Semiconductor light emitting device

Abstract

To provide a structure capable of efficiently radiating heat generated by a light-emitting element via a substrate in spite of a minute semiconductor light-emitting device.SOLUTION: The substrate 10 is a ceramic substrate. A surface S is defined as a surface extending from the side 11a of the pad 11 at an angle of 45 degrees with respect to the thickness direction of the substrate 10. One side 11a of the edge of the lower surface of the substrate 10 corresponding to the side 10a of the pad 11 is located at a position coinciding with a line La where the surface S and the lower surface of the substrate 10 intersect with each other or outside the line La.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present invention relates to a semiconductor light emitting device using a semiconductor light emitting element. [Background technology]

[0002] 2. Description of the Related Art A semiconductor light emitting device using a semiconductor light emitting element has a small structure called a chip size package, in which the top surface size is close to that of the semiconductor light emitting element, as disclosed in, for example, Patent Document 1.

[0003] The semiconductor light emitting device of Patent Document 1 uses a resin substrate with an area about twice the area of ​​the top surface of the light emitting element, and discloses a minute semiconductor light emitting device in which the top surface size of the resin substrate is the same as the top surface size of the semiconductor light emitting device. A metal pattern for mounting the light emitting element and a metal pattern for wire bonding are arranged on the top surface of the resin substrate, and a pair of metal patterns for mounting terminals are arranged on the back surface. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2017-98394 Summary of the Invention [Problem to be solved by the invention]

[0005] The semiconductor light emitting device known as a chip size package, as described in Patent Document 1, is small in size, making it difficult to provide a structure for dissipating heat from the light emitting element. As a result, it is not easy to sufficiently dissipate the heat from the light emitting element, making it difficult to maintain the light emitting characteristics of the light emitting element for a long period of time and possibly deteriorating the components that make up the semiconductor light emitting device.

[0006] An object of the present invention is to provide a structure that allows efficient dissipation of heat generated by a light emitting element through a substrate, even in a minute semiconductor light emitting device. [Means for solving the problem]

[0007] To achieve the above object, the present invention provides a semiconductor light-emitting device comprising: a flat substrate having rectangular upper and lower surfaces; a light-emitting element mounted on the upper surface of the substrate; a rectangular electrode pad disposed between the substrate and the lower surface of the light-emitting element and in contact with the entire lower surface of the light-emitting element; and a mounting electrode disposed on the lower surface of the substrate in an area facing the electrode pad. The substrate is a ceramic substrate. At least one predetermined side of the substrate's lower surface is positioned at a position coincident with or outside a line intersecting the lower surface of the substrate and a plane S that forms a 45-degree angle with respect to the thickness direction of the substrate from the side of the electrode pad that is closest to the predetermined side of the substrate. The mounting electrode is sized so that the side of the mounting electrode closest to the predetermined side of the substrate is positioned outside the side directly below the corresponding side of the electrode pad. The substrate conducts heat conducted from the light-emitting element via the electrode pad to the lower surface of the substrate, spreading it in the direction of the main plane, and the mounting electrode conducts the heat that has spread on the lower surface of the substrate. [Effects of the Invention]

[0008] According to the present invention, it is possible to provide a small semiconductor light emitting device that can efficiently dissipate heat generated by a light emitting element through a substrate. [Brief explanation of the drawings]

