Semiconductor manufacturing equipment and semiconductor manufacturing method

Abstract

This technology provides a method for removing foreign matter generated by friction between the edges of the substrate and the transport section. [Solution] The semiconductor manufacturing apparatus includes a transport section with a pair of transport lanes for transporting substrates on which dies are placed, a foreign matter removal device provided on the transport lanes, and the transport lanes having a first groove and a second groove for transporting the substrates, and the first groove and the second groove being provided with suction ports for sucking up foreign matter.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor manufacturing apparatus, and is applicable, for example, to a die bonder including an apparatus for cleaning the periphery of the edge of a substrate and a transfer unit.

Background Art

[0002] As one step of the manufacturing process of a semiconductor device, a die separated from a wafer is picked up by a semiconductor manufacturing apparatus (for example, a die bonder), and the picked-up die is bonded to a substrate. A foreign matter removing apparatus for removing foreign matter (hereinafter referred to as foreign matter) on the substrate surface may be provided in the die bonder (for example, Japanese Patent Application Laid-Open No. 2019-160948).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technology capable of removing foreign matter generated by friction between the periphery of the edge of a substrate and a transfer unit. Other problems and novel features will become apparent from the description of this specification and the accompanying drawings.

Means for Solving the Problems

[0005] A summary of typical ones of the present disclosure is briefly described as follows. That is, a semiconductor manufacturing apparatus includes a transfer unit including a pair of transfer lanes for transferring a substrate on which a die is placed, a foreign matter removing apparatus provided in the transfer lane, the transfer lane has a first groove and a second groove for transferring the substrate, and suction ports for sucking foreign matter are provided in the first groove and the second groove.

Effects of the Invention

[0006] According to this disclosure, it is possible to remove foreign matter generated by friction between the edges of the substrate and the transport unit. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a schematic top view showing a die bonder in an embodiment. [Figure 2] Figure 2 is a diagram illustrating the schematic configuration as seen from the direction of arrow A in Figure 1. [Figure 3] Figure 3 is a block diagram showing the schematic configuration of the die bonder control system shown in Figure 1. [Figure 4] Figure 4 is a flowchart showing a method for manufacturing a semiconductor device using the die bonder shown in Figure 1. [Figure 5] Figure 5 is an enlarged plan view showing the dashed area B, which is the conveying lane of the die bonder in the embodiment shown in Figure 1. [Figure 6] Figure 6 is a cross-sectional view of the die bonder's transport section along the CC line shown in Figure 5. [Figure 7] Figure 7 illustrates the suction port as viewed from the direction of arrow E shown in Figure 6. [Figure 8] Figure 8 is a plan cross-sectional view illustrating the foreign object suction of the die bonder's transport section along the FF line shown in Figure 6. [Figure 9] Figure 9 is a schematic cross-sectional view illustrating the suction of foreign matter by a vacuum generator in an embodiment. [Figure 10] Figure 10 illustrates the foreign matter discharge flow in an embodiment. [Figure 11] Figure 11 is a graph illustrating the number of foreign matter generated in the prior art and embodiments. [Figure 12] Figure 12 is a table explaining the average number of foreign objects generated in Figure 11. [Figure 13] Figure 13 is a cross-sectional view illustrating the surface treatment of the transport section in the embodiment. [Figure 14] Figure 14 is a cross-sectional view of the conveying section of a die bonder illustrating the first modified example. [Figure 15] FIG. 15 is a view of the suction port of the die bonder for explaining the second modification. [Figure 16] FIG. 16 is a cross-sectional view of the conveyance unit of the die bonder for explaining the third modification.

Embodiments for Carrying Out the Invention

[0008] Hereinafter, embodiments and modifications will be described with reference to the drawings. However, in the following description, the same reference numerals may be assigned to the same components and repeated descriptions may be omitted. Note that, for the purpose of making the description clearer, the drawings may schematically represent the width, thickness, shape, etc. of each part as compared with the actual aspect. Also, the dimensional relationships and ratios of each element are not necessarily the same among a plurality of drawings.

[0009] The configuration of a die bonder, which is an embodiment of a semiconductor manufacturing apparatus, will be described with reference to FIGS. 1 and 2. FIG. 1 is a top view showing an outline of the die bonder in the embodiment. FIG. 2 is a view for explaining the schematic configuration when viewed from the direction of arrow A in FIG. 1.

[0010] The die bonder 1 generally includes a wafer supply unit 10, a pickup unit 20, an intermediate stage unit 30, a bonding unit 40, a conveyance unit 50, a substrate supply unit 60, a substrate carry-out unit 70, and a control unit (control device) 80. The Y2 - Y1 direction is the front - rear direction of the die bonder 1, the X2 - X1 direction is the left - right direction, and the Z1 - Z2 direction is the up - down direction. The wafer supply unit 10 is arranged on the front side of the die bonder 1, and the bonding unit 40 is arranged on the rear side.

