Substrate processing apparatus and substrate processing method

Abstract

To provide a substrate processing apparatus capable of enhancing cleanliness of a substrate after cleaning while suppressing an increase in frequency of maintenance such as component replacement.SOLUTION: The upper surface of the substrate is cleaned in the substrate processing apparatus. The substrate processing apparatus performs a substrate cleaning process as follows. In a state where the substrate is held by the substrate holding unit, the chemical liquid is discharged from the first liquid nozzle to the substrate, and a liquid film of the chemical liquid is formed on the substrate. The rinse liquid is discharged from the second liquid nozzle to the substrate, and at least a part of the liquid film of the chemical liquid formed on the substrate is replaced with the rinse liquid. A liquid film of the rinse liquid is formed on the substrate. The mixed fluid of the gas and the rinse liquid is ejected from the two-fluid nozzle to the substrate, and physical cleaning is performed by the mixed fluid.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for performing a predetermined process on a substrate. [Background technology]

[0002] Substrate processing apparatuses are used to perform various processes on various substrates such as substrates for FPDs (Flat Panel Displays) used in liquid crystal displays or organic EL (Electro Luminescence) displays, semiconductor substrates, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, or substrates for solar cells.

[0003] There is a substrate processing apparatus having a cleaning function for cleaning a substrate. An example of such a substrate processing apparatus is described in Patent Document 1. In this substrate processing apparatus, during substrate cleaning, multiple types of processing liquids, including SC1 (a mixed solution of ammonia water and hydrogen peroxide water), are sequentially supplied to one surface (top surface) of a substrate held and rotated by a substrate holder. SC1 is the last of the multiple types of processing liquids to be supplied to the substrate. After SC1 is supplied to one surface of the substrate, a mixed fluid of DIW (deionized water) and a gas is supplied to the one surface of the substrate. The mixed fluid contains fine droplets of DIW, and physically cleans the one surface of the substrate by colliding with the surface. After the mixed fluid is supplied, the substrate is spin-dried. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] International Publication No. 2024 / 014291 Summary of the Invention [Problem to be solved by the invention]

[0005] As described above, in the substrate processing apparatus described in Patent Document 1, SC1 is supplied to the substrate immediately before physical cleaning of one surface of the substrate with the fluid mixture in order to improve the cleanliness of the substrate after cleaning. However, in this cleaning method, SC1 present on the substrate at the start of cleaning with the fluid mixture may be splashed up from the one surface of the substrate when the substrate collides with the fluid mixture, and may become fine droplets and scatter around the substrate.

[0006] SC1 has a strong corrosive effect on metal materials. Therefore, if the space surrounding the substrate during cleaning is filled with an atmosphere containing SC1 components (hereinafter referred to as the chemical atmosphere), the lifespan of components exposed to the chemical atmosphere in the substrate processing apparatus may be shortened. In this case, the frequency of maintenance of the substrate processing apparatus, such as component replacement, will increase.

[0007] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can improve the cleanliness of a substrate after cleaning while suppressing an increase in the frequency of maintenance such as part replacement. [Means for solving the problem]

[0008] A substrate processing apparatus according to one aspect of the present invention is a substrate processing apparatus for processing a substrate, comprising: a substrate holding unit for holding the substrate; a first liquid nozzle for discharging a chemical liquid onto the substrate; a second liquid nozzle for discharging a rinse liquid onto the substrate; a two-fluid nozzle for spraying a mixed fluid containing a gas and the rinse liquid onto the substrate; a chemical liquid supply unit for supplying the chemical liquid to the first liquid nozzle; a rinse liquid supply unit for supplying the rinse liquid to the second liquid nozzle and the two-fluid nozzle; a gas supply unit for supplying the gas to the two-fluid nozzle; and a control unit, wherein the control unit controls the control unit to control ... A first control is performed in which the chemical liquid supply unit is controlled to eject the chemical liquid from the first liquid nozzle onto the substrate, thereby forming a liquid film of the chemical liquid on the substrate. A second control is performed in which the rinse liquid supply unit is controlled to eject the rinse liquid from the second liquid nozzle onto the substrate, thereby replacing at least a portion of the liquid film of the chemical liquid formed on the substrate by the first control with the rinse liquid, thereby forming a liquid film of the rinse liquid on the substrate. A third control is performed in which the rinse liquid supply unit and the gas supply unit are controlled to spray the mixed fluid onto the substrate from the two-fluid nozzle.

[0009] A substrate processing method according to another aspect of the present invention is a substrate processing method for processing a substrate using a substrate processing apparatus, the substrate processing apparatus including a substrate holding unit for holding the substrate, a first liquid nozzle for discharging a chemical liquid onto the substrate, a second liquid nozzle for discharging a rinse liquid onto the substrate, and a two-fluid nozzle for spraying a mixed fluid containing a gas and the rinse liquid onto the substrate, the substrate processing method including: a first step of discharging the chemical liquid from the first liquid nozzle onto the substrate while the substrate is held by the substrate holding unit, thereby forming a liquid film of the chemical liquid on the substrate; a second step of discharging the rinse liquid from the second liquid nozzle onto the substrate, thereby replacing at least a portion of the liquid film of the chemical liquid formed on the substrate in the first step with the rinse liquid; and a third step of spraying the mixed fluid onto the substrate from the two-fluid nozzle. [Effects of the Invention]

[0010] According to the present invention, a substrate processing apparatus is realized that can improve the cleanliness of a substrate after cleaning while suppressing an increase in the frequency of maintenance such as part replacement. [Brief explanation of the drawings]

[0011] [Figure 1] 1 is a schematic side view of a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] FIG. 2 is a schematic plan view showing the internal configuration of the substrate processing apparatus of FIG. [Figure 3] 2 is a block diagram showing the configuration of a control system of the substrate processing apparatus of FIG. 1. FIG. [Figure 4] 2 is a flowchart showing a series of steps in a cleaning process performed by the substrate processing apparatus of FIG. [Figure 5] FIG. 5 is a schematic side view for explaining the operation of the substrate processing apparatus according to the flowchart of FIG. [Figure 6] FIG. 5 is a schematic side view for explaining the operation of the substrate processing apparatus according to the flowchart of FIG. [Figure 7] FIG. 5 is a schematic side view for explaining the operation of the substrate processing apparatus according to the flowchart of FIG. [Figure 8] FIG. 1 is a diagram showing the results of a first detergency test. [Figure 9] FIG. 10 is a diagram showing the results of a second detergency test. [Figure 10] FIG. 10 is a schematic perspective view for explaining the contents of a chemical atmosphere evaluation test. [Figure 11] FIG. 10 is a diagram showing the results of a chemical atmosphere evaluation test. DETAILED DESCRIPTION OF THE INVENTION

[0012] A substrate processing apparatus and a substrate processing method according to an embodiment of the present invention will be described below with reference to the drawings. In the following description, the term "substrate" refers to a substrate for an FPD (Flat Panel Display) used in a liquid crystal display device or an organic EL (Electroluminescence) display device, a semiconductor substrate, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell. Furthermore, the upper surface of the substrate refers to the surface of the substrate facing upward, and the lower surface of the substrate refers to the surface of the substrate facing downward. The upper surface of the substrate may be the surface on which a circuit is formed (front surface) or the surface opposite the surface on which a circuit is formed (rear surface). Furthermore, the substrate has a circular shape in a plan view excluding the notch.

[0013] 1. Configuration of substrate processing equipment The substrate processing apparatus described below performs a cleaning process for cleaning a substrate by supplying various processing liquids and a fluid mixture (described later) to the substrate. FIG. 1 is a schematic side view of a substrate processing apparatus according to one embodiment of the present invention. FIG. 2 is a schematic plan view showing the internal configuration of the substrate processing apparatus 1 of FIG. 1. FIG. 2 shows only some of the components of the substrate processing apparatus 1 of FIG. 1. As shown in FIG. 1, the substrate processing apparatus 1 includes a substrate holding device 20, a cup device 30, an exhaust unit 38, a drainage device 39, a chemical liquid supply unit 40, a first rinse liquid supply unit 50, a second rinse liquid supply unit 60, a gas supply unit 70, a nozzle movement device 150, and a control unit 200.

[0014] The substrate processing apparatus 1 further includes a chamber CH that houses the above-described components. The chamber CH has four side surfaces, a ceiling, and a bottom. One side surface of the chamber CH is formed with a transfer opening (not shown) for transferring substrates between the interior of the chamber CH and the exterior of the chamber CH. An FFU (filter fan unit) 10 is provided on the ceiling of the chamber CH. When the substrate processing apparatus 1 is powered on, the FFU 10 generates a downward current of clean air inside the chamber CH.

[0015] A substrate holding device 20 is provided in approximately the center of the bottom of the chamber CH. The substrate holding device 20 includes a substrate holding part 21 and a rotation drive part 22. The rotation drive part 22 is, for example, a motor, and is fixed to the bottom of the chamber CH. The rotation drive part 22 has a rotation shaft that extends upward. The substrate holding part 21 is connected to the upper end of the rotation shaft.

