Substrate Processing Equipment

Abstract

To reduce the installation area of ​​a substrate processing apparatus. [Solution] The substrate processing apparatus of the embodiment includes a holding unit that holds the back surface of a substrate having a predetermined film formed on its outer periphery so that the surface direction of the substrate intersects the horizontal direction and rotates the substrate in a circumferential direction; a chemical tank that stores a chemical solution that removes the predetermined film and in which one end of the substrate is immersed; a nozzle downstream of the chemical tank that supplies a rinse liquid and a fluid that dries the rinse liquid to the outer periphery of the substrate; and a film thickness meter downstream of the nozzle that measures the film thickness of the predetermined film on the outer periphery of the substrate.

Description

[Technical Field]

[0001] FIELD An embodiment of the present invention relates to a substrate processing apparatus. [Background technology]

[0002] In the manufacturing process of semiconductor devices, there are substrate processing apparatuses that process the outer periphery of a substrate using a chemical solution or the like. In such substrate processing apparatuses, the substrate is generally held horizontally during processing. However, when the substrate is held horizontally during processing, it is difficult to reduce the installation area of ​​the substrate processing apparatus. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2003-197592 [Patent Document 2] Patent No. 4709346 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment is to provide a substrate processing apparatus, a substrate processing method, and a semiconductor device manufacturing method that can reduce the installation area. [Means for solving the problem]

[0005] The substrate processing apparatus of the embodiment includes a holding unit that holds the back surface of a substrate having a predetermined film formed on its outer periphery so that the surface direction of the substrate intersects the horizontal direction and rotates the substrate in a circumferential direction; a chemical tank that stores a chemical solution for removing the predetermined film and in which one end of the substrate is immersed; a nozzle downstream of the chemical tank that supplies a rinse liquid and a fluid that dries the rinse liquid to the outer periphery of the substrate; and a film thickness meter downstream of the nozzle that measures the film thickness of the predetermined film on the outer periphery of the substrate. [Brief explanation of the drawings]

[0006] [Figure 1] 1 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a first embodiment. [Figure 2] 3A to 3C are cross-sectional views of a substrate illustrating a part of the procedure of the method for manufacturing the semiconductor device according to the first embodiment. [Figure 3] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a first modified example of the first embodiment. [Figure 4] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to Modification 2 of Embodiment 1. [Figure 5] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to Modification 2 of Embodiment 1. [Figure 6] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a third modification of the first embodiment. [Figure 7] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a fourth modification of the first embodiment. [Figure 8] FIG. 13 is a schematic view showing an example of the configuration of a substrate processing apparatus according to a fifth modified example of the first embodiment. [Figure 9] FIG. 10 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to a second embodiment. [Figure 10] FIG. 10 is a schematic diagram showing an example of the configuration of a nozzle and a suction nozzle included in a substrate processing apparatus according to a first modification of the second embodiment. [Figure 11] FIG. 10 is a schematic diagram showing an example of the configuration of a nozzle included in a substrate processing apparatus according to Modification 2 of Embodiment 2. [Figure 12] FIG. 10 is a schematic diagram showing an example of the configuration of a plurality of nozzles included in a substrate processing apparatus according to a third modification of the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0007] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the following embodiments. Furthermore, the components in the following embodiments include those that can be easily imagined by a person skilled in the art or those that are substantially the same.

[0008] [Embodiment 1] Hereinafter, the first embodiment will be described in detail with reference to the drawings.

[0009] (Configuration example of substrate processing apparatus) Fig. 1 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1 according to embodiment 1. Fig. 1(a) is a front view of the inside of a processing chamber of the substrate processing apparatus 1. Fig. 1(b) and Fig. 1(c) are side views of the inside of the processing chamber of the substrate processing apparatus 1.

[0010] The substrate processing apparatus 1 of the first embodiment is configured as, for example, a semiconductor manufacturing apparatus that uses a chemical solution to process a plurality of substrates W. This performs an edge cutting process to remove a predetermined film, such as an insulating film or a metal film (not shown), formed on the outer periphery of each of these substrates W.

[0011] As shown in FIG. 1, the substrate processing apparatus 1 of the first embodiment includes rollers 11 and 12, flow grooves 21, 22, and 23, drive units 31, 32, and 33, a chemical liquid supply unit 41, a rinse liquid supply unit 42, a fluid supply unit 43, a film thickness meter 50, and a control unit 60.

[0012] Of these components, the rollers 11 and 12, the flow grooves 21, 22, and 23, the drive units 31, 32, and 33, the chemical liquid supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43 are provided for each individual substrate W.

[0013] That is, a plurality of rollers 11, 12 are provided corresponding to the plurality of substrates W, respectively, and hold the plurality of vertically standing substrates W (Wa, Wb, Wc, etc.) aligned horizontally at predetermined intervals. More specifically, the plurality of substrates W are aligned horizontally with the surfaces on which the predetermined film is formed facing the same direction. These substrates W are at the same manufacturing stage and are substrates from the same lot or multiple lots having the same configuration.

[0014] For example, predetermined rollers 11, 12 correspond to these rollers 11, 12 and support at least two points on the outer periphery of the lower side of the vertically standing substrate W. Furthermore, these rollers 11, 12 are configured to be rotatable by a drive unit (not shown), and rotate the supported substrate W in the circumferential direction. The rotation speed of the substrate W can be, for example, 1000 rpm (Rotations Per Minute).

[0015] 1(a), circulation grooves 21-23 are provided below the substrate W held by rollers 11, 12, in this order from the upstream side in the rotation direction of the substrate W. These circulation grooves 21-23 are, for example, arc-shaped along the outer periphery of the substrate W, and are grooves that are open at the top toward the substrate W and closed at the bottom. Liquids such as chemical solutions or gases such as dry air can flow through the circulation grooves 21-23.

[0016] The flow grooves 21 to 23 are arranged along the outer periphery of the substrate W from the upstream side in the rotation direction of the substrate W, so that the outer periphery of the substrate W rotated by the rollers 11, 12 passes sequentially through these flow grooves 21 to 23. As a result, the outer periphery of the substrate W is sequentially treated by the liquid or gas flowing through the flow grooves 21 to 23.

[0017] The flow groove 21, which serves as a first flow groove, is provided with a chemical supply unit 41 that supplies a chemical solution. The chemical supply unit 41 causes the chemical solution to flow from the upstream side to the downstream side of the flow groove 21. The chemical solution that reaches the downstream end of the flow groove 21 is discharged from the downstream end of the flow groove 21 to the outside of the flow groove 21. The chemical solution discharged from the flow groove 21 may be circulated back into the flow groove 21 and used repeatedly.

[0018] The chemical liquid supplied to the flow groove 21 by the chemical liquid supply unit 41 is a removal liquid or the like that removes a predetermined film formed on the outer periphery of the substrate W. When the predetermined film is an insulating layer such as a silicon oxide layer or a silicon nitride layer, for example, hydrofluoric acid (HF aqueous solution) or the like can be used as the chemical liquid. When the predetermined film is a metal-containing layer such as a tungsten layer or a tungsten nitride layer, for example, hydrogen peroxide solution (H2O2 aqueous solution), or a mixture of hydrogen peroxide solution and an organic alkali such as a choline solution can be used as the chemical liquid.

