Method for manufacturing a substrate and method for manufacturing a light-emitting device

Abstract

The present invention provides a method for manufacturing a substrate and a method for manufacturing a light-emitting device, which allow for the easy placement of a solid having a higher thermal conductivity than a conductive material within a resin layer. [Solution] The manufacturing method according to the embodiment is a method for manufacturing a substrate comprising a resin layer, a conductive member disposed in the resin layer, and a first solid having a higher thermal conductivity than the conductive member. The manufacturing method includes a preparation step of preparing an intermediate body including the resin layer having a first surface and a second surface opposite to the first surface. The manufacturing method also includes a first solid body placement step of directly or indirectly placing the first solid body on the first surface and pressurizing the intermediate body and the first solid body to place at least a portion of the first solid body into the resin layer.

Description

[Technical Field]

[0001] This disclosure relates to a method for manufacturing a substrate and a method for manufacturing a light-emitting device. [Background technology]

[0002] There is a substrate in which conductive material and thermal conductive element are arranged within a resin layer. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2014-107542 [Overview of the Initiative] [Problems that the invention aims to solve]

[0004] The embodiments of this disclosure aim to provide a method for manufacturing a substrate and a method for manufacturing a light-emitting device, which enable the easy placement of a solid having a higher thermal conductivity than a conductive material within a resin layer. [Means for solving the problem]

[0005] The manufacturing method according to the embodiment is a method for manufacturing a substrate comprising a resin layer, a conductive member disposed within the resin layer, and a first solid having a higher thermal conductivity than the conductive member. The method for manufacturing the substrate includes a preparation step of preparing an intermediate body including the resin layer having a first surface and a second surface opposite to the first surface. The method for manufacturing the substrate also includes a first solid body placement step of directly or indirectly placing the first solid body on the first surface and pressurizing the intermediate body and the first solid body to place at least a portion of the first solid body into the resin layer.

[0006] A method for manufacturing a light-emitting device according to an embodiment comprises the above-described method for manufacturing a substrate and a light-emitting element arrangement step of arranging a light-emitting element on the first solid body and the conductive member. [Effects of the Invention]

[0007] According to an embodiment of the present disclosure, it is possible to provide a method for manufacturing a substrate and a method for manufacturing a light-emitting device in which a solid body having a higher thermal conductivity than a conductive member can be easily arranged in a resin layer.

Brief Description of the Drawings

[0008] [Figure 1A] It is a schematic top view showing a substrate according to an embodiment. [Figure 1B] It is a schematic cross-sectional view taken along line IB-IB of FIG. 1A. [Figure 2] It is a flowchart showing a method for manufacturing a substrate according to an embodiment. [Figure 3A] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3B] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3C] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3D] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3E] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3F] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3G] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3H] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 3I] It is a schematic cross-sectional view showing a method for manufacturing a substrate according to an embodiment. [Figure 4A] It is a schematic cross-sectional view showing a specific example of a method for arranging a first solid body. [Figure 4B] It is a schematic cross-sectional view showing a specific example of a method for arranging a first solid body. [Figure 4C] It is a schematic cross-sectional view showing a specific example of a method for arranging a first solid body. [Figure 4D]It is a schematic cross-sectional view showing a specific example of the arrangement method of the first solid body. [Figure 4E] It is a schematic cross-sectional view showing a specific example of the arrangement method of the first solid body. [Figure 4F] It is a schematic cross-sectional view showing a specific example of the arrangement method of the first solid body. [Figure 4G] It is a schematic cross-sectional view showing a specific example of the arrangement method of the first solid body. [Figure 5A] It is a schematic diagram showing the state of inspection. [Figure 5B] It is a schematic diagram showing an example of an image obtained by inspection. [Figure 6A] It is a schematic cross-sectional view showing an example of a diamond. [Figure 6B] It is a schematic cross-sectional view showing an example of composite particles. [Figure 6C] It is a schematic cross-sectional view showing an example of composite particles. [Figure 7] It is a schematic cross-sectional view enlarging the vicinity of the first solid body and the vicinity of the conductive member in Fig. 3I. [Figure 8A] It is a schematic top view showing a substrate according to a modification of the embodiment. [Figure 8B] It is a schematic cross-sectional view taken along line VIIIB-VIIIB of Fig. 8A. [Figure 9A] It is a schematic top view showing a light-emitting device according to the embodiment. [Figure 9B] It is a schematic cross-sectional view taken along line IXB-IXB of Fig. 9A. [Figure 10A] It is a schematic diagram showing a manufacturing method of a light-emitting device according to the embodiment. [Figure 10B] It is a schematic diagram showing a manufacturing method of a light-emitting device according to the embodiment. [Figure 10C] It is a schematic diagram showing a manufacturing method of a light-emitting device according to the embodiment.

Embodiments for Carrying Out the Invention

[0009] The embodiments of this disclosure will be described below with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes of the parts, etc., are not necessarily the same as those of reality. Also, even when representing the same part, the dimensions or ratios may be represented differently in the drawings. In this specification and each drawing, the same reference numerals are used for elements that have already been described, and detailed explanations are omitted as appropriate. In some cases, an end view showing only the cut surface may be used as a cross-sectional view.

[0010] In this description of the embodiments, the XYZ Cartesian coordinate system may be used. In the X direction, the direction in which the arrow points is the +X side, and the opposite side of the +X side is the -X side. In the Y direction, the direction in which the arrow points is the +Y side, and the opposite side of the +Y side is the -Y side. In the Z direction, the direction in which the arrow points is the +Z side, and the opposite side of the +Z side is the -Z side. As an example, the light-emitting element of the light-emitting device according to the embodiment emits light towards the +Z side. Also, in the terminology of the embodiments, "top view" means viewing the object from the +Z side. In this specification, in addition to parts that can be directly seen from above, parts that cannot be directly seen from above may also be described as if they were visible through the light source. However, these do not restrict the orientation of the substrate and light-emitting device according to the embodiment when they are used, and the orientation of the substrate and light-emitting device according to the embodiment is arbitrary.

[0011] In this specification, the surface of an object viewed from the +Z side is sometimes referred to as the "top surface," and the surface of an object viewed from the -Z side is sometimes referred to as the "bottom surface." Viewing an object from the +Z side is called a top view. Viewing an object from the -Z side is called a bottom view.

[0012] In this specification or in the claims, when there are multiple components and each is to be expressed separately, the components may be distinguished by adding "First," "Second," etc., to their names. Furthermore, the objects being distinguished may differ between this specification and the claims. Therefore, even if a component with the same designation as in this specification is described in the claims, the objects identified by this component may not be the same in this specification and the claims.

[0013] For example, if there are components in this specification that are distinguished by being designated as “First,” “Second,” and “Third,” and the claims include components designated as “First” and “Third,” or components designated as “First” and components without a specific ordinal number included, the claims may be designated as “First” and “Second” to distinguish the components for clarity. In this case, the components designated as “First” and “Second” in the claims refer to the components designated as “First” and “Third” or components without a specific ordinal number included in this specification, respectively. This rule is not limited to components, but can be applied reasonably and flexibly to other objects as well.

[0014] Figure 1A is a schematic top view showing a substrate according to an embodiment. Figure 1B is a schematic cross-sectional view along the line IB-IB in Figure 1A. The direction perpendicular to the top surface of the substrate 1 is defined as the Z direction. The two directions perpendicular to the Z direction and mutually orthogonal are defined as the X direction and the Y direction.

