High-frequency module

Abstract

This invention provides a high-frequency module that can suppress the degradation of the receiving sensitivity of the FDD during simultaneous communication between TDD and FDD. [Solution] The high-frequency module 1 comprises a semiconductor component 71a connected to a digital control terminal 131, a semiconductor component 72 connected to a digital control terminal 132 and including low-noise amplifiers 21 and 22, a filter 31 having a passband including the TDD band A, a filter 32 connected to the low-noise amplifier 22 and having a passband including the receiving band of the FDD band B, a switch circuit 51 including a common terminal 510 connected to an antenna connection terminal 100 and select terminals 511 and 512 connected to filters 31 and 32 respectively, and a switch circuit 52 including a common terminal 521 connected to filter 31 and select terminals 523 and 524 connected to the power amplifier 11 and low-noise amplifier 21 respectively, wherein the semiconductor component 72 is further connected to the digital control terminal 131 via semiconductor component 71a.

Description

Technical Field

[0001] The present invention relates to a high-frequency module.

Background Art

[0002] In mobile communication devices such as mobile phones, multi-band operation has been progressing, and a high-frequency module capable of simultaneous communication with a plurality of high-frequency signals is required. For example, Patent Document 1 discloses a high-frequency circuit capable of simultaneous communication in a time division duplex (TDD) band and a frequency division duplex (FDD) band.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the above conventional technology, the reception sensitivity of the FDD band may deteriorate due to the transmission signal of the TDD band.

[0005] Therefore, the present invention provides a high-frequency module capable of suppressing deterioration of the reception sensitivity of the FDD band in simultaneous communication of the TDD band and the FDD band.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention comprises a first digital control terminal and a second digital control terminal, an antenna connection terminal, a first semiconductor component connected to the first digital control terminal, a second semiconductor component connected to the second digital control terminal and including a first low-noise amplifier and a second low-noise amplifier, a power amplifier, a first filter having a passband including the TDD band, a second filter connected to the second low-noise amplifier and having a passband including the receiving band of the FDD band capable of simultaneous communication with the TDD band, a first switch circuit including a first common terminal connected to the antenna connection terminal, a first select terminal connected to the first filter, and a second select terminal connected to the second filter, and a second switch circuit including a second common terminal connected to the first filter, a third select terminal connected to the power amplifier, and a fourth select terminal connected to the first low-noise amplifier, wherein the second semiconductor component is further connected to the first digital control terminal via the first semiconductor component.

[0007] A high-frequency module according to one aspect of the present invention comprises a first digital control terminal and a second digital control terminal, an antenna connection terminal, a first semiconductor component connected to the first digital control terminal, a second semiconductor component connected to the second digital control terminal and including a first low-noise amplifier and a second low-noise amplifier, a power amplifier, a first filter connected to the power amplifier and having a passband including the TDD band, a second filter connected to the first low-noise amplifier and having a passband including the TDD band, a third filter connected to the second low-noise amplifier and having a passband including the receiving band of the FDD band capable of simultaneous communication with the TDD band, and a first switch circuit including a first common terminal connected to the antenna connection terminal, a first select terminal connected to the first filter, a second select terminal connected to the second filter, and a third select terminal connected to the third filter, wherein the second semiconductor component is further connected to the first digital control terminal via the first semiconductor component. [Effects of the Invention]

[0008] According to the present invention, it is possible to suppress the degradation of the receiving sensitivity of the FDD band during simultaneous communication of the TDD band and the FDD band. [Brief explanation of the drawing]

[0009] [Figure 1] Figure 1 is a circuit diagram of a communication device according to Embodiment 1. [Figure 2] Figure 2 shows the first connection state of the first mode of the high-frequency module according to Embodiment 1. [Figure 3] Figure 3 shows the second connection state of the first mode of the high-frequency module according to Embodiment 1. [Figure 4] Figure 4 shows the second mode of the high-frequency module according to Embodiment 1. [Figure 5] Figure 5 is a circuit diagram of the communication device according to Embodiment 2. [Figure 6] Figure 6 shows the first connection state of the first mode of the high-frequency module according to Embodiment 2. [Figure 7] Figure 7 shows the second connection state of the first mode of the high-frequency module according to Embodiment 2. [Figure 8] Figure 8 shows the second mode of the high-frequency module according to Embodiment 2. [Modes for carrying out the invention]

[0010] The embodiments of the present invention will be described in detail below with reference to the drawings. Note that the embodiments described below are all general or specific examples. The numerical values, shapes, materials, components, arrangement of components, and connection configurations shown in the following embodiments are examples only and are not intended to limit the present invention.

[0011] The figures are schematic diagrams that have been appropriately emphasized, omitted, or had their proportions adjusted to illustrate the present invention, and are not necessarily strictly accurate representations. Actual shapes, positional relationships, and proportions may differ. In each figure, substantially identical components are denoted by the same reference numerals, and redundant explanations may be omitted or simplified.

[0012] In the following explanation, "connected" includes not only direct connections via terminals and / or wiring conductors, but also electrical connections via other circuit elements. "C is connected between A and B" means that one end of C is connected to A and the other end of C is connected to B, and that C is placed in series in the path between A and B. "Path between A and B" means a path consisting of conductors that electrically connect A to B.

[0013] The "passband of a filter" is defined as the portion of the frequency spectrum transmitted by the filter, specifically the frequency band where the output power is not attenuated by more than 3 dB below the maximum output power. Therefore, the passband of a bandpass filter is defined as the frequency range between two points where the output power is attenuated by 3 dB below the maximum output power.

[0014] "Transmitting band" refers to the frequency band used for transmission in a communication device, while "receiving band" refers to the frequency band used for reception in a communication device. For example, in the FDD band, different frequency bands (uplink band and downlink band) are used for the transmitting and receiving bands. In contrast, in the TDD band, the same frequency band is used for both the transmitting and receiving bands.

[0015] A "terminal" refers to the point where a conductor within a circuit element ends. However, if the impedance of the conductors between circuit elements is sufficiently low, a terminal can be interpreted not only as a single point, but as any point on the conductor between circuit elements, or even the entire conductor.

[0016] "Band B capable of simultaneous communication with Band A" means that signals of Bands A and B can be transmitted simultaneously, received simultaneously, or transmitted and received simultaneously. Simultaneous communication-capable band combinations are predefined by standardization bodies (such as 3GPP (Registered Trademark) (3rd Generation Partnership Project) and IEEE (Institute of Electrical and Electronics Engineers), etc.). Examples of simultaneous communication include CA (Carrier Aggregation), EN-DC (E-UTRAN New Radio - Dual Connectivity), NR-DC (New Radio - Dual Connectivity), or NE-DC (New Radio E-UTRAN - Dual Connectivity), etc.

[0017] (Embodiment 1) Embodiment 1 will be described below.

[0018] [1.1. Circuit Configuration of Communication Device 5] First, the circuit configuration of communication device 5 according to this embodiment will be described with reference to FIG. 1. FIG. 1 is a circuit configuration diagram of communication device 5 according to this embodiment. In FIG. 1, the dashed line in the switch circuit represents the path between terminals that can switch between conduction and non-conduction.

[0019] Note that FIG. 1 represents an exemplary circuit configuration, and communication device 5 can be implemented using any of a variety of circuit implementations and circuit technologies. Therefore, the description of communication device 5 provided below should not be construed restrictively.

[0020] The communication device 5 can be used to provide wireless connectivity. For example, the communication device 5 can be implemented in a UE (Unmanned Environment) on a cellular network (also called a mobile network) such as a mobile phone, smartphone, tablet computer, or wearable device. In another example, by implementing the communication device 5, wireless connectivity can be provided to IoT (Internet of Things) sensor devices, medical / healthcare devices, cars, unmanned aerial vehicles (UAVs) (so-called drones), and automated guided vehicles (AGVs). In yet another example, by implementing the communication device 5, wireless connectivity can also be provided in a wireless access point or wireless hotspot.

[0021] The communication device 5 comprises a high-frequency module 1, an antenna 2, an RFIC (Radio Frequency Integrated Circuit) 3, and a BBIC (Baseband Integrated Circuit) 4.

[0022] The high-frequency module 1 is connected between the antenna 2 and the RFIC 3, and can transmit high-frequency signals between the antenna 2 and the RFIC 3. Details of the circuit configuration of the high-frequency module 1 will be described later.

[0023] Antenna 2 is connected to the high-frequency module 1. Antenna 2 can receive high-frequency signals from the high-frequency module 1 and transmit them to the outside of the communication device 5. Furthermore, antenna 2 can receive high-frequency signals from outside the communication device 5 and supply them to the high-frequency module 1. Note that antenna 2 does not necessarily have to be included in the communication device 5. In addition, the communication device 5 may have one or more antennas in addition to antenna 2.

