Bias-type rotating pedestal

Abstract

Embodiments disclosed herein include an electrostatic chuck. In embodiments, the electrostatic chuck includes a pedestal having a support surface for supporting a substrate and a second surface opposite the support surface, and a chucking electrode within the pedestal. In embodiments, a bias electrode is within the pedestal, and a heating element is within the pedestal. In embodiments, the electrostatic chuck further includes a shaft coupled to the second surface of the pedestal, and a rotation assembly coupled to the shaft and configured to rotate the shaft and the pedestal.

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims priority to U.S. Patent Application No. 17 / 685,272, filed March 2, 2022, the entire contents of which are incorporated herein by reference.

[0002] FIELD OF THE DISCLOSURE

[0002] Embodiments relate to the field of semiconductor manufacturing, and more particularly to semiconductor processing tools having a rotating pedestal. [Background technology]

[0003] Rotating pedestals are used in semiconductor manufacturing environments to provide tools that enable highly uniform results on substrates processed in the tool. In existing tools, the rotating pedestal may include an electrostatic chucking electrode and a bias electrode. The bias electrode may be electrically coupled to a fixed plate having a wireless configuration. For example, the fixed plate may be capacitively coupled to the bias electrode. Thus, any direct electrical coupling via a conductor is omitted and the bias electrode is free to rotate with the pedestal.

[0004] Additionally, the electrostatic chucking electrode may be powered by current passing through a bearing assembly of the rotating pedestal, facilitating powering the chucking electrode while the pedestal is rotating. For example, power may be drawn from a DC power supply and passed to the bearing assembly. The current passes through the bearing assembly and then passes to the chucking electrode via a chucking power supply line located inside the shaft below the pedestal. Summary of the Invention

[0005] Embodiments disclosed herein include an electrostatic chuck. In an embodiment, the electrostatic chuck comprises a pedestal having a support surface for supporting a substrate and a second surface opposite the support surface, and a chucking electrode in the pedestal. In an embodiment, a bias electrode is in the pedestal and a heating element is in the pedestal. In an embodiment, the electrostatic chuck further comprises a shaft coupled to the second surface of the pedestal and a rotation assembly coupled to the shaft to rotate the shaft and the pedestal.

[0006] The embodiment may further include a semiconductor tool. In an embodiment, the semiconductor tool comprises a chamber and a first shaft that passes through the chamber, with a baffle between the first shaft and the chamber sealing the chamber. In an embodiment, the semiconductor tool further comprises a second shaft within the first shaft and a pedestal on a first end of the second shaft within the chamber. In an embodiment, the semiconductor tool further comprises a rotation assembly coupled to the second shaft and configured to rotate the second shaft and the pedestal relative to the first shaft.

[0007] The embodiment may further include a semiconductor tool comprising a chamber and a pedestal within the chamber. In an embodiment, the pedestal comprises a chucking electrode, a bias electrode, and a heating element. In an embodiment, a first shaft passes through a bottom of the chamber and a second shaft passes through the bottom of the chamber and within the first shaft. In an embodiment, the pedestal is coupled to the second shaft. In an embodiment, a baffle is between a portion of the first shaft and the chamber to seal the chamber. In an embodiment, a vacuum feedthrough is at an end of the second shaft opposite the pedestal, and a radio frequency (RF) rotary feedthrough is below the vacuum feedthrough. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view of a semiconductor processing tool according to an embodiment. [Diagram 2]1 is a cross-sectional view of a semiconductor processing tool more clearly illustrating components of a rotating pedestal according to an embodiment. [Diagram 3] 1A is a cross-sectional view of an RF rotary feedthrough according to an embodiment, and FIG. 1B is a plan view of the RF rotary feedthrough according to an embodiment. [Figure 4] 1 is a cross-sectional view of a semiconductor processing tool showing electrical wiring through a central shaft in a pedestal to components according to an embodiment. [Diagram 5] FIG. 1 is a block diagram of an example computer system that may be used with a processing tool according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] The system described herein includes a semiconductor tool that includes a rotating pedestal. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to one of ordinary skill in the art that the embodiments may be practiced without these specific details. In other instances, well-known aspects have not been described in detail in order not to unnecessarily obscure the embodiments. Furthermore, it should be understood that the various embodiments illustrated in the accompanying drawings are illustrative representations and are not necessarily drawn to scale.

