Modular mainframe layout supporting multiple semiconductor process modules or chambers

Abstract

The present invention provides a method and apparatus for bonding chiplets to a substrate. [Solution] A multi-chamber processing tool 500 for processing substrates includes a first equipment front-end module (EFEM) 102 having one or more load ports 114 for receiving one or more types of substrates, a second EFEM 502 having one or more load ports, and a plurality of atmospheric pressure modular mainframes (AMMs) 110 connected to each other, the plurality of AMMs including a first AMM 110a connected to the first EFEM and a last AMM 110i connected to the second EFEM, each of the plurality of AMMs including a transfer chamber 116 and one or more process chambers connected to the transfer chamber, the transfer chamber including a transfer robot 126 and buffers 120 located in adjacent AMMs of the plurality of AMMs and one or more process chambers.

Description

Technical Field

[0001]

[0001] Embodiments of the present disclosure generally relate to substrate processing equipment.

Background Art

[0002]

[0002] Substrates undergo various processes during the manufacture of semiconductor integrated circuit devices. Some of these processes include wafer dicing, where the processed wafer is placed on a dicing tape and cut or separated into a plurality of dies or chiplets. Once the wafer is diced, the chiplets generally remain placed on the dicing tape until they are picked up and bonded to a substrate. Conventional processing tools for cleaning, dicing, and bonding chiplets to a substrate generally include a plurality of tools or a single linear robot housed in a mainframe tool. A number of chambers or process modules are connected to the mainframe, which can approximately determine the length of the mainframe and the single linear robot. However, tools with a single linear robot housed in a mainframe have limited scalability and processing throughput.

[0003]

[0003] Therefore, the inventors have provided an improved multi-chamber processing tool for processing substrates.

Summary of the Invention

[0004]

[0004] The Specified Description provides a method and apparatus for bonding chiplets to a substrate. In some embodiments, a multi-chamber processing tool for processing substrates includes a first equipment front-end module (EFEM) having one or more load ports for receiving one or more types of substrates, a second EFEM having one or more load ports for receiving one or more types of substrates on the side of the multi-chamber processing tool opposite to the first EFEM, and a plurality of atmospheric pressure modular mainframes (AMMs) connected to each other, with a first AMM connected to the first EFEM and a last AMM connected to the second EFEM, each of the plurality of AMMs including a transfer chamber and one or more process chambers connected to the transfer chamber, the transfer chamber including a buffer configured to hold a plurality of one or more types of substrates, and the transfer chamber including a transfer robot configured to transfer one or more types of substrates between the buffer and the one or more process chamber and the buffer located in adjacent AMMs of the plurality of AMMs.

[0005]

[0005] In some embodiments, a multi-chamber processing tool for processing substrates includes: a first equipment front-end module (EFEM) having one or more first load ports for receiving a first type of substrate, one or more second load ports for receiving a second type of substrate having a plurality of chiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; a second EFEM having one or more second load ports for receiving a first type of substrate, one or more second load ports for receiving a second type of substrate having a plurality of chiplets, and an EFEM robot configured to transfer the first type of substrate and the second type of substrate; and a plurality of AMMs connected to each other, with a first AMM connected to the first EFEM and a last AMM connected to the second EFEM, each of the plurality of AMMs having a transfer chamber and a wet cleaning chamber, plasma chamber, degassing chamber, radiation chamber, AMMs comprising: one or more process chambers including at least one of bonder chambers, each transfer chamber including a buffer configured to hold one or more substrates of a first type and one or more substrates of a second type, and each transfer chamber including a transfer robot configured to transfer the substrates of a first type and a second type between the buffers and one or more process chambers and buffers located in adjacent AMMs of the AMMs; and one or more process chambers of the first AMM of the AMMs including at least one of plasma chambers or degassing chambers and a wet cleaning chamber, each second AMM of the AMMs connected to the first AMMs including at least one of plasma chambers or degassing chambers, and each third AMM of the AMMs connected to the second AMMs including one or more bonder chambers configured to remove a plurality of chiplets from a second type substrate and bond the plurality of chiplets onto a first type substrate.

[0006]

[0006] In some embodiments, a method for bonding multiple chiplets onto a substrate includes: loading a first type of substrate onto a first load port of an instrument front-end module (EFEM) of a multi-chamber processing tool having multiple AMMs; using an EFEM robot to transfer the first type of substrate to a first buffer located in a first AMM connected to the EFEM; continuously transferring the first type of substrate from the first buffer to a first wet cleaning chamber for performing a cleaning process, a first degassing chamber for performing a degassing process to dry the first type of substrate, a first plasma chamber for performing a plasma etching process to remove unwanted material from the first type of substrate, and a bonder chamber; using an EFEM robot to transfer a second type of substrate having multiple chiplets to the first buffer; and first The process includes: continuously transferring the second type of substrate from a buffer to a second wet cleaning chamber for performing a cleaning process; a second degassing chamber for performing a degassing process to dry the second type of substrate; a second plasma chamber for performing a plasma etching process to remove unwanted material from the second type of substrate; a radiation chamber for performing a radiation process to weaken the bonding between a plurality of chiplets and the second type of substrate; and a bonder chamber; transferring at least a portion of the plurality of chiplets from the second type of substrate to the first type of substrate in the bonder chamber; bonding at least a portion of the plurality of chiplets to the first type of substrate in the bonder chamber; and loading the first type of substrate having the bonded plurality of chiplets from the last AMM to the load port of the second EFEM of the multi-chamber processing tool.

[0007]

[0007] Further embodiments of the present disclosure are described below.