[0009] [Figure 1] 1(a) to 1(d) are a top view, a side view, a rear view, and an AA cross-sectional view of a semiconductor light-emitting device 1 according to a first embodiment of the present invention. [Figure 2] (a) and (b) are a top view and a cross-sectional view of the semiconductor light-emitting device from which the light-reflecting resin layer 21 of the semiconductor light-emitting device 1 of embodiment 1 has been removed, and (c) and (d) are a top view and a cross-sectional view of the substrate. [Figure 3] 1 is a cross-sectional view showing a state in which the semiconductor light emitting device 1 of the first embodiment is mounted on a circuit board 30. FIG. [Figure 4] 3A and 3B are diagrams illustrating heat conduction within the substrate 10 of the semiconductor light emitting device 1 of the first embodiment. [Figure 5] 3(a) and 3(b) are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 6] 3(a) and 3(b) are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 7] 2A to 2C are diagrams illustrating the manufacturing process of the semiconductor light emitting device 1 of the first embodiment. [Figure 8] 10(a) and 10(b) are a top view and a DD cross-sectional view of a semiconductor light-emitting device 1 of a second embodiment. [Figure 9] (a) is a top view of the substrate 10 of the semiconductor light-emitting device 1 of Samples 1 to 6 of the embodiment; (b-1) is a bottom view of the substrate 10 of the semiconductor light-emitting device 1 of Sample 1 of the embodiment; (b-2) is a bottom view of the substrate 10 of the semiconductor light-emitting device 1 of Sample 2 of the embodiment; (b-3) is a bottom view of the substrate 10 of the semiconductor light-emitting device 1 of Samples 3 to 6 of the embodiment; (c-1) and (c-2) are top and bottom views of the substrate of the semiconductor light-emitting device of Sample 7 of Comparative Example 1; and (d-1) and (d-2) are top and bottom views of the substrate of the semiconductor light-emitting device of Sample 7 of Comparative Example 2. [Figure 10] 1 is a graph showing thermal resistance values ​​for Samples 1 to 6 of the embodiment and Samples 7 and 8 of Comparative Examples 1 and 2, and a diagram showing the size of the substrates and heat dissipation images of Samples 1 to 7 in a table format. DETAILED DESCRIPTION OF THE INVENTION

[0010] An embodiment of the present invention will be described below.

[0011] <<Embodiment 1>> The semiconductor light emitting device 1 of the first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1(a) to Fig. 1(d) are a top view, a side view, a back view, and a cross-sectional view of the semiconductor light emitting device 1. Fig. 2(a) and Fig. 2(b) are a top view and a cross-sectional view of the semiconductor light emitting device from which the light-reflective resin layer 21 has been removed, and Fig. 2(c) and Fig. 2(d) are a top view and a cross-sectional view of the substrate. Fig. 3 is a cross-sectional view showing the semiconductor light emitting device 1 mounted on a circuit board.

[0012] The semiconductor light emitting device 1 is configured to include a substrate 10, a light emitting element 13 mounted on the upper surface of the substrate 10, and an electrode pad 11.

[0013] The substrate 10 is flat and has rectangular upper and lower surfaces. The substrate 10 is preferably made of a material with isotropic thermal conductivity, and in this embodiment, a ceramic substrate made of AlN is used. The material constituting the substrate 10 is not limited to AlN; for example, SiN or Al2O3 can also be used. The thermal conductivity of the substrate 10 is preferably 100 W / (m·K) or higher.

[0014] The electrode pad 11 has a light-emitting element mounting region R1 that is rectangular in top view, and is disposed between the substrate 10 and the lower surface of the light-emitting element 13. The electrode pad 11 is sized to contact the entire lower surface of the light-emitting element 13. The electrode pad 11 contains copper (Cu).

[0015] The shape of the light-emitting element mounting region R1 in top view is not limited to a rectangle, but may be any shape similar to the outer shape of the light-emitting element in top view.

[0016] A first mounting electrode 16 is arranged on the lower surface of the substrate 10 in an area facing the electrode pad 11. The electrode pad 11 and the first mounting electrode 16 are electrically connected by a first electrode via 17 formed by vertically penetrating a part of the substrate 10.

[0017] The position of the edge (side of the lower surface) of the substrate 10 and the position of the edge (side of the lower surface) of the electrode pad 11 are designed to satisfy the following relationship.

[0018] The side of the electrode pad 11 that corresponds to at least one predetermined side (e.g., the substrate lower side 10a) of the four sides of the lower surface of the substrate 10, i.e., the side of the electrode pad 11 that is parallel or nearly parallel to the substrate lower side 10a and closest to it, and that is in contact with the upper surface of the substrate 10, is called the electrode pad lower side 11a. When a plane Sa is set that forms an angle of 45 degrees outward from the electrode pad lower side 11a relative to the thickness direction of the substrate 10, the substrate lower side 10a of the substrate 10 is designed to be located on or outside that plane (FIGS. 1(d) and 2(b)). That is, the substrate lower side 10a of the substrate 10 is located at a position that coincides with or outside the line La where the plane Sa intersects with the lower surface of the substrate 10.

[0019] In other words, the electrode pad lower side 11a on which the light emitting element 13 is mounted is located in an area inside a plane Sa that is diagonally inward at 45° from the edge of the lower surface of the substrate 10 (substrate lower side 10a) in the thickness direction.

