Semiconductor equipment

Abstract

To provide a semiconductor device with improved dielectric strength. [Solution] The semiconductor device A1 comprises a first lead, a second lead, a first semiconductor element (control element 111), a second semiconductor element (drive element 112), an insulating element 12, a plurality of first lead terminals, a plurality of second lead terminals, a plurality of first wires, a plurality of second wires, a plurality of third wires, a plurality of fourth wires, and a plurality of fifth wires. The first lead includes a first die pad 21 and a plurality of first terminals (two first support terminals 51). The second lead includes a second die pad 22 and a plurality of second terminals (two second support terminals 52). Each of the plurality of first terminals has a first curved portion. The first curved portion is defined by two first edges that face each other in a plan view and are each continuously curved. Each of the two first edges is recessed in the same direction.

Description

Technical Field

[0001] The present invention relates to a semiconductor device that uses an insulating element to transmit signals between a plurality of semiconductor elements mounted in one package among semiconductor devices.

Background Art

[0002] For example, an inverter device mounted in an electric vehicle or a hybrid vehicle is required to convert a high-voltage DC power supply into AC power, so a semiconductor device equipped with an insulating element is used. The inverter device includes, for example, the semiconductor device and a plurality of switching elements such as an IGBT (Insulated Gate Bipolar Transistor) and a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). The semiconductor device includes a control element, an insulating element, and a drive element. In an inverter device of an electric vehicle, a control signal output from an ECU (Engine Control Unit) is input to the control element of the semiconductor device. The control element converts the control signal into a PWM (Pulse Width Modulation) control signal and transmits it to the drive element via the insulating element. The drive element drives a plurality of switching elements based on the PWM control signal. Thereby, the DC power of the in-vehicle battery is converted into three-phase AC power for motor drive.

[0003] In this semiconductor device, the power supply voltage supplied to the control element is low voltage (approximately 5V), while the power supply voltage supplied to the drive element is high voltage (approximately 600V or more). Therefore, an insulating element is necessary for transmitting the PWM control signal from the control element to the drive element. Conventionally, the insulating element was a photocoupler. However, in recent years, inductor-coupled insulating elements have become popular. Inductor-coupled insulating elements transmit electrical signals in an isolated state by inductively coupling two inductors (coils). That is, one coil is used to convert the electrical signal into magnetism, and the other coil is used to convert the magnetism back into an electrical signal, thereby transmitting the electrical signal in an isolated state. Unlike photocouplers, inductor-coupled insulating elements contribute to the miniaturization of semiconductor devices and have the advantage of being able to handle high-speed switching operations of multiple switching elements because there is almost no delay in the transmission of even high-frequency electrical signals. For example, Patent Document 1 discloses a semiconductor device that incorporates a semiconductor element equipped with a transmitting circuit, an inductor-coupled insulating element, and a driving element (gate driver IC) equipped with a receiving circuit, all within a single package.

[0004] Semiconductor devices that incorporate semiconductor elements with significant potential differences in the supplied power voltage, such as control elements and drive elements, within a single package require not only the incorporation of insulating elements but also improved dielectric strength. When such a semiconductor device is packaged as an SOP (Small Outline Package), multiple terminals exposed from one side of the sealing resin and drive elements, etc. It is preferable, in terms of improving dielectric strength, that the multiple terminals exposed from the side of the sealing resin on the opposite side of the element are arranged with sufficient spacing between them. It is also preferable, in terms of improving dielectric strength, that the parts of the leads other than the multiple terminals are not exposed from the sealing resin. The higher the power supply voltage supplied to the motor controlled by the inverter device, the stronger the need for improved dielectric strength becomes.

[0005] For example, Patent Document 2 discloses the structure of a conventional SOP semiconductor device. In the manufacturing process of this semiconductor device, a support member called an island support supports the island portion (die pad) on which semiconductor elements are mounted. The island support extends perpendicular to the direction in which multiple terminals extend, with one end connected to the island portion and the other end connected to the outer frame of the leads. After the formation of the sealing resin, the island portion is supported by the sealing resin, so the island support becomes unnecessary, and when the semiconductor device is cut from the leads, the island support is also cut. At this time, the cut surface of the island support is exposed from the side of the sealing resin. Since the cut surface is part of the leads, the structure of this semiconductor device is unsuitable for improving the dielectric strength. [Prior art documents] [Patent Documents]

[0006] [Patent Document 1] Japanese Patent Publication No. 2013-51547 [Patent Document 2] Japanese Patent Publication No. 2000-68437 [Overview of the Initiative] [Problems that the invention aims to solve]

[0007] In view of the above circumstances, the object of the present invention is to provide a semiconductor device with improved dielectric strength. [Means for solving the problem]

[0008] The semiconductor device provided by the present invention comprises a semiconductor element, a die pad on which the semiconductor element is mounted, a plurality of first terminals arranged along a first direction, a plurality of second terminals arranged along the first direction and located on the opposite side of the plurality of first terminals with respect to the semiconductor element in a second direction perpendicular to the first direction, and a support terminal connected to the die pad, and a sealing resin covering a portion of each of the plurality of first terminals, the plurality of second terminals and the support terminal, the semiconductor element and the die pad, wherein the sealing resin has a pair of first resin sides formed spaced apart in the second direction and a pair of second resin sides formed spaced apart in the first direction, and the plurality of first terminals and the plurality of second terminals are exposed from the pair of first resin sides, respectively, and the conductive support member is not exposed from the pair of second resin sides.

[0009] Preferably in the embodiment of the present invention, the die pad includes a first die pad and a second die pad, wherein in the second direction, the first die pad and the second die pad are spaced apart from each other.

[0010] Preferably in an embodiment of the present invention, the support terminals include a pair of support terminals spaced apart in the first direction, and in the first direction, the pair of support terminals are connected to both ends of the die pad.

[0011] Preferably in the embodiment of the present invention, the pair of support terminals includes a pair of first support terminals connected to the first die pad and a pair of second support terminals connected to the second die pad, wherein the pair of first support terminals and the pair of second support terminals are exposed from the pair of first resin sides, respectively.

[0012] Preferably in the implementation of the present invention, the semiconductor element includes a control element and a drive element that requires a higher voltage than the control element, wherein the control element is mounted on the first die pad and the drive element is mounted on the second die pad.

[0013] Preferably in the implementation of the present invention, the control element is electrically connected to at least one of the first terminals, and the drive element is electrically connected to at least one of the second terminals.

[0014] Preferably in the embodiment of the present invention, the control element is electrically connected to at least one of the first support terminals, and the drive element is electrically connected to at least one of the second support terminals.

[0015] Preferably in the implementation of the present invention, an insulating element is further provided which is electrically conductive with the control element and the drive element, wherein in the second direction, the insulating element is located between the control element and the drive element.

