Piezoelectric laminate and method for manufacturing piezoelectric laminate
Patent Information
- Application Number
- JP2024121390
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-07-26
- Publication Date
- 2026-02-05
AI Technical Summary
Piezoelectric films made of KNN-based ferroelectric materials exhibit low DC stress resistance in high-temperature, high-humidity environments, limiting the operational lifespan of actuators and sensors.
A piezoelectric laminate structure is designed with a piezoelectric film composed of KNN, where the surface region has a higher total atomic concentration of K and Na compared to the bulk region, achieved through a two-stage sputtering process with targets of varying power application.
The laminate provides improved DC stress life under high temperature and high humidity conditions, extending the time to dielectric breakdown to over 1000 hours, enhancing the reliability and versatility of piezoelectric devices.
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Abstract
Citation Information
Patent Citations
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