Light-emitting element

Abstract

The present invention provides a light-emitting element with reduced bias in the light emission intensity distribution. [Solution] The light-emitting element includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and comprises an n-side electrode, a p-side electrode connected to the p-type semiconductor layer, an n-side external electrode on the n-side electrode, a first p-side external electrode located on the p-side electrode in a top view toward the first side of the n-side external electrode, having a first portion extending in a first direction and a plurality of second portions extending in a second direction perpendicular to the first direction and connected to the first portion, and a second p-side external electrode located toward the first side of the n-side external electrode and adjacent to the first p-side external electrode in the first direction, having a third portion extending in the second direction, the n-side electrode has a first region located between the first p-side external electrode and the second p-side external electrode, the plurality of n-side openings have a plurality of first openings overlapping the first region, and the plurality of first openings are arranged between the first portion and the third portion in the first direction.

Description

Technical Field

[0001] The present disclosure relates to a light-emitting device.

Background Art

[0002] Patent Document 1 discloses a light-emitting device having a comb shape in a top view and including a p-side external electrode connected to a p-type semiconductor layer via a p-side electrode. Since the n-side electrode connected to the n-type semiconductor layer is disposed at a position that does not overlap the p-side external electrode in a top view, it is desired to reduce the deviation in the light emission intensity distribution in a plane parallel to the light emission surface.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] An object of the present disclosure is to provide a light-emitting device with a reduced deviation in light emission intensity distribution.

Means for Solving the Problems

[0005] A light-emitting element according to one embodiment of the present disclosure is a semiconductor structure comprising an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer, the semiconductor structure having a first side extending in a first direction in a top view, wherein the n-type semiconductor layer has a plurality of connection surfaces exposed from the active layer and the p-type semiconductor layer; an insulating layer disposed on the semiconductor structure, the insulating layer having a plurality of n-side openings located above the plurality of connection surfaces and exposing the plurality of connection surfaces, and a p-side opening located above the p-type semiconductor layer; an n-side electrode disposed on the insulating layer and electrically connected to the plurality of connection surfaces through the plurality of n-side openings; a p-side electrode disposed on the insulating layer and electrically connected to the p-type semiconductor layer through the p-side opening; an n-side external electrode disposed on the n-side electrode; and a component disposed on the p-side electrode, which in a top view is located above the n-side external electrode. The first p-side external electrode is located on the first side and has a first portion extending in the first direction in a top view and a plurality of second portions extending in a second direction perpendicular to the first direction in a top view and connected to the first portion. The second p-side external electrode is disposed on the p-side electrode and is located on the first side of the n-side external electrode in a top view and is adjacent to the first p-side external electrode in the first direction and has a third portion extending in the second direction in a top view. In a top view, the n-side electrode has a first region located between the first p-side external electrode and the second p-side external electrode, and the plurality of n-side openings have a plurality of first openings overlapping the first region in a top view, and in a top view, at least one of the plurality of first openings is located between the first portion and the third portion in the first direction. [Effects of the Invention]

[0006] According to one embodiment of the present disclosure, a light-emitting element with reduced bias in the light emission intensity distribution can be provided. [Brief explanation of the drawing]

[0007] [Figure 1]This is a schematic top view showing a light-emitting element according to an embodiment. [Figure 2] This is a schematic cross-sectional view showing the light-emitting element according to the embodiment along line II-II in Figure 1. [Figure 3] This is a schematic top view showing a part of the light-emitting element according to the embodiment in region III of Figure 1. [Figure 4] This is a schematic top view showing a light-emitting element related to a reference example. [Figure 5] This is a schematic top view showing the light-emitting element according to the first modified example. [Figure 6] This is a schematic top view showing the light-emitting element according to the modified example 2. [Figure 7] This is a schematic top view showing the light-emitting element according to the modified example 3. [Figure 8] This is a schematic top view showing the light-emitting element according to the modified example 4. [Figure 9] This is a schematic top view showing the light-emitting element according to Modification 5. [Figure 10] This is a schematic top view showing the light-emitting element according to the modified example 6. [Figure 11] This is a schematic top view showing the light-emitting element according to the modified example 7. [Figure 12] This is a schematic top view showing the light-emitting element according to the modified example 8. [Modes for carrying out the invention]

[0008] The light-emitting element according to the embodiment of this disclosure will be described in detail below with reference to the drawings. However, the embodiments shown below are illustrative examples of light-emitting elements that embody the technical concept of the embodiments and are not limited thereto. Furthermore, the dimensions, materials, shapes, relative arrangements, etc. of the components described in the embodiments are not intended to limit the scope of this disclosure to those components alone, unless otherwise specified, but are merely illustrative examples. Note that the size, positional relationships, etc. of the members shown in each drawing may be exaggerated for clarity of explanation. In addition, in the following description, the same name and reference numerals indicate the same or similar members, and detailed explanations will be omitted as appropriate. In some cases, end view diagrams showing only the cross-section will be used as cross-sectional views.

[0009] In the diagrams shown below, directions may be indicated by the X, Y, and Z axes. The X, Y, and Z axes are mutually orthogonal. In this specification, the direction along the Y axis is referred to as the "first direction Y". The direction along the X axis is referred to as the "second direction X". The direction along the Z axis is referred to as the "third direction Z". In the first direction Y, the direction the arrow is pointing is denoted as the +Y direction or +Y side, and the opposite direction of the +Y direction is denoted as the -Y direction or -Y side. In the second direction X, the direction the arrow is pointing is referred to as the +X direction or +X side, and the opposite direction of the +X direction is denoted as the -X direction or -X side. In the third direction Z, the direction the arrow is pointing is referred to as the +Z direction or +Z side, and the opposite direction of the +Z direction is denoted as the -Z direction or -Z side. Furthermore, in the third direction Z, the surface of the object viewed from the +Z direction or +Z side is referred to as the "top surface", and the surface of the object viewed from the -Z direction or -Z side is referred to as the "bottom surface". Furthermore, in this specification, "top view" means viewing the object from the +Z direction or the +Z side of the third direction Z. However, these are for illustrative purposes only and do not restrict the orientation when using the light-emitting element. The orientation of the light-emitting element is arbitrary. In the embodiments shown below, "along the first direction Y, the second direction X, and the third direction Z" includes the object having an inclination within ±10° with respect to these directions. Also, in embodiments, orthogonality may include an error of ±10° or less from 90°.