[0016] The substrate holding unit 21 is a so-called mechanical spin chuck that holds the outer peripheral edge of the substrate W. Specifically, the substrate holding unit 21 includes a disk-shaped spin base 21a and a plurality of rotary holding pins 21b provided on the upper peripheral edge of the spin base 21a. In the substrate holding unit 21, the lower peripheral edge and outer peripheral edge of the substrate W placed on the spin base 21a are held by the plurality of holding pins 21b. In this state, the rotation drive unit 22 operates to rotate the substrate W in a horizontal position. In FIG. 1 and certain subsequent figures, the substrate W is hatched to facilitate identification of the substrate W from the various components of the substrate processing apparatus 1.

[0017] In the substrate processing apparatus 1 according to this embodiment, various processing liquids are supplied to the upper surface of the substrate W that is held and rotated by the substrate holding device 20, and a mixed fluid, which will be described later, is sprayed onto the upper surface of the substrate W. When the various processing liquids are supplied to the substrate W and when the mixed fluid is sprayed, a cup device 30 and a drainage device 39 are used to discard the processing liquid that splashes from the rotating substrate W.

[0018] The cup device 30 includes an outer cup 30A, an inner cup 30B, and a cup drive unit 31. The outer cup 30A and the inner cup 30B each have a substantially cylindrical shape, surround the substrate holding unit 21 in a plan view (FIG. 2), and extend in the vertical direction. The inner diameter of the outer cup 30A is larger than the outer diameter of the inner cup 30B. As a result, the inner cup 30B is disposed inside the outer cup 30A. Furthermore, the outer cup 30A and the inner cup 30B are each provided to be movable in the vertical direction.

[0019] The cup driving unit 31 includes an actuator such as a motor or an air cylinder. The cup driving unit 31 moves each of the outer cup 30A and the inner cup 30B between a predetermined cup upper position and a cup lower position in accordance with the processing performed on the substrate W.

[0020] The cup upper position of each of the cups 30A, 30B is a height position (vertical position) where the upper end of the cup is above the substrate W held by the substrate holding part 21. As a result, each cup receives processing liquid splashed from the substrate W while in the cup upper position. On the other hand, the cup lower position of each of the cups 30A, 30B is a height position where the upper end of the cup is below the substrate W held by the substrate holding part 21. In this embodiment, the cup upper position of the outer cup 30A is the same as the cup upper position of the inner cup 30B. Furthermore, the cup lower position of the outer cup 30A is the same as the cup lower position of the inner cup 30B.

[0021] The drainage device 39 includes an outer container 39A and an inner container 39B corresponding to the outer cup 30A and the inner cup 30B, respectively. The outer container 39A and the inner container 39B each have an annular groove that opens upward. A drainage system 90 is connected to the bottom of the outer container 39A and the inner container 39B. The drainage system 90 includes fluid-related equipment such as piping and valves, and guides liquid collected by the outer container 39A and the inner container 39B to disposal facilities corresponding to the outer container 39A and the inner container 39B, respectively.

[0022] An exhaust unit 38 is provided at the bottom of the chamber CH so as to be located inside the cup device 30 in a plan view. An exhaust system 80 is connected to the exhaust unit 38. The exhaust system 80 includes fluid-related equipment such as piping and valves, and guides the atmosphere inside the cup device 30 through the exhaust unit 38 to the exhaust equipment of the factory. The exhaust equipment of the factory is configured to suck gas from the exhaust system 80.

[0023] The exhaust unit 38 may be attached to the lower part of at least one of the outer container 39A and the inner container 39B. Alternatively, the lower end of at least one of the outer container 39A and the inner container 39B may be configured as the exhaust unit 38.

[0024] Within chamber CH, chemical liquid nozzle 11 and rinse liquid nozzle 12 are provided at predetermined positions above substrate holding device 20 and cup device 30. Each of chemical liquid nozzle 11 and rinse liquid nozzle 12 is fixed on a support member (not shown) so that its outlet faces toward center WC (FIG. 2) of substrate W held by substrate holding part 21. At least a portion of the support member that supports chemical liquid nozzle 11 and rinse liquid nozzle 12 is made of a metal material such as stainless steel.

[0025] The chemical liquid supply unit 40 is connected to a chemical liquid supply source, and supplies an alkaline chemical liquid from the chemical liquid supply source to the chemical liquid nozzle 11 during cleaning processing of the substrate W. As a result, the chemical liquid is supplied to the upper surface of the substrate W held and rotated by the substrate holder 21. SC1 (a mixed solution of ammonia water and hydrogen peroxide water) is used as the chemical liquid. Note that in this embodiment, TMAH (tetramethylammonium hydroxide) or TMY (aqueous choline solution) can also be used as the chemical liquid instead of SC1. The timing of supplying the chemical liquid during cleaning processing will be described later.

[0026] The first rinse liquid supply unit 50 is connected to a rinse liquid supply source, and supplies rinse liquid from the rinse liquid supply source to the rinse liquid nozzle 12 during the cleaning process of the substrate W. As a result, the rinse liquid is supplied to the upper surface of the substrate W held and rotated by the substrate holder 21. DIW (deionized water) is used as the rinse liquid. In this embodiment, functional water such as carbonated water or ozone water can also be used as the rinse liquid. The timing of supplying the rinse liquid during the cleaning process will be described later.

[0027] In addition to the chemical liquid nozzle 11 and rinse liquid nozzle 12, a two-fluid nozzle 13 is provided in the chamber CH. The two-fluid nozzle 13 is supported in the chamber CH by a nozzle moving device 150. As shown in FIG. 2 , the nozzle moving device 150 includes a base 153, a support shaft 154, an arm 155, and a nozzle holder 156.

[0028] The base 153 is fixed to the bottom of the chamber CH so as to be located to the side of the outer cup 30A in a plan view. A support shaft 154 is provided so as to extend a certain distance upward from the base 153. An arm 155 extending horizontally is attached to the upper end of the support shaft 154. A nozzle holder 156 is attached to the tip of the arm 155. The two-fluid nozzle 13 is held by the nozzle holder 156. At least a portion of the base 153, the support shaft 154, the arm 155, and the nozzle holder 156 are made of a metal material such as stainless steel.

[0029] 1, the nozzle moving device 150 further includes a horizontal driving device 151 and a vertical driving device 152. Each of the horizontal driving device 151 and the vertical driving device 152 is built into, for example, a base portion 153 shown in FIG. 2, and includes an actuator such as a motor or an air cylinder.

[0030] The horizontal driving device 151 rotates the support shaft 154 around its own axis. The vertical driving device 152 moves the support shaft 154 in the vertical direction. This causes the two-fluid nozzle 13 to move between the processing space above the substrate W held by the substrate holder 21 and the standby space to the side of the substrate W (see the thick solid arrow in FIG. 2). The standby space is, for example, a space within a standby pod (not shown) provided to the side of the cup device 30 within the chamber CH.

[0031] The second rinse liquid supply unit 60 is connected to a rinse liquid supply source and supplies the rinse liquid from the rinse liquid supply source to the two-fluid nozzle 13 during cleaning processing of the substrate W. In addition, the gas supply unit 70 is connected to a gas supply source and supplies gas from the gas supply source to the two-fluid nozzle 13 during cleaning processing of the substrate W.

[0032] By simultaneously supplying the rinse liquid and the gas to the two-fluid nozzle 13, a mixed fluid containing fine droplets of the rinse liquid and the gas is generated in the two-fluid nozzle 13. The generated mixed fluid is then sprayed from the nozzle of the two-fluid nozzle 13.

[0033] In this embodiment, the rinse liquid supplied from the second rinse liquid supply unit 60 to the two-fluid nozzle 13 is the same as the rinse liquid supplied from the first rinse liquid supply unit 50 to the rinse liquid nozzle 12. Note that the rinse liquid supplied from the second rinse liquid supply unit 60 to the two-fluid nozzle 13 may be a rinse liquid different from the rinse liquid supplied from the first rinse liquid supply unit 50 to the rinse liquid nozzle 12.

[0034] In this embodiment, the gas supplied from the gas supply unit 70 to the two-fluid nozzle 13 is nitrogen gas. Note that, instead of nitrogen gas, an inert gas such as argon gas or helium gas can also be used as the gas supplied from the gas supply unit 70 to the two-fluid nozzle 13. The injection timing of the mixed fluid during the cleaning process will be described later.

[0035] The control unit 200 includes one or more circuit boards 211 and one or more wires 212 extending from each circuit board 211. As indicated by the two-dot chain line in Fig. 2, an electrical component arrangement space 300 is defined within the chamber CH, in which the one or more circuit boards 211 of the control unit 200 are collectively arranged.