[0016] Preferably, in the implementation of the present invention, an inductor is formed on the insulating element.

[0017] Preferably in the implementation of the present invention, the plan view shape of the control element, the drive element, and the insulating element is an elongated rectangle with the first direction as its longer side.

[0018] Preferably in the implementation of the present invention, the area of ​​the first die pad is larger than the area of ​​the second die pad, and the insulating element is mounted on the first die pad.

[0019] Preferably in the implementation of the present invention, a through hole is formed in the first die pad.

[0020] Preferably in the embodiment of the present invention, in the first die pad, the pair of first support terminals and the through hole are arranged in a straight line along the first direction.

[0021] Preferably in the implementation of the present invention, the plan view shape of both the first die pad and the second die pad is an elongated rectangle with the first direction as its longer side.

[0022] In the implementation of the present invention, preferably, the plurality of first terminals and the pair of first support terminals are respectively exposed from one of the resin first side surfaces.

[0023] In the implementation of the present invention, preferably, in the first direction, the pair of first support terminals are arranged on both sides of the plurality of first terminals.

[0024] In the implementation of the present invention, preferably, the plurality of second terminals and the pair of second support terminals are respectively exposed from the other resin first side surface.

[0025] In the implementation of the present invention, preferably, in the first direction, the second terminals are arranged on both sides of each of the pair of second support terminals.

[0026] In the implementation of the present invention, preferably, in the first direction, on the second terminals arranged outside each of the pair of second support terminals, a protrusion protruding toward the second support terminal is formed.

[0027] In the implementation of the present invention, preferably, it further includes a plurality of bonding wires bonded to the control element or the driving element, and a part of the plurality of bonding wires is bonded to at least one or more of the first terminals or the second terminals.

[0028] In the implementation of the present invention, preferably, a part of the plurality of bonding wires is bonded to at least one or more of the first support terminals or the second support terminals.

[0029] In the implementation of the present invention, preferably, a part of the plurality of bonding wires is bonded to the insulating element.

[0030] In the implementation of the present invention, preferably, the plurality of bonding wires bonded to the insulating element are arranged along the second direction.

[0031] Preferably in the implementation of the present invention, a first bonding portion bonded to the insulating element is formed on all of the plurality of bonding wires bonded to the insulating element.

[0032] Preferably in the implementation of the present invention, the conductive support member is made of a Cu-containing alloy.

[0033] Preferably in the implementation of the present invention, the sealing resin is an electrically insulating epoxy resin.

[0034] Preferably in carrying out the present invention, the invention further comprises an interior plating layer having portions formed on the plurality of first terminals, the plurality of second terminals, and the support terminal.

[0035] Preferably in the implementation of the present invention, the interior plating layer is made of Ag.

[0036] Preferably in the implementation of the present invention, the plurality of first terminals and the pair of first support terminals, and the plurality of second terminals and the pair of second support terminals are further provided with an exterior plating layer formed on the portion exposed from the pair of first resin side surfaces.

[0037] Preferably in the implementation of the present invention, the exterior plating layer is made of an alloy containing Sn. [Effects of the Invention]

[0038] According to the present invention, the plurality of first terminals and the plurality of second terminals are exposed from the pair of first resin sides. Furthermore, the die pad, the plurality of first terminals, the plurality of second terminals, and the support terminals constituting the semiconductor device are all components of the conductive support member. The conductive support member, such as the island support, is not exposed from the pair of second resin sides. With this configuration, there are no metal parts of the conductive support member exposed from the sealing resin near the plurality of second terminals to which a higher voltage than that applied to the plurality of first terminals exists. Therefore, it is possible to improve the dielectric strength of the semiconductor device.

[0039] Other features and advantages of the present invention will become more apparent from the detailed description below, based on the accompanying drawings. [Brief explanation of the drawing]

[0040] [Figure 1] This is a plan view showing a semiconductor device according to the first embodiment of the present invention. [Figure 2] Figure 1 is a plan view showing the semiconductor device (encapsulating resin omitted). [Figure 3] Figure 1 is a left side view showing the semiconductor device. [Figure 4] This is a right side view of the semiconductor device shown in Figure 1. [Figure 5] Figure 1 is a front view showing a semiconductor device. [Figure 6] Figure 1 is a rear view of the semiconductor device. [Figure 7] This is a cross-sectional view along the line VII-VII in Figure 2. [Figure 8] This is a cross-sectional view along the line VIII-VIII in Figure 2. [Figure 9] Figure 1 is a plan view showing the leads of a semiconductor device. [Figure 10] Figure 1 is a cross-sectional view of the main part showing the manufacturing process of bonding wires for semiconductor equipment. [Figure 11] Figure 1 is a cross-sectional view of the main part showing the manufacturing process of bonding wires for semiconductor equipment. [Figure 12] Figure 1 is a cross-sectional view of the main part showing the manufacturing process of bonding wires for semiconductor equipment. [Figure 13] Figure 1 is a cross-sectional view of the main part showing the manufacturing process of bonding wires for semiconductor equipment. [Figure 14] Figure 1 is a cross-sectional view of the main part showing the manufacturing process of bonding wires for semiconductor equipment. [Figure 15] This is a plan view showing a semiconductor device according to a second embodiment of the present invention (sealing resin omitted). [Figure 16] This is a cross-sectional view along the line XVI-XVI in Figure 15. [Figure 17] This is a plan view showing a semiconductor device according to a third embodiment of the present invention (sealing resin omitted). [Figure 18] This is a magnified view of the upper right region in Figure 17. [Modes for carrying out the invention]

[0041] Embodiments of the semiconductor device according to the present invention will be described with reference to the attached drawings.

[0042] [First Embodiment] A semiconductor device A1 according to the first embodiment of the present invention will be described based on Figures 1 to 12. For the sake of explanation, the vertical direction in the plan view is defined as the first direction X, and the horizontal direction in the plan view that is perpendicular to the first direction X is defined as the second direction Y. Both the first direction X and the second direction Y are perpendicular to the thickness direction of the semiconductor device A1.

[0043] Figure 1 is a plan view of semiconductor device A1. Figure 2 is a plan view of Figure 1 with the sealing resin 6, described later, omitted for ease of understanding. Figure 3 is a left side view of semiconductor device A1. Figure 4 is a right side view of semiconductor device A1. Figure 5 is a front view of semiconductor device A1. Figure 6 is a rear view of semiconductor device A1. Figure 7 is a cross-sectional view along line VII-VII (dotted line) in Figure 2. Figure 8 is a cross-sectional view along line VIII-VIII in Figure 2. Note that in Figure 2, the sealing resin 6 is shown by an imaginary line (double-dotted line). In Figures 7 and 8, the sealing resin 6 is shown without omission.