[0010] Furthermore, expressions such as "in the first direction Y" and "in the second direction X" are sometimes used to indicate the positional relationships of multiple objects. Here, "in the first direction Y" refers to the positional relationship of multiple objects as viewed from the second direction X, which is perpendicular to the first direction Y. For example, "In the first direction Y, object A is separated from object B" means that when objects A and B are viewed from the second direction X, which is perpendicular to the first direction Y, object A is located at a distance from object B. Also, "In the first direction Y, object A overlaps with object B" means that when objects A and B are viewed from the second direction X, which is perpendicular to the first direction Y, objects A and B appear to overlap each other. Furthermore, "in the second direction X" refers to the positional relationship of multiple objects as viewed from the first direction Y, which is perpendicular to the second direction X. For example, "In the second direction X, object A is separated from object B" means that when viewing object A and object B from the first direction Y which is perpendicular to the second direction X, object A is located at a distance from object B. Also, "In the second direction X, object A overlaps with object B" means that when viewing object A and object B from the first direction Y which is perpendicular to the second direction X, object A and object B appear to overlap each other.

[0011] In this disclosure, unless otherwise specified, polygons such as rectangles shall be referred to as polygons, including shapes with rounded corners, chamfers, bevels, or other processing applied to their corners. Furthermore, shapes with processing applied not only to the corners (ends of the sides) but also to the middle parts of the sides shall also be referred to as polygons. In other words, shapes that retain a polygonal base but have undergone partial processing shall be included in the interpretation of "polygon" as described in this disclosure.

[0012] Furthermore, the same applies to terms describing specific shapes, not just polygons, but also trapezoids, circles, and other shapes with concave or convex forms. The same also applies to terms relating to each side that forms such a shape. In other words, even if a side has been modified at a corner or in the middle, the interpretation of "side" includes the modified portion.

[0013] In addition, "cover" or "coat" does not refer only to the case of direct contact, but also includes the case of indirectly covering, for example, through other members. Further, "dispose" does not refer only to the case of direct contact, but also includes the case of indirectly disposing, for example, through other members.

[0014] [Embodiment] Referring to FIGS. 1 to 4, an example of the overall configuration of the light-emitting element 1 according to the embodiment will be described. FIG. 1 is a top view schematically showing the light-emitting element 1 according to the embodiment. FIG. 2 is a cross-sectional view schematically showing the light-emitting element 1 according to the embodiment taken along line II-II of FIG. 1. FIG. 3 is a partial top view schematically showing a part of the light-emitting element 1 according to the embodiment in region III of FIG. 1. FIG. 4 is a top view schematically showing the light-emitting element 1R according to the reference example.

[0015] As shown in FIGS. 1 and 2, the light-emitting element 1 includes a semiconductor structure 10, an insulating layer 20, an n-side electrode 30, a p-side electrode 40, an n-side external electrode 50, a first p-side external electrode 60, and a second p-side external electrode 70. When the light-emitting element 1 is disposed on a support substrate having a plurality of wiring layers, the upper surfaces of the n-side external electrode 50, the first p-side external electrode 60, and the second p-side external electrode 70 are respectively joined to the plurality of wiring layers of the support substrate through a conductive joining member such as solder. Each of the plurality of wiring layers of the support substrate is electrically connected to, for example, an external power supply circuit. As shown in FIG. 1, the shape of the light-emitting element 1 in a top view is rectangular. When the shape of the light-emitting element 1 in a top view is rectangular, the length of one side of the rectangle is, for example, 50 μm or more and 2000 μm or less.

[0016] The light-emitting element 1 may include other components such as a first insulating film 27, a second insulating film 29, a first conductive member 45, a second conductive member 55, a third conductive member 65, a fourth conductive member 75, and a substrate 80. Further, the light-emitting element 1 may include a wavelength conversion member disposed on the lower surface of the substrate 80. For convenience of explanation, the illustration of the wavelength conversion member is omitted in FIGS. 1 and 2.

[0017] [Semiconductor structure 10] The semiconductor structure 10 has an n-type semiconductor layer 11, an active layer 12, and a p-type semiconductor layer 13. As shown in Figure 2, the n-type semiconductor layer 11, the active layer 12, and the p-type semiconductor layer 13 are stacked in this order in the third direction Z. The n-type semiconductor layer 11 contains n-type impurities. However, the n-type semiconductor layer 11 may also contain an undoped layer in which n-type impurities are not intentionally added. The p-type semiconductor layer 13 contains p-type impurities. However, the p-type semiconductor layer 13 may also contain an undoped layer in which p-type impurities are not intentionally added. The active layer 12 may have a single quantum well (SQW) structure or a multi-quantum well (MQW) structure containing multiple well layers.

[0018] Each of the n-type semiconductor layer 11, the active layer 12, and the p-type semiconductor layer 13 is composed of, for example, a nitride semiconductor. Nitride semiconductors are made of In x Al y Ga 1-x-y The semiconductor comprises all compositions in which the composition ratios x and y are varied within their respective ranges in the chemical formula N(0≦x, 0≦y, x+y≦1). The emission peak wavelength of the light emitted by the active layer 12 is preferably 400 nm to 530 nm, more preferably 420 nm to 490 nm, and even more preferably 440 nm to 460 nm. The active layer 12 emits, for example, blue light. However, the emission peak wavelength of the light emitted by the active layer 12 is not limited to these. The active layer 12 may emit visible light of a different color than blue light, or it may emit ultraviolet light.

[0019] As shown in Figure 1, the semiconductor structure 10 has a first side 10a extending in a first direction Y when viewed from above. The semiconductor structure 10 also has second sides 10b and 10c extending in a second direction X when viewed from above. In the semiconductor structure 10, each of the second sides 10b and 10c is connected to the first side 10a. In the example shown in Figure 1, the second side 10b is connected to the +Y end of the first side 10a. The second side 10c is connected to the -Y end of the first side 10a. The semiconductor structure 10 further has a third side 10d extending in a first direction Y when viewed from above. The third side 10d is located on the opposite side of the first side 10a when viewed from above. In the semiconductor structure 10, the third side 10d is connected to each of the second sides 10b and 10c. In the example shown in Figure 1, the third side 10d is connected to the +X end of each of the second sides 10b and 10c.

[0020] In a top view, the outer edge of the semiconductor structure 10 is composed of the first side 10a, the second side 10b, 10c, and the third side 10d. In the examples shown in Figures 1 and 2, the outer edge of the semiconductor structure 10 coincides with the outer edge of the n-type semiconductor layer 11. In a top view, the outer edges of the active layer 12 and the p-type semiconductor layer 13 are located inside the outer edge of the n-type semiconductor layer 11. That is, in a top view, the outer edges of the active layer 12 and the p-type semiconductor layer 13 are located inside the outer edge of the semiconductor structure 10.