[0010] As mentioned above, rotating pedestal architectures currently exist in some semiconductor processing tools. However, the components that are powered within the pedestal are limited. For example, capacitive coupling can be used to power the bias electrodes, and current can be passed over the bearings to power the electrostatic chucking electrodes. However, the high current components of the semiconductor processing tools are not compatible with capacitive coupling or power passing over the bearings. For example, heating elements (lamps, resistive heating elements, etc.) require high currents to provide the necessary heat to the system.

[0011] In existing processing tools, the heating element is fixed relative to the rotating pedestal. Therefore, the current supplied to the heating element does not need to pass through the joint between the stationary and rotating components. However, in some processing tools, it may be desirable to incorporate the heating element within the pedestal. For example, in an ultra-low vacuum chamber, it may be necessary to move the heating element into the pedestal to mitigate the possibility of plasma ignition below the pedestal. Thus, the heating element rotates with the pedestal and requires an electrical connection that can be maintained across the joint between the stationary and rotating components.

[0012] Existing solutions (e.g., passing a current over a bearing or capacitively coupling two plates) are not suitable for such high current applications. Accordingly, embodiments disclosed herein include a slip ring architecture that allows high currents to pass between stationary and rotating components. In some embodiments, multiple slip ring structures can be stacked on top of each other to provide power to multiple components (electrostatic chucking electrodes, bias electrodes, heating elements, etc.). In certain embodiments, seven or more slip ring structures can be used.

[0013] Reference is now made to Figure 1, which illustrates a schematic cross-sectional view of a plasma processing chamber according to some embodiments of the present disclosure. In some embodiments, the plasma processing chamber is a physical vapor deposition (PVD) processing chamber. However, other types of processing chambers (e.g., chemical vapor deposition (CVD) chambers, atomic layer deposition (ALD) chambers, etc.) can also be used or modified for use with the inventive electrostatic chuck embodiments described herein.

[0014] The chamber 100 is a vacuum chamber suitably adapted to maintain a subatmospheric pressure within a chamber interior region 120 during substrate processing. The chamber 100 includes a chamber body 106 covered by a lid 104 that encloses a processing region 119 located in the upper half of the chamber interior region 120. The chamber 100 may also include one or more shields 105 that enclose various chamber components to prevent undesired reactions between the components and the ionized process materials. The chamber body 106 and the lid 104 may be made of a metal, such as aluminum. The chamber body 106 may be grounded via a bond to ground 115.

[0015] A substrate support 124 is disposed within the chamber interior region 120 and supports and holds a substrate S, such as, for example, a semiconductor wafer, or other such substrate that may be electrostatically held. The substrate support 124 may generally include an electrostatic chuck 150 and a hollow support shaft 112 for supporting the electrostatic chuck 150. The hollow support shaft 112 provides a conduit for supplying, for example, process gases, fluids, coolants, power, etc., to the electrostatic chuck 150.

[0016] In some embodiments, the hollow support shaft 112 is coupled to a lift mechanism 113 that provides vertical movement of the electrostatic chuck 150 between an upper processing position (shown in FIG. 1 ) and a lower transfer position (not shown). A bellows assembly 110 is disposed about the hollow support shaft 112 and is coupled between the electrostatic chuck 150 and a bottom surface 126 of the chamber 100 to provide a flexible seal that allows vertical movement of the electrostatic chuck 150 while preventing loss of vacuum from within the chamber 100. The bellows assembly 110 also includes a lower bellows flange 164 in contact with an O-ring 165 or other suitable sealing element that contacts the bottom surface 126 to help prevent loss of chamber vacuum.

