Method for manufacturing a semiconductor device using dicing tape, and dicing tape

Abstract

To provide high-quality semiconductor devices while suppressing chip breakage at the outermost edge of the workpiece. [Solution] The method for manufacturing a semiconductor device according to the embodiment includes: attaching a dicing tape, which comprises a substrate, an adhesive material provided on the upper surface of the substrate and containing a material that can be altered by light irradiation, and a release film provided so as to overlap the portion of the adhesive material when viewed from above, to a ring frame; irradiating the substrate with light from below so that the adhesiveness of the first portion of the upper surface of the adhesive material that overlaps with the release film when viewed from above differs from the adhesiveness of the second portion of the upper surface of the adhesive material that does not overlap with the first portion; aligning the center of the workpiece with the center of the region on the dicing tape where the release film is provided, and attaching the workpiece to the adhesive material; and dicing the workpiece to make each of a plurality of semiconductor devices into individual pieces.

Description

Technical Field

[0001] Embodiments of the present invention relate to a method for manufacturing a semiconductor device using a dicing tape and to the dicing tape.

Background Art

[0002] When dicing a wafer on which a plurality of semiconductor devices are formed, the wafer is fixed on a ring frame via a dicing tape. Then, the fixed wafer is cut by dicing using a blade, so that each of the plurality of semiconductor devices is separated into individual pieces.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0004] To provide a high-quality semiconductor device while suppressing chip jumping at the outermost periphery of the workpiece.

Means for Solving the Problems

[0005] A method for manufacturing a semiconductor device according to an embodiment includes: attaching a dicing tape, which comprises a substrate, an adhesive material provided on the upper surface of the substrate and containing a material that can be altered by light irradiation, and a release film provided so as to overlap the portion of the adhesive material when viewed from above, to a ring frame; irradiating the substrate with light from below so that the adhesiveness of a first portion of the upper surface of the adhesive material that overlaps with the release film when viewed from above differs from the adhesiveness of a second portion of the upper surface of the adhesive material that does not overlap with the first portion; aligning the center of the workpiece with the center of the region on the dicing tape where the release film is provided, and attaching the workpiece to the adhesive material; and dicing the workpiece to separate each of a plurality of semiconductor devices into individual pieces. [Brief explanation of the drawing]

[0006] [Figure 1] A cross-sectional view showing an example of a dicing tape according to the embodiment. [Figure 2] A top view showing an example of a dicing tape according to the embodiment. [Figure 3] A cross-sectional view illustrating a method for manufacturing a semiconductor device using a dicing tape according to an embodiment. [Figure 4] A top view illustrating a method for manufacturing a semiconductor device using a dicing tape according to an embodiment. [Figure 5] A cross-sectional view illustrating a method for manufacturing a semiconductor device using a dicing tape according to an embodiment. [Figure 6] A top view illustrating a method for manufacturing a semiconductor device using a dicing tape according to an embodiment. [Figure 7] A cross-sectional view showing an example of a modified dicing tape. [Figure 8] A bottom view showing an example of dicing tape related to a modified example. [Figure 9] A cross-sectional view illustrating a method for manufacturing a semiconductor device using a modified dicing tape. [Figure 10]A top view illustrating a method for manufacturing a semiconductor device using a modified dicing tape. [Figure 11] A cross-sectional view illustrating a method for manufacturing a semiconductor device using a modified dicing tape. [Figure 12] A top view illustrating a method for manufacturing a semiconductor device using a modified dicing tape. [Modes for carrying out the invention]

[0007] Embodiments are described below with reference to the drawings. The dimensions and proportions in the drawings are not necessarily the same as those in reality.

[0008] In the following explanation, components having substantially the same function and structure will be assigned the same reference numeral. When elements with similar structures need to be specifically distinguished, different letters or numbers may be added to the end of the same reference numeral.

[0009] 1 Embodiment The dicing tape according to the embodiment will be described below.

