Semiconductor devices and semiconductor circuits

Abstract

This prevents the anode and cathode pads of the temperature-sensing diode from short-circuiting. [Solution] A semiconductor device is provided comprising: a semiconductor substrate having an upper surface; a temperature sense diode disposed above the upper surface of the semiconductor substrate; an anode pad disposed above the upper surface of the semiconductor substrate and connected to the anode of the temperature sense diode; a cathode pad disposed above the upper surface of the semiconductor substrate and connected to the cathode of the temperature sense diode; a gate pad disposed above the upper surface of the semiconductor substrate; and a gate runner disposed above the upper surface of the semiconductor substrate and connected to the gate pad, wherein all areas between the anode pad and the cathode pad do not overlap with the gate runner.

Description

Technical Field

[0001] The present invention relates to a semiconductor device and a semiconductor circuit.

Background Art

[0002] Patent Document 1 describes a semiconductor device including a temperature sense diode. Patent Document 2 describes a silicon carbide semiconductor device provided with a temperature monitor element for securing a detection current. Patent Document 1: Japanese Unexamined Patent Application Publication No. 2021-2683 Patent Document 2: Japanese Unexamined Patent Application Publication No. 2013-201357

Summary of the Invention

Problems to be Solved by the Invention

[0003] Suppress the short circuit between the anode pad and the cathode pad of the temperature sense diode.

Means for Solving the Problems

[0004] In order to solve the above problems, in a first aspect of the present invention, a semiconductor device including a semiconductor substrate having an upper surface is provided. The semiconductor device may include a temperature sense diode disposed above the upper surface of the semiconductor substrate. Any of the semiconductor devices may include an anode pad disposed above the upper surface of the semiconductor substrate and connected to the anode of the temperature sense diode, and a cathode pad disposed above the upper surface of the semiconductor substrate and connected to the cathode of the temperature sense diode. Any of the semiconductor devices may include a gate pad disposed above the upper surface of the semiconductor substrate and a gate runner disposed above the upper surface of the semiconductor substrate and connected to the gate pad. In any of the semiconductor devices, all regions between the anode pad and the cathode pad may not overlap with the gate runner.

[0005] In any of the semiconductor devices described above, the anode pad and the cathode pad do not need to overlap with the gate runner.

[0006] In any of the above-described semiconductor devices, the gate runner may be made of polysilicon.

[0007] In any of the semiconductor devices described above, the temperature sense diode may be located in the region between the anode pad and the cathode pad.

[0008] In any of the semiconductor devices described above, the gate runner may surround the temperature sense diode, the anode pad, and the cathode pad.

[0009] Any of the above semiconductor devices may further include a metal electrode disposed above the upper surface of the semiconductor substrate. In any of the above semiconductor devices, the metal electrode may surround the anode pad and the cathode pad. In any of the above semiconductor devices, the metal electrode may have a first portion that overlaps with the gate runner. In any of the above semiconductor devices, the metal electrode may have a second portion that extends inward beyond the gate runner.

[0010] In any of the above semiconductor devices, the inner end of the gate runner in a top view may entirely overlap with the metal electrode.

[0011] In any of the above semiconductor devices, the metal electrode may be the source potential electrode.

[0012] In any of the semiconductor devices described above, the metal electrode and the cathode pad may be at the same potential.

[0013] In any of the above semiconductor devices, the semiconductor substrate may have an active region on which a semiconductor element is formed. In any of the above semiconductor devices, the anode pad and the cathode pad may be arranged along a first direction. In any of the above semiconductor devices, the anode pad and the cathode pad and the active region may face each other in a second direction perpendicular to the first direction in a top view. In any of the above semiconductor devices, the gate runner may be provided between the anode pad and the cathode pad and the active region.

[0014] Any of the above semiconductor devices may further include a field oxide film provided on the upper surface of the semiconductor substrate. In any of the above semiconductor devices, the temperature sense diode, the anode pad, and the cathode pad may be provided above the field oxide film. In any of the above semiconductor devices, the edge of the field oxide film may be located below the gate runner provided between the anode pad and the cathode pad and the active portion in the second direction.

[0015] In any of the above semiconductor devices, the semiconductor substrate may have an active region on which a semiconductor element is formed. In any of the above semiconductor devices, the gate runner may have an outer peripheral runner portion surrounding the active region and a temperature-sensing runner portion surrounding the anode pad and the cathode pad. In any of the above semiconductor devices, the outer peripheral runner portion may include a laminated runner in which a metal runner and a poly runner are laminated. In any of the above semiconductor devices, at least a portion of the temperature-sensing runner portion may be a non-laminated runner that includes the poly runner but does not include the metal runner.

[0016] Any of the above semiconductor devices may further include a metal electrode disposed above the upper surface of the semiconductor substrate. In any of the above semiconductor devices, the metal electrode may have a first portion that overlaps with the non-stacked runner. In any of the above semiconductor devices, the metal electrode may have a second portion that extends inward beyond the non-stacked runner. In any of the above semiconductor devices, the metal electrode may be a source potential electrode.

[0017] In any of the above semiconductor devices, the temperature sense diode may have a main diode with its anode connected to the anode pad. In any of the above semiconductor devices, the temperature sense diode may have a protective diode with its anode connected to the cathode pad. In any of the above semiconductor devices, the anode pad and the cathode pad may be arranged along a first direction. In any of the above semiconductor devices, in a top view, in a second direction perpendicular to the first direction, the length of the main diode may be greater than the length of the protective diode.

[0018] In any of the above semiconductor devices, the semiconductor substrate may be a silicon carbide semiconductor substrate. In any of the above semiconductor devices, an insulating film may be provided between the upper surface of the semiconductor substrate and the metal electrode. In any of the above semiconductor devices, contact holes may be formed in the insulating film. In any of the above semiconductor devices, the second portion may be connected to the upper surface of the semiconductor substrate via the contact holes. In any of the above semiconductor devices, the contact holes may surround the anode pad and the cathode pad. In any of the above semiconductor devices, the semiconductor substrate may have a drift region of a first conductivity type and a well region of a second conductivity type provided between the drift region and the upper surface of the semiconductor substrate. In any of the above semiconductor devices, the second portion may be connected to the well region via the contact holes. In any of the above semiconductor devices, the gate runner may not be provided in the area surrounded by the contact holes. In any of the above semiconductor devices, the contact holes may be surrounded by the gate runners. In any of the above semiconductor devices, the semiconductor substrate may be a silicon semiconductor substrate or a gallium nitride semiconductor substrate. In any of the above semiconductor devices, the temperature sense diode may be located in the region between the anode pad and the cathode pad. In any of the above semiconductor devices, the distance between the anode pad and the cathode pad may be 250 μm or less. In any of the above semiconductor devices, the insulating film may have a field oxide film provided on the upper surface of the semiconductor substrate and an interlayer insulating film provided above the field oxide film and the gate runner. In a second embodiment of the present invention, a semiconductor circuit is provided comprising a plurality of the above semiconductor devices connected in parallel. In the above semiconductor circuit, at least one of the plurality of semiconductor devices may have the temperature sense diode, and at least one may not have the temperature sense diode.

[0019] The above summary of the invention does not enumerate all the necessary features of the present invention. Also, sub-combinations of these groups of features can also be inventions.

