Wafer transfer device, wafer loading / unloading device, and control method

Abstract

Relating to the technical field of wafer inspection, a wafer transfer device, a wafer loading / unloading device and a control method. The wafer transfer device includes a suction mechanism and a lifting mechanism capable of moving the suction mechanism in the vertical direction in conjunction. The suction mechanism includes a first support frame, a plurality of suction components, and a plurality of locking components. The first support frame is annular and connected to the lifting mechanism. The plurality of suction components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame. The plurality of suction components are provided to simultaneously provide a suction force to the bottom of the wafer, thereby closely attaching the wafer to the heat sink. The plurality of locking components are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame. The plurality of locking components are provided to receive control and simultaneously lock the heat sink on which the wafer is placed and provide a suction force to the heat sink, thereby avoiding the wafer placed on the heat sink from falling off during the process of moving according to the suction mechanism. By sucking both the wafer and the heat sink, the stability of the wafer and the heat sink can be guaranteed during the transfer process.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer inspection, and particularly to a wafer transfer device, a wafer loading / unloading device, and a control method.

Background Art

[0002] In the process of performing wafer-level aging inspection on a wafer, it is necessary to transfer the wafer from inside the wafer cassette to the wafer-level aging inspection device, and after the wafer-level aging inspection of the wafer is completed, it is necessary to transfer the wafer from the wafer-level aging inspection device to the wafer cassette. Therefore, it is necessary to provide a wafer transfer device to transfer the wafer. When the wafer transfer device directly clamps and picks up the wafer, the wafer is likely to bend, deform, or be damaged. Therefore, it is necessary to place the wafer on a heat sink and directly transfer the heat sink on which the wafer is placed using the wafer transfer device, thereby avoiding the wafer from bending, deforming, or being damaged. However, in the process of transferring in such a transfer method, the wafer is also likely to slide off the heat sink, and the heat sink is likely to move or slide off the wafer transfer device. Therefore, it is urgent to design a wafer transfer device that can avoid deformation and damage of the wafer and ensure the stability of the heat sink transfer.

[0003] Also, in the prior art, generally, after clamping the wafer in advance using a portable wafer clamp jig, the entire clamp jig carrying the wafer is sent into the aging inspection device for aging inspection. However, the portable wafer clamp jig includes a heat sink and a probe plate. Even if the wafer size increases, if this type of clamp jig is still used, a clamp jig with a large size is required, which not only increases the difficulty of the operation but also slightly reduces the accuracy of the inspection.

[0004] When the portable wafer clamp fixture is not used for wafer fixing and loading, the inspection chamber is generally fixedly provided in the aging inspection device, and the wafer is grasped and loaded using a manipulator, and the wafer is directly transferred from the wafer case into the wafer-level aging inspection device for wafer-level aging inspection. On the other hand, when the wafer is transported by directly pinching and picking up the wafer, the wafer is likely to bend, deform or break. In order to avoid such a situation, first, the wafer needs to be placed on the heat sink, and it is necessary to directly transport the heat sink on which the wafer is placed using a wafer transport device. However, when using such a transport method, the loading step is complicated, and there are drawbacks such as the enlargement of the loading device. Therefore, it is also an urgent task to provide a wafer loading / unloading method with a simple loading step, a short transport distance and high reliability.

Summary of the Invention

[0005] The first object of the first aspect of the present invention is to provide a wafer transport device to solve the technical problem of the prior art that the wafer is likely to fall off and deform during the process of transporting the wafer by the wafer transport device.

[0006] The second object of the first aspect of the present invention is to improve the stability of the heat sink locking.

[0007] The third object of the first aspect of the present invention is to provide a wafer loading / unloading device.

[0008] The first object of the second aspect of the present invention is to provide a control method for a wafer loading / unloading device to solve the technical problems of the prior art that the steps of wafer loading are complicated and the loading device becomes large.

[0009] The second object of the second aspect of the present invention is to improve the stability during the process of transporting the wafer.

[0010] In particular, according to a first aspect of the present invention, there is provided a wafer transfer device for transferring a heat sink on which a wafer is placed, the wafer transfer device including a suction mechanism and a lifting mechanism capable of moving the suction mechanism in a vertical direction in conjunction with each other, the suction mechanism including: a first support frame that is annular and connected to the lifting mechanism; a plurality of suction components that are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, and that simultaneously provide a suction force to the bottom of the wafer, thereby being provided so as to bring the wafer into close contact with the heat sink; and a plurality of locking components that are arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, and that, upon receiving control, simultaneously lock the heat sink on which the wafer is placed and provide a suction force to the heat sink, thereby preventing the heat sink on which the wafer is placed from falling off during the process of moving according to the suction mechanism.

[0011] In particular, the present invention further includes: the wafer transfer device for placing or removing the heat sink on which the wafer is placed into or from an inspection chamber of a wafer-level aging inspection device; and a heat sink inspection device provided on a side of the wafer transfer device and having a mounting base for placing the heat sink, the mounting base being provided so as to extend out from the heat sink inspection device upon receiving control, thereby enabling the wafer transfer device to place the heat sink on which the wafer is placed on the mounting base or remove the heat sink on which the wafer is placed from the mounting base. A wafer acquisition device provided on the side of the heat sink inspection device, which is configured to take out a wafer from inside a wafer case, calibrate the position of the wafer, and then place the wafer on the heat sink positioned on the mounting table. Also, the wafer acquisition device is configured to take out the wafer on the heat sink and send it into the wafer case, and provides a wafer loading / unloading device including the wafer acquisition device.

[0012] In particular, according to a second aspect of the present invention, After placing the heat sink with the target wafer thereon on the mounting table of the heat sink inspection device, controlling the mounting table to project it laterally toward the wafer level aging inspection device; Controlling the suction mechanism to clamp the heat sink on which the target wafer is placed; After controlling the mounting table to return, controlling the pressure-resistant platform of the wafer level aging inspection device to project it laterally toward the heat sink inspection device; Controlling the suction mechanism to place the heat sink on which the target wafer is placed inside the lower sealing cover of the pressure-resistant platform; After controlling the pressure-resistant platform to return, controlling the lower sealing cover to dock with the cover plate assembly to form an inspection chamber, and thereby performing a wafer level aging inspection, provides a control method for the wafer loading / unloading device.

[0013] According to the embodiments of some examples of the present invention, the bottom of the wafer is adsorbed by a plurality of adsorption components, and the wafer is brought into close contact with the heat sink, thereby preventing the wafer from moving and falling off. At the same time, a plurality of locking components lock the heat sink on which the wafer is placed, and the locking components can also provide an adsorption force to the heat sink, thereby avoiding falling off during the process of transporting the heat sink and improving the stability during the movement of the heat sink. The present invention not only adsorbs the wafer, but also adsorbs the heat sink. By adsorbing both, the stability during the process of transporting the wafer and the heat sink is guaranteed, and it is possible to avoid the wafer and the heat sink falling off from the adsorption mechanism.

[0014] Furthermore, in the present invention, after the controller simultaneously receives the signals fed back by the plurality of adsorption components in contact with the heat sink, the controller controls the first power source to interlock and rotate the annular connection components, thereby interlocking the sliding assembly and interlocking and moving the locking components, so that the locking components are provided to lock the heat sink. The fact that the plurality of adsorption components simultaneously feedback that they are in contact with the heat sink indicates that the heat sink is in a horizontal state and not inclined, and there is no need to adjust the position of the heat sink. It is also possible to directly control the plurality of locking components to lock the heat sink, avoiding the instability of locking due to the inclination of the heat sink and the heat sink slipping off, and improving the stability of locking the heat sink.

[0015] According to some embodiments of the present invention, in the process of transporting the heat sink on which the target wafer is placed from the heat sink inspection device to the wafer-level aging inspection device, after placing the heat sink on which the target wafer is placed on the mounting table of the heat sink inspection device, first control the mounting table of the heat sink inspection device to protrude laterally towards the wafer-level aging inspection device, then control the suction mechanism to clamp the heat sink, and then control the mounting table to return. After that, control the pressure-resistant platform of the wafer-level aging inspection device to protrude laterally towards the heat sink inspection device, then control the suction mechanism to place the heat sink into the lower sealing cover of the pressure-resistant platform, and finally control the pressure-resistant platform to return. Then control the lower sealing cover to dock with the cover plate assembly to form an inspection chamber, and thereby perform wafer-level aging inspection. The above technical solution combines the method of the mounting table of the heat sink inspection device and the pressure-resistant platform of the wafer-level aging inspection device protruding laterally respectively, and the movement of the suction mechanism, so as to realize the transportation of the heat sink, simplify the steps of wafer loading, shorten the transportation distance of the wafer, and thereby make the loading device more compact.

[0016] Furthermore, in the step of controlling the suction mechanism to clamp the heat sink on which the target wafer is placed, first confirm that any locking component of the suction mechanism is in a released state, then control the suction mechanism to move downward, then control any suction component of the suction mechanism to suck on the target wafer, then control any locking component to clamp the heat sink, and finally control any locking component to suck on the heat sink. That is, the suction mechanism not only clamps the heat sink on which the target wafer is placed, but also sucks the target wafer and the heat sink at the same time, thereby improving the stability in the process of transporting the heat sink on which the target wafer is placed, and avoiding the target wafer from falling, bending or being damaged during the transfer process.

[0017] From the following detailed description of specific embodiments of the present invention with reference to the accompanying drawings, the above and other objects, advantages, and features of the present invention will become more apparent to those skilled in the art.