[0044] The semiconductor device A1 shown in these figures is surface-mounted on a circuit board of an inverter device, such as in an electric vehicle or a hybrid vehicle, and has a SOP package. The semiconductor device A1 in this embodiment comprises a semiconductor element 11, an insulating element 12, a conductive support member 80, a sealing resin 6, a bonding wire 71, an inner plating layer 72, and an outer plating layer 73. In this embodiment, the semiconductor device A1 is rectangular in plan view.

[0045] The semiconductor element 11 and the insulating element 12 are elements necessary for the semiconductor device A1 to function. The semiconductor element 11 includes a control element 111 and a drive element 112. The control element 111 has a circuit that converts a control signal input from the ECU into a PWM control signal, a transmitting circuit for transmitting the PWM control signal to the drive element 112, and a receiving circuit that receives an electrical signal from the drive element 112. The drive element 112 has a receiving circuit that receives the PWM control signal, a circuit (gate driver) that performs switching operations of a power semiconductor element such as an IGBT based on the PWM signal, and a transmitting circuit for transmitting an electrical signal to the control element 111. The electrical signal may be, for example, an output signal from a temperature sensor located near the motor.

[0046] The insulating element 12 is an element for transmitting the PWM control signal and other electrical signals in an insulated state. Since the driving element 112 requires a higher voltage than the control element 111, a significant potential difference occurs between the control element 111 and the driving element 112, thus requiring the insulating element 12. Specifically, for example, in an inverter device of an electric vehicle or hybrid vehicle, the power supply voltage supplied to the control element 111 is approximately 5V, while the power supply voltage supplied to the driving element 112 is approximately 600V or higher. In this embodiment, the insulating element 12 is an inductor-coupled insulating element. The inductor-coupled insulating element transmits electrical signals in an insulated state by inductively coupling two inductors (coils). The insulating element 12 has a substrate made of Si. An inductor made of Cu is formed on the substrate. The inductor includes a transmitting inductor and a receiving inductor, and these inductors are stacked on top of each other in the thickness direction of the insulating element 12. A dielectric layer made of SiO2 or the like is interposed between the transmitting inductor and the receiving inductor. The dielectric layer electrically insulates the transmitting inductor and the receiving inductor.

[0047] As shown in Figure 2, in the second direction Y, the insulating element 12 is located between the control element 111 and the drive element 112. In this embodiment, the plan view shapes of the control element 111, the drive element 112, and the insulating element 12 are all elongated rectangles with the first direction X as the longer side. The control element 111 and the insulating element 12 are mounted on the first die pad 21 of the die pad 2, which will be described later. The drive element 112 is mounted on the second die pad 22 of the die pad 2, which will be described later. Multiple pads 111a are formed on the upper surface of the control element 111 (the upper surface of the control element 111 shown in Figure 7). Similarly, multiple pads 112a are formed on the upper surface of the drive element 112 (the upper surface of the drive element 112 shown in Figure 7), and multiple pads 12a are formed on the upper surface of the insulating element 12 (the upper surface of the insulating element 12 shown in Figure 7).

[0048] The conductive support member 80 is a component in the semiconductor device A1 that mounts the semiconductor element 11 and the insulating element 12, and also constitutes a conductive path between the semiconductor element 11 and the insulating element 12 and the circuit board of the inverter device. The conductive support member 80 is made of, for example, an alloy containing Cu. The conductive support member 80 is formed from a lead 81, which will be described later. The conductive support member 80 includes a die pad 2, a plurality of first terminals 3, a plurality of second terminals 4, and a support terminal 5.

[0049] The die pad 2 is a component on which the semiconductor element 11 and the insulating element 12 are mounted. The die pad 2 includes a first die pad 21 and a second die pad 22. As shown in Figure 2, in the second direction Y, the first die pad 21 and the second die pad 22 are spaced apart from each other. In this embodiment, the area of ​​the first die pad 21 is larger than the area of ​​the second die pad 22. Also in this embodiment, the plan view shapes of both the first die pad 21 and the second die pad 22 are long rectangles with the longer side in the first direction X. As shown in Figures 7 and 8, both the first die pad 21 and the second die pad 22 are flat.

[0050] As shown in Figures 7 and 8, the first die pad 21 has a first die pad upper surface 211 and a first die pad lower surface 212. The first die pad upper surface 211 and the first die pad lower surface 212 face opposite each other. In this embodiment, an interior plating layer 72 is formed on the first die pad upper surface 211. A control element 111 and an insulating element 12 are mounted on the interior plating layer 72 formed on the first die pad upper surface 211 by die bonding via a bonding layer (not shown). The first die pad lower surface 212 is in contact with the sealing resin 6 over its entire surface.

[0051] As shown in Figure 7, the second die pad 22 has a second die pad upper surface 221 and a second die pad lower surface 222. The second die pad upper surface 221 and the second die pad lower surface 222 face opposite each other. In this embodiment, an interior plating layer 72 is formed on the second die pad upper surface 221. The drive element 112 is mounted on the interior plating layer 72 formed on the second die pad upper surface 221 by die bonding via a bonding layer (not shown). The second die pad lower surface 222 is in contact with the sealing resin 6 over its entire surface.

[0052] As shown in Figures 2 and 7, in the second direction Y, a sealing resin 6 is interposed between the first die pad 21 and the second die pad 22. In this embodiment, as will be described later, the sealing resin 6 is made of, for example, a black epoxy resin having electrical insulating properties. Therefore, the first die pad 21 and the second die pad 22 are electrically insulated by the insulating element 12 and the sealing resin 6.

[0053] The multiple first terminals 3 are components that form a conductive path between the semiconductor device A1 and the circuit board of the inverter device by being joined to the circuit board. As shown in Figures 1 and 3, the multiple first terminals 3 are arranged along a first direction X. Furthermore, the multiple first terminals 3 are exposed so as to extend in a second direction Y from one of the first resin sides 63 of the sealing resin 6, which will be described later. The multiple first terminals 3 include multiple first intermediate terminals 31 and a pair of first side terminals 32.

[0054] As shown in Figures 2 and 3, in the first direction X, a plurality of first intermediate terminals 31 are arranged sandwiched between a pair of first side terminals 32. Each of the plurality of first intermediate terminals 31 has a lead portion 311 and a pad portion 312.

[0055] The lead portion 311 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from one of the first resin side surfaces 63 is bent into a gull-wing shape. Also, as shown in Figure 7, the exposed portion is covered by an outer plating layer 73. The portion of the lead portion 311 that does not have the outer plating layer 73 is covered by the sealing resin 6. The pad portion 312 is connected to the lead portion 311 and is a rectangular portion that is wider than the lead portion 311 in the first direction X. As shown in Figure 7, in this embodiment, an inner plating layer 72 is formed on the upper surface of the pad portion 312. The pad portion 312 is covered with the sealing resin 6 over its entire surface. The pad portion 312 is also flat.

