Light-emitting device and electronic device

Abstract

A light emitting device is provided that can reduce the possibility of electrical wiring breaking and high resistance. [Solution] A light-emitting device including: a first laminate having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a first light-emitting layer; a first insulating layer provided on a side of the first laminate; a first metal layer provided on the first insulating layer and located to the side of the first laminate; a first electrode provided between the substrate and the first laminate and electrically connected to the first semiconductor layer; a second electrode provided on the side of the first laminate opposite the first electrode and electrically connected to the second semiconductor layer; a first transparent layer provided on the side of the second electrode opposite the first laminate; a first lens provided on the first transparent layer opposite the second electrode and overlapping the first light-emitting layer in a planar view; and a metallic reflective member provided to the side of the first lens and the first transparent layer, wherein the reflective member is electrically connected to the second electrode.

Description

[Technical Field]

[0001] The present invention relates to a light-emitting device and an electronic device. [Background technology]

[0002] Light emitting elements such as LEDs (Light Emitting Diodes) are used as light sources for display devices and the like.

[0003] For example, Patent Document 1 describes an image display element in which micro light-emitting elements are arranged in an array. The micro light-emitting element is composed of an excitation light-emitting element that generates excitation light, a reflecting wall surrounding the excitation light-emitting element, and a wavelength conversion material arranged inside the reflecting wall.

[0004] The excitation light emitting element is formed by dividing a nitride semiconductor layer to form a main body, depositing a transparent insulating film that covers all surfaces of the main body except the bottom, opening a contact hole at the top of the main body, and depositing a transparent electrode on the entire surface.

[0005] The reflective wall is formed by forming a base material that will serve as the wall so as to surround the main body, depositing a reflective film over the entire surface, and then using photolithography and etching techniques to remove the reflective film that covers the top and side surfaces of the main body. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent Publication No. 2021-82687 Summary of the Invention [Problem to be solved by the invention]

[0007] However, in the image display element described in Patent Document 1, when the reflective material film covering the top and side surfaces of the main body is removed by etching, the transparent electrodes are etched, which can result in disconnections or high resistance. [Means for solving the problem]

[0008] One aspect of the light emitting device according to the present invention is A substrate; a first stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first insulating layer provided on a side surface of the first laminate; a first metal layer provided on the first insulating layer and positioned on a side of the first laminate; a first electrode provided between the substrate and the first stacked body and electrically connected to the first semiconductor layer; a second electrode provided on the opposite side of the first stack to the first electrode and electrically connected to the second semiconductor layer; a first transparent layer provided on the second electrode opposite to the first stacked body; a first lens provided on the opposite side of the first transparent layer from the second electrode and overlapping the first light-emitting layer in a plan view; a metallic reflecting member provided on each side of the first lens and the first transparent layer; Including, The reflecting member is electrically connected to the second electrode.

[0009] One aspect of the electronic device according to the present invention is The light emitting device has one aspect. [Brief explanation of the drawings]

[0010] [Figure 1] FIG. 1 is a cross-sectional view schematically showing a light emitting device according to a first embodiment. [Figure 2] FIG. 1 is a plan view schematically showing a light emitting device according to a first embodiment. [Figure 3] FIG. 1 is a plan view schematically showing a light emitting device according to a first embodiment. [Figure 4] FIG. 1 is a plan view schematically showing a light emitting device according to a first embodiment. [Figure 5]FIG. 1 is a cross-sectional view schematically showing a light emitting device according to a first embodiment. [Figure 6] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 7] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 8] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 9] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 10] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 11] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 12] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 13] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 14] 3A to 3C are cross-sectional views schematically showing the manufacturing process of the light emitting device according to the first embodiment. [Figure 15] FIG. 10 is a cross-sectional view schematically showing a light emitting device according to a second embodiment. [Figure 16] FIG. 10 is a diagram schematically showing a projector according to a third embodiment. [Figure 17] FIG. 10 is a plan view schematically showing a display according to a fourth embodiment. [Figure 18] FIG. 10 is a cross-sectional view schematically showing a display according to a fourth embodiment. [Figure 19] FIG. 10 is a perspective view schematically showing a head-mounted display according to a fifth embodiment. [Figure 20] FIG. 10 is a diagram schematically illustrating an image forming device and a light guiding device of a head-mounted display according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0011] Preferred embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below do not unduly limit the content of the present invention as defined in the claims. Furthermore, not all of the configurations described below are necessarily essential components of the present invention.

[0012] 1. First embodiment 1.1. Light-emitting device First, the light emitting device according to the first embodiment will be described with reference to the drawings. Fig. 1 is a cross-sectional view schematically showing the light emitting device 100 according to the first embodiment. Fig. 2 is a plan view schematically showing the light emitting device 100 according to the first embodiment. Fig. 1 is a cross-sectional view taken along line II in Fig. 2.

[0013] 1 and 2, the light-emitting device 100 includes, for example, a substrate 10, a laminate 20, a p-electrode 30, an n-electrode 32, an insulating layer 40, a metal layer 50, an interlayer insulating layer 60, a transparent layer 70, a reflective member 80, and a lens 90. The laminate 20, the p-electrode 30, the n-electrode 32, the insulating layer 40, and the metal layer 50 constitute a light-emitting element 102. The light-emitting element 102 is an LED. For convenience, FIG. 1 omits illustration of components other than the first tapered portion 20a of the laminate 20 and the p-electrode 30, and illustrates the light-emitting surface 92 of the lens 90 in a see-through manner.

[0014] 1, the substrate 10 has, for example, a base 12 and a drive circuit 14. The base 12 has, for example, insulating properties. The drive circuit 14 drives the light-emitting element 102. The drive circuit 14 is configured to include, for example, an IC (Integrated Circuit).

[0015] Light-emitting elements 102 are mounted on the substrate 10. The light-emitting elements 102 are, for example, junction-down mounted. For example, a plurality of light-emitting elements 102 are provided. In the example shown in FIG. 2, the plurality of light-emitting elements 102 are arranged in a matrix in a planar view. In the example shown in FIG. 1, a first light-emitting element 102a and a second light-emitting element 102b are provided as the light-emitting elements 102. The first light-emitting element 102a and the second light-emitting element 102b are adjacent to each other. Note that the "planar view" refers to the case when viewed from the stacking direction of the p-type semiconductor layer 22 and the light-emitting layer 24 of the stacked body 20 (hereinafter also simply referred to as the "stacking direction").

