining which motional modes of the atomic object crystal were excited by the transport operation and how much kinetic energy is present in each of the motional modes of the atomic object crystal excited by the transport operation.

[0125] In step / operation 410, the controller 30 (and / or computing entity 10) determines a phase-parameterized shim waveform for which sidebands correspond to a particular motional mode detected in the first crystal spectrum. For example, the phase-parameterized shim waveform includes a series of voltages that can be shifted in time based on a phase parameter. For example, the phase-parameterized shim waveform is an oscillatory function of time and a function of the motion amplitude of the respective motional mode. For example, the amplitude of the resulting potential gradient can be

number

number

number

[0126] In step / action 412, the controller 30 increments through a phase range and causes the application of a phase-parameterized shim waveform while capturing a second crystal spectrum. For example, the controller 30 increments through a phase range over a first length of time.

number

number

number

number

number

number

number

number

number

[0127] In various embodiments, to capture each second crystal spectrum, the controller 30 causes the manipulation source to generate and / or provide a manipulation signal that is incident on the atomic object crystal. In various embodiments, the manipulation signal defines and / or is characterized by the same probe frequency used to capture the first crystal spectrum. In an exemplary embodiment, the manipulation signal is incident on the atomic object crystal for a fixed exposure time. Light scattered and / or emitted by the atomic object crystal as a result of the manipulation signal being incident on the atomic object crystal is captured by the light collection system 90 and collected (e.g., at a particular phase

number

number

[0128] In various embodiments, step / operation 402 is still performed while step / operation 412 is being performed. In various embodiments, step / operation 402 is performed again and / or iteratively during the performance of step / operation 412. In an exemplary embodiment, step / operation 412 includes the steps of iteratively performing a transport operation and respective phases.

number

number

[0129] In step / operation 414, one or more phases for which each corresponding second crystal spectrum includes the most significant intensity reduction and / or minimum intensity for each sideband compared to the first crystal spectrum and / or other second crystal spectra are determined and / or identified. For example, the controller 30 (and / or computing entity 10) analyzes and / or processes the multiple second crystal spectra to determine which of the second crystal spectra includes the minimum intensity for each sideband corresponding to each motion mode. In an exemplary embodiment, each of the second crystal spectra is compared to the first crystal spectrum to determine which of the second crystal spectra provides the greatest intensity reduction for each sideband corresponding to each motion mode.

[0130] a phase corresponding to the second crystal spectrum that is determined and / or identified as providing the most significant intensity reduction and / or minimum intensity for each sideband corresponding to each motional mode;

number

number

[0131] At step / operation 416, shim waveforms for the particular mode are provided and / or stored. For example, controller 30 may store the shim waveforms for the particular mode in memory 710 (e.g., as part of a waveform library, etc.). In various embodiments, the shim waveforms for the particular mode are stored in association with metadata. For example, the metadata may indicate the respective motion mode, a timestamp indicating when the shim waveform for the particular mode was generated, determined, and / or stored, one or more parameters of the shim waveform for the particular mode (e.g., motion frequency, motion amplitude, phase, axis frequency), axis frequency associated with the shim waveform for the particular mode, etc.

[0132] As noted, the shim waveforms for a particular mode are configured to de-excite a respective motional mode. However, multiple motional modes of the atomic object crystal may be excited by the transport operation. In various embodiments, the calibration process 400 and / or its various steps / operations are performed multiple times to generate and / or determine shim waveforms for multiple specific modes. For example, shim waveforms for a particular mode may be generated and / or determined for multiple motional modes. For example, the shim waveform library stored in the memory 710 may be populated with shim waveforms for a particular mode that correspond to one or more motional modes of the atomic object crystal. In various embodiments, the motional mode for which a shim waveform for a particular mode is determined may be determined and / or identified based on which motional mode and / or corresponding sidebands are identified in the first crystal spectrum.

[0133] In various embodiments, the calibration process 400 may include performing a transport operation on a plurality of atomic object crystals, capturing a first crystal spectrum for each of a plurality of the plurality of atomic object crystals, determining an aggregated first crystal spectrum based on the plurality of respective first crystal spectra, determining sidebands present in the aggregated first crystal spectrum, extracting motion frequency and / or motion amplitude information for one or more sidebands present in the aggregated first crystal spectrum, and determining one or more specific mode shim waveforms for each sideband and / or corresponding motion mode present in the aggregated first crystal spectrum based on application of phase-parameterized shim waveforms to the plurality of atomic object crystals and an aggregated second crystal spectrum determined therefrom.

[0134] In various embodiments, the calibration process 400 may be performed multiple times for transport operations corresponding to different axial frequencies such that the axial frequency dependence of the shim waveforms for a particular mode may be determined and / or such that the shim waveforms for multiple particular modes may be determined with each particular mode shim waveform corresponding to a respective axial frequency. In various embodiments, the shim waveforms for the particular modes that are determined are specific to the atomic object confinement device 50.

[0135] Exemplary implementation of de-excitation operation In various embodiments, the de-excitation operation may be performed during performance of a quantum computation, execution of a quantum program / circuit, etc. For example, the de-excitation operation may be performed at least partially in parallel with a transport operation and / or in a coordinated manner with a transport operation during performance of a quantum computation, execution of a quantum program / circuit, etc. In various embodiments, the atomic object confinement device 50 confines multiple atomic object crystals, and multiple transport and / or de-excitation operations are performed at least partially in parallel (e.g., at different locations (e.g., different respective starting and / or destination locations) within the atomic object confinement device 50). In various embodiments, a multi-mode de-excitation operation is performed.

[0136] FIG. 5 provides a flow chart illustrating various processes, procedures, operations, etc. that may be implemented by controller 30 to perform one or more de-excitation operations at least partially in parallel. In various embodiments, one or more de-excitation operations are performed at least partially in parallel and / or in coordination with a respective transport operation. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. illustrated in FIG. 5. For example, processing device 705 of controller 30 may execute computer readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. illustrated in FIG. 5.

