Substrate Processing Equipment

Abstract

The present invention relates to a substrate processing apparatus including a chamber, a substrate support portion for supporting a substrate inside the chamber, a gas injection portion including a plurality of first injection holes for injecting a first process gas toward the substrate and a gas inlet portion communicating with the first injection holes for the first process gas to flow in, a gas supply portion including a gas supply connection portion connected to the gas inlet portion and supplying the first process gas to the gas injection portion, and a sealing portion for maintaining airtightness between the gas inlet portion and the gas supply connection portion.

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus for performing a processing step, such as a deposition step, on a substrate. [Background technology]

[0002] Generally, in order to manufacture semiconductor devices, display devices, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. To this end, substrate processing processes are performed, such as a deposition process for depositing a thin film of a specific material on the substrate, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for removing the thin film at the selectively exposed portions to form a pattern. Through such substrate processing processes, a thin film can be manufactured on the substrate.

[0003] 1 and 2 are schematic cross-sectional side views of a portion of a substrate processing apparatus according to the prior art.

[0004] Referring to Figures 1 and 2, a conventional substrate processing apparatus 100 includes a gas injection section 110 that injects gas toward a substrate, a gas block 120 that supplies gas to the gas injection section 110, and a sealing section 130 that seals the space between the gas injection section 110 and the gas block 120.

[0005] The gas injection unit 110 includes an injection hole 111 for injecting gas toward a substrate. The gas block 120 includes an exhaust hole 121 for exhausting the gas supplied to the injection hole 111. The sealing unit 130 is disposed between an upper surface of the gas injection unit 110 and a lower surface of the gas block 120.

[0006] As shown in FIG. 1, when the upper surface of the gas injection part 110 and the lower surface of the gas block 120 are in contact with each other, the sealing part 130 is arranged to surround each of the injection hole 111 and the exhaust hole 121, thereby preventing gas leakage.

[0007] However, if the gas injection unit 110 is deformed due to heat generated during a processing process on the substrate, or if the gas injection unit 110 is deformed, such as sagging, the upper surface of the gas injection unit 110 and the lower surface of the gas block 120 may move relatively apart from each other as shown in Fig. 2. As a result, the sealing unit 130 cannot surround the injection hole 111 and the exhaust hole 121, respectively, and cannot prevent gas leakage.

[0008] Therefore, the conventional substrate processing apparatus 100 has a problem that the quality of the substrate processed is deteriorated due to the generation of particles due to the gas leakage, and also has a problem that the process cost is increased due to the increase in the amount of gas wasted due to the gas leakage. Summary of the Invention [Problem to be solved by the invention]

[0009] The present invention has been devised to solve the above problems, and aims to provide a substrate processing apparatus that can prevent a reduction in sealing force to prevent gas leakage due to heat generated during a processing process on a substrate, sagging due to its own weight, etc.

[0010] SUMMARY OF THE PRESENTLY PREFERRED EMBODIMENTS The present invention provides a substrate processing apparatus capable of reducing process costs by reducing gas leakage and reducing the amount of gas wasted. [Means for solving the problem]

[0011] In order to solve the above-mentioned problems, the present invention can include the following configurations.

[0012] The substrate processing apparatus according to the present invention includes a chamber, a substrate support section for supporting a substrate inside the chamber, a gas injection section including a plurality of first injection holes for injecting a first process gas toward the substrate and a gas inlet section communicating with the first injection holes and through which the first process gas flows, a gas supply section including a gas supply connection section connected to the gas inlet section and for supplying the first process gas to the gas injection section, and a sealing section for maintaining airtightness between the gas inlet section and the gas supply connection section.

[0013] In the substrate processing apparatus according to the present invention, the gas inlet may include an insert part inserted into the gas supply connection part, and the sealing part may be disposed outside the insert part to maintain airtightness between the gas inlet and the gas supply connection part.

[0014] In the substrate processing apparatus according to the present invention, the gas supply connection part may include an insert part inserted into the gas inlet part, and the sealing part may be disposed outside the insert part to maintain airtightness between the gas inlet part and the gas supply connection part. Effect of the Invention

[0015] According to the present invention, the following effects can be obtained.

[0016] The present invention is embodied to be capable of preventing leakage of process gas between the gas inlet and the gas supply connection by using a sealing part even if a relative movement occurs between the gas injection part and the gas supply connection due to deformation, etc. Therefore, the present invention can reduce particles generated due to leakage of process gas, and improve the quality of the substrate after the processing process. In addition, the present invention can reduce the amount of gas wasted due to leakage of process gas, and thus reduce the processing cost. [Brief description of the drawings]

[0017] [Figure 1] 1 is a schematic cross-sectional side view of a portion of a substrate processing apparatus according to the prior art; [Diagram 2] 1 is a schematic cross-sectional side view of a portion of a substrate processing apparatus according to the prior art; [Diagram 3] 1 is a schematic configuration diagram of a substrate processing apparatus according to the present invention; [Figure 4] 2 is a schematic perspective view of a substrate support portion of the substrate processing apparatus according to the present invention; FIG. [Diagram 5] 5 is a schematic cross-sectional side view of a gas supply unit, a gas injection unit, and a sealing unit taken along line II in FIG. 4. [Figure 6] 5 is a schematic cross-sectional side view of a gas supply unit, a gas injection unit, and a sealing unit taken along line II in FIG. 4. [Figure 7] 7 is a schematic plan view of the gas inlet portion and the sealing portion taken along line II-II in FIG. 6. [Figure 8] 5 is a schematic configuration diagram of a substrate processing apparatus according to the present invention shown along line II in FIG. 4. [Figure 9] 5 is a schematic cross-sectional side view of a gas supply unit, a gas injection unit, a sealing unit, and a lid taken along line II in FIG. 4. [Figure 10] 10 is a schematic plan view of the gas supply connection portion taken along line III-III in FIG. 9. [Figure 11] 10 is a schematic enlarged cross-sectional side view of part A in FIG. 9. [Figure 12] 5 is a schematic cross-sectional side view of a gas supply unit, a gas injection unit, a sealing unit, an outer sealing unit, and an inner sealing unit, taken along line II in FIG. 4. [Figure 13] 5 is a schematic cross-sectional side view showing a state in which a fastening part connects a gas supply part and a gas injection part with reference to line II in FIG. 4. [Figure 14] 5 is a schematic side cross-sectional view showing an embodiment in which a gas supply connector is inserted into a gas inlet port taken along line II in FIG. 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, an embodiment of the substrate processing apparatus according to the present invention will be described in detail with reference to the accompanying drawings.