[0016] The laminate 20 is provided between the p-electrode 30 and the n-electrode 32. The laminate 20 has a first tapered portion 20a having a tapered shape whose width increases from the p-electrode 30 side toward the n-electrode 32 side. The width of the first tapered portion 20a gradually increases from the p-electrode 30 side toward the n-electrode 32 side. In the illustrated example, the shape of the first tapered portion 20a is trapezoidal. Note that the width refers to the size in a direction perpendicular to the stacking direction. The side surface 21 of the first tapered portion 20a is inclined with respect to the stacking direction. The side surface 21 of the first tapered portion 20a constitutes the side surface of the laminate 20.

[0017] The stacked body 20 includes, for example, a p-type semiconductor layer 22, a light emitting layer 24, an n-type semiconductor layer 26, and a buffer layer 28. The p-type semiconductor layer 22, the light emitting layer 24, the n-type semiconductor layer 26, and parts of the buffer layer 28 form a first tapered section 20a. The p-type semiconductor layer 22, the light emitting layer 24, the n-type semiconductor layer 26, and the buffer layer 28 are, for example, Group III nitride semiconductors and have a wurtzite crystal structure.

[0018] The p-type semiconductor layer 22 is provided on the p-electrode 30. The p-type semiconductor layer 22 is provided between the p-electrode 30 and the light-emitting layer 24. The p-type semiconductor layer 22 has a first conductivity type. The p-type semiconductor layer 22 is, for example, a p-type GaN layer doped with Mg.

[0019] The light emitting layer 24 is provided on the p-type semiconductor layer 22. The light emitting layer 24 is provided between the p-type semiconductor layer 22 and the n-type semiconductor layer 26. The light emitting layer 24 has i-type conductivity, which means that it is not intentionally doped with impurities. The light emitting layer 24 generates light when a current is injected into it. The light emitting layer 24 has, for example, a well layer and a barrier layer. The well layer and the barrier layer are i-type semiconductor layers. The well layer is, for example, an InGaN layer. The barrier layer is, for example, a GaN layer. The light emitting layer 24 has an MQW (Multiple Quantum Well) structure composed of the well layer and the barrier layer.

[0020] There is no particular limitation on the number of well layers and barrier layers that make up the light-emitting layer 24. For example, only one well layer may be provided, in which case the light-emitting layer 24 has an SQW (Single Quantum Well) structure.

[0021] The n-type semiconductor layer 26 is provided on the light emitting layer 24. The n-type semiconductor layer 26 is provided between the light emitting layer 24 and the n-electrode 32. In the illustrated example, the size of the n-type semiconductor layer 26 in the stacking direction is larger than the size of the p-type semiconductor layer 22 in the stacking direction. The n-type semiconductor layer 26 has a second conductivity type different from the first conductivity type. The n-type semiconductor layer 26 is, for example, an n-type GaN layer doped with Si.

[0022] The buffer layer 28 is provided on the n-type semiconductor layer 26. The buffer layer 28 is provided between the n-type semiconductor layer 26 and the n-electrode 32. The buffer layers 28 of adjacent light-emitting elements 102 are continuous. In the example shown in the figure, the buffer layer 28 of the first light-emitting element 102a and the buffer layer 28 of the second light-emitting element 102b are continuous. The material of the buffer layer 28 is, for example, the same as the material of the n-type semiconductor layer 26.

[0023] The buffer layer 28 is in contact with the n-electrode 32. A plurality of protrusions 29 are provided on the contact surface of the buffer layer 28 with the n-electrode 32. The plurality of protrusions 29 are, for example, arranged periodically. The height of the protrusions 29 is, for example, 400 nm or less. The distance between the tips of adjacent protrusions 29 is, for example, 230 nm or less. The plurality of protrusions 29 may form a moth-eye structure. The plurality of protrusions 29 can smooth the change in refractive index at the interface between the buffer layer 28 and the n-electrode 32 in the direction from the buffer layer 28 toward the n-electrode 32. This can reduce light reflected at the interface between the buffer layer 28 and the n-electrode 32. Although not shown, the plurality of protrusions 29 may also be arranged randomly.

[0024] In light-emitting device 100, a p-type semiconductor layer 22, an i-type light-emitting layer 24, and an n-type semiconductor layer 26 form a p-i-n diode. In light-emitting device 100, when a forward bias voltage of the p-i-n diode is applied between p-electrode 30 and n-electrode 32, a current is injected into light-emitting layer 24, causing recombination of electrons and holes in light-emitting layer 24. This recombination causes light to be emitted from light-emitting layer 24.

[0025] The p-electrode 30 is provided between the substrate 10 and the stacked body 20. In the illustrated example, the p-electrode 30 is provided between the substrate 10 and the p-type semiconductor layer 22. The p-electrode 30 is electrically connected to the p-type semiconductor layer 22. The p-type semiconductor layer 22 may be in ohmic contact with the p-electrode 30. The p-electrode 30 is formed, for example, by stacking a Pd layer, a Pt layer, and an Au layer in this order from the p-type semiconductor layer 22 side. The p-electrode 30 reflects light generated in the light-emitting layer 24 toward the n-electrode 32 side.

[0026] The p-electrode 30 is one of the electrodes for injecting a current into the light-emitting layer 24. For example, a potential of a data signal is applied to the p-electrode 30 from the drive circuit 14. In the plurality of light-emitting elements 102, the p-electrodes 30 are, for example, spaced apart from each other.

[0027] The n-electrode 32 is provided on the opposite side of the stacked body 20 to the p-electrode 30. The n-electrode 32 is provided on the buffer layer 28. The n-electrode 32 is provided between the buffer layer 28 and the transparent layer 70. The n-electrode 32 is disposed opposite the substrate 10. The n-electrode 32 is electrically connected to the n-type semiconductor layer 26 via the buffer layer 28. The buffer layer 28 may be in ohmic contact with the n-electrode 32. The n-electrode 32 transmits light generated in the light-emitting layer 24. The light generated in the light-emitting layer 24 is emitted from the n-electrode 32 side. The material of the n-electrode 32 is, for example, ITO (Indium Tin Oxide).

[0028] The n-electrode 32 is the other electrode for injecting a current into the light-emitting layer 24. A constant potential, for example, is applied to the n-electrode 32. A ground potential may also be applied to the n-electrode 32. In the multiple light-emitting elements 102, the n-electrode 32 is, for example, a common electrode. In the illustrated example, the n-electrode 32 of the first light-emitting element 102a and the n-electrode 32 of the second light-emitting element 102b are continuous.