Brief Description of the Drawings

[0018] Some specific embodiments of the present invention will be described in detail below with reference to the drawings in an illustrative and non-limiting manner. In the figures, the same reference numerals represent the same or similar parts or components. It should be understood by those skilled in the art that these figures are not necessarily drawn to scale. Here,

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Embodiments for Carrying Out the Invention

[0019] Hereinafter, embodiments of the present invention will be described in detail, and examples of the embodiments are shown in the drawings. In addition, the same or similar components or components having the same or similar functions are represented by the same or similar reference numerals throughout. The embodiments described with reference to the following drawings are exemplary and are provided for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

[0020] In the description of the present invention, the directions or positional relationships indicated by terms such as "upper", "lower", "left", "right", etc. are based on the directions or positional relationships shown in the drawings, and are for the purpose of simplifying the description of the present invention. It should be understood that the device or component in question is not necessarily provided or configured and operated in a specific direction, and thus should not be construed as a limitation to the present invention.

[0021] The terms "first" and "second" are merely used for description and cannot be construed as indicating relative importance, implicitly or explicitly, or implicitly indicating the number of technical features in question. Thus, the features defined by "first" and "second" may optionally include at least one such feature, i.e., one or more such features. In the description of the present invention, the meaning of "a plurality" is at least two, such as two, three, etc., unless specifically and explicitly limited otherwise. When a feature "includes" one or some of the features covered thereby, this means, unless otherwise specified, that it does not exclude other features and may further include other features.

[0022] Unless otherwise specifically defined and limited, terms such as "connection" and "attachment" are to be understood in a broad sense. Unless otherwise specifically limited, for example, it may be fixedly connected, removably connected, or integrated, and may be a mechanical connection, an electrical connection, a direct connection, or an indirect connection through an intermediate medium, or may be the internal communication between two components or the interaction between two components. Those skilled in the art will be able to understand the specific meaning of these terms in the context of the present invention according to the specific situation.

[0023] Unless otherwise specifically limited, all terms (including technical terms and scientific terms) used in the description of this embodiment have the same meaning as commonly understood by those skilled in the art.

[0024] FIG. 1 is a schematic structural diagram of a wafer transfer device 100A according to an embodiment of the present invention, FIG. 2 is a schematic enlarged view of an adsorption mechanism 20A in the wafer transfer device shown in FIG. 1, and FIG. 3 is a schematic plan view of the adsorption mechanism 20A in the wafer transfer device 100A shown in FIG. 1. As shown in FIGS. 1 to 3, in a specific embodiment, the wafer transfer device 100A is used to transfer a heat sink 200A on which a wafer is placed. The wafer transfer device 100A includes an adsorption mechanism 20A and a lifting mechanism 10A that can move the adsorption mechanism 20A in the vertical direction in conjunction with each other. The adsorption mechanism 20A includes a first support frame 21A, a plurality of adsorption components 23A, and a plurality of locking components 22A. However, the first support frame 21A is annular and is connected to the lifting mechanism 10A. The plurality of adsorption components 23A are arranged at intervals along the circumferential direction of the first support frame 21A and are connected to the first support frame 21A. The plurality of adsorption components 23A are provided to simultaneously provide an adsorption force to the bottom of the wafer, thereby bringing the wafer into close contact with the heat sink 200A. The plurality of locking components 22A are arranged at intervals along the circumferential direction of the first support frame 21A and are connected to the first support frame 21A. The plurality of locking components 22A are provided to be controlled to simultaneously lock the heat sink 200A on which the wafer is placed and provide an adsorption force to the heat sink 200A, thereby preventing the heat sink 200A on which the wafer is placed from falling off during the process of moving according to the adsorption mechanism 20A. Here, the plurality of adsorption components 23A and the plurality of locking components 22A are arranged offset from each other, so that the plurality of locking components 22A and the plurality of adsorption components 23A are uniformly arranged on the first support frame 21A, respectively. The lifting mechanism 10A can move the adsorption mechanism 20A up and down in conjunction with each other.

[0025] In this embodiment, the bottom of the wafer is adsorbed by a plurality of adsorption components 23A, and the wafer is brought into close contact with the heat sink 200A, so that the movement and dropping of the wafer can be prevented. At the same time, a plurality of locking components 22A lock the heat sink 200A on which the wafer is placed. The locking components 22A can also provide an adsorption force to the heat sink 200A, thereby avoiding dropping during the process of transporting the heat sink 200A and improving the stability during the movement of the heat sink 200A. The present invention not only adsorbs the wafer, but also adsorbs the heat sink 200A. By adsorbing both, the stability during the process of transporting the wafer and the heat sink 200A is guaranteed, and it is possible to avoid the wafer and the heat sink 200A dropping from the adsorption mechanism 20A.

[0026] In this embodiment, the wafer transfer device 100A further includes a plurality of sliding assemblies 30A. Each sliding assembly 30A corresponds to one locking component 22A, and the locking component 22A is slidably connected to the first support frame 21A, so that the locking component 22A can slide along the radial direction of the first support frame 21A under control, and is used to switch between a first position locked to the heat sink 200A and a second position spaced apart from the heat sink 200A. It may be understood as follows. All the sliding assemblies 30A simultaneously move the corresponding locking components 22A in conjunction towards the central position of the first support frame 21A, so that the heat sink 200A can be supported simultaneously. At this time, the locking component 22A is located at the first position. When all the sliding assemblies 30A simultaneously move the corresponding locking components 22A back to their original positions, that is, when they move away from the central position of the first support frame 21A, the support for the heat sink 200A is removed. At this time, the locking component 22A is located at the second position.

[0027] FIG. 4 is a schematic structural diagram of the locking component 22A and the sliding assembly 30A according to an embodiment of the present invention, and FIG. 5 is a schematic perspective view of the locking component 22A according to an embodiment of the present invention. As shown in FIGS. 4 and 5, and as also referred to in FIGS. 1 to 3, the locking component 22A is L-shaped and has a vertical portion 221A and a horizontal portion 222A. The horizontal portion 222A is provided to abut against the bottom of the heat sink 200A when the locking component 22A moves toward the center of the first support frame 21A, thereby supporting the heat sink 200A. As can be seen from FIG. 2, a plurality of cuts 240A are provided on the outer peripheral side of the heat sink 200A, each cut 240A corresponding to one locking component 22A. The locking component 22A moves from the cut 240A to the horizontal portion 222A and is located below the heat sink 200A, thereby being able to support the heat sink 200A. When the horizontal portion 222A of the locking component 22A moves to the cut 240A, the support for the heat sink 200A is removed.

[0028] In this embodiment, a first gas flow path 223A is provided inside the locking component 22A, thereby adsorbing the heat sink 200A when abutting against the bottom of the heat sink 200A. As can be seen from FIG. 5, the uppermost part of the horizontal portion 222A has a suction port 224A communicating with the first gas flow path 223A, and the heat sink 200A is adsorbed by the suction port 224A. In this embodiment, not only the wafer is adsorbed, but also the bottom of the heat sink 200A is adsorbed, thereby avoiding the movement or slipping of the heat sink 200A.

[0029] FIG. 6 is a schematic enlarged view of the drive assembly 40A according to an embodiment of the present invention. As shown in FIG. 6, in this embodiment, the wafer transfer device 100A further includes a drive assembly 40A. The drive assembly 40A is provided on the first support frame 21A and cooperates with a plurality of locking components 22A and sliding assemblies 30A, thereby being controlled to simultaneously interlock the locking components 22A to switch between the first position and the second position. That is, the drive assembly 40A can simultaneously drive a plurality of sliding assemblies 30A to interlock and move the corresponding locking components 22A.

[0030] In this embodiment, the drive assembly 40A includes at least one first power source 41A and an annular connecting component 42A. The first power source 41A is attached to the uppermost part of the first support frame 21A. The annular connecting component 42A is attached to the first support frame 21A and is arranged concentrically with the first support frame 21A. The annular connecting component 42A is connected to the first power source 41A and cooperates with a plurality of sliding assemblies 30A. The annular connecting component 42A is rotated in conjunction with the first power source 41A, thereby simultaneously causing a plurality of sliding assemblies 30A to slide in conjunction, and thereby simultaneously causing a plurality of locking components 22A to move in conjunction. Here, the first power source 41A is a pen cylinder. In other embodiments, as the first power source 41A, other components, for example, a rack and pinion structure, may be used. In this embodiment, the number of the first power sources 41A is two, and the two first power sources 41A are arranged on the first support frame 21A at intervals. In other embodiments, the number of the first power sources 41A may be set based on specific design requirements. For example, it may be set based on the diameter of the annular connecting component 42A. The larger the diameter of the annular connecting component 42A, the more the number of the first power sources 41A; the smaller the diameter of the annular connecting component 42A, the fewer the number of the first power sources 41A.

[0031] As shown in FIGS. 4 and 6, in this embodiment, the sliding assembly 30A includes an upper sliding component 31A connected to the locking component 22A and a lower sliding component 32A connected to the first support frame 21A. A contact portion 34A is provided on the upper sliding component 31A. A plurality of first protrusions 421A having inclined surfaces 422A are provided on the annular connection component 42A. Each first protrusion 421A corresponds to the contact portion 34A of one sliding assembly 30A. The first protrusion 421A is provided to slide the contact portion 34A along the inclined surface 422A during the rotation of the annular connection component 42A, thereby driving the upper sliding component 31A to slide along the lower sliding component 32A. That is, the first protrusion 421A is moved during the rotation of the annular connection component 42A. At this time, the contact portion 34A moves upward or downward along the inclined surface 422A. When the annular connection component 42A rotates clockwise, the contact portion 34A moves downward along the inclined surface 422A, and the upper sliding component 31A drives the locking component 22A and moves toward the center position of the first support frame 21A until it reaches the first position. When the annular connection component 42A rotates counterclockwise, the contact portion 34A moves upward along the inclined surface 422A, and the upper sliding component 31A drives the locking portion and moves away from the center position of the first support frame 21A until it reaches the second position. This embodiment realizes the movement of the locking portion by skillfully providing the protrusion with the inclined surface 422A, and has a simple structure and is easy to realize. Here, a plurality of second protrusions 423A are further provided on the annular connection component 42A. Grooves are provided on each second protrusion 423A. A connection component that cooperates with the groove is connected to each second protrusion 423A. The connection component is connected to the first power source 41A. Thereby, the first power source 41A drives the annular connection component 42A to rotate in conjunction with the cooperation of the connection component and the second protrusion 423A. In this embodiment, one end of the upper sliding component 31A is also connected to the first support frame 21A by an elastic component 33A. When the locking component 22A is located at the second position, the elastic component 33A is in a stretched state. When the locking portion is located at the first position, the elastic component 33A returns to its original state.