[0010] In the following, the wafer used as the object to be diced using dicing tape will also be referred to as the workpiece or workpiece. The direction within the plane of the dicing tape will be called the X direction. Within that plane, the direction perpendicular to the X direction will be called the Y direction. The direction perpendicular to that plane will be called the Z direction. In the dicing tape, of the side on which the workpiece is fixed and the side on which the ring frame is placed, the side on which the workpiece is fixed will be called the upper side. In the dicing tape, of the side on which the workpiece is fixed and the side on which the ring frame is placed, the side on which the ring frame is placed will be called the lower side. In the dicing tape, of the side on which the workpiece is fixed and the side on which the ring frame is placed, the side on which the workpiece is fixed will be called the upper surface. In the dicing tape, of the side on which the workpiece is fixed and the side on which the ring frame is placed, the side on which the ring frame is placed will be called the lower surface or back surface.

[0011] The configuration of the dicing tape according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a cross-sectional view showing an example of the dicing tape according to the embodiment. The cross-sectional view of FIG. 1 is a cross-sectional view in the XZ plane. Further, FIG. 2 is a top view showing an example of the dicing tape according to the embodiment.

[0012] The dicing tape 1 includes a base material 10, an adhesive material 20, and a release film 30.

[0013] The base material 10 is made of a material having expandability. The material includes, for example, polyolefin. The base material 10 has light transmissibility with respect to light such as ultraviolet rays (UV light). The base material 10 has, for example, a circular shape when viewed from above. The diameter of the base material 10 when viewed from above is a length R1. The length R1 is larger than the length RW of the diameter of the work to be diced (RW < R1).

[0014] The adhesive material 20 is provided on the upper surface of the base material 10. The adhesive material 20 includes a material that is altered by a curing reaction by light irradiation such as a laser or a lamp. The light from the laser or lamp is, for example, ultraviolet rays. That is, the material is a UV-curable material. The adhesive force of the material becomes weaker as the curing reaction progresses. The curing reaction of the above material is affected by the inhibition of the reaction by oxygen. Thereby, for example, in the portion of the surface of the adhesive material 20 that contacts the region containing oxygen, the speed of the curing reaction of the adhesive material 20 is slower than that in the portion that contacts the region having a lower oxygen concentration than the portion. The adhesive material 20 has, for example, a circular shape when viewed from above. The diameter of the adhesive material 20 when viewed from above is substantially equal to the diameter of the base material 10, for example.

[0015] A release film 30 is provided on the upper surface of the adhesive material 20. The release film 30 has non - adhesiveness. The release film 30 is configured to be peelable from the upper surface of the adhesive material 20. The release film 30 has, for example, a circular shape when viewed from above. The diameter of the release film 30 when viewed from above is length R2. The length R2 is smaller than the length RW (R2 < RW). The difference between the length R2 and the length RW is, for example, 2 mm or more and 30 mm or less (2 mm ≤ (RW - R2) ≤ 30 mm). With the above - described configuration, the upper surface of the adhesive material 20 includes a first portion that contacts the lower surface of the release film 30 and a second portion that does not contact the lower surface of the release film 30. With such a configuration, the release film 30 is configured such that, in the first portion, the contact between the upper surface of the adhesive material 20 and oxygen is suppressed as compared with the second portion. When viewed from above, the second portion has, for example, a ring - shaped (doughnut - shaped) structure that is rotationally symmetric about the Z - axis. In the Y - direction, the distance D1 from one end or the other end of the adhesive material 20 to one end or the other end of the release film 30 is, for example, about 20 mm. Also, in the X - direction, the distance from one end or the other end of the adhesive material 20 to one end or the other end of the release film 30 is, for example, about 20 mm.

[0016] Next, a method for manufacturing a semiconductor device using the dicing tape 1 according to the embodiment will be described with reference to FIGS. 3, 4, 5, and 6. FIGS. 3 and 5 are cross - sectional views for explaining the method for manufacturing a semiconductor device using the dicing tape according to the embodiment. FIGS. 3 and 5 correspond to the cross - sectional views shown in FIG. 1. FIGS. 4 and 6 are top views for explaining the method for manufacturing a semiconductor device using the dicing tape according to the embodiment.

[0017] First, the dicing tape 1 is attached to the ring frame RF. At this time, the dicing tape 1 is attached such that the back surface of the dicing tape 1 contacts the ring frame RF. That is, the lower surface of the base material 10 of the dicing tape 1 contacts the ring frame RF.