Brief Description of the Drawings

[0020] [Figure 1] It is a top view showing an example of a semiconductor device 100 according to an embodiment of the present invention. [Figure 2] It is an enlarged view of region A in FIG. 1. [Figure 3] It is an enlarged view of region A of a semiconductor device in a comparative example. [Figure 4] It is a cross-sectional view showing an example of line E-E' in FIG. 3. [Figure 5] It is a diagram showing the arrangement of electrodes in region A. [Figure 6] It is a cross-sectional view showing an example of line A-A' in FIG. 5. [Figure 7] It is a cross-sectional view showing an example of line B-B' in FIG. 5. [Figure 8] It is a cross-sectional view showing an example of line C-C' in FIG. 5. [Figure 9] It is a cross-sectional view showing an example of line D-D' in FIG. 5. [Figure 10] It is a diagram showing the arrangement of electrodes in region A of a semiconductor device according to a comparative example. [Figure 11] It is a cross-sectional view showing an example of line A-A' in FIG. 10. [Figure 12] It is a cross-sectional view showing an example of line B-B' in FIG. 1o. [Figure 13] It is a cross-sectional view showing an example of line C-C' in FIG. 10. [Figure 14] It is an enlarged view of region A in FIG. 1. [Figure 15] It is a diagram showing the arrangement of electrodes in region A. [Figure 16A] It is a cross-sectional view showing an example of line A-A' in FIG. 15. [Figure 16B] It is a cross-sectional view showing another example of line A-A' in FIG. 15. [Figure 17A]Figure 15 is a cross-sectional view showing an example of the B-B' line. [Figure 17B] Figure 15 is a cross-sectional view showing another example of the B-B' line. [Figure 18A] Figure 15 is a cross-sectional view showing an example of the C-C' line. [Figure 18B] Figure 15 is a cross-sectional view showing another example of the C-C' line. [Figure 19A] Figure 15 is a cross-sectional view showing an example of the D-D' line. [Figure 19B] Figure 15 is a cross-sectional view showing an example of the D-D' line. [Figure 20] This figure shows a cross-section of semiconductor device 100 from C to C' in the reference example. [Figure 21] This is a circuit diagram of a semiconductor circuit 500 comprising the semiconductor device 100 of the embodiment. [Modes for carrying out the invention]

[0021] The present invention will be described below through embodiments, but these embodiments are not intended to limit the scope of the claims. Furthermore, not all combinations of features described in the embodiments are necessarily essential to the solution of the invention.

[0022] In this specification, one side of a semiconductor substrate parallel to its depth direction is referred to as "top," and the other side as "bottom." Of the two main surfaces of a substrate, layer, or other component, one surface is referred to as the top surface, and the other surface as the bottom surface. The directions of "top" and "bottom" are not limited to the direction of gravity or the direction in which the semiconductor device is mounted.

[0023] In this specification, technical matters may be described using the Cartesian coordinate axes, the X, Y, and Z axes. The Cartesian coordinate axes merely specify the relative positions of components and do not limit any particular direction. For example, the Z axis does not limit the direction to height relative to the ground. Note that the +Z axis direction and the -Z axis direction are opposite directions. When the sign is not specified and only the Z axis direction is written, it means the direction parallel to the +Z and -Z axes.

[0024] In this specification, the orthogonal axes parallel to the top and bottom surfaces of the semiconductor substrate are defined as the X and Y axes. The axis perpendicular to the top and bottom surfaces of the semiconductor substrate is defined as the Z axis. In this specification, the direction of the Z axis may be referred to as the depth direction. In this specification, the direction parallel to the top and bottom surfaces of the semiconductor substrate, including the X and Y axes, may be referred to as the horizontal direction.

[0025] The region from the center of the semiconductor substrate in the depth direction to the top surface of the semiconductor substrate is sometimes referred to as the top surface. Similarly, the region from the center of the semiconductor substrate in the depth direction to the bottom surface of the semiconductor substrate is sometimes referred to as the bottom surface.

[0026] In this specification, when we refer to "identical" or "equal," we may include cases where there are errors due to manufacturing variations, etc. Such errors are, for example, within 10%. Similarly, when we refer to "parallel" or "perpendicular," we may include errors of, for example, within 5°.

[0027] In this specification, the conductivity type of a doped region containing impurities is described as either p-type or n-type. In this specification, impurities may specifically refer to either n-type donors or p-type acceptors, and may be referred to as dopants. In this specification, doping means introducing donors or acceptors into a semiconductor substrate to make it a semiconductor exhibiting either an n-type conductivity or a p-type conductivity.

[0028] In this specification, when p+ type or n+ type is mentioned, it means a higher doping concentration than p type or n type, and when p- type or n- type is mentioned, it means a lower doping concentration than p type or n type. Furthermore, when p++ type or n++ type is mentioned in this specification, it means a higher doping concentration than p+ type or n+ type. Unless otherwise specified, the units used in this specification are the SI units. Although units of length may be expressed in cm, calculations may be performed after converting to meters (m).

[0029] Figure 1 is a top view showing an example of a semiconductor device 100 according to one embodiment of the present invention. In Figure 1, the positions of each component projected onto the upper surface of the semiconductor substrate 10 are shown. In Figure 1, only some components of the semiconductor device 100 are shown, and some components are omitted.

[0030] The semiconductor device 100 includes a semiconductor substrate 10. The semiconductor substrate 10 is a substrate formed of a semiconductor material. As an example, the semiconductor substrate 10 is a silicon carbide semiconductor substrate, a silicon substrate, or a wide-bandgap semiconductor substrate such as gallium nitride. In this specification, the outer edge of the semiconductor substrate 10 in a top view is referred to as the outer edge 140. A top view refers to the view of the semiconductor substrate 10 from the top side parallel to the Z-axis. In addition, one of the outer edges 140 of the semiconductor substrate 10 in a top view is referred to as the first edge 142. In a top view, the direction parallel to the first edge 142 is defined as the X-axis direction, and the direction perpendicular to the first edge 142 is defined as the Y-axis direction.

[0031] An active area 120 is provided on the semiconductor substrate 10. The active area 120 is a region in which the main current flows in the depth direction between the upper and lower surfaces of the semiconductor substrate 10 when the semiconductor device 100 is operating. A source electrode 52 is provided above the active area 120. The region below the source electrode 52 may be defined as the active area 120. Alternatively, the region below the source electrode 52 in which the source electrode 52 and the semiconductor substrate 10 are in periodic contact may be defined as the active area 120. The ends in the X-axis direction of the region in contact with the source electrode 52 and the semiconductor substrate 10 may be defined as the ends in the X-axis direction of the active area 120. The ends in the Y-axis direction of the region in contact with the source electrode 52 and the semiconductor substrate 10 may be defined as the ends in the Y-axis direction of the active area 120. The active area 120 may be a rectangular region defined by the above ends in the X-axis direction and the above ends in the Y-axis direction.

[0032] The active portion 120 may be a region on which a semiconductor element is formed. The active portion 120 is provided with at least one of a transistor portion including a transistor element such as a MOSFET, or a diode portion including a diode element such as a freewheeling diode (FWD). In this example, the active portion 120 is provided with a MOSFET as the transistor portion, but other transistor elements such as IGBTs may also be provided.