[0036] 2. Control system of substrate processing apparatus 1 Fig. 3 is a block diagram showing the configuration of a control system of the substrate processing apparatus 1 of Fig. 1. As shown in Fig. 3, a control unit 200 includes a CPU (Central Processing Unit) 201, a RAM (Random Access Memory) 202, a ROM (Read Only Memory) 203, and a storage device 204. The CPU 201, RAM 202, ROM 203, and storage device 204 are mounted on one or more circuit boards 211 of Figs. 1 and 2.

[0037] 3 is used as a work area for the CPU 201. A system program is stored in the ROM 203. The storage device 204 includes a storage medium such as a hard disk or a semiconductor memory, and stores a substrate cleaning program for performing a cleaning process on the substrate W.

[0038] The substrate cleaning program may be provided in a state stored in a recording medium such as a CD-ROM 209, and may be installed in the ROM 203 or the storage device 204. Alternatively, the substrate cleaning program may be distributed from a server external to the substrate processing apparatus 1 via a communication network, and may be installed in the ROM 203 or the storage device 204.

[0039] The CPU 201 executes the substrate cleaning program to control the operation of each part of the substrate processing apparatus 1. Specifically, the control unit 200 controls the substrate holding device 20. As a result, the control unit 200 causes the substrate holding device 20 to hold the substrate W that is being carried into the substrate processing apparatus 1. The control unit 200 also causes the substrate holding device 20 to release the substrate W from its holding state in order to unload the substrate W from the substrate processing apparatus 1. Furthermore, the control unit 200 rotates the substrate W held by the substrate holding device 20 at a preset speed.

[0040] The control unit 200 also controls the cup device 30. As a result, the control unit 200 moves each of the outer cup 30A and the inner cup 30B in Fig. 1 between a cup upper position and a cup lower position.

[0041] The control unit 200 also controls the chemical liquid supply unit 40 to supply the chemical liquid to the chemical liquid nozzle 11. This causes the chemical liquid to be discharged from the chemical liquid nozzle 11. The control unit 200 also controls the first rinse liquid supply unit 50 to supply the rinse liquid to the rinse liquid nozzle 12. This causes the rinse liquid to be discharged from the rinse liquid nozzle 12.

[0042] Furthermore, the control unit 200 controls the second rinse liquid supply unit 60 and the gas supply unit 70 to supply the rinse liquid and the gas to the two-fluid nozzle 13. As a result, the mixed fluid is sprayed from the two-fluid nozzle 13.

[0043] Furthermore, the control unit 200 controls the horizontal driving device 151 and the vertical driving device 152 of the nozzle moving device 150 to move the two-fluid nozzle 13 within the chamber CH.

[0044] 3. Cleaning process by substrate processing apparatus 1 Fig. 4 is a flowchart showing a series of steps in a cleaning process performed by the substrate processing apparatus 1 of Fig. 1. Figs. 5 to 7 are schematic side views for explaining the operation of the substrate processing apparatus 1 according to the flowchart of Fig. 4. In the schematic side views of Figs. 5 to 7, some of the components shown in Fig. 1 are omitted to make it easier to understand the state of the fluid supplied or sprayed onto the upper surface of the substrate W.

[0045] The operation of each component of the substrate processing apparatus 1 described below is controlled by a control unit 200 shown in Figures 1 to 3. The cleaning process by the substrate processing apparatus 1 starts when a substrate W is loaded into the substrate processing apparatus 1 and placed on the substrate holder 21 shown in Figure 1.

[0046] When the substrate W is placed on the substrate holder 21, the substrate W is held in a horizontal position by the plurality of holding pins 21b, and rotation of the held substrate W is started (step S11). The rotation of the substrate W by the substrate holder 20 continues from the start of rotation in step S11 until the rotation of the substrate W is stopped in step S17, which will be described later.

[0047] Next, a liquid film of chemical liquid is formed on the upper surface of the rotating substrate W (step S12). Specifically, the chemical liquid is supplied at a predetermined flow rate from the chemical liquid supply unit 40 in FIG. 1 to the chemical liquid nozzle 11. In this case, as shown in FIG. 5, the chemical liquid L1 is ejected from the chemical liquid nozzle 11 toward the center WC of the rotating substrate W. As a result, a liquid film of the chemical liquid L1 spreads over the entire upper surface of the substrate W. At this time, the chemical liquid L1 splashes from the rotating substrate W. In order to catch the splashed chemical liquid L1, the outer cup 30A is set to the cup-up position, and the inner cup 30B is set to the cup-down position just before the formation of the liquid film of the chemical liquid L1. As a result, the chemical liquid L1 caught by the outer cup 30A is discarded through the outer container 39A and the drainage system 90 in FIG. 1. In this way, the chemical liquid L1 splashed from the substrate W is collected by the outer cup 30A. This reduces the floating of droplets of the chemical liquid L1 around the substrate W.

[0048] Here, a downward air current is formed inside the chamber CH by the FFU 10 in Fig. 1. Furthermore, most of the atmosphere inside the cup device 30 is exhausted to the outside of the chamber CH through the exhaust unit 38 and the exhaust system 80 in Fig. 1. Therefore, even if an atmosphere containing components of the chemical liquid L1 is generated around the substrate W, most of the atmosphere is exhausted to the outside of the chamber CH without diffusing within the chamber CH.

[0049] In the following description, the time during which the chemical liquid L1 is continuously supplied from the chemical liquid nozzle 11 to the substrate W in step S12 is referred to as the chemical liquid time. When the chemical liquid time has elapsed from the start of step S12, the discharge of the chemical liquid L1 from the chemical liquid nozzle 11 to the substrate W is stopped.

[0050] Next, a liquid film of a rinse liquid is formed on the upper surface of the rotating substrate W (step S13). Specifically, the rinse liquid is supplied at a predetermined flow rate from the first rinse liquid supply unit 50 in Fig. 1 to the rinse liquid nozzle 12. In this case, as shown in Fig. 6, the rinse liquid L2 is discharged from the rinse liquid nozzle 12 toward the center WC of the rotating substrate W. As a result, the liquid film of the rinse liquid L2 spreads over the entire upper surface of the substrate W, and at least a portion of the liquid film of the chemical liquid L1 remaining on the substrate W is replaced with the rinse liquid L2.

[0051] At this time, mainly the rinse liquid L2 splashes from the rotating substrate W. In order to catch the splashed rinse liquid L2, the inner cup 30B is set to the cup upper position together with the outer cup 30A immediately before a liquid film of the rinse liquid L2 is formed. As a result, the rinse liquid L2 caught by the inner cup 30B is discarded through the inner container 39B and the drainage system 90 in FIG. 1. In this way, the rinse liquid L2 splashed from the substrate W is collected by the inner cup 30B, reducing the floating of droplets of the rinse liquid L2 around the substrate W. Even when the rinse liquid L2 is supplied to the substrate W, a downward air current is formed in the chamber CH. Furthermore, most of the atmosphere inside the cup device 30 is exhausted to the outside of the chamber CH through the exhaust unit 38.

[0052] In the following description, the time during which the rinse liquid L2 is continuously supplied from the rinse liquid nozzle 12 to the substrate W in step S13 is referred to as the rinse liquid time. When the rinse liquid time has elapsed from the start of step S13, the discharge of the rinse liquid L2 from the rinse liquid nozzle 12 to the substrate W is stopped.

[0053] Next, physical cleaning with the fluid mixture is performed on the upper surface of the rotating substrate W (step S14). Specifically, the two-fluid nozzle 13 of Fig. 1 is moved from the standby space beside the substrate W to the processing space PS above the substrate W. Furthermore, as shown in Fig. 7, the nozzle of the two-fluid nozzle 13 is directed toward the upper surface of the substrate W. Furthermore, the height position of the two-fluid nozzle 13 is adjusted so that a gap of a predetermined size is formed between the two-fluid nozzle 13 and the substrate W.

[0054] 1 is supplied to the two-fluid nozzle 13 at a predetermined flow rate, and gas is supplied to the two-fluid nozzle 13 at a predetermined flow rate from the gas supply unit 70 of Fig. 1. In this case, a mixed fluid containing fine droplets of the rinse liquid L2 and gas is sprayed from the spray port of the two-fluid nozzle 13 toward the top surface of the substrate W.

[0055] 7, the two-fluid nozzle 13 is further moved in the processing space PS from a position above the center WC of the substrate W to a position above the outer circumferential edge of the substrate W. As a result, the mixed fluid sprayed from the two-fluid nozzle 13 sequentially collides with multiple portions of the upper surface of the substrate W, and physical cleaning of the entire upper surface of the substrate W is performed.

[0056] After the entire upper surface of the substrate W has been physically cleaned, the supply of the rinse liquid L2 and gas to the two-fluid nozzle 13 is stopped, and the two-fluid nozzle 13 is moved from the processing space PS to a standby space beside the substrate W.