[0011] The wafer supply unit 10 includes a wafer cassette lifter 11, a wafer holding table 12, a peeling unit 13, and a wafer recognition camera 14.

[0012] The wafer cassette lifter 11 moves up and down a wafer cassette (not shown) in which a plurality of wafer rings WR are stored to the wafer transfer height. A wafer alignment chute (not shown) aligns the wafer ring WR supplied from the wafer cassette lifter 11. A wafer extractor (not shown) takes out the wafer ring WR from the wafer cassette and supplies it to the wafer holding stage 12, or takes it out from the wafer holding stage 12 and stores it in the wafer cassette.

[0013] A wafer W is adhered (attached) to a dicing tape DT, and the wafer W is divided into a plurality of dice D. The dicing tape DT is held by the wafer ring WR. The wafer W is, for example, a semiconductor wafer or a glass wafer, and the die D is a semiconductor chip or a glass chip. A film-like adhesive material DF called a die attach film (DAF) may be attached between the wafer W and the dicing tape DT. The adhesive material DF cures by heating.

[0014] The wafer holding stage 12 is moved in the X1-X2 direction and the Y1-Y2 direction by a drive unit (not shown) and moves the die D to be picked up to the position of the peeling unit 13. Further, the wafer holding stage 12 rotates the wafer ring WR in the XY plane by a drive unit (not shown). The peeling unit 13 moves in the vertical direction by a drive unit (not shown). The peeling unit 13 peels the die D from the dicing tape DT.

[0015] The wafer recognition camera 14 recognizes the pick-up position of the die D picked up from the wafer W or performs a surface inspection of the die D.

[0016] The pickup unit 20 includes a pickup head 21 and a pickup head table 23. The pickup head 21 is provided with a collet 22 that adsorbs and holds the peeled die D at its tip. The pickup head 21 picks up the die D from the wafer supply unit 10 and places it on the intermediate stage 31. The pickup head table 23 moves the pickup head 21 in the Z1-Z2 direction, Y1-Y2 direction, and X1-X2 direction. The pickup head table 23 may also rotate the pickup head 21.

[0017] The intermediate stage section 30 includes an intermediate stage 31 on which the die D is placed, and a stage recognition camera 34 for recognizing the die D on the intermediate stage 31. The intermediate stage 31 is equipped with suction holes (not shown) for attracting the placed die D. The placed die D is temporarily held on the intermediate stage 31. The intermediate stage 31 is both a placement stage on which the die D is placed and a pickup stage on which the die D is picked up.

[0018] The bonding unit 40 includes a bond head 41, a bond head table 43, a substrate recognition camera 44, and a bond stage 46. The bond head 41 is provided with a collet 42 that adsorbs and holds the die D at its tip. The bond head table 43 moves the bond head 41 in the Z1-Z2, Y1-Y2, and X1-X2 directions. The bond head table 43 may also rotate the bond head 41. The substrate recognition camera 44 images the substrate S and recognizes the bond position. Here, the substrate S is, for example, a wiring board, a lead frame, a glass substrate, etc. Multiple product areas (hereinafter referred to as package areas P) that will ultimately form a single package are formed on the substrate S. Position recognition marks (not shown) for the package areas P are also formed on the substrate S. The bond stage 46 is raised when the die D is placed on the substrate S to support the substrate S from below. The bond stage 46 has a suction hole (not shown) for vacuum adsorption of the substrate S, and can fix the substrate S in place. The bond stage 46 also has a heating section (not shown) for heating the substrate S.

[0019] With this configuration, the bond head 41 corrects the pickup position and orientation based on the image data from the stage recognition camera 34 and picks up the die D from the intermediate stage 31. Then, the bond head 41 bonds the die onto the package area P of the substrate S based on the image data from the substrate recognition camera 44, or bonds it by stacking it on top of a die that has already been bonded onto the package area P of the substrate S.

[0020] The transport unit 50 includes transport claws 51 that grasp and transport the substrate S, and a transport lane (hereinafter referred to as a chute) 52 on which the substrate S moves. The substrate S moves in the X1 direction by driving nuts (not shown) of the transport claws 51 provided on the chute 52 with ball screws (not shown) provided along the chute 52. With this configuration, the substrate S moves from the substrate supply unit 60 along the chute 52 to the bonding position, and after bonding, moves to the substrate discharge unit 70 and hands over the substrate S to the substrate discharge unit 70.

[0021] The substrate supply unit 60 takes the substrates S that have been stored in a transport jig (not shown) and supplied to the transport unit 50. The substrate discharge unit 70 stores the substrates S that have been transported by the transport unit 50 into a transport jig (not shown).

[0022] Next, the control unit 80 will be explained using Figure 3. Figure 3 is a block diagram showing the schematic configuration of the die bonder control system shown in Figure 1.