[0019] A rinse liquid supply unit 42 that supplies a rinse liquid is provided in the flow groove 22 serving as a second flow groove. The rinse liquid supply unit 42 distributes the rinse liquid from the upstream side to the downstream side of the flow groove 22. The rinse liquid that reaches the downstream end of the flow groove 22 is discharged from the downstream end of the flow groove 22 to the outside of the flow groove 22. Here, the supply position of the rinse liquid is preferably closer to the inside of the substrate W than the supply position of the chemical liquid. Furthermore, the rinse liquid discharged from the flow groove 22 may be circulated back into the flow groove 22 and used repeatedly.

[0020] The rinse liquid supplied to the flow groove 22 by the rinse liquid supply unit 42 is a liquid for cleaning the outer periphery of the substrate W that has been treated with the chemical liquid, and is, for example, pure water or deionized water (DIW).

[0021] The flow groove 23, which serves as the third flow groove, is provided with a fluid supply unit 43 that supplies a dry fluid. The fluid supply unit 43 distributes the dry fluid from the downstream side to the upstream side of the flow groove 23. The dry fluid that reaches the downstream end of the flow groove 23 is discharged from the upstream end of the flow groove 23 to the outside of the flow groove 23. The dry fluid discharged from the flow groove 23 may be circulated back into the flow groove 23 and used repeatedly.

[0022] The drying fluid supplied by the fluid supply unit 43 to the flow groove 23 is a liquid or gas that dries the outer periphery of the substrate W that has been cleaned with the rinse liquid, such as heated dry air (N2) or isopropyl alcohol (IPA).

[0023] Further, drive units 31 to 33 are provided in the circulation grooves 21 to 23, respectively. The drive units 31 to 33 are configured to be able to drive the circulation grooves 21 to 23 in the radial direction of the substrate W, respectively.

[0024] By moving these circulation grooves 21-23 away from the substrate W in the radial direction, the width of the outer periphery of the substrate W to be treated with the chemical solution, etc. is narrowed. By moving these circulation grooves 21-23 closer to the substrate W in the radial direction, the width of the outer periphery of the substrate W to be treated with the chemical solution, etc. is widened. This state is shown in Figures 1(b) and 1(c).

[0025] Figures 1(b) and 1(c) show that rollers 11 (11a, 11b, 11c...), 12 (12a, 12b, 12c...), flow grooves 21 (21a, 21b, 21c...), and drive units 31 (31a, 31b, 31c...) are provided for each individual substrate W (Wa, Wb, Wc...).

[0026] 1(b) and 1(c) show, as representatives, the flow groove 21 and the drive unit 31 provided for each individual substrate W among the flow grooves 21 to 23 and the drive units 31 to 33. However, as described above, the flow grooves 22 and 23, the drive units 32 and 33, the chemical liquid supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43, which are not shown in FIGS. 1(b) and 1(c), are also provided corresponding to each of the multiple substrates W.

[0027] 1(b), the drive units 31 provided corresponding to the individual flow grooves 21 are driven in a direction radially approaching the substrate W under the control of the control unit 60. This increases the amount of sinking of the outer periphery of each substrate W into the chemical solution flowing through each flow groove 21, and the outer periphery of the substrate W is processed over a wider width.

[0028] 1(c), the drive units 31 provided corresponding to the individual flow grooves 21 are driven in the radial direction away from the substrate W under the control of the control unit 60. This reduces the amount of sinking of the outer periphery of each substrate W into the chemical solution flowing through each flow groove 21, and the outer periphery of the substrate W is processed over a narrower width.

[0029] The film thickness meter 50 is configured as an optical sensor or the like that irradiates electromagnetic waves Lm such as X-rays to measure the film thickness of a predetermined film formed on the outer periphery of the substrate W. The multiple substrates W are arranged with the surfaces on which the predetermined film is formed facing the same direction. With the direction in which the surfaces on which the predetermined film is formed of the multiple substrates W face forward, the film thickness meter 50 irradiates the electromagnetic waves Lm to a measurement point Pm on the upper outer periphery of the leading substrate W that is set up vertically. In this way, the film thickness meter 50 measures the film thickness of the predetermined film formed on the outer periphery of the leading substrate W.

[0030] However, the film thickness meter 50 may measure the film thickness of the outer periphery of the substrate W passing through this interval at any position between the downstream end of the flow groove 23 and the upstream end of the flow groove 21. Because the outer periphery of the substrate W is in a dry state between the flow groove 23 and the flow groove 21, the film thickness of the predetermined film can be measured with high accuracy without being obstructed by droplets of the chemical or rinse liquid.

[0031] In other words, it is sufficient that the substrate W is in a dry state to ensure sufficient accuracy in the measurement by the film thickness meter 50. Therefore, it is not necessary for the substrate W to be completely cleaned with the rinse liquid and dried with the drying fluid during one rotation of the substrate W.

[0032] The predetermined film may be formed on the periphery of both the front and back surfaces of the substrate W. In this case, the predetermined film on the front surface of the substrate W, i.e., the surface of the substrate W on which the semiconductor device is provided, is generally the target of the chemical treatment. On the other hand, the treatment film on the back surface of the substrate W, i.e., the surface opposite to the surface on which the semiconductor device is provided, may also be the target of the chemical treatment. Furthermore, the predetermined film on both the front and back surfaces of the substrate W may also be the target of the chemical treatment.

[0033] The plurality of substrates W can be held by the rollers 11, 12 so that the surface to be processed of the front and back surfaces of the substrates W faces the film thickness meter 50. Furthermore, when both the front and back surfaces of the substrates W are to be processed, the surface that requires more precise processing can be placed facing the film thickness meter 50.

[0034] The control unit 60 is configured as a computer including, for example, a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and controls each part of the substrate processing apparatus 1.

[0035] That is, the control unit 60 controls, for example, the rollers 11 and 12 to rotate the substrate W, while controlling the chemical liquid supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43 to circulate the chemical liquid, the rinse liquid, and the drying fluid through the circulation grooves 21 to 23, respectively, to process the outer periphery of the substrate W.

[0036] The control unit 60 also controls the film thickness meter 50 to measure the film thickness of a predetermined film on the outer periphery of the substrate W, and performs various controls based on the measurement results. At this time, of the multiple substrates W processed at one time in the substrate processing apparatus 1, only the first substrate W has its film thickness measured by the film thickness meter 50. However, as described above, these substrates W are substrates at the same manufacturing stage and have the same configuration. Therefore, for example, the film thickness of the first substrate W can be used as representative data for these substrates W to perform the various processes described below.

[0037] Specifically, the control unit 60 controls the driving units 31-33 to adjust the radial positions of the circulation grooves 21-23 relative to the substrate W based on the measurement results of the film thickness meter 50. More specifically, the control unit 60 adjusts the positions of the circulation grooves 21-23 relative to the substrate W in accordance with the width of the predetermined film on the substrate W. Furthermore, when the predetermined film formed in a ring shape on the outer periphery of the substrate W is eccentric with respect to the center position of the substrate W, the control unit 60 appropriately changes the positions of the circulation grooves 21-23 relative to the substrate W each time the substrate W rotates, thereby changing the processing width in accordance with the position of the outer periphery of the substrate W.

[0038] Furthermore, the control unit 60 calculates the timing at which a desired amount of a predetermined film will be removed from the outer periphery of the substrate W based on the measurement results of the film thickness meter 50, and determines the timing at which the substrate processing will end. At this time, the control unit 60 may determine the processing time before the processing starts based on the film thickness measurement results of the predetermined film before the chemical processing.