[0017] The hollow support shaft 112 provides conduits for coupling the fluid source 142, the gas source 141, the chucking power supply 140, and RF sources (e.g., RF plasma power supply 170 and RF bias power supply 117) to the electrostatic chuck 150. In some embodiments, the RF plasma power supply 170 and the RF bias power supply 117 are coupled to the electrostatic chuck through respective RF match networks (only RF match network 116 is shown).

[0018] The substrate lift 130 may include lift pins 109 attached to a platform 108 connected to a shaft 111 that is coupled to a second lift mechanism 132 for raising and lowering the substrate lift 130 so that a substrate "S" may be placed on or removed from the electrostatic chuck 150. The electrostatic chuck 150 includes through holes for receiving the lift pins 109. A bellows assembly 131 is coupled between the substrate lift 130 and the bottom surface 126 and provides a flexible seal to maintain chamber vacuum during vertical movement of the substrate lift 130.

[0019] The chamber 100 is coupled to and in fluid communication with a vacuum system 114 that includes a throttle valve (not shown) and a vacuum pump (not shown) used to evacuate the chamber 100. The pressure within the chamber 100 can be adjusted by adjusting the throttle valve and / or the vacuum pump. The chamber 100 is also coupled to and in fluid communication with a process gas source 118 that can supply one or more process gases to the chamber 100 for processing a substrate disposed therein.

[0020] In an operation, for example, a plasma 102 may be generated in the chamber interior region 120 to perform one or more processes. The plasma 102 may be generated by coupling power from a plasma power source (e.g., RF plasma power source 170) to a process gas through one or more electrodes proximate to or within the chamber interior region 120 to ignite the process gas and generate the plasma 102. In some embodiments, a bias power source (e.g., RF bias power source 117) may also provide bias power to one or more electrodes (described below) disposed within the electrostatic chuck 150 to attract ions from the plasma toward the substrate S.

[0021] In some embodiments, for example when the chamber 100 is a PVD chamber, a target 166 containing a source material to be deposited on the substrate S may be positioned above the substrate within the chamber interior region 120. The target 166 may be supported by a grounded conductive portion of the chamber 100, for example an aluminum adapter through a dielectric isolator. In other embodiments, the chamber 100 may include multiple targets in a multi-cathode arrangement for depositing layers of different materials using the same chamber.

[0022] A controllable DC power supply 168 may be coupled to the chamber 100 to apply a negative voltage, or bias, to the target 166. An RF bias power supply 117 may be coupled to the substrate support 124 to induce a negative DC bias on the substrate S. Additionally, in some embodiments, a negative DC self-bias may be formed on the substrate S during processing. In some embodiments, an RF plasma power supply 170 may also be coupled to the chamber 100 to apply RF power to the target 166 to facilitate control of the radial distribution of deposition rate on the substrate S. In the process, ions in the plasma 102 generated in the chamber 100 react with the source material from the target 166. This reaction causes the target 166 to release atoms of the source material, which are directed toward the substrate S, thereby depositing the material.

[0023] Reference is now made to Figure 2, which is a cross-sectional view of the chamber 200 illustrating the pedestal 224 and associated components in greater detail according to an embodiment. As shown, the pedestal 224 can support a substrate S within the chamber 200. The pedestal 224 can include one or more subcomponents (not shown for simplicity). For example, the pedestal 224 can include one or more electrostatic chucking electrodes, bias electrodes, and / or heating elements.

[0024] The interior region 220 of the chamber 200 can be configured to be maintained at or below atmospheric pressure using a throttle valve, vacuum pump, etc., which are omitted from FIG. 2 for simplicity. In an embodiment, the pressure in the interior region 220 can be about 100 Torr or less. In a particular embodiment, the pressure in the interior region 220 can be about 3 Torr to about 100 Torr. In an embodiment, the first shaft 212 can extend through the bottom of the chamber 200. To keep the chamber 200 sealed, a baffle structure 210 can be provided between the first shaft 212 and the chamber 200. That is, the region 221 between the outside of the baffle structure 210 and the first shaft 212 is at atmospheric pressure. The baffle structure 210 allows for the vertical displacement of the pedestal 224 by a lift mechanism as described in more detail above.