[0056] As shown in Figures 2 and 3, in the first direction X, a pair of first side terminals 32 are arranged on both sides of a plurality of first intermediate terminals 31. Each pair of first side terminals 32 has a lead portion 321 and a pad portion 322.

[0057] The lead portion 321 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from one of the first resin side surfaces 63 is bent in a gull-wing shape. Also, similar to the lead portion 311 of the first intermediate terminal 31, the exposed portion is covered by the outer plating layer 73. The portion of the lead portion 321 that does not have the outer plating layer 73 is covered by the sealing resin 6. The pad portion 322 is connected to the lead portion 321 and is wider than the lead portion 321 in the first direction X. In this embodiment, similar to the pad portion 312 of the first intermediate terminal 31, an inner plating layer 72 is formed on the upper surface of the pad portion 322 (the surface facing the same direction as the upper surface 211 of the first die pad in Figure 7). The entire surface of the pad portion 322 is covered by the sealing resin 6. The pad portion 322 is also flat.

[0058] The multiple second terminals 4, like the multiple first terminals 3, are components that form a conductive path between the semiconductor device A1 and the circuit board of the inverter device by being joined to the circuit board. As shown in Figures 1 and 4, the multiple second terminals 4 are arranged along the first direction X. Also, as shown in Figure 2, the multiple second terminals 4 are located on the opposite side of the multiple first terminals 3 in the second direction Y, with the semiconductor element 11 in between. The multiple second terminals 4 are exposed from the other first resin side surface 63 of the sealing resin 6, which will be described later, so as to extend in the second direction Y. The multiple second terminals 4 include multiple second intermediate terminals 41 and a pair of second side terminals 42.

[0059] As shown in Figures 2 and 4, in the first direction X, the multiple second intermediate terminals 41 are arranged sandwiched between a pair of second side terminals 42. Furthermore, in the first direction X, the multiple second intermediate terminals 41 are arranged sandwiched between a pair of second support terminals 52 of the support terminal 5, which will be described later. Each of the multiple second intermediate terminals 41 has a lead portion 411 and a pad portion 412.

[0060] The lead portion 411 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from the other resin first side surface 63 is bent into a gull-wing shape. Also, as shown in Figure 7, the exposed portion is covered by the outer plating layer 73. The portion of the lead portion 411 that does not have the outer plating layer 73 is covered by the sealing resin 6. The pad portion 412 is connected to the lead portion 411 and is a rectangular portion that is wider than the lead portion 411 in the first direction X. As shown in Figure 7, in this embodiment, an inner plating layer 72 is formed on the upper surface of the pad portion 412 (the upper surface of the pad portion 412 shown in Figure 7). The pad portion 412 is covered with the sealing resin 6 over its entire surface. The pad portion 412 is also flat. In this embodiment, the shape of the second terminal 4 is the same as the shape of the first terminal 3.

[0061] As shown in Figures 2 and 4, in the first direction X, a pair of second-side terminals 42 are arranged on both sides of a plurality of second-side terminals 42. Each pair of second-side terminals 42 has a lead portion 421 and a pad portion 422.

[0062] The lead portion 421 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from the other resin first side surface 63 is bent into a gull-wing shape. Also, similar to the lead portion 411 of the second intermediate terminal 41, the exposed portion is covered by the outer plating layer 73. The portion of the lead portion 421 that does not have the outer plating layer 73 is covered by the sealing resin 6. Furthermore, the length of the portion of the lead portion 421 covered by the sealing resin 6 is longer than the length of the corresponding portion of the lead portion 411 of the second intermediate terminal 41. The pad portion 422 is a portion connected to the lead portion 421 and extending in the first direction X. As shown in Figure 2, the end of the pad portion 422 is spaced apart from the second die pad 22. In this embodiment, similar to the pad portion 412 of the second intermediate terminal 41, an interior plating layer 72 is formed on the upper surface of the pad portion 422 (the surface facing the same direction as the upper surface 221 of the second die pad in Figure 7). The entire surface of the pad portion 422 is covered with sealing resin 6. The pad portion 422 is also flat.

[0063] The support terminals 5 are connected to the die pad 2. The support terminals 5 support the die pad 2 and, like the plurality of first terminals 3 and the plurality of second terminals 4, are members that form a conductive path between the semiconductor device A1 and the circuit board by being joined to the circuit board of the inverter device. The support terminals 5 include those composed of a pair of members, and further include a pair of first support terminals 51 and a pair of second support terminals 52. As shown in Figure 2, the pair of first support terminals 51 are spaced apart in the first direction X and connected to both ends of the first die pad 21. The pair of second support terminals 52 are spaced apart in the first direction X and connected to both ends of the second die pad 22.

[0064] As shown in Figures 2 and 3, in the first direction X, the pair of first support terminals 51 are positioned on both sides of the plurality of first terminals 3. The pair of first support terminals 51 are also exposed so as to extend in the second direction Y from one of the first resin side surfaces 63 from which the plurality of first terminals 3 are exposed. Each of the pair of first support terminals 51 has a lead portion 511 and a pad portion 512.

[0065] The lead portion 511 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from one of the first resin side surfaces 63 is bent in a gull-wing shape. Also, similar to the lead portion 311 of the first intermediate terminal 31, the exposed portion is covered by the outer plating layer 73. The portion of the lead portion 511 that does not have the outer plating layer 73 is covered by the sealing resin 6. The length of the portion of the lead portion 511 covered by the sealing resin 6 is longer than the length of the corresponding portion of the lead portion 311 of the first intermediate terminal 31 or the lead portion 311 of the first side terminal 32. The pad portion 512 is a portion connected to the lead portion 511 and extending in the first direction X. As shown in Figure 2, the end of the pad portion 512 is connected to the first die pad 21. As shown in Figure 8, in this embodiment, similar to the pad portion 312 of the first intermediate terminal 31, an inner plating layer 72 is formed on the upper surface of the pad portion 512. The pad portion 512 is completely covered with sealing resin 6. The pad portion 512 is also flat.

[0066] As shown in Figures 2 and 4, in the first direction X, a plurality of second intermediate terminals 41 are arranged inside a pair of second support terminals 52. Also, in the first direction X, second side terminals 42 are arranged outside each of the pair of second support terminals 52. Therefore, second terminals 4 are arranged on both sides of each of the pair of second support terminals 52. Each of the pair of second support terminals 52 is exposed so as to extend in the second direction Y from the other resin first side surface 63 from which the plurality of second terminals 4 are exposed. Each of the pair of second support terminals 52 has a lead portion 521, a pad portion 522, and a connecting portion 524.