[0057] Even during physical cleaning of the substrate W with the fluid mixture, mainly the rinse liquid L2 splashes from the rotating substrate W. In order to catch the splashed rinse liquid L2, the inner cup 30B and the outer cup 30A are held in the cup-up position, thereby reducing the floating of droplets of the rinse liquid L2 around the substrate W.

[0058] Here, during operation of the two-fluid nozzle 13 moving from the standby space to the processing space PS, a liquid film of the rinsing liquid L2 is formed on the upper surface of the substrate W. Therefore, even if contaminants or liquid adhering to the two-fluid nozzle 13 fall from the moving two-fluid nozzle 13, the upper surface of the substrate W is protected by the liquid film of the rinsing liquid L2.

[0059] In order to shorten the time from when the liquid film of the rinsing liquid L2 is formed to when the mixed fluid is supplied to the substrate W, the time it takes for the two-fluid nozzle 13 to move from the waiting space to the processing space PS may partially overlap with the time it takes for the rinsing liquid L2 to be ejected in step S13 (rinsing liquid time).

[0060] Next, a liquid film of the rinsing liquid L2 is again formed on the upper surface of the rotating substrate W (step S15). The operation of the substrate processing apparatus 1 in step S15 is basically the same as the operation of the substrate processing apparatus 1 in step S13. Therefore, as shown in the example of FIG. 6, the rinsing liquid L2 is discharged from the rinsing liquid nozzle 12 toward the center WC of the rotating substrate W. Furthermore, the inner cup 30B and the outer cup 30A are held at the cup-over position.

[0061] As a result, particles that have been peeled off from the upper surface of the substrate W by the physical cleaning in step S14 are washed away by the liquid film formed on the upper surface of the substrate W. The discharge of the rinsing liquid L2 in step S15 is continued for a predetermined time and then stopped.

[0062] Next, spin drying of the substrate W is performed (step S16). Specifically, the rotation speed of the substrate W is increased in a state in which the chemical liquid L1 and the rinse liquid L2 are not supplied to the substrate W and the mixed fluid is not sprayed onto the substrate W, and the liquid adhering to the substrate W is shaken off. Finally, the rotation of the substrate W is stopped, and the substrate W is released from the holding state by the multiple holding pins 21b (step S17).

[0063] Thereafter, the substrate W placed on the substrate holder 21 is unloaded from the substrate processing apparatus 1. This completes the cleaning process for the substrate W by the substrate processing apparatus 1.

[0064] 4. Effect of cleaning process by substrate processing apparatus 1 The effect of the cleaning process in Fig. 4 will be described. In the above cleaning process, a liquid film of chemical liquid L1 is formed on the upper surface of the substrate W in the process of step S12. Here, chemical liquid L1 is an alkaline chemical liquid. When the alkaline chemical liquid L1 comes into contact with the upper surface of the substrate W, the zeta potential of the upper surface of the substrate W and of particles present on the upper surface of the substrate W is adjusted. Specifically, the polarity of the zeta potential of the upper surface of the substrate W covered with the alkaline chemical liquid L1 is made the same as the polarity of the zeta potential of the particles present on the upper surface of the substrate W. This makes it easier for particles present on the upper surface of the substrate W to peel off from the upper surface.

[0065] Next, in the process of step S13, the chemical liquid L1 on the substrate W is replaced with the rinse liquid L2, and a liquid film of the rinse liquid L2 is formed in place of the liquid film of the chemical liquid L1 on the upper surface of the substrate W. Thereafter, in the process of step S14, the mixed fluid is sprayed from the two-fluid nozzle 13 onto the upper surface of the substrate W on which the liquid film of the rinse liquid L2 has been formed.

[0066] According to the findings of the present inventors based on the first detergency test described below, the zeta potential state of the upper surface of the substrate W and of the particles present on the upper surface of the substrate W adjusted in the process of step S12 is maintained to some extent even during the process of step S13. As a result, when the mixed fluid sprayed from the two-fluid nozzle 13 collides with the upper surface of the substrate W, the particles present on the upper surface of the substrate W are efficiently and physically removed.

[0067] Furthermore, according to the above-described cleaning process, when the mixed fluid collides with the upper surface of the substrate W, the chemical liquid L1 is basically not present on the upper surface of the substrate W. Therefore, when the mixed fluid collides with the substrate W, the chemical liquid components are not contained in fine droplets scattered from the collision area between the mixed fluid and the substrate W. Therefore, the atmosphere containing the chemical liquid components is prevented from diffusing within the space surrounding the substrate W.

[0068] This prevents components provided in chamber CH from being exposed to the chemical atmosphere. Specifically, the support members of chemical nozzle 11 and rinse liquid nozzle 12 are prevented from being exposed to the chemical atmosphere. Also, base 153, support shaft 154, arm 155, and nozzle holder 156 of nozzle moving device 150 are prevented from being exposed to the chemical atmosphere. Furthermore, one or more circuit boards 211 and one or more wirings 212 arranged in electrical component arrangement space 300 are prevented from being exposed to the chemical atmosphere. Therefore, the lifespan of each component constituting substrate processing apparatus 1 is prevented from being shortened.

[0069] As a result, the substrate processing apparatus 1 is realized which can improve the cleanliness of the substrate after cleaning while suppressing an increase in the frequency of maintenance such as part replacement.

[0070] 4, during the cleaning process of the substrate W, it is preferable that a rinse liquid be supplied to the upper surface of the substrate W so that the entire liquid film of the chemical liquid L1 remaining on the substrate W is replaced with the rinse liquid L2. In this case, droplets containing chemical liquid components are not generated during the subsequent physical cleaning of the substrate W with the mixed fluid.

[0071] Furthermore, as described above, in the substrate processing apparatus 1 according to this embodiment, diffusion of the atmosphere containing chemical components inside the chamber CH is reduced. In this case, it is not necessary to provide a structure or process for imparting chemical resistance to the members containing metal materials provided inside the chamber CH. Therefore, a low-cost and highly versatile substrate processing apparatus 1 is realized.

[0072] 5. First cleaning power test In the following description, supplying chemical liquid L1 onto substrate W to form a liquid film of chemical liquid L1 is referred to as simple chemical liquid processing. Simple chemical liquid processing corresponds to the processing of step S12 in FIG. 4. Supplying rinse liquid L2 onto substrate W to form a liquid film of rinse liquid L2 is referred to as simple rinse processing. Simple rinse processing corresponds to the processing of step S13 in FIG. 4. Spraying a mixed fluid containing fine droplets of chemical liquid L1 and gas onto substrate W is referred to as physical chemical liquid processing. Spraying a mixed fluid containing fine droplets of rinse liquid L2 and gas onto substrate W is referred to as physical rinse processing. Physical rinse processing corresponds to the processing of step S14 in FIG. 4.

[0073] The inventors conducted the first detergency test mainly to confirm the following two points. One of the two points is to determine the extent of difference between the detergency obtained by performing a simple chemical treatment and a physical rinse treatment in this order and the detergency obtained by a physical chemical treatment. The other of the two points is to determine the extent to which the detergency obtained by performing a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment in this order changes depending on the duration of the simple rinse treatment. The duration of the simple rinse treatment corresponds to the above-mentioned rinse time.

[0074] The first cleaning power test will now be described. First, the inventors prepared seven sample substrates W each having a predetermined amount of contaminants attached to its upper surface. In the following description, in order to distinguish between the seven sample substrates W used in the first cleaning power test, the seven substrates W will be referred to as Sample 1, Sample 2, Sample 3, Sample 4, Sample 5, Sample 6, and Sample 7, respectively.

[0075] Next, the inventors performed a simple chemical treatment on the upper surface of Sample 1 for 120 seconds while rotating Sample 1 using the substrate holding device 20 shown in Fig. 1. The time for the simple chemical treatment corresponds to the above-mentioned chemical treatment time. In the first detergency test, SC1 was used as the chemical.

[0076] Next, the inventors performed a simple chemical treatment on the upper surface of Sample 2 for 3 seconds while rotating Sample 2 using the substrate holding device 20 shown in FIG. 1. Subsequently, the inventors performed a simple rinse treatment on the upper surface of Sample 2 for 10 seconds. After that, the inventors performed a physical rinse treatment on the upper surface of Sample 2 for 18 seconds. In the first detergency test, DIW was used as the rinse liquid.

[0077] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 3, similar to the example of Sample 2, except that the time for the simple rinse treatment (rinse liquid time) was 5 seconds.

[0078] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 4, similar to the example of Sample 2, except that the time for the simple rinse treatment (rinse liquid time) was 3 seconds.

[0079] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 5, similar to the example of Sample 2, except that the time for the simple rinse treatment (rinse liquid time) was 1 second.

[0080] Next, the inventors performed a simple chemical solution treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 6 in the same manner as in the example of Sample 2, except that the time for the simple rinse treatment (rinse solution time) was set to 0 seconds. That is, Sample 6 was subjected to only the simple chemical solution treatment and the physical rinse treatment in this order.