[0020] Heat generated by the light-emitting element 13 is conducted from the electrode pad 11 to the substrate 10. Because the ceramic substrate 10 has isotropic thermal conductivity, the heat spreads in the in-plane direction while being conducted in the thickness direction, as shown in FIG. 4. Specifically, FIG. 4 schematically shows how heat generated at a certain point on the upper surface of the substrate 10 is dissipated to the lower surface of the substrate 10. t1 to t4 indicate the passage of time, and as time passes, the heat is conducted while spreading isotropically toward the lower surface of the substrate 10 and is dissipated from the lower surface of the substrate. Therefore, because the electrode pad lower edge 11a is formed in an area inside the plane Sa that is diagonally inward at 45° from the edge of the lower surface of the substrate 10 (substrate lower edge 10a) in the thickness direction, the heat can be conducted to the lower surface of the ceramic substrate 10 without being hindered by the side surfaces of the ceramic substrate 10.

[0021] Therefore, the thermal resistance of the substrate 10 can be reduced, and heat can be conducted with high efficiency.

[0022] Furthermore, the size of the first mounting electrode 16 is designed so that, of the four sides of the first mounting electrode 16, the mounting electrode side 16a corresponding to the bottom side 10a of the substrate (i.e., the side that is parallel or nearly parallel to the bottom side 10a of the substrate and closest to it) is positioned outside the area directly below the corresponding side of the electrode pad 11.

[0023] 3, when the first mounting electrode 16 of the semiconductor light emitting device 1 is mounted on the wiring 31 of the circuit board 30 with solder 35 or the like, the first mounting electrode 16 can efficiently conduct and dissipate heat that has been conducted to the underside of the ceramic substrate 10 to the circuit board 30. A substrate with high thermal conductivity, such as a metal substrate, can be used as the circuit board 30. The circuit board 30 can be cooled by a cooling element.

[0024] Furthermore, it is preferable that mounting electrode side 16a be located within a predetermined distance D from substrate bottom side 10a. Distance D is preferably as small as possible, taking into consideration the manufacturing process. For example, distance D can be set to a distance that prevents first mounting electrode 16 from coming into contact with a dicing blade when substrate 10 is diced.

[0025] In the semiconductor light-emitting device 1 of this embodiment, not only the substrate lower edge 10a but also the counter substrate lower edge 10b opposite to the substrate lower edge 10a have the same relationship with the corresponding counter electrode pad lower edge 11b as described above. That is, if a plane Sb is formed from the counter electrode pad lower edge 11b at an angle of 45 degrees relative to the thickness direction of the substrate 10, the counter substrate lower edge 10b is located outside of the plane Sb. In other words, the counter substrate lower edge 10b is located outside of the line Lb where the plane Sb and the substrate 10 intersect.

[0026] Similarly, it is preferable that the relationship between each of the other sides (sides 10c, 10d) of the substrate 10 that are perpendicular to the bottom side 10a of the substrate and each of the other sides (sides 11c, 11d) of the corresponding electrode pad 11 satisfies the above-mentioned relationship, as this can increase thermal conductivity.

[0027] The structure of the semiconductor light emitting device 1 will be further described.

[0028] A phosphor layer 15 is disposed on the upper surface of the light emitting element 13. The phosphor layer 15 is excited by a part of the light emitted by the light emitting element 13 and emits fluorescence. In this way, the phosphor layer 15 converts the wavelength of the light emitted by the light emitting element 13.

[0029] The light-emitting element 13 and the phosphor layer 15 are surrounded by a light-reflective resin layer 21. The side surfaces of the light-reflective resin layer 21 are located on the same plane as the side surfaces of the substrate 10. The light-reflective resin layer 21 is made of a material in which light-reflective particles (average particle diameter 200 to 300 nm) such as titanium oxide are dispersed in a resin (e.g., silicone resin). This allows the light-reflective resin layer 21 to reflect light emitted from the side surfaces of the light-emitting element 13 and the phosphor layer 15 and direct it upward.

[0030] The electrode pads 11 on the upper surface of the substrate 10 are arranged at positions offset from the center of the upper surface of the substrate 10. In the areas of the upper surface of the substrate 10 where no electrode pads 11 are arranged, metal pads 18 for wire bonding and electrode pads 23 for protective elements are arranged. The metal pads 18 for wire bonding are connected to the upper surface electrodes of the light-emitting elements 13 by bonding wires 22. A light-reflective resin layer 21 covers the upper surfaces of the metal pads 18, and the bonding wires 22 are embedded in the light-reflective resin layer 21. The electrode pads 23 for protective elements are connected to the electrode pads 11. A protective element 24 is mounted on the electrode pads 23 for protective elements.