[0039] Alternatively, the control unit 60 may monitor the thickness of the predetermined film during the chemical processing, and terminate the processing of the substrate W upon detecting, for example, that the predetermined film has been sufficiently removed. Also alternatively, the control unit 60 may monitor the thickness of the predetermined film during the chemical processing, and terminate the processing of the substrate W upon detecting, for example, that the base of the predetermined film has been exposed.

[0040] (Method of manufacturing a semiconductor device) Next, an example of a method for manufacturing the semiconductor device 70 of the first embodiment will be described with reference to Fig. 2. Fig. 2 is a cross-sectional view of the substrate W illustrating part of the procedure for the method for manufacturing the semiconductor device 70 according to the first embodiment.

[0041] The semiconductor device 70 is manufactured on the substrate W through a plurality of processes. Therefore, the chemical treatment by the substrate processing apparatus 1 described above is repeated depending on the manufacturing stage of the semiconductor device 70, and the type of the predetermined film to be processed may vary as appropriate. Figure 2 shows the semiconductor device 70 in the middle of manufacturing, and is an example in which the predetermined film to be processed is a metal film.

[0042] As shown in FIG. 2(a), the semiconductor device 70, at the manufacturing stage shown in FIG. 2(a), comprises an insulating film 71 formed on a substrate W such as a silicon substrate, a titanium nitride film 72 formed on the insulating film 71, and a tungsten film 73 formed on the titanium nitride film 72.

[0043] More specifically, the insulating film 71 is formed on the surface of the substrate W excluding the outer periphery. A plug having a liner of, for example, a titanium nitride film 72 and a core of a tungsten film 73 is formed in the insulating film 71. In this manner, the semiconductor device 70 is manufactured in the element region ER in which the insulating film 71 is formed, excluding, for example, the outer periphery of the substrate W.

[0044] The titanium nitride film 72 is also formed on the upper surface of the insulating film 71, the outer periphery of the substrate W, and the back surface of the substrate W. Here, the titanium nitride film 72 is formed, for example, by nitriding a titanium film 72b that serves as a seed film. For this reason, in the outer periphery and bevel of the substrate W, which are outside the element region ER and are not subject to various processes, titanium film 72b that has not been subjected to the nitriding process may remain below the titanium nitride film 72. Furthermore, part of the remaining titanium film 72b may bond with silicon or the like of the underlying substrate W to form a titanium silicide film 72a.

[0045] The tungsten film 73 is also formed in a region of the surface of the substrate W, excluding the outer periphery, that substantially overlaps with the region where the insulating film 71 is formed.

[0046] The titanium nitride film 72 and the tungsten film 73 formed on the insulating film 71 and in the outer region of the insulating film 71 are unnecessary portions and are therefore to be removed.

[0047] 2(b), the titanium nitride film 72 and the tungsten film 73 on the insulating film 71 are removed by, for example, CMP (Chemical Mechanical Polishing). However, the titanium nitride film 72 and the tungsten film 73 formed in the outer region of the insulating film 71 still remain even after the CMP process. For this reason, the outer periphery of the substrate W is treated with a chemical solution by, for example, the substrate processing apparatus 1 described above.

[0048] That is, a plurality of substrates W standing vertically are held on a plurality of rollers 11, 12 of the substrate processing apparatus 1, aligned horizontally at a predetermined interval from each other. The control unit 60 controls the rollers 11, 12 to rotate the plurality of substrates W held on these rollers 11, 12. The control unit 60 also controls the chemical liquid supply unit 41, the rinse liquid supply unit 42, and the fluid supply unit 43 to circulate the chemical liquid, rinse liquid, and drying fluid, respectively, within the flow channels 21-23. At this time, as described above, the chemical liquid, rinse liquid, and drying fluid may be controlled to repeatedly circulate within the flow channels 21-23.

[0049] The outer peripheries of the plurality of substrates W are sequentially immersed in the chemical liquid in the flow groove 21 and the rinse liquid in the flow groove 22, and are further exposed to the drying fluid in the flow groove 23. As a result, the tungsten film 73 and the titanium nitride film 72, which are predetermined films formed on the outer peripheries of the plurality of substrates W, are treated with the chemical liquid. Furthermore, the outer peripheries of the plurality of substrates W after the chemical treatment are cleaned with the rinse liquid. At this time, as described above, it is preferable that the supply position of the rinse liquid is closer to the inner side of the substrate W than the supply position of the chemical liquid. Furthermore, the outer peripheries of the plurality of substrates W after cleaning are dried with the drying fluid.

[0050] As the substrates W rotate in the circumferential direction, the tungsten films 73 and titanium nitride films 74 on the outer peripheries of the plurality of substrates W are repeatedly treated with the chemical solution, and the film thicknesses of these films are gradually reduced.

[0051] Meanwhile, the control unit 60 acquires measurement results from the film thickness meter 50 at least before the chemical treatment. This provides data on the film thicknesses of the tungsten film 73 and the titanium nitride film 74 before the chemical treatment. The control unit 60 can determine the chemical treatment time for the outer periphery of the substrate W from these film thicknesses.

[0052] Alternatively, in addition to or instead of the measurement results before the chemical treatment, the control unit 60 may continuously acquire measurement results from the film thickness meter 50 during the above-mentioned chemical treatment, and monitor the film thicknesses of the tungsten film 73 and the titanium nitride film 74.

[0053] In this case, the control unit 60 can terminate the chemical solution treatment by setting the timing at which the tungsten film 73 and the titanium nitride film 74 have disappeared as the end point based on the real-time film thicknesses of the tungsten film 73 and the titanium nitride film 74. The control unit 60 may also detect that the titanium film 72b underlying the tungsten film 73 and the titanium nitride film 74 has been exposed, and terminate the chemical solution treatment by setting the timing at which the exposure of the titanium film 72b is detected as the end point.

[0054] As shown in FIG. 2(c), the tungsten film 73 and the titanium nitride film 74 are removed from the outer periphery of the substrate W by the above-described processing in the substrate processing apparatus 1.

[0055] It is not necessary that the substrate W has been completely cleaned with the rinse liquid and dried with the drying fluid when the processing by the substrate processing apparatus 1 is completed. As long as the chemical liquid has been removed to the extent that the processing of the substrate W by the chemical liquid does not proceed any further, some chemical liquid or rinse liquid may remain on the substrate W. In such a case, after the substrate W is unloaded from the substrate processing apparatus 1, the cleaning and drying of the substrate W may be completed by another cleaning apparatus or the like.

[0056] Various subsequent steps are carried out to manufacture the semiconductor device 70 of the first embodiment.

[0057] (Overview) A semiconductor device is manufactured by repeatedly performing a plurality of processes, including a film formation process and an etching process, during which predetermined films formed outside the element region are appropriately removed to maintain the flatness of the surface of the substrate W and to suppress the generation of particles.

[0058] When removing a predetermined film from the outer periphery of a substrate, the substrate is usually held horizontally and rotated to supply a chemical solution to the outer periphery of the substrate. This prevents the chemical solution from scattering toward the center of the substrate, making it possible to process the outer periphery of the substrate to the desired width, as the chemical solution is scattered toward the outside of the substrate due to the rotation of the substrate.

