Method of manufacturing light emitting device, and light emitting device

Abstract

To provide a method of manufacturing a light-emitting device with less color unevenness.SOLUTION: A method of manufacturing a light emitting device includes preparing an intermediate body including a substrate having a light emitting element disposed region and an outer region surrounding the light emitting element disposed region, and a light emitting element group having a plurality of light emitting elements disposed in the light emitting element disposed region, providing a holding part at four corners of the outer region, covering the light emitting element group and the holding part with an uncured rectangular wavelength conversion part having an area larger than an area of the light emitting element disposed region in a top view and containing a resin material such that four corners of the wavelength conversion part are in contact with the holding part, and curing the wavelength conversion part.SELECTED DRAWING: Figure 5D

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a light-emitting device, and a light-emitting device. [Background technology]

[0002] A light-emitting device is known that includes a light-emitting element, a first substrate having an element mounting area on an upper surface of which the light-emitting element is mounted, and a sheet-like light-transmitting member that covers the light-emitting element, with the outer edge of the lower surface of the light-transmitting member contacting the upper surface of the first substrate outside the element mounting area. The light-transmitting member contains, for example, a phosphor. Such a light-transmitting member can be obtained, for example, by arranging an uncured light-transmitting member that has been processed into a sheet shape so as to cover the light-emitting element, and then softening the light-transmitting member by heating or the like, and deforming the light-transmitting member so that the outer edge of the lower surface of the light-transmitting member contacts the upper surface of the first substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2022-184689 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the present disclosure is to provide a method for manufacturing a light emitting device with little color unevenness, and a light emitting device. [Means for solving the problem]

[0005] A manufacturing method of a light emitting device according to one embodiment of the present disclosure includes the steps of: preparing an intermediate body having a substrate having a light emitting element arrangement region and an outer region surrounding the light emitting element arrangement region, and a light emitting element group having a plurality of light emitting elements arranged in the light emitting element arrangement region; providing holding portions at four corners of the outer region; covering the light emitting element group and the holding portions with an uncured rectangular wavelength converting portion having an area larger than the area of ​​the light emitting element arrangement region in a top view and containing a resin material by contacting the four corners of the wavelength converting portion with the holding portions; and curing the wavelength converting portion.

[0006] A light emitting device according to one embodiment of the present disclosure includes a substrate having a light emitting element arrangement area, a light emitting element group having a plurality of light emitting elements arranged in the light emitting element arrangement area, a rectangular wavelength conversion unit that covers the light emitting element group and extends outward from the entire outer periphery of the light emitting element group when viewed from above, and a holding unit that is provided below the four corners of the wavelength conversion unit and in contact with the substrate and the wavelength conversion unit. [Effects of the Invention]

[0007] According to an embodiment of the present disclosure, it is possible to provide a method for manufacturing a light emitting device with little color unevenness, and a light emitting device. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a perspective view schematically illustrating a light emitting device according to an embodiment of the present invention. [Figure 2] 1 is a perspective view schematically illustrating a light emitting device according to an embodiment of the present invention, with part of the configuration thereof omitted. [Figure 3] FIG. 1 is a top view schematically showing a light emitting device according to an embodiment of the present invention. [Figure 4] FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. [Figure 5A] 5A to 5C are partial top views illustrating the manufacturing process of the light emitting device according to the embodiment. [Figure 5B] 5A to 5C are partial top views illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 5C]5A to 5C are partial top views illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 5D] 5A to 5C are partial cross-sectional views illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 5E] 5A to 5C are partial cross-sectional views illustrating a manufacturing process of the light emitting device according to the embodiment. [Figure 6] FIG. 10 is a top view illustrating a first modification of the position where the holding portion is provided. [Figure 7] FIG. 10 is a top view illustrating a second modification of the position where the holding portion is provided. DETAILED DESCRIPTION OF THE INVENTION

[0009] A light-emitting device according to the present disclosure (hereinafter, sometimes referred to as a "light-emitting device according to an embodiment") will be described below with reference to the drawings. In the following description, terms indicating specific directions or positions (e.g., "upper," "lower," and other terms including these terms) will be used as necessary. However, the use of these terms is intended to facilitate understanding of the invention with reference to the drawings, and the meaning of these terms does not limit the technical scope of the present disclosure. Furthermore, parts that appear with the same reference numerals in multiple drawings indicate the same or equivalent parts or components.

[0010] Furthermore, the embodiments shown below are intended to exemplify light-emitting devices and the like that embody the technical concepts of the present invention, and are not intended to limit the present invention thereto. Furthermore, unless otherwise specified, the dimensions, materials, shapes, relative arrangements, etc. of the components described below are intended for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, the content described in one embodiment may also be applicable to other embodiments and modified examples. Furthermore, the size and positional relationships of components shown in the drawings may be exaggerated for clarity. Furthermore, to avoid overly complex drawings, schematic diagrams may be used in which some elements are omitted, or end views may be used as cross-sectional views that show only the cut surface.