[0023] The control system 8 comprises a control unit (control device) 80, a drive unit 86, a signal unit 87, and an optical system 88. The control unit 80 is broadly configured as a computer comprising a control / arithmetic unit 81 mainly composed of a CPU (Central Processing Unit), a storage device 82, an input / output device 83, a bus line 84, and a power supply unit 85. The storage device 82 has a main storage device 82a and an auxiliary storage device 82b. The main storage device 82a consists of RAM (Random Access Memory) which stores processing programs and the like. The auxiliary storage device 82b consists of an HDD (Hard Disk Drive) or SSD (Solid State Drive) which stores control data and image data necessary for control. In addition, the control unit 80 can be connected to an external storage device.

[0024] The input / output device 83 includes a monitor 83a that displays the device status and information, a pointing device such as a touch panel 83b for inputting operator instructions and a mouse 83c for operating the monitor 83a, and an image acquisition device 83d for acquiring image data from the optical system 88. The input / output device 83 further includes a motor control device 83e and an I / O signal control device 83f. The motor control device 83e controls the drive units 86 of the wafer supply unit 10, such as the XY table (not shown), pickup head table 23, and bond head table 43. The I / O signal control device 83f acquires signals from various sensors in the signal unit 87 and controls switches and volumes for controlling the brightness of lighting devices in the signal unit 87, valves for controlling vacuum suction, etc. The optical system 88 includes a wafer recognition camera 14, a stage recognition camera 34, and a substrate recognition camera 44. The wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 quantify light intensity and color. The control and calculation unit 81 receives necessary data via the bus line 84, performs calculations, and sends information to control the pickup head 21 and other components, as well as to the monitor 83a and other components.

[0025] The control unit 80 stores image data captured by the wafer recognition camera 14, stage recognition camera 34, and substrate recognition camera 44 via the image acquisition device 83d in the storage device 82. Based on the stored image data, programmed software uses the control / calculation device 81 to recognize the positions of the die D and the package area P of the substrate S, and to perform visual inspection of the die D and the substrate S. Based on the positions of the die D and the package area P of the substrate S calculated by the control / calculation device 81, the software moves the drive unit 86 via the motor control device 83e. This process recognizes the position of the die D on the wafer, operates the pickup head table 23 and the bond head table 43, and bonds the die D onto the package area P of the substrate S.

[0026] The control unit 80 can be configured by installing the above-mentioned program stored in an external storage device onto a computer. The external storage device includes, for example, an HDD, USB memory, or SSD. The auxiliary storage device 82b and the external storage device are configured as computer-readable recording media. Hereinafter, these will be collectively referred to simply as recording media. In this specification, when the term recording media is used, it may include only the auxiliary storage device 82b, only the external storage device, or both. Note that the provision of programs and data to the computer and the provision of programs and data from the computer to the external device may be performed using communication means such as the internet or a dedicated line, without using external storage devices.

[0027] A part of the semiconductor device manufacturing process using die bonder 1 (method of manufacturing a semiconductor device) will be explained with reference to Figure 4. Figure 4 is a flowchart of the method of manufacturing a semiconductor device using die bonder shown in Figure 1. In the following explanation, the operation of each part constituting die bonder 1 is controlled by control unit 80.

[0028] (Wafer loading process: Process S1) A wafer cassette containing wafer rings WR is loaded into the wafer cassette lifter 11. The loaded wafer rings WR are then supplied (transported) to the wafer holder 12.

[0029] (Substrate loading process: Process S2) A transport jig (not shown) containing the substrate S is fed into the substrate supply unit 60. In the substrate supply unit 60, the substrate S stored in the transport jig (not shown) is removed from the transport jig (not shown). It is then supplied (carried in) to the bonding unit 40 via the transport unit 50.

[0030] (Pickup process: Process S3) After step S1, the wafer holder 12 is moved so that the desired die D can be picked up from the dicing tape DT. The die D is imaged by the wafer recognition camera 14, and image data is acquired through imaging. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the wafer holder 12 from the die position reference point of the die bonder 1 is calculated, and positioning is performed. The die position reference point is a predetermined position on the wafer holder 12 that is held as the initial setting of the device. Surface inspection of the die D is performed by processing the image data.

[0031] The die D is peeled off from the dicing tape DT by the peeling unit 13 and the pickup head 21. The die D, peeled off from the dicing tape DT, is attracted and held by a collet 22 provided on the pickup head 21, and is transported to and placed on the intermediate stage 31.

[0032] The die D on the intermediate stage 31 is imaged by the stage recognition camera 34, and image data is acquired through imaging. By processing the image data, the amount of displacement (in the X, Y, and θ directions) of the die D on the intermediate stage 31 from the die position reference point of the die bonder 1 is calculated, and positioning is performed. The die position reference point is a predetermined position on the intermediate stage 31 that is held in advance as the initial setting of the device. Surface inspection of the die D is performed by processing the image data.