[0015] The substrate 1 shown in Figures 1A and 1B comprises a resin layer 10, a conductive member 20, and a first solid body 30. The conductive member 20 and the first solid body 30 are arranged within the resin layer 10. The conductive member 20 has a higher thermal conductivity than the resin layer 10. The first solid body 30 has a higher thermal conductivity than the resin layer 10 and the conductive member 20.

[0016] In the illustrated example, the conductive member 20 and the first solid body 30 are exposed on the upper and lower surfaces of the substrate 1. The first solid body 30 is located in the center of the substrate 1 in the XY plane. Multiple conductive members 20 are arranged around the first solid body 30 in the XY plane. The area of ​​the first solid body 30 in the XY plane is larger than the area of ​​a single conductive member 20 in the XY plane.

[0017] Figure 2 is a flowchart illustrating a method for manufacturing a substrate according to an embodiment. As shown in Figure 2, the manufacturing method according to the embodiment mainly comprises a preparation step P1 and a first solid body placement step P2. In the preparation step P1, an intermediate body including a resin layer 10 is prepared. In the first solid body placement step P2, at least a portion of the first solid body 30 is placed in the resin layer 10.

[0018] As an example, as shown in Figure 2, preparation step P1 includes conductive member placement step P3. In conductive member placement step P3, the conductive member 20 is placed in the resin layer 10. That is, an intermediate is prepared which includes the resin layer 10 and the conductive member 20. As another example, an intermediate which includes only the resin layer 10 may be prepared in preparation step P1. In that case, conductive member placement step P3 may be performed after the first solid body placement step P2, or it may be performed simultaneously with the first solid body placement step P2. Alternatively, an intermediate which includes the conductive member 20 may be prepared by purchasing an intermediate which already has the conductive member 20 placed in the resin layer 10. In that case, conductive member placement step P3 is not performed. Below, a specific example of the manufacturing method according to the embodiment will be described.

[0019] (Embodiment) Figures 3A to 3I are schematic cross-sectional views illustrating the manufacturing method of a substrate according to the embodiment.

[0020] First, a resin layer 10 is prepared as shown in Figure 3A. The resin layer 10 is flat and has a first surface S1 and a second surface S2. The second surface S2 is the surface opposite to the first surface S1. The first surface S1 and the second surface S2 are parallel to the XY plane. The resin layer 10 contains a thermosetting resin such as epoxy resin or phenolic resin.

[0021] In the illustrated example, the resin layer 10 includes fiber material 15. The fiber material 15 is arranged along the XY plane of the resin layer 10. The fiber material 15 is glass fiber, Kevlar® fiber, or carbon fiber. The diameter of each fiber material 15 is, for example, 5 μm to 10 μm. In the resin layer 10, multiple fiber materials 15 are bundled together to form a fiber bundle. These multiple fiber bundles are then woven in layers. In this embodiment, the diameter of the fiber bundles is, for example, 10 μm to 110 μm. The weaving method of the multiple fiber bundles can be appropriately selected, such as plain weave, satin weave, or twill weave. For example, multiple layered fiber bundles are arranged so that they overlap each other in the Z direction. As the resin layer 10 containing the fiber material 15, a prepreg in which resin is impregnated into the fibers can be used. By including the fiber material 15 in the resin layer 10, the strength of the resin layer 10 can be improved. The thickness of the resin layer 10 is, for example, 50 μm or more and 500 μm or less.

[0022] For example, the three-point bending strength of the resin layer 10 in the intermediate is 450 N / mm². 2 The above is preferable. The three-point bending strength is measured by fixing both ends of a 1.6 mm thick resin layer 10 and applying a load to the midpoint between those ends. The three-point bending strength test is performed in an environment of 25°C. For example, the three-point bending strength test is performed in accordance with ISO 178. There is no particular upper limit to the bending strength, but 550 N / mm is preferable. 2 The following may be the case: The bending strength of the resin layer 10 in the intermediate can be obtained by cutting off a portion of the resin layer 10, and the measurement can be performed using that portion of the resin layer 10.

[0023] As shown in Figure 3B, film 41 is attached to the first surface S1 and film 42 is attached to the second surface S2. Films 41 and 42 are thinner than the resin layer 10, and for example, PET (Poly Ethylene Terephthalate) film can be used.

[0024] As shown in Figure 3C, holes H are formed that penetrate the resin layer 10, film 41, and film 42 in the Z direction. The holes H are formed by a drill or laser. The number, position, and dimensions of the holes H formed correspond to the number, position, and dimensions of the conductive members 20 that are subsequently placed. After forming the holes H, surface treatment such as sandblasting may be performed. Surface treatment removes burrs and other debris generated during the formation of the holes H.

[0025] As shown in Figure 3D, the area of ​​the first surface S1 other than the holes H is covered with a metal mask 43. In this state, the squeegee 44 is moved back and forth to print the paste-like conductive material 20. Moving the squeegee 44 back and forth makes it easier to fill the holes H with the paste-like conductive material 20. The conductive material 20 enters the holes H that are not covered by the metal mask 43.

[0026] The conductive member 20 contains a metallic material such as copper or silver. From a cost standpoint, it is preferable that the conductive member 20 has copper as its main component. The "main component" refers to a component that makes up 50% or more of the material. Furthermore, it is preferable that the conductive member 20 fills the hole H without any gaps from one open end to the other open end. As a result, the dimension D2 of the conductive member 20 in the Z direction becomes longer than the dimension D1 of the resin layer 10 in the Z direction by the thickness of the film 41, the thickness of the film 42, and the thickness of the metal mask 43.

[0027] After the process shown in Figure 3D, the metal mask 43, film 41, and film 42 are removed to obtain an intermediate 5 in which the conductive member 20 is placed in the resin layer 10, as illustrated in Figure 3E. At this point, the conductive member 20 is not yet hardened, but the viscosity of the paste-like conductive member 20 is high. Therefore, by slowly peeling off the metal mask 43, film 41, and film 42, the occurrence of sagging of the conductive member 20 can be reduced. In addition, the conductive member 20 protrudes from the first surface S1 and the second surface S2 of the resin layer 10 by a thickness corresponding to the thickness of the metal mask 43, film 41, and film 42, respectively. The process shown in Figures 3A to 3E corresponds to the preparation process P1 shown in Figure 2. The process shown in Figures 3B to 3E corresponds to the conductive member placement process P3 shown in Figure 2. Therefore, in this embodiment, the preparation process P1 includes the process of preparing the resin layer 10 and the conductive member placement process P3 in which the conductive member 20 is placed in the resin layer 10.

[0028] As shown in Figure 3F, adhesion is provided to a portion of the exposed first surface S1. For example, as shown in Figure 3F, adhesion is provided by applying adhesive A to the portion of the first surface S1. Alternatively, instead of adhesive A, adhesion may be provided by heating the portion of the first surface S1 with a laser or the like to melt the resin. The adhesion is provided at a location away from the conductive member 20. The location and dimensions of the area to which adhesion is provided correspond to the location and dimensions of the first solid body 30 which is placed later. Hereafter, the area on the first surface S1 to which adhesion is provided will be called the "adhesive area". In the example shown in Figure 3F, the adhesive area is the area to which adhesive A is applied.