[0137] Beginning at step / action 502, one or more transport operations to be performed are identified. For example, controller 30 identifies one or more transport operations to be performed at least partially in parallel. In various embodiments, each of the one or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location along a respective transport path of atomic object confinement device 50. In various embodiments, each transport operation is associated with a respective axial frequency. In various embodiments, the respective axial frequencies are the same or different from one another.

[0138] In step / operation 504, controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) respective carrier waveforms for one or more transport operations. In various embodiments, the respective carrier waveforms are determined, identified, and / or accessed based on a respective axial frequency for each transport operation. In an exemplary embodiment, for example, the respective carrier waveforms for each of the one or more transport operations are determined, identified, and / or accessed based on a respective start location of the transport operation, a respective destination location of the transport operation, a respective transport path of the transport operation, a respective axial frequency of the transport operation, etc. For example, the carrier waveform may include one or more localization parameters that control the location of the resulting potential well. The localization parameters may be set based on the start location, destination location, and / or transport path corresponding to the transport operation. For example, in an exemplary embodiment, the carrier waveform is configured such that the resulting potential well is localized at a time-dependent location corresponding to the transport path that causes the atomic object crystal to pass through the transport path.

[0139] In step / operation 506, controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) shim waveforms of each particular mode for one or more motion modes for at least one of the one or more transport operations. In an exemplary embodiment, controller 30 determines, identifies, and / or accesses shim waveforms of each particular mode for one or more motion modes for each respective transport operation of the one or more transport operations. For example, in an exemplary embodiment, a shim waveform of each particular mode for each primary motion mode expected to be excited for each transport operation of the one or more transport operations may be determined, identified, and / or accessed. In an exemplary embodiment, a shim waveform of each particular mode for two or more motion modes expected to be excited for each transport operation of the one or more transport operations is determined, identified, and / or accessed. For example, a shim waveform of a specific mode corresponding to a COM and / or stretching mode of each atomic object crystal may be determined, identified, and / or accessed.

[0140] In an exemplary embodiment, the result of the calibration process is a storage of multi-mode waveforms generated and / or determined by adding together and / or aggregating specific mode shim waveforms for two or more different motion modes. In such an embodiment, a respective multi-mode shim waveform may be determined, identified, or accessed for each transport operation of one or more transport operations. For example, a multi-mode shim waveform is an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motion mode of the respective atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motion mode of the respective atomic object crystal. The first coherent motion mode is characterized by a first motion frequency and the second coherent motion mode is characterized by a second motion frequency. The first motion frequency and the second motion frequency are different. For example, in an exemplary embodiment, the first motion frequency and the second motion frequency may differ by at least a factor of 1.5. For example, in an exemplary embodiment, the motion frequency of the COM mode of the atomic object crystal is about 1 MHz, and the motion frequency of the stretching mode of the atomic object crystal is about 1.8 MHz. As will be appreciated, the motion frequency of the motion modes of the atomic object crystal will depend on the components of the atomic object crystal and the environment the atomic object crystal encounters (e.g., the axial frequency of the potential well in which the atomic object crystal is confined, etc.).

[0141] In an exemplary embodiment, a shim waveform of a particular mode (or a shim waveform of a multi-mode) corresponding to a transport operation is determined, identified, and / or accessed based on a start location of the transport operation, a destination location of the transport operation, a transport path of the transport operation, an axial frequency of the transport operation, etc. For example, a shim waveform of a particular mode (or a shim waveform of a multi-mode) may include one or more localization parameters that control the location of the resulting potential gradient. The localization parameters may be set based on the start location, destination location, and / or transport path of the corresponding transport operation. For example, in an exemplary embodiment, when a de-excitation operation is performed at least partially in parallel with the transport operation, the shim waveform is configured such that the resulting potential gradient is localized at an instantaneous location of the atomic object crystal as the atomic object crystal passes through the transport path. In various embodiments, the parameters of the shim waveform are set based on the axial frequency of the transport operation (e.g., the motion amplitude, motion frequency, and / or phase of the shim waveform may be a function of the axial frequency), and / or a shim waveform corresponding to a particular axial frequency may be selected for performing a transport operation with a particular axial frequency.

[0142] In step / operation 508, the controller 30 determines an applied waveform based on the shim waveform of each particular mode and the respective carrier waveform. For example, the shim waveform of each particular mode determined, identified, and / or accessed in step / operation 506 and the carrier waveform determined, identified, and / or accessed in step / operation 504 are aggregated and / or added together to determine and / or generate an applied waveform. The applied waveform is a series of voltages including respective voltages to be applied to a subset and / or all of the electrodes 204 of the electrode array of the atomic object confinement device 50 over a series of respective time steps (e.g., between a first time and a second time and / or a third time). The series of voltages of the applied waveform, when applied to the electrodes 204 of the electrode array of the atomic object confinement device 50, are configured to generate respective potential wells, each configured to transport the respective atomic object crystals along the respective transport paths according to the respective transport operations, and generate respective potential gradients, each configured to de-excite one or more motional modes of the respective atomic object crystals. Each of the respective potential wells and respective potential gradients is localized at a location corresponding to a respective atomic object. For example, a first potential gradient configured to de-excite at least one motional mode of the first atomic object is configured to de-excite at least one motional mode of the first atomic object but not affect (e.g., excite or de-excite) any motional modes of the second atomic object. In various embodiments, the waveforms applied are determined by adding together voltages to the first electrode from each of the carrier waveforms and each of the shim waveforms of a particular mode (or shim waveforms of a multi-mode) over each time step in the series and over corresponding time steps relative to the first electrode 204.

[0143] In step / operation 510, controller 30 controls voltage source 80 to cause voltage source 80 to generate and provide a waveform voltage signal in accordance with a series of voltages of an applied waveform such that the waveform voltage signal is applied to electrodes 204 of an array of electrodes formed by several sequences of electrodes 202 of atomic object confinement device 50. In various embodiments, application of the waveform voltage signal generated in accordance with the series of voltages of the waveform applied from a first time to a second and / or third time to electrodes 204 causes one or more transport operations to be performed and causes de-excitation operations corresponding to one or more motion modes for at least one of the one or more transport operations to be performed.