[0021] The n-type semiconductor layer 11 has a light extraction surface 111. As shown in Figure 2, the light extraction surface 111 is located on the side of the n-type semiconductor layer 11 facing the substrate 80. Light emitted from the active layer 12 passes through the n-type semiconductor layer 11, for example, and is mainly emitted from the light extraction surface 111. The light extraction surface 111 is an example of the light-emitting surface of the light-emitting element 1. In this specification, "in-plane" means the in-plane parallel to the light-emitting surface of the light-emitting element 1.

[0022] The n-type semiconductor layer 11 has a plurality of connection surfaces 112. As shown in FIG. 2, in the third direction Z, the plurality of connection surfaces 112 are located on the side opposite to the light extraction surface 111. In the n-type semiconductor layer 11, each of the plurality of connection surfaces 112 is not covered by the active layer 12 and the p-type semiconductor layer 13. That is, in the n-type semiconductor layer 11, each of the plurality of connection surfaces 112 is exposed from the active layer 12 and the p-type semiconductor layer 13.

[0023] <n-side electrode 30> The n-side electrode 30 is disposed on the insulating layer 20. The n-side electrode 30 is electrically connected to the plurality of connection surfaces 112 in the n-type semiconductor layer 11 through the plurality of n-side openings 21 provided in the insulating layer 20. That is, the n-side electrode 30 is electrically connected to the n-type semiconductor layer 11 through the plurality of n-side openings 21. A part of the region of the n-side electrode 30 (the region indicated by reference numeral 31 in FIG. 1) is located between the first p-side external electrode 60 and the second p-side external electrode 70 in a top view. The region of the n-side electrode 30 located between the first p-side external electrode 60 and the second p-side external electrode 70 in a top view is hereinafter referred to as the "first region 31". Examples of the material constituting the n-side electrode 30 include titanium, gold, aluminum, copper, silicon, platinum, silver, and nickel. However, the material constituting the n-side electrode 30 is not limited thereto. The diameter of the n-side opening 21 is, for example, 1 μm or more and 50 μm or less, preferably 10 μm or more and 20 μm or less. The diameters of the plurality of n-side openings 21 may all be the same or different.

[0024] <p-side electrode 40, first conductive member 45> The p-side electrode 40 is disposed on the insulating layer 20. The p-side electrode 40 is electrically connected to the p-type semiconductor layer 13 through the p-side opening 22 provided in the insulating layer 20. The material constituting the p-side electrode 40 may be the same as the material constituting the n-side electrode 30.

[0025] In the example shown in Figure 2, the first conductive member 45 is positioned between the p-side electrode 40 and the p-type semiconductor layer 13 in the third direction Z. That is, the p-side electrode 40 is electrically connected to the p-type semiconductor layer 13 via the first conductive member 45. However, the p-side electrode 40 may be directly connected to the p-type semiconductor layer 13 without going through the first conductive member 45.

[0026] The first conductive member 45 is preferably made of a metal material with excellent light reflectivity, such as silver or aluminum. By making the first conductive member 45 of a metal material with excellent light reflectivity, the light emitted by the active layer 12 of the semiconductor structure 10 that reaches the first conductive member 45 can be reflected towards the light extraction surface 111 side of the n-type semiconductor layer 11. This improves the light extraction efficiency of the light-emitting element 1. The first conductive member 45 preferably has a reflectivity of 60% or more with respect to the emission peak wavelength of the light emitted by the active layer 12, and more preferably has a reflectivity of 70% or more with respect to the emission peak wavelength of the light emitted by the active layer 12.

[0027] <First insulating film 27 and second insulating film 29> As shown in Figure 2, the first insulating film 27 covers the top surface and the side surface of the first conductive member 45. By covering the top surface and the side surface of the first conductive member 45 with the first insulating film 27, the possibility of moisture entering the first conductive member 45 from the outside can be reduced. This reduces migration of the first conductive member 45.

[0028] Examples of materials constituting the first insulating film 27 include silicon oxide and silicon nitride. However, the materials constituting the first insulating film 27 are not limited to these. The first insulating film 27 is disposed between the first conductive member 45 and the insulating layer 20 in the third direction Z. However, the first insulating film 27 does not have to be disposed between the first conductive member 45 and the insulating layer 20. That is, the insulating layer 20, rather than the first insulating film 27, may cover the upper surface and the side surfaces of the first conductive member 45.

[0029] As shown in FIG. 2, the second insulating film 29 covers the n-side electrode 30, the p-side electrode 40, and the insulating layer 20. The material constituting the second insulating film 29 may be the same as the material constituting the first insulating film 27. In a top view, the second insulating film 29 does not overlap with the n-side external electrode 50, the first p-side external electrode 60, and the second p-side external electrode 70, respectively.

[0030] <n-side external electrode 50> The n-side external electrode 50 is disposed on the n-side electrode 30. In a top view, the n-side external electrode 50 is located on the third side 10d side of the semiconductor structure 10 from the first p-side external electrode 60. Also, in a top view, the n-side external electrode 50 is located on the third side 10d side of the semiconductor structure 10 from the second p-side external electrode 70. In a top view, the n-side external electrode 50 is located between the first p-side external electrode 60 or the second p-side external electrode 70 and the third side 10d. In the example shown in FIG. 2, the n-side external electrode 50 is electrically connected to the n-side electrode 30 via the second conductive member 55. The second conductive member 55 is, for example, a seed layer when forming the n-side external electrode 50 by an electrolytic plating method. However, the n-side external electrode 50 may be directly connected to the n-side electrode 30 without passing through the second conductive member 55. As an example of the material constituting the n-side external electrode 50, copper can be mentioned. However, the material constituting the n-side external electrode 50 is not limited thereto. Examples of the material constituting the second conductive member 55 include titanium, nickel, and gold. However, the material constituting the second conductive member 55 is not limited to these.

[0031] <first p-side external electrode 60> The first p-side external electrode 60 is positioned on the p-side electrode 40. Furthermore, in a top view, the first p-side external electrode 60 is located on the first side 10a of the semiconductor structure 10, relative to the n-side external electrode 50. In a top view, the first p-side external electrode 60 is located between the n-side external electrode 50 and the first side 10a. In the example shown in Figure 2, the first p-side external electrode 60 is electrically connected to the p-side electrode 40 via a third conductive member 65. The third conductive member 65 is, for example, a seed layer when forming the first p-side external electrode 60 by electroplating. However, the first p-side external electrode 60 may be directly connected to the p-side electrode 40 without the third conductive member 65. The material constituting the first p-side external electrode 60 may be the same as the material constituting the n-side external electrode 50. Also, the material constituting the third conductive member 65 may be the same as the material constituting the second conductive member 55.

