Optoelectronic semiconductor component

Abstract

An improved optoelectronic semiconductor component, for example, a highly efficient semiconductor component, is specified.SOLUTION: In at least one embodiment, an optoelectronic semiconductor component (100) comprises a semiconductor layer sequence (1) having an active layer (10) for generating primary radiation, at least one injection structure (2) on a first side (11) of the semiconductor layer sequence for injection of charge carriers into the semiconductor layer sequence, and at least one mirror structure (3) next to the injection structure on the first side of the semiconductor layer sequence for reflection of radiation generated in the semiconductor component. The mirror structure has a higher reflectivity for the radiation generated in the semiconductor component than the injection structure.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] An optoelectronic semiconductor component is disclosed. Summary of the Invention [Problem to be solved by the invention]

[0002] The problem to be solved is to disclose improved optoelectronic semiconductor components, for example semiconductor components with high efficiency. [Means for solving the problem]

[0003] This problem is solved, inter alia, by the subject matter of independent claim 1. Advantageous embodiments and developments are the subject matter of the dependent claims and will become apparent further from the following description and drawings.

[0004] According to at least one embodiment, an optoelectronic semiconductor component includes a semiconductor layer stack having an active layer, which can be configured to generate electromagnetic primary radiation, for example, generated by recombination of electrons and holes in the active layer.

[0005] The semiconductor layer stack is based on, for example, a III-V compound semiconductor material. n In1― n - m Ga m nitride compound semiconductor materials such as N, or Al n In1― n - m Ga m Phosphide compound semiconductor materials such as P, or Al n In1― n - m Ga m As or Al n In1― n - m Ga mThe semiconductor layer sequence may comprise arsenide compound semiconductor materials such as AsP, where 0≦n≦1, 0≦m≦1, and m+n≦1, respectively. In that case, the semiconductor layer sequence may comprise dopants and additional components. For simplicity, however, only the essential components of the crystal lattice of the semiconductor layer sequence are shown, i.e., Al, As, Ga, In, N, or P, even if they can be partially replaced and / or supplemented by small amounts of other substances. Preferably, the semiconductor layer sequence is based on AlInGaN.

[0006] The active layer of the semiconductor layer sequence comprises, in particular, at least one pn junction and / or at least one quantum well structure in the form of a single quantum well, abbreviated SQW, or in the form of a multiple quantum well structure, abbreviated MQW. Preferably, the semiconductor component comprises one, in particular exactly one continuous, in particular continuous, active layer. Alternatively, the active layer can be subdivided.

[0007] The active layer may, for example, when in operation as specified, produce electromagnetic radiation in the blue, green or red region of the spectrum, or in the UV region, or in the IR region.

[0008] The semiconductor component can be a semiconductor chip. Here and below, a semiconductor chip is understood to mean an element that can be handled and electrically contacted separately. The semiconductor chip is produced, for example, by singulating a wafer assembly. The side surface of the semiconductor chip may bear traces from the wafer assembly singulation process. The semiconductor chip, for example, comprises exactly one initially continuous region of a semiconductor layer stack grown on the wafer assembly. The semiconductor layer stack of the semiconductor chip is preferably formed continuously. The lateral extent of the semiconductor chip, measured parallel to the main extension plane of the active layer, is, for example, at most 1%, at most 5%, or at most 10% greater than the lateral extent of the active layer. The semiconductor chip, for example, further comprises a growth substrate on which the entire semiconductor layer stack has been grown.

[0009] Here and below, any arbitrary lateral extension or extent is understood as lateral extent, the lateral direction being a direction parallel to the main plane of extension of the active layer.

[0010] The semiconductor chip can be a so-called volume emitter, in particular a flip chip. In this case, the semiconductor chip also comprises, for example, a growth substrate, which is formed, for example, from sapphire. Alternatively, the semiconductor chip can be a surface emitter, in particular a so-called thin film chip. In this case, the growth substrate is, for example, peeled off.