[0024] RFIC3 is an example of a signal processing circuit that processes high-frequency signals. Specifically, RFIC3 processes the transmission signal input from BBIC4 by upconversion, etc., and can output the high-frequency transmission signal generated by this signal processing to high-frequency module 1. Furthermore, RFIC3 processes the high-frequency received signal input via the receiving path of high-frequency module 1 by downconversion, etc., and can output the received signal generated by this signal processing to BBIC4. RFIC3 may also have a control unit that controls the switch circuit and power amplifier circuit of high-frequency module 1. Note that some or all of the control unit functions of RFIC3 may be included outside of RFIC3, for example, in BBIC4 or high-frequency module 1.

[0025] BBIC4 is a baseband signal processing circuit that processes signals using a frequency band lower than the high-frequency signal transmitted by the high-frequency module 1. Examples of signals processed by BBIC4 include image signals for image display and / or voice signals for communication via a speaker. Note that part or all of BBIC4 may not be included in the communication device 5.

[0026] [1.2. Circuit configuration of high-frequency module 1] Next, the circuit configuration of the high-frequency module 1 according to this embodiment will be described with reference to Figure 1. Note that Figure 1 shows an exemplary circuit configuration, and the high-frequency module 1 can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1 provided below should not be interpreted as restrictive.

[0027] The high-frequency module 1 includes a power amplifier 11, low-noise amplifiers 21 and 22, filters 31, 32 and 33, inductors 41 and 42, switch circuits 51, 52 and 53, an antenna connection terminal 100, a high-frequency input terminal 111, high-frequency output terminals 121 and 122, and digital control terminals 131 and 132.

[0028] The antenna connection terminal 100 is an external connection terminal of the high-frequency module 1. The antenna connection terminal 100 is a terminal for supplying high-frequency signals to antenna 2 and a terminal for receiving high-frequency signals from antenna 2. The antenna connection terminal 100 is connected to antenna 2 outside the high-frequency module 1 and to the switch circuit 51 inside the high-frequency module 1.

[0029] The high-frequency input terminal 111 is an external connection terminal of the high-frequency module 1 and is a terminal for receiving high-frequency signals from the RFIC 3. The high-frequency input terminal 111 is connected to the RFIC 3 outside the high-frequency module 1 and to the power amplifier 11 inside the high-frequency module 1.

[0030] The high-frequency output terminals 121 and 122 are external connection terminals of the high-frequency module 1 and are terminals for supplying high-frequency signals to the RFIC 3. The high-frequency output terminals 121 and 122 are connected to the RFIC 3 externally from the high-frequency module 1 and are connected to the low-noise amplifiers 21 and 22 internally from the high-frequency module 1, respectively.

[0031] The digital control terminal 131 is an example of a first digital control terminal and is an external connection terminal of the high-frequency module 1. The digital control terminal 131 is a terminal for receiving the digital control signal D1 from the RFIC 3. The digital control terminal 131 is connected to the RFIC 3 outside the high-frequency module 1 and to the PA control circuit 61, etc., inside the high-frequency module 1.

[0032] The digital control terminal 132 is an example of a second digital control terminal and is an external connection terminal of the high-frequency module 1. The digital control terminal 132 is a terminal for receiving a digital control signal D2 from the RFIC 3. The digital control terminal 132 is connected to the RFIC 3 outside the high-frequency module 1 and to semiconductor components 72, including low-noise amplifiers 21 and 22, inside the high-frequency module 1.

[0033] Digital control signal D1 is an example of a first digital control signal and is a digital control signal for transmission. Digital control signal D1 includes signals to control the power amplifier 11 and may include, for example, commands indicating transmit enabled, transmit disabled, receive enabled, receive disabled, or any combination thereof on a subframe basis for signals in TDD band A.

[0034] Digital control signal D2 is an example of a second digital control signal and is a digital control signal for reception. Digital control signal D2 includes signals that control low-noise amplifiers 21 and 22.

[0035] Source-synchronous serial data signals can be used as digital control signals D1 and D2. In this case, each of the digital control signals D1 and D2 includes a clock signal and a data signal, and each of the digital control terminals 131 and 132 may include a terminal for receiving the clock signal and a terminal for receiving the data signal. Clock-embedded serial data signals may also be used as digital control signals D1 and D2.

[0036] The power amplifier 11 is connected between the high-frequency input terminal 111 and the switch circuit 52. Specifically, the input terminal of the power amplifier 11 is connected to the high-frequency input terminal 111, and the output terminal of the power amplifier 11 is connected to the switch circuit 52. The power amplifier 11 can amplify high-frequency signals using power supplied from a power source (not shown).

[0037] Part or all of the power amplifier 11 can be mounted on semiconductor components. For example, silicon germanium (SiGe) or gallium arsenide (GaAs) can be used as the semiconductor material for the semiconductor components. In this case, part or all of the amplification transistors of the power amplifier 11 can be composed of heterojunction bipolar transistors (HBTs). Alternatively, gallium nitride (GaN) or silicon carbide (SiC) can be used as the semiconductor material for the semiconductor components. In this case, part or all of the amplification transistors of the power amplifier 11 can be composed of HEMTs (High Electron Mobility Transistors) or MESFETs (Metal-Semiconductor Field Effect Transistors). Alternatively, silicon single crystal (Si) can be used as the semiconductor material for the semiconductor components. In this case, part or all of the amplification transistors of the power amplifier 11 may be composed of CMOS (Complementary Metal Oxide Semiconductors) and may be manufactured by an SOI (Silicon on Insulator) process. The power amplifier 11 may be divided and mounted on multiple semiconductor components.

[0038] The low-noise amplifier 21 is an example of a first low-noise amplifier and is connected between the inductor 41 and the high-frequency output terminal 121. Specifically, the input terminal of the low-noise amplifier 21 is connected to the inductor 41, and the output terminal of the low-noise amplifier 21 is connected to the high-frequency output terminal 121. The low-noise amplifier 21 is included in semiconductor component 72.

[0039] The low-noise amplifier 22 is an example of a second low-noise amplifier and is connected between the inductor 42 and the high-frequency output terminal 122. Specifically, the input terminal of the low-noise amplifier 22 is connected to the inductor 42, and the output terminal of the low-noise amplifier 22 is connected to the high-frequency output terminal 122. The low-noise amplifier 22 is included in semiconductor component 72.

[0040] The low-noise amplifiers 21 and 22 are controlled based on digital control signals D1 and D2. Specifically, the low-noise amplifiers 21 and 22 can be switched on and off individually. For example, the on and off states of the low-noise amplifiers 21 and 22 may be switched by switching the supply and non-supply of the power supply voltage. Alternatively, the on and off states of the low-noise amplifiers 21 and 22 may be switched by switching the supply and non-supply of the bias voltage.

[0041] Filter 31 is an example of a first filter and is a bandpass filter having a passband that includes the TDD band A. Filter 31 can pass signals (A-TRx) within the TDD band A and attenuate signals outside the TDD band A. Filter 31 is connected between switch circuits 51 and 52. Specifically, one end of filter 31 is connected to the select terminal 511 of switch circuit 51, and the other end of filter 31 is connected to the common terminal 521 of switch circuit 52.

[0042] Filter 32 is an example of a second filter and is a bandpass filter having a passband that includes the receiving band of FDD band B. Filter 32 can pass signals within the receiving band of FDD band B (B-Rx) and attenuate signals outside the receiving band of FDD band B. Filter 32 is connected between switch circuits 51 and 53. Specifically, one end of filter 32 is connected to the select terminal 512 of switch circuit 51, and the other end of filter 32 is connected to the select terminal 534 of switch circuit 53.

[0043] Filter 33 is an example of a third filter and is a bandpass filter having a passband that includes the transmission band of FDD band B. Filter 33 can pass signals (B-Tx) within the transmission band of FDD band B and attenuate signals outside the transmission band of FDD band B. Filter 33 is connected between switch circuits 51 and 52. Specifically, one end of filter 33 is connected to the selection terminal 512 of switch circuit 51, and the other end of filter 33 is connected to the common terminal 522 of switch circuit 52. Note that filter 33 does not necessarily have to be included in the high-frequency module 1.

[0044] Filters 31-33 may be, but are not limited to, surface acoustic wave (SAW) filters, bulk acoustic wave (BAW) filters, LC filters, or dielectric filters, or any combination thereof.

[0045] Inductor 41 is an example of a first inductor and is connected between the switch circuit 53 and the low-noise amplifier 21. Specifically, one end of inductor 41 is connected to the common terminal 531 of the switch circuit 53, and the other end of inductor 41 is connected to the input terminal of the low-noise amplifier 21. Inductor 41 can achieve impedance matching between the switch circuit 53 and the low-noise amplifier 21. Note that inductor 41 does not necessarily have to be included in the high-frequency module 1.

[0046] Inductor 42 is an example of a second inductor and is connected between the switch circuit 53 and the low-noise amplifier 22. Specifically, one end of inductor 42 is connected to the common terminal 532 of the switch circuit 53, and the other end of inductor 42 is connected to the input terminal of the low-noise amplifier 22. Inductor 42 can achieve impedance matching between the switch circuit 53 and the low-noise amplifier 22. Note that inductor 42 does not necessarily have to be included in the high-frequency module 1.