[0032] As shown in FIG. 6, the wafer transfer device 100A further includes a plurality of first sensors 51A and a plurality of second sensors 61A. The first sensors 51A are attached to the first support frame 21A, and each first sensor 51A corresponds to one sliding assembly 30A and is used to detect whether the corresponding locking component 22A is located at the first position. The second sensors 61A are attached to the first support frame 21A, and each second sensor 61A corresponds to one sliding assembly 30A and is used to detect whether the corresponding locking component 22A is located at the second position. It may be understood as follows. One first sensor 51A and one second sensor 61A are installed for each sliding assembly 30A. The first limiting part 52A and the second limiting part 62A are connected to the upper sliding part 31A of the sliding assembly 30A. The first limiting part 52A is used to cooperate with the first sensor 51A, and the second limiting part 62A is used to cooperate with the second sensor 61A. When the first sensor 51A detects the first limiting part 52A, it can be known that the locking component 22A has reached the first position. When the second sensor 61A detects the second limiting part 62A, it can be known that the locking component 22A has reached the second position.

[0033] In this embodiment, the wafer transfer device 100A further includes a controller (not shown). The controller is respectively connected to a plurality of suction components 23A, a first power source 41A, a first sensor 51A, and a second sensor 61A, thereby interlocking the sliding assembly 30A to move the locking component 22A in an interlocking manner, so that the locking component 22A locks to the heat sink 200A. The fact that the plurality of suction components 23A simultaneously feedback that they are in contact with the heat sink 200A indicates that the heat sink 200A is in a horizontal state and not inclined. There is no need to adjust the position of the heat sink 200A. The plurality of locking components 22A may be directly controlled to lock to the heat sink 200A, which can avoid the heat sink 200A from tilting and becoming unstable during locking and the heat sink 200A from slipping off, improving the locking stability of the heat sink 200A.

[0034] In this embodiment, after the controller simultaneously receives signals fed back by a plurality of suction components 23A in contact with the heat sink 200A, the controller is provided to control the first power source 41A to interlock the annular connection component 42A to move along the circumferential direction of the first support frame 21A. After the controller receives the signal fed back by the first sensor 51A, the controller is provided to control the locking component 22A to adsorb the heat sink 200A, and then control the lifting mechanism 10A to interlock the adsorption mechanism 20A to move along the vertical direction. After the controller receives the signal fed back by the second sensor 61A, the controller is provided to control the lifting mechanism 10A to interlock the adsorption mechanism 20A to move along the vertical direction.

[0035] FIG. 7 is a schematic perspective view of the interior of the heat sink 200A according to an embodiment of the present invention, FIG. 8 is a schematic structural view of the heat sink 200A according to an embodiment of the present invention, and FIG. 9 is a schematic perspective view of the second gas flow path 230A inside the heat sink 200A according to an embodiment of the present invention. As shown in FIGS. 7 to 9, in this embodiment, at the uppermost part of the heat sink 200A, a first region 210A for placing a wafer and a second region 220A other than the first region 210A are provided. A plurality of second gas flow paths 230A are provided inside the heat sink 200A. Each second gas flow path 230A corresponds to one suction component 23A and has a first gas hole 232A located in the first region 210A and a second gas hole 231A located in the second region 220A.

[0036] FIG. 10 is a schematic cross-sectional view of the suction component 23A according to an embodiment of the present invention. As shown in FIG. 10 and also as referred to in FIG. 6, a third gas flow path extending downward from the first support frame 21A is provided inside the suction component 23A. When the suction component 23A abuts against the heat sink 200A, the third gas flow path communicates with the second gas hole 231A of the corresponding second gas flow path 230A. Thereby, the wafer is adsorbed by the second gas hole 231A, then the second gas flow path 230A, and further the first gas hole 232A. In this embodiment, the number of the second gas flow paths 230A is eight, and each second gas flow path 230A corresponds to one suction component 23A. In other embodiments, the number of the second gas flow paths 230A may be set according to actual needs.

[0037] FIG. 11 is a schematic structural view of a wafer loading / unloading device according to an embodiment of the present invention. As shown in FIG. 11, the wafer loading / unloading device includes the above-mentioned wafer transfer device 100A, a heat sink inspection device 300A, and a wafer acquisition device 400A. The wafer transfer device 100A is used to place or remove the heat sink 200A on which the wafer is placed into or from the inspection chamber of the wafer level aging inspection device 610A. The heat sink inspection device 300A is provided on the side of the wafer transfer device 100A and has a mounting base 310A for placing the heat sink 200A. The mounting base 310A extends out from the heat sink inspection device 300A under control. Thereby, the wafer transfer device 100A is provided to place the heat sink 200A on which the wafer is placed on the mounting base 310A or remove the heat sink 200A on which the wafer is placed from the mounting base 310A. The wafer acquisition device 400A is provided on the side of the heat sink inspection device 300A. The wafer acquisition device 400A is provided to take out the wafer from the wafer case 500A, correct the position of the wafer, and then place the wafer on the heat sink 200A located on the mounting base 310A. The wafer acquisition device 400A is also provided to take out the wafer on the heat sink 200A and send it into the wafer case 500A.

[0038] In this embodiment, the heat sink inspection device 300A is provided with a first gripper 330A for adsorbing the heat sink 200A. When dust is detected from the heat sink 200A, the first gripper 330A can move the heat sink 200A to the fan 320A on the side of the mounting base 310A to clean the dust, and then place the heat sink 200A that has completed cleaning back on the mounting base 310A. Here, the mounting base 310A of the heat sink inspection device 300A can extend downward to below the adsorption mechanism 20A toward the left side. Thus, when the adsorption mechanism 20A moves downward, it can acquire or place the heat sink 200A on which the wafer is placed.

[0039] In this embodiment, the wafer acquisition device 400A has a second gripper 410A. The second gripper 410A first takes out the wafer to be inspected from the wafer case 500A, places the wafer to be inspected on the wafer position calibration station 420A to calibrate the position. After the position of the wafer is calibrated, the second gripper 410A moves along the direction approaching the heat sink inspection device 300A, and thereby places the wafer on the heat sink 200A of the mounting base 310A of the heat sink inspection device 300A. Thereafter, the wafer and the heat sink 200A may be regarded as an integral unit, and both are conveyed together during the process of the whole moving. That is, in the heat sink inspection device 300A and the wafer transfer device 100A, the heat sink 200A and the wafer may be regarded as an integral unit, and both are conveyed together.

[0040] FIG. 12 is a schematic structural diagram of a wafer-level aging inspection device according to an embodiment of the present invention. As shown in FIG. 12, in this embodiment, the wafer-level aging inspection device 610A is placed inside the wafer-level aging inspection device 600A. The wafer-level aging inspection device 600A has a plurality of mounting spaces for placing the wafer-level aging inspection device 610A arranged along the vertical direction, and one wafer-level aging inspection device 610A is placed in each mounting space, and each wafer-level aging inspection device 610A can perform aging inspection on the wafer. In this embodiment, the wafer-level aging inspection device 600A and the heat sink inspection device 300A are arranged opposite to both the left and right sides of the wafer transfer device 100A. The wafer transfer device 100A can place the heat sink 200A on which the wafer is placed into the inspection chamber of the lower sealing cover 620A of any one of the wafer-level aging inspection devices 610A, provided that the lower sealing cover 620A only needs to project from the wafer-level aging inspection device 600A. Here, the lower sealing cover 620A of each wafer-level aging inspection device 610A can project down to below the suction mechanism 20A. Further, a heat dissipation component 630A for dissipating heat to the wafer-level aging inspection device 610A is provided inside the wafer-level aging inspection device 600A, thereby preventing the wafer-level aging inspection device 610A from overheating. In this embodiment, a plurality of inspection source meters are further placed inside the wafer-level aging inspection device 600A, and each wafer-level aging inspection device 610A is connected to one inspection source meter, thereby performing wafer-level aging inspection on the wafer.

[0041] FIG. 13 is a schematic cross-sectional view of a second support frame 340A of a wafer loading / unloading device according to an embodiment of the present invention. As shown in FIG. 13, the mounting base 310A includes a second support frame 340A that can move up and down along the vertical direction. When placing the wafer 700A on the mounting base 310A, the second support frame 340A rises to receive the wafer 700A through the heat sink 200A. When transporting the wafer 700A, the second support frame 340A drops to separate from the heat sink 200A, whereby the wafer 700A adheres closely to the heat sink 200A.

[0042] Specifically, the second support frame 340A includes a second power source 343A, at least one lifting column 342A, and a base 341A. The second power source 343A is connected to the base 341A, the base 341A is connected to the lifting column 342A, and the lifting column 342A can pass through a corresponding hole on the heat sink 200A. The second power source 343A drives the lifting column 342A to move up and down. In this embodiment, the number of lifting columns 342A is three.