[0011] According to at least one embodiment, the semiconductor component has at least one injection structure. The injection structure is, for example, disposed on a first side of the semiconductor stack. The injection structure can be provided or configured to inject charge carriers into the semiconductor stack. During normal operation of the semiconductor component, charge carriers, for example, holes or electrons, are injected into the semiconductor stack via the injection structure. In particular, the charge carriers are injected into a semiconductor layer disposed between the active layer and the first side via the injection structure.

[0012] The injection structure is a conductive structure. For injection, the injection structure on the first side can be in direct contact with the semiconductor layer stack. The first side of the semiconductor layer stack is, for example, the boundary or terminal side of the semiconductor layer stack facing away from the active layer. The first side can be formed by a layer of n-type conductivity or p-type conductivity of the semiconductor layer stack.

[0013] According to at least one embodiment, the semiconductor component has at least one mirror structure. For example, the mirror structure is arranged on a first side of the semiconductor layer sequence. The mirror structure can be arranged next to the injection structure. For example, the mirror structure is configured or provided for reflecting radiation, such as primary radiation, generated in the semiconductor component.

[0014] The term "next to" means, for example, next to the injection structure in the lateral direction. The mirror structure can be laterally adjacent to the injection structure. The mirror structure can be in direct contact with the semiconductor layer sequence on the first side.

[0015] According to at least one embodiment, the mirror structure has a higher reflectivity than the injection structure for radiation generated in the semiconductor component, for example primary radiation. This applies in particular to radiation of the semiconductor component that leaves the semiconductor layer sequence via the first side and enters the mirror structure or injection structure. In other words, the injection structure and the reflector structure are configured such that radiation leaving the semiconductor layer sequence via the first side, in particular primary radiation, is more reflective when it subsequently enters the mirror structure than when it subsequently enters the injection structure.

[0016] The reflectivity of the mirror structure is, for example, at least 1.05 times, or at least 1.1 times, or at least 1.5 times greater than the reflectivity of the injection structure, e.g., at least 90%, or at least 95%, or at least 99%.

[0017] Quantities such as reflectance, transmittance, absorption, refractive index, etc. are referred to here and below as relating to wavelengths at which, for example, radiation generated in the semiconductor component, in particular primary radiation, has an intensity maximum.

[0018] In at least one embodiment, an optoelectronic semiconductor component comprises a semiconductor layer stack having an active layer for generating primary radiation, at least one injection structure on a first side of the semiconductor layer stack for injecting charge carriers into the semiconductor layer stack, and at least one mirror structure on the first side of the semiconductor layer stack adjacent to the injection structure for reflecting radiation generated in the semiconductor component, the mirror structure having a higher reflectivity for radiation generated in the semiconductor component than the injection structure.

[0019] The invention is based, inter alia, on the recognition that structures with good injection properties often have poor reflection properties, and in order to nevertheless achieve sufficient reflection in semiconductor components, the invention uses, in addition to injection structures that are designed and specifically optimized for injection, mirror structures that are specially designed and arranged for reflecting the generated radiation, which allows for an overall improvement in the reflection in the direction of the main radiation side facing these structures.

[0020] According to at least one embodiment, an injection layer for injecting charge carriers into the semiconductor layer sequence is arranged on the first side in direct contact with the semiconductor layer sequence, the injection layer being, by way of example, configured to form an ohmic contact with the semiconductor layer adjacent to the first side.

[0021] The injection layer may be part of the injection structure and / or the mirror structure. For example, a part of the injection layer is part of the injection structure and a part of the injection layer arranged laterally adjacent thereto is part of the mirror structure. The injection layer may, for example, be formed in one piece, i.e., not consist of multiple partial layers.

[0022] According to at least one embodiment, the injection layer is largely transparent to radiation generated by the semiconductor component, for example primary radiation. For example, the transmission for radiation entering the injection layer from the semiconductor layer sequence via the first side and passing through the injection layer is at least 50%, or at least 60%, or at least 75%, or at least 85%. The injection layer can be disposed over the entire first side of the semiconductor layer sequence.