[0029] The insulating layer 40 covers the stacked body 20. The insulating layer 40 is provided on the side surface 21 of the first tapered portion 20a. In the illustrated example, the insulating layer 40 is further provided on the lower surface of the buffer layer 28. The insulating layers 40 of adjacent light-emitting elements 102 are continuous. In the illustrated example, the insulating layer 40 of the first light-emitting element 102a and the insulating layer 40 of the second light-emitting element 102b are continuous. The insulating layer 40 surrounds the stacked body 20 in a planar view. The insulating layer 40 transmits light generated in the light-emitting layer 24. The insulating layer 40 is, for example, a SiO2 layer.

[0030] A first contact hole 42 is formed in the insulating layer 40. The first contact hole 42 overlaps with the p-electrode 30 in plan view. The first contact hole 42 exposes the p-electrode 30.

[0031] The metal layer 50 is provided on the insulating layer 40. The metal layer 50 is located on a side of the stacked body 20. In the illustrated example, the metal layer 50 is further provided in the first contact hole 42. The metal layer 50 is in contact with the p-electrode 30. In adjacent light-emitting elements 102, the metal layers 50 are spaced apart from each other. The metal layer 50 surrounds the stacked body 20 in a planar view. The metal layer 50 is, for example, an Au layer or an Al layer. The metal layer 50 reflects light generated in the light-emitting layer 24 toward the stacked body 20.

[0032] The interlayer insulating layer 60 covers the light emitting element 102. The interlayer insulating layer 60 surrounds the first tapered portion 20a in a plan view. The interlayer insulating layer 60 is provided between the substrate 10 and the n-electrode 32. The interlayer insulating layer 60 is, for example, a SiO2 layer.

[0033] A second contact hole 62 is formed in the interlayer insulating layer 60. The second contact hole 62 overlaps with the first contact hole 42 in a plan view. The second contact hole 62 exposes the metal layer 50. The metal layer 50 exposed by the second contact hole 62 is electrically connected to the drive circuit 14 via a contact 64. The contact 64 has, for example, a first portion 64a surrounded by the interlayer insulating layer 60 and a second portion 64b surrounded by the base 12 in a plan view. The material of the contact 64 is, for example, Cu.

[0034] The transparent layer 70 is provided on the side of the n-electrode 32 opposite the stack 20. The transparent layer 70 is provided on the n-electrode 32. The transparent layer 70 is provided between the n-electrode 32 and the lens 90. The transparent layer 70 transmits light generated in the light-emitting layer 24. The thickness of the transparent layer 70 is, for example, 0.5 μm or more and 2.0 μm or less, and preferably 0.7 μm or more and 1.5 μm or less. If the thickness of the transparent layer 70 is 0.5 μm or more, it can function as an etching stopper when etching the reflective member 80. If the thickness of the transparent layer 70 is 2.0 μm or less, the light generated in the light-emitting layer 24 can be efficiently incident on the lens 90.

[0035] The transparent layer 70 may be insulating. When the transparent layer 70 is insulating, the transparent layer 70 is, for example, a SiO layer, a SiON layer, or a SiN layer. The transparent layer 70 may be conductive. When the transparent layer 70 is conductive, the transparent layer 70 is, for example, an IZO (Indium Zinc Oxide) layer or an ITO layer.

[0036] A third contact hole 72 is formed in the transparent layer 70. The third contact hole 72 exposes the n-electrode 32. The reflective member 80 is in contact with the n-electrode 32 through the third contact hole 72. In the example shown in FIG. 2, the third contact hole 72 has multiple first extension portions 72a extending in a first direction and multiple second extension portions 72b extending in a second direction perpendicular to the first direction. In a plan view, the first tapered portion 20a and the p-electrode 30 are surrounded by the third contact hole 72. In the example shown in the figure, the width of an intersection 72c between the first extension portion 72a and the second extension portion 72b is the same as the widths of the extension portions 72a and 72b. As shown in FIG. 3, the intersection 72c may be wider than the widths of the extension portions 72a and 72b. This reduces the contact resistance between the n-electrode 32 and the reflective member 80. As shown in FIG. 4, the intersection 72c may have an arc corresponding to the shape of the exit surface 92 of the lens 90.

[0037] As shown in FIG. 1 , the reflective member 80 is provided on the n-electrode 32 and the transparent layer 70. The reflective member 80 is provided on the side of the lens 90 and the transparent layer 70. The reflective member 80 surrounds the lens 90 in a planar view. The reflective member 80 is provided so as to be in contact with the third contact hole 72. The reflective member 80 is electrically connected to the n-electrode 32 at the third contact hole 72. The reflective member 80 does not overlap with the light-emitting layer 24 in a planar view. The reflective member 80 reflects light generated in the light-emitting layer 24 toward an emission surface 92 of the lens 90.

[0038] The reflective member 80 is made of metal. That is, the material of the reflective member 80 is metal. The reflective member 80 has, for example, a first layer 82, a second layer 84, and a third layer 86. The first layer 82 is provided on the n-electrode 32. The first layer 82 is provided between the n-electrode 32 and the second layer 84. The first layer 82 is, for example, a TiN layer. The first layer 82 improves adhesion between the n-electrode 32 and the reflective member 80. The second layer 84 is provided on the first layer 82. The second layer 84 is provided between the first layer 82 and the third layer 86. The thickness of the second layer 84 is greater than the thicknesses of the first layer 82 and the third layer 86. The reflectivity of the second layer 84 for light generated in the light-emitting layer 24 is higher than the reflectivity of the first layer 82 and the reflectivity of the third layer 86. The second layer 84 is, for example, an Al layer. The third layer 86 is provided on the second layer 84. The third layer 86 is, for example, a TiN layer. The third layer 86 reduces reflection of light from an exposure tool by the reflective member 80 when the reflective member 80 is patterned using photolithography.

[0039] The reflective member 80 is electrically connected to the drive circuit 14. As shown in Fig. 5, the substrate 10 has, for example, a pad 16. The pad 16 is electrically connected to the drive circuit 14. The pad 16 is electrically connected to the reflective member 80, for example, via wire bonding (not shown).

[0040] As shown in FIG. 1, the lens 90 is provided on the transparent layer 70 on the side opposite to the n-electrode 32. The lens 90 is provided on the transparent layer 70. In a plan view, the lens 90 overlaps with the light-emitting layer 24. A plurality of lenses 90 are provided corresponding to the plurality of light-emitting elements 102. The plurality of lenses 90 form a microlens array. The material of the lens 90 is, for example, SiON.