[0047] The switch circuit 51 is an example of a first switch circuit and is connected between the antenna connection terminal 100 and filters 31 to 33. Specifically, the switch circuit 51 includes a common terminal 510 and selection terminals 511 and 512. The common terminal 510 is an example of a first common terminal and is connected to the antenna connection terminal 100. The selection terminal 511 is an example of a first selection terminal and is connected to filter 31. The selection terminal 512 is an example of a second selection terminal and is connected to filters 32 and 33. The switch circuit 51 is included in semiconductor component 71b and is composed of, for example, a multi-connection type switch circuit.

[0048] In this configuration, the switch circuit 51 can connect the common terminal 510 to the selection terminals 511 and 512 based on, for example, the digital control signal D1 from the RFIC 3. In other words, the switch circuit 51 can switch the connection and disconnection of the antenna connection terminal 100 to the filter 31, and can switch the connection and disconnection of the antenna connection terminal 100 to the filters 32 and 33.

[0049] Switch circuit 52 is an example of a second switch circuit and is connected between filter 31 and power amplifier 11 and low-noise amplifier 21, and between filter 33 and power amplifier 11. Specifically, switch circuit 52 includes common terminals 521 and 522 and selection terminals 523 and 524. Common terminal 521 is an example of a second common terminal and is connected to filter 31. Common terminal 522 is an example of a fifth common terminal and is connected to filter 33. Note that if filter 33 is not included in high-frequency module 1, common terminal 522 may not be included in switch circuit 52. Selection terminal 523 is an example of a third selection terminal and is connected to power amplifier 11. Selection terminal 524 is an example of a fourth selection terminal and is connected to low-noise amplifier 21 via switch circuit 53 and inductor 41. Switch circuit 52 is included in semiconductor component 71c and is composed of, for example, a multi-connection type switch circuit.

[0050] In this configuration, the switch circuit 52 can selectively connect the common terminal 521 to the select terminals 523 and 524, and selectively connect the select terminal 523 to the common terminals 521 and 522, for example, based on the digital control signal D1 from the RFIC 3. In other words, the switch circuit 52 can switch whether to connect the filter 31 to the output terminal of the power amplifier 11 or to the input terminal of the low-noise amplifier 21 via the switch circuit 53, and further, it can switch whether to connect the output terminal of the power amplifier 11 to the filter 31 or to the filter 33.

[0051] Switch circuit 53 is an example of a third switch circuit and is connected between the low-noise amplifiers 21 and 22 and the filters 31 and 32. Specifically, switch circuit 53 includes common terminals 531 and 532 and selection terminals 533 and 534. Common terminal 531 is an example of a third common terminal and is connected to the input terminal of the low-noise amplifier 21 via inductor 41. Common terminal 532 is an example of a fourth common terminal and is connected to the input terminal of the low-noise amplifier 22 via inductor 42. Selection terminal 533 is an example of a fifth selection terminal and is connected to the filter 31 via switch circuit 52. Selection terminal 534 is an example of a sixth selection terminal and is connected to the filter 32. Switch circuit 53 is included in semiconductor component 72 and consists of two SPST (Single-Pole Single-Throw) type switches. Note that switch circuit 53 does not necessarily have to be included in semiconductor component 72 and does not necessarily have to be included in the high-frequency module 1.

[0052] In this configuration, the switch circuit 53 can, for example, switch the connection of the common terminal 531 to the selection terminal 533 and the connection of the common terminal 532 to the selection terminal 534 based on digital control signals D1 and D2 from the RFIC3. In other words, the switch circuit 53 can switch whether or not to connect the input terminal of the low-noise amplifier 21 to the filter 31 via the switch circuit 52, and can switch whether or not to connect the input terminal of the low-noise amplifier 22 to the filter 32.

[0053] The PA control circuit 61 can control the power amplifier 11. Specifically, the PA control circuit 61 supplies a control signal to the power amplifier 11 based on a digital control signal D1 supplied from the RFIC 3 via the digital control terminal 131. This controls the bias current supplied to the power amplifier 11, etc. The PA control circuit 61 is included in the semiconductor component 71a.

[0054] Semiconductor component 71a is an example of a first semiconductor component and includes a PA control circuit 61. The semiconductor component 71a is connected to a digital control terminal 131.

[0055] Semiconductor component 71b is an example of a first semiconductor component and includes a switch circuit 51. Semiconductor component 71b is connected to a digital control terminal 131.

[0056] The semiconductor component 71c is an example of a first semiconductor component and includes a switch circuit 52. The semiconductor component 71c is connected to the digital control terminal 131.

[0057] Semiconductor component 72 is an example of a second semiconductor component and includes low-noise amplifiers 21 and 22 and a switch circuit 53. Semiconductor component 72 is connected to digital control terminal 132. Furthermore, semiconductor component 72 is connected to digital control terminal 131 via semiconductor component 71a.

[0058] In this embodiment, semiconductor component 72 is connected to the digital control terminal 131 via semiconductor component 71a, but it may also be connected to the digital control terminal 131 via other semiconductor components. For example, semiconductor component 72 may be connected to the digital control terminal 131 via semiconductor components 71b and / or 71c instead of, or in addition to, semiconductor component 71a.

[0059] For example, silicon single crystal (Si), gallium nitride (GaN), or silicon carbide (SiC) can be used as the semiconductor material for semiconductor components 71a, 71b, 71c, and 72. In this case, some or all of the low-noise amplifiers 21 and 22, the PA control circuit 61, and the switch circuits 51 to 53 can be made up of FETs. Bipolar transistors may be used instead of FETs.

[0060] Each circuit component of the high-frequency module 1 described above is arranged on a module substrate (not shown). The module substrate can be, but is not limited to, a low-temperature co-fired ceramics (LTCC) substrate or a high-temperature co-fired ceramics (HTCC) substrate having a laminated structure of multiple dielectric layers, a component-embedded substrate, a substrate having a redistribution layer (RDL), or a printed circuit board.

[0061] [1.3. Frequency Bands] Here, we will describe the TDD band A and FDD band B supported by the high-frequency module 1.

[0062] TDD band A and FDD band B are frequency bands for communication systems built using Radio Access Technology (RAT). TDD band A and FDD band B are predefined by standardization bodies (e.g., 3GPP and IEEE). Examples of communication systems include 5GNR (5th Generation New Radio) systems, 4GLTE (4th Generation Long Term Evolution) systems, and WLAN (Wireless Local Area Network) systems.

[0063] For example, TDD band A can be Band 41 for 4G LTE or n41 for 5G NR. Similarly, FDD band B can be Band 66 for 4G LTE or n66 for 5G NR. However, the combinations of TDD band A and FDD band B are not limited to the above combinations. For example, combinations of TDD band A and FDD band B may include Band 41 or n41 with Band 1 or n1, Band 41 or n41 with Band 3 or n3, Band 41 or n41 with Band 25 or n25, or Band 41 or n41 with Band 32 or n32. For example, as combinations of TDD band A and FDD band B, a combination of Band 40 or n40 and Band 1 or n1, a combination of Band 40 or n40 and Band 3 or n3, a combination of Band 40 or n40 and Band 7 or n7, or a combination of Band 40 or n40 and Band 32 or n32 may be used.

[0064] [1.4. Communication Mode] Next, the communication modes of the high-frequency module 1 according to this embodiment will be described.

[0065] [1.4.1. First Mode (First Connection State)] First, the first connection state of the first mode included in the communication modes of the high-frequency module 1 will be explained with reference to Figure 2. Figure 2 is a diagram showing the first connection state of the first mode of the high-frequency module 1 according to this embodiment. In Figure 2, dashed arrows represent signal paths.

[0066] The first mode is a communication mode for transmitting and receiving signals in TDD band A and receiving signals in FDD band B. In the first connection state, it is possible to transmit signals in TDD band A and receive signals in FDD band B. In the first mode, the transmitted and received signals in TDD band A can be separated by repeatedly switching between the first connection state and the second connection state (described later) over time.

[0067] In the first connection state of the first mode, switch circuit 51 connects the common terminal 510 to selection terminals 511 and 512. Switch circuit 52 connects the common terminal 521 to selection terminal 523, but not to selection terminal 524. Furthermore, switch circuit 52 does not connect the common terminal 522 to selection terminal 523. Switch circuit 53 connects the common terminal 532 to selection terminal 534, but does not connect the common terminal 531 to selection terminal 533. Low-noise amplifier 21 is turned off, and low-noise amplifier 22 is turned on.

[0068] In this connection configuration, the TDD band A transmission signal is transmitted from RFIC3 to antenna 2 via the high-frequency input terminal 111, power amplifier 11, switch circuit 52, filter 31, switch circuit 51, and antenna connection terminal 100. The FDD band B reception signal is transmitted from antenna 2 to RFIC3 via the antenna connection terminal 100, switch circuit 51, filter 32, switch circuit 53, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0069] According to this, in the first connection state of the first mode, the low-noise amplifier 21 is turned off, and the common terminal 531 of the switch circuit 53 is not connected to the selection terminal 533. Therefore, even if the transmission signal of TDD band A leaks into the receiving path of TDD band A via the switch circuit 52, leakage to the receiving path of FDD band B can be suppressed by the coupling of the low-noise amplifiers 21 and 22, and / or the coupling of inductors 41 and 42. This makes it possible to suppress the deterioration of the receiving sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B.