[0018] Then, for example, as shown in Figure 3, UV light irradiation from a laser or lamp is performed on the area where the release film 30 is provided, from the back side of the dicing tape 1 attached to the ring frame RF. By performing such light irradiation, the adhesiveness of the first portion of the upper surface of the adhesive material 20 that overlaps with the release film 30 is made different from the adhesiveness of the second portion of the upper surface of the adhesive material 20 that does not overlap with the release film 30. The process of performing this light irradiation will be explained in more detail. This process is performed in an atmosphere where oxygen is present, such as in an air atmosphere. In Figure 3, this light irradiation is shown as "hν". The curing reaction of the adhesive material 20 proceeds due to the above-mentioned light irradiation. At this time, in the second portion of the adhesive material 20 that does not come into contact with the lower surface of the release film 30, the curing reaction proceeds more slowly than in the first portion of the adhesive material 20 that comes into contact with the lower surface of the release film 30 due to reaction inhibition by oxygen. For this reason, the adhesive strength in the second portion can be made stronger than that in the first portion by the above-mentioned light irradiation. In other words, the adhesive material 20 has areas with weak adhesive strength and areas with strong adhesive strength. In the above process, the areas of the adhesive material 20 with weak adhesive strength may be non-adhesive.

[0019] Then, after the light irradiation described above, the release film 30 is peeled off from the adhesive material 20. As a result, the entire upper surface of the adhesive material 20 is exposed. This exposes the portion WA1 with weak adhesive strength and the portion SA1 with strong adhesive strength, as shown in Figure 4. Portions WA1 and SA1 correspond to the first and second portions of the adhesive material 20, respectively. In Figure 4, portion SA1 is shown by diagonal lines.

[0020] Furthermore, as shown in Figure 5, a workpiece W with multiple semiconductor devices formed on it is fixed onto the adhesive material 20 where portions WA1 and SA1 are exposed. At this time, the workpiece W is attached to the adhesive material 20 such that the center of the workpiece W (the center of the semiconductor substrate of the workpiece W) corresponds to the center of the area from which the release film 30 has been peeled off. Note that aligning the center of the workpiece W with the center of the area from which the release film 30 has been peeled off includes making the two centers coincide when viewed from above, and positioning the two centers at approximately the same location. As described above, length R2 is smaller than length RW, which is the diameter of the workpiece W. As a result, as shown in Figure 6, the workpiece W is fixed so that its lower surface covers the entire portion WA1 with weak adhesive force. Also, when viewed from above, the outer periphery of the workpiece W is fixed so that it is in ring-shaped contact with the portion SA1 with strong adhesive force. In Figure 6, the outer periphery of the workpiece W in contact with portion SA1 is shown by diagonal lines.

[0021] Then, as described above, the workpiece W fixed on the adhesive material 20 is diced by a blade or the like. This separates each of the multiple semiconductor devices into individual pieces.

[0022] According to this embodiment, it is possible to provide a high-quality semiconductor device while suppressing chip breakage at the outermost edge of the workpiece.

[0023] The dicing tape 1 according to this embodiment includes a base material 10, an adhesive material 20, and a release film 30. The adhesive material 20 is provided on the upper surface of the base material 10. The adhesive material 20 includes a material that can be altered by light irradiation such as a laser or lamp. The release film 30 is configured to be peelable. Also, when viewed from above, the outer diameter of the release film 30 is smaller than the outer diameter of the workpiece W. During dicing of the workpiece W, the photocuring reaction is inhibited by the release film 30 during light irradiation, forming a portion SA1 with strong adhesive force and a portion WA1 with weak adhesive force on the upper surface of the adhesive material 20. By attaching the workpiece W to the adhesive material 20 on which such portions SA1 and WA1 are formed, it is possible to provide a high-quality semiconductor device while suppressing chip breakage at the outermost edge of the workpiece.