[0067] The lead portion 521 is an elongated rectangular portion extending along the second direction Y, and as shown in Figures 5 and 6, the portion exposed from the other resin first side surface 63 is bent in a gull-wing shape. Also, similar to the lead portion 411 of the second intermediate terminal 41, the exposed portion is covered by the outer plating layer 73. The portion of the lead portion 521 that does not have the outer plating layer 73 is covered by the sealing resin 6. The pad portion 522 is connected to the lead portion 521 and is wider than the lead portion 521 in the first direction X. The pad portion 522 extends in the second direction Y. In this embodiment, similar to the pad portion 412 of the second intermediate terminal 41, the inner plating layer 72 is formed on the upper surface of the pad portion 522 (the surface facing the same direction as the upper surface 221 of the second die pad in Figure 7). The entire surface of the pad portion 522 is covered by the sealing resin 6. The pad portion 522 is also flat. The connecting portion 524 is connected to the pad portion 522 and extends in the first direction X. As shown in Figure 2, the end of the connecting portion 524 is connected to the second die pad 22. In this embodiment, similar to the pad portion 522, an interior plating layer 72 is formed on the upper surface of the connecting portion 524 (the surface facing the same direction as the upper surface of the pad portion 522). The connecting portion 524 is covered with sealing resin 6 over its entire surface.

[0068] Figure 9 is a plan view showing the lead 81 of semiconductor device A1. In Figure 9, the area where the sealing resin 6 is formed is indicated by dashed lines. The area where the interior plating layer 72 is formed is indicated by shaded areas.

[0069] The aforementioned conductive support member 80 is formed from a lead 81. In the manufacturing process of the semiconductor device A1, the die pad 2, the plurality of first terminals 3, the plurality of second terminals 4, and the support terminal 5 are all formed from the same lead 81. The lead 81 is made of an alloy containing Cu, for example. The lead 81 has an outer frame 811, an island portion 812, a plurality of first leads 813, a plurality of second leads 814, a support lead 815, and a dam bar 816. Of these, the outer frame 811 and the dam bar 816 do not constitute the semiconductor device A1. The lead 81 will be described below with reference to Figure 9.

[0070] The outer frame 811 is a member formed to surround the island section 812, a plurality of first leads 813, a plurality of second leads 814, a support lead 815, and a dam bar 816. The plurality of first leads 813, a plurality of second leads 814, and a support lead 815 are connected along the first direction X of the outer frame 811. The dam bar 816 is connected along the second direction Y of the outer frame 811.

[0071] The island portion 812 is a long rectangular member with the first direction X as its longer side in a plan view. The island portion 812 corresponds to the die pad 2. The island portion 812 is supported by the outer frame 811 via support leads 815. The island portion 812 includes a first island portion 812a and a second island portion 812b. The first island portion 812a corresponds to the first die pad 21, and the second island portion 812b corresponds to the second die pad 22. The first island portion 812a and the second island portion 812b are spaced apart from each other.

[0072] The multiple first leads 813 are members arranged along a first direction X and each extends in a second direction Y. The multiple first leads 813 correspond to multiple first terminals 3. One end of each first lead 813 is connected to the outer frame 811. The multiple first leads 813 include multiple first intermediate leads 813a and a pair of first side leads 813b. The first intermediate leads 813a correspond to the first intermediate terminal 31, and the first side leads 813b correspond to the first side terminal 32.

[0073] The multiple second leads 814 are arranged along the first direction X and each extends in the second direction Y. Furthermore, the multiple second leads 814 are located on opposite sides of the island portion 812 in the second direction Y. The multiple second leads 814 correspond to the multiple second terminals 4. One end of each second lead 814 is connected to the outer frame 811. The multiple second leads 814 include multiple second intermediate leads 814a and a pair of second side leads 814b. The second intermediate leads 814a correspond to the second intermediate terminal 41, and the second side leads 814b correspond to the second side terminal 42.

[0074] The support lead 815 is a member that extends in the second direction Y, with one end connected to the outer frame 811 and the other end connected to the island portion 812. The support lead 815 corresponds to the support terminal 5. The support lead 815 includes a pair of first support leads 815a and a pair of second support leads 815b. The first support leads 815a correspond to the first support terminal 51, and the second support leads 815b correspond to the second support terminal 52. The pair of first support leads 815a are spaced apart in the first direction X and connected to both ends of the first island portion 812a. The pair of second support leads 815b are spaced apart in the first direction X and connected to both ends of the second island portion 812b.

[0075] The dam bars 816 are a pair of members that extend in a first direction X and have both ends connected to the outer frame 811. The dam bars 816 support a plurality of first leads 813, a plurality of second leads 814, and a support lead 815 in the first direction X, and also function to dam the molten synthetic resin during the formation process of the sealing resin 6. One dam bar 816 is connected to a plurality of first intermediate leads 813a, a pair of first side leads 813b, and a pair of first support leads 815a. The other dam bar 816 is connected to a plurality of second intermediate leads 814a, a pair of second side leads 814b, and a pair of second support leads 815b.

[0076] The sealing resin 6 is made of, for example, a black epoxy resin having electrical insulating properties. The sealing resin 6 covers a portion of each of the multiple first terminals 3, multiple second terminals 4, and support terminals 5, as well as the semiconductor element 11, insulating element 12, die pad 2, bonding wire 71, and interior plating layer 72. The sealing resin 6 is formed by transfer molding using a mold. The sealing resin 6 has a resin upper surface 61, a resin lower surface 62, a pair of resin first side surfaces 63, and a pair of resin second side surfaces 64.

[0077] As shown in Figures 3 to 6, the upper resin surface 61 is an upward-facing surface, and the lower resin surface 62 is a downward-facing surface. The upper resin surface 61 and the lower resin surface 62 face opposite each other. Both the upper resin surface 61 and the lower resin surface 62 are flat.

[0078] As shown in Figures 1 and 2, the pair of first resin sides 63 are formed spaced apart in the second direction Y. The pair of first resin sides 63 face opposite each other. In this embodiment, a plurality of first terminals 3 and a pair of first support terminals 51 are exposed from one of the first resin sides 63. A plurality of second terminals 4 and a pair of second support terminals 52 are exposed from the other first resin side 63. Each of the pair of first resin sides 63 has an upper part 631, a central part 632, and a lower part 633.

[0079] As shown in Figures 3 to 6, the upper part 631 of the first resin side surface is the portion whose upper end is connected to the upper resin surface 61 and whose lower end is connected to the central part 632 of the first resin side surface. The upper part 631 of the first resin side surface is inclined so that its upper end is located on the inside side of the semiconductor device A1.

