Light emitting device manufacturing method and light source device manufacturing method

Abstract

A method for manufacturing a light emitting device and a method for manufacturing a light source device that can improve the stability of the cutting position of a wavelength conversion member are provided. [Solution] A method for manufacturing a light emitting device includes the steps of: preparing a structure having a wavelength conversion member having a first surface and a second surface opposite the first surface, a plurality of light emitting units arranged on the first surface side, and a support member supporting the plurality of light emitting units, the plurality of light emitting units being located between the wavelength conversion member and the support member; irradiating laser light onto a first region of the wavelength conversion member located between adjacent light emitting units in a planar view perpendicular to the first surface to form a modified region in the first region; cleaving the wavelength conversion member at a position overlapping with the modified region in the planar view to form a cleaved region in the first region; and removing a portion of the first region including the cleaved region from the second surface side to form a recess in the wavelength conversion member.

Description

[Technical Field]

[0001] The present disclosure relates to a method for manufacturing a light emitting device and a method for manufacturing a light source device. [Background technology]

[0002] Patent Document 1 discloses that a structure having a conversion layer and a semiconductor laminate is divided into individual pieces. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2018-517305 Summary of the Invention [Problem to be solved by the invention]

[0004] In the conventional method for manufacturing a light emitting device, it is difficult to stabilize the cutting position of the wavelength conversion member.

[0005] An object of the present disclosure is to provide a method for manufacturing a light emitting device and a method for manufacturing a light source device that can improve the stability of the cleaving position of a wavelength conversion member. [Means for solving the problem]

[0006] According to one aspect of the disclosed technology, a method for manufacturing a light emitting device includes the steps of: preparing a structure having a wavelength conversion member having a first surface and a second surface opposite to the first surface, a plurality of light emitting units arranged on the first surface side, and a support member supporting the plurality of light emitting units, the plurality of light emitting units being located between the wavelength conversion member and the support member; irradiating laser light onto a first region of the wavelength conversion member located between adjacent light emitting units in a planar view perpendicular to the first surface to form a modified region in the first region; cleaving the wavelength conversion member at a position overlapping with the modified region in the planar view to form a cleaved region in the first region; and removing a portion of the first region including the cleaved region from the second surface side to form a recess in the wavelength conversion member. [Effects of the Invention]

[0007] According to the present disclosure, it is possible to improve the stability of the cutting position of the wavelength conversion member. [Brief explanation of the drawings]

[0008] [Figure 1] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 2] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 3] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 5] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 6] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 9]3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 10] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 13] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 14] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 15] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 16] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 17] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 18] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 19] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 20] 3A to 3C are plan views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 21] 3A to 3C are plan views illustrating a method for manufacturing the light source device according to the first embodiment. [Figure 22] 5A to 5C are cross-sectional views illustrating a method for manufacturing a light emitting device according to a modified example of the first embodiment. [Figure 23] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 24] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 25] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 26] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 27] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 28] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 29] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 30] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 31] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 32] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. [Figure 33] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. The following description is intended to embody the technical idea of ​​the present disclosure, and unless otherwise specified, the present disclosure is not limited to the following description.

[0010] In each drawing, components having the same function may be assigned the same symbol. For convenience, the embodiments may be shown separately to facilitate explanation or understanding of the main points, but partial substitution or combination of configurations shown in different embodiments or examples is possible. In the embodiments shown later, differences from the previously shown embodiments will be mainly explained, and redundant explanations of commonalities with the previously shown embodiments may be omitted. The size and positional relationship of components shown in each drawing may be exaggerated to clarify the explanation. To avoid overly complicated drawings, some elements may be omitted, or end views showing only the cut surface may be used as cross-sectional views.

[0011] (First embodiment) A first embodiment will be described. The first embodiment relates to a method for manufacturing a light emitting device and a method for manufacturing a light source device. FIGS. 1 to 19 are cross-sectional views illustrating a method for manufacturing a light source device according to the first embodiment. In particular, FIGS. 1 to 15 are cross-sectional views illustrating a method for manufacturing a light emitting device according to the first embodiment. FIGS. 20 and 21 are plan views illustrating a method for manufacturing a light source device according to the first embodiment.

[0012] As shown in FIGS. 10 to 14 , the method for manufacturing the light emitting device according to the first embodiment includes the steps of preparing a structure 112 including a wavelength converting member 30 having a first surface 30a and a second surface 30b located on the opposite side to the first surface 30a, a plurality of light emitting units 60 arranged on the first surface 30a side, and a support member 40 supporting the plurality of light emitting units 60, the plurality of light emitting units 60 being located between the wavelength converting member 30 and the support member 40; The method for manufacturing the light emitting device according to the first embodiment includes the steps of: irradiating laser light L to a first region 31 of the wavelength conversion member 30 located between adjacent light emitting units 60 in a plan view perpendicular to the surface 30a to form a modified region 210 in the first region 31; cleaving the wavelength conversion member 30 at a position overlapping the modified region 210 in a plan view to form a cleaved region 220 in the first region 31; and removing a portion of the first region 31 including the cleaved region 220 from the second surface 30b side to form a recess 35 in the wavelength conversion member 30. The method for manufacturing the light emitting device according to the first embodiment may include, after the step of forming the recess 35, a step of separating the light emitting unit 60 from the support member 40, as shown in FIG. 15 . The method for manufacturing the light source device according to the first embodiment may include, after the step of separating the light emitting unit 60 from the support member 40, a step of forming a covering member 600 that covers the side surface of the wavelength conversion member 30, as shown in FIGS. 17 and 18 .

