Semiconductor equipment

Abstract

To provide a semiconductor device with improved characteristics. [Solution] According to the embodiment, the semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The first conductive member includes a first conductive portion and a second conductive portion. The first conductive portion includes a first conductive region. The second conductive portion includes a second conductive region. The first material of the first conductive region is different from the second material of the second conductive region. The semiconductor member is provided between the first electrode and the second electrode. The semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a first conductivity type. The first insulating member is provided between the third electrode and the semiconductor member.

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] For example, in semiconductor devices, improvement in characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to embodiments of the present invention, the semiconductor device includes a first electrode, a second electrode, a third electrode, a first conductive member, a semiconductor member, and a first insulating member. The direction from the first electrode to the second electrode is along the first direction. The first conductive member is electrically connected to the second electrode. The second direction from the third electrode to at least a portion of the first conductive member intersects the first direction. The first conductive member extends along a third direction that intersects a plane including the first and second directions. The first conductive member includes a first conductive portion and a second conductive portion. The direction from the first conductive portion to the second conductive portion is along the third direction. The first conductive portion includes a first conductive region. The second conductive portion includes a second conductive region. The first material of the first conductive region is different from the second material of the second conductive region. The semiconductor member is provided between the first electrode and the second electrode. The semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type. The first semiconductor layer includes a first partial region and a second partial region. The first partial region lies between the first electrode and the third electrode in the first direction. The second partial region lies between the first electrode and the first conductive member in the first direction. The second partial region includes a first semiconductor region and a second semiconductor region. The first semiconductor region is in contact with the first conductive region. The second semiconductor region is in contact with the second conductive region. At least a portion of the second semiconductor layer lies between the third electrode and the first conductive portion in the second direction. The second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction. The second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer. The first insulating member is provided between the third electrode and the semiconductor member. [Brief explanation of the drawing]

[0006] [Figure 1] Figures 1(a) and 1(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 2] Figure 2 is a schematic plan view illustrating a semiconductor device according to the first embodiment. [Figure 3] Figures 3(a) and 3(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 4] Figures 4(a) and 4(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. [Figure 5] Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. [Modes for carrying out the invention]

[0007] Embodiments of the present invention will be described below with reference to the drawings. Drawings are schematic or conceptual, and the relationships between the thickness and width of each part, as well as the ratios of the sizes of different parts, are not necessarily identical to those of reality. Even when representing the same part, the dimensions and ratios may differ between drawings. In this specification and in each figure, elements similar to those described above are denoted by the same reference numerals with respect to previously shown figures, and detailed explanations are omitted as appropriate.

[0008] (First Embodiment) Figures 1(a) and 1(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 2 is a schematic plan view illustrating a semiconductor device according to the first embodiment. Figure 1(a) is a cross-sectional view taken along line A1-A2 in Figure 2. Figure 1(b) is a cross-sectional view taken along line A3-A4 in Figure 2.

[0009] As shown in Figures 1(a), 1(b), and 2, the semiconductor device 110 includes a first electrode 51, a second electrode 52, a third electrode 53, a first conductive member 31, a semiconductor member 10M, and a first insulating member 41. The direction from the first electrode 51 to the second electrode 52 is along the first direction D1.

[0010] The first direction D1 is defined as the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to both the Z-axis and X-axis directions is defined as the Y-axis direction.

[0011] The first conductive member 31 is electrically connected to the second electrode 52. The second direction D2 from the third electrode 53 to at least a portion of the first conductive member 31 intersects with the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0012] As shown in Figure 2, the first conductive member 31 extends along a third direction D3. The third direction D3 intersects a plane containing the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0013] As shown in Figure 2, the first conductive member 31 includes a first conductive portion 31p and a second conductive portion 31q. The direction from the first conductive portion 31p to the second conductive portion 31q is along the third direction D3. The third electrode 53 may extend along the third direction D3.