[0008]

[0008] By referring to exemplary embodiments of the present disclosure shown in the accompanying drawings, embodiments of the present disclosure summarized above and described in more detail below can be understood. However, the accompanying drawings only illustrate typical embodiments of the present disclosure and should not be considered limiting, and the present disclosure may also permit other equally valid embodiments. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 2] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 3] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 4] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, arranged in a T-shape, according to at least some embodiments of the present disclosure. [Figure 5] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, arranged in a U-shape, according to at least some embodiments of the present disclosure. [Figure 6] This figure shows a second type of substrate according to at least some embodiments of the present disclosure. [Figure 7] This is an isometric view showing a simplified atmospheric pressure modular mainframe according to at least some embodiments of the present disclosure. [Figure 8] This is a flowchart illustrating a method for bonding a chiplet to a substrate according to at least some embodiments of the present disclosure. [Figure 9]This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Figure 10] This is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. [Modes for carrying out the invention]

[0010]

[0019] For ease of understanding, the same reference numerals are used to indicate identical elements common to all drawings whenever possible. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment can be usefully incorporated into other embodiments without further detail.

[0011]

[0020] This specification provides embodiments of methods and apparatus for processing substrates. The apparatus generally comprises a multi-chamber processing tool, which includes one or more instrument front-end modules (EFEMs) for loading substrates into and out of a multi-chamber processing tool, connected to a plurality of AMMs configured to perform one or more processing steps on the substrates. One or more processing steps may be any suitable steps in the manufacturing or packaging of integrated circuits. For example, one or more processing steps may be configured to perform one or more of the following: a bonding process for bonding a plurality of chiplets onto the substrate, a plasma dicing or singration process, a substrate cleaning process, a substrate plating or coating process, etc. The plurality of AMMs generally interface with EFEMs and can deliver substrates to one or more process chambers associated with each AMM.

[0012]

[0021] Each of the multiple AMMs includes a transfer robot, and by operating the transfer robots in parallel, simultaneous processing of multiple substrates can be facilitated, thereby advantageously improving processing throughput. In an exemplary process of bonding multiple chiplets onto a substrate, a multi-chamber processing tool advantageously allows for bonding multiple chiplets of different sizes onto the substrate and enables multi-layer bonding of multiple chiplets onto the substrate within the multi-chamber processing tool.

[0013]

[0022] Figure 1 is a schematic top view showing a multi-chamber processing tool 100 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 100 generally includes an equipment front-end module (EFEM) 102 and a plurality of AMMs 110 connected in series to the EFEM 102. The plurality of AMMs 110 are configured to transport one or more types of substrates 112 back and forth from the EFEM 102 through the multi-chamber processing tool 100 and to perform one or more processing steps on one or more types of substrates 112. Each of the plurality of AMMs 110 generally includes a transport chamber 116 and one or more process chambers 106 connected to the transport chamber 116 to perform one or more processing steps. The plurality of AMMs 110 are connected to each other via their respective transport chambers 116, advantageously providing modular expandability and customizability of the multi-chamber processing tool 100. As shown in Figure 1, each AMM110 has three AMMs, with the first AMM110a connected to the EFEM102, the second AMM110b connected to the first AMM110a, and the third AMM110c connected to the second AMM110b.

[0014]

[0023] The EFEM102 includes a plurality of load ports 114 for receiving one or more types of substrates 112. In some embodiments, the one or more types of substrates 112 include 200 mm wafers, 300 mm wafers, 450 mm wafers, tape frame substrates, carrier substrates, silicon substrates, glass substrates, etc. In some embodiments, the plurality of load ports 114 include at least one of one or more first load ports 114a for receiving a first type of substrate 112a, or one or more second load ports 114b for receiving a second type of substrate 112b. In some embodiments, the first type of substrate 112a has a different size from the second type of substrate 112b. In some embodiments, the second type of substrate 112b includes a tape frame substrate or a carrier substrate. In some embodiments, the second type of substrate 112b includes a plurality of chiplets arranged on the tape frame or carrier plate. In some embodiments, the second type of substrate 112b may hold chiplets of different types and sizes. Therefore, one or more second load ports 114b may have different sizes or receiving surfaces configured to load second types of substrates 112b having different sizes.

[0015]

[0024] In some embodiments, multiple load ports 114 are arranged along a common side of the EFEM 102. Figure 1 shows a pair of first load ports 114a and a pair of second load ports 114b, but the EFEM 102 may include other combinations of load ports, such as one first load port 114a and three second load ports 114b.

[0016]

[0025] In some embodiments, the EFEM 102 includes a scan station 108 having a substrate ID reader for scanning one or more types of substrates 112 to identify information. In some embodiments, the substrate ID reader includes a barcode reader or an optical character recognition (OCR) reader. The multi-chamber processing tool 100 is configured to use any identification information from the scanned one or more types of substrates 112 and determine process steps, for example, different process steps for a first type of substrate 112a and a second type of substrate 112b based on the identification information. In some embodiments, the scan station 108 may also be configured to rotate to align a first type of substrate 112a or a second type of substrate 112b. In some embodiments, one or more of the plurality of AMMs 110 includes the scan station 108.

[0017]

[0026] The EFEM robot 104 is disposed in the EFEM 102 and is configured to transport a first type of substrate 112a and a second type of substrate 112b between a plurality of load ports 114 to the scan station 108. The EFEM robot 104 may include a substrate end effector for handling a first type of substrate 112a and a second end effector for handling a second type of substrate 112b. The EFEM robot 104 can rotate or rotate and move linearly.

[0018]

[0027] FIG. 6 is a diagram showing a second type of substrate 112b according to at least some embodiments of the present disclosure. In some embodiments, the second type of substrate 112b is generally a tape frame substrate that includes a layer of backing tape 602 surrounded by a tape frame 604. In use, a plurality of chiplets 606 can be attached to the backing tape 302. The plurality of chiplets 606 are generally formed via a singulation process that dices a semiconductor wafer 610 into the plurality of chiplets 606 or dies. In some embodiments, the tape frame 604 is made of a metal such as stainless steel. The tape frame 604 may have one or more notches 608 to facilitate alignment and handling. In the case of a semiconductor wafer 610 having a 300 mm diameter, the tape frame 604 may have a width of from about 340 mm to about 420 mm and a length of from about 340 mm to about 420 mm. The second type of substrate 112b may alternatively be a carrier plate configured such that a plurality of chiplets 606 are coupled to the carrier plate.