[0025] In an embodiment, the first shaft 212 may be referred to as a stationary shaft 212. That is, the first shaft 212 may remain stationary while the second shaft 270 rotates within the first shaft 212. The rotation of the second shaft 270 relative to the first shaft 212 may be assisted by the presence of one or more bearings 272, 273, and 274 between the first shaft 212 and the second shaft 270. In certain embodiments, the bearing 274 may be a cross roller bearing 274. In an embodiment, the region 222 between the exterior of the second shaft 270 and the interior of the first shaft 212 may be held at a subatmospheric pressure (which may be referred to as a vacuum pressure). In certain embodiments, the region 222 may have a pressure of less than 10 Torr. For example, the region 222 may have a pressure of about 1 Torr to about 10 Torr.

[0026] In an embodiment, the second shaft 270 can be rotated by any suitable drive architecture. In the particular embodiment shown in FIG. 2, the drive architecture is a magnetic architecture. As shown, one or more inner magnets 271 A is attached to the second shaft 270 and the outer magnet 271 B is provided on the outside of the first shaft 212. In the embodiment, the outer magnet 271 B The outer magnet 271 can be rotated about the first shaft 212 by any suitable mechanism. B The outer magnet 271 may be driven by a belt drive or a motor (not shown). B The rotation of the inner magnet 271 A , driving the second shaft 270 and the pedestal 224. A is disposed within the first shaft 212, so that the inner magnet 271 A is in vacuum pressure, and the outer magnet 271 B Since the outer magnet 271 is disposed on the outside of the first shaft 212, B However, the inner magnet 271 is at atmospheric pressure. A and outer magnet 271 Bmay alternatively be disposed within the first shaft 212.

[0027] In embodiments, multiple wires 276 may be threaded through the vacuum feedthrough 275. Although a single wire 276 is illustrated within the second shaft 270, it will be understood that more than one wire 276 may be threaded through the vacuum feedthrough 275 and into the second shaft 270. The interior region 223 of the second shaft 270 may be at atmospheric pressure in some embodiments. In some embodiments, the interior region 223 may be at a pressure greater than atmospheric pressure. The greater pressure (e.g., greater than atmospheric pressure) prevents collapse within the interior region 223.

[0028] In an embodiment, the wires 275 may extend from the RF rotary feedthrough 280. The RF rotary feedthrough 280 may include a stator 281 and a rotor 282. That is, the stator 281 remains stationary (coupled to the outer first shaft 212) and the rotor 282 is free to rotate with the inner second shaft 270. The RF rotary feedthrough 280 may have any number of electrical paths that allow power to propagate across the junction between the stationary component (i.e., the stator 281) and the rotating component (i.e., the rotor 282). The configuration of the RF rotary feedthrough 280 allows large currents to pass across the boundary between the rotating and stationary components. Thus, one or more wires 275 may be used to power a heating element (not shown) in the pedestal 224. In some implementations, the RF rotary feedthrough 280 may have a slip-ring type structure. Contacts 283 may be provided on the bottom surface of the stator 281. Although referred to as an RF rotary feedthrough, it should be understood that other currents from 0 GHz to 100 GHz can be propagated through the RF rotary feedthrough 280 .

[0029] Reference is now made to Figure 3A, which illustrates a cross-sectional view of an RF rotary feedthrough 380 according to an embodiment. As shown, a rotor 382 is disposed within the center of a stator 381. The rotor 382 may include a number of conductive layers 384. The layers 384 may be electrically isolated from one another by insulating layers 387. Although not shown for simplicity, each of the conductive layers 384 may be coupled to a top surface of the rotor 382 by a via that extends through the thickness of the rotor 382.