[0059] However, in substrate processing apparatuses that hold substrates horizontally, it is difficult to reduce the footprint. Furthermore, they are forced to adopt a single-wafer configuration in which substrates are processed one by one, making it difficult to adopt a batch-type configuration in which multiple substrates are processed at once. This reduces the productivity of the substrate processing apparatus.

[0060] Furthermore, when removing a predetermined film from the outer periphery of a substrate, the processing time is increased relative to the target film thickness, taking into consideration the difference in film thickness within the surface of the substrate and between substrates, so as not to leave any remaining film. This also reduces the productivity of the substrate processing apparatus and increases the consumption of chemical solutions.

[0061] According to the substrate processing apparatus 1 of embodiment 1, multiple substrates W are rotated while being held and aligned horizontally at a predetermined interval, and a chemical liquid, a rinse liquid, and a drying fluid are respectively circulated through circulation grooves 21 to 23 arranged along the outer periphery of the multiple substrates W at the lower side of the multiple substrates W, in order from the upstream side in the direction of rotation of the multiple substrates W.

[0062] This reduces the installation area of ​​the substrate processing apparatus 1. Also, a batch-type substrate processing apparatus 1 can be easily configured, improving productivity. Furthermore, for example, removal of a predetermined film with a chemical solution, and cleaning and drying of the outer periphery of the substrate W can be performed all at once in one substrate processing apparatus 1, which also improves productivity.

[0063] According to the substrate processing apparatus 1 of embodiment 1, the direction in which the surface of the plurality of substrates W on which the predetermined film is formed faces is set as the forward direction, and the thickness of the predetermined film on the upper side of the first substrate W among the plurality of substrates W is measured. As described above, by processing the substrates W in an upright position, it is possible to clearly separate the portion of each substrate W that is processed with the chemical solution from the portion that has dried, and it is possible to measure the film thickness in the dried portion. Furthermore, since film thickness measurement can be performed without being obstructed by water droplets or the like, film thickness data can be obtained with high accuracy.

[0064] This allows the processing time with the chemical liquid to be determined based on the thickness of the predetermined film, thereby improving the productivity of the substrate processing apparatus 1 and reducing the consumption of the chemical liquid.

[0065] According to the substrate processing apparatus 1 of embodiment 1, the flow grooves 21 to 23 are configured to be able to change the radial positions of the substrates W relative to the substrates W. This makes it possible to precisely control the processing width of the outer periphery of the substrate W by changing the liquid level of the chemical solution relative to the substrate W. Furthermore, when a predetermined film formed in a ring shape on the outer periphery of the substrate W is eccentric with respect to the center position of the substrate W, for example, the processing width can be changed for each position on the outer periphery of the substrate W.

[0066] (Variation 1) Next, a configuration example of a substrate processing apparatus 1a according to Modification 1 of Embodiment 1 will be described with reference to Fig. 3. The substrate processing apparatus 1a according to Modification 1 differs from the above-described Embodiment 1 in that the processing width of the outer periphery of the substrate W is adjusted by changing the supply amount of the chemical solution.

[0067] Fig. 3 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1a according to Modification 1 of Embodiment 1. In Fig. 3, the same components as those in the above-described Embodiment 1 are denoted by the same reference numerals, and their description may be omitted.

[0068] As shown in FIG. 3, the substrate processing apparatus 1a includes a plurality of flow grooves 121 (121a, 121b, 121c, etc.) each corresponding to a plurality of substrates W (Wa, Wb, Wc, etc.) and each provided with a chemical liquid supply unit 141 (141a, 141b, 141c, etc.).

[0069] The chemical liquid supply unit 141 provided in the flow groove 121 is configured to be able to change the supply amount of the chemical liquid circulating in the flow groove 121 under the control of the control unit 160. The control unit 160 controls the chemical liquid supply unit 141 based on, for example, a film thickness measurement result by the film thickness meter 50, to change the supply amount of the chemical liquid to the flow groove 121. This changes the liquid level of the chemical liquid in the flow groove 121, making it possible to adjust the processing width of the outer periphery of the substrate W.

[0070] That is, by reducing the supply amount of the chemical liquid, the liquid level of the chemical liquid in the flow groove 121 is lowered, thereby narrowing the processing width of the outer periphery of the substrate W. On the other hand, by increasing the supply amount of the chemical liquid, the liquid level of the chemical liquid in the flow groove 121 is increased, thereby widening the processing width of the outer periphery of the substrate W.

[0071] As with the flow groove 121, the flow groove of Modification 1 through which the rinse liquid flows and the flow groove of Modification 1 through which the drying fluid flows may be provided with a rinse liquid supply unit capable of changing the amount of rinse liquid supplied and a fluid supply unit capable of changing the amount of drying fluid supplied, respectively.

[0072] Furthermore, similar to the above-described first embodiment, the flow groove 121 and the flow grooves for the rinsing liquid and drying fluid may be provided with a drive unit capable of driving them in the radial direction of the substrate W. In this case, the control unit 160 may adjust the processing width of the outer periphery of the substrate W by appropriately adjusting both the supply amounts of the chemical liquid, rinsing liquid, and drying fluid supplied to these flow grooves 121 etc. and the radial positions of these flow grooves 121 etc. with respect to the substrate W.

[0073] According to the substrate processing apparatus 1a of the first modification, the chemical liquid supply unit 141 is configured to adjust the supply amount of the chemical liquid to change the liquid level of the chemical liquid in the flow groove 121. With this configuration, the processing width of the outer periphery of the substrate W can also be adjusted.

[0074] In addition, the substrate processing apparatus 1a of the first modification has the same effects as the substrate processing apparatus 1 of the first embodiment described above.

[0075] (Variation 2) 4 and 5, a configuration example of substrate processing apparatuses 1b and 1c according to Modification 2 of Embodiment 1 will be described. The substrate processing apparatuses 1b and 1c according to Modification 2 differ from the above-described Embodiment 1 in that they have nozzles in the flow grooves.

[0076] 4 and 5 are schematic diagrams showing an example of the configuration of substrate processing apparatuses 1b and 1c according to Modification 2 of Embodiment 1. Each of FIGS. 4 and 5 shows an enlarged view of a flow groove 221, 321 through which the outer periphery of one substrate W passes. In FIGS. 4 and 5, the same components as those in the above-described Embodiment 1 are denoted by the same reference numerals, and their description may be omitted.

[0077] 4, the substrate processing apparatus 1b of the second modification includes a plurality of circulation grooves 221 each provided with a chemical liquid nozzle 221a, 221b for supplying a chemical liquid, the chemical liquid nozzles 221a, 221b corresponding to the plurality of substrates W, respectively. More specifically, the chemical liquid nozzles 221a, 221b are provided on the inner wall surface of the circulation groove 221.

[0078] In this case, it is preferable that the chemical solution nozzles 221a, 221b are provided on the inner wall surfaces on both sides of the flow groove 221 facing the front and back surfaces of the substrate W. This allows the target predetermined film to be treated with the chemical solution whether the target predetermined film is formed on either the front or back surface of the substrate W or on both surfaces.

[0079] These liquid chemical nozzles 221a, 221b are configured so that the direction of discharge of the liquid chemical can be changed, for example, by driving the tip portion in an up-down direction. Furthermore, each flow groove 221 is provided with driving units 231a, 231b that control these liquid chemical nozzles 221a, 221b, respectively.