[0032] As shown in Figure 1, multiple first p-side external electrodes 60 may be arranged spaced apart in the first direction Y. In the example shown in Figure 1, two first p-side external electrodes 60 are arranged spaced apart in the first direction Y. However, the number of first p-side external electrodes 60 may be just one.

[0033] As shown in Figure 1, in a top view, it is preferable that the two first p-side external electrodes 60 are arranged symmetrically with respect to the second p-side external electrode 70. By arranging the two first p-side external electrodes 60 symmetrically with respect to the second p-side external electrode 70 in a top view, it is possible to avoid the first p-side external electrodes 60 being biased towards a specific region in the plane. This reduces the bias in the emission intensity distribution in the plane.

[0034] The first p-side external electrode 60 has a first portion 61 and a plurality of second portions 62. In the example shown in Figure 1, the first p-side external electrode 60 has one first portion 61 and two second portions 62. However, the number of first portions 61 may be multiple. Also, the number of second portions 62 may be three or more.

[0035] The first portion 61 extends in the first direction Y when viewed from above. In the example shown in Figure 1, the first portion 61 overlaps with the edge 60p1 closest to the first side 10a of the first p-side external electrode 60 in the second direction X. That is, the edge 60p1 closest to the first side 10a of the first p-side external electrode 60 includes the outer edge of the first portion 61. As a result, the length of the edge 60p1 closest to the first side 10a of the first p-side external electrode 60 in the first direction Y is increased by the length (width) of the first portion 61 in the first direction Y. Consequently, when the light-emitting element 1 is placed on the support substrate, the first p-side external electrode 60 can be accurately and easily positioned to overlap with the wiring layer of the support substrate. That is, the bonding between the light-emitting element 1 and the support substrate can be improved. The width of the first portion 61 in the first direction Y is, for example, 20 μm or more and 500 μm or less, preferably 100 μm or more and 300 μm or less. The width of the first portion 61 in the second direction X is 10 μm or more and 300 μm or less, preferably 50 μm or more and 200 μm or less.

[0036] Each of the multiple second parts 62 extends in the second direction X when viewed from above. Each of the multiple second parts 62 is connected to the first part 61. In the example shown in Figure 1, the -X end of each second part 62 is connected to the first part 61. However, each second part 62 may be connected to the first part 61 at a position other than the -X end of the second part 62.

[0037] The width of each second portion 62 in the first direction Y may be the same or different from each other. Similarly, the width of each second portion 62 in the second direction X may be the same or different from each other. The width of the second portion 62 in the first direction Y is, for example, 10 μm or more and 500 μm or less, preferably 30 μm or more and 300 μm or less. The width of the second portion 62 in the second direction X is, for example, 20 μm or more and 1000 μm or less, preferably 200 μm or more and 800 μm or less.

[0038] <2nd p side external electrode 70> The second p-side external electrode 70 is positioned on the p-side electrode 40. In a top view, the second p-side external electrode 70 is located on the first side 10a side of the n-side external electrode 50. In a top view, the second p-side external electrode 70 is located between the n-side external electrode 50 and the first side 10a. The second p-side external electrode 70 is positioned adjacent to the first p-side external electrode 60. In a top view, the first region 31 of the n-side electrode 30 is located between the first p-side external electrode 60 and the second p-side external electrode 70. The first p-side external electrode 60 and the second p-side external electrode 70 are separated in the first direction Y.

[0039] In the example shown in Figure 2, the second p-side external electrode 70 is electrically connected to the p-side electrode 40 via the fourth conductive member 75. However, the second p-side external electrode 70 may be directly connected to the p-side electrode 40 without the fourth conductive member 75. The material constituting the second p-side external electrode 70 may be the same as the material constituting the n-side external electrode 50 and the first p-side external electrode 60. Also, the material constituting the fourth conductive member 75 may be the same as the material constituting the second conductive member 55 and the third conductive member 65.

[0040] In the example shown in Figure 2, there is one second p-side external electrode 70. However, there may be multiple second p-side external electrodes 70. In the example shown in Figure 1, the second p-side external electrode 70 is positioned between multiple first p-side external electrodes 60 in a top view. However, the position of the second p-side external electrode 70 is not limited to this.

[0041] The second p-side external electrode 70 has a third portion 71 extending in a second direction X when viewed from above. The third portion 71 extends parallel to the second portion 62 of the first p-side external electrode 60. The width of the third portion 71 in the first direction Y may be the same as or different from the width of the second portion 62 in the first direction Y. The width of the third portion 71 in the first direction Y is, for example, 10 μm or more and 500 μm or less, preferably 30 μm or more and 300 μm or less. The width of the third portion 71 in the second direction X is, for example, 20 μm or more and 1000 μm or less, preferably 200 μm or more and 800 μm or less. The width of the third portion 71 in the second direction X may be the same as or different from the width of the second portion 62 in the second direction X.

[0042] <Insulating layer 20> The insulating layer 20 is placed on the semiconductor structure 10. A portion of the insulating layer 20 is located between the p-type semiconductor layer 13 and the n-side electrode 30, insulating the p-type semiconductor layer 13 from the n-side electrode 30. A portion of the insulating layer 20 is located between the n-type semiconductor layer 11 and the p-side electrode 40, insulating the n-type semiconductor layer 11 from the p-side electrode 40. The material constituting the insulating layer 20 may be the same as the material constituting the first insulating film 27 and the second insulating film 29.

[0043] The insulating layer 20 has a plurality of n-side openings 21. The plurality of n-side openings 21 are located on a plurality of connection surfaces 112 in the n-type semiconductor layer 11. Each of the plurality of n-side openings 21 exposes one of the plurality of connection surfaces 112. In a top view, each of the plurality of n-side openings 21 overlaps with a plurality of connection points between the n-type semiconductor layer 11 and the n-side electrode 30.

[0044] The multiple n-side openings 21 each have multiple first openings 21a. As shown in Figure 1, each of the multiple first openings 21a is positioned to overlap with the first region 31 of the n-side electrode 30 in a top view. By positioning the multiple first openings 21a to overlap with the first region 31 in a top view, the number of connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be increased. In addition, the decrease in the luminescence intensity in the first region 31 compared to other regions can be reduced. This reduces the bias in the in-plane luminescence intensity distribution.