[0019] 3 and 4, the substrate processing apparatus 1 according to the present invention performs a processing process on a substrate (S). The substrate (S) may be a silicon substrate, a glass substrate, a metal substrate, or the like. The substrate processing apparatus 1 according to the present invention can perform a deposition process for depositing a thin film on the substrate (S), an etching process for removing a part of the thin film deposited on the substrate (S), and the like. Hereinafter, an embodiment in which the substrate processing apparatus 1 according to the present invention performs the deposition process will be described, but it will be obvious to those skilled in the art to which the present invention pertains that embodiments in which the substrate processing apparatus 1 according to the present invention performs other processing processes similar to the etching process can be derived from this.

[0020] The substrate processing apparatus 1 according to the present invention may include a chamber 2 , a substrate support unit 3 , a gas supply unit 4 , a gas injection unit 5 , and a sealing unit 6 .

[0021] <Chamber> 3 and 4, the chamber 2 provides a processing space 21. In the processing space 21, processing processes such as a deposition process and an etching process can be performed on the substrate (S). The processing space 21 can be disposed inside the chamber 2. The chamber 2 can be coupled with an exhaust port (not shown) for exhausting gas from the processing space 21. The substrate support unit 3 and the gas injection unit 5 can be disposed inside the chamber 2.

[0022] <Substrate support part> 3 and 4, the substrate support 3 supports the substrate (S). The substrate support 3 can support one substrate (S) or multiple substrates (S). When multiple substrates (S) are supported on the substrate support 3, a processing process can be performed on the multiple substrates (S) at one time. The substrate support 3 can be coupled to the chamber 2. The substrate support 3 can be disposed inside the chamber 2.

[0023] <Gas supply section> 3 to 5, the gas supply unit 4 is for supplying a first process gas to the gas injection unit 5. The first process gas may be one type of gas or a mixed gas of a plurality of types of gases. The first process gas may be a source gas or a reactant gas. The first process gas may be a mixed gas of a source gas and a reactant gas. The gas supply unit 4 may be disposed above the gas injection unit 5. The gas supply unit 4 may be inserted into and coupled to a lid 22 (shown in FIG. 9) covering the upper part of the chamber 2.

[0024] The gas supply 4 may include a gas supply connection 41 .

[0025] The gas supply connection part 41 is for receiving the first process gas from the outside. The gas supply connection part 41 may be connected to a gas storage part (not shown) disposed outside. The gas storage part stores the first process gas. The gas supply connection part 41 may receive the first process gas from the gas storage part. The gas supply connection part 41 may be connected to the gas storage part via a pipe, a hose, etc. The gas supply connection part 41 may also be directly connected to the gas storage part.

[0026] The gas supply connection part 41 may include a first gas supply hole 410. The first gas supply hole 410 receives the first process gas. The first gas supply hole 410 may receive the first process gas from the outside. The first gas supply hole 410 may be connected to the gas storage part via a pipe, a hose, etc. The first gas supply hole 410 may be directly connected to the gas storage part. The first gas supply hole 410 may be formed by penetrating the gas supply connection part 41.

[0027] The gas supply connection part 41 may be connected to the gas injection part 5. One side of the gas supply connection part 41 may be connected to the gas injection part 5, and the other side of the gas supply connection part 41 may be connected to the gas storage part. The gas supply connection part 41 may supply the first process gas supplied from the gas storage part to the gas injection part 5. Thus, the first process gas is supplied from the gas supply part 4 to the gas injection part 5 and injected onto the substrate (S) through the gas injection part 5.

[0028] The gas supply connection part 41 may include a first gas supply hole 410. The first gas supply hole 410 is for supplying the first process gas. The first process gas may be supplied from the gas storage part to the first gas supply hole 410, flow along the first gas supply hole 410, and then discharged from the first gas supply hole 410 to be supplied to the gas injection part 5. The first gas supply hole 410 may be formed to penetrate the gas supply connection part 41.

[0029] <Gas injection section> 3 to 5, the gas injection unit 5 injects gas toward the substrate (S). The gas injection unit 5 can be disposed inside the chamber 2. The gas injection unit 5 can be disposed so as to face the substrate support unit 3. The gas injection unit 5 can be disposed above the substrate support unit 3. In this case, the gas injection unit 5 and the substrate support unit 3 can be disposed apart from each other along the vertical direction (Z-axis direction). The processing space 21 can be disposed between the gas injection unit 5 and the substrate support unit 3. The gas injection unit 5 can be coupled to the chamber 2. The gas injection unit 5 can also be coupled to a lid 22 (shown in FIG. 9).

[0030] The gas injection unit 5 may be connected to the gas supply unit 4. In this case, an upper surface of the gas injection unit 5 may be connected to the gas supply unit 4, and a lower surface of the gas injection unit 5 may be disposed to face the substrate support unit 3. In this way, the gas injection unit 5 may inject the first process gas supplied from the gas supply unit 4 toward the substrate support unit 3.

[0031] The gas injection section 5 may include a plurality of first injection holes 50 and a gas inlet section 51 .

[0032] The first injection holes 50 are for injecting the first process gas. The first process gas is injected toward the substrate (S) through the first injection holes 50. The first injection holes 50 may be connected to the gas inlet 51 and may be connected to the gas supply unit 4 through the gas inlet 51. The first injection holes 50 may be formed penetrating a lower surface of the gas injection unit 5. The first injection holes 50 may be disposed at positions spaced apart from each other.

