PVT method and apparatus for process-safe production of single crystals.

The described containment vessel with a protective atmosphere and inert gas overpressure safely enables the use of reactive gases in PVT processes, addressing safety and cost issues in SiC single crystal production.

JP2025531120APending Publication Date: 2025-09-19PVA TEPLA
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Patent Information

Application Number
JP2025514843
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-09-16
Filing Date
2023-09-15
Publication Date
2025-09-19

AI Technical Summary

Technical Problem

The use of reactive gases like hydrogen in PVT processes for producing SiC single crystals poses safety hazards due to their flammability and reactivity, and existing equipment, often made of brittle fused silica, is prone to breakage, leading to potential explosions. Additionally, vacuum-tight containment vessels are complex and costly to maintain.

Method used

A containment vessel surrounding the process chamber is filled with a protective atmosphere, preferably inert gas, creating a positive overpressure to prevent reactive gases from igniting, and equipped with sensors to detect leaks or damage, ensuring safe operation and reducing equipment complexity and cost.

Benefits of technology

The method ensures safe and cost-effective production of SiC single crystals by preventing explosive reactions and allowing the use of reactive gases, while simplifying equipment maintenance and reducing the risk of leaks and explosions.

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Abstract

PVT method and apparatus for process-safe production of single crystals. To allow reactive gases such as hydrogen to be used as process gases in the PVT process, certain safeguards are required to ensure that the process can be performed reliably. The apparatus for performing the PVT process consists of a highly heatable growth cell placed within a process chamber whose walls are made of a heat-resistant material, typically quartz glass. The process chamber is filled with hydrogen through an inlet valve. The heating device consists of an induction coil that surrounds the process chamber at the level of the growth cell, heating the growth cell to temperatures in excess of 2,000°C and up to 2,400°C. The use of reactive gases poses problems in the event of damage to the chamber walls of the process chamber, which cannot be completely eliminated, and the reactive gases can mix with the ambient air to form ignitable gas mixtures that can quickly ignite in hot parts of the apparatus. The process chamber is therefore surrounded by a safety container filled with an inert gas.
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