[0014] Multiple third electrodes 53 may be provided. The direction from one of the multiple third electrodes 53 to another of the multiple third electrodes 53 is along the second direction D2. Multiple first conductive members 31 may be provided. The direction from one of the multiple first conductive members 31 to another of the multiple first conductive members 31 is along the second direction D2. Below, one of the multiple third electrodes 53 and one of the multiple first conductive members 31 will be described.

[0015] As shown in Figure 1(a), the first conductive portion 31p includes the first conductive region 31a. As shown in Figure 1(b), the second conductive portion 31q includes the second conductive region 31b. The first material of the first conductive region 31a is different from the second material of the second conductive region 31b. Examples of these materials will be described later.

[0016] The semiconductor member 10M is provided between the first electrode 51 and the second electrode 52 in the first direction D1. The semiconductor member 10M includes a first semiconductor layer 10 of a first conductivity type and a second semiconductor layer 20 of the first conductivity type. The first conductivity type is, for example, n-type. The first conductivity type may also be p-type. Hereafter, the first conductivity type will be assumed to be n-type.

[0017] The first semiconductor layer 10 includes a first partial region 11 and a second partial region 12. The first partial region 11 is located between the first electrode 51 and the third electrode 53 in the first direction D1. The second partial region 12 is located between the first electrode 51 and the first conductive member 31 in the first direction D1.

[0018] The second partial region 12 includes a first semiconductor region 12a and a second semiconductor region 12b. The first semiconductor region 12a is in contact with the first conductive region 31a. The second semiconductor region 12b is in contact with the second conductive region 31b.

[0019] As shown in FIG. 1(a), at least a part of the second semiconductor layer 20 is located between the third electrode 53 and the first conductive portion 31p in the second direction D2. As shown in FIG. 1(b), the second semiconductor layer 20 is not provided between the third electrode 53 and the second conductive portion 31q in the second direction D2. The concentration of the second impurity of the first conductivity type in the second semiconductor layer 20 is higher than the concentration of the first impurity of the first conductivity type in the first semiconductor layer 10.

[0020] The first insulating member 41 is provided between the third electrode 53 and the semiconductor member 10M. The first insulating member 41 electrically insulates the third electrode 53 from the semiconductor member 10M. A part of the first insulating member 41 may be provided between the third electrode 53 and the second electrode 52. The first insulating member 41 electrically insulates the third electrode 53 from the second electrode 52.

[0021] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0022] The current flowing between the first electrode 51 and the second electrode 52 may flow through the first conductive member 31. For example, the thickness of the barrier between the semiconductor member 10M and the first conductive member 31 can be controlled by the potential of the third electrode 53. The control of the current by the potential of the third electrode 53 may be based on the control of the barrier thickness.

[0023] As described above, a region in which the second semiconductor layer 20 is provided and a region in which the second semiconductor layer 20 is not provided are provided. The current control described above is performed in the region in which the second semiconductor layer 20 is provided. The region in which the second semiconductor layer 20 is provided corresponds to, for example, a switching region. The region in which the second semiconductor layer 20 is not provided corresponds to, for example, a non-switching region.

[0024] As described above, the first semiconductor region 12a and the first conductive region 31a correspond to switching regions. The second semiconductor region 12b and the second conductive region 31b correspond to non-switching regions. In this embodiment, the first material of the first conductive region 31a, which corresponds to the non-switching region, is different from the second material of the second conductive region 31b, which corresponds to the switching region. This results in good properties.

[0025] In this embodiment, the first material corresponding to the switching region is different from the second material corresponding to the non-switching region. For example, a material that provides appropriate characteristics when the switching is ON can be applied to the first material. For example, a material that provides appropriate characteristics when the switching is OFF can be applied to the second material. According to this embodiment, a semiconductor device with improved characteristics can be provided.

[0026] For example, good on-resistance can be obtained. For example, good off-resistance can be obtained. For example, low on-resistance can be obtained. For example, leakage current can be suppressed.

[0027] In one example, the second barrier height of the second material is higher than the first barrier height of the first material. For example, the second work function of the second material is higher than the first work function of the first material. Such a second material can, for example, reduce leakage current.