[0041] The lens 90 has, for example, an emission surface 92 and a second tapered portion 94. The emission surface 92 emits light generated in the light-emitting layer 24. The emission surface 92 is a curved surface. In the illustrated example, the emission surface 92 is a convex surface. The second tapered portion 94 has a tapered shape whose width increases from the transparent layer 70 side toward the emission surface 92 side. The width of the second tapered portion 94 gradually increases from the transparent layer 70 side toward the emission surface 92 side. In the illustrated example, the shape of the second tapered portion 94 is trapezoidal. The reflective member 80 is in contact with a side surface 95 of the second tapered portion 94. The side surface 95 is inclined with respect to the stacking direction. Note that the side surface 21 of the first tapered portion 20a and the side surface 95 of the second tapered portion 94 may be on the same imaginary plane.

[0042] In the above, the semiconductor layer provided between substrate 10 and light-emitting layer 24 is a p-type semiconductor layer, and the semiconductor layer provided on the side of light-emitting layer 24 opposite substrate 10 is an n-type semiconductor layer, but the p-type and n-type may be reversed. That is, the semiconductor layer provided between substrate 10 and light-emitting layer 24 may be an n-type semiconductor layer, and the semiconductor layer provided on the side of light-emitting layer 24 opposite substrate 10 may be a p-type semiconductor layer. In this case, the electrode electrically connected to the semiconductor layer provided between substrate 10 and light-emitting layer 24 serves as an n-electrode, and the electrode electrically connected to the semiconductor layer provided on the side of light-emitting layer 24 opposite substrate 10 serves as a p-electrode.

[0043] Although the above description has been given of an InGaN-based light emitting layer 24, various material systems that can emit light when a current is injected depending on the wavelength of the emitted light can be used for the light emitting layer 24. For example, semiconductor materials such as AlGaN-based, AlGaAs-based, InGaAs-based, InGaAsP-based, InP-based, GaP-based, and AlGaP-based materials can be used.

[0044] 1.2. Light-emitting device manufacturing method Next, a method for manufacturing the light emitting device 100 according to the first embodiment will be described with reference to the drawings. Figures 6 to 14 are cross-sectional views that schematically show the manufacturing process for the light emitting device 100 according to the first embodiment.

[0045] As shown in Fig. 6, a buffer layer 28, an n-type semiconductor layer 26, a light-emitting layer 24, and a p-type semiconductor layer 22 are epitaxially grown in this order on a growth substrate 110. Examples of methods for epitaxial growth include MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy). The growth substrate 110 is a substrate for epitaxially growing the stacked body 20. The growth substrate 110 is, for example, a silicon substrate. The stacked body 20 is formed by this process.

[0046] Next, the p-electrode 30 is formed on the stack 20. The p-electrode 30 is formed by, for example, vacuum deposition, sputtering, or CVD (Chemical Vapor Deposition).

[0047] Next, the laminate 20 is patterned. The patterning is performed so that the side surface 21 of the first tapered portion 20a of the laminate 20 is inclined with respect to the stacking direction. The patterning is performed by, for example, photolithography and dry etching.

[0048] Next, the insulating layer 40 is formed on the stacked body 20. The insulating layer 40 is formed by, for example, a CVD method or an ALD (Atomic Layer Deposition) method.

[0049] Next, the insulating layer 40 is patterned to form a first contact hole 42. As a result, the p-electrode 30 is exposed.

[0050] 7, a metal layer 50 is formed on the p-electrode 30 and the insulating layer 40. The metal layer 50 is formed by, for example, vacuum deposition or sputtering.

[0051] Next, an interlayer insulating layer 60 is formed so as to cover the stacked body 20. The interlayer insulating layer 60 is formed by, for example, a CVD method or a spin coating method, and the interlayer insulating layer 60 is planarized using a CMP (Chemical Mechanical Polishing) device or the like.

[0052] 8, a first support substrate 112 is bonded to the interlayer insulating layer 60. The first support substrate 112 is bonded so that the stacked body 20 is located between the first support substrate 112 and the growth substrate 110.

[0053] As shown in Fig. 9, the growth substrate 110 and a portion of the buffer layer 28 are removed. The growth substrate 110 and the buffer layer 28 are removed by, for example, etching, CMP, etc. Fig. 9 shows a state in which the state in Fig. 8 is turned upside down.

[0054] Next, a plurality of protrusions 29 are formed on the buffer layer 28. The protrusions 29 are formed by, for example, photolithography and etching.

[0055] Next, the n-electrode 32 is formed on the buffer layer 28. The n-electrode 32 is formed by, for example, vacuum deposition or sputtering. By this process, a plurality of light-emitting elements 102 are formed.

[0056] 10, a transparent layer 70 is formed on the n-electrode 32. The transparent layer 70 is formed by, for example, a CVD method. Next, the transparent layer 70 is patterned to form a third contact hole 72. This exposes the n-electrode 32.

[0057] 11, a reflective member 80 is formed on the entire surface. The reflective member 80 is formed by, for example, sputtering or vacuum deposition.

[0058] As shown in FIG. 12, the reflective member 80 is patterned. The patterning is performed by, for example, photolithography and etching. This exposes the transparent layer 70. If the reflective member remains in a position that overlaps the light-emitting layer in a planar view, light generated in the light-emitting layer cannot be emitted upward. Therefore, taking into account manufacturing variations, etc., over-etching is performed on the reflective member 80. This removes a portion of the transparent layer 70. The transparent layer 70 functions as an etching stopper when etching the reflective member 80. The transparent layer 70 is a sacrificial layer. The n-electrode 32 is not exposed when etching the reflective member 80. The etching is performed so that the side surfaces of the reflective member 80 are inclined with respect to the stacking direction.

[0059] 13, a lens 90 that contacts the reflective member 80 is formed on the transparent layer 70. The lens 90 is formed, for example, by depositing SiON by a CVD method, followed by photolithography and dry etching. Next, a second support substrate 114 is formed on the lens 90.

[0060] The first support substrate 112 is removed as shown in Fig. 14. Fig. 14 shows a state in which the state in Fig. 13 is turned upside down.

[0061] Next, the interlayer insulating layer 60 is patterned to form a second contact hole 62. This exposes the metal layer 50.

[0062] Next, the first portion 64 a of the contact 64 is formed in the second contact hole 62 .

[0063] As shown in Fig. 1, a substrate 10 is prepared, and a first portion 64a of the contact 64 and a second portion 64b of the contact 64 are bonded to each other. This allows the light emitting element 102 to be junction-mounted on the substrate 10. The light emitting element 102 is bonded to the substrate 10 by, for example, hybrid bonding. Note that Fig. 1 shows a state in which the light emitting element 102 is turned upside down compared to the state in Fig. 14.