[0033] The pickup head 21, which has transported die D to the intermediate stage 31, is returned to the wafer supply unit 10. Following the procedure described above, the next die D is peeled off from the dicing tape DT, and thereafter, die D is peeled off one by one from the dicing tape DT following the same procedure.

[0034] (Bond process: Process S4) The transport unit 50 transports the substrate S to the bond stage 46. The substrate S placed on the bond stage 46 is imaged by the substrate recognition camera 44, and image data is acquired through imaging. By processing the image data, the amount of displacement of the substrate S from the substrate position reference point of the die bonder 1 (in the X, Y, and θ directions) is calculated. The substrate position reference point is a predetermined position of the bonding unit 40, which is held as the initial setting of the device.

[0035] In step S3, the suction position of the bond head 41 is corrected based on the amount of displacement of the die D on the intermediate stage 31 calculated, and the die D is picked up by the collet 42. The die D is bonded to a predetermined location on the substrate S supported by the bond stage 46 by the bond head 41, which has picked up the die D from the intermediate stage 31. The die D bonded to the substrate S is imaged by the substrate recognition camera 44, and an inspection is performed based on the image data acquired by the image to determine whether the die D has been bonded to the desired position (relative position inspection of die D and substrate S), etc.

[0036] The bond head 41, having bonded die D to substrate S, is returned to the intermediate stage 31. Following the procedure described above, the next die D is picked up from the intermediate stage 31 and bonded to substrate S. This process is repeated until die D is bonded to all package areas P on substrate S.

[0037] (Substrate unloading process: Process S5) The transport unit 50 transports the substrate S, to which the die D has been bonded, from the bonding unit 40 to the substrate unloading unit 70. In the substrate unloading unit 70, the substrate S is removed and stored in a transport jig (not shown), and the substrate S is unloaded. The transport jig (not shown) containing the substrate S is unloaded from the die bonder 1.

[0038] As described above, die D is mounted on substrate S and discharged from die bonder 1. Subsequently, for example, the transport jig containing substrate S with die D mounted on it is transported to the wire bonding process, where the electrodes of die D are electrically connected to the electrodes of substrate S via Au wire or the like. Then, substrate S is transported to the molding process, where die D and Au wire are sealed with molding resin (not shown) to complete the semiconductor package.

[0039] Next, the structure of the chute 52, which prevents the generation and adhesion of foreign matter to the substrate S, will be explained using Figures 5 to 9. Figure 5 is an enlarged plan view showing the dashed area B, which is the transport lane of the die bonder in the embodiment shown in Figure 1. Figure 6 is a cross-sectional view of the transport section of the die bonder along the CC line shown in Figure 5. Figure 7 is a diagram illustrating the suction port as seen from the direction of arrow E shown in Figure 6. Figure 8 is a plan cross-sectional view illustrating the foreign matter suction of the transport section of the die bonder along the FF line shown in Figure 6. Figure 9 is a schematic cross-sectional view illustrating the foreign matter suction by the vacuum generator in the embodiment.

[0040] The substrate S is transported to the bonding section 40 by a pair of chutes 52 provided in the transport section 50 of the die bonder 1. At this time, friction occurs, for example, between the edges of the back surface of the substrate S and the chutes 52. This friction can generate foreign matter, which may adhere to the substrate S. When this phenomenon occurs, it can have a significant impact on the manufacturing yield in the die bonder 1.

[0041] Each pair of chutes 52 is provided with a first groove 201 and a second groove 202 for transporting the substrate S, and a suction port 103 is provided on the side of the first groove 201. Furthermore, to accommodate the warping of the substrate S, the transport section 50 is also provided with an underplate 53 equipped with a vertically movable drive mechanism 56. In addition, as a component of the transport section 50, the chutes 52 are supported on both the first groove 201 side and the second groove 202 side by chute support sections 54. These first groove 201 and second groove 202 are subjected to a buff surface treatment 401, which will be described later. Moreover, it is desirable that the underplate 53, which comes into contact with the back surface of the substrate S, also be subjected to this buff surface treatment 401.

[0042] During transport of the substrate S, the substrate S comes into contact with the first groove 201 and the second groove 202, causing friction as they rub against each other, which increases the likelihood of the aforementioned foreign matter being generated and adhering to the substrate S. To discharge this foreign matter from the chute 52, suction ports 103 connected to air tube 101A and 104 connected to air tube 101B are provided in the first groove 201, and suction port 105 connected to air tube 101C is provided in the second groove 202, which is opposite the first groove 201. These air tubes 101A, 101B, and air tube 101C, which crosses the lower part of the underplate 53, merge as air tube 101 before the vacuum generator 301, which will be described later. In addition, the suction ports 103 and 104 of the first groove 201 open in the Y2 direction, and the suction port 105 of the second groove 202 opens in the Y1 direction, facing the substrate S being transported. Furthermore, to efficiently suction foreign matter generated by friction during the transport of the substrate S, the suction path can be bent in the X1 direction, i.e., towards the transport direction of the substrate S, thereby increasing the opening area.