[0033] The semiconductor device 100 may have one or more pads on the upper surface of the semiconductor substrate 10. In this example, the semiconductor device 100 includes an anode pad 112, a cathode pad 114, a gate pad 116, a built-in resistance measurement pad 117, and an auxiliary source pad 118. Each pad is located on the upper surface of the semiconductor substrate 10. An active section 120 on which a semiconductor element is provided may be provided below each pad.

[0034] The semiconductor device 100 includes a temperature sense diode 115. The temperature sense diode 115 is positioned above the upper surface of the semiconductor substrate 10. In this example, the temperature sense diode 115 is located outside the active portion 120. The temperature sense diode 115 is located in the region between the anode pad 112 and the cathode pad 114. For example, if the semiconductor substrate 10 is a silicon carbide semiconductor substrate and the size of the semiconductor device 100 is small, the temperature sense diode 115 may be formed between the anode pad 112 and the cathode pad 114 rather than in the center of the semiconductor substrate 10. This allows for a larger area of ​​the active portion 120. In this example, the temperature sense diode 115 is a pn junction diode.

[0035] The anode pad 112 is positioned above the upper surface of the semiconductor substrate 10 and is connected to the anode of the temperature sense diode 115. The cathode pad 114 is positioned above the upper surface of the semiconductor substrate 10 and is connected to the cathode of the temperature sense diode 115. The temperature of the semiconductor device 100 is measured by passing a predetermined current between the anode pad 112 and the cathode pad 114 and detecting the forward voltage of the temperature sense diode 115.

[0036] In this specification, the direction in which the anode pad 112 and cathode pad 114 are positioned is referred to as the first direction. That is, the anode pad 112 and cathode pad 114 are positioned side by side along the first direction. Furthermore, the direction perpendicular to the first direction in a top view is referred to as the second direction. In this example, the first direction is the X-axis direction, and the second direction is the Y-axis direction. In this example, the anode pad 112 and cathode pad 114 face the active part 120 in the second direction. At least a portion of the anode pad 112 and cathode pad 114 may face the active part 120 in the second direction.

[0037] A gate voltage is applied to the gate pad 116. In this example, the gate pad 116 is connected to the gate conductive part of the transistor section of the active section 120 via a gate runner, which will be described later.

[0038] The semiconductor device 100 may include a current sensing unit (not shown). The current sensing unit has the same structure as the transistor unit, but has a smaller area in a top view (corresponding to the channel area) than the transistor unit. A predetermined current flows through the transistor unit when the semiconductor device 100 is operating, and a current corresponding to the current value of the transistor unit flows through the current sensing unit.

[0039] The semiconductor device 100 includes a built-in resistance measuring pad 117. The built-in resistance measuring pad 117 is used to measure the resistance value of a built-in gate resistor (not shown) located between the gate pad 116 and the built-in resistance measuring pad 117 before product shipment. The built-in resistance measuring pad 117 is located near the gate pad 116 on the path of the metal runner 131 (gate runner 130) and is directly connected to the metal runner 131. However, the semiconductor device 100 does not have to include the built-in resistance measuring pad 117. The semiconductor device 100 includes an auxiliary source pad 118 connected to a source electrode 52. The source electrode 52 and the auxiliary source pad 118 may be a single electrode provided in series. An active section 120 with a semiconductor element is provided below the auxiliary source pad 118. However, the semiconductor device 100 does not have to include the auxiliary source pad 118.

[0040] Each pad is made of a metal material such as aluminum. Multiple pads are arranged in a predetermined direction between the active portion 120 and the first edge 142 on the upper surface of the semiconductor substrate 10. The number and type of pads provided on the semiconductor substrate 10 are not limited to the example shown in Figure 1.

[0041] A protective film 80 made of polyimide or the like is provided above the upper surface of the semiconductor substrate 10. The protective film 80 may cover a portion of the source electrode 52 and each pad. The protective film 80 has openings that expose the source electrode 52 and each pad to the upper side. The source electrode 52 and each pad are wire-bonded at the openings and connected to an external circuit. In Figure 1, the protective film 80 is hatched.

[0042] The edge termination structure 90 is provided on the upper surface of the semiconductor substrate 10, between the active portion 120 and each pad, and the outer peripheral edge 140 of the semiconductor substrate 10. The edge termination structure 90 may be arranged in a ring shape on the upper surface of the semiconductor substrate 10 so as to surround the active portion 120 and each pad. In this example, the edge termination structure 90 is arranged along the outer peripheral edge 140 of the semiconductor substrate 10. The edge termination structure 90 mitigates electric field concentration on the upper surface side of the semiconductor substrate 10. The edge termination structure 90 may have, for example, a guard ring, a field plate, a resurf, or a structure combining these.

[0043] Figure 2 is an enlarged view of region A in Figure 1. Region A is the area surrounding the anode pad 112 and cathode pad 114. However, in Figure 2, the interlayer insulating film 38, source electrode 52, and metal electrode 62 (described later) are not shown.

[0044] In this example, the temperature sense diode 115 is located in the region between the anode pad 112 and the cathode pad 114. The temperature sense diode 115 in this example has a main diode 155 and a protection diode 125. The anode of the main diode 155 is connected to the anode pad 112, and the cathode of the main diode 155 is connected to the cathode pad 114. The forward voltage of the temperature sense diode 115 may be the forward voltage of the main diode 155.

[0045] The protective diode 125 has its pn junction oriented in the opposite direction to that of the temperature sense diode 115. That is, the cathode of the protective diode 125 is connected to the anode pad 112, and the anode of the protective diode 125 is connected to the cathode pad 114. By providing the protective diode 125, the main diode 155 can be protected even if reverse voltages are applied to the anode pad 112 and the cathode pad 114.

[0046] Both the main diode 155 and the protective diode 125 may be placed between the anode pad 112 and the cathode pad 114. However, the temperature sense diode 115 does not need to have a protective diode 125.

[0047] A connecting metal 122 may be provided above the main diode 155. The connecting metal 122 connects the multi-stage pn junctions of the main diode 155 in series. A connecting metal 122 may also be provided above the protection diode 125.

[0048] In the second direction, the length W1 of the main diode 155 may be greater than the length W2 of the protective diode 125. This allows the area of ​​the anode pad 112, cathode pad 114, and temperature sense diode 115 to be reduced even when the protective diode 125 is provided. The length W1 may be 1.5 times or more the length W2, or 2 times or more.

[0049] In the second direction, an anode pad 112 or cathode pad 114 does not need to be provided between the main diode 155 or protection diode 125 and the gate runner 130. This allows the area of ​​the main diode 155 and protection diode 125 to be secured even if the area of ​​the anode pad 112 and cathode pad 114 is reduced compared to the comparative example described later.

[0050] A gate runner 130 is positioned above the upper surface of the semiconductor substrate 10. The gate runner 130 is connected to the gate pad 116. The gate runner 130 is provided along the edge termination structure 90, surrounding the active portion 120 and each pad. In this example, the gate runner 130 is also provided between the anode pad 112 and cathode pad 114 and the active portion 120. That is, in a top view, the gate runner 130 in this example surrounds the temperature sense diode 115, the anode pad 112 and the cathode pad 114.

[0051] The gate runner 130 has a poly runner 133 and a metal runner 131. The poly runner 133 is a polysilicon gate runner 130, and the metal runner 131 is a metal gate runner 130.