[0144] In various embodiments, a cooling operation including laser cooling may be performed (e.g., between the second and third times) to further cool each atomic object crystal and / or to remove heat and / or kinetic / dynamic energy absorbed by each atomic object crystal during each transport operation.

[0145] As will be appreciated, the processes, steps, and / or operations illustrated in FIG. 5 may be repeated multiple times during the performance of a quantum computation and / or execution of a quantum program / circuit.

[0146] Exemplary implementations of at least partially parallel de-excitation operations with reduced parasitic crosstalk therebetween As explained above, in various embodiments, the atomic object confinement device 50 is formed on a chip or the like with electrical leads and / or electrical connections. The electrical leads and / or electrical connections allow a voltage signal (periodic voltage signal, waveform voltage signal, and / or other voltage signal) generated by the voltage source 80 to be applied to the electrodes (e.g., RF rail 210, electrodes 204) of the atomic object confinement device 50. In various scenarios, when a de-excitation operation is performed in an at least partially parallel manner at multiple locations within the atomic object confinement device 50, parasitic couplings in the wiring and / or wiring between different electrodes 204 may allow the waveform voltage signal applied to an electrode to appear on another electrode, thereby partially negating the localization of the de-excitation force. For example, parasitic crosstalk between wiring and / or wiring configured to provide the respective waveform voltage signals to different electrodes affects the ability to localize the resulting potential gradient at a desired location (e.g., at the location of the respective atomic object crystal). This may result in the excitation of motional modes of atomic object crystals other than the target atomic object crystal of the de-excitation operation. Thus, a technical challenge exists as to how to perform de-excitation operations in an at least partially parallel manner at different locations within an atomic object confinement device without unintentionally exciting motional modes of other atomic object crystals.

[0147] Various embodiments provide technical solutions to these technical problems, for example, shaft frequencies of conveying operations corresponding to respective de-excitation operations can be selected, assigned, etc., such that the shaft frequencies are spaced apart such that the waveform voltage signals are unlikely to be coupled.

[0148] FIG. 6 provides a flow chart illustrating various processes, procedures, operations, etc. that may be implemented by controller 30 to perform two or more de-excitation operations at least partially in parallel with reduced parasitic crosstalk. In various embodiments, the two or more de-excitation operations are performed at least partially in parallel and / or in coordination with respective transport operations. In various embodiments, controller 30 of quantum computer 110 controls one or more components of quantum computer 110 to perform the processes, procedures, operations, etc. illustrated in FIG. 6. For example, processing device 705 of controller 30 executes computer readable instructions (e.g., stored in memory 710) to cause processing device 705, memory 710, driver controller element 715, A / D converter 725, etc. of controller 30 to perform the various processes, procedures, operations, etc. illustrated in FIG. 6.

[0149] Beginning at step / action 602, two or more transport operations to be performed are identified. For example, the controller 30 identifies two or more transport operations to be performed at least partially in parallel. In various embodiments, each of the two or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location along a respective transport path within the atomic object confinement device 50 to a respective destination location.

[0150] In step / operation 604, a respective shaft frequency is determined and / or assigned to each of the two or more conveying operations. For example, the controller 30 determines a respective shaft frequency and / or assigns a respective shaft frequency to each of the two or more conveying operations. In various embodiments, the respective shaft frequencies are spaced apart from each other. For example, the respective shaft frequencies include a first shaft frequency and a second shaft frequency separated from each other by a frequency difference in the range of 0.05 to 10 MHz. In an exemplary embodiment, for a first shaft frequency of the respective shaft frequencies, none of the other respective shaft frequencies is within a minimum frequency difference of the first shaft frequency. In an exemplary embodiment, the minimum frequency difference is in the range of 0.05 to 10 MHz. In an exemplary embodiment, the minimum frequency difference is about 100 kHz. In an exemplary embodiment, the frequency difference is in the range of 50 kHz to 1 MHz.

[0151] In step / operation 606, the controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) respective carrier waveforms for the one or more transport operations. In various embodiments, the respective carrier waveforms are determined, identified, and / or accessed based on the respective axial frequencies determined and / or assigned for each transport operation. In an exemplary embodiment, the respective carrier waveforms are determined, identified, and / or accessed for each of the one or more transport operations based, for example, on the respective start locations of the transport operations, the respective destination locations of the transport operations, the respective transport paths of the transport operations, the determined and / or assigned respective axial frequencies of the transport operations, etc. For example, the carrier waveforms may include one or more localization parameters that control the location of the resulting potential well. The localization parameters may be set based on the start location, destination location, and / or transport path of the corresponding transport operation. For example, in an exemplary embodiment, the carrier waveforms are configured such that the resulting potential wells are localized at time-dependent locations corresponding to the transport paths that cause the atomic object crystal to pass through the transport path.

[0152] In step / operation 608, controller 30 determines, identifies, and / or accesses (e.g., from a waveform library stored in memory 710) respective specific mode shim waveforms for one or more motion modes for at least one of the one or more transport operations. In an exemplary embodiment, controller 30 determines, identifies, and / or accesses respective specific mode shim waveforms for one or more motion modes for each respective transport operation of the one or more transport operations. For example, in an exemplary embodiment, a respective specific mode shim waveform for each primary motion mode expected to be excited for each transport operation of the one or more transport operations may be determined, identified, and / or accessed. In an exemplary embodiment, a respective specific mode shim waveform for two or more motion modes expected to be excited for each transport operation of the one or more transport operations is determined, identified, and / or accessed. For example, a respective specific mode shim waveform corresponding to a COM and / or stretching mode of each atomic object crystal may be determined, identified, and / or accessed.