[0043] FIG. 14 is a schematic process diagram of a control method for a wafer loading / unloading device according to an embodiment of the present invention. As shown in FIG. 14, in this embodiment, the control method for the wafer loading / unloading device includes the following steps. Step S1110, controlling the wafer acquisition device 400A to take out the wafer from the wafer cassette 500A and calibrate the position of the wafer. Step S1120, controlling the wafer acquisition device 400A to place the wafer after position calibration on the heat sink 200A of the mounting base 310A of the heat sink inspection device 300A. Step S1130, controlling the mounting base 310A of the heat sink inspection device 300A to extend. Step S1140, controlling the wafer transfer device 100A to take out the heat sink 200A on which the wafer is placed from the mounting base 310A. In step S1150, the mounting base 310A is controlled to return to its original position. Next, the wafer transfer device 100A is controlled to place the heat sink on which the wafer is placed into the inspection chamber of the wafer level aging inspection device 610A to perform a wafer level aging inspection.

[0044] In this embodiment, the fully automatic loading of the wafer can be realized by the control method, without manual intervention, reducing the labor cost and improving the inspection efficiency.

[0045] In step S1110, a scan device is provided on the second gripper 410A of the wafer acquisition device 400A. Before gripping the wafer, the scan device first scans the wafer cassette to confirm the position where the wafer is placed, and then uses the second gripper 410A to grip the wafer.

[0046] In step S1120, during the process of the second gripper 410A of the wafer acquisition device 400A placing the wafer on the heat sink 200A of the mounting base 310A, a plurality of lifting columns 342A on the mounting base 310A pass through the holes on the heat sink 200A and protrude upward. The second gripper 410A places the wafer on the plurality of lifting columns 342A. Then, the lifting columns 342A are retracted downward and return to their original positions, thereby moving the wafer downward in conjunction until it is in close contact with the heat sink 200A.

[0047] FIG. 15 is a schematic process diagram of a control method for a wafer loading / unloading device according to another embodiment of the present invention. As shown in FIG. 15, in this embodiment, the control method for the wafer loading / unloading device further includes the following steps. In step S1210, after the wafer level aging inspection of the wafer is completed, the wafer transfer device 100A is controlled to take out the heat sink 200A on which the wafer is placed from the wafer level aging inspection device 610A. In step S1220, the mounting base 310A of the heat sink inspection device 300A is controlled to protrude. In step S1230, the wafer transfer device 100A is controlled to place the heat sink 200A on which the wafer is placed on the mounting base 310A. In step S1240, the mounting base 310A is controlled to return to its original position. In step S1250, the wafer acquisition device 400A is controlled to transfer the wafer from above the heat sink 200A into the wafer case 500A.

[0048] This embodiment can not only perform full-automatic loading of wafers, but also automatically return the wafers into the wafer case 500A after the wafer-level aging inspection of the wafers is completed. Since the entire wafer loading and unloading process does not involve manual labor, the smartness of the wafer-level aging inspection has been improved.

[0049] FIG. 16 is a schematic block diagram of a wafer loading / unloading device 100B according to an embodiment of the present invention, FIG. 17 is a schematic connection diagram of a suction mechanism 20B and a lifting mechanism 24B according to an embodiment of the present invention, FIG. 18 is a schematic structural diagram of the suction mechanism 20B according to an embodiment of the present invention, FIG. 19 is a schematic structural diagram of a wafer acquisition device 80B and a heat sink inspection device 70B according to an embodiment of the present invention, FIG. 20 is a schematic structural diagram showing that the pressure-resistant platform 11B of the wafer level aging inspection device 10B according to an embodiment of the present invention is in its original state, FIG. 21 is a schematic structural diagram showing that the pressure-resistant platform 11B of the wafer level aging inspection device 10B according to an embodiment of the present invention is in a state of being extended, FIG. 22 is a schematic structural diagram showing that the suction mechanism 20B according to an embodiment of the present invention places the heat sink 200B in the lower sealing cover 12B, and FIG. 23 is a schematic structural diagram showing that the suction mechanism 20B according to an embodiment of the present invention removes the heat sink 200B from the mounting base 71B. As shown in FIGS. 16 to 23, in this embodiment, the wafer loading / unloading device 100B includes a wafer acquisition device 80B, a heat sink inspection device 70B, a suction mechanism 20B, and a wafer level aging inspection device 10B. The wafer acquisition device 80B is provided to place the target wafer W on the heat sink 200B of the mounting base 71B of the heat sink inspection device 70B. The heat sink inspection device 70B is provided on the side of the wafer acquisition device 80B and has a mounting base 71B, and the mounting base 71B is provided to be extended or retracted laterally toward the wafer level aging inspection device 10B under control. The suction mechanism 20B is provided on the side of the heat sink inspection device 70B and is controlled to clamp the heat sink 200B on which the target wafer W is placed, and is provided to place the heat sink 200B on which the target wafer W is placed in the lower sealing cover 12B of the pressure-resistant platform 11B of the wafer level aging inspection device 10B.The wafer-level aging inspection apparatus 10B is provided on the side of the adsorption mechanism 20B and is used to perform wafer-level aging inspection on the target wafer W. The wafer-level aging inspection apparatus 10B has a pressure-resistant platform 11B, and the pressure-resistant platform 11B is provided to protrude or retract laterally toward the heat sink inspection apparatus 70B under control.

[0050] In this embodiment, the mounting base 71B is provided to protrude laterally toward the wafer-level aging inspection apparatus 10B from below the adsorption mechanism 20B under control. After the mounting base 71B protrudes laterally, the adsorption mechanism 20B clamps the heat sink 200B, and then the heat sink 200B on which the target wafer W is placed is moved upward to the first target position in conjunction, and subsequently, the pressure-resistant platform 11B is provided to protrude laterally toward the heat sink inspection apparatus 70B from below the adsorption mechanism 20B under control.

[0051] In this embodiment, the adsorption mechanism 20B realizes the transfer of the heat sink 200B by moving up and down. However, it is only necessary to control the pressure-resistant platform 11B of the wafer-level aging inspection apparatus 10B and the mounting base 71B of the heat sink inspection apparatus 70B to shift from each other and protrude from the side to below the adsorption mechanism 20B. In other embodiments, the adsorption mechanism 20B may also realize the transfer of the heat sink 200B by moving left and right, and specifically, it may be set based on the design requirements.

[0052] In this embodiment, since the heat sink inspection apparatus 70B and the wafer-level aging inspection apparatus 10B are respectively located on the left and right sides of the adsorption mechanism 20B, the transfer distance of the target wafer W can be shortened, the transfer time can be shortened, the structure of the wafer loading / unloading device 100B becomes more compact, and the required space is small.

[0053] In this embodiment, the wafer-level aging inspection apparatus 10B further includes a lifting mechanism 13B located below the pressure-resistant platform 11B and a cover plate assembly 14B located above the pressure-resistant platform 11B. After the lifting mechanism 13B moves upward to a position in contact with the lower sealing cover 12B, it continues to move upward, thereby moving the lower sealing cover 12B upward in conjunction to connect it to the cover plate assembly 14B, thereby forming an inspection chamber, and is provided to perform a wafer-level aging inspection on the target wafer W in the inspection chamber.

[0054] In this embodiment, the heat sink inspection apparatus 70B is provided with a gripper (i.e., the first gripper) 72B for adsorbing the heat sink 200B. When dust is detected from the heat sink 200B, the gripper 72B can move the heat sink 200B to the fan on the side of the mounting base 71B to clean the dust, and then place the heat sink 200B that has completed cleaning back on the mounting base 71B. Here, the mounting base 71B of the heat sink inspection apparatus 70B can extend downward to the lower side of the suction mechanism 20B toward the left side, whereby when the suction mechanism 20B moves downward, it can acquire or place the heat sink 200B on which the target wafer W is placed.

[0055] In this embodiment, the wafer acquisition device 80B has a manipulator (also called the second gripper) 81B. First, the manipulator 81B takes out the wafer W to be inspected from the wafer case 90B, places the wafer W to be inspected on the wafer position calibration station 82B for position calibration. After the position of the wafer is calibrated, the manipulator 81B moves along the direction approaching the heat sink inspection device 70B, and thereby places the target wafer W on the heat sink 200B of the mounting table 71B of the heat sink inspection device 70B. Thereafter, the wafer and the heat sink 200B may be regarded as an integral unit, and both are conveyed together during the process of the whole moving. That is, the heat sink 200B and the target wafer W may be regarded as an integral unit among the heat sink inspection device 70B, the adsorption mechanism 20B, and the wafer level aging inspection device 10B, and both are conveyed together.

[0056] In this embodiment, the adsorption mechanism 20B is connected to the lifting mechanism 24B, and the lifting mechanism 24B can move the adsorption mechanism 20B in the vertical direction in conjunction. The adsorption mechanism 20B includes a first support frame 21B, a plurality of adsorption components 23B, and a plurality of locking components 22B. However, the first support frame 21B is annular. The plurality of adsorption components 23B are arranged at intervals along the circumferential direction of the first support frame 21B and are connected to the first support frame 21B. The plurality of adsorption components 23B simultaneously provide an adsorption force to the bottom of the target wafer W, and are thus provided to make the target wafer W adhere closely to the heat sink 200B. The plurality of locking components 22B are arranged at intervals along the circumferential direction of the first support frame 21B and are connected to the first support frame 21B. The plurality of locking components 22B are provided to lock and adsorb the heat sink 200B on which the target wafer W is placed under control, thereby avoiding the heat sink 200B on which the target wafer W is placed from falling off during the moving process. Here, the plurality of adsorption components 23B and the plurality of locking components 22B are arranged alternately, and the plurality of locking components 22B and the plurality of adsorption components 23B are uniformly arranged on the first support frame 21B respectively. The lifting mechanism 24B can move the adsorption mechanism 20B up and down in conjunction.

