Substrate Processing System

Abstract

The power required to heat the treatment liquid flowing through the circulation path is reduced. [Solution] A substrate processing system (10) includes a substrate processing apparatus (1) that supplies a processing liquid to a substrate, a supply unit (200) that introduces the processing liquid to the substrate processing apparatus (1), and a heat recovery unit (40) that recovers heat from waste liquid discharged from the substrate processing apparatus (1). The supply unit (200) includes a temperature adjustment unit (20) that adjusts the temperature of the processing liquid while circulating the processing liquid in a circulation path (201), a supply path (21) that introduces the processing liquid from the temperature adjustment unit (20) to the substrate processing apparatus (1), and a replenishment path (22) that replenishes the processing liquid to the temperature adjustment unit (20). The heat recovery unit (40) includes a heat pump (41) that recovers heat from the waste liquid and provides heat to the processing liquid flowing through the replenishment path (22).

Description

[Technical Field]

[0001] The present invention relates to a substrate processing system that supplies a processing liquid to a substrate to process the substrate. [Background technology]

[0002] Conventionally, in substrate processing apparatuses for processing semiconductor substrates and other types of substrates (hereinafter simply referred to as "substrates"), various processing liquids (including pure water) are supplied to the substrates to process the substrates. Depending on the type of processing, the processing liquid is heated to a desired temperature before being supplied to the substrates. Heating and maintaining the temperature of the processing liquid is performed by, for example, a halogen lamp heater or an electric heater, and a large amount of power is consumed by the heater.

[0003] Patent Document 1 discloses a technology for using a heat pump to heat a processing liquid supplied to a plurality of substrate processing apparatuses and to cool a cooling liquid. Also, in Figures 11 and 12 of Patent Document 1, high-temperature waste liquid from the substrate processing apparatuses is supplied to a waste liquid cooling unit, and the waste liquid is cooled in a cooling circulation path. The cooling circulation path is connected to a heat pump device, and heat is transferred from the cooling circulation path to a heating circulation path, thereby heating the processing liquid. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Publication No. 2022-178121 Summary of the Invention [Problem to be solved by the invention]

[0005] Conventionally, a processing liquid is circulated to maintain a constant temperature, and the processing liquid is supplied to a substrate processing apparatus when needed. In this case, installing a heat pump directly in the circulation path as in Patent Document 1 increases the influence of heat fluctuations from the heat pump, and is not preferable for processing liquids with a small tolerance for temperature change.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a new method for effectively utilizing heat by using a heat pump in a substrate processing apparatus. [Means for solving the problem]

[0007] A first aspect of the present invention is a substrate processing system comprising: a substrate processing apparatus that supplies a processing liquid to a substrate; a supply unit that introduces the processing liquid to the substrate processing apparatus; and a heat recovery unit that recovers heat from waste liquid discharged from the substrate processing apparatus; the supply unit comprises a temperature control unit that adjusts the temperature of the processing liquid while circulating the processing liquid in a circulation path; a supply path that introduces the processing liquid from the temperature control unit to the substrate processing apparatus; and a replenishment path that replenishes the processing liquid to the temperature control unit; and the heat recovery unit comprises a heat pump that recovers heat from the waste liquid and provides heat to the processing liquid flowing through the replenishment path.

[0008] A second aspect of the present invention is the substrate processing system of the first aspect, wherein the heat recovery unit further includes a heat exchanger, and the heat pump indirectly recovers heat from the waste liquid via the heat exchanger.

[0009] A third aspect of the present invention is the substrate processing system of the second aspect, wherein the heat recovery unit further comprises a medium tank between the heat pump and the heat exchanger for temporarily storing the heat medium from the heat exchanger.

[0010] A fourth aspect of the present invention is the substrate processing system of the first aspect (which may be any one of the first to third aspects), further comprising a waste liquid tank on a discharge path through which the waste liquid flows, for temporarily storing the waste liquid.

[0011] A fifth aspect of the present invention is a substrate processing system according to the first aspect (which may be any one of the first to fourth aspects), wherein the heat recovery section further comprises a heat exchanger, and the heat pump indirectly provides heat to the processing liquid flowing through the replenishment path via the heat exchanger.

