Light-emitting diode package

Abstract

The present invention relates to a light-emitting diode package. Specifically, according to an embodiment of the present invention, a light-emitting diode chip (100) that generates light of a first color, a wavelength conversion layer (200) that is disposed above the light-emitting diode chip (100) and generates light of a second color by being excited by the light of the first color, a transparent layer (300) that is disposed above the wavelength conversion layer 200, and a wall portion (400) in which an accommodation space for accommodating the light-emitting diode chip (100) and the wavelength conversion layer (200) is formed are included. The wall portion (400) includes an inner surface (401) that surrounds the accommodation space, and the transparent layer (300) is connected to the inner surface of the wall portion (400) so that the accommodation space is closed to the outside, and a light-emitting diode package 1 can be provided.

Description

Technical Field

[0001] The present invention relates to a light emitting diode package.

Background Art

[0002] A light emitting diode (LED) package emits light to the outside through electric power received from the outside. Such a light emitting diode package is exposed to the outside for a long time by being used in lighting, a display backlight, an automotive headlamp, etc.

[0003] There is a need for a light emitting diode package that can block the penetration of foreign matter, water, etc. into the inside of the light emitting diode package even when it is exposed to the outside for a long time and can maintain reliability for a long time.

Summary of the Invention

Problems to be Solved by the Invention

[0004] One embodiment of the present invention was invented paying attention to the above background, and aims to provide a light emitting diode package that blocks the penetration of foreign matter inside.

Means for Solving the Problems

[0005] According to one aspect of the present invention, there is provided a light emitting diode package 1 including: a light emitting diode chip 100 that generates light of a first color; a wavelength conversion layer 200 that is disposed above the light emitting diode chip 100 and generates light of a second color by being excited by the light of the first color; a transparent layer 300 that is disposed above the wavelength conversion layer 200; and a wall portion 400 in which an accommodation space for accommodating the light emitting diode chip 100 and the wavelength conversion layer 200 is formed. The wall portion 400 includes an inner surface 401 that surrounds the accommodation space, and the transparent layer 300 is connected to the inner surface of the wall portion 400 so that the accommodation space is closed to the outside.

[0006] Further, the light-emitting diode chip 100 includes a semiconductor layer 120 and a translucent substrate 110 disposed above the semiconductor layer 120, and a light-emitting diode package 1 can be provided in which the thickness t3 of the transparent layer 300 is smaller than the thickness t1 of the translucent substrate 110.

[0007] Moreover, a light-emitting diode package 1 can be provided in which the thickness t1 of the translucent substrate 110 is 100 μm to 150 μm.

[0008] Also, a light-emitting diode package 1 can be provided in which the thickness t3 of the transparent layer 300 is 30 μm to 50 μm.

[0009] Furthermore, the light-emitting diode chip 100 includes a semiconductor layer 120 and a translucent substrate 110 disposed above the semiconductor layer 120, and a light-emitting diode package 1 can be provided in which the thickness t1 of the translucent substrate 110 is smaller than the thickness t2 of the wavelength conversion layer 200.

[0010] In addition, a light-emitting diode package 1 can be provided in which the thickness t2 of the wavelength conversion layer 200 is 120 μm to 200 μm.

[0011] Also, a light-emitting diode package 1 can be provided in which the wall portion 400 intersects an edge extension plane (p) which is a virtual plane extending along the horizontal direction from an edge (a) at the lower end of the transparent layer 300.

[0012] In addition, an inclined surface 410a inclined downward toward the outside is provided at the upper end of the wall portion 400.

[0013] A light-emitting diode package 1 can be provided in which the inclined surface 410a intersects the edge extension plane (p) between the upper end and the lower end.

[0014] In addition, an inclined surface 410a inclined downward toward the outside is provided at the upper end of the wall portion 400, the wavelength conversion layer 200 includes a plurality of phosphors 210, and in the vertical direction, the phosphor 210 disposed at the uppermost end among the plurality of phosphors 210 is disposed between the upper end and the lower end of the inclined surface 410a, and a light-emitting diode package 1 can be provided.

[0015] In addition, an outer peripheral surface of the wavelength conversion layer 200 and an outer peripheral surface of the transparent layer 300 can be continuously extended without notches, and a light-emitting diode package 1 can be provided.

[0016] In addition, the light-emitting diode chip 100 includes a semiconductor layer 120 and a translucent substrate 110 disposed above the semiconductor layer 120, and an outer peripheral surface of the wavelength conversion layer 200 and an outer peripheral surface of the translucent substrate 110 can be arranged side by side along the vertical direction, and a light-emitting diode package 1 can be provided.

[0017] In addition, at least a part of an outer peripheral surface of the light-emitting diode chip 100 can be spaced apart from an inner surface 401 of the wall portion 400, and a light-emitting diode package 1 can be provided.

[0018] In addition, the light-emitting diode chip 100 includes a semiconductor layer 120 and a translucent substrate 110 disposed above the semiconductor layer 120, and a thickness t1 of the translucent substrate 110 is larger than a horizontal separation distance between an upper end of an outer peripheral surface of the translucent substrate 110 and an upper end of the inner surface 401 of the wall portion 400, and a light-emitting diode package 1 can be provided.

[0019] In addition, a translucent layer 700 that transmits the light of the first color to the wavelength conversion layer 200 is further included, and the translucent layer 700 is disposed between the light-emitting diode chip 100 and the wavelength conversion layer 200, and a light-emitting diode package 1 can be provided.

[0020] Moreover, a light-emitting diode package 1 can be provided in which the thickness t4 of the light-transmitting layer 700 is smaller than the thickness t3 of the transparent layer 300.

[0021] Moreover, a light-emitting diode package 1 can be provided in which the wavelength conversion layer 200 is formed of any one or more of PIS (phosphor in silicone), PIG (phosphor in glass), and Si (silicone).

[0022] Moreover, a light-emitting diode package 1 can be provided, including a light-emitting diode chip 100 that generates light of a first color, a wavelength conversion layer 200 that is disposed above the light-emitting diode chip 100 and generates light of a second color by being excited by the light of the first color, a wall portion 400 in which an accommodation space for accommodating the light-emitting diode chip 100 and the wavelength conversion layer 200 is formed, and a transparent layer 300 that is disposed above the wavelength conversion layer 200 and the wall portion 400 so that the accommodation space is closed to the outside. The wall portion 400 includes an inner surface 401 that surrounds the accommodation space, and an outer circumferential surface of the transparent layer 300 is disposed outside the inner surface 401 of the wall portion 400.

[0023] Moreover, a light-emitting diode package 1 can be provided in which the outer circumferential surface of the transparent layer 300 and the outer circumferential surface of the wall portion 400 are arranged side by side along the vertical direction.

[0024] Moreover, a light-emitting diode package 1 can be provided in which a plurality of irregularities 301a are formed on a surface 301 of the transparent layer 300 that is exposed to the outside.

[0025] In addition, a light-emitting diode chip 100 that generates light of a first color, a wavelength conversion layer 200 that is disposed above the light-emitting diode chip 100 and generates light of a second color by being excited by the light of the first color, a wall portion 400 in which an accommodation space for accommodating the light-emitting diode chip 100 and the wavelength conversion layer 200 is formed, and a transparent layer 300 that is disposed above the wavelength conversion layer 200 and the wall portion 400 so that the accommodation space is closed to the outside are included, and a surface 301 of the transparent layer 300 has a curved surface shape that bulges outward, and a light-emitting diode package 1 can be provided.