[0011] <Embodiment> The light emitting device according to the present disclosure comprises a substrate having a light emitting element arrangement area, a light emitting element group having a plurality of light emitting elements arranged in the light emitting element arrangement area, a rectangular wavelength conversion unit that covers the light emitting element group and extends outward from the entire outer periphery of the light emitting element group when viewed from above, and a holding unit that is provided below the four corners of the wavelength conversion unit and in contact with the substrate and the wavelength conversion unit.

[0012] [Light-emitting device 1] As an example of a light emitting device according to the present disclosure, a light emitting device 1 will be described. FIG. 1 is a perspective view schematically showing the light emitting device according to this embodiment. FIG. 2 is a perspective view schematically showing the light emitting device according to this embodiment with part of its configuration omitted. FIG. 3 is a top view schematically showing the light emitting device according to this embodiment. FIG. 4 is a cross-sectional view taken along line IV-IV in FIG. 3.

[0013] In each drawing, for reference, mutually orthogonal X-, Y-, and Z-axes are shown as necessary. The direction parallel to the X-axis is called the X-direction, the direction parallel to the Y-axis is called the Y-direction, and the direction parallel to the Z-axis is called the Z-direction. In the X-direction, the direction in which the arrow points is called the +X-direction, and the direction opposite the +X-direction is called the -X-direction. In the Y-direction, the direction in which the arrow points is called the +Y-direction, and the direction opposite the +Y-direction is called the -Y-direction. In the Z-direction, the direction in which the arrow points is called the +Z-direction, and the direction opposite the +Z-direction is called the -Z-direction. However, these do not limit the orientation of the light-emitting device when in use, and the orientation of the light-emitting device is arbitrary. Viewing an object from the +Z-direction toward the -Z-direction is called top view.

[0014] As illustrated in FIGS. 1 to 4, the light emitting device 1 includes a substrate 10, a light emitting element group 30g, a wavelength converting section 40, and a holding section 50. The substrate 10 includes a substrate 10a, a light emitting element group 30g, a wavelength converting section 40b, and a holding section 50c.

[0015] The substrate 10 has, on its upper surface 10a, a light-emitting element arrangement region 10r in which the light-emitting element group 30g is arranged, and an outer region 10s surrounding the light-emitting element arrangement region 10r. The outer region 10s is located outside the light-emitting element arrangement region 10r and is covered by the wavelength converting section 40. The substrate 10 may also have, on its upper surface 10a, a region outside the outer region 10s in which terminals, wiring, and the like are arranged.

[0016] The light emitting element group 30g has a plurality of light emitting elements 30. The plurality of light emitting elements 30 are arranged in a light emitting element arrangement region 10r on the upper surface 10a of the substrate 10. The plurality of light emitting elements 30 can be arranged, for example, in a matrix form when viewed from above. The plurality of light emitting elements 30 can be driven individually. For example, the plurality of light emitting elements 30 may be driven individually by using the substrate 10 as a semiconductor integrated circuit substrate such as an ASIC (Application Specific Integrated Circuit), or may be driven individually by an electric circuit provided outside the light emitting device 1.

[0017] The wavelength conversion section 40 covers the light-emitting element group 30g and extends outward from the entire outer periphery of the light-emitting element group 30g in a top view. The wavelength conversion section 40 is rectangular in a top view. In a top view, the size of the wavelength conversion section 40 is equal to the combined size of the light-emitting element arrangement region 10r and the outer region 10s. The wavelength conversion section 40 converts light incident from each light-emitting element 30 into light of a different wavelength and emits the converted light. The wavelength conversion section 40 may emit a portion of the incident light without converting it into light of a different wavelength, or may convert all of the incident light into light of a different wavelength and emit the converted light. The thickness from the top surface of the light-emitting element 30 to the top surface of the wavelength conversion section 40 may be uniform or may vary for each light-emitting element 30.

[0018] The holding units 50 are provided at least at the four corners of the outer region 10s of the upper surface 10a of the substrate 10. In the illustrated example, the holding units 50 are arranged only at the four corners of the outer region 10s. The holding units 50 are provided below the four corners of the wavelength converting unit 40, in contact with the upper surface 10a of the substrate 10 and the lower surface of the wavelength converting unit 40. The number of holding units 50 is not limited to four.

[0019] The light emitting device 1 may further include a package substrate 20, a wire 70, a covering member 80, and a reflective member 90. In the example of FIGS. 1 to 4, the substrate 10 is mounted on the upper surface 20a of the package substrate 20. On the upper surface 10a of the substrate 10, a first terminal 11 is arranged in the outer region 10s or further outside the outer region 10s. The package substrate 20 is larger than the substrate 10 in a top view. On the upper surface 20a of the package substrate 20, a second terminal 22 is arranged outside the region where the substrate 10 is mounted. The first terminal 11 of the substrate 10 is electrically connected to the second terminal 22 of the package substrate 20 by a wire 70. The first terminal 11, the second terminal 22, and the wire 70 are covered by a covering member 80 arranged on the outer periphery of the upper surface 10a of the substrate 10 and the outer periphery of the upper surface 20a of the package substrate 20. The reflective member 90 exposes the upper surfaces of the plurality of light emitting elements 30 and covers the side surfaces.

[0020] 2, for convenience of illustration, part of the wavelength converting unit 40 and part of the covering member 80 are omitted, and part of the light emitting element 30 and the wire 70 are visualized. Also, in FIG. 4, for convenience of illustration, the light emitting element 30 located in the −X direction from the cross section is indicated by a dashed line.