[0012] A sixth aspect of the present invention is a substrate processing system according to the fifth aspect, wherein the temperature control unit includes a circulation tank on the circulation path, the processing liquid that has passed through the heat exchanger via the replenishment path is guided to the circulation tank, and the supply unit further includes an auxiliary path that guides the processing liquid in the circulation tank to the replenishment path at a position just before the heat exchanger.

[0013] A seventh aspect of the present invention is the substrate processing system according to any one of the first to sixth aspects, wherein the processing liquid is pure water. [Effects of the Invention]

[0014] According to the present invention, it is possible to reduce the power required to heat the treatment liquid. [Brief explanation of the drawings]

[0015] [Figure 1] FIG. 2 is a plan view showing the layout of the substrate processing system. [Figure 2] FIG. 1 shows a processing unit and a supply section. [Figure 3] FIG. 1 is a diagram showing a configuration of a substrate processing apparatus. [Figure 4] FIG. 2 shows a supply section and a heat recovery section. [Figure 5] FIG. 1 is a diagram showing a simplified structure of a heat pump. [Figure 6] FIG. 10 is a diagram showing another example of the heat recovery unit. DETAILED DESCRIPTION OF THE INVENTION

[0016] 1 is a plan view showing the layout of a substrate processing system 10. The substrate processing system 10 is a system that processes semiconductor substrates 9 (hereinafter simply referred to as "substrates 9"). The substrate processing system 10 includes an indexer block 101 and a processing block 102 coupled to the indexer block 101.

[0017] The indexer block 101 includes a carrier holding unit 104, an indexer robot 105, and an IR movement mechanism 106. The carrier holding unit 104 holds a plurality of carriers 107, each capable of accommodating a plurality of substrates 9. The plurality of carriers 107 (e.g., FOUPs) are held by the carrier holding unit 104 while being arranged in a predetermined carrier arrangement direction. The IR movement mechanism 106 moves the indexer robot 105 in the carrier arrangement direction. The indexer robot 105 performs an unloading operation to unload the substrates 9 from the carriers 107, and a loading operation to load the substrates 9 into the carriers 107 held by the carrier holding unit 104. The substrates 9 are transported by the indexer robot 105 in a horizontal position.

[0018] The processing block 102 includes a plurality of (for example, four or more) processing units 108 that process substrates 9, and a center robot 109. The processing units 108 are arranged to surround the center robot 109 in a plan view. The processing units 108 perform various processes on the substrates 9. In this embodiment, one processing unit 108 has a tower structure in which three single-wafer processing apparatuses are stacked vertically.

[0019] The center robot 109 performs a loading operation to load the substrate 9 into the substrate processing apparatus of the processing unit 108, and an unloading operation to unload the substrate 9 from the substrate processing apparatus. Furthermore, the center robot 109 transports the substrate 9 between the multiple processing units 108. The substrate 9 is transported by the center robot 109 in a horizontal position. The center robot 109 receives the substrate 9 from the indexer robot 105 and hands the substrate 9 to the indexer robot 105.

[0020] FIG. 2 shows one processing unit 108 and a supply section 200, which is a peripheral configuration for supplying deionized water to the processing unit 108. The supply section 200 includes a temperature control section 20, a supply path 21, and a replenishment path 22. The processing unit 108 has a structure in which three substrate processing apparatuses 1 are stacked vertically. Each substrate processing apparatus 1 is connected to a supply path 21 for supplying deionized water (deionized water, hereinafter referred to as "DIW"), which is a heated processing liquid. Note that other supply paths for supplying other processing liquids such as chemical solutions are also connected to the substrate processing apparatus 1, but are not shown in FIG. 2. Valves 211 are provided on the six supply paths 21, and DIW is supplied to the substrate processing apparatus 1 when the valves 211 are opened.

[0021] The six supply paths 21 are connected to one circulation path 201. A circulation tank 202, a pump 203, a heater 204, and a filter 205 are provided on the circulation path 201. The above configuration constitutes a temperature adjustment unit 20 that adjusts the temperature of the DIW while circulating the DIW in the circulation path 201. A portion of the temperature adjustment unit 20 is shared with a configuration that supplies heated DIW to other processing units 108. That is, the circulation path 201 branches into four paths downstream of the heater 204, and each branch path is a part of the circulation path 201 for supplying DIW to other processing units 108. The branched circulation paths 201 are then led to the circulation tank 202. The circulation tank 202, the pump 203, and the heater 204 are common parts of the four temperature adjustment units 20 and are provided in a common part of the four circulation paths 201.