[0024] To elaborate, in dicing using a blade, when cutting a circular workpiece, a roughly triangular semiconductor substrate (a non-rectangular chip) smaller than the chip size of the semiconductor device is formed at the outermost edge of the workpiece. If a dicing tape with weak adhesive strength is used, this roughly triangular semiconductor substrate may peel off and scatter. This is called chip flying. In dicing, there is a problem that the blade may be damaged due to such chip flying. One solution to this problem is to increase the adhesive strength of the dicing tape applied to the substrate. However, in this case, the adhesive material of the dicing tape becomes softer overall, and for example, when dicing a workpiece with metal on the back side, burrs from the metal on the back side generated by dicing may become embedded in the dicing tape. This can make it difficult to pick up the cut semiconductor device. As a result, the quality of the semiconductor device during pickup may deteriorate.

[0025] According to this embodiment, as shown in Figure 6, during dicing, the outer periphery of the workpiece W is fixed by a portion SA1 with strong adhesive force, while the portion of the workpiece W excluding the outer periphery is fixed by a portion WA1 with weak adhesive force. This keeps the approximately triangular semiconductor substrate generated after dicing fixed to the adhesive 20 at the outer periphery of the workpiece W, thereby suppressing chip breakage. Furthermore, in the portion of the workpiece W excluding the outer periphery on which multiple semiconductor devices are formed, it is suppressed that burrs generated on the back surface of the workpiece W become embedded in the dicing tape 1. In this way, according to this embodiment, it is possible to suppress chip breakage while making it easier to pick up the cut semiconductor devices, thereby suppressing a deterioration in the quality of the semiconductor devices.

[0026] 2. Variations Next, a modified semiconductor device will be described. In the following, the differences between the configuration of the modified semiconductor device and the configuration of the semiconductor device according to the embodiment will be primarily described. Configurations equivalent to those of the embodiment will be omitted as appropriate.

[0027] In the dicing tape according to the modified example, it is different from the embodiment in that the release film is provided on the lower surface side of the base material of the dicing tape.

[0028] First, the configuration of the dicing tape according to the modified example will be described with reference to FIGS. 7 and 8. FIG. 7 is a cross-sectional view showing an example of the dicing tape according to the modified example. The cross-sectional view of FIG. 7 is a cross-sectional view in the XZ cross-section. FIG. 8 is a bottom view showing an example of the dicing tape according to the modified example.

[0029] The dicing tape 1A according to the modified example includes a base material 10, an adhesive material 20, and a release film 30A.

[0030] The release film 30A is provided so as to contact the lower surface of the base material 10. The release film 30A has non-adhesive properties. The release film 30A is configured to be peelable from the lower surface of the base material 10. The release film 30A has light-shielding properties with respect to the light used for the curing reaction of the adhesive material 20. The release film 30A has, for example, a ring-shaped structure that is rotationally symmetric about the Z axis. The outer diameter length R3 of the release film 30A is, for example, larger than the length RW of the workpiece W and not more than the length R1 of the base material 10 (RW < R3 ≤ R1). The inner diameter length R4 of the release film 30A is smaller than the length RW of the workpiece W (R4 < RW). The difference between the length R4 and the length RW is, for example, 4 mm or more (4 mm ≤ (RW - R4)). With the above configuration, the adhesive material 20 includes a third portion that does not overlap with the release film 30A in the Z direction and a fourth portion that overlaps with the release film in the Z direction. The third portion includes, for example, an inner portion and an outer portion that are more inner than the fourth portion when viewed from above. Note that the third portion may not include the outer portion that is more outer than the fourth portion.

[0031] Next, a method for manufacturing a semiconductor device using a modified dicing tape 1A will be described with reference to Figures 9, 10, 11, and 12. Figures 9 and 11 are cross-sectional views illustrating a method for manufacturing a semiconductor device using a modified dicing tape. Figures 9 and 11 correspond to the cross-sectional view shown in Figure 7. Figures 10 and 12 are top views illustrating a method for manufacturing a semiconductor device using a modified dicing tape.

[0032] First, as in the embodiment, the dicing tape 1 is attached to the ring frame RF.