[0033] The gas inlet 51 is for the first process gas to flow in. The gas inlet 51 may be connected to the gas supply unit 4. Thus, the first process gas discharged from the gas supply unit 4 may flow into the gas inlet 51. The first process gas flows from the gas supply unit 4 into the gas inlet 51 and is then sprayed toward the substrate (S) through the first spray hole 50.

[0034] The gas inlet 51 may be inserted into the gas supply connection part 41. Thus, the first process gas discharged from the gas supply connection part 41 may flow into the gas inlet 51. The gas inlet 51 may be connected to the gas supply part 4 to be movable in the vertical direction (Z-axis direction) by being inserted into the gas supply connection part 41.

[0035] The gas inlet portion 51 may include a gas inlet hole 510. The gas inlet hole 510 is for the first process gas to flow in. One side of the gas inlet hole 510 may be disposed to face the first gas supply hole 410. Thus, the first process gas may be discharged from the first gas supply hole 410 and then flow into the gas inlet portion 51 through the gas inlet hole 510. The other side of the gas inlet hole 510 may be disposed to face the first injection hole 50. Thus, the first process gas may be discharged from the gas inlet hole 510 and then flow into the first injection hole 50, and then flow into the substrate (S) through the first injection hole 50. The gas inlet hole 510 may be formed to penetrate the gas inlet portion 51.

[0036] The gas inlet 51 may include an insertion part 511. The insertion part 511 is inserted into the gas supply connection part 41. The insertion part 511 may be formed to protrude toward the gas supply connection part 41. The gas inlet hole 510 may be formed to penetrate the insertion part 511. The insertion part 511 may correspond to an upper part of the gas inlet 51.

[0037] <Sealed part> 3 to 6, the sealing part 6 is for blocking leakage of the first process gas between the gas inlet part 51 and the gas supply connection part 41. The sealing part 6 may be coupled to at least one of the gas inlet part 51 and the gas supply connection part 41. When the insertion part 511 is inserted into the gas supply connection part 41, the sealing part 6 may be disposed outside the insertion part 511. Thus, the sealing part 6 may be disposed to maintain airtightness between the gas inlet part 51 and the gas supply connection part 41 inside the gas supply connection part 41. Therefore, the substrate processing apparatus 1 according to the present invention can achieve the following effects.

[0038] First, the gas injection unit 5 and the gas supply unit 4 may relatively move along the vertical direction (Z-axis direction) due to various reasons, such as thermal deformation of at least one of the gas injection unit 5 and the gas supply unit 4 due to heat generated during a process of processing the substrate (S), or bending of at least one of the gas injection unit 5 and the gas supply unit 4. For example, when bending occurs in the gas injection unit 5, the gas injection unit 5 may relatively move away from the gas supply unit 4 as shown by the dotted arrow in FIG. 6. For example, when the gas supply unit 4 contracts due to cooling, the gas supply unit 4 may relatively move away from the gas injection unit 5 as shown by the dotted arrow in FIG. 6. As a result of the relative movement between the gas injection unit 5 and the gas supply unit 4, a relative movement also occurs between the gas inlet unit 51 and the gas supply connection unit 41.

[0039] Next, even if a relative movement occurs between the gas inlet 51 and the gas supply connection 41, the substrate processing apparatus 1 according to the present invention can maintain airtightness while allowing the relative movement between the gas inlet 51 and the gas supply connection 41 because the sealing part 6 is disposed outside the insertion part 415. Thus, even if a relative movement occurs between the gas injection part 5 and the gas supply connection 41 due to deformation or the like, the substrate processing apparatus 1 according to the present invention can prevent the first process gas from leaking between the gas inlet 51 and the gas supply connection 41 using the sealing part 6. Therefore, the substrate processing apparatus 1 according to the present invention can reduce particles generated due to leakage of the first process gas, thereby improving the quality of the substrate (S) on which the processing process is performed. Furthermore, the substrate processing apparatus 1 according to the present invention can reduce the amount of gas wasted due to leakage of the first process gas, thereby reducing the process cost.

[0040] The sealing part 6 can allow the gas inlet part 51 to move relative to the gas supply connection part 41 while maintaining airtightness between the gas inlet part 51 and the gas supply connection part 41, or can allow the gas supply connection part 41 to move relative to the gas inlet part 51. Thus, the substrate processing apparatus 1 according to the present invention can maintain airtightness between the gas supply connection part 41 and the gas inlet part 51 by using the sealing part 6, regardless of whether the gas supply connection part 41 or the gas inlet part 51 moves.

[0041] A movement range in which the sealing part 6 maintains airtightness while allowing relative movement between the gas inlet 51 and the gas supply connection part 41 may be determined by a length at which the gas inlet 51 is maintained in an inserted state in the gas supply connection part 41. For example, as shown in Fig. 5, the sealing part 6 may maintain airtightness while allowing relative movement between the gas inlet 51 and the gas supply connection part 41 within a movement range until a lower surface height (H1) of the lower surface of the gas supply connection part 41 reaches a height (H2) of the sealing part 6. Within the movement range, the gas supply connection part 41 and the gas inlet 51 may be maintained in contact with the sealing part 6.

[0042] The sealing part 6 may be inserted into the gas supply connection part 41. Thus, the sealing part 6 contacts the gas supply connection part 41 and the gas inlet part 51 inside the gas supply connection part 41, respectively, thereby maintaining airtightness between the gas inlet part 51 and the gas supply connection part 41, which move relatively. In this case, the gas supply connection part 41 may include an insertion groove 411. The insertion groove 411 may be embodied as a groove formed to a certain depth from the lower surface of the gas supply connection part 41. The insertion groove 411 may be formed to be connected to the first gas supply hole 410.