[0019]

[0028] Referring again to FIG. 1, one or more process chambers 106 may be in sealed engagement with the transfer chamber 116. The transfer chamber 116 generally operates at atmospheric pressure, but can be configured to operate at a vacuum pressure. For example, the transfer chamber 116 may be a non-vacuum chamber configured to operate at an atmospheric pressure of about 700 Torr or more. Further, although one or more process chambers 106 are generally shown to be orthogonal to the transfer chamber 116, one or more process chambers 106 may be disposed obliquely to the transfer chamber 116, or may be a combination of orthogonal and oblique. For example, the second AMM 110b illustrates a pair of one or more process chambers 106 disposed obliquely to the transfer chamber 116.

[0020]

[0029] The transfer chamber 116 includes a buffer 120 configured to hold one or more first type substrates 112a. In some embodiments, the buffer 120 is configured to hold one or more first type substrates 112a and one or more second type substrates 112b. The transfer chamber 116 includes a transfer robot 126 configured to transfer the first type substrates 112a and second type substrates 112b between the buffer 120, one or more process chambers 106, and buffers located in adjacent AMMs of a plurality of AMMs 110. For example, the transfer robot 126 of the first AMM 110a is configured to transfer the first type substrates 112a and second type substrates 112b between the buffer 120 of the first AMM 110a and the second AMM 110b. In some embodiments, the buffer 120 is located within the internal area of ​​the transfer chamber 116 to advantageously reduce the overall tool footprint. In addition, the buffer 120 may be open to the internal region of the transfer chamber 116 to facilitate access by the transfer robot 126. In some embodiments, the buffer 120 may also be configured to perform a radiation process on a second type of substrate 112b.

[0021]

[0030] Figure 7 is an isometric view showing a plurality of transfer chambers 116 of an AMM 110 according to at least some embodiments of the present disclosure. The transfer chambers 116 are shown in a simplified form to illustrate the main components. The transfer chambers 116 generally include a frame 710 surrounding the transfer chambers 116, which are covered by plates (an upper plate 712 shown in Figure 7, and side plates not shown). In some embodiments, the transfer chambers 116 have a width shorter than their length. The upper plate 712 (or side plate) may include an access opening 716 that is selectively opened and closed to service the transfer chambers 116. The side plates include openings to interface with at least one of one or more process chambers 106, EFEM 102, or adjacent transfer chambers. Although Figure 7 shows a rectangular or box-shaped transfer chamber 116, the transfer chambers 116 may have any other suitable shape, such as cylindrical or hexagonal. One or more process chambers 106 may be connected perpendicularly to the transfer chamber 116, or diagonally to the transfer chamber 116.

[0022]

[0031] The transfer chamber 116 may have one or more environmental controls. For example, the airflow opening of the transfer chamber 116 (e.g., the access opening 716) may include a filter for filtering the airflow entering the transfer chamber 116. Other environmental controls may include one or more of humidity control, electrostatic control, temperature control, or pressure control.

[0023]

[0032] The transfer robot 126 is generally housed within a frame 710. The transfer robot 126 is configured to rotate or rotate and move linearly within the transfer chamber 116. In some embodiments, the transfer robot 126 moves linearly via rails on the floor of the transfer chamber 116 or via wheels beneath the transfer robot 126. The transfer robot 126 includes a telescopic arm 720 having one or more end effectors 730 that can extend into one or more process chambers 106 and adjacent AMMs. In some embodiments, one or more end effectors 730 include a substrate end effector for handling a first type of substrate 112a and a second end effector for handling a second type of substrate 112b. In some embodiments, for a transfer chamber 116 having a length of about 2.0 to about 2.5 meters, the telescopic arm 720 may have a stroke length of up to about 1.0 meter. In some embodiments, the EFEM robot 104 is of the same type and configuration as the transfer robot 126 in order to increase the commonality of parts.

[0024]

[0033] The buffer 120 is housed within the frame 710, for example, in an internal area of ​​the frame 710. In some embodiments, the buffer 120 is configured to rotate and align a first type of substrate 112a and a second type of substrate 112b in a desired manner. In some embodiments, the buffer is configured to hold one or more types of substrates 112 in a vertical stack, advantageously reducing the footprint of the transfer chamber 116. For example, in some embodiments, the buffer 120 includes a plurality of shelves 722 for storing or holding one or more first type of substrates 112a and one or more second type of substrates 112b. In some embodiments, the plurality of shelves 722 are arranged in a vertically spaced configuration. In some embodiments, the buffer 120 includes six shelves. In some embodiments, the plurality of shelves include two shelves for accommodating the second type of substrate 112b.

[0025]

[0034] Referring again to Figure 1, one or more process chambers 106 may include an atmospheric chamber configured to operate under atmospheric pressure and a vacuum chamber configured to operate under vacuum pressure. Examples of atmospheric chambers may generally include wet cleaning chambers, radiation chambers, heating chambers, measurement chambers, bonding chambers, etc. An example of a vacuum chamber may include a plasma chamber. The atmospheric chambers of the types described above may also be configured to operate under vacuum if necessary. One or more process chambers 106 may be any process chamber or module necessary to perform bonding processes, dicing processes, cleaning processes, plating processes, etc.

[0026]

[0035] In some embodiments, one or more process chambers 106 of each of the multiple AMM110 include at least one of the wet cleaning chamber 122, plasma chamber 130, degassing chamber 132, radiation chamber 134, or bonder chamber 140, such that the multi-chamber processing tool 100 includes at least one wet cleaning chamber 122, at least one plasma chamber 130, at least one degassing chamber 132, at least one radiation chamber 134, and at least one bonder chamber 140.

[0027]

[0036] The wet cleaning chamber 122 is configured to perform a wet cleaning process for cleaning one or more types of substrates 112 via a fluid such as water. The wet cleaning chamber 122 may include a first wet cleaning chamber 122a for cleaning a first type of substrate 112a, or a second wet cleaning chamber 122b for cleaning a second type of substrate 112b.

