Semiconductor equipment

Abstract

To provide a semiconductor device that is less susceptible to changes in electrical characteristics due to miniaturization. [Solution] An acid comprising a first region and a pair of second regions facing each other across the first region A semiconductor film, a gate insulating film provided on the oxide semiconductor film, and provided on the gate insulating film The first region is c-axis oriented and has a first electrode superimposed on the first region. A non-single-crystal oxide semiconductor region having a crystalline portion, and a pair of second regions are dopants A semiconductor device characterized by being an oxide semiconductor region that includes and has multiple crystalline parts. That is the case.

Claims

1. It has a first transistor, a second transistor, and a third transistor, The first transistor has a first silicon semiconductor, The first silicon semiconductor has a first channel formation region, The second transistor has a second silicon semiconductor, The second silicon semiconductor has a second channel formation region, The third transistor comprises an oxide semiconductor film, a gate insulating film, a gate electrode, and a source electrode or drain electrode. The oxide semiconductor film has a third channel-forming region, a source region, and a drain region. The oxide semiconductor film comprises indium (In), gallium (Ga), and zinc (Zn). A first insulating film is provided, The oxide semiconductor film is provided on the first insulating film, The gate insulating film is provided on the oxide semiconductor film. The gate electrode is provided on the gate insulating film, An interlayer insulating film is provided on the gate electrode, The source electrode and the drain electrode are provided on the interlayer insulating film. The source electrode has a region that contacts the source region of the oxide semiconductor film through a first opening provided in the interlayer insulating film and the gate insulating film. The front drain electrode has a region that contacts the drain region of the oxide semiconductor film through a second opening provided in the interlayer insulating film and the gate insulating film. The source region and the drain region have boron, The boron is added to the source region and the drain region via the gate insulating film. The source electrode or the drain electrode of the third transistor is electrically connected to the gate of the first transistor. A semiconductor device in which the source or drain of the first transistor is electrically connected to the source or drain of the second transistor.

2. It has a first transistor, a second transistor, and a third transistor, The first transistor has a first silicon semiconductor, The first silicon semiconductor has a first channel formation region, The second transistor has a second silicon semiconductor, The second silicon semiconductor has a second channel formation region, The third transistor comprises an oxide semiconductor film, a gate insulating film, a gate electrode, and a source electrode or drain electrode. The oxide semiconductor film has a third channel-forming region, a source region, and a drain region. The oxide semiconductor film comprises indium (In), gallium (Ga), and zinc (Zn). A first insulating film is provided, The oxide semiconductor film is provided on the first insulating film, The gate insulating film is provided on the oxide semiconductor film. The gate electrode is provided on the gate insulating film, An interlayer insulating film is provided on the gate electrode, The source electrode and the drain electrode are provided on the interlayer insulating film. The source electrode has a region that contacts the source region of the oxide semiconductor film through a first opening provided in the interlayer insulating film and the gate insulating film. The front drain electrode has a region that contacts the drain region of the oxide semiconductor film through a second opening provided in the interlayer insulating film and the gate insulating film. The source region and the drain region have boron, The boron is added to the source region and the drain region via the gate insulating film. The source electrode or the drain electrode of the third transistor is electrically connected to the gate of the first transistor. Either the source or drain of the first transistor is electrically connected to either the source or drain of the second transistor. The second transistor has the function of being in the off state when the third transistor is in the ON state. A semiconductor device having the function of turning on the second transistor when the third transistor is in the off state.

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