[0043] The insertion part 511 can be inserted into the insertion groove 411. The insertion part 511 can be inserted into the insertion groove 411 to be movable in the vertical direction (Z-axis direction). When the insertion part 511 is provided, the sealing part 6 can contact each of the inner side surface 41a of the gas supply connection part 41 and the outer side surface 511a of the insertion part 511 so as to maintain airtightness between the gas inlet part 51 and the gas supply connection part 41, which move relatively. The inner side surface 41a of the gas supply connection part 41 is an inner surface arranged to face the insertion groove 411. The outer side surface 511a of the insertion part 511 is an outer surface arranged to face the inner side surface 41a of the gas supply connection part 41 when inserted into the insertion groove 411. The sealing unit 6 can maintain airtightness while allowing relative movement between the gas inlet 51 and the gas supply connection unit 41 within a range in which the sealing unit 6 maintains contact with each of the inner surface 41a of the gas supply connection unit 41 and the outer surface 511a of the insertion unit 511. The sealing unit 6 can be coupled to the insertion unit 511 to surround the outer surface 511a of the insertion unit 511.

[0044] An inlet body 512 of the gas inlet 51 may be inserted into the insertion groove 411. The inlet body 512 may be inserted into the insertion groove 411 to be movable in the vertical direction (Z-axis direction). The insertion portion 511 may protrude from an upper surface of the inlet body 512. The horizontal cross-sectional area of ​​the inlet body 512 may be larger than that of the insertion portion 511. The horizontal cross-sectional area is based on a horizontal direction perpendicular to the vertical direction (Z-axis direction). The sealing portion 6 may be coupled to the insertion portion 511 and disposed on the upper side of the inlet body 512. In this case, the upper surface of the inlet body 512 may support the sealing portion 6, thereby limiting the distance that the sealing portion 6 can move downward. Therefore, the sealing portion 6 may be firmly maintained in contact with each of the outer surface 511a of the insertion portion 511 and the inner surface 41a of the gas supply connection portion 41. The gas inlet hole 510 may be formed to penetrate both the inlet body 512 and the insert part 511 .

[0045] In order to increase the distance over which the sealing part 6 is maintained in contact with the inner surface 41a of the gas supply connection part 41, the gas supply connection part 41 may include a cover part 412. The cover part 412 may protrude downward to cover a part of the outer surface of the inlet body 512. The inner surface of the cover part 412 may belong to the inner surface 41a of the gas supply connection part 41. Thus, the length of the inner surface 41a of the gas supply connection part 41 is increased by the length over which the cover part 412 protrudes downward. Therefore, the substrate processing apparatus 1 according to the present invention can increase the length over which the sealing part 6 maintains airtightness while allowing relative movement between the gas inlet part 51 and the gas supply connection part 41 by using the cover part 412.

[0046] 3 to 7, the sealing part 6 may be coupled to the insertion part 511 in an elliptical shape along the outer side surface 511a of the insertion part 511. In this case, the outer side surface 511a of the insertion part 511 may be formed to have an elliptical horizontal cross section. The horizontal cross section is based on the horizontal direction. When the outer side surface 511a of the insertion part 511 is formed to have an elliptical horizontal cross section, the inner side surface 41a of the gas supply connection part 41 may be formed to have an elliptical horizontal cross section. As a result, the substrate processing apparatus 1 according to the present invention can increase the contact area of ​​the sealing part 6 with the outer side surface 511a of the insertion part 511 and the inner side surface 41a of the gas supply connection part 41, and therefore the sealing force using the sealing part 6 can be further strengthened.

[0047] The sealing part 6 may seal between the gas supply connection part 41 and the gas inlet part 51 to prevent leakage of the first process gas flowing from the first gas supply hole 410 to the gas inlet hole 510. The first gas supply hole 410 may be formed to have an elliptical horizontal cross section. The gas inlet hole 510 may be formed to have an elliptical horizontal cross section. Thus, compared with a comparative example in which the first gas supply hole 410 and the gas inlet hole 510 are each formed to have a circular horizontal cross section, the substrate processing apparatus 1 according to the present invention is embodied to increase the flow rate of the first process gas by using the first gas supply hole 410 and the gas inlet hole 510 formed to have an elliptical horizontal cross section. Therefore, the substrate processing apparatus 1 according to the present invention may further improve the efficiency of the processing process using the first process gas. In this case, each of the inner surface 41a of the gas supply connection part 41 and the outer surface 511a of the insertion part 511 may be formed to have an elliptical horizontal cross section. The sealing part 6 may have an elliptical shape along an outer surface 511 a of the insertion part 511 to seal the gap between the gas supply connection part 41 and the gas inlet part 51 .

[0048] Meanwhile, the substrate processing apparatus 1 according to the present invention may be embodied to flow the first and second process gases in a spatially separated manner and then spray them toward the substrate S. To this end, the gas spraying unit 5 and the gas supplying unit 4 may be embodied as follows.

[0049] 3 to 11, the gas ejection unit 5 can include a first gas flow passage 5a and a second gas flow passage 5b.

[0050] The first gas flow passage 5a is for the first process gas to flow. The first process gas is injected to the substrate (S) through the first gas flow passage 5a. The first gas flow passage 5a functions as a flow passage for the first process gas to flow and also functions as an injection port for injecting the first process gas into the processing space 21. The first gas flow passage 5a may be connected to the gas inlet 51 and connected to the gas supply connector 41 through the gas inlet 51. Thus, the first process gas is supplied to the first gas flow passage 5a through the gas supply connector 41 and the gas inlet 51, and can be injected into the processing space 21 through the first gas flow passage 5a. In this case, the first process gas can be supplied to the first gas flow passage 5a through the first gas supply hole 410 and the gas inlet hole 510.