[0028]

[0037] The degassing chamber 132 is configured to perform a degassing process to remove moisture from the substrate 112, for example, through a high-temperature firing process. In some embodiments, the degassing chamber 132 includes a first degassing chamber 132a for a first type of substrate 112a and a second degassing chamber 132b for a second type of substrate 112b.

[0029]

[0038] The plasma chamber 130 may be configured to perform an etching process to remove unwanted materials, such as organic materials and oxides, from a first type substrate 112a or a second type substrate 112b. In some embodiments, the plasma chamber 130 includes a first plasma chamber 130a for the first type substrate 112a and a second plasma chamber 130b for the second type substrate 112b. The plasma chamber 130 may also be configured to perform an etching process to dice the substrate 112 into chiplets. In some embodiments, the plasma chamber 130 may be configured to perform a deposition process, such as a physical vapor deposition process or a chemical vapor deposition process, to coat the first type substrate 112a or the second type substrate 112b with a layer of the desired material.

[0030]

[0039] The radiation chamber 134 is configured to perform a radiation process on a second type of substrate 112b to reduce adhesion between the multiple chiplets 606 and the backing tape 602. For example, the radiation chamber 134 may be an ultraviolet chamber configured to expose the backing tape 602 to ultraviolet light, or a heating chamber configured to heat the backing tape 602. By reducing adhesion between the multiple chiplets 606 and the backing tape 602, the multiple chiplets 606 can be easily removed from the second type of substrate 112b. In some embodiments, the radiation chamber 134 is configured to hold and process multiple second type of substrates 112b.

[0031]

[0040] The bonder chamber 140 is configured to transfer and bond at least a portion of a plurality of chiplets 606 to one of the first type of substrates 112a. The bonder chamber 140 generally includes a first support 142 that supports one of the first type of substrates 112a and a second support 144 that supports one of the second type of substrates 112b.

[0032]

[0041] In some embodiments, one or more process chambers 106 of the first AMM 110a include at least one of a plasma chamber 130 or a degassing chamber 132, and include a wet cleaning chamber 122. In the exemplary embodiment shown in Figure 1, the first AMM 110a includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the first AMM 110a. In some embodiments, the first AMM 110a includes a first wet cleaning chamber 122a and a second wet cleaning chamber 122b on a second side opposite to the first side of the first AMM 110a. In some embodiments, the second AMM includes a radiation chamber 134 and at least one of a plasma chamber 130 or a degassing chamber 132.

[0033]

[0042] In some embodiments, the last AMM of a plurality of AMMs 110, for example the third AMM 110c in Figure 1, includes one or more bonder chambers 140 (two shown in Figure 1). In some embodiments, the first of two bonder chambers is configured to remove and bond chiplets having a first size, and the second of two bonder chambers is configured to remove and bond chiplets having a second size. In some embodiments, any of the plurality of AMMs 110 includes a measurement chamber 118 configured to perform measurements of one or more types of substrates 112. In Figure 1, the measurement chamber 118 is shown as part of the second AMM 110b, coupled to the transfer chamber 116 of the second AMM 110b. However, the measurement chamber 118 may be coupled to or located within any transfer chamber 116.

[0034]

[0043] The controller 180 controls the operation of any of the multi-chamber processing tools described herein, including the multi-chamber processing tool 100. The controller 180 may use direct control of the multi-chamber processing tool 100, or alternatively, control a computer (or controller) associated with the multi-chamber processing tool 100. In the process, the controller 180 enables data collection and feedback from the multi-chamber processing tool 100 to optimize its performance. The controller 180 generally includes a central processing unit (CPU) 182, memory 184, and support circuits 186. The CPU 182 may be any form of general-purpose computer processor available for use in an industrial environment. The support circuits 186 are conventionally connected to the CPU 182 and may include a cache, clock circuit, input / output subsystem, power supply, etc. Software routines, such as those described below, are stored in memory 184 and, when executed by the CPU 182, can be transformed into a computer for a specific purpose (controller 180). The software routine may also be stored and / or executed by a second controller (not shown) located remotely from the multi-chamber processing tool 100.

[0035]

[0044] Memory 184 is a form of computer-readable storage medium containing instructions that, when executed by the CPU 182, facilitate the operation of semiconductor processes and equipment. The instructions in Memory 184 are in the form of a program product, such as a program, that implements the methods of the present principle. The program code may conform to one of a number of different programming languages. For example, the present disclosure may be executed as a program product stored in a computer-readable storage medium for use with a computer system. The program(s) in the program product define the function of the embodiment (including the methods described herein). Exemplary computer-readable storage mediums include, but are not limited to, non-writable storage mediums in which information is permanently stored (e.g., read-only memory devices in a computer, such as CD-ROM disks, flash memory, ROM chips, or any type of solid-state non-volatile semiconductor memory, readable by a CD-ROM drive) and writable storage mediums in which modifiable information is stored (e.g., floppy disks in a diskette drive or hard disk drive, or any type of solid-state random-access semiconductor memory). Such a computer-readable storage medium is an embodiment of the present principle if it carries computer-readable instructions that direct the function of the methods described herein.

[0036]

[0045] Figure 2 is a schematic top view showing a multi-chamber processing tool 200 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 200 is similar to the multi-chamber processing tool 100, but differs in the configuration of one or more process chambers 106. The multi-chamber processing tool 200 includes three AMMs. In some embodiments, the first AMM 110a includes, on a first side of the first AMM 110a, a first degassing chamber 132a configured to degas a first type of substrate 112a and a second degassing chamber 132b configured to degas a second type of substrate 112b, and on a second side opposite to the first side of the first AMM 110a, two second wet cleaning chambers 122b. In some embodiments, the second aspect of the first AMM110a may alternatively include two first wet cleaning chambers 122a, or one first wet cleaning chamber 122a and one second wet cleaning chamber 122b.