[0028] In one example, the second conductive region 31b contains a first element, which includes at least one selected from the group consisting of B, In, Ga, and Al. The first conductive region 31a does not contain the first element. Alternatively, the second concentration of the first element in the second conductive region 31b is higher than the first concentration of the first element in the first conductive region 31a. Such a second conductive region 31b (second material) yields a low leakage current. Such a second conductive region 31b (second material) yields, for example, a high barrier height (e.g., a high work function).

[0029] In one example, the second conductive region 31b contains oxygen, while the first conductive region 31a does not. Alternatively, the second oxygen concentration in the second conductive region 31b is higher than the first oxygen concentration in the first conductive region 31a. Such a second conductive region 31b (second material) results in a low leakage current. Such a second conductive region 31b (second material) also results in, for example, a high barrier height (e.g., a high work function).

[0030] In one example, the second conductive region 31b may contain the first substance, which includes, for example, at least one of Al, Ti, Zr, Mg, and Hf, and oxygen. The first conductive region 31a does not contain the first substance, or the second concentration of the first substance in the second conductive region 31b is higher than the first concentration of the first substance in the first conductive region 31a. Such a second conductive region 31b (second material) results in a low leakage current. Such a second conductive region 31b (second material) results in, for example, a high barrier height (e.g., a high work function).

[0031] The second conductive region 31b may include, for example, a multilayer film.

[0032] As shown in Figure 1(a), the first semiconductor region 12a is in contact with the first conductive region 31a. The first conductive region 31a may be a part of the first conductive portion 31p. The first conductive portion 31p may further include the first intermediate region 31A. The first conductive region 31a is located between the semiconductor member 10M and the first intermediate region 31A. The first intermediate region 31A is located between the first conductive region 31a and the second electrode 52. The material of the first intermediate region 31A may be the same as the material of the first conductive region 31a. The first intermediate region 31A may be continuous with the first conductive region 31a. The boundaries between these regions may be unclear.

[0033] As shown in Figure 1(b), the second semiconductor region 12b is in contact with the second conductive region 31b. The second conductive region 31b may be a part of the second conductive portion 31q. The second conductive portion 31q may further include the second intermediate region 31B. The second conductive region 31b is located between the semiconductor member 10M and the second intermediate region 31B. The second intermediate region 31B is located between the second conductive region 31b and the second electrode 52. The second intermediate region material of the second intermediate region 31B may be different from the second material of the second conductive region 31b. The second intermediate region material of the second intermediate region 31B may be substantially the same as the first intermediate region material of the first intermediate region 31A.

[0034] As described above, the first material in the first conductive region 31a is different from the second material in the second conductive region 31b. When comparing these materials, materials at similar locations are compared. For example, in the first conductive region 31a, the material at the first position at the first distance from the semiconductor member 10M is considered the first material. For example, in the second conductive region 31b, the material at the second position at the first distance from the semiconductor member 10M is considered the second material.

[0035] For example, the concentration of the first element may change in a direction intersecting the interface between the semiconductor member 10M and the first conductive member 31. In this case, the difference between the materials can be determined by comparing the concentrations at the same distance (first distance) from the interface between the semiconductor member 10M and the first conductive member 31. For practical purposes, the first distance can be between 5 nm and 10 nm.

[0036] At least one of the first intermediate region 31A and the second intermediate region 31B may contain at least one selected from the group consisting of, for example, Ti, Mo, W, Cr, Co, Ni, Pt, and Ir. For example, the first conductive portion 31p and the second intermediate region 31B satisfy the first, second, or third condition. In the first condition, the first conductive portion 31p contains W, and the second intermediate region 31B contains at least one selected from the group consisting of Pt and Ir. In the second condition, the first conductive portion 31p contains Ni, and the second intermediate region 31B contains at least one selected from the group consisting of Pt and Ir. In the third condition, the first conductive portion 31p contains Pt, and the second intermediate region 31B contains Ir.

[0037] In embodiments, the semiconductor member 10M may include silicon. The semiconductor member 10M may include a compound semiconductor. The compound semiconductor may include at least one selected from the group consisting of SiC, GaN, GaO, and GaAs.