[0052] The poly runner 133 is positioned below the gate pad 116, surrounding the anode pad 112, cathode pad 114, and active portion 120. The metal runner 131 has a portion that is positioned along the edge termination structure 90 of the semiconductor substrate 10 and a portion that is positioned surrounding the gate pad 116. In this example, the metal runner 131 is not provided between the anode pad 112 and cathode pad 114 and the active portion 120, but the poly runner 133 is provided. In Figure 2, the poly runner 133 is given a coarse hatching pattern.

[0053] The metal runner 131 is formed above the poly runner 133. An interlayer insulating film 38 is formed between the metal runner 131 and the poly runner 133. Contact holes 54 are formed in the interlayer insulating film 38, and the metal runner 131 and the poly runner 133 are connected through the contact holes 54. In Figure 2, the contact holes 54 are shown with dark hatching. In a direction perpendicular to the stretching direction of the gate runner 130, the width of the metal runner 131 may be smaller than that of the poly runner 133.

[0054] In this example, the entire region between the anode pad 112 and the cathode pad 114 does not overlap with the gate runner 130. The region between the anode pad 112 and the cathode pad 114 may be the region sandwiched between the anode pad 112 and the cathode pad 114, and may be the region that overlaps with any straight line connecting the anode pad 112 and the cathode pad 114. This makes it possible to suppress short circuits between the anode pad 112 and the cathode pad 114, as will be described later. In this example, the entire region between the anode pad 112 and the cathode pad 114 does not overlap with the poly runner 133. Furthermore, this region does not overlap with the metal runner 131.

[0055] A connecting metal 122 may be provided in the region between the anode pad 112 and the cathode pad 114. The entire region between the anode pad 112 and the connecting metal 122 does not need to overlap with the gate runner 130. Similarly, the entire region between the cathode pad 114 and the connecting metal 122 does not need to overlap with the gate runner 130. Furthermore, the entire region between the connecting metals 122 themselves does not need to overlap with the gate runner 130. The entire region of the connecting metal 122 does not need to overlap with the poly runner 133.

[0056] The anode pad 112 and cathode pad 114 do not need to overlap with the gate runner 130. In this example, the anode pad 112 and cathode pad 114 are surrounded by the gate runner 130 and are not connected to the gate runner 130. The connecting metal 122 also does not need to overlap with the gate runner 130.

[0057] The distance between the anode pad 112 and the cathode pad 114 may be 50 μm or less, 40 μm or less, or 30 μm or less. The distance may be 5 μm or more. In this example, the distance is 15 μm or more and 20 μm or less. The distance may be the distance between the anode pad 112 and the cathode pad 114 at the position closest to the gate runner 130. The distance may also be the shortest distance between the anode pad 112 and the cathode pad 114. If a connecting metal 122 is provided between the anode pad 112 and the cathode pad 114, the description of the distance can be applied to the distance between the anode pad 112 and the connecting metal 122, the distance between the cathode pad 114 and the connecting metal 122, and the distance between the connecting metals 122 themselves.

[0058] Figure 3 is an enlarged view of region A of the semiconductor device in the comparative example. In the semiconductor device of the comparative example, the area between the anode pad 112 and the cathode pad 114, specifically the area around the end in the second direction, overlaps with the gate runner 130. Also, a portion of the anode pad 112 and cathode pad 114 overlaps with the gate runner 130. Furthermore, in the second direction, a cathode pad 114 is provided between the main diode 155 or the protection diode 125 and the gate runner 130, and this cathode pad 114 also overlaps with the gate runner 130. In this example, the gate runner 130 that overlaps with the anode pad 112 or cathode pad 114 is a poly runner 133.

[0059] Figure 4 is a cross-sectional view showing an example of the E-E' line in Figure 3. Figure 4 is a YZ cross-section that crosses the end of the polyrunner 133 in the second direction. Figure 4 shows only the configuration above the field oxide film 36 provided above the upper surface of the semiconductor substrate 10.

[0060] The anode pad 112 and cathode pad 114 may be formed by separating a single pad by metal etching. The E-E' section is a cross-section passing through the region between the anode pad 112 and cathode pad 114 separated by metal etching.

[0061] The gate runner 130 is provided above the field oxide film 36. In Figure 4, the poly runner 133 is provided above the field oxide film 36. An interlayer insulating film 38 is formed above the field oxide film 36 and the poly runner 133. This insulates the poly runner 133 from the anode pad 112 and the cathode pad 114. The interlayer insulating film 38 is, as an example, boron-doped silicate glass (BPSG: Boron Phosphorus Silicate Glass or BSG: Boron Silicate Glass).

[0062] If the coverage of the interlayer insulating film 38 is poor for any reason, a portion of the gate runner 130 may be exposed. In particular, the coverage of the stepped portion at the end of the gate runner 130 in the direction perpendicular to the stretching direction may be poor. Also, when the interlayer insulating film 38 is PSG, the coverage is often worse than that of BPSG. In Figure 4, the coverage of the stepped portion at the end of the poly runner 133 on the negative side of the second direction is poor, and a portion of the poly runner 133 is exposed.

[0063] When the pads are formed in this state and separated into the anode pad 112 and cathode pad 114 by metal etching, some residue 58 that could not be removed by metal etching may remain due to the high adhesion between the pads and the poly runner 133. If residue 58 remains, the anode pad 112 and cathode pad 114 may become connected, potentially causing a short circuit. The residue 58 may be the aluminum alloy that is the material of the pads, or it may be the barrier metal if a barrier metal is formed under the pads.

[0064] In the semiconductor device 100 of the embodiment shown in Figure 2, all areas between the anode pad 112 and the cathode pad 114 do not overlap with the gate runner 130, so there is no concern about the generation of residue 58 even if the coverage of the interlayer insulating film 38 is poor. Therefore, a short circuit between the anode pad 112 and the cathode pad 114 can be prevented.

[0065] Figure 5 shows the arrangement of electrodes in region A. In addition to Figure 2, Figure 5 shows the arrangement of the interlayer insulating film 38, source electrode 52, and metal electrode 62. The arrangement of the source electrode 52 and metal electrode 62 is shown with hatching. The interlayer insulating film 38 is shown in the portion that is exposed in a top view. However, the temperature sense diode 115 is omitted in Figure 5. Also, the hatching of the poly runner 133 is applied only to the ends. However, polysilicon may also be formed below the gate pad 116. The source electrode 52 is provided from above the active portion 120 to a position that overlaps with the gate runner 130 in the second direction.

[0066] The semiconductor device 100 may further include a metal electrode 62. The metal electrode 62 is positioned above the upper surface of the semiconductor substrate 10. In this example, the metal electrode 62 surrounds the anode pad 112 and the cathode pad 114. However, in this example, the metal electrode 62 is not connected to the anode pad 112 and the cathode pad 114.

[0067] The metal electrode 62 may be the source potential electrode. In this example, the metal electrode 62 is part of the source electrode 52. In this example, the boundary between the metal electrode 62 and the source electrode 52 is indicated by a dashed line above the gate runner 130. For the sake of explanation, the source electrode 52 and the metal electrode 62 are described separately in this specification, but they may be a single electrode provided continuously.

[0068] The metal electrode 62 in this example has a first portion 71 and a second portion 72. The first portion 71 is the portion that overlaps with the gate runner 130. The first portion 71 in this example is the portion of the metal electrode 62 that overlaps with the poly runner 133. In this example, the width of the poly runner 133 is greater than the width of the metal runner 131.

