Substrate processing method and substrate processing system

Abstract

To provide a technique capable of reducing variations in process performance.SOLUTION: According to an aspect of the present disclosure, there is provided a substrate processing method including performing batch processing of collectively processing a plurality of substrates, performing single-substrate processing of processing the plurality of substrates one by one after the batch processing, specifying a position of a cutout portion provided in an outer periphery of the substrate subjected to the batch processing, and rotating the substrate such that the specified position of the cutout portion becomes a first position. The performing of the single substrate processing includes drying the substrate, and the rotating of the substrate is performed before the drying of the substrate.SELECTED DRAWING: Figure 9

Description

[Technical Field]

[0001] The present disclosure relates to a substrate processing method and a substrate processing system. [Background technology]

[0002] A substrate processing system is known that includes a batch processing unit, a single wafer processing unit, and an interface unit. The batch processing unit processes a lot containing multiple substrates at once. The single wafer processing unit processes each substrate in the lot one by one. The interface unit transfers substrates from the batch processing unit to the single wafer processing unit. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2023-129235 [Patent Document 2] Japanese Patent Publication No. 2023-121707 [Patent Document 3] Japanese Patent Application Publication No. 2023-121571 Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique that can reduce variations in process performance. [Means for solving the problem]

[0005] A substrate processing method according to one aspect of the present disclosure includes performing batch processing to process a plurality of substrates at once, and performing single-wafer processing to process the plurality of substrates one by one after the batch processing, identifying the position of a notch provided on the outer periphery of the substrate that has been batch-processed, and rotating the substrate so that the identified position of the notch is at a first position, wherein performing the single-wafer processing includes drying the substrate, and rotating the substrate is performed before drying the substrate. [Effects of the Invention]

[0006] According to the present disclosure, variations in process performance can be reduced. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic plan view showing a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a plan view showing an example of a substrate. [Figure 3] FIG. 3 is a diagram illustrating an example of the second transfer table in FIG. [Figure 4] FIG. 4 is a diagram showing an example of the liquid treatment apparatus of FIG. [Figure 5] FIG. 5 is a diagram illustrating an example of the drying device of FIG. [Figure 6] FIG. 6 is a flowchart showing a substrate processing method according to an embodiment. [Figure 7] FIG. 7 is a diagram showing an example of the position of the notch before chemical treatment. [Figure 8] FIG. 8 is a diagram showing an example of the position of the notch after chemical treatment. [Figure 9] FIG. 9 is a flowchart showing an example of the notch position adjustment control. [Figure 10] FIG. 10 is a diagram illustrating an example of notch position adjustment control. [Figure 11] FIG. 11 is a diagram showing a first modified example of the second transfer table of FIG. [Figure 12] FIG. 12 is a diagram showing a second modified example of the second transfer table of FIG. DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the accompanying drawings, the same or corresponding reference numerals are used to designate the same or corresponding members or components, and redundant descriptions will be omitted.

[0009] In the following description, an XYZ Cartesian coordinate system is used, but this coordinate system is defined for the purpose of explanation and does not limit the attitude of the substrate processing system 1. The XY plane view is referred to as a planar view, and when viewed from an arbitrary point, the positive side of the Z axis may be referred to as the upper side, and the negative side of the Z axis may be referred to as the lower side.

[0010] [Substrate Processing System] A substrate processing system 1 according to an embodiment will be described with reference to Figures 1 and 2. Figure 1 is a schematic plan view showing the substrate processing system 1 according to an embodiment. Figure 2 is a plan view showing an example of a substrate W.

[0011] As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading section 2, a first interface section 3, a batch processing section 4, a second interface section 5, a single wafer processing section 6, and a control circuit 9.

[0012] The loading / unloading section 2 serves as both a loading section and an unloading section, thereby enabling a reduction in size of the substrate processing system 1. The loading / unloading section 2 includes a load port 21, a stocker 22, a loader 23, and a cassette transport device 24.

[0013] The load port 21 is arranged on the negative side of the X-axis of the loading / unloading section 2. A plurality of (for example, four) load ports 21 are arranged along the Y-axis. The number of load ports 21 is not particularly limited. A cassette C is placed on the load port 21. The cassette C stores a plurality of (for example, 25) substrates W. As shown in FIG. 2, the substrate W has a notch Wn. The notch Wn is provided on the outer periphery of the substrate W. The notch Wn is an example of a cutout portion. The cassette C is loaded into and unloaded from the load port 21. Inside the cassette C, the substrates W are held horizontally and at a second pitch P2 (P2 = N × P1) that is N times the first pitch P1 along the Z-axis. N is a natural number greater than or equal to 2, and is 2 in this embodiment, but may be 3 or greater.

[0014] A plurality of stockers 22 (for example, four) are arranged along the Y axis at the center of the X axis of the load / unload section 2. A plurality of stockers 22 (for example, two) are arranged adjacent to the first interface section 3 along the Y axis on the positive side of the X axis of the load / unload section 2. The stockers 22 may be arranged in multiple tiers along the Z axis. The stockers 22 temporarily store cassettes C containing substrates W before cleaning processing, cassettes C that have been emptied after the substrates W have been removed, etc. The number of stockers 22 is not particularly limited.

[0015] The loader 23 is adjacent to the first interface unit 3. The loader 23 is arranged on the positive side of the X-axis of the loading / unloading unit 2. A cassette C is placed on the loader 23. The loader 23 is provided with a lid opening / closing mechanism (not shown) for opening and closing the lid of the cassette C. A plurality of loaders 23 may be provided. The loaders 23 may be arranged in multiple stages along the Z-axis.

[0016] The cassette transfer device 24 transfers the cassette C between the load port 21, the stocker 22, and the loader 23. The cassette transfer device 24 is, for example, an articulated transfer robot.

[0017] The first interface section 3 is disposed on the X-axis positive side of the load / unload section 2. The first interface section 3 transports substrates W between the load / unload section 2, the batch processing section 4, and the single wafer processing section 6. The first interface section 3 has a substrate transfer device 31, a lot formation section 32, and a first delivery table 33.

[0018] The substrate transfer device 31 transports substrates W between a cassette C placed on the loader 23, the lot formation unit 32, and a first delivery table 33. The substrate transfer device 31 is made up of a multi-axis (e.g., six-axis) arm robot, and has a substrate holding arm 31a at its tip. The substrate holding arm 31a has multiple holding claws (not shown) that can hold multiple substrates W (e.g., 25 substrates W). The substrate holding arm 31a can assume any position and posture in three-dimensional space while holding substrates W with the holding claws.