[0038] In this embodiment, the first conductive region 31a may form a Schottky junction with the first semiconductor region 12a. The second conductive region 31b may form a Schottky junction with the second semiconductor region 12b.

[0039] As shown in Figure 2, the semiconductor member 10M includes a cell region 18A, a termination region 18B, and an outer edge 18R. The termination region 18B is located between the cell region 18A and the outer edge 18R in a direction intersecting the first direction D1. The first semiconductor region 12a is included in the cell region 18A. The second semiconductor region 12b is included in the termination region 18B. The cell region 18A corresponds to the switching region. The termination region 18B corresponds to the non-switching region.

[0040] As shown in Figures 1(a) and 1(b), the semiconductor device 110 may further include a first conductive portion 61. The first conductive portion 61 is electrically connected to the second electrode 52. For example, at a cross-sectional position different from those shown in these figures, the first conductive portion 61 may be electrically connected to the second electrode 52 by wiring 61L or the like.

[0041] The position of at least a portion of the first conductive portion 61 in the first direction D1 (first conductive portion position) is between the position of the first electrode 51 in the first direction D1 (first electrode position) and the position of the third electrode 53 in the first direction D1 (third electrode position). A portion of the first insulating member 41 is located between the first conductive portion 61 and the semiconductor member 10M, and between the first conductive portion 61 and the third electrode 53.

[0042] In this example, the first conductive portion 61 is located between the first partial region 11 and the third electrode 53 in the first direction D1. The length (width) of the third electrode 53 in the second direction D2 may be longer than the length (width) of the first conductive portion 61 in the second direction D2.

[0043] The second conductive region 31b may be formed, for example, by selectively introducing an element that will become the first element (or first substance) into a trench formed in the semiconductor member 10M, and then filling the remaining space of the trench with a metal or the like. The introduction of the element may include, for example, film deposition. The introduction of the element may include, for example, ion implantation.

[0044] Figures 3(a) and 3(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 3(a) is an enlarged view of a portion of Figure 1(a). Figure 3(b) is an enlarged view of a portion of Figure 1(b).

[0045] As shown in Figure 3(b), the second conductive region 31b may include the first portion p1. The first portion p1 is located between the second semiconductor region 12b and the second intermediate region 31B in the first direction D1. The first thickness t1 of the first portion p1 may be, for example, 1 nm or more and 50 nm or less. If the first thickness t1 is 1 nm or more, for example, leakage current can be stably reduced. If the first thickness t1 is 50 nm or less, for example, degradation of characteristics can be suppressed.

[0046] As shown in Figures 3(a) and 3(b), the first semiconductor layer 10 may further include a third partial region 13. The third partial region 13 includes a first side region 13a (Figure 3(a)) and a second side region 13b (Figure 3(b)). As shown in Figure 3(a), at least a portion of the first side region 13a lies between at least a portion of the third electrode 53 and the first conductive portion 31p in the second direction D2. As shown in Figure 3(b), at least a portion of the second side region 13b lies between at least a portion of the third electrode 53 and the second conductive portion 31q in the second direction D2.

[0047] The thickness of the first side region 13a in the second direction D2 (first side region thickness ts1) may be, for example, 10 nm or more and 200 nm or less. The first side region thickness ts1 may also be 10 nm or more and 80 nm or less. If the first side region thickness ts1 is 10 nm or more, for example, stable characteristics are easier to obtain. If the first side region thickness ts1 is 80 nm or less, for example, an appropriate threshold voltage is easier to obtain.

[0048] As described above, at least a portion of the second side region 13b lies between at least a portion of the third electrode 53 and the second conductive portion 31q in the second direction D2. The second conductive region 31b of the second conductive portion 31q further includes a second portion p2. The second portion p2 lies between the second side region 13b and the second intermediate region 31B in the second direction D2.

[0049] The second thickness t2 in the second direction D2 of the second portion p2 can be, for example, 1 nm or more and 50 nm or less. A second thickness t2 of 1 nm or more allows for stable reduction of leakage current, for example. A second thickness t2 of 50 nm or less makes it easier to obtain a second portion p2 with uniform characteristics, for example.