[0029] As shown in Figure 3F, the first solid 30 is adhered to a portion of the first surface S1. More specifically, the first solid 30 is placed in the adhesion area of ​​the first surface S1. For example, a large number of particulate first solids 30 are sprinkled onto the first surface S1. The first solids 30 placed in the adhesion area adhere to the first surface S1. By removing the first solids 30 that do not adhere, it is possible to place the first solids 30 only in the adhesion area.

[0030] Figures 4A to 4G are schematic cross-sectional views showing specific examples of the arrangement method for the first solid. As a more specific procedure, first, a mask M1 including a resin layer or a metal plate is prepared as shown in Figure 4A. The mask M1 has one or more holes OP1. One first solid 30 is placed in one of the holes OP1. The thickness of the mask M1 and the diameter of one of the holes OP1 are designed based on the diameter of the first solid 30.

[0031] Next, as shown in Figure 4B, the mask M1 is placed on the first surface S1 of the resin layer 10 of the intermediate body 5. At this time, the mask M1 is positioned so that the position of the holes OP1 of the mask M1 coincides with the position where the first solid body 30 is to be placed.

[0032] Next, as shown in Figure 4C, adhesive A or the like is applied to the region of the first surface S1 of the resin layer 10 that overlaps with the hole OP1. The adhesive A or the like is sprayed onto the first surface S1 and the upper surface of the mask M1, for example, using a spray SP.

[0033] If adhesive A or the like adheres to the upper surface of mask M1, mask M1 is replaced with mask M2 as shown in Figures 4D and 4E. Mask M2 is prepared separately from mask M1. Like mask M1, mask M2 has one or more holes OP2. The thickness of mask M2 and the diameter of one hole OP2 are designed based on the diameter of the first solid 30 and may be substantially the same as the thickness of mask M1 and the diameter of one hole OP1. After removing mask M1 from the first surface S1, mask M1 and mask M2 can be replaced by placing mask M2 on the first surface S1 such that the position of the hole OP2 of mask M2 overlaps with the intended position of the first solid 30.

[0034] Next, the first solid 30 is prepared and placed on the first surface S1 or the mask M2. As shown in Figure 4F, the squeegee SK is moved back and forth along the upper surface of the mask M2. If the first solid 30 does not enter the hole OP2 and is placed on the mask M2, the squeegee SK places the first solid 30 inside the hole OP2 of the mask M2. The first solid 30 placed inside the hole OP2 is bonded to the first surface S1 by adhesive A. If multiple first solids 30 are used, any excess first solids 30 that were not placed inside the hole OP2 are removed by the squeegee SK.

[0035] For example, if the thickness of the mask M2 is small, the first solid 30 that entered the hole OP2 on the forward pass of the squeegee SK may move to the outside of the hole OP2 on the return pass of the squeegee SK. If the thickness of the mask M2 is large, multiple first solids 30 may enter a single hole OP2. For this reason, the thickness of the mask M2 is preferably 0.5 times or more and 1.1 times or less the diameter of the first solid 30, and more preferably 0.8 times or more and 1.0 times or less the diameter.

[0036] Furthermore, if the diameter of hole OP2 is small, the positioning accuracy of the first solid 30 improves, but it becomes difficult for the first solid 30 to enter hole OP2. If the diameter of hole OP2 is large, the positioning accuracy of the first solid 30 decreases, and there is a possibility that multiple first solid 30s may enter a single hole OP2. For this reason, the diameter of hole OP2 is preferably 1.05 times or more and 1.2 times or less the diameter of the first solid 30, and more preferably 1.1 times or more and 1.15 times or less the diameter.

[0037] The sidewall of hole OP2 may be parallel to the thickness direction (Z direction in the drawing) of mask M2, or it may be inclined with respect to the thickness direction. For example, the sidewall may be inclined with respect to the thickness direction in a range of 1 degree to 10 degrees.

[0038] Finally, as shown in Figure 4G, the mask M2 is separated from the first surface S1. By providing adhesion to the first surface S1 in advance in this way, the first solid 30 can be accurately positioned in a specific area on the first surface S1, and the occurrence of displacement of the first solid 30 can be reduced.

[0039] In this specification, "placing the first solid 30 on the first surface S1" includes cases where the first solid 30 is directly placed on the first surface S1 of the resin layer 10, or where the first solid 30 is indirectly placed using adhesive A or the like. Furthermore, "placing the first solid 30 on the first surface S1" also includes cases where the first solid 30 is directly or indirectly bonded to the first surface S1 of the resin layer 10.

[0040] After the step of placing the first solid 30 is performed, it may be checked whether the first solid 30 is actually placed on the first surface S1.

[0041] Figure 5A is a schematic diagram showing the inspection process. Figure 5B is a schematic diagram showing an example of an image obtained during the inspection. For example, as shown in Figure 5A, a light source 71, an imaging device 72, and an inspection device 73 are used for the inspection. The light source 71 irradiates light L onto the intermediate body 5 on which the first solid body 30 is placed. The imaging device 72 is equipped with an image sensor and captures an image of the intermediate body 5. The inspection device 73 is equipped with a processor, memory, various interfaces, etc., and controls the light source 71 and the imaging device 72.

[0042] When the resin layer 10 is transparent or translucent, as shown in Figure 5A, the light source 71 irradiates the intermediate body 5 with light L from the second surface S2 side, and the imaging device 72 photographs the intermediate body 5 from the first surface S1 side. The imaging device 72 acquires an image based on the light transmitted through the intermediate body 5. In this case, the resin layer 10 transmits light L, but the conductive member 20 and the first solid body 30 block the light L. Therefore, as shown in Figure 5B, in the image IMG acquired by the imaging device 72, the resin layer 10 appears relatively white, and the conductive member 20 and the first solid body 30 appear relatively black.

[0043] The imaging conditions of the imaging device 72 are set appropriately according to the positional relationship between the intermediate object 5 and the imaging device 72, the optical characteristics of the imaging device 72, etc. For example, the imaging magnification is set between 5x and 50x so that one intermediate object 5 fits in one field of view. If the size of the intermediate object 5 is large and it does not fit in one field of view, the imaging device 72 may be scanned to photograph the intermediate object 5.

[0044] When the intermediate object 5 is photographed by the imaging device 72, the inspection device 73 receives the image from the imaging device 72. The inspection device 73 may perform image processing as appropriate. For example, image processing such as halation removal, noise reduction, smoothing, binarization, and edge detection may be performed. The inspection device 73 also refers to a pre-prepared template image.

[0045] The template image is an image of the intermediate body 5 when the first solid body 30 is properly positioned. For example, the inspection device 73 calculates the similarity between the received image and the template image. Pattern matching can be used to calculate the similarity. If the similarity is above a predetermined threshold, the inspection device 73 determines that the first solid body 30 is properly positioned on the first surface S1. If the similarity is below the threshold, the inspection device 73 determines that the first solid body 30 is not positioned on the first surface S1. If it is determined that the first solid body 30 is not positioned, the step of positioning the first solid body 30 may be performed again.