[0064] Next, the second support substrate 114 is removed.

[0065] Through the above steps, the light emitting device 100 can be manufactured.

[0066] 1.3. Effects In the light-emitting device 100, the first light-emitting element 102a includes a stack 20 as a first stack having a p-type semiconductor layer 22 as a first semiconductor layer, an n-type semiconductor layer 26 as a second semiconductor layer, and a light-emitting layer 24 as a first light-emitting layer, an insulating layer 40 as a first insulating layer provided on a side surface 21 of the stack 20, a metal layer 50 as a first metal layer provided on the insulating layer 40 and located to the side of the stack 20, a p-electrode 30 as a first electrode provided between the substrate 10 and the stack 20 and electrically connected to the p-type semiconductor layer 22, and an n-electrode 32 as a second electrode provided on the opposite side of the stack 20 from the p-electrode 30 and electrically connected to the n-type semiconductor layer 26. Furthermore, light emitting device 100 includes a transparent layer 70 as a first transparent layer provided on the side of n-electrode 32 of first light emitting element 102a opposite stacked body 20, a lens 90 as a first lens provided on the transparent layer 70 opposite n-electrode 32 and overlapping with light emitting layer 24 in plan view, and a metallic reflective member 80 provided on the side of lens 90 and transparent layer 70. Reflective member 80 is electrically connected to n-electrode 32.

[0067] Therefore, in the light-emitting device 100, when the reflective member 80 is patterned by etching, the transparent layer 70 reduces the possibility of etching the n-electrode 32, thereby reducing the possibility of disconnection and high resistance. Furthermore, in the light-emitting device 100, the reflective member 80 is electrically connected to the n-electrode 32, which increases the current injected into the light-emitting layer 24 and the amount of light generated in the light-emitting layer 24. This results in higher brightness and efficiency. If the n-electrode were thickened to prevent disconnection or the like, crosstalk between the first light-emitting element and the second light-emitting element would increase. However, in the light-emitting device 100, the transparent layer 70 is provided and the reflective member 80 is electrically connected to the n-electrode 32, which reduces disconnection or the like while reducing crosstalk between the first light-emitting element 102a and the second light-emitting element 102b.

[0068] In the light-emitting device 100, the second light-emitting element 102b includes a stack 20 as a second stack having a p-type semiconductor layer 22 as a third semiconductor layer, an n-type semiconductor layer 26 as a fourth semiconductor layer, and a light-emitting layer 24 as a second light-emitting layer, an insulating layer 40 as a second insulating layer provided on a side surface 21 of the stack 20, a metal layer 50 as a second metal layer provided on the insulating layer 40 and located to the side of the stack 20, a p-electrode 30 as a third electrode provided between the substrate 10 and the stack 20 and electrically connected to the p-type semiconductor layer 22, and an n-electrode 32 as a fourth electrode provided on the opposite side of the stack 20 from the p-electrode 30 and electrically connected to the n-type semiconductor layer 26. Furthermore, the light-emitting device 100 includes a transparent layer 70 as a second transparent layer provided on the side of the n-electrode 32 of the second light-emitting element 102b opposite the laminate 20, and a lens 90 as a second lens provided on the opposite side of the transparent layer 70 from the n-electrode 32 and overlapping with the light-emitting layer 24 in a planar view. The n-electrode 32 of the first light-emitting element 102a and the n-electrode 32 of the second light-emitting element 102b are continuous. Therefore, in the light-emitting device 100, the n-electrode 32 of the first light-emitting element 102a and the n-electrode 32 of the second light-emitting element 102b can be formed integrally, and the n-electrode 32 can be used as a common electrode in the first light-emitting element 102a and the second light-emitting element 102b.

[0069] In the light emitting device 100, the insulating layer 40 of the first light emitting element 102a and the insulating layer 40 of the second light emitting element 102b are continuous. Therefore, in the light emitting device 100, the insulating layer 40 of the first light emitting element 102a and the insulating layer 40 of the second light emitting element 102b can be formed integrally.

[0070] In the light-emitting device 100, the laminate 20 has a first tapered portion 20a whose width increases from the p-electrode 30 side toward the n-electrode 32 side, and the insulating layer 40 is provided on the side surface 21 of the first tapered portion 20a. Therefore, in the light-emitting device 100, the side surface 21 can reflect light generated in the light-emitting layer 24 toward the n-electrode 32 side.

[0071] In the light-emitting device 100, the lens 90 has an emission surface 92 that emits light generated in the light-emitting layer 24, and a second tapered portion 94 that increases in width from the transparent layer 70 side toward the emission surface 92 side, and the reflecting member 80 contacts a side surface 95 of the second tapered portion 94. Therefore, in the light-emitting device 100, the side surface 95 can reflect the light generated in the light-emitting layer 24 toward the emission surface 92 side.

[0072] In the light emitting device 100, the exit surface 92 is a curved surface. Therefore, in the light emitting device 100, for example, the light generated in the light emitting layer 24 can be condensed.

[0073] In the light emitting device 100, the transparent layer 70 may have insulating properties. If the transparent layer 70 has insulating properties, then when the reflective member 80 is patterned by etching, the transparent layer 70 can be formed using a material that has a lower etching rate than the n-electrode 32. That is, the etching selectivity between the reflective member 80 and the transparent layer 70 can be increased. This further reduces the possibility that the n-electrode 32 will be etched when the reflective member 80 is patterned.

[0074] In the light-emitting device 100, the transparent layer 70 may be conductive. If the transparent layer 70 is conductive, the resistance can be reduced, and the current injected into the light-emitting layer 24 can be further increased.

[0075] 2. Second embodiment 2.1. Light-emitting device Next, a light emitting device according to a second embodiment will be described with reference to the drawings. Fig. 15 is a cross-sectional view schematically showing a light emitting device 200 according to the second embodiment. Hereinafter, in the light emitting device 200 according to the second embodiment, components having the same functions as those of the light emitting device 100 according to the first embodiment described above will be denoted by the same reference numerals, and detailed description thereof will be omitted.

[0076] In the light emitting device 100 described above, the reflective member 80 is separated from the buffer layer 28 as shown in FIG.

[0077] 15, in the light emitting device 200, the reflective member 80 is in contact with the buffer layer 28. That is, the reflective member 80 is in contact with the stacked body 20. The third contact hole 72 penetrates the n-electrode 32 and exposes the buffer layer 28.