[0081] Next, the inventors performed a physical chemical treatment on the upper surface of the sample 7 for 18 seconds while rotating the sample 7 using the substrate holding device 20 shown in FIG.

[0082] Next, the inventors measured the contamination removal rates of Samples 1 to 7 to evaluate the cleaning power obtained by each cleaning process for Samples 1 to 7. The contamination removal rate for a single substrate W is an evaluation value that indicates the degree to which the single substrate W has become cleaner after cleaning from the contaminated state before cleaning. The higher the measured removal rate, the higher the cleaning power of the single substrate W due to the cleaning process performed on the single substrate W, and the higher the cleanliness of the single substrate W after cleaning. This measurement can be performed using a particle counter.

[0083] FIG. 8 shows the results of the first detergency test. In FIG. 8, the contamination removal rates of Samples 1 to 7 after cleaning in the first detergency test are shown in a bar graph. In the bar graph of FIG. 8, the items of Samples 1 to 7 are assigned to the horizontal axis. The vertical axis of the bar graph of FIG. 8 represents the contamination removal rate of each sample.

[0084] 8, legends for Samples 1 to 7 are shown below the bar graphs. In these legends, the simple chemical treatment is labeled "chemical," the simple rinse treatment is labeled "rinse solution," the physical rinse treatment is labeled "physical rinse," and the physical chemical treatment is labeled "physical chemical."

[0085] As shown in Figure 8, in the first detergency test, the contamination removal rates of Sample 1, Sample 2, Sample 3, Sample 4, Sample 5, Sample 6 and Sample 7 were 7%, 82%, 84%, 84%, 97% and 99.3%, respectively.

[0086] According to the results of the first cleaning power test, the contamination removal rate of Sample 1, which was not subjected to physical cleaning with the mixed fluid, was significantly lower than the contamination removal rates of Samples 2 to 7, which were subjected to physical cleaning. This shows that simple chemical treatment alone is unable to remove most of the particles on the substrate W.

[0087] Furthermore, according to the results of the first detergency test, the contamination removal rate of Sample 6, which was subjected to a simple chemical treatment and a physical rinse treatment in that order, and the contamination removal rate of Sample 7, which was subjected to a physical chemical treatment, were both extremely high. This indicates that there is almost no difference in the detergency obtained by performing a simple chemical treatment and a physical rinse treatment in this order and the detergency obtained by a physical chemical treatment. It was also found that extremely high detergency can be obtained by a cleaning treatment that combines a simple chemical treatment and a physical rinse treatment, and a cleaning treatment that uses a physical chemical treatment.

[0088] Furthermore, according to the results of the first cleaning power test, the contamination removal rates of Samples 2 to 5, which were subjected to the simple chemical treatment, simple rinse treatment, and physical rinse treatment in that order, were approximately 13% lower than the contamination removal rate of Sample 6. However, the contamination removal rates of Samples 2 to 5 were maintained at a level higher than 80% regardless of the length of the rinse time. This suggests that the zeta potential state of the upper surface of the substrate W and of the particles present on the upper surface of the substrate W, which was adjusted by the simple chemical treatment, is maintained to some extent even when a simple rinse treatment is performed immediately after the simple chemical treatment.

[0089] This shows that a cleaning process that involves a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment in this order can provide relatively high cleaning power even if the rinse time varies within a range of 1 second to 10 seconds.

[0090] 6. Second cleaning power test The inventors conducted the second detergency test primarily to confirm the following two points. One of the two points is to determine the extent of the difference between the detergency obtained by performing a physical rinse treatment without performing a simple chemical treatment and the detergency obtained by performing a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment in this order. The other of the two points is to determine the extent to which the detergency obtained by performing a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment in this order changes depending on the duration of the simple chemical treatment. The duration of the simple chemical treatment corresponds to the above-mentioned chemical treatment time.

[0091] The second cleaning power test will now be described. First, the inventors prepared eight sample substrates W each having a predetermined amount of contaminants attached to its upper surface. In the following description, in order to distinguish between the eight sample substrates W used in the second cleaning power test, the eight substrates W will be referred to as Sample 11, Sample 12, Sample 13, Sample 14, Sample 15, Sample 16, Sample 17, and Sample 18.

[0092] Next, the inventors performed a physical rinse treatment on the upper surface of the sample 11 for 18 seconds while rotating the sample 11 using the substrate holding device 20 shown in Fig. 1. In the second detergency test, DIW was used as the rinse liquid.

[0093] Next, the inventors performed a simple rinse process on the upper surface of sample 12 for 10 seconds while rotating sample 12 using the substrate holding device 20 shown in Figure 1. The time for the simple rinse process corresponds to the rinse time described above. Thereafter, the inventors performed a physical rinse process on the upper surface of sample 12 for 18 seconds.

[0094] Next, the inventors performed a simple chemical treatment on the upper surface of sample 13 for 1 second while rotating sample 13 using substrate holding device 20 of FIG. 1. Subsequently, the inventors performed a simple rinse treatment on the upper surface of sample 13 for 10 seconds. After that, the inventors performed a physical rinse treatment on the upper surface of sample 13 for 18 seconds. In the second detergency test, SC1 was used as the chemical treatment.

[0095] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 14, similar to the example of Sample 13, except that the time for the simple chemical treatment (chemical time) was 3 seconds.

[0096] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 15, similar to the example of Sample 13, except that the time for the simple chemical treatment (chemical time) was 5 seconds.

[0097] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 16, similar to the example of Sample 13, except that the time for the simple chemical treatment (chemical time) was 10 seconds.

[0098] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 17, similar to the example of Sample 13, except that the time for the simple chemical treatment (chemical time) was 30 seconds.

[0099] Next, the inventors performed a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the upper surface of Sample 18, similar to the example of Sample 13, except that the time for the simple chemical treatment (chemical time) was 120 seconds.

[0100] Next, in order to evaluate the detergency obtained by the cleaning treatment of each of Samples 11 to 18, the inventors measured the stain removal rate of Samples 11 to 18 in the same manner as in the first example of detergency test.

[0101] FIG. 9 shows the results of the second detergency test. In FIG. 9, the stain removal rates of Samples 11 to 18 after cleaning in the second detergency test are shown in a bar graph. In the bar graph of FIG. 9, the items of Samples 11 to 18 are assigned to the horizontal axis. The vertical axis of the bar graph of FIG. 9 represents the stain removal rate of each sample.

[0102] 9, legends for Samples 11 to 18 are shown below the bar graphs. In these legends, the simple chemical treatment is indicated as "chemical solution," the simple rinse treatment is indicated as "rinse solution," and the physical rinse treatment is indicated as "physical rinse."

[0103] As shown in Figure 9, in the second detergency test, the stain removal rates of Sample 11, Sample 12, Sample 13, Sample 14, Sample 15, Sample 16, Sample 17 and Sample 18 were 10%, 10%, 77%, 82%, 84%, 87%, 91% and 92%, respectively.

[0104] According to the results of the second cleaning power test, the contamination removal rates of Samples 11 and 12, which were not subjected to simple chemical treatment, were significantly lower than the contamination removal rates of Samples 13 to 18, which were subjected to simple chemical treatment, simple rinse treatment, and physical rinse treatment in that order. Specifically, the contamination removal rates of Samples 11 and 12 were 65% or more lower than the contamination removal rates of Samples 13 to 18. This shows that particles on the substrate W can hardly be removed by only performing a simple rinse treatment and a physical rinse treatment without performing a simple chemical treatment.

[0105] Furthermore, according to the results of the second detergency test, the contamination removal rate of Samples 13 to 18, which were subjected to simple chemical treatment, simple rinse treatment, and physical rinse treatment in this order, gradually increased from 77% to 92% as the chemical treatment time increased. In other words, the contamination removal rate of Samples 13 to 18 was maintained at a level of 77% or higher regardless of the length of chemical treatment time. This shows that a cleaning process that performs simple chemical treatment, simple rinse treatment, and physical rinse treatment in this order can achieve relatively high detergency even when the chemical treatment time varies within the range of 1 second to 120 seconds.

[0106] 7. Chemical atmosphere evaluation test The present inventors conducted a chemical atmosphere evaluation test to understand the relationship between the content of the cleaning process of the substrate W and the diffusion state of the atmosphere containing the chemical liquid in the chamber CH. The chemical atmosphere evaluation test will be described below. Fig. 10 is a schematic perspective view for explaining the content of the chemical atmosphere evaluation test.

[0107] First, the inventors prepared multiple substrates W for use as samples. Furthermore, the inventors designated one of the multiple sample substrates W as sample 21, and while rotating sample 21 using the substrate holding device 20 of FIG. 1, performed a simple chemical treatment on the upper surface of sample 21 for 10 seconds. Next, the inventors performed a simple rinse treatment on the upper surface of sample 21 for 10 seconds. Thereafter, the inventors performed a physical rinse treatment on the upper surface of sample 21 for 18 seconds. In the chemical atmosphere evaluation test, SC1 was used as the chemical liquid, and DIW was used as the rinse liquid.