[0070] [1.4.2. First Mode (Second Connection State)] Next, the second connection state of the first mode included in the communication modes of the high-frequency module 1 will be explained with reference to Figure 3. Figure 3 is a diagram showing the second connection state of the first mode of the high-frequency module 1 according to this embodiment. In Figure 3, dashed arrows represent signal paths.

[0071] As described above, the first mode is a communication mode for transmitting and receiving signals in TDD band A and receiving signals in FDD band B. In the second connection state, it is possible to receive signals in TDD band A and FDD band B. In the first mode, the transmitted and received signals in TDD band A can be separated by repeatedly switching between the first and second connection states over time.

[0072] In the second connection state of the first mode, switch circuit 51 connects the common terminal 510 to selection terminals 511 and 512. Switch circuit 52 connects the common terminal 521 to selection terminal 524, but not to selection terminal 523. Furthermore, switch circuit 52 does not connect the common terminal 522 to selection terminal 523. Switch circuit 53 connects the common terminal 531 to selection terminal 533, and also connects the common terminal 532 to selection terminal 534. Both low-noise amplifiers 21 and 22 are turned on.

[0073] In this connection configuration, the TDD band A received signal is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51, filter 31, switch circuit 52, switch circuit 53, inductor 41, low-noise amplifier 21, and high-frequency output terminal 121. The FDD band B received signal is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51, filter 32, switch circuit 53, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0074] [1.4.3. Second Mode] Next, the second mode included in the communication modes of the high-frequency module 1 will be explained with reference to Figure 4. Figure 4 is a diagram showing the second mode of the high-frequency module 1 according to this embodiment. In Figure 4, the dashed arrows represent the signal path.

[0075] The second mode is a communication mode for receiving signals in TDD band A and transmitting and receiving signals in FDD band B. In the second mode, switch circuit 51 connects the common terminal 510 to select terminals 511 and 512. Switch circuit 52 connects the common terminal 521 to select terminal 524, but not to select terminal 523. Furthermore, switch circuit 52 connects the common terminal 522 to select terminal 523. Switch circuit 53 connects the common terminal 531 to select terminal 533 and the common terminal 532 to select terminal 534. Both low-noise amplifiers 21 and 22 are turned on.

[0076] In this connection configuration, the received signal for TDD band A is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51, filter 31, switch circuit 52, switch circuit 53, inductor 41, low-noise amplifier 21, and high-frequency output terminal 121. The transmitted signal for FDD band B is transmitted from RFIC 3 to antenna 2 via high-frequency input terminal 111, power amplifier 11, switch circuit 52, filter 33, switch circuit 51, and antenna connection terminal 100. The received signal for FDD band B is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51, filter 32, switch circuit 53, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0077] Although the first and second modes of the high-frequency module 1 have been described with reference to Figures 2 to 4, the communication modes of the high-frequency module 1 are not limited to the first and second modes. For example, the communication modes of the high-frequency module 1 do not have to include the second mode. Also, for example, the communication modes of the high-frequency module 1 may include a mode in which signals are transmitted and / or received in the TDD band A without transmitting and receiving signals in the FDD band B, or a mode in which signals are transmitted and / or received in the FDD band B without transmitting and receiving signals in the TDD band A.

[0078] [1.5. Summary] As described above, the high-frequency module 1 according to this embodiment includes digital control terminals 131 and 132, an antenna connection terminal 100, a semiconductor component 71a connected to the digital control terminal 131, a semiconductor component 72 connected to the digital control terminal 132 and including low-noise amplifiers 21 and 22, a power amplifier 11, a PA control circuit 61, a filter 31 having a passband including the TDD band A, a filter 32 connected to the low-noise amplifier 22 and having a passband including the receiving band of the FDD band B that can communicate simultaneously with the TDD band A, a switch circuit 51 including a common terminal 510 connected to the antenna connection terminal 100, a select terminal 511 connected to the filter 31, and a select terminal 512 connected to the filter 32, and a switch circuit 52 including a common terminal 521 connected to the filter 31, a select terminal 523 connected to the power amplifier 11, and a select terminal 524 connected to the low-noise amplifier 21, and the semiconductor component 72 is further connected to the digital control terminal 131 via semiconductor component 71a.

[0079] According to this, in addition to the digital control terminal 132, a digital control terminal 131 is connected to the semiconductor component 72. Therefore, the semiconductor component 72, including the low-noise amplifiers 21 and 22, can be controlled based on the digital control signal D1 supplied from the RFIC 3 via the digital control terminal 131, in addition to the digital control signal D2 supplied from the RFIC 3 via the digital control terminal 132. This makes it possible to control the semiconductor component 72 in accordance with the switching between transmission and reception of TDD band A during simultaneous communication of TDD band A and FDD band B. As a result, leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed, and the deterioration of the reception sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0080] Furthermore, for example, in the high-frequency module 1 according to this embodiment, the semiconductor component 71a may include the PA control circuit 61.

[0081] According to this, the digital control signal D1 supplied from RFIC3 to PA control circuit 61 can be supplied to semiconductor component 72, and leakage of TDD band A transmission signals to low-noise amplifiers 21 and 22 can be suppressed.

[0082] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 72 may be connected to the digital control terminal 131 via the semiconductor component 71b in place of or in addition to the semiconductor component 71a, and the semiconductor component 71b may include a switch circuit 51.

[0083] According to this, a digital control signal D1 that controls the switch circuit 51 can be supplied to the semiconductor component 72, and leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed.

[0084] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 72 may be connected to the digital control terminal 131 via the semiconductor component 71c, either instead of or in addition to the semiconductor component 71a, and the semiconductor component 71c may include a switch circuit 52.

[0085] According to this, a digital control signal D1 that controls the switch circuit 52 can be supplied to the semiconductor component 72, and leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed.

[0086] For example, in the high-frequency module 1 according to this embodiment, the digital control terminal 131 may be an external connection terminal that receives a digital control signal D1 including a signal to control the power amplifier 11, and the digital control terminal 132 may be an external connection terminal that receives a digital control signal D2 including a signal to control the low-noise amplifiers 21 and 22.

[0087] According to this, in addition to a digital control signal D2 supplied from the RFIC3 via the digital control terminal 132, which includes signals for controlling the low-noise amplifiers 21 and 22, the semiconductor component 72 including the low-noise amplifiers 21 and 22 can be controlled based on a digital control signal D1 supplied from the RFIC3 via the digital control terminal 131, which includes signals for controlling the power amplifier 11.

[0088] For example, in the high-frequency module 1 according to this embodiment, in a first connection state in which a signal in TDD band A is transmitted and a signal in the receiving band of FDD band B is received, (i) the switch circuit 51 may connect the common terminal 510 to the selection terminals 511 and 512, (ii) the switch circuit 52 may connect the common terminal 521 to the selection terminal 523 instead of connecting it to the selection terminal 524, (iii) the low-noise amplifier 21 may be turned off and the low-noise amplifier 22 may be turned on. In a second connection state in which a signal in TDD band A is received and a signal in the receiving band of FDD band B is received, (iv) the switch circuit 51 may connect the common terminal 510 to the selection terminals 511 and 512, (v) the switch circuit 52 may connect the common terminal 521 to the selection terminal 524 instead of connecting it to the selection terminal 523, and (vi) the low-noise amplifiers 21 and 22 may be turned on.

[0089] According to this, the low-noise amplifier 21 is turned off in the first connection state. Therefore, even if the transmission signal of TDD band A leaks into the receiving path of TDD band A via the switch circuit 52, the coupling of the low-noise amplifiers 21 and 22 can suppress leakage to the receiving path of FDD band B. As a result, the deterioration of the receiving sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0090] For example, in the high-frequency module 1 according to this embodiment, the semiconductor component 72 may further include a switch circuit 53 that includes a common terminal 531 connected to the low-noise amplifier 21, a common terminal 532 connected to the low-noise amplifier 22, a select terminal 533 connected to the select terminal 524, and a select terminal 534 connected to the filter 32.

[0091] According to this, leakage of the TDD band A transmission signal into the TDD band A reception path and the FDD band B reception path can be further suppressed.

[0092] For example, the high-frequency module 1 according to this embodiment may further include an inductor 41 connected between the common terminal 531 and the low-noise amplifier 21, and an inductor 42 connected between the common terminal 532 and the low-noise amplifier 22.

[0093] According to this, signal loss due to impedance mismatch between the low-noise amplifiers 21 and 22 and the switch circuit 53 can be suppressed.