[0078] In the light emitting device 200, the reflective member 80 is in contact with the buffer layer 28, so the lower end of the reflective member 80 can be positioned further downward. That is, the distance between the reflective member 80 and the light emitting layer 24 can be reduced. This reduces crosstalk between the first light emitting element 102a and the second light emitting element 102b.

[0079] 2.2. Light-emitting device Next, a method for manufacturing the light emitting device 200 according to the second embodiment will be described. The method for manufacturing the light emitting device 200 according to the second embodiment is basically the same as the method for manufacturing the light emitting device 100 according to the first embodiment, except that the third contact hole 72 is formed so as to expose the buffer layer 28. Therefore, a detailed description thereof will be omitted.

[0080] 3. Third embodiment Next, a projector as an electronic device according to a third embodiment will be described with reference to the drawings. Fig. 16 is a diagram schematically showing a projector 700 according to the third embodiment.

[0081] The projector 700 includes, for example, a light source, a light emitting device 100. For convenience, the light emitting device 100 is illustrated in a simplified form in FIG.

[0082] Projector 700 includes a housing (not shown) and red light source 100R, green light source 100G, and blue light source 100B that are provided in the housing and emit red light, green light, and blue light, respectively. For convenience, red light source 100R, green light source 100G, and blue light source 100B are illustrated in a simplified form in FIG. 16.

[0083] The projector 700 further includes, for example, a first optical element 702R, a second optical element 702G, a third optical element 702B, a first light modulation device 704R, a second light modulation device 704G, a third light modulation device 704B, and a projection device 708, which are provided within the housing. The first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B are, for example, transmissive liquid crystal light valves. The projection device 708 is, for example, a projection lens.

[0084] Light emitted from red light source 100R is incident on first optical element 702R. The light emitted from red light source 100R is collected by first optical element 702R. Note that first optical element 702R may have a function other than collecting light. Second optical element 702G and third optical element 702B may also have a function other than collecting light.

[0085] The light collected by the first optical element 702R is incident on the first light modulation device 704R. The first light modulation device 704R modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the first light modulation device 704R and projects it onto the screen 710.

[0086] The light emitted from green light source 100G is incident on second optical element 702G, and is collected by second optical element 702G.

[0087] The light collected by the second optical element 702G is incident on the second light modulation device 704G. The second light modulation device 704G modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the second light modulation device 704G and projects it onto the screen 710.

[0088] The light emitted from blue light source 100B is incident on third optical element 702B. The light emitted from blue light source 100B is collected by third optical element 702B.

[0089] The light collected by the third optical element 702B enters the third light modulation device 704B. The third light modulation device 704B modulates the incident light in accordance with image information. The projection device 708 then enlarges the image formed by the third light modulation device 704B and projects it onto the screen 710.

[0090] The projector 700 further includes, for example, a cross dichroic prism 706 that combines the light emitted from the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B and guides the combined light to a projection device 708.

[0091] The three colored lights modulated by the first light modulation device 704R, the second light modulation device 704G, and the third light modulation device 704B enter the cross dichroic prism 706. The cross dichroic prism 706 is formed by bonding four right-angle prisms together, and a dielectric multilayer film that reflects red light and a dielectric multilayer film that reflects blue light are disposed on its inner surface. These dielectric multilayer films combine the three colored lights to form light that represents a color image. The combined light is then projected onto a screen 710 by a projection device 708, and an enlarged image is displayed.

[0092] Note that red light source 100R, green light source 100G, and blue light source 100B may directly form an image without using first light modulation device 704R, second light modulation device 704G, and third light modulation device 704B, by controlling light emitting device 100 as pixels of the image in accordance with image information. Then, projection device 708 may enlarge and project the image formed by red light source 100R, green light source 100G, and blue light source 100B onto screen 710.

[0093] In the above example, a transmissive liquid crystal light valve is used as the light modulation device, but a light valve other than a liquid crystal light valve may be used, or a reflective light valve may be used. Examples of such light valves include a reflective liquid crystal light valve and a digital micromirror device. The configuration of the projection device is determined by the type of light valve used. This is changed as appropriate depending on the type of light valve.

[0094] The light source can also be applied to a light source device of a scanning type image display device having a scanning means which is an image forming device that displays an image of a desired size on a display surface by scanning light from the light source on a screen.

[0095] 4. Fourth embodiment Next, a display as an electronic device according to a fourth embodiment will be described with reference to the drawings. Fig. 17 is a plan view schematically showing a display 800 according to the fourth embodiment. Fig. 18 is a cross-sectional view schematically showing the display 800 according to the fourth embodiment. Note that Fig. 17 illustrates an X-axis and a Y-axis as two axes that are orthogonal to each other. For convenience, Figs. 17 and 18 illustrate a simplified light-emitting device 100.

[0096] The display 800 includes, for example, a light source, a light emitting device 100. For convenience, the light emitting device 100 is illustrated in a simplified form in FIGS.

[0097] The display 800 is a display device that displays an image. The image may include an image that displays only text information. The display 800 is a self-luminous display. As shown in FIGS. 17 and 18 , the display 800 includes, for example, a lens array 820 and a heat sink 830.

[0098] The drive circuit 14 drives the light emitting elements 102 based on, for example, input image information. The substrate 10 has, for example, a display area 18. The drive circuit 14 has, for example, a data line drive circuit 14a, a scanning line drive circuit 14b, and a control circuit 14c.

[0099] The display area 18 is made up of a plurality of pixels P. In the illustrated example, the pixels P are arranged along the X-axis and the Y-axis.

[0100] Although not shown, a plurality of scanning lines and a plurality of data lines are provided on the substrate 10. For example, the scanning lines extend along the X axis, and the data lines extend along the Y axis. The scanning lines are connected to a scanning line driving circuit 14b. The data lines are connected to a data line driving circuit 14a. Pixels P are provided at intersections of the scanning lines and the data lines.

[0101] One pixel P has, for example, one light-emitting element 102, one lens 90, and a pixel circuit (not shown). The pixel circuit has a switching transistor that functions as a switch for the pixel P. The gate of the switching transistor is connected to a scan line, and either the source or the drain is connected to a data line.

[0102] The data line driving circuit 14a and the scanning line driving circuit 14b are circuits that control the driving of the light emitting elements 102 that constitute the pixels P. The control circuit 14c controls the display of images.

[0103] Image data is supplied from a higher-level circuit to the control circuit 14c, which supplies various signals based on the image data to the data line drive circuit 14a and the scanning line drive circuit 14b.