[0023] According to at least one embodiment, the injection layer extends continuously across both the injection structure area and the mirror structure area, meaning that there is no break in the injection layer between the injection structure and the mirror structure. Illustratively, the injection layer is continuous or contiguous across its entire lateral extent.

[0024] According to at least one embodiment, the injection layer comprises or consists of a transparent conductive oxide, TCO for short, which may be indium tin oxide, ITO for short, fluorine-doped tin oxide, FTO for short, aluminum-doped tin oxide, SrNbO3, or ZnMgBeO.

[0025] The injection layer may, by way of example, have a thickness, such as an intermediate thickness or a minimum thickness or a maximum thickness, of at most 10 nm or at most 5 nm and / or at least 0.5 nm or at least 1 nm.

[0026] According to at least one embodiment, the mirror structure comprises a Bragg-Spiegel mirror. The mirror structure can have multiple layers with different refractive indices, for example, alternating layers of higher and lower refractive indices. In one example, the mirror structure has at least four layers or at least ten layers.

[0027] The injection layer may be disposed between the Bragg mirror and the first side of the semiconductor stack. For example, the injection layer may be in direct contact with the Bragg mirror. The layer of the Bragg mirror adjacent to the injection layer may have a different refractive index than the injection layer. For example, the layer of the Bragg mirror adjacent to the injection layer may have a lower refractive index than the injection layer. Alternatively, the layer of the Bragg mirror adjacent to the injection layer may have a higher refractive index than the injection layer. This may be advantageous for good adhesion between the Bragg mirror and the injection layer.

[0028] The layer of the Bragg mirror with the lower refractive index can include or consist of SiO2, MgF2, AlF3, and the layer of the Bragg mirror with the higher refractive index can include or consist of YDH, HfO2.

[0029] According to at least one embodiment, the mirror structure comprises a dielectric mirror. The dielectric mirror may be a Bragg mirror. The dielectric mirror comprises one or more dielectric layers. The injection layer may be in direct contact with the dielectric layer of the dielectric mirror.

[0030] According to at least one embodiment, the injection structure includes a metal. An injection layer can be disposed between the first side of the semiconductor stack and the metal of the injection structure. In one example, the injection layer is in direct contact with the metal of the injection structure. The metal can be Al, Cr, Ag, Au, Pt, or another metal.

[0031] Al has a high reflectivity of about 90% for UV radiation. However, the injection properties of Al in semiconductor materials such as p-type AlInGaN are poor. An injection layer, for example made of ITO, between Al and the semiconductor material improves the injection properties but reduces the reflectivity because ITO has a relatively high absorption, especially for UV radiation, while radiation is partially converted to surface plasmons at the interface between Al and ITO. According to the present invention, the reflectivity can be increased again by using a special mirror structure next to the injection structure.

[0032] According to at least one embodiment, the injection structure includes a first metal and a second metal. The second metal can be disposed, for example, between the first metal and the first side of the semiconductor stack. The second metal can be disposed in a region of the injection structure between the injection layer and the first metal. For example, the second metal is in direct contact with the injection layer and / or the first metal.

[0033] According to at least one embodiment, the first metal has a higher reflectivity than the second metal for radiation generated in the semiconductor component, in particular for primary radiation, for example at least 5%, or at least 10%, or at least 50% higher.

[0034] According to at least one embodiment, the second metal is less likely to form a metal oxide than the first metal when in contact with a transparent conductive oxide, particularly the transparent conductive oxide of the injection layer. In particular, the second metal does not undergo as strong a chemical reaction with the injection layer as the first metal. The first metal can be, for example, aluminum, indium, or palladium. For example, if the first metal is aluminum, the second metal can be chromium, indium, or palladium.

[0035] It may be advantageous to avoid the generation of metal oxides, as they may be an additional source of radiation absorption.

[0036] According to at least one embodiment, the semiconductor component has multiple injection structures and / or mirror structures on a first side. All features of one injection structure disclosed above and below are also disclosed for all other injection structures. Similarly, all features of one mirror structure disclosed above and below are also disclosed for all other mirror structures.