[0030] Similarly, stator 381 may include multiple conductive layers 385. The number of conductive layers 385 may be equal to the number of conductive layers 384 of rotor 382. Layers 385 may be electrically insulated from one another by insulating layers 387. In an embodiment, conductive layers 384 may be coupled to a bottom surface of stator 381 by vias (not shown) that extend through the thickness of stator 381.

[0031] A number of electrically conductive connector rings 386 may be provided to provide a connection between the stationary layer 385 and the rotating layer 384. For example, a copper ring or the like may be fixed between an end of layer 385 and an end of layer 384. As the central rotor 382 rotates, the connector rings 386 rotate and maintain an electrical connection between the stator 381 and the rotor 382. In the illustrated embodiment, a set of seven connector rings 386 are shown, one for each of layers 384 and 385. However, it should be understood that the RF rotary feedthrough may include any number of connector rings 386 (e.g., one or more rings 386).

[0032] The structure of the connector ring 386 can be more clearly illustrated in FIG. 3B. As shown, a layer of the stator 381 and a layer of the rotor 382 are provided. The stator 381 forms a ring, which may be a disk, around the rotor 382. In an embodiment, the connector ring 386 can be provided between an outer edge of the disk of the rotor 382 and an inner edge of the ring of the stator 381. In some embodiments, the distance between the edge of the disk and the inner surface of the ring may be substantially equal to the diameter of the connector ring 386. However, in some embodiments, the diameter of the connector ring 386 may be slightly larger than the distance between the edge of the disk and the inner surface of the ring. Thus, the connector ring 386 may be slightly deformed and not round. When the disk of the rotor 382 rotates, the connector ring 386 rotates in the opposite direction. For example, when the disk rotates clockwise, the connector ring 386 rotates counterclockwise.

[0033] 3A and 3B show a general example of an RF rotary feedthrough according to an embodiment, however, it should be understood that many different configurations of RF rotary feedthroughs may be used to fabricate semiconductor processing tools as described herein.

[0034] Reference is now made to FIG. 4, which illustrates a schematic cross-sectional view of a chamber 400 according to an embodiment. The illustrated embodiment simplifies the complexity to more clearly illustrate the electrical components of the pedestal 424. As illustrated, the pedestal 424 may be coupled to an inner shaft 470. An outer shaft 412 may surround the inner shaft 470. The outer shaft 412 may be a stationary component that does not rotate. However, in some embodiments, the outer shaft 412 may be vertically displaceable. Thus, a bellows assembly 410 may connect the outer shaft 412 to the chamber 400 to maintain a vacuum seal of the chamber 400.

[0035] As shown in FIG. 4, a rotating assembly can be provided along the length of shafts 412 and 470. Similar to the embodiment described in more detail above, one or more inner magnets 471 can be provided. A may be mechanically coupled to the inner shaft 470. One or more outer magnets 471 B The outer magnet 471 may be disposed around the outer shaft 412. B When the magnet is rotated (e.g., by a drive belt), the inner magnet 471 A This drives the rotation of the inner shaft 470 and the pedestal 424.

[0036] As shown in FIG. 4, a number of conductive wires 495 extend through the center of the inner shaft 470. A ~495 C The wire 495 may be coupled to an RF rotation feedthrough (not shown in FIG. 4) that allows free rotation of the wire 495 even though it is ultimately coupled to a fixed component. In an embodiment, the first wire 495 A may be coupled to a heating element 493 in the pedestal 424. The heating element 493 may be a resistive heating feature, a lamp, or the like. In an embodiment, the heating element 493 may include multiple zones (e.g., an inner zone and an outer zone). In the above embodiment, multiple wires 495 may be connected to the heating element 493 to independently control the different zones. In an embodiment, a second wire 495 B may be coupled to a bias electrode 492. In an embodiment, the bias electrode 492 allows the pedestal (and the substrate) to be biased to attract ions, etc. in the plasma. In an embodiment, a third wire 495 C may be coupled to electrostatic chucking electrode 491. In an embodiment, electrostatic chucking electrode 491 may be a single electrode or may include two or more electrodes (e.g., to enable a bipolar chucking architecture).