[0019] The lot forming section 32 is disposed on the X-axis positive side of the first interface section 3. The lot forming section 32 holds a plurality of substrates W at a first pitch P1 and forms a lot.

[0020] The first delivery table 33 is adjacent to the single wafer processing unit 6. The first delivery table 33 is arranged on the Y-axis positive side of the first interface unit 3. The first delivery table 33 receives the substrate W from the single wafer processing unit 6 and temporarily stores the substrate W until it is handed over to the load / unload unit 2.

[0021] The batch processing unit 4 is disposed on the positive side of the X-axis of the first interface unit 3. The load / unload unit 2, the first interface unit 3, and the batch processing unit 4 are disposed in this order, from the negative side of the X-axis toward the positive side of the X-axis. The batch processing unit 4 processes a lot including a plurality of substrates W (for example, 50 or 100 substrates) arranged at a first pitch P1 at a time. One lot is made up of substrates W in, for example, M cassettes C. M is a natural number equal to or greater than 2. M may be the same natural number as N, or may be a natural number different from N. The batch processing unit 4 has a chemical liquid tank 41, a rinse liquid tank 42, a first transport device 43, a processing tool 44, and a drive device 45.

[0022] The chemical liquid tank 41 and the rinse liquid tank 42 are arranged along the X-axis. For example, the chemical liquid tank 41 and the rinse liquid tank 42 are arranged in this order from the positive side of the X-axis to the negative side of the X-axis. The chemical liquid tank 41 and the rinse liquid tank 42 are also collectively referred to as a processing tank. The number of chemical liquid tanks 41 and rinse liquid tanks 42 is not limited to that shown in FIG. 1. For example, although one set of chemical liquid tank 41 and rinse liquid tank 42 is shown in FIG. 1, multiple sets may be provided.

[0023] The chemical tank 41 stores a chemical in which the lot is immersed. The chemical is, for example, a phosphoric acid aqueous solution (H3PO4). The phosphoric acid aqueous solution selectively etches and removes the silicon nitride film out of the silicon oxide film and the silicon nitride film. The chemical is not limited to a phosphoric acid aqueous solution. The chemical may be DHF (dilute hydrofluoric acid), BHF (a mixture of hydrofluoric acid and ammonium fluoride), dilute sulfuric acid, SPM (a mixture of sulfuric acid, hydrogen peroxide, and water), SC1 (a mixture of ammonia, hydrogen peroxide, and water), SC2 (a mixture of hydrochloric acid, hydrogen peroxide, and water), TMAH (a mixture of tetramethylammonium hydroxide and water), a plating solution, or the like. The chemical may be for a stripping process or a plating process. The number of chemicals is not particularly limited, and multiple chemicals may be used.

[0024] The rinse liquid tank 42 stores a first rinse liquid in which the lot is immersed. The first rinse liquid is pure water that removes chemicals from the substrate W, such as DIW (deionized water).

[0025] The first transfer device 43 has a guide rail 43a and a first transfer arm 43b. The guide rail 43a is disposed on the negative side of the Y axis relative to the processing tank. The guide rail 43a extends along the X axis from the first interface unit 3 to the batch processing unit 4. The first transfer arm 43b moves along the guide rail 43a. The first transfer arm 43b may move along the Z axis or rotate around the Z axis. The first transfer arm 43b transfers lots in bulk between the first interface unit 3 and the batch processing unit 4.

[0026] The processing tool 44 receives and holds the lot from the first transport arm 43b. The processing tool 44 holds the plurality of substrates W at a first pitch P1 along the Y axis, and holds each of the plurality of substrates W vertically.

[0027] The driving device 45 moves the processing tool 44 along the X-axis and the Z-axis. The processing tool 44 immerses the lot in the chemical solution stored in the chemical solution tank 41, then immerses the lot in the first rinse solution stored in the rinse solution tank 42, and then transfers the lot to the first transfer device 43.

[0028] Although the number of units including the processing tool 44 and the driving device 45 is one in this embodiment, there may be more than one. In the latter case, one unit immerses the lot in the chemical solution stored in the chemical solution tank 41, and another unit immerses the lot in the first rinse solution stored in the rinse solution tank 42. In this case, the driving device 45 only needs to move the processing tool 44 along the Z axis, and does not need to move the processing tool 44 along the X axis.

[0029] The second interface unit 5 is disposed on the Y-axis positive side of the batch processing unit 4. The second interface unit 5 transports substrates W between the batch processing unit 4 and the single wafer processing unit 6. The second interface unit 5 has an immersion tank 51, a second transport device 52, a third transport device 53, and a second delivery table 54.

[0030] The immersion tank 51 is positioned outside the movement range of the first transport arm 43b. For example, the immersion tank 51 is positioned offset toward the positive side of the Y axis relative to the processing tank. The immersion tank 51 stores a second rinse liquid in which the lot is immersed. The second rinse liquid is, for example, DIW (deionized water). The substrate W is held in the second rinse liquid until it is lifted up from the second rinse liquid by the third transport device 53. Because the substrate W is located below the liquid surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrate W, preventing the concave-convex pattern of the substrate W from collapsing.

[0031] The second transfer device 52 has a Y-axis driving device 52a, a Z-axis driving device 52b, and a second transfer arm 52c.

[0032] The Y-axis drive device 52a is disposed on the X-axis positive side of the second interface unit 5. The Y-axis drive device 52a extends along the Y-axis from the second interface unit 5 to the batch processing unit 4. The Y-axis drive device 52a moves the Z-axis drive device 52b and the second transfer arm 52c along the Y-axis. The Y-axis drive device 52a may include a ball screw.

[0033] The Z-axis drive device 52b is movably attached to the Y-axis drive device 52a. The Z-axis drive device 52b moves the second transport arm 52c along the Z-axis. The Z-axis drive device 52b may include a ball screw.

[0034] The second transfer arm 52c is movably attached to the Z-axis driver 52b. The second transfer arm 52c receives and holds lots from the first transfer arm 43b. The second transfer arm 52c holds multiple substrates W at a first pitch P1 along the Y-axis, and holds each of the multiple substrates W vertically. The second transfer arm 52c is moved along the Y-axis and Z-axis by the Y-axis driver 52a and Z-axis driver 52b. The second transfer arm 52c is configured to be movable between multiple positions, including a transfer position, an immersion position, and a standby position.