[0069] The second part 72 is the portion that extends inward beyond the gate runner 130. In this example, the second part 72 is the portion located inward beyond the poly runner 133. In this specification, "inward" may refer to the side on which the anode pad 112 or cathode pad 114 is provided. In other words, the second part 72 is the portion located between the poly runner 133 and the anode pad 112 or cathode pad 114.

[0070] If the interlayer insulating film 38 is exposed upwards, it will absorb moisture. By providing the metal electrode 62, the exposure of the interlayer insulating film 38 can be suppressed. The inner end of the gate runner 130 in a top view may completely overlap with the metal electrode 62.

[0071] The distance between the metal electrode 62 and the anode pad 112 or cathode pad 114 may be 50 μm or less, 40 μm or less, or 30 μm or less. This distance may be 5 μm or more.

[0072] In this example, the case where the metal electrode 62 and the source electrode 52 are at the same potential was described, but the metal electrode 62 and the cathode pad 114 may be at the same potential. In this case, the metal electrode 62 may be separated from the source electrode 52. The metal electrode 62 may be connected to the cathode pad 114. The metal electrode 62 does not have to be potentialally floating. However, the semiconductor device 100 does not have to be equipped with the metal electrode 62. Note that if the metal electrode 62 and the cathode pad 114 are at the same potential, the metal electrode 62 and the source electrode 52 may be connected.

[0073] The gate runner 130 has an outer perimeter runner portion and a temperature-sensing runner portion. This is a distinction made by the arrangement of the gate runner 130 in a top view. The outer perimeter runner portion is located between the active portion 120 and the edge of the semiconductor substrate 10. The outer perimeter runner portion may surround the active portion 120. In addition to the active portion 120, the outer perimeter runner portion may also surround each pad. In region A, the outer perimeter runner portion may be the portion of the gate runner 130 that is arranged along the edge termination structure portion 90. Furthermore, the gate runner 130 (poly runner 133) provided between the anode pad 112 and cathode pad 114 and the active portion 120 in the second direction may also be included in the outer perimeter runner portion, and the gate runner 130 arranged along the gate pad 116 may also be included in the outer perimeter runner portion.

[0074] The temperature sense runner surrounds the anode pad 112 and the cathode pad 114. The temperature sense runner may be the gate runner 130 that surrounds the anode pad 112 and the cathode pad 114 and is closest to them. The temperature sense runner may also surround the temperature sense diode 115.

[0075] The outer periphery runner and the temperature sense runner may have overlapping portions. In Figure 5, a portion of the gate runner 130 arranged along the edge termination structure 90 is both the outer periphery runner and the temperature sense runner. In addition, the gate runner 130 (poly runner 133) provided between the anode pad 112 and cathode pad 114 and the active portion 120 in the second direction is also both the outer periphery runner and the temperature sense runner.

[0076] The outer runner portion may include a laminated runner in which a metal runner 131 and a poly runner 133 are laminated. At least a part of the outer runner portion may be a laminated runner, or the entire portion may be a laminated runner. In this example, the portion of the gate runner 130 arranged along the edge termination structure 90 and the portion arranged along the gate pad 116 are laminated runners. In addition, the poly runner 133 facing the laminated portion in the width direction perpendicular to the extension direction of the metal runner 131 may also be included as a laminated runner. In other words, the portion of the gate runner in the width direction perpendicular to the extension direction that does not include the metal runner 131 may be a non-laminated runner.

[0077] At least a portion of the temperature-sensing runner may be a non-laminated runner that includes a poly runner 133 but does not include a metal runner 131. In this example, the gate runner 130 provided between the anode pad 112 and cathode pad 114 and the active portion 120 in the second direction is a non-laminated runner. This makes it easier for the metal electrode 62 to surround the anode pad 112 and cathode pad 114. The first portion 71 of the metal electrode 62 may overlap with the non-laminated runner. The second portion 72 of the metal electrode may extend further inward than the non-laminated runner.

[0078] In this example, the rest of the temperature sense runner section is a multilayer runner. In other words, the temperature sense diode 115, anode pad 112, and cathode pad 114 are surrounded by the poly runner 133 and not by the metal runner 131. On the other hand, the active section 120 is surrounded by both the poly runner 133 and the metal runner 131.

[0079] Figure 6 is a cross-sectional view showing an example of the line A-A' in Figure 5. The A-A' section is a YZ section passing through the main diode 155, cathode pad 114, and protection diode 125. However, the lower side of the semiconductor substrate 10 is omitted in Figure 6. In the A-A' section, the semiconductor device 100 comprises a semiconductor substrate 10, a field oxide film 36, a main diode 155, a protection diode 125, a poly runner 133, a metal runner 131, an interlayer insulating film 38, a cathode pad 114, a metal electrode 62, and a protective film 80.

[0080] The semiconductor substrate 10 in this example has an n-type drift region 18 and a p-type well region 17 provided between the drift region 18 and the upper surface 21. However, an n-type region may be provided in the portion of the semiconductor substrate 10 that is in contact with the upper surface 21. The thickness of the semiconductor substrate 10 may be 50 μm or more and 500 μm or less, and as an example, it is 98 μm.

[0081] The field oxide film 36 is provided on the upper surface 21 of the semiconductor substrate 10. The main diode 155, protective diode 125, cathode pad 114, and poly runner 133 are provided above the field oxide film 36 and are insulated from the semiconductor substrate 10. The anode pad 112 is also provided above the field oxide film 36 in other cross-sections. The thickness of the field oxide film 36 may be between 0.1 μm and 2.0 μm, and is 1.1 μm as an example.

[0082] The interlayer insulating film 38 is provided above the upper surface 21 of the semiconductor substrate 10. In this example, the interlayer insulating film 38 is provided above the field oxide film 36, the poly runner 133, the main diode 155, and the protective diode 125. The thickness of the interlayer insulating film 38 is, for example, 0.65 μm. The thickness of the poly runner 133 may be between 0.3 μm and 1.3 μm, and for example, 0.8 μm.

[0083] A metal electrode 62, a cathode pad 114, and a metal runner 131 are provided above the interlayer insulating film 38. In the second direction, the metal electrode 62 extends beyond the poly runner 133 to the vicinity of the main diode 155 and the protective diode 125. The thickness of the metal electrode 62, cathode pad 114, and metal runner 131 may be between 3 μm and 7 μm, and is 5.5 μm as an example. A protective film 80 is provided above the interlayer insulating film 38, metal electrode 62, cathode pad 114, and metal runner 131.

[0084] Figure 7 is a cross-sectional view showing an example of the B-B' line in Figure 5. The B-B' section is a YZ section passing through the main diode 155 and the protection diode 125. However, the lower side of the semiconductor substrate 10 is omitted in Figure 7. The B-B' section differs from the A-A' section in that there is no cathode pad 114 between the main diode 155 and the protection diode 125. Other parts are the same as the A-A' section.

[0085] Figure 8 is a cross-sectional view showing an example of the C-C' line in Figure 5. The C-C' section is the XZ section passing through the main diode 155. However, the lower side of the semiconductor substrate 10 is omitted in Figure 8. The configuration below the field oxide film 36 is the same as in Figure 6, so its explanation is omitted.