[0043] These air tubes 101A, 101B, and 101C may join air tube 101 at any point before the vacuum generator 301 described later, or they may be connected directly to the vacuum generator 301.

[0044] Furthermore, although the air tubes 101A, 101B, and 101C are straight on the chute support section 54, they may be curved or have an angled bend, as long as the structure does not affect the suction of foreign matter.

[0045] The air tube 101A, to which the suction port 103 located in the first groove 201 of the chute 52 is connected, is fixed to the chute 52 by a component such as a nut 57. However, the method of fixing the air tube 101A is not limited to this, and other components besides the nut 57 may be used if they can be used to fix it. Of course, the methods of fixing the air tube 101B connected to the suction port 104 and the air tube 101C connected to the suction port 105 (not shown) are the same as those for the air tube 101A.

[0046] Here, we will describe the shape of the suction ports. The suction ports 103 and 104 have, for example, a roughly circular shape and open toward the Y2 direction, so they appear elliptical from the direction of arrow E. Also, since they open with the same diameter as the height of the first groove 201, foreign matter generated in the groove can be efficiently suctioned. The structure of the suction port 105 (not shown) provided in the second groove 202 is similar.

[0047] Next, using Figures 8 and 9, we will explain how to expel foreign matter generated by friction between the substrate S and the chute 52 to the outside of the die bonder 1.

[0048] Foreign matter sucked in from suction ports 103, 104, and 105 converges in the air tube 101, as indicated by the arrows in Figure 8. This air tube 101 is connected to the vacuum generator 301 shown in Figure 9. The vacuum generator 301 and the air tube 101 constitute the foreign matter removal device 300, which is installed in the transport unit 50 as shown in Figure 1. Furthermore, the vacuum generator 301 consists of a suction cylinder 302 that sucks in foreign matter from suction ports 103, 104, and 105 via the air tube 101, an air supply cylinder 303 through which compressed air G is supplied from a compressor 305 located outside the die bonder 1, a nozzle 306 that restricts this compressed air G, and an exhaust cylinder 304 that discharges the sucked-in foreign matter from the exhaust port 307. This foreign matter removal device 300 is controlled by the control unit 80. The vacuum generator 301 may be, for example, a vacuum generator in which the compressor 305 or the intake pipe 303 and the exhaust port 307 are located in a non-linear configuration, and is not necessarily limited to the structure shown in Figure 9.

[0049] Next, Figure 10 will be used to explain the foreign matter discharge flow using the foreign matter removal device 300. Figure 10 is a diagram illustrating the foreign matter discharge flow in an embodiment.

[0050] (Substrate loading process: Process S21) A transport jig (not shown) containing the substrate S is fed into the substrate supply unit 60. In the substrate supply unit 60, the substrate S is removed from the transport jig (not shown) and transported into the chute 52 of the transport unit 50. At this time, friction occurs between the edges on the back surface of the substrate S and the chute 52.

[0051] (Compressed air supply process: Process S22) The vacuum generator 301 can generate a vacuum inside the chamber by supplying compressed air G from the compressor 305. The compressed air G from the compressor 305, which is located outside the die bonder 1, is narrowed by the nozzle 306 and discharged at high speed from the exhaust port 307 of the exhaust pipe 304.

[0052] (Vacuum generation process: process S23) As the compressed air G passes through the nozzle 306 and its flow velocity increases, the pressure in the flow path within the exhaust pipe 304 decreases, creating a vacuum.

[0053] (Foreign matter suction process: Process S24) By creating a vacuum, foreign matter generated by friction between the edges of the back surface of the substrate S and the chute 52 can be sucked in through the suction ports 103 and 104 of the first groove 201 and the suction port 105 of the second groove 202 of the chute 52 and drawn into the air tube 101.

[0054] (Foreign matter discharge process: Process S25) Foreign matter drawn into the vacuum generator 301 is sent from the air tube 101 to the exhaust port 307 by the vacuum in the exhaust stack 304, and discharged to the outside of the foreign matter removal device 300 as shown by the dashed arrow. Then, it is discharged outside the area where the die bonder 1 is installed through the exhaust pipe (not shown) connected to the exhaust port 307.

[0055] In the foreign matter removal device 300, we have described the foreign matter generated by friction between the edges of the back surface of the substrate S and the chute 52. However, foreign matter such as particles that are not caused by friction and are already attached to the substrate S can also be discharged during transport in the chute 52. As shown in Figure 6, there is a gap between the edges of the substrate S and the edges of the front surface and the first groove 201 and the second groove 202. As described above, the suction paths of the suction ports 103, 104 and 105 are bent toward the transport direction of the substrate S, and the opening area is enlarged, so suction at these suction ports generates an airflow in the opposite direction to the transport of the substrate S. Therefore, not only foreign matter generated by friction, but also foreign matter already attached to the substrate S can be sucked into the suction ports 103, 104 and 105 and discharged.