Effect of the Invention

[0026] The light-emitting diode package according to an embodiment of the present invention has an effect of improving reliability by blocking the penetration of foreign substances inside.

Brief Description of the Drawings

[0027]

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Mode for Carrying Out the Invention

[0028] Hereinafter, specific embodiments for embodying the technical idea of the present invention will be described in detail with reference to the drawings.

[0029] In the description of the present invention, when it is determined that a specific description of a related known configuration or function makes the gist of the present invention unclear, the detailed description thereof will be omitted.

[0030] Also, when a certain component is referred to as being "connected" or "joined" to another component, it should be understood that it may be directly connected or joined to the other component, but there may also be other components in between.

[0031] The terms used in this specification are merely used to explain specific embodiments and are not used to limit the present invention. Singular expressions include plural expressions unless the context clearly indicates a different meaning.

[0032] Terms including ordinal numbers such as first, second, etc. can be used to describe various components, but the components should not be limited by such terms. The terms are only used for the purpose of distinguishing one component from another.

[0033] As used herein, the meaning of "comprising" does not exclude the presence or addition of other specific characteristics, regions, integers, steps, operations, elements and / or components while embodying a specific characteristic, region, integer, step, operation, element and / or component.

[0034] In addition, in this specification, expressions such as "upper", "lower", and "upper surface" are described based on the illustration in the drawings, and it is clarified in advance that when the direction of the object changes, it can be expressed differently. Also, the vertical direction can be defined as the direction in which the light-emitting diode chip 100, the wavelength conversion layer 200, and the transparent layer 300 are stacked. Further, the upper direction can be defined as the direction in which the wavelength conversion layer 200 faces the transparent layer 300, and the lower direction can be defined as the opposite direction of the upper direction.

[0035] Hereinafter, with reference to the drawings, the specific configuration of the light-emitting diode package 1 according to the first embodiment of the present invention will be described.

[0036] Referring to FIG. 1, the light-emitting diode package 1 according to the first embodiment of the present invention can be supplied with power from the outside and emit light to the outside. Such a light-emitting diode package 1 can include a light-emitting diode chip 100, a wavelength conversion layer 200, a transparent layer 300, a wall portion 400, and a substrate 600.

[0037] The light-emitting diode chip 100 can be electrically connected to the substrate 600. Such a light-emitting diode chip 100 can generate light of a first color. Such light of the first color can be, for example, light having a peak wavelength in the wavelength range of 430 nm to 550 nm. Such a light-emitting diode chip 100 can be mounted on the substrate 600.

[0038] Such a light-emitting diode chip 100 can include a light-transmitting substrate 110 and a semiconductor layer 120. The semiconductor layer 120 can be formed on the light-transmitting substrate 110 and can be in contact with the light-transmitting substrate 110. Such a light-transmitting substrate 110 can be disposed between the semiconductor layer 120 and the wavelength conversion layer 200 in the vertical direction. For example, the light-transmitting substrate 110 can be disposed above the semiconductor layer 120 and below the wavelength conversion layer 200.

[0039] As an example, the material of such a light-transmitting substrate 110 can include any one or more of sapphire (Al 2 O 3 ), silicon carbide (SiC), gallium nitride (GaN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium oxide (Ga 2 O 3 ), and silicon. As an example, the thickness t1 of such a light-transmitting substrate 110 can be 100 μm to 150 μm. The thickness t1 of the light-transmitting substrate 110 can be defined as the vertical separation distance between the upper end and the lower end of the light-transmitting substrate 110. The light generated in the semiconductor layer 120 spreads equally in the horizontal and vertical regions inside the light-transmitting substrate 110, and after the uniformly distributed light passes through the light-transmitting substrate 110, it is incident on the wavelength conversion layer 200. At this time, when the thickness t1 of the light-transmitting substrate 110 is lower than 100 μm, sufficient diffusion of light does not occur in the light-transmitting substrate 100, so that the amount of light incident on the wavelength conversion layer 200 becomes non-uniform, and there is a problem that the light conversion efficiency in the wavelength conversion layer 200 decreases. Accordingly, increasing the thickness t1 of the light-transmitting substrate 110 to be greater than 100 μm has the effect of maximizing the light conversion efficiency when the light uniformly distributed in the region inside the light-transmitting substrate 110 is incident on the wavelength conversion layer 200.

[0040] In addition, when the thickness t1 of the light-transmitting substrate 110 is greater than 150 μm, since the diffusion path becomes longer in the process of light diffusion within the light-transmitting substrate 110, there is a problem that the possibility of light loss increases. When the thickness t1 of the light-transmitting substrate 110 is greater than 150 μm, a large amount of heat generated by the light-emitting diode chip 100 accumulates in the light-transmitting substrate 110, and there is a problem that the accumulated heat heats the wavelength conversion layer 200 and damages the wavelength conversion layer 200.

[0041] Thus, when the thickness t1 of the light-transmitting substrate 110 is less than 150 μm, the extraction efficiency of the light generated by the light-emitting diode chip 100 can be improved. When the thickness t1 of the light-transmitting substrate 110 is less than 150 μm, it is possible to prevent a large amount of heat generated by the light-emitting diode chip 100 from accumulating in the light-transmitting substrate 110 and prevent the wavelength conversion layer 200 from being damaged. Such a light-transmitting substrate 110 can include a sapphire outer peripheral surface 111 and a pattern bottom surface 112.

[0042] The outer peripheral surface 111 of the light-transmitting substrate 110 can be defined on the outer peripheral surface of the light-transmitting substrate 110. The peripheral surface 111 can have a side surface perpendicular to the upper surface of the light-transmitting substrate 110, that is, the surface where the light-transmitting substrate 110 faces the wavelength conversion layer 200, or an inclined side surface having a predetermined angle (0 to 30 °C). The outer peripheral surface 111 of such a light-transmitting substrate 110 can be surrounded by a wall portion 400. For example, any part of the sapphire outer peripheral surface 111 can be adjacent to or in contact with the wall portion 400. Or, in different forms, any part of the sapphire outer peripheral surface 111 can be brought into contact with the wall portion 400, and the other part can be separated from the wall portion 400.

[0043] Referring further to FIG. 2, the pattern bottom surface 112 can be defined on the lower surface of the light-transmitting substrate 110. A predetermined pattern can be formed on such a pattern bottom surface 112. For example, a plurality of grooves or protrusions can be formed on the pattern bottom surface 112. Also, the plurality of grooves or protrusions formed on the pattern bottom surface 112 can be arranged along the horizontal direction. Such a pattern bottom surface 112 can be connected to the upper surface of the semiconductor layer 120. The light-transmitting substrate 110 having such a pattern bottom surface 112 can be named as a PSS (patterned sapphire substrate).