[0045] As shown in Figures 2 and 3, at least one of the multiple first openings 21a (hereinafter referred to as "first opening 21a1") is located between the first portion 61 and the third portion 71 in the first direction Y. However, as shown in the reference example in Figure 4, if the first p-side external electrode 60 has an extended region 60e that extends to the second p-side external electrode 70, the contact area between the first p-side external electrode 60 and the wiring layer of the support substrate can be further increased. Also, the length of the edge 60p1 closest to the first side 10a of the first p-side external electrode 60 in the first direction Y can be further increased by the length of the extended region 60e in the first direction Y. Therefore, the light-emitting element 1R according to the reference example has a suitable configuration in terms of heat dissipation efficiency and bonding with the support substrate. However, if the first p-side external electrode 60 has an extended region 60e, the n-side opening 21 cannot be located in the region overlapping with the extended region 60e. In other words, the area in which the connection point between the n-side electrode 30 and the n-type semiconductor layer 11 can be placed may be limited. This may lead to a greater bias in the in-plane emission intensity distribution.

[0046] In this embodiment, the first p-side external electrode 60 does not have a stretched region 60e, and the first opening 21a1 is located in the region where the stretched region 60e was located in the reference example. This allows multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 to be arranged over a wide area in the plane. As a result, the bias in the in-plane emission intensity distribution can be reduced.

[0047] Furthermore, the first p-side external electrode 60 has a first portion 61 extending in the first direction Y and a plurality of second portions 62 extending in the second direction X. In addition, the second p-side external electrode 70 has a third portion 71 extending in the second direction X. Therefore, even if the first p-side external electrode 60 does not have an extended region 60e, the contact area between the first p-side external electrode 60 and the wiring layer of the support substrate, and the contact area between the second p-side external electrode 70 and the wiring layer of the support substrate are sufficiently secured. This reduces the possibility of impaired heat dissipation efficiency and bonding with the support substrate.

[0048] In the example shown in Figure 1, one first opening 21a (first opening 21a1) is located in the region where the extended region 60e is located in the reference example.

[0049] As shown in Figure 3, it is preferable that the first opening 21a1 is positioned in the second direction X at a location that overlaps with the outer edge 31a on the first side 10a side of the first region 31, or in the vicinity of the outer edge 31a on the first side 10a side of the first region 31. That is, it is preferable that at least one of the connection points between the n-side electrode 30 and the n-type semiconductor layer 11 is positioned in the first region 31 closer to the first side 10a than the n-side external electrode 50. By positioning at least one of the connection points between the n-side electrode 30 and the n-type semiconductor layer 11 in the first region 31 closer to the first side 10a than the n-side external electrode 50, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wider area in the plane. This reduces the bias in the in-plane emission intensity distribution. Here, the outer edge 31a on the first side 10a side of the first region 31 means a virtual straight line connecting the corner 60c of the first p-side external electrode 60 and the corner 70c of the second p-side external electrode 70, which are arranged to sandwich the first region 31, in a top view. Furthermore, in this specification, "the vicinity of the outer edge 31a on the first side 10a side of the first region 31" means the range in which the distance L1 in the second direction X between the first opening 21a1 and the outer edge 31a on the first side 10a side of the first region 31 is 10% or less of the width W1 of the first region 31 in the second direction X, as shown in Figure 3.

[0050] The multiple n-side openings 21 further include a second opening 21b, a third opening 21c, a fourth opening 21d, a fifth opening 21e, a sixth opening 21f, a seventh opening 21g, and an eighth opening 21h. Furthermore, the multiple n-side openings 21 may also include other openings.

[0051] As shown in Figure 1, the second opening 21b is located between a plurality of second portions 62 of the first p-side external electrode 60 in a top view. It is preferable that there be multiple second openings 21b; however, there may be only one second opening 21b.

[0052] The third opening 21c is located between the first side 10a of the semiconductor structure 10 and the first p-side external electrode 60 when viewed from above. It is preferable that there be multiple third openings 21c; however, there may be only one third opening 21c.

[0053] The fourth opening 21d is located between the first side 10a of the semiconductor structure 10 and the second p-side external electrode 70 when viewed from above. It is preferable that there be multiple fourth openings 21d; however, there may be only one fourth opening 21d.

[0054] The fifth opening 21e is located, in a top view, between the n-side external electrode 50 and the first p-side external electrode 60, and between the n-side external electrode 50 and the second p-side external electrode 70, at least one of these locations. It is preferable that there be multiple fifth openings 21e; ​​however, there may be only one fifth opening 21e.

[0055] The sixth opening 21f is located, in a top view, between the second side 10b of the semiconductor structure 10 and the p-side external electrode of the first p-side external electrode 60 and the second p-side external electrode 70, which is located on the second side 10b. In the example shown in Figure 1, the sixth opening 21f is located, in a top view, between the second side 10b and the first p-side external electrode 60 on the +Y side. It is preferable that there be multiple sixth openings 21f. However, there may be only one sixth opening 21f.

[0056] The seventh opening 21g is located, in a top view, between the second side 10c of the semiconductor structure 10 and the p-side external electrode of the first p-side external electrode 60 and the second p-side external electrode 70 located on the second side 10c. In the example shown in Figure 1, the seventh opening 21g is located, in a top view, between the second side 10c and the first p-side external electrode 60 on the -Y side. It is preferable that there be multiple seventh openings 21g. However, there may be only one seventh opening 21g.

[0057] The eighth opening 21h overlaps with the n-side external electrode 50 in a top view. It is preferable that there be multiple eighth openings 21h.

[0058] Since multiple n-side openings 21 further have these openings, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wide area in the plane. This reduces the bias in the in-plane emission intensity distribution.

[0059] As shown in Figure 2, the insulating layer 20 further has a p-side opening 22 located above the p-type semiconductor layer 13. The p-side opening 22 exposes the first conductive member 45. The insulating layer 20 has a plurality of p-side openings 22. Some of the plurality of p-side openings 22 overlap with the first p-side external electrode 60 in a top view. Other parts of the plurality of p-side openings 22 overlap with the second p-side external electrode 70 in a top view. Some of the p-side electrode 40 is located inside the p-side opening 22 in a top view. Some of the p-side electrode 40 located inside the p-side opening 22 in a top view is electrically connected to the p-type semiconductor layer 13 via the first conductive member 45.

[0060] <Substrate 80> As shown in Figure 2, the substrate 80 supports the semiconductor structure 10. The upper surface of the substrate 80 is connected to the lower surface of the semiconductor structure 10. Examples of materials constituting the substrate 80 include insulating materials such as sapphire, spinel, and glass, and semiconductor materials such as aluminum nitride, gallium nitride, silicon carbide, and silicon. However, the materials constituting the substrate 80 are not limited to these.