[0037] Although three wires 495 are illustrated, it should be understood that any number of wires 495 may be used. The number of wires 495 may correspond to the number of connector rings in the RF rotary feedthrough. In a particular embodiment, seven wires 495 are fed through the inner shaft 470. Four of the seven wires 495 may be used for a heating element (e.g., to support two zones), a fifth wire 495 may be used for an electrostatic chucking electrode 491, a sixth wire 495 may be used to provide RF power to a bias electrode 492, and a seventh wire 495 may be used to probe the backside of the substrate to determine the center tap of the electrostatic chucking power supply.

[0038] Reference is now made to FIG. 5, which illustrates a block diagram of an exemplary computer system 500 of a processing tool according to an embodiment. In an embodiment, the computer system 500 is coupled to the processing tool and controls processing within the processing tool. The computer system 500 may be connected (e.g., networked) to other machines in a local area network (LAN), an intranet, an extranet, or the Internet. The computer system 500 may operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 500 may be a personal computer (PC), a tablet PC, a set-top box (STB), a personal digital assistant (PDA), a mobile phone, a web appliance, a server, a network router, a switch or bridge, or any machine capable of executing a set of instructions (sequential or otherwise) that specify actions to be performed by the machine. Furthermore, although only a single machine is illustrated for the computer system 500, the term "machine" shall be deemed to include any collection of machines (e.g., computers) that individually or jointly execute a set (or sets) of instructions to perform any one or more of the methodologies described herein.

[0039] The computer system 500 may include a computer program product, or software 522, having a non-transitory machine-readable medium having stored thereon instructions that can be used to program the computer system 500 (or other electronic devices) to perform processes according to embodiments. A machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, machine-readable (e.g., computer-readable) media includes machine (e.g., computer) readable storage media (e.g., read-only memory ("ROM"), random access memory ("RAM"), magnetic disk storage media, optical storage media, flash memory devices, etc.), machine (e.g., computer) readable transmission media (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared, digital, etc.), etc.), and the like.

[0040] In an embodiment, computer system 500 includes a system processor 502, a main memory 504 (e.g., read only memory (ROM), flash memory, dynamic random access memory (DRAM) such as synchronous DRAM (SDRAM) or Rambus DRAM (RDRAM), etc.), a static memory 506 (e.g., flash memory, static random access memory (SRAM), etc.), and a secondary memory 518 (e.g., a data storage device), which communicate with each other via a bus 530.

[0041] The system processor 502 represents one or more general purpose processing devices, such as a microsystem processor, a central processing unit, etc. More specifically, the system processor may be a complex instruction set computing (CISC) microsystem processor, a reduced instruction set computing (RISC) microsystem processor, a very long instruction word (VLIW) microsystem processor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 502 may also be one or more special purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, etc. The system processor 502 is configured to execute processing logic 526 for performing the operations described herein.

[0042] The computer system 500 may further include a system network interface device 508 for communicating with other devices or machines. The computer system 500 may also include a video display device 510 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 512 (e.g., a keyboard), a cursor control device 514 (e.g., a mouse), and a signal generating device 516 (e.g., a speaker).

[0043] The secondary memory 518 may include a machine-accessible storage medium 532 (more specifically, a computer-readable storage medium) on which one or more sets of instructions (e.g., software 522) embodying any one or more of the methodologies or functions described herein are stored. The software 522 may also reside, completely or at least partially, within the main memory 504 and / or within the system processor 502 during its execution by the computer system 500, with the main memory 504 and the system processor 502 also constituting machine-readable storage media. The software 522 may further be transmitted or received over the network 520 via a system network interface device 508. In an embodiment, the network interface device 508 may operate using RF, optical, acoustic, or inductive coupling.