[0153] In an exemplary embodiment, the result of the calibration process is a storage of multi-mode waveforms generated and / or determined by adding together and / or aggregating specific mode shim waveforms for two or more different motion modes. In such an embodiment, each multi-mode shim waveform may be determined, identified, and / or accessed for each transport operation of one or more transport operations. For example, the multi-mode shim waveform is an aggregation of at least (a) a first specific mode shim waveform corresponding to a first coherent motion mode of the respective atomic object crystal and (b) a second specific mode shim waveform corresponding to a second coherent motion mode of the respective atomic object crystal. The first coherent motion mode is characterized by a first motion frequency and the second coherent motion mode is characterized by a second motion frequency. The first motion frequency and the second motion frequency are different. For example, in an exemplary embodiment, the first motion frequency and the second motion frequency may differ by at least a factor of 1.5.

[0154] In an exemplary embodiment, a shim waveform of a particular mode (or a shim waveform of a multi-mode) corresponding to a transport operation is determined, identified, and / or accessed based on a start location of the transport operation, a destination location of the transport operation, a transport path of the transport operation, a determined and / or assigned axis frequency of the transport operation, etc. For example, a shim waveform of a particular mode (or a shim waveform of a multi-mode) may include one or more localization parameters that control the location of the resulting potential gradient. The localization parameters may be set based on the start location, destination location, and / or transport path of the corresponding transport operation. For example, in an exemplary embodiment, when a de-excitation operation is performed at least partially in parallel with a transport operation, the shim waveform is configured such that the resulting potential gradient is localized at an instantaneous location of the atomic object crystal as the atomic object crystal passes through the transport path. In various embodiments, parameters of the shim waveform are set based on the determined and / or assigned shaft frequency of the transport operation (e.g., the motion amplitude, motion frequency, and / or phase of the shim waveform are functions of the shaft frequency) and / or a shim waveform corresponding to a particular determined and / or assigned shaft frequency is selected for performing a transport operation with the particular determined and / or assigned shaft frequency.

[0155] In step / operation 610, the controller 30 determines an applied waveform based on the shim waveform of each particular mode and the respective carrier waveform. For example, the shim waveform of each particular mode determined, identified, and / or accessed in step / operation 608 and the carrier waveform determined, identified, and / or accessed in step / operation 606 are aggregated and / or added together to determine and / or generate an applied waveform. The applied waveform is a series of voltages including respective voltages to be applied to a subset and / or all of the electrodes 204 of the electrode array of the atomic object confinement device 50 for each time step in the series (e.g., between a first time and a second time and / or a third time). The series of voltages of the applied waveform, when applied to the electrodes 204 of the electrode array of the atomic object confinement device 50, are configured to generate respective potential wells, each configured to transport the respective atomic object crystals along the respective transport paths according to the respective transport operations, and to generate respective potential gradients, each configured to de-excite one or more motional modes of the respective atomic object crystals.

[0156] Each of the respective potential wells and respective potential gradients is localized at a location corresponding to a respective atomic object. For example, a first potential gradient configured to de-excite at least one motional mode of the first atomic object is configured to de-excite at least one motional mode of the first atomic object but not affect (e.g., excite or de-excite) any motional modes of the second atomic object. In various embodiments, the waveforms applied are determined by adding together voltages to the first electrode from each of the carrier waveforms and each of the shim waveforms of a particular mode (or shim waveforms of a multi-mode) over each time step in the series and over corresponding time steps relative to the first electrode 204.

[0157] In step / operation 612, controller 30 controls voltage source 80 to cause voltage source 80 to generate and provide a waveform voltage signal in accordance with a series of voltages of an applied waveform such that the waveform voltage signal is applied to electrodes 204 of an array of electrodes formed by several sequences of electrodes 202 of atomic object confinement device 50. In various embodiments, application of the waveform voltage signal generated in accordance with the series of voltages of the waveform applied from a first time to a second and / or third time to electrodes 204 causes one or more transport operations to be performed and causes de-excitation operations corresponding to one or more motion modes for at least one of the one or more transport operations to be performed.

[0158] Moreover, the difference in the respective axial frequencies associated with the two or more transport operations reduces parasitic crosstalk between the wiring and / or conductors configured to provide the waveform voltage signals to the electrodes 204, thereby preserving localization of the potential wells and / or potential gradients. For example, the difference in the respective axial frequencies associated with the two or more transport operations reduces parasitic crosstalk between the wiring and / or conductors configured to provide the waveform voltage signals to the electrodes 204, isolating the effects of the transport operations and the de-excitation operations to the respective target atomic object crystals.

[0159] In various embodiments, during each transport operation, a cooling operation including laser cooling may also be performed (e.g., between the second and third times) to further cool each atomic object crystal and / or to remove heat and / or kinetic / dynamic energy absorbed by each atomic object crystal.

[0160] As will be appreciated, the processes, steps, and / or operations illustrated in FIG. 6 may be repeated multiple times during the performance of a quantum computation and / or execution of a quantum program / circuit.

[0161] Technical advantages In various scenarios, during the performance of an experiment, controlled quantum state evolution, quantum computation, and the like, atomic objects and / or atomic object crystals may be transported from their respective starting locations within the atomic object confinement device to their respective destination locations within the atomic object confinement device. During such transport operations, the atomic objects and / or atomic object crystals are excited such that the atomic objects and / or atomic object crystals are no longer in their kinetic ground state. Conventionally, laser cooling is used to reduce the kinetic energy of the atomic objects and / or their components. However, laser cooling is a slow process compared to various other processes performed during the performance of an experiment, controlled quantum state evolution, quantum computation, and the like. For example, the time required to perform the transport and cooling operations is conventionally considered a limiting factor in the computational speed of a QCCD quantum computer. Moreover, the significant amount of time required to cool the atomic object crystal after performing the transport operation limits the depth of the quantum circuit and / or quantum program that can be implemented by a QCCD quantum computer and may contribute to memory errors. Thus, a technical challenge exists as to how to quickly and efficiently reduce the kinetic energy of the atomic object crystal and de-excite the kinetic state of the atomic object crystal.