[0046] Figure 5A illustrates the case where the resin layer 10 is light-transmitting. If the resin layer 10 is thick and does not transmit light, or if the resin layer 10 contains a light-reflecting material, the light source 71 and the imaging device 72 may be provided on the first surface S1 side. The light source 71 irradiates the intermediate body 5 with light L from the first surface S1 side, and the imaging device 72 acquires an image based on the reflected light from the intermediate body 5. In this case as well, similar to the example described above, the presence or absence of the first solid body 30 on the first surface S1 can be checked based on the similarity between the acquired image and the template image.

[0047] The first solid body 30 comprises at least one selected from the group consisting of diamond, silicon carbide, boron nitride, and nanocarbon. From the viewpoint of improving thermal conductivity, the first solid body 30 is preferably made of diamond.

[0048] The diamond used in this embodiment may be an artificially manufactured industrial diamond. Diamond has higher hardness and a lower coefficient of thermal expansion than the metal used in the substrate. Therefore, by placing diamond in the resin layer 10, thermal shrinkage of the substrate 1 and the occurrence of cracks can be reduced. In addition, the thermal conductivity of diamond is higher than that of metal and is isotropic in the direction of thermal conduction. Therefore, by placing diamond in the resin layer 10, the heat dissipation of the substrate 1 can be improved. The shape of the diamond may be, for example, a sphere or a polyhedron, and may be a polyhedron close to a sphere.

[0049] Here, the structure of the diamond E used as the first solid 30 will be described. Figures 6A to 6C are schematic cross-sectional views showing examples of diamond E. In the example shown in Figure 6A, diamond E1 is a diamond particle 61. The shape of the diamond particle 61 is, for example, a polyhedron with cleavage planes. Diamond E may also be a composite particle having diamond particles 61 and a plating layer covering the diamond particles 61. For example, as shown in Figure 6B, diamond E may be a composite particle E2 having diamond particles 61 and a nickel plating layer 62 covering the diamond particles 61. Also, as shown in Figure 6C, diamond E may be a composite particle E3 having diamond particles 61, a nickel plating layer 62 covering the diamond particles 61, and a copper plating layer 63 covering the nickel plating layer 62. In particular, by including diamond particles in the composite particle, excellent thermal conductivity can be obtained. In addition, because the diamond particles 61 are coated with a metal film such as a plating layer, the adhesion to the metal layer 52 described later is improved. In this embodiment, the diamond E1 consisting of diamond particles 61, composite particles E2, and composite particles E3 are collectively referred to as diamond E.

[0050] Next, as shown in Figure 3G, the intermediate body 5 on which the first solid body 30 is placed is positioned between the plate 45 and the plate 46. In this state, the plate 45 and the plate 46 are brought closer together. This pressurizes the intermediate body 5 and the first solid body 30 in a direction that causes them to press against each other. For example, the intermediate body 5 and the first solid body 30 are pressurized within a range of 8 MPa to 10 MPa. The first solid body 30 has high hardness. When the resin layer 10 is pressed against the first solid body 30, a part of the resin layer 10 deforms, and at least a part of the first solid body 30 penetrates into the resin layer 10. In addition, the paste-like conductive member 20 hardens due to the pressurization, and a solid conductive member 20 is obtained.

[0051] Since the paste-like conductive member 20 contains metal particles, when the paste-like conductive member 20 is pressurized, the dimension of the conductive member 20 in the Z direction shortens, and the density of the metal particles contained in the conductive member 20 increases. The higher the density of the metal particles in the conductive member 20, the higher the thermal conductivity of the conductive member 20 can be. In order to increase the density of the conductive member 20, it is preferable that the dimension D2 of the conductive member 20 is longer than the dimension D1 of the resin layer 10, as shown in Figure 3D. In this case, pressurization compresses the dimension D2 of the conductive member 20 to approximately the dimension D1 of the resin layer 10. The density of the conductive member 20 increases, and the thermal conductivity of the conductive member 20 can be increased. For example, the dimension D2 is set to be between 1.1 and 1.5 times the dimension D1.

[0052] When pressurizing the intermediate 5 and the first solid 30, the temperatures of plates 45 and 46 are increased to heat the intermediate 5 and the first solid 30. In this embodiment, the resin layer 10 and the first solid 30 are heated while being pressurized and held at a constant pressure and temperature for a predetermined time. This causes the resin material of the resin layer 10 to adhere closely to the placed first solid 30, thereby increasing the adhesion between the resin layer 10 and the first solid 30. In addition, the conductive member 20 is hardened by heating, and the density of the conductive member 20 increases further. For example, the intermediate 5 and the first solid 30 are heated within a range of 150°C to 350°C.

[0053] The resin layer 10 is uncured when not heated. By pressurizing the resin layer 10 and the first solid 30 with plates 45 and 46, a portion of the conductive member 20 is also positioned on the first surface S1 and the second surface S2 of the resin layer 10, as shown in Figure 3H. The fibrous material 15 pressed by the first solid 30 concentrates on the -Z side of the resin layer 10. Because the resin layer 10 is fluid in its uncured state, it moves around the first solid 30 and to the +Z side where the density of the fibrous material 15 is lower. Furthermore, heating while pressurizing causes the resin layer 10 to harden in its deformed shape. Through these steps, the first solid 30 is positioned within the resin layer 10, as shown in Figure 3H. That is, the steps shown in Figures 3F to 3G correspond to the first solid positioning step P2 shown in Figure 2. Furthermore, through the steps shown in Figures 3A to 3G, the conductive member 20 and the first solid 30 are positioned within the resin layer 10, and the substrate 1 is obtained.

[0054] To improve the flatness of the substrate 1, a polishing process of the substrate 1 is performed. When polishing the substrate 1, as shown in Figure 3H, it is preferable that the dimension D3 of the first solid body 30 in the Z direction is shorter than the dimension D1 of the resin layer 10 in the Z direction. If dimension D3 is longer than dimension D1, the first solid body 30 will protrude from at least one of the upper or lower surfaces of the resin layer 10. Since the first solid body 30 has high hardness, it becomes difficult to polish the resin layer 10 by the first solid body 30. By making dimension D3 shorter than dimension D1, it is possible to achieve a state in which the first solid body 30 does not protrude from any surface of the resin layer 10.

[0055] As a result of polishing, as shown in Figure 3I, the first surface S1, one end of the conductive member 20 in the Z direction, and one end of the first solid body 30 in the Z direction are aligned side by side along the XY plane. Also, the second surface S2, the other end of the conductive member 20 in the Z direction, and the other end of the first solid body 30 in the Z direction are aligned side by side along the XY plane. Polishing yields a substrate 1 with excellent flatness.

[0056] After polishing, other surface treatments may be performed as appropriate, depending on the semiconductor elements to be placed on the substrate 1. If a large substrate with multiple components of the substrate 1 is manufactured, the large substrate may be cut after the polishing process to obtain multiple substrates 1.