[0013] <Process for preparing the structure> 1, a wafer W is prepared. The wafer W has a first substrate 91, a semiconductor layer 10, a conductive layer 55, a first insulating film 51, and a second insulating film 52.

[0014] The first substrate 91 may be, for example, a sapphire substrate.

[0015] The semiconductor layer 10 is disposed on a first substrate 91. The semiconductor layer 10 is formed on the first substrate 91 by, for example, metal organic chemical vapor deposition (MOCVD). The semiconductor layer 10 includes an n-side semiconductor layer 11, a p-side semiconductor layer 13, and an active layer 12 located between the n-side semiconductor layer 11 and the p-side semiconductor layer 13. The n-side semiconductor layer 11 is disposed on the first substrate 91, the active layer 12 is disposed on the n-side semiconductor layer 11, and the p-side semiconductor layer 13 is disposed on the active layer 12. The active layer 12 is a light-emitting layer that emits light, for example, with an emission peak wavelength of 210 nm or more and 580 nm or less. The active layer 12 can have, for example, a multiple quantum well (MQW) structure including multiple barrier layers and multiple well layers. The n-side semiconductor layer 11 includes a semiconductor layer containing n-type impurities. The p-side semiconductor layer 13 includes a semiconductor layer containing p-type impurities.

[0016] The semiconductor layer 10 has a surface 10a located opposite to the surface on which the active layer 12 and the p-side semiconductor layer 13 are disposed. Light emitted by the active layer 12 is extracted to the outside of the semiconductor layer 10 mainly from the surface 10a.

[0017] The n-side semiconductor layer 11 is located on the opposite side to the face 10a and has a first n-side exposed face 11a and a second n-side exposed face 11b exposed from the active layer 12 and the p-side semiconductor layer 13, respectively.

[0018] The semiconductor layer 10 is made of a nitride semiconductor. In this specification, the term "nitride semiconductor" refers to, for example, In x Al y Ga 1-x-y The term "nitride semiconductor" includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are varied within their respective ranges. In addition, the term "nitride semiconductor" also includes semiconductors with the above chemical formula that further contain Group V elements other than N (nitrogen), and semiconductors that further contain various elements added to control various physical properties such as conductivity type.

[0019] The conductive layer 55 is disposed on the p-side semiconductor layer 13 and is electrically connected to the p-side semiconductor layer 13. The conductive layer 55 has a function of diffusing a current supplied from a p-side electrode, which will be described later, in the plane direction of the p-side semiconductor layer 13.

[0020] Furthermore, the conductive layer 55 can have high reflectivity with respect to light emitted by the active layer 12. The conductive layer 55 having high reflectivity means that the conductive layer 55 has a reflectance of 50% or more, preferably 60% or more, with respect to the emission peak wavelength of light emitted by the active layer 12. Examples of materials that can be used for the conductive layer 55 include silver and aluminum. The conductive layer 55 can also be transparent to light emitted by the active layer 12. The conductive layer 55 having high reflectivity means that the conductive layer 55 has a light transmittance of 50% or more, preferably 60% or more, with respect to the emission peak wavelength of light emitted by the active layer 12. Examples of materials that can be used for the conductive layer 55 include indium tin oxide (ITO), indium oxide (In2O3), and zinc oxide (ZnO).

[0021] The first insulating film 51 covers the upper surface of the p-side semiconductor layer 13 and the conductive layer 55. Covering the conductive layer 55 with the first insulating film 51 reduces the influence of moisture and the like on the conductive layer 55, and can reduce the occurrence of migration in the conductive layer 55. The first insulating film 51 can be, for example, a silicon oxide film or a silicon nitride film.

[0022] The second insulating film 52 covers the first insulating film 51. The second insulating film 52 also covers a part of the first n-side exposed surface 11a and a part of the second n-side exposed surface 11b. The second insulating film 52 also covers the side surfaces of the semiconductor layer 10 that are continuous with the first n-side exposed surface 11a and the upper surface of the p-side semiconductor layer 13, and the side surfaces of the semiconductor layer 10 that are continuous with the second n-side exposed surface 11b and the upper surface of the p-side semiconductor layer 13.

[0023] 2, the surface of the wafer W opposite to the first substrate 91 is bonded to a second substrate 92. After bonding the wafer W and the second substrate 92, the first substrate 91 is removed. This makes it easy to form the light-transmitting layer 20 (see FIG. 5) and bond the wavelength conversion member 30 (see FIG. 6) while the semiconductor layer 10 is stably supported by the second substrate 92, even after the first substrate 91 is removed.

[0024] The second substrate 92 may be made of, for example, the same material as the first substrate 91. The surface of the wafer W opposite to the first substrate 91 is bonded to the second substrate 92 by a bonding member 93. The bonding member 93 may be made of, for example, a resin.

[0025] 3, the first substrate 91 is removed. The first substrate 91 can be removed by, for example, a laser lift-off method. The first substrate 91 is removed from the wafer W, and the surface 10a of the semiconductor layer 10 is exposed.

[0026] Next, as shown in Fig. 4, the surface 10a is roughened. For example, the surface 10a can be roughened by wet etching using an alkaline solution such as tetramethylammonium hydroxide (TMAH) or by dry etching using a gas containing chlorine. This can improve the light extraction efficiency from the surface 10a.

[0027] Next, as shown in Fig. 5, a light-transmitting layer 20 is formed on the roughened surface 10a. The light-transmitting layer 20 can be formed by, for example, chemical vapor deposition (CVD). The light-transmitting layer 20 can be made of, for example, silicon oxide or silicon nitride.

