Method for producing shallow junction diffused emitter crystalline silicon solar cells and their uses.

JP2025506784AActive Publication Date: 2025-03-13HENGDIAN GRP DMEGC MAGNETICS CO LTD
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
JP2024549678
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-03-24
Filing Date
2022-10-28
Publication Date
2025-03-13
Estimated Expiration
2042-10-28

Smart Images

  • Figure 2025506784000001_ABST
    Figure 2025506784000001_ABST
Patent Text Reader

Abstract

The present application provides a method for manufacturing a shallow junction diffused emitter crystalline silicon solar cell and its use. The manufacturing method includes a diffusion process and a chain oxidation process, the diffusion process includes low temperature diffusion and high temperature drive-in, and the chain oxidation process includes high temperature chain oxidation. The present application first optimizes the diffusion process to manufacture a low doped diffused shallow junction with a depth of 0.15um, and then utilizes the photon thermal activation radiation energy of the high temperature chain oxidation to form a constant dose concentration of doping on the surface of the diffusion layer, thereby solving the mismatch problem of forming alloy ohmic contact with the silver paste, and finally achieving a high photoelectric conversion efficiency improvement.
Need to check novelty before this filing date? Find Prior Art

Citation Information

Patent Citations

  • A step-by-step phosphorus doping method for high-efficiency and low-cost crystalline silicon batteries

    CN109166794A

  • Thick oxide layer diffusion process for reducing SE laser damage

    CN112820801A

  • Diffusion method suitable for LDSE technology

    CN112928180A

  • SE diffusion method and obtained silicon wafer

    CN113013284A

  • Secondary diffusion selective emitter and preparation method and application thereof

    CN113571602A