[0080] As shown in Figures 3 to 6, the central portion 632 of the first side surface of the resin is the part whose upper end is connected to the upper part 631 of the first side surface of the resin and whose lower end is connected to the lower part 633 of the first side surface of the resin. The central portion 632 of the first side surface of the resin is perpendicular to the upper surface 61 and the lower surface 62 of the resin. Multiple first terminals 3 and a pair of first support terminals 51 are exposed from one central portion 632 of the first side surface of the resin. Multiple second terminals 4 and a pair of second support terminals 52 are exposed from the other central portion 632 of the first side surface of the resin.

[0081] As shown in Figures 3 to 6, the lower part 633 of the first resin side surface is the portion whose upper end is connected to the central part 632 of the first resin side surface and whose lower end is connected to the lower resin surface 62. The lower part 633 of the first resin side surface is inclined so that its lower end is located on the inside side of the semiconductor device A1.

[0082] As shown in Figures 1 and 2, the pair of second resin sides 64 are formed spaced apart in the first direction X. The pair of second resin sides 64 face opposite each other. As shown in Figures 2, 5, and 6, in this embodiment, the conductive support member 80 is not exposed from the pair of second resin sides 64. Each of the pair of second resin sides 64 has an upper part 641, a central part 642, and a lower part 643.

[0083] As shown in Figures 3 to 6, the upper part 641 of the second resin side surface is the portion whose upper end is connected to the upper resin surface 61 and whose lower end is connected to the central part 642 of the second resin side surface. The upper part 641 of the second resin side surface is inclined so that its upper end is located on the inside side of the semiconductor device A1.

[0084] As shown in Figures 3 to 6, the central portion 642 of the second resin side surface is the part whose upper end is connected to the upper portion 641 of the second resin side surface and whose lower end is connected to the lower portion 643 of the second resin side surface. The central portion 642 of the second resin side surface is perpendicular to the upper resin surface 61 and the lower resin surface 62, and is perpendicular to the central portion 632 of the first resin side surface. In this embodiment, in the thickness direction of the semiconductor device A1, the height of the central portion 642 of the second resin side surface and the height of the central portion 632 of the first resin side surface are approximately the same.

[0085] As shown in Figures 3 to 6, the lower part 643 of the second resin side surface is the portion whose upper end is connected to the central part 642 of the second resin side surface and whose lower end is connected to the lower resin surface 62. The lower part 643 of the second resin side surface is inclined so that its lower end is located on the inside side of the semiconductor device A1.

[0086] The multiple bonding wires 71, together with the multiple first terminals 3, multiple second terminals 4, and support terminals 5 described above, constitute a conductive path within the semiconductor device A1 for the semiconductor element 11 and the insulating element 12 to perform their predetermined functions. The multiple bonding wires 71 include multiple first bonding wires 711, multiple second bonding wires 712, multiple third bonding wires 713, and multiple fourth bonding wires 714.

[0087] As shown in Figure 2, the multiple first bonding wires 711 constitute a conductive path between the control element 111 and the multiple first terminals 3 and the pair of first support terminals 51. The multiple first bonding wires 711 provide electrical connection between the control element 111 and at least one of the first terminals 3 and the first support terminals 51. Each of the multiple first bonding wires 711 is bonded to the pad 111a of the control element 111 and the pad portion 312 of the first intermediate terminal 31, the pad portion 322 of the first side terminal 32, or the pad portion 512 of the first support terminal 51.

[0088] As shown in Figure 2, the multiple second bonding wires 712 constitute a conductive path between the insulating element 12 and the control element 111. The multiple second bonding wires 712 make the insulating element 12 and the control element 111 electrically connected to each other. Each of the multiple second bonding wires 712 is bonded to the pad 12a of the insulating element 12 and the pad 111a of the control element 111. In this embodiment, the multiple second bonding wires 712 are arranged along the second direction Y.

[0089] As shown in Figure 2, the multiple third bonding wires 713 constitute a conductive path between the insulating element 12 and the driving element 112. The multiple third bonding wires 713 provide electrical conductivity between the insulating element 12 and the driving element 112. Each of the multiple third bonding wires 713 is bonded to the pad 12a of the insulating element 12 and the pad 112a of the driving element 112. In this embodiment, the multiple third bonding wires 713 are arranged along the second direction Y.

[0090] As shown in Figure 2, the multiple fourth bonding wires 714 constitute a conductive path between the drive element 112 and the multiple second terminals 4 and the pair of second support terminals 52. The multiple fourth bonding wires 714 provide electrical connection between the drive element 112 and at least one of the second terminals 4 and the second support terminals 52. Each of the multiple fourth bonding wires 714 is bonded to the pad 112a of the drive element 112 and to the pad portion 412 of the second intermediate terminal 41, the pad portion 422 of the second side terminal 42, or the pad portion 522 of the second support terminal 52.

[0091] Figures 10 to 14 are cross-sectional views of key parts showing the wire bonding of the bonding wire 71 of semiconductor device A1.

[0092] All of the multiple second bonding wires 712 and third bonding wires 713 bonded to the insulating element 12 have first bonding portions 712a and first bonding portions 713a formed on them, bonded to the insulating element 12. The wire bonding process of the second bonding wires 712 and third bonding wires 713 will be explained based on Figures 10 to 14.

[0093] As shown in Figure 10, the capillary 88 is lowered toward the insulating element 12, and the tip of the wire 871 is pressed against the pad 12a of the insulating element 12. At this time, the tip of the wire 871 is pressed against the pad 12a by the weight of the capillary 88 and the action of ultrasonic waves emitted from the capillary 88. The capillary 88 is cylindrical with a through hole, and its tip is made of a gently curved surface. The wire 871, which will become the bonding wire 71, is fed out from the capillary 88 in a manner that allows it to move back and forth. Next, as shown in Figure 11, the capillary 88 is raised while the wire 871 is fed out, so that the first bonding portion 712a of the second bonding wire 712 is formed on the pad 12a. The first bonding portion 713a of the third bonding wire 713 is formed in the same manner.

[0094] Next, as shown in Figure 12, the capillary 88 is moved directly above the pad 111a of the control element 111, and then the capillary 88 is lowered, pressing its tip against the pad 111a. At this time, the wire 871 is sandwiched between the tip of the capillary 88 and the pad 111a, and a portion of the wire 871 adheres to the tip of the capillary 88. Next, as shown in Figure 13, the capillary 88 is raised, cutting the wire 871 and forming the second bonding portion 712b of the second bonding wire 712 on the pad 111a. Through the above process, the second bonding wire 712 bonded to the insulating element 12 and the control element 111 is formed.

[0095] As shown in Figure 14, when forming the second bonding portion 713b of the third bonding wire 713, the tip of the capillary 88 is pressed against the pad 112a of the drive element 112. At this time, the wire 871 is sandwiched between the tip of the capillary 88 and the pad 112a. This tip is located on the opposite side of the wire 871 from the tip of the capillary 88 when the second bonding wire 712 was formed. By taking this wire bonding process, it is possible to suppress the uneven distribution of the wire 871 attached to the tip of the capillary 88, which is a factor that hinders wire bonding.