[0080] Drive units 231a and 231b provided in flow channel 221 change the vertical orientation of chemical liquid nozzles 221a and 221b under the control of control unit 260, and change the discharge direction of the chemical liquid flowing through flow channel 221. Control unit 260 controls drive units 231a and 231b based on, for example, a film thickness measurement result obtained by film thickness meter 50, to change the vertical orientation of chemical liquid nozzles 221a and 221b. This makes it possible to adjust the processing width of the outer periphery of substrate W.

[0081] That is, by pointing the chemical liquid nozzles 221a, 221b downward, the chemical liquid is discharged closer to the edge of the substrate W, thereby narrowing the processing width of the outer periphery of the substrate W. Furthermore, by pointing the chemical liquid nozzles 221a, 221b upward, the chemical liquid is discharged closer to the inside of the substrate W, thereby widening the processing width of the outer periphery of the substrate W.

[0082] It is preferable that the driving units 231a, 231b be capable of independently controlling the chemical nozzles 221a, 221b on the front and back sides of the substrate W. This allows the directions of chemical solution ejection from the chemical nozzles 221a, 221b to be independently controlled, thereby making it possible to differentiate the processing widths of the outer peripheries of the front and back sides of the substrate W.

[0083] Furthermore, similar to the flow groove 221, a flow groove of Modification 2 through which the rinse liquid flows and a flow groove of Modification 2 through which the drying fluid flows may be provided with a rinse liquid nozzle capable of ejecting the rinse liquid and a fluid nozzle capable of ejecting the drying fluid, respectively.

[0084] 5, the substrate processing apparatus 1c of the second modification includes a plurality of flow grooves 321 each provided with chemical liquid nozzles 321a-321f that supply chemical liquids and correspond to a respective one of the substrates W. More specifically, the chemical liquid nozzles 321a-321f are provided on the inner wall surface of the flow groove 321.

[0085] In this case, it is preferable that the chemical solution nozzles 321a to 321f are provided on the inner wall surfaces on both sides of the flow groove 321 facing the front and back surfaces of the substrate W. That is, the chemical solution nozzles 321a to 321c are provided, for example, lined up from above to below on the inner wall surface of the flow groove 321 facing one surface of the substrate W. Furthermore, the chemical solution nozzles 321d to 321f are provided, for example, lined up from above to below on the inner wall surface of the flow groove 321 facing the other surface of the substrate W.

[0086] Each flow channel 321 is provided with a drive unit 331a that controls the chemical nozzles 321a to 321c that face one side of the substrate W, and a drive unit 331d that controls the chemical nozzles 321d to 321f that face the other side of the substrate W.

[0087] The drive unit 331a provided in the flow channel 321 controls at least one of the chemical nozzles 321a to 321c under the control of the control unit 360 to change the discharge height of the chemical solution flowing through the flow channel 321. The control unit 360 controls the drive unit 331a based on the film thickness measurement result by, for example, the film thickness meter 50, to discharge the chemical solution from at least one of the chemical nozzles 321a to 321c. This makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0088] That is, by discharging the chemical liquid from chemical liquid nozzle 321c, which is provided at a lower position among chemical liquid nozzles 321a to 321c, the chemical liquid is discharged closer to the edge of substrate W, thereby narrowing the processing width of the outer periphery of substrate W. Also, by discharging the chemical liquid from chemical liquid nozzle 321a, which is provided at a higher position among chemical liquid nozzles 321a to 321c, the chemical liquid is discharged closer to the inside of substrate W, thereby widening the processing width of the outer periphery of substrate W.

[0089] The drive unit 331d provided in the flow channel 321 controls at least one of the chemical liquid nozzles 321d to 321f under the control of the control unit 360 to change the discharge height of the chemical liquid to be caused to flow through the flow channel 321. The control unit 360 controls the drive unit 331d based on the film thickness measurement result by, for example, the film thickness meter 50, to discharge the chemical liquid from at least one of the chemical liquid nozzles 321d to 321f. This makes it possible to adjust the processing width of the outer periphery of the substrate W.

[0090] As with the flow groove 321, the flow groove of modified example 2 through which the rinse liquid flows and the flow groove of modified example 2 through which the drying fluid flows may be provided with a plurality of rinse liquid nozzles capable of ejecting the rinse liquid onto both sides of the substrate W, and a plurality of fluid nozzles capable of ejecting the drying fluid onto both sides of the substrate W, respectively.

[0091] Furthermore, similar to the above-described first embodiment, the flow grooves 221, 321 and the flow grooves for the rinsing liquid and drying fluid may be provided with a drive unit capable of driving them in the radial direction of the substrate W. In this case, the control units 260, 360 may adjust both the chemical liquid nozzles of these flow grooves 221, 321, etc. and the radial positions of these flow grooves 221, 321, etc. with respect to the substrate W, to adjust the processing width of the outer periphery of the substrate W.

[0092] According to substrate processing apparatus 1b of modified example 2, flow groove 221 has chemical liquid nozzles 221a and 221b provided on the inner wall of flow groove 221 and capable of changing the discharge direction of the chemical liquid up and down. Moreover, according to substrate processing apparatus 1c of modified example 2, flow groove 321 has a plurality of chemical liquid nozzles 321a to 321f provided side by side vertically on the inner wall of flow groove 321. With this configuration as well, the processing width of the outer periphery of substrate W can be adjusted.

[0093] In addition, the substrate processing apparatuses 1b and 1c of the second modification have the same effects as the substrate processing apparatus 1 of the first embodiment described above.

[0094] (Variation 3) Next, a configuration example of a substrate processing apparatus according to Modification 3 of Embodiment 1 will be described with reference to Fig. 6. In the substrate processing apparatus according to Modification 3, the shape of the flow grooves 421a to 421c differs from that of the above-described Embodiment 1.

[0095] Fig. 6 is a schematic diagram showing an example of the configuration of a substrate processing apparatus according to Modification 3 of Embodiment 1. Fig. 6 shows circulation grooves 421a to 421c through which the outer periphery of one substrate W passes. Note that in Fig. 6, the same components as those in the above-described Embodiment 1 are denoted by the same reference numerals, and their description may be omitted.

[0096] In the example shown in Fig. 6(a), the circulation groove 421a of Modification 3 has a U-shaped cross section. In the example shown in Fig. 6(b), the circulation groove 421b of Modification 3 has a V-shaped cross section. In the example shown in Fig. 6(c), the circulation groove 421c of Modification 3 has a rectangular cross section with an open upper end.

[0097] In this way, the flow grooves 421a to 421c may have any shape as long as they are capable of passing a chemical liquid through them to process the outer periphery of the substrate W. This also applies to the flow grooves through which the rinsing liquid passes and the flow grooves through which the drying fluid passes.

[0098] The substrate processing apparatus of the third modification provides the same effects as those of the substrate processing apparatus 1 of the first embodiment described above.

[0099] (Variation 4) Next, a configuration example of a substrate processing apparatus 1d according to Modification 4 of Embodiment 1 will be described with reference to Fig. 7. The substrate processing apparatus 1d according to Modification 4 differs from the above-described Embodiment 1 in that it includes a flow groove 521 shared by multiple substrates W.

[0100] Fig. 7 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1d according to Modification 4 of Embodiment 1. In Fig. 7, the same components as those in the above-described Embodiment 1 are denoted by the same reference numerals, and the description thereof may be omitted.

