Semiconductor equipment
The semiconductor device addresses conductor degradation and strength issues by using a dot structure and molybdenum conductor, enhancing the performance and integrity of memory cell transistors.
JP2026046313APending Publication Date: 2026-03-13KIOXIA CORP
Patent Information
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2024-09-02
- Publication Date
- 2026-03-13
Smart Images
Figure 2026046313000001_ABST
Abstract
To provide high-performance and high-strength semiconductor devices. [Solution] The first and second insulators are arranged with a gap between them in a first direction. The memory pillar extends in the first direction and penetrates the first and second insulators. The third insulator extends over the surface of the first insulator, the surface of the second insulator, and the first portion of the surface of the memory pillar between the first and second insulators. The multiple dot structures are on the surface of the third insulator, each containing a metallic or carbon element. The first conductor extends over the surface of the third insulator and the surfaces of the multiple dot structures. The second conductor contains molybdenum on the surface of the first conductor.
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Citation Information
Patent Citations
Semiconductor device and manufacturing method thereof
US20150303205A1