[0028] Next, as shown in FIG. 6 , the wavelength conversion member 30 is bonded to the light-transmitting layer 20. The light-transmitting layer 20 and the wavelength conversion member 30 can be directly bonded by applying pressure and heat. Direct bonding between the light-transmitting layer 20 and the wavelength conversion member 30 requires flatness at the bonding surface. Therefore, before directly bonding the light-transmitting layer 20 and the wavelength conversion member 30, it is preferable to polish the surface of the light-transmitting layer 20 to which the wavelength conversion member 30 is bonded by chemical mechanical polishing (CMP). This improves the flatness of the surface of the light-transmitting layer 20 to which the wavelength conversion member 30 is bonded, thereby increasing the bonding strength between the light-transmitting layer 20 and the wavelength conversion member 30. The surface roughness (arithmetic mean roughness Ra) of the surface of the light-transmitting layer 20 to which the wavelength conversion member 30 is bonded is preferably 0.2 nm or less, for example. The wavelength conversion member 30 has a first surface 30a and a second surface 30b located on the opposite side of the first surface 30a. The light-transmitting layer 20 and the semiconductor layer 10 are disposed on the first surface 30a side. In this manner, a first intermediate member 111 is prepared, which includes the semiconductor layer 10, the light-transmitting layer 20, the wavelength conversion member 30, the conductive layer 55, the first insulating film 51, and the second insulating film 52. The first intermediate member 111 may be purchased and prepared.

[0029] A sintered phosphor can be used for the wavelength conversion member 30. A sintered phosphor is a member in which a phosphor is sintered together with ceramics such as aluminum oxide, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide, or titanium oxide, and does not contain resin. By using a sintered phosphor for the wavelength conversion member 30, the heat dissipation of the phosphor improves compared to a member in which the phosphor is contained in a resin (binder), and therefore the decrease in wavelength conversion efficiency can be reduced. The phosphor is an yttrium-aluminum-garnet phosphor (for example, Y3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet phosphors (e.g., Tb3(Al,Ga)5O 12:Ce), β-sialon phosphors (e.g., (Si,Al)3(O,N)4:Eu), α-sialon phosphors (e.g., Ca(Si,Al) 12 (O,N) 16 :Eu), a nitride-based phosphor such as a CASN-based phosphor (e.g., CaAlSiN3:Eu) or a SCASN-based phosphor (e.g., (Sr,Ca)AlSiN3:Eu), a fluoride-based phosphor such as a KSF-based phosphor (e.g., K2SiF6:Mn), a KSAF-based phosphor (e.g., K2(Si,Al)F6:Mn) or a MGF-based phosphor (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), a phosphor having a perovskite structure (e.g., CsPb(F,Cl,Br,I)3), or a quantum dot phosphor (e.g., CdSe, InP, AgInS2, or AgInSe2). For example, the dielectric film 22 may include a film having a refractive index higher than that of the wavelength conversion member 30. The thickness of the wavelength conversion member 30 is, for example, 100 μm or more and 400 μm or less, preferably 120 μm or more and 300 μm or less, and more preferably 130 μm or more and 260 μm or less.

[0030] After the wavelength conversion member 30 is bonded to the light-transmitting layer 20, the second substrate 92 is removed. For example, the interface between the second substrate 92 and the bonding member 93 is irradiated with laser light to evaporate the bonding member 93 located at the interface, thereby peeling the second substrate 92 from the bonding member 93. Thereafter, the bonding member 93 can be removed from the semiconductor layer 10 by dissolving it using, for example, a chemical solution.

[0031] 7, by removing a portion of the semiconductor layer 10, the semiconductor layer 10 is separated into a plurality of light emitting sections 60 on the wavelength conversion member 30. The removed portions 10A of the semiconductor layer 10 become gaps between adjacent light emitting sections 60 that are separated from each other, and are formed, for example, in a lattice pattern in plan view. The light emitting sections 60 are arranged in a matrix pattern in plan view (see FIGS. 20 and 21).

[0032] A portion of the n-side semiconductor layer 11 below the second n-side exposed surface 11b is removed, and the semiconductor layer 10 is separated into a plurality of light emitting portions 60. In the step of separating the semiconductor layer 10 into a plurality of light emitting portions 60, it is preferable to remove a portion of the semiconductor layer 10 by etching. This makes it less likely that the semiconductor layer 10 will chip compared to when a portion of the semiconductor layer 10 is removed using a blade.

[0033] For example, in the state shown in FIG. 6, a portion of the semiconductor layer 10 made of a nitride semiconductor can be removed by covering the first intermediate member 111 with a mask except for a portion of the second n-side exposed surface 11b, and then performing dry etching using a chlorine-containing gas. Etching proceeds in the thickness direction of the semiconductor layer 10 from the second n-side exposed surface 11b exposed through the mask toward the surface 10a. A resist mask, for example, can be used as the mask.

[0034] In the example shown in FIG. 7 , in the step of separating the semiconductor layer 10 into a plurality of light-emitting sections 60, a portion of the light-transmitting layer 20 is also removed, and the wavelength conversion member 30 is exposed from the semiconductor layer 10 and the light-transmitting layer 20 at a portion 10A where a portion of the semiconductor layer 10 has been removed. A portion 20A where a portion of the light-transmitting layer 20 has been removed is located below the portion 10A where a portion of the semiconductor layer 10 has been removed. The portion 10A where a portion of the semiconductor layer 10 has been removed and the portion 20A where a portion of the light-transmitting layer 20 has been removed form gaps that extend in a direction penetrating the page in FIG. 7 . The light-transmitting layer 20 located below each light-emitting section 60 is separated into a plurality of sections by the portions 20A where a portion of the light-transmitting layer 20 has been removed.