[0057] As a reference example of a manufacturing method, when placing the first solid body 30, a method can be considered in which a hole is formed in the resin layer 10 and the first solid body 30 is placed inside the hole. When this method is implemented, it is necessary to set a margin in the dimensions of the hole, taking into account the dimensional error of the hole, the dimensional error of the first solid body 30, etc. As a result, when the first solid body 30 is placed inside the hole, a gap may be created between the first solid body 30 and the inner surface of the hole. Since the first solid body 30 has high hardness, it is difficult to press-deform it to adhere tightly to the resin layer 10 like the conductive member 20. According to the manufacturing method of this embodiment, by pressurizing the first solid body 30, at least a part of the first solid body 30 is placed inside the resin layer 10. Therefore, the gap between the first solid body 30 and the resin layer 10 can be made smaller compared to when a hole is formed and the first solid body 30 is placed inside it. According to this embodiment, the thermal conductivity between the resin layer 10 and the first solid body 30 can be improved, and the heat dissipation of the substrate 1 can be further enhanced. Furthermore, the gap between the resin layer 10 and the first solid body 30 becomes smaller, and the adhesion between the resin layer 10 and the first solid body 30 improves, making it less likely for the first solid body 30 to detach from the substrate 1.

[0058] Furthermore, regarding the manufacturing method for the reference example, a method in which the resin layer 10 is heated after placing the first solid 30 in the hole is also conceivable. By increasing the fluidity of the resin through heating, the adhesion between the resin layer 10 and the first solid 30 can be improved. However, with this method, the density of the resin around the first solid 30 decreases due to the void between the resin layer 10 and the first solid 30. Although the thermal conductivity between the resin layer 10 and the first solid 30 is improved, the decrease in resin density reduces the thermal conductivity of the resin layer 10 around the first solid 30. In addition, the decrease in resin density reduces the strength of the resin layer 10 around the first solid 30.

[0059] According to this embodiment, because the void between the resin layer 10 and the first solid body 30 is small, the density of the resin around the first solid body 30 is less likely to decrease. By suppressing the decrease in resin density, the thermal conductivity of the resin layer 10 around the first solid body 30 can be improved, and the strength of the resin layer 10 can be improved compared to the reference example.

[0060] When the first solid 30 is placed inside the resin layer 10 by pressurization, it is preferable that the first solid 30 is sufficiently harder than the resin layer 10. For example, it is preferable that the hardness of the first solid 30 is 13 or higher on the new Mohs hardness scale, and the hardness of the resin layer 10 at room temperature is approximately M80-M100 on the Rockwell hardness scale, indicating a difference in hardness. Rockwell hardness is measured in accordance with JIS Z 2245, 2021. JIS Z 2245, 2021 corresponds to ISO 6508-1.

[0061] The substrate 1 comprises a conductive member 20 and a first solid body 30. The conductive member 20 has a higher thermal conductivity than the resin layer 10. The first solid body 30 has a higher thermal conductivity than both the resin layer 10 and the conductive member 20. For example, when a semiconductor element such as a light-emitting element or a circuit element is placed on the conductive member 20 and the first solid body 30, the heat generated by the semiconductor element is efficiently dissipated through the conductive member 20 and the first solid body 30. By including the conductive member 20 and the first solid body 30 in the substrate 1, the heat dissipation performance of the substrate 1 can be improved.

[0062] Furthermore, in this embodiment, the first solid body 30 is located in the center of the XY plane of the substrate 1. The first solid body 30 may be located anywhere other than the center of the XY plane of the substrate 1. When a semiconductor element is placed on the conductive member 20 and the first solid body 30, heat from the semiconductor element is more easily transferred to the first solid body 30 than to the conductive member 20. Here, the thermal expansion coefficient of the first solid body 30 is smaller than that of the conductive member 20. The difference in thermal expansion coefficients between the first solid body 30 and the semiconductor element is smaller than the difference in thermal expansion coefficients between the conductive member 20 and the semiconductor element. By using the first solid body 30, when the temperature of the first solid body 30 rises due to the heat of the semiconductor element, the thermal stress between the first solid body 30 and the semiconductor element can be reduced. For example, the occurrence of cracks in the bonding member between the first solid body 30 and the semiconductor element can be reduced.

[0063] The diameter of the first solid body 30 is appropriately designed according to the thickness and top view dimensions of the resin layer 10, the dimensions of the semiconductor element to be placed on the first solid body 30, and so on. When the first solid body 30 is diamond E, the "diameter" is the diameter of the smallest sphere that circumscribes the particle. The larger the diameter of the first solid body 30, the higher the thermal conductivity of the substrate 1 can be. For this reason, the diameter of the first solid body 30 is preferably 50 μm or more. On the other hand, if the diameter of the first solid body 30 is excessively large, it becomes difficult to place the first solid body 30 inside the resin layer 10, or the deformation of the resin layer 10 becomes excessively large. As a result, the difficulty of the first solid body placement step P2 increases. For this reason, the diameter of the first solid body 30 is preferably about the same as the thickness of the resin layer 10, and preferably 500 μm or less. More preferably, as described above, the diameter of the first solid body 30 is slightly smaller than the thickness of the resin layer 10. As a result, when polishing the substrate 1 as described above, it is possible to avoid the polishing being hindered by the first solid body 30. For example, before polishing, it is most preferable that the diameter of the first solid body 30 is smaller than the thickness of the resin layer 10, and the difference between the diameter of the first solid body 30 and the thickness of the resin layer 10 is less than 10% of the thickness of the resin layer 10.

[0064] The diameter of diamond E can be determined by image analysis of cross-sectional observation photographs or by sorting using a sieve. For example, in scanning electron microscopy energy-dispersive X-ray spectroscopy (SEM-EDX), diamond E appears whiter than the resin layer 10. By extracting the white area from the image and measuring its dimensions, the diameter of diamond E can be obtained. Alternatively, diamond E can be cut from the substrate 1 and observed using an optical microscope, SEM (scanning electron microscope), or SEM-EDX. By measuring the dimensions of diamond E, the diameter of diamond E can be obtained. The extracted diamond E can also be sieved through a mesh. The diamond E can be sieved sequentially from a fine mesh to a coarse mesh. The diameter of diamond E can be estimated from the mesh size at which the diamond E passes through the mesh.

[0065] Figure 7 is a schematic cross-sectional view showing an enlarged view of the vicinity of the first solid body and the conductive member in Figure 3I. The fibrous material 15 has a higher bending strength than the resin layer 10 and deforms under the influence of the pressure exerted by the first solid body 30 during pressurization. Therefore, when the intermediate body 5 and the first solid body 30 are pressurized, the fibrous material 15 is less likely to break even when in contact with the first solid body 30. In the resin layer 10, the fibrous material 15, which was arranged substantially uniformly along the XY plane, is pushed by the first solid body 30 and biased towards the second surface S2. As a result, as shown in Figure 7, a bias in the arrangement of the fibrous material 15 occurs in the Z direction near the first solid body 30. Subsequent polishing removes the fibrous material 15 near the surface of the second surface S2.

[0066] Specifically, the resin layer 10 includes a first portion 11 and a second portion 12 located near the first solid body 30. The first portion 11 and the second portion 12 are in contact with the first solid body 30 and are aligned in the Z direction. The first portion 11 is located between the first surface S1 and the second portion 12. The second portion 12 is located between the second surface S2 and the first portion 11. The density of the fibrous material 15 in the second portion 12 is greater than the density of the fibrous material 15 in the first portion 11.