[0056] Next, the particle size and number of foreign matter generated by friction will be explained using Figures 11 and 12, showing the results of 50 repeated measurements in the case of the conventional technology, when the chute 52 is surface-treated with a buff 401, and when it is further suctioned by a vacuum generator 301. Figure 11 is a graph illustrating the number of foreign matter generated in the conventional technology and the embodiment. Figure 12 is a table illustrating the average number of foreign matter generated in Figure 11.

[0057] Figure 11 shows the results of transporting a substrate S 50 times under the same conditions using the die bonder 1, and measuring the number of foreign particles present inside the grooves of the chute 52, which has a first groove 201 and a second groove 202, for particles of 0.5 μm or larger, and for particles of 1.0 μm or larger. The transport order was as follows: (a) no surface treatment inside the grooves of the chute 52, (b) with buff surface treatment 401 with an arithmetic mean roughness Ra of 0.2, and finally, (c) after buff surface treatment 401, with the foreign matter removed by the foreign matter removal device 300 described above at 8 L / min. Figure 12 is a table summarizing the average number of particles from the results in Figure 11.

[0058] These results show that for both particle sizes, the particle count relationship is as follows: buff surface treatment 401 + suction (c) < buff surface treatment 401 (b) < conventional technology (a). In particular, in the case of buff surface treatment 401 + suction (c), a significant reduction in the number of particles is obtained. In summary, it can be seen that not only the suction by the foreign matter removal device 300 of this embodiment, but also the surface condition for friction reduction by buffing the chute 52 has a significant effect.

[0059] Next, surface treatments other than the buff surface treatment 401 of the chute 52 will be explained using Figure 13. Figure 13 is a cross-sectional view illustrating the surface treatment of the transport section in the embodiment. As shown in Figure 13, the first groove 201 and the second groove 202 of the chute 52 are each treated with a surface treatment 402 other than the buff surface treatment 401, such as a diamond-like carbon coating, ceramic coating, jet surface processing, or blast treatment, which prevents foreign matter from adhering to the surface and reduces friction with the substrate S, and have the same effect as the buff surface treatment 401.

[0060] In addition, the underplate 53 of the transport section 50 can also be subjected to surface treatment 402, such as diamond-like carbon coating, ceramic coating, jet surface treatment, or blast treatment, similar to the buff surface treatment 401 described above, to prevent foreign matter generated during transport other than foreign matter caused by friction between the chute 52 and the substrate S, as well as the adhesion of existing foreign matter to the back surface of the substrate S. In particular, the transported substrate S is highly likely to be warped due to stress, and the underplate 53 may be moved up and down by a drive unit (not shown) to accommodate the warping. Therefore, such surface treatment on the movable underplate 53 is effective as a measure against foreign matter on the back surface of the substrate S.

[0061] Although the present disclosure has been described in detail based on embodiments, it goes without saying that the present disclosure is not limited to the above embodiments and can be modified in various ways.

[0062] According to this embodiment, one or more of the following effects can be obtained.

[0063] Suction ports 103 and 104 are provided in the first groove 201 of the chute 52, and a suction port 105 is provided in the second groove 202. Since the suction path is bent in the direction in which the substrate S is transported, vacuum suction can be performed in the opposite direction to the direction in which the substrate S is transported. As a result, foreign matter generated by friction between the edges of the back surface of the substrate S and the chute 52 during transport can be discharged without adhering to the substrate S, and the risk of introducing and releasing foreign matter into the bonding portion 40 of the substrate S can be reduced.

[0064] By removing foreign matter as described above, a clean environment can be maintained within the die bonder 1 during the transport of the substrate S.

[0065] Surface treatment processes such as the buff surface treatment 401 on the chute 52 prevent grinding around the edges on the back surface of the substrate S, thereby suppressing the generation of foreign matter.

[0066] Since foreign matter is removed each time the substrate S is transported, the frequency of maintenance work by the operator, i.e., the foreign matter removal work on the chute 52, can be reduced.

[0067] The following are some examples of typical modifications of the embodiments. In the following descriptions of modifications, the same reference numerals as in the embodiments described above may be used for parts having the same configuration and function as those described in the embodiments described above. Furthermore, the descriptions of such parts may be appropriately referenced from the embodiments described above, to the extent that they do not contradict the technical standards. In addition, some of the embodiments described above, and all or some of the modifications, may be applied in combination as appropriate, to the extent that they do not contradict the technical standards.

[0068] <First Torture> As a first modification, the position of the suction port of the transport section 50 of the die bonder 1 will be described. Figure 14 is a cross-sectional view of the transport section of the die bonder illustrating the first modification. Except for the position of the suction port 106 of the first groove 201 in the chute 52, it is the same as the embodiment described above. In the first modification, the suction port 106 is provided below the first groove 201 of the chute 52. As with the embodiment, suction ports (not shown) are also provided below the first groove 201 at other positions, and also in the second groove 202. Furthermore, the suction path can be bent toward the transport direction of the substrate S to enlarge the opening area.