[0044] The semiconductor layer 120 can include an n-type semiconductor layer and a p-type semiconductor layer. The n-type semiconductor layer may be a gallium nitride-based (for example, AlGaN or GaN) semiconductor layer doped with silicon (Si). The p-type semiconductor layer may be a gallium nitride-based (for example, AlGaN or GaN) semiconductor layer doped with magnesium (Mg). Such a semiconductor layer 120 can be formed by any one of a single layer, a multilayer, and a superlattice layer. Such a semiconductor layer 120 can further include an active layer. The active layer can generate light. Such an active layer can have a single quantum well (SQW) structure or a multi quantum well (MQW) structure. The composition and thickness of the well layer of such an active layer can determine the wavelength of the generated light. The semiconductor layer is Al x In (1-x) GaN (0 ≦ x ≦ 1) or Al x In (1-x) GaP (0 ≦ x ≦ 1) or Al x In (1-x) substances such as GaAs (0 ≦ x ≦ 1) can be used.

[0045] The wavelength conversion layer 200 can convert the wavelength of the light of the first color to generate the light of the second color. Such a wavelength conversion layer 200 can be named as the "wavelength conversion layer" in this specification. Such light of the second color can, for example, have a peak wavelength in the wavelength range of 470 nm to 550 nm. Or it may be cyan light having CIE coordinates (X, Y) (0.02 < X < 0.24, 0.32 < Y < 0.68). Such a wavelength conversion layer 200 can be disposed on the light-emitting diode chip 100. For example, the wavelength conversion layer 200 can be disposed above the light-emitting diode chip 100. Also, the thickness t2 of the wavelength conversion layer 200 may be greater than the thickness t1 of the translucent substrate 110. The thickness t2 of the wavelength conversion layer 200 can be defined by the vertical separation distance between the upper end and the lower end of the wavelength conversion layer 200. Such a thickness t2 of the wavelength conversion layer 200 can, for example, be 120 μm to 200 μm. When the thickness t2 of the wavelength conversion layer 200 is lower than 120 μm, there is a problem that it is difficult to sufficiently embody the concentration ratio at which the phosphor 210 or the absorbing substance (not shown) described later is formed in a certain volume of the carrier 220. For example, in order to generate the light of the second color, a predetermined amount or more of the phosphor 210 is required. However, when the thickness t2 of the wavelength conversion layer 200 is lower than 120 μm, there is a problem that it is difficult to embody the above-defined concentration ratio and to provide a predetermined amount or more of the phosphor 210 to be included for wavelength conversion. In other words, when the thickness t2 of the wavelength conversion layer 200 is greater than 120 μm, the predetermined concentration ratio can be embodied and a predetermined amount or more of the phosphor 210 can be provided.

[0046] Also, when the thickness t2 of the wavelength conversion layer 200 is greater than 200 μm, there is a problem that the light efficiency of the light-emitting diode package 1 decreases as the amount of light absorbed inside the wavelength conversion layer 200 increases. In other words, when the thickness t2 of the wavelength conversion layer 200 is smaller than 200 μm, it is possible to minimize the amount of light absorbed inside the wavelength conversion layer 200 and prevent the light efficiency of the light-emitting diode package 1 from decreasing.

[0047] The material of such a wavelength conversion layer 200 can include any one or more of PIS (phosphor in silicone), PIG (phosphor in glass), and Si (silicone). Such a wavelength conversion layer 200 can include a phosphor 210, an absorber, a carrier 220, and a reinforcing material (not shown).

[0048] The phosphor 210 can excite light of a first color to generate cyan light which is light of a second color. Such phosphors 210 can be provided in a plurality. The plurality of phosphors 210 can be irregularly dispersed and arranged within the carrier 220. Among such a plurality of phosphors 210, the phosphor 210 closest to the transparent layer 300 can be arranged between the upper and lower ends of an inclined surface 410a described later in the vertical direction. In other words, the phosphor 210 arranged at the uppermost end among the plurality of phosphors 210 can be arranged above the lower end of the inclined surface 410a. Such a plurality of phosphors 210 may be those in which the first phosphor is dispersed and arranged in some regions within the carrier 220, or may include the first phosphor and the second phosphor having other components.

[0049] The first phosphor may be a LuAG-based phosphor. Such a first phosphor can generate peak wavelength light in a wavelength range of 490 nm to 550 nm as an example. The second phosphor may be a silicate-based phosphor. Such a second phosphor can generate light having a peak wavelength in a wavelength range of 400 nm to 600 nm as an example. On the other hand, the technical idea of the present invention is not limited thereto, and the phosphor 210 can further include phosphors of other systems in addition to the LuAG-based phosphor and the silicate-based phosphor.

[0050] The absorption substance can absorb regions within a predetermined wavelength range of the phosphor 210 spectrum. For example, the wavelength region of the phosphor 210 spectrum may be 550 nm or less. Such an absorption substance can be mixed with the phosphor 210 and dispersed in the carrier 220. Such an absorption substance can shorten the wavelength of the phosphor 210 and improve the cyan color purity. As an example, the material of such an absorption substance can include neodymium oxide. Also, as an example, the ratio of the first phosphor to the first phosphor, the second phosphor, and the absorption substance may be 70% to 80%.

[0051] The carrier 220 can carry the first phosphor, the second phosphor, and the absorption substance. Such a carrier 220 may be a transparent material or a translucent material. As an example, such a carrier 220 can include any one of silicone-based, epoxy-based, PMMA (polymethyl methacrylate)-based, PE (polyethylene)-based, and PS (polystyrene)-based materials.

[0052] The reinforcing substance can improve the heat resistance and durability of the wavelength conversion layer 200. The reinforcing substance can be carried within the carrier 220. As an example, such a reinforcing substance may be glass fiber. Also, the reinforcing substance can be named "reinforcing filler". This prevents cracks from occurring due to the heat generated in the light-emitting diode chip and the package, and prevents light that has not been converted from being emitted between the crack regions.

[0053] The transparent layer 300 can close the accommodation space in which the light-emitting diode chip 100 and the wavelength conversion layer 200 are accommodated from the outside of the light-emitting diode package 1. In other words, the transparent layer 300 can block foreign matters, water, etc. from penetrating into the light-emitting diode chip 100 and the wavelength conversion layer 200 accommodated in the accommodation space from the outside. Further, the transparent layer 300 serves to emit light that is uniformly distributed after being diffused by the transparent layer 300 before the light converted by the wavelength conversion layer 200 is emitted to the outside.

[0054] Such a transparent layer 300 can include a transparent material. Such a transparent layer 300 can be laminated on the upper surface of the wavelength conversion layer 200. In other words, the transparent layer 300 can be disposed above the wavelength conversion layer 200. Also, the thickness t3 of the transparent layer 300 may be smaller than the thickness t2 of the light-emitting diode chip 100 and the wavelength conversion layer 200. The thickness t3 of the transparent layer 300 can be defined as the vertical separation distance between the upper end and the lower end of the transparent layer 300. As an example, the thickness t3 of such a transparent layer 300 may be 30 μm to 50 μm. When the thickness t3 of the transparent layer 300 is lower than 30 μm, there is a problem that the reliability of the light-emitting diode package 1 decreases as the possibility of foreign matters, water, etc. penetrating into the accommodation space increases. In other words, when the thickness t3 of the transparent layer 300 is larger than 30 μm, the reliability of the light-emitting diode package 1 can be improved by blocking the possibility of foreign matters, water, etc. penetrating into the accommodation space. Further, although a sufficient space for uniformly diffusing the light that has passed through the wavelength conversion layer 200 by the transparent layer 300 is required, when the thickness t3 of the transparent layer 300 is lower than 30 μm, since the diffusion is not sufficient, there is a problem that the light intensity is relatively high and emitted in the region where the phosphor 210 of the wavelength conversion layer 200 is concentrated. In other words, when the thickness t3 of the transparent layer 300 is larger than 30 μm, even if the light intensity of the light incident on the transparent layer 300 is non-uniform, it can be equally diffused by the transparent layer 300, thereby eliminating the uneven light intensity in the light-emitting surface of the package.