[0035] The transfer position is a position where the lot is transferred between the first transfer arm 43b and the second transfer arm 52c, and is located on the negative side of the Y axis and the positive side of the Z axis.

[0036] The immersion position is a position where the lot is immersed in the immersion tank 51. The immersion position is located on the positive side of the Y axis and the negative side of the Z axis from the delivery position.

[0037] The standby position is a position where the second transport arm 52c waits when the lot is not being transferred or immersed in the immersion tank 51. The standby position is directly below the transfer position (negative side of the Z axis) and does not interfere with the movement of the first transport arm 43b. In this case, the second transport arm 52c can move to the transfer position simply by moving upward (positive side of the Z axis), thereby improving throughput. The standby position may be the same position as the immersion position. In this case, particles that may be generated by the operation of the first transport device 43 can be prevented from adhering to the second transport arm 52c. The standby position may be a position directly above the immersion position (positive side of the Z axis). In this way, by setting the standby position at a position different from the transfer position, contact between the first transport arm 43b and the second transport arm 52c can be prevented.

[0038] The second transfer device 52 moves the second transfer arm 52c to the immersion position or the standby position while the first transfer device 43 is operating, thereby preventing contact between the first transfer arm 43b and the second transfer arm 52c.

[0039] The third transfer device 53 is a multi-axis (e.g., six-axis) arm robot having a third transfer arm 53a at its tip. The third transfer arm 53a has holding claws (not shown) capable of holding one substrate W. The third transfer arm 53a can assume any position and posture in three-dimensional space while holding the substrate W with the holding claws. The third transfer device 53 transfers the substrate W between the second transfer arm 52c, which is in the immersion position, and the second transfer table 54. At this time, the immersion tank 51 is positioned outside the movement range of the first transfer arm 43b, so the first transfer arm 43b and the third transfer arm 53a do not interfere with each other. This allows one of the first transfer device 43 and the third transfer device 53 to operate independently, regardless of the operating state of the other. Therefore, the first transfer device 43 and the third transfer device 53 can be operated at any timing, thereby shortening the time required to transport the substrate W. As a result, the productivity of the substrate processing system 1 is improved.

[0040] The third transfer device 53 may have an imaging unit 53b. The imaging unit 53b is attached to, for example, the third transfer arm 53a. The imaging unit 53b images the top surface of the substrate W transferred by the third transfer arm 53a and acquires an image of the top surface of the substrate W. The imaging unit 53b transmits the acquired top surface image to the control circuit 9. The control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image acquired by the imaging unit 53b. The imaging unit 53b may include a camera and generate an image using the camera. The imaging unit 53b may include a laser light source and a camera and generate an image using a light-section method. The imaging unit 53b may be attached to a side wall, ceiling, or the like of the second interface unit 5 as long as it can capture an image of the top surface of the substrate W transferred by the third transfer arm 53a. In the example of FIG. 1, one imaging unit 53b is provided, but two or more imaging units 53b may be provided. The imaging unit 53b is an example of an identifying unit.

[0041] The second delivery stage 54 is adjacent to the single wafer processing unit 6. The second delivery stage 54 is arranged on the negative side of the X-axis of the second interface unit 5. The second delivery stage 54 receives the substrate W from the third transport device 53 and temporarily stores the substrate W until it is transferred to the single wafer processing unit 6. The substrate W taken out from the immersion bath 51 is placed on the second delivery stage 54. The surface of the substrate W placed on the second delivery stage 54 is wet with, for example, the second rinse liquid. In this case, the surface tension of the second rinse liquid does not act on the substrate W, and collapse of the concave-convex pattern of the substrate W can be suppressed. The number of second delivery stages 54 may be one or more.

[0042] The single wafer processing unit 6 is disposed on the negative side of the X axis of the second interface unit 5. The single wafer processing unit 6 is disposed on the positive side of the Y axis of the carry-in / out unit 2, the first interface unit 3, and the batch processing unit 4. The single wafer processing unit 6 processes substrates W one by one. The single wafer processing unit 6 has a fourth transfer device 61, a liquid processing device 62, and a drying device 63.

[0043] The fourth transport device 61 includes a guide rail 61a and a fourth transport arm 61b. The fourth transport device 61 may include an imaging unit 61c.

[0044] The guide rail 61a is disposed on the Y-axis negative side of the single wafer processing unit 6. The guide rail 61a extends along the X-axis in the single wafer processing unit 6.

[0045] The fourth transport arm 61b moves along the guide rail 61a. The fourth transport arm 61b rotates around the Z axis. The fourth transport arm 61b transports substrates W between the second transfer table 54, the liquid processing device 62, the drying device 63, and the first transfer table 33. The number of fourth transport arms 61b may be one or more, and in the latter case, the fourth transport device 61 transports multiple (e.g., five) substrates W at a time.

[0046] The imaging unit 61c is attached to the fourth transport arm 61b. The imaging unit 61c images the top surface of the substrate W transported by the fourth transport arm 61b and acquires an image of the top surface of the substrate W. The imaging unit 61c transmits the acquired top surface image to the control circuit 9. The control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image acquired by the imaging unit 61c. The imaging unit 61c may have the same configuration as the imaging unit 53b. The imaging unit 61c only needs to be able to image the top surface of the substrate W transported by the fourth transport arm 61b, and may be attached to a side wall, ceiling, etc. of the single-wafer processing unit 6. In the example of FIG. 1, there is one imaging unit 61c, but there may be two or more imaging units 61c. The imaging unit 61c is an example of an identification unit.

[0047] The liquid processing device 62 is disposed on the X-axis positive side and the Y-axis positive side of the single wafer processing device 6. The liquid processing device 62 is a single wafer type, and processes substrates W one by one with a processing liquid. The liquid processing device 62 is disposed in multiple stages (for example, three stages) along the Z axis. This allows multiple substrates W to be processed simultaneously with the processing liquid. There may be multiple processing liquids, and for example, pure water such as DIW and a drying liquid having a surface tension lower than that of pure water. The drying liquid may be, for example, an alcohol such as IPA (isopropyl alcohol).