[0022] The pump 203 drives the DIW from the circulation tank 202 to the heater 204, where it is heated to a desired temperature as needed. Various heaters, such as a halogen lamp heater or an electric heating wire, can be used as the heater 204. The DIW passes through a filter 205 for removing foreign matter and further flows through the circulation path 201. As needed, the DIW is supplied to the substrate processing apparatus 1 via the supply path 21. The DIW not directed to the supply path 21 continues flowing through the circulation path 201 and returns to the circulation tank 202. The temperature of the DIW stored in the circulation tank 202 is constantly measured, and the heater 204 is controlled based on the measurement results. The heater 204 may be controlled based on the temperature of the DIW at the outlet and inlet sides of the heater 204. This allows DIW at a constant temperature to be supplied to the substrate processing apparatus 1. Furthermore, in the substrate processing system 10, a single heater 204 controls the temperature of the DIW for multiple substrate processing apparatuses 1 in the processing unit 108, thereby achieving a simple supply of heated DIW. The heater 204 may have a structure in which a plurality of heater elements are connected in series or in parallel. DIW is used as a rinse liquid in the substrate processing apparatus 1. DIW may also be used to dilute other processing liquids. DIW is replenished to the circulation tank 202 of the temperature adjustment unit 20 from a replenishment path 22.

[0023] The number of substrate processing apparatuses 1 in the processing unit 108 is not limited to three and may be, for example, four. Preferably, the number of substrate processing apparatuses 1 in the processing unit 108 is two or more. The number of substrate processing apparatuses 1 in the processing unit 108 may be one. Since one heater 204 is provided corresponding to four processing units 108, the manufacturing cost of the substrate processing system 10 can be reduced compared to when a heater is provided in each processing unit 108 or each substrate processing apparatus 1.

[0024] FIG. 3 is a diagram showing the configuration of one substrate processing apparatus 1. The substrate processing apparatus 1 includes a substrate holding unit 31, a substrate rotation mechanism 32, a cup unit 33, multiple supply nozzles 34, and a housing 35. The substrate holding unit 31, the substrate rotation mechanism 32, the cup unit 33, and the supply nozzles 34 are housed in the internal space of the housing 35. An airflow forming unit 351 is provided in the canopy of the housing 35, and supplies gas to the internal space to form a downward airflow (so-called downflow). For example, an FFU (fan filter unit) is used as the airflow forming unit 351. The substrate processing apparatus 1 further includes a control unit (not shown), which controls the substrate holding unit 31, the substrate rotation mechanism 32, the cup unit 33, the supply nozzles 34, etc.

[0025] The substrate holding unit 31 holds the substrate 9 in a horizontal position. The substrate holding unit 31 has, for example, a chuck that clamps the outer edge of the substantially disk-shaped substrate 9 with a plurality of holding pins. The substrate holding unit 31 may be a chuck that comes into contact with the center of the underside of the substrate 9 and adsorbs it.

[0026] The substrate rotation mechanism 32 is disposed below the substrate holding part 31. The substrate rotation mechanism 32 rotates the substrate 9 together with the substrate holding part 31 around a rotation axis J1 that extends substantially parallel to the vertical direction. The substrate rotation mechanism 32 includes a shaft 321 and a motor 322. The shaft 321 is a substantially columnar or cylindrical member that is centered on the rotation axis J1. The shaft 321 extends in the vertical direction and is connected to the center of the underside of the substrate holding part 31. The motor 322 is an electric rotary motor that rotates the shaft 321. Note that the substrate rotation mechanism 32 may be a motor having another structure (for example, a hollow motor, etc.).

[0027] The supply nozzles 34 supply a processing liquid to the substrate 9 to perform liquid processing on the substrate 9. The processing liquid includes chemical liquids such as SPM (Sulfuric acid hydrogen peroxide mixture (aqueous mixture of sulfuric acid and hydrogen peroxide)), SC1 (aqueous mixture of ammonia and hydrogen peroxide), and SC2 (aqueous mixture of hydrochloric acid and hydrogen peroxide), as well as DIW, which is a rinse liquid. Although FIG. 3 shows two supply nozzles 34 that eject processing liquid from above the substrate 9 toward the upper surface of the substrate 9, other nozzles may also be provided. The ejection opening of each supply nozzle 34 can be moved between a position above the substrate 9 and a position away from above the substrate 9 by a nozzle movement mechanism (not shown).