[0055] In addition, when the thickness t3 of the transparent layer 300 is greater than 50 μm, there is a problem that the height of the wall portion 400 increases and the size of the light-emitting diode package 1 cannot be miniaturized. For example, the height of the wall portion 400 is provided to correspond to the height of the transparent layer 300, whereby the height of the wall portion 400 can be determined by the height of the transparent layer 300. Further, when the thickness t3 of the transparent layer 300 is greater than 50 μm, there is a problem that the amount of light of the second color absorbed by the transparent layer 300 increases and the light efficiency of the light-emitting diode package 1 decreases. In other words, when the thickness t3 of the transparent layer 300 is less than 50 μm, it is possible to minimize the amount of light of the second color absorbed by the transparent layer 300 and prevent the light efficiency of the light-emitting diode package 1 from decreasing.

[0056] In addition, when the thickness t3 of the transparent layer 300 is greater than 50 μm, there is a problem that the diffusion path becomes longer in the process of light diffusion in the transparent layer 300, and thus the possibility of light disappearance increases. Therefore, by having the thickness of the transparent layer 300 in the range of 30 to 50 μm, it is possible to embody a package having a suitable light efficiency with eliminated luminance unevenness.

[0057] An edge (a) can be formed at the lower end of such a transparent layer 300. Such an edge (a) can be defined at the edge of the interface between the transparent layer 300 and the wavelength conversion layer 200. Such an edge (a) can be disposed between the upper and lower ends of the inclined surface 410a in the vertical direction. For example, the horizontal extension line (p) of the edge (a) can intersect the inclined surface 410a. The horizontal extension line (p) of the edge can be defined as a virtual line that extends along a horizontal direction perpendicular to the vertical direction through the edge (a). The horizontal extension line (p) may be a virtual line extending in the horizontal direction of the interface between the transparent layer 300 and the wavelength conversion layer 200 described above. When the boundary between the transparent layer 300 and the wavelength conversion layer 200 is not clear, the horizontal extension line (p) can be defined as a virtual line extending parallel to the light-transmitting substrate 110 from the uppermost end of the phosphor 210. When the horizontal extension line (p) is arranged to intersect the inclined surface 410a, the thickness of the side wall located on the side surface of the wavelength conversion layer 200 becomes non-uniform. That is, the side wall 400 disposed on the side surface of the upper region of the wavelength conversion layer 200 is thinner in the horizontal direction than the side wall 400 disposed on the side surface of the lower region of the wavelength conversion layer 200. Therefore, heat dissipation is facilitated in the region close to the upper surface corresponding to the light-emitting surface, and deterioration of the phosphor 210 disposed in the region close to the light-emitting surface can be prevented. By preventing the deterioration of the phosphor 210, it is possible to prevent light of wavelengths other than the wavelength intended to be emitted from the phosphor 210 from being emitted.

[0058] Such a transparent layer 300 can contain a reinforcing substance. The reinforcing substance may be the same substance as the reinforcing substance contained in the wavelength conversion layer 200, and may have different shapes in each form. Since the shapes are different, the reinforcing force and the bonding force can be different from each other. Therefore, it has various reinforcing forces and bonding forces, and the transparent layer can be effectively reinforced by a wide range of reinforcing forces and bonding forces.

[0059] The wall portion 400 can be arranged to surround the light-emitting diode chip 100, the wavelength conversion layer 200, and the transparent layer 300. Such a wall portion 400 can provide an accommodation space capable of accommodating the light-emitting diode chip 100, the wavelength conversion layer 200, and the transparent layer 300. Such a wall portion 400 can contain a reflective material. Therefore, the light emitted from the side surface of the light-emitting diode chip 100 is reflected upward to increase the light efficiency. Such a wall portion 400 can include an inner surface 401 that forms the accommodation space. The inner surface 401 can reflect the light generated in the wavelength conversion layer 200. For example, the inner surface 401 can include a reflective substance capable of reflecting light. Further, the wall portion 400 can include an inclined wall portion 410 and a body wall portion 420.

[0060] The inclined wall portion 410 can include an inclined surface 410a that slopes downward at the upper end portion. Such an inclined surface 410a can have a shape in which the height decreases from the inside to the outside. In other words, the upper end of the inclined surface 410a can be arranged more inside than the lower end of the inclined surface 410a. Further, the inclined surface 410a can have a curvature that is concave downward. The inclined wall portion 410 can include an inclined wall inner surface 411 that surrounds the transparent layer 300.

[0061] The inclined wall inner surface 411 can be defined on the inner circumferential surface of the inclined wall portion 410. Such an inclined wall inner surface 411 can be connected to the transparent layer 300. For example, the inclined wall inner surface 411 can contact the outer circumferential surface of the transparent layer 300. The lower end of such an inclined wall inner surface 411 can be arranged below the upper end of the wavelength conversion layer 200. In other words, the lower end of the inclined wall inner surface 411 can be arranged below the phosphor 210 arranged at the uppermost end among the plurality of phosphors 210. Such an inclined wall inner surface 411 can be included in the inner surface 401.

[0062] The body wall portion 420 can be disposed between the inclined wall portion 410 and the substrate 600 in the vertical direction. Such a body wall portion 420 can extend along the vertical direction between the lower end of the inclined wall portion 410 and the upper surface of the substrate 600. Such a body wall portion 420 can include a body wall inner surface 421 that surrounds the light-emitting diode chip 100 and the wavelength conversion layer 200. The body wall portion 420 is formed to have a greater thickness in the vertical direction than the light-emitting diode chip 100, and the upper surface of the body wall portion 420 can be positioned higher than the upper surface of the light-emitting diode chip 100. The body wall portion 420 serves to prevent the light generated by the light-emitting diode chip 100 from leaking to the outside, and also has a light-reflective function, so that the light generated by the light-emitting diode chip 100 is reflected upward and emitted. The outer surface of the body wall portion 420 has an outer surface that is aligned with the outer surface of the base portion 610 disposed at the lower end of the body wall portion 420. When the outer surface of the body wall portion 420 protrudes more than the base portion 610, the body wall portion 420 may be damaged by an external impact, and light may leak into the damaged body wall portion 420, resulting in light damage. To prevent this, it is more effective to align the outer surfaces of the base portion 610 and the body wall portion 420. The body wall portions 420 disposed on the left and right with respect to the light-emitting diode chip 100 as viewed from the side cross-section can have different thicknesses from the surface where the light-emitting diode chip 100 and the body wall portion 420 face each other to the outer surface of the body wall portion 420.