[0086] The anode pad 112, cathode pad 114, and connecting metal 122 are connected to the main diode 155 via contact holes provided in the interlayer insulating film 38. In this example, the main diode 155 has three pn junctions between the anode pad 112 and the cathode pad 114. The connecting metal 122 connects adjacent pn junctions in series.

[0087] In this example, the metal electrode 62 is provided in the first direction, extending beyond the poly runner 133 to the vicinity of the anode pad 112 and cathode pad 114. However, the metal electrode 62 in this example is not connected to the anode pad 112 and cathode pad 114.

[0088] Figure 9 is a cross-sectional view showing an example of the D-D' line in Figure 5. The D-D' section is a YZ section passing through the polyrunner 133 provided between the anode pad 112 and cathode pad 114 and the active portion 120. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 9.

[0089] In the second direction, the edge of the field oxide film 36 may be located below the gate runner 130 provided between the anode pad 112 and cathode pad 114 and the active portion 120. The gate runner 130 may be a non-laminated runner. In this example, the edge of the field oxide film 36 is located below the poly runner 133 provided between the anode pad 112 and cathode pad 114 and the active portion 120 in the second direction. In other words, in the second direction, the edge of the field oxide film 36 is covered by the poly runner 133. This makes it possible to make the step at the edge of the field oxide film 36 gentler.

[0090] If a gate trench is provided in the active section 120, the extension direction of the gate trench may be the first direction. That is, the gate runner 130 provided between the anode pad 112 and cathode pad 114 and the active section 120 does not need to be connected to the gate trench of the active section.

[0091] In Figure 9, the boundary between the source electrode 52 and the metal electrode 62 is shown by a dashed line. The boundary between the first part 71 and the second part 72 of the metal electrode 62 is shown by a dotted line. However, as mentioned above, these boundaries may be arbitrary.

[0092] Figure 10 shows the arrangement of electrodes in region A of the semiconductor device according to the comparative example. In Figure 10, in addition to Figure 3, the arrangement of the source electrode 52 is shown with hatching. However, the temperature sense diode 115 is omitted in Figure 10. Also, hatching of the poly runner 133 is applied only to the ends.

[0093] In this example, the source electrode 52 is provided in the second direction up to the middle of the polyrunner 133 between the active portion 120 and the anode pad 112 and cathode pad 114. The semiconductor device in this example does not have a metal electrode 62 surrounding the anode pad 112 and cathode pad 114.

[0094] Figure 11 is a cross-sectional view showing an example of the A-A' line in Figure 10. The A-A' section is a YZ section passing through the main diode 155, cathode pad 114, and protection diode 125. However, the lower side of the semiconductor substrate 10 is omitted in Figure 11.

[0095] In this example, a cathode pad 114 is provided above the end of the poly runner 133 in the second direction. A source electrode 52, separate from the cathode pad 114, is also provided above the poly runner 133. Other parts are the same as the A-A' section shown in Figure 6.

[0096] Figure 12 is a cross-sectional view showing an example of the B-B' line in Figure 10. The B-B' section is a YZ section passing through the main diode 155 and the protection diode 125. However, the lower side of the semiconductor substrate 10 is omitted in Figure 12.

[0097] The semiconductor device in this example does not have a metal electrode 62. A source electrode 52 is provided above the poly runner 133 in this example. Other parts are the same as the B-B' section shown in Figure 7.

[0098] Figure 13 is a cross-sectional view showing an example of the C-C' line in Figure 10. The C-C' section is the XZ section passing through the main diode 155. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 13.

[0099] In this example, an anode pad 112 or cathode pad 114 is provided above the end of the polyrunner 133 in the first direction. Furthermore, the semiconductor device in this example does not have a metal electrode 62. Other parts are the same as the B-B' section shown in Figure 7.

[0100] Figure 14 is an enlarged view of region A in Figure 1. Region A is the area surrounding the anode pad 112 and cathode pad 114. However, as with Figure 2, the interlayer insulating film 38, source electrode 52, and metal electrode 62 are not shown in Figure 14. The same configuration as in Figure 2 will not be explained.

[0101] In the semiconductor device 100 of this example, contact holes 56 are formed in the insulating film. The insulating film may be a field oxide film 36 as shown in Figure 6, etc., an interlayer insulating film 38, or both the field oxide film 36 and the interlayer insulating film 38. The metal electrode 62 is connected to the upper surface 21 of the semiconductor substrate 10 via the contact holes 56. In Figure 14, the locations where the contact holes 56 are provided are indicated by dark hatching.

[0102] The contact hole 56 is provided between the gate runner 130 and the anode pad 112 or cathode pad 114. The contact hole 56 may also be provided between the gate runner 130 and the temperature sense diode 115, or between the gate runner 130 and the connecting metal 122.

[0103] The contact hole 56 may be longer than one side of the anode pad 112 and may be longer than one side of the cathode pad 114. In this example, the contact hole 56 surrounds the anode pad 112 and the cathode pad 114. In addition, the contact hole 56 in this example surrounds the temperature sense diode 115 and the connecting metal 122.

[0104] The area enclosed by the contact hole 56 does not need to have a gate runner 130. In other words, the area enclosed by the contact hole 56 does not need to have a gate structure. The gate structure is the part that forms a channel and allows current to flow when a gate voltage is applied from the gate pad 116. Examples of gate structures include a trench gate structure or a planar gate structure. In other words, the area enclosed by the contact hole 56 does not need to have a transistor section. In this example, a temperature sense diode 115 is provided in the area enclosed by the contact hole 56. The transistor section may be provided in the active section 120.

[0105] The contact hole 56 may be surrounded by the gate runner 130. In this example, the contact hole 56 is surrounded by the poly runner 133. There is no active portion 120 between the poly runner 133 and the contact hole 56.

[0106] Let d1 be the shortest distance between the anode pad 112 and the cathode pad 114. The distance d1 may be 50 μm or less, 40 μm or less, or 30 μm or less. The distance may be 5 μm or more. In this example, the distance is 15 μm or more and 20 μm or less. If a connecting metal 122 is provided between the anode pad 112 and the cathode pad 114, the distance d2 between the anode pad 112 and the cathode pad 114 facing each other across the connecting metal 122 may be 250 μm or less. The distance may be 120 μm or more. In this example, the distance is 200 μm or more and 210 μm or less. For example, when a silicon carbide semiconductor substrate is used as the semiconductor substrate 10, the chip size is often reduced from the viewpoint of the yield rate due to crystal defects, the advantages in physical properties compared to silicon, and cost benefits. To make effective use of the active portion 120, a temperature sense diode 115 is provided between the pads outside the active portion 120 (in this example, between the anode pad 112 and the cathode pad 114). However, due to the small chip size, the distances d1 and d2 between the pads are also small. However, the semiconductor substrate 10 is not limited to a silicon carbide semiconductor substrate. The semiconductor substrate 10 may be a silicon semiconductor substrate or a wide-bandgap semiconductor substrate such as gallium nitride.

[0107] Figure 15 shows the arrangement of electrodes in region A. In addition to Figure 14, Figure 15 shows the arrangement of the interlayer insulating film 38, source electrode 52, and metal electrode 62. The hatching of each component is the same as in Figure 5. In this example as well, the position of the contact hole 56 is indicated by dark hatching.