[0096] The interior plating layer 72 has portions formed on a plurality of first terminals 3, a plurality of second terminals 4, and a support terminal 5. The specific portions are shown in the description of the plurality of first terminals 3, a plurality of second terminals 4, and a support terminal 5 mentioned above. In this embodiment, the interior plating layer 72 is also formed on the upper surface 211 of the first die pad 21 and the upper surface 221 of the second die pad 22. As shown in Figure 9, the interior plating layer 72 is formed in the region indicated by the shaded area on the lead 81. The interior plating layer 72 serves to protect the lead 81 from impact during wire bonding. The interior plating layer 72 is made of, for example, silver (Ag).

[0097] The exterior plating layer 73 is formed on the portions of the multiple first terminals 3 and a pair of first support terminals 51, and the multiple second terminals 4 and a pair of second support terminals 52, that are exposed from a pair of resin first side surfaces 63. The exterior plating layer 73 serves to ensure good solder adhesion to the exposed portions while preventing corrosion of the exposed portions caused by soldering when the semiconductor device A1 is surface-mounted onto the circuit board of the inverter device by soldering. The exterior plating layer 73 is made of an alloy containing Sn, such as solder.

[0098] Next, we will explain the effects and benefits of semiconductor device A1.

[0099] In this embodiment, the multiple first terminals 3 and the multiple second terminals 4 are each exposed from a pair of first resin side surfaces 63. Furthermore, the die pad 2, the multiple first terminals 3, the multiple second terminals 4, and the support terminal 5 that constitute the semiconductor device A1 are all components of the conductive support member 80. The conductive support member 80, such as the island support, is not exposed from a pair of second resin side surfaces 64. With this configuration, there are no metal parts of the conductive support member 80 exposed from the sealing resin 6 near the multiple second terminals 4 to which a higher voltage than that of the multiple first terminals 3 is applied. Therefore, it is possible to improve the dielectric strength of the semiconductor device A1.

[0100] The multiple second bonding wires 712 and third bonding wires 713 bonded to the insulating element 12 are arranged along the second direction Y. For example, when the semiconductor device A1 is mounted in an inverter device of an electric vehicle or a hybrid vehicle, the voltage applied to the multiple second bonding wires 712 is approximately 5V, while the voltage applied to the multiple third bonding wires 713 is approximately 600V or more. Therefore, such an arrangement of multiple second bonding wires 712 and third bonding wires 713 is preferable from the viewpoint of improving the dielectric strength of the semiconductor device A1.

[0101] To improve the dielectric strength of the semiconductor device A1, the distance between the multiple first terminals 3 and the multiple second terminals 4 tends to increase. Therefore, by making the first direction X the longer side in the plan view of the semiconductor element 11, the insulating element 12, and the die pad 2, it is possible to avoid increasing the size of the semiconductor device A1.

[0102] The first die pad 21 and the second die pad 22 are both supported at both ends by a pair of first support terminals 51 and second support terminals 52, respectively, at approximately the center of the second direction Y. During the formation of the sealing resin 6, the molten resin injected into the mold comes into contact with the die pad 2, causing displacement of the die pad 2 in the thickness direction of the semiconductor device A1. Therefore, this configuration can suppress such displacement and avoid malfunctions of the semiconductor device A1.

[0103] In forming the sealing resin 6, molten resin is generally injected into the mold from the corner of the lead 81. In this embodiment, conductive support members 80 such as island supports are not exposed from the pair of second resin sides 64. With this configuration, the molten resin can be injected from the center of the second direction Y, thereby suppressing the occurrence of voids in the sealing resin 6.

[0104] Figures 15 to 18 show other embodiments of the present invention. In these figures, elements that are the same as or similar to those in the semiconductor device A1 described above are denoted by the same reference numerals, and redundant explanations are omitted.

[0105] [Second Embodiment] A semiconductor device A2 according to a second embodiment of the present invention will be described based on Figures 15 and 16.

[0106] Figure 15 is a plan view of semiconductor device A2 with the sealing resin 6 omitted for ease of understanding. Figure 16 is a cross-sectional view along the line XVI-XVI (dotted line) in Figure 15. Note that in Figure 15, the sealing resin 6 is shown by a dashed line (double dotted line). In Figure 16, the sealing resin 6 is shown without omission. In this embodiment, semiconductor device A2 is rectangular in plan view.

[0107] The semiconductor device A2 of this embodiment differs from the semiconductor device A1 described above in the shape of the first die pad 21. As shown in Figures 15 and 16, through holes 213 are formed in the first die pad 21. In this embodiment, three through holes 213 are formed in the region of the first die pad 21 located between the control element 111 and the insulating element 12. Each of the through holes 213 is an elongated hole extending in the first direction X. The number of through holes 213 and their planar shape can be freely set. As shown in Figure 15, in the first die pad 21, the pair of first support terminals 51 and the through holes 213 are arranged on a straight line N (dotted line) along the first direction X.

[0108] This embodiment also makes it possible to improve the dielectric strength of the semiconductor device A2. Furthermore, according to this embodiment, a through hole 213 is formed in the first die pad 21. Since the area of ​​the first die pad 21 is larger than the area of ​​the second die pad 22, when forming the sealing resin 6, voids tend to occur in the portion of the sealing resin 6 located near the first die pad 21. Therefore, by forming a through hole 213 in the first die pad 21, the molten resin injected into the mold when forming the sealing resin 6 is sufficiently filled, and the occurrence of voids in the sealing resin 6 can be further suppressed.

[0109] [Third Embodiment] A semiconductor device A3 according to a third embodiment of the present invention will be described based on Figures 17 and 18.

[0110] Figure 17 is a plan view of the semiconductor device A3 with the sealing resin 6 omitted for ease of understanding. Figure 18 is a magnified view of the upper right region in Figure 17. In Figures 17 and 18, the sealing resin 6 is shown by dashed lines. In Figure 18, the state when a pull-out force in the second direction Y acts on the second support terminal 52 and the second die pad 22 attempts to detach from the sealing resin 6 is shown by dashed lines. In this embodiment, the semiconductor device A3 is rectangular in plan view.

[0111] In this embodiment, semiconductor device A3 differs from semiconductor devices A1 and A2 described above in that the shape of a pair of second-side terminals 42 and the shape of a pair of first support terminals 51 are different from those of the multiple second terminals 4. As shown in Figures 17 and 18, in the first direction X, each of the second terminals 4, i.e., the pair of second-side terminals 42, which are located outside each of the pair of second support terminals 52, has a projection 423 that protrudes toward the second support terminal 52. In this embodiment, the plan view shape of the projection 423 is trapezoidal. However, the plan view shape of the projection 423 can be any shape, such as a rectangle. Due to the nature of the processing of the lead 81, similarly, each of the pair of first support terminals 51 also has a projection 513 that protrudes toward the first-side terminal 32.