[0061] [Example 1] Next, with reference to Figure 5, the light-emitting element 1A according to Modification 1 of the embodiment will be described. Figure 5 is a schematic top view showing the light-emitting element 1A according to Modification 1. In Modification 1, the same reference numerals are used for components that are the same as in the embodiment, and their descriptions are omitted as appropriate.

[0062] In Modification 1, the width of the second portion 62 of the first p-side external electrode 60 in the first direction Y is smaller than the width of the second portion 62 in the first direction Y in the embodiment. This makes it possible to secure a region between the multiple first p-side external electrodes 60 in a top view without increasing the length of the first side 10a of the semiconductor structure 10. As a result, the number of second p-side external electrodes 70 positioned between the multiple first p-side external electrodes 60 in a top view can be increased. In the example shown in Figure 5, three second p-side external electrodes 70 are positioned between the multiple first p-side external electrodes 60 in a top view. However, the number of second p-side external electrodes 70 is not limited to this.

[0063] As shown in Figure 5, in Modification 1, the width of the third portion 71 of the second p-side external electrode 70 in the first direction Y is smaller than the width of the third portion 71 in the first direction Y in the embodiment. This makes it possible to increase the number of second p-side external electrodes 70 that can be placed between multiple first p-side external electrodes 60 in a top view. That is, in a top view, the region between the first p-side external electrode 60 and the second p-side external electrode 70, and the region between multiple second p-side external electrodes 70 can be increased. As a result, the number of n-side openings 21 including the first opening 21a can be increased. Therefore, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wider area in the plane. From these points, the bias in the in-plane emission intensity distribution can be reduced.

[0064] [Differentiation 2] Next, with reference to Figure 6, the light-emitting element 1B according to Modification 2 of the embodiment will be described. Figure 6 is a schematic top view showing the light-emitting element 1B according to Modification 2. In Modification 2, the same reference numerals are used for components that are the same as those in Embodiment and Modification 1, and their descriptions are omitted as appropriate.

[0065] In Modification 2, the first portion 61 of the first p-side external electrode 60 is separated in the second direction X from the edge 60p1 closest to the first side 10a of the first p-side external electrode 60 and from the edge 60p2 closest to the n-side external electrode 50 of the first p-side external electrode 60. In other words, in Modification 2, compared to the embodiment, the position of the first portion 61 is closer to the edge 60p2 closest to the n-side external electrode 50 of the first p-side external electrode 60. Here, a part of the first p-side external electrode 60 (the region corresponding to the second portion 62) is closer to the n-side external electrode 50 than the other parts of the first p-side external electrode 60. Therefore, current tends to concentrate between a portion of the first p-side external electrode 60 that is close to the n-side external electrode 50 and the n-side external electrode 50. When the active layer 12 emits light, the temperature tends to rise in the region of the first p-side external electrode 60 that is close to the n-side external electrode 50. In other words, the temperature of the edge 60p2 side of the first p-side external electrode 60 that is closest to the n-side external electrode 50 becomes relatively higher. By moving the position of the first portion 61 closer to the edge 60p2 side of the first p-side external electrode 60 that is closest to the n-side external electrode 50, the contact area between the relatively high-temperature region of the first p-side external electrode 60 and the wiring layer of the support substrate can be increased. This makes it possible to further improve the heat dissipation efficiency of the light-emitting element 1.

[0066] [Difference 3] Next, with reference to Figure 7, the light-emitting element 1C according to the modified embodiment 3 will be described. Figure 7 is a schematic top view showing the light-emitting element 1C according to the modified embodiment 3. In the modified embodiment 3, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0067] In the third modified example, the first portion 61 of the first p-side external electrode 60 overlaps with the edge 60p2 of the first p-side external electrode 60 that is closest to the n-side external electrode 50 in the second direction X. As described above, the temperature of the first p-side external electrode 60 is relatively higher on the edge 60p2 side that is closest to the n-side external electrode 50. By having the first portion 61 overlap with the edge 60p2 of the first p-side external electrode 60 that is closest to the n-side external electrode 50 in the second direction X, the contact area between the relatively high-temperature region of the first p-side external electrode 60 and the wiring layer of the support substrate can be increased. This makes it possible to further improve the heat dissipation efficiency of the light-emitting element 1.

[0068] [Differentiation Example 4] Next, with reference to Figure 8, the light-emitting element 1D according to the modified embodiment 4 will be described. Figure 8 is a schematic top view showing the light-emitting element 1D according to the modified embodiment 4. In the modified embodiment 4, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0069] In Modification 4, the first p-side external electrode 60 has at least three second portions 62 and at least two first portions 61. As shown in Figure 8, each of the at least two first portions 61 connects two adjacent second portions 62. That is, in Modification 4, the number of second portions 62 in the first p-side external electrode 60 is greater than the number of second portions 62 in the embodiment. Therefore, the area in which the second opening 21b can be placed is increased compared to the embodiment. This makes it possible to increase the number of second openings 21b. As a result, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wide area in the plane. Because of these factors, the bias in the in-plane light emission intensity distribution can be reduced.

[0070] Furthermore, in Modification 4, there is one first p-side external electrode 60, while there are two (or more) second p-side external electrodes 70. In addition, in Modification 4, one first p-side external electrode 60 is sandwiched between multiple second p-side external electrodes 70, one each positioned on the +Y and -Y sides of the first p-side external electrode 60. That is, a first p-side external electrode 60 having multiple second portions 62 is sandwiched between multiple second p-side external electrodes 70, an equal number of each positioned on the +Y and -Y sides of the first p-side external electrode 60. This allows the first p-side external electrode 60 and the second p-side external electrode 70 to be arranged in a highly symmetrical configuration when viewed from above. As a result, it is possible to suppress the bias in the distribution of light emission intensity within the plane of the first p-side external electrode 60 and the second p-side external electrode 70 in a specific region of the plane.

[0071] As shown in Figure 8, it is preferable that the multiple second portions 62 of the first p-side external electrode 60 are arranged at equal intervals in the first direction Y. By arranging the multiple second portions 62 at equal intervals in the first direction Y, the first p-side external electrode 60 and the second p-side external electrode 70 can be arranged in a more symmetrical configuration when viewed from above. This reduces the bias in the in-plane emission intensity distribution.