[0037] For example, a first side of the semiconductor stack may have a continuous mirror structure penetrated by a number of injection structures that penetrate the mirror structure in, for example, a regular pattern, for example, a rectangular or polygonal pattern. For example, on a side of the mirror structure facing the semiconductor stack, the injection structures may be electrically conductively connected to one another, for example, via a continuous metal layer.

[0038] Alternatively, the injection structure can be continuous and penetrated by multiple mirror structures.

[0039] According to at least one embodiment, the semiconductor layer sequence has a recess in the region of the injection structure, into which the injection structure protrudes. The recess extends in particular in the direction of the active layer. The width of the recess, measured laterally, can decrease in the direction of the active layer. In cross section, the recess is formed, for example, in a V-shape. The injection structure is in electrical contact with the semiconductor layer sequence, for example, along the entire recess, especially in the bottom region of the recess.

[0040] The recess and the injection structure recessed within the recess can increase the injection area into which charge carriers are injected.

[0041] In the region of the mirror structure, for example, no recess is provided. In the region of the mirror structure, the thickness, for example, the intermediate or minimum thickness, of the semiconductor layer stack can be greater than the (e.g., intermediate or minimum) thickness in the injection region, for example, by at least 10% or at least 50%. In the region of the mirror structure, the intermediate or minimum distance between the first side and the active layer can be, for example, at least 300 nm or at least 400 nm and / or at most 1000 nm or at most 600 nm. In the region of the injection structure, the intermediate or minimum distance can be at most 100 nm or at most 50 nm and / or at least 20 nm.

[0042] According to at least one embodiment, the recesses do not extend completely through the active layer, which may be formed in one continuous piece, for example.

[0043] According to at least one embodiment, the semiconductor layer sequence is based on AlInGaN. The Al content of the semiconductor layer sequence or at least the first side is, for example, at least 40% or at least 45%. This means that Al n In1― n - m Ga m N, where n≧0.4 or n≧0.45. The In content is, for example, at most 1% or at most 0.1%.

[0044] According to at least one embodiment, the primary radiation and / or the radiation reflected by the mirror structure is radiation in the ultraviolet range. By way of example, the primary radiation has an intensity maximum in the ultraviolet range, for example in the range from 100 nm to 280 nm.

[0045] According to at least one embodiment, the semiconductor layer sequence has p-type conductivity on the first side. In particular, the layers forming the first side of the semiconductor layer sequence have p-type conductivity. For example, the semiconductor layer sequence is doped with Mg on the first side. During normal operation of the semiconductor component, for example, holes are injected into the semiconductor layer sequence via the injection structure. The entire region of the semiconductor layer sequence between the active layer and the first side can have p-type conductivity.

[0046] According to at least one embodiment, the second side of the semiconductor stack opposite the first side forms the main radiation side of the semiconductor stack. For example, the second side is the side from which at least 75% or at least 90% of the radiation generated in the semiconductor stack is ultimately extracted from the semiconductor stack. This means that this radiation then leaves the semiconductor component without passing through the semiconductor stack again. In contrast, for example, at least 75%, at least 90%, or at least 95% of the radiation extracted from the semiconductor stack via the first side can be reflected back into the semiconductor stack.

[0047] The second side can be structured to increase the extraction probability. For example, a structure is etched on the second side, or the semiconductor layer sequence is grown on a structured substrate, such as a PSS (patterned sapphire substrate). This can in particular be a nano-PSS, i.e., a substrate with structure sizes in the nanometer range up to several tens of nanometers. In this case, the second side is the side adjacent to the substrate and is shaped to match the structure of the substrate.

[0048] The optoelectronic semiconductor components described herein can be used by medical devices, cleaning services, facility management, water supply industries, grocery delivery industries, etc. For example, the semiconductor components can be used for sterilizing items by UV irradiation. The semiconductor components can be used in sterilization equipment. The semiconductor components can be used to achieve, for example, more reliable sterilization or reduced time to sterilize target materials.