[0104] When the scanning line driving circuit 14b activates a scanning signal to select a scanning line, it turns on the switching transistor of the selected pixel P. At this time, the data line driving circuit 14a supplies a data signal from the data line to the selected pixel P, causing the light emitting element 102 of the selected pixel P to emit light in response to the data signal.

[0105] The lens array 820 is configured to include a plurality of lenses 90. The heat sink 830 is in contact with the substrate 10. The material of the heat sink 830 is, for example, a metal such as copper or aluminum. The heat sink 830 dissipates heat generated by the light emitting elements 102.

[0106] 5. Fifth embodiment 5.1. Overall structure Next, a head mounted display as an electronic device according to a fifth embodiment will be described with reference to the drawings. Fig. 19 is a perspective view schematically showing a head mounted display 900 according to the fifth embodiment.

[0107] As shown in Fig. 19, the head mounted display 900 is a head-mounted display that has an appearance similar to glasses. The head mounted display 900 is worn on the head of an observer. The observer is a user who uses the head mounted display 900. The head mounted display 900 allows the observer to view image light formed by a virtual image, and also allows the observer to view an external world image in a see-through manner.

[0108] The head mounted display 900 includes, for example, a first display unit 910a, a second display unit 910b, a frame 920, a first temple 930a, and a second temple 930b.

[0109] The first display unit 910a and the second display unit 910b display images. Specifically, the first display unit 910a displays a virtual image for the observer's right eye. The second display unit 910b displays a virtual image for the observer's left eye. The display units 910a and 910b each include, for example, an image forming device 911 and a light guide device 915.

[0110] The image forming device 911 forms image light. The image forming device 911 has an optical system, such as a light source and a projection device, and an external member 912. The external member 912 houses the light source and the projection device.

[0111] The light guiding device 915 covers the viewer's eyes. The light guiding device 915 guides the image light formed by the image forming device 911 and allows the viewer to visually recognize the image light overlapping with external light. Details of the image forming device 911 and the light guiding device 915 will be described later.

[0112] The frame 920 supports the first display unit 910a and the second display unit 910b. The frame 920 surrounds, for example, the display units 910a and 910b. In the illustrated example, the image forming device 911 of the first display unit 910a is attached to one end of the frame 920. The image forming device 911 of the second display unit 910b is attached to the other end of the frame 920.

[0113] A first temple 930a and a second temple 930b extend from the frame 920. In the illustrated example, the first temple 930a extends from one end of the frame 920. The second temple 930b extends from the other end of the frame 920.

[0114] The first temple 930a and the second temple 930b are suspended over the ears of the viewer when the viewer wears the head mounted display 900. The viewer's head is positioned between the temples 930a and 930b.

[0115] 5.2. Image Forming Device and Light Guide Device 20 is a diagram schematically illustrating an image forming device 911 and a light guide device 915 of a first display unit 910a of a head-mounted display 900. The first display unit 910a and the second display unit 910b basically have the same configuration. Therefore, the following description of the first display unit 910a can also be applied to the second display unit 910b.

[0116] As shown in Fig. 20, the image forming device 911 includes, for example, a light emitting device 100 as a light source, a light modulation device 913, and a projection device 914 for forming an image. For convenience, Fig. 20 shows the light emitting device 100 in a simplified form.

[0117] The light modulation device 913 modulates the light incident from the light emitting device 100 in accordance with image information and emits image light. The light modulation device 913 is a transmissive liquid crystal light valve. The light emitting device 100 may be a self-luminous light emitting device that emits light in accordance with input image information. In this case, the light modulation device 913 is not provided.

[0118] The projection device 914 projects the image light emitted from the light modulation device 913 toward the light guide device 915. The projection device 914 is, for example, a projection lens. The lens constituting the projection device 914 may have an axially symmetrical surface as its lens surface.

[0119] The light guiding device 915 is accurately positioned relative to the projection device 914, for example, by being screwed to the lens barrel of the projection device 914. The light guiding device 915 has, for example, an image light guiding member 916 that guides the image light, and a see-through member 918 for see-through.

[0120] The image light emitted from the projection device 914 is incident on the image light guide member 916. The image light guide member 916 is a prism that guides the image light toward the viewer's eyes. The image light that has entered the image light guide member 916 is repeatedly reflected on the inner surface of the image light guide member 916, and is then reflected by the reflective layer 917 and emitted from the image light guide member 916. The image light that has emitted from the image light guide member 916 reaches the viewer's eyes. The reflective layer 917 is made of, for example, a metal or a dielectric multilayer film. The reflective layer 917 may be a half mirror.

[0121] The transparent member 918 is adjacent to the image light guiding member 916. The transparent member 918 is fixed to the image light guiding member 916. For example, the outer surface of the transparent member 918 is continuous with the outer surface of the image light guiding member 916. The transparent member 918 allows the viewer to see outside light through it. The image light guiding member 916 also has a function of allowing the viewer to see outside light through it, in addition to the function of guiding image light. Note that the head mounted display 900 may be configured not to allow the viewer to see outside light through it.

[0122] The light emitting devices according to the above-described embodiments can be used in applications other than projectors, displays, and head-mounted displays. The light emitting devices according to the above-described embodiments can be used, for example, in indoor and outdoor lighting, laser printers, scanners, sensing devices that use light, EVFs (Electronic View Finders), wearable displays such as smart watches, in-vehicle lights, and in-vehicle head-up displays.

[0123] The above-described embodiment and modifications are merely examples, and the present invention is not limited to these. For example, the embodiments and modifications can be combined as appropriate.

[0124] The present invention includes configurations that are substantially the same as the configurations described in the embodiments, for example, configurations with the same functions, methods, and results, or configurations with the same purpose and effects. The present invention also includes configurations that replace non-essential parts of the configurations described in the embodiments. The present invention also includes configurations that achieve the same effects or purposes as the configurations described in the embodiments. The present invention also includes configurations that add publicly known technology to the configurations described in the embodiments.

[0125] The following can be derived from the above-described embodiment and modifications.

[0126] One aspect of the light emitting device is A substrate; a first stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first insulating layer provided on a side surface of the first laminate; a first metal layer provided on the first insulating layer and positioned on a side of the first laminate; a first electrode provided between the substrate and the first stacked body and electrically connected to the first semiconductor layer; a second electrode provided on the opposite side of the first stack to the first electrode and electrically connected to the second semiconductor layer; a first transparent layer provided on the second electrode opposite to the first stacked body; a first lens provided on the opposite side of the first transparent layer from the second electrode and overlapping the first light-emitting layer in a plan view; a metallic reflecting member provided on each side of the first lens and the first transparent layer; Including, The reflecting member is electrically connected to the second electrode.