[0057] In this embodiment, the bottom of the target wafer W is adsorbed by a plurality of adsorption components 23B, and the target wafer W is brought into close contact with the heat sink 200B, so that the movement and dropping of the target wafer W can be prevented. At the same time, a plurality of locking components 22B lock the heat sink 200B on which the target wafer W is placed. The locking component 22B can also provide an adsorption force to the heat sink 200B, thereby avoiding dropping during the process of transporting the heat sink 200B and improving the stability during the movement of the heat sink 200B. The present invention not only adsorbs the target wafer W, but also adsorbs the heat sink 200B. By adsorbing both, the stability during the process of transporting the target wafer W and the heat sink 200B is guaranteed, and the target wafer W and the heat sink 200B can be prevented from dropping off the adsorption mechanism 20B.

[0058] As shown in FIG. 18, in this embodiment, the wafer loading / unloading device 100B further includes a plurality of sliding assemblies 30B. Each sliding assembly 30B corresponds to one locking component 22B, and the locking component 22B is slidably connected to the first support frame 21B, so that the locking component 22B is controlled to slide along the radial direction of the first support frame 21B, thereby being used to switch between a first position where it is locked to the heat sink 200B and a second position where it is separated from the heat sink 200B. It may be understood as follows. All the sliding assemblies 30B simultaneously move the corresponding locking components 22B in conjunction towards the central position of the first support frame 21B, so that the heat sink 200B can be supported simultaneously. At this time, the locking component 22B is located at the first position. When all the sliding assemblies 30B simultaneously move the corresponding locking components 22B back to their original positions, that is, when moving away from the central position of the first support frame 21B, the support for the heat sink 200B is removed. At this time, the locking component 22B is located at the second position.

[0059] FIG. 24 is a schematic partial view of the adsorption mechanism 20B according to an embodiment of the present invention, FIG. 25 is a schematic structural view of the locking component 22B and the sliding assembly 30B according to an embodiment of the present invention, and FIG. 26 is a schematic cross-sectional view of the locking component 22B according to an embodiment of the present invention. As shown in FIGS. 24 to 26 and also as referred to in FIG. 18, the locking component 22B is L-shaped and has a vertical portion 221B and a horizontal portion 222B. The horizontal portion 222B is provided to abut against the bottom of the heat sink 200B when the locking component 22B moves toward the center direction of the first support frame 21B, thereby supporting the heat sink 200B. As can be seen from FIG. 24, a plurality of cuts 240B are provided on the outer peripheral side of the heat sink 200B. Each cut 240B corresponds to one locking component 22B. The locking component 22B moves from the cut 240B to the horizontal portion 222B and is located below the heat sink 200B, thereby being able to support the heat sink 200B. When the horizontal portion 222B of the locking component 22B moves to the cut 240B, the support for the heat sink 200B is removed.

[0060] In this embodiment, a first gas flow path 223B is provided inside the locking component 22B, thereby adsorbing the heat sink 200B when abutting against the bottom of the heat sink 200B. As can be seen from FIG. 25, the uppermost part of the horizontal portion 222B has an adsorption port 224B communicating with the first gas flow path 223B, and the heat sink 200B is adsorbed by the adsorption port 224B. In this embodiment, not only the target wafer W is adsorbed, but also the bottom of the heat sink 200B is adsorbed, thereby avoiding the movement or slipping of the heat sink 200B.

[0061] As shown in FIG. 24, in this embodiment, the wafer loading / unloading device 100B further includes a drive assembly 40B. The drive assembly 40B is provided on the first support frame 21B and cooperates with a plurality of locking components 22B and sliding assemblies 30B, thereby being controlled to simultaneously interlock the locking components 22B to switch between the first position and the second position. That is, the drive assembly 40B can drive a plurality of sliding assemblies 30B at the same time to interlock and move the corresponding locking components 22B.

[0062] In this embodiment, the drive assembly 40B includes at least one first power source 41B and an annular connection component 42B. The first power source 41B is mounted on the top of the first support frame 21B. The annular connection component 42B is mounted on the first support frame 21B and is arranged concentrically with the first support frame 21B. The annular connection component 42B is connected to the first power source 41B and cooperates with a plurality of sliding assemblies 30B. The annular connection component 42B is rotated in conjunction with the first power source 41B, thereby simultaneously sliding a plurality of sliding assemblies 30B in conjunction, and thereby simultaneously moving a plurality of locking components 22B in conjunction. Here, the first power source 41B is a pen cylinder. In other embodiments, as the first power source 41B, other components, for example, a rack and pinion structure, may be used. In this embodiment, the number of the first power sources 41B is two, and the two first power sources 41B are arranged on the first support frame 21B at intervals. In other embodiments, the number of the first power sources 41B may be set based on specific design requirements. For example, it may be set based on the diameter of the annular connection component 42B. The larger the diameter of the annular connection component 42B, the more the number of the first power sources 41B; the smaller the diameter of the annular connection component 42B, the fewer the number of the first power sources 41B.

[0063] As shown in FIGS. 24 and 25, in this embodiment, the sliding assembly 30B includes an upper sliding component 31B connected to the locking component 22B and a lower sliding component 32B connected to the first support frame 21B. An abutting portion 34B is provided on the upper sliding component 31B. A plurality of first protrusions 421B having inclined surfaces 422B are provided on the annular connecting component 42B. Each first protrusion 421B corresponds to the abutting portion 34B of one sliding assembly 30B. The first protrusion 421B is provided to slide the abutting portion 34B along the inclined surface 422B during the rotation of the annular connecting component 42B, thereby driving the upper sliding component 31B to slide along the lower sliding component 32B. That is, the first protrusion 421B is moved during the rotation of the annular connecting component 42B. At this time, the abutting portion 34B moves upward or downward along the inclined surface 422B. When the annular connecting component 42B rotates clockwise, the abutting portion 34B moves downward along the inclined surface 422B, and the upper sliding component 31B drives the locking component 22B to move toward the center position of the first support frame 21B until it reaches the first position. When the annular connecting component 42B rotates counterclockwise, the abutting portion 34B moves upward along the inclined surface 422B, and the upper sliding component 31B drives the locking portion to move away from the center position of the first support frame 21B until it reaches the second position. In this embodiment, by skillfully providing the protrusion having the inclined surface 422B, the movement of the locking portion is realized, and the structure is simple and easy to implement. Here, a plurality of second protrusions 423B are further provided on the annular connecting component 42B. Grooves are provided on each second protrusion 423B. A connecting component that cooperates with the groove is connected to each second protrusion 423B. The connecting component is connected to the first power source 41B. Thereby, the first power source 41B drives the annular connecting component 42B to rotate in conjunction with the cooperation of the connecting component and the second protrusion 423B. In this embodiment, one end of the upper sliding component 31B is also connected to the first support frame 21B by an elastic component 33B. When the locking component 22B is located at the second position, the elastic component 33B is in a stretched state. When the locking portion is located at the first position, the elastic component 33B returns to its original state.

[0064] As shown in FIG. 18, the wafer loading / unloading device 100B further includes a plurality of first sensors 51B and a plurality of second sensors 61B. The first sensors 51B are attached to the first support frame 21B, and each first sensor 51B corresponds to one sliding assembly 30B and is used to detect whether the corresponding locking component 22B is located at the first position. The second sensors 61B are attached to the first support frame 21B, and each second sensor 61B corresponds to one sliding assembly 30B and is used to detect whether the corresponding locking component 22B is located at the second position. It may be understood as follows. One first sensor 51B and one second sensor 61B are installed on each sliding assembly 30B. The first limiting part 52B and the second limiting part 62B are connected to the upper sliding part 31B of the sliding assembly 30B. The first limiting part 52B is used to cooperate with the first sensor 51B, and the second limiting part 62B is used to cooperate with the second sensor 61B. When the first sensor 51B detects the first limiting part 52B, it can be known that the locking component 22B has reached the first position. When the second sensor 61B detects the second limiting part 62B, it can be known that the locking component 22B has reached the second position.

[0065] In this embodiment, the wafer loading / unloading device 100B further includes a controller (not shown). The controller is respectively connected to a plurality of suction components 23B, a first power source 41B, a first sensor 51B and a second sensor 61B, so as to interlock the sliding assembly 30B to move the locking component 22B in an interlocking manner, whereby the locking component 22B is locked to the heat sink 200B. The fact that the plurality of suction components 23B are in contact with the heat sink 200B and feedback at the same time indicates that the heat sink 200B is in a horizontal state and not inclined. There is no need to adjust the position of the heat sink 200B. The plurality of locking components 22B can be directly controlled to be locked to the heat sink 200B, which can avoid the heat sink 200B from tilting and becoming unstable during locking and the heat sink 200B from slipping off, improving the locking stability of the heat sink 200B.

[0066] In this embodiment, after the controller simultaneously receives signals fed back by a plurality of suction components 23B in contact with the heat sink 200B, the first power source 41B is controlled to interlock the annular connection component 42B to move along the circumferential direction of the first support frame 21B. After the controller receives the signal fed back by the first sensor 51B, the locking component 22B is controlled to adsorb the heat sink 200B, and then the lifting mechanism 24B is controlled to interlock the adsorption mechanism 20B to move along the vertical direction. After the controller receives the signal fed back by the second sensor 61B, the lifting mechanism 24B is controlled to interlock the adsorption mechanism 20B to move along the vertical direction.

[0067] FIG. 27 is a schematic structural diagram of the heat sink 200B according to an embodiment of the present invention, FIG. 28 is a schematic cross-sectional view of the heat sink 200B according to an embodiment of the present invention, and FIG. 29 is a schematic enlarged view of part A in FIG. 28. As shown in FIGS. 27 to 29, in this embodiment, a plurality of second gas flow paths 230B are provided inside the heat sink 200B, each second gas flow path 230B corresponds to one suction component 23B, and the second gas flow path 230B has a first gas hole 220B and a second gas hole 210B located at the uppermost part of the heat sink 200B. As shown in FIG. 29, when the target wafer W is located on the heat sink 200B, it is located at the uppermost part of the first gas hole 220B.

