Wiring structure, method for manufacturing test specimens, and method for testing wiring structure

The wiring structure with diagonal slits and insulating film addresses electromigration by generating a counter flow and density gradient, enhancing resistance to electromigration damage without complex manufacturing, thus improving reliability and reducing costs.

JP2026079019APending Publication Date: 2026-05-15HIROSAKI UNIVERSITY
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Patent Information

Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
HIROSAKI UNIVERSITY
Filing Date
2024-10-29
Publication Date
2026-05-15

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Abstract

This invention provides a wiring structure that enhances resistance to electromigration damage without using a three-dimensional wiring structure such as a reservoir structure, while avoiding numerous manufacturing processes and the associated cost increases. [Solution] The wiring structure 10 includes a two-dimensional structure that simultaneously generates a metal atomic flow Ra moving in a direction Ca that can collide with the metal atomic flow Fa being transported in the direction of the electron flow Fe within the wiring 14 by electromigration. This structure has its end facing the inner wall of the wiring 14 and its tip facing the center of the wiring 14 and has an oblique slit shape directed toward the electrode direction. This makes it possible to generate an atomic flow Ra in the opposite direction to the electron flow Fe or metal atomic flow Fa within the wiring 14 within the same cross-section of the wiring 14. As a result, atoms with different directions can collide with each other, and the drift velocity of the metal atomic flow Fa can be reduced.
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