[0035] For example, when the light-transmitting layer 20 contains silicon oxide, a portion of the light-transmitting layer 20 can be removed by RIE using a gas containing fluorine. In the RIE method, a portion of the semiconductor layer 10 and a portion of the light-transmitting layer 20 can be continuously removed by switching the type of gas.

[0036] 8, a p-side electrode 71 and an n-side electrode 72 are formed on the second insulating film 52. The p-side electrode 71 and the n-side electrode 72 can be formed by, for example, a sputtering method. The p-side electrode 71 contacts the upper surface of the conductive layer 55 in the opening formed in the second insulating film 52 and the opening formed in the first insulating film 51. The p-side electrode 71 is electrically connected to the p-side semiconductor layer 13 via the conductive layer 55. The n-side electrode 72 contacts the first n-side exposed surface 11a and is electrically connected to the n-side semiconductor layer 11.

[0037] Metallic materials such as Ag, Ni, Ti, Pt, Al, Ru, Rh, and Au, or alloys thereof, can be used for the p-side electrode 71 and the n-side electrode 72. The p-side electrode 71 and the n-side electrode 72 may be single layers of the above metallic materials, or may have a multilayer structure having multiple metal layers.

[0038] 9, a p-side external connection electrode 81 and an n-side external connection electrode 82 are formed. The p-side external connection electrode 81 and the n-side external connection electrode 82 can be formed by, for example, sputtering or plating. The p-side external connection electrode 81 is formed on the p-side electrode 71 and is electrically connected to the p-side electrode 71. The n-side external connection electrode 82 is formed on the n-side electrode 72 and is electrically connected to the n-side electrode 72. The thicknesses of the p-side external connection electrode 81 and the n-side external connection electrode 82 are greater than the thicknesses of the p-side electrode 71 and the n-side electrode 72.

[0039] The p-side external connection electrode 81 and the n-side external connection electrode 82 can be made of, for example, a metal material such as Ag, Ni, Ti, Pt, Al, Ru, Rh, or Au, or an alloy thereof. The p-side external connection electrode 81 and the n-side external connection electrode 82 may be a single layer of the above metal material, or may have a laminated structure having multiple metal layers. The p-side external connection electrode 81 and the n-side external connection electrode 82 can be formed by, for example, plating.

[0040] The steps of forming the p-side electrode 71, the n-side electrode 72, the p-side external connection electrode 81, and the n-side external connection electrode 82 may be performed at any timing before the attachment of the support member 40 (see FIG. 10 ). For example, as in a second embodiment described later, the steps of forming the p-side electrode 71, the n-side electrode 72, the p-side external connection electrode 81, and the n-side external connection electrode 82 may be performed before the second substrate 92 is bonded using a bonding member 93. When a resist mask is used in the step of etching and removing a portion of the semiconductor layer 10, it is preferable to place the resist mask on the first intermediate member 111 before the p-side external connection electrode 81 and the n-side external connection electrode 82 are formed. This allows the resist mask to be placed on the first intermediate member 111 in a state thinner than the first intermediate member 111 in a state in which the p-side external connection electrode 81 and the n-side external connection electrode 82 have been formed, which makes it easier to improve the patterning accuracy of the resist mask by exposure and development.

[0041] 10, a support member 40 is attached to the p-side external connection electrode 81 and the n-side external connection electrode 82. For example, an ultraviolet-curable resin sheet can be used as the support member 40. The support member 40 has a surface 40a on the first intermediate member 111 side and a surface 40b opposite to surface 40a.

[0042] In this manner, a structure 112 is prepared, which includes a plurality of light-emitting sections 60, the light-transmitting layer 20, the wavelength conversion member 30, the conductive layer 55, the first insulating film 51, the second insulating film 52, the p-side electrode 71, the n-side electrode 72, the p-side external connection electrode 81, the n-side external connection electrode 82, and the support member 40. The plurality of light-emitting sections 60 are arranged on the first surface 30a side, and the support member 40 supports the plurality of light-emitting sections 60. The plurality of light-emitting sections 60 are also positioned between the wavelength conversion member 30 and the support member 40.

[0043] <Process for forming modified portion> After the step of preparing the structure 112, as shown in FIG. 11 , laser light L is irradiated into the interior of the wavelength conversion member 30. The laser light L is, for example, pulsed laser light. In this case, the pulse width is, for example, 100 fs or more and 10 ps or less, preferably 100 fs or more and less than 3 ps. The peak wavelength of the laser light L is, for example, 350 nm or more and 1100 nm or less, preferably 700 nm or more and less than 1100 nm. The spot diameter of the laser light L, i.e., the minimum beam diameter, is, for example, 1 μm or more and 10 μm or less, preferably 1 μm or more and less than 5 μm. For example, the laser light L is irradiated into the interior of the wavelength conversion member 30 from the second surface 30b side opposite to the first surface 30a on which the light-transmitting layer 20 and the light-emitting units 60 are arranged. The laser light L is also irradiated onto the first region 31 of the wavelength conversion member 30 located between adjacent light-emitting units 60 in a plan view perpendicular to the first surface 30a. The laser light L may be irradiated from the first surface 30a to the inside of the wavelength conversion member 30. By irradiating the laser light L from the second surface 30b, the light-emitting unit 60 is less likely to be damaged by the laser light L than when the laser light L is irradiated from the first surface 30a. When the laser light L is irradiated from the first surface 30a, part of the laser light L that is condensed toward the inside of the wavelength conversion member 30 may be irradiated onto the light-emitting unit 60, which may damage the light-emitting unit 60.

