Semiconductor laser element

The semiconductor laser element design with a defect layer and optimized thickness of the second semiconductor layer addresses COD by minimizing defect overlap, improving lifespan and reducing failure rates.

JP2026062540APending Publication Date: 2026-04-09NICHIA CORP
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-09-25
Publication Date
2026-04-09

AI Technical Summary

Technical Problem

Semiconductor laser elements with a window structure are prone to sudden failure due to Catastrophic Optical Damage (COD) caused by defects generated during operation.

Method used

A semiconductor laser element design with a defect layer between the first and second semiconductor layers, where the defect layer does not overlap with the near-field pattern of the laser beam, and the thickness of the second semiconductor layer is optimized to minimize overlap, using a III-V compound semiconductor layers with As and P, and a window structure formed by Zn diffusion or interdiffusion of Group III elements.

Benefits of technology

The design improves the lifespan of semiconductor laser elements by reducing COD-induced failure through minimized defect overlap and optimized thickness, enhancing optical confinement and reducing heat absorption.

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Abstract

To provide a semiconductor laser element with improved lifespan. [Solution] A semiconductor laser element comprising: a first semiconductor layer of a III-V compound semiconductor layer containing at least As as a group V element; a second semiconductor layer on the first conductive side of a III-V compound semiconductor layer containing at least P as a group V element, disposed on the first semiconductor layer; a third semiconductor layer on the second conductive side, disposed on the second semiconductor layer; an active layer disposed between the second and third semiconductor layers; a window structure formed across the third semiconductor layer, the active layer, the second semiconductor layer, and the first semiconductor layer; a defect layer containing defects between the first and second semiconductor layers in the region where the window structure is formed, and containing the group III elements of the first semiconductor layer and the group III elements of the second semiconductor layer; and an end face including the defect layer that emits laser light, wherein the defect layer does not overlap with the near-field pattern of the laser light at the end face, or overlaps only at the base of the near-field pattern at the end face.
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Citation Information

Patent Citations

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