[0037]

[0046] In some embodiments, the second AMM110b includes a first plasma chamber 130a and a second plasma chamber 130b on a first side of the second AMM110b. In some embodiments, the second side of the second AMM110b opposite to the first side includes two first wet cleaning chambers 122a. In some embodiments, the second side of the second AMM110b includes the first wet cleaning chamber 122a and a radiation chamber 134. In some embodiments, one or more process chambers 106 of the last AMM, for example, the third AMM110c in Figure 2, include two bonder chambers 140 and a radiation chamber 134. In some embodiments, the radiation chamber 134 is positioned along the width of the transfer chamber 116. By placing the radiation chamber 134 in the third AMM110c, the multi-chamber processing tool 200 is advantageously equipped with two additional wet cleaning chambers 122 compared to the multi-chamber processing tool 100.

[0038]

[0047] Figure 3 is a schematic top view showing a multi-chamber processing tool 300 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 300 is similar to the multi-chamber processing tool 200, except that the multi-chamber processing tool 300 includes a fourth AMM110d and a fifth AMM110e. In some embodiments, the plurality of AMM110s include one or more AMMs having one or more bonder chambers 140 positioned between the first AMM110a and the last AMM, for example, the fifth AMM110e in Figure 3.

[0039]

[0048] In some embodiments, the multi-chamber processing tool 300 includes six bonder chambers 140, which are configured to process chiplets of the same type and size or different types and sizes. In some embodiments, a fifth AMM 110e includes a radiation chamber 134. The modular configuration of the multi-chamber processing tool 300 favorably facilitates simultaneous bonding of additional substrates and additional types and sizes of chiplets compared to the multi-chamber processing tool 200 in Figure 2.

[0040]

[0049] Figure 4 is a schematic top view showing a multi-chamber processing tool 400 for bonding chiplets to a substrate, arranged in a T-shape according to at least some embodiments of the present disclosure. The T-shape configuration of the multi-chamber processing tool 400 has the same or similar number of process chambers as the multi-chamber processing tool 300, while advantageously reducing the length of the tool compared to a linear layout such as the multi-chamber processing tool 300.

[0041]

[0050] In some embodiments, as shown in Figure 4, the plurality of AMM110s include a bonding module 410 connected to the AMMs on three sides of the bonding module 410. In some embodiments, the plurality of AMM110s comprises a first AMM110a connected to the EFEM102 and a second AMM110b connected to the first AMM110a at one end and connected to the bonding module 410 at the opposite end. In some embodiments, a third AMM110c and a fourth AMM110d are connected to the bonding module 410 on opposing sides of the bonding module 410. In some embodiments, a fifth AMM110e is connected to the fourth AMM110d at the end opposite to the bonding module 410. In some embodiments, a transfer robot 126 within the bonding module 410 is configured to transfer one or more types of substrates 112 between a buffer 120 within the bonding module 410 and buffers within the third AMM 110c and the fourth AMM 110d. In some embodiments, the bonding module 410 includes a radiation chamber 134 on the side of the bonding module 410 opposite to the second AMM 110b.

[0042]

[0051] Figure 5 is a schematic top view showing a multi-chamber processing tool 500 for bonding chiplets to a substrate, arranged in a U-shape according to at least some embodiments of the present disclosure. The multi-chamber processing tool 500 includes a plurality of AMMs 110 arranged in a U-shape. As shown in Figure 5, a first set of three AMMs 110a to 110c are arranged linearly, a second set of three AMMs 110d to 110f extend perpendicularly from the first set, and a third set of three AMMs 110g to 110i extend perpendicularly from the second set and parallel to the first set. The U-shape configuration of the multi-chamber processing tool 500 advantageously reduces the length of the tool compared to a linear configuration such as the multi-chamber processing tool 300 in Figure 3.

[0043]

[0052] In some embodiments, the second EFEM 502 is coupled to the last AMM of a plurality of AMMs 110. For example, in Figure 5, the last AMM, or the ninth AMM 110i, is coupled to the second EFEM 502. In some embodiments, the second EFEM 502 includes one or more load ports 514 and an EFEM robot 104. In some embodiments, the one or more load ports 514 include one or more first load ports 514a for receiving a first type of substrate 112a and one or more second load ports 514b for receiving a second type of substrate 112b having a plurality of chiplets. In some embodiments, the one or more load ports 514 include four second load ports 514b and do not include the first load ports 514a. Adding the second EFEM 502 advantageously adds additional load ports and additional scan stations 108 to the tool, improving processing throughput. Furthermore, the addition of the second EFEM 502 allows one or more types of substrates 112 to enter the multi-chamber processing tool 500 from one end and exit from the other end without having to return to the first end, thereby reducing handling and improving processing throughput. The reduced handling of one or more types of substrates 112 can advantageously reduce particle generation and contamination in the multi-chamber processing tool 500. In some embodiments, each of the EFEM 102 and the second EFEM 502 has two or more load ports. In some embodiments, both the EFEM 102 and the second EFEM 502 include two or more first load ports 114a and four or more second load ports 116b. In some embodiments, both the EFEM 102 and the second EFEM 502 include two first load ports 114a and six second load ports 116b. The second EFEM 502 can be added to any of the multi-chamber processing tools described herein.

[0044]

[0053] In some embodiments using a U-shaped configuration, one of the multiple AMMs 110 may include two buffers 120. Figure 5 shows a sixth AMM 110f having two buffers 120, but any of the second set of three AMMs 110d to 110f may include two buffers 120. In some embodiments, the third AMM 110c and the seventh AMM 110g may include a radiation chamber 134. The configuration of one or more process chambers 106 associated with the multiple AMMs 110 in any of Figures 1 to 5 is illustrative, and one or more process chambers 106 can be rearranged in any suitable way for desired applications in any of the multi-chamber processing tools 100, 200, 300, 400, 500, 900, and 1000.