[0033] Furthermore, as shown in Figure 9, for example, UV light from a laser or lamp is irradiated from the back side of the dicing tape 1A attached to the ring frame RF to the area where the release film 30A is provided. This causes the curing reaction of the adhesive 20 to proceed. At this time, in the fourth portion of the adhesive 20 that overlaps with the release film 30A in the Z direction, the curing reaction is less likely to proceed because the release film 30A blocks the light. As a result, as shown in Figure 10, after the light irradiation, a portion WA2 with weak adhesive strength and a portion SA2 with strong adhesive strength are formed in the adhesive 20. Portions WA2 and SA2 correspond to the third and fourth portions of the adhesive 20, respectively. In Figure 10, portion SA2 is shown by diagonal lines.

[0034] After the light irradiation, for example, the release film 30A is peeled off from the substrate 10. In the modified example, since the release film 30A is provided on the lower surface of the substrate 10, the release film 30A does not need to be peeled off from the substrate 10 after the light irradiation.

[0035] Then, as shown in Figure 11, a workpiece W with multiple semiconductor devices formed on it is fixed onto the adhesive material 20. At this time, similar to the embodiment, the workpiece W is attached to the adhesive material 20 such that the center of the workpiece W (the center of the semiconductor substrate of the workpiece W) corresponds to the center of the area where the release film 30 has been peeled off. As described above, the length R4 is smaller than the length RW of the workpiece W. As a result, as shown in Figure 12, when viewed from above, the outer periphery of the workpiece W is fixed in contact with the strongly adhesive portion SA2 in a ring shape. In Figure 12, the outer periphery of the workpiece W that is in contact with portion SA2 is shown by diagonal lines. Also, when viewed from above, the part of the workpiece W inside the outer periphery is fixed in contact with portion WA2.

[0036] Furthermore, similar to the embodiment, the workpiece W fixed on the adhesive material 20 as described above is diced by a blade or the like.

[0037] The same effects as those of the embodiment can be achieved through modifications.

[0038] 3. Others While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims and their equivalents. [Explanation of Symbols]

[0039] 1, 1A... Dicing tape, 10... Base material, 20... Adhesive, 30, 30A... Release film, RF... Ring frame.

Claims

1. The dicing tape comprises a base material, an adhesive material provided on the upper surface of the base material and containing a material that can be altered by light irradiation, and a release film provided so as to overlap the portion of the adhesive material when viewed from above, and is attached to a ring frame. By irradiating the substrate with light from below, the adhesiveness of the first portion of the upper surface of the adhesive material that overlaps with the release film when viewed from above is made different from the adhesiveness of the second portion of the upper surface of the adhesive material that does not overlap with the first portion. The center of the workpiece and the center of the area on the dicing tape where the release film is provided are aligned, and the workpiece is attached to the adhesive material. By dicing the workpiece, each of the multiple semiconductor devices is made into a separate piece. Equipped with, A method for manufacturing a semiconductor device.

2. Using a dicing tape in which the circular release film, when viewed from above, is provided on the upper surface of the adhesive, The outer diameter of the release film is less than the outer diameter of the workpiece. A method for manufacturing a semiconductor device according to claim 1.

3. The method further comprises performing the light irradiation and, before attaching the workpiece to the adhesive, peeling off the release film. A method for manufacturing a semiconductor device according to claim 2.

4. The reaction in which the adhesive material deteriorates during the aforementioned light irradiation is inhibited by oxygen. The aforementioned light irradiation is carried out in an atmosphere in which oxygen is present. A method for manufacturing a semiconductor device according to claim 2.

5. The release film, which has a ring-shaped structure when viewed from above, uses a dicing tape provided on the lower surface of the adhesive material. The inner diameter of the release film is less than the outer diameter of the workpiece. A method for manufacturing a semiconductor device according to claim 1.

6. The release film having light-shielding properties with respect to the light in the aforementioned light irradiation is used. A method for manufacturing a semiconductor device according to claim 5.

7. By irradiating the substrate with light from below, the adhesive force in the second portion is made stronger than the adhesive force in the first portion. A method for manufacturing a semiconductor device according to claim 1.

8. A dicing tape used to fix a workpiece during dicing, Substrate and An adhesive material provided on the upper surface of the substrate, which includes a material that can be altered by light irradiation, A release film provided on the lower surface of the substrate, Equipped with, Viewed from above, the release film has a ring-shaped structure. Dicing tape.

9. The release film has light-shielding properties with respect to the light during the light irradiation. The dicing tape according to claim 8.

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