[0050] As shown in Figure 2, the length of the first conductive portion 31p in the third direction D3 is defined as the first length L1. The length of the second conductive portion 31q in the third direction D3 is defined as the second length L2. In this embodiment, the first length L1 is longer than the second length L2. For example, a wide cell region 18A can be obtained. Efficient switching characteristics can be obtained.

[0051] As shown in Figures 1(a), 1(b), and 2, the semiconductor device 110 may further include a fourth electrode 54. The fourth electrode 54 may be electrically connected to the third electrode 53. The direction from a portion of the termination region 18B to the fourth electrode 54 is along the first direction D1. The direction from the fourth electrode 54 to the third electrode 53 is along the second direction D2.

[0052] Figures 4(a) and 4(b) are schematic cross-sectional views illustrating a semiconductor device according to the first embodiment. Figure 5 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. Figure 4(a) is a cross-sectional view corresponding to line A1-A2 in Figure 5. Figure 4(b) is a cross-sectional view corresponding to line A3-A4 in Figure 5. As shown in Figures 4(a), 4(b), and 5, the semiconductor device 111 according to this embodiment further includes a third other electrode 53A. The configuration of the semiconductor device 111, excluding this electrode, may be the same as that of the semiconductor device 110.

[0053] The third other electrode 53A extends along the third electrode 53. The third other electrode 53A is electrically connected to the third electrode 53. In the second direction D2, the third electrode 53 is located between the third other electrode 53A and the first conductive member 31. A portion of the first insulating member 41 is located between the third other electrode 53A and the third electrode 53.

[0054] In such a semiconductor device 111, the first material in the first conductive region 31a is different from the second material in the second conductive region 31b. This makes it possible to provide a semiconductor device with improved characteristics. For example, leakage current can be reduced.

[0055] In the embodiment, at least one of the first electrode 51 and the second electrode 52 may contain a metal. The metal may include, for example, at least one selected from the group consisting of Al, Ti, Ni, Au, Ag, and Cu. At least one of the third electrode 53 and the fourth electrode 54 may contain polysilicon.

[0056] In the embodiment, information regarding the shape of semiconductor components, electrodes, and conductive components can be obtained, for example, by electron microscope images. Information regarding composition and elemental concentrations can be obtained, for example, by EDX (Energy Dispersive X-ray Spectroscopy) or SIMS (Secondary Ion Mass Spectrometry).

[0057] The embodiments may include the following technical proposals. (Technical proposal 1) First electrode and, The second electrode is such that the direction from the first electrode to the second electrode is along the first direction, The third electrode and A first conductive member electrically connected to the second electrode, wherein a second direction from the third electrode to at least a portion of the first conductive member intersects the first direction, the first conductive member extends along a third direction intersecting a plane including the first and second directions, the first conductive member includes a first conductive portion and a second conductive portion, the direction from the first conductive portion to the second conductive portion is along the third direction, the first conductive portion includes a first conductive region, the second conductive portion includes a second conductive region, and the first material of the first conductive region is different from the second material of the second conductive region, the first conductive member and A semiconductor member provided between the first electrode and the second electrode, wherein the semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type, the first semiconductor layer includes a first partial region and a second partial region, the first partial region is located between the first electrode and the third electrode in the first direction, the second partial region is located between the first electrode and the first conductive member in the first direction, the second partial region includes a first semiconductor region and a second semiconductor region, the first semiconductor region is in contact with the first conductive region, the second semiconductor region is in contact with the second conductive region, at least a part of the second semiconductor layer is located between the third electrode and the first conductive portion in the second direction, the second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction, and the second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer, and the semiconductor member, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with [the necessary components].

[0058] (Technical proposal 2) The semiconductor member includes a cell region, a terminal region, and an outer edge. The terminal region is located between the cell region and the outer edge in a direction intersecting the first direction. The first semiconductor region is included in the cell region, The semiconductor device according to Technical Proposal 1, wherein the second semiconductor region is included in the termination region.