[0108] As described above, SC1 is a mixed solution of ammonia water and hydrogen peroxide water, and therefore, when the atmosphere containing the chemical solution in chamber CH is widely diffused, it means that the atmosphere having a high ammonia concentration leaks out into the space above cup device 30 in chamber CH.

[0109] Therefore, during the cleaning process of sample 21, the inventors positioned the tip of gas collection pipe 98 connected to concentration detector 99 near the upper end of cup device 30, as shown in the schematic perspective view of Fig. 10. In this state, the inventors used concentration detector 99 to measure the ammonia concentration in the atmosphere in a space several centimeters above cup device 30. As a result, the measured ammonia concentration was 0.0 ppm.

[0110] 1 varies depending on the operating state of the exhaust equipment in the factory. Therefore, in this chemical liquid atmosphere evaluation test, the amount of exhaust air from the atmosphere inside the cup device 30 by the exhaust unit 38 and exhaust system 80 was maintained at the lowest possible exhaust amount when the exhaust equipment in the factory was in operation. Specifically, in this chemical liquid atmosphere evaluation test, the speed (wind speed) of the gas flowing from inside the cup device 30 to the exhaust unit 38 was set to approximately 3.7 m / s.

[0111] The inventors considered the possibility that the atmosphere containing the chemical liquid in the chamber CH may gradually leak out of the cup device 30 when the cleaning process of the sample 21 is repeatedly performed in the substrate processing apparatus 1, and designated the other two substrates W of the multiple sample substrates W as new samples 21. Then, the inventors sequentially performed the same cleaning process as the first sample 21 on the two samples 21. Furthermore, the inventors measured the ammonia concentration in the atmosphere above the cup device 30 during each cleaning process. As a result, the ammonia concentrations measured during the cleaning processes of the second and third samples 21 were both 0.0 ppm.

[0112] Next, the inventors selected yet another substrate W from the multiple sample substrates W as sample 22, and performed a simple chemical solution treatment on the upper surface of sample 22 for 10 seconds while rotating sample 22 using the substrate holding device 20 of Fig. 1. Subsequently, the inventors performed a physical rinse treatment on the upper surface of sample 22 for 18 seconds.

[0113] Furthermore, the inventors measured the ammonia concentration in the atmosphere in the space several centimeters above the cup device 30 during the cleaning process of the sample 22. As a result, the measured ammonia concentration was 3.0 ppm.

[0114] The inventors considered the possibility that the ammonia concentration in the atmosphere in the chamber CH may gradually increase when the cleaning process of the sample 22 is repeatedly performed in the substrate processing apparatus 1, and therefore selected two more substrates W from the plurality of sample substrates W as new samples 22. The inventors then sequentially subjected the two samples 22 to the same cleaning process as the first sample 22. Furthermore, the inventors measured the ammonia concentration in the atmosphere above the cup device 30 during each cleaning process. As a result, the ammonia concentration measured during the cleaning process of the second sample 22 was 3.5 ppm. Furthermore, the ammonia concentration measured during the cleaning process of the third sample 22 was 2.5 ppm.

[0115] Next, the inventors selected another substrate W from the multiple substrates W for samples as sample 23, and while rotating sample 23 using the substrate holding device 20 of Figure 1, performed a physical chemical treatment on the upper surface of sample 23 for 18 seconds.

[0116] Furthermore, during the cleaning process of sample 23, the inventors used concentration detector 99 to measure the ammonia concentration in the atmosphere in the space several centimeters above cup device 30. As a result, the measured ammonia concentration was 16.5 ppm.

[0117] Considering the possibility that the ammonia concentration in the atmosphere in the chamber CH may gradually increase when the cleaning process of the sample 23 is repeatedly performed in the substrate processing apparatus 1, the inventors designated three more substrates W of the multiple sample substrates W as new samples 23. The inventors then sequentially subjected the three samples 23 to the same cleaning process as the first sample 23. Furthermore, the inventors measured the ammonia concentration in the atmosphere above the cup device 30 during each cleaning process. As a result, the ammonia concentration measured during the cleaning process of the second sample 23 was 20.0 ppm. The ammonia concentration measured during the cleaning process of the third sample 23 was 23.0 ppm. The ammonia concentration measured during the cleaning process of the fourth sample 23 was 26.0 ppm.

[0118] FIG. 11 shows the results of the chemical atmosphere evaluation test. In FIG. 11, the results of the chemical atmosphere evaluation test are shown in a table. In the table of FIG. 11, the simple chemical treatment is indicated as "chemical," and the simple rinse treatment is indicated as "rinse solution." Furthermore, the physical rinse treatment is indicated as "physical rinse," and the physical chemical treatment is indicated as "physical chemical."

[0119] As described above, it was found that the cleaning process for sample 21 did not result in the diffusion of an atmosphere containing a chemical solution into the space above the cup device 30, no matter how many times the cleaning process was repeated. On the other hand, the cleaning process for sample 22 resulted in the diffusion of an atmosphere containing a small amount of chemical solution above the cup device 30. On the other hand, the cleaning process for sample 23 resulted in the diffusion of an atmosphere containing a large amount of chemical solution above the cup device 30. Furthermore, it was found that the cleaning process for sample 23 resulted in a cumulative increase in the ammonia concentration in the atmosphere in chamber CH as the cleaning process was repeated.

[0120] As a result of the above chemical atmosphere evaluation test, the inventors have discovered that in order to prevent the atmosphere containing the chemical from spreading widely within the chamber CH, it is necessary to perform a simple chemical treatment, a simple rinse treatment, and a physical rinse treatment on the substrate W in this order.

[0121] Furthermore, the present inventors have found, mainly from the results of the second cleaning power test, that the chemical treatment time for the simple chemical treatment is preferably 1 second or more and 30 seconds or less. It is believed that a chemical treatment time of 1 second or more satisfactorily adjusts the zeta potential of the upper surface of the substrate W and particles present on the upper surface of the substrate W. Furthermore, a chemical treatment time of 30 seconds or less suppresses a decrease in throughput due to the long time required for the simple chemical treatment.

[0122] Furthermore, the inventors have found, mainly from the results of the first cleaning power test, that the rinse liquid time in the simple rinse process is preferably 1 second or more and 10 seconds or less. It is believed that a rinse liquid time of 1 second or more allows the liquid film of the chemical liquid L1 formed on the upper surface of the substrate W to be sufficiently replaced with the rinse liquid L2. Furthermore, a rinse liquid time of 10 seconds or less prevents a decrease in throughput due to the long time required for the simple rinse process.

[0123] 8. Other Embodiments (a) In the substrate processing apparatus 1 according to the above embodiment, as shown in the example of FIG. 4, after a process of forming a liquid film of chemical liquid L1 on the upper surface of the substrate W (process of step S12), a process of forming a liquid film of rinse liquid L2 on the upper surface of the substrate W (process of step S13) is performed, but the present invention is not limited to this.

[0124] The process of forming a liquid film of the chemical liquid L1 on the upper surface of the substrate W and the process of forming a liquid film of the rinse liquid L2 on the upper surface of the substrate W may be performed partially overlapping each other. For example, the process of forming a liquid film of the rinse liquid L2 on the upper surface of the substrate W may be started before the process of forming a liquid film of the chemical liquid L1 on the upper surface of the substrate W is completely completed.

[0125] (b) In the substrate processing apparatus 1 according to the above embodiment, as shown in the example of FIG. 4, after the process of forming a liquid film of rinsing liquid L2 on the upper surface of the substrate W (the process of step S13), the process of physically cleaning the upper surface of the substrate W with a mixed fluid (the process of step S14) is performed, but the present invention is not limited to this.

[0126] The process of forming a liquid film of the rinsing liquid L2 on the upper surface of the substrate W and the process of physically cleaning the upper surface of the substrate W with the fluid mixture may be performed in a partially overlapping manner. For example, the physical cleaning process with the fluid mixture may be started before the process of forming a liquid film of the rinsing liquid L2 on the upper surface of the substrate W is completely completed.

[0127] (c) In the substrate processing apparatus 1 according to the above embodiment, a configuration for supplying a rinse liquid to the rinse liquid nozzle 12 (first rinse liquid supply unit 50) and a configuration for supplying a rinse liquid to the two-fluid nozzle 13 (second rinse liquid supply unit 60) are provided separately, but the present invention is not limited to this. Instead of providing the above two configurations, a single rinse liquid supply unit may be provided that supplies a rinse liquid to the rinse liquid nozzle 12 and also supplies a rinse liquid to the two-fluid nozzle 13. For example, the first rinse liquid supply unit 50 may be configured to be able to supply a rinse liquid to both the rinse liquid nozzle 12 and the two-fluid nozzle 13.