[0049] The optoelectronic semiconductor component described herein will be explained in detail below on the basis of exemplary embodiments with reference to the drawings, in which the same reference signs indicate identical, similar or functionally identical elements in the individual figures. However, in this case, they are not drawn to scale, rather individual elements, in particular layer thicknesses, may be exaggerated for better explanation and / or understanding. Elements in the various figures will not be described repeatedly in the following figures, as long as their functions are consistent. For reasons of clarity, elements may not be given corresponding reference signs in all figures. [Brief explanation of the drawings]

[0050] [Figure 1] 1 is a cross-sectional view of an exemplary embodiment of an optoelectronic semiconductor component; [Figure 2] 1 is a cross-sectional view of an exemplary embodiment of an optoelectronic semiconductor component; [Figure 3] 3 is another cross-sectional view of the semiconductor component of FIG. 2. [Figure 4] FIG. 1 is a diagram of measured transmittance of an ITO layer. [Figure 5] 1 is a cross-sectional view of another exemplary embodiment of an optoelectronic semiconductor component. [Figure 6] 1 is a cross-sectional view of another exemplary embodiment of an optoelectronic semiconductor component. DETAILED DESCRIPTION OF THE INVENTION

[0051] 1 shows a cross-sectional view of a first exemplary embodiment of an optoelectronic semiconductor component 100, in particular an optoelectronic semiconductor chip. The semiconductor component 100 comprises a semiconductor layer sequence 1 having a p-type conductivity layer 12, an n-type conductivity layer 13, and an active layer 10 between the p-type conductivity layer 12 and the n-type conductivity layer 13. The semiconductor layer sequence 1 is defined by two opposing sides 11, 14. The first side 11 is formed by the p-type conductivity layer 12, and the second side 14 is formed by the n-type conductivity layer 13. By way of example, the semiconductor layer sequence 1 is based on AlInGaN. During specified operation, the active layer 10 emits primary radiation, by way of example, with an intensity maximum between 100 nm and 280 nm, by way of example, in the ultraviolet range.

[0052] The second side 14 is the main emission side via which a large portion of the radiation, for example at least 75%, that is extracted from the semiconductor layer stack 1 during normal operation of the semiconductor component 100 is ultimately extracted without being subsequently reflected back into the semiconductor layer stack 1. In particular, the radiation that is extracted via the second side 14 is then extracted from the semiconductor component 100.

[0053] In contrast, a large proportion of the radiation extracted from the semiconductor layer sequence 1 via the first side 11, for example at least 75% or at least 90%, is reflected back into the semiconductor layer sequence 1. The structures used for this purpose will be explained below.

[0054] The n-type conductive layer 13 is electrically contacted by a contact structure 6 that extends across the entire thickness of the semiconductor layer sequence 1 from the side facing the second side 14 of the semiconductor layer sequence 100 to the second layer 14. The contact structure 6 can be formed as an interconnect through the semiconductor layer sequence 1, which interconnect can be completely surrounded laterally by the semiconductor layer sequence 1 or can be arranged laterally adjacent to the semiconductor layer sequence 1. The contact structure 6 is electrically insulated from the active layer 10 and the p-type conductive layer 12 by an insulating layer 5.

[0055] The p-type conductive layer 12 is electrically contacted by means of an injection structure 2 arranged on the first side 11. The injection structure 2 is conductively connected to the p-type conductive layer 12. In the region of the injection structure 2, a depression or recess is made in the semiconductor layer sequence 1, which depression has a V-shape in the cross section shown. The injection structure 2 contains a first metal 21, such as aluminum by way of example.

[0056] An injection layer 4 made of, for example, a TCO such as ITO is provided on the first side 11 of the semiconductor stack 1 and is in direct contact with the p-type conductive layer 12. The injection layer 4 extends continuously across the injection structures 2 and, for example, across the entire first side 11, even in the regions between the injection structures 2. The injection layer 4 has, for example, a thickness of 2 nm.