[0021] As described above, in the light emitting device 1, the holding units 50 are provided at the four corners of the outer region 10s of the upper surface 10a of the substrate 10. The holding units 50 contact the upper surface 10a of the substrate 10 and the lower surface of the wavelength conversion unit 40 below the four corners of the wavelength conversion unit 40. If there are gaps between the four corners of the wavelength conversion unit 40 and the substrate 10, the wavelength conversion unit 40 is likely to curl up from the gaps. However, by providing the holding units 50, the gaps are eliminated, and the four corners of the wavelength conversion unit 40 are in close contact with the substrate 10 via the holding units 50. This makes it difficult for the wavelength conversion unit 40 to curl up.

[0022] In the light emitting device 1, the wavelength converting section 40 is less likely to curl up, so there is less risk that the light emitted by the light emitting element 30 will leak out of the light emitting device 1 without being wavelength converted from the part where the wavelength converting section 40 is curled up, causing color unevenness. In other words, the light emitting device 1 is able to emit light with less color unevenness to the outside by providing the holding section 50 and suppressing curling of the wavelength converting section 40.

[0023] Each component of the light emitting device 1 will be described below.

[0024] (Substrate 10) The substrate 10 includes a flat support member and wiring arranged on the upper surface of the support member. The wiring is arranged in a light-emitting element arrangement region 10r of the substrate 10. The substrate 10 has a plurality of first terminals 11 arranged on the upper surface 10a outside the light-emitting element arrangement region 10r, and the first terminals 11 are electrically connected to the wiring arranged in the light-emitting element arrangement region 10r.

[0025] In a top view, the substrate 10 and the light-emitting element arrangement region 10r may be, for example, a rectangle having long and short sides. In the light-emitting element arrangement region 10r, for example, a plurality of light-emitting elements 30 are arranged in a matrix. The plurality of light-emitting elements 30 are electrically connected to one of the first terminals 11. The plurality of light-emitting elements 30 may be, for example, grouped into a predetermined number of light-emitting elements 30, and connected in series or parallel to the first terminals 11. The light-emitting element arrangement region 10r may have, for example, a long side length of 8 mm or more and 18 mm or less and a short side length of 2 mm or more and 6 mm or less.

[0026] Each of the first terminals 11 has, for example, a substantially circular, elliptical, or rectangular shape. The first terminals 11 are spaced apart from one another and arranged in a row along opposing long sides of the rectangular light-emitting element arrangement region 10r on the upper surface 10a of the substrate 10, sandwiching the light-emitting element arrangement region 10r. The interval between adjacent first terminals 11 may or may not be constant. The interval between adjacent first terminals 11 may be, for example, 20 μm or more and 100 μm or less. One end of a wire 70 is connected to the first terminal 11.

[0027] The substrate 10 is, for example, a semiconductor substrate such as silicon. On the upper surface 10a of the substrate 10, areas where no wiring is arranged are covered with, for example, an insulating film. Wiring may also be arranged inside or on the lower surface of the support member. For example, the substrate 10 can be an integrated circuit substrate on which circuits for individually driving and controlling the plurality of light-emitting elements 30 are integrated.

[0028] Examples of materials for the first terminal 11 and the wiring include metals such as Cu, Ag, Au, Al, Pt, Ti, W, Pd, Fe, and Ni, and / or alloys containing at least these metals.

[0029] (Package substrate 20) The package substrate 20 includes a flat substrate and wiring arranged at least on the upper surface side of the substrate. The package substrate 20 has a substrate mounting area 20r on its upper surface 20a for mounting the substrate 10, and further includes second terminals 22 on the upper surface 20a outside the substrate mounting area 20r. The substrate mounting area 20r is an area on which the substrate 10 is mounted. The substrate mounting area 20r is set as an area having approximately the same area as the shape of the substrate 10 when viewed from above. If the substrate 10 is rectangular when viewed from above, the substrate mounting area 20r can also be rectangular. Here, "approximately the same" is intended to include within an allowable range errors caused by material tolerances and mounting tolerances.

[0030] Each second terminal 22 has, for example, a substantially circular, elliptical, or rectangular shape. The second terminals 22 are spaced apart from one another on the upper surface 20a of the package substrate 20 and arranged in a row along opposing long sides of the rectangle, sandwiching the substrate mounting region 20r. The interval between adjacent second terminals 22 may or may not be constant. The interval between adjacent second terminals 22 may be, for example, 20 μm or more and 100 μm or less. The other end of the wire 70 is connected to the second terminal 22.

[0031] The base material constituting the package substrate 20 is preferably a material with high heat dissipation properties, and more preferably a material with high light-blocking properties and base material strength. Specific examples include metals such as Al and Cu; ceramics such as aluminum oxide, aluminum nitride, silicon nitride, and mullite; resins such as phenolic resin, epoxy resin, polyimide resin, BT resin (bismaleimide triazine resin), and polyphthalamide (PPA); and composite materials composed of resin and metal or ceramic (e.g., an inlay substrate in which a metal member is embedded in a resin). The base material may be flat, or may have a recess on its upper surface. In this case, the package substrate 20 has a recess whose bottom serves as a substrate mounting area 20r, and the substrate 10 can be mounted in the recess.