[0028] The cup portion 33 has an annular cup centered on the rotation axis J1, and the cup receives liquid such as the processing liquid that splashes toward the periphery from the rotating substrate 9. A drain port (not shown) is provided at the bottom of the cup portion 33 to discharge the processing liquid received in the cup to the outside of the housing 35.

[0029] As an example of processing of the substrate 9 in the substrate processing apparatus 1, first, high-temperature SPM is supplied onto the substrate 9 that is held and rotated by the substrate holder 31, and then heated DIW is supplied onto the substrate 9 as a rinse liquid. Next, high-temperature SC1 is supplied onto the rotating substrate 9, and then heated DIW is supplied onto the substrate 9 as a rinse liquid. After the supply of the rinse liquid is completed, the substrate 9 is rotated at high speed and dried.

[0030] 4 is a diagram showing a configuration in the substrate processing system 10 in which heat from wastewater discharged from the substrate processing apparatus 1 is used to heat the DIW supplied to the substrate processing apparatus 1. In FIG. 4, only one processing unit 108 is shown, and components such as pumps and valves are not shown. A control unit that controls the operation of each component is also not shown. As components corresponding to the supply unit 200 in FIG. 2, only the processing unit 108, supply path 21, circulation path 201, circulation tank 202, heater 204, and replenishment path 22 are shown.

[0031] Wastewater, which is a high-temperature processing liquid discharged from each substrate processing apparatus 1, is discharged to the outside of the substrate processing system 10 via a discharge path 11. The substrate processing system 10 has a heat recovery unit 40, which recovers heat from the wastewater flowing through the discharge path 11 and provides the heat to the DIW flowing through the replenishment path 22. The heat recovery unit 40 is provided as a common component for the four processing units 108. That is, in the substrate processing system 10, the circulation tank 202, the pump 203 (see FIG. 2), the heater 204, and the heat recovery unit 40 are provided as a common component for the four processing units 108.

[0032] The heat recovery unit 40 includes a heat pump 41, a first heat exchanger 42 disposed on the exhaust path 11 side of the heat pump 41, a second heat exchanger 43 disposed on the temperature adjustment unit 20 side of the heat pump 41, and a medium tank 44 disposed between the first heat exchanger 42 and the heat pump 41. Fresh water, which is a heat medium, is stored in the medium tank 44. The number of heat pumps 41 in the substrate processing system 10 is one.

[0033] A circulation path 421 is provided between the first heat exchanger 42 and the medium tank 44. The circulation path 421 allows fresh water to flow from the first heat exchanger 42 to the medium tank 44 and back from the medium tank 44 to the first heat exchanger 42. The medium tank 44 functions as a buffer tank that temporarily stores the heat medium from the first heat exchanger 42 in the circulation path 421. "Temporarily storing" means that the inflowing fluid is stored in the tank and the fluid is discharged from the tank when necessary (the same applies hereinafter).

[0034] A circulation path 422 is provided between the medium tank 44 and the heat pump 41. The circulation path 422 allows fresh water to flow from the heat pump 41 to the medium tank 44 and return from the medium tank 44 to the heat pump 41. The medium tank 44 also functions as a buffer tank in the circulation path 422. The circulation paths 421 and 422 share a flow path 423 that introduces fresh water into the medium tank 44 and a flow path 424 that discharges fresh water from the medium tank 44, and a pump (not shown) is provided on the flow path 424.

[0035] A circulation path 431 is provided between the second heat exchanger 43 and the heat pump 41. The circulation path 431 allows the fresh water, which is a heat medium, to flow from the second heat exchanger 43 to the heat pump 41 and return from the heat pump 41 to the second heat exchanger 43.

[0036] The substrate processing system 10 is connected to a DIW supply source 5. A replenishment path 22 is connected to the DIW supply source 5, and DIW from the DIW supply source 5 is guided through the replenishment path 22 and the second heat exchanger 43 to the circulation tank 202. The supply unit 200 also has an auxiliary path 221 that connects a portion 222 of the replenishment path 22 between the DIW supply source 5 and the second heat exchanger 43 to the circulation tank 202. The auxiliary path 221 guides the DIW in the circulation tank 202 to the replenishment path 22 at a position before the second heat exchanger 43 (i.e., an upstream position). The supply unit 200 also has a bypass path 223 that connects a portion 224 of the replenishment path 22 between the second heat exchanger 43 and the circulation tank 202 to the DIW supply source 5. The bypass path 223 guides the DIW to the replenishment path 22 at a position before the circulation tank 202.