[0051] The second gas passage 5b is a passage through which the second process gas flows. The second process gas and the first process gas may be different gases. For example, one of the first process gas and the second process gas may be a source gas, and the other of the first process gas and the second process gas may be a reaction gas. The second process gas is injected onto the substrate (S) through the second gas passage 5b. The second gas passage 5b may function as a passage through which the second process gas flows and as an injection port for injecting the second process gas into the processing space 21. The second process gas may flow into the second gas passage 5b through a second gas supply hole 42 and a gas exhaust hole 43 of the gas supply unit 4. The second gas supply hole 42 is a passage through which the second process gas is supplied. The second gas supply hole 42 is a passage through which the second process gas is supplied from the gas storage unit. The gas exhaust hole 43 is a passage through which the second process gas is exhausted. The gas exhaust hole 43 may be formed to be connected to the second gas supply hole 42. Thus, the second process gas may be supplied to the second gas passage 5b through the second gas supply hole 42 and the gas exhaust hole 43 and then sprayed into the processing space 21 through the second gas passage 5b.

[0052] The second gas passage 5b and the first gas passage 5a may be arranged to be spatially separated from each other. Thus, the first process gas may be injected into the processing space 21 through the first gas passage 5a without passing through the second gas passage 5b. The second process gas may be injected into the processing space 21 through the second gas passage 5b without passing through the first gas passage 5a. In this case, the first gas supply hole 410 and the gas inlet hole 510 may be formed to be spatially separated from the second gas supply hole 42 and the gas exhaust hole 43. Thus, the first process gas and the second process gas may flow in a state of not being mixed with each other even inside the gas supply unit 4 and be supplied to the first gas passage 5a and the second gas passage 5b, respectively.

[0053] The gas injection section 5 may include an upper plate 52 and a lower plate 53 .

[0054] The upper plate 52 is disposed above the lower plate 53. The upper plate 52 and the lower plate 53 may be disposed spaced apart from each other in the vertical direction (Z-axis direction). Based on the vertical direction (Z-axis direction), the upper plate 52 may be disposed between the gas inlet portion 51 and the lower plate 53. The gas inlet portion 51 may protrude upward from an upper surface of the upper plate 52. The gas inlet portion 51 and the upper plate 52 may be formed integrally.

[0055] The upper plate 52 may include a first connection hole 521 and a second connection hole 522 .

[0056] The first connection hole 521 is for supplying the first process gas. The first connection hole 521 may be formed to penetrate the upper plate 52. The first connection hole 521 may be connected to the gas inlet hole 510. Thus, the first process gas discharged from the first gas supply hole 410 may be introduced into the first connection hole 521 through the gas inlet hole 510. The first connection hole 521 may belong to the first gas passage 5a.

[0057] The upper plate 52 may include a plurality of the first connection holes 521. The first connection holes 521 may be formed to penetrate the upper plate 52 at positions spaced apart from each other. When the first connection holes 521 are provided in a plurality, the gas injection unit 5 may include a plurality of the gas inlet portions 51. In this case, the gas supply unit 4 may include a plurality of the first connection holes 521 and the first gas supply holes 410. The gas inlet portions 51, the first gas supply holes 410, and the first connection holes 521 may be provided in the same numbers.

[0058] The second connection hole 522 is for supplying the second process gas. The second connection hole 522 may be formed to penetrate the upper plate 52. The second process gas discharged from the gas exhaust hole 43 may flow into the second connection hole 522. In this case, the second process gas may be discharged from the gas exhaust hole 43, supplied to a diffusion part 221 (shown in FIG. 9) formed in the lid 22, and then supplied from the diffusion part 221 to the second connection hole 522. The diffusion part 221 may be embodied as a groove formed to a certain depth on the lower surface of the lid 22. The second connection hole 522 may belong to the second gas passage 5b. The second connection hole 522 and the first connection hole 521 may be formed to penetrate the upper plate 52 at positions spaced apart from each other.

[0059] The upper plate 52 may include a plurality of the second connection holes 522. The second connection holes 522 may be formed at positions spaced apart from each other to penetrate the upper plate 52. The second process gas discharged from the gas exhaust hole 43 may flow into each of the second connection holes 522 through the diffusion part 221. In this case, the diffusion part 221 may be formed in a shape in which the size of the horizontal cross section increases as it extends downward. For example, the diffusion part 221 may be formed in a shape of a circular truncated cone.

[0060] The lower plate 53 is disposed above the substrate support portion 3. With respect to the vertical direction (Z-axis direction), the lower plate 53 can be disposed between the substrate support portion 3 and the upper plate 52. The lower plate 53 can be disposed such that an upper surface thereof faces a lower surface of the upper plate 52.

[0061] The lower plate 53 may include the first injection hole 50 and a plurality of second injection holes 531 .

[0062] The first injection holes 50 are for injecting the first process gas. The first injection holes 50 may be formed to penetrate the lower plate 53. The first injection holes 50 may be formed to penetrate the lower plate 53 at positions spaced apart from each other.

[0063] The second injection holes 531 are for injecting the second process gas. The second injection holes 531 may be formed to penetrate the lower plate 53. The second injection holes 531 may be formed to penetrate the lower plate 53 at positions spaced apart from each other. The second injection holes 531 and the first injection holes 50 may be disposed to be spaced apart from each other.

[0064] The gas injection portion 5 may include a plurality of flow path protrusions 54 and a buffer portion 55 .

[0065] The flow passage protrusions 54 are disposed between the lower plate 53 and the upper plate 52. The flow passage protrusions 54 may be disposed apart from each other. Each of the flow passage protrusions 54 may have a flow passage hole 541 formed therein. The flow passage hole 541 may be formed to penetrate each of the flow passage protrusions 54. One side of the flow passage hole 541 may be connected to each of the second connection holes 522, and the other side may be connected to each of the second injection holes 531. Thus, the second process gas flows along the second connection hole 522, the flow passage hole 541, and the second injection hole 531, and is injected toward the substrate (S). The second connection hole 522, the flow passage hole 541, and the second injection hole 531 may belong to the second gas flow passage 5b. In this case, the diffusion part 221 may deliver the second process gas discharged from the gas discharge hole 43 to the second gas flow passage 5b. The diffusion part 221 may diffuse the second process gas and deliver the gas to each of the second connection holes 522 of the second gas passage 5b.