[0045]

[0054] Figure 8 is a flowchart showing a method 800 for bonding a chiplet to a substrate according to at least some embodiments of the present disclosure. In 802, the method 800 includes loading a substrate (e.g., a substrate load port 114a) onto a load port (e.g., a substrate load port 114a) of an equipment front-end module (EFEM) (e.g., equipment front-end module 102) of a multi-chamber processing tool (e.g., multi-chamber processing tool 100, 200, 300, 400, 500, 900, 1000) having a plurality of AMMs (e.g., a plurality of AMMs 110).

[0046]

[0055] In 804, method 800 includes using an EFEM robot (e.g., EFEM robot 104) to transfer a first type of substrate to a first buffer (e.g., buffer 120) located in a first AMM (e.g., first AMM 110a) connected to the EFEM. In some embodiments, the EFEM robot is used to transfer the first type of substrate to a scan station (e.g., scan station 108) in the EFEM before transferring it to the first buffer, to record identification information, and to determine process steps based on the identification information. For example, the identification information may indicate how many different types of chiplets to bond to the first type of substrate, how many layers of chiplets to bond to the first type of substrate, or at least one of the desired arrangements of chiplets when bonding to the first type of substrate. The identification information may also indicate which pre-bonding process steps are required (e.g., wet cleaning, plasma etching, degassing, UV treatment, etc.) and process parameters (e.g., duration, power, temperature, etc.). Identification information can be read via a circuit board ID reader such as an OCR reader or barcode reader.

[0047]

[0056] In 806, Method 800 includes successively transferring a first type of substrate from a first buffer to a first wet cleaning chamber (e.g., first wet cleaning chamber 122a) for performing a cleaning process, a first degassing chamber (e.g., first degassing chamber 132a) for performing a degassing process to dry the first type of substrate, a first plasma chamber (e.g., first plasma chamber 130a) for performing a plasma etching process to remove unwanted material from the first type of substrate, and a bonder chamber (e.g., bonder chamber 140), via a respective transfer robot (e.g., transfer robot 126) in each of a plurality of AMMs.

[0048]

[0057] In 808, method 800 includes using an EFEM robot to transfer a second type of substrate having multiple chiplets (e.g., a second type of substrate 112b) from a second load port (e.g., one or more second load ports 114b) to a first buffer. In some embodiments, the EFEM robot is used to transfer the second type of substrate to a scan station in the EFEM before transferring it to the first buffer, to record identification information, and to determine a process step based on the identification information. The identification information can be read via an OCR reader or a barcode reader.

[0049]

[0058] In 810, Method 800 includes sequentially transferring the second type of substrate from a first buffer to a second wet cleaning chamber (e.g., second wet cleaning chamber 122b) for performing a cleaning process, a second degassing chamber (e.g., second degassing chamber 132b) for performing a degassing process to dry the second type of substrate, a second plasma chamber (e.g., second plasma chamber 130b) for performing a plasma etching process to remove unwanted material from the second type of substrate, a radiation chamber (e.g., radiation chamber 134) for performing a radiation process to weaken the adhesive bond between the chiplet and the second type of substrate, and a bonder chamber, via each transfer robot of a plurality of AMMs. In some embodiments, the radiation process is a UV radiation process. In some embodiments, the radiation process is a heating process.

[0050]

[0059] In 812, method 800 includes transferring at least a portion of the plurality of chiplets from a second type of substrate to a first type of substrate in a bonder chamber. In 814, method 800 includes bonding at least a portion of the plurality of chiplets to the first type of substrate in a bonder chamber via a suitable bonding method. In some embodiments, after bonding at least a portion of the plurality of chiplets to the first type of substrate in a bonder chamber, the first type of substrate is transferred to a second bonder chamber. In some embodiments, the second substrate of the second type of substrate is transferred to a second bonder chamber. In some embodiments, the second substrate of the second type of substrate includes a plurality of second chiplets having different sizes from the plurality of chiplets. In some embodiments, in the second bonder chamber, at least a portion of the plurality of second chiplets are transferred onto and bonded to the first type of substrate. In 816, method 800 includes loading a substrate of a first type having a plurality of bonded chiplets from the last AMM into the load port of a second EFEM of a multi-chamber processing tool (e.g., a second EFEM).

[0051]

[0060] In some embodiments, a first type of substrate may be transferred to a third bonder chamber to bond a plurality of chiplets and a plurality of third chiplets having different sizes from a plurality of second chiplets to a first type of substrate. Thus, the multi-chamber processing tool is configured to accommodate N bonder chambers necessary to bond N different types or sizes of chiplets onto a given substrate. For example, the multi-chamber processing tool 400 in Figure 4 includes six bonder chambers corresponding to six different types or sizes of chiplets. Once bonding is complete, the first type of substrate is returned to the first load port via a buffer and the transfer robot of the multi-chamber processing tool. Once bonding is complete, the second type of substrate remains in the multi-chamber processing tool for subsequent processing or subsequent first type substrates, or is returned to the second load port via a buffer and the transfer robot.

[0052]

[0061] In some embodiments, multiple chiplets are arranged along a first layer of chiplets on a first type of substrate. In some embodiments, the first type of substrate having the first layer of chiplets is transferred to a first plasma chamber of a multi-chamber processing tool, where an auxiliary plasma etching process is performed to remove unwanted material. In some embodiments, the first type of substrate is then transferred to a bonding chamber or a second bonding chamber. In the bonding chamber or the second bonding chamber, multiple chiplets from a second type of substrate, or multiple second chiplets from one of the second type of substrates, are transferred onto the first layer along a second layer of chiplets. The second layer of chiplets may include chiplets of the same type and size as the first layer of chiplets. Alternatively, the second layer of chiplets may include at least one of chiplets of a different type or size than the first layer of chiplets.