[0067] On the other hand, the holes H for arranging the conductive member 20 are formed by drilling or laser. When the holes H are formed, the fibrous material 15 breaks. Therefore, uneven distribution of the fibrous material 15 is unlikely to occur near the conductive member 20. For example, as shown in Figure 7, the resin layer 10 includes a third portion 13 and a fourth portion 14 located near the conductive member 20. The third portion 13 and the fourth portion 14 are in contact with the first solid body 30 and are aligned in the Z direction. The position of the third portion 13 in the Z direction is the same as the position of the first portion 11 in the Z direction. The position of the fourth portion 14 in the Z direction is the same as the position of the second portion 12 in the Z direction. The density of the fibrous material 15 in the third portion 13 and the density of the fibrous material 15 in the fourth portion 14 are substantially equal. Therefore, the difference between the density of the fiber material 15 in the third part 13 and the density of the fiber material 15 in the fourth part 14 is smaller than the difference between the density of the fiber material 15 in the second part 12 and the density of the fiber material 15 in the first part 11.

[0068] Any semiconductor element can be placed on the substrate 1. The conductive member 20 can be used as a current path to supply current to the placed semiconductor element. For example, when alternating current is supplied to the semiconductor element, an alternating electric field is generated around the conductive member 20. When a high-frequency signal flows through the conductive member 20, a high-frequency alternating electric field is generated around the conductive member 20. Here, the relative permittivity of the resin layer 10 is different from the relative permittivity of the fiber material 15. If there is a bias in the fiber material 15 around the conductive member 20, as shown in the first part 11 and second part 12 in Figure 7, a bias will also occur in the relative permittivity. A bias in relative permittivity increases the disturbance of the electric field and leads to an increase in transmission loss. By having a small bias in the fiber material 15, as shown in the third part 13 and fourth part 14 in Figure 7, the bias in relative permittivity in the Z direction around the conductive member 20 can be reduced. In other words, according to this embodiment, the heat dissipation of the substrate 1 can be improved by the first solid body 30 while reducing transmission loss in the conductive member 20.

[0069] Furthermore, if there is a difference in density of the fiber material 15 in the Z direction, the thermal expansion coefficient of the denser parts of the fiber material 15 will be smaller than that of the less dense parts. For example, in the substrate 1 shown in Figure 7, the thermal expansion coefficient of the resin layer 10 on the second surface S2 side is smaller than that of the resin layer 10 on the first surface S1 side around the first solid body 30. By placing the semiconductor element on the second surface S2 where the density of the fiber material 15 is higher, distortion and shrinkage of the substrate 1 caused by thermal fluctuations from room temperature to high temperature can be reduced. For example, when the semiconductor element is placed on the second surface S2 via solder, the occurrence of cracks in the solder can be reduced.

[0070] (modified version) Figure 8A is a schematic top view showing a substrate according to a modified embodiment. Figure 8B is a schematic cross-sectional view taken along the line VIIIB-VIIIB in Figure 8A.

[0071] The substrate 1a shown in Figures 8A and 8B comprises a plurality of first solid bodies 30. The plurality of first solid bodies 30 are located in the central part of the substrate 1a in a top view and are arranged apart from each other. In the illustrated example, four first solid bodies 30 are arranged. Not limited to the illustrated example, the substrate 1a may have two or three first solid bodies 30, or five or more first solid bodies 30. The plurality of conductive members 20 are arranged around the plurality of first solid bodies 30 in the XY plane. In the example shown in Figure 8A, the four conductive members 20 are arranged near the four corners of the rectangular substrate 1a in a top view. The substrate 1a comprising a plurality of first solid bodies 30 is advantageous in that when semiconductor elements arranged on the substrate 1a generate heat locally during operation, or when a plurality of semiconductor elements are arranged on the plurality of first solid bodies 30 of the substrate 1a, heat dissipation paths can be distributed and arranged at desired locations. The manufacturing method according to the above embodiment can be applied to the manufacturing method of the substrate 1a.

[0072] (Light-emitting device) Figure 9A is a schematic top view showing a light-emitting device according to an embodiment. Figure 9B is a schematic cross-sectional view taken along the line IXB-IXB in Figure 9A.

[0073] The light-emitting device 2 according to this embodiment comprises a substrate 1, metal layers 50-53, bonding members 54 and 55, and a light-emitting element 56. In Figure 9A, the conductive member 20, the first solid body 30, and the light-emitting element 56 are shown by dashed lines. As shown in Figures 9A and 9B, the light-emitting device 2 may further have a fluorescent member 57 containing a phosphor capable of converting the wavelength of light emitted from the light-emitting element 56. It may also have a covering member 58 that covers at least the sides of the light-emitting element 56.

[0074] Substrate 1 is manufactured by the first manufacturing method described above. Substrate 1a shown in Figures 8A and 8B may be used instead of substrate 1.

[0075] Metal layers 50 and 51 are arranged on the upper and lower surfaces of the conductive member 20, respectively. Metal layers 52 and 53 are arranged on the upper and lower surfaces of the first solid body 30, respectively. Metal layers 50 to 53 are thin films of metal containing nickel, palladium, or gold, etc.

[0076] The joining member 54 is placed on the metal layer 50. The joining member 55 is placed on the metal layer 52. The joining members 54 and 55 are, for example, solder. By placing the metal layer 50 on the upper surface of the conductive member 20, the wettability to the joining member 54 is improved. Also, by placing the metal layer 52 on the upper surface of the first solid body 30, the wettability to the joining member 55 is improved.

[0077] The light-emitting element 56 is placed on the conductive member 20 and the first solid body 30 via bonding members 54 and 55. The surface on which the light-emitting element 56 is placed may be either the first or second surface of the substrate 1. The light-emitting element 56 has a light-emitting surface 56a on its upper surface. The light-emitting element 56 also has at least a pair of positive and negative element electrodes 56b and at least one auxiliary pad 56c on the surface opposite to the light-emitting surface 56a located on the -Z side. Each element electrode 56b is electrically connected to either of the conductive members 20 via the metal layer 50 and the bonding member 54. In Figure 9B, the metal layer 50 and the metal layer 51 are formed to be larger than the dimensions of the element electrodes 56b of the light-emitting element 56. At least one auxiliary pad 56c is connected to the first solid body 30 via the metal layer 52 and the bonding member 55. In this embodiment, one auxiliary pad 56c is connected to one first solid body 30. For example, in the substrate 1a shown in Figures 8A and 8B, multiple first solid bodies 30 may be connected to a common auxiliary pad 56c. If the light-emitting element 56 has multiple auxiliary pads 56c, multiple first solid bodies 30 may be connected to their respective corresponding auxiliary pads 56c.

[0078] The light-emitting element 56 has various semiconductors such as III-V compound semiconductors and II-VI compound semiconductors. The light-emitting element 56 may be an LED (Light Emitting Diode) or an LD (Laser Diode). As for the semiconductor, In X Al Y Ga 1-X-YIt is preferable to use nitride semiconductors such as N(0≦X, 0≦Y, X+Y≦1), and InN, AlN, GaN, InGaN, AlGaN, InGaAlN, etc. can also be used. The light-emitting element 56 includes an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer disposed between them. The p-type semiconductor layer of the light-emitting element 56 is electrically connected to one of the plurality of conductive members 20. The n-type semiconductor layer of the light-emitting element 56 is electrically connected to another of the plurality of conductive members 20. The emission peak wavelength of the light-emitting element 56 is preferably 400 nm to 530 nm, more preferably 400 nm to 490 nm, and even more preferably 440 nm to 475 nm, from the viewpoint of luminous efficiency, excitation of the phosphor described later, and the color mixing relationship with the emission of the phosphor.