[0162] An atomic object crystal including two atomic objects (e.g., a coolant ion and a qubit ion) may oscillate in a center-of-mass mode, in which the two atomic objects oscillate in such a way that the distance between the two atomic objects remains substantially constant, such that the center of mass (COM) of the atomic object crystal oscillates. An atomic object crystal including two atomic objects may also oscillate in a stretching mode, in which the distance between the two atomic objects periodically stretches and contracts. In addition, the atomic object crystal may oscillate in a superposition of a COM mode and / or a stretching mode, which may have different motion frequencies, motion amplitudes, and / or phases. Additional motion modes and their superpositions are also possible, especially when the charge-to-mass ratios of the components of the atomic object crystal are different. De-excitation of these superpositions of motion modes therefore presents a technical challenge.

[0163] An additional technical challenge is presented when the atomic object crystal to be de-excited is one of multiple atomic object crystals confined by an atomic object confinement device. In such a scenario, it is desired to de-excite the particular atomic object crystal without simultaneously exciting any of the other atomic object crystals that are also confined by the atomic object confinement device. It may also be desired to perform two or more de-excitation operations at least partially in parallel (e.g., semi-simultaneously and / or with the performance of the de-excitation operations at least partially overlapping in time). Thus, a technical challenge exists as to how to localize the effect of the de-excitation operations.

[0164] Various embodiments provide technical solutions to these and other technical challenges related to de-excitation of coherent motional modes of an atomic object crystal confined by an atomic object confinement device. For example, various embodiments provide mode-specific and / or multi-mode shim waveforms. The shim waveform includes a series of voltages. The series of voltages includes voltages to be applied to each electrode and / or a subset of electrodes of an electrode array of the atomic object confinement device at multiple time steps. When the voltages of the series of voltages are applied to the electrode array of the atomic object confinement device in a time-ordered sequence specified by the series of voltages, a potential gradient that evolves over time is formed at a location of the atomic object crystal to be de-excited. The potential gradient is configured to impart a force to the atomic object crystal (and / or components thereof) that counteracts an oscillatory motion of the atomic object crystal (and / or components thereof).

[0165] In various embodiments, the mode-specific and / or multi-mode shim waveforms are configured to localize the resulting potential gradient at a specific location within the atomic object confinement device. For example, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient is localized at the location of the target atomic object crystal without affecting other nearby atomic object crystals and / or other atomic object crystals within the atomic object confinement device. In various embodiments, the mode-specific and / or multi-mode shim waveforms may be configured such that the location of the resulting potential gradient may be non-constant such that a de-excitation operation may be performed on the atomic object crystal at least partially in parallel (e.g., semi-concurrently and / or where the performance of the operations overlaps at least partially in time) with the performance of a transport operation on the atomic object crystal. For example, a de-excitation operation may be performed on the atomic object crystal while the atomic object crystal is being transported to further reduce the time required to perform transport and cooling of the atomic object crystal.

[0166] Moreover, various embodiments provide multi-mode shim waveforms that are configured to cause de-excitation of multiple motion modes simultaneously. For example, a multi-mode shim waveform can be configured such that the resulting potential gradient and its time evolution simultaneously de-excites COM modes, stretch modes, and / or other motion modes.

[0167] In addition, when multiple de-excitation operations are performed in an at least partially parallel manner at different locations within the atomic object confinement device, parasitic crosstalk between the conductors and / or wires configured to provide respective waveform voltage signals to the electrodes 204 of the atomic object confinement device may degrade the localization of the effect of the de-excitation operations, which may unintentionally excite motional modes within the atomic object crystal, causing further technical challenges.

[0168] Various embodiments are configured to decouple parasitic coupling between conductors and / or wires configured to provide the respective waveform voltage signals to the electrodes 204 such that crosstalk therebetween is reduced and / or eliminated. For example, axial frequencies of corresponding conveying motions are determined and / or assigned in a spaced apart manner, thereby reducing parasitic coupling between conductors and / or wires configured to provide the respective waveform voltage signals to the electrodes 204 caused by oscillating waveform voltage signals corresponding to the respective shim waveforms.

[0169] Exemplary Controller In various embodiments, quantum computer 110 comprises a controller 30 configured to control various elements of quantum computer 110. In various embodiments, controller 30 may be configured to cause quantum computer 110 to perform various operations (e.g., computational operations such as gating operations, cooling operations, transport operations, qubit interaction operations, qubit measurement operations, leakage suppression / transduction operations, etc.). For example, controller 30 may be configured to perform one or more transport operations, one or more de-excitation operations, etc. For example, the controller 30 may be configured to control the cryogenic and / or vacuum chamber 40, the manipulation source 64, a voltage source configured to apply a voltage signal (e.g., a periodic voltage signal, a waveform voltage signal) to the electrodes (e.g., RF rail 210, electrode 204) of the atomic object confinement device 50, the magnetic field generator 70, and / or a cryogenic system and / or vacuum system that controls the environmental conditions (e.g., temperature, humidity, pressure, etc.) within the cryogenic and / or vacuum chamber 40 and / or controls the temperature and pressure within a system configured to manipulate and / or cause a controlled quantum state evolution of one or more atomic objects within the atomic object confinement device 50.

[0170] As shown in FIG. 7, in various embodiments, the controller 30 may comprise various controller elements including a processing element 705, a memory 710, a driver controller element 715, a communication interface 720, an analog-to-digital conversion element 725, etc. For example, the processing element 705 may comprise a programmable logic device (PLD), a microprocessor, a co-processing entity, an application-specific instruction-set processor (ASIP), an integrated circuit, an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a programmable logic array (PLA), a hardware accelerator, other processing devices and / or circuits, etc., and / or a controller. The term circuit may refer to an entity hardware embodiment or a combination of hardware and a computer program product. In an exemplary embodiment, the processing element 705 of the controller 30 comprises and / or is in communication with a clock.