[0094] For example, in the high-frequency module 1 according to this embodiment, in a first connection state in which a signal in the TDD band A is transmitted and a signal in the receiving band of the FDD band B is received, (i) the switch circuit 51 may connect the common terminal 510 to the selection terminals 511 and 512, (ii) the switch circuit 52 may connect the common terminal 521 to the selection terminal 523 and not to the selection terminal 524, and (iii) the switch circuit 53 may not connect the common terminal 531 to the selection terminal 533 and may select the common terminal 532 In a second connection state in which a signal in TDD band A is received and a signal in the receiving band of FDD band B is received, (iv) switch circuit 51 may connect the common terminal 510 to the selection terminals 511 and 512, (v) switch circuit 52 may connect the common terminal 521 to the selection terminal 524 and not to the selection terminal 523, and (vi) switch circuit 53 may connect the common terminal 531 to the selection terminal 533 and the common terminal 532 to the selection terminal 534.

[0095] According to this, in the first connection state, the switch circuit 53 does not connect the common terminal 531 to the selection terminal 533. Therefore, even if the transmission signal of TDD band A leaks into the reception path of TDD band A via the switch circuit 52, leakage to the reception path of FDD band B can be suppressed by the coupling of the low-noise amplifiers 21 and 22 and / or the coupling of the inductors 41 and 42. As a result, the deterioration of the reception sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0096] For example, the high-frequency module 1 according to this embodiment may further include a filter 33 connected to the selection terminal 512 and having a passband that includes the transmission bandwidth of FDD band B, and the switch circuit 52 may further include a common terminal 522 connected to the filter 33.

[0097] According to this, it is possible to support the transmission of FDD band B signals.

[0098] (Embodiment 2) Next, Embodiment 2 will be described. The high-frequency module 1A according to this embodiment differs from the high-frequency module 1 according to Embodiment 1 in that it is equipped with separate filters for transmitting and receiving signals in the TDD band A. Below, this embodiment will be described with reference to the drawings, focusing on the differences from Embodiment 1.

[0099] The circuit configuration of the communication device 5A according to this embodiment is the same as that of the communication device 5 according to Embodiment 1, except that it is equipped with a high-frequency module 1A instead of the high-frequency module 1, so its description will be omitted.

[0100] [2.1. Circuit configuration of high-frequency module 1A] The circuit configuration of the high-frequency module 1A according to this embodiment will be described with reference to Figure 5. Figure 5 is a circuit diagram of the communication device 5A according to this embodiment. In Figure 5, the dashed lines in the switch circuit represent the paths between terminals that can be switched between conductive and non-conductive states.

[0101] Figure 5 shows an exemplary circuit configuration, and the high-frequency module 1A can be implemented using a wide variety of circuit implementations and circuit technologies. Therefore, the description of the high-frequency module 1A provided below should not be interpreted restrictively.

[0102] The high-frequency module 1A includes a power amplifier 11, low-noise amplifiers 21 and 22, filters 31T, 31R, 32 and 33, inductors 41 and 42, switch circuits 51A, 52A and 53A, antenna connection terminal 100, high-frequency input terminal 111, high-frequency output terminals 121 and 122, and digital control terminals 131 and 132.

[0103] Filter 31T is an example of a first filter and is a bandpass filter having a passband that includes TDD band A. Filter 31T can pass signals within TDD band A and attenuate signals outside TDD band A. Filter 31T is used for the transmit signal (A-Tx) in TDD band A. Filter 31T is connected between switch circuits 51A and 52A. Specifically, one end of filter 31T is connected to the select terminal 511A of switch circuit 51A, and the other end of filter 31T is connected to the select terminal 521A of switch circuit 52A.

[0104] Filter 31R is an example of a second filter and is a bandpass filter having a passband that includes TDD band A. Filter 31R can pass signals within TDD band A and attenuate signals outside TDD band A. Filter 31R is used for the received signal (A-Rx) in TDD band A. Filter 31R is connected between switch circuits 51A and 53A. Specifically, one end of filter 31R is connected to the select terminal 512A of switch circuit 51A, and the other end of filter 31R is connected to the select terminal 533A of switch circuit 53A.

[0105] Filter 32 is an example of a third filter and is a bandpass filter having a passband that includes the receiving band of FDD band B. Filter 32 can pass signals within the receiving band of FDD band B (B-Rx) and attenuate signals outside the receiving band of FDD band B. Filter 32 is connected between switch circuits 51A and 53A. Specifically, one end of filter 32 is connected to the select terminal 513A of switch circuit 51A, and the other end of filter 32 is connected to the select terminal 534A of switch circuit 53A.

[0106] Filter 33 is an example of a fourth filter and is a bandpass filter having a passband that includes the transmission band of FDD band B. Filter 33 can pass signals within the transmission band of FDD band B (B-Tx) and attenuate signals outside the transmission band of FDD band B. Filter 33 is connected between switch circuits 51A and 52A. Specifically, one end of filter 33 is connected to the select terminal 513A of switch circuit 51A, and the other end of filter 33 is connected to the select terminal 522A of switch circuit 52A. Note that filter 33 does not necessarily have to be included in the high-frequency module 1A.

[0107] Switch circuit 51A is an example of a first switch circuit and is connected between the antenna connection terminal 100 and filters 31T, 31R, 32, and 33. Specifically, switch circuit 51A includes a common terminal 510A and selection terminals 511A, 512A, and 513A. Common terminal 510A is an example of a first common terminal and is connected to the antenna connection terminal 100. Selection terminal 511A is an example of a first selection terminal and is connected to filter 31T. Selection terminal 512A is an example of a second selection terminal and is connected to filter 31R. Selection terminal 513A is an example of a third selection terminal and is connected to filters 32 and 33. Switch circuit 51A is included in semiconductor component 71b and is composed of, for example, a multi-connection type switch circuit.

[0108] In this configuration, the switch circuit 51A can selectively connect the common terminal 510A to the select terminals 511A and 512A based on, for example, the digital control signal D1 from the RFIC3, and can switch between connecting and not connecting the common terminal 510A to the select terminal 513A. In other words, the switch circuit 51A can switch whether to connect the antenna connection terminal 100 to filter 31T or filter 31R, and can also switch whether or not to connect the antenna connection terminal 100 to filters 32 and 33.

[0109] Switch circuit 52A is an example of a second switch circuit and is connected between the power amplifier 11 and filters 31T and 33. Specifically, switch circuit 52A includes a common terminal 520A and selection terminals 521A and 522A. Common terminal 520A is an example of a second common terminal and is connected to the output terminal of the power amplifier 11. Selection terminal 521A is an example of a fourth selection terminal and is connected to filter 31T. Selection terminal 522A is an example of a fifth selection terminal and is connected to filter 33. Switch circuit 52A is included in semiconductor component 71c and is composed of, for example, an SPDT (Single-Pole Double-Throw) type switch. Note that if filter 33 is not included in high-frequency module 1A, switch circuit 52A does not need to include selection terminal 522A, and furthermore, does not need to be included in high-frequency module 1A.

[0110] In this configuration, the switch circuit 52A can selectively connect the common terminal 520A to the select terminals 521A and 522A based, for example, on the digital control signal D1 from the RFIC3. In other words, the switch circuit 52A can switch whether the output terminal of the power amplifier 11 is connected to the filter 31T or to the filter 33.

[0111] Switch circuit 53A is an example of a third switch circuit and is connected between the low-noise amplifiers 21 and 22 and the filters 31R and 32. Specifically, switch circuit 53A includes common terminals 531A and 532A and select terminals 533A and 534A. Common terminal 531A is an example of a third common terminal and is connected to the input terminal of the low-noise amplifier 21 via inductor 41. Common terminal 532A is an example of a fourth common terminal and is connected to the input terminal of the low-noise amplifier 22 via inductor 42. Select terminal 533A is an example of a sixth select terminal and is connected to filter 31R. Select terminal 534A is an example of a seventh select terminal and is connected to filter 32. Switch circuit 53A is included in semiconductor component 72 and consists of two SPST type switches. Note that switch circuit 53A does not necessarily have to be included in semiconductor component 72 and does not necessarily have to be included in high-frequency module 1A.

[0112] In this configuration, the switch circuit 53A can switch the connection and disconnection of the common terminal 531A to the selection terminal 533A, and the connection and disconnection of the common terminal 532A to the selection terminal 534A, based on digital control signals D1 and D2 from the RFIC3, for example. In other words, the switch circuit 53A can switch whether or not to connect the input terminal of the low-noise amplifier 21 to the filter 31R, and whether or not to connect the input terminal of the low-noise amplifier 22 to the filter 32.

[0113] [2.2. Communication Mode] Next, the communication modes of the high-frequency module 1A according to this embodiment will be described.

[0114] [2.2.1. First Mode (First Connection State)] First, the first connection state of the first mode included in the communication modes of the high-frequency module 1A will be explained with reference to Figure 6. Figure 6 is a diagram showing the first connection state of the first mode of the high-frequency module 1A according to this embodiment. In Figure 6, dashed arrows represent signal paths.