[0068] FIG. 30 is a schematic cross-sectional view of the adsorption component 23B according to an embodiment of the present invention. As shown in FIG. 30 and also as referred to in FIG. 18, inside the adsorption component 23B, a third gas flow path 231B extending downward from the first support frame 21B is provided. The third gas flow path 231B communicates with the second gas hole 210B of the corresponding second gas flow path 230B when the adsorption component 23B abuts against the heat sink 200B. Thus, the target wafer W is adsorbed by the second gas hole 210B, then the second gas flow path 230B, and further the first gas hole 220B. In this embodiment, the number of the second gas flow paths 230B is eight, and each second gas flow path 230B corresponds to one adsorption component 23B. In other embodiments, the number of the second gas flow paths 230B may be set according to actual needs.

[0069] In this embodiment, the heat sink 200B further has a first vacuum adsorption gas flow path 250B and a through hole 260B arranged along the thickness direction. The first vacuum adsorption gas flow path 250B evacuates from the bottom, and is used to adsorb the target wafer W located at the top of the heat sink 200B. The through hole 260B is used for the second support frame to pass through the heat sink 200B to receive the target wafer W.

[0070] FIG. 31 is a schematic process diagram of a control method for a wafer loading / unloading device according to an embodiment of the present invention. As shown in FIG. 31, in a specific embodiment, the control method for the wafer loading / unloading device includes the following steps. Step S100: After placing the heat sink 200B with the target wafer W placed thereon on the mounting table 71B of the heat sink inspection device 70B, control the mounting table 71B to extend laterally toward the wafer level aging inspection device 10B. Step S200: Control the adsorption mechanism 20B to clamp the heat sink 200B with the target wafer W placed thereon. In step S300, after controlling and returning the mounting base 71B, the pressure-resistant platform 11B of the wafer-level aging inspection apparatus 10B is controlled to be extended laterally toward the heat sink inspection apparatus 70B. In step S400, the adsorption mechanism 20B is controlled to place the heat sink 200B on which the target wafer W is placed inside the lower sealing cover 12B of the pressure-resistant platform 11B. In step S500, the pressure-resistant platform 11B is controlled to return, and the lower sealing cover 12B is controlled to dock with the cover plate assembly 14B to form an inspection chamber, thereby performing wafer-level aging inspection.

[0071] In this embodiment, by combining the method of extending the mounting base 71B of the heat sink inspection apparatus 70B and the pressure-resistant platform 11B of the wafer-level aging inspection apparatus 10B laterally respectively, and the movement of the adsorption mechanism 20B, the conveyance of the heat sink 200B can be realized, the steps of wafer loading can be simplified, the conveyance distance of the wafer can be shortened, and thereby the loading device becomes more compact.

[0072] In this embodiment, the adsorption mechanism 20B realizes the conveyance of the heat sink 200B by moving up and down. However, it is only necessary to control the pressure-resistant platform 11B of the wafer-level aging inspection apparatus 10B and the mounting base 71B of the heat sink inspection apparatus 70B to shift from each other and extend laterally to below the adsorption mechanism 20B. In other embodiments, the adsorption mechanism 20B may also realize the conveyance of the heat sink 200B by moving left and right, and specifically, it may be set based on design requirements.

[0073] In some embodiments, step S200 specifically includes the following steps. In step S210, after confirming that any locking component 22B of the adsorption mechanism 20B is in a released state, the adsorption mechanism 20B is controlled to move downward. In step S220, any one of the suction components 23B of the suction mechanism 20B is controlled to suction the target wafer W. In step S230, any one of the locking components 22B is controlled to clamp the heat sink 200B. In step S240, any one of the locking components 22B is controlled to suction to the heat sink 200B.

[0074] In this embodiment, the suction mechanism 20B not only clamps the heat sink 200B on which the target wafer W is placed, but also simultaneously suctions the target wafer W and the heat sink 200B, thereby improving the stability in the process of transporting the heat sink 200B on which the target wafer W is placed, and the target wafer W can be prevented from falling, bending or being damaged during the transfer process.

[0075] In a preferred embodiment, before the suction mechanism 20B moves downward, all the locking components 22B are controlled to be released, and the photoelectric sensors of each locking component 22B of the suction mechanism 20B acquire information on whether the locking component 22B is in a released state. When it is confirmed that all the locking components 22B are in a released state, the suction mechanism 20B is controlled to move downward. If any one of the locking components 22B is not released, an alarm is issued. Here, the locking component 22B may be understood as a jaw chuck. In step S240, a gas flow path connected to a vacuum suction device is provided inside the locking component 22B, and the heat sink 200B is suctioned by starting the vacuum suction device to perform vacuum pumping. Here, the locking component 22B suctions to the bottom of the heat sink 200B.

[0076] In some embodiments, step S220 specifically includes the following steps. In step S221, it is determined whether all the suction components 23B of the suction mechanism 20B are in contact with the heat sink 200B during the process of the suction mechanism 20B moving downward. If so, step S222 is performed. If not, the suction mechanism 20B is controlled to continue moving downward until it contacts the heat sink 200B. In step S222, the suction mechanism 20B is controlled to continue moving downward by a first preset distance, and then the suction component 23B is controlled to adsorb and closely adhere the target wafer W to the heat sink 200B. Here, the first preset distance may be designed based on specific design requirements.

[0077] In step S221, the suction component 23B feeds back a contact signal. That is, a contact switch is provided on the suction component 23B, which is turned on if it is in contact with the heat sink 200B and turned off if not. Based on this contact signal, it is determined whether the suction component 23B is in contact with the heat sink 200B.

[0078] In step S222, a gas flow path connected to a vacuum suction device is provided inside the suction component 23B. By activating the vacuum suction device to perform vacuum suction, the target wafer W is adsorbed. The suction component 23B is aligned with the second gas hole 210B of the second gas flow path 230B of the heat sink 200B. Thus, the target wafer W is adsorbed by the second gas hole 210B, then the second gas flow path 230B, and further the first gas hole 220B. At this time, the target wafer W is located above the first gas hole 220B of the heat sink 200B. Here, based on the vacuum degree information of each suction component 23B obtained, it is determined whether all the suction components 23B are adsorbing the target wafer W. When it is determined that all the suction components 23B are adsorbing the target wafer W, step S230 is performed.

[0079] In some embodiments, step S230 specifically includes the following steps. In step S231, any one of the locking components 22B is controlled to move toward the center line of the suction mechanism 20B to reach the corresponding second target position. In step S232, it is determined whether any of the locking components 22B has reached the second target position. If so, step S233 is performed; if not, an alarm is issued. In step S233, the locking component 22B is controlled to move upward by a second preset distance, whereby the free end of any one of the locking components 22B contacts the bottom of the heat sink 200B, thereby clamping the heat sink 200B.

[0080] In step S231, after the locking component 22B moves toward the center line of the suction mechanism 20B, it catches the heat sink 200B from below the heat sink 200B. Here, the edge of the heat sink 200B has a plurality of cuts 240B, and the locking component 22B moves from the cuts 240B until part of it is located below the heat sink 200B, that is, it moves in the direction of the center line of the suction mechanism 20B, thereby being able to support the heat sink 200B.

[0081] In step S232, the photoelectric sensor on each locking component 22B scans the position of the locking component 22B to determine whether the locking component 22B has reached the second target position. If no signal is detected, it can be known that the locking component 22B may be subject to interference from the heat sink 200B, and an alarm is issued.

[0082] In step S233, the second preset distance is any value between 0.5 and 1 mm, for example, it may be 0.5 mm, 0.7 mm or 1 mm. It can be ensured that the locking component 22B abuts against the bottom of the heat sink 200B.

[0083] In this embodiment, after step S240, the following steps are further included. In step S241, any one of the locking components 22B is controlled to be adsorbed to the bottom of the heat sink 200B. In step S242, vacuum degree information of the vacuum adsorption device connected to any of the locking components 22B is acquired. In step S243, based on any of the vacuum degree information, it is determined whether the corresponding locking component 22B adsorbs the heat sink 200B. If so, step S244 is performed; if not, an alarm is issued. In step S244, the adsorption mechanism 20B is controlled to move the heat sink 200B on which the target wafer W is placed upward to the first target position in conjunction.

[0084] In step S241, a first gas flow path 223B is provided inside the locking component 22B, and thereby the heat sink 200B is adsorbed when contacting the bottom of the heat sink 200B. As can be seen from FIG. 25, the uppermost part of the horizontal portion 222B has an adsorption port 224B communicating with the first gas flow path 223B, and the heat sink 200B is adsorbed by the adsorption port 224B. In this embodiment, not only the target wafer W is adsorbed, but also the bottom of the heat sink 200B is adsorbed, thereby avoiding the heat sink 200B from moving or slipping off.

[0085] In step S243, in this embodiment, by judging the vacuum degree, the stability can be guaranteed during the process of transporting the heat sink 200B.

[0086] In some embodiments, the control method further includes the following steps before step S100. In step S10, position information of the target wafer W in the wafer case 90B is acquired. In step S20, based on the position information, the wafer acquisition device 80B is controlled to grasp the target wafer W and transfer it to the wafer position calibration station, thereby performing angle adjustment and eccentricity adjustment on the target wafer W. In step S30, the wafer acquisition device 80B is controlled to transfer the target wafer W after adjustment from the wafer position calibration station to the heat sink inspection device 70B.