[0171] For example, memory 710 may comprise non-transitory memory, such as volatile and / or non-volatile memory storage devices, such as one or more of a hard disk, ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory cards, memory sticks, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, register memory, etc. In various embodiments, memory 710 may store qubit records corresponding to qubits of a quantum computer (e.g., in a qubit record data store, a qubit record database, a qubit record table, etc.), calibration tables, executable cues, computer program code (e.g., in one or more computer languages, a specified controller language, etc.), etc. In an exemplary embodiment, execution of at least a portion of the computer program code stored in memory 710 (e.g., by processing element 705) causes controller 30 to perform one or more steps, operations, processes, procedures, etc. described herein.

[0172] In various embodiments, the driver controller element 715 may include one or more drivers and / or controller elements each configured to control one or more drivers. In various embodiments, the driver controller element 715 may comprise a driver and / or a driver controller. For example, a driver controller may be configured to cause one or more corresponding drivers to operate according to executable instructions, commands, etc. scheduled and executed by the controller 30 (e.g., by the processing element 705). In various embodiments, the driver controller element 715 may enable the controller 30 to operate and / or control one or more operational sources 64, control one or more magnetic field generators 70, control one or more voltage sources 80 and / or drivers, operate a vacuum and / or cryogenic system, etc. In various embodiments, the drivers may be laser drivers, vacuum component drivers, voltage sources (e.g., AC voltage sources, arbitrary waveform generators (AWGs), direct digital synthesizers (DDSs), etc.), cryogenic and / or vacuum system component drivers, etc. In various embodiments, controller 30 comprises means for communicating and / or receiving signals from one or more optical receiver components, such as a camera, a MEMs camera, a CCD camera, a photodiode, a photomultiplier tube, etc. For example, controller 30 may comprise one or more analog-to-digital conversion elements 725 configured to receive signals from one or more optical receiver components, calibration sensors, etc. For example, controller 30 may receive, via analog-to-digital conversion elements 725, measurements corresponding to conditions in particular regions and / or portions of atomic object confinement device 50 and / or corresponding to various atomic objects.

[0173] In various embodiments, the controller 30 may comprise a communications interface 720 for interfacing and / or communicating with the computing entity 10. For example, the controller 30 may comprise a communications interface 720 for receiving executable instructions, command sets, etc. from the computing entity 10 and for providing quantum computer 110 with outputs received (e.g., from a light collection system or other measurement system) and / or processed results of the outputs to the computing entity 10. In various embodiments, the computing entity 10 and the controller 30 may communicate via a direct wired and / or wireless connection and / or one or more wired and / or wireless networks 20.

[0174] Exemplary Computing Entity 8 provides an illustrative schematic diagram of an exemplary computing entity 10 that may be used with embodiments of the present invention. In various embodiments, computing entity 10 is configured to enable a user to provide input to quantum computer 110 (e.g., via a user interface of computing entity 10) and receive, display, analyze, etc., output from quantum computer 110. For example, a user may operate computing entity 10 to generate and / or program quantum algorithms and / or quantum circuits that may be provided such that controller 30 can receive the quantum algorithms and / or quantum circuits and cause quantum computer 110 to implement the quantum algorithms and / or quantum circuits.

[0175] 8, the computing entity 10 may include an antenna 812, a transmitter 814 (e.g., wireless), a receiver 806 (e.g., radio), and a processing device and / or element 808 that provides signals to and receives signals from the transmitter 814 and receiver 806, respectively. The signals provided to and received from the transmitter 814 and receiver 806, respectively, may include signaling information / data in accordance with an air interface standard of an applicable interface system for communicating with various entities, such as the controller 30, other computing entities 10, etc. In this regard, the computing entity 10 may be capable of operating with one or more air interface standards, communication protocols, modulation types, and access types. For example, computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as fiber distributed data interface (FDDI), digital subscriber line (DSL), Ethernet, asynchronous transfer mode (ATM), frame relay, data over cable service interface specification (DOCSIS), or any other wired transmission protocol. Similarly, computing entity 10 may be configured to receive and / or provide communications using a wired data transmission protocol, such as general packet radio service (GPRS), Universal Mobile Telecommunications System (UMTS), Code Division Multiple Access 2000 (CDMA2000), CDMA2000 1X (1xRTT), Wideband Code Division Multiple Access (WCDAM), Global System for Mobile Communications (GSM), or other wired data transmission protocols.Mobile Communications, Enhanced Data rates for GSM Evolution (EDGE), Time Division-Synchronous Code Division Multiple Access (TD-SCDMA), Long Term Evolution (LTE), Evolved Universal Terrestrial Radio Access Network (E-UTRAN), Evolution-Data Optimized (EVDO), High Speed ​​Packet Access (HSPA), High Speed ​​Downlink Packet Access (HSDPA), IEEE 802.11 (Wi-Fi), Wi-Fi Direct, 802.16 (WiMAX), ultra wideband (UWB), infrared (IR) protocol, near field communication (NFC) protocol, Wibree, Bluetooth protocol, wireless universal serial bus (USB) The computing entity 10 may be configured to communicate over the wireless external communications network using any of a variety of protocols, such as the Border Gateway Protocol (BGP), Dynamic Host Configuration Protocol (DHCP), Domain Name System (DNS), File Transfer Protocol (FTP), Hypertext Transfer Protocol (HTTP), and / or any other wireless protocol.Such protocols and standards may be used to communicate using HTTP over TLS / SSL / Secure, Internet Message Access Protocol (IMAP), Network Time Protocol (NTP), Simple Mail Transfer Protocol (SMTP), Telnet, Transport Layer Security (TLS), Secure Sockets Layer (SSL), Internet Protocol (IP), Transmission Control Protocol (TCP), User Datagram Protocol (UDP), Datagram Congestion Control Protocol (DCCP), Stream Control Transmission Protocol (SCTP), HyperText Markup Language (HTML), and the like.

[0176] Through these communication standards and protocols, computing entity 10 may communicate with various other entities using concepts such as Unstructured Supplementary Service information / data (USSD), Short Message Service (SMS), Multimedia Messaging Service (MMS), Dual-Tone Multi-Frequency Signaling (DTMF), and / or Subscriber Identity Module Dialer (SIM dialer), etc. Computing entity 10 may also download modifications, add-ons, and updates to, for example, its firmware, software (including, for example, executable instructions, applications, program modules), and operating system.