[0032] The package substrate 20 may include wiring for mounting the substrate 10 on the surface of the substrate mounting area 20r.

[0033] (Light emitting element 30) The light-emitting element 30 may be, for example, a square with a side measuring 40 μm to 100 μm in top view. However, the shape of the light-emitting element 30 is not limited to a square, and may be rectangular, polygonal, circular, or the like. The light-emitting element 30 has positive and negative electrodes on the same side, and is flip-chip mounted on the substrate 10 with the side with the electrodes as the bottom surface. In this case, the top surface opposite the surface on which the electrodes are arranged is the main light extraction surface of the light-emitting element 30.

[0034] In the light emitting device 1, the light emitting elements 30 are mounted on the substrate 10 in a row and column direction, aligned at predetermined intervals. The size and number of the light emitting elements 30 to be used can be selected appropriately depending on the type of light emitting device to be obtained. In particular, it is preferable to mount a larger number of smaller light emitting elements 30 at a higher density. This makes it possible to control the illumination range of the light emitted from the light emitting device 1 with a larger number of divisions. Such a light emitting device 1 can be used as a light source for a high-resolution lighting system. For example, the number of light emitting elements 30 provided in the light emitting device 1 can be between 1,000 and 100,000.

[0035] The light-emitting element 30 is, for example, a light-emitting diode. The light-emitting element 30 includes a semiconductor structure. The semiconductor structure includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer sandwiched between the n-side semiconductor layer and the p-side semiconductor layer. The active layer may have a single quantum well (SQW) structure or a multiple quantum well (MQW) structure including multiple well layers. The active layer is configured to be able to emit visible light or invisible light such as ultraviolet light or infrared light.

[0036] The semiconductor structure may include multiple light-emitting sections, each including an n-side semiconductor layer, an active layer, and a p-side semiconductor layer. When the semiconductor structure includes multiple light-emitting sections, each light-emitting section may include well layers with different emission peak wavelengths or well layers with the same emission peak wavelength. The same emission peak wavelength also includes cases where the emission peak wavelengths vary by a few nanometers. The combination of emission peak wavelengths of the multiple light-emitting sections can be appropriately selected. For example, when the semiconductor structure includes two light-emitting sections, the combination of light emitted by each light-emitting section may be blue light with blue light, green light with green light, ultraviolet light with ultraviolet light, blue light with green light, blue light with ultraviolet light, or green light with ultraviolet light. For example, when the semiconductor structure includes three light-emitting sections, the combination of light emitted by each light-emitting section may be blue light, green light, and red light. Each light-emitting section may include one or more well layers with emission peak wavelengths different from those of the other well layers.

[0037] As the light emitting element 30, for example, a light emitting element capable of emitting blue light (light with a wavelength of 430 to 490 nm) can be used. However, the light emitting color of the light emitting element 30 can be selected from any wavelength depending on the application. For example, as a light emitting element for blue (light with a wavelength of 430 to 490 nm) or green (light with a wavelength of 495 to 565 nm), a nitride-based semiconductor (In x Al y Ga 1-x-y N (0≦x, 0≦y, x+y≦1), GaP, etc. can be used. As a red light emitting element (light with a wavelength of 610 to 700 nm), GaAlAs, AlInGaP, etc. can be used in addition to nitride-based semiconductor elements.

[0038] The light emitting element 30 is bonded to the wiring arranged in the light emitting element arrangement region 10r of the substrate 10 by a conductive bonding member. When flip-chip mounting the light emitting element 30 on the substrate 10, bumps made of a metal material such as Au, Ag, Cu, or Al can be used as the bonding member. Alternatively, solder such as an AuSn-based alloy or Sn-based lead-free solder can be used as the bonding member. Alternatively, a conductive adhesive made of resin containing conductive particles of metal or the like can be used as the bonding member. A plating method may be used to bond the light emitting element 30 to the substrate 10. Examples of plating materials include Cu and Au. Alternatively, the electrodes of the light emitting element 30 and the wiring of the substrate 10 may be in direct contact with each other without a bonding member.

[0039] (wavelength conversion unit 40) The thickness of the wavelength converting portion 40 is, for example, 10 μm or more and 40 μm or less. Since such a relatively thin wavelength converting portion 40 is prone to curling up at its outer periphery, there is great technical significance in providing the holding portion 50 to improve adhesion to the substrate 10.

[0040] The wavelength converting portion 40 includes, for example, a resin and a phosphor. Examples of the resin include known translucent resins such as silicone resin and epoxy resin. Among them, silicone resin (specifically, translucent resins such as phenyl silicone resin and dimethyl silicone resin) is preferred for its excellent reliability.