[0063] The upper portion of the body wall inner surface 421 can be disposed so as to surround the wavelength conversion layer 200. The upper portion of such a body wall inner surface 421 can be in contact with the outer peripheral surface of the wavelength conversion layer 200. Also, the lower portion of the body wall inner surface 421 can be disposed so as to surround the light-transmitting substrate 110. The lower portion of such a body wall inner surface 421 can be horizontally spaced apart from the light-transmitting substrate 110. Such a body wall inner surface 421 can be formed to be inclined so as to incline outward. For example, the upper end of the lower portion of the body wall inner surface 421 can be disposed outside the lower end.

[0064] The substrate 600 can be electrically connected to the light-emitting diode chip 100. Such a substrate 600 can have the light-emitting diode chip 100 mounted thereon. Such a substrate 600 can support the light-emitting diode chip 100, the wavelength conversion layer 200, the transparent layer 300, and the wall portion 400. Such a substrate 600 can include a base portion 610 and an electrode pad portion 620.

[0065] The base portion 610 can be connected to the electrode pad portion 620 and the wall portion 400. Such a base portion 610 can be disposed below the accommodation space. The upper surface of such a base portion 610 can extend along the horizontal direction to form the bottom surface of the substrate 600.

[0066] The electrode pad portion 620 can be supplied with power from the outside. Such an electrode pad portion 620 can be electrically connected to the light-emitting diode chip 100. The upper surface of such an electrode pad portion 620 can contact the lower surface of the light-emitting diode chip 100. The upper surface of such an electrode pad portion 620 can be disposed above the upper surface of the base portion 610. Also, the lower surface of the electrode pad portion 620 can be disposed below the lower surface of the base portion 610. At least a part of such an electrode pad portion 620 can be disposed inside the base portion 610.

[0067] Hereinafter, the operation and effects of the light-emitting diode package 1 according to the first embodiment of the present invention will be described.

[0068] The light-emitting diode package 1 can generate light of a first color with the light-emitting diode chip 100 using the current supplied from the outside. Any part of such light of the first color can travel toward the wavelength conversion layer 200, and the other part can travel toward the gap. The other part of the light of the first color can be reflected at the lower part of the inner surface 421 of the body wall. For example, the optical path of the other part of the reflected light of the first color can be directed upward by the inclination formed at the lower part of the inner surface 421 of the body wall. In this way, the amount of the light of the first color traveling toward the wavelength conversion layer 200 through the inclination formed at the lower part of the inner surface 421 of the body wall is increased, and there is an effect that the light efficiency is improved.

[0069] Such light of the first color can reach the wavelength conversion layer 200. The light of the first color reaching the wavelength conversion layer 200 can be excited by a mixture in which a first phosphor, a second phosphor, and an absorbing substance are mixed and converted into light of a second color (cyan). Such light of the second color can pass through the transparent layer 300 and be emitted to the outside of the light-emitting diode package 1.

[0070] The light-emitting diode package 1 has an effect that foreign matters and water can be prevented from penetrating into the light-emitting diode chip 100 and the wavelength conversion layer 200 disposed in the accommodation space by the transparent layer 300 closing the accommodation space with respect to the outside.

[0071] On the other hand, in addition to such a configuration, according to the second embodiment of the present invention, a light-transmitting layer 700 can be further included. Hereinafter, with further reference to FIG. 3, the second embodiment of the present invention will be described. In the description of the second embodiment, the description will be centered on the differences when compared with the above-described embodiment, and the above-described embodiment will be cited for the same description and the same reference numerals.

[0072] The light-transmitting layer 700 can transmit the light of the first color generated by the light-emitting diode chip 100 to the wavelength-converting layer 200. Such a light-transmitting layer 700 can be disposed between the light-emitting diode chip 100 and the wavelength-converting layer 200 in the vertical direction. For example, the upper surface of the light-transmitting layer 700 can be connected to the lower surface of the wavelength-converting layer 200, and the lower surface of the light-transmitting layer 700 can be connected to the upper surface of the light-emitting diode chip 100. In other words, the light-transmitting layer 700 can bond the light-emitting diode chip 100 and the wavelength-converting layer 200 to each other. Such a light-transmitting layer 700 can be named as an "adhesive layer". Also, the thickness t4 of the light-transmitting layer 700 may be thinner than the thickness t3 of the transparent layer 300. The thickness t4 of the light-transmitting layer 700 can be defined as the vertical separation distance between the upper end and the lower end of the light-transmitting layer 700.

[0073] On the other hand, in addition to such a configuration, according to the third embodiment of the present invention, the outer circumferential surface of the wavelength-converting layer 200 and the outer circumferential surface of the transparent layer 300 can be oriented so as not to be aligned with each other. Hereinafter, with further reference to FIG. 4, the third embodiment of the present invention will be described. In the description of the third embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0074] The outer circumferential surface of the wavelength-converting layer 200 and the outer circumferential surface of the transparent layer 300 can extend non-linearly along the vertical direction. For example, the outer circumferential surface of the wavelength-converting layer 200 and the outer circumferential surface of the transparent layer 300 can have a shape that forms a notch at the point where they are in contact with each other and is continuously connected.

[0075] Also, when the uppermost surface of the wavelength-converting layer 200 is projected onto the uppermost surface of the transparent layer 300 along the vertical direction, a part of the outer circumferential surface of the wavelength-converting layer 200 and a part of the outer circumferential surface of the transparent layer 300 may overlap each other, and the other part may not overlap. Also, when the light-emitting diode package 1 is viewed in the horizontal direction, the width of the wavelength-converting layer 200 in the horizontal direction and the width of the transparent layer 300 in the horizontal direction may be different from each other.

[0076] On the other hand, according to the fourth embodiment of the present invention, in addition to such a configuration, a predetermined gap can be formed between the lower part of the inner surface 421 of the body wall and the translucent substrate 110, and a joining member 500 can be disposed in the gap. Hereinafter, the fourth embodiment will be described with reference to FIG. 5. In the description of the fourth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same descriptions and the same reference numerals, the above-described embodiments will be cited.

[0077] The gap between the lower part of the inner surface 421 of the body wall and the translucent substrate 110 can have a shape in which the horizontal width becomes wider toward the upper side. The width of such a gap can be defined by the separation distance between the outer peripheral surface of the translucent substrate 110 and the lower part of the inner surface 421 of the body wall. The width (d) of the upper end of such a gap may be smaller than the thickness t1 of the translucent substrate 110.

[0078] The joining member 500 can be disposed in the gap and supported by the substrate 600. For example, the joining member 500 can be buried in the gap between the lower part of the inner surface 421 of the body wall and the translucent substrate 110. Such a joining member 500 can contact the lower part of the inner surface 421 of the body wall, the outer peripheral surface of the translucent substrate 110, and the wavelength conversion layer 200. As an example, such a joining member 500 may be made of transparent silicone.

[0079] Also, as an example, the joining member 500 may be the same substance as the carrier 220. In other words, the joining member 500 can include any one of silicone-based, epoxy-based, PMMA (polymethyl methacrylate)-based, PE (polyethylene)-based, and PS (polystyrene)-based. Also, the phosphor 210 may not be present in the joining member 500.