[0101] 7, the substrate processing apparatus 1d includes a wide circulation groove 521 that can immerse the outer peripheries of a plurality of substrates W arranged in a horizontal direction all at once. That is, the circulation groove 521 of the fourth modification is shared by a plurality of substrates W. Also, a chemical liquid supply unit 541 that supplies a chemical liquid to the circulation groove 521 is also provided, for example, only one for the circulation groove 521. The control unit 560 of the fourth modification controls the chemical liquid supply unit 541 to supply the chemical liquid to the circulation groove 521.

[0102] In addition, in the substrate processing apparatus 1d of variant example 4, there are provided one each of a flow groove for circulating a rinsing liquid, a flow groove for circulating a drying fluid, and a rinsing liquid supply unit and a fluid supply unit provided therein, and these may be shared among multiple substrates W.

[0103] The amounts of the chemical liquid, rinse liquid, and drying fluid supplied by the chemical liquid supply unit 541, rinse liquid supply unit, and fluid supply unit may be adjustable. Furthermore, the substrate processing apparatus 1d of Modification 4 may include a drive unit that moves the flow groove 521, etc. in the radial direction of the plurality of substrates W, as in the first embodiment, for example.

[0104] The substrate processing apparatus of the fourth modification provides the same effects as those of the substrate processing apparatus 1 of the first embodiment described above.

[0105] In the above-mentioned embodiment 1 and the like, rollers 11 and 12 are provided for each individual substrate W, but rollers 11 and 12 may extend across the width of multiple substrates W arranged horizontally and be shared among multiple substrates W.

[0106] (Variation 5) Next, a configuration example of a substrate processing apparatus 1e according to Modification 5 of Embodiment 1 will be described with reference to Fig. 8. The substrate processing apparatus 1e according to Modification 5 differs from the above-described Embodiment 1 in that it includes a plurality of flow grooves 621a, 621b through which the chemical solution flows.

[0107] Fig. 8 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 1e according to Modification 5 of Embodiment 1. In Fig. 8, the same components as those in the above-described Embodiment 1 are denoted by the same reference numerals, and the description thereof may be omitted.

[0108] 8, the substrate processing apparatus 1e includes a plurality of flow grooves 621a, 621b provided corresponding to the plurality of substrates W. A chemical liquid supply unit 631a for supplying a chemical liquid is provided in the flow groove 621a. A chemical liquid supply unit 631b for supplying a chemical liquid is provided in the flow groove 621b.

[0109] 8 shows an example in which the substrate processing apparatus 1e includes two circulation grooves 621a and 621b, each provided with a chemical solution supply unit 641a and 641b. However, three or more circulation grooves 621 may be provided. In this way, by increasing the number of circulation grooves 621 through which the chemical solution flows, the removal rate per rotation of the predetermined film formed on the outer periphery of the substrate W can be increased.

[0110] Furthermore, a plurality of flow grooves for circulating a rinsing liquid may be provided to increase the cleaning speed of the substrate W per rotation after treatment with the chemical liquid and to more reliably clean the substrate W. A plurality of flow grooves for circulating a drying fluid may be provided to increase the drying speed of the substrate W per rotation after cleaning and to more reliably dry the substrate W.

[0111] The supply amounts of the chemical liquid, the rinse liquid, and the drying fluid from the chemical liquid supply units 641a, 641b, the rinse liquid supply unit, and the fluid supply unit provided in the flow grooves 621a, 621b, etc. may be adjustable. The substrate processing apparatus 1e of Modification 5 may also include a drive unit that moves the flow grooves 621a, 621b, etc. in the radial direction of the plurality of substrates W, as in the first embodiment, for example.

[0112] According to the substrate processing apparatus of the fifth modification, a plurality of flow grooves 621a, 621b are provided for one substrate W. This makes it possible to increase the processing speed of the substrate W per rotation.

[0113] In addition, the substrate processing apparatus of the fifth modification has the same effects as the substrate processing apparatus 1 of the first embodiment described above.

[0114] [Embodiment 2] Hereinafter, the second embodiment will be described in detail with reference to the drawings. The second embodiment differs from the first embodiment in that the substrate processing apparatus is a single-sheet processing apparatus.

[0115] In the above-described first embodiment and the like, the substrates W are set up vertically, so that the substrate processing apparatus 1 is configured as a batch type. However, for example, when more precise removal processing of a predetermined film is required, a single-wafer type configuration may be adopted, and film thickness measurement may be performed for each individual substrate W.

[0116] An example of a substrate processing apparatus employing a single-wafer type configuration will be described below.

[0117] Fig. 9 is a schematic diagram showing an example of the configuration of a substrate processing apparatus 2 according to embodiment 2. Fig. 9(a) is a side view of the inside of the processing chamber of the substrate processing apparatus 2, and Fig. 9(b) is a front view of the inside of the processing chamber of the substrate processing apparatus 2. Figs. 9(c) and 9(d) are side views of the inside of the processing chamber of the substrate processing apparatus 2, which holds the substrate W at an angle.

[0118] In FIG. 9, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0119] As shown in FIGS. 9(a) and 9(b), the substrate processing apparatus 2 of the second embodiment includes a holder 711, a chemical tank 721, a nozzle 724, a drive unit 731, shielding plates 771 and 772, a film thickness meter 50, and a control unit 760.

[0120] The holder 711 adheres to the back surface of the substrate W and supports it, holding the substrate W in a vertically standing position. The back surface of the substrate W is the surface opposite to the front surface on which the semiconductor device is provided. The holder 711 is configured to be able to move the held substrate W up and down and rotate it in a circumferential direction. The rotation speed of the substrate W can be, for example, 1000 rpm.

[0121] The holder 711 is provided with a drive unit 731 for vertically moving and rotating the holder 711, a pump (not shown) for sucking the substrate W by the holder 711, and the like.

[0122] A chemical tank 721 is provided below the substrate W held by the holder 711, and stores a chemical solution for removing a predetermined film (not shown) from the substrate W. The chemical tank 721 includes, for example, an inlet 721n through which the chemical solution flows in on one side of opposing side surfaces, and an outlet 721t through which the chemical solution flows out on the other side.

[0123] While the substrate W is being processed, the chemical liquid flows into the chemical liquid tank 721 from the inlet 721n by a pump (not shown) and is discharged from the outlet 721t. This causes a flow of the chemical liquid in the chemical liquid tank 721, increasing the rate at which a predetermined film is removed from the substrate W. The chemical liquid discharged from the outlet 721t may be circulated again from the inlet 721n to the chemical liquid tank 721 and used repeatedly.

[0124] Shielding plates 771 and 772 are provided around the substrate W above the chemical liquid tank 721. The shielding plates 771 and 772 are provided on one side and the other side of the substrate W, respectively, with a very small gap between them. This prevents the chemical liquid stored in the chemical liquid tank 721 from scattering toward the upper side of the substrate W. Note that the shielding plates 771 and 772 may be integrally formed with a slit in the center through which the substrate W is inserted.

[0125] A nozzle 724 is provided near the surface of the substrate W above these shielding plates 771, 772, downstream in the direction of rotation of the substrate W relative to the chemical tank 721. The nozzle 724 is connected to a supply source of a rinsing liquid and a supply source of a drying fluid (not shown), and the rinsing liquid and the drying fluid are sprayed from these supply sources onto the outer periphery of the substrate W after chemical processing, as appropriate.