[0044] The laser light L is focused at a specific depth within the wavelength conversion member 30, and the energy of the laser light L is concentrated at that position, forming modified regions 210 in the first region 31. The modified regions 210 are more embrittled than regions where the laser light L is not focused. As shown in FIGS. 11 and 20 , the laser light L is scanned over a portion of the wavelength conversion member 30 that overlaps, in plan view, with a portion 10A of the semiconductor layer 10 that has been removed. In FIG. 11 , the laser light L is scanned in a direction penetrating the page. As shown in FIGS. 11 and 20 , multiple modified regions 210 are formed in portions of the wavelength conversion member 30 that overlap, in plan view, with a portion 10A of the semiconductor layer 10 that has been removed. The modified regions 210 formed by irradiation with the laser light L generate stress, which causes cracks to form inside the wavelength conversion member 30. The cracks extend from the modified regions 210 in the thickness direction of the wavelength conversion member 30. 20 shows only the wavelength conversion member 30 and the light emitting section 60, and other members are omitted. Furthermore, although the modified sections 210 are illustrated as dots in FIGS. 20 and 21, adjacent modified sections 210 may be connected to form a linear aggregate of multiple modified sections 210.

[0045] <Step of forming the cleaved portion> After the step of forming the modified section 210, the wavelength conversion member 30 is fractured starting from the modified section 210. For example, as shown in FIG. 12 , the wavelength conversion member 30 can be fractured by pressing the support member 40 using a pressing member 310. For example, a pressing force by the pressing member 310 is applied to the support member 40 from the surface 40b side at a position overlapping with the modified section 210 in a plan view. When the support member 40 receives the pressing force from the surface 40b side, a large tensile stress parallel to the first surface 30a acts on the wavelength conversion member 30. As a result, the wavelength conversion member 30 starts to crack from the second surface 30b side, starting from a crack that extends from the modified section 210 and reaches the second surface 30b or a crack that reaches close to the second surface 30b. As a result, the wavelength conversion member 30 is fractured. A fractured surface 30c is formed in the wavelength conversion member 30 by the fracture.

[0046] Next, the pressing of the support member 40 is stopped, and the cleaved surfaces 30c of the wavelength conversion member 30 are brought into contact with each other, as shown in Fig. 13. As a result, a cleaved portion 220 where the cleaved surfaces 30c are in contact with each other is formed in the first region 31. In a plan view, the cleaved portion 220 overlaps with the portion 10A where a part of the semiconductor layer 10 has been removed. In Fig. 13, the cleaved portion 220 extends in a direction penetrating the plane of the paper.

[0047] <Step of forming recesses> After the step of forming the cleaved portion 220, as shown in FIGS. 14 and 21, a portion of the first region 31 including the cleaved portion 220 is removed from the second surface 30b to form a recess 35 in the wavelength conversion member 30. The recess 35 can be formed using, for example, a cutting member 320. The recess 35 is formed at a position overlapping, in plan view, with the portion 10A of the semiconductor layer 10 from which a portion has been removed. For example, the recess 35 is formed so as to partially overlap with the light-emitting portion 60 in plan view. In FIG. 14, the recess 35 extends in a direction penetrating the page. The recess 35 is defined by a bottom surface 35a and a side surface 35b connecting the second surface 30b and the bottom surface 35a. Note that FIG. 21 shows only the wavelength conversion member 30 and the light-emitting portion 60, omitting other components. The recess 35 is indicated by a dashed line.

[0048] <Step of separating the light emitting unit from the support member> After the step of forming the recess 35, the light-emitting section 60 is separated from the support member 40, as shown in FIG. 15 . Specifically, the support member 40 is peeled off from the p-side external connection electrode 81 and the n-side external connection electrode 82. When an ultraviolet-curing resin sheet is used as the support member 40, the support member 40 can be irradiated with ultraviolet light to reduce the adhesive strength, and then the light-emitting section 60 can be separated from the support member 40. As a result, a plurality of light-emitting devices 113, each including the light-emitting section 60, are obtained from the structure 112.

[0049] <Step of forming covering member> After the process of separating the light-emitting section 60 from the support member 40, the light-emitting device 113 is mounted on a mounting substrate 400 as shown in Fig. 16. The mounting substrate 400 has an insulating substrate 410 made of a material such as aluminum nitride (AlN) and a plurality of conductive layers 420 made of a material such as copper (Cu). The light-emitting device 113 is flip-chip mounted, for example, such that the p-side external connection electrode 81 and the n-side external connection electrode 82 are individually connected to the conductive layers 420.

[0050] 17, a first resin 610 is formed. The first resin 610 is formed between the light emitting device 113 and the mounting substrate 400 using, for example, a dispenser. For example, the first resin 610 is formed so as to cover the first surface 30a.

[0051] 18, a second resin 620 is formed. The second resin 620 is, for example, discharged from a dispenser, and fills the gaps between adjacent first resins 610 and the gaps between adjacent wavelength conversion members 30. The covering member 600 is formed from the first resin 610 and the second resin 620. In this manner, a second intermediate member 114 having the mounting substrate 400, the plurality of light emitting devices 113, and the covering member 600 is obtained.