[0108] The contact hole 56 is provided in a position that overlaps with the second portion 72 of the metal electrode 62, which is located inside the gate runner 130. This connects the metal electrode 62 to the upper surface 21 of the semiconductor substrate 10. The metal electrode 62 may also be connected to the source electrode 52. In other words, by providing the contact hole 56, the upper surface 21 of the semiconductor substrate 10 and the source electrode 52 can be electrically connected around the temperature sense diode 115 (hereinafter referred to as source contact). This allows the displacement current, which will be described later, to be drawn out, stabilizing the potential below the temperature sense diode 115 and preventing the displacement current from concentrating.

[0109] When defining the active area 120 as a region where the source electrode 52 and the semiconductor substrate 10 are in periodic contact, this contact does not necessarily include contact between the metal electrode 62 and the semiconductor substrate 10 via the contact hole 56. Furthermore, the active area 120 may be a region where an n-type source region with a higher doping concentration than the drift region 18 is periodically or continuously exposed on the upper surface 21 of the semiconductor substrate 10. The ends of the region where the source region is exposed on the upper surface 21 of the semiconductor substrate 10 in the X-axis direction may be considered the ends of the active area 120 in the X-axis direction. The ends of the region where the source region is exposed on the upper surface 21 of the semiconductor substrate 10 in the Y-axis direction may be considered the ends of the active area 120 in the Y-axis direction. The active area 120 may be a rectangular region defined by the aforementioned ends in the X-axis direction and the aforementioned ends in the Y-axis direction. In this example, the contact hole 56 is entirely located outside the active area 120.

[0110] Figure 16A is a cross-sectional view showing an example of the A-A' line in Figure 15. The A-A' section is a YZ section passing through the main diode 155, cathode pad 114, and protection diode 125. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 16A. Figure 16A differs from the A-A' section in Figure 6 in that a contact hole 56 is formed in the insulating film. Also, Figure 16A shows the boundary between the first part 71 and the second part 72 of the metal electrode 62.

[0111] The insulating film is provided between the upper surface 21 of the semiconductor substrate 10 and the metal electrode 62. In this example, the insulating film is a field oxide film 36 and an interlayer insulating film 38. The field oxide film 36 is provided on the upper surface 21 of the semiconductor substrate 10. The interlayer insulating film 38 is provided above the field oxide film 36 and the gate runner 130 (poly runner 133 in this example). In this example, the contact hole 56 is formed by penetrating the interlayer insulating film 38 and the field oxide film 36.

[0112] The interlayer insulating film 38 in this example has a shape with undulations that reflect the shape of the poly runner 133. That is, in the vicinity of the poly runner 133, the upper surface of the interlayer insulating film 38 is pushed upward (positive Z-axis side) by the poly runner 133 (hereinafter referred to as a convex portion). Also, away from the poly runner 133, the upper surface of the interlayer insulating film 38 is recessed downward (negative Z-axis side) (hereinafter referred to as a concave portion). Similar undulations are also formed by the main diode 155 and the protective diode 125. The contact hole 56 in this example is provided on the convex portion of the interlayer insulating film 38.

[0113] The second portion 72 of the metal electrode 62 is connected to the upper surface 21 of the semiconductor substrate 10 via a contact hole 56. In the A-A' section of this example, the connection is made at two points in the Y-axis direction, flanking the main diode 155 and the protection diode 125. A contact plug made of tungsten or a barrier metal made of titanium may be formed inside the contact hole 56.

[0114] The second part 72 may be connected to the well region 17 via a contact hole 56. In other words, the contact hole 56 may be located above the well region 17. The entire contact hole 56 may be located above the well region 17. The well region 17 may surround the active portion 120 in a top view.

[0115] Figure 16B is a cross-sectional view showing another example of the line A-A' in Figure 15. In this example, the position of the contact hole 56 is different from that in Figure 16A. In this example, the contact hole 56 is formed in a recess of the interlayer insulating film 38. By forming the contact hole 56 in such a position, source contact can be made near the temperature sense diode 115.

[0116] Figure 17A is a cross-sectional view showing an example of the B-B' line in Figure 15. The B-B' section is a YZ section passing through the main diode 155 and the protection diode 125. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 17A. Figure 17A differs from the B-B' section in Figure 7 in that a contact hole 56 is formed in the insulating film. Also, Figure 17A shows the boundary between the first part 71 and the second part 72 of the metal electrode 62. In this example, the contact hole 56 is formed in the convex portion of the interlayer insulating film 38.

[0117] Figure 17B is a cross-sectional view showing another example of the line B-B' in Figure 15. In this example, the contact hole 56 is formed in a recess of the interlayer insulating film 38. By forming the contact hole 56 in such a position, source contact can also be made near the temperature sense diode 115.

[0118] Figure 18A is a cross-sectional view showing an example of the C-C' line in Figure 15. The C-C' section is the XZ section passing through the main diode 155. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 18A. Figure 18A differs from the C-C' section in Figure 8 in that a contact hole 56 is formed in the insulating film. Also, Figure 18A shows the boundary between the first part 71 and the second part 72 of the metal electrode 62. In this example, the contact hole 56 is formed in the convex portion of the interlayer insulating film 38.

[0119] Figure 18B is a cross-sectional view showing another example of the C-C' line in Figure 15. In this example, the contact hole 56 is formed in a recess of the interlayer insulating film 38. By forming the contact hole 56 in such a position, source contact can also be made near the temperature sense diode 115.

[0120] Figure 19A is a cross-sectional view showing an example of the D-D' line in Figure 15. The D-D' section is a YZ section passing through the polyrunner 133 provided between the anode pad 112 and cathode pad 114 and the active portion 120. However, the lower surface of the semiconductor substrate 10 is omitted in Figure 9. Figure 19A differs from the D-D' section in Figure 9 in that a contact hole 56 is formed in the insulating film. In this example, the contact hole 56 is formed in the convex portion of the interlayer insulating film 38.

[0121] Figure 19B is a cross-sectional view showing another example of the D-D' line in Figure 15. In this example, the contact hole 56 is formed in a recess of the interlayer insulating film 38. By forming the contact hole 56 in such a position, source contact can be made near the temperature sense diode 115. Although Figures 16A to 19B show examples in which the contact hole 56 is formed in a convex or concave portion of the interlayer insulating film 38, the contact hole 56 may also be formed across both the convex and concave portions of the interlayer insulating film. In the embodiments of the present invention, regardless of which of the above positions the contact hole 56 is formed in, the metal electrode 62 covers the step difference between the convex and concave portions of the interlayer insulating film 38 by the poly runner 133, similar to Figures 5 to 9, thereby suppressing short circuits between the anode pad 112 and the cathode pad 114.

[0122] Figure 20 shows a C-C' cross-section of the semiconductor device 100 in the reference example. The semiconductor device 100 in the reference example does not have a contact hole 56. When a temperature sense diode 115 is placed between signal pads without a contact hole 56, as in this example, DVDT breakdown may occur around the temperature sense diode 115 due to high-speed switching operation. This is thought to be because, since there is no poly runner 133 below the temperature sense diode 115, the junction capacitance becomes small, the potential tends to rise easily, and the displacement current concentrates. The breakdown is presumed to occur at the end of the poly runner 133 on the temperature sense diode 115 side. In Figure 20, this end is shown by a dotted line.

[0123] By providing the contact holes 56 shown in Figures 14 and 15, the displacement current can be drawn out, preventing it from concentrating around the temperature sense diode 115. This improves the DVDT withstand capability and enables high-speed switching operation.