[0126] It is preferable that the angle of the nozzle 724 with respect to the substrate W is adjusted so that the rinse liquid and drying fluid are sprayed from the inside to the outside of the substrate W. By adjusting the spray direction of the rinse liquid and drying fluid in this manner, the chemical liquid, rinse liquid, etc. are prevented from spreading toward the inside of the substrate W.

[0127] As described above, the outer periphery of the substrate W after chemical processing is cleaned and dried by the nozzle 724. At this time, the nozzle 724 that sprays the rinsing liquid and drying fluid may be provided on the back surface side of the substrate W. This allows the outer periphery on the back surface side of the substrate W to also be cleaned and dried.

[0128] The film thickness meter 50 irradiates electromagnetic waves Lm, such as X-rays, to a measurement point Pm on the upper side of the substrate W to measure the film thickness of a predetermined film formed on the outer periphery of the substrate W. In the substrate processing apparatus 2 of embodiment 2 as well, the film thickness meter 50 may measure the film thickness at any position on the outer periphery of the substrate W while it is passing between the downstream side of the nozzle 724 and the upstream end of the chemical tank 721.

[0129] During this time, the outer periphery of the substrate W is in a dry state, and the thickness of the predetermined film can be measured with high accuracy without being hindered by droplets of the chemical or rinse liquid, etc. In other words, it is sufficient that the substrate W is in a dry state so that the measurement accuracy by the film thickness meter 50 can be sufficiently obtained.

[0130] In addition, when a specified film on the back side of the substrate W is to be processed, or when more precise processing is required for the specified film on the back side, a film thickness meter 50 may be provided at a position facing the back side of the substrate W, so that the film thickness of the specified film on the back side can be measured.

[0131] The control unit 760 controls each part of the substrate processing apparatus 2, such as the holding unit 711, the nozzle 724, the driving unit 731, the shielding plates 771 and 772, the film thickness meter 50, and various pumps (not shown). At this time, similar to the control unit 60 in the above-described first embodiment, the control unit 760 detects the processing time with the chemical solution or the end point of the chemical solution processing by various methods based on the measurement results of the film thickness meter 50, and controls each part of the substrate processing apparatus 2 so that the desired chemical solution processing is performed, for example by controlling the amount of immersion of the substrate W in the chemical solution by the holding unit 711.

[0132] In the substrate processing apparatus 2 of the second embodiment, when the processing of the substrate W is completed, some chemical liquid or rinse liquid may remain on the substrate W. In this case, as described in the first embodiment, these processes can be completed by a separate cleaning apparatus or the like.

[0133] As shown in FIGS. 9(c) and 9(d), the substrate processing apparatus 2 of the second embodiment can hold the substrate W not only in a vertically standing state but also in an inclined state.

[0134] 9(c), the drive unit 731 can adjust the angle at which the substrate W is held by the holder 711 under the control of the control unit 760, for example, to hold the substrate W in a state in which the substrate W is tilted from a vertical position toward the front surface side. By tilting the substrate W so that the front surface side faces slightly downward, it is possible to widen the processing width of the outer periphery of the front surface side compared to the back surface side, for example. It is also possible to prevent the chemical solution from flowing around to the back surface side.

[0135] In this way, when the main surface to be processed is the front surface side of the substrate W, the substrate W can be processed with the chemical solution while tilted toward the front surface side.

[0136] 9(d), the drive unit 731 can adjust the angle at which the substrate W is held by the holder 711 under the control of the control unit 760, for example, to hold the substrate W in a state in which the substrate W is tilted from the vertical position toward the back surface side. By tilting the substrate W so that the back surface side faces slightly downward, it is possible to widen the processing width of the outer periphery of the back surface side compared to the front surface side, for example. It is also possible to prevent the chemical solution from flowing around to the front surface side.

[0137] In this way, when the main surface to be processed is the backside of the substrate W, the substrate W can be processed with the chemical solution while tilted toward the backside.

[0138] In the above configuration, the control unit 760 can control the drive unit 731 based on the film thickness measurement result of a predetermined film by the film thickness meter 50, for example, to adjust the holding angle of the substrate W by the holder 711.

[0139] According to the substrate processing apparatus 2 of embodiment 2, the substrate W, with its back surface held, is rotated in a circumferential direction so that the surface direction of the substrate W having a predetermined film formed on its outer periphery intersects the horizontal direction, and one end of the substrate W is immersed in a chemical tank 721 containing a chemical liquid. Downstream of the chemical tank 721, a rinse liquid and a fluid for drying the rinse liquid are supplied to the outer periphery of the substrate W by a nozzle 724.

[0140] This reduces the installation area of ​​the substrate processing apparatus 2. Furthermore, since removal of a predetermined film with a chemical solution, cleaning of the outer periphery of the substrate W, and drying can be performed all at once, the productivity of the substrate processing apparatus 2 can be improved.

[0141] According to the substrate processing apparatus 2 of the second embodiment, the thickness of the predetermined film on the outer periphery of the substrate W is measured by the film thickness meter 50 downstream of the nozzle 724. In this way, by processing the substrate W in an upright position, the thickness of the predetermined film can be measured in a dry region of the substrate W, and therefore film thickness data can be obtained with high accuracy.

[0142] This allows the processing time with the chemical liquid to be determined based on the film thickness of the predetermined film, thereby reducing excess processing time and improving the productivity of the substrate processing apparatus 1. Furthermore, the consumption of the chemical liquid can be reduced.

[0143] According to the substrate processing apparatus 2 of embodiment 2, the holder 711 is configured to be able to hold the substrate W in a state in which the substrate W is tilted from a vertical state toward its back surface, and in a state in which the substrate W is tilted from a vertical state toward its front surface. This allows substrate processing to be performed with either the front surface or the back surface of the substrate W as the main processing target surface. In addition, it is possible to prevent the chemical solution from flowing around to the surface opposite to the tilted direction of the substrate W.

[0144] According to the substrate processing apparatus 2 of the second embodiment, the chemical tank 721 has an inlet 721n through which the chemical flows in and an outlet 721t through which the chemical flows out, thereby enabling the chemical to circulate within the chemical tank 721 and increasing the rate at which a predetermined film is removed from the substrate W.

[0145] In addition, the substrate processing apparatus 2 of the second embodiment has the same effects as the substrate processing apparatus 1 of the first embodiment described above.

[0146] (Variation 1) Next, a substrate processing apparatus according to a first modification of the second embodiment will be described with reference to Fig. 10. The substrate processing apparatus according to the first modification differs from the second embodiment in that it includes a suction nozzle 725.

[0147] Fig. 10 is a schematic diagram showing an example of the configuration of a nozzle 724 and a suction nozzle 725 included in a substrate processing apparatus according to Modification 1 of Embodiment 2. In Fig. 10, the same components as those in the above-described Embodiment 2 are denoted by the same reference numerals, and description thereof will be omitted.

[0148] 10 , the substrate processing apparatus of Modification 1 includes a suction nozzle 725 near a nozzle 724 that sprays a rinsing liquid and a drying fluid onto the substrate W. The suction nozzle 725 is connected to, for example, a pump (not shown), and sucks in the rinsing liquid and the drying fluid sprayed onto the substrate W from the nozzle 724, as well as excess rinsing liquid and drying fluid discharged from the nozzle 724.

[0149] The substrate processing apparatus of the first modification includes a suction nozzle 725 that sucks the rinsing liquid and the drying fluid. This allows the used or excess rinsing liquid and the drying fluid to be sucked, thereby quickly cleaning and drying the substrate W.