[0053]

[0062] In some embodiments, a first type of substrate and a second type of substrate are processed simultaneously in a multi-chamber processing tool. In some embodiments, multiple first type substrates and multiple second type substrates are processed simultaneously in a multi-chamber processing tool to advantageously improve processing throughput. The multi-chamber processing tool may include a second EFEM (e.g., a second EFEM 502) or a third EFEM that provides additional load ports and scan stations to advantageously increase processing capacity. For example, while at least one of the first substrate of the first type or the first substrate of the second type undergoes a wet cleaning process, the second substrate of the first type undergoes a degassing process, and the third substrate of the first type and the second substrate of the second type undergo a bonding process. In another example, while the first substrate of the first type and the second substrate of the first type undergo a wet cleaning process, the third substrate of the first type undergoes a degassing process, and the fourth substrate of the first type and the fifth substrate of the first type undergo a bonding process using the first substrate of the second type and the second substrate of the second type, respectively. These are non-limiting examples of how multiple substrates of the first and second types may be processed in a multi-chamber processing tool.

[0054]

[0063] In some embodiments, a multi-chamber processing tool may be configured to perform a plasma dicing or singulation process using the plasma chamber of the multi-chamber processing tool before bonding the chiplets to a first type of substrate. In some embodiments, the multi-chamber processing tool may be configured to perform an additional cleaning or substrate plating process before or after bonding the chiplets to a first type of substrate. Multiple AMMs can generally interface with an EFEM to deliver substrates to one or more process chambers associated with each AMM. Thus, a desired throughput of substrates to be processed can be accommodated using an appropriate number of AMMs and associated process chambers.

[0055]

[0064] Figure 9 is a schematic top view showing a multi-chamber processing tool for bonding chiplets to a substrate according to at least some embodiments of the present disclosure. The multi-chamber processing tool 900 is similar to the multi-chamber processing tool 200, except that it includes a fourth AMM 110d and a second EFEM 502 connected to the fourth AMM 110d on the side opposite to the EFEM 102. In some embodiments, a radiation chamber 134 is connected to the fourth AMM 110d, and the second EFEM 502 is connected to the radiation chamber 134. Such an arrangement advantageously allows first-type substrates 112a and second-type substrates 112b to enter the multi-chamber processing tool 900 from the EFEM 102 and exit from the second EFEM 502, thereby improving throughput. The second EFEM 502 can be incorporated into any of the tools disclosed herein.

[0056]

[0065] In some embodiments, one or more of the transfer chambers 116 may include a pre-aligner 910 configured to rotate and align a first type of substrate 112a or a second type of substrate 112b to a desired orientation. The pre-aligner 910 may be separate from the buffer 120. In some embodiments, the transfer chambers 116 associated with the AMM 110 having a bonder chamber 140 may include the pre-aligner 910. In some embodiments, the radiation chamber 134 may be configured to rotate one or more types of substrates 112 placed within it.

[0057]

[0066] Figure 10 is a schematic top view showing a multi-chamber processing tool 1000 for bonding chiplets to a substrate, according to at least some embodiments of the present disclosure. The multi-chamber processing tool 1000 may be similar to the multi-chamber processing tool 900, except that it includes a plurality of EFEMs 102. In some embodiments, any of the multi-chamber processing tools disclosed herein may include a plurality of EFEMs 102 at one end of the tool and a second EFEM at the other end of the tool, for example, as shown in Figure 10. Having a plurality of EFEMs 102 can advantageously increase the capacity of one or more load ports, and thus improve throughput. Having a plurality of EFEMs 102 advantageously provides additional load ports, which can easily be used to add die types. For example, one EFEM 102 may include two load ports for a first type of substrate 112a and two load ports for a second type of substrate 112b, and another EFEM 102 may include four load ports for the second type of substrate 112b. The second type of substrate 112b may include dies of different types and sizes.

[0058]

[0067] In some embodiments, a transfer chamber 116 may be positioned between each of the EFEM 102 and the first AMM 110a. In some embodiments, the transfer chamber 116 may include one or more shelves 1010 configured to hold and rotate one or more types of substrates 112. In some embodiments, the transfer chamber may include one or more of the shelves 1010 on either side of a transfer robot 126 positioned within the transfer chamber 116. The transfer robot 126 may be configured to transfer the substrates 112 from one or more shelves 1010 to the first AMM 110a.

[0059]

[0068] While the above describes embodiments of the present disclosure, other and further embodiments of the present disclosure can be devised without departing from its basic scope.

Claims

1. A multi-chamber processing tool for processing substrates, A first equipment front-end module (EFEM) having one or more load ports for receiving one or more types of substrates, On the side of the multi-chamber processing tool opposite to the first EFEM, there is a second EFEM having one or more load ports for receiving one or more types of substrates, A plurality of interconnected atmospheric pressure modular mainframes (AMMs), comprising a first AMM connected to the first EFEM and a last AMM connected to the second EFEM, each of the plurality of AMMs including a transfer chamber and one or more process chambers connected to the transfer chamber, the transfer chamber including a buffer configured to hold a plurality of the one or more types of substrates, and a transfer robot configured to transfer the one or more types of substrates between the buffer, the one or more process chambers, and the buffers located in adjacent AMMs of the plurality of AMMs. A multi-chamber processing tool equipped with the following features.

2. The multi-chamber processing tool according to claim 1, wherein the one or more load ports of the first EFEM include one or more first load ports for receiving a first type of substrate and one or more second load ports for receiving a second type of substrate having a plurality of chiplets, and each of the one or more process chambers of the plurality of AMMs includes at least one of a wet cleaning chamber, a plasma chamber, a degassing chamber, a radiation chamber, or a bonder chamber, so that the multi-chamber processing tool includes at least one wet cleaning chamber, at least one plasma chamber, at least one degassing chamber, at least one radiation chamber, and at least one bonder chamber.

3. The multi-chamber processing tool according to claim 2, wherein the one or more process chambers of the first AMM include at least one of a plasma chamber or a degassing chamber and include a wet cleaning chamber, and the last AMM of the plurality of AMMs includes one or more bonder chambers configured to remove the plurality of chiplets from the second type of substrate and bond the plurality of chiplets onto the first type of substrate.