[0124] Figure 21 is a circuit diagram of a semiconductor circuit 500 comprising the semiconductor device 100 of the embodiment. The semiconductor circuit 500 comprises a plurality of semiconductor devices 100 connected in parallel. In this example, the semiconductor circuit 500 comprises two semiconductor devices 100, semiconductor device 100-1 and semiconductor device 100-2, connected in parallel.

[0125] Of the multiple semiconductor devices 100, at least one semiconductor device 100 may have a temperature sense diode 115. Of the multiple semiconductor devices 100, at least one semiconductor device 100 does not need to have a temperature sense diode 115. In this example, semiconductor device 100-1 has a temperature sense diode 115, while semiconductor device 100-2 does not. This allows temperature detection in the semiconductor device 100 having the temperature sense diode 115, while increasing the area of ​​the active part 120 or reducing the chip size in the other semiconductor devices 100. Of the multiple semiconductor devices 100, only one semiconductor device 100 may have a temperature sense diode 115.

[0126] Although the present invention has been described above using embodiments, the technical scope of the present invention is not limited to the scope described in the above embodiments. It will be apparent to those skilled in the art that various modifications or improvements can be made to the above embodiments. The above embodiments are not limited to silicon carbide semiconductor substrates, but may be silicon substrates or wide-bandgap semiconductor substrates such as gallium nitride. It is clear from the claims that such modified or improved forms may also be included in the technical scope of the present invention. [Explanation of Symbols]

[0127] 10... Semiconductor substrate, 17... Well region, 18... Drift region, 21... Top surface, 36... Field oxide film, 38... Interlayer insulating film, 52... Source electrode, 54... Contact hole, 56... Contact hole, 58... Residue, 62... Metal electrode, 71... First part, 72... Second part, 80... Protective film, 90... Edge termination structure, 100... Semiconductor device, 112... Anode pad, 114... ...Cathode pad, 115...Temperature sense diode, 116...Gate pad, 117...Built-in resistance measurement pad, 118...Auxiliary source pad, 120...Active part, 122...Connecting metal, 125...Protective diode, 130...Gate runner, 131...Metal runner, 133...Poly runner, 140...Outer edge, 142...First edge, 155...Main diode, 500...Semiconductor circuit

Claims

1. A semiconductor substrate having an upper surface, A temperature sense diode is disposed above the upper surface of the semiconductor substrate, An anode pad is positioned above the upper surface of the semiconductor substrate and connected to the anode of the temperature sense diode, A cathode pad is positioned above the upper surface of the semiconductor substrate and connected to the cathode of the temperature sense diode, A gate pad positioned above the upper surface of the semiconductor substrate, A gate runner is positioned above the upper surface of the semiconductor substrate and connected to the gate pad. Equipped with, All areas between the anode pad and the cathode pad do not overlap with the gate runner. Semiconductor equipment.

2. The anode pad and the cathode pad do not overlap with the gate runner. The semiconductor device according to claim 1.

3. The gate runner is made of polysilicon. The semiconductor device according to claim 1.

4. The temperature sense diode is located in the region between the anode pad and the cathode pad. The semiconductor device according to claim 1.

5. The gate runner surrounds the temperature sense diode, the anode pad, and the cathode pad. The semiconductor device according to any one of claims 1 to 4.

6. The semiconductor substrate further comprises a metal electrode positioned above the upper surface, The metal electrode surrounds the anode pad and the cathode pad. The aforementioned metal electrode is The first part overlapping with the aforementioned gate runner, The second portion extends further inward than the aforementioned gate runner and The semiconductor device according to claim 5, having the following features.

7. In a top view, the inner end of the gate runner completely overlaps with the metal electrode. The semiconductor device according to claim 6.

8. The aforementioned metal electrode is the source potential electrode. The semiconductor device according to claim 6.

9. The metal electrode and the cathode pad are at the same potential. The semiconductor device according to claim 6.

10. The semiconductor substrate has an active region on which a semiconductor element is formed. The anode pad and the cathode pad are arranged along the first direction, In a top view, in a second direction perpendicular to the first direction, the anode pad, the cathode pad, and the active portion face each other. The gate runner is provided between the anode pad and the cathode pad and the active portion. The semiconductor device according to any one of claims 1 to 4.

11. The semiconductor substrate further comprises a field oxide film provided on the upper surface thereof, The temperature sense diode, the anode pad, and the cathode pad are provided above the field oxide film. The end of the field oxide film is located below the gate runner provided between the anode pad and the cathode pad and the active portion in the second direction. The semiconductor device according to claim 10.

12. The semiconductor substrate has an active region on which a semiconductor element is formed. The aforementioned gate runner is The outer runner portion surrounding the active portion, A temperature sense runner portion surrounding the anode pad and the cathode pad. It has, The outer runner portion includes a laminated runner in which a metal runner and a poly runner are stacked. At least a portion of the temperature-sensing runner section is a non-laminated runner that includes the poly runner but does not include the metal runner. The semiconductor device according to any one of claims 1 to 4.

13. The semiconductor substrate further comprises a metal electrode positioned above the upper surface, The aforementioned metal electrode is The first portion overlapping with the aforementioned non-laminated runner, The second portion extends further inward than the aforementioned non-laminated runner and It has, The aforementioned metal electrode is the source potential electrode. The semiconductor device according to claim 12.

14. The temperature sense diode is A main diode with an anode connected to the anode pad, A protective diode with an anode connected to the cathode pad and It has, The anode pad and the cathode pad are arranged along the first direction, In a top view, in a second direction perpendicular to the first direction, the length of the main diode is greater than the length of the protective diode. The semiconductor device according to any one of claims 1 to 4.

15. The semiconductor substrate is a silicon carbide semiconductor substrate. The semiconductor device according to any one of claims 1 to 4.

16. The semiconductor substrate is either a silicon semiconductor substrate or a gallium nitride substrate. The semiconductor device according to any one of claims 1 to 4.

17. The semiconductor substrate further comprises an insulating film provided between the upper surface and the metal electrode, The insulating film has contact holes formed in it. The second portion is connected to the upper surface of the semiconductor substrate via the contact hole. The semiconductor device according to claim 6.

18. The contact hole surrounds the anode pad and the cathode pad. The semiconductor device according to claim 17.

19. The aforementioned semiconductor substrate is The drift region of the first conductivity type, A second conductivity type well region is provided between the drift region and the upper surface of the semiconductor substrate. It has, The second portion is connected to the well region via the contact hole. The semiconductor device according to claim 18.

20. The area enclosed by the aforementioned contact hole is not provided with the aforementioned gate runner. The semiconductor device according to claim 19.

21. The contact hole is surrounded by the gate runner. The semiconductor device according to claim 19.

22. The temperature sense diode is positioned in the region between the anode pad and the cathode pad. The distance between the anode pad and the cathode pad is 250 μm or less. The semiconductor device according to claim 19.

23. The insulating film is A field oxide film provided on the upper surface of the semiconductor substrate, The field oxide film and the interlayer insulating film provided above the gate runner A semiconductor device according to claim 19, having the following features.

24. A plurality of semiconductor devices according to claim 18, Multiple of the aforementioned semiconductor devices are connected in parallel, Of the plurality of semiconductor devices, at least one has the temperature sense diode, and at least one does not have the temperature sense diode. Semiconductor circuit.

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