[0059] (Technical proposal 3) The second conductive region comprises a first element including at least one selected from the group consisting of B, In, Ga, and Al. The semiconductor device according to Technical Proposal 1 or 2, wherein the first conductive region does not contain the first element, or the second concentration of the first element in the second conductive region is higher than the first concentration of the first element in the first conductive region.

[0060] (Technical proposal 4) The second conductive region contains oxygen, The semiconductor device according to Technical Proposal 1 or 2, wherein the first conductive region does not contain oxygen, or the second oxygen concentration in the second conductive region is higher than the first oxygen concentration in the first conductive region.

[0061] (Technical proposal 5) The semiconductor device according to Technical Proposal 1 or 2, wherein the second barrier height of the second material is higher than the first barrier height of the first material.

[0062] (Technical proposal 6) The semiconductor device according to any one of Technical Proposals 1 to 5, wherein the first conductive region forms a Schottky junction with the first semiconductor region.

[0063] (Technical proposal 7) The semiconductor material is a semiconductor device according to any one of Technical Proposals 1 to 6, comprising silicon.

[0064] (Technical proposal 8) The second conductive portion further includes a second intermediate region, The second conductive region is located between the semiconductor member and the second intermediate region. The semiconductor device described in any one of Technical Proposals 1 to 7, wherein the second intermediate region material of the second intermediate region is different from the second material.

[0065] (Technical proposal 9) The first conductive portion and the second intermediate region satisfy the first condition, the second condition, or the third condition. In the first condition, the first conductive portion includes W, and the second intermediate region includes at least one selected from the group consisting of Pt and Ir. In the second condition, the first conductive portion includes Ni, and the second intermediate region includes at least one selected from the group consisting of Pt and Ir. The semiconductor device according to Technical Proposal 8, wherein, in the third condition, the first conductive portion includes Pt and the second intermediate region includes Ir.

[0066] (Technical proposal 10) The second conductive region includes the first portion, The first portion is located between the second semiconductor region and the second intermediate region in the first direction. The semiconductor device according to Technical Proposal 8 or 9, wherein the first thickness of the first portion is 1 nm or more and 50 nm or less.

[0067] (Technical proposal 11) The first semiconductor layer further includes a third subregion, The third subregion includes the second side region, At least a portion of the second side region is located between at least a portion of the third electrode and the second conductive portion in the second direction. The second conductive region includes the second portion, The second portion is a semiconductor device according to any one of the technical proposals 8 to 10, located between the second side region and the second intermediate region in the second direction.

[0068] (Technical proposal 12) The semiconductor device according to Technical Proposal 11, wherein the second thickness of the second portion in the second direction is 1 nm or more and 50 nm or less.

[0069] (Technical proposal 13) The first semiconductor layer further includes a third subregion, The third subregion includes a first side region and a second side region, At least a portion of the first side region is located between at least a portion of the third electrode and the first conductive portion in the second direction. A semiconductor device according to any one of the technical proposals 1 to 7, wherein at least a portion of the second side region is located between at least a portion of the third electrode and the second conductive portion in the second direction.

[0070] (Technical proposal 14) The semiconductor device according to Technical Proposal 13, wherein the thickness of the first side region in the second direction of the first side region is 10 nm or more and 200 nm or less.

[0071] (Technical proposal 15) A semiconductor device according to any one of Technical Proposals 1 to 14, wherein the first length of the first conductive portion in the third direction is longer than the second length of the second conductive portion in the third direction.

[0072] (Technical proposal 16) The third electrode extends along the third direction, as described in any one of the technical proposals 1 to 15.

[0073] (Technical proposal 17) The first conductive part is further electrically connected to the second electrode, The position of the first conductive portion in the first direction of at least a portion of the first conductive portion is between the first electrode position of the first electrode in the first direction and the third electrode position of the third electrode in the first direction. A semiconductor device according to any one of Technical Proposals 1 to 16, wherein a part of the first insulating member is located between the first conductive portion and the semiconductor member, and between the first conductive portion and the third electrode.

[0074] (Technical proposal 18) The semiconductor device according to Technical Proposal 17, wherein the first conductive portion is located between the first partial region and the third electrode in the first direction.