[0115] In the first connection state of the first mode, switch circuit 51A connects the common terminal 510A to selection terminals 511A and 513A, but not to selection terminal 512A. Switch circuit 52A connects the common terminal 520A to selection terminal 521A, but not to selection terminal 522A. Switch circuit 53A connects the common terminal 532A to selection terminal 534A, but not to selection terminal 533A. Low-noise amplifier 21 is turned off, and low-noise amplifier 22 is turned on.

[0116] In this connection configuration, the TDD band A transmission signal is transmitted from RFIC3 to antenna 2 via the high-frequency input terminal 111, power amplifier 11, switch circuit 52A, filter 31T, switch circuit 51A, and antenna connection terminal 100. The FDD band B reception signal is transmitted from antenna 2 to RFIC3 via the antenna connection terminal 100, switch circuit 51A, filter 32, switch circuit 53A, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0117] According to this, in the first connection state of the first mode, the low-noise amplifier 21 is turned off, and the common terminal 531A of the switch circuit 53A is not connected to the selection terminal 533A. Therefore, even if the transmission signal of TDD band A leaks into the reception path of TDD band A via the switch circuit 51A, leakage to the reception path of FDD band B can be suppressed by the coupling of inductors 41 and 42. This makes it possible to suppress the deterioration of the reception sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B.

[0118] [2.2.2. First Mode (Second Connection State)] Next, the second connection state of the first mode included in the communication modes of the high-frequency module 1A will be explained with reference to Figure 7. Figure 7 is a diagram showing the second connection state of the first mode of the high-frequency module 1A according to this embodiment. In Figure 7, dashed arrows represent signal paths.

[0119] In the second connection state of the first mode, switch circuit 51A connects the common terminal 510A to selection terminals 512A and 513A, but not to selection terminal 511A. Switch circuit 52A does not connect the common terminal 520A to selection terminals 521A and 522A. Switch circuit 53A connects the common terminal 531A to selection terminal 533A, and also connects the common terminal 532A to selection terminal 534A. Both low-noise amplifiers 21 and 22 are turned on.

[0120] In this connection configuration, the received signal for TDD band A is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51A, filter 31R, switch circuit 53A, inductor 41, low-noise amplifier 21, and high-frequency output terminal 121. The received signal for FDD band B is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51A, filter 32, switch circuit 53A, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0121] [2.2.3. Second Mode] Next, the second mode included in the communication modes of the high-frequency module 1A will be explained with reference to Figure 8. Figure 8 is a diagram showing the second mode of the high-frequency module 1A according to this embodiment. In Figure 8, the dashed arrows represent the signal path.

[0122] In the second mode, switch circuit 51A connects the common terminal 510A to selection terminals 512A and 513A, but not to selection terminal 511A. Switch circuit 52A connects the common terminal 520A to selection terminal 522A, but not to selection terminal 521A. Switch circuit 53A connects the common terminal 531A to selection terminal 533A, and also connects the common terminal 532A to selection terminal 534A. Both low-noise amplifiers 21 and 22 are turned on.

[0123] In this connection configuration, the TDD band A received signal is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51A, filter 31R, switch circuit 53A, inductor 41, low-noise amplifier 21, and high-frequency output terminal 121. The FDD band B transmitted signal is transmitted from RFIC 3 to antenna 2 via high-frequency input terminal 111, power amplifier 11, switch circuit 52A, filter 33, switch circuit 51A, and antenna connection terminal 100. The FDD band B received signal is transmitted from antenna 2 to RFIC 3 via antenna connection terminal 100, switch circuit 51A, filter 32, switch circuit 53A, inductor 42, low-noise amplifier 22, and high-frequency output terminal 122.

[0124] Although the first and second modes of the high-frequency module 1A have been described with reference to Figures 6 to 8, the communication modes of the high-frequency module 1A are not limited to the first and second modes. For example, the communication modes of the high-frequency module 1A do not have to include the second mode. Also, for example, the communication modes of the high-frequency module 1A may include a mode in which signals are transmitted and / or received in the TDD band A without transmitting and receiving signals in the FDD band B, or a mode in which signals are transmitted and / or received in the FDD band B without transmitting and receiving signals in the TDD band A.

[0125] [2.3. Summary] As described above, the high-frequency module 1A according to this embodiment includes digital control terminals 131 and 132, an antenna connection terminal 100, a semiconductor component 71a connected to the digital control terminal 131, a semiconductor component 72 connected to the digital control terminal 132 and including low-noise amplifiers 21 and 22, a power amplifier 11, a PA control circuit 61, a filter 31T connected to the power amplifier 11 and having a passband including TDD band A, a filter 31R connected to the low-noise amplifier 21 and having a passband including TDD band A, a filter 32 connected to the low-noise amplifier 22 and having a passband including the receiving band of FDD band B that can communicate simultaneously with TDD band A, and a switch circuit 51A including a common terminal 510A connected to the antenna connection terminal 100, a selection terminal 511A connected to filter 31T, a selection terminal 512A connected to filter 31R, and a selection terminal 513A connected to filter 32. The semiconductor component 72 is further connected to the digital control terminal 131 via semiconductor component 71a.

[0126] According to this, in addition to the digital control terminal 132, a digital control terminal 131 is connected to the semiconductor component 72. Therefore, the semiconductor component 72, including the low-noise amplifiers 21 and 22, can be controlled based on the digital control signal D1 supplied from the RFIC 3 via the digital control terminal 131, in addition to the digital control signal D2 supplied from the RFIC 3 via the digital control terminal 132. This makes it possible to control the semiconductor component 72 in accordance with the switching between transmission and reception of TDD band A during simultaneous communication of TDD band A and FDD band B. As a result, leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed, and the deterioration of the reception sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0127] Furthermore, for example, in the high-frequency module 1A according to this embodiment, the semiconductor component 71a may include the PA control circuit 61.

[0128] According to this, the digital control signal D1 supplied from RFIC3 to PA control circuit 61 can be supplied to semiconductor component 72, and leakage of TDD band A transmission signals to low-noise amplifiers 21 and 22 can be suppressed.

[0129] For example, in the high-frequency module 1A according to this embodiment, the semiconductor component 72 may be connected to the digital control terminal 131 via the semiconductor component 71b in place of or in addition to the semiconductor component 71a, and the semiconductor component 71b may include a switch circuit 51A.

[0130] According to this, a digital control signal D1 that controls the switch circuit 51A can be supplied to the semiconductor component 72, and leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed.

[0131] For example, the high-frequency module 1A according to this embodiment may further include a filter 33 connected to a selection terminal 513A and having a passband that includes the transmission band of FDD band B, and a switch circuit 52A that includes a common terminal 520A connected to the power amplifier 11, a selection terminal 521A connected to the filter 31T, and a selection terminal 522A connected to the filter 33.

[0132] According to this, it is possible to support the transmission of FDD band B signals.

[0133] For example, in the high-frequency module 1A according to this embodiment, the semiconductor component 72 may be connected to the digital control terminal 131 via the semiconductor component 71c, either instead of or in addition to the semiconductor component 71a, and the semiconductor component 71c may include a switch circuit 52A.

[0134] According to this, a digital control signal D1 that controls the switch circuit 52A can be supplied to the semiconductor component 72, and leakage of the TDD band A transmission signal to the low-noise amplifiers 21 and 22 can be suppressed.

[0135] For example, in the high-frequency module 1A according to this embodiment, the digital control terminal 131 may be an external connection terminal that receives a digital control signal D1 including a signal to control the power amplifier 11, and the digital control terminal 132 may be an external connection terminal that receives a digital control signal D2 including a signal to control the low-noise amplifiers 21 and 22.

[0136] According to this, in addition to a digital control signal D2 supplied from the RFIC3 via the digital control terminal 132, which includes signals for controlling the low-noise amplifiers 21 and 22, the semiconductor component 72 including the low-noise amplifiers 21 and 22 can be controlled based on a digital control signal D1 supplied from the RFIC3 via the digital control terminal 131, which includes signals for controlling the power amplifier 11.

[0137] For example, in the high-frequency module 1A according to this embodiment, in a first connection state in which a signal in TDD band A is transmitted and a signal in the receiving band of FDD band B is received, (i) the switch circuit 51A may connect the common terminal 510A to the selection terminals 511A and 513A instead of connecting it to the selection terminal 512A, and (ii) the low-noise amplifier 21 may be turned off and the low-noise amplifier 22 may be turned on. In a second connection state in which a signal in TDD band A is received and a signal in the receiving band of FDD band B is received, (iii) the switch circuit 51A may connect the common terminal 510A to the selection terminals 512A and 513A instead of connecting it to the selection terminal 511A, and (iv) the low-noise amplifiers 21 and 22 may be turned on.

[0138] According to this, the low-noise amplifier 21 is turned off in the first connection state. Therefore, even if the transmitted signal of TDD band A leaks into the receiving path of TDD band A, the coupling of low-noise amplifiers 21 and 22 can suppress leakage to the receiving path of FDD band B. As a result, the deterioration of the receiving sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0139] For example, in the high-frequency module 1A according to this embodiment, the semiconductor component 72 may further include a switch circuit 53A that includes a common terminal 531A connected to the low-noise amplifier 21, a common terminal 532A connected to the low-noise amplifier 22, a select terminal 533A connected to the filter 31R, and a select terminal 534A connected to the filter 32.