[0087] In step S10, the scanning device scans the situation where the wafer is placed in the wafer case 90B, obtains the position of the target wafer W in the wafer case 90B, that is, confirms which stage of the wafer case 90B the target wafer W is placed on, and determines whether the target wafer W is placed horizontally. Since the wafer is manually placed into the wafer case 90B by manpower, the target wafer W may be placed obliquely. When it is recognized that the target wafer W is placed non - horizontally in the wafer case 90B, an alarm is issued.

[0088] In step S20, the manipulator 81B of the wafer acquisition device 80B supports the target wafer W below the target wafer W and acquires the wafer by adsorbing the lower surface of the target wafer W. Before controlling the manipulator 81B to take out the target wafer W from the wafer case 90B, it is necessary to judge the degree of vacuum, thereby judging whether the manipulator 81B firmly adsorbs the target wafer W, preventing the target wafer W from falling during the moving process, and ensuring its stability during the conveying process of the target wafer W. Here, the angle adjustment and eccentricity adjustment for the target wafer W are specifically to find the inclination angle and the center of the circle of the target wafer W by the imaging device, then perform the angle adjustment, and subsequently perform the X - Y direction adjustment.

[0089] In this embodiment, step S100 specifically includes the following steps. Step S110: After receiving the target wafer W through the second support frame of the heat sink 200B in advance, control the second support frame to descend and separate it from the heat sink 200B, whereby the target wafer W adheres closely to the heat sink 200B. Step S120: Adsorb the target wafer W by evacuating the first vacuum adsorption gas flow path 250B in the heat sink 200B. In step S130, it is determined whether the target wafer W is adsorbed on the heat sink 200B and is within a preset area of the heat sink 200B. If so, step S140 is performed. If not, the wafer acquisition device 80B is controlled to retrieve the target wafer W, and step S110 is performed again. In step S140, the mounting table 71B is controlled to extend laterally from the side toward the heat sink inspection device 70B to below the suction mechanism 20B of the wafer transfer device.

[0090] In step S110, the heat sink 200B has a through hole 260B extending along the thickness direction. The second support frame passes through the through hole 260B. When the second support frame rises above the heat sink 200B, the target wafer W is directly placed on the second support frame. Subsequently, the second support frame moves downward, causing the target wafer W to be lowered to the heat sink 200B in conjunction. Next, the second support frame continues to descend and separates from the through hole 260B, thereby separating from the heat sink 200B.

[0091] In step 120, the first vacuum suction gas flow path 250B is in the shape of a hole. As shown in FIG. 27, one gas hole of the first vacuum suction gas flow path 250B is located on the upper surface of the heat sink 200B, and the other gas hole is located on the lower surface of the heat sink 200B. A vacuum is drawn from the gas hole on the lower surface, thereby creating a vacuum by the first vacuum suction gas flow path 250B, and the target wafer W is adsorbed onto the heat sink 200B. That is, at least two types of gas flow paths are provided inside the heat sink 200B. One type of gas flow path is used for suction by the suction mechanism 20B and is provided at the edge of the heat sink 200B, that is, the second gas flow path 230B. Another type of gas flow path is provided along the thickness direction of the heat sink 200B, that is, the first vacuum suction gas flow path 250B. When the heat sink 200B and the target wafer W are located on the mounting table 71B, the vacuum suction mechanism is used to adsorb the target wafer W by the first vacuum suction gas flow path 250B.

[0092] In step S130, similarly, it is determined whether the wafer is adsorbed on the heat sink 200B according to the degree of vacuum. If the edge of the target wafer W is not within the preset area of the heat sink 200B, if the target wafer W is severely warped, an over - tolerance of the position will occur.

[0093] In step S140, the distance of moving to the side of the mounting table 71B is set based on specific design requirements. Here, steps S140 and step 210 may be performed simultaneously.

[0094] In some embodiments, step S300 specifically includes the following steps. Step S310, after controlling the mounting table 71B to return, control the second vacuum adsorption gas flow path in the pressure - resistant platform 11B to adsorb it to the lower sealing cover 12B. Step S320, determine whether the lower sealing cover 12B is adsorbed based on the vacuum degree information of the second vacuum adsorption gas flow path. If so, perform step S430; if not, issue an alarm. Step S330, control the pressure - resistant platform 11B of the wafer - level aging inspection device 10B to extend from the side towards the heat sink inspection device 70B to below the adsorption mechanism 20B.

[0095] In step S320, the lower sealing cover 12B is positioned by positioning pins and mounted on the pressure - resistant platform 11B. Since the positioning pins may be abnormal, it is necessary to determine the position where the lower sealing cover 12B is placed again according to the degree of vacuum, and prevent the lower sealing cover 12B from slipping off or being displaced during the process of the pressure - resistant platform 11B extending from the side.

[0096] In this embodiment, after step S400, it further includes the following steps. In step S410, by evacuating the second vacuum adsorption gas flow path in the pressure-resistant platform 11B, the heat sink 200B and the target wafer W are respectively adsorbed. In step S420, the clamping of the locking component 22B with respect to the heat sink 200B on which the target wafer W is placed is removed. In step S430, the adsorption mechanism 20B is controlled to be restored.

[0097] In this embodiment, after the pressure-resistant platform 11B adsorbs the heat sink 200B and the target wafer W, the adsorption force of the locking component 22B with respect to the heat sink 200B and the adsorption force of the adsorption component 23B with respect to the target wafer W are removed. As a result, it can be ensured that the heat sink 200B and the target wafer W are always adsorbed during the transportation process, and the adsorption force does not break, so that the target wafer W does not warp.

[0098] In step S410, the second vacuum adsorption gas flow path in the pressure-resistant platform 11B not only adsorbs the lower sealing cover 12B, but also communicates with the first vacuum adsorption gas flow path 250B of the heat sink 200B when the heat sink 200B and the target wafer W are located in the lower sealing cover 12B, and is used to adsorb the target wafer W.

[0099] In this embodiment, step S500 specifically includes the following steps. In step S510, the pressure-resistant platform 11B is controlled to be restored. In step S520, the position information of the target wafer W is obtained. In step S530, based on the position information of the target wafer W, the target wafer W and the inspection probe are aligned, and thus the position adjustment of the target wafer W is performed. In step S540, the push-up mechanism 13B is controlled to push up the lower sealing cover 12B upward, thereby connecting it to the upper cover plate assembly to form an inspection chamber, and thereby performing wafer-level aging inspection on the target wafer W.

[0100] In step S530, the imaging device takes two images of the target wafer W, calculates the tilt angle of the target wafer W from the line connecting the two chips, then performs angle adjustment, and next performs alignment in the X-Y direction.

[0101] In some embodiments, the control method further includes the following steps after step S500. Step S610 of controlling the lower sealing cover 12B to separate it from the cover plate assembly 14B and lower it onto the pressure-resistant platform 11B. Step S620 of controlling the pressure-resistant platform 11B to extend it laterally toward the heat sink inspection device 70B. Step S630 of controlling the suction mechanism 20B to take out the heat sink 200B on which the target wafer W is placed from inside the lower sealing cover 12B. Step S640 of controlling the pressure-resistant platform 11B to return it. Step S650 of controlling the mounting base 71B of the heat sink inspection device 70B to extend it laterally toward the wafer-level aging inspection device 10B. Step S660 of controlling the suction mechanism 20B to place the heat sink 200B on which the target wafer W is placed on the mounting base 71B. Step S670 of controlling the mounting base 71B to return it. Step S680 of controlling the wafer acquisition device 80B to transfer the wafer from the heat sink 200B into the wafer case 90B.

[0102] In this embodiment, after the wafer-level aging inspection of the target wafer W is completed, first control the lifting mechanism 13B to move the lower sealing cover 12B downward in conjunction therewith, thereby returning it, and then control the pressure-resistant platform 11B to extend it laterally from the side toward the heat sink inspection device 70B until it is below the suction mechanism 20B.

[0103] By designing a fully automated wafer loading and unloading device, the heat sink 200B and the target wafer W can be quickly and conveniently transferred into the wafer-level aging inspection device 10B, with a high degree of automation, high loading reliability, high convenience in use, and the overall device having a simple and compact structure, thus effectively improving the space utilization rate.

[0104] It should be understood by those skilled in the art that although several exemplary embodiments of the present invention are shown and described in detail in this specification, many other modifications or changes that conform to the principles of the present invention can be directly determined or derived based on the content disclosed in the present invention without departing from the spirit and scope of the present invention. Therefore, the scope of the present invention should be construed as covering all those other modifications or changes and should be determined.

Claims

1. A wafer transport device for transporting a heat sink on which a wafer is placed, the wafer transport device including a suction mechanism and a lifting mechanism that can move the suction mechanism along a vertical direction in cooperation with the suction mechanism, the suction mechanism including: a first support frame having an annular shape and connected to the lifting mechanism; a plurality of suction components arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, the plurality of suction components being configured to simultaneously provide a suction force to the bottom of the wafer, thereby closely contacting the wafer to the heat sink; and a plurality of locking parts arranged at intervals along the circumferential direction of the first support frame and connected to the first support frame, the locking parts being configured to simultaneously lock the heat sink on which the wafer is placed and provide an adsorption force to the heat sink under control, thereby preventing the heat sink on which the wafer is placed from falling off during the process of moving according to the adsorption mechanism.

2. 2. The wafer transport device of claim 1, further comprising: a plurality of sliding assemblies, each of which corresponds to one of the locking parts and slidably connects the locking part to the first support frame, whereby the locking part slides radially along the first support frame under control, thereby switching between a first position where it is locked to the heat sink and a second position where it is spaced apart from the heat sink.

3. the locking part is L-shaped and has a vertical portion and a horizontal portion, the horizontal portion being configured to abut against a bottom of the heat sink when the locking part moves toward the center of the first support frame, thereby supporting the heat sink; 3. The wafer transport device according to claim 2, wherein a first gas flow path is provided inside the locking part, thereby adsorbing the heat sink when the locking part abuts against the bottom of the heat sink.