[0057] A mirror structure 3 is arranged on the first side 11, next to or laterally adjacent to the injection structure 2. The mirror structure 3 includes a dielectric mirror 30 in the form of a Bragg mirror having a number of dielectric layers 31, 32 with different refractive indices. The dielectric mirror 30 is in direct contact with the injection layer 4. In this case, the layer of the dielectric mirror 30 in contact with the injection layer 4 is, by way of example, a layer with a low refractive index, such as, for example, a MgF2 layer. The subsequent layer with a higher refractive index is, for example, a HfO2 layer.

[0058] Both the mirror structure 3 and the injection structure 2 comprise a portion of the injection layer 4. By way of example, by using a Bragg mirror 30 in the region of the mirror structure 3, a reflectivity of at least 90% is achieved for the radiation generated in the semiconductor layer sequence 1, in particular for the primary radiation.

[0059] The region of the injection structure 2 has a lower reflectivity and is therefore set to inject charge carriers efficiently, but due to the continuous formation of the injection layer 4, a portion of the charge carriers is also injected in the region of the mirror structure 3.

[0060] FIG. 2 shows a cross-sectional view of a second exemplary embodiment of a semiconductor component 100. Unlike the first exemplary embodiment, the injection structure 2 here includes, in addition to the first metal 21, a second metal 22 arranged between the first metal 21 and the injection layer 4. The second metal is in direct contact with both the first metal 21 and the injection layer 4, for example. In particular, the second metal 22 is arranged in a recessed region of the semiconductor layer sequence 1. For example, the second metal 22 is chromium, palladium, or indium. Chromium, palladium, or indium is less likely to oxidize than aluminum when in contact with the ITO of the injection layer 4, which is why aluminum, i.e., the first metal 21, has a higher reflectivity for the primary beam. Oxidation is caused, in particular, by oxygen from the ITO.

[0061] Figure 3 shows the semiconductor component 100 of Figure 2 in a top view of cross section AA' of Figure 2. Figure 2 is also a top view of cross section BB' of Figure 3.

[0062] As can be seen in Figure 3, the mirror structure 3 is in fact a single mirror structure 3 formed in succession and penetrated by a number of injection structures 2, which are then arranged in a regular pattern, here a rectangular pattern.

[0063] FIG. 4 shows the transmittance (in percent) of an injection layer made of ITO, used in the aforementioned exemplary embodiment, by way of example. The transmittance is shown as a function of the wavelength of the incident radiation. The various curves represent measurements for various injection layer thicknesses. Curve K1 shows the result for a layer with a layer thickness of 200 nm. As can be seen, the transmittance for ultraviolet radiation is very low. In contrast, an ITO layer with a thickness of only 2 nm has a much higher transmittance for ultraviolet radiation (see curve K2). The inventors have determined that even a thin ITO layer with a thickness of only 2 nm has sufficient electrical conductivity, so that this layer can be used for charge carrier injection in the aforementioned exemplary embodiment. The relatively high transmittance of such a thin ITO layer allows for efficient reflection of radiation exiting the semiconductor layer sequence 1 via the first side.

[0064] The exemplary embodiment of Fig. 5 differs from the exemplary embodiment of Fig. 2 in that the second side 14 is structured, for example by an etching process, to increase the probability of removal. For the etching process, KOH can be used as an etchant. The etching process is carried out, for example, after stripping off the growth substrate.

[0065] 6, the semiconductor layer sequence 1 is arranged on a structured substrate 7. The substrate 7 may be a growth substrate of the semiconductor layer sequence 1, for example a so-called PSS or nano-PSS. The second side 14 is shaped to match the structure of the substrate 7, which may also increase the extraction probability.

[0066] This patent application claims priority from German Patent Application No. 102021129107.0, the disclosure of which is incorporated herein by reference.