[0080] On the other hand, in addition to such a configuration, according to the fifth embodiment of the present invention, the outer peripheral surface of the translucent substrate 110 and the outer peripheral surface of the wavelength conversion layer 200 can be arranged side by side. Hereinafter, with further reference to FIG. 6, the fifth embodiment will be described. In the description of the fifth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0081] The outer peripheral surface of the translucent substrate 110 and the outer peripheral surface of the wavelength conversion layer 200 can continuously extend along the vertical direction. For example, the outer peripheral surface of the translucent substrate 110 and the outer peripheral surface of the wavelength conversion layer 200 can have a shape that is continuously connected without a notch.

[0082] Also, when the translucent substrate 110 and the wavelength conversion layer 200 are projected onto each other along the vertical direction, the outer peripheral surface of the translucent substrate 110 and the outer peripheral surface of the wavelength conversion layer 200 can overlap each other. Also, when the light-emitting diode package 1 is viewed in the horizontal direction, the width of the translucent substrate 110 in the horizontal direction and the width of the wavelength conversion layer 200 in the horizontal direction may be the same.

[0083] On the other hand, in addition to such a configuration, according to the sixth embodiment of the present invention, the transparent layer 300 can be laminated on the wavelength conversion layer 200 and the wall portion 400. Hereinafter, with further reference to FIG. 7, the sixth embodiment will be described. In the description of the sixth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0084] The transparent layer 300 can be laminated on the wavelength conversion layer 200 and the wall portion 400. For example, the transparent layer 300 can extend along the horizontal direction and be connected to the upper surface of the wall portion 400. Such a transparent layer 300 can have a shape that covers the upper surface of the wavelength conversion layer 200 and the upper surface of the wall portion 400.

[0085] In addition, the outer circumferential surface of the transparent layer 300 can be arranged flush with the outer circumferential surface of the wall portion 400. The outer circumferential surface of the transparent layer 300 can continuously extend along the vertical direction of the outer circumferential surface of the wall portion 400. For example, the outer circumferential surface of the transparent layer 300 and the outer circumferential surface of the wall portion 400 can have a shape that is continuously connected without a notch.

[0086] In addition, when the transparent layer 300 and the wall portion 400 are projected onto each other along the vertical direction, the outer circumferential surface of the transparent layer 300 and the outer circumferential surface of the wall portion 400 can overlap each other. Also, when the light-emitting diode package 1 is viewed in the horizontal direction, the width of the transparent layer 300 in the horizontal direction and the width of the wall portion 400 in the horizontal direction may be the same.

[0087] On the other hand, in addition to such a configuration, according to the seventh embodiment of the present invention, unevenness 301a can be formed on the surface 301 of the transparent layer. Hereinafter, with further reference to FIG. 8, the seventh embodiment will be described. In the description of the seventh embodiment, the description will focus on the differences when compared with the above-described embodiments, and for the same descriptions and the same reference numerals, the above-described embodiments will be cited.

[0088] The surface 301 of the transparent layer can be defined as the upper surface of the transparent layer 300. Such a surface 301 of the transparent layer can be exposed to the outside of the light-emitting diode package 1. The unevenness 301a formed on such a surface 301 of the transparent layer can be arranged along the horizontal direction. Through such unevenness 301a, it is possible to minimize the total reflection of the second-color light on the surface 301 of the transparent layer. In this way, the unevenness 301a has the effect of maximizing the light extraction efficiency of the light-emitting diode package 1.

[0089] On the other hand, in addition to such a configuration, according to the eighth embodiment of the present invention, a curvature can be formed on the surface 301 of the transparent layer. Hereinafter, with further reference to FIG. 9, the eighth embodiment will be described. In the description of the eighth embodiment, the description will focus on the differences when compared with the above-described embodiments, and for the same descriptions and the same reference numerals, the above-described embodiments will be cited.

[0090] The surface 301 of the transparent layer can have a curved surface shape that bulges outward. For example, when viewing the light-emitting diode package 1 in the horizontal direction, the surface 301 of the transparent layer can have an upwardly bulging shape. In other words, the surface 301 of the transparent layer can have an arch shape in which the horizontal width increases as it goes downward. Through such a shape of the surface 301 of the transparent layer, total reflection of the light of the second color on the surface 301 of the transparent layer can be minimized. Thus, the surface 301 of the transparent layer having a curved surface shape has the effect of maximizing the light extraction efficiency of the light-emitting diode package 1.

[0091] On the other hand, in addition to such a configuration, according to the ninth embodiment of the present invention, a part of the upper surface of the transparent layer 300 of the light-emitting diode package 1 can have a structure that is recessed in the direction of the light-emitting diode chip 100. Hereinafter, with further reference to FIG. 10, the ninth embodiment will be described. In the description of the ninth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0092] Referring to FIG. 10, since a part of the upper surface of the transparent layer 300 has a structure that is recessed in the direction of the light-emitting diode chip 100, there is an effect of improving light extraction, increasing the outer surface area of the transparent layer, and lengthening the moisture permeation path.

[0093] One or more of a convex portion 301c and a concave portion 301b can be formed on the upper portion of the transparent layer 300.

[0094] The convex portion 301c of the transparent layer 300 is formed as a curved surface that bulges upward at the upper edge of the transparent layer 300, so that external impact and stress can be dispersed to prevent breakage. Further, since the convex portion 301c is disposed at a position overlapping the wall portion 400 in the vertical direction, the thickness of the transparent layer 300 increases at the upper portion of the wall portion 400, which is effective for preventing moisture permeation.

[0095] The convex portion 301c can be formed such that the curvature at the upper part is smaller than the curvature of the concave portion 301b which is the recessed part of the transparent layer 300. Further, the convex portion 301c can be arranged adjacent to the edge of the light emitting diode package 1 and spaced apart from the central axis L1. The distance between the line L2 parallel to the central axis L1 passing through the apex of the convex portion 301c and the central axis L1 is larger than half of the distance between the outer surface L3 arranged at the edge of the substrate 600 and the central axis L1, and may be smaller than the distance between the outer surface L3 of the substrate 600 and the central axis L1.

[0096] From a position horizontally parallel to the concave portion 301b to the apex of the convex portion 301c, the width of the transparent layer 300 may gradually decrease upward. As the width of the transparent layer 300 decreases, the deviation of the light sensitivity and the chromaticity deviation between the central portion and the peripheral portion per unit area of the light emitting diode package 1 can be reduced. In other words, the inclination of the outer surface of the transparent layer 300 from the concave portion 301b to the convex portion 301c may be gentler than the inclination of the inner surface of the inclined wall 411. Therefore, the extraction of the side light of the light emitting diode package 1 is advantageous.

[0097] The transparent layer 300 can include an inclined surface on the upper edge side, a first surface 301c1 from the convex portion 301c to the concave portion 301b, and a second surface (the edge side surface of the outermost shell) 301c2 which is the outer surface of the substrate. The first surface 301c1 and the second surface 301c2 may have different inclinations from each other. The outer surface 301c2 of the substrate can extend in the vertical direction. On the other hand, the transparent layer 300 can further include a third surface 301c3 parallel to the substrate. The inclination of the second surface 301c2 may be larger than the inclination of the first surface 301c1 and smaller than the inclination of the third surface 301c3.