[0044] Although the machine-accessible storage medium 532 is illustrated as a single medium in the exemplary embodiment, the term "machine-readable storage medium" should be interpreted to include a single medium or multiple media (e.g., a centralized or distributed database and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be interpreted to include any medium capable of storing or encoding a set of instructions for execution by a machine, causing the machine to perform any one or more methodologies. Thus, the term "machine-readable storage medium" is intended to include, but is not limited to, solid-state memories, optical media, and magnetic media.

[0045] In the foregoing specification, certain exemplary embodiments have been described. It will be apparent that various modifications may be made thereto without departing from the scope of the following claims. The specification and drawings are therefore to be regarded in an illustrative rather than a restrictive sense.

Claims

1. 1. An electrostatic chuck comprising: a pedestal having a support surface for supporting a substrate and a second surface opposite the support surface; a chucking electrode within the pedestal; a bias electrode within the pedestal; a heating element within the pedestal; a shaft coupled to a second surface of the pedestal; a rotation assembly coupled to the shaft for rotating the shaft and the pedestal; The electrostatic chuck comprises:

2. 10. The electrostatic chuck of claim 1, wherein the rotating assembly is a magnetically driven rotating assembly.

3. The electrostatic chuck of claim 1 , wherein the shaft rotates the pedestal, the chucking electrode, the bias electrode, and a heating device.

4. The electrostatic chuck of claim 1 , wherein the heating element comprises a resistive heating element.

5. The electrostatic chuck of claim 1 , wherein the heating element comprises a plurality of lamps.

6. The electrostatic chuck of claim 1 , wherein the electrostatic chuck is at least partially within a chamber.

7. 7. The electrostatic chuck of claim 6, wherein the shaft is within a non-rotating outer shaft.

8. 8. The electrostatic chuck of claim 7, wherein an interior of the shaft is configured to be at atmospheric pressure and a region between the shaft and the interior of the outer shaft is configured to be at vacuum pressure.

9. a lifting unit coupled to the shaft and configured to vertically displace the pedestal; 10. The electrostatic chuck of claim 1, further comprising:

10. 10. The electrostatic chuck of claim 1, wherein seven wires extend on said shaft and contact said chucking electrode, said bias electrode, and said heating element.

11. 11. The electrostatic chuck of claim 10, wherein the wire is coupled to a slip ring connector to enable rotation of the wire.

12. 1. A semiconductor tool comprising: A chamber; a first shaft extending through the chamber, a baffle between the first shaft and the chamber sealing the chamber; a second shaft within the first shaft; a pedestal on a first end of the second shaft within the chamber; a rotation assembly coupled to the second shaft for rotating the second shaft and the pedestal relative to the first shaft; A semiconductor tool comprising:

13. The semiconductor tool of claim 12 , wherein the rotation assembly is a magnetic drive assembly.

14. The semiconductor tool of claim 13 , wherein a first magnet is attached to a second shaft, and a second magnet is magnetically coupled to the first magnet, the second magnet being exterior to the first shaft.

15. The semiconductor tool of claim 12 further comprising a rotary electrical feedthrough beneath said first shaft and said second shaft.

16. The semiconductor tool of claim 15 , wherein the rotary electrical feedthrough is a slip ring feedthrough.

17. The semiconductor tool of claim 15 , wherein a conductive wire passes from the rotating electrical feedthrough to a component of a pedestal.

18. The semiconductor tool of claim 17 , wherein the pedestal components include a chucking electrode, a bias electrode, and a heating element.

19. 1. A semiconductor tool comprising: A chamber; a pedestal within the chamber, the pedestal including a chucking electrode, a bias electrode, and a heating element; a first shaft extending through a bottom of the chamber; a second shaft extending through a bottom of the chamber and within the first shaft, the pedestal being coupled to the second shaft; a baffle between a portion of the first shaft and the chamber to seal the chamber; a vacuum feedthrough at an end of the second shaft opposite the pedestal; a radio frequency (RF) rotary feedthrough below the vacuum feedthrough; and A semiconductor tool comprising:

20. The semiconductor tool of claim 19 , wherein the RF rotary feedthrough is a slip ring feedthrough.

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