[0067] The present invention is not limited by the description of the exemplary embodiments, but rather includes any novel feature and any combination of features, and particularly includes any combination of features in the claims, even if that feature or combination is not explicitly recited in the claims or exemplary embodiments. [Explanation of symbols]

[0068] 1. Semiconductor laminate 2 Injection structure 3 Mirror structure 4 injection layer 5. Insulation layer 6 Contact layer 7. Circuit Board 10 Active layer 11 First Side 12 p-type conductive layer 13 n-type conductive layer 14 Second Side 21 The First Metal 22 Second Metal 30 Bragg mirror / dielectric mirror 31 Mirror Layer 32 Mirror Layer 100 Optoelectronic Components K1 curve K2 curve

Claims

1. An optoelectronic semiconductor component (100), comprising: a semiconductor layer sequence (1) having an active layer (10) for generating primary radiation, - at least one injection structure (2) on a first side (11) of said semiconductor layer sequence (1) for injection of charge carriers into said semiconductor layer sequence (1), - at least one mirror structure (3) next to the injection structure (2) on the first side (11) of the semiconductor layer sequence (1) for reflection of radiation generated in the semiconductor component (100), - the mirror structure (3) has a higher reflectivity than the injection structure (2) for the radiation generated in the semiconductor component (100); - the semiconductor laminate (1) is AlInGaN-based, an optoelectronic semiconductor component (100), said primary radiation being in the ultraviolet range and having an intensity maximum between 100 nm and 280 nm;

2. - the semiconductor layer sequence (1) has a recess in the region of the injection structure (2), the injection structure (2) protruding into the recess, The semiconductor component (100) according to claim 1, wherein the semiconductor layer sequence (1) is of p-type conductivity on the first side (11).

3. The semiconductor component (100) according to claim 1 or 2, wherein the Al content of at least the first side (11) of the semiconductor layer sequence (1) is at least 40%.

4. an injection layer (4) for injection of charge carriers into said semiconductor layer sequence (1) is arranged in direct contact with said semiconductor layer sequence (1) on said first side (11), A semiconductor component (100) according to claim 1 or 2, wherein the injection layer (4) is largely transparent to radiation generated in the semiconductor component (100).

5. A semiconductor component (100) according to claim 4, wherein the injection layer (4) extends continuously over both the area of ​​the injection structure (2) and the area of ​​the mirror structure (3).

6. - A semiconductor component (100) according to claim 4, wherein the injection layer (4) comprises a transparent conductive oxide.

7. 5. The semiconductor component (100) according to claim 4, wherein the injection layer (4) has a thickness of at most 5 nm.

8. - A semiconductor component (100) according to claim 1 or 2, wherein the mirror structure (3) comprises a Bragg mirror (30).

9. - A semiconductor component (100) according to claim 1 or 2, wherein the mirror structure (3) comprises a dielectric mirror.

10. - A semiconductor component (100) according to claim 1 or 2, wherein the injection structure (2) comprises a metal.

11. - said injection structure (2) comprises a first metal (21) and a second metal (22) between said first metal (21) and said first side (11) of said semiconductor layer sequence (1); - said first metal (21) has a higher reflectivity than said second metal (22) for the radiation generated in said semiconductor component; The semiconductor component (100) according to claim 1 or 2, wherein the second metal (22) is less likely to form metal oxides than the first metal (21) when in contact with a transparent conductive oxide.

12. A semiconductor component (100) according to claim 1 or 2, comprising a number of injection structures (2) and / or mirror structures (3) on said first side (11).

13. - A semiconductor component (100) according to claim 1 or 2, wherein the semiconductor layer sequence (1) has a recess in the region of the injection structure (2), the injection structure (2) protruding into the recess.

14. - A semiconductor component (100) according to claim 13, wherein the recess does not penetrate through the active layer (10).

15. The semiconductor component (100) according to claim 1 or 2, wherein the semiconductor layer sequence (1) is of p-type conductivity on the first side (11).

16. A semiconductor component (100) according to claim 1 or 2, wherein a second side (14) of the semiconductor layer stack (1) opposite the first side (11) forms the main radiation side of the semiconductor layer stack (1).

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