[0150] In addition, the substrate processing apparatus of Modification 1 has the same effects as the substrate processing apparatus 2 of the second embodiment described above.

[0151] (Variation 2) Next, a substrate processing apparatus according to Modification 2 of Embodiment 2 will be described with reference to Figure 11. The substrate processing apparatus according to Modification 2 differs from the above-described Embodiment 2 in that it includes contact-type nozzles 824a and 824b.

[0152] Fig. 11 is a schematic diagram showing an example of the configuration of nozzles 824a, 824b included in a substrate processing apparatus according to Modification 2 of Embodiment 2. In Fig. 11, the same components as those in the above-described Embodiment 2 are denoted by the same reference numerals, and description thereof will be omitted.

[0153] 11(a), the substrate processing apparatus of Modification 2 includes a nozzle 824a having a plurality of needle-like members 824n at its tip. Such a nozzle 824a is obtained by configuring the tip of the nozzle 824a in a needle shape having a minute diameter of, for example, 1 mm or less. These needle-like members 824n are preferably made of a flexible material.

[0154] In the substrate processing apparatus of Modification 2, the nozzle 824a sprays the rinse liquid and the drying fluid appropriately from the needle-shaped member 824n at the tip thereof in a state where the needle-shaped member 824n is in contact with the bevel of the substrate W. As a result, the rinse liquid and the drying fluid are supplied from the bevel to the outer periphery of the substrate W, and the outer periphery of the substrate W is cleaned and dried.

[0155] In this way, the needle-like members 824n are brought into direct contact with the substrate W to perform processing, thereby improving the cleaning speed and drying speed of the substrate W. Furthermore, as described above, the needle-like members 824n have flexibility, which prevents the substrate W from being damaged when they come into contact with the substrate W.

[0156] 11(b), the substrate processing apparatus of Modification 2 includes a nozzle 824b having a sponge-like member 824s at its tip end. Such a nozzle 824b can be obtained by providing a sponge-shaped resin or the like at the tip end of the nozzle 824b.

[0157] In the substrate processing apparatus of Modification 2, the nozzle 824b appropriately infiltrates the rinsing liquid and drying fluid into the sponge-like member 824s at the tip thereof while keeping the sponge-like member 824s in contact with the bevel of the substrate W. As a result, the rinsing liquid and drying fluid seep out of the sponge-like member 824s and are supplied to the outer periphery of the substrate W, thereby cleaning and drying the outer periphery of the substrate W.

[0158] In this way, the needle-like members 824n are brought into direct contact with the substrate W to perform processing, thereby improving the cleaning and drying speeds of the substrate W. Furthermore, by having the sponge-like members 824s at the tip portions, damage to the substrate W when the needle-like members 824n come into contact with the substrate W is suppressed.

[0159] According to the substrate processing apparatus of the second modification, the nozzles 824a and 824b have at their tip ends needle-like members 824n or sponge-like members 824s that come into contact with the substrate W. This allows the substrate W to be quickly cleaned and dried.

[0160] In addition, the substrate processing apparatus of Modification 2 has the same effects as the substrate processing apparatus 2 of Embodiment 2 described above.

[0161] (Variation 3) Next, a substrate processing apparatus 2c according to a third modification of the second embodiment will be described with reference to Figure 12. The substrate processing apparatus 2c according to the third modification differs from the second embodiment in that it includes a plurality of nozzles.

[0162] Fig. 12 is a schematic diagram showing an example of the configuration of a plurality of nozzles provided in a substrate processing apparatus according to Modification 3 of Embodiment 2. Fig. 12(a) is a side view of the inside of the processing chamber of the substrate processing apparatus 2c, and Fig. 12(b) is a front view of the inside of the processing chamber of the substrate processing apparatus 2c. In Fig. 12, the same components as those in the above-described Embodiment 2 are denoted by the same reference numerals, and their description will be omitted.

[0163] 12, the substrate processing apparatus 2c of Modification 3 includes a rinse liquid nozzle 922 and a fluid nozzle 923 that independently spray a rinse liquid and a drying fluid onto the substrate W, respectively. In addition to these, the suction nozzle 725 of Modification 1 described above may be provided near these nozzles. Alternatively, the suction nozzle 725 described above may be provided near each of the rinse liquid nozzle 922 and the fluid nozzle 923.

[0164] According to the substrate processing apparatus 2c of the third modification, the nozzles provided in the substrate processing apparatus 2c include a rinse liquid nozzle 922 that supplies a rinse liquid to the outer periphery of the substrate W, and a fluid nozzle 923 that supplies a drying fluid to the outer periphery of the substrate W. By providing the rinse liquid nozzle 922 and the fluid nozzle 923 independently in this manner, the substrate W can be cleaned and dried more precisely.

[0165] The substrate processing apparatus 2c of the third modification may include a chemical nozzle that sprays the chemical onto the substrate W, instead of the chemical tank 721. Also, a suction nozzle that sucks the chemical may be further provided near the chemical nozzle. This allows the chemical tank 721 to be eliminated, and the substrate processing apparatus 2c to be configured more compactly.

[0166] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims. [Explanation of symbols]

[0167] 1, 1a to 1e, 2, 2c...substrate processing apparatus, 11, 12...roller, 21, 22, 23, 121, 221, 321, 421a to 421c, 521, 621a, 621b...flow groove, 31, 32, 33, 231, 331...drive unit. 41,141,541,641a,641b...chemical liquid supply unit, 42...rinse liquid supply unit, 43...fluid supply unit, 50...film thickness meter, 60,160-360,560,760...control unit, 70...semiconductor device, 72...titanium nitride film, 73...tungsten film, 221a,221b,321a-321c...chemical liquid nozzle, 711...holding unit, 721...chemical liquid tank, 731...drive unit, 724,725,824a,824b...nozzle, 922...rinse liquid nozzle, 923...fluid nozzle, W...substrate.

Claims

1. a holding unit that holds a rear surface of a substrate having a predetermined film formed on an outer periphery thereof so that a surface direction of the substrate intersects with a horizontal direction, and rotates the substrate in a circumferential direction; a chemical tank in which a chemical solution for removing the predetermined film is stored and in which one end side of the substrate is immersed; a nozzle downstream of the chemical tank for supplying a rinse liquid and a fluid for drying the rinse liquid to an outer periphery of the substrate; a film thickness meter that is located downstream of the nozzle and that measures the film thickness of the predetermined film at the outer periphery of the substrate, Substrate processing equipment.

2. a control unit that controls the holding unit, the nozzle, and the film thickness meter, The control unit determining a timing to end immersion of the substrate in the chemical solution based on a measurement result of the thickness of the predetermined film from the film thickness meter; The substrate processing apparatus according to claim 1 .

3. The holding portion is The position of the substrate is configured to be changeable in a radial direction, The control unit and changing a radial position of the substrate by the holder based on the measurement result to adjust the amount of sinking of the substrate into the chemical solution. The substrate processing apparatus according to claim 2 .

4. The holding portion is The substrate holder is configured to be able to hold the substrate in a state where the substrate is tilted from a vertical state toward its back surface, and in a state where the substrate is tilted from a vertical state toward its front surface. The substrate processing apparatus according to claim 3 .

5. The control unit and changing an angle of the surface direction of the substrate by the holding unit based on the measurement result, thereby adjusting the amount of sinking of the substrate into the chemical solution. The substrate processing apparatus according to claim 4 .

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