[0075] (Technical proposal 19) The present invention further comprises a third other electrode extending along the third electrode, In the second direction, the third electrode consists of the third other electrode and the first conductive member. A part of the first insulating member is located between the third other electrode and the third electrode, as described in Technical Proposal 17, for the semiconductor device.

[0076] (Technical proposal 20) The present invention further comprises a fourth electrode electrically connected to the third electrode, The direction from a portion of the terminal region to the fourth electrode is along the first direction, The semiconductor device according to Technical Proposal 2, wherein the direction from the fourth electrode to the third electrode is along the second direction.

[0077] According to the embodiment, a semiconductor device capable of improving characteristics is provided.

[0078] Embodiments of the present invention have been described above with reference to examples. However, the present invention is not limited to these examples. For example, the specific configuration of each element included in a semiconductor device, such as electrodes, conductive members, semiconductor members, semiconductor regions, conductive parts, and insulating members, is included within the scope of the present invention as long as those skilled in the art can appropriately select from the known range to implement the present invention and obtain similar effects.

[0079] Combinations of two or more elements from each example, to the extent technically feasible, are also included within the scope of the present invention, insofar as they encompass the gist of the invention.

[0080] All semiconductor devices that a person skilled in the art can implement by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention, insofar as they encompass the gist of the present invention.

[0081] Within the scope of the concept of this invention, a person skilled in the art would be able to conceive of various modifications and alterations, and it is understood that such modifications and alterations also fall within the scope of this invention.

[0082] While several embodiments of the present invention have been described, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be carried out in a variety of other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their variations are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. [Explanation of symbols]

[0083] 10, 20: First and second semiconductor layers, 10M: Semiconductor material, 11-13: First and third partial regions, 12a, 12b: First and second semiconductor regions, 13a, 13b: First and second side regions, 18A: Cell region, 18B: Termination region, 18R: Outer edge, 31: First conductive material, 31A, 31B: First and second intermediate regions, 31a, 31b: First and second conductive regions, 31p, 31p: First and second conductive portions, 41: First insulating material, 51-54: First to fourth electrodes, 53A: Third other electrode, 61: First conductive part, 61L: Wiring, 110, 111: Semiconductor device, D1-D3: First to third directions, L1, L2: First and second lengths, p1, p2: first and second parts, t1, t2: first and second thicknesses, ts1: first side region thickness

Claims

1. First electrode and The second electrode is such that the direction from the first electrode to the second electrode is along the first direction, The third electrode and A first conductive member electrically connected to the second electrode, wherein a second direction from the third electrode to at least a portion of the first conductive member intersects the first direction, the first conductive member extends along a third direction intersecting a plane including the first and second directions, the first conductive member includes a first conductive portion and a second conductive portion, the direction from the first conductive portion to the second conductive portion is along the third direction, the first conductive portion includes a first conductive region, the second conductive portion includes a second conductive region, and the first material of the first conductive region is different from the second material of the second conductive region, the first conductive member and A semiconductor member provided between the first electrode and the second electrode, wherein the semiconductor member includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of the first conductivity type, the first semiconductor layer includes a first partial region and a second partial region, the first partial region is located between the first electrode and the third electrode in the first direction, the second partial region is located between the first electrode and the first conductive member in the first direction, the second partial region includes a first semiconductor region and a second semiconductor region, the first semiconductor region is in contact with the first conductive region, the second semiconductor region is in contact with the second conductive region, at least a part of the second semiconductor layer is located between the third electrode and the first conductive portion in the second direction, the second semiconductor layer is not provided between the third electrode and the second conductive portion in the second direction, and the second impurity concentration of the first conductivity type in the second semiconductor layer is higher than the first impurity concentration of the first conductivity type in the first semiconductor layer, A first insulating member is provided between the third electrode and the semiconductor member, A semiconductor device equipped with [the necessary components].

2. The semiconductor member includes a cell region, a terminal region, and an outer edge. The terminal region is located between the cell region and the outer edge in a direction intersecting the first direction. The first semiconductor region is included in the cell region, The semiconductor device according to claim 1, wherein the second semiconductor region is included in the termination region.

