Semiconductor processing equipment and semiconductor processing system

Abstract

The present invention relates to A semiconductor processing apparatus includes a lower cavity having a first support area for supporting a wafer, an upper cavity having a second support area, a temperature control module attached close to the upper cavity and / or the lower cavity, and a first passage formed in an edge area of ​​the first support area or the second support area. When the upper cavity and the lower cavity are combined, a wafer is placed between the first support area and the second support area. The temperature control module adjusts its own temperature to adjust the temperature of the upper cavity and / or the lower cavity. A first space is formed by the first passage, and one or more chemical fluids flow in the first space to etch the edge area of ​​the wafer. The temperature control module adjusts the temperature of the upper cavity and / or the lower cavity to adjust the etch width of the wafer edge. The present invention thus allows fine adjustment of the etch width of the wafer edge.

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