[0127] This light emitting device can reduce the possibility of electrical wiring breaking and increasing resistance.

[0128] In one embodiment of the light emitting device, a second stacked body including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer; a second insulating layer provided on a side surface of the second laminate; a second metal layer provided on the second insulating layer and positioned on a side of the second stacked body; a third electrode provided between the substrate and the second stacked body and electrically connected to the third semiconductor layer; a fourth electrode provided on the opposite side of the second stack to the third electrode and electrically connected to the fourth semiconductor layer; a second transparent layer provided on the side of the fourth electrode opposite to the second stacked body; a second lens provided on the second transparent layer opposite to the fourth electrode and overlapping with the second light-emitting layer in the plan view; Including, The second electrode and the fourth electrode may be continuous.

[0129] According to this light emitting device, the second electrode and the fourth electrode can be formed integrally.

[0130] In one embodiment of the light emitting device, The first insulating layer and the second insulating layer may be continuous.

[0131] According to this light emitting device, the first insulating layer and the second insulating layer can be formed integrally.

[0132] In one embodiment of the light emitting device, the first laminate has a first tapered portion whose width increases from the first electrode side toward the second electrode side, The first insulating layer may be provided on a side surface of the first tapered portion.

[0133] According to this light emitting device, the side surface of the first tapered portion can reflect the light generated in the first light emitting layer toward the second electrode side.

[0134] In one embodiment of the light emitting device, The first lens is an emission surface for emitting light generated in the first light-emitting layer; a second tapered portion whose width increases from the first transparent layer side toward the light-emitting surface side; and The reflecting member may be in contact with a side surface of the second tapered portion.

[0135] According to this light emitting device, the side surface of the second tapered section can reflect the light generated in the first light emitting layer toward the light exit surface.

[0136] In one embodiment of the light emitting device, The exit surface may be a curved surface.

[0137] According to this light emitting device, for example, the light generated in the first light emitting layer can be collected.

[0138] In one embodiment of the light emitting device, The first transparent layer may have insulating properties.

[0139] According to this light emitting device, the possibility that the second electrode is etched can be further reduced.

[0140] In one embodiment of the light emitting device, The first transparent layer may be electrically conductive.

[0141] According to this light emitting device, the current injected into the first light emitting layer can be further increased.

[0142] One aspect of the electronic device is This includes one aspect of the light emitting device. [Explanation of symbols]

[0143] 10...substrate, 12...base, 14...drive circuit, 14a...data line drive circuit, 14b...scanning line drive circuit, 14c...control circuit, 16...pad, 18...display area, 20...laminated body, 20a...first tapered portion, 21...side surface, 22...p-type semiconductor layer, 24...light-emitting layer, 26...n-type semiconductor layer, 28...buffer layer, 29...protrusion, 30...p electrode, 32...n electrode, 40...insulating layer, 42...first contact hole, 50...metal layer, 60...interlayer insulating layer, 6 2...second contact hole, 64...contact, 64a...first portion, 64b...second portion, 70...transparent layer, 72...third contact hole, 72a...first extension portion, 72b...second extension portion, 72c...intersection portion, 80...reflective member, 82...first layer, 84...second layer, 86...third layer, 90...lens, 92...emission surface, 94...second tapered portion, 95...side surface, 100...light-emitting device, 100R...red light source, 100G...green light source, 100B...blue light source, 1 02...light-emitting element, 102a...first light-emitting element, 102b...second light-emitting element, 110...growth substrate, 112...first support substrate, 114...second support substrate, 200...light-emitting device, 700...projector, 702R...first optical element, 702G...second optical element, 702B...third optical element, 704R...first light modulation device, 704G...second light modulation device, 704B...third light modulation device, 706...cross dichroic prism, 708...projection device, 71 0...screen, 800...display, 820...lens array, 830...heat sink, 900...head mounted display, 910a...first display unit, 910b...second display unit, 911...image forming device, 912...external member, 913...light modulation device, 914...projection device, 915...light guide device, 916...image light guide member, 917...reflective layer, 918...transparent member, 920...frame, 930a...first temple, 930b...second temple

Claims

1. A substrate; a first stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a first light emitting layer provided between the first semiconductor layer and the second semiconductor layer; a first insulating layer provided on a side surface of the first laminate; a first metal layer provided on the first insulating layer and positioned on a side of the first stacked body; a first electrode provided between the substrate and the first stacked body and electrically connected to the first semiconductor layer; a second electrode provided on the opposite side of the first stack to the first electrode and electrically connected to the second semiconductor layer; a first transparent layer provided on the second electrode opposite to the first stacked body; a first lens provided on the first transparent layer opposite to the second electrode and overlapping with the first light-emitting layer in a plan view; a metallic reflecting member provided on each side of the first lens and the first transparent layer; Including, The light emitting device, wherein the reflective member is electrically connected to the second electrode.

2. In claim 1, a second stacked body including a third semiconductor layer of the first conductivity type, a fourth semiconductor layer of the second conductivity type, and a second light emitting layer provided between the third semiconductor layer and the fourth semiconductor layer; a second insulating layer provided on a side surface of the second laminate; a second metal layer provided on the second insulating layer and positioned on a side of the second stacked body; a third electrode provided between the substrate and the second stacked body and electrically connected to the third semiconductor layer; a fourth electrode provided on the second stacked body on the opposite side to the third electrode and electrically connected to the fourth semiconductor layer; a second transparent layer provided on the side of the fourth electrode opposite to the second stacked body; a second lens provided on the second transparent layer opposite to the fourth electrode and overlapping with the second light-emitting layer in the plan view; Including, The second electrode and the fourth electrode are continuous.

3. In claim 2, The light emitting device, wherein the first insulating layer and the second insulating layer are continuous.

4. In claim 1, the first laminate has a first tapered portion whose width increases from the first electrode side toward the second electrode side, The light emitting device, wherein the first insulating layer is provided on a side surface of the first tapered portion.

5. In claim 1, The first lens is an emission surface for emitting light generated in the first light-emitting layer; a second tapered portion whose width increases from the first transparent layer side toward the light-emitting surface side; and The light emitting device, wherein the reflective member is in contact with a side surface of the second tapered portion.

6. In claim 5, The light emitting device, wherein the exit surface is a curved surface.

7. In claim 1, The light-emitting device, wherein the first transparent layer has insulating properties.

8. In claim 1, The light-emitting device, wherein the first transparent layer is electrically conductive.

9. An electronic device comprising the light emitting device according to any one of claims 1 to 8.

Images