[0066] The buffer portion 55 is disposed outside the flow passage protrusion 54 between the lower plate 53 and the upper plate 52. The buffer portion 55 may function as a diffusion space in which the first process gas is diffused. One side of the buffer portion 55 may be connected to the first connection hole 521 and the other side may be connected to the first injection hole 50. Thus, the first process gas flows along the first connection hole 521, the buffer portion 55, and the first injection hole 50 and is injected toward the substrate (S). The first connection hole 521, the buffer portion 55, and the first injection hole 50 may belong to the first gas flow passage 5a. When a plurality of the first connection holes 521 are provided, the first connection holes 521 may be connected to the buffer portion 55 at positions spaced apart from each other.

[0067] Here, the gas supply unit 4 may include a plurality of the gas exhaust holes 43. One side of each of the gas exhaust holes 43 may be connected to the second gas supply hole 42, and the other side may be connected to the diffusion unit 221 at different positions. In this case, the gas exhaust holes 43 may be formed to extend in different directions around the second gas supply hole 42 and penetrate the side of the gas supply unit 4. For example, as shown in FIG. 10, four gas exhaust holes 43 may be formed to extend in different directions around the second gas supply hole 42. Through the gas exhaust holes 43, the substrate processing apparatus 1 according to the present invention may increase the diffusion force of the second process gas in the diffusion unit 221. Thus, the substrate processing apparatus 1 according to the present invention may reduce the deviation in the flow rate of the second process gas supplied to the second connection hole 522. Therefore, the substrate processing apparatus 1 according to the present invention may be embodied such that the second process gas is uniformly sprayed onto the substrate (S), thereby improving the quality of the substrate (S) subjected to the processing process using the second process gas.

[0068] Meanwhile, the gas supply connection unit 41 may include a plurality of the first gas supply holes 410. In this case, as shown in FIG. 10, each of the first gas supply holes 410 may be disposed between the gas exhaust holes 43 in a circumferential direction based on the second gas supply hole 42. As a result, the substrate processing apparatus 1 according to the present invention may increase the supply amount of the first process gas and the second process gas through the first gas supply holes 410 and the gas exhaust hole 43, while implementing the gas supply unit 4 in a compact size. In addition, the substrate processing apparatus 1 according to the present invention may reduce the position deviation of the first process gas flowing along the first gas supply holes 410 and the second process gas flowing along the gas exhaust hole 43, thereby reducing the quality difference between the process using the first process gas and the process using the second process gas. Therefore, the substrate processing apparatus 1 according to the present invention may further improve the quality of the substrate (S) subjected to the process using the first process gas and the second process gas.

[0069] 3-12, a substrate processing apparatus 1 according to the present invention can include an outer sealing portion 71 (shown in FIG. 12).

[0070] The outer sealing part 71 seals the gap between the gas inlet 51 and the gas supply connection part 41. The outer sealing part 71 may be disposed at a position spaced apart from the sealing part 6. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that the sealing part 6 and the outer sealing part 71 are disposed at different positions to maintain airtightness between the gas inlet 51 and the gas supply connection part 41. Thus, the substrate processing apparatus 1 according to the present invention may further strengthen the blocking force for blocking leakage of the first process gas, thereby further reducing the amount of leakage of the first process gas. The outer sealing part 71 may be formed in a circular ring shape (annular shape) or an elliptical ring shape (annular shape). The outer sealing part 71 may be formed to have a larger diameter than the sealing part 6.

[0071] In the case where the outer sealing part 71 is provided, the gas inlet part 51 may include a protrusion 513 (shown in FIG. 12). The protrusion 513 protrudes outward from the outer surface of the inlet body 512. The protrusion 513 may be disposed under the cover part 412. In this case, the outer sealing part 71 may be disposed between the cover part 412 and the protrusion 513 to seal the gap between the cover part 412 and the protrusion 513. Thus, the outer sealing part 71 may seal the gap between the gas supply connection part 41 and the gas inlet part 51 at a position spaced outward from the sealing part 6. The outer sealing part 71 may be disposed at a height lower than the sealing part 6 based on the vertical direction (Z-axis direction). At least one of the cover part 412 and the protrusion 513 may be formed with a groove for inserting the outer sealing part 71.

[0072] 3-12, a substrate processing apparatus 1 according to the present invention can include an inner sealing portion 72 (shown in FIG. 12).

[0073] The inner sealing part 72 seals the gap between the gas inlet 51 and the gas supply connection part 41. The inner sealing part 72 may be disposed at a position spaced apart from the sealing part 6 inward. Thus, the substrate processing apparatus 1 according to the present invention may be embodied such that the sealing part 6 and the inner sealing part 72 are disposed at different positions to maintain airtightness between the gas inlet 51 and the gas supply connection part 41. Thus, the substrate processing apparatus 1 according to the present invention may further strengthen the blocking force for blocking leakage of the first process gas, thereby further reducing the amount of leakage of the first process gas. The inner sealing part 72 may be formed in a circular ring shape (annular shape) or an elliptical ring shape (annular shape). The inner sealing part 72 may be formed to have a smaller diameter than the sealing part 6.

[0074] The inner sealing part 72 is disposed between the insertion part 511 and the gas supply connection part 41 and can seal the gap between the insertion part 511 and the gas supply connection part 41. Thus, the inner sealing part 72 can seal the gap between the gas inlet part 51 and the gas supply connection part 41 at a position spaced inward from the sealing part 6. The inner sealing part 72 can be disposed at a height higher than the sealing part 6 based on the vertical direction (Z-axis direction). At least one of the insertion part 511 and the gas supply connection part 41 can be formed with a groove into which the inner sealing part 72 is inserted.