4. 4. The wafer transport device of claim 3, further comprising a drive assembly provided on the first support frame and cooperating with a plurality of the sliding assemblies to control the locking components to simultaneously switch between the first position and the second position.

5. the drive assembly: at least one first power source mounted on top of the first support frame; 5. The wafer transport device of claim 4, further comprising: an annular connecting part attached to the first support frame and arranged concentrically with the first support frame, the annular connecting part being connected to the first power source and cooperating with the plurality of sliding assemblies, the annular connecting part being configured to rotate in conjunction with the first power source, thereby simultaneously sliding the plurality of sliding assemblies in conjunction with each other, and thereby simultaneously moving the plurality of locking parts in conjunction with each other.

6. the sliding assembly includes an upper sliding part connected to the locking part and a lower sliding part connected to the first support frame, and the upper sliding part is provided with an abutment part; 6. The wafer transport device according to claim 5, wherein the annular connection part is provided with a plurality of first protrusions having inclined surfaces, each of the first protrusions corresponding to the abutment portion of one of the sliding assemblies, and the first protrusions cause the abutment portions to slide along the inclined surfaces as the annular connection part rotates, thereby driving the upper sliding part to slide along the lower sliding part.

7. a plurality of first sensors attached to the first support frame, each of the first sensors corresponding to one of the sliding assemblies and used to detect whether the corresponding locking part is located at the first position; 7. The wafer transport device of claim 6, further comprising: a plurality of second sensors attached to the first support frame, each second sensor corresponding to one of the slide assemblies and used to detect whether the corresponding locking part is located at the second position.

8. a controller connected to each of the plurality of suction components, the first power source, the first sensor, and the second sensor; the controller is configured to simultaneously receive feedback signals indicating that the plurality of suction components are in contact with the heat sink, and then control the first power source to move the annular connecting components in conjunction with each other in the circumferential direction of the first support frame; the controller is further configured to, after receiving a feedback signal from the first sensor, control the locking part to adsorb the heat sink, and then control the lifting mechanism to move the adsorption mechanism along a vertical direction in conjunction with the locking part; 8. The wafer transport device according to claim 7, wherein the controller is further configured to control the lifting mechanism to move the suction mechanism along the vertical direction in conjunction with the lifting mechanism after receiving a feedback signal from the second sensor.

9. a first region for placing the wafer and a second region other than the first region are provided on the top of the heat sink; a plurality of second gas flow paths are provided inside the heat sink, each of the second gas flow paths corresponds to one of the suction components and has a first gas hole located in the first region and a second gas hole located in the second region; 9. The wafer transport device according to claim 1, wherein a third gas flow path extending downward from the first support frame is provided inside the suction component, and the third gas flow path is configured to communicate with the second gas hole of the corresponding second gas flow path when the suction component abuts against the heat sink.

10. a wafer transport device according to any one of claims 1 to 8, for placing the heat sink on which the wafer is placed into an inspection chamber of a wafer-level aging inspection device or for removing the heat sink from the inspection chamber; a heat sink inspection device provided at the side of the wafer transport device and having a mounting base for placing the heat sink, the mounting base being extended from the heat sink inspection device under control, thereby allowing the wafer transport device to place the heat sink with the wafer placed on the mounting base or remove the heat sink with the wafer placed on the mounting base; a wafer loading / unloading device provided on the side of the heat sink inspection device, the wafer acquiring device configured to remove a wafer from a wafer case, calibrate a position relative to the wafer, and then place the wafer on the heat sink located on the mounting table, and also configured to remove the wafer on the heat sink and transfer it into the wafer case.

11. the mounting base includes a second support frame that can be raised and lowered along a vertical direction, When placing the wafer on the mount, the second support frame rises and passes the heat sink to receive the wafer; 11. The wafer loading and unloading device of claim 10, wherein when transporting the wafer, the second support frame drops and separates from the heat sink, thereby causing the wafer to come into close contact with the heat sink.

12. placing the heat sink with the target wafer mounted on a mounting base of the heat sink inspection device, and then controlling the mounting base to move the heat sink from the side toward the wafer-level aging inspection device; a step of controlling a suction mechanism to clamp the heat sink on which the target wafer is placed; controlling the mounting base to return to its original position, and then controlling the pressure-resistant platform of the wafer-level aging inspection device to extend it laterally toward the heat sink inspection device; controlling the suction mechanism to place the heat sink on which the target wafer is placed within a lower sealing lid of the pressure-resistant platform; and after controlling the pressure-resistant platform to return to its original position, controlling the lower sealing lid to dock with the lid plate assembly to form an inspection chamber, thereby performing a wafer-level aging inspection.

13. the step of controlling a suction mechanism to clamp the heat sink on which the target wafer is placed, After confirming that any of the locking parts of the suction mechanism is in a released state, controlling the suction mechanism to move downward; a step of controlling any one of the suction components of the suction mechanism to suction the target wafer; controlling any one of the locking parts to clamp the heat sink; The control method according to claim 12, further comprising the step of controlling any one of the locking parts to be attached to the heat sink.

14. the step of controlling any one of the suction components of the suction mechanism to suction the target wafer, determining whether all of the suction components of the suction mechanism are in contact with the heat sink during the downward movement of the suction mechanism; If so, the control method of claim 13 further comprises the step of controlling the suction mechanism to subsequently move downward by a first preset distance, and then controlling the suction component to suction and closely attach the target wafer to the heat sink.

15. The step of controlling any one of the locking parts to clamp the heat sink includes: controlling one of the locking components to move toward the center line of the suction mechanism until it reaches a corresponding second target position; determining whether any of the locking components have reached the corresponding second destination position; If so, the control method of claim 13 further comprises controlling any of the locking parts to move upward a second preset distance so that a free end of any of the locking parts contacts a bottom of the heat sink, thereby clamping the heat sink.

16. The step of controlling any one of the locking parts to be attached to the heat sink includes: controlling any of the locking parts to adhere to the bottom of the heat sink; acquiring vacuum level information of a vacuum suction device connected to any of the locking components; determining whether the corresponding locking part is adsorbing the heat sink based on any of the vacuum level information; If so, the method of claim 13 further comprises controlling the suction mechanism to move the heat sink with the target wafer placed thereon upward to a first target position in conjunction with the suction mechanism.

17. After placing the heat sink with the target wafer on a mounting table of the heat sink inspection device, before controlling the mounting table to move it laterally toward the wafer level aging inspection device, acquiring position information of the target wafer in a wafer case; controlling a wafer acquisition device to grab the target wafer and transfer it to a wafer position calibration station based on the position information, thereby performing angle adjustment and eccentricity adjustment for the target wafer; The control method according to any one of claims 12 to 16, further comprising: controlling the wafer acquiring device to transfer the adjusted target wafer from the wafer position calibration station to the heat sink inspection device.

18. the step of placing the heat sink with the target wafer mounted on a mounting table of a heat sink inspection device and then controlling the mounting table to move it laterally toward a wafer-level aging inspection device, receiving the target wafer by passing it through a second support frame of the heat sink, and then controlling the second support frame to lower and separate it from the heat sink, thereby bringing the target wafer into close contact with the heat sink; attracting the target wafer by drawing a vacuum against a first vacuum suction gas flow path in the heat sink, and determining whether the target wafer is attracted to the heat sink and within a predetermined area of the heat sink; If so, the control method according to claim 12 further comprises the step of controlling the mounting base to extend from the side toward the wafer-level aging inspection apparatus to below a suction mechanism of a wafer transport apparatus.

19. the step of controlling the mounting base to return to its original position and then controlling the pressure-resistant platform of the wafer-level aging inspection device to extend it laterally toward the heat sink inspection device; controlling a second vacuum suction gas flow path in the pressure-resistant platform to suction the lower sealing lid; determining whether the lower sealing lid is suctioned based on vacuum level information of the second vacuum suction gas flow path; If so, the control method of claim 12 further comprises controlling a pressure-resistant platform of a wafer-level aging inspection apparatus to extend it laterally toward the heat sink inspection apparatus to below the suction mechanism.

20. After the step of controlling the suction mechanism to place the heat sink on which the target wafer is placed within the lower sealing lid of the pressure-resistant platform, a step of drawing a vacuum through a second vacuum suction gas passage in the pressure-resistant platform to suction the heat sink and the target wafer; removing the suction mechanism from the heat sink on which the target wafer is placed; The control method according to claim 12, further comprising the step of controlling the suction mechanism to return to its original position.

21. the step of controlling the pressure-resistant platform to return to its original position and controlling the lower sealing lid to dock with the lid plate assembly to form an inspection chamber, thereby performing a wafer-level aging inspection; controlling the pressure-resistant platform to return to its original position; acquiring position information of the target wafer; aligning the target wafer and the inspection probe based on the position information of the target wafer, thereby performing position adjustment for the target wafer; 13. The control method of claim 12, further comprising the step of controlling a push-up mechanism to push up the lower sealing lid upward, thereby connecting it to an upper lid plate assembly to form an inspection chamber, thereby performing a wafer-level aging inspection on the target wafer.

22. After the wafer level aging inspection is completed, controlling the lower sealing lid to separate from the lid plate assembly and lower onto the pressure-resistant platform; controlling the pressure-resistant platform to extend laterally toward the heat sink inspection device; controlling the suction mechanism to remove the heat sink on which the target wafer is placed from inside the lower sealing lid; controlling the pressure-resistant platform to return to its original position; controlling the mounting base of the heat sink inspection device to move it laterally toward the wafer-level aging inspection device; controlling the suction mechanism to place the heat sink on which the target wafer is placed on the mounting table; controlling the mount to return; and controlling a wafer acquisition device to transfer the wafer from on the heat sink into a wafer case.

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