[0041] The phosphor is an yttrium-aluminum-garnet phosphor (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate phosphors (e.g., Ca8MgSiO 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 oxynitride phosphors such as (La,Y)3Si6N 11 :Ce), BSESN phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr,Ca)AlSiN3:Eu), nitride phosphors such as KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x:Mn where x satisfies 0 < x < 1), or a fluoride-based phosphor such as an MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a quantum dot having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), a II-VI group quantum dot (e.g., CdSe), a III-V group quantum dot (e.g., InP), or a quantum dot having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0042] When the light-emitting element 30 can emit blue light, the wavelength conversion unit 40 can contain, for example, a phosphor that can be excited by blue light and emit yellow light. In this case, examples of the phosphor contained in the wavelength conversion unit 40 include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce). According to such a configuration, white light can be obtained by mixing the blue light that has passed through the wavelength conversion unit 40 and the yellow light emitted by the wavelength conversion unit 40.

[0043] (Holding part 50) The holding part 50 is preferably about the same thickness as the light-emitting element 30. Thereby, since the gaps between the four corners of the wavelength conversion unit 40 and the substrate 10 are likely to be filled, the four corners of the wavelength conversion unit 40 are likely to be in close contact with the substrate 10 via the holding part 50. For example, if the thickness of the light-emitting element 30 is 10 μm, the thickness of the holding part 50 can be 7 μm or more and 13 μm.

[0044] The holding unit 50 includes, for example, a resin. Examples of the resin include those exemplified for the wavelength conversion unit 40. The holding unit 50 may contain a light-reflecting material. This allows light emitted from the light-emitting element 30 and reaching the holding unit 50 to be reflected by the holding unit 50 toward the wavelength conversion unit 40, thereby improving the light extraction efficiency of the light-emitting device 1. Examples of light-reflecting materials that can be used include titanium oxide, aluminum oxide, zinc oxide, barium carbonate, barium sulfate, boron nitride, aluminum nitride, and glass filler. The holding unit 50 may also contain a light-absorbing material. This allows light emitted from the light-emitting element 30 and reaching the holding unit 50 to be absorbed by the holding unit 50, thereby suppressing the generation of stray light in the light-emitting device 1. Examples of light-absorbing materials that can be used include pigments, carbon black, titanium black, and graphite.

[0045] (Wire 70) The wires 70 can be made of metals such as Au, Ag, Cu, Pt, and Al and / or alloys containing at least these metals. Au, which has excellent thermal resistance, is particularly preferred. The diameter of the wires 70 can be, for example, 15 μm to 50 μm. The wires 70 can be arranged across the long sides of the substantially rectangular substrate 10 in a top view, for example, so as to be substantially perpendicular to the long sides. Furthermore, among the multiple wires 70 arranged in a row along the long sides of the substrate 10, the wires 70 located in the center of the row can be arranged so as to be substantially perpendicular to the long sides of the substrate 10 in a top view, as described above, while the wires 70 located at the ends of the row can be arranged diagonally relative to the long sides of the substrate 10 in a top view. The interval at which the wires 70 are aligned can be 20 μm to 100 μm.

[0046] (Covering member 80) The covering member 80 is a light-blocking member that covers the wires 70 outside the light-emitting element arrangement region 10r. Note that, as an example, the covering member 80 is arranged in a frame shape in a top view so as to cover the wires 70 and surround the light-emitting element arrangement region 10r.

[0047] The covering member 80 is disposed at a distance from the light emitting element 30 in a top view. The covering member 80 is preferably disposed so that its height (i.e., the distance from the upper surface 20a of the package substrate 20 to the upper surface of the covering member 80) is greatest directly above the top of the wire 70. In other words, the covering member 80 is preferably disposed so that its top overlaps the top of the wire 70.

[0048] Examples of the covering member 80 include resins containing a filler with light-blocking properties. Examples of the base resin include silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, and acrylic resin. Examples of the light-blocking filler include the light-reflecting materials and light-absorbing materials exemplified for the holding unit 50. Specifically, the exterior color of the covering member 80 may be white, which has excellent light reflectivity, black, which has excellent light absorption, or gray, which has both light reflectivity and light absorption properties. The covering member 80 may also be formed by stacking multiple resin layers. In particular, considering deterioration of the resin due to light absorption, it is preferable that the covering member 80 use a white resin with light reflectivity on at least the outermost surface.

[0049] (Reflective member 90) The reflective member 90 is a member that covers the upper surface 10a of the substrate 10 and the side surfaces of the light-emitting elements 30. The upper surface of the light-emitting elements 30 is exposed from the reflective member 90. The reflective member 90 may cover the area between the lower surface of the light-emitting elements 30 and the substrate 10. The reflective member 90 can reflect light emitted from the side surfaces of the light-emitting elements 30 upward. This can improve the light extraction efficiency of the light-emitting device 1. In addition, when the light-emitting elements 30 are individually lit, the boundary between the light-emitting area and the non-light-emitting area can be made clear. This improves the contrast ratio between the light-emitting area and the non-light-emitting area.

[0050] The reflective member 90 is preferably made of a soft resin with relatively low elasticity and excellent shape-following ability. The reflective member 90 can be made of a resin material with good light transmissivity and insulating properties, such as a thermosetting resin such as epoxy resin or silicone resin, containing particles of a light-reflecting material. Examples of the light-reflecting material include the same light-reflecting materials as those exemplified for the holding portion described above. The reflective member 90 may also contain the light-absorbing material exemplified for the holding portion described above.