[0112] This embodiment also makes it possible to improve the dielectric strength of the semiconductor device A3. Furthermore, according to this embodiment, protrusions 423 are formed on each of the pair of second terminals 42. Since the area of ​​the second die pad 22 is smaller than the area of ​​the first die pad 21, the bonding force between the second die pad 22 and the sealing resin 6 is smaller than the bonding force between the first die pad 21 and the sealing resin 6. Therefore, when cutting the lead 81 to form individual pieces after the sealing resin 6 has been formed, there is a risk that the second die pad 22 may come out of the sealing resin 6 due to the pull-out force in the second direction Y acting on the second support terminal 52. As shown in Figure 18, the protrusions 423 protrude in a direction (first direction X) perpendicular to the direction (second direction Y) of the pull-out force acting on the pair of second support terminals 52. Therefore, when the pulling force acts on the second support terminal 52 and the second die pad 22 attempts to detach from the sealing resin 6, the second support terminal 52 receives a reaction force from the projection 423. This prevents the second die pad 22 from detaching from the sealing resin 6.

[0113] The semiconductor device according to the present invention is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device according to the present invention can be modified in various ways. [Explanation of Symbols]

[0114] A1, A2, A3: Semiconductor equipment 11: Semiconductor devices 111: Control Elements 111a: Pad 112: Driving element 112a: Pad 12: Insulating element 12a: Pad 2: Die Pad 21: First die pad 211: Top surface of the first die pad 212: Bottom surface of the first die pad 213: Through hole 22: Second die pad 221: Top surface of the second die pad 222: Lower surface of the second die pad 3: 1st terminal 31: First intermediate terminal 311: Lead section 312: Pad section 32: First side terminal 321: Lead section 322: Pad section 4: 2nd terminal 41: Second intermediate terminal 411: Lead section 412: Pad section 42: Second side terminal 421: Lead section 422: Pad section 423:Protrusion 5: Support terminal 51: 1st support terminal 511: Lead section 512: Pad section 513:Protrusion 52:Second support terminal 521: Lead section 522: Pad section 524: Connection part 6: Sealing resin 61: Resin top surface 62:Resin bottom surface 63: Resin, first side 631: Upper part of the first side of the resin 632:Resin first side center part 633: Lower part of the first side of the resin 64: Resin, second side 641: Resin, second side, upper part 642:Resin second side center part 643: Lower part of the second side of the resin 71: Bonding wire 711: First bonding wire 712: Second bonding wire 712a: First bonding section 712b: Second bonding section 713: Third bonding wire 713a: First bonding section 713b: Second bonding section 714: Fourth bonding wire 72: Interior plating layer 73: Exterior plating layer 80: Conductive support member 81: Lead 811: Outer frame 812: Island Section 812a: First Island Section 812b: Second Island Section 813: First lead 813a: First intermediate lead 813b: First side lead 814: Second lead 814a: Second Intermediate Lead 814b: Second side lead 815: Support Lead 815a: First support lead 815b: Second support lead 816: Dam Bar 871: Wire 88: Capillary X: 1st direction Y: Second direction N: Straight line

Claims

1. A first lead includes a first die pad and a plurality of first terminals, each integrally formed with the first die pad and extending from the first die pad, each having a first curved portion. A first semiconductor element mounted on the first die pad has a first side extending in the longitudinal direction in a plan view, and a second side that is shorter in length than the first side and intersects the first side. The insulating element mounted on the first die pad, A second lead includes a second die pad and a plurality of second terminals, each integrally formed with the second die pad and extending from the second die pad, each being curved; The second semiconductor element has a third side extending in the longitudinal direction in a plan view, and a fourth side that is shorter in length than the third side and intersects the third side, and is mounted on the second die pad. A plurality of first lead terminals located closer to the first die pad than the second die pad, A plurality of second lead terminals located closer to the second die pad than the first die pad, A plurality of first wires connecting the insulating element and the first semiconductor element, A plurality of second wires connecting the insulating element and the second semiconductor element, Each of the third wires is connected to the first semiconductor element and conducts to the first die pad, and each intersects the second side in a plan view, Each of the following is a plurality of fourth wires, each connecting the first semiconductor element to one of the plurality of first lead terminals, and each intersecting either the first side or the second side in a plan view. The device comprises a plurality of fifth wires, each connecting the second semiconductor element to one of the plurality of second lead terminals, and each intersecting either the third or fourth side in a plan view, The first curved portion is defined by two first edges that are opposite each other in a plan view and are each continuously curved, A semiconductor device in which each of the two first edges is recessed in the same direction as the other.

2. Each of the plurality of second terminals has a second curved portion, The second curved portion is defined by two second edges that are opposite each other in a plan view and are each continuously curved, The semiconductor device according to claim 1, wherein each of the two second edges is recessed in the same direction as the other.

3. In a plan view, each of the plurality of fourth wires intersects the first side of the first semiconductor element. The semiconductor device according to claim 1 or 2, wherein in a plan view, each of the plurality of fifth wires intersects the third side of the second semiconductor element.

4. The semiconductor device according to any one of claims 1 to 3, further comprising a plurality of sixth wires, each connecting the first semiconductor element to one of the plurality of first terminals.

5. The semiconductor device according to claim 4, further comprising a plurality of seventh wires, each connecting the second semiconductor element to one of the plurality of second terminals.

6. Additional lead terminals, The semiconductor device according to any one of claims 1 to 5, further comprising an additional wire for connecting either the first semiconductor element or the second semiconductor element to the additional lead terminal.

7. It is further equipped with a third lead terminal, The semiconductor device according to any one of claims 1 to 6, wherein, in a plan view, the third lead terminal is located either between the plurality of first terminals or between the plurality of second terminals.

8. The semiconductor device according to any one of claims 1 to 7, wherein the first die pad and the second die pad are arranged on the same plane.

9. The semiconductor device according to any one of claims 1 to 8, further comprising a sealing resin covering the first semiconductor element, the second semiconductor element, and the insulating element.

10. The semiconductor device according to any one of claims 1 to 9, wherein the first semiconductor element, the second semiconductor element, and the insulating element are formed as an SOP package.

11. The semiconductor device according to any one of claims 1 to 10, wherein the first die pad is provided with a plurality of through holes.

12. The semiconductor device according to claim 11, wherein each of the plurality of through holes is an elongated hole extending in a predetermined direction.

13. The semiconductor device according to any one of claims 1 to 12, wherein the composition of each of the first lead and the second lead comprises copper.

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