[0031] A bonding member 12 such as solder (AuSn) is disposed between the electrode pad 11 and the lower surface of the light emitting element 13 to electrically bond the electrode pad 11 and the lower electrode of the light emitting element 13 together.

[0032] An adhesive member 14 is disposed between the light emitting element 13 and the phosphor layer 15 to bond them together.

[0033] In addition to the first mounting electrode 16, two second mounting electrodes 19 are arranged on the lower surface of the substrate 10. The second mounting electrodes 19 are connected to a metal pad 18 for wire bonding and an electrode pad 23 for a protective element by second electrode vias 20, respectively.

[0034] As described above, the semiconductor light emitting device 1 of this embodiment has the above-described structure, which allows the heat generated in the light emitting element 13 and the phosphor layer 15 to be efficiently conducted to the rear surface of the substrate 10. Therefore, the heat can be conducted from the rear surface of the substrate 10 to the circuit board 30 via the first mounting electrode 16, and can be dissipated.

[0035] The electrode pad 11 has the characteristic of being easily peeled off at the interface with the light-reflective resin layer 21. However, the structure of this embodiment 1 does not require the area of ​​the electrode pad 11 to be larger than the underside of the light-emitting element 13, so the heat generated by the light-emitting element 13 can be efficiently conducted to the underside of the substrate 10 and dissipated, while also preventing peeling of the light-reflective resin layer 21.

[0036] <Manufacturing method> An example of a method for manufacturing the semiconductor light emitting device 1 will now be described with reference to FIGS.

[0037] (Substrate preparation process) 5(a), a large substrate is prepared in which multiple connected substrates 10 are connected, each substrate having electrode pads 11, metal pads 18 for wire bonding, and electrode pads 23 for protective elements patterned on its upper surface, and first mounting electrodes 16 and second mounting electrodes 19 patterned on its rear surface. For example, AlN is used as the material for the substrate 10.

[0038] (Element mounting process) Next, to form the joining member 12, a solder paste, for example, a volatile solder paste gold-tin solder (Au-20 wt% Sn), is applied to the electrode pad 11 and the electrode pad 23 for the protective element, respectively, and the light-emitting element 13 and the protective element 24 are placed on the solder paste as shown in Figure 5(b).

[0039] The solder is heated to 300°C in a reflow furnace to melt and solidify, thereby forming the bonding members 12. As a result, the bonding members 12 bond the lower electrodes of the light-emitting element 13 and the protective element 24 to the electrode pads 11 and the protective element electrode pads 23.

[0040] (wire bonding) The upper electrodes of the joined light emitting element 13 and protective element 24 are connected to the metal pads 18 for wire bonding by bonding wires 22 and 25, respectively.

[0041] (Phosphor layer bonding process) A light-transmitting silicone resin is applied as an adhesive member 14 to the upper surface (light-emitting surface) of the light-emitting element 13 .

[0042] A rectangular phosphor plate is placed and pressed to form the phosphor layer 15, conforming to the shape of the upper surface of the light emitting element 13. Thereafter, the adhesive member 14 is temporarily cured and bonded by heating at 150° C. for 10 minutes, for example.

[0043] (Light reflective resin layer formation process) A resin mixture in which titanium oxide particles are dispersed in uncured silicone resin is poured around the light emitting element 13 and the phosphor layer 15 .

[0044] For example, the resin mixture is cured by heating at 180° C. for 30 minutes to form a light-reflective resin layer 21 (FIG. 6(b)).

[0045] (Singulation process) 5(a) and 5(b) and 6(a) and 6(b) are performed on a large substrate in which multiple substrates 10 are connected, and therefore the state in Fig. 6(b) shows multiple connected semiconductor light emitting devices 1. Therefore, a thin dicing blade is used to cut between the semiconductor light emitting devices 1 to separate them into individual pieces (see Fig. 7).

[0046] In this manner, the semiconductor light emitting device 1 of the first embodiment can be manufactured.

[0047] <<Embodiment 2>> A semiconductor light emitting device 101 according to the second embodiment will be described with reference to FIGS. 8(a) and 8(b).