[0051] The light emitting device 1 having the above configuration can be used, for example, as a light source for a vehicle headlight. For example, it can be used as a light source that can select an illumination area and irradiate it with light, such as a headlight with an ADB (Adaptive Driving Beam) function or a road surface projection function. In this case, since the light emitting device 1 prevents the wavelength conversion unit 40 from curling up, it is possible to realize a headlight with little color unevenness using a single light source.

[0052] [Method of manufacturing the light emitting device 1] Hereinafter, each manufacturing step of the manufacturing method of the light emitting device according to the embodiment will be described with reference to the drawings.

[0053] Figures 5A to 5C are partial top views illustrating the manufacturing process of the light emitting device according to this embodiment, and Figures 5D and 5E are partial cross-sectional views illustrating the manufacturing process of the light emitting device according to this embodiment.

[0054] (Step of Preparing an Intermediate Body Having a Substrate and a Group of Light-Emitting Elements) First, as shown in Figure 5A, an intermediate body is prepared which includes a substrate 10 having a light-emitting element arrangement region 10r and an outer region 10s surrounding the light-emitting element arrangement region 10r, and a light-emitting element group 30g having a plurality of light-emitting elements 30 arranged in the light-emitting element arrangement region 10r.

[0055] Specifically, a substrate 10 is prepared, which has a light-emitting element arrangement region 10r and first terminals 11 arranged outside the light-emitting element arrangement region 10r on its upper surface 10a. The substrate 10 can be prepared, for example, by preparing a flat support member made of silicon or the like, and forming wiring and the first terminals 11 by plating, sputtering, vapor deposition, or the like. A plurality of light-emitting elements 30 are also prepared. The light-emitting elements 30 can be prepared by some or all of multiple processes, such as forming a semiconductor laminate and forming electrodes. In the description of the manufacturing method, "preparing" components does not necessarily mean manufacturing the components, but also includes acquiring the components, such as purchasing or receiving the components.

[0056] Next, the light emitting element 30 is placed in the light emitting element arrangement region 10r of the substrate 10 to form an intermediate body. The light emitting element 30 can be mounted in the light emitting element arrangement region 10r on the upper surface 10a of the substrate 10 by flip-chip mounting or the like. After the light emitting element 30 is placed in the light emitting element arrangement region 10r of the substrate 10, a reflective member 90 may be placed between the lower surface of the light emitting element 30 and the upper surface 10a of the substrate 10. For example, after the light emitting element 30 is placed on the substrate 10, a mask is placed to cover the first terminal 11 and expose the light emitting element arrangement region 10r. Then, uncured white resin or the like is placed in an area separated from the light emitting element 30, and the white resin or the like is allowed to flow toward the lower surface of the light emitting element 30 and cured. After curing, the mask is removed, and the first terminal 11 is exposed from the reflective member 90.

[0057] (Step of providing a holding portion) 5B, holding portions 50 are provided at the four corners of the outer region 10s. The holding portions 50 can be provided by preparing a resin with a high viscosity of, for example, about 400 to 550 Pa s and applying the resin in a drawing or dot pattern using a molding device.

[0058] The holding section 50 preferably has a thickness approximately the same as that of the light emitting element 30. This makes it easier to fill the gaps between the four corners of the wavelength conversion section 40 and the substrate 10 when the wavelength conversion section 40 is arranged in a later process, and therefore makes it easier for the four corners of the wavelength conversion section 40 to come into close contact with the substrate 10 via the holding section 50.

[0059] It is preferable that the holding part 50 has a shape with a relatively flat upper surface rather than a mountain shape. This increases the contact area between the four corners of the wavelength conversion part 40 and the upper surface of the holding part 50 when the wavelength conversion part 40 is arranged in a later process, thereby improving the adhesion between the wavelength conversion part 40 and the holding part 50 and making it less likely that the wavelength conversion part 40 will curl up.

[0060] (Process of covering the light emitting element group and the holding part with the wavelength conversion part) Next, as shown in FIG. 5C , an uncured, rectangular wavelength converting section 40 containing a resin material and having an area larger than the light-emitting element arrangement region 10r in a top view is placed in contact with the holding section 50 at its four corners, thereby covering the light-emitting element group 30g and the holding section 50. Specifically, for example, a sheet-shaped member having a predetermined size is prepared as the wavelength converting section 40, and the four corners of this member are placed in contact with the holding section 50 to cover the light-emitting element group 30g and the holding section 50. The wavelength converting section 40 may be fixed to the light-emitting element group 30g and the holding section 50 via a translucent bonding member such as resin, or may be fixed without a bonding member by utilizing the tackiness of the wavelength converting section 40. The wavelength converting section 40 is placed so that the first terminal 11 is exposed.

[0061] (Step of curing the wavelength conversion part) 5D, the wavelength converting portion 40 is hardened by heating, whereby the wavelength converting portion 40 is fixed onto the light emitting element group 30g and the holder 50.

[0062] 5B, the holding unit 50 is preferably left uncured or semi-cured in the step shown in Fig. 5B and then cured together with the wavelength converting unit 40 in the step shown in Fig. 5D. In this way, the shape of the upper surface of the holding unit 50 follows the shape of the lower surface of the wavelength converting unit 40, thereby improving adhesion between the wavelength converting unit 40 and the holding unit 50.