[0048] The drying device 63 is disposed adjacent to the liquid processing device 62 on the negative side of the X axis. In this case, the end face of the single wafer processing device 6 on the positive side of the Y axis can be disposed flush or approximately flush with the end face of the second interface unit 5 on the positive side of the Y axis. This results in almost no dead space, thereby reducing the footprint of the substrate processing system 1. In contrast, if the drying device 63 is disposed adjacent to the liquid processing device 62 on the positive side of the Y axis, the end face of the single wafer processing device 6 on the positive side of the Y axis would protrude beyond the end face of the second interface unit 5 on the positive side of the Y axis, which could result in dead space. The drying device 63 is a single wafer processing device and dries each substrate W one by one with a supercritical fluid. The drying devices 63 are disposed in multiple stages (e.g., three stages) along the Z axis. This allows multiple substrates W to be dried simultaneously.

[0049] Both the liquid processing apparatus 62 and the drying apparatus 63 do not have to be of the single wafer type; the liquid processing apparatus 62 may be of the single wafer type and the drying apparatus 63 of the batch type. The drying apparatus 63 may dry a plurality of substrates W all at once using a supercritical fluid. The number of substrates W processed all at once in the drying apparatus 63 may be equal to or greater than the number of substrates W processed all at once in the liquid processing apparatus 62, but may also be less. Apparatus other than the liquid processing apparatus 62 and the drying apparatus 63 may be arranged in the single wafer processing apparatus 6.

[0050] The control circuit 9 is, for example, a computer. The control circuit 9 includes an arithmetic unit 91 such as a CPU (Central Processing Unit) and a storage unit 92 such as a memory. The storage unit 92 stores programs that control various processes executed in the substrate processing system 1. The control circuit 9 controls the operation of the substrate processing system 1 by causing the arithmetic unit 91 to execute the programs stored in the storage unit 92.

[0051] The control circuit 9 includes electronic circuits such as a CPU, an FPGA (Field Programmable Gate Array), or an ASIC (Application Specific Integrated Circuit), and performs the various control operations described in this specification by executing instruction codes stored in a memory or by being a circuit designed for a specific application.

[0052] In the substrate processing system 1, the substrate W is transported from the load / unload section 2 to the first interface section 3, the batch processing section 4, the second interface section 5 and the single wafer processing section 6 in this order, and then returns to the load / unload section 2.

[0053] [Second delivery platform] An example of the second delivery table 54 will be described with reference to Fig. 3. Fig. 3 is a diagram showing an example of the second delivery table 54 of Fig. 1. Fig. 3(a) is a plan view. Fig. 3(b) corresponds to a cross-sectional view taken along line IIb-IIb of Fig. 3(a).

[0054] 3, the second transfer table 54 has a substrate holder 70, an imaging unit 75, and a pure water supply unit 80. The pure water supply unit 80 is omitted from FIG. 3(a).

[0055] The substrate holding unit 70 has a liquid receiving unit 71 and a plurality of pins 72. The liquid receiving unit 71 has a bottom plate 71a and a wall portion 71b. The bottom plate 71a has a disk shape. The wall portion 71b is provided in an annular shape on the bottom plate 71a. The plurality of pins 72 are provided on the bottom plate 71a. In the example of FIG. 3, there are three pins 72, but there may be four or more. The surface including the upper end of each pin 72 is horizontal. The upper end of each pin 72 is located higher than the upper end of the wall portion 71b. The plurality of pins 72 hold the substrate W from below above the bottom plate 71a. A first liquid film LF1, which is a liquid film of the second rinse liquid, may be formed on the upper surface of the substrate W.

[0056] The imaging unit 75 is provided above the substrate holding unit 70. The imaging unit 75 images the top surface of the substrate W held by the pins 72 and acquires an image of the top surface of the substrate W. The imaging unit 75 images the top surface of the substrate W held by the pins 72, for example, before the pure water supply unit 80 supplies pure water to the substrate W. The imaging unit 75 may also image the top surface of the substrate W held by the pins 72 after the pure water supply unit 80 has supplied pure water to the substrate W. The imaging unit 75 transmits the acquired top surface image to the control circuit 9. The control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image acquired by the imaging unit 75. The imaging unit 75 may have the same configuration as the imaging unit 53b. It is sufficient for the imaging unit 75 to be able to image the top surface of the substrate W held by the pins 72. In the example of FIG. 3, there is one imaging unit 75, but there may be two or more imaging units 75. The imaging unit 75 is an example of an identifying unit.

[0057] The pure water supply unit 80 supplies pure water to the upper surface of the substrate W. The pure water supply unit 80 has a nozzle 81, a pure water supply line 82, and a return line 83. The pure water supply line 82 is connected to the nozzle 81. The nozzle 81 ejects the pure water supplied through the pure water supply line 82. A branch point 85 is provided in the pure water supply line 82, and the return line 83 is connected to the branch point 85. Even during periods when pure water is not being ejected from the nozzle 81, pure water flows through the portion of the pure water supply line 82 upstream of the branch point 85 and the return line 83.

[0058] [Liquid Treatment Apparatus] An example of liquid treatment device 62 will be described with reference to Fig. 4. Fig. 4 is a diagram showing an example of liquid treatment device 62 of Fig. 1.

[0059] 4, liquid processing apparatus 62 includes a processing vessel 111, a substrate holding unit 114, a substrate rotating unit 115, a nozzle 116, a nozzle moving unit 117, a cup 118, a drain pipe 119, and an exhaust pipe 120. Liquid processing apparatus 62 may include an imaging unit 121.

[0060] The processing vessel 111 accommodates a substrate holder 114 and the like. A gate 112 and a gate valve 113 are provided on a sidewall of the processing vessel 111. The gate valve 113 opens and closes the gate 112. A substrate W is loaded into the processing vessel 111 through the gate 112 by a fourth transfer device 61 (see FIG. 1). The substrate W is processed with a processing liquid L inside the processing vessel 111. The substrate W is unloaded from the processing vessel 111 through the gate 112 by the fourth transfer device 61.

[0061] The substrate holding part 114 is provided inside the processing vessel 111. The substrate holding part 114 holds the substrate W horizontally. The substrate holding part 114 has a plurality of (e.g., three) clamps 114a. The plurality of clamps 114a are provided at equal intervals in the circumferential direction of the substrate W. Each clamp 114a holds the outer periphery of the substrate W.

[0062] The substrate rotation unit 115 rotates the substrate holding unit 114, thereby rotating the substrate W together with the substrate holding unit 114. The substrate rotation unit 115 includes a motor and the like.