[0075] The substrate processing apparatus 1 according to the present invention may include both the inner sealing part 72 and the outer sealing part 71. In this case, the substrate processing apparatus 1 according to the present invention may further strengthen the sealing force between the gas inlet part 51 and the gas supply connection part 41 by using the inner sealing part 72, the outer sealing part 71, and the sealing part 6.

[0076] 2 to 13, a substrate processing apparatus 1 according to the present invention can include a fastening portion 8 (shown in FIG. 13).

[0077] The fastening part 8 connects the gas supply part 4 and the gas injection part 5. The fastening part 8 limits a relative moving distance between the gas supply part 4 and the gas injection part 5, thereby preventing the first process gas from leaking between the gas supply part 4 and the gas injection part 5. The fastening part 8 can be fastened to the gas supply part 4 and the gas injection part 5.

[0078] When the fastening part 8 is provided, the gas supply part 4 may include a coupling part 4a. The coupling part 4a protrudes outward from the outer surface of the gas supply connection part 41. As a result, the fastening part 8 can couple the gas supply part 4 and the gas injection part 5 at a position separated from the sealing part 6, and can be disposed so as not to interfere with the sealing part 6. An upper part of the fastening part 8 can be inserted into a coupling hole formed in the coupling part 4a, and a lower part of the fastening part 8 can be inserted into a fastening hole formed in the gas injection part 5.

[0079] Meanwhile, in the above embodiment, the gas inlet 51 is inserted into the gas supply connection 41, but the substrate processing apparatus 1 according to the present invention may also be embodied in an embodiment in which the gas supply connection 41 is inserted into the gas inlet 51. Such an embodiment will be described in detail with reference to Figs. 2 to 14 as follows.

[0080] The gas supply connection part 41 may include an insertion part 415. The insertion part 415 is inserted into the gas inlet part 51. The insertion part 415 may be formed to protrude toward the gas inlet part 51. The first gas supply hole 410 may be formed to penetrate the insertion part 415. The insertion part 415 may correspond to a lower part of the gas supply connection part 41.

[0081] When the insertion part 415 is inserted into the gas inlet part 51, the sealing part 6 may be disposed outside the insertion part 415. Thus, the sealing part 6 may be disposed inside the gas inlet part 51 to maintain airtightness between the gas inlet part 51 and the gas supply connection part 41. Therefore, even if a relative movement occurs between the gas injection part 5 and the gas supply connection part 41 due to deformation or the like, the substrate processing apparatus 1 according to the present invention can prevent the first process gas from leaking between the gas inlet part 51 and the gas supply connection part 41 by using the sealing part 6. Thus, the substrate processing apparatus 1 according to the present invention can reduce particles generated due to leakage of the first process gas, thereby improving the quality of the substrate (S) on which the processing process is performed. Furthermore, the substrate processing apparatus 1 according to the present invention can reduce the amount of gas wasted due to leakage of the first process gas, thereby reducing the process cost.

[0082] The sealing part 6 may be inserted into the gas inlet 51. Thus, the sealing part 6 contacts the gas supply connecting part 41 and the gas inlet 51 inside the gas inlet 51, respectively, thereby maintaining airtightness between the gas inlet 51 and the gas supply connecting part 41 which move relatively. In this case, the gas inlet 51 may include an insertion groove 514. The insertion groove 514 may be embodied as a groove formed to a certain depth from the upper surface of the gas inlet 51. The insertion groove 514 may be formed to be connected to the gas inlet hole 510.

[0083] The insertion part 415 can be inserted into the insertion groove 514. The insertion part 415 can be inserted into the insertion groove 514 so as to be movable in the vertical direction (Z-axis direction). When the insertion part 415 is provided, the sealing part 6 can contact each of the inner side surface 512a of the gas inlet part 51 and the outer side surface 415a of the insertion part 415 so as to maintain airtightness between the gas inlet part 51 and the gas supply connection part 41, which move relatively. The inner side surface 512a of the gas inlet part 51 is an inner surface arranged to face the insertion groove 514. The outer side surface 415a of the insertion part 415 is an outer surface arranged to face the inner side surface 512a of the gas inlet part 51 when inserted into the insertion groove 514. The sealing unit 6 can maintain airtightness while allowing relative movement between the gas inlet 51 and the gas supply connection unit 41 within a range in which the sealing unit 6 maintains contact with each of an inner surface 512a of the gas inlet 51 and an outer surface 415a of the insertion unit 415. The sealing unit 6 can be coupled to the insertion unit 415 to surround the outer surface 415a of the insertion unit 415.

[0084] In order to increase the distance over which the sealing part 6 is maintained in contact with the inner surface 512a of the gas inlet part 51, the gas inlet part 51 may include a cover part 515. The cover part 515 may protrude upward to cover a part of the outer surface of the gas supply connection part 41. The inner surface of the cover part 515 may belong to the inner surface 512a of the gas inlet part 51. Thus, the length of the inner surface 512a of the gas inlet part 51 is increased by the length over which the cover part 515 protrudes upward. Therefore, the substrate processing apparatus 1 according to the present invention can increase the length over which the sealing part 6 maintains airtightness while allowing the gas inlet part 51 and the gas supply connection part 41 to move relative to each other by using the cover part 515.

[0085] Although not shown in the figure, even when embodied in an embodiment in which the gas supply connection portion 41 is inserted into the gas inlet portion 51, the substrate processing apparatus 1 according to the present invention can also be embodied to include at least one of the outer sealing portion 71, the inner sealing portion 72, and the fastening portion 8.

[0086] The present invention described above is not limited to the above-mentioned embodiments and the accompanying drawings, and it will be apparent to those skilled in the art to which the present invention pertains that various substitutions, modifications and alterations are possible without departing from the technical spirit of the present invention.