[0098] The inclination of the second surface 301c2 of the convex portion 301c can be formed to be steeper than the inclination of the inclined surface 410a of the wall portion 400. Therefore, since the inclined surface 410a of the wall portion 400 guides the light so that the light generated by the light emitting diode chip 100 can be directed to the second surface 301c2 of the convex portion 301c, the difference in light intensity between the convex portion 301c and the concave portion 301b of the transparent layer 300 can be reduced.

[0099] The thickness h1 of the third surface 301c3 of the transparent layer 300 may be greater than the distance h2 from the center point P1 of the recess 301b to the wavelength conversion layer 200. Also, the point P2 where the third surface 301c3 and the second surface 301c2 are connected can be arranged at a lower level than the center point P1 of the recess 301b, so that a wide emission angle can be realized. In a partial region of the transparent layer 300 located directly above the wavelength conversion layer 200, the thickness from the lower surface of the transparent layer 300 upward can increase as it goes from the center of the transparent layer 300 toward the lower wall portion 400 side (toward the edge side in the horizontal direction).

[0100] When including a single light-emitting diode chip 100, the center point P1 of the recess 301b can be arranged to vertically overlap the light-emitting diode chip 100. Thus, light extraction can be balanced on both sides.

[0101] When including a plurality of diode chips 100, the center point P1 of the recess 301b is arranged between the light-emitting diode chips 100, and light can be guided by the surface of the recess 301b arranged on the upper surface of each light-emitting diode chip 100.

[0102] On the other hand, in addition to such a configuration, according to the tenth embodiment of the present invention, the light-emitting device 10 can be applied to a vehicle lamp. Hereinafter, with further reference to FIG. 11, the tenth embodiment will be described. In the description of the tenth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0103] Referring to FIG. 11, the vehicle lamp 20 can include a combination lamp 23, and in addition, can further include a main lamp 21. The vehicle lamp 20 can be applied to various parts of a vehicle such as a headlight, a backlight, and a side mirror light.

[0104] The main lamp 21 may be the main headlamp in the vehicle lamp 20. As an example, when the vehicle lamp 20 is used as a headlamp, it can also serve as a headlamp that illuminates the front of the vehicle.

[0105] The combination lamp 23 can perform two or more functions including the light emitting device 10. As an example, when the vehicle lamp 20 is used as a headlamp, the combination lamp 23 can perform the functions of a daytime running light (DRL) and a direction indicator lamp.

[0106] In FIG. 11, the combination lamp 23 is illustrated as including the light emitting device 10, but the main lamp 21 can also be configured to use the light emitting device 10 that utilizes light emitting diodes or the like.

[0107] On the other hand, in addition to such a configuration, according to the 11th embodiment of the present invention, an optical element 2210 is disposed at a position corresponding to each light emitting element 2160 above the light emitting element 2160, and the light emitted from the plurality of light emitting elements 2160 and directed toward the optical element 2210 can be reflected and guided to the side surface, and can be used for a display device or a display apparatus. Hereinafter, with further reference to FIG. 12, the 11th embodiment will be described. In the description of the 11th embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0108] As another embodiment, an optical element 2210 is disposed at a position corresponding to each light emitting element 2160 in the vertical direction above the light emitting element 2160, and the light emitted from the plurality of light emitting elements 2160 and directed toward the optical element 2210 can be reflected and guided to the side surface. The optical elements 2210 corresponding to the respective light emitting elements 2160 can be arranged to be spaced apart from each other. Since they are respectively arranged at the upper positions of the light emitting elements 2160 where the light is emitted in a centered manner, the light dispersion efficiency can be increased, and the occurrence of luminous intensity deviation and chromaticity deviation in a unit area can be prevented. Such a light emitting element may be the light emitting diode package in the above-described embodiment.

[0109] The optical element 2210 can be arranged to be vertically separated from the light-emitting element 2160, and a substance having a refractive index lower than that of the optical element 2210 can be arranged in part or all of the separated space. Thereby, the light extraction efficiency can be improved. The substance having a low refractive index may be silicon, air, SiO2, TiO2, epoxy, polymer, or the like.

[0110] As another form, although not shown, the optical element 2210 can be arranged in direct contact with the light-emitting element 2160. As an example, the optical element 2210 can be arranged on the upper surface of the transparent layer 300 in the embodiment implemented above. By covering at least a part of the region of the transparent layer 300 with the optical element 2210, when cracks occur on the surface of the transparent layer 300, moisture can be prevented from penetrating through the cracks, and a long moisture permeation path can be ensured.

[0111] The shape of the optical element 2210 can be formed in a plate shape with a uniform thickness so that the optical element 2210 can have a uniform reflectance at any point. Further, the optical element 2210 can have a thickness such that its central portion is the thickest and becomes thinner as it moves away from the central portion. Thereby, the reflection efficiency for various incident lights can be increased.

[0112] On the other hand, in addition to such a configuration, according to the twelfth embodiment of the present invention, the light-emitting element can be applied to a display device. Hereinafter, with further reference to FIG. 13, the twelfth embodiment will be described. In the description of the twelfth embodiment, the description will be centered on the differences when compared with the above-described embodiments, and for the same description and the same reference numerals, the above-described embodiments will be cited.

[0113] The display device of this embodiment can include a display panel 2110, a backlight unit that provides light to the display panel 2110, and a panel guide that supports the lower edge of the display panel 2110.

[0114] The display panel 2110 is not particularly limited and may be, for example, a liquid crystal display panel including a liquid crystal layer. A gate driving PCB for supplying a driving signal to the gate line can be arranged at the edge of the display panel 2110. Here, the gate driving PCB is not provided on a separate PCB and can be formed on the thin film transistor substrate.

[0115] The display device of this embodiment can be used as a backlight unit and can include a light source module including at least one substrate and a plurality of light emitting elements 2160. Further, the backlight unit can further include a bottom cover 2180, a reflective sheet 2170, a diffusion plate 2131, and one or more optical sheets 2130.

[0116] The bottom cover 2180 is opened at the top and can support the substrate, the light emitting elements 2160, the reflective sheet 2170, the diffusion plate 2131, and one or more optical sheets 2130. Also, the bottom cover 2180 can be combined with a panel guide. The substrate is located below the reflective sheet 2170 and can be arranged in a shape surrounded by the reflective sheet 2170. However, it is not limited thereto, and when a reflective substance is coated on the surface, it can also be located on the reflective sheet 2170. Further, the substrate can be formed in a plurality, and the plurality of substrates can be arranged side by side, but it is not limited thereto, and it can also be formed on a single substrate.

[0117] The light emitting elements 2160 can include at least one of the light emitting elements according to the embodiments of the present invention described above. The light emitting elements 2160 can be regularly arranged in a certain pattern on the substrate. Also, an optical element 2210 is arranged on each of the light emitting elements 2160, and the uniformity of the light emitted from one or more light emitting elements 2160 can be improved.