[0052] The covering member 600 preferably has light-blocking properties, and more specifically, preferably has light-reflecting properties. In particular, it preferably contains a material that can suitably reflect the light emitted from the light-emitting unit 60. For example, it preferably has a reflectance of 60% or more for the light emitted from the light-emitting unit 60, and more preferably has a reflectance of 70% or more, 80% or more, or 90% or more.

[0053] By covering the side surface of the light-emitting unit 60 with the covering member 600, light emitted from the side surface of the light-emitting unit 60 is reflected by the covering member 600. In addition, by covering the surface of the light-emitting unit 60 facing the mounting board 400 with the covering member 600, light traveling toward the mounting board 400 side of the light-emitting unit 60 is reflected by the covering member 600.

[0054] The covering member 600 may contain an insulating material. The covering member 600 may include, for example, a translucent resin containing particles of a light-reflecting substance. Examples of resins used for the covering member 600 include resins or hybrid resins containing one or more of silicone resin, modified silicone resin, epoxy resin, modified epoxy resin, urea resin, acrylic resin, phenolic resin, bismaleimide triazine resin, and polyphthalamide resin. Among these, silicone resin is particularly preferred because of its excellent light resistance, heat resistance, electrical insulation, and flexibility. Examples of light-reflecting substances include titanium dioxide, silicon dioxide, aluminum oxide, zirconium dioxide, magnesium oxide, potassium titanate, barium titanate, zinc oxide, silicon nitride, aluminum nitride, boron nitride, calcium carbonate, calcium hydroxide, calcium silicate, and combinations thereof. Among these, titanium dioxide, which has a relatively high refractive index, is preferred from the perspective of light reflection.

[0055] 19, the second intermediate member 114 is singulated along dicing lines between adjacent light emitting devices 113. The second intermediate member 114 can be singulated using, for example, a dicer. In this manner, a plurality of light source devices 1 are manufactured. Note that the light source device 1 may be formed having a plurality of light emitting devices 113 by singulating the second intermediate member 114 so that a plurality of light emitting devices 113 can be mounted thereon.

[0056] In the light source device 1, light emitted from the light-emitting unit 60 enters the wavelength conversion member 30 through the first surface 30a and exits from the second surface 30b, which is the light extraction surface. As shown in Fig. 19, the area of ​​the second surface 30b is smaller than the area of ​​the first surface 30a due to the recess 35. Therefore, when the light enters the wavelength conversion member 30, loss of light is small, and when the light exits the wavelength conversion member 30, the light intensity can be increased because the area of ​​the second surface 30b is smaller than the area of ​​the first surface 30a.

[0057] Furthermore, when dividing the first intermediate member 111 into a plurality of light emitting devices 113, it is also possible to form the recesses 35 without forming the modified portions 210, and then fracture the wavelength conversion member 30 by applying pressure. However, in this case, the wavelength conversion member 30 may be fractured at any of the thinned portions between the bottom surface 35a and the first surface 30a. In other words, the fracture position is unstable. In particular, when the area of ​​the second surface 30b is reduced to obtain higher light intensity, the area of ​​the bottom surface 35a increases, which significantly reduces the stability of the fracture position and increases the likelihood of variations in the shape and size of the wavelength conversion member 30. In contrast, in this embodiment, after the modified portions 210 are formed, the wavelength conversion member 30 is fractured (the fractured portions 220 are formed), and then the recesses 35 are formed. This makes it easier to fracture the wavelength conversion member 30 at a stable position, reducing variations in the shape and size of the wavelength conversion member 30.

[0058] It is also possible to form the modified portion 210 after forming the recess 35 in the wavelength conversion member 30. However, in this case, there is a possibility that the wavelength conversion member 30 will crack at an unintended timing. That is, the modified portion 210 will be formed in the portion of the wavelength conversion member 30 that has been thinned by forming the recess 35, and the strength of the wavelength conversion member 30 will be insufficient, which may result in the wavelength conversion member 30 cracking unintendedly during irradiation with laser light L, for example. In contrast, in this embodiment, the modified portion 210 is formed before the recess 35 is formed, thereby reducing unintended cracking of the wavelength conversion member 30.

[0059] 14, in the step of forming the recess 35, the first distance L1 between the first surface 30a and the bottom surface 35a is preferably smaller than the second distance L2 between the second surface 30b and the bottom surface 35a. When the first distance L1 is smaller than the second distance L2, the covering member 600 disposed above the recess 35 can be made thicker. As a result, light is emitted from the portion between the first surface 30a and the bottom surface 35a of the wavelength conversion member 30, which makes it easier to reduce light leakage from the covering member 600 disposed above the recess 35. As a result, the difference in luminance between the second surface 30b and the covering member 600 can be increased.

[0060] It is more preferable that the first distance L1 is 10 μm or more. When the first distance L1 is 10 μm or more, damage to the portion between the first surface 30a and the bottom surface 35a of the wavelength conversion member 30 can be made less likely to occur. It is more preferable that the second distance L2 is 50 μm or more. When the second distance L2 is 50 μm or more, light leakage can be easily reduced.

[0061] Before forming the recesses 35, an anti-reflection film may be formed on the second surface 30b, which is the light extraction surface. In this case, the light source device 1A shown in FIG. 22 is obtained. That is, the light source device 1A has an anti-reflection film 630 disposed on the second surface 30b. The recesses 35 are formed to penetrate the anti-reflection film 630.

[0062] (Second embodiment) A second embodiment will be described. The second embodiment differs from the first embodiment mainly in that the first substrate 91 is used without being removed. Figures 23 to 33 are cross-sectional views illustrating a method for manufacturing a light emitting device according to the second embodiment.