Claims

1. Chamber, A substrate support portion that supports the substrate inside the chamber, A gas injection section comprising a plurality of first injection holes for injecting a first-process gas toward the substrate, and a gas injection section communicating with the first injection holes and including a gas inlet for the inflow of the first-process gas, A gas supply unit that supplies the first process gas to the gas injection unit, including a gas supply connection unit connected to the gas inlet unit, and Includes a sealing section for maintaining airtightness between the gas inlet and the gas supply connection section, The gas inlet portion includes an insertion portion that is inserted into the gas supply connection portion, The sealing portion is positioned outside the insertion portion to maintain airtightness between the gas inlet portion and the gas supply connection portion. The outer surface of the insertion portion is formed to have an elliptical horizontal cross-section, The sealing portion is elliptical in shape along the outer surface of the insertion portion and is connected to the insertion portion. The gas supply connection includes a cover portion that protrudes downward so as to cover a part of the outer surface of the gas inlet portion, and maintains contact with the sealing portion when the gas inlet portion moves up and down. A substrate processing apparatus characterized in that the outer sealing portion is provided to maintain a seal at a position spaced outward from the sealing portion.

2. The substrate processing apparatus according to claim 1, characterized in that the sealed portion allows relative movement of the gas inlet with respect to the gas supply connection portion, or allows relative movement of the gas supply connection portion with respect to the gas inlet portion, while maintaining airtightness between the gas inlet portion and the gas supply connection portion.

3. The gas supply connection portion includes an insertion groove into which the gas inlet portion is inserted. The gas inlet portion includes an insertion portion that is inserted into the insertion groove so as to be movable in the vertical direction. The substrate processing apparatus according to claim 1, characterized in that the sealing portion contacts the inner surface of the gas supply connection portion facing the insertion groove and the outer surface of the insertion portion, respectively, in order to maintain airtightness between the gas inlet portion and the gas supply connection portion, which move relatively.

4. The gas inlet includes an inlet body that is inserted into the insertion groove so as to be movable in the vertical direction, The insertion portion protrudes from the upper surface of the inlet body, The sealing portion is coupled to the insertion portion and positioned above the inlet body. The substrate processing apparatus according to claim 3, characterized in that the upper surface of the inlet body supports the sealing portion and maintains a constant sealing force when the gas inlet portion moves up and down.

5. Chamber, A substrate support portion that supports the substrate inside the chamber, A gas injection section comprising a plurality of first injection holes for injecting a first-process gas toward the substrate, and a gas injection section communicating with the first injection holes and including a gas inlet for the inflow of the first-process gas, A gas supply unit that supplies the first process gas to the gas injection unit, including a gas supply connection unit connected to the gas inlet unit, and Includes a sealing section for maintaining airtightness between the gas inlet and the gas supply connection section, The gas supply connection includes an insertion portion that is inserted into the gas inlet portion, The sealing portion is positioned outside the insertion portion to maintain airtightness between the gas inlet portion and the gas supply connection portion. The first gas supply hole of the gas supply connection and the gas inlet hole of the gas inlet are each formed to include an elliptical horizontal cross-section to increase the gas flow rate. The gas supply connection portion includes a cover portion that protrudes upward so as to cover a part of the inner surface of the gas inlet portion, thereby increasing its vertically movable length. A substrate processing apparatus characterized in that the inner sealing portion is provided to maintain a seal at a position spaced inward from the sealing portion.

6. The gas inlet portion includes an insertion groove into which the gas supply connection portion is inserted. The gas supply connection portion includes an insertion portion that is inserted into an insertion groove so as to be movable in the vertical direction. The substrate processing apparatus according to claim 5, characterized in that the sealing portion contacts the inner surface of the gas inlet facing the insertion groove and the outer surface of the insertion portion, respectively, in order to maintain airtightness between the gas inlet and the gas supply connecting portion, which move relative to each other.

7. The gas supply connection includes a first gas supply port that receives the first process gas, The gas supply unit includes a second gas supply port for receiving the second process gas, and a gas discharge port from which the second process gas is discharged. The substrate processing apparatus according to claim 1 or 5, characterized in that the gas injection section includes a first gas flow path through which the first process gas flows, and a second gas flow path through which the second process gas flows, spatially separated from the first gas flow path.

8. The aforementioned gas injection unit, A lower plate positioned above the substrate support portion, A top plate positioned above the lower plate, The substrate processing apparatus according to claim 7, characterized in that it includes a plurality of flow channel protrusions disposed between the lower plate and the upper plate.

9. The first gas flow path is A first connecting hole formed through the upper plate is connected to the gas inlet hole formed through the aforementioned gas inlet section, A buffer portion connected to the first connecting hole and positioned outside the flow channel projection between the lower plate and the upper plate, and The substrate processing apparatus according to claim 8, characterized in that it includes the first injection hole, which is connected to the buffer portion and penetrates the lower plate.

10. The second gas flow path is The second process gas discharged from the gas discharge hole flows into a plurality of second connecting holes formed through the upper plate, A plurality of flow path holes are formed, connected to each of the second connecting holes and penetrating each of the flow path projections, The substrate processing apparatus according to claim 8, characterized in that it includes a plurality of second injection holes connected to each of the flow path holes and formed through the lower plate.

11. Includes a lid that covers the top of the chamber, The gas supply unit is inserted into and coupled to the lid, The substrate processing apparatus according to claim 7, characterized in that the lid has a diffusion section formed therein for transmitting the second process gas discharged from the gas discharge hole to the second gas flow path.

12. The gas supply unit includes a plurality of gas discharge holes, The substrate processing apparatus according to claim 11, characterized in that one side of the gas discharge hole is connected to the second gas supply hole, and the other side is connected to the diffusion section at different positions.

13. The gas supply connection includes a plurality of first gas supply holes for discharging the first process gas, The substrate processing apparatus according to claim 12, characterized in that each of the first gas supply holes is arranged between the gas discharge holes along a circumferential direction with respect to the second gas supply hole, thereby improving the non-uniformity of gas supply in the circumferential direction when processing a large-area substrate.

14. The substrate processing apparatus according to claim 1 or 5, characterized by including a fastening portion that connects the gas supply portion and the gas injection portion.

Images