[0140] According to this, leakage of the TDD band A transmission signal into the TDD band A reception path and the FDD band B reception path can be further suppressed.

[0141] For example, the high-frequency module 1A according to this embodiment may further include an inductor 41 connected between the common terminal 531A and the low-noise amplifier 21, and an inductor 42 connected between the common terminal 532A and the low-noise amplifier 22.

[0142] According to this, signal loss due to impedance mismatch between the low-noise amplifiers 21 and 22 and the switch circuit 53A can be suppressed.

[0143] Furthermore, for example, in the high-frequency module 1A according to this embodiment, in a first connection state in which a signal in the TDD band A is transmitted and a signal in the receiving band of the FDD band B is received, (i) the switch circuit 51A may connect the common terminal 510A to the selection terminals 511A and 513A instead of connecting it to the selection terminal 512A, and (ii) the switch circuit 53A may not connect the common terminal 531A to the selection terminal 533A, and may connect the common terminal 532A to the selection terminal 534A. In a second connection state in which a signal in the TDD band A is received and a signal in the receiving band of the FDD band B is received, (iii) the switch circuit 51A may connect the common terminal 510A to the selection terminals 512A and 513A instead of connecting it to the selection terminal 511A, and (iv) the switch circuit 53A may connect the common terminal 531A to the selection terminal 533A, and may connect the common terminal 532A to the selection terminal 534A.

[0144] According to this, in the first connection state, the switch circuit 53A does not connect the common terminal 531A to the selection terminal 533A. Therefore, even if the transmission signal of TDD band A leaks into the reception path of TDD band A via the switch circuit 52A, leakage to the reception path of FDD band B can be suppressed by the coupling of the low-noise amplifiers 21 and 22 and / or the coupling of inductors 41 and 42. As a result, the deterioration of the reception sensitivity of FDD band B during simultaneous communication of TDD band A and FDD band B can be suppressed.

[0145] (Other embodiments) The high-frequency module according to the present invention has been described above based on embodiments, but the high-frequency module according to the present invention is not limited to the above embodiments. Other embodiments realized by combining any of the components in the above embodiments, modified versions obtained by applying various modifications to the above embodiments that a person skilled in the art can conceive without departing from the spirit of the present invention, and various devices incorporating the above high-frequency module are also included in the present invention.

[0146] For example, in the circuit configuration of the high-frequency module according to each of the above embodiments, other circuit elements and wiring may be inserted between the paths connecting each circuit element and signal path disclosed in the drawings. For example, an impedance matching circuit may be connected between each of the filters 31 to 33 and the switch circuit 51, and / or between each of the filters 31T, 31R, 32 and 33 and the switch circuit 51A. Also, for example, an impedance matching circuit may be connected between the power amplifier 11 and the switch circuits 52 and / or 52A. Also, for example, a coupler may be connected between the switch circuits 51 and / or 51A and the antenna connection terminal 100.

[0147] In each of the above embodiments, the high-frequency modules 1 and 1A may include one or more power amplifiers in addition to the power amplifier 11. In this case, the switch circuits 52 and 52A may further include one or more terminals, and one or more power amplifiers may be connected to these one or more terminals. This enables the high-frequency modules 1 and 1A to support simultaneous transmission of signals in TDD band A and FDD band B.

[0148] Furthermore, in the first embodiment described above, the high-frequency module 1 may include one or more filters in addition to filters 31 to 33. Similarly, in the second embodiment described above, the high-frequency module 1A may include one or more filters in addition to filters 31T, 31R, 32 and 33. In this case, the switch circuits 51, 51A, 52, 52A, 53 and 53A may further include one or more terminals, and one or more filters may be connected to these one or more terminals.

[0149] The features of the high-frequency modules described based on the above embodiments are shown below.

[0150] <1> First digital control terminal and second digital control terminal, Antenna connection terminal and A first semiconductor component connected to the first digital control terminal, A second semiconductor component, connected to the second digital control terminal, includes a first low-noise amplifier and a second low-noise amplifier, Power amplifier and A first filter having a passband including the TDD band, A second filter connected to the second low-noise amplifier, having a passband that includes the receiving bandwidth of the FDD band capable of simultaneous communication with the TDD band, A first switch circuit including a first common terminal connected to the antenna connection terminal, a first select terminal connected to the first filter, and a second select terminal connected to the second filter, The system includes a second switch circuit which includes a second common terminal connected to the first filter, a third select terminal connected to the power amplifier, and a fourth select terminal connected to the first low-noise amplifier, The second semiconductor component is further connected to the first digital control terminal via the first semiconductor component. High-frequency module.

[0151] <2> The first semiconductor component includes a PA control circuit. <1> The high-frequency module described above.

[0152] <3> The first semiconductor component includes the first switch circuit, <1> The high-frequency module described above.

[0153] <4> The first semiconductor component includes the second switch circuit, <1> The high-frequency module described above.

[0154] <5> The first digital control terminal is an external connection terminal that receives a first digital control signal including a signal for controlling the power amplifier, The second digital control terminal is an external connection terminal that receives a second digital control signal, which includes a signal for controlling the first low-noise amplifier and the second low-noise amplifier. <1> ~ <4> A high-frequency module as described in one of the following.

[0155] <6> In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band's receiving band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (ii) The second switch circuit connects the second common terminal to the third selection terminal without connecting it to the fourth selection terminal, (iii) The first low-noise amplifier is turned off, and the second low-noise amplifier is turned on. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iv) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (v) The second switch circuit connects the second common terminal to the fourth selection terminal and does not connect to the third selection terminal. (vi) The first low-noise amplifier and the second low-noise amplifier are turned on. <1> ~ <5> A high-frequency module as described in one of the following.

[0156] <7> The second semiconductor component further includes a third switch circuit comprising a third common terminal connected to the first low-noise amplifier, a fourth common terminal connected to the second low-noise amplifier, a fifth select terminal connected to the fourth select terminal, and a sixth select terminal connected to the second filter. <1> ~ <6> A high-frequency module as described in one of the following.

[0157] <8> The aforementioned high-frequency module further, A first inductor connected between the third common terminal and the first low-noise amplifier, The device comprises a second inductor connected between the fourth common terminal and the second low-noise amplifier, <7> The high-frequency module described above.

[0158] <9> In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band's receiving band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (ii) The second switch circuit connects the second common terminal to the third selection terminal without connecting it to the fourth selection terminal, (iii) The third switch circuit does not connect the third common terminal to the fifth selection terminal, and connects the fourth common terminal to the sixth selection terminal, In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iv) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (v) The second switch circuit connects the second common terminal to the fourth selection terminal without connecting it to the third selection terminal, (vi) The third switch circuit connects the third common terminal to the fifth selection terminal and the fourth common terminal to the sixth selection terminal. <7> or <8> The high-frequency module described above.

[0159] <10> The high-frequency module further comprises a third filter connected to the second selection terminal and having a passband that includes the transmission bandwidth of the FDD band, The second switch circuit further includes a fifth common terminal connected to the third filter, <1> ~ <9> A high-frequency module as described in one of the following.

[0160] <11> First digital control terminal and second digital control terminal, Antenna connection terminal and A first semiconductor component connected to the first digital control terminal, A second semiconductor component, connected to the second digital control terminal, includes a first low-noise amplifier and a second low-noise amplifier, Power amplifier and A first filter connected to the power amplifier and having a passband including the TDD band, A second filter connected to the first low-noise amplifier and having a passband including the TDD band, A third filter connected to the second low-noise amplifier, having a passband that includes the receiving bandwidth of the FDD band capable of simultaneous communication with the TDD band, The system includes a first switch circuit which includes a first common terminal connected to the antenna connection terminal, a first select terminal connected to the first filter, a second select terminal connected to the second filter, and a third select terminal connected to the third filter, The second semiconductor component is further connected to the first digital control terminal via the first semiconductor component. High-frequency module.

[0161] <12> The first semiconductor component includes a PA control circuit. <11> The high-frequency module described above.

[0162] <13> The first semiconductor component includes the first switch circuit, <11> The high-frequency module described above.

[0163] <14> The aforementioned high-frequency module further, A fourth filter connected to the third selection terminal and having a passband that includes the transmission bandwidth of the FDD band, The system includes a second switch circuit which includes a second common terminal connected to the power amplifier, a fourth select terminal connected to the first filter, and a fifth select terminal connected to the fourth filter. <11> The high-frequency module described above.

[0164] <15> The first semiconductor component includes the second switch circuit, <14> The high-frequency module described above.

[0165] <16> The first digital control terminal is an external connection terminal that receives a first digital control signal including a signal for controlling the power amplifier, The second digital control terminal is an external connection terminal that receives a second digital control signal, which includes a signal for controlling the first low-noise amplifier and the second low-noise amplifier. <11> ~ <15> A high-frequency module as described in one of the following.