[0037] FIG. 5 is a simplified diagram showing the structure of heat pump 41. Heat pump 41 includes compressor 411, expansion valve 412, condenser 413, evaporator 414, and circulation path 415. Compressor 411, condenser 413, expansion valve 412, and evaporator 414 are provided on circulation path 415 in this order. Carbon dioxide (CO2) is used as the heat medium flowing through circulation path 415. Note that the heat medium of heat pump 41 is not limited to carbon dioxide. A circulation path 431 (see FIG. 4) is connected to condenser 413. A circulation path 422 is connected to evaporator 414.

[0038] Compressor 411 is a compression pump. The gaseous heat medium, compressed and heated by compressor 411, transfers heat to fresh water flowing through circulation path 431 in condenser 413, a heat exchanger, and becomes liquid. The heat medium is guided from condenser 413 to expansion valve 412, where the pressure is reduced and the temperature drops. Then, in evaporator 414, a heat exchanger, it receives heat from the fresh water flowing through circulation path 422 and evaporates, becoming gaseous. The heat medium then returns to compressor 411. Through the above operation, heat pump 41 uses the heat of the fresh water flowing through circulation path 422 to heat the fresh water flowing through circulation path 431. Because heat pump 41 consumes electricity mainly to compress the heat medium, it can, in principle, demonstrate a heating capacity that exceeds its power consumption.

[0039] Next, the operation of the heat recovery unit 40 in Fig. 4 will be described. Wastewater discharged from the substrate processing apparatus 1 is guided to the first heat exchanger 42 by the discharge path 11. A discharge path 11 is provided for each type of wastewater, but Fig. 4 shows only one discharge path 11. It is not necessary for all discharge paths 11 to be connected to the heat recovery unit 40 in Fig. 4. The temperature of the wastewater is preferably 20°C or higher and 65°C or lower. Examples of wastewater include used SPM, SC1, SC2, and heated DIW (Hot-DIW).

[0040] The first heat exchanger 42 transfers heat from the waste liquid to the fresh water flowing in the circulation path 421. The waste liquid flows intermittently in the discharge path 11, but because the medium tank 44 is provided in the circulation path 421, the medium tank 44 alleviates temperature changes in the fresh water. The fresh water is led to the evaporator 414 of the heat pump 41 by the circulation path 422. As a result, the heat of the fresh water on the evaporator 414 side is used to heat the fresh water on the condenser 413 side. In other words, the heat of the fresh water on the first heat exchanger 42 side is used to heat the fresh water flowing in the circulation path 431 on the second heat exchanger 43 side.

[0041] The heated fresh water is guided to the second heat exchanger 43 through the circulation path 431, and the second heat exchanger 43 imparts heat to the DIW flowing through the replenishment path 22. That is, the heat pump 41 indirectly imparts heat to the DIW, which is the treatment liquid, flowing through the replenishment path 22, via the second heat exchanger 43. The heated DIW is guided to the circulation tank 202.

[0042] By using the heat pump 41 to heat the DIW flowing through the replenishment path 22, it is possible to reduce the power required to heat the DIW flowing through the circulation path 201, i.e., the power consumed by the heater 204. As a result, an inexpensive heater can be used as the heater 204, and the load of separately cooling the wastewater is also reduced. Furthermore, by using the heat pump 41 to heat the DIW flowing through the replenishment path 22, it is possible to suppress temperature changes in the DIW in the circulation path 201 compared to when the DIW in the circulation path 201 is heated using a heat pump.

[0043] In the heat recovery unit 40, the heat pump 41 indirectly recovers heat from the wastewater via the first heat exchanger 42. This prevents the wastewater from corroding the heat pump 41. In addition, in the heat recovery unit 40, the heat pump 41 indirectly provides heat to the DIW flowing through the replenishment path 22 via the second heat exchanger 43. This ensures the pressure resistance of the heat pump 41 while easily maintaining the purity of the DIW, which is so-called ultrapure water. Here, "indirectly" means that the heat pump 41 is not connected to the discharge path 11 or the replenishment path 22, and heat may be exchanged between the heat pump 41 and the discharge path 11 or the replenishment path 22 in various ways.