[0177] The computing entity 10 may comprise a user interface device comprising one or more user input / output interfaces (e.g., a display 816 coupled to the processing device and / or elements 808 and a touch screen and / or a speaker / speaker driver, a keyboard, a mouse, and / or a microphone coupled to the processing device and / or elements 808). For example, the user output interface may be configured to provide applications, browsers, user interfaces, interfaces, dashboards, screens, web pages, pages, and / or similar terms used interchangeably herein that execute and / or are accessible on the computing entity 10 to cause a display or audible presentation of information / data and to interact therewith via one or more user input interfaces. The user input interface may comprise any of a number of devices that enable the computing entity 10 to receive data, such as a keypad 818 (hard or soft), a touch display, a voice / audio or motion interface, a scanner, a reader, or other input device. In embodiments including a keyboard 818, the keypad 818 may include (or may display) a traditional numeric keypad (0-9) and related keys (#, *), and other keys used to operate computing entity 10, and may include a set of keys that may be activated to provide a full set of alphabetic keys or a full set of alphanumeric keys. In addition to providing input, the user input interface may be used to activate or deactivate certain features, such as, for example, a screen saver and / or a sleep mode. Through such input, computing entity 10 may collect information / data, user interaction / input, and the like.

[0178] The computing entity 10 may include volatile storage or memory 822 and / or non-volatile storage or memory 824, which may be embedded and / or removable. For example, the non-volatile memory may be ROM, PROM, EPROM, EEPROM, flash memory, MMC, SD memory card, memory stick, CBRAM, PRAM, FeRAM, RRAM, SONOS, racetrack memory, etc. The volatile memory may be RAM, DRAM, SRAM, FPM DRAM, EDO DRAM, SDRAM, DDR SDRAM, DDR2 SDRAM, DDR3 SDRAM, RDRAM, RIMM, DIMM, SIMM, VRAM, cache memory, registered memory, etc. The volatile and non-volatile storage or memory may store databases, database instances, database management system entities, data, applications, programs, program modules, scripts, source code, object code, byte code, compiled code, interpreted code, machine code, executable instructions, etc. for implementing the functionality of the computing entity 10.

[0179] conclusion Many modifications and other embodiments of the inventions described herein will come to mind to one skilled in the art to which these inventions pertain having the benefit of the teachings presented in the foregoing descriptions and the associated drawings. It is to be understood, therefore, that the invention is not limited to the specific embodiments disclosed, and that modifications and other embodiments are intended to be included within the scope of the appended claims. Although specific terms have been employed herein, they are used in a generic and descriptive sense and not for purposes of limitation. [Explanation of symbols]

[0180] 10 Computing Entities 20 Wired or Wireless Network 30 Controller, Quantum System Controller 40 Cryogenic and / or Vacuum Tubes 50 Atomic object confinement device, device 64 Operation source 64A Control source, first control source 64B Control source, second control source 64C operation source 66 Beam Path 66A Beam Path 66B Beam Path 66C Beam Path 70 Magnetic field generator 70A magnetic field generator, internal magnetic field generator 70B Magnetic field generator, external magnetic field generator 80 Voltage Source 90 Light Concentration System 100 Quantum Computer System 110 Quantum Computer 200 part 202 several sequences of electrodes, three sequences of electrodes, multiple sequences of electrodes, sequence of electrodes, each sequence of electrodes 202A Electrode sequence, first sequence of electrodes 202B sequence of electrodes, one or more sequences of electrodes, second sequence of TT electrodes, second sequence of electrodes 202C Sequence of electrodes, third sequence of electrodes 204 Electrode 210 RF Rail, Radio Frequency (RF) Rail 210A Radio Frequency (RF) Rail 210B Radio Frequency (RF) Rail 212 dashed line 215 Vertical gap 220 Atomic Object Crystal 220A First Atomic Object Crystal 220A.1 First atomic object crystal 220A.2 First atomic object crystal 220B Second Atomic Object Crystal 220B.1 Second Atomic Object Crystal 220B.2 Second Atomic Object Crystal 222 First component, atomic object 224 Second component, atomic object 230 Starting Location 232 Transport Route 234 Destination Location 400 Calibration Process 705 Processing Devices, Processing Elements 710 Memory 715 Driver Controller Element 720 Communication Interface 725 A / D Converter, Analog to Digital Conversion Element 806 Receiver 808 Processing devices and / or elements 812 Antenna 814 Transmitter 816 Display 818 Keypad 822 Volatile Memory 824 Non-volatile memory

Claims

1. 1. A method for calibrating parameters of a shim waveform for a particular atomic object containment device, comprising the steps of: causing said particular atomic object confinement device to perform a transport operation on at least one atomic object crystal confined by said atomic object confinement device; capturing a first crystal spectrum for the atomic object crystal; identifying one or more sidebands in the first crystal spectrum; determining a respective motion frequency and a respective motion amplitude for each of the one or more sidebands based on the first crystal spectrum; determining a phase-parameterized shim waveform based on the respective motion frequencies and the respective motion amplitudes, the phase-parameterized shim waveform being a function of phase; applying the phase-parameterized shim waveform to the atomic object crystal while a phase parameter of the phase-parameterized shim waveform is incremented across a phase range, and capturing one or more second crystal spectra; determining a phase within the phase range that minimizes at least each sideband of the one or more sidebands based on the one or more second crystal spectra; determining a shim waveform for a particular mode based on the phase-parameterized shim waveform and the phase; providing or storing said shim waveform for use when performing a quantum operation using said particular atomic object confinement device.

2. Determining a plurality of phase parameterized shim waveforms, 2. The method of claim 1 , further comprising: determining each of the plurality of phase-parameterized shim waveforms and a respective phase corresponding to a respective sideband of the one or more sidebands based at least in part on application of each of the plurality of phase-parameterized shim waveforms to the atomic object crystal and the one or more second crystal spectra.

3. The method of claim 2 , further comprising determining a multi-mode shim waveform based on the plurality of phase-parameterized shim waveforms and the respective phases.