[0048] The semiconductor light emitting device 101 of the second embodiment has the same configuration as the semiconductor light emitting device 1 of the first embodiment, but a recess 41 is provided on the periphery of the upper surface of the substrate 10.

[0049] This recess 41 is formed by cutting out at least a portion of the area sandwiched between a plane Sa that is diagonally outward at 45 degrees from the lower edge 11a of the electrode pad 11 to the thickness direction of the substrate 10 and the upper surface of the substrate 10.

[0050] The recess 41 is preferably a groove provided on the upper surface of the substrate 10, and the longitudinal direction of the groove is preferably parallel to the side surface of the substrate 10. In addition, the side surface of the groove is preferably perpendicular to the upper surface of the substrate 10.

[0051] The groove-like recesses 41 are preferably provided in parallel on each of the four side surfaces of the substrate 10.

[0052] The area sandwiched between the surface Sa and the upper surface of the substrate 10 does not significantly contribute to the heat conducted from the electrode pad 11 to the substrate 10 spreading in the main plane direction and conducting toward the lower surface, and therefore, even if a recess 41 is cut out and provided, it does not have a significant effect on the heat conduction.

[0053] On the other hand, by providing the recess 41 in the substrate 10, the contact area between the light-reflecting resin layer 21 and the substrate 10 increases, and the adhesion between the light-reflecting resin layer 21 and the substrate 10 improves.

[0054] 7 during the manufacturing process of semiconductor light emitting devices 101, cutting of ceramic substrate 10 becomes easier by dicing along the grooves. Ceramic substrate 10 is highly hard and therefore prone to chipping (chipping or cracking at the edges) during the cutting process, but by providing groove-like recesses 41 in advance, the portions of substrate 10 that are cut by dicing become thinner, preventing chipping. [Example]

[0055] As an example, the semiconductor light emitting device 1 of the first embodiment was manufactured. Samples 1 to 6 are samples of the semiconductor light emitting device 1 of the example, and samples 7 and 8 are samples of the comparative examples 1 and 2.

[0056] As shown in FIG. 9, in all of Samples 1 to 6, the short side of the substrate 10 is 2.13 mm and the long side is 3.01 mm. The size of the electrode pad 11 on the upper surface of Samples 1 to 6 is also the same. Samples 1 to 6 use light emitting elements 13 of the same size. The size of the first mounting electrode 16 on the lower surface of the substrate 10 increases in the order of Sample 1, Sample 2, and Sample 3, and the area of ​​each is 1.24 mm 2 , 2.30mm 2 , 2.30mm 2 is.

[0057] Samples 4 to 6 have the same size of first mounting electrode 16 on the underside of substrate 10 as sample 3. Samples 4, 5, and 6 are designed with substrate 10 that is thicker in this order, 0.281 mm, 0.381 mm, and 0.481 mm, respectively.

[0058] Sample 7 of Comparative Example 1 and Sample 8 of Comparative Example 2 have substrates 10 that are smaller in size than Samples 1 to 6. The size of substrate 10 of Sample 7 is 1.33 mm for the short side and 2.21 mm for the long side. The size of substrate 10 of Sample 8 is 1.5 mm for the short side and 1.9 mm for the long side.

[0059] For Samples 1 to 6 of the example and Samples 7 and 8 of Comparative Examples 1 and 2, the thermal resistance Rth was measured from the junction between the upper surface of the electrode pad 11 and the light emitting element 13 to the lower surface of the first mounting electrode on the lower surface of the substrate 10. Simcenter T3STER and TERALED were used for the measurements.

[0060] The measured results of the thermal resistance Rth are shown in the graph of FIG.

[0061] It was confirmed that Samples 1 to 6 of the example had smaller thermal resistance Rth than Samples 7 and 8 of Comparative Examples 1 and 2.

[0062] This is thought to be because the spread of heat within the main plane of the substrate was hindered by the side surfaces of the substrate in Samples 7 and 8 of Comparative Examples 1 and 2. In contrast, in Samples 1 to 6 of this example, when a surface Sa is set that forms an angle of 45 degrees outward from the side 11a of the lower surface of the electrode pad 11 with respect to the thickness direction of the substrate 10, the side 10a of the substrate 10 is designed to be located on or outside that surface (see FIGS. 1(d) and 2(b)), so that heat can reach the lower surface of the substrate 10 while spreading within the main plane of the substrate 10.