[0044] As described above, the DIW from the DIW supply source 5 can be supplied to the portion 224 of the refill line 22 between the second heat exchanger 43 and the circulation tank 202 via the bypass line 223. It is preferable that the heat pump 41 be operated continuously as much as possible. If the DIW discharged from the second heat exchanger 43 becomes too hot due to continuous operation of the heat pump 41, the temperature of the DIW can be lowered before the DIW is supplied to the circulation tank 202 by opening the valve on the bypass line 223.

[0045] 2. The auxiliary path 221, which guides DIW from the circulation tank 202 to a portion 222 of the refill path 22 between the second heat exchanger 43 and the DIW supply source 5, is used to guide heated DIW via the auxiliary path 221 to the second heat exchanger 43 to maintain a steady state inside the second heat exchanger 43, for example, when starting up the heat recovery section 40. The auxiliary path 221 may branch off from a position between the pump 203 and the heater 204 in FIG.

[0046] Fig. 6 is a diagram showing another example of the heat recovery unit 40. In the example of Fig. 6, the medium tank 44 is omitted from the heat recovery unit 40 of Fig. 4, and the waste liquid tank 12 is provided on the discharge path 11. In Fig. 6, the same components as in Fig. 4 are denoted by the same reference numerals.

[0047] 6, a circulation path 425 is provided between the first heat exchanger 42 and the heat pump 41. The fresh water flowing in the circulation path 425 receives heat from the wastewater flowing in the discharge path 11 in the first heat exchanger 42 and is led to the heat pump 41.

[0048] As described above, waste liquid is intermittently discharged from the substrate processing apparatus 1. The heat recovery unit 40 has the waste liquid tank 12 on the discharge path 11, and the waste liquid is temporarily stored in the waste liquid tank 12. The waste liquid flows at a constant flow rate in the portion 111 of the discharge path 11 downstream of the waste liquid tank 12. This allows the waste liquid to pass through the first heat exchanger 42 at a constant flow rate, and provides a constant amount of heat per unit time to the fresh water on the heat pump 41 side. As a result, it becomes possible to operate the heat pump 41 in a constant state or at constant intervals, and stable operation of the heat recovery unit 40 is realized.

[0049] The above-described substrate processing system 10 is merely an example, and various configurations can be adopted as the substrate processing system 10. For example, the number of processing units 108 included in the substrate processing system 10 may be one or two or more. The number of substrate processing apparatuses 1 included in the substrate processing system 10 may be one.

[0050] Various structures can be employed for the first heat exchanger 42 and the second heat exchanger 43. Because the first heat exchanger 42 and the second heat exchanger 43 are connected directly or indirectly to the heat pump 41, it is preferable that the speed of the fluids in the two internal flow paths where heat exchange occurs be adjustable. However, the structure of these heat exchangers is not limited to this, and they may also have a simple structure in which a pipe through which one fluid flows is simply placed inside a tank that temporarily stores the other fluid. Various forms can be employed for the heat exchanger as long as it is capable of exchanging heat between the fluids flowing through the two flow paths.

[0051] The processing liquid supplied to the substrate 9 by the substrate processing apparatus 1, i.e., the processing liquid whose temperature is adjusted by the temperature adjustment unit 20 while circulating through the circulation path 201, is not limited to DIW. For example, a chemical liquid such as sulfuric acid, ammonia water, hydrogen peroxide, or hydrofluoric acid may be circulated through the circulation path 201 and have its temperature adjusted. These chemical liquids (substantially processing liquids) are mixed and discharged onto the substrate as a processing liquid such as SPM, SC1, or SC2. In this case, the DIW in the above description refers to a processing liquid containing a chemical liquid, and the replenishment path 22 replenishes the processing liquid to the temperature adjustment unit 20. As described above, the waste liquid discharged from the substrate processing apparatus 1 and from which heat is recovered in the heat recovery unit 40 may be various. Therefore, the processing liquid and the waste liquid may be different types of liquids or the same type of liquids.