[0069] By positioning it downwards in this manner, it becomes possible to efficiently suck up foreign matter from all directions within the groove, including foreign matter that naturally falls due to friction between the chute 52 and the back surface of the substrate S. The suction port 106 here can be approximately circular as described above, or approximately rectangular as described later.

[0070] Furthermore, providing suction ports below the first groove 201 and the second groove 202 reduces the area where friction occurs between the substrate S and the chute 52, which also helps to suppress the generation of foreign matter.

[0071] <Second variation> As a second modification, the shape of the suction port of the transport section 50 of the die bonder 1 will be described. Figure 15 is a diagram of the suction port of the die bonder illustrating the second modification. Similar to the embodiment, it is a schematic diagram from the Y2 direction, and the suction ports 107 and 108 provided in the first groove 201 have a substantially rectangular shape. The suction ports 107 and 108 open facing the substrate S being transported. Furthermore, since they open at the same height as the first groove 201, foreign matter generated in the groove can be efficiently sucked up. Of course, a substantially rectangular suction port (not shown) is also provided in the second groove 202. In addition, in order to efficiently suck up foreign matter, the longer side of the substantially rectangular opening can be extended in the X1 direction, i.e., toward the transport direction of the substrate S, and the suction path can be bent toward the transport direction of the substrate S, similar to the embodiment.

[0072] By making the shape roughly rectangular, the cross-sectional area of ​​the suction ports 107 and 108 is increased, allowing more foreign objects to be aspirated in a single suction, and enabling it to accommodate a wider range of foreign object sizes.

[0073] In Figure 15, it is shown to be located to the side of the first groove 201 of the chute 52, but it goes without saying that it can also be located below the first groove 201 and the second groove 202, respectively.

[0074] In these first and second modified examples, the suction port can be directed in the direction in which the substrate S is transported, and vacuum suction can be performed in the opposite direction. This allows foreign matter generated by friction during transport between the substrate S and the chute 52 to be discharged from the die bonder 1, further reducing the risk of releasing foreign matter into the transport section 50.

[0075] Furthermore, when using these first and second modified forms, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0076] <Third variation> As a third modification, the discharge of foreign matter from the transport section 50 of the die bonder 1 will be described. Figure 16 is a cross-sectional view of the transport section of the die bonder illustrating the third modification. In Figure 16, in addition to the vacuum generator 301 used in the above-described embodiment, a blow device 600 for removing foreign matter from the surface of the substrate S is used. A blow generator 602 equipped with a nozzle 601 is provided in the Z1 direction above the transport section 50. By using a movable nozzle 601 whose tip direction and position can be changed, foreign matter can be reliably sucked up from the suction port 103 after blowing the surface of the substrate S. Of course, as in the embodiment, suction ports (not shown) are also provided at other positions in the first groove 201 and in the second groove 202.

[0077] The blowers used include, for example, an air blower that continuously blows a constant amount of air, a pulse blower that oscillates air by rapidly switching a switching valve ON / OFF, or an ionizer blower that neutralizes static electricity with ions to remove static charge or dust. By using these blowers, foreign matter can be removed from at least the dashed area 500 in Figure 16, including the first groove 201 and the second groove 202.

[0078] This system can remove not only foreign matter generated by friction between the chute 52 and the edges of the back surface of the substrate S, but also foreign matter present on the surface of the substrate S.

[0079] The disclosure made by the Discloser has been described in detail above based on embodiments and modifications, but it goes without saying that the disclosure is not limited to the above embodiments and modifications and can be modified in various ways.

[0080] For example, in this embodiment, the foreign matter removal device 300 is provided in the chute 52, but it may also be provided in an empty space inside the die bonder 1, taking into consideration the efficiency of the internal space of the die bonder 1, rather than in the chute 52.

[0081] In this embodiment, an example using a die attach film (DAF) has been described, but a preform section for applying adhesive to the substrate S may be provided instead of using a DAF. The preform section includes a preform head for applying paste-like adhesive, a preform table for driving the preform head in the vertical and horizontal directions, and a preform stage for holding the substrate.

[0082] In this embodiment, a die bonder 1 was described in which a die D is picked up from a wafer supply unit 10 by a pickup head 21 and placed on an intermediate stage 31, and the die D placed on the intermediate stage 31 is bonded to a substrate S by a bond head 41. However, the invention is not limited to this, and can also be applied to die bonders in which a die is picked up from a wafer supply unit by a bond head and bonded to a substrate.

[0083] For example, it can also be applied to die bonders that lack an intermediate stage 31 and a pickup head 21, and instead bond the die of the wafer supply unit to the substrate using a bond head.