[0063] Furthermore, as in Samples 1 to 3, the size of first mounting electrode 16 is increased, thereby reducing thermal resistance Rth.

[0064] Furthermore, as in samples 3 to 6, even if the thickness of the substrate 10 is changed, the thermal resistance Rth does not change.

[0065] It was confirmed that Samples 1 to 3 of the example were able to efficiently conduct heat from the light emitting element 13 to the first mounting electrode 16 on the lower surface of the substrate 10 with low thermal resistance, and thus were able to dissipate the heat. [Explanation of symbols]

[0066] 1. Semiconductor light-emitting device 10 Substrate 10a Bottom edge of board 10b Lower edge of opposing substrate 10c side 11 Electrode pads 11a Bottom edge of electrode pad 11b Lower edge of counter electrode pad Around 11c 12 Joint materials 13 Light-emitting element 14 Adhesive material 15 Phosphor layer 16 First mounting electrode 16a Mounting electrode side 18 Metal pads for wire bonding 21 Light reflective resin layer 22 Bonding wire 23 Electrode pad for protective element 24 Protection element 30 Circuit Board 31 Wiring 41 Recess 101 Semiconductor light-emitting device

Claims

1. a flat substrate having rectangular upper and lower surfaces; a light-emitting element mounted on the upper surface of the substrate; a rectangular electrode pad disposed between the substrate and a lower surface of the light-emitting element and in contact with the entire lower surface of the light-emitting element; a mounting electrode disposed on the lower surface of the substrate in an area facing the electrode pad; the substrate is a ceramic substrate, at least one predetermined side of the lower surface of the substrate is located at a position that coincides with or is outside a line that intersects the lower surface of the substrate and a plane S that is obliquely 45 degrees outward from the side of the electrode pad that is closest to the predetermined side of the substrate with respect to the thickness direction of the substrate, the size of the mounting electrode is set so that the side of the mounting electrode closest to the predetermined side of the substrate is positioned outside the side immediately below the corresponding side of the electrode pad; The substrate conducts heat conducted from the light emitting element via the electrode pad while spreading the heat in a main plane direction to the lower surface of the substrate, and the mounting electrode conducts the heat that has spread on the lower surface of the substrate. A semiconductor light emitting device characterized by:

2. 2. The semiconductor light emitting device according to claim 1, wherein the substrate has isotropic thermal conductivity.

3. 2. The semiconductor light-emitting device according to claim 1, wherein the side of the mounting electrode closest to the predetermined side of the substrate is located within a predetermined distance from the predetermined side of the lower surface of the substrate.

4. 2. The semiconductor light emitting device according to claim 1, wherein a phosphor layer is disposed on an upper surface of said light emitting element.

5. 2. The semiconductor light emitting device according to claim 1, further comprising a light reflective resin layer covering the periphery of the light emitting element, A semiconductor light emitting device, wherein the light reflective resin layer has a side surface that is flush with a side surface of the substrate.

6. 2. The semiconductor light emitting device according to claim 1, wherein the substrate is made of AlN, SiN, and Al. ２ O ３ A semiconductor light emitting device comprising any one of the following:

7. 2. The semiconductor light emitting device according to claim 1, wherein a metal pad for wire bonding is further disposed on the upper surface of the substrate; the electrode pads are arranged at positions offset from the center of the upper surface of the substrate, and the metal pads for wire bonding are arranged in regions of the upper surface of the substrate where the electrode pads are not arranged; The semiconductor light-emitting device is characterized in that the metal pad for wire bonding is connected to the upper electrode of the light-emitting element by a bonding wire.

8. 2. The semiconductor light-emitting device according to claim 1, wherein the upper surface of the substrate is provided with a recess that cuts out at least a portion of the area sandwiched between the surface S and the upper surface of the substrate.

9. 9. The semiconductor light emitting device according to claim 8, wherein the recess is a groove provided in the upper surface of the substrate, and the longitudinal direction of the groove is parallel to the side surface of the substrate.

10. 10. The semiconductor light emitting device according to claim 9, wherein the side surfaces of the grooves are perpendicular to the upper surface of the substrate.

11. 10. The semiconductor light emitting device according to claim 9, wherein the grooves are provided in parallel on four side surfaces of the substrate.

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