[0052] When the treatment liquid is a chemical liquid such as SPM, SC1, or SC2, by providing a second heat exchanger 43 between the heat pump 41 and the replenishment path 22, it is not necessary for the heat pump 41 to have a corrosion-resistant structure.

[0053] Depending on the type of wastewater, the first heat exchanger 42 may be omitted. In this case, the discharge path 11 is led to the heat pump 41, and the heat of the wastewater is directly imparted to the heat pump 41. Similarly, depending on the type of processing liquid supplied to the substrate processing apparatus 1, the second heat exchanger 43 may be omitted. In this case, the processing liquid in the replenishment path 22 is directly heated by the heat pump 41. As described above, in the heat recovery unit 40, the peripheral configuration of the heat pump 41 that recovers heat from the wastewater and imparts heat to the processing liquid flowing through the replenishment path 22 can be modified in various ways. In any configuration, by using the heat pump 41 to heat the processing liquid flowing through the replenishment path 22 using the heat of the wastewater, it is possible to reduce the power required to heat the processing liquid while suppressing temperature changes of the processing liquid flowing through the circulation path 201.

[0054] 4, the substrate processing system 10 is provided with a medium tank 44, and in the example of Fig. 6, the substrate processing system 10 is provided with a waste liquid tank 12, but both tanks may be omitted or both tanks may be provided in the substrate processing system 10. Pumps, valves, filters, etc. are not shown in Fig. 4 and Fig. 6, but these may be provided as needed.

[0055] The substrates 9 processed in the substrate processing apparatus 1 are not limited to semiconductor wafers, but may be glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, substrates for FEDs (Field Emission Displays), substrates for optical disks, substrates for magnetic disks, and substrates for magneto-optical disks, etc. The layout of the substrate processing system 10 in Figure 1 is also merely an example, and the substrate processing system may not include a robot or may be a substrate processing system having only one substrate holder or one substrate rotation mechanism.

[0056] The configurations in the above-described embodiment and each modification may be combined as appropriate as long as they are not mutually contradictory. [Explanation of symbols]

[0057] 1. Substrate processing equipment 9 Substrate 10. Substrate Processing System 11 Exhaust channel 12 Drainage tank 20 Temperature control section 21 Supply route 22 Refill route 40 Heat recovery section 41 Heat Pump 42 1st heat exchanger 43 Second heat exchanger 44 Medium tank 200 Supply section 201 Circulation path 202 Circulation Tank 221 Auxiliary road

Claims

1. 1. A substrate processing system, comprising: a substrate processing apparatus that supplies a processing liquid to a substrate; a supply unit that introduces the processing liquid into the substrate processing apparatus; a heat recovery unit that recovers heat from wastewater discharged from the substrate processing apparatus; Equipped with The supply unit a temperature control unit that adjusts the temperature of the treatment liquid while circulating the treatment liquid in a circulation path; a supply path that guides the processing liquid from the temperature adjustment unit to the substrate processing apparatus; a replenishment path for replenishing the processing liquid to the temperature adjustment unit; Equipped with The heat recovery unit includes a heat pump that recovers heat from the waste liquid and provides the heat to the processing liquid flowing through the replenishment path.

2. 10. The substrate processing system of claim 1, The heat recovery unit further includes a heat exchanger, The substrate processing system, wherein the heat pump recovers heat indirectly from the effluent via the heat exchanger.

3. 3. The substrate processing system according to claim 2, The heat recovery unit further includes a medium tank disposed between the heat pump and the heat exchanger, the medium tank temporarily storing the heat medium from the heat exchanger.

4. 10. The substrate processing system of claim 1, The substrate processing system further comprises a waste liquid tank disposed on a discharge path through which the waste liquid flows, the waste liquid being temporarily stored therein.

5. 10. The substrate processing system of claim 1, The heat recovery unit further includes a heat exchanger, The heat pump indirectly provides heat to the processing liquid flowing through the replenishment path via the heat exchanger.

6. 6. The substrate processing system according to claim 5, the temperature adjustment unit includes a circulation tank on the circulation path, The treatment liquid that has passed through the heat exchanger is guided to the circulation tank through the replenishment path, The supply unit further includes an auxiliary path that guides the processing liquid in the circulation tank to the replenishment path at a position before the heat exchanger.

7. 7. The substrate processing system according to claim 1, The substrate processing system wherein the processing liquid is pure water.

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