Electronic devices with reduced ohmic-to-ohmic dimensions
JP2025527676APending Publication Date: 2025-08-22WOLFSPEED INC
Patent Information
- Application Number
- JP2025511537
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2022-08-23
- Filing Date
- 2023-08-22
- Publication Date
- 2025-08-22
Smart Images
Figure 2025527676000001_ABST
Abstract
A method for forming an ohmic contact on a semiconductor layer includes forming a silicon ohmic contact precursor on the semiconductor layer, depositing a layer of metal on the semiconductor layer including the silicon ohmic contact precursor, reacting the silicon ohmic contact precursor with the layer of metal to form a metal silicide ohmic contact on the semiconductor layer, and selectively removing the layer of metal from the semiconductor layer without removing the metal silicide contact from the semiconductor layer.
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Citation Information
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