[0072] [Difference 5] Next, with reference to Figure 9, the light-emitting element 1E according to the modified embodiment 5 will be described. Figure 9 is a schematic top view showing the light-emitting element 1E according to the modified embodiment 5. In the modified embodiment 5, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0073] In Modification 5, the width of the second portion 62 of the first p-side external electrode 60 in the first direction Y is smaller than the width of the second portion 62 in the first direction Y in Modification 4. Also, in Modification 5, four (or more) second p-side external electrodes 70 are arranged on the +Y side and -Y side of the first p-side external electrode 60, respectively. Furthermore, the width of the third portion 71 of each second p-side external electrode 70 in the first direction Y is smaller than the width of the third portion 71 of the second p-side external electrode 70 in the first direction Y in Modification 4. In other words, in a top view, the area between adjacent first p-side external electrodes 60 and second p-side external electrodes 70, and the area between multiple adjacent second p-side external electrodes 70 can be widened. This increases the area in which the n-side opening 21 can be placed. As a result, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wider area in the plane. These factors make it possible to reduce the bias in the distribution of luminescence intensity within the plane.

[0074] [Modification 6] Next, with reference to Figure 10, the light-emitting element 1F according to the modified embodiment 6 will be described. Figure 10 is a schematic top view showing the light-emitting element 1F according to the modified embodiment 6. In the modified embodiment 6, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0075] In modified example 6, one second p-side external electrode 70 is sandwiched between multiple first p-side external electrodes 60, one each positioned on the +Y and -Y sides of the second p-side external electrode 70. That is, the second p-side external electrode 70 is sandwiched between multiple first p-side external electrodes 60, an equal number of each positioned on the +Y and -Y sides of the second p-side external electrode 70. This allows the first p-side external electrodes 60 and the second p-side external electrodes 70 to be arranged in a highly symmetrical configuration when viewed from above. As a result, it is possible to suppress the bias in the distribution of light emission intensity within the plane of the first p-side external electrodes 60 and the second p-side external electrodes 70 in a specific region of the plane.

[0076] Furthermore, in the modified example 6, the width of the second portion 62 of the first p-side external electrode 60 in the first direction Y is smaller than the width of the second portion 62 in the first direction Y in the embodiment. As a result, the number of second portions 62 can be increased compared to the embodiment without increasing the length of the first side 10a of the semiconductor structure 10. Consequently, the area in which the second opening 21b can be placed can be increased compared to the embodiment. That is, multiple connection points between the n-side electrode 30 and the n-type semiconductor layer 11 can be arranged over a wider area in the plane. From these points, the bias in the in-plane light emission intensity distribution can be reduced.

[0077] Furthermore, in the modified example 6, the width of the third portion 71 of the second p-side external electrode 70 in the first direction Y is smaller than the width of the third portion 71 in the first direction Y in the embodiment. As a result, at least one first p-side external electrode 60 can be placed on each of the +Y and -Y sides of the second p-side external electrode 70 without increasing the length of the first side 10a of the semiconductor structure 10.

[0078] [Difference 7] Next, with reference to Figure 11, the light-emitting element 1G according to the modified embodiment 7 will be described. Figure 11 is a schematic top view showing the light-emitting element 1G according to the modified embodiment 7. In the modified embodiment 7, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0079] In modified example 7, the first p-side external electrode 60 has a plurality of first portions 61. As shown in Figure 11, the plurality of first portions 61 are arranged at different positions in the second direction X. In the example shown in Figure 11, the first first portion 61a is positioned closer to the edge 60p2 closest to the n-side external electrode 50 than to the edge 60p1 closest to the first side 10a of the first p-side external electrode 60. In contrast, the second first portion 61b is positioned closer to the edge 60p1 closest to the first side 10a than to the edge 60p2 closest to the n-side external electrode 50 of the first p-side external electrode 60. These features improve the bonding between the light-emitting element 1 and the support substrate, as well as the heat dissipation efficiency of the light-emitting element 1.

[0080] [Differentiation 8] Next, with reference to Figure 12, the light-emitting element 1H according to the modified embodiment 8 will be described. Figure 12 is a schematic top view showing the light-emitting element 1H according to the modified embodiment 8. In the modified embodiment 8, the same reference numerals are used for components that are the same as those in the embodiment and the modified embodiments described above, and their descriptions are omitted as appropriate.

[0081] In the modified example 8, in the first p-side external electrode 60a located on the +Y side, the width in the first direction Y of the second portion 62 located furthest towards the second side 10b among the multiple second portions 62 is smaller than the width in the first direction Y of the other second portions 62 of the first p-side external electrode 60a. This makes it possible to widen the width in the first direction Y of the region of the n-side electrode 30 located between the second side 10b and the first p-side external electrode 60a when viewed from above. As a result, the current density near the sixth aperture 21f can be increased, and the current density near the third aperture 21c can also be increased, for example. That is, the bias in the in-plane emission intensity distribution can be reduced.

[0082] Furthermore, in the modified example 8, in the first p-side external electrode 60b located on the -Y side, the width in the first direction Y of the second portion 62 located furthest towards the second side 10c among the multiple second portions 62 is smaller than the width in the first direction Y of the other second portions 62 of the first p-side external electrode 60b. As a result, the width in the first direction Y of the region of the n-side electrode 30 located between the second side 10c and the first p-side external electrode 60b can be increased in a top view. Consequently, the current density near the seventh aperture 21g can be increased, and for example, the current density near the fourth aperture 21d can also be increased. In other words, the bias in the in-plane emission intensity distribution can be reduced.

[0083] Although preferred embodiments have been described in detail above, the invention is not limited to the embodiments described above, and various modifications and substitutions can be made to the embodiments described above without departing from the scope of the claims.