[0118] The diffusion plate 2131 and one or more optical sheets 2130 are located on the light-emitting element 2160. The light emitted from the light-emitting element 2160 can be supplied to the display panel 2110 in the form of a surface light source through the diffusion plate 2131 and one or more optical sheets 2130. As described above, the embodiments of the present invention have been described as specific embodiments, but this is merely an example, and the present invention is not limited thereto, and should be construed as having the broadest scope based on the technical idea disclosed in this specification. Those skilled in the art can combine / replace the disclosed embodiments to implement patterns of shapes not disclosed, but this also does not deviate from the scope of the present invention. In addition, those skilled in the art can easily change or modify the disclosed embodiments based on this specification, and it is obvious that such changes or modifications also belong to the scope of rights of the present invention.

Explanation of Reference Numerals

[0119] 10 Light-emitting device 20 Lamp 21 Main lamp 23 Combination lamp 100 Light-emitting diode chip 110 Translucent substrate 111 Outer peripheral surface 112 Pattern bottom surface 120 Semiconductor layer 200 Wavelength conversion layer 210 Phosphor 220 Carrier 300 Transparent layer 301 Surface 400 Wall portion 401 Inner surface 411 Inclined wall inner surface 420 Body wall portion 421 Body wall inner surface 470 Wavelength region 500 Joining member 600 Substrate 610 Base 620 Electrode pad portion 700 Translucent layer 2110 Display panel 2130 Optical Sheet 2131 Diffusion Plate 2160 Light-Emitting Element 2170 Reflective Sheet 2180 Bottom Cover 2210 Optical Element

Claims

1. A light-emitting diode chip (100) that generates light of a first color, A wavelength conversion layer (200) disposed above the light-emitting diode chip (100) and excited by the light of the first color to generate light of a second color, A transparent layer (300) disposed above the wavelength conversion layer (200), A wall portion (400) in which an accommodation space for accommodating the light-emitting diode chip (100) and the wavelength conversion layer (200) is formed, Including, The wall portion (400) has an inner surface (401) surrounding the accommodation space, The transparent layer (300) is connected to the inner surface of the wall portion (400) so that the accommodation space is closed to the outside, a light-emitting diode package (1).

2. The light-emitting diode chip (100) includes a semiconductor layer (120) and a light-transmitting substrate (110) disposed above the semiconductor layer (120), The thickness (t3) of the transparent layer (300) is smaller than the thickness (t1) of the light-transmitting substrate (110), the light-emitting diode package (1) according to claim 1.

3. The thickness (t1) of the light-transmitting substrate (110) is 100 μm to 150 μm, the light-emitting diode package (1) according to claim 2.

4. The thickness (t3) of the transparent layer (300) is 30 μm to 50 μm, the light-emitting diode package (1) according to claim 2.

5. The light-emitting diode chip (100) includes a semiconductor layer (120) and a light-transmitting substrate (110) disposed above the semiconductor layer (120), The thickness (t1) of the light-transmitting substrate (110) is smaller than the thickness (t2) of the wavelength conversion layer 200), the light-emitting diode package (1) according to claim 1.

6. The thickness (t2) of the wavelength conversion layer (200) is 120 μm to 200 μm, the light-emitting diode package (1) according to claim 5.

7. The wall portion (400) intersects an edge extension plane (p) that is a virtual plane extending along the horizontal direction from an edge (a) at the lower end of the transparent layer (300), the light-emitting diode package (1) according to claim 1.

8. An inclined surface (410a) inclined downward toward the outside is provided at the upper end of the wall portion (400), The inclined surface (410a) intersects the edge extension plane (p) between the upper end and the lower end, the light-emitting diode package (1) according to claim 7.

9. At the upper end of the wall portion (400), an inclined surface (410a) inclined downward toward the outside is provided. The wavelength conversion layer (200) includes a plurality of phosphors (210). In the vertical direction, among the plurality of phosphors (210), the phosphor (210) disposed at the uppermost end is disposed between the upper end and the lower end of the inclined surface (410a). The light-emitting diode package (1) according to claim 1.

10. The outer peripheral surface of the wavelength conversion layer (200) and the outer peripheral surface of the transparent layer (300) continuously extend without a notch. The light-emitting diode package (1) according to claim 1.

11. The light-emitting diode chip (100) includes a semiconductor layer (120) and a light-transmitting substrate (110) disposed above the semiconductor layer (120). The outer peripheral surface of the wavelength conversion layer (200) and the outer peripheral surface of the light-transmitting substrate (110) continuously extend without a notch. The light-emitting diode package (1) according to claim 1.

12. At least a part of the outer peripheral surface of the light-emitting diode chip (100) is spaced apart from the inner surface (401) of the wall portion (400). The light-emitting diode package (1) according to claim 1.

13. The light-emitting diode chip (100) includes a semiconductor layer (120) and a light-transmitting substrate (110) disposed above the semiconductor layer (120). The thickness (t1) of the light-transmitting substrate (110) is greater than the horizontal separation distance between the upper end of the outer peripheral surface of the light-transmitting substrate (110) and the upper end of the inner surface (401) of the wall portion (400). The light-emitting diode package (1) according to claim 12.

14. It further includes a light-transmitting layer (700) for transmitting the light of the first color to the wavelength conversion layer (200). The light-transmitting layer (700) is disposed between the light-emitting diode chip (100) and the wavelength conversion layer (200). The light-emitting diode package (1) according to claim 1.

15. The thickness (t4) of the light-transmitting layer (700) is smaller than the thickness (t3) of the transparent layer (300). The light-emitting diode package (1) according to claim 14.

16. The wavelength conversion layer (200) is formed of any one or more of PIS (phosphor in silicone), PIG (phosphor in glass), and Si (silicone). The light-emitting diode package (1) according to claim 1.

17. A light-emitting diode chip (100) that generates light of a first color, A wavelength conversion layer (200) disposed above the light-emitting diode chip (100) and excited by the light of the first color to generate light of a second color, A wall portion (400) in which an accommodation space for accommodating the light-emitting diode chip (100) and the wavelength conversion layer (200) is formed, A transparent layer (300) disposed above the wavelength conversion layer (200) and the wall portion (400) so that the accommodation space is closed to the outside, comprising The wall portion (400) includes an inner surface (401) surrounding the accommodation space, An outer circumferential surface of the transparent layer (300) is disposed outside the inner surface (401) of the wall portion (400). A light-emitting diode package (1).

18. The light-emitting diode package (1) according to claim 17, wherein an outer circumferential surface of the transparent layer (300) and an outer circumferential surface of the wall portion (400) continuously extend without notches.

19. The light-emitting diode package (1) according to claim 17, wherein a plurality of irregularities (301a) are formed on a surface (301) of the transparent layer (300) exposed to the outside.

20. A light-emitting diode chip (100) that generates light of a first color, A wavelength conversion layer (200) disposed above the light-emitting diode chip (100) and excited by the light of the first color to generate light of a second color, A wall portion (400) in which an accommodation space for accommodating the light-emitting diode chip (100) and the wavelength conversion layer (200) is formed, A transparent layer (300) disposed above the wavelength conversion layer (200) and the wall portion (400) so that the accommodation space is closed to the outside, comprising A light-emitting diode package (1), wherein a surface (301) of the transparent layer (300) has a curved surface shape that bulges outward.

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