[0063] The nozzle 116 supplies the processing liquid L to the substrate W. The nozzle 116 supplies the processing liquid L to the substrate W, for example, while the substrate W is rotating.

[0064] The nozzle moving unit 117 moves the nozzle 116 in the horizontal direction. The nozzle moving unit 117 moves the nozzle 116, for example, in the radial direction of the substrate W. The nozzle moving unit 117 has an arm 117a and a driving unit 117b. The arm 117a holds the nozzle 116. The driving unit 117b rotates the arm 117a.

[0065] The cup 118 surrounds the outer periphery of the substrate W held by the substrate holder 114. The cup 118 collects the processing liquid L that splashes from the outer periphery of the substrate W.

[0066] The drain pipe 119 and the exhaust pipe 120 are provided at the bottom of the cup 118. The drain pipe 119 discharges the processing liquid L that has accumulated inside the cup 118. The exhaust pipe 120 discharges the gas that has accumulated inside the cup 118.

[0067] The imaging unit 121 is provided above the substrate holding unit 114. The imaging unit 121 images the top surface of the substrate W held by the substrate holding unit 114 and acquires an image of the top surface of the substrate W. The imaging unit 121 images the top surface of the substrate W held by the substrate holding unit 114, for example, before the nozzle 116 supplies the processing liquid L to the substrate W. The imaging unit 121 may also image the top surface of the substrate W held by the substrate holding unit 114 after the nozzle 116 supplies the processing liquid L to the substrate W. The imaging unit 121 transmits the acquired top surface image to the control circuit 9. The control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image acquired by the imaging unit 121. The imaging unit 121 may have the same configuration as the imaging unit 53b. It is sufficient that the imaging unit 121 is able to image the top surface of the substrate W held by the substrate holding unit 114. In the example of FIG. 4, there is one imaging unit 121, but there may be two or more imaging units 121. The imaging unit 121 is an example of a specifying unit.

[0068] [Drying equipment] An example of the drying device 63 will be described with reference to Fig. 5. Fig. 5 is a diagram showing an example of the drying device 63 of Fig. 1.

[0069] As shown in FIG. 5, the drying apparatus 63 includes a pressure-resistant container 131, a movable tray 133, and a supply port 136. The pressure-resistant container 131 has an inlet / outlet 132 for loading and unloading the substrate W. The movable tray 133 has a lid 134 and a holder 135. The lid 134 opens and closes the inlet / outlet 132. The holder 135 holds the substrate W horizontally. With the lid 134 closing the inlet / outlet 132, the holder 135 holds the substrate W horizontally inside the pressure-resistant container 131. The supply port 136 supplies a supercritical fluid such as carbon dioxide into the inside of the pressure-resistant container 131. The number and position of the supply ports 136 are not limited to those shown in FIG. 5.

[0070] [Operation of the Substrate Processing System] The operation of the substrate processing system 1 according to the embodiment, i.e., the substrate processing method, will be described with reference to Fig. 1 and Fig. 6. Fig. 6 is a flowchart showing the substrate processing method according to the embodiment. The substrate processing method shown in Fig. 6 is performed under the control of a control circuit 9.

[0071] First, a cassette C containing a plurality of substrates W is loaded into the load / unload section 2 and placed on the load port 21. Inside the cassette C, the substrates W are held horizontally and at a second pitch P2 (P2 = N × P1) along the Z axis. N is a natural number of 2 or more, and is 2 in this embodiment, but may be 3 or more.

[0072] Next, the cassette transport device 24 transports the cassette C from the load port 21 to the loader 23. The lid of the cassette C transported to the loader 23 is opened by the lid opening / closing mechanism.

[0073] Next, the substrate transfer device 31 receives the substrates W accommodated in the cassette C (S1 in FIG. 6), and transports them to the lot formation section 32.

[0074] Next, the lot forming unit 32 holds multiple substrates W at a first pitch P1 (P1=P2 / N) to form a lot (S2 in FIG. 6). One lot is made up of, for example, substrates W in M ​​cassettes C. Because the pitch of the substrates W narrows from the second pitch P2 to the first pitch P1, the number of substrates W to be processed at one time can be increased.

[0075] Next, the first transport device 43 receives the lot from the lot formation unit 32 and transports it to the processing tool 44 .

[0076] Next, the processing tool 44 descends from above the chemical liquid tank 41, immerses the lot in the chemical liquid, and performs chemical processing (S3 in FIG. 6). Thereafter, the processing tool 44 ascends to lift the lot from the chemical liquid, and then moves toward the negative side of the X axis above the rinse liquid tank 42.

[0077] Next, the processing tool 44 descends from above the rinse liquid tank 42, immerses the lot in the first rinse liquid, and performs rinse liquid processing (S3 in FIG. 6). Thereafter, the processing tool 44 ascends to lift the lot out of the first rinse liquid. Next, the first transfer device 43 receives the lot from the processing tool 44 and transfers it to the second transfer device 52.

[0078] Next, the second transport arm 52c of the second transport device 52 moves to the positive side of the Y axis and descends from above the immersion tank 51 to immerse the lot in the second rinse liquid (S4 in FIG. 6). The multiple substrates W of the lot are held in the second rinse liquid until they are lifted up from the second rinse liquid by the third transport device 53. Because the substrates W are present below the surface of the second rinse liquid, the surface tension of the second rinse liquid does not act on the substrates W, preventing the concave-convex pattern of the substrates W from collapsing.

[0079] Next, the third transfer device 53 transfers the substrates W of the lot held by the second transfer arm 52c in the second rinse liquid to the second transfer table 54. The third transfer device 53, for example, transfers the substrates W one by one to the second transfer table 54. On the second transfer table 54, pure water is discharged onto the upper surface of the substrate W to prevent the upper surface of the substrate W from drying out and causing the concave-convex pattern to collapse, and a second liquid film LF2, which is a liquid film of pure water, is formed.

[0080] Next, the fourth transfer device 61 receives the substrate W from the second delivery table 54 and transfers it to the liquid treatment device 62.

[0081] Next, the liquid processing device 62 processes the substrates W one by one with a liquid (S5 in FIG. 6). The liquid may be a plurality of liquids, for example, pure water such as DIW and a drying liquid having a lower surface tension than pure water. The drying liquid may be, for example, alcohol such as IPA. The liquid processing device 62 supplies pure water and the drying liquid in this order onto the upper surface of the substrate W to form a liquid film of the drying liquid.