[0084] Furthermore, it can be applied to a flip-chip bonder that lacks an intermediate stage 31, picks up a die from the wafer supply unit, inverts the flip pickup head to transfer the die to the bond head, and then bonds it to the substrate with the bond head.

[0085] In this embodiment, a die bonder 1 was used as an example, but it can also be applied to mounting equipment that uses suction to pick up a workpiece and places the picked-up workpiece on a substrate or the like. [Explanation of Symbols]

[0086] 1. Die bonder (semiconductor manufacturing equipment) 50... Conveyor section 52... Chute (transport lane) 103, 104, 105, 106, 107, 108...Suction port 201...first groove 202...Second groove 300...Foreign object removal device

Claims

1. A transport unit equipped with a pair of transport lanes for transporting substrates on which dies are placed, A foreign object removal device provided in the aforementioned transport lane, The transport lane has a first groove and a second groove for transporting the substrate, A semiconductor manufacturing apparatus comprising a suction port for sucking foreign matter into the first groove and the second groove.

2. In the semiconductor manufacturing apparatus according to claim 1, The foreign matter removal apparatus is a semiconductor manufacturing apparatus that removes foreign matter adhering to the substrate or foreign matter generated by friction between the substrate and the transport lane.

3. In the semiconductor manufacturing apparatus according to claim 2, The semiconductor manufacturing apparatus is provided with at least one suction port in the first groove and the second groove.

4. In the semiconductor manufacturing apparatus of claim 3, The aforementioned foreign matter removal device comprises a vacuum generator and an air tube, A semiconductor manufacturing apparatus in which the suction port and the vacuum generator are connected by the air tube.

5. In the semiconductor manufacturing apparatus of claim 4, The foreign matter removal device is a semiconductor manufacturing apparatus that uses compressed air supplied to the air supply cylinder of the vacuum generator to suck the foreign matter, which is sucked in through the air tube from the suction port, and discharges it from the exhaust port of the exhaust cylinder of the vacuum generator.

6. In the semiconductor manufacturing apparatus of claim 4, The foreign matter removal device is a semiconductor manufacturing apparatus in which the air tubes connected to the suction ports of the first groove and the second groove merge and are connected to the vacuum generator.

7. In the semiconductor manufacturing apparatus according to claim 1, The conveying lane is a semiconductor manufacturing apparatus in which the inside of the first groove and the second groove are buffed surface treated.

8. In the semiconductor manufacturing apparatus according to claim 1, The conveying lane is a semiconductor manufacturing apparatus in which the interiors of the first groove and the second groove are surface-treated with one of the following: diamond-like carbon coating, ceramic coating, jet surface treatment, or blast treatment.

9. In the semiconductor manufacturing apparatus according to claim 1, The aforementioned transport unit is a semiconductor manufacturing apparatus in which the surface of the underplate is buffed.

10. In the semiconductor manufacturing apparatus according to claim 1, The transport section is a semiconductor manufacturing apparatus in which the surface of the underplate is surface-treated by one of the following: diamond-like carbon coating, ceramic coating, jet surface treatment, or blast treatment.

11. In the semiconductor manufacturing apparatus of claim 9 or claim 10, The underplate is a semiconductor manufacturing apparatus that can move up and down to accommodate the warping of the substrate.

12. In the semiconductor manufacturing apparatus of claim 3, The suction port is provided to the side or below the first groove and the second groove of the semiconductor manufacturing apparatus.

13. In the semiconductor manufacturing apparatus of claim 12, The aforementioned suction port is an opening facing the substrate being transported in the semiconductor manufacturing apparatus.

14. In the semiconductor manufacturing apparatus of claim 12, The suction port is approximately circular or rectangular in shape in the semiconductor manufacturing apparatus.

15. In the semiconductor manufacturing apparatus according to claim 1, A semiconductor manufacturing apparatus equipped with a blow device above the aforementioned transport section.

16. A pair of transport lanes for transporting substrates on which dies are placed, A foreign object removal device provided in the aforementioned transport lane, The transport lane has a first groove and a second groove for transporting the substrate, A method for manufacturing a semiconductor device using a die bonder equipped with a suction port for discharging foreign matter into the first groove and the second groove, A step of removing the foreign matter from the substrate, A method for manufacturing a semiconductor device containing [a specific component].

17. In the method for manufacturing a semiconductor device according to claim 16, The step of removing the foreign matter is a method for manufacturing a semiconductor device, which involves removing the foreign matter adhering to the substrate or the foreign matter generated by friction between the substrate and the transport lane.

18. In the method for manufacturing a semiconductor device according to claim 17, The method for manufacturing a semiconductor device involves the step of removing the foreign matter, which involves sending compressed air to a vacuum generator and discharging the foreign matter from the suction port connected to the vacuum generator by an air tube.

19. In the method for manufacturing a semiconductor device according to claim 18, The method for manufacturing a semiconductor device involves adding one of the following steps to remove the foreign matter: air blowing, pulse blowing, or ionizer blowing.

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