[0166] <17> In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band's receiving band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the third selection terminal without connecting the first common terminal to the second selection terminal, (ii) The first low-noise amplifier is turned off, and the second low-noise amplifier is turned on. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iii) The first switch circuit connects the first common terminal to the second and third selection terminals without connecting it to the first selection terminal, (iv) The first low-noise amplifier and the second low-noise amplifier are turned on. <11> ~ <16> A high-frequency module as described in one of the following.

[0167] <18> The second semiconductor component further includes a third switch circuit comprising a third common terminal connected to the first low-noise amplifier, a fourth common terminal connected to the second low-noise amplifier, a sixth select terminal connected to the second filter, and a seventh select terminal connected to the third filter. <11> ~ <17> A high-frequency module as described in one of the following.

[0168] <19> The aforementioned high-frequency module further, A first inductor connected between the third common terminal and the first low-noise amplifier, The device comprises a second inductor connected between the fourth common terminal and the second low-noise amplifier, <18> The high-frequency module described above.

[0169] <20> In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band's receiving band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the third selection terminal without connecting the first common terminal to the second selection terminal, (ii) The third switch circuit does not connect the third common terminal to the sixth selection terminal, and connects the fourth common terminal to the seventh selection terminal. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iii) The first switch circuit connects the first common terminal to the second and third selection terminals without connecting it to the first selection terminal, (iv) The third switch circuit connects the third common terminal to the sixth selection terminal and the fourth common terminal to the seventh selection terminal. <18> or <19> The high-frequency module described above. [Industrial applicability]

[0170] This invention can be widely used in communication devices such as mobile phones as a high-frequency module positioned in the front end. [Explanation of Symbols]

[0171] 1. 1A High-Frequency Module 2 antennas 3RFIC 4 BBIC 5, 5A communication device 11 Power Amplifier 21, 22 Low-noise amplifier 31, 31R, 31T, 32, 33 filters 41, 42 Inductors 51, 51A, 52, 52A, 53, 53A switch circuits 61 PA control circuit 71a, 71b, 71c, 72 Semiconductor components 100 Antenna connection terminal 111 High-frequency input terminal 121, 122 High-frequency output terminals 131, 132 Digital control terminals Common terminals for 510, 510A, 520A, 521, 522, 531, 531A, 532, and 532A. 511, 511A, 512, 512A, 513A, 521A, 522A, 523, 524, 533, 533A, 534, 534A Selectable terminals A TDD Band B FDD Band D1, D2 Digital Control Signals

Claims

1. First digital control terminal and second digital control terminal, Antenna connection terminal and A first semiconductor component connected to the first digital control terminal, A second semiconductor component, which includes a first low-noise amplifier and a second low-noise amplifier, is connected to the second digital control terminal. Power amplifier and A first filter having a passband including the TDD band, A second filter connected to the second low-noise amplifier, having a passband that includes the receiving bandwidth of the FDD band capable of simultaneous communication with the TDD band, A first switch circuit including a first common terminal connected to the antenna connection terminal, a first selection terminal connected to the first filter, and a second selection terminal connected to the second filter, The system includes a second switch circuit which includes a second common terminal connected to the first filter, a third select terminal connected to the power amplifier, and a fourth select terminal connected to the first low-noise amplifier, The second semiconductor component is further connected to the first digital control terminal via the first semiconductor component. High-frequency module.

2. The first semiconductor component includes a PA control circuit. The high-frequency module according to claim 1.

3. The first semiconductor component includes a first switch circuit, The high-frequency module according to claim 1.

4. The first semiconductor component includes the second switch circuit, The high-frequency module according to claim 1.

5. The first digital control terminal is an external connection terminal that receives a first digital control signal including a signal for controlling the power amplifier. The second digital control terminal is an external connection terminal that receives a second digital control signal, which includes a signal for controlling the first low-noise amplifier and the second low-noise amplifier. A high-frequency module according to any one of claims 1 to 4.

6. In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band reception band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (ii) The second switch circuit connects the second common terminal to the third selection terminal without connecting it to the fourth selection terminal, (iii) The first low-noise amplifier is turned off, and the second low-noise amplifier is turned on. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iv) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (v) The second switch circuit connects the second common terminal to the fourth selection terminal and does not connect to the third selection terminal. (vi) The first low-noise amplifier and the second low-noise amplifier are turned on. A high-frequency module according to any one of claims 1 to 4.

7. The second semiconductor component further includes a third switch circuit comprising a third common terminal connected to the first low-noise amplifier, a fourth common terminal connected to the second low-noise amplifier, a fifth select terminal connected to the fourth select terminal, and a sixth select terminal connected to the second filter. A high-frequency module according to any one of claims 1 to 4.

8. The aforementioned high-frequency module further, A first inductor connected between the third common terminal and the first low-noise amplifier, The device comprises a second inductor connected between the fourth common terminal and the second low-noise amplifier, The high-frequency module according to claim 7.

9. In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band reception band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (ii) The second switch circuit connects the second common terminal to the third selection terminal without connecting it to the fourth selection terminal, (iii) The third switch circuit does not connect the third common terminal to the fifth selection terminal, and connects the fourth common terminal to the sixth selection terminal, In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iv) The first switch circuit connects the first common terminal to the first selection terminal and the second selection terminal, (v) The second switch circuit connects the second common terminal to the fourth selection terminal without connecting it to the third selection terminal, (vi) The third switch circuit connects the third common terminal to the fifth selection terminal and the fourth common terminal to the sixth selection terminal. The high-frequency module according to claim 7.

10. The high-frequency module further includes a third filter connected to the second selection terminal and having a passband that includes the transmission bandwidth of the FDD band, The second switch circuit further includes a fifth common terminal connected to the third filter, A high-frequency module according to any one of claims 1 to 4.

11. First digital control terminal and second digital control terminal, Antenna connection terminal and A first semiconductor component connected to the first digital control terminal, A second semiconductor component, which includes a first low-noise amplifier and a second low-noise amplifier, is connected to the second digital control terminal. Power amplifier and A first filter connected to the power amplifier and having a passband including the TDD band, A second filter connected to the first low-noise amplifier and having a passband including the TDD band, A third filter connected to the second low-noise amplifier, having a passband that includes the receiving bandwidth of the FDD band capable of simultaneous communication with the TDD band, The system includes a first switch circuit which includes a first common terminal connected to the antenna connection terminal, a first select terminal connected to the first filter, a second select terminal connected to the second filter, and a third select terminal connected to the third filter, The second semiconductor component is further connected to the first digital control terminal via the first semiconductor component. High-frequency module.

12. The first semiconductor component includes a PA control circuit. The high-frequency module according to claim 11.

13. The first semiconductor component includes a first switch circuit, The high-frequency module according to claim 11.

14. The aforementioned high-frequency module further, A fourth filter connected to the third selection terminal and having a passband that includes the transmission bandwidth of the FDD band, The system includes a second switch circuit which includes a second common terminal connected to the power amplifier, a fourth select terminal connected to the first filter, and a fifth select terminal connected to the fourth filter. The high-frequency module according to claim 11.

15. The first semiconductor component includes the second switch circuit, The high-frequency module according to claim 14.

16. The first digital control terminal is an external connection terminal that receives a first digital control signal including a signal for controlling the power amplifier. The second digital control terminal is an external connection terminal that receives a second digital control signal, which includes a signal for controlling the first low-noise amplifier and the second low-noise amplifier. A high-frequency module according to any one of claims 11 to 15.

17. In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band reception band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the third selection terminal without connecting the first common terminal to the second selection terminal, (ii) The first low-noise amplifier is turned off, and the second low-noise amplifier is turned on. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iii) The first switch circuit connects the first common terminal to the second and third selection terminals without connecting it to the first selection terminal, (iv) The first low-noise amplifier and the second low-noise amplifier are turned on. A high-frequency module according to any one of claims 11 to 15.

18. The second semiconductor component further includes a third switch circuit comprising a third common terminal connected to the first low-noise amplifier, a fourth common terminal connected to the second low-noise amplifier, a sixth select terminal connected to the second filter, and a seventh select terminal connected to the third filter. A high-frequency module according to any one of claims 11 to 15.

19. The aforementioned high-frequency module further, A first inductor connected between the third common terminal and the first low-noise amplifier, The device comprises a second inductor connected between the fourth common terminal and the second low-noise amplifier, The high-frequency module according to claim 18.

20. In a first connection state in which a signal in the TDD band is transmitted and a signal in the FDD band reception band is received, (i) The first switch circuit connects the first common terminal to the first selection terminal and the third selection terminal without connecting the first common terminal to the second selection terminal, (ii) The third switch circuit does not connect the third common terminal to the sixth selection terminal, and connects the fourth common terminal to the seventh selection terminal. In a second connection state in which a signal in the TDD band is received and a signal in the FDD band's receiving bandwidth is received, (iii) The first switch circuit connects the first common terminal to the second and third selection terminals without connecting it to the first selection terminal, (iv) The third switch circuit connects the third common terminal to the sixth selection terminal and the fourth common terminal to the seventh selection terminal. The high-frequency module according to claim 18.

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