[0082] Next, the fourth transfer device 61 receives the substrate W from the liquid treatment device 62 and holds the substrate W horizontally with the film of drying liquid facing upward. The fourth transfer device 61 transfers the substrate W from the liquid treatment device 62 to the drying device 63.

[0083] Next, the drying device 63 dries the substrates W one by one with a supercritical fluid (S5 in FIG. 6). The drying liquid can be replaced with the supercritical fluid, and collapse of the uneven pattern on the substrate W due to the surface tension of the drying liquid can be suppressed. Since the supercritical fluid requires a pressure-resistant container, single-wafer processing is performed rather than batch processing in order to miniaturize the pressure-resistant container.

[0084] In this embodiment, the drying apparatus 63 is of a single-wafer type, but as described above, it may be of a batch type. The batch-type drying apparatus 63 dries multiple substrates W on which a liquid film has been formed all at once with a supercritical fluid. While the single-wafer type drying apparatus 63 has one transport arm for holding the substrates W, the batch-type drying apparatus 63 has multiple transport arms.

[0085] In this embodiment, the drying device 63 dries the substrate W by supercritical drying, but the drying method is not particularly limited. Any drying method that can prevent the concavo-convex pattern of the substrate W from collapsing may be used, for example, spin drying, scan drying, or water-repellent drying. In spin drying, the liquid treatment device 62 rotates the substrate W and uses centrifugal force to spin off the drying liquid from the substrate W, thereby removing the drying liquid from the top surface of the substrate W. In scan drying, the substrate W is rotated while the supply position of the drying liquid is moved from the center of the substrate W toward the periphery of the substrate W, and the liquid film is shaken off from the substrate W by centrifugal force. In scan drying, the supply position of a drying gas, such as nitrogen gas, may also be moved from the center of the substrate W toward the periphery of the substrate W to follow the supply position of the drying liquid.

[0086] Next, the fourth transfer device 61 receives the substrate W from the drying device 63 and transfers it to the first delivery table 33.

[0087] Next, the substrate transfer device 31 receives the substrate W from the first delivery table 33 and stores it in the cassette C (S6 in FIG. 6). The cassette C, containing the plurality of substrates W, is carried out from the carry-in / out section 2. This completes the substrate processing method according to the embodiment.

[0088] Fig. 7 is a diagram showing an example of the position of the notch Wn before chemical liquid processing. Fig. 8 is a diagram showing an example of the position of the notch Wn after chemical liquid processing. Figs. 7 and 8 show five substrates W that are part of the multiple substrates W that make up a lot.

[0089] As shown in FIG. 7 , before chemical processing is performed in the chemical tank 41, the substrates W are held in the processing tool 44 with the notch Wn positions aligned among the substrates W. In contrast, as shown in FIG. 8 , when chemical processing is performed in the chemical tank 41, the substrates W held in the processing tool 44 rotate on the processing tool 44, which may result in variations in the positions of the notches Wn among the substrates W. In particular, if the substrates W to be chemically processed have warpage (e.g., saddle warpage), the amount of rotation of the substrates W on the processing tool 44 is likely to be large. When the substrates W are loaded into the single-wafer processing unit 6 with variations in the positions of the notches Wn among the substrates W, the substrates W are processed in the liquid processing unit 62 and the drying unit 63 with the positions of the notches Wn varying among the substrates W. In this case, variations in process performance among the substrates W are likely to occur. The process performance includes pattern collapse performance, liquid splash due to differences in fluttering during substrate rotation, particle performance, etching performance, and the like.

[0090] Below, we will explain a technology that can reduce variations in process performance among multiple substrates W by identifying the position of the notch Wn of each substrate W after it has been processed in the batch processing unit 4 and rotating each substrate W so that the position of the notch Wn is in a first position.

[0091] [Notch position adjustment control] 9 and 10, an example of control including adjusting the positions of the notches Wn of the plurality of substrates W after being processed in the batch processing unit 4 (hereinafter referred to as "notch position adjustment control") will be described.

[0092] 9 is a flowchart showing an example of notch position adjustment control. The notch position adjustment control shown in FIG.

[0093] FIG. 10 is a diagram showing an example of notch position adjustment control. In FIG. 10, (a) shows a substrate W on the second transfer table 54, (b) and (c) show a substrate W in the liquid processing device 62, and (d) shows a substrate W in the drying device 63. (b) shows the substrate W before the position of the notch Wn is adjusted, and (c) shows the substrate W after the position of the notch Wn has been adjusted. In (a) to (d), the reference position is indicated by a dashed line. In the example of FIG. 10, the reference position is the 0 o'clock direction. The reference position in the second transfer table 54 is, for example, the position farthest from the loading / unloading port through which the substrate W is loaded and unloaded by the fourth transfer device 61 (the position on the positive side of the X axis in FIG. 1). The reference position in the liquid processing device 62 is, for example, the position farthest from the gate 112 through which the substrate W is loaded and unloaded by the fourth transfer device 61 (the position on the positive side of the Y axis in FIGS. 1 and 4). The reference position in the drying device 63 is, for example, the position farthest from the loading / unloading port 132 through which the substrate W is loaded and unloaded by the fourth transfer device 61 (the position on the positive side of the Y axis in FIGS. 1 and 5).

[0094] In step S101, the third transfer device 53 transfers the substrate W from the immersion bath 51 to the second transfer table 54. On the second transfer table 54, three pins 72 hold the substrate W horizontally. At this time, a first liquid film LF1, which is a liquid film of the second rinse liquid, is formed on the upper surface of the substrate W. The position of the notch Wn of the substrate W held by the three pins 72 may be shifted from the reference position. In the example of FIG. 10(a), the reference position is the 0 o'clock direction, and the position of the notch Wn is the 2 o'clock direction.

[0095] In step S102, the imaging unit 75 captures an image of the top surface of the substrate W held by the three pins 72, and acquires an image of the top surface of the substrate W. The imaging unit 75 transmits the acquired top surface image to the control circuit 9. The control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image acquired by the imaging unit 75. In the example of FIG. 10, the control circuit 9 identifies the position of the notch Wn as being in the 2 o'clock direction.

[0096] In step S103, the control circuit 9 determines whether the position of the notch Wn identified in step S102 is deviated from the reference position. In the example of Fig. 10, the control circuit 9 determines that the position of the notch Wn is deviated from the reference position because the position of the notch Wn differs from the reference position.