[0063] 5E, if the lower surface 40a of the wavelength converting unit 40 is rough, the upper surface of the holding unit 50 will also become rough to match the lower surface 40a by curing the holding unit 50 simultaneously with the wavelength converting unit 40. This increases the contact area between the lower surface 40a of the wavelength converting unit 40 and the upper surface of the holding unit 50, improving adhesion between the wavelength converting unit 40 and the holding unit 50 and making it less likely for the wavelength converting unit 40 to curl up.

[0064] Since the wavelength converting unit 40 contains phosphor particles, the phosphor particles are exposed and / or protrude from the lower surface 40a of the wavelength converting unit 40. Therefore, the lower surface 40a of the wavelength converting unit 40 has a certain degree of roughness.

[0065] In this way, the manufacturing method of the light emitting device 1 provides holding portions at the four corners of the outer region 10s, and brings the four corners of the wavelength conversion portion 40 into contact with the holding portions 50. This makes it possible to prevent the wavelength conversion portion 40 from curling up.

[0066] If the holding portions 50 were not provided, a gap of approximately 10 μm would be created between the outer periphery of the wavelength conversion portion 40 and the substrate 10, which would cause the outer periphery of the wavelength conversion portion 40 to easily curl up due to thermal contraction when the wavelength conversion portion 40 hardens. Curling is particularly likely to occur starting from the four corners of the wavelength conversion portion 40. In contrast, in the manufacturing method of the light emitting device 1, the holding portions 50 are provided at the four corners of the outer region 10s, so there is no gap between the wavelength conversion portion 40 and the substrate 10 in the areas where the holding portions 50 are provided. Therefore, when the wavelength conversion portion 40 hardens, the four corners of the wavelength conversion portion 40 are in close contact with the substrate 10 via the holding portions 50. This makes it less likely for the wavelength conversion portion 40 to curl up.

[0067] It is preferable that 60% or more of the area of ​​the upper surface of the holding part 50 be in contact with the wavelength converting part 40. This improves the adhesion between the wavelength converting part 40 and the holding part 50, making it even more difficult for the wavelength converting part 40 to curl up.

[0068] The manufacturing process of the light emitting device according to this embodiment may further include the following steps.

[0069] (Step of placing the substrate on the package substrate) A package substrate 20 is prepared, which has a substrate mounting area 20r on which the substrate 10 is mounted, and second terminals 22 located outside the substrate mounting area 20r, on its upper surface 20a. The package substrate 20 can be prepared, for example, by forming wiring such as Cu and the second terminals 22 on a flat support member made of metal, ceramic, or the like by plating, sputtering, vapor deposition, or the like. Next, the substrate 10 on which the light-emitting elements 30 are mounted is placed on the substrate mounting area 20r of the package substrate 20. The substrate 10 and the package substrate 20 can be bonded via a bonding material such as a sintered body containing Ag or a resin material. This step can be performed, for example, between the step of preparing the substrate and the light-emitting element group and the step of providing the holder.

[0070] (Process of connecting with wire 70) The first terminal 11 of the substrate 10 and the second terminal 22 of the package substrate 20 are connected by the wire 70. For example, the wire 70 is first connected to the first terminal 11 of the substrate 10, and then connected to the second terminal 22 of the package substrate 20. By connecting the wire 70 in this order, the top of the wire 70 can be positioned closer to the first terminal 11. This allows the wire 70 to be positioned along the step between the substrate 10 and the package substrate 20. Therefore, in the step of arranging the covering member 80 described below, the amount of resin disposed below the wire 70 is reduced, thereby reducing the risk of breakage of the wire 70 due to thermal expansion of the covering member 80. This step can be performed, for example, between the step of preparing the substrate and the light-emitting element group and the step of providing a holding portion, and after the step of placing the substrate on the package substrate.

[0071] (Step of placing the covering member 80) A covering member 80 that covers the first terminals 11, the second terminals 22, and the wires 70 is disposed on the outer periphery of the upper surface 10a of the substrate 10 and on the outer periphery of the upper surface 20a of the package substrate 20. The covering member 80 can be disposed, for example, by supplying uncured resin to a predetermined position using a dispenser or the like and then curing it. Note that the covering member 80 may be disposed after the wavelength conversion unit 40 is disposed. This step can be performed, for example, after the step of curing the wavelength conversion unit.

[0072] <Modification> FIG. 6 is a top view illustrating a first modification of the positions at which the holding portions are provided, and similarly to FIG. 5B, shows a state before the wavelength conversion portion is disposed. As shown in FIG. 6, the holding portions 50 may be provided at the four corners of the outer region 10s and at a part other than the four corners of the outer region 10s. In the example of FIG. 6, three more holding portions 50 are provided between two holding portions 50 located at the corners on the outside of the opposing long sides of the light-emitting element group 30g. Four or more holding portions 50 may be provided between two holding portions 50 located at the corners. Furthermore, one or more holding portions 50 may be provided between two holding portions 50 located at the corners on the outside of the opposing short sides of the light-emitting element group 30g.