[0128] 9. Correspondence between each part of the embodiment and each element of the claims The following describes examples of correspondence between the elements of the claims and the elements of the embodiments. Various other elements having the configurations or functions described in the claims may also be used as the elements of the claims.

[0129] In the above-described embodiment, the substrate processing apparatus 1 is an example of a substrate processing apparatus, the substrate holding unit 21 is an example of a substrate holding unit, the chemical liquid nozzle 11 is an example of a first liquid nozzle, the rinse liquid nozzle 12 is an example of a second liquid nozzle, the two-fluid nozzle 13 is an example of a two-fluid nozzle, the chemical liquid supply unit 40 is an example of a chemical liquid supply unit, and the first rinse liquid supply unit 50 and the second rinse liquid supply unit 60 are examples of rinse liquid supply units.

[0130] Furthermore, the gas supply unit 70 is an example of a gas supply unit, the control unit 200 is an example of a control unit, the outer cup 30A and the inner cup 30B are examples of cups, the chamber CH is an example of a housing, the FFU 10 is an example of an airflow forming unit, the exhaust unit 38 is an example of an exhaust unit, one or more circuit boards 211 are examples of one or more electrical elements, and one or more wirings 212 are examples of one or more wirings.

[0131] In addition, at least a portion of the support member that supports the chemical liquid nozzle 11 and the rinse liquid nozzle 12, and at least a portion of the base portion 153, the support shaft 154, the arm 155, and the nozzle holder 156 of the nozzle moving device 150 are examples of one or more support members, and the rotational drive unit 22 is an example of a rotational drive unit.

[0132] Furthermore, the process of step S12 in FIG. 4 (simple chemical process) is an example of the first control and the first step, the process of step S13 in FIG. 4 (simple rinse process) is an example of the second control and the second step, and the process of step S14 in FIG. 4 (physical rinse process) is an example of the third control and the third step.

[0133] 10. Summary of the embodiment (Item 1) The substrate processing apparatus according to item 1 comprises: A substrate processing apparatus for processing a substrate, a substrate holder for holding the substrate; a first liquid nozzle that discharges a chemical solution onto the substrate; a second liquid nozzle that discharges a rinse liquid onto the substrate; a two-fluid nozzle that sprays a mixed fluid containing a gas and the rinse liquid onto the substrate; a chemical liquid supply unit that supplies the chemical liquid to the first liquid nozzle; a rinse liquid supply unit that supplies the rinse liquid to the second liquid nozzle and the two-fluid nozzle; a gas supply unit that supplies the gas to the two-fluid nozzle; a control unit; The control unit a first control for discharging the chemical liquid from the first liquid nozzle onto the substrate by controlling the chemical liquid supply unit while the substrate is held by the substrate holding unit, thereby forming a liquid film of the chemical liquid on the substrate; a second control for controlling the rinse liquid supply unit to discharge the rinse liquid from the second liquid nozzle onto the substrate, and for forming a liquid film of the rinse liquid on the substrate by replacing at least a part of the liquid film of the chemical liquid formed on the substrate by the first control with the rinse liquid; and third control for spraying the mixed fluid from the two-fluid nozzle onto the substrate by controlling the rinse liquid supply unit and the gas supply unit.

[0134] In the substrate processing apparatus, a liquid film of a chemical solution is formed on one surface of a substrate by a first control, and the zeta potential of the one surface of the substrate and of particles present on the one surface of the substrate is adjusted so that particles present on the one surface of the substrate are easily peeled off from the one surface by contacting the alkaline chemical solution with the one surface of the substrate.

[0135] Next, by the second control, at least a portion of the chemical liquid on the substrate is replaced with the rinse liquid, and a liquid film of the rinse liquid is formed on one surface of the substrate in place of the liquid film of the chemical liquid. Thereafter, the mixed fluid is sprayed from the two-fluid nozzle onto the one surface of the substrate on which the liquid film of the rinse liquid has been formed.

[0136] According to the findings of the present inventors, the zeta potentials of the one surface of the substrate and the particles adjusted in the first control are maintained during the second control, so that when the mixed fluid sprayed from the two-fluid nozzle collides with the one surface of the substrate, the particles present on the one surface of the substrate are efficiently and physically removed.

[0137] Furthermore, when the mixed fluid collides with one surface of the substrate, no chemical solution is present on that surface. Therefore, when the mixed fluid collides with the substrate, the fine droplets scattered from the collision point between the mixed fluid and the substrate do not contain chemical solution components. This prevents the atmosphere containing the chemical solution components from diffusing within the space surrounding the substrate. This prevents the substrate holder and components provided around it from being exposed to the chemical solution atmosphere, thereby preventing a shortened lifespan of each component.

[0138] As a result, a substrate processing apparatus is realized that can improve the cleanliness of substrates after cleaning while suppressing an increase in the frequency of maintenance such as part replacement.

[0139] (Item 2) In the substrate processing apparatus according to item 1, The substrate processing apparatus includes: The apparatus may further include a cup that opens upward and is provided to surround the substrate holding portion, for receiving liquid that splashes from the substrate held by the substrate holding portion.

[0140] In this case, the liquid scattered from the substrate is collected by the cup, reducing the floating of droplets of various liquids around the substrate.

[0141] (Item 3) In the substrate processing apparatus according to item 2, The substrate processing apparatus includes: a housing that accommodates the substrate holder, the first liquid nozzle, the second liquid nozzle, and the two-fluid nozzle; an airflow forming unit that forms a downward airflow within the housing; The apparatus may further include an exhaust section that exhausts the atmosphere in the cup to the outside of the housing.

[0142] In this case, even if an atmosphere containing components of the chemical liquid is generated around the substrate when the chemical liquid is supplied to the substrate under the first control, the atmosphere is discharged to the outside of the housing without diffusing.

[0143] (Item 4) In the substrate processing apparatus according to item 3, The substrate processing apparatus includes: one or more electrical elements provided in at least a part of the chemical liquid supply unit, the rinse liquid supply unit, the gas supply unit, and the control unit; one or more wirings connected to the one or more electrical elements; At least a portion of the one or more electrical elements and the one or more wirings may be exposed within the housing.

[0144] In this case, even if at least a portion of one or more electrical elements and one or more wiring lines are exposed inside the housing, the exposed portions are not exposed to the chemical atmosphere. Therefore, there is no need to provide the one or more electrical elements and one or more wiring lines with a structure or processing to impart chemical resistance. Therefore, a low-cost, highly versatile substrate processing apparatus is realized.

[0145] (Item 5) In the substrate processing apparatus according to item 3 or 4, The substrate processing apparatus includes: further comprising one or more metal support members that support at least a portion of the substrate holder, the first liquid nozzle, the second liquid nozzle, and the two-fluid nozzle; At least a portion of the one or more support members may be exposed within the housing.

[0146] In this case, even if at least a portion of one or more support members is exposed inside the housing, the exposed portion is not exposed to the chemical atmosphere. Therefore, there is no need to provide the one or more support members with a structure or processing to impart chemical resistance. Therefore, a low-cost, highly versatile substrate processing apparatus is realized.

[0147] (Item 6) In the substrate processing apparatus according to any one of Items 1 to 5, The substrate processing apparatus includes: a rotation drive unit that rotates the substrate holder around an axis extending in a vertical direction, The control unit a fourth control for controlling the rinse liquid supply unit to discharge the rinse liquid from the second liquid nozzle onto the substrate and form a liquid film of the rinse liquid on the substrate; A fifth control may be performed in which the rotation drive unit is controlled to rotate the substrate holder so that the substrate is dried.

[0148] In this case, the surface of the substrate after cleaning with the fluid mixture is further rinsed with a liquid film of the rinse liquid by the fourth control, and then the substrate is rotated and dried by the fifth control.

[0149] (Item 7) In the substrate processing apparatus according to any one of items 1 to 6, The chemical solution is a mixed solution of ammonia water and hydrogen peroxide water, the rinse liquid is pure water, The gas may be nitrogen gas.

[0150] In this case, the first control covers one surface of the substrate and particles present on the one surface of the substrate with an alkaline chemical solution. In this case, the polarity of the zeta potential of the one surface of the substrate and the particles is made the same, making it easier for the particles present on the one surface of the substrate to peel off from the one surface. Then, the second control replaces the mixed solution on the one surface of the substrate with pure water. This prevents the mixed fluid of pure water and nitrogen gas from colliding with the chemical solution during the third control.

[0151] (Item 8) In the substrate processing apparatus according to any one of items 1 to 7, In the first control, the time for discharging the chemical liquid from the first liquid nozzle onto the substrate may be 1 second or more and 30 seconds or less.

[0152] In this case, the zeta potential of one surface of the substrate and of particles present on the one surface of the substrate is adjusted by discharging the chemical solution from the first liquid nozzle onto the substrate for one second or more, while the reduction in throughput due to the increase in the time required for the first control is suppressed by not discharging the chemical solution from the first liquid nozzle onto the substrate for longer than 30 seconds.