[0097] If it is determined in step S103 that the position of the notch Wn is deviated from the reference position (YES in step S103), the control circuit 9 proceeds to step S111. The control circuit 9 performs steps S111 to S117 shown below in this order.

[0098] In step S111, the pure water supply unit 80 discharges pure water toward the upper surface of the substrate W. As a result, a second liquid film LF2, which is a liquid film of pure water, is formed on the upper surface of the substrate W. After the second liquid film LF2 is formed on the upper surface of the substrate W, the pure water supply unit 80 stops discharging pure water onto the substrate W.

[0099] In step S112, the fourth transfer device 61 transfers the substrate W from the second transfer table 54 to the liquid processing device 62. In the liquid processing device 62, the substrate holder 114 holds the substrate W horizontally. The substrate W held by the substrate holder 114 inherits the position of the notch Wn of the substrate W immediately before it was transferred from the second transfer table 54. As a result, the position of the notch Wn is shifted from the reference position. In the example of FIG. 10, as shown in (b), the reference position is the 0 o'clock direction, and the position of the notch Wn is the 2 o'clock direction.

[0100] In step S113, the substrate rotation unit 115 rotates the substrate holding unit 114, thereby rotating the substrate W together with the substrate holding unit 114 so that the position of the notch Wn identified in step S102 is at the first position. The first position is, for example, a reference position. The first position may be a position different from the reference position. The first position may be a desired position set in a processing recipe. The desired position is determined, for example, based on the characteristics of the substrate W that has previously been dried in the drying apparatus 63. The characteristics of the substrate W include, for example, the distribution of collapse of the uneven pattern within the surface of the substrate W. In the example of FIG. 10, as shown in (c), the position of the notch Wn is in the 0 o'clock direction, which coincides with the reference position.

[0101] In step S114, the liquid processing device 62 performs liquid processing to process the substrate W with a processing liquid. The processing liquid may be, for example, pure water such as DIW and a drying liquid having a lower surface tension than pure water. The drying liquid may be, for example, alcohol such as IPA. The liquid processing device 62 supplies the pure water and the drying liquid in this order onto the upper surface of the substrate W to form a liquid film of the drying liquid.

[0102] In step S115, the fourth transfer device 61 transfers the substrate W from the liquid processing device 62 to the drying device 63. In the drying device 63, the holder 135 holds the substrate W horizontally with the liquid film of the drying liquid facing upward. The substrate W held by the holder 135 inherits the position of the notch Wn of the substrate W immediately before it was transferred out of the liquid processing device 62. Therefore, the position of the notch Wn coincides with the first position. In the example of FIG. 10, as shown in (d), the position of the notch Wn is in the 0 o'clock direction, which coincides with the reference position.

[0103] In step S116, the drying device 63 performs a drying process using a supercritical fluid to dry the substrate W. The drying liquid can be replaced with the supercritical fluid, and collapse of the concave-convex pattern on the substrate W due to the surface tension of the drying liquid can be suppressed.

[0104] In step S117, the fourth transport device 61 receives the substrate W from the drying device 63 and transports it to the first delivery table 33. Next, the substrate transfer device 31 receives the substrate W from the first delivery table 33 and stores it in the cassette C. The cassette C is carried out from the carry-in / out section 2 with multiple substrates W stored therein.

[0105] If it is determined in step S103 that the position of the notch Wn is not deviated from the reference position (NO in step S103), the control circuit 9 proceeds to step S121. The control circuit 9 performs the following steps S121, S122, S124, S125, S126, and S117 in this order.

[0106] Steps S121, S122, S124, S125, and S126 are the same as steps S111, S112, S114, S115, and S116, respectively. That is, if the position of the notch Wn is not deviated from the reference position, the control circuit 9 performs the liquid treatment and drying treatment without adjusting the position of the notch Wn, and proceeds to step S117.

[0107] As described above, according to the embodiment, before the drying process is performed on the substrate W, the position of the notch Wn of the substrate W is identified, and the substrate W is rotated so that the identified position of the notch Wn becomes the first position. In this case, the drying process can be performed on the substrates W with the notch Wn positions aligned among the multiple substrates W. This reduces variations in process performance among the multiple substrates W. Furthermore, since the positions of the notches Wn after the drying process can all be aligned among the multiple substrates W, variations in the processes performed on the substrates W after they are unloaded from the substrate processing system 1 (hereinafter also referred to as "post-processes") are improved. Furthermore, the process of aligning the notch Wn positions for the multiple substrates W in the post-processes can be omitted. This improves productivity and reduces deterioration of process performance due to Q time.

[0108] 9 and 10, the case where the imaging unit 75 images the upper surface of the substrate W before the pure water supply unit 80 dispenses pure water onto the substrate W has been described, but this is not limiting. For example, the imaging unit 75 may image the upper surface of the substrate W after the pure water supply unit 80 dispenses pure water onto the substrate W. That is, steps S111 and S121 may be performed between steps S101 and S102.

[0109] 9 and 10, the example has been described in which the imaging unit 75 acquires a top surface image of the substrate W held by three pins 72 on the second transfer table 54, and the control circuit 9 identifies the position of the notch Wn of the substrate W based on the top surface image. However, this is not limiting. For example, when the third transfer device 53 transports the substrate W, the imaging unit 53b may acquire a top surface image of the substrate W transported by the third transport arm 53a, and the control circuit 9 may identify the position of the notch Wn of the substrate W based on the top surface image. For example, when the fourth transfer device 61 transports the substrate W, the imaging unit 61c may acquire a top surface image of the substrate W transported by the fourth transport arm 61b, and the control circuit 9 may identify the position of the notch Wn of the substrate W based on the top surface image. For example, in the liquid processing device 62, the imaging unit 121 may acquire a top surface image of the substrate W held by the substrate holder 114, and the control circuit 9 may identify the position of the notch Wn of the substrate W based on the top surface image.

[0110] 9 and 10, the case has been described in which the substrate rotation unit 115 rotates the substrate holder 114 in the liquid processing apparatus 62 to rotate the substrate W so that the position of the notch Wn is at the first position, but this is not limiting. For example, the substrate W may be rotated on the second delivery table 54 so that the position of the notch Wn is at the first position.

