Semiconductor device

Abstract

To provide a semiconductor device capable of reducing an electric resistance value of a gate electrode while reducing an area ratio of the gate electrode.SOLUTION: A semiconductor device (DEV1, DEV2) includes a semiconductor substrate (SUB) having an upper surface (F1), a first source layer (SL1) formed in the semiconductor substrate and disposed on the upper surface, a first drain layer (DL1) formed in the semiconductor substrate and disposed on the upper surface so as to be separated from the first source layer in a first direction (DR1), a first drain insulating film (DRIF1) formed on the upper surface and located between the first source layer and the first drain layer in the first direction, a first gate insulating film (GI1) formed on the upper surface and located between the first drain film and the first source layer in the first direction, and a first gate electrode (GE1) formed on the first gate insulating film and the first drain insulating film.SELECTED DRAWING: Figure 1

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