3. The second conductive region comprises a first element including at least one selected from the group consisting of B, In, Ga, and Al. The semiconductor device according to claim 1 or 2, wherein the first conductive region does not contain the first element, or the second concentration of the first element in the second conductive region is higher than the first concentration of the first element in the first conductive region.

4. The second conductive region contains oxygen, The semiconductor device according to claim 1 or 2, wherein the first conductive region does not contain oxygen, or the second oxygen concentration in the second conductive region is higher than the first oxygen concentration in the first conductive region.

5. The semiconductor device according to claim 1 or 2, wherein the second barrier height of the second material is higher than the first barrier height of the first material.

6. The semiconductor device according to claim 1 or 2, wherein the first conductive region forms a Schottky junction with the first semiconductor region.

7. The semiconductor device according to claim 1 or 2, wherein the semiconductor member includes silicon.

8. The second conductive portion further includes a second intermediate region, The second conductive region is located between the semiconductor member and the second intermediate region. The semiconductor device according to claim 1 or 2, wherein the second intermediate region material of the second intermediate region is different from the second material.

9. The first conductive portion and the second intermediate region satisfy the first condition, the second condition, or the third condition. In the first condition, the first conductive portion includes W, and the second intermediate region includes at least one selected from the group consisting of Pt and Ir. In the second condition, the first conductive portion includes Ni, and the second intermediate region includes at least one selected from the group consisting of Pt and Ir. The semiconductor device according to claim 8, wherein, in the third condition, the first conductive portion includes Pt and the second intermediate region includes Ir.

10. The second conductive region includes the first portion, The first portion is located between the second semiconductor region and the second intermediate region in the first direction. The semiconductor device according to claim 8, wherein the first thickness of the first portion is 1 nm or more and 50 nm or less.

11. The first semiconductor layer further includes a third subregion, The third subregion includes the second side region, At least a portion of the second side region is located between at least a portion of the third electrode and the second conductive portion in the second direction. The aforementioned second conductive region includes a second portion, The semiconductor device according to claim 8, wherein the second portion is located between the second side region and the second intermediate region in the second direction.

12. The semiconductor device according to claim 11, wherein the second thickness of the second portion in the second direction is 1 nm or more and 50 nm or less.

13. The first semiconductor layer further includes a third subregion, The third subregion includes the first side region and the second side region, At least a portion of the first side region is located between at least a portion of the third electrode and the first conductive portion in the second direction. The semiconductor device according to claim 1 or 2, wherein at least a portion of the second side region is located between at least a portion of the third electrode and the second conductive portion in the second direction.

14. The semiconductor device according to claim 13, wherein the thickness of the first side region in the second direction of the first side region is 10 nm or more and 200 nm or less.

15. The semiconductor device according to claim 1 or 2, wherein the first length of the first conductive portion in the third direction is longer than the second length of the second conductive portion in the third direction.

16. The semiconductor device according to claim 1 or 2, wherein the third electrode extends along the third direction.

17. The first conductive part is further electrically connected to the second electrode, The position of the first conductive portion in the first direction of at least a portion of the first conductive portion is between the first electrode position of the first electrode in the first direction and the third electrode position of the third electrode in the first direction. The semiconductor device according to claim 1 or 2, wherein a part of the first insulating member is located between the first conductive portion and the semiconductor member, and between the first conductive portion and the third electrode.

18. The semiconductor device according to claim 17, wherein the first conductive portion is located between the first partial region and the third electrode in the first direction.

19. The present invention further comprises a third other electrode extending along the third electrode, In the second direction, the third electrode consists of the third other electrode and the first conductive member. The semiconductor device according to claim 17, wherein a part of the first insulating member is located between the third other electrode and the third electrode.

20. The third electrode is further electrically connected to a fourth electrode, The direction from a part of the terminal region to the fourth electrode is along the first direction, The semiconductor device according to claim 2, wherein the direction from the fourth electrode to the third electrode is along the second direction.

Images