[0111] Figure 11 is a diagram showing a first modified example of the second transfer table 54 of Figure 1. As shown in Figure 11, the substrate holder 70 may have a rotary chuck 73 instead of the multiple pins 72. The rotary chuck 73 suction-holds the substrate W so that it can rotate around a vertical axis. The rotary chuck 73 rotates the substrate W so that the position of the notch Wn is at the first position.

[0112] 9 and 10, a case has been described in which the desired position in step S113 is determined based on the characteristics of the substrate W previously subjected to drying processing in the drying apparatus 63, but this is not limiting. For example, the desired position in step S113 may be determined based on the amount of warpage of the substrate W in addition to or instead of the characteristics of the substrate W previously subjected to drying processing in the drying apparatus 63.

[0113] Fig. 12 is a diagram showing a second modified example of the second transfer table 54 of Fig. 1. As shown in Fig. 12, the second transfer table 54 may further include an imaging unit 74, and the substrate holder 70 may include a rotary chuck 73 instead of the multiple pins 72.

[0114] The imaging unit 74 is provided on the side of the substrate W held by suction on the rotary chuck 73. The imaging unit 74 images the substrate W, which is held by suction on the rotary chuck 73 and rotates around a vertical axis, from the side, and acquires an image of the edge surface of the substrate W. The imaging unit 74 transmits the acquired image of the edge surface to the control circuit 9. The control circuit 9 calculates the amount of warpage of the substrate W based on the image of the edge surface acquired by the imaging unit 74. The control circuit 9 may determine a desired position based on the calculated amount of warpage. The imaging unit 74 may have the same configuration as the imaging unit 53b. It is sufficient that the imaging unit 74 is able to image the substrate W held by suction on the rotary chuck 73 from the side. In the example of FIG. 12, there is one imaging unit 74, but there may be two or more imaging units 74.

[0115] Instead of the imaging unit 74, a laser displacement meter may be provided above the substrate holding unit 70. For example, when the third transfer device 53 transfers the substrate W onto the second transfer table 54, the laser displacement meter may measure the height of the substrate W at a plurality of positions including the height at the center position and the height at the peripheral position, and the control circuit 9 may calculate the amount of warpage of the substrate W based on the heights at the plurality of positions. For example, when the fourth transfer device 61 transfers the substrate W from the second transfer table 54, the laser displacement meter may measure the height of the substrate W at a plurality of positions including the height at the center position and the height at the peripheral position, and the control circuit 9 may calculate the amount of warpage of the substrate W based on the heights at the plurality of positions. The number of laser displacement meters may be one or more.

[0116] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0117] In the above embodiment, the liquid treatment device 62 is disposed on the positive side of the Y axis relative to the fourth transfer device 61, but the present disclosure is not limited to this. For example, the liquid treatment device 62 may be disposed on the negative side of the Y axis relative to the fourth transfer device 61. In this case, the reference position is the position farthest from the gate through which the substrate W is carried in and out by the fourth transfer device 61 (the position on the negative side of the Y axis).

[0118] In the above embodiment, the position of the notch Wn of the substrate W is identified based on the top surface image of the substrate W captured by the imaging unit 75, but the present disclosure is not limited to this. For example, the position of the notch Wn of the substrate W may be identified by a notch sensor. The notch sensor is provided, for example, on the second transfer table 54. The notch sensor may also be provided in the liquid processing device 62.

[0119] In the above embodiment, the cutout portion is a notch Wn, but the present disclosure is not limited to this. The cutout portion may be any portion formed to indicate the crystal orientation of the substrate W. The cutout portion may also be an orientation flat. [Explanation of symbols]

[0120] W substrate Wn notch

Claims

1. Batch processing is performed to process multiple substrates at once; performing single-wafer processing for processing the plurality of substrates one by one after the batch processing; Identifying the position of a notch provided on the outer periphery of the substrate that has been subjected to the batch processing; rotating the substrate so that the identified position of the cutout is a first position; and performing the single wafer processing includes drying the substrate; rotating the substrate is performed prior to drying the substrate. Substrate processing method.

2. the first position is determined based on characteristics of the substrate after a previous drying of the substrate; The substrate processing method according to claim 1 .

3. the substrate has a concave-convex pattern on its surface; The characteristics of the substrate include a distribution of collapse of the concave-convex pattern within the surface of the substrate. The substrate processing method according to claim 2 .

4. performing the single wafer processing includes treating the substrate with a processing liquid before drying the substrate; rotating the substrate prior to treating the substrate with a treatment liquid; The substrate processing method according to claim 1 .

5. performing the single wafer processing includes treating the substrate with a processing liquid before drying the substrate; rotating the substrate occurs after treating the substrate with a treatment liquid; The substrate processing method according to claim 1 .

6. treating the substrate with a treatment liquid includes forming a liquid film of a drying liquid on an upper surface of the substrate; Drying the substrate includes replacing the liquid film of the drying liquid with a supercritical fluid and drying the substrate. The substrate processing method according to claim 4 or 5.

7. The method further includes holding the substrate horizontally and storing the substrate after performing the batch processing and before performing the single wafer processing, The position of the notch is identified simultaneously with holding the substrate horizontally. The substrate processing method according to claim 1 .

8. holding the substrate horizontally includes supplying a processing liquid to an upper surface of the substrate to prevent the upper surface from drying; The position of the notch is identified before the processing liquid is supplied. The substrate processing method according to claim 7 .

9. The method further includes calculating the amount of warpage of the substrate after the batch processing is performed, the first position is determined based on the amount of warpage of the substrate; The substrate processing method according to claim 1 .

10. The cutout portion is a notch or an orientation flat. The substrate processing method according to claim 1 .

11. a batch processing unit that processes multiple substrates at once; a single wafer processing section for processing substrates one by one; an identifying unit that identifies the position of a notch provided on the outer periphery of the substrate; a rotating unit that rotates the substrate; a control circuit; Equipped with The control circuit Controlling the batch processing unit to perform batch processing for processing a plurality of the substrates at once; controlling the single wafer processing unit to perform single wafer processing in which the single wafer processing unit processes the plurality of substrates one by one after the batch processing; Control by the identifying unit to identify a position of a notch provided on an outer periphery of the substrate on which the batch processing has been performed; Controlling the rotation unit to rotate the substrate so that the position of the identified notch portion is a first position; and the control of performing the single wafer processing includes drying the substrate; The controlled rotation of the substrate is performed before drying the substrate. Substrate processing system.

Images