[0079] In the example shown in Figure 9A, one light-emitting device 2 comprises one light-emitting element 56. One light-emitting device 2 may comprise multiple light-emitting elements 56. The shape of the light-emitting surface 56a in a top view is approximately rectangular. The shape of the light-emitting surface 56a in a top view may be approximately circular or elliptical, or it may be a polygon such as an approximately triangular or approximately hexagonal.

[0080] The fluorescent member 57 is, for example, a substantially rectangular member in a top view and is arranged to cover the light emitting surface 56a. The fluorescent member 57 contains a phosphor and has translucency. The fluorescent member 57 preferably transmits 60% or more of the light from the light emitting element 56. For example, the fluorescent member 57 can be formed using a translucent inorganic substance such as a resin material, ceramics, or glass. As the resin material, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, an epoxy-modified resin, or a phenolic resin can be used. In particular, a silicone resin or its modified resin having excellent light resistance and heat resistance is suitable. Alternatively, a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin can be used for the fluorescent member 57. The fluorescent member 57 may further contain a light diffusing substance. The phosphor contained in the fluorescent member 57 wavelength-converts at least a part of the light emitted from the light emitting element 56. For example, the fluorescent member 57 may be a resin material, ceramics, glass, etc. containing a phosphor, or a sintered body of a phosphor. Further, the fluorescent member 57 may be a multilayer member in which a resin layer containing a phosphor and a light diffusing substance is disposed on the upper surface or the lower surface of a molded body such as resin, ceramics, or glass.

[0081] Examples of the phosphor include yttrium aluminum garnet-based phosphors (e.g., (Y,Gd)3(Al,Ga)5O 12 :Ce), lutetium aluminum garnet-based phosphors (e.g., Lu3(Al,Ga)5O 12 :Ce), terbium aluminum garnet-based phosphors (e.g., Tb3(Al,Ga)5O 12 :Ce), CCA-based phosphors (e.g., Ca 10 (PO4)6Cl2:Eu), SAE-based phosphors (e.g., Sr4Al 14 O 25 :Eu), chlorosilicate-based phosphors (e.g., Ca8MgSi4O 16 Cl2:Eu), silicate-based phosphors (e.g., (Ba,Sr,Ca,Mg)2SiO4:Eu), β-sialon-based phosphors (e.g., (Si,Al)3(O,N)4:Eu) or α-sialon-based phosphors (e.g., Ca(Si,Al)12 (O,N) 16 Oxynitride phosphors such as (O,N):Eu), LSN phosphors (e.g., (La,Y)3Si6N 11 :Ce), BSESN phosphors (e.g., (Ba,Sr)2Si5N8:Eu), SLA phosphors (e.g., SrLiAl3N4:Eu), CASN phosphors (e.g., CaAlSiN3:Eu) or SCASN phosphors (e.g., (Sr,Ca)AlSiN3:Eu), nitride phosphors such as KSF phosphors (e.g., K2SiF6:Mn), KSAF phosphors (e.g., K2(Si 1-x Al x )F 6-x :Mn where x satisfies 0 < x < 1), or fluoride phosphors such as MGF phosphors (e.g., 3.5MgO·0.5MgF2·GeO2:Mn), quantum dots having a perovskite structure (e.g., (Cs,FA,MA)(Pb,Sn)(F,Cl,Br,I)3 where FA and MA represent formamidinium and methylammonium, respectively), II-VI group quantum dots (e.g., CdSe), III-V group quantum dots (e.g., InP), or quantum dots having a chalcopyrite structure (e.g., (Ag,Cu)(In,Ga)(S,Se)2) can be used.

[0082] As an example, the light-emitting element 56 emits blue light. The fluorescent member 57 includes a phosphor that absorbs blue light and emits red light, and a phosphor that absorbs blue light and emits green light. Alternatively, the fluorescent member 57 may include a phosphor that absorbs blue light and emits yellow light. In the present embodiment, the light-emitting device 2 emits white light.

[0083] The covering member 58 is positioned to cover the sides of the light-emitting element 56 and the fluorescent element 57. The covering member 58 directly or indirectly covers the sides of the light-emitting element 56 and the fluorescent element 57. The upper surface of the fluorescent element 57 is exposed from the covering member 58 and is the light-emitting surface of the light-emitting device 2. The covering member 58 is also further positioned between the resin layer 10 and the light-emitting element 56. The covering member 58 reflects the light emitted from the light-emitting element 56 toward the covering member 58. The covering member 58 is integrally formed from, for example, a white resin material. Preferably, the covering member 58 is made of a material with high light reflectivity in order to improve light extraction efficiency. For example, the covering member 58 can be made of an organic material such as a resin containing a light-reflective substance such as a white pigment. Alternatively, the covering member 58 may be a light-reflective member made of an inorganic material containing, for example, boron nitride or alkali metal silicate. In this case, it may further contain titanium oxide or zirconium oxide.

[0084] Examples of light-reflecting materials include titanium dioxide, zinc oxide, magnesium oxide, magnesium carbonate, magnesium hydroxide, calcium carbonate, calcium hydroxide, calcium silicate, magnesium silicate, barium titanate, barium sulfate, aluminum hydroxide, aluminum oxide, zirconium oxide, silicon oxide, etc. One of these can be used alone, or two or more can be used in combination. Furthermore, among the organic materials, it is preferable to use a resin material mainly composed of thermosetting resins such as epoxy resin, epoxy-modified resin, silicone resin, silicone-modified resin, and phenolic resin as the base material. The covering member 58 may be made of a material that is transparent to or absorbs visible light as needed.

[0085] If the light-emitting device 2 includes a plurality of light-emitting elements 56 and fluorescent members 57 arranged on each light-emitting element 56, the covering member 58 may be placed between adjacent light-emitting elements 56 and between adjacent fluorescent members 57, integrally covering the plurality of light-emitting elements 56 and the plurality of fluorescent members 57.

[0086] Figures 10A to 10C are schematic diagrams illustrating a method for manufacturing a light-emitting device according to an embodiment. First, the first step described above is carried out to manufacture the substrate 1. Electroless plating (displacement plating) is then performed on the substrate 1. As a result, metal layers 50-53 are formed on the upper surface of the conductive member 20, the lower surface of the conductive member 20, the upper surface of the first solid body 30, and the lower surface of the first solid body 30, respectively, as shown in Figure 10A. Instead of electroless plating, electrolytic plating may be performed by bringing wiring for power supply into contact with the conductive member 20 and the first solid body 30.

[0087] A bonding member 54 is placed on the metal layer 50, and a bonding member 55 is placed on the metal layer 52. As shown in Figure 10B, a light-emitting element placement step is performed in which the light-emitting element 56 is placed on the first solid body 30 and the conductive member 20. Specifically, the light-emitting element 56 is placed on the bonding member 55 on the first solid body 30 and on the bonding member 54 on the conductive member 20. At this time, the light-emitting element 56 is placed such that the positive element electrode 56b and the negative element electrode 56b of the light-emitting element 56 are connected to the conductive member 20, and the auxiliary pad 56c is connected to the first solid body 30. The bonding members 54 and 55 are melted by heating, and the light-emitting element 56 is joined to the conductive member 20 and the first solid body 30.