4. The multi-chamber processing tool according to claim 2, wherein the at least one wet cleaning chamber includes a first wet cleaning chamber for cleaning the first type of substrate and a second wet cleaning chamber for cleaning the second type of substrate; the at least one plasma chamber includes a first plasma chamber for processing the first type of substrate and a second plasma chamber for processing the second type of substrate; and the at least one degassing chamber includes a first degassing chamber for processing the first type of substrate and a second degassing chamber for processing the second type of substrate.

5. The multi-chamber processing tool according to any one of claims 1 to 4, wherein the transfer chamber is a non-vacuum chamber.

6. The multi-chamber processing tool according to any one of claims 1 to 4, wherein the plurality of AMMs include one or more AMMs having one or more bonder chambers positioned between the first AMM and the last AMM.

7. The plurality of AMMs include a first AMM connected to the first EFEM, a second AMM connected to the first AMM at one end and connected to a joining module at the opposite end, a third AMM and a fourth AMM connected to the joining module on opposing sides of the joining module, and a fifth AMM connected to the fourth AMM at the end opposite to the joining module, wherein the joining module includes a buffer and a transfer robot, the multi-chamber processing tool according to any one of claims 1 to 4.

8. The multi-chamber processing tool according to any one of claims 1 to 4, wherein the second EFEM includes an EFEM robot, and the plurality of AMMs are arranged in a linear or U-shaped configuration.

9. The multi-chamber processing tool according to any one of claims 1 to 4, wherein the first EFEM includes a scan station having a substrate ID reader.

10. The first EFEM includes one or more first load ports for receiving a first type of substrate, one or more second load ports for receiving a second type of substrate having a plurality of chiplets, and an EFEM robot configured to transport the first type of substrate and the second type of substrate. The second EFEM includes one or more second load ports for receiving the first type of substrate, one or more second load ports for receiving the second type of substrate, and an EFEM robot configured to transport the first type of substrate and the second type of substrate. The first AMM's one or more process chambers include at least one of a plasma chamber or a degassing chamber and a wet cleaning chamber; the second AMM of the plurality of AMMs connected to the first AMM includes at least one of a plasma chamber or a degassing chamber; and the third AMM of the plurality of AMMs connected to the second AMM includes one or more bonder chambers configured to remove a plurality of chiplets from the second type of substrate and bond the plurality of chiplets onto the first type of substrate. The multi-chamber processing tool according to claim 1.

11. The multi-chamber processing tool according to claim 10, wherein the third AMM includes two bonder chambers, the first of the two bonder chambers being configured to remove and bond a tiplet having a first size, and the second of the two bonder chambers being configured to remove and bond a tiplet having a second size.

12. The multi-chamber processing tool according to claim 10, wherein the buffer is configured to rotate and align the second type of substrate.

13. The multi-chamber processing tool according to any one of claims 10 to 12, wherein the EFEM robot and the transfer robot include a first end effector for handling the first type of substrate and a second end effector for handling the second type of substrate.

14. The multi-chamber processing tool according to any one of claims 10 to 12, wherein the transfer robot is configured to rotate and move linearly within the transfer chamber.

15. A method for bonding multiple chiplets onto a substrate, Loading a first type of substrate onto a first load port of an instrument front-end module (EFEM) of a multi-chamber processing tool having multiple atmospheric pressure modular mainframes (AMMs), Using an EFEM robot, transfer the first type of substrate to a first buffer located in a first AMM connected to the EFEM, The first type of substrate is continuously transferred from the first buffer to a first wet cleaning chamber for performing a cleaning process, a first degassing chamber for performing a degassing process to dry the first type of substrate, a first plasma chamber for performing a plasma etching process to remove unwanted material from the first type of substrate, and a bonder chamber. Using the EFEM robot, transfer a second type of substrate having multiple chiplets to the first buffer, The second type of substrate is continuously transferred from the first buffer to a second wet cleaning chamber for performing a cleaning process, a second degassing chamber for performing a degassing process to dry the second type of substrate, a second plasma chamber for performing a plasma etching process to remove unwanted material from the second type of substrate, a radiation chamber for performing a radiation process to weaken the bonding between the plurality of chiplets and the second type of substrate, and the bonder chamber. In the bonder chamber, at least a portion of the plurality of chiplets are transferred from the second type of substrate to the first type of substrate, In the bonder chamber, at least a portion of the plurality of chiplets are bonded to a substrate of the first type, Loading the first type of substrate having the bonded plurality of chiplets from the last AMM to the load port of the second EFEM of the multi-chamber processing tool A method that includes this.

16. To record identification information and determine process steps based on the recorded identification information, the EFEM robot is used to transport the first type of substrate and the second type of substrate to the scanning station of the first EFEM before transporting them to the first buffer. The method according to claim 15, further comprising:

17. Transferring the first type of substrate to the second bonder chamber, Transferring a second substrate of the second type of substrate to the second bonder chamber, wherein the second substrate of the second type of substrate includes a plurality of second chiplets having different sizes from the plurality of chiplets, Transferring at least a portion of the plurality of second chiplets onto the first type of substrate The method according to claim 15, further comprising:

18. The plurality of chiplets are arranged along the first chiplet layer on the first type of substrate, Transferring the first type of substrate having the first chiplet layer to the first plasma chamber in order to perform an auxiliary plasma etching process to remove unwanted material, Transferring the first type of substrate to the bonding chamber or the second bonding chamber, In the bonding chamber or the second bonding chamber, the plurality of chiplets from the second type of substrate, or the plurality of second chiplets from the second substrate of the second type of substrate, are transferred onto the layer of the first chiplets. The method according to claim 15, further comprising:

19. The method according to any one of claims 15 to 18, wherein the first type of substrate and the second type of substrate are processed simultaneously.

20. The method according to any one of claims 15 to 18, wherein a plurality of the first type of substrates and a plurality of the second type of substrates are processed simultaneously in the multi-chamber processing tool.

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