[0063] <Process for preparing the structure> In the second embodiment, a wafer W is prepared in the same manner as in the first embodiment (see FIG. 1). Next, as shown in FIG. 23, a portion of the semiconductor layer 10 is removed to separate the semiconductor layer 10 into a plurality of light emitting sections 60 on a first substrate 91. The removed portions 10A of the semiconductor layer 10 become gaps between adjacent light emitting sections 60 that are separated from each other, and are formed, for example, in a lattice pattern in plan view. The removal of the portions of the semiconductor layer 10 can be performed in the same manner as in the first embodiment. Furthermore, a p-side electrode 71 and an n-side electrode 72 are formed, and a p-side external connection electrode 81 and an n-side external connection electrode 82 are also formed.

[0064] Next, as shown in FIG. 24, a bonding member 93 is used to bond the surface of the wafer W opposite to the first substrate 91 to a second substrate 92.

[0065] Next, as shown in FIG. 25 , laser light L is irradiated onto the interior of the first substrate 91. For example, the laser light L is irradiated onto the interior of the first substrate 91 from the fourth surface 91b side, which is opposite to the third surface 91a on which the light-emitting units 60 are arranged. Specifically, the laser light L is irradiated onto a second region 94 of the first substrate 91, which is located between adjacent light-emitting units 60 in a plan view perpendicular to the third surface 91a. As a result, a modified region 215 is formed in the second region 94. The modified region 215 formed by the irradiation of the laser light L generates stress, and the stress causes a crack to form inside the first substrate 91. The crack propagates from the modified region 215 in the thickness direction of the first substrate 91.

[0066] Next, as shown in FIG. 26 , the wavelength conversion member 30 is bonded to the first substrate 91. The first substrate 91 and the wavelength conversion member 30 can be directly bonded together by applying pressure and heat. Direct bonding between the first substrate 91 and the wavelength conversion member 30 requires flatness at the bonding surface. For this reason, it is preferable to polish the surface of the first substrate 91 to which the wavelength conversion member 30 is bonded before directly bonding the first substrate 91 and the wavelength conversion member 30. This increases the flatness of the surface of the first substrate 91 to which the wavelength conversion member 30 is bonded, thereby increasing the bonding strength between the first substrate 91 and the wavelength conversion member 30. The surface roughness (arithmetic mean roughness Ra) of the surface of the first substrate 91 to which the wavelength conversion member 30 is bonded is preferably 0.2 nm or less, for example.

[0067] Next, as shown in FIG. 27, the second substrate 92 and the bonding member 93 are removed in the same manner as in the first embodiment.

[0068] 28 , a support member 40 is attached to the p-side external connection electrode 81 and the n-side external connection electrode 82. In this manner, a structure 122 is prepared, which includes a plurality of light-emitting units 60, a first substrate 91, a wavelength conversion member 30, a conductive layer 55, a first insulating film 51, a second insulating film 52, a p-side electrode 71, an n-side electrode 72, the p-side external connection electrode 81, the n-side external connection electrode 82, and the support member 40. The plurality of light-emitting units 60 are arranged on the first surface 30a side, and the support member 40 supports the plurality of light-emitting units 60. The plurality of light-emitting units 60 are also positioned between the wavelength conversion member 30 and the support member 40.

[0069] <Process for forming modified portion> After the step of preparing the structure 122, as shown in FIG. 29 , similar to the first embodiment, laser light L is irradiated into the interior of the wavelength conversion member 30. For example, laser light L is irradiated into the interior of the wavelength conversion member 30 from the second surface 30b opposite to the first surface 30a on which the first substrate 91 and the light-emitting units 60 are arranged. Specifically, laser light L is irradiated onto the first region 31 of the wavelength conversion member 30 located between adjacent light-emitting units 60 in a plan view perpendicular to the first surface 30a. As a result, a modified region 210 is formed in the first region 31. The modified region 210 formed by the irradiation of the laser light L generates stress, and the stress causes cracks to form inside the wavelength conversion member 30. The cracks propagate from the modified region 210 in the thickness direction of the wavelength conversion member 30.

[0070] <Step of forming the cleaved portion> 30 , after the step of forming the modified portion 210, a force is applied to the support member 40 using a pressing member 310, and the wavelength conversion member 30 and the first substrate 91 are fractured starting from the modified portion 210 and the modified portion 215. By the fracture, a fracture surface 30c is formed in the wavelength conversion member 30, and a fracture surface 91c is formed in the first substrate 91.

[0071] Next, the pressing of the support member 40 is stopped, and as shown in FIG. 31, the cleaved surfaces 30c of the wavelength conversion member 30 are brought into contact with each other, and the cleaved surfaces 91c of the first substrate 91 are brought into contact with each other. As a result, the cleaved surfaces 30c are brought into contact with each other, and cleaved portions 220 where the cleaved surfaces 91c are brought into contact with each other are formed in the first region 31 and the second region 94. The cleaved portions 220 are formed along the portions 10A where a portion of the semiconductor layer 10 has been removed. In a plan view, the cleaved portions 220 overlap with the portions 10A where a portion of the semiconductor layer 10 has been removed. In FIG. 31, the cleaved portions 220 extend in a direction penetrating the plane of the paper.

[0072] <Step of forming recesses> After the step of forming the cleaved portion 220, as in the first embodiment, a portion of the first region 31 including the cleaved portion 220 is removed from the second surface 30b side to form a recess 35 in the wavelength conversion member 30, as shown in FIG. 32.