[0088] A fluorescent member 57 is placed on top of the light-emitting element 56. The light-emitting element 56 and the fluorescent member 57 may be directly joined together or indirectly joined together by an adhesive member. Then, white resin is placed in the gap between the resin layer 10 and the light-emitting element 56, around the light-emitting element 56, and around the fluorescent member 57, and the resin is cured. For example, compression molding and transfer molding can be used as the resin molding method. If white resin is provided on the upper surface of the fluorescent member 57, the white resin is removed by grinding to expose the fluorescent member 57. This forms a covering member 58, as shown in Figure 10C.

[0089] The coating member 58 may be made of a mixture containing, for example, boron nitride and alkali metal silicate instead of a white resin. This mixture can be prepared by mixing a powder mixture of boron nitride powder and silicon oxide powder with an alkaline solution (for example, potassium hydroxide) and then heating and curing it. When the alkaline solution is potassium hydroxide, heating and curing causes a reaction between silicon oxide and potassium hydroxide to produce potassium silicate, which is an alkali metal silicate. Boron nitride is a material that can reduce the shrinkage of the mixture during heating and curing. Aluminum oxide can be used instead of boron nitride.

[0090] By the above steps, the light-emitting device 2 according to the embodiment is manufactured. When a large substrate having multiple components of the substrate 1 is manufactured, multiple light-emitting elements 56 may be arranged on the large substrate. In that case, multiple light-emitting devices 2 may be obtained by cutting the substrate so that each light-emitting device includes at least one light-emitting element 56.

[0091] The methods for manufacturing a substrate and a light-emitting device described herein can provide a substrate in which a solid having a higher thermal conductivity than a conductive material can be easily placed in a resin layer, and a light-emitting device equipped with a substrate in which a solid having a higher thermal conductivity than a conductive material is placed in a resin layer. Therefore, it is suitably applicable to substrates used in light-emitting devices for automotive light sources, lighting light sources, various indicator light sources, display light sources, liquid crystal backlight light sources, traffic lights, automotive components, signboard channel letters, etc. However, the substrates and light-emitting devices manufactured by the methods for manufacturing a substrate and a light-emitting device described herein can be applied to substrates and light-emitting devices used in a variety of applications.

[0092] This disclosure includes the following embodiments. (Section 1) A method for manufacturing a substrate comprising a resin layer, a conductive member disposed within the resin layer, and a first solid having a higher thermal conductivity than the conductive member, A preparation step of preparing an intermediate body including the resin layer having a first surface and a second surface opposite to the first surface, A first solid body placement step involves placing the first solid body directly or indirectly on the first surface and pressurizing the intermediate and the first solid body to place at least a portion of the first solid body into the resin layer, A method for manufacturing a substrate, comprising: (Section 2) The method for manufacturing a substrate according to item 1, wherein the intermediate includes the conductive member. (Section 3) The method for manufacturing a substrate according to claim 1, wherein the preparation step includes a step of preparing the resin layer and a conductive member placement step of arranging the conductive member in the resin layer. (Section 4) The method for manufacturing a substrate according to any one of claims 1 to 3, wherein the first solid body arrangement step includes a step of heating the resin layer and the first solid body under pressure. (Section 5) A method for manufacturing a substrate according to any one of claims 1 to 4, wherein in the first solid body placement step, adhesiveness is provided to a part of the first surface and the first solid body is adhered to the part of the first surface. (Section 6) A method for manufacturing a substrate according to any one of claims 1 to 5, wherein the first solid body comprises at least one selected from the group consisting of diamond, silicon carbide, boron nitride, and nanocarbon. (Section 7) A method for manufacturing a substrate according to any one of items 1 to 6, wherein the diameter of the first solid body is 50 μm or more and 500 μm or less. (Section 8) The bending strength of the resin layer in the intermediate prepared in the above preparation step is 450 N / mm 2 More than 550N / mm 2 A method for manufacturing a substrate as described in any one of items 1 to 7 below. (Section 9) The method for manufacturing a substrate according to any one of claims 1 to 8, wherein the conductive member contains copper. (Section 10) A method for manufacturing a substrate as described in any one of items 1 to 9, A light-emitting element placement step involves arranging the light-emitting element on the first solid body and the conductive member, A method for manufacturing a light-emitting device, comprising the above.

[0093] The embodiments described above are examples of the present disclosure, and the disclosure is not limited to these embodiments. For example, the present disclosure also includes the addition, deletion, or modification of some components or processes in the embodiments described above. Furthermore, the embodiments described above can be implemented in combination with each other. [Explanation of Symbols]

[0094] 1,1a: Substrate 2: Light-emitting device 5: Intermediate 10: Resin layer 11:First part 12:Second part 13: Third part 14: 4th part 15: Fiber materials 20: Conductive material 30: First solid 41,42: Film 43: Metal Mask 44: Squeegee 45,46: Plate 50~53: Metal layer 54, 55: Joining members 56: Light-emitting element 56a: Light-emitting surface 56b: Element electrode 56c: Auxiliary pad 57: Fluorescent material 58: Covering material 61: Diamond particles 62: Nickel plating layer 63: Copper plating layer A: Adhesive D1~D3: Dimensions E, E1~E3: Diamond H: Hole M1, M2: Mask OP1,OP2:hole P1: Preparation process P2: First Solid Configuration Project P3: Conductive Component Configuration Engineering S1: Page 1 S2: Page 2 SK:スキージ

Claims

1. A method for manufacturing a substrate comprising a resin layer, a conductive member disposed within the resin layer, and a first solid having a higher thermal conductivity than the conductive member, A preparation step of preparing an intermediate body including the resin layer having a first surface and a second surface opposite to the first surface, A first solid body placement step involves placing the first solid body directly or indirectly on the first surface and pressurizing the intermediate and the first solid body to place at least a portion of the first solid body into the resin layer. A method for manufacturing a substrate, comprising:

2. The method for manufacturing a substrate according to claim 1, wherein the intermediate includes the conductive member.

3. The method for manufacturing a substrate according to claim 1, wherein the preparation step includes a step of preparing the resin layer and a conductive member placement step of arranging the conductive member in the resin layer.

4. The method for manufacturing a substrate according to claim 1, wherein the first solid body arrangement step includes a step of heating the resin layer and the first solid body under pressure.

5. A method for manufacturing a substrate according to claim 1, wherein in the first solid body placement step, adhesiveness is provided to a part of the first surface and the first solid body is adhered to the part of the first surface.

6. The method for manufacturing a substrate according to claim 1, wherein the first solid body comprises at least one selected from the group consisting of diamond, silicon carbide, boron nitride, and nanocarbon.

7. The method for manufacturing a substrate according to claim 1, wherein the diameter of the first solid body is 50 μm or more and 500 μm or less.

8. The bending strength of the resin layer in the intermediate prepared in the above preparation step is 450 N / mm ２ More than 550N / mm ２ The method for manufacturing a substrate according to claim 1, which is as follows:

9. The method for manufacturing a substrate according to claim 1, wherein the conductive member contains copper.

10. A method for manufacturing a substrate according to any one of claims 1 to 9, A light-emitting element placement step involves arranging the light-emitting element on the first solid body and the conductive member, A method for manufacturing a light-emitting device, comprising the above.

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