4. 2. The method of claim 1 , wherein the particular mode shim waveform comprises a series of voltages to be applied to an array of electrodes of the particular atomic object confinement device to reduce the kinetic energy of each particular mode of the atomic object crystal.

5. the particular mode shim waveform is configured to induce a gradient in the electric potential at a first location of the particular atomic object confinement device and to induce no gradient in the electric field at one or more second locations of the particular atomic object confinement device when the particular mode shim waveform is applied to the array of electrodes; The method of claim 4 , wherein the atomic object crystal is located at the first location and not at any of the one or more second locations.

6. the particular mode shim waveform is associated with or parameterized by an axial frequency corresponding to at least one of (a) the transport motion or (b) a potential well at a first location of the particular atomic object confinement device; The method of claim 1 , wherein the atomic object crystal is located at the first location.

7. Capturing each of the first and second crystal spectra comprises: probing the atomic object crystal with a laser beam for a fixed exposure time, the laser beam being characterized by a probe frequency corresponding to a Raman transition of at least one component of the atomic object crystal; and detecting light emitted by the atomic object crystal in response to the laser beam being incident on the atomic object crystal.

8. the respective spectra of the first crystal spectrum and the second crystal spectrum include a primary line at the probe frequency; The method of claim 7 , wherein the one or more sidebands are each spaced apart from the primary line by a respective frequency that corresponds to the respective frequency of motion.

9. 1. A method for using coherent mode de-excitation during a transport operation of an atomic object crystal confined by an atomic object confinement device, comprising: Identifying one or more transport operations to be performed at least partially in parallel, - each transport operation of said one or more transport operations corresponds to moving a respective atomic object crystal from a respective starting location to a respective destination location, said starting location and said destination location being locations within said atomic object confinement device; determining a respective shim waveform for at least one of the one or more transport operations; determining a respective carrier waveform for each transport operation; determining an applied waveform based on an aggregation of the respective shim waveforms and the respective carrier waveforms; controlling one or more voltage sources to apply a waveform voltage signal according to said applied waveform to electrodes of an array of electrodes of said atomic object confinement device; applying the applied waveform to the array of electrodes; performing each of the one or more transport operations on the respective atomic object crystal; de-exciting at least one coherent motional mode of said respective atomic object crystal corresponding to at least one of said one or more transport operations.

10. each said shim waveform being an aggregation of two or more shim waveforms for a particular mode; 10. The method of claim 9, wherein each of the two or more particular mode shim waveforms corresponds to a different coherent mode of motion of the respective atomic object crystal.

11. each said shim waveform being an aggregation of at least (a) a first particular mode shim waveform corresponding to a first coherent motion mode of said each atomic object crystal, and (b) a second particular mode shim waveform corresponding to a second coherent motion mode of said each atomic object crystal; the first coherent motional mode is characterized by a first motional frequency; the second coherent motional mode being characterized by a second motional frequency; The method of claim 9 , wherein the first movement frequency and the second movement frequency are different.

12. the first coherent motion mode is a center-of-mass mode; The method of claim 11 , wherein the second coherent motion mode is a stretching mode.

13. 10. The method of claim 9, wherein the applied waveform comprises a series of voltages to be applied to an array of electrodes of the atomic object confinement device to cause the one or more transport operations to be performed and to induce a gradient in the electric potential at a first location of the atomic object confinement device where the respective atomic object crystal corresponding to at least one transport operation is located within a particular atomic object confinement device.

14. The method of claim 13 , wherein the first location follows the atomic object crystal from the respective starting location of at least one of the one or more transport operations to the respective destination location.

15. At least one of the one or more transport operations includes at least a first transport operation and a second transport operation; the first transport operation includes moving a first potential well in which a first atomic object crystal is located from a first starting location to a first destination location; the second transport operation includes moving a second potential well in which a second atomic object crystal is located from a second starting location to a second destination location; 14. The method of claim 13, wherein the applied waveforms include: (a) at least one particular mode shim waveform configured to induce a first gradient in the potential collocated with the first potential well as the first potential well moves from the first starting location to the first destination location; and (b) at least one particular mode shim waveform configured to induce a second gradient in the potential collocated with the second potential well as the second potential well moves from the second starting location to the second destination location.

16. the first gradient is substantially zero at the location of the second atomic object crystal; 16. The method of claim 15, wherein the second gradient is substantially zero at the location of the first atomic object crystal.

17. the first potential well defines a first axial frequency; the second potential well defines a second axial frequency; 16. The method of claim 15, wherein the first axis frequency and the second axis frequency are separated by 0.05 to 5 MHz.

18. 10. The method of claim 9, wherein each particular mode shim waveform is associated with or parameterized by a respective axial frequency that corresponds to at least one of (a) the transport motion or (b) a potential well at a particular atomic object confinement device location in which the respective atomic object crystal is located.

19. 10. The method of claim 9, wherein the shim waveforms for each particular mode are each parameterized by a respective motional mode frequency, a respective motional mode amplitude, and a respective phase.

20. 1. A method for reducing parasitic crosstalk between de-excitation operations performed at least partially in parallel at different locations in an atomic object confinement device, comprising: determining a first de-excitation operation to be performed at a first location within the atomic object confinement device and a second de-excitation operation to be performed at a second location within the atomic object confinement device; assigning a first axial frequency to a first potential well located at the first location and assigning a second axial frequency to a second potential well located at the second location, the first axis frequency and the second axis frequency being spaced apart from each other by 0.05 to 5 MHz; determining a first shim waveform corresponding to the first shaft frequency and a second shim waveform corresponding to the second shaft frequency; and controlling one or more voltage sources to apply respective waveform voltage signals to electrodes of an electrode array of the atomic object confinement device to cause the first potential well to be characterized by the first axial frequency, the second potential well to be characterized by the second axial frequency, the first de-excitation operation to be performed at the first location based on the first shim waveform, and the second de-excitation operation to be performed at the second location based on the second shim waveform.

Images