[0073] <Step of separating the light emitting unit from the support member> 33, similarly to the first embodiment, the light emitting section 60 is separated from the support member 40. Specifically, the support member 40 is peeled off from the p-side external connection electrode 81 and the n-side external connection electrode 82. As a result, a plurality of light emitting devices 123 including the light emitting section 60 are obtained from the structure 122.

[0074] Thereafter, similarly to the first embodiment, the light emitting device 123 is mounted on the mounting substrate 400 (see FIG. 16), the first resin 610 is formed (see FIG. 17), the second resin 620 is formed (see FIG. 18), and the light emitting device is singulated (see FIG. 19). In this manner, a plurality of light source devices are manufactured.

[0075] The second embodiment can also provide the same effects as the first embodiment.

[0076] The present specification includes the following embodiments. Section 1. a step of preparing a structure including a wavelength converting member having a first surface and a second surface located opposite to the first surface, a plurality of light emitting units arranged on the first surface side, and a support member supporting the plurality of light emitting units, wherein the plurality of light emitting units are located between the wavelength converting member and the support member; irradiating a first region of the wavelength conversion member located between the light emitting units adjacent to each other in a plan view perpendicular to the first surface with laser light to form a modified region in the first region; cleaving the wavelength conversion member at a position overlapping the modified portion in the plan view to form a cleaved portion in the first region; removing a part of the first region including the cleaved portion from the second surface side to form a recess in the wavelength conversion member; A method for manufacturing a light emitting device comprising the steps of: Section 2. 2. The method for manufacturing a light emitting device according to item 1, wherein the recess overlaps the light emitting portion in the plan view. Section 3. 3. The method for manufacturing a light emitting device according to item 1 or 2, wherein the modified portion is removed in the step of forming the recess in the wavelength conversion member. Section 4. In the step of forming the modified portion, a focusing position of the laser light is closer to the second surface than to the first surface, 4. The method for manufacturing a light emitting device according to any one of items 1 to 3, wherein the step of breaking the wavelength conversion member includes pressing a pressing member against the support member from an opposite side to the wavelength conversion member. Section 5. the recess is defined by a bottom surface and a side surface connecting the second surface and the bottom surface, 5. The method for manufacturing a light emitting device according to any one of items 1 to 4, wherein a first distance between the first surface and the bottom surface is smaller than a second distance between the second surface and the bottom surface. Section 6. 6. The method for manufacturing a light emitting device according to item 5, wherein the first distance is 10 μm or more. Section 7. 7. The method for manufacturing a light emitting device according to item 5 or 6, wherein the second distance is 50 μm or more. Section 8. 8. The method for manufacturing a light emitting device according to any one of items 1 to 7, further comprising the step of separating the light emitting section from the support member after the step of forming the recess. Section 9. Each step of the manufacturing method of the light emitting device described in item 8 above; forming a covering member that covers a side surface of the wavelength conversion member after the step of separating the light emitting unit from the support member; A method for manufacturing a light source device comprising the steps of: [Explanation of symbols]

[0077] 1, 1A: Light source device 10: Semiconductor layer 11: n-side semiconductor layer 12:Active layer 13: p-side semiconductor layer 20: Transparent layer 30: Wavelength conversion material 30a: 1st page 30b: 2nd side 30c:Cut surface 31:First area 35: Recess 35a: Bottom 35b: Side 40: Support member 60: Light emitting part 91: First board 92: Second board 93: Joint material 112, 122: Structure 113, 123: Light-emitting device 210: Modification section 220: Cutting part 400: Mounting board 600: Covering material L: Laser light

Claims

1. a step of preparing a structure including a wavelength converting member having a first surface and a second surface located opposite to the first surface, a plurality of light emitting units arranged on the first surface side, and a support member supporting the plurality of light emitting units, wherein the plurality of light emitting units are located between the wavelength converting member and the support member; irradiating a first region of the wavelength conversion member located between the light emitting units adjacent to each other in a plan view perpendicular to the first surface with laser light to form a modified region in the first region; cleaving the wavelength conversion member at a position overlapping the modified portion in the plan view to form a cleaved portion in the first region; removing a part of the first region including the cleaved portion from the second surface side to form a recess in the wavelength conversion member; A method for manufacturing a light emitting device comprising the steps of:

2. The method for manufacturing a light emitting device according to claim 1 , wherein the recess overlaps the light emitting portion in the plan view.

3. The method for manufacturing a light emitting device according to claim 1 , wherein the modified portion is removed in the step of forming the recess in the wavelength conversion member.

4. In the step of forming the modified portion, a focusing position of the laser light is closer to the second surface than to the first surface, The method for manufacturing a light emitting device according to claim 1 , wherein the step of breaking the wavelength conversion member comprises pressing a pressing member against the support member from an opposite side to the wavelength conversion member.

5. the recess is defined by a bottom surface and a side surface connecting the second surface and the bottom surface; The method for manufacturing a light-emitting device according to claim 1 , wherein a first distance between the first surface and the bottom surface is smaller than a second distance between the second surface and the bottom surface.

6. The method for manufacturing a light emitting device according to claim 5 , wherein the first distance is 10 μm or more.

7. The method for manufacturing a light emitting device according to claim 6 , wherein the second distance is 50 μm or more.

8. The method for manufacturing a light emitting device according to claim 1 , further comprising the step of separating the light emitting section from the support member after the step of forming the recess.

9. Each step of the method for manufacturing a light emitting device according to claim 8; forming a covering member that covers a side surface of the wavelength conversion member after the step of separating the light emitting unit from the support member; A method for manufacturing a light source device comprising the steps of:

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