[0153] (Item 9) In the substrate processing apparatus according to any one of Items 1 to 8, In the second control, the time for which the rinse liquid is discharged from the second liquid nozzle onto the substrate may be 1 second or more and 10 seconds or less.

[0154] In this case, by discharging the chemical liquid from the second liquid nozzle onto the substrate for one second or more, the liquid film of the chemical liquid formed on one surface of the substrate can be replaced with the rinse liquid. On the other hand, by not discharging the rinse liquid from the second liquid nozzle onto the substrate for longer than 10 seconds, a decrease in throughput due to the longer time required for the second control is suppressed.

[0155] (Item 10) The substrate processing method according to item 10 includes: A substrate processing method for processing a substrate using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a substrate holder for holding the substrate; a first liquid nozzle that discharges a chemical solution onto the substrate; a second liquid nozzle that discharges a rinse liquid onto the substrate; a two-fluid nozzle configured to spray a mixed fluid containing a gas and the rinse liquid onto the substrate; The substrate processing method includes: a first step of discharging the chemical liquid from the first liquid nozzle onto the substrate while the substrate is held by the substrate holder, thereby forming a liquid film of the chemical liquid on the substrate; a second step of discharging the rinse liquid from the second liquid nozzle onto the substrate and replacing at least a portion of the liquid film of the chemical liquid formed on the substrate in the first step with the rinse liquid, thereby forming a liquid film of the rinse liquid on the substrate; and a third step of ejecting the mixed fluid from the two-fluid nozzle onto the substrate.

[0156] In the substrate processing method, a liquid film of a chemical solution is formed on one surface of the substrate in a first step, and the zeta potential of the one surface of the substrate and of particles present on the one surface of the substrate is adjusted by contacting the alkaline chemical solution with the one surface of the substrate so that the particles present on the one surface of the substrate are easily peeled off from the one surface.

[0157] Next, in the second step, at least a portion of the chemical liquid on the substrate is replaced with the rinse liquid, and a liquid film of the rinse liquid is formed on one surface of the substrate in place of the liquid film of the chemical liquid. Thereafter, the mixed fluid is sprayed from the two-fluid nozzle onto the one surface of the substrate on which the liquid film of the rinse liquid has been formed.

[0158] According to the findings of the present inventors, the zeta potentials of the surface of the substrate and the particles adjusted in the first step are maintained during the second step, so that when the mixed fluid sprayed from the two-fluid nozzle collides with the surface of the substrate, the particles present on the surface of the substrate are efficiently and physically removed.

[0159] Furthermore, when the mixed fluid collides with one surface of the substrate, no chemical solution is present on that surface. Therefore, when the mixed fluid collides with the substrate, the fine droplets scattered from the collision point between the mixed fluid and the substrate do not contain chemical solution components. This prevents the atmosphere containing the chemical solution components from diffusing within the space surrounding the substrate. This prevents the substrate holder and components provided around it from being exposed to the chemical solution atmosphere, thereby preventing a shortened lifespan of each component.

[0160] As a result, a substrate processing apparatus is realized that can improve the cleanliness of substrates after cleaning while suppressing an increase in the frequency of maintenance such as part replacement.

[0161] According to the substrate processing apparatus of the above series of embodiments, diffusion of the chemical atmosphere inside the chamber is suppressed, thereby improving the working environment inside the chamber during maintenance inside the chamber. Furthermore, according to the above substrate processing apparatus, the cleanliness of the substrate after cleaning can be improved, thereby improving the yield of products obtained by substrate processing. Therefore, unnecessary substrate processing can be reduced, thereby realizing energy savings in substrate processing. [Explanation of symbols]

[0162] 1...substrate processing apparatus, 11...chemical liquid nozzle, 12...rinse liquid nozzle, 13...two-fluid nozzle, 20...substrate holding device, 21...substrate holding section, 21a...spin base, 21b...holding pin, 22...rotation drive section, 30...cup device, 30A...outer cup, 30B...inner cup, 31...cup drive section, 38...exhaust section, 39...liquid drainage device, 39A...outer container, 39B...inner container, 40...chemical liquid supply section, 50...first rinse liquid supply section, 60...second rinse liquid supply section, 70...gas supply section, 80...exhaust system, 90...liquid drainage system ,98...Gas collection tube, 99...Concentration detector, 150...Nozzle moving device, 151...Horizontal drive device, 152...Vertical drive device, 153...Base, 154...Support shaft, 155...Arm, 156...Nozzle holder, 200...Control unit, 201...CPU, 202...RAM, 203...ROM, 204...Storage device, 209...CD-ROM, 211...Circuit board, 212...Wiring, 300...Electrical element arrangement space, CH...Chamber, L1...Chemical solution, L2...Rinse liquid, PS...Processing space, W...Substrate, WC...Center,

Claims

1. A substrate processing apparatus for processing a substrate, a substrate holder for holding the substrate; a first liquid nozzle that discharges a chemical solution onto the substrate; a second liquid nozzle that discharges a rinse liquid onto the substrate; a two-fluid nozzle that sprays a mixed fluid containing a gas and the rinse liquid onto the substrate; a chemical liquid supply unit that supplies the chemical liquid to the first liquid nozzle; a rinse liquid supply unit that supplies the rinse liquid to the second liquid nozzle and the two-fluid nozzle; a gas supply unit that supplies the gas to the two-fluid nozzle; a control unit; The control unit a first control for controlling the chemical liquid supply unit while the substrate is held by the substrate holder to discharge the chemical liquid from the first liquid nozzle onto the substrate and form a liquid film of the chemical liquid on the substrate; a second control for controlling the rinse liquid supply unit to discharge the rinse liquid from the second liquid nozzle onto the substrate, and for forming a liquid film of the rinse liquid on the substrate by replacing at least a part of the liquid film of the chemical liquid formed on the substrate by the first control with the rinse liquid; and third control of injecting the mixed fluid from the two-fluid nozzle onto the substrate by controlling the rinse liquid supply unit and the gas supply unit.

2. The substrate processing apparatus according to claim 1 , further comprising a cup that opens upward and is provided to surround the substrate holding part, for receiving liquid splashed from the substrate held by the substrate holding part.

3. a housing that accommodates the substrate holder, the first liquid nozzle, the second liquid nozzle, and the two-fluid nozzle; an airflow forming unit that forms a downward airflow within the housing; The substrate processing apparatus according to claim 2 , further comprising an exhaust unit that exhausts the atmosphere in the cup to the outside of the housing.

4. one or more electrical elements provided in at least a part of the chemical liquid supply unit, the rinse liquid supply unit, the gas supply unit, and the control unit; one or more wirings connected to the one or more electrical elements; The substrate processing apparatus according to claim 3 , wherein at least a portion of the one or more electrical elements and the one or more wirings are exposed within the housing.

5. further comprising one or more metal support members that support at least a portion of the substrate holder, the first liquid nozzle, the second liquid nozzle, and the two-fluid nozzle; The substrate processing apparatus according to claim 3 , wherein at least a portion of the one or more support members is exposed within the housing.

6. a rotation drive unit that rotates the substrate holder around an axis extending in a vertical direction, The control unit a fourth control for controlling the rinse liquid supply unit to discharge the rinse liquid from the second liquid nozzle onto the substrate and form a liquid film of the rinse liquid on the substrate; 5. The substrate processing apparatus according to claim 1, further comprising a fifth control for controlling the rotation drive unit to rotate the substrate holder so as to dry the substrate.

7. The chemical solution is a mixed solution of ammonia water and hydrogen peroxide water, The rinse liquid is pure water, 5. The substrate processing apparatus according to claim 1, wherein the gas is nitrogen gas.

8. 5. The substrate processing apparatus according to claim 1, wherein in the first control, the time for discharging the chemical liquid from the first liquid nozzle onto the substrate is 1 second or more and 30 seconds or less.

9. 5. The substrate processing apparatus according to claim 1, wherein in the second control, the time for which the rinse liquid is discharged from the second liquid nozzle onto the substrate is not less than 1 second and not more than 10 seconds.

10. A substrate processing method for processing a substrate using a substrate processing apparatus, comprising: The substrate processing apparatus includes: a substrate holder for holding the substrate; a first liquid nozzle that discharges a chemical solution onto the substrate; a second liquid nozzle that discharges a rinse liquid onto the substrate; a two-fluid nozzle configured to spray a mixed fluid containing a gas and the rinse liquid onto the substrate; The substrate processing method includes: a first step of discharging the chemical liquid from the first liquid nozzle onto the substrate while the substrate is held by the substrate holder, thereby forming a liquid film of the chemical liquid on the substrate; a second step of discharging the rinse liquid from the second liquid nozzle onto the substrate and replacing at least a portion of the liquid film of the chemical liquid formed on the substrate in the first step with the rinse liquid, thereby forming a liquid film of the rinse liquid on the substrate; and a third step of spraying the mixed fluid from the two-fluid nozzle onto the substrate.

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