[0073] In this way, by providing the holding portions 50 at the four corners of the outer region 10s and at a portion other than the four corners of the outer region 10s, the wavelength conversion portion 40 is in close contact with the substrate 10 via the holding portions 50 at more positions on the outer periphery of the wavelength conversion portion 40. This further prevents the wavelength conversion portion 40 from curling up.

[0074] Fig. 7 is a top view illustrating a second modification of the position where the holding portion is provided, and shows the state before the wavelength conversion portion is disposed, similar to Fig. 5B. As shown in Fig. 7, the holding portion 50 may be provided over the entire outer region 10s. That is, the holding portion 50 may be provided circumferentially so as to surround the light-emitting element group 30g.

[0075] In this way, by providing the holding parts 50 over the entire outer region 10s, the wavelength converting part 40 is in close contact with the substrate 10 via the holding parts 50 at all positions on the outer periphery of the wavelength converting part 40. This makes it possible to further suppress curling of the wavelength converting part 40 compared to the case of FIG.

[0076] Although the preferred embodiments have been described in detail above, the present invention is not limited to the above-described embodiments, and various modifications and substitutions can be made to the above-described embodiments without departing from the scope of the claims.

[0077] In addition to the above-described embodiments, the following supplementary notes are also disclosed. (Appendix 1) a step of preparing an intermediate body including a substrate having a light-emitting element arrangement region and an outer region surrounding the light-emitting element arrangement region, and a light-emitting element group having a plurality of light-emitting elements arranged in the light-emitting element arrangement region; Providing holding portions at four corners of the outer region; a step of covering the light emitting element group and the holding portion with an uncured rectangular wavelength converting portion that has an area larger than an area of ​​the light emitting element arrangement region when viewed from above and contains a resin material, by bringing four corners of the wavelength converting portion into contact with the holding portion; and curing the wavelength converting portion. (Appendix 2) 2. The method for manufacturing a light emitting device according to claim 1, wherein the holding portions are provided at four corners of the outer region and at a part other than the four corners of the outer region. (Appendix 3) 3. The method for manufacturing a light emitting device according to claim 2, wherein the holding portion is provided over the entire outer region. (Appendix 4) 4. The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the upper surface of the holding part is rough. (Appendix 5) 5. The method for manufacturing a light-emitting device according to any one of claims 1 to 4, wherein the holding portion contains a light-reflecting material. (Appendix 6) 6. The method for manufacturing a light emitting device according to claim 1, wherein 60% or more of the area of ​​the upper surface of the holding part is in contact with the wavelength conversion part. (Appendix 7) 7. The method for manufacturing a light emitting device according to any one of claims 1 to 6, wherein the wavelength converting portion has a thickness of 10 μm or more and 40 μm or less. (Appendix 8) a substrate having a light emitting element arrangement region; a light emitting element group having a plurality of light emitting elements arranged in the light emitting element arrangement region; a rectangular wavelength converting portion that covers the light emitting element group and extends outward from the entire outer periphery of the light emitting element group in a top view; a holder provided below the four corners of the wavelength converting portion and in contact with the substrate and the wavelength converting portion; [Explanation of symbols]

[0078] 1. Light-emitting device 10 Substrate 10a Top 10r Light emitting element placement area 10s outer area 11 1st terminal 20 Package substrate 20a top side 20r Substrate placement area 22 2nd terminal 30 Light-emitting element 30g light emitting element group 40 Wavelength conversion unit 40a Bottom side 50 Holding part 70 wire 80 Covering material 90 Reflective material

Claims

1. a step of preparing an intermediate body including a substrate having a light-emitting element arrangement region and an outer region surrounding the light-emitting element arrangement region, and a light-emitting element group having a plurality of light-emitting elements arranged in the light-emitting element arrangement region; providing holding portions at four corners of the outer region; a step of covering the light-emitting element group and the holding portion with an uncured rectangular wavelength converting portion that has an area larger than an area of ​​the light-emitting element arrangement region when viewed from above and that contains a resin material, by bringing four corners of the wavelength converting portion into contact with the holding portion; and curing the wavelength converting portion.

2. The method for manufacturing a light emitting device according to claim 1 , wherein the holding portions are provided at four corners of the outer region and at a part other than the four corners of the outer region.

3. The method for manufacturing a light emitting device according to claim 2 , wherein the holding portion is provided over the entire outer region.

4. The method for manufacturing a light emitting device according to claim 1 , wherein the upper surface of the holding portion is a rough surface.

5. The method for manufacturing a light emitting device according to claim 1 , wherein the holding portion contains a light reflective material.

6. The method for manufacturing a light emitting device according to claim 1 , wherein 60% or more of an area of ​​an upper surface of the holding portion is in contact with the wavelength converting portion.

7. The method for manufacturing a light emitting device according to claim 1 , wherein the wavelength converting portion has a thickness of 10 μm or more and 40 μm or less.

8. a substrate having a light emitting element arrangement region; a light emitting element group having a plurality of light emitting elements arranged in the light emitting element arrangement region; a rectangular wavelength converting portion that covers the light emitting element group and extends outward from the entire outer periphery of the light emitting element group in a top view; a holder provided below four corners of the wavelength converting portion and in contact with the substrate and the wavelength converting portion;

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