[0084] The aspects of this disclosure are, for example, as follows: <Item 1> A semiconductor structure comprising an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer, wherein the semiconductor structure has a first edge extending in a first direction when viewed from above, and the n-type semiconductor layer has a plurality of connection surfaces exposed from the active layer and the p-type semiconductor layer, An insulating layer disposed on the semiconductor structure, the insulating layer having a plurality of n-side openings located above the plurality of connection surfaces and exposing the plurality of connection surfaces, and a p-side opening located above the p-type semiconductor layer, An n-side electrode disposed on the insulating layer and electrically connected to a plurality of connection surfaces through a plurality of n-side openings, A p-side electrode is disposed on the insulating layer and electrically connected to the p-type semiconductor layer through the p-side opening, An n-side external electrode is placed on the n-side electrode, A first p-side external electrode, positioned on the p-side electrode and located on the first side of the n-side external electrode in a top view, having a first portion extending in the first direction in a top view, and a plurality of second portions extending in a second direction perpendicular to the first direction in a top view and connected to the first portion, A second p-side external electrode is positioned on the p-side electrode, located on the first side of the n-side external electrode in a top view, and adjacent to the first p-side external electrode in a first direction, and the second p-side external electrode has a third portion extending in the second direction in a top view, Equipped with, In a top view, the n-side electrode has a first region located between the first p-side external electrode and the second p-side external electrode. The multiple n-side openings have multiple first openings that overlap with the first region in a top view, In a top view, at least one of the plurality of first openings is positioned between the first portion and the third portion in the first direction, and is a light-emitting element. <Item 2> Multiple first p-side external electrodes are arranged spaced apart in the first direction, The second p-side external electrode is positioned between a plurality of the first p-side external electrodes. The light-emitting element described in item 1 above. <Item 3> Multiple second p-side external electrodes are arranged spaced apart in the first direction, The first p-side external electrode is positioned between a plurality of the second p-side external electrodes. The light-emitting element described in item 1 above. <Clause 4> The plurality of n-side openings further have a second opening located between the plurality of second portions of the first p-side external electrode in a top view. A light-emitting element according to any one of the above items <1> to <3>. <Clause 5> The first p-side external electrode has at least three of the second portions and at least two of the first portions, Each of at least two of the aforementioned first parts connects two adjacent aforementioned second parts, The second opening is positioned between adjacent second parts among a plurality of second parts. A light-emitting element according to any one of the above items <1> to <4>. <Item 6> The first portion overlaps with the edge of the first p-side external electrode closest to the first side in the second direction. A light-emitting element according to any one of items 1 to 5 above. <Clause 7> The first portion is spaced apart in the second direction from the edge of the first p-side external electrode closest to the first side and from the edge of the first p-side external electrode closest to the n-side external electrode. A light-emitting element according to any one of items 1 to 5 above. <Item 8> The first portion overlaps with the edge of the first p-side external electrode closest to the n-side external electrode in the second direction, A light-emitting element according to any one of items 1 to 5 above. <Clause 9> The semiconductor structure has a second side that extends in the second direction in a top view and is connected to the first side, The width in the first direction of the second portion located furthest to the second side among the multiple second portions is smaller than the width in the first direction of the other second portions of the first p-side external electrode. A light-emitting element according to any one of items 1 to 8 above. <Clause 10> The plurality of n-side openings further have a third opening located between the first side and the first p-side external electrode in a top view. A light-emitting element according to any one of items 1 to 9 above. <Clause 11> The plurality of n-side openings further have a fourth opening located between the first side and the second p-side external electrode in a top view. The light-emitting element described in item 10 above. [Explanation of Symbols]

[0085] 1,1A,1B,1C,1D,1E,1F,1G,1H Light-emitting element 10 Semiconductor Structures 11 n-type semiconductor layer 112 n-type semiconductor layer connection surface 12 Active layer 13 p-type semiconductor layer 20 Insulating layer 21 n-side opening 21a 1st opening 21b 2nd opening 27 First insulating film 29. Second insulating film 30 n side electrode 31 First area 40 p side electrode 45 First conductive member 50 n side external electrode 55 Second conductive member 60,60a,60b 1st p side external electrode 61,61a,61b Part 1 62 Part 2 65 Third conductive member 70 2nd p side external electrode 71 Part 3 75 Fourth conductive member 80 circuit boards

Claims

1. A semiconductor structure comprising an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a p-type semiconductor layer disposed on the active layer, having a first edge extending in a first direction when viewed from above, wherein the n-type semiconductor layer has a plurality of connection surfaces exposed from the active layer and the p-type semiconductor layer, An insulating layer disposed on the semiconductor structure, the insulating layer having a plurality of n-side openings located above the plurality of connection surfaces and exposing the plurality of connection surfaces, and a p-side opening located above the p-type semiconductor layer, An n-side electrode disposed on the insulating layer and electrically connected to a plurality of connection surfaces through a plurality of n-side openings, A p-side electrode is disposed on the insulating layer and electrically connected to the p-type semiconductor layer through the p-side opening, An external n-side electrode placed on the n-side electrode, A first p-side external electrode, positioned on the p-side electrode and located on the first side of the n-side external electrode in a top view, having a first portion extending in the first direction in a top view, and a plurality of second portions extending in a second direction perpendicular to the first direction in a top view and connected to the first portion, A second p-side external electrode is disposed on the p-side electrode, located on the first side of the n-side external electrode in a top view, and adjacent to the first p-side external electrode in the first direction, and the second p-side external electrode has a third portion extending in the second direction in a top view, Equipped with, In a top view, the n-side electrode has a first region located between the first p-side external electrode and the second p-side external electrode. The multiple n-side openings have multiple first openings that overlap with the first region in a top view, In a top view, at least one of the plurality of first openings is a light-emitting element located between the first portion and the third portion in a first direction.

2. Multiple first p-side external electrodes are arranged spaced apart in the first direction. The second p-side external electrode is positioned between a plurality of the first p-side external electrodes. The light-emitting element according to claim 1.

3. Multiple second p-side external electrodes are arranged spaced apart in the first direction. The first p-side external electrode is positioned between a plurality of the second p-side external electrodes. The light-emitting element according to claim 1.

4. The plurality of n-side openings further have a second opening located between the plurality of second portions of the first p-side external electrode in a top view. The light-emitting element according to claim 1.

5. The first p-side external electrode has at least three of the second portions and at least two of the first portions. Each of at least two of the first parts connects two adjacent second parts, The second opening is positioned between adjacent second parts among a plurality of second parts. The light-emitting element according to claim 4.

6. The first portion overlaps with the edge of the first p-side external electrode closest to the first side in the second direction. The light-emitting element according to claim 1.

7. The first portion is spaced apart in the second direction from the edge of the first p-side external electrode closest to the first side and from the edge of the first p-side external electrode closest to the n-side external electrode. The light-emitting element according to claim 1.

8. The first portion overlaps, in the second direction, with the edge of the first p-side external electrode closest to the n-side external electrode, The light-emitting element according to claim 1.

9. The semiconductor structure has a second side that extends in the second direction in a top view and is connected to the first side, The width in the first direction of the second portion located furthest to the second side among the multiple second portions is smaller than the width in the first direction of the other second portions of the first p-side external electrode. The light-emitting element according to claim 1.

10. The plurality of n-side openings further have a third opening located between the first side and the first p-side external electrode in a top view. The light-emitting element according to claim 1.

11. The plurality of n-side openings further have a fourth opening located between the first side and the second p-side external electrode in a top view. The light-emitting element according to claim 10.

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